A novel functional panel that is highly convenient or highly reliable is provided. The functional panel includes a first pixel. The first pixel includes a first element, a color conversion layer, and a first functional layer. The first functional layer is positioned between the first element and the color conversion layer. The first element has a function of emitting light and contains gallium nitride. The color conversion layer has a function of converting the color of light emitted from the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region positioned between the pixel circuit and the first element, and has an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film and is electrically connected to the first element through the opening.
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED]
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a first electrode, a second electrode, and a first layer. The first layer is positioned between the first electrode and the second electrode. The first layer includes a light-emitting material, a first organic compound, and a first material. The light-emitting material has a function of emitting fluorescent light. The absorption spectrum of the light-emitting material has the longest-wavelength edge at a first wavelength. The first organic compound has a function of converting triplet excitation energy into light emission. The spectrum of the emitted light has the shortest-wavelength edge at a second wavelength. The second wavelength is positioned at a wavelength shorter than the first wavelength. The first organic compound includes a first substituent R1. The first substituent R1 is any of an alkyl group, a substituted or unsubstituted cycloalkyl group, and a trialkylsilyl group. The first material has a function of emitting delayed fluorescent light at room temperature. The difference between the HOMO level and the LUMO level of the first material is smaller than the difference between the HOMO level and the LUMO level of the first organic compound.
A display device with both high display quality and high resolution is provided. The display device includes a light-emitting element and a connection portion. The connection portion is provided along an outer periphery of a display region where the light-emitting element is provided. The light-emitting element includes a pixel electrode, a first EL layer over the pixel electrode, a second EL layer over the first EL layer, and a common electrode over the second EL layer. The connection portion includes a connection electrode, a second EL layer over the connection electrode, and the common electrode over the second EL layer. The second EL layer includes a first region in contact with the connection electrode and a second region in contact with the common electrode. The area of a region where the first region and the second region overlap with each other in a top view is greater than or equal to 40000 square micrometers. The second EL layer includes a region where the film thickness is greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second EL layer contains a substance with a high electron-injection property.
H10K 59/80 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe - Détails de structure
H10K 50/13 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] spécialement adaptées à l'émission de lumière multicolore, p. ex. à l'émission de lumière blanche comprenant des couches EL empilées dans une unité EL
H10K 50/17 - Couches d'injection des porteurs de charge
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
4.
DISPLAY DEVICE, METHOD FOR MANUFACTURING DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE
A highly reliable display device with high display quality is provided. The display device includes a first light-emitting element, a second light-emitting element provided to be adjacent to the first light-emitting element, a first protective layer, a second protective layer, and an insulating layer. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer is provided over the first pixel electrode, and the second EL layer is provided over the second pixel electrode. The first protective layer includes a region in contact with the side surface of the first EL layer, and the second protective layer includes a region in contact with the side surface of the second EL layer. The insulating layer is provided between the first protective layer and the second protective layer. The common electrode is provided over the first EL layer, over the second EL layer, over the first protective layer, over the second protective layer, and over the insulating layer.
H10K 50/17 - Couches d'injection des porteurs de charge
H10K 50/18 - Couches de blocage des porteurs de charge
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/80 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe - Détails de structure
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
5.
DISPLAY APPARATUS, MANUFACTURING METHOD OF THE DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE
A high-resolution or high-definition display apparatus is provided. The display apparatus includes a plurality of light-emitting elements, a light-receiving element, a coloring layer, and a first sidewall. The light-emitting elements include a first pixel electrode, a first light-emitting layer over the first pixel electrode, an intermediate layer over the first light-emitting layer, and a common electrode over a second light-emitting layer over a first intermediate layer. The first pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are divided for each light-emitting element. The coloring layer is provided to include a region overlapping with the light-emitting element. The light-receiving element includes a second pixel electrode, a light-receiving layer over the second pixel electrode, and a common electrode over the light-receiving layer. The first sidewall is provided to cover at least part of a side surface of the first pixel electrode, a side surface of the first light-emitting layer, a side surface of the first intermediate layer, and a side surface of the second light-emitting layer. A second sidewall is provided to cover at least part of a side surface of the second pixel electrode and a side surface of the light-receiving layer.
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor, a capacitor, and a first insulating layer. The first insulating layer is provided over a first conductive layer and a second conductive layer and includes a first opening reaching the first conductive layer and a second opening reaching the second conductive layer. The transistor is a vertical transistor in which a channel formation region is provided along the side wall of the first opening. The capacitor is a vertical capacitor in which a pair of electrodes and a dielectric are provided along the side surface of the second opening.
