A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising:
an objective lens array assembly comprising a plurality of objective lenses, each configured to project one of a plurality of charged-particle beams onto a sample;
a detector array associated with the objective lens array assembly and configured to detect charged-particles emitted from the sample; and
a circuit comprising an amplifier in data communication with the detector array;
wherein the amplifier is configured to be tunable in order to tune amplification of signals from the detector array.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Disclosed is an apparatus for and method of aligning a target composed of a target material and a conditioning beam provided to condition the target by changing the target’s shape, mass distribution, etc., in which the conditioning beam includes structured light in the form of an inhomogeneous distribution of a propagation mode such as a polarization mode across a spatial mode of the target.
A method of measuring a delay time of a propagation of a signal in a line in a circuit structure, the method comprises irradiating the line by pulses of a charged particle beam, wherein a pulse repetition frequency of the pulses of the charged particle beam is varied. The method further comprises measuring, for each of the pulse repetition frequencies, a secondary charged particle emission responsive to the irradiating the line by the pulses of the charged particle beam at the respective pulse repetition frequency, and deriving the delay time of the line based on the secondary charged particle emission responsive to the varying of the pulse repetition frequency.
A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.
A lithographic system and a method for exposing a substrate are provided. The method includes providing a plurality of mask sets. Each mask set includes complementary masks corresponding to a respective pattern. The method further comprises exposing the substrate with the plurality of mask sets. A stitch location between the complementary masks of a mask set is different than a stitch location between the complementary masks of each other mask set of the plurality of mask sets.
Disclosed herein is an inspection tool and a method for identifying defects in a sample. The method includes steps of scanning a first area of a sample with a first detector-beam and scanning a second area of the sample with a second detector-beam, then receiving first and second signals that are derived from the first and second detector-beams. The first and second signals are compared to determine whether a defect is present in the sample.
A method of processing an out-coupling end of a hollow core fiber including a plurality of anti-resonance elements surrounding a hollow core, and a hollow core fiber having been so processed. The method may include performing a tapering step to form a taper in the anti-resonance elements; performing a cleaving step at the taper to form at least one tapered out-coupling end of the hollow core fiber; and performing an end processing step including further heating the out-coupling end in a controlled manner to smoothen the out-coupling end.
A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sample. The pixelized electron detector includes multiple pixels arranged in a grid pattern. The multiple pixels may be configured to generate multiple detection signals, wherein each detection signal corresponds to the signal electrons received by a corresponding pixel of the pixelized electron detector. The apparatus further includes a controller includes circuitry configured to determine a topographical characteristic of a structure within the sample based on the detection signals generated by the multiple pixels, and identifying a defect within the sample based on the topographical characteristic of the structure of the sample.
A base plate configured to be attached to a semiconductor substrate, wherein the base plate is configured to remain attached to the semiconductor substrate during a sequence of processing steps performed on the semiconductor substrate, and the base plate is made from a material having a Young's modulus larger than 300 GPa.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
11.
AN ILLUMINATION SOURCE AND ASSOCIATED METROLOGY APPARATUS
Disclosed is an illumination source comprising a gas delivery system being configured to provide a gas target for generating an emitted radiation at an interaction region of the gas target, and an interferometer for illuminating at least part of the gas target with an interferometer radiation to measure a property of the gas target.
Methods and systems for determining a mapped intensity metric are described. Determining the mapped intensity metric includes determining an intensity metric for a manufacturing system. The intensity metric is determined based on a reflectivity of a location on a substrate and a manufacturing system characteristic. Determining the mapped intensity metric also includes determining a mapped intensity metric for a reference system. The reference system has a reference system characteristic. The mapped intensity metric is determined based on the intensity metric, the manufacturing system characteristic, and the reference system characteristic, to mimic determination of the intensity metric for the manufacturing system using the reference system. In some embodiments, the reference system is virtual, and the manufacturing system is physical.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
13.
SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.
Objective lens array assemblies and associated methods are disclosed. In one arrangement, the objective lens array assembly focuses a multi-beam of sub-beams on a sample. Planar elements define a plurality of apertures aligned along sub-beam paths. An objective lens array projects the multi-beam towards a sample. Apertures of one or more of the planar elements compensate for off-axis aberrations in the multi-beam.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
15.
