ASML Netherlands B.V.

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G03F 7/20 - Exposure; Apparatus therefor 2,010
G03B 27/42 - Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original 410
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically 393
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor 383
G03B 27/52 - Projection printing apparatus, e.g. enlarger, copying camera - Details 358
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1.

CONNECTION ASSEMBLY

      
Application Number 18550841
Status Pending
Filing Date 2022-02-21
First Publication Date 2024-06-13
Owner ASML Netherlands B.V. (Netherlands)
Inventor Vanderhallen, Ivo

Abstract

There is described a connection assembly (24) for a high-pressure liquid metal supply system used in an EUV light source comprising a monolithic block, wherein the monolithic block includes: at least one connection (21) for connecting to a reservoir (18,19) configured to hold liquid metal: interior passages (25) configured to fluidly connect the at least one connection with at least two liquid metal outlets/inlets (22, 23): at least two freeze valves (15,16,17) configured to block a passage by solidifying liquid metal therein. Also described is a liquid metal storage assembly including such a connection assembly, a lithography apparatus including such a liquid metal storage assembly or such a connection assembly, as well as the use of such assemblies or apparatus in a lithographic apparatus or method.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

2.

FLUID HANDLING SYSTEM AND LITHOGRAPHIC APPARATUS

      
Application Number 17641206
Status Pending
Filing Date 2020-08-26
First Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Polet, Theodorus Wilhelmus
  • Steffens, Koen
  • Van Der Ham, Ronald
  • Pieterse, Gerben
  • Eummelen, Erik Henricus Egidius Catharina
  • Fahrni, Francis

Abstract

A fluid handling system for wetting a substrate irradiated by radiation. The fluid handling system include a first device to confine a first liquid to a first space between the first device and the substrate. The first device includes a first liquid supply member to provide the first liquid to the first space and an extraction member to remove liquid. The fluid handling system further includes a second device including a second liquid supply member to provide a second liquid to a second space between the second device and the substrate, wherein there is a gap on the surface of the substrate between the first and second liquids. The fluid handling system is configured to provide the second liquid to the second space without removing any liquid from the second space to form a liquid layer, and is configured to provide the first and second liquids on the substrate simultaneously.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/20 - Exposure; Apparatus therefor

3.

AN INSPECTION TOOL, METHOD AND LITHOGRAPHIC APPARATUS

      
Application Number 18571913
Status Pending
Filing Date 2022-05-23
First Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Bhardwaj, Shikhar

Abstract

A tool for assessing a hole property of one or more holes in a component of a lithographic apparatus, the tool including: an assessment substrate; a fluid supply configured to supply a jet of fluid from each of the one or more holes to a first surface of the assessment substrate, wherein the fluid is supplied at a fluid temperature such that the one or more jets of fluid cause local temperature variations in at least part of the assessment substrate; and an infrared sensor configured to sense a temperature distribution of the assessment substrate in dependence on the local temperature variations.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

4.

METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES

      
Application Number 18437564
Status Pending
Filing Date 2024-02-09
First Publication Date 2024-06-13
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ten Haaf, Gijs
  • Mos, Everhardus Cornelis
  • Kattouw, Hans Erik
  • Brinkhof, Ralph

Abstract

Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

5.

CAUSAL CONVOLUTION NETWORK FOR PROCESS CONTROL

      
Application Number 18287613
Status Pending
Filing Date 2022-04-19
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Werkman, Roy
  • Roy, Sarathi
  • Manneke, Daan

Abstract

A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a plurality of first values of a first parameter based on successive measurements associated with a first operation of a process step in the semiconductor manufacturing process; using a causal convolutional neural network to determine a predicted value of a second parameter based on the first values; and using the predicted value of the second parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

IPC Classes  ?

  • G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

6.

SYSTEM AND METHOD FOR DETERMINING LOCAL FOCUS POINTS DURING INSPECTION IN A CHARGED PARTICLE SYSTEM

      
Application Number 18284824
Status Pending
Filing Date 2022-03-04
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wang, Te-Sheng
  • Wang, Szu-Po
  • Liu, Tsung-Hsien
  • Hsieh, Yung-Huan

Abstract

Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.

IPC Classes  ?

  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]

7.

METHOD AND APPARATUS FOR INSPECTION

      
Application Number 18411525
Status Pending
Filing Date 2024-01-12
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kastrup, Bernardo
  • Mulkens, Johannes Catharinus Hubertus
  • Van Den Brink, Marinus Aart
  • Benschop, Jozef Petrus Henricus
  • Smakman, Erwin Paul
  • Druzhinina, Tamara
  • Verschuren, Coen Adrianus

Abstract

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

IPC Classes  ?

  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details
  • H01J 37/15 - External mechanical adjustment of electron- or ion-optical components
  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

8.

MEASURING APPARATUS AND METHOD FOR ROUGHNESS AND/OR DEFECT MEASUREMENT ON A SURFACE

      
Application Number 18279030
Status Pending
Filing Date 2022-03-03
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Von Finck, Alexander
  • Halm, Simon
  • Markel, Ingo Juergen
  • Neumann-Röbisch, Maciej

Abstract

A measuring apparatus has at least two radiation sources arranged to illuminate a measuring region of a surface of a sample, the at least two sources configured to illuminate the measuring region along at least two illumination beam paths at different angles of incidence relative to a surface normal of the surface, a detector device configured to detect at least two scattered radiation images of surface sections in the illuminated measuring region at a predetermined viewing angle relative to the surface normal of the surface, portions of the scattered radiation received by the detector device, which portions are formed in each case by the illumination in one of the illumination beam paths, in each case having a common spatial frequency, and an evaluation device configured to determine at least one roughness feature of the surface sections from the at least two scattered radiation images.

IPC Classes  ?

  • G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
  • G01N 21/47 - Scattering, i.e. diffuse reflection
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/94 - Investigating contamination, e.g. dust

9.

METHOD OF PATTERN SELECTION FOR A SEMICONDUCTOR MANUFACTURING RELATED PROCESS

      
Application Number 18278881
Status Pending
Filing Date 2022-02-28
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Hamouda, Ayman

Abstract

A method and apparatus for selecting patterns for training or calibrating models related to semiconductor manufacturing. The method includes obtaining a first set of patterns; representing each pattern of the first set of patterns in a representation domain, the representation domain corresponding to electromagnetic functions; and selecting a second set of patterns from the first set of patterns based on the representation domain.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06F 30/39 - Circuit design at the physical level
  • G06N 3/0464 - Convolutional networks [CNN, ConvNet]
  • G06N 20/00 - Machine learning

10.

Metrology Apparatus

      
Application Number 18441772
Status Pending
Filing Date 2024-02-14
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Pandey, Nitesh
  • Den Boef, Arie Jeffrey
  • Akbulut, Duygu
  • Van Dam, Marinus Johannes Maria
  • Butler, Hans
  • Cramer, Hugo Augustinus Joseph
  • Van Der Pasch, Engelbertus Antonius Fransiscus
  • Zijp, Ferry
  • Raaymakers, Jeroen Arnoldus Leonardus Johannes
  • Reijnders, Marinus Petrus

Abstract

A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G01N 21/956 - Inspecting patterns on the surface of objects

11.

METROLOGY TOOL CALIBRATION METHOD AND ASSOCIATED METROLOGY TOOL

      
Application Number 18286327
Status Pending
Filing Date 2022-03-23
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Lian, Jin
  • Koolen, Armand Eugene Albert
  • Goorden, Sebastianus Adrianus
  • Lim, Hui Quan

Abstract

Disclosed is a method of determining a correction for a measurement of a target and an associated apparatus. The measurement is subject to a target-dependent correction parameter which has a dependence the target and/or a stack on which the target is comprised. The method comprises obtaining first measurement data relating to a measurement of a fiducial target, said first measurement data comprising at least a first and second set of intensity parameter values: and second measurement data relating to a measurement of the fiducial target, the second measurement data comprising a third set of intensity parameter values. A target-invariant correction parameter is determined from said first measurement data and second measurement data. the target-invariant correction parameter being a component of the target-dependent correction parameter which is not dependent on the target and/or a stack: and the correction is determined from said target-in-variant correction parameter.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

12.

SYSTEM AND METHOD TO ENSURE PARAMETER MEASUREMENT MATCHING ACROSS METROLOGY TOOLS

      
Application Number 18284974
Status Pending
Filing Date 2022-04-25
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Bottegal, Giulio
  • Cao, Xingang

Abstract

Methods and systems for determining a model configured to predict values of physical characteristics (e.g., overlay, CD) associated with a patterned substrate measured using different measurement tools. The method involves obtaining a first set of measured data for a first one or more patterned substrates using a first one or more measurement tools, and reference measurements of a physical characteristic. Also, a second set of measured data and virtual data for a second one or more patterned substrates measured using a second one or more measurement tools is obtained. A set of mapping functions between the second set and the virtual data are generated. The set of mapping functions is used to convert the first set. Then, a model is determined based on the reference measurements and the converted data such that the model predicts values of the physical characteristic that are within an acceptable threshold of the reference measurements.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

13.

ALIGNMENT METHOD AND ASSOCIATED ALIGNMENT AND LITHOGRAPHIC APPARATUSES

      
Application Number 18279121
Status Pending
Filing Date 2022-02-18
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Rehman, Samee Ur
  • Menchtchikov, Boris
  • Socha, Robert John

Abstract

A method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method includes obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of the alignment data, the one or more dominant orthogonal components including a number of orthogonal components which together sufficiently describes variance in the alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of the one or more dominant orthogonal components. Alternatively, the method includes, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if the sensitivity metric is above a sensitivity threshold.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

14.

ON SYSTEM SELF-DIAGNOSIS AND SELF-CALIBRATION TECHNIQUE FOR CHARGED PARTICLE BEAM SYSTEMS

      
Application Number 18284839
Status Pending
Filing Date 2022-03-03
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wang, Yongxin
  • La Fontaine, Bruno

Abstract

An improved method of performing a self-diagnosis of a charged particle inspection system is disclosed. An improved method comprises triggering a self-diagnosis based on output data of the charged particle inspection system; in response to the triggering of the self-diagnosis, receiving diagnostic data of a sub-system of the charged particle inspection system; identifying an issue associated with the output data based on the diagnostic data of the sub-system; and generating a control signal to adjust an operation parameter of the sub-system according to the identified issue.

