ASML Netherlands B.V.

Netherlands

Back to Profile

1-100 of 6,936 for ASML Netherlands B.V. Sort by
Query
Aggregations
IP Type
        Patent 6,810
        Trademark 126
Jurisdiction
        United States 3,950
        World 2,886
        Canada 61
        Europe 39
Date
New (last 4 weeks) 83
2024 July (MTD) 40
2024 June 77
2024 May 64
2024 April 45
See more
IPC Class
G03F 7/20 - Exposure; Apparatus therefor 3,924
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically 712
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor 583
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma 500
G03B 27/42 - Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original 403
See more
NICE Class
09 - Scientific and electric apparatus and instruments 112
42 - Scientific, technological and industrial services, research and design 61
07 - Machines and machine tools 56
37 - Construction and mining; installation and repair services 27
40 - Treatment of materials; recycling, air and water treatment, 18
See more
Status
Pending 687
Registered / In Force 6,249
  1     2     3     ...     70        Next Page

1.

METROLOGY APPARATUS AND LITHOGRAPHIC APPARATUS

      
Application Number 18558910
Status Pending
Filing Date 2022-04-05
First Publication Date 2024-07-18
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Beukman, Arjan Johannes Anton
  • Akbulut, Duygu

Abstract

Disclosed is a parallel metrology sensor system comprising a reference frame and a plurality of integrated optics sensor heads, each integrated optics sensor head configured to perform an independent measurement. Each of the integrated optics sensor heads is operable to measure its position with respect to the reference frame.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

2.

SYSTEM AND METHOD FOR DISCHARGING A PATTERNING DEVICE

      
Application Number EP2023084902
Publication Number 2024/149536
Status In Force
Filing Date 2023-12-08
Publication Date 2024-07-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kvon, Vladimir
  • Heijmans, Lucas, Christiaan, Johan
  • Nikipelov, Andrey
  • Marvi, Zahra
  • Koole, Max

Abstract

Disclosed herein is a light source arranged to illuminate a non-patterning surface of a patterning device in a lithographic apparatus, wherein the light source is configured such that, in response to illumination from the light source, the non-patterning surface emits electrons due to the photoelectric effect. Advantageously, when the non-patterning surface is charged, the non-patterning surface may be discharged before it is unloaded.

IPC Classes  ?

  • G03F 1/40 - Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

3.

METROLOGY METHOD AND SYSTEM AND LITHOGRAPHIC SYSTEM

      
Application Number 18619839
Status Pending
Filing Date 2024-03-28
First Publication Date 2024-07-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Huisman, Simon Reinald
  • Goorden, Sebastianus Adrianus
  • Belt, Harm Jan Willem
  • Alpeggiani, Filippo
  • Setija, Irwan Dani
  • Pellemans, Henricus Petrus Maria

Abstract

Disclosed is a method for measuring a parameter of interest from a target and associated apparatuses. The method comprises obtaining measurement acquisition data relating to measurement of a target on a production substrate during a manufacturing phase; obtaining a calibration correction database and/or a trained model having been trained on said calibration correction database, operable to correct for effects in the measurement acquisition data; correcting for effects in the measurement acquisition data using first correction data from said calibration correction database and/or using said trained model so as to obtain corrected measurement data and/or a corrected parameter of interest which is/are corrected for at least said effects; and updating said calibration correction data and/or said trained model with said corrected measurement data and/or corrected parameter of interest.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

4.

CHARGED PARTICLE APPARATUS AND METHOD

      
Application Number 18618957
Status Pending
Filing Date 2024-03-27
First Publication Date 2024-07-18
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Osterberg, Mans Johan Bertil
  • Schuurbiers, Koen

Abstract

A charged particle apparatus configured to project a multi-beam of charged particles along a multi-beam path toward a sample, the charged particle apparatus comprising: a charged particle source configured to emit a charged particle beam toward a sample; a charged particle-optical device configured to project sub-beams of a multi-beam of charged particles along the multi-beam path toward the sample, the sub-beams of the multi-beam of charged particles derived from the charged particle beam; a tube surrounding the multi-beam path configured to operate at a first potential difference from a ground potential; and a support configured to support the sample at a second potential difference from the ground potential, the first potential difference and the second potential difference having a difference so as to accelerate the multi-beam of charged particles towards the sample; wherein the first potential difference is greater than the second potential difference.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

5.

MANIPULATION OF CARRIER TRANSPORT BEHAVIOR IN DETECTOR

      
Application Number 18563841
Status Pending
Filing Date 2022-05-18
First Publication Date 2024-07-18
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Bex, Jan
  • Stepanenko, Nickolay
  • Oberst, Matthias
  • Neubauer, Harald Gert Helmut
  • Schweiger, Thomas
  • Stieglitz, Florian Alfons
  • Vollmer, Bernd Michael

Abstract

A charged particle detector may include a plurality of sensing elements formed in a substrate, wherein a sensing element of the plurality of sensing elements is formed of a first region on a first side of the substrate, and a second region on a second side of the substrate, the second side being opposite to the first side. The detector may also include a plurality of third regions formed on the second side of the substrate, the third regions including one or more circuit components. The detector may also include an array of fourth regions formed on the second side of the substrate, the array of fourth regions being between adjacent third regions.

IPC Classes  ?

  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • G01T 1/24 - Measuring radiation intensity with semiconductor detectors
  • G01T 1/29 - Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation

6.

DETERMINING MASK RULE CHECK VIOLATIONS AND MASK DESIGN

      
Application Number 18289384
Status Pending
Filing Date 2022-05-10
First Publication Date 2024-07-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Peng, Xingyue
  • Howell, Rafael C.
  • Wen Lu, Yen
  • Chen, Xiaorui

Abstract

Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.

IPC Classes  ?

  • G03F 1/84 - Inspecting
  • G03F 1/36 - Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
  • G06F 30/20 - Design optimisation, verification or simulation

7.

SUBSTRATE CLAMP LUBRICATION

      
Application Number EP2023082744
Publication Number 2024/149504
Status In Force
Filing Date 2023-11-22
Publication Date 2024-07-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Koevoets, Adrianus, Hendrik
  • Van Hal, Paulus, Albertus
  • Stel, Bart, Willem
  • Van Houts, Rens

Abstract

A substrate handling system to clamp a substrate is disclosed The system comprises a substrate clamp comprising a plurality of burls comprising respective distal ends, the distal ends forming a substrate support surface configured to support the substrate. The system further comprises a first nozzle configured to output a gas to at least partly surround the burls, and a second nozzle configured to dispense a lubricant into the gas. The lubricant may comprise a hydro carbon containing an acid.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

8.

SUBSTRATES FOR CALIBRATION OF A LITHOGRAPHIC APPARATUS

      
Application Number EP2023084925
Publication Number 2024/149537
Status In Force
Filing Date 2023-12-08
Publication Date 2024-07-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Haren, Richard, Johannes, Franciscus
  • Otten, Ronald, Henricus, Johannes
  • Li, Suwen
  • Van Dijk, Leon, Paul

Abstract

A method of calibrating a lithographic apparatus, the method comprising the following steps: obtaining a substrate having a Young's modulus which is substantially invariant to the orientation of an axis within the plane of the substrate along which said Young's modulus is defined and being provided with reference features; clamping the substrate to a substrate table of the lithographic apparatus; providing patterned features to the clamped substrate using said lithographic apparatus, each patterned feature being provided in proximity to a corresponding reference feature; measuring the position of each patterned feature relative to its corresponding reference feature; and calibrating a grid associated with positioning of substrates by the lithographic apparatus based on the measured positions of the patterned features.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

9.

THERMAL CONDITIONING SYSTEM AND LITHOGRAPHIC APPARATUS

      
Application Number EP2023085253
Publication Number 2024/149546
Status In Force
Filing Date 2023-12-12
Publication Date 2024-07-18
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Huang, Zhuangxiong
  • Van Den Berkmortel, Frank, Pieter, Albert
  • Roset, Niek, Jacobus, Johannes
  • Vermunt, Joris Wilhelmus Henricus
  • Kramer, Gijs
  • Vermeulen, Marcus, Martinus, Petrus, Adrianus

Abstract

A thermal conditioning system for a lithographic apparatus, the thermal conditioning system comprising: a body comprising a conditioning channel for flow of a conditioning fluid for thermally conditioning the body and/or a component supported by or supporting the body; and a supply connection configured to supply the conditioning fluid to the conditioning channel of the body, the supply connection shaped such that the conditioning fluid enters the body in a first direction and flows into the conditioning channel in a second direction different from the first direction, wherein: the body comprises a chamber adjacent to the supply connection in the first direction and configured to at least reduce a force applied by the supply connection to the body.

IPC Classes  ?

10.

eP5

      
Application Number 019053269
Status Pending
Filing Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Inspection tool using an electron beam for inspection of semiconductor materials, devices and products.

11.

OPERATING A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF

      
Application Number 18279694
Status Pending
Filing Date 2022-02-03
First Publication Date 2024-07-11
Owner
  • ASML Netherlands B.V. (Netherlands)
  • ASML Holding N.V. (Netherlands)
Inventor
  • Van Goch, Bram Paul Theodoor
  • Kunnen, Johan Gertrudis Cornelis
  • Na, Sae Na

Abstract

A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an action from a plurality of actions when a determination not to proceed is made, and performing the action on the patterning device and/or a lithographic apparatus.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 1/84 - Inspecting

12.

METHODS AND APPARATUS FOR CHARACTERIZING A SEMICONDUCTOR MANUFACTURING PROCESS

      
Application Number 18277223
Status Pending
Filing Date 2022-02-07
First Publication Date 2024-07-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Klein Koerkamp, Niek Willem
  • Hauptmann, Marc
  • Keyvani Janbahan, Aliasghar
  • Wang, Jingchao

Abstract

Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/66 - Testing or measuring during manufacture or treatment

13.

ALIGNING A DISTORTED IMAGE

      
Application Number 18415596
Status Pending
Filing Date 2024-01-17
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Pisarenco, Maxim
  • Middlebrooks, Scott Anderson
  • Van Kraaij, Markus Gerardus Martinus Maria
  • Verschuren, Coen Adrianus

Abstract

Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method for generating synthetic distorted images, the method comprising: obtaining an input set that comprises a plurality of distorted images; determining, using a model, distortion modes of the distorted images in the input set; generating a plurality of different combinations of the distortion modes; generating, for each one of the plurality of combinations of the distortion modes, a synthetic distorted image in dependence on the combination; and including each of the synthetic distorted images in an output set.