METHOD FOR DETERMINING STOCHASTIC VARIATION ASSOCIATED WITH DESIRED PATTERN
A method for determining stochastic edge placement error associated with a pattern. The method includes acquiring, via a metrology tool, a plurality of images of the pattern at a defined location on the substrate without performing a substrate alignment therebetween; and generating at least two data: (i) first data associated with the pattern using a first set of images of the plurality of images, and (ii) second data associated with the pattern using a second set of images of the plurality of images. The first set of images and the second set of images include at least one different image. The method further includes determining (e.g., via a decomposition algorithm), using the first data and the second data associated with the pattern at the defined location, the stochastic edge placement error associated with the pattern.
A vibration isolator (10; 210) for supporting a payload and isolating the payload from vibrations has a contact member (12) configured for supporting the payload, at least two pressurized gas compartments (24) arranged offset from each other to support the contact member at different locations, which pressurized gas compartments are connected to each other via a tubing system (54). The tubing system contains at least one restriction (66) at which a cross section of the tubing system is reduced by at least 50%.
F16F 9/04 - Springs, vibration-dampers, shock-absorbers, or similarly-constructed movement-dampers using a fluid or the equivalent as damping medium using gas only in a chamber with a flexible wall
F16F 15/027 - Suppression of vibrations of non-rotating, e.g. reciprocating, systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating system using fluid means comprising control arrangements
17.
METHOD OF PERFORMING METROLOGY, METHOD OF TRAINING A MACHINE LEARNING MODEL, METHOD OF PROVIDING A LAYER COMPRISING A TWO-DIMENSIONAL MATERIAL, METROLOGY APPARATUS
Methods of performing metrology. In one arrangement a substrate has a layer. The layer comprises a two-dimensional material. A target portion of the layer is illuminated with a beam of radiation and a distribution of radiation in a pupil plane is detected to obtain measurement data. The measurement data is processed to obtain metrology information about the target portion of the layer. The illuminating, detecting and processing are performed for plural different target portions of the layer to obtain metrology information for the plural target portions of the layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.
A target material supply apparatus includes: first and second fluid flow components (1122, 1126) that define an axial flow path when joined together, in which the axial flow path is between a source of target material fluid and a nozzle supply apparatus; and a coupling apparatus configured to seal the joint between the first and second fluid flow components. The coupling apparatus includes a gasket (1105) having an annular shape defining an inner opening that is a part of the axial flow path when seated and sealed. When the gasket is seated between the first and second fluid flow components to thereby seal the joint formed by attaching the first and second fluid flow components, pressure applied to the gasket from target material fluid traversing the gasket inner opening along the axial flow path improves the hermetic function of the seal at the joint. Optionally, a functional insert like e.g. a flow restrictor (1160) can be seated in the gasket.
F16L 17/02 - Joints with packing adapted to sealing by fluid pressure with sealing rings arranged between outer surface of pipe and inner surface of sleeve or socket
20.
A FABRICATION PROCESS DEVIATION DETERMINATION METHOD, CALIBRATION METHOD, INSPECTION TOOL, FABRICATION SYSTEM AND A SAMPLE
A method for determining deviations in a fabrication process, the method including: providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range; illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range; detecting light reflected and/or scattered from the layer of the sample; and determining deviations in the fabrication process from the detected light.
An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved alignment mechanism is disclosed. An improved charged particle beam inspection apparatus may include a second electron detection device to generate one or more images of one or more beam spots of the plurality of secondary electron beams during the alignment mode. The beam spot image may be used to determine the alignment characteristics of one or more of the plurality of secondary electron beams and adjust a configuration of a secondary electron projection system.
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01J 37/244 - Detectors; Associated components or circuits therefor
Disclosed herein is an aperture array configured to define sub-beams that are scanned in a scanning direction in a charged particle apparatus, the aperture array comprising a plurality of apertures arranged in an aperture pattern that comprises: a plurality of parallel aperture rows, wherein apertures are arranged along the aperture rows and the aperture rows are inclined relative to the scanning direction; an edge aperture row defining an edge of the aperture pattern; and an adjacent aperture row adjacent the edge row; wherein the edge aperture row and the adjacent aperture row each comprise fewer apertures than another aperture row of the aperture pattern.
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.
A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Generating a control output for a patterning process is described. A control input is received. The control input is for controlling the patterning process. The control input includes one or more parameters used in the patterning process. The control output is generated with a trained machine learning mod& based on the control input, The machine learning model is trained with training data generated from simulation of the patterning process and/or actual process data, The training data includes 1) a plurality of training control inputs corresponding to a plurality of operational conditions of the patterning process, where the plurality of operational conditions of the patterning process are associated with operational condition specific behavior of the patterning process over time, and 2) training control outputs generated using a physical model based on the training control inputs.