IPC Classes  ?

  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
  • H01J 37/244 - Detectors; Associated components or circuits therefor

15.

SURFACE TREATMENT DEVICE AND METHOD

      
Application Number 18286485
Status Pending
Filing Date 2022-04-04
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Azimi, Monim
  • Lindeijer, Tjarco
  • Dijkstra, Michel
  • Tromp, Siegfried Alexander
  • Sridhar, Ashwin

Abstract

A surface treatment device for treating a surface of a substrate support, wherein the surface treatment device comprises a contacting surface that is configured to contact the surface of the substrate support. The contacting surface is configured with at least a first contour with a first centre of curvature and a second contour with a second centre of curvature, wherein the first centre of curvature and the second centre of curvature are non-coincident points.

IPC Classes  ?

  • H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

16.

METROLOGY METHOD AND APPARATUS

      
Application Number 18443827
Status Pending
Filing Date 2024-02-16
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • De Haan, Guido
  • Edward, Stephen
  • Van Den Hooven, Thomas Jan
  • Planken, Paulus Clemens Maria
  • Setija, Irwan Dani

Abstract

Disclosed is a method for measuring a target located on a substrate beneath at least one layer. The method comprises exciting said at least one layer with pump radiation comprising at least one pump wavelength, so as to generate an acoustic wave within said at least one layer which reflects of said target thereby generating an acoustic replica of said target at a surface of said substrate and illuminating said acoustic replica with probe radiation comprising at least one probe wavelength and capturing the resultant scattered probe radiation, scattered from the acoustic replica. One or both of said exciting step and said illuminating step comprises generating Surface Plasmon Polaritons (SPPs) on residual topography of said at least one layer resultant from said target.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

17.

A POSITIONING SYSTEM, A LITHOGRAPHIC APPARATUS, A DRIVING FORCE ATTENUATION METHOD, AND A DEVICE MANUFACTURING METHOD

      
Application Number 18284580
Status Pending
Filing Date 2022-04-11
First Publication Date 2024-05-30
Owner
  • ASML Netherlands B.V. (Netherlands)
  • Carl Zeiss SMT GmbH (Germany)
Inventor
  • Kimman, Maarten Hartger
  • Butler, Hans
  • Vermeulen, Johannes,petrus,martinus,bernardus
  • Troger, Stefan
  • Erath, Michael
  • Gaida, Philipp

Abstract

A positioning system for moving or positioning a moveable object, the system including: a dynamic support system including a reaction mass, a first support, a first spring system to support the reaction mass from the first support, a second support, a second spring system to support the first support from the second support, and a damping system to provide damping to the dynamic support system; and an actuator for generating a driving force between the moveable object and the reaction mass for moving or position the object, wherein a first eigenfrequency and a second eigenfrequency of the dynamic support system are substantially the same.

IPC Classes  ?

  • F16F 15/08 - Suppression of vibrations of non-rotating, e.g. reciprocating, systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating system using elastic means with rubber springs
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

18.

CLAMP ELECTRODE MODIFICATION FOR IMPROVED OVERLAY

      
Application Number 18281921
Status Pending
Filing Date 2022-03-17
First Publication Date 2024-05-30
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Levy, Keane Michael
  • Lyrintzis, Sotrios
  • Aftab, Maham
  • Sheikholeslam-Nouri, Seyed Mehdi
  • Uitterdijk, Tammo

Abstract

Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming a dielectric layer that includes a plurality of burls for supporting an object. The example method can further include forming an electrostatic layer that includes one or more electrodes. The example method can further include generating, using the electrostatic layer, an electrostatic force to electrostatically clamp the object to the plurality of burls in response to an application of one or more voltages to the one or more electrodes. In some aspects, a first magnitude of the electrostatic force in a first region of the dielectric layer can be different than a second magnitude of the electrostatic force in a second region of the dielectric layer. For example, the first magnitude and the second magnitude can be part of a linear, non-linear, or stepped (e.g., multi-level) electrostatic force gradient.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

19.

TEMPERATURE CONDITIONING SYSTEM, A LITHOGRAPHIC APPARATUS AND A METHOD OF TEMPERATURE CONDITIONING AN OBJECT

      
Application Number 18284608
Status Pending
Filing Date 2022-03-22
First Publication Date 2024-05-30
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van De Meerendonk, Remco
  • Direcks, Daniel Jozef, Maria
  • Nakíboglu, Günes
  • Waterson, Nicholas Peter
  • Klugkist, Joost André
  • Pekelder, Sven
  • Van Der Net, Antonius Johannus
  • Jacobs, Johannes Henricus Wilhelmus
  • Oudes, Jaap
  • Janssen, Gerardus Arnoldus Hendricus, Franciscus
  • Van Lipzig, Jeroen, Peterus Johannes
  • Van Santvoort, Johannes, Franciscus Martinus

Abstract

A temperature conditioning system using conditioning liquid to condition a temperature of an object, the system including a conditioning conduit, a return conduit, a supply chamber, and a discharge chamber, wherein the temperature conditioning system is arranged to provide a static pressure difference between the supply chamber outlet and the discharge chamber inlet to create a flow through the conditioning conduit. A lithography apparatus and a method of temperature conditioning an object is also described.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

20.

ASSEMBLY FOR SEPARATING RADIATION IN THE FAR FIELD

      
Application Number 18277188
Status Pending
Filing Date 2022-01-12
First Publication Date 2024-05-23
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Smorenburg, Petrus Wilhelmus
  • Reinink, Johan
  • Reijnders, Marinus Petrus
  • Nienhuys, Han-Kwang
  • O'Dwyer, David
  • Roobol, Sander Bas
  • Porter, Christina Lynn
  • Edward, Stephen

Abstract

An assembly and method for separating first radiation and second radiation in the far field, wherein the first radiation and the second radiation have non-overlapping wavelengths, The assembly comprises a capillary structure, wherein the first radiation and the second radiation propagate coaxially along at least a portion of the capillary structure, and an optical structure configured to control the spatial distribution of the first radiation outside of the capillary structure, through interference, such that the intensity of the first radiation in the far field is reduced along an optical axis of the second radiation.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G21K 1/10 - Scattering devices; Absorbing devices

21.

METHOD FOR INFERRING A LOCAL UNIFORMITY METRIC

      
Application Number 18533109
Status Pending
Filing Date 2023-12-07
First Publication Date 2024-05-23
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Mathijssen, Simon Gijsbert Josephus
  • Bhattacharyya, Kaustuve

Abstract

A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

22.

ASYMMETRY EXTENDED GRID MODEL FOR WAFER ALIGNMENT

      
Application Number 18552623
Status Pending
Filing Date 2022-03-21
First Publication Date 2024-05-23
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Adams, Joshua
  • Montilla, Leonardo Gabriel
  • Thissen, Nick Franciscus Wilhelmus
  • Karssemeijer, Leendert Jan
  • Aarts, Igor Matheus Petronella
  • Dastouri, Zahrasadat

Abstract

Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to ensure accurate exposure of one or more patterns on the substrate. An example method can include receiving measurement data indicative of an interference between light diffracted from a plurality of alignment marks disposed on a substrate or reflected from the substrate. The example method can further include determining substrate deformation data based on the measurement data. The example method can further include determining alignment mark deformation data based on the measurement data. The alignment mark deformation data can include alignment mark deformation spectral pattern data, alignment mark deformation amplitude data, and alignment mark deformation offset data. Subsequently, the example method can include determining a correction to the measurement data based on the substrate deformation data and the alignment mark deformation data.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G01B 9/02055 - Reduction or prevention of errors; Testing; Calibration
  • G01B 11/16 - Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
  • G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

23.

STAGE SYSTEM, LITHOGRAPHIC APPARATUS, METHOD FOR POSITIONING AND DEVICE MANUFACTURING METHOD

      
Application Number 18398860
Status Pending
Filing Date 2023-12-28
First Publication Date 2024-05-23
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Janssens, Stef Marten Johan
  • Scholten, Bert Dirk
  • Donders, Sjoerd Nicolaas Lambertus
  • Van Dam, Teunis
  • Overschie, Peter Mark
  • Spaan-Burke, Theresa Mary
  • Tromp, Siegfried Alexander

Abstract

A system for positioning, a stage system, a lithographic apparatus, a method for positioning and a method for manufacturing a device in which use is made of a stage system that includes a plurality of gas bearing devices. Each gas bearing device includes: a gas bearing body, which has a free surface, a primary channel which extends through the gas bearing body and has an inlet opening in the free surface, a secondary channel system which extends through the gas bearing body and which has a plurality of discharge openings in the free surface. The flow resistance in the secondary channel system is higher than the flow resistance in the primary channel.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

24.

LASER SYSTEM

      
Application Number 18552634
Status Pending
Filing Date 2022-03-07
First Publication Date 2024-05-23
Owner ASML Netherlands B.V. (Netherlands)
Inventor Godfried, Herman Philip

Abstract

A laser system comprising: a laser operable to generate a laser beam; an optical system comprising a first optical element and a second optical element; and an output through which the laser beam exits the laser system; the laser, optical system and output arranged such that the laser beam travels to the first optical element, the second optical element and the output sequentially; wherein the first optical element has a first focal length, the second optical element has a second focal length equal to the first focal length, and the second optical element is spaced from the first optical element by a distance of two times the first focal length.

IPC Classes  ?

  • H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
  • G02B 27/48 - Laser speckle optics
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01S 3/225 - Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex

25.

DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED METROLOGY METHOD

      
Application Number 18280459
Status Pending
Filing Date 2022-03-04
First Publication Date 2024-05-16
Owner
  • ASML NETHERLANDS B.V. (Netherlands)
  • ASML HOLDING N.V. (Netherlands)
Inventor
  • Coene, Willem Marie Julia Marcel
  • Tenner, Vasco Tomas
  • Cramer, Hugo Augustinus Joseph
  • Den Boef, Arie Jeffrrey
  • Koek, Wouter Dick
  • Sokolov, Sergei
  • Van De Wijdeven, Jeroen Johan Maarten
  • Raub, Alexander Kenneth

Abstract

A method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method includes obtaining a holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image, or a portion thereof, using the at least one attenuation function.

