ASML Netherlands B.V.

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New (last 4 weeks) 54
2023 September (MTD) 40
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IPC Class
G03F 7/20 - Exposure; Apparatus therefor 3,998
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically 665
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma 485
G03B 27/42 - Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original 476
G03B 27/52 - Projection printing apparatus, e.g. enlarger, copying camera - Details 399
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09 - Scientific and electric apparatus and instruments 113
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1.

CHARGED PARTICLE ASSESSMENT TOOL, INSPECTION METHOD AND IMAGE

      
Application Number 18323096
Status Pending
Filing Date 2023-05-24
First Publication Date 2023-09-28
Owner ASML Netherlands B.V. (Netherlands)
Inventor Veenstra, Roy Ramon

Abstract

A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: an objective lens array assembly comprising a plurality of objective lenses, each configured to project one of a plurality of charged-particle beams onto a sample; a detector array associated with the objective lens array assembly and configured to detect charged-particles emitted from the sample; and a circuit comprising an amplifier in data communication with the detector array; wherein the amplifier is configured to be tunable in order to tune amplification of signals from the detector array.

IPC Classes  ?

  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/12 - Lenses electrostatic
  • H01J 37/244 - Detectors; Associated components or circuits therefor

2.

EUV LIGHT SOURCE TARGET METROLOGY

      
Application Number EP2023054911
Publication Number 2023/180017
Status In Force
Filing Date 2023-02-28
Publication Date 2023-09-28
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Tao, Yezheng
  • Bankhead, Jaden, Robert
  • Haendel, Sylvi
  • Huang, Eric
  • Farr, Erik, Peter

Abstract

Disclosed is a system for and method of performing target metrology in an extreme ultraviolet light source in which illumination for a target imaging/detection system is selected to have a center wavelength less than 400 nm. In some embodiments the illumination is additionally selected to have a line width of at least 4 nm. In some embodiments illumination is obtained as a second harmonic of a Ti:sapphire laser or as a harmonic of an Nd:YAG laser.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

3.

LITHOGRAPHIC PATTERN REPRESENTATION WITH CURVILINEAR ELEMENTS

      
Application Number EP2023055028
Publication Number 2023/180020
Status In Force
Filing Date 2023-02-28
Publication Date 2023-09-28
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Luo, Ya
  • Lu, Yen-Wen
  • Chen, Been-Der
  • Howell, Rafael C.
  • Zhang, Quan
  • Zhu, Zhangnan
  • Chen, Xiaoshuang

Abstract

Methods, systems, and computer software are disclosed for determining a mask pattern for use with a lithographic process. One method includes assigning locations of two-dimensional elements based on a target pattern, associating the two-dimensional elements based on association criteria to form a cluster that represents a mask feature, and adjusting the two-dimensional elements of the cluster to vary the mask feature.

IPC Classes  ?

  • G03F 1/36 - Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
  • G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
  • G03F 7/20 - Exposure; Apparatus therefor

4.

METHODS AND PATTERNING DEVICES AND APPARATUSES FOR MEASURING FOCUS PERFORMANCE OF A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD

      
Application Number 18018065
Status Pending
Filing Date 2021-07-06
First Publication Date 2023-09-28
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Liu, Fei
  • Lian, Jin
  • Huang, Zhuangxiong
  • De Winter, Laurentius Cornelius
  • Staals, Frank

Abstract

Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G01N 21/47 - Scattering, i.e. diffuse reflection
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

5.

CHARGED PARTICLE APPARATUS AND METHOD

      
Application Number EP2023054840
Publication Number 2023/180016
Status In Force
Filing Date 2023-02-27
Publication Date 2023-09-28
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Wieland, Marco, Jan-Jaco

Abstract

A charged particle device projects charged-particle beams along beampaths towards a sample location. The device comprises: a charged-particle lens assembly for manipulating the beams and a controller. The lens assembly comprises plates each having an aperture array for passage of beampaths. The plates are at different plate locations along the beampaths. The controller controls the charged-particle device such that charged particles of the beams have different energy values at the different plate locations along the beampaths. The lens assembly comprises a corrector comprising an individual correctors configured to perform aberration correction at respective apertures independently of each other. The corrector is associated with the plate at the plate location at which the energy value is smallest, the strength of an electric field adjacent to the plate is greatest and/or a ratio of the energy value to strength of an electric field adjacent to the plate is smallest.

IPC Classes  ?

  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators

6.

METHOD OF WAFER GROUNDING UTILIZING WAFER EDGE BACKSIDE COATING EXCLUSION AREA

      
Application Number EP2023056749
Publication Number 2023/180168
Status In Force
Filing Date 2023-03-16
Publication Date 2023-09-28
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Li, Yinglong
  • Bosch, Niels, Johannes, Maria
  • Goossens, Jef
  • Wu, Aimin
  • Asghar, Humad
  • Chen, Tianming
  • Hempenius, Peter, Paul
  • Ke, Xiang
  • Sans Mercader, Joan
  • Zhang, Zhi
  • Van Der Toorn, Jan-Gerard, Cornelis

Abstract

Systems and methods are provided for grounding a wafer (604;904) in a charged particle beam apparatus. The systems and methods include providing an exclusion area (613;911) in a backside film 608;908 on the wafer of sufficient size to allow an electrical connection between the wafer and an electrical contact (612;912) of the charged particle beam apparatus. The systems and methods may include contacting a pin body to a surface of the wafer, the wafer having a coating on the surface, and the pin body comprising a first tip and a second tip each extending from the pin body; wherein the contacting takes place at a first exclusion area of the coating by any one of the first tip, the second tip, or any combination thereof. There is also provided a method for forming a coating on a wafer surface, comprising masking a first exclusion area on the wafer surface with a first exclusion mask.

IPC Classes  ?

  • H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
  • H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

7.

SETUP AND CONTROL METHODS FOR A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES

      
Application Number EP2023054358
Publication Number 2023/179999
Status In Force
Filing Date 2023-02-22
Publication Date 2023-09-28
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Hauptmann, Marc
  • Meijerink, Rick, Jeroen
  • Zeng, Si-Han
  • Bao, Jiazi

Abstract

Disclosed is a method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method comprises determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.

IPC Classes  ?

8.

LITHOGRAPHIC APPARATUS AND METHODS FOR MULTI-EXPOSURE OF A SUBSTRATE

      
Application Number 18017365
Status Pending
Filing Date 2021-07-19
First Publication Date 2023-09-21
Owner
  • ASML Holding N.V. (Netherlands)
  • ASML Netherlands B.V. (Netherlands)
Inventor
  • Brunner, Timothy Allan
  • Van De Kerkhof, Marcus Adrianus

Abstract

A lithographic system and a method for exposing a substrate are provided. The method includes providing a plurality of mask sets. Each mask set includes complementary masks corresponding to a respective pattern. The method further comprises exposing the substrate with the plurality of mask sets. A stitch location between the complementary masks of a mask set is different than a stitch location between the complementary masks of each other mask set of the plurality of mask sets.

IPC Classes  ?

9.

EUV LIGHT SOURCE TARGET METROLOGY

      
Application Number 18016553
Status Pending
Filing Date 2021-07-23
First Publication Date 2023-09-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor Rafac, Robert Jay

Abstract

Disclosed is an apparatus for and method of aligning a target composed of a target material and a conditioning beam provided to condition the target by changing the target’s shape, mass distribution, etc., in which the conditioning beam includes structured light in the form of an inhomogeneous distribution of a propagation mode such as a polarization mode across a spatial mode of the target.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

10.

DELAY TIME MEASUREMENT METHOD AND SYSTEM

      
Application Number 18120278
Status Pending
Filing Date 2023-03-10
First Publication Date 2023-09-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Gaury, Benoit Herve
  • Van Rens, Jasper Frans Mathijs

Abstract

A method of measuring a delay time of a propagation of a signal in a line in a circuit structure, the method comprises irradiating the line by pulses of a charged particle beam, wherein a pulse repetition frequency of the pulses of the charged particle beam is varied. The method further comprises measuring, for each of the pulse repetition frequencies, a secondary charged particle emission responsive to the irradiating the line by the pulses of the charged particle beam at the respective pulse repetition frequency, and deriving the delay time of the line based on the secondary charged particle emission responsive to the varying of the pulse repetition frequency.

IPC Classes  ?

  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

11.

INSPECTION APPARATUS AND INSPECTION METHOD

      
Application Number 18200947
Status Pending
Filing Date 2023-05-23
First Publication Date 2023-09-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Kumar, Nitish
  • Quintanilha, Richard
  • Van Kraaij, Markus Gerardus Martinus Maria
  • Tsigutkin, Konstantin
  • Coene, Willem Marie Julia Marcel

Abstract

A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

IPC Classes  ?

12.

INSPECTION METHOD AND INSPECTION TOOL

      
Application Number 18320157
Status Pending
Filing Date 2023-05-18
First Publication Date 2023-09-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Scotuzzi, Marijke
  • Veenstra, Roy Ramon
  • Kiers, Antoine Gaston Marie

Abstract

Disclosed herein is an inspection tool and a method for identifying defects in a sample. The method includes steps of scanning a first area of a sample with a first detector-beam and scanning a second area of the sample with a second detector-beam, then receiving first and second signals that are derived from the first and second detector-beams. The first and second signals are compared to determine whether a defect is present in the sample.

IPC Classes  ?

  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/244 - Detectors; Associated components or circuits therefor

13.

A METHOD FOR DETERMINING A VERTICAL POSITION OF A STRUCTURE ON A SUBSTRATE AND ASSOCIATED APPARATUSES

      
Application Number EP2023054365
Publication Number 2023/174650
Status In Force
Filing Date 2023-02-22
Publication Date 2023-09-21
Owner
  • STICHTING VU (Netherlands)
  • STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
  • UNIVERSITEIT VAN AMSTERDAM (Netherlands)
  • ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Den Boef, Arie, Jeffrey
  • Van Schaijk, Theodorus, Thomas, Marinus
  • Buijs, Robin, Daniel
  • De Boer, Johannes Fitzgerald
  • Messinis, Christos

Abstract

A method for determining a vertical position of a structure on a substrate with respect to a nominal vertical position is disclosed. The method comprises obtaining complex field data relating to scattered radiation from said structure, for a plurality of different wavelengths, determining variation in a phase parameter with wavelength from said complex field data; and determining said vertical position with respect to a nominal vertical position from the determined variation in phase with wavelength.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G01N 21/21 - Polarisation-affecting properties
  • G03H 1/04 - Processes or apparatus for producing holograms

14.