A method for calculating a spatial map associated with a component, the spatial map indicating spatial variations of thermal expansion parameters in the component, the method comprising: providing or determining a temperature distribution in the component as a function of time; calculating the spatial map associated with the component using the provided or determined temperature distribution in the component and optical measurements of a radiation beam that has interacted directly or indirectly with the component, the optical measurements being time synchronized with the provided or determined temperature distribution in the component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein N is an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.
A method of generating broadband output radiation and associated broadband radiation source. The method includes generating pulses of input radiation having a duration between 50fs and 400fs and having a rise time of less than 60fs; and exciting a working medium within a hollow core fiber with the pulses of input radiation.
G02F 1/365 - Non-linear optics in an optical waveguide structure
G02F 1/355 - Non-linear optics characterised by the materials used
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
30.
SYSTEMS, PRODUCTS, AND METHODS FOR IMAGE-BASED PATTERN SELECTION
A method for selecting patterns for training a model to predict patterns to be printed on a substrate. The method includes (a) obtaining images of multiple patterns, wherein the multiple patterns correspond to target patterns to be printed on a substrate; (b) grouping the images into a group of special patterns and multiple groups of main patterns; and (c) outputting a set of patterns based on the images as training data for training the model, wherein the set of patterns includes the group of special patterns and a representative main pattern from each group of main patterns.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
Systems, apparatuses, and methods are provided for steering aligning a laser beam and a fuel target. An example method can include generating, at a first rate, first sensing data indicative of a first overlap between a fuel target and a laser beam. The example method can further include generating, at a second rate, second sensing data indicative of a second overlap between the fuel target and the laser beam. The method can further include generating, at a third rate, and based on the first sensing data and the second sensing data, a steering control signal configured to steer the laser beam or the fuel target. In some aspects, the second rate can be different from the first rate, and the third rate can be about equal to the first rate. In other aspects, the first rate and the second rate can be about equal to the third rate.
A method and apparatus for selecting patterns from an image such as a design layout. The method includes obtaining an image (e.g., of a target layout) having a plurality of patterns; determining, based on pixel intensities within the image, a metric (e.g., entropy) indicative of an amount of information contained in one or more portions of the image; and selecting, based on the metric, a sub-set of the plurality of patterns from the one or more portions of the image having values of the metric within a specified range. The sub-set of patterns can be provided as training data for training a model associated with a patterning process.
Systems, apparatuses, and methods are provided for detecting a particle on a substrate surface. An example method can include receiving, by a grating structure, coherent radiation from a radiation source. The method can further include generating, by the grating structure, a focused coherent radiation beam based on the coherent radiation. The method can further include transmitting, by the grating structure, the focused coherent radiation beam toward a region of a surface of a substrate. The method can further include receiving, by the grating structure, photons scattered from the region in response to illuminating the region with the focused coherent radiation beam. The method can further include measuring, by a photodetector, the photons received by the grating structure. The method can further include generating, by the photodetector and based on the measured photons, an electronic signal for detecting a particle located in the region of the surface of the substrate.
A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
36.
METHOD OF DETERMINING A CORRECTION STRATEGY IN A SEMICONDUCTOR MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES
A method of determining a correction strategy in a semiconductor manufacturing process. The method can include obtaining functional indicator data relating to functional indicators associated with one or more process parameters of each of a plurality of different control regimes of the semiconductor manufacturing process and/or a tool associated with the semiconductor manufacturing process and using the functional indicator data as an input to a trained model to determine for which of the control regimes should a correction be determined so as to improve performance of the semiconductor manufacturing process according to at least one quality metric being representative of a quality of the semiconductor manufacturing process. The correction is then calculated for the determined control regime(s).
A pellicle frame includes: a first portion; and a plurality of second portions. The first portion is for connection to a border of a pellicle. The first portion includes a hollow and generally rectangular body. The plurality of second portions are for connection to a patterning device. The first portion and the plurality of second portions are all formed from a first material. Each of the second portions is connected to the first portion by a spring portion formed from the first material. Such a pellicle frame is advantageous since the first portion, the plurality of second portions and the spring portions are all formed from a same material.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
38.