IPC Classes  ?

  • G03H 1/04 - Processes or apparatus for producing holograms
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G02B 21/10 - Condensers affording dark-field illumination
  • G02B 21/36 - Microscopes arranged for photographic purposes or projection purposes
  • G03H 1/00 - HOLOGRAPHIC PROCESSES OR APPARATUS - Details peculiar thereto
  • G03H 1/02 - HOLOGRAPHIC PROCESSES OR APPARATUS - Details peculiar thereto - Details
  • G03H 1/08 - Synthesising holograms

26.

LITHOGRAPHIC APPARATUS AND METHOD FOR ILLUMINATION UNIFORMITY CORRECTION

      
Application Number 18282246
Status Pending
Filing Date 2022-02-24
First Publication Date 2024-05-16
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Sotiropoulos, Nikolaos
  • Hartgers, Albertus
  • Ypma, Michael Frederik
  • Steeghs, Marco Matheus Louis

Abstract

A lithographic apparatus comprising an illumination system configured to condition a radiation beam and a uniformity correction system configured to adjust an intensity profile of the radiation beam. The lithographic apparatus comprises a control system configured to control the uniformity correction system at least partially based on a thermal status criterion that is indicative of a thermal state of a part of the lithographic apparatus.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

27.

TARGET MATERIAL TRANSFER SYSTEM COMPONENTS AND METHODS OF MAKING THE SAME

      
Application Number 18280917
Status Pending
Filing Date 2022-02-10
First Publication Date 2024-05-16
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Trees, Dietmar Uwe Herbert
  • Driessen, Theodorus Wilhelmus
  • Sams, Benjamin Andrew
  • Atencio, Edgardo Zamora
  • Dvorak, Ondrej

Abstract

A component for a target material transfer system for a laser-produced plasma radiation source and a method of manufacturing such a component are disclosed. The component, which may, for example, be a target material transfer line, a freeze valve, or a flow restrictor, or some combination of this functionality, is made up of a glass capillary body sealed with glass-to-metal seals at both of its ends to a respective metal fitting. The method of manufacturing involves heating the ends of the glass capillary and then forming them to conform with, and forming a glass-to-metal seal with, the interior contours of the respective channels in each of the metal fittings.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

28.

SYSTEMS AND METHODS FOR DISTRIBUTING LIGHT DELIVERY

      
Application Number 18420091
Status Pending
Filing Date 2024-01-23
First Publication Date 2024-05-16
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Winters, Jasper
  • Van Zwet, Erwin John
  • Van Der Lans, Marcus Johannes
  • De Jager, Pieter Willem Herman
  • Kramer, Geerten Frans Ijsbrand

Abstract

A method for improved sequencing of light delivery in a lithographic process includes determining a sequence of intensities of light to be delivered that includes an interval within the sequence of intensities where substantially no light is delivered to the substrate and delivering light to a substrate by a light source utilizing a digital mirror device (DMD) according to the sequence of intensities.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

29.

PROLONGING OPTICAL ELEMENT LIFETIME IN AN EUV LITHOGRAPHY SYSTEM

      
Application Number 18508987
Status Pending
Filing Date 2023-11-14
First Publication Date 2024-05-16
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ma, Yue
  • Kempen, Antonius Theodorus Wilhelmus
  • Hummler, Klaus Martin
  • Moors, Johannes Hubertus Josephina
  • Rommers, Jeroen Hubert
  • Van De Wiel, Hubertus Johannes
  • Laforge, Andrew David
  • Brizuela, Fernando
  • Wieggers, Rob Carlo
  • Gomes, Umesh Prasad
  • Nedanovska, Elena
  • Korkmaz, Celal
  • Kim, Alexander Downn
  • Duarte Rodrigues Nunes, Rui Miguel
  • Van Dijck, Hendrikus Alphonsus Ludovicus
  • Van Drent, William Peter
  • Jonkers, Peter Gerardus
  • Zhu, Qiushi
  • Yaghoobi, Parham
  • Westerlaken, Jan Steven Christiaan
  • Leenders, Martinus Hendrikus Antonius
  • Ershov, Alexander Igorevich
  • Fomenkov, Igor Vladimirovich
  • Liu, Fei
  • Jacobs, Johannes Henricus Wilhelmus
  • Kuznetsov, Alexey Sergeevich

Abstract

Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

30.

MODEL FOR CALCULATING A STOCHASTIC VARIATION IN AN ARBITRARY PATTERN

      
Application Number 18527891
Status Pending
Filing Date 2023-12-04
First Publication Date 2024-05-16
Owner ASML Netherlands B.V. (Netherlands)
Inventor Hansen, Steven George

Abstract

A method of determining a relationship between a stochastic variation of a characteristic of an aerial image or a resist image and one or more design variables, the method including: measuring values of the characteristic from a plurality of aerial images and/or resist images for each of a plurality of sets of values of the design variables; determining a value of the stochastic variation, for each of the plurality of sets of values of the design variables, from a distribution of the values of the characteristic for that set of values of the design variables; and determining the relationship by fitting one or more parameters from the values of the stochastic variation and the plurality of sets of values of the design variables.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
  • G06F 30/30 - Circuit design
  • G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
  • G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

31.

SYSTEM AND METHOD FOR INSPECTION BY DEFLECTOR CONTROL IN A CHARGED PARTICLE SYSTEM

      
Application Number 18281272
Status Pending
Filing Date 2022-02-09
First Publication Date 2024-05-09
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Zhang, Datong
  • Wang, Chih-Hung
  • Patterson, Oliver Desmond
  • Tang, Xiaohu

Abstract

Apparatuses, systems, and methods for providing beams for using deflector control to control charging on a sample surface of charged particle beam systems. In some embodiments, a controller including circuitry configured to scan a plurality of nodes of the sample to charge the plurality of nodes; adjust a scan rate of a beam such that a quantity of charge deposited on each node of the plurality of nodes varies with respect to at least one other node; generate a plurality of images; and compare the plurality of images to enable detection of a defect associated with any of the plurality of nodes of the sample.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes

32.

A METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES

      
Application Number 18281519
Status Pending
Filing Date 2022-03-09
First Publication Date 2024-05-09
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kara, Dogacan
  • Jensen, Erik
  • Wildenberg, Jochem Sebastiaan
  • Deckers, David Frans Simon
  • Guler, Sila
  • Astudillo Rengifo, Reinaldo Antonio
  • Yudhistira, Yasri
  • Hilhorst, Gijs
  • Caicedo Fernandez, David Ricardo
  • Spiering, Frans Reinier
  • Kho, Sinatra Canggih
  • Blom, Herman Martin
  • Kim, Sang Uk
  • Kim, Hyun-Su

Abstract

A method for determining a substrate model for describing a first measurement dataset and a second measurement dataset relating to a performance parameter. The method include obtaining candidate basis functions for a plurality of substrate models. Steps 1 to 4 are performed iteratively for the first measurement dataset and the second measurement dataset until at least one stopping criterion is met so as to determine the substrate model, the steps including: 1. selecting a candidate basis function from the candidate basis functions; 2. updating a substrate model by adding the candidate basis function into this substrate model to obtain an updated substrate model; 3. evaluating the updated substrate model based on the first measurement dataset and/or second measurement dataset; and 4. determining whether to include the basis function within the substrate model based on the evaluation.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

33.

METHOD AND SYSTEM FOR PREDICTING PROCESS INFORMATION WITH A PARAMETERIZED MODEL

      
Application Number 18282305
Status Pending
Filing Date 2022-02-17
First Publication Date 2024-05-09
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Helfenstein, Patrick Philipp
  • Middlebrooks, Scott Anderson
  • Pisarenco, Maxim
  • Van Kraaij, Markus Gerardus Martinus Maria
  • Konijnenberg, Alexander Prasetya

Abstract

A method and system for predicting process information (e.g., phase data) using a given input (e.g., intensity) to a parameterized model are described. A latent space of a given input is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. Further, an optimum latent space is determined by constraining the latent space with prior information (e.g., wavelength) that enables converging to a solution that causes more accurate predictions of the process information. The optimum latent space is used to predict the process information. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The predicted process information can be complex electric field image having amplitude data and phase data. The parameterized model comprises variational encoder-decoder architecture.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

34.

HOLLOW-CORE OPTICAL FIBER BASED RADIATION SOURCE

      
Application Number 18277821
Status Pending
Filing Date 2022-02-17
First Publication Date 2024-05-09
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Pongers, Willem Richard
  • Uebel, Patrick Sebastian
  • Kohler, Johannes Richard Karl

Abstract

A radiation source including: a hollow core optical fiber having a body having a hollow core for confining a working medium, the hollow core optical fiber being operable to receive pulsed pump radiation such that the received pulsed pump radiation propagates through the hollow core from an input end to an output end of the hollow core optical fiber, wherein one or more source parameters of the radiation source are configured such that the pulsed pump radiation undergoes a soliton self-compression process so as to change a spectrum of the pulsed pump radiation to form output radiation; and at least one dispersion control mechanism being operable to change dispersion characteristics in a first portion of the optical fiber so as to spectrally shift a dispersive wave generated in the soliton self-compression process.

IPC Classes  ?

  • G02F 1/365 - Non-linear optics in an optical waveguide structure
  • G02F 1/35 - Non-linear optics
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

35.

MEASUREMENT APPARATUS

      
Application Number 18536402
Status Pending
Filing Date 2023-12-12
First Publication Date 2024-05-09
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Bijnen, Franciscus Godefridus Casper
  • Kanehara, Junichi
  • Keij, Stefan Carolus Jacobus Antonius
  • Mattaar, Thomas Augustus
  • Van Gils, Petrus Franciscus

Abstract

In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

IPC Classes  ?

  • G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes

36.