HOLLOW CORE FIBER LIGHT SOURCE AND A METHOD FOR MANUFACTURING A HOLLOW CORE FIBER

      
Application Number 18017059
Status Pending
Filing Date 2021-07-12
First Publication Date 2023-09-21
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Abdolvand, Amir
  • Craus, Cristian Bogdan
  • Bauerschmidt, Sebastian Thomas

Abstract

A method of processing an out-coupling end of a hollow core fiber including a plurality of anti-resonance elements surrounding a hollow core, and a hollow core fiber having been so processed. The method may include performing a tapering step to form a taper in the anti-resonance elements; performing a cleaving step at the taper to form at least one tapered out-coupling end of the hollow core fiber; and performing an end processing step including further heating the out-coupling end in a controlled manner to smoothen the out-coupling end.

IPC Classes  ?

  • G02B 6/032 - Optical fibres with cladding with non-solid core or cladding
  • G02B 6/25 - Preparing the ends of light guides for coupling, e.g. cutting
  • G02B 6/02 - Optical fibres with cladding

15.

SYSTEMS AND METHODS FOR SIGNAL ELECTRON DETECTION IN AN INSPECTION APPARATUS

      
Application Number 18018578
Status Pending
Filing Date 2021-07-26
First Publication Date 2023-09-21
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Jen, Chih-Yu
  • Chen, Chien-Hung
  • Ma, Long
  • La Fontaine, Bruno
  • Zhang, Datong

Abstract

A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sample. The pixelized electron detector includes multiple pixels arranged in a grid pattern. The multiple pixels may be configured to generate multiple detection signals, wherein each detection signal corresponds to the signal electrons received by a corresponding pixel of the pixelized electron detector. The apparatus further includes a controller includes circuitry configured to determine a topographical characteristic of a structure within the sample based on the detection signals generated by the multiple pixels, and identifying a defect within the sample based on the topographical characteristic of the structure of the sample.

IPC Classes  ?

  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

16.

ILLUMINATION ARRANGEMENT FOR A METROLOGY DEVICE AND ASSOCIATED METHOD

      
Application Number EP2023054311
Publication Number 2023/174648
Status In Force
Filing Date 2023-02-21
Publication Date 2023-09-21
Owner
  • STICHTING VU (Netherlands)
  • STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
  • UNIVERSITEIT VAN AMSTERDAM (Netherlands)
  • ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Schaijk, Theodorus, Thomas, Marinus
  • Ajgaonkar, Mahesh, Upendra
  • Den Boef, Arie, Jeffrey
  • De Boer, Johannes Fitzgerald
  • Messinis, Christos
  • Buijs, Robin, Daniel

Abstract

Disclosed is an illumination arrangement for providing at least one radiation beam for use as an illumination beam and/or reference beam in a metrology device. The illumination arrangement comprises at least one radiation beam modifier module operable to receive source illumination and output a modified radiation beam comprising a first beam component and a second beam component. Each radiation beam modifier module comprises at least one path length varying arrangement for controllably varying the optical path length of at least one of said first beam component and said second beam component, such that said first beam component and second beam component of said modified radiation beam comprise a respective different optical path length.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G02B 5/18 - Diffracting gratings
  • G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
  • G03H 1/04 - Processes or apparatus for producing holograms
  • G03F 7/20 - Exposure; Apparatus therefor
  • G01J 9/00 - Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
  • G01N 15/14 - Electro-optical investigation
  • G02B 21/10 - Condensers affording dark-field illumination
  • G02B 21/36 - Microscopes arranged for photographic purposes or projection purposes
  • G02B 26/06 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the phase of light
  • G02B 27/42 - Diffraction optics

17.

BASE PLATE AND SUBSTRATE ASSEMBLY

      
Application Number 18024042
Status Pending
Filing Date 2021-08-10
First Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Vries, Gosse Charles
  • Van Der Voort, Dennis Dominic

Abstract

A base plate configured to be attached to a semiconductor substrate, wherein the base plate is configured to remain attached to the semiconductor substrate during a sequence of processing steps performed on the semiconductor substrate, and the base plate is made from a material having a Young's modulus larger than 300 GPa.

IPC Classes  ?

  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

18.

RESIDUAL GAS ANALYSER

      
Application Number EP2023053415
Publication Number 2023/169770
Status In Force
Filing Date 2023-02-13
Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Den Brink, Jeroen, Aalt
  • Mondt, Eva

Abstract

Disclosed herein is a residual gas analyser, RGA, for determining the amounts of gas components in a vacuum tool, the RGA comprising a first detector and a second detector, wherein: the first detector is configured so that the largest gas component amount that is determinable by the first detector is greater than the largest gas component amount that is determinable by the second detector; the first detector is configured so that the smallest gas component amount that is determinable by the first detector is less than or equal to the largest gas component amount that is determinable by the second detector; and the second detector is configured so that the smallest gas component amount that is determinable by the second detector is less than the smallest gas component amount that is determinable by the first detector.

IPC Classes  ?

  • H01J 49/02 - Particle spectrometers or separator tubes - Details

19.

METHODS, SYSTEMS, AND SOFTWARE FOR DETERMINATION OF FAILURE RATES OF LITHOGRAPHIC PROCESSES

      
Application Number EP2023054117
Publication Number 2023/169806
Status In Force
Filing Date 2023-02-17
Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Lei, Xin
  • Lin, Chenxi
  • Hansen, Steven, George
  • Zou, Yi

Abstract

Methods, software, and systems are disclosed for predicting a failure rate for a design layout. The predicting can include obtaining an image of the design layout in a lithography process. Derivatives of the image intensity at select locations in the design layout can be determined. The failure rate of the design layout can be determined based on the derivatives at the select locations.

IPC Classes  ?

20.

AN ILLUMINATION SOURCE AND ASSOCIATED METROLOGY APPARATUS

      
Application Number 18017178
Status Pending
Filing Date 2021-06-14
First Publication Date 2023-09-14
Owner ASML Netherlands B,V. (Netherlands)
Inventor
  • Jin, Wenjie
  • Smorenburg, Petrus Wilhelmus
  • Lin, Nan
  • Porter, Christina Lynn
  • O'Dwyer, David
  • Arnold, Cord Louis
  • Donders, Sjoerd Nicolaas,lambertus

Abstract

Disclosed is an illumination source comprising a gas delivery system being configured to provide a gas target for generating an emitted radiation at an interaction region of the gas target, and an interferometer for illuminating at least part of the gas target with an interferometer radiation to measure a property of the gas target.

IPC Classes  ?

21.

MAPPING METRICS BETWEEN MANUFACTURING SYSTEMS

      
Application Number 18019968
Status Pending
Filing Date 2021-07-26
First Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Zwart, Siebe Tjerk
  • Dirks, Remco
  • Nanda, Gaurav
  • Fagginger Auer, Bastiaan Onne

Abstract

Methods and systems for determining a mapped intensity metric are described. Determining the mapped intensity metric includes determining an intensity metric for a manufacturing system. The intensity metric is determined based on a reflectivity of a location on a substrate and a manufacturing system characteristic. Determining the mapped intensity metric also includes determining a mapped intensity metric for a reference system. The reference system has a reference system characteristic. The mapped intensity metric is determined based on the intensity metric, the manufacturing system characteristic, and the reference system characteristic, to mimic determination of the intensity metric for the manufacturing system using the reference system. In some embodiments, the reference system is virtual, and the manufacturing system is physical.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

22.

SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS

      
Application Number 18196432
Status Pending
Filing Date 2023-05-12
First Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Meijerink, Rowin
  • Saputra, Putra
  • Smorenberg, Pieter Gerardus Jacobus
  • Thijssen, Theo Wilhelmus Maria
  • Elbattay, Khalid
  • Hlaing, Ma Su Su
  • Derwin, Paul
  • Zhong, Bo
  • Komatsu, Masaya

Abstract

A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

IPC Classes  ?

23.

OBJECTIVE LENS ARRAY ASSEMBLY, ELECTRON-OPTICAL SYSTEM, ELECTRON-OPTICAL SYSTEM ARRAY, METHOD OF FOCUSING

      
Application Number 18316169
Status Pending
Filing Date 2023-05-11
First Publication Date 2023-09-14
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

Objective lens array assemblies and associated methods are disclosed. In one arrangement, the objective lens array assembly focuses a multi-beam of sub-beams on a sample. Planar elements define a plurality of apertures aligned along sub-beam paths. An objective lens array projects the multi-beam towards a sample. Apertures of one or more of the planar elements compensate for off-axis aberrations in the multi-beam.

IPC Classes  ?

  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

24.

VACUUM CHAMBER SYSTEM INCLUDING TEMPERATURE CONDITIONING PLATE

      
Application Number EP2023053297
Publication Number 2023/169766
Status In Force
Filing Date 2023-02-10
Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Yu, Dongchi
  • Lin, Jun-Li
  • Fu, Shao-Wei
  • Lin, Yi-Chen
  • Fan, Hongbo

Abstract

A vacuum chamber system comprises a supporting structure configured to support an object to be thermally stabilized, a plate, having a first surface facing the object, positioned such that the first surface is located within a predetermined distance from the object when the object is placed on the supporting structure, the plate being thermally coupled to a heat conduction source, and a chamber enclosing the supporting structure and the plate.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

25.

ANISOTROPIC RESIST PATTERNING

      
Application Number EP2023054045
Publication Number 2023/169802
Status In Force
Filing Date 2023-02-17
Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Venugopalan, Syam, Parayil
  • Ravichandran, Arvind
  • Batistakis, Chrysostomos

Abstract

Disclosed herein is a substrate support arrangement suitable for an EUV exposure process, the substrate support arrangement comprising: a substrate support arranged to support a substrate; and a power supply arrangement configured to generate an alternating electric field in the substrate when the substrate is illuminated by a EUV radiation.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/26 - Processing photosensitive materials; Apparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

26.

METHOD FOR CORRECTING MEASUREMENTS IN THE MANUFACTURE OF INTEGRATED CIRCUITS AND ASSOCIATED APPARATUSES

      
Application Number EP2023054352
Publication Number 2023/169818
Status In Force
Filing Date 2023-02-22
Publication Date 2023-09-14
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Nienhuys, Han-Kwang
  • Tripodi, Lorenzo
  • Cramer, Hugo, Augustinus, Joseph
  • Edward, Stephen

Abstract

Disclosed is a method of correcting a measured spectrum for the effects of a source spectrum resulting from an illumination source. The method comprises obtaining a measured spectrum in terms of a measurement parameter, the measured spectrum being obtained from captured diffracted radiation from a periodic structure following illumination of said periodic structure using source radiation from said illumination source, the periodic structure being the spectrometer grating and an object being measured; determining an estimate of the source spectrum from the measured spectrum; and correcting the measured spectrum using the estimate of the source spectrum.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G01N 21/25 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/956 - Inspecting patterns on the surface of objects

27.

METHOD FOR DETERMINING STOCHASTIC VARIATION ASSOCIATED WITH DESIRED PATTERN

      
Application Number 18138383
Status Pending
Filing Date 2023-04-24
First Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Fu, Jiyou

Abstract

A method for determining stochastic edge placement error associated with a pattern. The method includes acquiring, via a metrology tool, a plurality of images of the pattern at a defined location on the substrate without performing a substrate alignment therebetween; and generating at least two data: (i) first data associated with the pattern using a first set of images of the plurality of images, and (ii) second data associated with the pattern using a second set of images of the plurality of images. The first set of images and the second set of images include at least one different image. The method further includes determining (e.g., via a decomposition algorithm), using the first data and the second data associated with the pattern at the defined location, the stochastic edge placement error associated with the pattern.