METROLOGY METHOD AND ASSOCIATED METROLOGY AND LITHOGRAPHIC APPARATUSES
A method to determine a performance indicator indicative of alignment performance of a processed substrate. The method includes obtaining measurement data including a plurality of measured position values of alignment marks on the substrate and calculating a positional deviation between each measured position value and a respective expected position value. These positional deviations are used to determine a directional derivative between the alignment marks, and the directional derivatives are used to determine at least one directional derivative performance indicator.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A lithographic apparatus has a substrate holder configured to hold a substrate and a projection system configured to project a radiation beam onto the substrate held by the substrate holder. There is also a fluid handling system configured to confine immersion liquid to a space between a part of the projection system and a surface of the substrate so that the radiation beam can irradiate the surface of the substrate by passing through the immersion liquid. An excitation device is provided to generate surface acoustic waves in the substrate and propagating toward the immersion liquid.
B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
40.
LITHOGRAPHIC APPARATUS, METHOD FOR UNLOADING A SUBSTRATE AND METHOD FOR LOADING A SUBSTRATE
A method for unloading a substrate from a support table configured to support the substrate, the method including: supplying gas to a gap between a base surface of the support table and the substrate via a plurality of gas flow openings in the support table, wherein during an initial phase of unloading the gas is supplied through at least one gas flow opening in an outer region of the support table and not through any gas flow opening in a central region of the support table radially inward of the outer region, and during a subsequent phase of unloading the gas is supplied through at least one gas flow opening in the outer region and at least one gas flow opening in the central region.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B25B 11/00 - Work holders or positioners not covered by groups , e.g. magnetic work holders, vacuum work holders
41.
SYSTEM AND METHOD FOR CONDITIONING OPTICAL APPARATUSES
The present invention relates to a stage system (130), which comprises a pre-exposure element (134), and to a method employing the pre-exposure element for conditioning an optical system (100). The pre-exposure element comprises a radiation receiving area at a surface of the stage system, wherein the radiation receiving area comprises at least one pre-exposure plate configured to receive radiation. The stage system comprises further a controller (140), wherein the controller is capable to control an optical parameter of the pre-exposure element, herewith controlling a portion of received radiation reflected by the pre-exposure element.
Method and apparatus for adapting a distribution model of a machine learning fabric. The distribution model is for mitigating the effect of concept drift, and is configured to provide an output as input to a functional model of the machine learning fabric. The functional model is for performing a machine learning task. The method may include obtaining a first data point, and providing the first data point as input to one or more distribution monitoring components of the distribution model. The one or more distribution monitoring components have been trained on a plurality of further data points. A metric representing a correspondence between the first data point and the plurality of further data points is determined, by at least one of the one or more distribution monitoring components. Based on the error metric, the output of the distribution model is adapted.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A transmissive diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises an absorbing layer. The diffraction grating is for use with radiation having a first wavelength (for example (EUV radiation). The absorbing layer is provided with a two-dimensional array of through-apertures. The absorbing layer is formed from a material which has a refractive index for the radiation having the first wavelength in the range 0.% to 1.04.
A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
B23K 26/354 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
B33Y 80/00 - Products made by additive manufacturing
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
H01J 3/00 - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS - Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00 - Manufacture or treatment of nanostructures
H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
46.
OBJECTIVE LENS ARRAY ASSEMBLY, ELECTRON-OPTICAL SYSTEM, ELECTRON-OPTICAL SYSTEM ARRAY, METHOD OF FOCUSING, OBJECTIVE LENS ARRANGEMENT
Arrangements involving objective lens array assemblies for charged-particle assessment tools are disclosed. In one arrangement, the assembly comprises an objective lens array and a control lens array. Each objective lens projects a respective sub-beam of a multi-beam onto a sample. The control lens array is associated with the objective lens array and positioned up-beam of the objective lens array. The control lenses pre-focus the sub-beams.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.
The present invention provides a method for calculating a corrected substrate height map of a first substrate using a height level sensor. The method comprises: sampling the first substrate by means of the height level sensor with the first substrate moving with a first velocity, wherein the first velocity is a first at least partially non-constant velocity of the first substrate with respect to the height level sensor, to generate a first height level data, generating a first height map based on the first height level data, and calculating a corrected substrate height map by subtracting a correction map from the first height map, wherein the correction map is calculated from the difference between a first velocity height map and a second velocity height map.
A method for determining a likelihood that an assist feature of a mask pattern will print on a substrate. The method includes obtaining (i) a plurality of images of a pattern printed on a substrate and (ii) variance data the plurality of images of the pattern; determining, based on the variance data, a model configured to generate variance data associated with the mask pattern; and determining, based on model-generated variance data for a given mask pattern and a resist image or etch image associated with the given mask pattern, the likelihood that an assist feature of the given mask pattern will be printed on the substrate. The likelihood can be applied to adjust one or more parameters related to a patterning process or a patterning apparatus to reduce the likelihood that the assist feature will print on the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/105 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
50.