METHOD FOR DECOUPLING SOURCES OF VARIATION RELATED TO SEMICONDUCTOR MANUFACTURING

      
Application Number 18407323
Status Pending
Filing Date 2024-01-08
First Publication Date 2024-05-02
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Freeman, Jill Elizabeth
  • Jain, Vivek Kumar
  • Pao, Kuo-Feng
  • Tel, Wim Tjibbo

Abstract

Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.

IPC Classes  ?

  • G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control (DNC), flexible manufacturing systems (FMS), integrated manufacturing systems (IMS), computer integrated manufacturing (CIM)
  • G03F 1/44 - Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales 
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

37.

MULTIPLE CHARGED-PARTICLE BEAM APPARATUS AND METHODS

      
Application Number 18504089
Status Pending
Filing Date 2023-11-07
First Publication Date 2024-05-02
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ren, Weiming
  • Liu, Xuedong
  • Hu, Xuerang
  • Chen, Zhong-Wei
  • Maassen, Martinus Gerardus Johannes Maria

Abstract

Systems and methods of mitigating Coulomb effect in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam along a primary optical axis, a first aperture array comprising a first plurality of apertures having shapes and configured to generate a plurality of primary beamlets derived from the primary charged-particle beam, a condenser lens comprising a plane adjustable along the primary optical axis, and a second aperture array comprising a second plurality of apertures configured to generate probing beamlets corresponding to the plurality of beamlets, wherein each of the plurality of probing beamlets comprises a portion of charged particles of a corresponding primary beamlet based on at least a position of the plane of the condenser lens and a characteristic of the second aperture array.

IPC Classes  ?

  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 37/145 - Combinations of electrostatic and magnetic lenses
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

38.

OBJECT TABLE, A STAGE APPARATUS AND A LITHOGRAPHIC APPARATUS

      
Application Number 18533662
Status Pending
Filing Date 2023-12-08
First Publication Date 2024-05-02
Owner ASML NETHERLANDS B. V. (Netherlands)
Inventor
  • Hermanussen, Sander Jeroen
  • Vermeulen, Johannes Petrus Martinus Bernardus
  • Butler, Hans
  • Jansen, Bas
  • Steur, Michael Marinus Anna

Abstract

An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

39.

MEMBRANE CLEANING APPARATUS

      
Application Number 17768280
Status Pending
Filing Date 2020-08-25
First Publication Date 2024-05-02
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Nikipelov, Andrey
  • Kurilovich, Dmitry

Abstract

A membrane cleaning apparatus for removing particles from a membrane, the apparatus including: a membrane support for supporting the membrane; and a pressure pulse generating mechanism including one or more laser energy sources configured to generate a pressure pulse in a gas. The one or more energy laser sources may be focused to generate a pressure pulse in a gaseous atmosphere. The pressure pulse serves to dislodge particles on the membrane.

IPC Classes  ?

  • G03F 1/82 - Auxiliary processes, e.g. cleaning
  • G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof

40.

HOLLOW-CORE PHOTONIC CRYSTAL FIBER BASED MULTIPLE WAVELENGTH LIGHT SOURCE DEVICE

      
Application Number 18280529
Status Pending
Filing Date 2022-02-09
First Publication Date 2024-05-02
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ni, Yongfeng
  • Pongers, Willem Richard

Abstract

A multiple wavelength light source device and associated method for generating output radiation that has a plurality of discrete output wavelength bands. The multiple wavelength light source device includes a pump radiation source arrangement configured to generate input radiation including at least a first frequency component and a second frequency component; and a hollow-core photonic crystal fiber configured to confine a working medium. The hollow-core photonic crystal fiber is configured to receive the input radiation and to generate the plurality of discrete output wavelength bands distributed over a wavelength range of interest via a seed-assisted cascaded four wave mixing (FWM) process in the working medium.

IPC Classes  ?

  • G02F 1/35 - Non-linear optics
  • G02F 1/39 - Non-linear optics for parametric generation or amplification of light, infrared, or ultraviolet waves

41.

CHARGED PARTICLE APPARATUS AND METHOD

      
Application Number 18406137
Status Pending
Filing Date 2024-01-06
First Publication Date 2024-05-02
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Slot, Erwin
  • Osterberg, Mans Johan, Bertil

Abstract

A charged particle apparatus, configured to project a charged particle multi-beam toward a sample, comprises: a charged particle source configured to emit a charged particle beam; a light source configured to emit light; and a charged particle-optical device configured to project toward the sample sub-beams of a charged particle multi-beam derived from the charged particle beam; wherein the light source is arranged such that the light is projected along paths of the sub-beams through the charged particle-optical device so as to irradiate at least a portion of the sample.

IPC Classes  ?

  • H01J 37/141 - Electromagnetic lenses
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

42.

OBJECTIVE LENS SYSTEM FOR FAST SCANNING LARGE FOV

      
Application Number 18498984
Status Pending
Filing Date 2023-10-31
First Publication Date 2024-05-02
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Li, Shuai
  • Chen, Zhongwei

Abstract

The device includes a beam source for generating an electron beam, a beam guiding tube passed through an objective lens, an objective lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, a control electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen, a deflection system including a plurality of deflection units situated along the optical axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the objective lens, and a detection unit to capture secondary electron (SE) and backscattered electrons (BSE).

IPC Classes  ?

  • H01J 37/145 - Combinations of electrostatic and magnetic lenses
  • H01J 37/141 - Electromagnetic lenses
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

43.

Beam grid layout

      
Application Number 16838976
Grant Number RE049952
Status In Force
Filing Date 2015-10-29
First Publication Date 2024-04-30
Grant Date 2024-04-30
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Kuiper, Vincent Sylvester
  • Slot, Erwin

Abstract

A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.

IPC Classes  ?

  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
  • H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

44.

METHODS AND APPARATUSES FOR SPATIALLY FILTERING OPTICAL PULSES

      
Application Number 18273478
Status Pending
Filing Date 2022-01-12
First Publication Date 2024-04-25
Owner
  • ASML NETHERLANDS B.V. (Netherlands)
  • ASML HOLDING N.V. (Netherlands)
Inventor
  • Alsaqqa, Ali
  • Uebel, Patrick Sebastian
  • Teunissen, Paulus Antonius Andreas

Abstract

An optical filter apparatus including an optical divergence device, operable to receive optical pulses and spatially distribute the optical pulses over an optical plane in dependence with a pulse energy of each of the optical pulses; and a spatial filter, located at the optical plane, operable to apply spatial filtering to the optical pulses based on a location of each of the optical pulses at the optical plane resulting from the spatial distributing.

IPC Classes  ?

  • G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
  • G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for

45.

OPERATING A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF

      
Application Number 18279694
Status Pending
Filing Date 2022-02-03
First Publication Date 2024-04-25
Owner
  • ASML Netherlands B.V. (Netherlands)
  • ASML Holding N.V. (Netherlands)
Inventor
  • Van Goch, Bram Paul Theodoor
  • Kunnen, Johan
  • Na, Sae Na

Abstract

A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an action from a plurality of actions when a determination not to proceed is made, and performing the action on the patterning device and/or a lithographic apparatus.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 1/84 - Inspecting

46.

METHODS AND APPARATUS FOR CHARACTERIZING A SEMICONDUCTOR MANUFACTURING PROCESS

      
Application Number 18277223
Status Pending
Filing Date 2022-02-07
First Publication Date 2024-04-25
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Klein Koerkamp, Niek Willem
  • Hauptmann, Marc
  • Keyvani Janbahan, Aliasghar
  • Wang, Jingchao

Abstract

Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/66 - Testing or measuring during manufacture or treatment

47.

SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME

      
Application Number 18499141
Status Pending
Filing Date 2023-10-30
First Publication Date 2024-04-25
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Lorito, Gianpaolo
  • Nihtianov, Stoyan
  • Liang, Xinqing
  • Kanai, Kenichi

Abstract

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

IPC Classes  ?

  • H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

48.

SUBSTRATE RESTRAINING SYSTEM

      
Application Number 18547470
Status Pending
Filing Date 2022-02-03
First Publication Date 2024-04-25
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Verschuren, Marinus Augustinus Christiaan
  • Poiesz, Thomas

Abstract

A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displacable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.

IPC Classes  ?

  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

49.

Method and Apparatus for Coherence Scrambling in Metrology Applications

      
Application Number 17768851
Status Pending
Filing Date 2020-09-29
First Publication Date 2024-04-25
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Zhou, Zili
  • Ravensbergen, Janneke

Abstract

Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.

IPC Classes  ?

  • G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for

50.

CHARGED PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE APPARATUS AND METHOD

      
Application Number 18402585
Status Pending
Filing Date 2024-01-02
First Publication Date 2024-04-25
Owner ASML Netherlands B.V. (Netherlands)
Inventor Slot, Erwin

Abstract

A method for projecting a charged particle multi-beam toward a sample comprises manipulating respective sub-beams of a charged particle multi-beam using a control lens array comprising a plurality of control lenses for the respective sub-beams; controlling the control lens array to manipulate the sub-beams such that the sub-beams are shaped by respective apertures of a beam shaping aperture array such that less than a threshold current of charged particles of each sub-beam passes through the respective apertures of the beam shaping aperture array, down-beam of the control lens array, comprising a plurality of apertures for the respective sub-beams; and controlling the control lens array to manipulate the sub-beams such that at least the threshold current of at least a proportion of the sub-beams passes through the respective apertures of the beam shaping aperture array.

IPC Classes  ?

  • H01J 37/141 - Electromagnetic lenses
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

51.

CHARGED PARTICLE APPARATUS AND METHOD

      
Application Number 18530109
Status Pending
Filing Date 2023-12-05
First Publication Date 2024-04-18
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Soest, Jurgen
  • Veenstra, Roy Ramon
  • Smakman, Erwin Paul
  • Van Zutphen, Tom
  • Mangnus, Albertus Victor Gerardus

Abstract

The disclosure relates to a charged particle beam apparatus configured to project charged particle beams towards a sample. The charged particle beam apparatus comprises: a plurality of charged particle-optical columns configured to project respective charged particle beams towards the sample, wherein each charged particle-optical column comprises: a charged particle source configured to emit the charged particle beam towards the sample, the charged particle sources being comprised in a source array; an objective lens comprising an electrostatic electrode configured to direct the charged particle beam towards the sample; and a detector associated with the objective lens array, configured to detect signal charged particles emitted from the sample. The objective lens is the most down-beam element of the charged particle-optical column configured to affect the charged particle beam directed towards the sample.