A light-emitting device with high heat resistance in a manufacturing process is to be provided. The light-emitting device includes a second electrode over a first electrode with an EL layer sandwiched therebetween; the EL layer includes at least a light-emitting layer, a first electron-transport layer, and a second electron-transport layer; the first electron-transport layer is over the light-emitting layer; the light-emitting device includes an insulating layer in contact with a side surface of the light-emitting layer and a side surface of the first electron-transport layer; the second electron-transport layer is over the first electron-transport layer; the insulating layer is positioned between the second electron-transport layer and the side surface of the light-emitting layer and the side surface of the first electron-transport layer; and the first electron-transport layer contains a heteroaromatic compound including at least one heteroaromatic ring and an organic compound different from the heteroaromatic compound.
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H10K 59/124 - Couches isolantes formées entre les éléments TFT et les éléments OLED
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
9.
High Molecular Compound, Light-Emitting Device, Light-Emitting Apparatus, Electronic Device, and Lighting Device
A novel high molecular compound is provided. The high molecular compound includes a repeating unit. The repeating unit has a fluorenediyl group, a hole-transport skeleton, and an electron-transport skeleton. The hole-transport skeleton is bonded to the fluorenediyl group through a substituted or unsubstituted first arylene group. The electron-transport skeleton is bonded to the fluorenediyl group through a substituted or unsubstituted second arylene group. In an excited state, intramolecular charge transfer occurs between the hole-transport skeleton and the electron-transport skeleton.
H10K 85/60 - Composés organiques à faible poids moléculaire
C07D 491/048 - Systèmes condensés en ortho avec un seul atome d'oxygène comme hétéro-atome du cycle contenant de l'oxygène le cycle contenant de l'oxygène étant à cinq chaînons
10.
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.
H10K 50/805 - Dispositifs organiques émetteurs de lumière - Détails de structure Électrodes
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 71/50 - Formation de dispositifs par l'assemblage de deux substrats, p. ex. par des techniques de laminage
A novel electronic device is provided. An electronic device capable of executing various types of processing by simple operation is provided. An electronic device with a high security level is provided. The electronic device includes a control portion, a detection portion, and a memory portion. The detection portion has a function of detecting touch operation and a function of obtaining fingerprint data on a touching finger. The memory portion has a function of retaining fingerprint data on a plurality of finger registered in advance. The control portion has functions of comparing the fingerprint data on the touching finger obtained by the detection portion with the fingerprint data on the plurality of fingers when the detection portion detects touch operation, and executing processing corresponding to the fingerprint data on the touching finger or a combination of the touch operation and the fingerprint data on the touching finger when the fingerprint data on the touching finger matches any one piece of the fingerprint data on the plurality of fingers.
An electronic device capable of detecting a difference in the way of touch is provided. An electronic device capable of detecting a difference in the way of touch with a small number of components is provided. An electronic device capable of executing various types of processes with simple operation is provided. The electronic device includes a control portion and a display portion. The display portion has a function of displaying an image on a screen and includes a detection portion. The detection portion has a function of detecting a touch operation and a function of imaging, at least twice, a detection object touching the screen. The control portion has a function of calculating a difference between the area of the detection object in first imaging and the area of the detection object in second imaging to execute a different process depending on whether the difference is larger or smaller than a reference.
G06V 40/50 - Traitement de données biométriques ou leur maintenance
H10K 65/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière et au moins un composant organique sensible aux rayonnements, p. ex. des optocoupleurs organiques
A novel organic compound is provided. Alternatively, an organic compound that exhibits light emission with favorable chromaticity is provided. Alternatively, an organic compound that exhibits blue light emission with favorable chromaticity is provided. Alternatively, an organic compound with favorable emission efficiency is provided. Alternatively, an organic compound having a high carrier-transport property is provided. Alternatively, an organic compound with favorable reliability is provided. An organic compound including at least one amino group in which any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, and a substituted or unsubstituted carbazolyl group is boneded to any one of a substituted or unsubstituted naphthobisbenzofuran skeleton, a substituted or unsubstituted naphthobisbenzothiophene skeleton, and a substituted or unsubstituted naphthobenzofuranobenzothiophene skeleton is provided.