METHOD FOR CALIBRATING A SCANNING CHARGED PARTICLE MICROSCOPE
A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.
A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
52.
DETERMINING PATTERN RANKING BASED ON MEASUREMENT FEEDBACK FROM PRINTED SUBSTRATE
Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.
Disclosed herein is a connector for electrically connecting a feedthrough of a vacuum tool to a high voltage power source, the connector comprising: a connector wire assembly configured to be in electrical connection with a high voltage power source; and a connector insulator comprising a channel configured to extend into the connector insulator and to receive a feedthrough pin so as to electrically connect the connector wire assembly with the feedthrough pin; wherein the connector insulator is configured to engage with the feedthrough so that a boundary surface of the connector insulator extends substantially bi-directionally in the direction of the longitudinal axis of the channel.
The disclosure relates to charged-particle multi-beam columns and multi-beam column arrays. In one arrangement, a sub-beam defining aperture array forms sub-beams from a beam of charged particles. A collimator array collimates the sub-beams An objective lens array projects the collimated sub-beams onto a sample. A detector detects charged particles emitted from the sample. Each collimator is directly adjacent to one of the objective lenses. The detector is provided in a plane down-beam from the sub-beam defining aperture array.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
56.
OBJECT HOLDER, ELECTROSTATIC SHEET AND METHOD FOR MAKING AN ELECTROSTATIC SHEET
An object holder configured to support an object, the object holder comprising: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers; and a circumferential barrier for reducing outflow of gas escaping from space between the object and the core body.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
57.
A DETECTOR SUBSTRATE FOR USE IN A CHARGED PARTICLE MULTI-BEAM ASSESSMENT TOOL
A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.
H01J 37/244 - Detectors; Associated components or circuits therefor
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
58.
MARK TO BE PROJECTED ON AN OBJECT DURING A LITHOGRAHPIC PROCESS AND METHOD FOR DESIGNING A MARK
The first layer mark and the second layer mark are adapted to be projected onto each other during the lithographic process. The first layer components and the second layer components are adapted to be arranged in a plurality of different overlay configurations, each overlay configuration comprising a number of the plurality of the first layer components and a number of the plurality of the second layer components, and each overlay configuration having a different overlay distance at which each first layer component is arranged in a first direction of an associated second layer component of the second layer components. The method comprises determining an overlay step which represents a difference between the different overlay distances of the plurality of overlay configurations, determining a largest overlay distance, determining the number of first layer components and/or the number of associated second layer components in each overlay configuration.
The invention provides a method for thermo-mechanical control of a heat sensitive element (Ml) subject to a heat load, comprising: -providing a non-linear thermo-mechanical model of the heat sensitive element describing a dynamical relationship between characteristics of the heat load and deformation of the heat sensitive element; -calculating a control signal on the basis of an optimization calculation of the non-linear model, -providing an actuation signal to a heater (HE), wherein the actuation signal is at least partially based on the control signal, -heating the heat sensitive element by the heater on the basis of the actuation signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: a plurality of control lenses, a plurality of objective lenses and a controller. The plurality of control lenses are configured to control a parameter of a respective sub-beam. The plurality of objective lenses are configured to project one of the plurality of charged-particle beams onto a sample. The controller controls the control lenses and the objective lenses so that the charged particles are incident on the sample with a desired landing energy, demagnification and/or beam opening angle.
Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
Described herein is a method for training a denoising model. The method includes obtaining a first set of simulated images based on design patterns. The simulated images may be clean and can be added with noise to generate noisy simulated images. The simulated clean and noisy images are used as training data to generate a denoising model.
An assembly for collimating broadband radiation, the assembly including: a convex refractive singlet lens having a first spherical surface for coupling the broadband radiation into the lens and a second spherical surface for coupling the broadband radiation out of the lens, wherein the first and second spherical surfaces have a common center; and a mount for holding the convex refractive singlet lens at a plurality of contact points having a centroid coinciding with the common center.
A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.
G06F 30/28 - Design optimisation, verification or simulation using fluid dynamics, e.g. using Navier-Stokes equations or computational fluid dynamics [CFD]
A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
Disclosed is a method for modeling measurement data over a substrate area and associated apparatus. The method comprises obtaining measurement data relating to a first layout; modeling a second model based on said first layout; evaluating the second model on a second layout, the second layout being more dense than said first layout; and fitting a first model to this second model according to the second layout.