IPC Classes  ?

  • H01J 37/12 - Lenses electrostatic
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

52.

METHOD FOR RULE-BASED RETARGETING OF TARGET PATTERN

      
Application Number 17769107
Status Pending
Filing Date 2020-09-24
First Publication Date 2024-04-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Hamouda, Ayman

Abstract

A method for generating a retargeted pattern for a target pattern to be printed on a substrate. The method includes obtaining (i) the target pattern comprising at least one feature, the at least one feature having geometry including a first dimension and a second dimension, and (ii) a plurality of biasing rules defined as a function of the first dimension, the second dimension, and a property associated with features of the target pattern within a measurement region; determining values of the property at a plurality of locations on the at least one feature of the target pattern, each location surrounded by the measurement region; selecting, from the plurality of biasing rules based on the values of the property, a sub-set of biases; and generating the retargeted pattern by applying the selected sub-set of biases to the at least one feature of the target pattern.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement

53.

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

      
Application Number 18392494
Status Pending
Filing Date 2023-12-21
First Publication Date 2024-04-18
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ren, Weiming
  • Liu, Xuedong
  • Hu, Xuerang
  • Chen, Zhongwei

Abstract

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/06 - Electron sources; Electron guns
  • H01J 37/10 - Lenses
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

54.

CHARGED PARTICLE ASSESSMENT SYSTEM AND METHOD OF ALIGNING A SAMPLE IN A CHARGED PARTICLE ASSESSMENT SYSTEM

      
Application Number 18397896
Status Pending
Filing Date 2023-12-27
First Publication Date 2024-04-18
Owner ASML Netherlands B.V. (Netherlands)
Inventor Slot, Erwin

Abstract

Disclosed herein is a method of aligning a sample in a charged particle assessment system. The system comprises a support for supporting a sample, and is configured to project charged particles in a multi-beam towards a sample along a multi-beam path, the multi-beam comprising an arrangement of beamlets, and to detect signal particles emitted from the sample in response to a corresponding beamlet of the multi-beam. The method comprises: directing the multi-beam of charged particles along the multi-beam path towards an alignment feature of the sample, such that the field of view of the multi-beam of charged particles encompasses the alignment feature; detecting the signal particles emitted from the sample; generating a dataset representative of the alignment feature based on the detecting of the signal particles; and determining a global alignment of the sample with respect to the multi-beam path, using the dataset.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

55.

PROCESS WINDOW BASED ON DEFECT PROBABILITY

      
Application Number 18511454
Status Pending
Filing Date 2023-11-16
First Publication Date 2024-04-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Slachter, Abraham
  • Hunsche, Stefan
  • Tel, Wim Tjibbo
  • Van Oosten, Anton Bernhard
  • Van Ingen Schenau, Koenraad
  • Rispens, Gijsbert
  • Peterson, Brennan

Abstract

A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

56.

METROLOGY TARGET SIMULATION

      
Application Number 18265755
Status Pending
Filing Date 2021-12-08
First Publication Date 2024-04-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Van Kraaij, Markus Gerardus Martinus Maria

Abstract

A method of simulating an electromagnetic response of a metrology target comprising first and second gratings, wherein the second grating is below the first grating, the method comprising: receiving a model defining (i) the first grating as having a first number of grating lines within a pitch, each of the first number of grating lines separated by a first pitch; and (ii) the second grating as having a second number of grating lines within the pitch, each of the second number of grating lines separated by a second pitch; using the model and the first pitch to simulate properties of the first grating and generate a first scattering matrix; using the model and the second pitch to simulate properties of the second grating and generate a second scattering matrix; generating a scattering matrix defining properties of the metrology target by combining the first scattering matrix and the second scattering matrix.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

57.

METHODS OF FITTING MEASUREMENT DATA TO A MODEL AND MODELING A PERFORMANCE PARAMETER DISTRIBUTION AND ASSOCIATED APPARATUSES

      
Application Number 17766585
Status Pending
Filing Date 2020-10-05
First Publication Date 2024-04-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Keyvani Janbahan, Aliasghar
  • Spiering, Frans Reinier
  • Wildenberg, Jochem Sebastiaan
  • Mos, Everhardus Cornelis

Abstract

A method of processing measurement data relating to a substrate processed by a manufacturing process. The method includes obtaining measurement data relating to a performance parameter for at least a portion of the substrate; and fitting the measurement data to a model by minimizing a complexity metric applied to fitting parameters of the model while not allowing the deviation between the measurement data and the fitted model to exceed a threshold value.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

58.

A MACHINE LEARNING MODEL USING TARGET PATTERN AND REFERENCE LAYER PATTERN TO DETERMINE OPTICAL PROXIMITY CORRECTION FOR MASK

      
Application Number 18276018
Status Pending
Filing Date 2022-01-31
First Publication Date 2024-04-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Zhang, Quan
  • Chen, Been-Der
  • Fong, Wei-Chun
  • Zhu, Zhangnan
  • Boone, Robert Elliott

Abstract

Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a machine learning (ML) model to generate a post-OPC image. The images may be input separately or combined into a composite image (e.g., using a linear function) and input to the ML model. The images are rendered from pattern data. For example, a target pattern image is rendered from a target pattern to be printed on a substrate, and a reference layer image such as dummy pattern image is rendered from dummy pattern. The ML model is trained to generate the post-OPC image using multiple images associated with target patterns and reference layers, and using a reference post-OPC image of the target pattern. The post-OPC image may be used to generate a post-OPC mask.

IPC Classes  ?

  • G06T 7/00 - Image analysis
  • G03F 1/36 - Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

59.

PELLICLE MEMBRANE FOR A LITHOGRAPHIC APPARATUS AND METHOD

      
Application Number 18276248
Status Pending
Filing Date 2022-02-03
First Publication Date 2024-04-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Vermeulen, Paul Alexander
  • Houweling, Zomer Silvester

Abstract

A carbon nanotube membrane including carbon nanotubes having a pre-selected bonding configuration or (m, n) chirality, wherein the carbon nanotube membrane has a substantial amount of carbon nanotubes having zigzag (m, 0) chirality and/or armchair (m, m) chirality. An apparatus for the treatment of a carbon-based membrane, a method for treating carbon based membranes, pellicles including carbon based membranes, lithographic apparatuses includes carbon nanotube membranes, as well as the use of carbon nanotube membranes in lithographic apparatuses and methods are also described.

IPC Classes  ?

  • C01B 32/174 - Derivatisation; Solubilisation; Dispersion in solvents
  • B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
  • B01J 19/24 - Stationary reactors without moving elements inside
  • G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

60.

ALIGNMENT METHOD AND ASSOCIATED ALIGNMENT AND LITHOGRAPHIC APPARATUSES

      
Application Number 18276420
Status Pending
Filing Date 2022-02-11
First Publication Date 2024-04-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Thissen, Nick Franciscus Wilhelmus
  • Karssemeijer, Leendert Jan

Abstract

A method for determining a set of correction weights to correct metrology data. The method includes obtaining first metrology data relating to a plurality of illumination settings of measurement radiation used to perform a measurement, where each illumination setting includes a different wavelength, polarization or combination thereof; fitting the metrology data to a model for representing the metrology data and determining fit residuals; and determining the correction weights as correction weights which minimize the fit residuals.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

61.

CONFIGURATION OF PATTERNING PROCESS

      
Application Number 18277014
Status Pending
Filing Date 2022-02-25
First Publication Date 2024-04-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ser, Jung Hoon
  • Park, Sungwoon
  • Lei, Xin
  • Jeong, Jinwoong
  • Zhao, Rongkuo
  • Hsu, Duan-Fu Stephen
  • Li, Xiaoyang

Abstract

Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and the first set of contours. The second patterning process is associated with one or more design variables (e.g., illumination, mask pattern) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.

IPC Classes  ?

  • G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
  • G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

62.

HOLLOW-CORE PHOTONIC CRYSTAL FIBER BASED BROADBAND RADIATION GENERATOR

      
Application Number 18505860
Status Pending
Filing Date 2023-11-09
First Publication Date 2024-04-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ravensbergen, Janneke
  • Uebel, Patrick Sebastian
  • Pongers, Willem Richard

Abstract

A broadband radiation source device configured for generating a broadband output radiation upon receiving pump radiation, the device including: a hollow-core photonic crystal fiber (HC-PCF) including at least one structurally varied portion having at least one structural parameter of the HC-PCF varied with respect to one or more main portions of the HC-PCF, wherein the at least one structurally varied portion includes at least a structurally varied portion located downstream of a position along the length of the HC-PCF where the pump radiation will be spectrally expanded by a modulation instability dominated nonlinear optical process, and wherein the at least one structurally varied portion is configured and located such that the broadband output radiation includes wavelengths in the ultraviolet region.

IPC Classes  ?

  • G02F 1/35 - Non-linear optics
  • G02B 6/02 - Optical fibres with cladding
  • G02F 1/365 - Non-linear optics in an optical waveguide structure
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
  • G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
  • H01S 3/067 - Fibre lasers

63.

NOVEL INTERFACE DEFINITION FOR LITHOGRAPHIC APPARATUS

      
Application Number 18274990
Status Pending
Filing Date 2021-12-20
First Publication Date 2024-04-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Klinkhamer, Jacob Fredrik Friso
  • Van Hinsberg, Michel Alphons Theodorus

Abstract

A method for representing control parameter data for controlling a lithographic apparatus during a scanning exposure of an exposure field on a substrate, the method including: obtaining a set of periodic base functions, each base function out of the set of periodic base functions having a different frequency and a period smaller than a dimension associated with the exposure field across which the lithographic apparatus needs to be controlled; obtaining the control parameter data; and determining a representation of the control parameter data using the set of periodic base functions.