IPC Classes  ?

28.

VIBRATION ISOLATOR FOR SUPPORTING A PAYLOAD

      
Application Number 18178088
Status Pending
Filing Date 2023-03-03
First Publication Date 2023-09-07
Owner
  • Carl Zeiss SMT GmbH (Germany)
  • ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Lankvelt, Alexander Petrus Josephus
  • Vervoordeldonk, Michiel
  • Kagan, Pavel
  • Van Der Wijst, Marc Wilhelmus Maria
  • Turkbey, Galip Tuna
  • Huiskamp, Marco
  • Schoenhoff, Ulrich

Abstract

A vibration isolator (10; 210) for supporting a payload and isolating the payload from vibrations has a contact member (12) configured for supporting the payload, at least two pressurized gas compartments (24) arranged offset from each other to support the contact member at different locations, which pressurized gas compartments are connected to each other via a tubing system (54). The tubing system contains at least one restriction (66) at which a cross section of the tubing system is reduced by at least 50%.

IPC Classes  ?

  • F16F 9/04 - Springs, vibration-dampers, shock-absorbers, or similarly-constructed movement-dampers using a fluid or the equivalent as damping medium using gas only in a chamber with a flexible wall
  • F16F 15/027 - Suppression of vibrations of non-rotating, e.g. reciprocating, systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating system using fluid means comprising control arrangements

29.

METHOD OF PERFORMING METROLOGY, METHOD OF TRAINING A MACHINE LEARNING MODEL, METHOD OF PROVIDING A LAYER COMPRISING A TWO-DIMENSIONAL MATERIAL, METROLOGY APPARATUS

      
Application Number 18023708
Status Pending
Filing Date 2021-08-17
First Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kurganova, Evgenia
  • Scotuzzi, Marijke
  • Faramarzi, Vina
  • Van Den Broek, Bastiaan Maurice

Abstract

Methods of performing metrology. In one arrangement a substrate has a layer. The layer comprises a two-dimensional material. A target portion of the layer is illuminated with a beam of radiation and a distribution of radiation in a pupil plane is detected to obtain measurement data. The measurement data is processed to obtain metrology information about the target portion of the layer. The illuminating, detecting and processing are performed for plural different target portions of the layer to obtain metrology information for the plural target portions of the layer.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/20 - Exposure; Apparatus therefor

30.

INSPECTION APPARATUS, LINEARLY MOVABLE BEAM DISPLACER, AND METHOD

      
Application Number EP2023054116
Publication Number 2023/165823
Status In Force
Filing Date 2023-02-17
Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Cappelli, Douglas, C.
  • Zijp, Ferry
  • Lomans, Bram, Antonius, Gerardus
  • Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus

Abstract

An inspection apparatus includes a radiation source, an optical system, and a detector. The radiation source is configured to generate a beam of radiation. The optical system is configured to receive and direct the beam along an optical axis and toward a target so as to produce scattered radiation from the target. The optical system includes a beam displacer. The beam displacer includes two or more reflective surfaces. The beam displacer is configured to receive the beam along the optical axis, perform reflections of the beam so as to displace the optical axis of the beam, move linearly in at least a first dimension to shift the displaced optical axis, and preserve an optical property of the beam such that the optical property is invariant to the linear movement. The detector is configured to receive the scattered radiation and to generate a measurement signal based on the scattered radiation.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G01N 21/956 - Inspecting patterns on the surface of objects
  • G02B 17/00 - Systems with reflecting surfaces, with or without refracting elements
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

31.

RETICLE STAGE

      
Application Number EP2023054221
Publication Number 2023/165837
Status In Force
Filing Date 2023-02-20
Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van De Kerkhof, Marcus, Adrianus
  • Bustraan, Krijn, Frederik

Abstract

A reticle stage for a lithographic apparatus is disclosed. The reticle stage comprises a support for a reflective reticle, and at least one shielding element coupled to the support. The at least one shielding element is selectively configurable between a first position for shielding a portion of a patterned side of the reflective reticle from a radiation beam, and a second position for exposing the portion. An EUV lithography apparatus and a corresponding method of operating an EUV lithographic apparatus is also disclosed.

IPC Classes  ?

32.

MODE CONTROL OF PHOTONIC CRYSTAL FIBER BASED BROADBAND RADIATION SOURCES

      
Application Number 18196108
Status Pending
Filing Date 2023-05-11
First Publication Date 2023-09-07
Owner
  • ASML NETHERLANDS B.V. (Netherlands)
  • ASML HOLDING N.V. (Netherlands)
Inventor
  • Bauerschmidt, Sebastian Thomas
  • Götz, Peter Maximilian
  • Uebel, Patrick Sebastian
  • Hugers, Ronald Franciscus Herman
  • Boer, Jan Adrianus
  • Bos, Edwin Johannes Cornelis
  • Brouns, Andreas Johannes Antonius
  • Prosyentsov, Vitaliy
  • Scholtes - Van Eijk, Paul William
  • Teunissen, Paulus Antonius Andreas
  • Ajgaonkar, Mahesh Upendra

Abstract

A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G02B 1/00 - Optical elements characterised by the material of which they are made; Optical coatings for optical elements
  • G02B 6/02 - Optical fibres with cladding
  • G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
  • G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
  • G01M 11/00 - Testing of optical apparatus; Testing structures by optical methods not otherwise provided for

33.

ROBUST FLUID COUPLING APPARATUS

      
Application Number 18010312
Status Pending
Filing Date 2021-07-13
First Publication Date 2023-09-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Sams, Benjamin Andrew
  • Trees, Dietmar Uwe Herbert
  • Telkar, Vikas Giridhar
  • Ershov, Alexander Igorevich
  • Driessen, Theodorus Wilhelmus
  • Kincal, Serkan

Abstract

A target material supply apparatus includes: first and second fluid flow components (1122, 1126) that define an axial flow path when joined together, in which the axial flow path is between a source of target material fluid and a nozzle supply apparatus; and a coupling apparatus configured to seal the joint between the first and second fluid flow components. The coupling apparatus includes a gasket (1105) having an annular shape defining an inner opening that is a part of the axial flow path when seated and sealed. When the gasket is seated between the first and second fluid flow components to thereby seal the joint formed by attaching the first and second fluid flow components, pressure applied to the gasket from target material fluid traversing the gasket inner opening along the axial flow path improves the hermetic function of the seal at the joint. Optionally, a functional insert like e.g. a flow restrictor (1160) can be seated in the gasket.

IPC Classes  ?

  • F16L 17/02 - Joints with packing adapted to sealing by fluid pressure with sealing rings arranged between outer surface of pipe and inner surface of sleeve or socket

34.

A FABRICATION PROCESS DEVIATION DETERMINATION METHOD, CALIBRATION METHOD, INSPECTION TOOL, FABRICATION SYSTEM AND A SAMPLE

      
Application Number 18016773
Status Pending
Filing Date 2021-06-29
First Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Hasan, Shakeeb Bin
  • Kumar, Nitish

Abstract

A method for determining deviations in a fabrication process, the method including: providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range; illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range; detecting light reflected and/or scattered from the layer of the sample; and determining deviations in the fabrication process from the detected light.

IPC Classes  ?

35.

SYSTEM AND METHOD FOR ALIGNING ELECTRON BEAMS IN MULTI-BEAM INSPECTION APPARATUS

      
Application Number 18111503
Status Pending
Filing Date 2023-02-17
First Publication Date 2023-09-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Hu, Xuerang
  • Luo, Xinan
  • Xi, Qingpo
  • Liu, Xuedong
  • Ren, Weiming

Abstract

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved alignment mechanism is disclosed. An improved charged particle beam inspection apparatus may include a second electron detection device to generate one or more images of one or more beam spots of the plurality of secondary electron beams during the alignment mode. The beam spot image may be used to determine the alignment characteristics of one or more of the plurality of secondary electron beams and adjust a configuration of a secondary electron projection system.

IPC Classes  ?

  • G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/32 - Gas-filled discharge tubes

36.

APERTURE PATTERNS FOR DEFINING MULTI-BEAMS

      
Application Number 18134020
Status Pending
Filing Date 2023-04-12
First Publication Date 2023-09-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

Disclosed herein is an aperture array configured to define sub-beams that are scanned in a scanning direction in a charged particle apparatus, the aperture array comprising a plurality of apertures arranged in an aperture pattern that comprises: a plurality of parallel aperture rows, wherein apertures are arranged along the aperture rows and the aperture rows are inclined relative to the scanning direction; an edge aperture row defining an edge of the aperture pattern; and an adjacent aperture row adjacent the edge row; wherein the edge aperture row and the adjacent aperture row each comprise fewer apertures than another aperture row of the aperture pattern.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/12 - Lenses electrostatic

37.

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

      
Application Number 18158444
Status Pending
Filing Date 2023-01-23
First Publication Date 2023-09-07
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ren, Weiming
  • Liu, Xuedong
  • Hu, Xuerang
  • Chen, Zhongwei

Abstract

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/06 - Electron sources; Electron guns
  • H01J 37/10 - Lenses

38.

SUPPORT TABLE FOR A LITHOGRAPHIC APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD

      
Application Number 18316262
Status Pending
Filing Date 2023-05-12
First Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kunnen, Johan Gertrudis Cornelis
  • Houben, Martijn
  • Laurent, Thibault Simon Mathieu
  • Van Abeelen, Hendrikus Johannes Marinus
  • Dassen, Armand Rosa Jozef
  • Derks, Sander Catharina Reinier

Abstract

A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

39.

APPARATUS AND METHODS FOR FILTERING MEASUREMENT RADIATION

      
Application Number EP2023052793
Publication Number 2023/165783
Status In Force
Filing Date 2023-02-06
Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Reinink, Johan
  • Donders, Sjoerd, Nicolaas, Lambertus
  • Porter, Christina, Lynn
  • Coenen, Teis, Johan
  • Deurloo, Jos, Henders, Bastiaan

Abstract

An apparatus for measuring a parameter of a structure related to a semiconductor manufacturing process. The apparatus comprises a source assembly configured to provide measurement radiation having one or more first wavelengths for irradiating the structure on a substrate. The apparatus further comprises a filter arranged to receive scattered measurement radiation that has scattered from the structure, wherein the filter is configured to transmit the scattered measurement radiation at the one or more first wavelengths and filter out radiation at one or more second wavelengths. The filter comprises a film with a curvature in at least one direction. The apparatus further comprises a plurality of detectors, located downstream of the filter, configured to detect the filtered scattered radiation configured to measure the parameter of the structure.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G01N 21/956 - Inspecting patterns on the surface of objects
  • G02F 1/35 - Non-linear optics
  • G02F 1/365 - Non-linear optics in an optical waveguide structure
  • G01N 21/84 - Systems specially adapted for particular applications

40.