A charged particle system generates a charged particle multi beam along a multi beam path. The charged particle system comprises an aperture array, a beam limit array and a condenser lens. In the aperture array are an array of apertures to generate from an up-beam charged particle source charged particle paths down-beam of the aperture array. The beam-limit array is down-beam of the aperture array. Defined in the beam-limit array is an array of beam-limit apertures for shaping the charged particle multi beam path. The condenser lens system is between the aperture array and the beam-limit array. The condenser lens system selectively operates different of rotation settings that define different ranges of beam paths between the aperture array and the beam-limit array. At each rotation setting of the condenser lens system, each beam-limit aperture of the beam-limit array lies on a beam path down-beam of the aperture array.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
69.
LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, ILLUMINATION SWITCHES AND METHODS THEREOF
A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light 5 beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.
A detector includes a plurality of sensing elements, section circuitry that communicatively couples a first set of sensing elements to an input of first signal processing circuitry, and a switch network that connects sets of sensing elements. Inter-element switches may connect adjacent sensing elements, including those in a diagonal direction. An output bus may be connected to each sensing element of the first set by a switching element. There may be a common output (pickup point) arranged at one sensing element that is configured to output signals from the first set. Various switching and wiring schemes are proposed. For example, the common output may be directly connected to the switch network. A switch may be provided between the output bus and first signal processing circuitry. A switch may be provided between the switch network and the first signal processing circuitry.
A metrology system includes a radiation source, first, second, and third optical systems, and a processor. The first optical system splits the radiation into first and second beams of radiation and impart one or more phase differences between the first and second beams. The second optical system directs the first and second beams toward a target structure to produce first and second scattered beams of radiation. The third optical system interferes the first and second scattered beams at an imaging detector. The imaging detector generates a detection signal based on the interfered first and second scattered beams. The metrology system modulates one or more phase differences of the first and second scattered beams based on the imparted one or more phase differences. The processor analyzes the detection signal to determine a property of the target structure based on at least the modulated one or more phase differences.
Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Abstract
A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
Disclosed herein is a multi-beam charged particle column configured to project a multi-beam of charged particles towards a target, the multi-beam charged particle column comprising at least one aperture array comprising at least two different aperture patterns; and a rotator configured to rotate the aperture array between the different aperture patterns.
Disclosed herein is an actuator arrangement comprising: a wall defining a cavity; a casing protruding from the wall and defining an interior in fluid communication with the cavity; an actuator comprising: a force imparter configured to impart force on a component in the cavity; and an actuation mechanism configured to drive the force imparter, wherein at least part of the actuation mechanism is within said interior of the casing and exposed to the cavity; and a control element configured to control the actuation mechanism, wherein the control element extends through the casing via a seal.
The invention provides a magnet assembly for a planar electromagnetic motor, the magnet assembly comprising:—a first plurality of superconductive (SC) coils, inside an outer circumference and arranged in a planar pattern such as a rectangular pattern,—a second plurality of SC coils, arranged along an outer boundary of the planar pattern, a coil of the first plurality of SC coils having a first in-plane shape and a coil of the second plurality of SC coils having a second in-plane shape, different from the first in-plane shape, wherein the second plurality of SC coils is arranged at least partly inside the outer circumference.
Disclosed is a method for determining a focus parameter value used to expose at least one structure on a substrate. The method comprises obtaining measurement data relating to a measurement of said at least one structure, wherein the at least one structure comprises a single periodic structure per measurement location and decomposing said measurement data into component data comprising one or more components of said measurement data. At least one of said components is processed to extract processed component data having a reduced dependence on non-focus related effects and a value for the focus parameter is determined from said processed component data. Associated apparatuses and patterning devices are also disclosed.
The present invention provides a fluid purging system (100) for an optical element (30), comprising a ring and a fluid supply system (40). The ring being formed of a body entirely surrounding the optical element, the ring defining a space (5) radially inwards thereof and adjacent to the optical element. The ring is formed by at least one first wall portion (10) and at least one second wall portion (20A;20B), wherein an average height of the first wall portion is greater than an average height of the second wall portion. The fluid supply system is positioned radially outwards of the ring and configured to supply fluid to pass over the at least one second wall portion to the space.
Systems, apparatuses, and methods are provided for generating level data. An example method can include receiving first level data for a first region of a substrate. The first region can include a first subregion having a first surface level, and a second subregion having a second surface level. The example method can further include generating, based on the first level data, measurement control map data. The example method can further include generating, based on the measurement control map data, second level data for a second region of the substrate. The second region can include a plurality of third subregions each having a third surface level equal to about the first surface level, and, optionally, no region having a surface level equal to about the second surface level.