IPC Classes  ?

  • G06V 10/24 - Aligning, centring, orientation detection or correction of the image
  • G06T 11/00 - 2D [Two Dimensional] image generation

14.

SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME

      
Application Number 18499141
Status Pending
Filing Date 2023-10-31
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Lorito, Gianpaolo
  • Nihtianov, Stoyan
  • Liang, Xinqing
  • Kanai, Kenichi

Abstract

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

IPC Classes  ?

  • H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
  • H01J 37/244 - Detectors; Associated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

15.

SUBSTRATE RESTRAINING SYSTEM

      
Application Number 18547470
Status Pending
Filing Date 2022-02-03
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Verschuren, Marinus Augustinus Christiaan
  • Poiesz, Thomas

Abstract

A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displacable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.

IPC Classes  ?

  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

16.

Method and Apparatus for Coherence Scrambling in Metrology Applications

      
Application Number 17768851
Status Pending
Filing Date 2020-09-30
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Zhou, Zili
  • Ravensbergen, Janneke

Abstract

Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.

IPC Classes  ?

  • G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for

17.

IMPROVED DYNAMICS GEOMETRY FOR ONE DIMENSIONAL LEAF SPRING GUIDING

      
Application Number EP2023084798
Publication Number 2024/146741
Status In Force
Filing Date 2023-12-07
Publication Date 2024-07-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Schein, Perry
  • Garg, Apoorv
  • Smith, Nicholas, Christian
  • Lee, Jin-Won
  • Reed, Christopher, William

Abstract

Embodiments described herein include a guiding stage and a lithographic system configured to measure a position of an objective on the guiding stage by controlling the position of the objective. The guiding stage can comprise a flexure that reduces stiffness of the guiding stage in the z-axis when the objective is positioned to improve overall focus accuracy of the objective. A flexure guiding mechanism may be used to position the objective for making an overlay measurement.

IPC Classes  ?

18.

eP5

      
Application Number 019053348
Status Pending
Filing Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Inspection tool using an electron beam for inspection of semiconductor materials, devices and products..

19.

LIGHT SOURCES AND METHODS OF CONTROLLING; DEVICES AND METHODS FOR USE IN MEASUREMENT APPLICATIONS

      
Application Number 18612659
Status Pending
Filing Date 2024-03-21
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Reijnders, Marinus Petrus
  • Sabert, Hendrik
  • Uebel, Patrick Sebastian

Abstract

Provided are light sources and methods of controlling them, and devices and methods for use in measurement applications, particularly in metrology, for example in a lithographic apparatus. The methods and devices provide mechanisms for detection and/or correction of variations in the light source, in particular stochastic variations. Feedback or feedforward approaches can be used for the correction of the source and/or the metrology outputs. An exemplary method of controlling the spectral output of a light source which emits a time-varying spectrum of light includes the steps of: determining at least one characteristic of the spectrum of light emitted from the light source; and using said determined characteristic to control the spectral output.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

20.

CHARGED PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE APPARATUS AND METHOD

      
Application Number 18402585
Status Pending
Filing Date 2024-01-02
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor Slot, Erwin

Abstract

A method for projecting a charged particle multi-beam toward a sample comprises manipulating respective sub-beams of a charged particle multi-beam using a control lens array comprising a plurality of control lenses for the respective sub-beams; controlling the control lens array to manipulate the sub-beams such that the sub-beams are shaped by respective apertures of a beam shaping aperture array such that less than a threshold current of charged particles of each sub-beam passes through the respective apertures of the beam shaping aperture array, down-beam of the control lens array, comprising a plurality of apertures for the respective sub-beams; and controlling the control lens array to manipulate the sub-beams such that at least the threshold current of at least a proportion of the sub-beams passes through the respective apertures of the beam shaping aperture array.

IPC Classes  ?

  • H01J 37/141 - Electromagnetic lenses
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

21.

METROLOGY METHOD AND APPARATUS

      
Application Number 18413910
Status Pending
Filing Date 2024-01-16
First Publication Date 2024-07-11
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Beukman, Arjan Johannes Anton
  • El Gawhary, Omar
  • Van Weperen, Ilse
  • Wöltgens, Pieter Joseph Marie

Abstract

Disclosed is a method for measuring alignment on an alignment mark, and associated apparatuses. The method comprises illuminating the alignment mark with illumination comprising at least one wavelength; capturing the scattered radiation scattered from the alignment mark as a result of said illumination step, and determining at least one position value for said alignment mark from an angularly resolved representation of said scattered radiation, wherein said alignment mark, or a feature thereof, is smaller than said at least one wavelength in at least one dimension of a substrate plane.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

22.

DARK FIELD MICROSCOPE

      
Application Number 18441710
Status Pending
Filing Date 2024-02-14
First Publication Date 2024-07-11
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Goorden, Sebastianus Adrianus

Abstract

A dark field metrology device includes an objective lens arrangement and a zeroth order block to block zeroth order radiation. The objective lens arrangement directs illumination onto a specimen to be measured and collects scattered radiation from the specimen, the scattered radiation including zeroth order radiation and higher order diffracted radiation. The dark field metrology device is operable to perform an illumination scan to scan illumination over at least two different subsets of the maximum range of illumination angles; and simultaneously perform a detection scan which scans the zeroth order block and/or the scattered radiation with respect to each other over a corresponding subset of the maximum range of detection angles during at least part of the illumination scan.

IPC Classes  ?

  • G02B 21/00 - Microscopes
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/956 - Inspecting patterns on the surface of objects
  • G02B 21/02 - Objectives
  • G02B 21/10 - Condensers affording dark-field illumination
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

23.

IMAGING VIA ZEROTH ORDER SUPPRESSION

      
Application Number 18532977
Status Pending
Filing Date 2023-12-07
First Publication Date 2024-07-04
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Baselmans, Johannes Jacobus Matheus
  • Hsu, Duan-Fu Stephen
  • Bouman, Willem Jan
  • Timmermans, Frank Jan
  • Van Lare, Marie-Claire

Abstract

Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

24.

METHOD TO GENERATE AN ACCELERATION SETPOINT PROFILE FOR A MOVABLE OBJECT, SETPOINT GENERATOR AND LITHOGRAPHIC APPARATUS

      
Application Number EP2023083169
Publication Number 2024/141209
Status In Force
Filing Date 2023-11-27
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Butler, Hans
  • Kamidi, Ramidin, Izair

Abstract

The invention provides a method to generate an acceleration setpoint profile for a movable object, wherein the method comprises: providing a time domain acceleration curve with finite acceleration time length, providing a time domain jerk curve with finite jerk time length, calculating a time domain convolution of the time domain acceleration curve and the time domain jerk curve to generate the acceleration setpoint profile, wherein the time domain jerk curve has a zero value at a start and an end of the finite jerk time length, and wherein an amplitude profile of the time domain jerk curve, when Fourier transformed into 0 frequency domain, has an amplitude that decreases for higher frequencies with at least 60 dB per decade.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G05B 19/416 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control of velocity, acceleration or deceleration

25.

PICK AND PLACE WITH DIE ACTUATORS FOR HETEROGENEOUS INTEGRATION

      
Application Number EP2023083950
Publication Number 2024/141220
Status In Force
Filing Date 2023-12-01
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Jager, Pieter, Willem, Herman
  • Van Zwet, Erwin, John
  • Van Riel, Martinus, Cornelius, Johannes, Maria
  • Van Der Lans, Marcus, Johannes
  • De Man, Hendrik

Abstract

A method for die placement is provided, comprising obtaining a plurality of target locations for a plurality of donor dies, measuring locations of the plurality of donor dies, the plurality of donor dies supported by a plurality of die actuators, adjusting the locations of the plurality of donors dies to correspond substantially to the plurality of target locations using the plurality of die actuators, and placing the plurality of donor dies on the plurality of target locations.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • B25J 7/00 - Micromanipulators
  • B25J 9/00 - Programme-controlled manipulators

26.

MULTICHANNEL LOCK-IN CAMERA FOR MULTI-PARAMETER SENSING IN LITHOGRAPHIC PROCESSES

      
Application Number EP2023084624
Publication Number 2024/141235
Status In Force
Filing Date 2023-12-06
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Pellemans, Henricus, Petrus, Maria
  • Ramachandra Rao, Padmakumar

Abstract

A metrology system can include an illumination system, a camera, and an analyzer system. The illumination system transmits illumination toward a target. The illumination has a plurality of illumination parameters associated with a corresponding plurality of modulation frequencies. The camera receives scattered illumination from the target and generates, per pixel of the camera, a measurement signal encoded with signatures of the plurality of modulation frequencies. The analyzer system, per pixel of the camera, demodulates the measurement signal based on the plurality of modulation frequencies outputs a phase, an amplitude, or the phase and amplitude of demodulated components of the measurement signal corresponding to the modulation frequencies.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

27.

METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATION

      
Application Number EP2023084626
Publication Number 2024/141236
Status In Force
Filing Date 2023-12-06
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Karamnejad, Amin
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Danilin, Alexander, Alexandrovich

Abstract

Disclosed herein is a computer system configured to: model, using boundary conditions that are dependent on a first state of a reticle during a first time period, the deformation of the reticle during the first time period; model, using boundary conditions that are dependent on a second state of the reticle during a second time period, the deformation of the reticle during the second time period; and control the operation of a lithographic process in dependence on the modelled deformation of the reticle; wherein: the first state of the reticle is different from the second state of the reticle; and the modelled deformation of the reticle at the start of the second time period is based on the modelled deformation of the reticle at the end of the first time period.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

28.

SOURCE MASK OPTIMIZATION BASED ON SYSTEMATIC EFFECTS ON A LITHOGRAPHIC APPARATUS

      
Application Number EP2023085228
Publication Number 2024/141256
Status In Force
Filing Date 2023-12-11
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Staals, Frank

Abstract

Source mask optimization (SMO) is described. The SMO comprises determining a source configuration (e.g., an illumination pupil) of the lithographic apparatus for first features in a first layer of a pattern based on systematic effects on the lithographic apparatus components that cause feature dependent imaging performance changes for second features in a second layer of the pattern. The systematic effects on the lithographic apparatus components comprise mirror heating, for example. Mirror heating based SMO is performed for a first layer's illumination pupil with a cost function for second layer's performance. For example, mirror heating based SMO may be performed to generate a metal layer illumination pupil that creates less mirror heating impact to a subsequent via layer exposure, and/or mirror heating based SMO may be performed to generate a via layer illumination pupil that is less sensitive to mirror heating caused by a prior metal layer exposure, as representative examples.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

29.