IMAGE ANALYSIS BASED ON ADAPTIVE WEIGHTING OF TEMPLATE CONTOURS

      
Application Number EP2023054118
Publication Number 2023/165824
Status In Force
Filing Date 2023-02-17
Publication Date 2023-09-07
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Jiyou, Fu

Abstract

A method of characterizing features of an image is described. The method comprises accessing a template contour that corresponds to a set of contour points extracted from the image. The method comprises comparing the template contour and the extracted contour points based on a plurality of distances between locations on the template contour and the extracted contour points. The plurality of distances is weighted based on the locations on the template contour and overlap of the locations on the template contour with a blocking structure in the image. The method comprises, determining, based on the comparison, a matching geometry and/or a matching position of the template contour with the extracted contour points from the image.

IPC Classes  ?

  • G06T 7/00 - Image analysis
  • G06T 7/12 - Edge-based segmentation
  • G06V 10/44 - Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components

41.

LITHOGRAPHIC APPARATUS AND METHOD

      
Application Number 18300094
Status Pending
Filing Date 2023-04-13
First Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ten Kate, Nicolaas
  • Ottens, Joost Jeroen
  • Knarren, Bastiaan Andreas Wilhelmus Hubertus
  • Voogd, Robbert Jan
  • Nino, Giovanni Francisco
  • Remie, Marinus Jan
  • Jacobs, Johannes Henricus Wilhelmus
  • Laurent, Thibault Simon Mathieu
  • Kunnen, Johan Gertrudis Cornelis

Abstract

A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

42.

METHOD FOR ADJUSTING A PATTERNING PROCESS

      
Application Number 18012222
Status Pending
Filing Date 2021-06-14
First Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Khedekar, Satej Subhash
  • Castelijns, Henricus Jozef
  • Gantapara, Anjan Prasad
  • Bond, Stephen Henry
  • Mossavat, Seyed Iman
  • Ypma, Alexander
  • Dicker, Gerald
  • Steinmeier, Ewout Klaas
  • Guo, Chaoqun
  • Lin, Chenxi
  • Chen, Hongwei
  • Li, Zhaoze
  • Zhang, Youping
  • Zou, Yi
  • Van Berkel, Koos
  • Bolder, Joost Johan
  • Hubaux, Arnaud
  • Hlod, Andriy Vasyliovich
  • Gonzalez Huesca, Juan Manuel
  • Aarden, Frans Bernard

Abstract

Generating a control output for a patterning process is described. A control input is received. The control input is for controlling the patterning process. The control input includes one or more parameters used in the patterning process. The control output is generated with a trained machine learning mod& based on the control input, The machine learning model is trained with training data generated from simulation of the patterning process and/or actual process data, The training data includes 1) a plurality of training control inputs corresponding to a plurality of operational conditions of the patterning process, where the plurality of operational conditions of the patterning process are associated with operational condition specific behavior of the patterning process over time, and 2) training control outputs generated using a physical model based on the training control inputs.

IPC Classes  ?

43.

A METHOD AND APPARATUS FOR CALCULATING A SPATIAL MAP ASSOCIATED WITH A COMPONENT

      
Application Number 18016226
Status Pending
Filing Date 2021-06-17
First Publication Date 2023-08-31
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Schneiders, Mauritius Gerardus Elisabeth
  • Van Berkel, Koos
  • Jin, Wenjie

Abstract

A method for calculating a spatial map associated with a component, the spatial map indicating spatial variations of thermal expansion parameters in the component, the method comprising: providing or determining a temperature distribution in the component as a function of time; calculating the spatial map associated with the component using the provided or determined temperature distribution in the component and optical measurements of a radiation beam that has interacted directly or indirectly with the component, the optical measurements being time synchronized with the provided or determined temperature distribution in the component.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06F 17/12 - Simultaneous equations

44.

PELLICLES AND MEMBRANES FOR USE IN A LITHOGRAPHIC APPARATUS

      
Application Number EP2023050495
Publication Number 2023/160896
Status In Force
Filing Date 2023-01-10
Publication Date 2023-08-31
Owner
  • UNIVERSITEIT TWENTE (Netherlands)
  • ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Houweling, Zomer, Silvester
  • Pushkarev, Roman
  • Van De Kruijs, Robbert, Wilhelmus, Elisabeth
  • Ackermann, Marcel, David

Abstract

First and second novel membranes for use in a lithographic apparatus are disclosed. The first membrane comprises a core substrate and a metal silicate layer. The metal silicate layer is an outermost layer of the first membrane. The second membrane comprises a core substrate and an yttrium silicate layer. The yttrium silicate layer may be an outermost layer of the membrane or, alternatively, the yttrium silicate layer may be disposed between the core substrate and a layer of yttrium or yttrium oxide. The first and second membranes may be provided within an EUV lithographic apparatus. For example, the membranes may form part of a pellicle. The pellicle may be suitable for use adjacent to a reticle within an EUV lithographic apparatus. Alternatively, the membranes may form part of a dynamic gas lock. Alternatively, the membranes may form part of a spectral filter.

IPC Classes  ?

  • G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
  • G03F 7/20 - Exposure; Apparatus therefor

45.

METHOD AND APPARATUS FOR REFLECTING PULSED RADIATION

      
Application Number EP2023051594
Publication Number 2023/160924
Status In Force
Filing Date 2023-01-23
Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Hugers, Ronald, Franciscus, Herman
  • Brouns, Andreas, Johannes, Antonius

Abstract

Disclosed is an optical arrangement for reflecting pulsed radiation, comprising: an optical retarder and optical reflector. The optical retarder comprises a first axis coinciding with a first linear polarization state and a second axis, orthogonal to the first axis, coinciding with a second linear polarization state. The optical retarder decomposes each pulse of the pulsed radiation into a first pulse component having the first linear polarization state and a second pulse component having the second polarization state and imposes a temporal delay between the first pulse component and the second pulse component of each pulse. The optical reflector comprises an axis of rotation at an angle having a magnitude of substantially 45 degrees with respect to each of the first axis and second axis of the optical retarder, the optical reflector being configured to at least partially reflect the first pulse component and the second pulse component of each pulse.

IPC Classes  ?

46.

SYSTEM AND METHOD FOR SCANNING A SAMPLE USING MULTI-BEAM INSPECTION APPARATUS

      
Application Number 17901767
Status Pending
Filing Date 2022-09-01
First Publication Date 2023-08-31
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Maassen, Martinus Gerardus, Maria, Johannes
  • Ottens, Joost Jeroen
  • Ma, Long
  • Jiang, Youfei
  • Yin, Weihua
  • Li, Wei-Te
  • Liu, Xuedong

Abstract

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein N is an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

IPC Classes  ?

  • H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

47.

METHOD FOR GENERATING BROADBAND RADIATION AND ASSOCIATED BROADBAND SOURCE AND METROLOGY DEVICE

      
Application Number 18014724
Status Pending
Filing Date 2021-07-06
First Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Ni, Yongfeng

Abstract

A method of generating broadband output radiation and associated broadband radiation source. The method includes generating pulses of input radiation having a duration between 50fs and 400fs and having a rise time of less than 60fs; and exciting a working medium within a hollow core fiber with the pulses of input radiation.

IPC Classes  ?

  • G02F 1/365 - Non-linear optics in an optical waveguide structure
  • G02F 1/355 - Non-linear optics characterised by the materials used
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

48.

SYSTEMS, PRODUCTS, AND METHODS FOR IMAGE-BASED PATTERN SELECTION

      
Application Number 18018034
Status Pending
Filing Date 2021-07-29
First Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Sun, Rencheng
  • Jia, Qi
  • Liu, Meng
  • Hu, Weixuan
  • Wuu, Jen-Yi
  • Chen, Hao

Abstract

A method for selecting patterns for training a model to predict patterns to be printed on a substrate. The method includes (a) obtaining images of multiple patterns, wherein the multiple patterns correspond to target patterns to be printed on a substrate; (b) grouping the images into a group of special patterns and multiple groups of main patterns; and (c) outputting a set of patterns based on the images as training data for training the model, wherein the set of patterns includes the group of special patterns and a representative main pattern from each group of main patterns.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06N 20/00 - Machine learning
  • G05B 19/4099 - Surface or curve machining, making 3D objects, e.g. desktop manufacturing

49.

METROLOGY APPARATUS AND METHOD FOR DETERMINING A CHARACTERISTIC OF ONE OR MORE STRUCTURES ON A SUBSTRATE

      
Application Number 18143825
Status Pending
Filing Date 2023-05-05
First Publication Date 2023-08-31
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Tinnemans, Patricius Aloysius Jacobus
  • Warnaar, Patrick
  • Tenner, Vasco Tomas
  • Van Der Schaar, Maurits

Abstract

Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

IPC Classes  ?

50.

SYSTEMS AND METHODS FOR CLEANING A PORTION OF A LITHOGRAPHY APPARATUS

      
Application Number EP2023051596
Publication Number 2023/160925
Status In Force
Filing Date 2023-01-24
Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Uitterdijk, Tammo
  • Baheti, Ankur, Ramesh
  • Schroeck, Christopher

Abstract

A system for cleaning contamination particles from a clamp of a lithography apparatus is described. The system includes a body configured to be inserted into the lithography apparatus, engaged by a tool handler of the lithography apparatus, and positioned by the tool handler for clamping by the clamp. Cleaning features are patterned on a clamp facing surface of the body. Locations and dimensions of the cleaning features on the clamp facing surface approximate locations and dimensions of the contamination particles on the clamp, such that relative movement between the cleaning features and the clamp cleans the contamination particles from the clamp. For example, the locations of the cleaning features on the clamp facing surface correspond to reticle contact areas (e.g., burls) on the clamp where the contamination particles are located. The dimensions of the cleaning features comprise a specific pitch, a line width, and a thickness.

IPC Classes  ?

51.

INSPECTION TOOL AND BARRIER FOR USE THEREIN

      
Application Number EP2023051867
Publication Number 2023/160935
Status In Force
Filing Date 2023-01-26
Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Klein, Alexander, Ludwig
  • Van Der Woord, Ties, Wouter

Abstract

A sample inspection tool is described. The inspection tool includes a light source configured to produce effective inspection radiation below 200nm, a sample holder, an imaging sub-system containing sub-system components that delivers light along an optical path from the light source to a sample to be held by the sample holder, and a barrier positioned between the last sub-system component in the optical path and the sample to be held by the sample holder. The barrier permits the radiation to pass therethrough while inhibiting impurities from reaching the sample to be held by the sample holder. In another embodiment, a barrier is provided for use in an inspection tool.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G01N 21/15 - Preventing contamination of the components of the optical system or obstruction of the light path
  • G01N 21/956 - Inspecting patterns on the surface of objects

52.