IPC Classes  ?

64.

A METHOD OF DETERMINING A MEASUREMENT RECIPE AND ASSOCIATED METROLOGY METHODS AND APPARATUSES

      
Application Number 18275663
Status Pending
Filing Date 2022-01-12
First Publication Date 2024-04-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Laarhoven, Hendrik Adriaan
  • Van Den Broek, Bastiaan Maurice
  • Rutigliani, Vito Daniele

Abstract

A method of determining a measurement recipe for measurement of in-die targets located within one or more die areas of an exposure field. The method includes obtaining first measurement data relating to measurement of a plurality of reference targets and second measurement data relating to measurement of a plurality of in-die targets, the targets having respective different overlay biases and measured using a plurality of different acquisition settings for acquiring the measurement data. One or more machine learning models are trained using the first measurement data to obtain a plurality of candidate measurement recipes, wherein the candidate measurement recipes include a plurality of combinations of a trained machine learned model and a corresponding acquisition setting; and a preferred measurement recipe is determined from the candidate measurement recipes using the second measurement data.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

65.

A METHOD FOR CHARACTERIZING A MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES

      
Application Number 18387082
Status Pending
Filing Date 2023-11-06
First Publication Date 2024-04-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Tel, Wim Tjibbo
  • Dillen, Hermanus Adrianus
  • Kea, Marc Jurian
  • Maslow, Mark John
  • Thuijs, Koen
  • Engblom, Peter David
  • Huijgen, Ralph Timotheus
  • Slotboom, Daan Maurits
  • Mulkens, Johannes Catharinus Hubertus

Abstract

A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

66.

APPARATUS FOR AND METHOD OF REDUCING CONTAMINATION FROM SOURCE MATERIAL IN AN EUV LIGHT SOURCE

      
Application Number 18528933
Status Pending
Filing Date 2023-12-05
First Publication Date 2024-03-28
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ma, Yue
  • Labetski, Dzmitry
  • Laforge, Andrew David

Abstract

Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

67.

METHOD OF COMPENSATING FOR AN EFFECT OF ELECTRODE DISTORTION, ASSESSMENT SYSTEM

      
Application Number 18534455
Status Pending
Filing Date 2023-12-08
First Publication Date 2024-03-28
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

Assessment systems and methods are disclosed. In one arrangement, an effect of electrode distortion in an objective lens array is compensated. An electrode distortion is adjusted by varying an electrostatic field in the objective lens array. The adjustment is such as to compensate for an effect of electrode distortion on sub-beams of a multi-beam impinging on a sample. A sub-beam is refocused in response to the variation in electrostatic field in the objective lens array. The adjusting and the refocusing comprises changing potentials applied to at least two electrodes of the objective lens array.

IPC Classes  ?

  • H01J 37/12 - Lenses electrostatic
  • H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
  • H01J 37/244 - Detectors; Associated components or circuits therefor

68.

APPARATUS AND METHOD FOR DETERMINING A CONDITION ASSOCIATED WITH A PELLICLE

      
Application Number 18376237
Status Pending
Filing Date 2023-10-03
First Publication Date 2024-03-28
Owner
  • ASML NETHERLANDS B.V. (Netherlands)
  • ASML HOLDING N.V. (Netherlands)
Inventor
  • Brouns, Derk Servatius Gertruda
  • Adams, Joshua
  • Bendiksen, Aage
  • Jacobs, Richard
  • Judge, Andrew
  • Kottapalli, Veera Venkata Narasimha Narendra Phani
  • Lyons, Joseph Harry
  • Modderman, Theodorus Marinus
  • Ranjan, Manish
  • Van De Kerkhof, Marcus Adrianus
  • Xiong, Xugang

Abstract

An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
  • G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof

69.

FEATURE BASED CELL EXTRACTION FOR PATTERN REGIONS

      
Application Number 18039701
Status Pending
Filing Date 2021-11-24
First Publication Date 2024-03-28
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Lin, Yan-Ting

Abstract

Systems and methods of feature-based cell extraction. The methods include obtaining data representative of a layout, wherein the layout includes a pattern region having no vertices, extracting unit cells from the pattern region having no vertices, identifying, using the unit cells, a set of regions of the layout matching the unit cells, and generating, using the unit cells, a hierarchy for the set of regions. In some embodiments the pattern regions have oblique angle features or have no vertices of features. The pattern regions can have a feature including a feature slope, a horizontal or a vertical pitch, or a line-space feature. In some embodiments the hierarchy is optimized using a linear optimization and can be provided for use in modeling, OPC, defect inspection, defect prediction, or SMO.

IPC Classes  ?

  • G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
  • G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

70.

METROLOGY METHOD AND SYSTEM AND LITHOGRAPHIC SYSTEM

      
Application Number 18269983
Status Pending
Filing Date 2021-12-20
First Publication Date 2024-03-21
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Alpeggiani, Filippo
  • Belt, Harm Jan Willem
  • Goorden, Sebatianus Adrianus
  • Setija, Irwan Dani
  • Huisman, Simon Reinald
  • Pellemans, Henricus Petrus Maria

Abstract

A method for measuring a parameter of interest from a target and associated apparatuses. The method includes obtaining measurement acquisition data relating to measurement of the target and finite-size effect correction data and/or a trained model operable to correct for at least finite-size effects in the measurement acquisition data. At least finite-size effects in the measurement acquisition data is corrected for using the finite-size effect correction data and/or the trained model to obtain corrected measurement data and/or obtain a parameter of interest; and where the correcting does not directly determine the parameter of interest, determining the parameter of interest from the corrected measurement data.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

71.

METHOD FOR GENERATING PATTERNING DEVICE PATTERN AT PATCH BOUNDARY

      
Application Number 18382822
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-03-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Zhang, Quan
  • Cho, Yong-Ju
  • Zhu, Zhangnan
  • Huang, Boyang
  • Chen, Been-Der

Abstract

A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.

IPC Classes  ?

  • G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
  • G03F 1/36 - Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
  • G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

72.

INTENSITY ORDER DIFFERENCE BASED METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF

      
Application Number 18255543
Status Pending
Filing Date 2021-12-02
First Publication Date 2024-03-21
Owner
  • ASML Holding N.V. (Netherlands)
  • ASML Netherlands B.V. (Netherlands)
Inventor
  • Kreuzer, Justin Lloyd
  • Huisman, Simon Reinald
  • Goorden, Sebastianus Adrianus
  • Alpeggiani, Filippo

Abstract

The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

73.

PATTERNING DEVICE CONDITIONING SYSTEM AND METHOD

      
Application Number 17768881
Status Pending
Filing Date 2020-09-14
First Publication Date 2024-03-21
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van De Kerkhof, Marcus Adrianus
  • Van De Wetering, Ferdinandus Martinus Jozef Henricus
  • Yakunin, Andrei Mikhailovich

Abstract

A reticle conditioning system includes: a support structure to support a reticle; a gas supply module to provide a flow of gas adjacent to the reticle; and a biasing module to control an electrical potential of the reticle. The biasing module includes a first electrode, a second electrode and a voltage supply. The first and second electrodes are each spaced apart from and facing the reticle, when the reticle is supported by the support structure, so as to at least partially overlap with the reticle. The voltage supply is arranged to maintain the first electrode at a positive voltage, and the second electrode at a negative voltage, these voltages being such that the voltage of the reticle is negative. The second electrode is disposed such that, when the reticle is supported by the support structure, it does not overlap an image forming portion of the reticle.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

74.

SEMICONDUCTOR CHARGED PARTICLE DETECTOR FOR MICROSCOPY

      
Application Number 18038206
Status Pending
Filing Date 2021-10-26
First Publication Date 2024-03-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Nihtianov, Stoyan
  • Kanai, Kenichi
  • Ramachandra Rao, Padmakumar

Abstract

A detector may be provided for a charged particle apparatus comprising: a sensing element including a diode; and a circuit configured to detect an electron event caused by an electron impacting the sensing element, wherein the circuit comprises a voltage monitoring device and a reset device, wherein the reset device is configured to regularly reset the diode by setting a voltage across the diode to a predetermined value, and wherein the voltage monitoring device is connected to the diode to monitor a voltage across the diode in between resets.

IPC Classes  ?

  • H01J 37/244 - Detectors; Associated components or circuits therefor

75.

METHOD TO PREDICT METROLOGY OFFSET OF A SEMICONDUCTOR MANUFACTURING PROCESS

      
Application Number 18276014
Status Pending
Filing Date 2022-01-21
First Publication Date 2024-03-21
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Dos Santos Guzella, Thiago
  • Ishibashi, Masashi
  • Sanno, Noriaki
  • Bastani, Vahid
  • Sahraeian, Reza
  • Saputra, Putra

Abstract

A method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method includes obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of the one or more structures being a measure of yield and the second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of the one or more structures and correlates with the first metrology data; and using the model to obtain the spatially varying process offset (MTD).

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

76.

METHODS AND APPARATUS FOR ACOUSTIC METROLOGY

      
Application Number 18268467
Status Pending
Filing Date 2021-12-15
First Publication Date 2024-03-14
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Arabul, Mustafa Ümit
  • Zhou, Zili
  • Coene, Willem Marie,julia,marcel
  • Verschuren, Coen Adrianus
  • Van Neer, Paul, Louis,maria Joseph
  • Piras, Daniele
  • Blaak, Sandra
  • Koek, Wouter Dick
  • Willekers, Robert Wilhelm

Abstract

A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.

IPC Classes  ?

  • G01N 29/04 - Analysing solids
  • G01N 29/26 - Arrangements for orientation or scanning
  • G01N 29/28 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object - Details providing acoustic coupling

77.