APPARATUSES AND METHODS FOR EXTREME ULTRAVIOLET LIGHT SOURCE UTILIZING THERMALLY INDUCED BREAKUP OF TARGET MATERIAL STREAM

      
Application Number EP2023086722
Publication Number 2024/141345
Status In Force
Filing Date 2023-12-19
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Fareed, Farzad
  • Chikan, Viktor
  • Richards, Robert, Garrett

Abstract

A method includes producing a continuous stream of a material and periodically heating the stream by applying a varying light, a varying electrical current, or a varying electron beam to the stream to control a breakup of the stream into segments. The stream can be periodically heated at a single location proximate an orifice of the nozzle. The material can be a material adapted to emit EUV radiation when in a plasma state. A droplet generator implementing the method is also disclosed.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

30.

CHARGED PARTICLE APPARATUS WITH IMPROVED VACUUM CHAMBER

      
Application Number EP2023087440
Publication Number 2024/141423
Status In Force
Filing Date 2023-12-21
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Wang, Mingkang
  • Xi, Qingpo
  • Dong, Liang
  • Du, Zhidong
  • Gong, Zizhou
  • Yu, Le
  • Dou, Juying
  • Ren, Weiming
  • Hu, Xuerang
  • Zhang, Zhiming

Abstract

An electron beam source is configured in an ultra-high vacuum chamber. Gas molecules are prevented from reaching an emission tip of the electron source by a differential aperture system. The differential aperture system may comprise at least one aperture plate configured to seal a region of the vacuum chamber from an outgassing source so that gas molecules may only pass from the source to the region by holes in the at least one aperture plate.

IPC Classes  ?

  • H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

31.

MASKING DEVICE AND CONTROLLING METHOD THEREOF

      
Application Number EP2023087655
Publication Number 2024/141487
Status In Force
Filing Date 2023-12-22
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Jong, Edwin
  • Everts, Frank

Abstract

Disclosed is a method for controlling an exposure dose at a substrate utilizing a masking device, which comprises a first blade and a second blade. The method comprises providing radiation pulses at the masking device for exposing the substrate, exposing an exposure area at the substrate by moving the first blade in a first direction relative to a slit center and by moving the second blade in a second 5 direction, with the second direction being opposite to the first direction, keeping an amount of radiation received at the exposure area constant, and wherein moving the first and second blade is defined by a velocity profile of a substrate support supporting the substrate.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

32.

OBJECT HOLDER

      
Application Number EP2023082683
Publication Number 2024/141206
Status In Force
Filing Date 2023-11-22
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Schmidt, Volker

Abstract

An object holder configured to support an object, the object holder comprising a first conductive layer provided between a first insulating layer and a second insulating layer, a second conductive layer provided between the second insulating layer and a third insulating layer, a plurality of burls, each burl of the plurality of burls comprising an object receiving surface and a layer of resistive or conductive material provided on at least one or each burl of the plurality of burls such that the layer of resistive or conductive material electrically connects the object receiving surface of the at least one or each burl of the plurality of burls to the first conductive layer.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

33.

A FLUID HANDLING SYSTEM AND METHOD

      
Application Number EP2023082905
Publication Number 2024/141208
Status In Force
Filing Date 2023-11-23
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Der Gaag, Marc, Léon
  • Gerritzen, Justin, Johannes, Hermanus
  • Nayak Kallarbail, Shruthi
  • Jovanovic, Milena

Abstract

Disclosed herein is a fluid handling system comprising a liquid confinement structure (12), a gas supply conduit (70) and a fluid transport conduit (80). The liquid confinement structure is configured to confine immersion fluid to a space between at least a part of the liquid confinement structure and a surface of a substrate. The gas supply conduit is configured to supply fluid to the space. The gas supply conduit has a flow controller (71) configured to control the supply of gas from the gas supply conduit. The fluid transport conduit is configured to transport fluid extracted from the space. The fluid transport conduit has a flow meter (81) configured to measure the flow of gas in the fluid transport conduit. Under a calibration mode, the gas supplied by the flow controller flows directly to the fluid transport conduit via a bypass conduit (90), wherein the bypass conduit bypasses the liquid confinement structure.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

34.

METROLOGY SYSTEM BASED ON MULTIMODE OPTICAL FIBER IMAGING AND LITHOGRAPHIC APPARATUS

      
Application Number EP2023083793
Publication Number 2024/141215
Status In Force
Filing Date 2023-11-30
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Sonde, Aniruddha Ramakrishna
  • Ajgaonkar, Mahesh, Upendra
  • Shome, Krishanu

Abstract

An inspection system includes a radiation source, a multimode optical fiber, an optical structure, a two-dimensional detector array, and a computing device. The radiation source irradiates a target to generate scattered radiation from the target. The scattered radiation comprises a diffraction order pair. The multimode optical fiber receives the scattered radiation and outputs a mix of the diffraction order pair based on a propagation property of the multimode optical fiber. The optical structure combines the diffraction order pair at an input side of the multimode optical fiber. The two-dimensional detector array receives the mix of the diffraction order pair and generates a measurement signal corresponding to the mix of the diffraction order pair. The computing device analyzes the measurement signal based on the propagation property and discriminates intensities of the diffraction order pair based on the analyzing.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

35.

LITHOGRAPHIC APPARATUS AND INSPECTION SYSTEM FOR MEASURING WAFER DEFORMATION

      
Application Number EP2023083799
Publication Number 2024/141216
Status In Force
Filing Date 2023-11-30
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Pellemans, Henricus, Petrus, Maria

Abstract

A system for measuring deformation of a substrate includes an illuminator, a camera, a modulator system, and a controller. The illuminator directs two beams of radiation at each target of a plurality of targets disposed on the substrate to produce two beams of scattered radiation from the each target. The camera detects interference patterns of the two beams of scattered radiation from the plurality of targets and generates an interferogram based on the interference pattern. The modulator system adjusts the interference patterns by adjusting a relative phase of the two beams of radiation. The controller analyzes the measurement signal and to determine the deformation of the substrate based on the interferogram and the adjusting of the relative phase.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • G01B 11/16 - Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures

36.

RECESS-BASED PICK AND PLACE FOR HETEROGENEOUS INTEGRATION

      
Application Number EP2023083949
Publication Number 2024/141219
Status In Force
Filing Date 2023-12-01
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Venugopalan, Syam, Parayil
  • Warnaar, Patrick
  • De Jager, Pieter, Willem, Herman
  • Jansen, Bas
  • Janssens, Stef, Marten, Johan

Abstract

An apparatus for die placement comprising a first stage comprising a plurality of recesses, the plurality of recesses configured to accept a plurality of donor dies; a second stage comprising a support for one or more targets; and a measurement system, functionally coupled to the first stage, and configured to: obtain locations of the plurality of donor dies in the plurality of recesses of the first stage, and based at least on the obtained locations, provide output signals to adjust the locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets, and based at least in part on the adjusted locations, provide output signals to place the plurality of donor dies on the one or more targets supported by the second stage by relative movement between the first stage and the second stage.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

37.

HYBRID DETECTORS FEATURING LOW TEMPERATURE SURFACE PASSIVATION

      
Application Number EP2023085457
Publication Number 2024/141261
Status In Force
Filing Date 2023-12-13
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ramachandra Rao, Padmakumar
  • Sberna, Paolo, Maria

Abstract

Systems, apparatuses, and methods include a detector including a plurality of detection elements including a portion of a silicon substrate comprising: a front side of the portion of the silicon substrate including a PIN or NIP diode that comprises a p-type region and an n-type region; a back side of the portion of the silicon substrate, opposite of the front side, comprising a passivation layer deposited at low temperature that when a bias is applied the PIN or NIP diode is configured to detect an electron that enters the backside of the portion of the silicon substrate.

IPC Classes  ?

  • H01L 31/0216 - Coatings
  • H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
  • H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

38.

OBJECTIVE LENS COOLING SYSTEM

      
Application Number EP2023085458
Publication Number 2024/141262
Status In Force
Filing Date 2023-12-13
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Casucci, Paul
  • Ji, Xiaoyu
  • Yu, Le
  • Tao, Xingtian

Abstract

An improved magnetic lens cooling system is disclosed. A magnetic lens assembly can comprise a coil, a housing containing the coil, and a pole piece that is isolated from the housing such that there is a gap between the housing and the pole piece. Wherein the magnetic lens assembly can be configured to have a vacuum pressure in the gap.

IPC Classes  ?

39.

SYSTEM, METHODS, AND APPARATUSES WITH REDUCED NOISE CURRENT

      
Application Number EP2023085723
Publication Number 2024/141275
Status In Force
Filing Date 2023-12-13
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ray, Valery
  • Benson, Donald
  • Dong, Zhonghua
  • Li, Li

Abstract

Systems and apparatuses may include at least three conductors including a first conductor that is electrically isolated from a chassis, the first conductor being electrically connected to a node of an AC power source, the node of the AC power source being electrically connected to a ground reference, and the first conductor configured to provide a path for noise current generated by the EMI filter to flow to the AC power source to enable the noise current to pass to the AC power source without passing through the chassis. Each conductor may include an inductor, the inductors being magnetically coupled such that a sum of currents flowing through the inductors is substantially zero. Systems may include shielded cables electrically connected to a chamber to provide a low-impedance path for noise currents to flow, wherein at a mechanical interface, a column is mechanically coupled to and electrically isolated from the chamber.

IPC Classes  ?

  • H02M 1/12 - Arrangements for reducing harmonics from ac input or output
  • H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
  • H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H02M 7/04 - Conversion of ac power input into dc power output without possibility of reversal by static converters

40.

EUV LIGHT SOURCE TARGET GENERATOR WITH PRE-COALESCENCE DROPLET DETECTION MODULE

      
Application Number EP2023086738
Publication Number 2024/141348
Status In Force
Filing Date 2023-12-19
Publication Date 2024-07-04
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Mckenzie, Paul, Alexander
  • Xie, Yong
  • Simmons, Rodney, D
  • Kambhampati, Murali, Krishna
  • Vohra, Quaid, Rafique
  • Binun, Paul, William

Abstract

An extreme ultraviolet (EUV) light source target generator includes an elongated passageway along which pre-coalescence droplets can travel, the passageway surrounded by a passageway wall; a window in the passageway wall; and a pre-coalescence droplet detection module positioned to receive light transmitted through the window, the pre-coalescence droplet detection module comprising a lens system configured to collect and transmit light received through the window, and a light detector configured to receive light transmitted by the lens system.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

41.