BEAM MANIPULATION USING CHARGE REGULATOR IN A CHARGED PARTICLE SYSTEM

      
Application Number EP2023052248
Publication Number 2023/160959
Status In Force
Filing Date 2023-01-31
Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ye, Ning
  • Zhang, Jian
  • Dong, Zhonghua
  • Zhang, Datong

Abstract

A system and a method for controlling a beam spot of an Advanced Charge Controller module in an electron beam system. The Advanced Charge Controller module includes a MEMS minor configured to steer and shape the beam in order to perform beam alignment, increase the power density at an area of interest and modulate the power density in real time.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details

53.

HEIGHT MEASUREMENT SENSOR

      
Application Number EP2023052368
Publication Number 2023/160972
Status In Force
Filing Date 2023-02-01
Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Popinciuc, Mihaita
  • Martinsson, Thomas, Per, Krister

Abstract

A height measurement sensor comprising projection and detection units. The projection unit comprises a radiation source and a projection grating comprising a projection grating spot having a plurality of grating lines, the projection grating arranged to receive radiation and output a radiation beam onto the surface to create a radiation spot. The detection unit comprises: a detection grating comprising a detection grating spot having a plurality of grating lines; a detector arranged to receive a reflected radiation beam comprising radiation from the radiation spot after passing through the detection grating spot; and a controller configured to (i) obtain a detector output signal comprising a plurality of periodic components; (ii) take a derivative of two points at different locations of the output signal, wherein the two points are separated by a period of the periodic components, and (iii) determine a focus plane of the sensor when the derivative changes sign.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

54.

METHODS AND SYSTEMS FOR IMPROVING WAFER DEFECT CLASSIFICATION NUISANCE RATE

      
Application Number EP2023052663
Publication Number 2023/160986
Status In Force
Filing Date 2023-02-03
Publication Date 2023-08-31
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Lei, Hairong
  • Dong, Qian
  • Teh, Cho, Huak
  • Pu, Lingling
  • Jen, Chih-Yu
  • Lin, Chia Wen

Abstract

An automatic defect classification method may include obtaining a set of image data comprising a set of candidate defects from an inspection tool, developing a plurality of defect review types and a plurality of nuisance review types, and classifying the set of candidate defects according to the defect review types and nuisance review types using a machine learning classifier. Using the plurality of nuisance review types in the classification method reduces a nuisance rate.

IPC Classes  ?

  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G06T 7/00 - Image analysis
  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]

55.

SYSTEMS AND METHODS FOR LASER-TO-DROPLET ALIGNMENT

      
Application Number 18010251
Status Pending
Filing Date 2021-06-08
First Publication Date 2023-08-24
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Haghi, Poorya
  • Mcgrogan, Sean W.
  • Jacques, Robert N.
  • Riggs, Daniel Jason
  • Matthes, Liane Manuela

Abstract

Systems, apparatuses, and methods are provided for steering aligning a laser beam and a fuel target. An example method can include generating, at a first rate, first sensing data indicative of a first overlap between a fuel target and a laser beam. The example method can further include generating, at a second rate, second sensing data indicative of a second overlap between the fuel target and the laser beam. The method can further include generating, at a third rate, and based on the first sensing data and the second sensing data, a steering control signal configured to steer the laser beam or the fuel target. In some aspects, the second rate can be different from the first rate, and the third rate can be about equal to the first rate. In other aspects, the first rate and the second rate can be about equal to the third rate.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
  • G03F 7/20 - Exposure; Apparatus therefor

56.

APPARATUS AND METHOD FOR SELECTING INFORMATIVE PATTERNS FOR TRAINING MACHINE LEARNING MODELS

      
Application Number 18015313
Status Pending
Filing Date 2021-07-29
First Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Middlebrooks, Scott Anderson
  • Pisarenco, Maxim
  • Van Kraaij, Markus Gerardus Martinus Maria
  • Verschuren, Coen Adrianus

Abstract

A method and apparatus for selecting patterns from an image such as a design layout. The method includes obtaining an image (e.g., of a target layout) having a plurality of patterns; determining, based on pixel intensities within the image, a metric (e.g., entropy) indicative of an amount of information contained in one or more portions of the image; and selecting, based on the metric, a sub-set of the plurality of patterns from the one or more portions of the image having values of the metric within a specified range. The sub-set of patterns can be provided as training data for training a model associated with a patterning process.

IPC Classes  ?

  • G06V 10/774 - Generating sets of training patterns; Bootstrap methods, e.g. bagging or boosting
  • G06N 3/0464 - Convolutional networks [CNN, ConvNet]
  • G06V 10/50 - Extraction of image or video features by summing image-intensity values; Projection analysis

57.

A SUPERCONTINUUM RADIATION SOURCE AND ASSOCIATED METROLOGY DEVICES

      
Application Number EP2023051569
Publication Number 2023/156149
Status In Force
Filing Date 2023-01-23
Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Ni, Yongfeng

Abstract

Disclosed is a supercontinuum radiation source comprising a pump laser arrangement for generating pump radiation and comprising a plurality of pump laser heads; a radiation combiner for combining the respective pump radiation from each pump laser head, and a non-linear fiber for receiving said pump radiation so as to excite a working medium within the non-linear fiber to generate said supercontinuum radiation. Each 5 pump laser head has dimensions no greater than 5cm in any direction. Alternatively, or in addition the supercontinuum radiation source further comprises a control arrangement for controlling the pump laser arrangement, said control arrangement being configured for non-simultaneous emission of pulses from each pump laser head.

IPC Classes  ?

  • H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
  • H01S 3/23 - Arrangement of two or more lasers not provided for in groups , e.g. tandem arrangement of separate active media
  • H01S 3/06 - Construction or shape of active medium
  • G02F 1/35 - Non-linear optics
  • G02B 6/02 - Optical fibres with cladding
  • G03F 7/20 - Exposure; Apparatus therefor
  • H01S 5/42 - Arrays of surface emitting lasers
  • H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
  • G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
  • G02F 1/365 - Non-linear optics in an optical waveguide structure

58.

FIELD OF VIEW SELECTION FOR METROLOGY ASSOCIATED WITH SEMICONDUCTOR MANUFACTURING

      
Application Number EP2023052215
Publication Number 2023/156182
Status In Force
Filing Date 2023-01-31
Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Fang, Tsung-Pao
  • Chen, Been-Der
  • Lin, Wei-Yin
  • Yan, Fei
  • Liu, Meng
  • Sun, Rencheng

Abstract

Selecting one or more lists (700; 702) of fields of view (704-712) of a pattern layout for scanning electron microscope measurement and/or other inspection is described. A set of candidate fields of view is determined based on pattern groups (720-732) of a pattern layout and constraints on characteristics of a given field of view. The characteristics of a given field of view comprise a distance from the given field of view to another field of view and/or a size of the given field of view. The one or more lists of the fields of view are selected from the set of candidate fields of view according to prescribed criteria for combinations of fields of view included in the one or more lists. The prescribed criteria causes inclusion of an optimally diverse group of patterns in a predetermined number of lists of fields of view.

IPC Classes  ?

  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • G03F 7/20 - Exposure; Apparatus therefor

59.

RESIST COMPOSITIONS

      
Application Number EP2023053291
Publication Number 2023/156297
Status In Force
Filing Date 2023-02-10
Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Oyarzun Rivera, Bernardo, Andres
  • Van Kessel, Lucas, Cornelis, Peter, Maria

Abstract

There is provided a metal oxide photoresist composition comprising electron scavenger particles selected to scavenge electrons having electron kinetic energies of 20 eV or less. Also provided is a method of improving the performance of a metal oxide photoresist, the method including providing one or more electron scavengers selected to scavenge electron having electron kinetic energies of 20 eV or less in the metal oxide photoresist. Further provided is the use of such a composition or method in a lithographic apparatus or process.

IPC Classes  ?

60.

MONOLITHIC PARTICLE INSPECTION DEVICE

      
Application Number 18012801
Status Pending
Filing Date 2021-06-09
First Publication Date 2023-08-24
Owner
  • ASML Netherlands B.V. (Netherlands)
  • ASML Holding N.V. (Netherlands)
Inventor
  • Van Weperen, Ilse
  • Beukman, Arjan Johannes Anton
  • Swillam, Mohamed
  • Kreuzer, Justin Lloyd
  • Roux, Stephen

Abstract

Systems, apparatuses, and methods are provided for detecting a particle on a substrate surface. An example method can include receiving, by a grating structure, coherent radiation from a radiation source. The method can further include generating, by the grating structure, a focused coherent radiation beam based on the coherent radiation. The method can further include transmitting, by the grating structure, the focused coherent radiation beam toward a region of a surface of a substrate. The method can further include receiving, by the grating structure, photons scattered from the region in response to illuminating the region with the focused coherent radiation beam. The method can further include measuring, by a photodetector, the photons received by the grating structure. The method can further include generating, by the photodetector and based on the measured photons, an electronic signal for detecting a particle located in the region of the surface of the substrate.

IPC Classes  ?

  • G01N 21/956 - Inspecting patterns on the surface of objects

61.

LITHOGRAPHIC APPARATUS

      
Application Number 18123620
Status Pending
Filing Date 2023-03-20
First Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Butler, Hans
  • Van Der Pasch, Engelbertus Antonius Fransiscus
  • De Wit, Paul Corné Henri

Abstract

A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

62.

SYSTEMS AND METHODS FOR DEFECT LOCATION BINNING IN CHARGED-PARTICLE SYSTEMS

      
Application Number EP2023051286
Publication Number 2023/156125
Status In Force
Filing Date 2023-01-19
Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jin, Shengcheng
  • Guo, Yunbo
  • Zhang, Chen

Abstract

Apparatuses, systems, and methods for providing beams for defect detection and defect location binning associated with a sample of charged particle beam systems. A method of image analysis may include obtaining an image of a sample, identifying a feature captured in the image of the sample, generating a template image from a design layout of the identified feature, comparing the image of the sample with the template image, and processing the image based on the comparison. In some embodiments, a method of image analysis may include obtaining an image of a sample, identifying a feature captured in the obtained image of the sample, mapping the obtained image to a template image generated from a design layout of the identified feature, and analyzing the image based on the mapping.

IPC Classes  ?

63.

METHODS OF METROLOGY

      
Application Number EP2023051522
Publication Number 2023/156143
Status In Force
Filing Date 2023-01-23
Publication Date 2023-08-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Batistakis, Chrysostomos
  • Zhang, Huaichen
  • Pisarenco, Maxim
  • Bastani, Vahid
  • Nechaev, Konstantin
  • Anunciado, Roy
  • Van Der Sanden, Stefan, Cornelis, Theodorus

Abstract

Disclosed is a method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method comprises: obtaining layout data relating to a layout of a pattern to be applied to said structure, said pattern comprising said at least one structure; and obtaining a trained model, having been trained on metrology data and said layout data to infer a value and/or probability metric relating to a parameter of interest from at least said layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate. A value and/or probability metric is determined relating to the parameter of interest at one or more locations on the substrate different from said measurement locations from at least layout data using said trained model.