C07D 491/048 - Systèmes condensés en ortho avec un seul atome d'oxygène comme hétéro-atome du cycle contenant de l'oxygène le cycle contenant de l'oxygène étant à cinq chaînons
C07D 495/00 - Composés hétérocycliques contenant dans le système condensé au moins un hétérocycle comportant des atomes de soufre comme uniques hétéro-atomes du cycle
H10K 85/60 - Composés organiques à faible poids moléculaire
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a first light-emitting device, a second light-emitting device, a partition, a first protective layer, and a second protective layer. The first light-emitting device includes a first electrode, a second electrode, and a first layer, and the first layer is interposed between the electrodes. The first layer includes a first material having a hole-transport property and a first substance having an electron-accepting property, and the first protective layer is in contact with the second electrode. The second light-emitting device includes a third electrode, a fourth electrode, and a second layer, and the second layer is interposed between the electrodes. The second layer includes the first material having a hole-transport property and the first substance having an electron-accepting property, and the second layer includes a first gap between the second layer and the first layer. The second protective layer includes a second gap between the second protective layer and the first protective layer. The second gap overlaps with the first gap, and the second protective layer is in contact with the fourth electrode. The partition overlaps with the first gap and the second gap.
H10K 59/90 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/80 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe - Détails de structure
H10K 71/60 - Formation de régions ou de couches conductrices, p. ex. d’électrodes
16.
OPTICAL DEVICE, DISPLAY APPARATUS, AND ELECTRONIC DEVICE
An optical device with favorable characteristics is provided. An optical device with low driving voltage is provided. An optical device with low power consumption is provided. The optical device includes a first electrode, a second electrode, an active layer, and a carrier-transport layer. The active layer is positioned between the first electrode and the second electrode. The active layer contains a first organic compound and a second organic compound, the first organic compound is represented by General Formula (G1), and the second organic compound is represented by General Formula (G2-1). The carrier-transport layer is positioned between the second electrode and the active layer and the thickness of the carrier-transport layer is greater than or equal to 10 nm and less than or equal to 300 nm.
A light-emitting apparatus can be provided at low cost. The light-emitting apparatus includes a plurality of partitions formed over an insulating surface and extending in a first direction, a plurality of pixel electrodes each having an island shape formed over the insulating surface, an EL layer formed over the pixel electrodes, and a second electrode formed over the EL layer. The partition has an insulating property, the pixel electrodes that are aligned in the first direction are positioned column by column between adjacent partitions in the plurality of partitions, and the EL layer is in contact with the insulating surface between the pixel electrodes adjacent to each other in the first direction in the pixel electrodes aligned in the first direction.
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
H10K 59/80 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe - Détails de structure
An object of one embodiment of the present invention is to provide a novel display device or a display system. Another object of one embodiment of the present invention is to provide a display device or a display system which can be manufactured at low cost and can provide various functions to a user. A pixel includes light-emitting elements whose emission colors are different from each other, a light-emitting element IR, a light-receiving element PS, and an infrared light sensor IRS. An image of a fundus of an eye is captured using the light-emitting element emitting an infrared light as a light source, and imaging is performed by the light-receiving element IRS. A substrate of a display panel is manufactured using a single crystal Si substrate capable of microfabrication and higher integration.
H10K 59/65 - OLED intégrées avec des capteurs d'images inorganiques
A61B 3/00 - Appareils pour l'examen optique des yeux; Appareils pour l'examen clinique des yeux
A61B 3/12 - Appareils pour l'examen optique des yeux; Appareils pour l'examen clinique des yeux du type à mesure objective, c. à d. instruments pour l'examen des yeux indépendamment des perceptions ou des réactions du patient pour examiner le fond de l'œil, p.ex. ophtalmoscopes
A61B 3/14 - Dispositions spécialement adaptées à la photographie de l'œil
H10K 59/90 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière
H10K 59/95 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière comprenant uniquement des éléments organiques émetteurs de lumière
19.
Light-Emitting Device, Light-Emitting Apparatus, Electronic Appliance, and Lighting Device
A light-emitting device with high heat resistance in a manufacturing process is to be provided. The light-emitting device includes a second electrode over a first electrode with an EL layer sandwiched therebetween; the EL layer includes at least a light-emitting layer, a first electron-transport layer, a second electron-transport layer, and an electron-injection layer; the first electron-transport layer is over the light-emitting layer; the second electron-transport layer is over the first electron-transport layer; the light-emitting device includes an insulating layer in contact with a side surface of the light-emitting layer, a side surface of the first electron-transport layer, and a side surface of the second electron-transport layer; the electron-injection layer is over the second electron-transport layer; the insulating layer is positioned between the electron-injection layer and the side surface of the light-emitting layer, the side surface of the first electron-transport layer, and the side surface of the second electron-transport layer; and the second electron-transport layer contains a heteroaromatic compound including at least one heteroaromatic ring and an organic compound different from the heteroaromatic compound.