GUIDING DEVICE AND ASSOCIATED SYSTEM

      
Application Number 18380439
Status Pending
Filing Date 2023-10-16
First Publication Date 2024-03-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Labetski, Dzmitry
  • Berendsen, Christianus Wilhelmus Johannes
  • Duarte Rodrigues Nunes, Rui Miguel
  • Ershov, Alexander Igorevich
  • Feenstra, Kornelis Frits
  • Fomenkov, Igor Vladimirovich
  • Hummler, Klaus Martin
  • Johnkadaksham, Arun
  • Kraushaar, Matthias
  • Laforge, Andrew David
  • Langlois, Marc Guy
  • Loginov, Maksim
  • Ma, Yue
  • Mojab, Seyedmohammad
  • Nadir, Kerim
  • Shatalov, Alexander
  • Stewart, John Tom
  • Tegenbosch, Henricus Gerardus
  • Xia, Chunguang

Abstract

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

78.

CHARGED PARTICLE OPTICAL DEVICE, OBJECTIVE LENS ASSEMBLY, DETECTOR, DETECTOR ARRAY, AND METHODS

      
Application Number 18513481
Status Pending
Filing Date 2023-11-17
First Publication Date 2024-03-14
Owner ASML Netherlands B.V. (Netherlands)
Inventor Mangnus, Albertus Victor Gerardus

Abstract

The disclosed embodiments provide a various techniques for detecting secondary charged particles and backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, using mirror detector arrays, using multiple detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

IPC Classes  ?

  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

79.

CHARGED PARTICLE DEVICE AND METHOD

      
Application Number 18517642
Status Pending
Filing Date 2023-11-22
First Publication Date 2024-03-14
Owner ASML Netherlands B.V. (Netherlands)
Inventor Mangnus, Albertus Victor Gerardus

Abstract

The present disclosure provides a charged particle optical device for a charged particle system. The device projects an array of charged particle beams towards a sample. The device comprises a control lens array to control a parameter of the array of beams; and an objective lens array to project the array of beams onto the sample, the objective lens array being down beam of the control lens. The objective lens array comprises: an upper electrode; and a lower electrode arrangement that comprises an up-beam electrode and a down-beam electrode. The device is configured to apply an upper potential to the upper electrode, an up-beam potential to the up-beam electrode and a down-beam potential to the down-beam electrode. The potentials are controlled to control the landing energy of the beams on the sample and. to maintain focus of the beams on the sample at the landing energies.

IPC Classes  ?

  • H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
  • H01J 37/12 - Lenses electrostatic
  • H01J 37/21 - Means for adjusting the focus

80.

TARGET DELIVERY SYSTEM

      
Application Number 18512264
Status Pending
Filing Date 2023-11-17
First Publication Date 2024-03-14
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Vaschenko, Georgiy Olegovich
  • Rollinger, Bob

Abstract

A target delivery system for an extreme ultraviolet (EUV) light source is disclosed. The system includes: a conduit including an orifice configured to fluidly couple to a reservoir; an actuator configured to mechanically couple to the conduit such that motion of the actuator is transferred to the conduit; and a control system coupled to the actuator, the control system being configured to: determine an indication of pressure applied to target material in the reservoir, and control the motion of the actuator based on the determined indication of applied pressure. Moreover, techniques for operating a supply system are disclosed. For example, one or more characteristics of the supply system are determined, and an actuator that is mechanically coupled to the supply system is controlled based on the one or more determined characteristics such that an orifice of the supply system remains substantially free of material damage during operational use.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

81.

Transport System Having a Magnetically Levitated Transportation Stage

      
Application Number 18515952
Status Pending
Filing Date 2023-11-21
First Publication Date 2024-03-14
Owner
  • Massachusetts Institute of Technology (USA)
  • ASML Netherlands B.V. (Netherlands)
Inventor
  • Zhou, Lei
  • Trumper, David L.
  • Gunawardana, Ruvinda

Abstract

A reticle transport system having a magnetically levitated transportation stage is disclosed. Such a system may be suitable for use in vacuum environments, for example, ultra-clean vacuum environments. A magnetic levitated linear motor functions to propel the transportation stage in a linear direction along a defined axis of travel and to magnetically levitate the transportation stage

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H02K 41/03 - Synchronous motors; Motors moving step by step; Reluctance motors

82.

DATA PROCESSING DEVICE AND METHOD, CHARGED PARTICLE ASSESSMENT SYSTEM AND METHOD

      
Application Number 18516020
Status Pending
Filing Date 2023-11-21
First Publication Date 2024-03-14
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wieland, Marco Jan-Jaco
  • Kuiper, Vincent Sylvester

Abstract

A data processing device for detecting defects in sample images generated by a charged particle assessment system, the device comprising: an input module, a filter module, a reference image module and a comparator. The input module is configured to receive a sample image from the charged particle assessment system. The filter module is configured to apply a filter to the sample image to generate a filtered sample image. The reference image module is configured to provide a reference image based on one or more source images. The comparator is configured to compare the filtered sample image to the reference image so as to detect defects in the sample image.

IPC Classes  ?

  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

83.

A METHOD AND SYSTEM FOR PREDICTING ABERRATIONS IN A PROJECTION SYSTEM

      
Application Number 18262511
Status Pending
Filing Date 2022-01-05
First Publication Date 2024-03-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van De Wal, Marinus Maria Johannes
  • Van Berkel, Koos
  • Dolk, Victor Sebastiaan
  • Thissen, Stijn Clyde Natalia
  • Schneiders, Mauritius Gerardus Elisabeth
  • Koevoets, Adrianus Hendrik

Abstract

A method of predicting thermally induced aberrations of a projection system for projecting a radiation beam, the method comprising: calculating an irradiance profile for at least one optical element of the projection system from a power and illumination source pupil of the radiation beam, estimating a temperature distribution as a function of time in the at least one optical element of the projection system using the calculated irradiance profile for the at least one optical element of the projection system; calculating the thermally induced aberrations of the projection system based on the estimated temperature distribution and a thermal expansion parameter map associated with the at least one optical element of the projection system, wherein the thermal expansion parameter map is a spatial map indicating spatial variations of thermal expansion parameters in the at least one optical element of the projection system or a uniform map.

IPC Classes  ?

  • G01M 11/02 - Testing optical properties
  • G01K 1/02 - Means for indicating or recording specially adapted for thermometers
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

84.

OPERATION METHODS OF 2D PIXELATED DETECTOR FOR AN APPARATUS WITH PLURAL CHARGED-PARTICLE BEAMS AND MAPPING SURFACE POTENTIALS

      
Application Number 18269532
Status Pending
Filing Date 2021-12-08
First Publication Date 2024-03-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wang, Yongxin
  • Krupin, Oleg
  • Ren, Weiming
  • Hu, Xuerang
  • Liu, Xuedong

Abstract

A method of detecting charged particles may include detecting beam intensity as a primary charged particle beam moves along a first direction; acquiring a secondary beam spot projection pattern as the primary charged particle beam moves along a second direction; and determining a parameter of a secondary beam spot based on the acquired secondary beam spot projection pattern. A method of compensating for beam spot changes on a detector may include acquiring a beam spot projection pattern on the detector, determining a change of the beam spot projection pattern, and adjusting a parameter of a detector cell of the detector based on the change. Another method may be provided for forming virtual apertures with respect to detector cells of a detector.

IPC Classes  ?

  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

85.

MULTI-CHANNEL LIGHT SOURCE FOR PROJECTION OPTICS HEATING

      
Application Number 18273618
Status Pending
Filing Date 2021-12-30
First Publication Date 2024-03-07
Owner
  • ASML NETHERLANDS B.V. (Netherlands)
  • ASML Holding N.V. (Netherlands)
Inventor
  • Van Bokhoven, Laurentius Johannes Adrianus
  • Ajgaonkar, Mahesh Upendra

Abstract

Systems, apparatuses, and methods are provided for heating a plurality of optical components. An example method can include receiving an input radiation beam from a radiation source. The example method can further include generating a plurality of output radiation beams based on the input radiation beam. The example method can further include transmitting the plurality of output radiation beams towards a plurality of heater head optics configured to heat the plurality of optical components. Optionally, the example method can further include controlling a respective power value, and realizing a flat-top far-field profile, of each of the plurality of output radiation beams.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

86.

SYSTEMS AND METHODS FOR THERMALLY CONDITIONING A WAFER IN A CHARGED PARTICLE BEAM APPARATUS

      
Application Number 18467642
Status Pending
Filing Date 2023-09-14
First Publication Date 2024-03-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Heumen, Martijn Petrus Christianus
  • Gosen, Jeroen Gerard

Abstract

An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

IPC Classes  ?

  • H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

87.

ASSESSMENT SYSTEM, METHOD OF ASSESSING

      
Application Number 18506923
Status Pending
Filing Date 2023-11-10
First Publication Date 2024-03-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in the control lens array is aligned with a sub-beam path of a respective sub-beam of the multi-beam and configured to operate on the respective sub-beam. A plurality of objective electrodes define an objective lens array that directs the sub-beams onto a sample. Objective lenses are aligned with a sub-beam path aligned with a respective control lens. Selectable landing energies are implemented for a sub-beam of the multi-beam by applying corresponding potentials to the control electrodes and the objective electrodes. A controller is configured to select corresponding potentials so a spatial relationship between an image plane of the system and all control electrodes and objective electrodes is the same for each selectable landing energy.

IPC Classes  ?

  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
  • H01J 37/12 - Lenses electrostatic
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

88.

TRAINING MACHINE LEARNING MODELS BASED ON PARTIAL DATASETS FOR DEFECT LOCATION IDENTIFICATION

      
Application Number 18267734
Status Pending
Filing Date 2021-12-08
First Publication Date 2024-02-29
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Moin, Nabeel Noor
  • Lin, Chenxi
  • Zou, Yi

Abstract

A method and apparatus for training a defect location prediction model to predict a defect for a substrate location is disclosed. A number of datasets having data regarding process-related parameters for each location on a set of substrates is received. Some of the locations have partial datasets in which data regarding one or more process-related parameters is absent. The datasets are processed to generate multiple parameter groups having data for different sets of process-related parameters. For each parameter group, a sub-model of the defect location prediction model is created based on the corresponding set of process-related parameters and trained using data from the parameter group. A trained sub-model(s) may be selected based on process-related parameters available in a candidate dataset and a defect prediction may be generated for a location associated with the candidate dataset using the selected sub-model.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06N 20/20 - Ensemble learning

89.