IPC Classes  ?

64.

METHOD OF DETERMINING A CORRECTION STRATEGY IN A SEMICONDUCTOR MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES

      
Application Number 18014431
Status Pending
Filing Date 2021-06-21
First Publication Date 2023-08-17
Owner ASML NETHERLANDS B. V. (Netherlands)
Inventor
  • Hlod, Andriy Vasyliovich
  • Hubaux, Arnaud

Abstract

A method of determining a correction strategy in a semiconductor manufacturing process. The method can include obtaining functional indicator data relating to functional indicators associated with one or more process parameters of each of a plurality of different control regimes of the semiconductor manufacturing process and/or a tool associated with the semiconductor manufacturing process and using the functional indicator data as an input to a trained model to determine for which of the control regimes should a correction be determined so as to improve performance of the semiconductor manufacturing process according to at least one quality metric being representative of a quality of the semiconductor manufacturing process. The correction is then calculated for the determined control regime(s).

IPC Classes  ?

  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • G03F 7/20 - Exposure; Apparatus therefor

65.

CLAMP

      
Application Number EP2023050879
Publication Number 2023/151901
Status In Force
Filing Date 2023-01-16
Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Meissner, Torsten
  • Tralli, Aldo
  • Huang, Zhuangxiong

Abstract

A support for supporting a partial or complete clamp during manufacture of the clamp, wherein the support comprises a raised flexible element located on a top surface, the flexible element being configured to deform as a result of a gas pressure differential acting on the flexible element to create gas flow restriction between a space between the clamp and the support, and a space outside the clamp.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

66.

METROLOGY METHOD AND ASSOCIATED METROLOGY DEVICE

      
Application Number EP2023051111
Publication Number 2023/151909
Status In Force
Filing Date 2023-01-18
Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Naghibzadeh, Shahrzad
  • Javaheri, Narjes

Abstract

Disclosed is a method for determining a parameter of interest relating to at least one target on a substrate. The method comprises obtaining metrology data comprising at least one asymmetry signal, said at least one asymmetry signal comprising a difference or imbalance in a measurement parameter from the target; obtaining a trained model having been trained or configured to relate said at least one asymmetry signal to the parameter of interest, the trained model comprising at least one proxy for at least one nuisance component of the at least one asymmetry signal; and inferring said parameter of interest for said at least one target from said at least one asymmetry signal using the trained model.

IPC Classes  ?

67.

PELLICLE FRAME FOR EUV LITHOGRAPHY

      
Application Number 17920392
Status Pending
Filing Date 2021-03-25
First Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Custers, Kristof
  • De Bruijn, Ron Geeraard Catharina
  • Kruizinga, Matthias
  • Schijvenaars, Lodewijk Alexander

Abstract

A pellicle frame includes: a first portion; and a plurality of second portions. The first portion is for connection to a border of a pellicle. The first portion includes a hollow and generally rectangular body. The plurality of second portions are for connection to a patterning device. The first portion and the plurality of second portions are all formed from a first material. Each of the second portions is connected to the first portion by a spring portion formed from the first material. Such a pellicle frame is advantageous since the first portion, the plurality of second portions and the spring portions are all formed from a same material.

IPC Classes  ?

  • G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
  • G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

68.

METROLOGY METHOD AND ASSOCIATED METROLOGY AND LITHOGRAPHIC APPARATUSES

      
Application Number 18012398
Status Pending
Filing Date 2021-05-19
First Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Roy, Sarathi

Abstract

A method to determine a performance indicator indicative of alignment performance of a processed substrate. The method includes obtaining measurement data including a plurality of measured position values of alignment marks on the substrate and calculating a positional deviation between each measured position value and a respective expected position value. These positional deviations are used to determine a directional derivative between the alignment marks, and the directional derivatives are used to determine at least one directional derivative performance indicator.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes

69.

A FLUID HANDLING SYSTEM, METHOD AND LITHOGRAPHIC APPARATUS

      
Application Number 18015522
Status Pending
Filing Date 2021-06-14
First Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Rops, Cornelius Maria
  • Berendsen, Christianus Wilhelmus Johannes
  • Eummelen, Erik Henricus Egidius Catharina
  • Wismeijer, Dagmar Antoinette

Abstract

A lithographic apparatus has a substrate holder configured to hold a substrate and a projection system configured to project a radiation beam onto the substrate held by the substrate holder. There is also a fluid handling system configured to confine immersion liquid to a space between a part of the projection system and a surface of the substrate so that the radiation beam can irradiate the surface of the substrate by passing through the immersion liquid. An excitation device is provided to generate surface acoustic waves in the substrate and propagating toward the immersion liquid.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction

70.

LITHOGRAPHIC APPARATUS, METHOD FOR UNLOADING A SUBSTRATE AND METHOD FOR LOADING A SUBSTRATE

      
Application Number 18305925
Status Pending
Filing Date 2023-04-24
First Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jeunink, Andre Bernardus
  • Martens, Robby Franciscus Josephus
  • De Vos, Youssef Karel Maria
  • Van Dorst, Ringo Petrus Cornelis
  • Ten Brinke, Gerhard Albert
  • Senden, Dirk Jerome Andre
  • Baltis, Coen Hubertus Matheus
  • Gerritzen, Justin Johannes Hermanus
  • Kamminga, Jelmer Mattheüs
  • Pacitti, Evelyn Wallis
  • Poiesz, Thomas
  • Scheiberlich, Arie Cornelis
  • Scholten, Bert Dirk
  • Schreuder, André
  • Soethoudt, Abraham Alexander
  • Tromp, Siegfried Alexander
  • Van De Vijver, Yuri Johannes Gabriël

Abstract

A method for unloading a substrate from a support table configured to support the substrate, the method including: supplying gas to a gap between a base surface of the support table and the substrate via a plurality of gas flow openings in the support table, wherein during an initial phase of unloading the gas is supplied through at least one gas flow opening in an outer region of the support table and not through any gas flow opening in a central region of the support table radially inward of the outer region, and during a subsequent phase of unloading the gas is supplied through at least one gas flow opening in the outer region and at least one gas flow opening in the central region.

IPC Classes  ?

  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • B25B 11/00 - Work holders or positioners not covered by groups , e.g. magnetic work holders, vacuum work holders

71.

ACTIVE LEARNING TO IMPROVE WAFER DEFECT CLASSIFICATION

      
Application Number EP2023051231
Publication Number 2023/151919
Status In Force
Filing Date 2023-01-19
Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ilievska Alcheva, Blagorodna
  • Gkorou, Dimitra
  • Lakkad, Harshil, Jayantbhai
  • Ulucan, Artunç
  • De Wit, Robin, Theodorus, Christiaan

Abstract

Systems and methods for training a machine learning model to classify defects with utility- function-based active learning are described. In one embodiment, one or more non-transitory, machine- readable medium is configured to cause a processor to determine a utility function value for unclassified measurement images, based on a machine learning model, wherein the machine learning model is trained using a pool of labeled measurement images. Based on a determination that the utility function value for a given unclassified measurement image is less than a threshold value, the unclassified measurement image is output for classification without the use of the machine learning model. The unclassified measurement images classified via the classification without the use of the machine learning model are added to the pool of labeled measurement images. The machine learning model is trained based on the measurement images classified via the classification without the use of the machine learning model.

IPC Classes  ?

  • G06F 18/21 - Design or setup of recognition systems or techniques; Extraction of features in feature space; Blind source separation
  • G06F 18/2413 - Classification techniques relating to the classification model, e.g. parametric or non-parametric approaches based on distances to training or reference patterns
  • G06F 18/40 - Software arrangements specially adapted for pattern recognition, e.g. user interfaces or toolboxes therefor
  • G06V 10/74 - Image or video pattern matching; Proximity measures in feature spaces
  • G06V 10/762 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using clustering, e.g. of similar faces in social networks
  • G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
  • G06V 10/774 - Generating sets of training patterns; Bootstrap methods, e.g. bagging or boosting
  • G06V 20/69 - Microscopic objects, e.g. biological cells or cellular parts
  • G06T 7/00 - Image analysis
  • G06V 10/778 - Active pattern-learning, e.g. online learning of image or video features

72.

SYSTEMS AND METHODS FOR GENERATING SEM-QUALITY METROLOGY DATA FROM OPTICAL METROLOGY DATA USING MACHINE LEARNING

      
Application Number EP2023052123
Publication Number 2023/151973
Status In Force
Filing Date 2023-01-30
Publication Date 2023-08-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Alexander, Spencer
  • Ruan, Junru
  • Li, Haiyan
  • Keech, Nathan, Richard
  • Chin, Huai-Ying

Abstract

In one embodiment, one or more non-transitory, machine-readable medium has instructions thereon, the instructions when executed by a processor being configured to perform operations comprising obtaining scanning electron microscopy (SEM) metrology data for first areas on a training wafer, obtaining optical metrology data for second areas on the training wafer, and training a model, by using the SEM metrology data and the optical metrology data for the training wafer, to generate parameters for features on a production wafer based on optical metrology data for areas of the production wafer.

IPC Classes  ?

73.

SYSTEM AND METHOD FOR CONDITIONING OPTICAL APPARATUSES

      
Application Number 18015155
Status Pending
Filing Date 2021-05-31
First Publication Date 2023-08-10
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Voznyi, Oleg Viacheslavovich
  • Moest, Bearrach

Abstract

The present invention relates to a stage system (130), which comprises a pre-exposure element (134), and to a method employing the pre-exposure element for conditioning an optical system (100). The pre-exposure element comprises a radiation receiving area at a surface of the stage system, wherein the radiation receiving area comprises at least one pre-exposure plate configured to receive radiation. The stage system comprises further a controller (140), wherein the controller is capable to control an optical parameter of the pre-exposure element, herewith controlling a portion of received radiation reflected by the pre-exposure element.

IPC Classes  ?

74.

METHOD AND APPARATUS FOR CONCEPT DRIFT MITIGATION

      
Application Number 18015162
Status Pending
Filing Date 2021-07-07
First Publication Date 2023-08-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Koulierakis, Eleftherios
  • Lancia, Carlo
  • Gonzalez Huesca, Juan Manuel
  • Ypma, Alexander

Abstract

Method and apparatus for adapting a distribution model of a machine learning fabric. The distribution model is for mitigating the effect of concept drift, and is configured to provide an output as input to a functional model of the machine learning fabric. The functional model is for performing a machine learning task. The method may include obtaining a first data point, and providing the first data point as input to one or more distribution monitoring components of the distribution model. The one or more distribution monitoring components have been trained on a plurality of further data points. A metric representing a correspondence between the first data point and the plurality of further data points is determined, by at least one of the one or more distribution monitoring components. Based on the error metric, the output of the distribution model is adapted.

IPC Classes  ?

  • G06N 20/00 - Machine learning
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/20 - Exposure; Apparatus therefor

75.