IMPROVED CHARGED PARTICLE IMAGE INSPECTION

      
Application Number 18553041
Status Pending
Filing Date 2022-02-17
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Lei, Hairong
  • Fang, Wei
  • Fu, Yung Wen

Abstract

An improved method of defect classification is disclosed. An improve method comprises obtaining an inspection image, obtaining layout data associated with the image, obtaining a probability map derived from the layout data, wherein the probability map identifies a probability of a first type of defect occurring in a region of the layout data, identifying a defect in the inspection image occurring at a first location, and classifying the defect based on the probability map and the first location.

IPC Classes  ?

  • G06T 7/00 - Image analysis
  • G06V 10/22 - Image preprocessing by selection of a specific region containing or referencing a pattern; Locating or processing of specific regions to guide the detection or recognition
  • G06V 20/69 - Microscopic objects, e.g. biological cells or cellular parts

42.

LASER BEAM METROLOGY SYSTEM, LASER BEAM SYSTEM, EUV RADIATION SOURCE, AND LITHOGRAPHIC APPARATUS

      
Application Number 18557200
Status Pending
Filing Date 2022-03-29
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Beeker, Willem Paul
  • Anandan, Krishna Prashanth
  • Ganguly, Vasishta Parthasarathy

Abstract

A laser beam metrology system (500) configured to co-operate with a laser beam system that is configured to sequentially direct a first laser beam pulse and a second laser beam pulse (430) to a target along two independent optical paths, the laser beam metrology system comprising a beam steering device (470) and a detection system (510). A laser beam system comprising the laser beam metrology system and a EUV source is also described.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness

43.

HIERARCHICAL CLUSTERING OF FOURIER TRANSFORM BASED LAYOUT PATTERNS

      
Application Number 18557578
Status Pending
Filing Date 2022-04-28
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wang, Jingchun
  • Ye, Chuang
  • Jin, Shengcheng

Abstract

Apparatuses, systems, and methods for grouping a plurality of patterns extracted from image data are disclosed. In some embodiments, the method for grouping the patterns comprises receiving the image data including the plurality of patterns that represent features to be formed on a portion of a wafer. The method also comprises separating the plurality of patterns after Fourier Transform into multiple sets of patterns. The method further comprises performing, to a respective set of patterns, a hierarchical clustering to obtain a plurality of subsets of patterns by recursively evaluating features related to similarity between patterns within the respective set of patterns.

IPC Classes  ?

  • G06V 10/762 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using clustering, e.g. of similar faces in social networks
  • G06T 5/10 - Image enhancement or restoration by non-spatial domain filtering
  • G06T 7/00 - Image analysis
  • G06T 7/11 - Region-based segmentation
  • G06V 10/44 - Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components
  • G06V 10/74 - Image or video pattern matching; Proximity measures in feature spaces

44.

PATTERNING DEVICE DEFECT DETECTION SYSTEMS AND METHODS

      
Application Number 18596467
Status Pending
Filing Date 2024-03-05
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Lare, Marie-Claire
  • Wieland, Marco Jan-Jaco

Abstract

Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.

IPC Classes  ?

  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

45.

SEM IMAGE ENHANCEMENT

      
Application Number 18596540
Status Pending
Filing Date 2024-03-05
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Huisman, Thomas Jarik
  • Van Rens, Jasper Frans Mathijs

Abstract

Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.

IPC Classes  ?

  • G06T 5/50 - Image enhancement or restoration by the use of more than one image, e.g. averaging, subtraction
  • G06T 5/80 - Geometric correction
  • G06T 7/33 - Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
  • H01J 37/22 - Optical or photographic arrangements associated with the tube

46.

OBJECT TABLE

      
Application Number EP2023082548
Publication Number 2024/132337
Status In Force
Filing Date 2023-11-21
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Zhu, Jianqiang
  • Engelen, Johannes, Bernardus, Charles
  • Kruizinga, Matthias
  • Allsop, Nicholas, Alan
  • Koevoets, Adrianus, Hendrik
  • Galaktionov, Oleksiy, Sergiyovich
  • Van Der Wekken, Michael, Christiaan
  • Warming, Till

Abstract

An object table comprising a base having a planar surface, a substrate support or patterning device support comprising a clamp and a set of burls, the burls extending from the clamp and having distal ends adjacent to the planar surface of the base, wherein, the object table further comprises a compliant layer disposed between the burl distal ends and the planar surface of the base and a frictional layer which is in contact with the compliant layer.

IPC Classes  ?

  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • G03F 7/20 - Exposure; Apparatus therefor

47.

LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD

      
Application Number EP2023083065
Publication Number 2024/132381
Status In Force
Filing Date 2023-11-24
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Chaudhuri, Manis
  • Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
  • Yakunin, Andrei, Mikhailovich
  • Van De Kerkhof, Marcus, Adrianus

Abstract

Disclosed herein is a lithographic apparatus comprising: an illumination system for providing a beam of EUV radiation along a beam path; a holder for a patterning device configured to impart a pattern to the beam of radiation, the patterning device comprising a patterning surface with a pattern thereon; and an electron beam source configured to emit electrons toward the patterning surface and/or a part of the beam path adjacent the patterning surface.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

48.

A POD FOR A PATTERNING DEVICE

      
Application Number EP2023083405
Publication Number 2024/132408
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Wade, Robert, Jeffrey

Abstract

A system includes a first container and a second container. The first container receives a patterning device and maintains a predetermined environment inside the first container. The second container receives the first container and maintains a vacuum inside the second container. The second container includes a flange, a first end, and a second end. The flange is located on an exterior of the second container. The second container can be gripped and transported via the flange. The first end includes a vacuum valve and a purge valve. The vacuum valve facilitates removal of gas from the second container. The purge valve facilitates introduction of gas into the second container. The vacuum valve and the purge valve interface with a first external vacuum environment. The second end opposite the first end and the second end has an opening. The opening allows the removal of the first container from the second container.

IPC Classes  ?

  • G03F 1/66 - Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

49.

METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS

      
Application Number EP2023083407
Publication Number 2024/132410
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Paarhuis, Bart, Dinand
  • Danilin, Alexander, Alexandrovich

Abstract

Disclosed herein is a computer system configured to: control a lithographic process performed on a first substrate with a reticle that is in a cold state; determine one or more performance metrics of the lithographic process in dependence on an inspection of the first substrate; determine clamping-induced deformation modes of the reticle in dependence on the one or more performance metrics; and determine and control the application of process corrections to a lithographic process performed on a second substrate in dependence on the determined clamping-induced deformation modes.

IPC Classes  ?

50.

METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS

      
Application Number EP2023083576
Publication Number 2024/132427
Status In Force
Filing Date 2023-11-29
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Danilin, Alexander, Alexandrovich

Abstract

Disclosed herein is a computer system configured to use a reticle heating model to determine the shape and/or deformation of a reticle and control the operation of a lithographic process that uses the reticle in dependence on the modelled shape and/or deformation. The computer system is configured to determine, in dependence on generated reticle process data and known thermal properties of the reticle, that a long track hiccup has occurred and in response to determining that a long track hiccup has occurred, reconfigure the reticle heating model to the same state initialized states used at the start of performing lithographic processes on the lot of substrates.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

51.

METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS

      
Application Number EP2023083783
Publication Number 2024/132446
Status In Force
Filing Date 2023-11-30
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Danilin, Alexander, Alexandrovich
  • Schenkelaars, Thijs
  • Moharana, Neehar, Ranjan

Abstract

Disclosed herein is a computer system configured to perform, before performing a lithographic process on a first substrate in a lot of substrates, reticle alignment, RA, measurements with a first and second plurality of edge markers of the reticle. The reticle deformation model determines shape and/or deformation of the reticle in dependance on the RA measurements. A lithographic process performed on the first substrate is controlled in dependence on the determined shape and/or deformation. Before performing a lithographic process on a second substrate in the lot of substrates, further RA measurements are performed. The reticle deformation model determines the deformation of the reticle when performing a lithographic process on the second substrate in dependance on the further RA measurements and the previous RA measurements.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03B 27/68 - Introducing or correcting distortion, e.g. in connection with oblique projection
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

52.

METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS

      
Application Number EP2023083786
Publication Number 2024/132447
Status In Force
Filing Date 2023-11-30
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Danilin, Alexander, Alexandrovich
  • Meijerink, Rowin
  • Van Hooijdonk, Ivo, Gregor, Sebastian

Abstract

Disclosed herein is a computer system configured to: model the shape and/or deformation of a reticle; and control the operation of a lithographic process that uses the reticle in dependence on the modelled shape and/or deformation; wherein to model the shape and/or deformation of the reticle, the computer system is configured to: obtain initial reference shape data that represents a shape of a reticle; obtain reticle heating calibration, RHC, data that comprises reticle shape data and corresponding reticle alignment, RA, measurement data at different reticle temperatures; generate calibrated reference shape data in dependence on the initial reference shape data, the RHC data and an RA measurement; and model the shape and/or deformation of the reticle in dependence on the calibrated reference shape data.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

53.

METHODS AND SYSTEMS FOR DETERMINING RETICLE DEFORMATIONS

      
Application Number EP2023083787
Publication Number 2024/132448
Status In Force
Filing Date 2023-11-30
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Paarhuis, Bart, Dinand
  • Danilin, Alexander, Alexandrovich
  • Johnson, Richard, John
  • Van Den Hanenberg, Stephan, Joan, Michel

Abstract

A computer system is configured to initialize a reticle heating model in dependence on reference data for a reticle in a cold state and a reticle alignment measurement of the reticle. States of the reticle heating model are updated as the lithographic processes are performed on the first lot of substrates. Current states of the reticle heating model are stored. Reticle handling data is generated. It is determined whether the reticle is in a hot state or a cold state in dependence on reticle handling data. If the reticle is determined to be in the hot state, the starting state for the reticle heating model is configured in dependence on the stored states. If the reticle is determined to be in the cold state, the reticle heating model is re-initialized in dependence on reference data for the reticle in a cold state and the reticle alignment measurement of the reticle.

IPC Classes  ?

54.

HIGH-THROUGHPUT LOAD LOCK CHAMBER

      
Application Number EP2023084631
Publication Number 2024/132539
Status In Force
Filing Date 2023-12-06
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Yu, Dongchi
  • Lin, Yi-Chen
  • Fu, Shao-Wei
  • Lin, Jun-Li
  • Chang, Huan-Yu

Abstract

An improved vacuum chamber for a system handling a wafer is provided. The vacuum chamber may comprise a top wall wherein at least a portion of an interior surface of the top wall is slanted relative to a side view of the top wall. The vacuum chamber may further comprise a gas vent port coupled to the top wall and a baffle coupled to the vacuum chamber and positioned below the gas vent port, wherein the baffle is configured to reduce turbulence of gas that enters the vacuum chamber via the gas vent port.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

55.