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
G01B 11/16 - Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
79.
APPARATUS FOR USE IN A METROLOGY PROCESS OR LITHOGRAPHIC PROCESS
An apparatus for use in a metrology process or a lithographic process, the apparatus including: an object support module adapted to hold an object; and a first gas shower arranged on a first side of the object support module and adapted to emit a gas with a first velocity in a first gas direction which is a horizontal direction to cause a net gas flow in the apparatus to be a substantially horizontal gas flow in the first gas direction at least above the object support module.
Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.
Electron-optical devices and associated methods are disclosed. In one arrangement, an electron-optical device projects a multi-beam of sub-beams of charged particles to a sample. A plurality of plates are provided in which are defined respective aperture arrays. The plates comprise an objective lens array configured to project the sub-beams towards the sample. The aperture arrays defined in at least two of the plates each have a geometrical characteristic configured to apply a perturbation to a corresponding target property of the sub-beams. A controller controls potentials applied to the plates having the geometrical characteristics such that the applied perturbations together substantially compensate for a variation in the target property over a range of a parameter of the device.
The present invention concerns a method of determining alignment of electron optical components in a charged particle apparatus. The charged particle apparatus comprising: an aperture array and a detector configured to detect charged particles corresponding to beamlets that pass through the corresponding apertures in the aperture array. The method comprises: scanning each beamlet in a plane of the aperture array over a portion of the aperture array in which a corresponding aperture of the aperture array is defined so that charged particles of each beamlet may pass through the corresponding aperture; detecting during the scan any charged particles corresponding to each beamlet that passes through the corresponding aperture; generating a detection pixel for each beamlet based on the detection of charged particles corresponding to each beamlet at intervals of the scan; and collecting information comprised in the detection pixel such as the intensity of charged particles.
A method of determining a number of charged particles incident on a detector within a period may include generating a first signal that is based on a charged particle impacting a sensing element of the detector, performing processing using the first signal based on a predetermined characteristic of a charged particle arrival event on the detector, and outputting a count signal based on the processing.
A waveguide including: a first section, the first section configured to generate, by a non-linear optical process, a broadened wavelength spectrum of pulsed radiation provided to an input end of the waveguide; a second section, the second section including an output end of the waveguide, the second section configured to exhibit a larger absolute value of group velocity dispersion than the first section; wherein a length of the second section is configured to reduce a peak intensity of one or more peaks in the broadened wavelength spectrum by at least 20%.
An apparatus and method of diagnosing an unobserved operational parameter of a machine or apparatus. The method including obtaining a plurality of causal relationships between pairs of parameters of the machine or apparatus, wherein each pair includes a cause parameter and an effect parameter. For at least some of the parameters, a decomposition of the parameters into a plurality of information components is determined, based on the determined causal relationships between the parameters. The decomposition includes a synergistic information component including information obtained from a combination of at least two causal relationships having the parameter as effect parameter. A parameter is determined to include a negative synergistic information component. Based on the existence of the negative synergistic information component, it is diagnosed that an unobserved operational parameter provides a cause for the parameter including the negative synergistic information component.
A method for verifying a feature of a mask design. The method includes determining localized shapes of the feature, and determining whether there is a breach by the feature of verification criteria based on the localized shapes. The verification criteria specifies correspondence between a threshold of a pattern characteristic and a localized shape. For example, the feature of the mask design may be a freeform curvilinear mask feature. The localized shapes may include local curvatures of individual locations on segments of the feature. In some embodiments, the threshold of the pattern characteristic is a spacing threshold, and the verification criteria specifies the spacing threshold as a function of the local curvatures. The method may facilitate enhanced mask rules checks (MRC), including better definition and verification of MRC criteria for freeform curvilinear masks, and/or have other advantages.
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
87.
SYSTEMS, PRODUCTS, AND METHODS FOR GENERATING PATTERNING DEVICES AND PATTERNS THEREFOR
A method for improving a design of a patterning device. The method includes (i) obtaining mask points of a design of a mask feature, wherein the mask feature corresponds to a target feature in a target pattern to be printed on a substrate; and (ii) adjusting locations of the mask points to generate a modified design of the mask feature based on the adjusted mask points.