INSPECTION APPARATUS, MOTORIZED APERTURES, AND METHOD BACKGROUND

      
Application Number EP2023050136
Publication Number 2023/147951
Status In Force
Filing Date 2023-01-04
Publication Date 2023-08-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Shome, Krishanu
  • Finan, Emily, Rose
  • Sobolev, Kirill, Urievich
  • Adams, Joshua
  • Rodney, Jonathan, S.
  • Lin, Yuxiang
  • Catey, Eric, Brian

Abstract

A system includes an imaging system, a spatial filter, and a detector. The system is configured to receive a plurality of diffraction orders. The spatial filter is configured to block one or more undesired diffraction orders of the plurality of diffraction orders and to pass one or more desired diffraction orders of the plurality of diffraction orders. The spatial filter includes one or more obscurations having an angular dependent radius that varies azimuthally. The detector is configured to receive and measure an intensity of the one or more desired diffraction orders. The spatial filter is motorized.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

76.

ASSEMBLY FOR A LITHOGRAPHIC APPARATUS

      
Application Number EP2023051894
Publication Number 2023/148075
Status In Force
Filing Date 2023-01-26
Publication Date 2023-08-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van De Goor, Tim, Willem, Johan
  • Galutschek, Ernst
  • Yakunin, Andrei, Mikhailovich
  • Jansen, Paul
  • Wolf, Abraham, Jan
  • Vermeulen, Paul, Alexander
  • Houweling, Zomer, Silvester
  • Heijmans, Lucas, Christiaan, Johan
  • Nikipelov, Andrey

Abstract

There is described an assembly for a lithographic apparatus, wherein the assembly is configured to heat a pellicle membrane by one of or a combination of: i) provision of heated gas, ii) radiative heating, iii) resistive heating, and iv) inductive heating, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm. Also described is a method of extending the operative lifespan of a pellicle membrane, said method including heating at least a portion of a pellicle membrane when illuminated by EUV by one of or a combination of i) providing heated gas, ii) radiative heating, iii) resistive heating, and iv) inductive heating to effect heating of the at least one portion of the pellicle membrane, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm.

IPC Classes  ?

  • G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
  • G03F 7/20 - Exposure; Apparatus therefor

77.

TRANSMISSIVE DIFFRACTION GRATING

      
Application Number 18003301
Status Pending
Filing Date 2021-06-17
First Publication Date 2023-08-10
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Chong, Derick Yun Chek
  • Engelen, Wouter Joep
  • Kachkanov, Vyacheslav
  • Mohammadi, Vahid
  • De Groot, Pieter Cristiaan

Abstract

A transmissive diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises an absorbing layer. The diffraction grating is for use with radiation having a first wavelength (for example (EUV radiation). The absorbing layer is provided with a two-dimensional array of through-apertures. The absorbing layer is formed from a material which has a refractive index for the radiation having the first wavelength in the range 0.% to 1.04.

IPC Classes  ?

78.

SUBSTRATE HOLDER, LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF MANUFACTURING A SUBSTRATE HOLDER

      
Application Number 18299534
Status Pending
Filing Date 2023-04-12
First Publication Date 2023-08-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Lafarre, Raymond Wilhelmus Louis
  • Donders, Sjoerd Nicolaas Lambertus
  • Ten Kate, Nicolaas
  • Dziomkina, Nina Vladimirovna
  • Karade, Yogesh Pramod
  • Rodenburg, Elisabeth Corinne

Abstract

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • B23K 26/354 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
  • B23K 26/342 - Build-up welding
  • B22F 10/00 - Additive manufacturing of workpieces or articles from metallic powder
  • B22F 10/20 - Direct sintering or melting
  • B23Q 3/18 - Devices holding, supporting, or positioning, work or tools, of a kind normally removable from the machine for positioning only
  • G03F 7/20 - Exposure; Apparatus therefor
  • B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
  • B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
  • B33Y 10/00 - Processes of additive manufacturing
  • B33Y 80/00 - Products made by additive manufacturing
  • B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools

79.

EUV LITHOGRAPHY SYSTEM HAVING A GAS-BINDING COMPONENT

      
Application Number EP2022086038
Publication Number 2023/147925
Status In Force
Filing Date 2022-12-15
Publication Date 2023-08-10
Owner
  • CARL ZEISS SMT GMBH (Germany)
  • ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kruithof, Wilbert
  • Yaghoobi, Parham
  • Leo, John

Abstract

The invention relates to an EUV lithography system comprising: a housing (25), in the interior (24) of which a residual gas (27) is contained; and at least one gas-binding component (29) which is arranged in the interior (24) and has a gas-binding material for binding contaminating substances (28). The gas-binding component (29) comprises at least one flow channel (33) which has at least one surface having the gas-binding material, wherein a gas flow of the residual gas (27) in the flow channel (33) has a Knudsen number of between 0.01 and 5, preferably between 0.01 and 0.5, in particular between 0.01 and 0.3, and wherein an enclosure (26) is arranged in the interior (24) of the housing (25) and encapsulates a beam path of the EUV lithography system. The enclosure (26) preferably has an opening (37) having a maintenance shaft (36) in which the gas-binding component (29) is arranged.

IPC Classes  ?

80.

METROLOGY METHOD AND ASSOCIATED METROLOGY DEVICE

      
Application Number EP2023050865
Publication Number 2023/147986
Status In Force
Filing Date 2023-01-16
Publication Date 2023-08-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Koolen, Armand, Eugene, Albert
  • Cheng, Su-Ting
  • Cramer, Hugo, Augustinus, Joseph
  • Wang, Kirsten, Jennifer, Lyhn

Abstract

Disclosed is a method of determining a value for a parameter of interest from a target on a substrate. The method comprises obtaining metrology data comprising single-wavelength parameter of interest values which were obtained using a respective different measurement wavelength; and determining said value for the parameter of interest from a stack sensitivity derived weighted combination of said single-wavelength parameter of interest values. Also disclosed is a method of selecting wavelengths for a measurement based on at least the derivative of the stack sensitivity with respect to wavelength.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

81.

LITHOGRAPHIC APPARATUS CONTROLLER SYSTEM

      
Application Number EP2023052670
Publication Number 2023/148326
Status In Force
Filing Date 2023-02-03
Publication Date 2023-08-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Roset, Bas, Johannes, Petrus

Abstract

A controller system is configured to control a plant and comprising a feedforward controller to provide, based on a reference state signal, a feedforward signal to the plant, and a feedback controller system to provide a feedback signal to the plant, based on a difference between the reference state signal and a plant state signal representing an actual state of the plant. The feedback controller system comprises an integrator, a trajectory generator, and a selector. The feedback controller system is configured to operate as a function of the reference state in a first control mode or a second control mode, wherein the feedback controller system, in the first control mode, operates the selector to select the trajectory generator output signal generated by the trajectory generator, and wherein the feedback controller system, in the second control mode, operates the selector to select the integrator output signal generated by the integrator.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G05B 19/19 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
  • G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.

82.

Lithography system, sensor and measuring method

      
Application Number 16896953
Grant Number RE049602
Status In Force
Filing Date 2020-09-02
First Publication Date 2023-08-08
Grant Date 2023-08-08
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Kruit, Pieter
  • Slot, Erwin
  • Teepen, Tijs Frans
  • Wieland, Marco Jan-Jaco
  • Steenbrink, Stijn Willem Herman Karel

Abstract

electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

IPC Classes  ?

  • H01J 3/00 - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS - Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
  • B82Y 40/00 - Manufacture or treatment of nanostructures
  • H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

83.

OBJECTIVE LENS ARRAY ASSEMBLY, ELECTRON-OPTICAL SYSTEM, ELECTRON-OPTICAL SYSTEM ARRAY, METHOD OF FOCUSING, OBJECTIVE LENS ARRANGEMENT

      
Application Number 18123210
Status Pending
Filing Date 2023-03-17
First Publication Date 2023-08-03
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

Arrangements involving objective lens array assemblies for charged-particle assessment tools are disclosed. In one arrangement, the assembly comprises an objective lens array and a control lens array. Each objective lens projects a respective sub-beam of a multi-beam onto a sample. The control lens array is associated with the objective lens array and positioned up-beam of the objective lens array. The control lenses pre-focus the sub-beams.

IPC Classes  ?

  • H01J 37/12 - Lenses electrostatic
  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

84.

OBJECT TABLE COMPRISING AN ELECTROSTATIC CLAMP

      
Application Number 18132617
Status Pending
Filing Date 2023-04-10
First Publication Date 2023-08-03
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Der Toorn, Jan-Gerard Cornelis
  • Huinck, Jeroen Gertruda Antonius
  • Severt, Han Willem Hendrik
  • Kooiker, Allard Eelco
  • Ronde, Michael Johannes Christiaan
  • Wellink, Arno Maria
  • Liu, Shibing
  • Luo, Ying
  • Wang, Yixiang
  • Chen, Chia-Yao
  • Zhu, Bohang
  • Van Soest, Jurgen

Abstract

Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

IPC Classes  ?

  • H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
  • G03F 7/20 - Exposure; Apparatus therefor

85.

HEIGHT MEASUREMENT METHOD AND HEIGHT MEASUREMENT SYSTEM

      
Application Number 18000299
Status Pending
Filing Date 2021-04-19
First Publication Date 2023-08-03
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Rogachevskiy, Andrey Valerievich
  • Knarren, Bastiaan Andreas Wilhelmus Hubertus
  • Torumba, Doru Cristian
  • Gijsbertsen, Arjan
  • Caresio, Cristina
  • Centeno, Raymund
  • Kinyanjui, Tabitha Wangari
  • Den Boer, Jan Arie

Abstract

The present invention provides a method for calculating a corrected substrate height map of a first substrate using a height level sensor. The method comprises: sampling the first substrate by means of the height level sensor with the first substrate moving with a first velocity, wherein the first velocity is a first at least partially non-constant velocity of the first substrate with respect to the height level sensor, to generate a first height level data, generating a first height map based on the first height level data, and calculating a corrected substrate height map by subtracting a correction map from the first height map, wherein the correction map is calculated from the difference between a first velocity height map and a second velocity height map.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G06T 7/246 - Analysis of motion using feature-based methods, e.g. the tracking of corners or segments
  • G01C 5/00 - Measuring height; Measuring distances transverse to line of sight; Levelling between separated points; Surveyors' levels

86.

A PELLICLE CLEANING SYSTEM

      
Application Number EP2023050198
Publication Number 2023/143887
Status In Force
Filing Date 2023-01-05
Publication Date 2023-08-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Te Sligte, Edwin
  • Klein, Alexander, Ludwig
  • Vermeulen, Paul, Alexander
  • Wolf, Abraham, Jan
  • Grisin, Ilja

Abstract

A cleaning system for cleaning a component related to a lithographic process such as a pellicle, reticle, wafer or another lithographic component, comprising at least one radiation emitter configured to, in use, irradiate a region of the component so as to cause thermomechanical vibrations in the component and/or induce sputtering of contaminants present on the component.