ADVANCED CHARGE CONTROLLER CONFIGURATION IN A CHARGED PARTICLE SYSTEM

      
Application Number EP2023085702
Publication Number 2024/132806
Status In Force
Filing Date 2023-12-13
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Zhang, Jian
  • Ye, Ning
  • Ji, Xiaoyu
  • Hu, Xuerang

Abstract

Systems, apparatuses, and methods for advanced charge controller configurations in a charged particle system. A system may include a light source configured to emit a light beam; and a mirror system configured to adjust an angle of incidence of the light beam on a sample during an inspection of the sample without substantially adjusting a position of the light beam on the sample.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details
  • H01J 37/22 - Optical or photographic arrangements associated with the tube

56.

CHARGED PARTICLE BEAM INSPECTION APPARATUS AND METHOD

      
Application Number EP2023085707
Publication Number 2024/132808
Status In Force
Filing Date 2023-12-13
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ji, Xiaoyu
  • Zhang, Datong
  • Ren, Weiming
  • Zhu, Xuechen

Abstract

A charged particle beam inspection apparatus for inspecting a sample (550) and charged particle beam adjustment technology, and more particularly, a charged particle beam contactless electrical characterization technology (e.g. for defect detection) is disclosed. The charged particle beam apparatus comprises a charged particle source (503) configured to emit a primary charged particle beam (505); a first lens (526) configured to manipulate the primary charged particle beam to adjust a probe current of the primary charged particle beam; an objective lens (532) configured to focus the primary charged particle beam to a focal point substantially on a surface of the sample; a second lens (533d,e) configured to generate an electrostatic field that substantially overlaps with a magnetic field generated by the objective lens and also to compensate for a focus variation caused by a change in probe current without changing a focusing power of the objective lens, wherein the change in probe current is caused by the first lens; and a deflector (533a-e) configured to deflect the primary charged particle beam to scan a scan line of a field of view of the sample.

IPC Classes  ?

  • H01J 37/12 - Lenses electrostatic
  • H01J 37/145 - Combinations of electrostatic and magnetic lenses
  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/21 - Means for adjusting the focus
  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

57.

A NEW DESIGN CONCEPT OF SCANNING ELECTRON MICROSCOPE WITH CHARGED PARTICLE SOURCE

      
Application Number EP2023086733
Publication Number 2024/133328
Status In Force
Filing Date 2023-12-19
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Krupin, Oleg
  • Gong, Zizhou
  • Ren, Weiming
  • Hu, Xuerang
  • Wang, Yongxin

Abstract

A particle beam inspection apparatus, and more particularly, a method of particle beam parameter variation compensation for image inspection and enhancement are disclosed. A primary beam emission current may be continuously monitored to compensate for an emission current fluctuation. The fluctuation may be compensated by adjusting a characteristic of the electron source or a sub-system within the charged particle system. An event-based detection system may be used to measure a number of electrons impacting a detector within a period of time with a location on a sample and normalize a generated image of the sample. A deflector may adjust a deflection speed of the primary beam across the sample to compensate for emission current fluctuation while maintaining a constant dose impacting a sample. Thus, image quality is improved, sources of error during sample inspection are minimized, metrology measurement accuracy is improved, and throughput is increased.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/244 - Detectors; Associated components or circuits therefor

58.

PATTERNING PARAMETER DETERMINATION USING A CHARGED PARTICLE INSPECTION SYSTEM

      
Application Number 18596323
Status Pending
Filing Date 2024-03-05
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ruan, Junru
  • Li, Haiyan

Abstract

A method of obtaining focus and dose data that requires no special marks and that uses images of in-die features is described. A focus/dose matrix wafer is created. Dimensions such as critical dimension (CD), CD uniformity (CDU), edge placement error (EPE), etc., at in-die locations are measured using a charged particle inspection system having a large field of view. Machine learning or regression methods are used to determine a relationship between focus and dose and the measured data. The same dimensions can then be measured on a production wafer and the relationship can be utilized to determine the focus and dose for the production wafer.

IPC Classes  ?

59.

METROLOGY METHOD AND ASSOCIATED METROLOGY AND LITHOGRAPHIC APPARATUSES

      
Application Number 18596499
Status Pending
Filing Date 2024-03-05
First Publication Date 2024-06-27
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Tinnemans, Patricius Aloysius Jacobus
  • Karssemeijer, Leendert Jan

Abstract

Disclosed is a method of determining a substrate deformation metric relating to at least one substrate, the substrate deformation metric describing deformation across the at least one substrate. The method comprises obtaining alignment data relating to measurement of a plurality of structures on said substrate using a plurality of illumination conditions; and determining substrate deformation metric values for the substrate deformation metric which minimizes the number of basis vectors which are required to expand dispersion due to structure deformation of said plurality of structures.

IPC Classes  ?

  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

60.

OBJECT TABLE

      
Application Number EP2023082029
Publication Number 2024/132310
Status In Force
Filing Date 2023-11-16
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Warming, Till

Abstract

An object table which may be used in a lithographic apparatus. The object table comprises an electrostatic clamp which comprises at least one electrode which is provided between insulating layers. The object table also comprises a second clamp which comprises an array of electrically connected burls, the burls comprising a layer of resistive material at an object receiving surface of the burls.

IPC Classes  ?

  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • G03F 7/20 - Exposure; Apparatus therefor

61.

METHOD TO INFER AND ESTIMATE RETICLE TEMPERATURE BASED ON RETICLE SHAPE MEASUREMENTS

      
Application Number EP2023082417
Publication Number 2024/132326
Status In Force
Filing Date 2023-11-20
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Subramanian, Raaja Ganapathy

Abstract

Embodiments herein describe systems, methods, and devices for determining reticle temperature based on reticle shape measurements. System can comprises an illumination path configured to direct radiation onto a patterning device and a detection path configured to direct a portion of the radiation, after interaction with the patterning device, onto a detector configured to output a signal representative of the portion of the radiation beam. A controller can to receive the signal, determine information about a physical characteristic or alignment of the patterning device, and use the information to estimate a load temperature of the patterning device. The controller or another controller can estimated load temperature to compensate for temperature-induced magnification of the patterning device. The controller or the another controller compensates by adjusting a positioning of a stage or lens of the system.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

62.

METHOD OF GENERATING A PROJECTION PATTERN OF A PLURALITY OF PROJECTIONS OF A SUBSTRATE TABLE

      
Application Number EP2023082427
Publication Number 2024/132327
Status In Force
Filing Date 2023-11-20
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Stein, Alexander
  • Lehberger, Ernst

Abstract

A pattern of projections in a surface portion of a substrate table for supporting a wafer is generated by steps of providing repulsive periphery potentials acting in the support plane and comprising outer periphery potentials being assigned to outer periphery points surrounding the surface portion; providing an initial distribution of projections, each having a variable projection position in the surface portion; providing repulsive projection potentials acting in the support plane and being assigned to the projections; calculating a local force acting on each of the projections, based on a superposition of the periphery and projection potentials at the position of the projection; and generating the projection pattern to be obtained by repeatedly shifting the projection positions and calculating the local force acting on each of the projections at the current position, until a predetermined optimization criterion is fulfilled. Furthermore, a substrate table and manufacturing the substrate table are described.

IPC Classes  ?

  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • G03F 7/20 - Exposure; Apparatus therefor

63.

EUV UTILIZATION SYSTEM AND METHOD

      
Application Number EP2023082904
Publication Number 2024/132367
Status In Force
Filing Date 2023-11-23
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Beckers, Jasper, Pierre
  • Van De Wiel, Hubertus, Johannes
  • Te Sligte, Edwin
  • Harrison, Kramer, Daniel
  • Van Drent, William, Peter

Abstract

A EUV utilization system comprising a radiation source comprising a drive laser configured to generate drive laser radiation for irradiating a fuel and thereby generating extreme ultraviolet radiation. The EUV utilization system comprises a EUV utilization apparatus configured to receive extreme ultraviolet radiation directed through an optical aperture located between the radiation source and the EUV utilization apparatus. The EUV utilization apparatus comprises a radiation shield configured to block at least a portion of the drive laser radiation that propagates through the optical aperture.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

64.

DETECTOR FOR DETECTING RADIATION

      
Application Number EP2023082908
Publication Number 2024/132368
Status In Force
Filing Date 2023-11-23
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Nihtianov, Stoyan

Abstract

A detector for detecting radiation is disclosed. In one arrangement, the detector has a sensing element that comprises a semiconducting sensor substrate (402) and is configured such that impingement of target radiation generates charge carriers in the sensor substrate. Readout circuitry provides an output responsive to charge carriers generated in the sensor substrate. The sensor substrate comprises a low bandgap layer (408) and a high bandgap portion (409).

IPC Classes  ?

  • H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
  • H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
  • G01T 1/24 - Measuring radiation intensity with semiconductor detectors
  • H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
  • H01J 37/12 - Lenses electrostatic

65.

LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, ADAPTABLE PHASE ARRAY ILLUMINATION AND COLLECTOR DEVICES, AND METHOD THEREOF

      
Application Number EP2023083403
Publication Number 2024/132407
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Akbulut, Duygu
  • Van Engelen, Jorn, Paul
  • Setija, Irwan, Dani

Abstract

A system includes a radiation source, a phased array, and a detector. The phased array generates a radiation beam and directs the beam toward a target structure on a substrate. The phased array includes a plurality of optical elements and of waveguides. The plurality of optical elements transmits radiation waves. The plurality of waveguides guides radiation from the radiation source to the plurality of optical elements. A portion of each waveguide of the plurality of waveguides includes a material that adjusts a phase of the radiation waves such that the radiation waves accumulate to form the beam. The optical properties of the material in the waveguides are adjusted in a non-volatile and reversible way while monitoring the beam formed by the optical phased array until the desired beam profile is obtained. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.

IPC Classes  ?

  • G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
  • G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
  • H01Q 3/26 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the distribution of energy across a radiating aperture
  • G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
  • G01S 7/481 - Constructional features, e.g. arrangements of optical elements
  • G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure

66.