DUAL FOCUS SOLUTON FOR SEM METROLOGY TOOLS

      
Application Number 18270707
Status Pending
Filing Date 2021-12-09
First Publication Date 2024-02-29
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Bosch, Niels Johannes Maria
  • Wang, Xu
  • Hempenius, Peter Paul
  • Wang, Yongqiang
  • Butler, Hans
  • Wang, Youjin
  • Grasman, Jasper Hendrik
  • Sui, Jianzi
  • Chen, Tianming
  • Wu, Aimin

Abstract

There is provided a charged particle apparatus comprising: a particle beam generator, optics, a first and a second positioning device, both configured for positioning the substrate relative to the particle beam generator along its optical axis, and a controller configured for switching between a first operational mode and a second operational mode. The apparatus is configured, when operating in the first operational mode, for irradiating the substrate by the particle beam at a first landing energy of the particle beam and, when operating in the second operational mode, for irradiating the substrate at a second, different landing energy. When operating in the first operational mode, the second positioning device is configured to position the substrate relative to the particle beam generator at a first focus position of the particle beam and in the second operational mode, to position the substrate at a second, different focus position.

IPC Classes  ?

  • H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support

90.

DATA FILTER FOR SCANNING METROLOGY

      
Application Number 18280266
Status Pending
Filing Date 2022-02-21
First Publication Date 2024-02-29
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Caresio, Cristina
  • Kinyanjui, Tabitha Wangari
  • Rogachevskiy, Andrey Valerievich
  • Knarren, Bastiaan Andreas Wilhelmus Hubertus
  • Centeno, Raymund
  • Den Boer, Jan Arie
  • Trogrlic, Viktor

Abstract

A method of processing a data set including equispaced and/or non-equispaced data samples is disclosed. The method includes filtering of the data, wherein a kernel defined by a probability density function is convoluted over samples in the data set to perform a weighted average of the samples at a plurality of positions across the data set, and wherein a first order regression is applied to the filtered data to provide a processed data output.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

91.

CHARGED PARTICLE ASSESSMENT SYSTEM AND METHOD

      
Application Number 18384791
Status Pending
Filing Date 2023-10-27
First Publication Date 2024-02-29
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

The embodiments of the present disclosure provide a charged particle assessment system comprising: a sample holder configured to hold a sample having a surface; a charged particle-optical device configured to project a charged particle beam towards the sample, the charged particle beam having a field of view corresponding to a portion of the surface of the sample, the charged particle-optical device having a facing surface facing the sample holder; and a projection assembly arranged to direct a light beam along a light path such that the light beam reflects off the facing surface up-beam, with respect to the light path, of being incident on the portion of the surface of the sample.

IPC Classes  ?

  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
  • H01J 37/244 - Detectors; Associated components or circuits therefor

92.

APPARATUS USING MULTIPLE BEAMS OF CHARGED PARTICLES

      
Application Number 18477213
Status Pending
Filing Date 2023-09-28
First Publication Date 2024-02-29
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Hu, Xuerang
  • Ren, Weiming
  • Liu, Xuedong
  • Chen, Zhong-Wei

Abstract

Disclosed herein is an apparatus comprising: a first electrically conductive layer, a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the eclectically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/12 - Lenses electrostatic
  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes

93.

MODULAR AUTOENCODER MODEL FOR MANUFACTURING PROCESS PARAMETER ESTIMATION

      
Application Number 18259354
Status Pending
Filing Date 2021-12-20
First Publication Date 2024-02-22
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Onose, Alexandru
  • Tiemersma, Bart Jacobus Martinus
  • Verheul, Nick
  • Dirks, Remco

Abstract

A modular autoencoder model is described. The modular autoencoder model comprises input models configured to process one or more inputs to a first level of dimensionality suitable for combination with other inputs; a common model configured to: reduce a dimensionality of combined processed inputs to generate low dimensional data in a latent space; and expand the low dimensional data in the latent space into one or more expanded versions of the one or more inputs suitable for generating one or more different outputs; output models configured to use the one or more expanded versions of the one or more inputs to generate the one or more different outputs, the one or more different outputs being approximations of the one or more inputs; and a prediction model configured to estimate one or more parameters based on the low dimensional data in the latent space.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G06N 3/0455 - Auto-encoder networks; Encoder-decoder networks
  • G06N 3/08 - Learning methods

94.

A METROLOGY APPARATUS AND A METROLOGY METHOD

      
Application Number 18268847
Status Pending
Filing Date 2021-12-16
First Publication Date 2024-02-22
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Raaymakers, Jeroen Arnoldus Leonardus Johannes
  • Lomans, Bram Antonius Gerardus
  • Den Boef, Arie Jeffrey
  • Butler, Hans

Abstract

A metrology apparatus for measuring a parameter of interest of a target on a substrate, the metrology apparatus including: m×n detectors, wherein m≥1 and n≥1; a first frame; and (n−1) second frames; and (m−1)×n intermediate frames, wherein each detector is connected to one of the intermediate or first or second frames via a primary positioning assembly; and each intermediate frame is connected to one of the first or second frames via a secondary positioning assembly.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

95.

AN INTERFEROMETER SYSTEM, POSITIONING SYSTEM, A LITHOGRAPHIC APPARATUS, A JITTER DETERMINATION METHOD, AND A DEVICE MANUFACTURING METHOD

      
Application Number 18269547
Status Pending
Filing Date 2021-12-12
First Publication Date 2024-02-22
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Jansen, Maarten Jozef

Abstract

An interferometer system includes an optics system configured to allow a first light beam to travel along a measurement path including a target, and a second light beam to travel along a fixed reference path excluding the target; and a signal generator configured to introduce a power-modulated optical signal in the measurement path or the reference path to determine jitter caused by components of the interferometer system downstream of the signal generator.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
  • G01B 9/02055 - Reduction or prevention of errors; Testing; Calibration

96.

METROLOGY METHODS AND APPARATUSES

      
Application Number 18270644
Status Pending
Filing Date 2021-12-23
First Publication Date 2024-02-22
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Theeuwes, Thomas
  • Wildenberg, Jochem Sebastiaan
  • Zhang, Lei
  • Van Ithersum, Ronald

Abstract

Disclosed is a method of determining a performance parameter or a parameter derived therefrom, the performance parameter being associated with a performance of a lithographic process for forming one or more structures on a substrate subject to the lithographic process. The method comprises obtaining a probability description distribution comprising a plurality of probability descriptions of the performance parameter, each probability description corresponding to a different position on the substrate and decomposing each probability description into a plurality of component probability descriptions to obtain a plurality of component probability description distributions. A component across-substrate-area model is determined for each of said plurality of component probability descriptions, which models its respective component probability description across a substrate area; and a value for said performance parameter or parameter derived therefrom is determined based on the component across-substrate-area models.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

97.

DATA-DRIVEN PREDICTION AND IDENTIFICATION OF FAILURE MODES BASED ON WAFER-LEVEL ANALYSIS AND ROOT CAUSE ANALYSIS FOR SEMICONDUCTOR PROCESSING

      
Application Number 18268924
Status Pending
Filing Date 2021-12-09
First Publication Date 2024-02-22
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Xu, Huina
  • Matsushita, Yana
  • Hasan, Tanbir
  • Kou, Ren-Jay
  • Goel, Namita Adrianus
  • Li, Hongmei
  • Pisarenco, Maxim
  • Kooiman, Marleen
  • Batistakis, Chrysostomos
  • Onvlee, Johannes

Abstract

A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.

IPC Classes  ?

98.

MACHINE LEARNING-BASED SYSTEMS AND METHODS FOR GENERATING SYNTHETIC DEFECT IMAGES FOR WAFER INSPECTION

      
Application Number 18268953
Status Pending
Filing Date 2021-12-08
First Publication Date 2024-02-22
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wang, Zhe
  • Yu, Liangjiang
  • Pu, Lingling

Abstract

An improved systems and methods for generating a synthetic defect image are disclosed. An improved method for generating a synthetic defect image comprises acquiring a machine learning-based generator model; providing a defect-free inspection image and a defect attribute combination as inputs to the generator model; and generating by the generator model, based on the defect-free inspection image, a predicted synthetic defect image with a predicted defect that accords with the defect attribute combination.

IPC Classes  ?

99.

MODULAR AUTOENCODER MODEL FOR MANUFACTURING PROCESS PARAMETER ESTIMATION

      
Application Number 18270074
Status Pending
Filing Date 2021-12-20
First Publication Date 2024-02-22
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Tiemersma, Bart Jacobus Martinus
  • Onose, Alexandru
  • Verheul, Nick
  • Dirks, Remco

Abstract

A modular autoencoder model is described. The modular autoencoder model comprises input models configured to process one or more inputs to a first level of dimensionality suitable for combination with other inputs; a common model configured to: reduce a dimensionality of combined processed inputs to generate low dimensional data in a latent space; and expand the low dimensional data in the latent space into one or more expanded versions of the one or more inputs suitable for generating one or more different outputs; output models configured to use the one or more expanded versions of the one or more inputs to generate the one or more different outputs, the one or more different outputs being approximations of the one or more inputs; and a prediction model configured to estimate one or more parameters based on the low dimensional data in the latent space.

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06N 3/0455 - Auto-encoder networks; Encoder-decoder networks
  • G06N 3/0895 - Weakly supervised learning, e.g. semi-supervised or self-supervised learning

100.

METHOD FOR DETERMINING A FOCUS ACTUATION PROFILE FOR ONE OR MORE ACTUATORS OF A LITHOGRAPHIC EXPOSURE APPARATUS

      
Application Number 18270988
Status Pending
Filing Date 2021-12-24
First Publication Date 2024-02-22
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Gorp, Simon Hendrik Celine
  • Van Reenen, Stephan

Abstract

A method for determining a focus actuation profile for one or more actuators of a lithographic exposure apparatus in control of a lithographic exposure process for exposure of an exposure area including at least two topographical levels. The method includes determining a continuous single focus actuation profile for the at least two topographical levels from an objective function including a per-level component operable to optimize a focus metric per topographical level for each of the at least two topographical levels.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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