G03F 1/44 - Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
G03F 1/36 - Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
Disclosed are an optical system, in particular for microlithography, and a method for operating an optical system. According to one disclosed aspect, the optical system includes at least one mirror (100, 500, 600) having an optical effective surface (101, 501, 601) and a mirror substrate (110, 510, 610), wherein at least one cooling channel (115, 515, 615) in which a cooling fluid is configured to flow is arranged in the mirror substrate, for dissipating heat that is generated in the mirror substrate due to absorption of electromagnetic radiation incident from a light source on the optical effective surface, and a unit (135, 535, 635) to adjust the temperature and/or the flow rate of the cooling fluid either dependent on a measured quantity that characterizes the thermal load in the mirror substrate or dependent on an estimated/expected thermal load in the mirror substrate for a given power of the light source.
An electrostatic chuck control system configured to be utilized during an inspection process of a wafer, the electrostatic chuck control system comprising an electrostatic chuck of a stage configured to be undocked during the inspection process, wherein the electrostatic chuck comprises a plurality of components configured to influence an interaction between the wafer and the electrostatic chuck during the inspection process, a first sensor configured to generate measurement data between at least some of the plurality of components and the wafer, and a controller including circuitry configured to receive the measurement data to determine characteristics of the wafer relative to the electrostatic chuck and to generate adjustment data to enable adjusting, while the stage is undocked, at least some of the plurality of components based on the determined characteristics.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
91.
SUBSTRATE SUPPORT SYSTEM, LITHOGRAPHIC APPARATUS AND METHOD OF EXPOSING A SUBSTRATE
A substrate support system is provided that includes: a support part configured to support a bottom surface of a substrate on a support plane; a moveable part moveable between a retracted position, in which a top end of the moveable part is below the support plane, and an extended position, in which the top end of the moveable part is above the support plane, such that the top end supports the bottom surface of the substrate above the support plane in the extended position; and a measurement system configured to measure a time taken for the moveable part to move from the retracted position to the extended position, to compare the measured time with a reference time, and to generate a signal when the measured time deviates from the reference time by more than a predetermined amount.
A method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method includes determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.
A method for generating an alignment signal that includes detecting local dimensional distortions of an alignment mark and generating the alignment signal based on the alignment mark. The alignment signal is weighted based on the local dimensional distortions of the alignment mark. Detecting the local dimensional distortions can include irradiating the alignment mark with radiation, the alignment mark including a geometric feature, and detecting one or more phase and/or amplitude shifts in reflected radiation from the geometric feature. The one or more phase and/or amplitude shifts correspond to the local dimensional distortions of the geometric feature. A parameter of the radiation, an alignment inspection location within the geometric feature, an alignment inspection location on a layer of a structure, and/or a radiation beam trajectory across the geometric feature may be determined based on the one or more detected phase and/or amplitude shifts.
An apparatus includes a first charged particle beam manipulator positioned in a first layer configured to influence a charged particle beam and a second charged particle beam manipulator positioned in a second layer configured to influence the charged particle beam. The first and second charged particle beam manipulators may each include a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes. A first driver system electrically connected to the first set may be configured to provide a plurality of discrete output states to the first set. A second driver system electrically connected to the second set may be configured to provide a plurality of discrete output states to the second set. The first and second charged-particle beam manipulators may each comprise a plurality of segments; and a controller having circuitry configured to individually control operation of each of the plurality of segments.
Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.
A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.
The invention provides a method for calibration of an optical measurement system, which may be a heterodyne interferometer system, wherein a first optical axis and a second optical axis have a different optical path length, the method comprises: ∘measuring a first measurement value along the first optical axis using a first measurement beam, ∘measuring a second measurement value along the second optical axis using a second measurement beam, ∘changing a wavelength of the first measurement beam and the second measurement beam, ∘measuring a further first measurement value along the first optical axis using the first measurement beam with changed wavelength, measuring a further second measurement value along the second optical axis using the second measurement beam with changed wavelength, ∘determining a cyclic error of the optical measurement system on the basis of the measured values, and ∘storing a corrective value based on the cyclic error.
An optical element for a lithographic apparatus, the optical element including an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, the method including depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses including such optical elements are also described.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
Disclosed is an actuator unit for positioning an optical element, comprising a first reluctance actuator comprising a first stator part and a first mover part separated by a gap in a first direction. The first mover part is constructed and arranged to be connected to the optical element and for moving the optical element. The first stator part is constructed and arranged to exert a magnetic force on the first mover part along a first line of actuation. The first mover part is movable relative to the first stator part in the first direction. The first stator part and the first mover part are constructed and arranged such that the first line of actuation is, in operational use, moving along with the first mover part in a second direction perpendicular to the first direction, for at least a predetermined movement range of the first mover part in the second direction.
patents