RETICLE HANDLER ISOLATION DAMPER ELEMENT

      
Application Number EP2023083406
Publication Number 2024/132409
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Chen, Lien-Sheng
  • Modaresahmadi, Sina
  • Pereira, Andrew, Charles
  • Pei, Yalu
  • Johnson, Richard, John

Abstract

A system includes first and second portions of a lithography system and a damping system located between the first and second portions. The damping system includes a damper holder that holds an X-direction set of dampers and a Y-direction set of dampers.

IPC Classes  ?

67.

AN ACTUATION STAGE, AN ELECTROMAGNET APPARATUS, AND METHOD OF FABRICATION

      
Application Number EP2023083409
Publication Number 2024/132412
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Del Puerto, Santiago E.
  • Burchfiel, Justin, Morrow
  • Chillara, Venkata, Siva, Chaithanya
  • Gaikwad, Bhushan, Shrikant

Abstract

A stage (500) for supporting and moving an object (502) includes an electromagnet (510), first and second support structures (504; 506), a target (508), and a target-side bumper structure. The electromagnet can comprise a core, a wire coil (512), and a core-side bumper affixed to the core. The core, disposed on the first support structure (506), is made from magnetically permeable material. The core is shaped to have poles facing a same direction. The wire coil generates a magnetic field. The second support structure (504) supports and moves the object relative to the first support structure. The target (508) is disposed on the second support structure (504) to actuate the second support structure in response to the magnetic field. The target-side bumper structure is affixed to the target and can collide with the core-side bumper structure to establish a collision avoidance gap between the core and the target. An uncertainty value of the collision avoidance gap is less than 20 microns.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

68.

CHARGED PARTICLE DEVICE AND CHARGED PARTICLE APPARATUS

      
Application Number EP2023084229
Publication Number 2024/132486
Status In Force
Filing Date 2023-12-05
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Smakman, Erwin, Paul
  • Veenstra, Roy, Ramon
  • Ren, Yan

Abstract

The present invention provides a charged particle device for projecting a multi-beam of charged particles towards a sample. The device comprises a plurality of sources configured to emit a respective source beam of charged particles along a respective path of a beam grid, comprising a plurality of charged particle beams, toward the sample. The device further comprises one or more elements in which an array of apertures is defined. The one or more elements respectively comprising a plurality of beam areas assigned to an individual source beam. The one or more elements is configured to operate on the charged particle beams in the beam grids of the individual source beam. Each element is separated from an adjoining element by a spacer, the spacer having at least one aperture positioned to correspond to the position of at least two beam areas.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
  • H01J 37/12 - Lenses electrostatic

69.

IN-SITU CLEANING FOR LITHOGRAPHIC APPARATUS

      
Application Number EP2023086000
Publication Number 2024/132898
Status In Force
Filing Date 2023-12-15
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Koole, Max
  • Nikipelov, Andrey
  • Kvon, Vladimir

Abstract

A photoelectric plate (300) for use in place of a patterning device in a lithographic apparatus, the photoelectric plate comprising: a base layer (301); and a coating (302) provided on the base layer; wherein the coating is configured to convert impinging photons of EUV radiation into free electrons at a higher conversion efficiency than the base layer.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass

70.

CHARGED PARTICLE APPARATUS, METHOD OF PROJECTING CHARGED PARTICLES, METHOD OF ASSESSING A SAMPLE

      
Application Number EP2023086970
Publication Number 2024/133468
Status In Force
Filing Date 2023-12-20
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Rodrigues Mansano, Andre, Luis
  • Slot, Erwin
  • Van Leeuwen, Richard, Michel

Abstract

The present disclosure relates to a charged particular apparatus for projecting a multi-beam of charged particles toward a sample. In one arrangement, a sample support supports a sample. A charged particle-optical device projects beams of a multi-beam of the charged particles along a plurality of paths toward the sample. The device comprises a plurality of charged particle-optical elements that define an objective lens and in which are defined a plurality of apertures along the paths of the beams. At least two of the charged particle-optical elements are configured to be set at different potentials and at least one of the charged particle-optical elements is set at ground potential.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details
  • H01J 37/12 - Lenses electrostatic
  • H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams

71.

OPTICAL SYSTEM

      
Application Number EP2023087162
Publication Number 2024/133608
Status In Force
Filing Date 2023-12-20
Publication Date 2024-06-27
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Goch, Bram, Paul, Theodoor
  • Van Kemenade, Johannes, Marinus
  • Van De Ruit, Kevin

Abstract

An optical system comprises at least one position sensor and adjustable optics and is arranged to receive a radiation beam and to direct the radiation beam to an illumination region. The at least one position sensor is operable to determine a position of part of the optical system. The adjustable optics is configured to control an optical path of the received radiation beam in dependence on the determined 5 position of the part of the optical system. The adjustable optics may be configured to at least partially correct for any variations in a spatial and/or angular distribution of the radiation at the illumination region that result from any deviations in the determined position from a nominal position. The optical system may comprise an illumination system for an imaging apparatus (for example a lithographic apparatus). A corresponding method of providing radiation to an illumination region via an optical 0 system is also claimed.

IPC Classes  ?

  • G02B 27/64 - Imaging systems using optical elements for stabilisation of the lateral and angular position of the image
  • G03F 7/20 - Exposure; Apparatus therefor

72.

CONTROLLING ABERRATION IN AN OPTICAL SYSTEM, A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF

      
Application Number 18556801
Status Pending
Filing Date 2022-03-31
First Publication Date 2024-06-20
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Shome, Krishanu
  • Coston, Scott Douglas
  • Du, Kan

Abstract

A method includes determining optical aberrations of an optical system, identifying an illumination profile that compensates for the optical aberrations of the optical system, and curing a layer of optical cement of an optical device using a modulated energy beam to achieve the identified illumination profile.

IPC Classes  ?

  • G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/16 - Coating processes; Apparatus therefor

73.

SYSTEM AND METHOD FOR DISTRIBUTED IMAGE RECORDING AND STORAGE FOR CHARGED PARTICLE SYSTEMS

      
Application Number 18556886
Status Pending
Filing Date 2023-04-21
First Publication Date 2024-06-20
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Yoon, Myunghoon
  • Tai, Wen-Ting
  • Chai, Yunxiang

Abstract

Apparatuses, systems, and methods for distributed image recording and storage for charged particle tools are provided. In some embodiments, a system may include a first storage of a data center, the first storage configured to store a plurality of images acquired from a plurality of scanning charged particle microscope (SCPM) tools; an image hub server of the data center, the image hub server configured to: receive a first query from an application for a location of a first image generated by a first SCPM tool of the plurality of SCPM tools; determine that the location of the first image is the first storage; and transfer the first image from the first storage to the application for inspection analysis of the first image.

IPC Classes  ?

74.

VACUUM TABLE AND METHOD FOR CLAMPING WARPED SUBSTRATES

      
Application Number EP2023080912
Publication Number 2024/125891
Status In Force
Filing Date 2023-11-07
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Munck, Arjen, Franciscus, Johannes
  • Kramer, Gijs
  • Kamphuis, Arnoud, Gerhard
  • Gijsbertsen, Arjan
  • Broers, Rudolf, Cornelis, Henricus

Abstract

The disclosure provides a vacuum table, comprising: a table having a top surface for supporting a substrate, the top surface being provided with at least two pressure zones, each pressure zone connected to a respective vacuum connector for providing a reduced pressure, at least one of the pressure zones being provided with grooves extending in radial direction across the top surface. Respective pressure zones may comprise corresponding grooves connected to the respective vacuum connector and extending along the top surface, the grooves of each pressure zone at least extending in a circular direction along the top surface. The radial grooves may extend like fingers from a corresponding circular groove. The radial grooves of one pressure zone extend between radial grooves of another pressure zone.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

75.

FLUSHING SYSTEM AND METHOD FOR A LITHOGRAPHIC APPARATUS

      
Application Number EP2023082194
Publication Number 2024/125944
Status In Force
Filing Date 2023-11-17
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Den Akker, Emericus, Antoon, Theodorus
  • Dannenberg, Johan, Frederik
  • Linthorst, Mart, Willem
  • Kalkman, Ivo, Michel
  • Hazari, Syed Aaquib

Abstract

There is provided a flushing system for a lithographic apparatus, said flushing system including a gas outlet configured to choke a flow of gas passing through the gas outlet at a predetermined rate. Also provided is a method of flushing a lithographic apparatus, the method including providing a flow of gas through the lithographic apparatus and operating a gas outlet from the lithographic apparatus such that the flow of gas is choked through the gas outlet.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

76.

APPARATUS AND METHOD FOR ELECTROSTATICALLY CLAMPING A SUBSTRATE

      
Application Number EP2023082815
Publication Number 2024/125995
Status In Force
Filing Date 2023-11-23
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jansen, Maarten, Mathijs, Marinus
  • Van Empel, Tjarko, Adriaan, Rudolf
  • Reijnen, Martinus, Cornelis
  • De Vries, Sjoerd, Frans

Abstract

The disclosure provides an apparatus comprising: at least one substrate table for holding a substrate, the substrate table being provided with an electrostatic clamp for electrostatically clamping the substrate; and at least one reflective surface for reflecting charged particles in a direction away from a front side of the substrate. A method of use comprises the steps of electrostatically clamping at least one substrate table on a substrate table; releasing the clamped substrate; lifting the substrate from the substrate table; and providing at least one reflective surface for reflecting charged particles in a direction away from a front side of the substrate.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

77.

TEMPERATURE MEASUREMENT OF OPTICAL ELEMENTS IN AN OPTICAL APPARATUS

      
Application Number 18286631
Status Pending
Filing Date 2022-03-29
First Publication Date 2024-06-20
Owner ASML Netherland B.V. (Netherlands)
Inventor
  • Bos, Koen Martin Willem Jan
  • Klugkist, Joost André
  • Anand, Anirudh

Abstract

An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.

IPC Classes  ?

  • G01K 11/12 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in colour, translucency or reflectance
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

78.

OPTICAL ELEMENT FOR GENERATION OF BROADBAND RADIATION

      
Application Number 18287160
Status Pending
Filing Date 2022-04-12
First Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Uebel, Patrick Sebastian
  • Pongers, Willem Richard
  • Smeets, Ralph Jozef Johannes Gerardus Anna Maria
  • Abdolvand, Amir
  • Puthankovilakam, Krishnaparvathy

Abstract

A monolithic optical element for generating broadband radiation upon receiving input radiation at an input end of the optical element is disclosed, the optical element including: a hollow core region for guiding the input radiation along a longitudinal axis of the optical element towards an output end of the optical element; a cladding region surrounding the core region along the longitudinal axis and including transversally arranged micro-structures configured to provide non-linear optical behavior to the optical element causing the generation of the broadband radiation; and a supporting region surrounding the cladding region along the longitudinal axis of at least part of the optical element, wherein the supporting region has a transversal dimension which is sufficiently large to render the at least part of the optical element substantially rigid.