IPC Classes  ?

87.

SYSTEM FOR HOLDING AN OBJECT IN A SEMICONDUCTOR MANUFACTURING PROCESS, LITHOGRAPHIC APPARATUS PROVIDED WITH SAID SYSTEM AND METHOD

      
Application Number EP2023050333
Publication Number 2023/143896
Status In Force
Filing Date 2023-01-09
Publication Date 2023-08-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Donders, Sjoerd, Nicolaas, Lambertus
  • Van De Kerkhof, Marcus, Adrianus
  • Van Dongen, Paul

Abstract

The disclosure provides a system for holding an object in a semiconductor manufacturing process, the system comprising: at least one pad of dry adhesive material (100), the material having a structured surface, the surface having a structuring comprising a plurality of projections (110) each having a stem and an end face (120) facing away from the surface, said end face of the projections being adapted to grip the object (150), the system being adapted to release the object by movement of the object (150) with respect to the dry adhesive material (100) or vice versa.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

88.

SUBSTRATE TABLE, LITHOGRAPHIC APPARATUS, STICKER, COVER RING AND METHOD OF OPERATING A LITHOGRAPHIC APPARATUS

      
Application Number EP2023050502
Publication Number 2023/143909
Status In Force
Filing Date 2023-01-11
Publication Date 2023-08-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kramer, Gijs
  • Berendsen, Christianus, Wilhelmus, Johannes
  • Van Pelt, Stijn
  • Vermeulen, Marcus, Martinus, Petrus, Adrianus
  • Ravensbergen, Simon, Karel
  • Bogaart, Erik, Willem

Abstract

A substrate table, for use in an immersion lithographic apparatus, having a support area defining a support plane to support a substrate to be patterned and an upper surface surrounding the support area, wherein: the upper surface comprises an outer region that is substantially planar and a transition region proximate the support area; and the transition region is not co-planar with the outer region so as to ameliorate a level transition between the outer region and a non-standard substrate, which has a thickness different than a distance between the support plane and a nominal plane defined by the outer region.

IPC Classes  ?

89.

SYSTEMS, METHODS, AND PRODUCTS FOR DETERMINING PRINTING PROBABILITY OF ASSIST FEATURE AND ITS APPLICATION

      
Application Number 18008075
Status Pending
Filing Date 2021-06-17
First Publication Date 2023-08-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Wang, Jen-Shiang
  • Yang, Pengcheng
  • Huang, Jiao
  • Lu, Yen-Wen
  • Liu, Liang
  • Zhang, Chen

Abstract

A method for determining a likelihood that an assist feature of a mask pattern will print on a substrate. The method includes obtaining (i) a plurality of images of a pattern printed on a substrate and (ii) variance data the plurality of images of the pattern; determining, based on the variance data, a model configured to generate variance data associated with the mask pattern; and determining, based on model-generated variance data for a given mask pattern and a resist image or etch image associated with the given mask pattern, the likelihood that an assist feature of the given mask pattern will be printed on the substrate. The likelihood can be applied to adjust one or more parameters related to a patterning process or a patterning apparatus to reduce the likelihood that the assist feature will print on the substrate.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
  • G03F 7/105 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images

90.

METHOD FOR CALIBRATING A SCANNING CHARGED PARTICLE MICROSCOPE

      
Application Number 18126322
Status Pending
Filing Date 2023-03-24
First Publication Date 2023-08-03
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Dillen, Hermanus Adrianus
  • Tel, Wim Tjibbo
  • Van Mierlo, Willem Louis

Abstract

A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/22 - Optical or photographic arrangements associated with the tube

91.

METHOD FOR ADJUSTING A TARGET FEATURE IN A MODEL OF A PATTERNING PROCESS BASED ON LOCAL ELECTRIC FIELDS

      
Application Number 18129169
Status Pending
Filing Date 2023-03-31
First Publication Date 2023-08-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Haren, Richard Johannes Franciscus
  • Van Dijk, Leon Paul
  • Yildirim, Oktay
  • Mouraille, Orion Jonathan Pierre

Abstract

A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging

92.

DETERMINING PATTERN RANKING BASED ON MEASUREMENT FEEDBACK FROM PRINTED SUBSTRATE

      
Application Number 18118695
Status Pending
Filing Date 2023-03-07
First Publication Date 2023-07-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Zhang, Youping
  • Genin, Maxime Philippe Frederic
  • Wu, Cong
  • Su, Jing
  • Hu, Weixuan
  • Zou, Yi

Abstract

Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

IPC Classes  ?

93.

HIGH VOLTAGE FEEDTHROUGH AND CONNECTOR FOR A CHARGED PARTICLE APPARATUS

      
Application Number 18122601
Status Pending
Filing Date 2023-03-16
First Publication Date 2023-07-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Der Kroon, Boudewijn Weijert Herman Jan
  • Van Soest, Jurgen

Abstract

Disclosed herein is a connector for electrically connecting a feedthrough of a vacuum tool to a high voltage power source, the connector comprising: a connector wire assembly configured to be in electrical connection with a high voltage power source; and a connector insulator comprising a channel configured to extend into the connector insulator and to receive a feedthrough pin so as to electrically connect the connector wire assembly with the feedthrough pin; wherein the connector insulator is configured to engage with the feedthrough so that a boundary surface of the connector insulator extends substantially bi-directionally in the direction of the longitudinal axis of the channel.

IPC Classes  ?

  • H01R 13/52 - Dustproof, splashproof, drip-proof, waterproof, or flameproof cases
  • H01J 37/248 - Components associated with high voltage supply
  • H01J 37/18 - Vacuum locks

94.

CHARGED-PARTICLE MULTI-BEAM COLUMN, CHARGED-PARTICLE MULTI-BEAM COLUMN ARRAY, INSPECTION METHOD

      
Application Number 18150745
Status Pending
Filing Date 2023-01-05
First Publication Date 2023-07-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor Wieland, Marco Jan-Jaco

Abstract

The disclosure relates to charged-particle multi-beam columns and multi-beam column arrays. In one arrangement, a sub-beam defining aperture array forms sub-beams from a beam of charged particles. A collimator array collimates the sub-beams An objective lens array projects the collimated sub-beams onto a sample. A detector detects charged particles emitted from the sample. Each collimator is directly adjacent to one of the objective lenses. The detector is provided in a plane down-beam from the sub-beam defining aperture array.

IPC Classes  ?

  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/12 - Lenses electrostatic
  • H01J 37/244 - Detectors; Associated components or circuits therefor

95.

METHOD FOR CONTROLLING A PRODUCTION SYSTEM AND METHOD FOR THERMALLY CONTROLLING AT LEAST PART OF AN ENVIRONMENT

      
Application Number EP2022086163
Publication Number 2023/138851
Status In Force
Filing Date 2022-12-15
Publication Date 2023-07-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Jin, Wenjie

Abstract

A computer-implemented method of generating control actions for controlling a production system, such as by transmitting the control actions to a control system of the production system. The method comprises receiving, by a memory unit, a set of observation data characterizing a current state of the production system; processing, by a first neural network module of the memory unit, an input based on at least part of the observation data to generate encoded observation data; updating, by a second neural network module of the memory unit, history information stored in an internal memory of the second module using an input based on at least part of the observation data; obtaining, based on the encoded observation data and the updated history information, state data; and generating, based on the state data, one or more control actions.

IPC Classes  ?

96.

METHOD AND APPARATUS FOR ILLUMINATION ADJUSTMENT

      
Application Number EP2022088095
Publication Number 2023/138892
Status In Force
Filing Date 2022-12-30
Publication Date 2023-07-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Yoon, Changsik
  • Koolen, Armand, Eugene, Albert
  • Hoogveld, Jasper, Niko, Maria
  • Hack, Sjoerd, Arthur

Abstract

Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G01N 21/956 - Inspecting patterns on the surface of objects
  • G06T 7/00 - Image analysis
  • G01M 11/02 - Testing optical properties
  • G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,

97.

SYSTEMS AND METHODS FOR INSPECTING A PORTION OF A LITHOGRAPHY APPARATUS

      
Application Number EP2023050104
Publication Number 2023/138916
Status In Force
Filing Date 2023-01-04
Publication Date 2023-07-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Sankaran, Naveen, Kumar

Abstract

The described system comprises an inspection system and associated software. The inspection system comprises a body that is configured to be inserted into a lithography apparatus, engaged by a tool handler of the lithography apparatus, and used for inspecting a portion of the lithography apparatus. Cameras are coupled to the body, and configured to obtain images of the portion of the lithography apparatus when the body is positioned by the tool handler. The software is configured to receive the images and facilitate semi-automated or automated inspection of the portion of the lithography apparatus based on the one or more images. Compared to prior approaches, the described system requires much less time for inspection, produces consistent imaging resolution and clarity, does not require opening or other disassembly of the lithography apparatus, reduces impact on a lithography apparatus micro-environment and the potential for contamination, and has other advantages.

IPC Classes  ?

98.

A TARGET FOR MEASURING A PARAMETER OF A LITHOGRAPHIC PROCESS

      
Application Number 18001255
Status Pending
Filing Date 2021-06-08
First Publication Date 2023-07-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Der Schaar, Maurits
  • Warnaar, Patrick
  • Bijnen, Franciscus Godefridus Casper
  • Zwier, Olger Victor

Abstract

Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

99.

OBJECT HOLDER, ELECTROSTATIC SHEET AND METHOD FOR MAKING AN ELECTROSTATIC SHEET

      
Application Number 18008283
Status Pending
Filing Date 2021-06-09
First Publication Date 2023-07-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van De Ven, Bastiaan Lambertus Wilhelmus Marinus
  • Van Berkel, Koos
  • Van De Kerkhof, Marcus Adrianus
  • Hamelinck, Roger Franciscus Mattheus Maria
  • Shervin, Shahab
  • Verschuren, Marinus Augustinus Christiaan
  • Engelen, Johannes Bernardus Charles
  • Kruizinga, Matthias
  • Uitterdijk, Tammo
  • Galaktionov, Oleksiy Sergiyovich
  • Janssen, Kjeld Gertrudus Hendrikus
  • Pijnenburg, Johannes Adrianus Cornelis Maria
  • Van Delft, Peter

Abstract

An object holder configured to support an object, the object holder comprising: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers; and a circumferential barrier for reducing outflow of gas escaping from space between the object and the core body.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

100.

A DETECTOR SUBSTRATE FOR USE IN A CHARGED PARTICLE MULTI-BEAM ASSESSMENT TOOL

      
Application Number 18011838
Status Pending
Filing Date 2021-07-05
First Publication Date 2023-07-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Wieland, Marco Jan-Jaco
  • Nihtianov, Stoyan
  • Veenstra, Roy Ramon
  • Jiang, Hui

Abstract

A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

IPC Classes  ?

  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
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