IPC Classes  ?

  • G02F 1/365 - Non-linear optics in an optical waveguide structure
  • G02F 1/35 - Non-linear optics

79.

PELLICLE MEMBRANE AND METHOD OF MANUFACTURE

      
Application Number EP2023080443
Publication Number 2024/125883
Status In Force
Filing Date 2023-11-01
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Houweling, Zomer, Silvester
  • Ghiasi Kabiri, Mahnaz
  • Giesbers, Adrianus, Johannes, Maria
  • Jain, Abhinav

Abstract

There is provided a pellicle membrane comprising thermally emissive crystals supported by a matrix, wherein the average thickness of the pellicle membrane is greater than the average grain size of the emissive crystals. Also provided is a pellicle assembly comprising such a pellicle membrane, and a lithographic apparatus comprising such a pellicle membrane or pellicle assembly. Also described is a method manufacturing a pellicle membrane including emissive crystals in a matrix, the method including controlling at least one of the chemical composition of the emissive crystals, morphology of the emissive crystals, and annealing conditions to provide a pellicle membrane having a thickness greater than the average grain size of the emissive crystals.

IPC Classes  ?

  • G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
  • G03F 7/20 - Exposure; Apparatus therefor

80.

A CLAMP AND A METHOD FOR MANUFACTURING THE SAME

      
Application Number EP2023081766
Publication Number 2024/125915
Status In Force
Filing Date 2023-11-14
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Chieda, Michael, Andrew
  • Lipson, Matthew
  • Shemesh, Moshe

Abstract

A method includes bonding a first layer and a second layer of a clamp by heating the first layer and the second layer up to a holding temperature of a least 700 °C, maintaining the first layer and the second layer at the holding temperature during a holding time period, and cooling down the first layer and the second layer after the holding time has elapsed at a cooling rate of a maximum of 20 °C/hour for a cooling time period.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

81.

LITHOGRAPHIC APPARATUS THERMAL CONDITIONING SYSTEM AND METHOD

      
Application Number EP2023082505
Publication Number 2024/125973
Status In Force
Filing Date 2023-11-21
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van De Meerendonk, Remco
  • Swinkels, Milo, Yaro
  • Wijckmans, Maurice, Willem, Jozef, Etiënne
  • Krabben, Ingmar, Gerrit, Willem
  • Van Giessen, Cornelis
  • Janssen, Gerardus, Arnoldus, Hendricus, Franciscus
  • Schapendonk, Markus, Josephus, Cornelis
  • Wu, Long
  • Arora, Sampann
  • Schimmel, Hendrikus, Gijsbertus
  • Feijts, Maurice, Wilhelmus, Leonardus, Hendricus
  • Hoeve, Gert-Jan
  • Pekelder, Sven
  • Vervoordeldonk, Michael, Johannes
  • De Laat, Kim, Johanna, Mechelina

Abstract

A thermal conditioning system is configured to thermally condition an object. The thermal conditioning system comprises a fluid duct configured to be connected to the object and configured to provide a flow of a thermal conditioning fluid to the object The fluid duct comprises a supply duct configured to be connected to the object and to supply the thermal conditioning fluid to the object and a discharging duct 5 configured to be connected to the object and to discharge the thermal conditioning fluid from the object. The supply duct and/or the discharging duct are each provided with at least two silencers arranged in series along the supply duct and along the discharging duct respectively.

IPC Classes  ?

  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors
  • G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors

82.

MODULAR ASSEMBLY

      
Application Number EP2023083383
Publication Number 2024/126032
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Peijster, Jerry, Johannes, Martinus

Abstract

The present disclosure relates to modular assembly for engaging modules of an apparatus together. The assembly comprising two modules configured to be mutually engageable to adjoin each other. The modules each having a body (71; 72) and multiple engagers (81; 82) that are each configured to engage with a corresponding engager (82; 81) of another of the modules and to complete a corresponding verification circuit. Each verification circuit is configured to be closed on engagement of an engager of one of the modules with a corresponding engager of the other of the modules. The engager is configured to be electrically isolated from the body of the one of the two modules, and the corresponding engager is configured to be electrically connected to the body of the other of the two modules. The modules comprise complex elements which are configured to electron-optically or optically interact with other during operation of the apparatus.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details
  • H01J 37/15 - External mechanical adjustment of electron- or ion-optical components
  • H01J 37/16 - Vessels; Containers

83.

PROJECTION SYSTEM CONTROL

      
Application Number EP2023083818
Publication Number 2024/126079
Status In Force
Filing Date 2023-11-30
Publication Date 2024-06-20
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kunnen, Johan, Gertrudis, Cornelis
  • Brouwer, Cornelis, Melchior
  • Smal, Pavel
  • Van Goch, Bram, Paul, Theodoor

Abstract

A method of controlling a projection system during exposure of a substrate by a lithographic apparatus, the method comprising obtaining a measurement signal of a change of a differential pressure across one or more lenses of a projection system of the lithographic apparatus, calculating an imaging error caused by movement of one or more lens elements of the projection system due to the change of measured differential pressure during the exposure, calculating lens element adjustments which compensate for the calculated imaging error, applying the lens element adjustments, identifying which exposure areas of the substrate were exposed during a delay between the change of differential pressure occurring and the lens element adjustments being applied, and storing information of the identified exposure areas together with the calculated imaging error.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

84.

CONNECTION ASSEMBLY

      
Application Number 18550841
Status Pending
Filing Date 2022-02-21
First Publication Date 2024-06-13
Owner ASML Netherlands B.V. (Netherlands)
Inventor Vanderhallen, Ivo

Abstract

There is described a connection assembly (24) for a high-pressure liquid metal supply system used in an EUV light source comprising a monolithic block, wherein the monolithic block includes: at least one connection (21) for connecting to a reservoir (18,19) configured to hold liquid metal: interior passages (25) configured to fluidly connect the at least one connection with at least two liquid metal outlets/inlets (22, 23): at least two freeze valves (15,16,17) configured to block a passage by solidifying liquid metal therein. Also described is a liquid metal storage assembly including such a connection assembly, a lithography apparatus including such a liquid metal storage assembly or such a connection assembly, as well as the use of such assemblies or apparatus in a lithographic apparatus or method.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

85.

AN INSPECTION TOOL, METHOD AND LITHOGRAPHIC APPARATUS

      
Application Number 18571913
Status Pending
Filing Date 2022-05-23
First Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Bhardwaj, Shikhar

Abstract

A tool for assessing a hole property of one or more holes in a component of a lithographic apparatus, the tool including: an assessment substrate; a fluid supply configured to supply a jet of fluid from each of the one or more holes to a first surface of the assessment substrate, wherein the fluid is supplied at a fluid temperature such that the one or more jets of fluid cause local temperature variations in at least part of the assessment substrate; and an infrared sensor configured to sense a temperature distribution of the assessment substrate in dependence on the local temperature variations.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

86.

FLUID HANDLING SYSTEM AND LITHOGRAPHIC APPARATUS

      
Application Number 17641206
Status Pending
Filing Date 2020-08-26
First Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Polet, Theodorus Wilhelmus
  • Steffens, Koen
  • Van Der Ham, Ronald
  • Pieterse, Gerben
  • Eummelen, Erik Henricus Egidius Catharina
  • Fahrni, Francis

Abstract

A fluid handling system for wetting a substrate irradiated by radiation. The fluid handling system include a first device to confine a first liquid to a first space between the first device and the substrate. The first device includes a first liquid supply member to provide the first liquid to the first space and an extraction member to remove liquid. The fluid handling system further includes a second device including a second liquid supply member to provide a second liquid to a second space between the second device and the substrate, wherein there is a gap on the surface of the substrate between the first and second liquids. The fluid handling system is configured to provide the second liquid to the second space without removing any liquid from the second space to form a liquid layer, and is configured to provide the first and second liquids on the substrate simultaneously.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/20 - Exposure; Apparatus therefor

87.

CONTAMINATION CONTROL

      
Application Number EP2023080091
Publication Number 2024/120701
Status In Force
Filing Date 2023-10-27
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Nikipelov, Andrey
  • Van De Kerkhof, Marcus, Adrianus
  • Gool, Elmar, Leon
  • Kvon, Vladimir
  • Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
  • Hossain, Md Tahmid

Abstract

A lithographic patterning device contamination control system comprising a support structure configured to support a patterning device, and an electron beam source configured to emit a beam of electrons such that at least part of the beam is incident on a patterned face of a patterning device supported by the support structure during EUV exposure.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

88.

PHASE GENERATED CARRIER INTERROGATOR AND ASSOCIATED PHASE GENERATED CARRIER INTERROGATION METHOD

      
Application Number EP2023081311
Publication Number 2024/120734
Status In Force
Filing Date 2023-11-09
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Ikkink, Teunis, Jan

Abstract

Disclosed is a phase generated carrier interrogator comprising: one or more interferometers, each interferometer operable to receive modulated radiation and to generate a respective interferometer signal comprising a phase of interest induced by a measurand, each said interferometer signal also comprising a periodic phase modulation induced by said modulated radiation, wherein the periodic phase modulation comprises an amplitude described by a respective modulation index for each interferometer; at least one detector operable to detect each interferometer signal; and a signal processing module. The signal processing module is operable to: estimate the modulation index respectively for each interferometer, obtain a respective estimated modulation index for each interferometer; demodulate each interferometer signal using its respective estimated modulation index to estimate a respective phase of interest from each interferometer signal thereby obtaining a respective estimated phase of interest value for each interferometer.

IPC Classes  ?

  • G01B 9/02004 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
  • G01B 9/02 - Interferometers

89.

CONTROLLED DROPLET GENERATOR NOZZLE ENVIRONMENT TO IMPROVE RELIABILITY

      
Application Number EP2023082754
Publication Number 2024/120835
Status In Force
Filing Date 2023-11-22
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Rollinger, Bob
  • Newton, Eric, Lamar
  • Rajyaguru, Chirag
  • Govindaraju, Abhiram, Lakshmi Ganesh
  • Ershov, Alexander, Igorevich
  • Vaschenko, Georgiy, Olegovich

Abstract

Disclosed is an apparatus for and method of controlling an environment around the nozzle orifice of a droplet generator in a source system for generating extreme ultraviolet (EUV) radiation in which an amount of oxygen-containing gas in the nozzle orifice environment is controlled to reduce the formation of oxides that could potentially interfere with operation of the droplet generator.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

90.

VACUUM CHAMBERS FOR COLD FIELD EMISSION ELECTRON SOURCES

      
Application Number EP2023083239
Publication Number 2024/120878
Status In Force
Filing Date 2023-11-27
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Zhang, Shun
  • Fan, Zheng
  • Gao, Ru-Xuan

Abstract

An electron source assembly with an improved vacuum chamber for an electron source is provided. The electron source assembly includes an electron source having an emitter tip where electrons are generated. The electron source also includes a vacuum chamber which is configured to enclose the electron source and comprises an outgassing barrier coating layer on an interior surface of the vacuum chamber. The vacuum chamber has undergone a heat treatment in a hydrogen environment and a gas removal treatment under a high vacuum and a high temperature. The electron source assembly also includes a vacuum pump connected to the vacuum chamber and configured to pump down the vacuum chamber to a pressure lower than 1.0 × 10-11 Torr.

IPC Classes  ?

  • H01J 9/39 - Degassing vessels
  • H01J 7/18 - Means for absorbing or adsorbing gas, e.g. by gettering
  • H01J 37/16 - Vessels; Containers
  • H01J 3/02 - Electron guns
  • H01J 37/073 - Electron guns using field emission, photo emission, or secondary emission electron sources

91.

ELECTRON-OPTICAL STACK, MODULE, ASSESSMENT APPARATUS, METHOD OF MANUFACTURING AN ELECTRON-OPTICAL STACK

      
Application Number EP2023083379
Publication Number 2024/120896
Status In Force
Filing Date 2023-11-28
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Langen, Johannes, Cornelis, Jacobus
  • Looman, Bram, Albertus
  • Mudretsov, Dmitry
  • Del Tin, Laura

Abstract

The present disclosure relates to an electron-optical stack for manipulating one or more charged particle beams and associated apparatus and methods. In one arrangement, a plurality of electron-optical plates have major surfaces on opposite sides of the plates. The plates define a set of channels configured to be aligned along a beam path of a charged particle beam to allow the charged particle beam to pass through the plates via the channels. Each channel defines apertures in the two major surfaces of the plate that defines the channel. The apertures have different shapes from each other. The plates are oriented such that the apertures comprise one or more matching aperture pairs along the beam path. The or each matching aperture pair consists of apertures having the same shape defined in adjacent major surfaces of adjacent plates.

IPC Classes  ?

  • H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
  • H01J 37/12 - Lenses electrostatic

92.

METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES

      
Application Number 18437564
Status Pending
Filing Date 2024-02-09
First Publication Date 2024-06-13
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ten Haaf, Gijs
  • Mos, Everhardus Cornelis
  • Kattouw, Hans Erik
  • Brinkhof, Ralph

Abstract

Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

93.

IMPROVED RETICLE AND RETICLE BLANK

      
Application Number EP2023080467
Publication Number 2024/120705
Status In Force
Filing Date 2023-11-01
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jochemsen, Marinus
  • Rademaker, Justin
  • Bajonero Canonico, Emilio

Abstract

There is provided a reticle or a reticle blank comprising a low deformation material, wherein the reticle or reticle blank material has a Zero Crossing Temperature (ZCT) profile, and a ZCT slope profile, wherein at least one of the ZCT profile and the ZCT slope profile is non-uniform. Also provided is a method of mitigating non-correctable deformations in a reticle or reticle blank, the method including providing a reticle or reticle blank having at least one of a Zero Crossing Temperature (ZCT) profile and a ZCT slope profile which is non-uniform across the reticle or reticle blank.

IPC Classes  ?

  • G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
  • G03F 1/50 - Mask blanks not covered by groups ; Preparation thereof
  • G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
  • G03F 7/20 - Exposure; Apparatus therefor

94.

SUPERCONTINUUM RADIATION SOURCE

      
Application Number EP2023080777
Publication Number 2024/120709
Status In Force
Filing Date 2023-11-06
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Abdolvand, Amir
  • Travers, John, Colin
  • Ni, Yongfeng
  • Sajadi Hezaveh, Mohsen

Abstract

Disclosed is a broadband radiation source for generating output broadband radiation, comprising a plurality of supercontinuum generation stages arranged in series, each the supercontinuum generation stage comprising a respective nonlinear generation element. The plurality of supercontinuum generation stages comprises at least a first supercontinuum generation stage and a second supercontinuum generation stage, the second supercontinuum generation stage succeeding the first supercontinuum generation stage in the series. A damage tolerance of a first nonlinear generation element comprised within the first supercontinuum generation stage is greater than a damage tolerance of at least a second nonlinear generation element comprised within the second supercontinuum generation stage.

IPC Classes  ?

  • G02F 1/35 - Non-linear optics
  • G02F 1/365 - Non-linear optics in an optical waveguide structure

95.

SYSTEMS AND METHODS FOR SEQUENTIAL AND PARALLEL OPTICAL DETECTION OF ALIGNMENT MARKS

      
Application Number EP2023081365
Publication Number 2024/120738
Status In Force
Filing Date 2023-11-09
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Beukman, Arjan, Johannes, Anton
  • Bijnen, Franciscus, Godefridus, Casper

Abstract

A sensor apparatus includes a sensor array and a metrology stage coupled to the sensor array. The sensor array includes a plurality of sensors. Each sensor of the sensor array is configured to illuminate radiation to a diffraction target (204) on a substrate (202) and detect a signal beam (290) including diffraction order sub-beams reflected from the diffraction target. The metrology stage is configured to move the sensor array relative to the substrate. The sensor apparatus is configured to measure a plurality of diffraction targets on the substrate at a rate based on a density of the plurality of sensors relative to the plurality of diffraction targets.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

96.

DISPERSION ENGINEERED BEAM MODIFIER FOR A METROLOGY SYSTEM

      
Application Number EP2023081759
Publication Number 2024/120765
Status In Force
Filing Date 2023-11-14
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jahani, Saman
  • Rezvani Naraghi, Roxana

Abstract

A metrology system is described. Metasurfaces are used to replace (or to augment) an existing objective lens to focus radiation such as light, tune a focal length, and/or correct aberrations in the metrology system. A metasurface is configured to receive a diffracted incident radiation beam from a radiation source, with the diffracted incident radiation beam having a known wavelength range, and transmit separate narrower band sub-beams of radiation having a modified amplitude, phase, and/or polarization in comparison to the diffracted incident radiation. The metasurface comprises different sub-portions configured to transmit the separate narrower band sub-beams of radiation. The different sub-portions are configured for different non-overlapping radiation wavelength bandwidths within the known wavelength range.

IPC Classes  ?

  • G02B 1/00 - Optical elements characterised by the material of which they are made; Optical coatings for optical elements
  • G02B 27/10 - Beam splitting or combining systems
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

97.

DETERMINING A FOCUS POSITION FOR IMAGING A SUBSTRATE WITH AN INTEGRATED PHOTONIC SENSOR

      
Application Number EP2023081762
Publication Number 2024/120766
Status In Force
Filing Date 2023-11-14
Publication Date 2024-06-13
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jahani, Saman
  • Rezvani Naraghi, Roxana
  • Guevara Torres, Raul, Andres
  • Granados-Baez, Marissa
  • Sahin, Ezgi

Abstract

The metrology system(s) and method(s) described herein eliminate the need for a separate focus branch often used in prior metrology systems to determine a focus position for imaging a substrate. Instead of using a separate focus branch, an integrated photonic sensor is used to determine the focus position. The integrated photonic sensor is based on apodized grating couplers where, by changing a grating period and/or duty cycle, the amplitude and the phase of the grating coupler mode is engineered to have an optimum coupling efficiency for a specific defocus (or initial / known focus position). A coupling efficiency is determined between an emitting grating and a receiving grating based on emitted radiation with a certain amplitude and phase configured for a known position relative to a substrate, and reflected radiation received from the substrate. A focus position is determined based on the coupling efficiency and the known position.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

98.

METHOD OF PATTERN SELECTION FOR A SEMICONDUCTOR MANUFACTURING RELATED PROCESS

      
Application Number 18278881
Status Pending
Filing Date 2022-02-28
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Hamouda, Ayman

Abstract

A method and apparatus for selecting patterns for training or calibrating models related to semiconductor manufacturing. The method includes obtaining a first set of patterns; representing each pattern of the first set of patterns in a representation domain, the representation domain corresponding to electromagnetic functions; and selecting a second set of patterns from the first set of patterns based on the representation domain.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G06F 30/39 - Circuit design at the physical level
  • G06N 3/0464 - Convolutional networks [CNN, ConvNet]
  • G06N 20/00 - Machine learning

99.

MEASURING APPARATUS AND METHOD FOR ROUGHNESS AND/OR DEFECT MEASUREMENT ON A SURFACE

      
Application Number 18279030
Status Pending
Filing Date 2022-03-03
First Publication Date 2024-06-06
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Von Finck, Alexander
  • Halm, Simon
  • Markel, Ingo Juergen
  • Neumann-Röbisch, Maciej

Abstract

A measuring apparatus has at least two radiation sources arranged to illuminate a measuring region of a surface of a sample, the at least two sources configured to illuminate the measuring region along at least two illumination beam paths at different angles of incidence relative to a surface normal of the surface, a detector device configured to detect at least two scattered radiation images of surface sections in the illuminated measuring region at a predetermined viewing angle relative to the surface normal of the surface, portions of the scattered radiation received by the detector device, which portions are formed in each case by the illumination in one of the illumination beam paths, in each case having a common spatial frequency, and an evaluation device configured to determine at least one roughness feature of the surface sections from the at least two scattered radiation images.

IPC Classes  ?

  • G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
  • G01N 21/47 - Scattering, i.e. diffuse reflection
  • G01N 21/88 - Investigating the presence of flaws, defects or contamination
  • G01N 21/94 - Investigating contamination, e.g. dust

100.

SYSTEM AND METHOD FOR DETERMINING LOCAL FOCUS POINTS DURING INSPECTION IN A CHARGED PARTICLE SYSTEM

      
Application Number 18284824
Status Pending
Filing Date 2022-03-04
First Publication Date 2024-06-06
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Wang, Te-Sheng
  • Wang, Szu-Po
  • Liu, Tsung-Hsien
  • Hsieh, Yung-Huan

Abstract

Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.

IPC Classes  ?

  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  1     2     3     ...     70        Next Page