A novel display device is provided. The display device includes a plurality of pixels each including a light-emitting device, a sensor device, a first circuit device, and a second circuit device. The light-emitting device and the sensor device are provided in a first layer. The first circuit device is provided in a second layer. The second circuit device is provided in a third layer. The light-emitting device includes a lower electrode, an upper electrode, and a light-emitting layer provided between the lower electrode and the upper electrode. The sensor device has a function of detecting light emitted from the light-emitting device. The first circuit device has a function of driving the light-emitting device or the sensor device. The second circuit device has a function of performing an arithmetic operation based on information output from the first circuit device. The first layer is provided over the second layer. The second layer is provided over the third layer.
A secondary battery control system that conducts abnormality detection while predicting other parameters (internal resistance, SOC, and the like) with high accuracy is provided. A difference between an observation value (voltage) at a certain point in time and a voltage that is estimated using a prior-state variable is sensed. A threshold voltage is set in advance, and from the voltage difference that is sensed, a sudden abnormality, specifically a micro-short circuit or the like is detected. Furthermore, it is preferable that detection be performed by using a neural network to learn data on voltage difference in a time series and determine abnormality or normality.
G01R 31/3842 - Dispositions pour la surveillance de variables des batteries ou des accumulateurs, p.ex. état de charge combinant des mesures de tension et de courant
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
G01R 31/367 - Logiciels à cet effet, p.ex. pour le test des batteries en utilisant une modélisation ou des tables de correspondance
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p.ex. le niveau ou la densité de l'électrolyte
A small light-emitting device is provided. A light-emitting device which is less likely to produce a shadow is provided. A structure including a switching circuit for supplying a pulsed constant current and a light-emitting panel supplied with the pulsed constant current has been conceived.
H04N 23/63 - Commande des caméras ou des modules de caméras en utilisant des viseurs électroniques
H04N 23/74 - Circuits de compensation de la variation de luminosité dans la scène en influençant la luminosité de la scène à l'aide de moyens d'éclairage
H05B 44/00 - Circuits pour faire fonctionner des sources lumineuses électroluminescentes
H10K 50/814 - Anodes combinées à des électrodes auxiliaires, p. ex. une couche d'ITO combinée à des lignes métalliques
H10K 50/858 - Dispositifs pour extraire la lumière des dispositifs comprenant des moyens de réfraction, p. ex. des lentilles
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
G11C 11/405 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c. à d. cellules dynamiques avec régénération de la charge commune à plusieurs cellules de mémoire, c. à d. rafraîchissement externe avec trois portes à transfert de charges, p.ex. transistors MOS, par cellule
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/46 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
H01L 21/8258 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une combinaison de technologies couvertes par les groupes , , ou
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H10B 41/10 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la configuration vue du dessus
H10B 41/20 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur
H10B 41/30 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire
H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p.ex. NON-ET
H10B 41/70 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes la grille flottante étant une électrode partagée par plusieurs éléments
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
G11C 11/405 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c. à d. cellules dynamiques avec régénération de la charge commune à plusieurs cellules de mémoire, c. à d. rafraîchissement externe avec trois portes à transfert de charges, p.ex. transistors MOS, par cellule
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/46 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
H01L 21/8258 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une combinaison de technologies couvertes par les groupes , , ou
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H10B 41/10 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la configuration vue du dessus
H10B 41/20 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur
H10B 41/30 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire
H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p.ex. NON-ET
H10B 41/70 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes la grille flottante étant une électrode partagée par plusieurs éléments
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
G11C 11/405 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c. à d. cellules dynamiques avec régénération de la charge commune à plusieurs cellules de mémoire, c. à d. rafraîchissement externe avec trois portes à transfert de charges, p.ex. transistors MOS, par cellule
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/46 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes
H01L 21/8258 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une combinaison de technologies couvertes par les groupes , , ou
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H10B 41/10 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la configuration vue du dessus
H10B 41/20 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur
H10B 41/30 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire
H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p.ex. NON-ET
H10B 41/70 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes la grille flottante étant une électrode partagée par plusieurs éléments
26.
DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE
A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode. The first layer and the second layer use a material having a first spin density and a material having a second spin density higher than the first spin density, respectively, each observed with an electron spin resonance (ESR) spectrometer when the material is in a film state.
H10K 59/80 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe - Détails de structure
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
A method of manufacturing a high-resolution display apparatus having a light sensing function is provided. The method for manufacturing a display apparatus includes: a first step of forming a first pixel electrode and a second pixel electrode; a second step of depositing a light-emitting and light-receiving film over the first pixel electrode and the second pixel electrode; a third step of depositing a first sacrificial film covering the light-emitting and light-receiving film; a fourth step of etching the first sacrificial film and the light-emitting and light-receiving film to form a light-emitting and light-receiving layer and a first sacrificial layer over the light-emitting and light-receiving layer and to expose the second pixel electrode; a fifth step of depositing an EL film over the first sacrificial layer and over the second pixel electrode; a sixth step of depositing a second sacrificial film covering the EL film; a seventh step of etching the second sacrificial film and the EL film to form an EL layer and a second sacrificial layer over the EL layer; an eighth step of removing the first sacrificial layer and the second sacrificial layer and exposing the light-emitting and light-receiving layer and the EL layer; and a ninth step of forming a common electrode covering the light-emitting and light-receiving layer and the EL layer.
To reduce power consumption of a display device with the use of a simple structure and a simple operation. The display device includes an input device. Input of an image signal to a driver circuit is controlled in accordance with an image operation signal output from the input device. Specifically, input of image signals at the time when the input device is not operated is less frequent than that at the time when the input device is operated. Accordingly, display degradation (deterioration of display quality) caused when the display device is used can be prevented and power consumed when the display device is not used can be reduced.
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having both a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving element has a function of receiving the second light and converting the second light into an electric signal. The first light includes visible light, and the second light includes infrared light.
A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.
G06F 1/16 - TRAITEMENT ÉLECTRIQUE DE DONNÉES NUMÉRIQUES - Détails non couverts par les groupes et - Détails ou dispositions de structure
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
H01M 10/42 - Procédés ou dispositions pour assurer le fonctionnement ou l'entretien des éléments secondaires ou des demi-éléments secondaires
H01M 10/613 - Refroidissement ou maintien du froid
H02J 50/20 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence
A novel material and a transistor using a novel material are provided. A composite oxide includes at least two regions, one of which includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu), and the other of which includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). The proportion of the element M1 to In, Zn, and the element M1 in the region including the element M1 is less than that of the element M2 to In, Zn, and the element M2 in the region including the element M2. In an analysis of the composite oxide by X-ray diffraction, the diffraction pattern result in the X-ray diffraction is asymmetric with the angle at which the peak intensity of X-ray diffraction is detected as the symmetry axis.
A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p.ex. marques de repérage, schémas de test
34.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
35.
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, a transistor, and a first insulating layer. The capacitor includes first and second conductive layers and a second insulating layer. The second insulating layer is in contact with a side surface of the first conductive layer, and the second conductive layer covers at least part of the side surface of the first conductive layer with the second insulating layer therebetween. The transistor includes third to fifth conductive layers, a semiconductor layer, and a third insulating layer. The third conductive layer is in contact with a top surface of the first conductive layer. The first insulating layer is provided over the third conductive layer, and the fourth conductive layer is provided over the first insulating layer. The first insulating layer and the fourth conductive layer include an opening portion reaching the third conductive layer. The semiconductor layer is in contact with the third and fourth conductive layers. The semiconductor layer includes a region positioned inside the opening portion. Over the semiconductor layer, the third insulating layer and the fifth conductive layer are provided in this order so as to each include a region positioned inside the opening portion.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
38.
Display Panel, Display Device, Input/Output Device, and Data Processing Device
A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, a first functional layer, and a second functional layer. The display region includes a pixel, and the pixel includes a display element and a pixel circuit. The first functional layer includes the pixel circuit, a scan line, and a first connection portion. The display element is electrically connected to the pixel circuit, and the pixel circuit is electrically connected to the scan line. The second functional layer includes a region overlapping with the first functional layer, the second functional layer includes a driver circuit and a wiring, and the driver circuit is provided so that the pixel circuit is positioned between the driver circuit and the display element. The wiring is electrically connected to the scan line at the first connection portion, and the wiring is electrically connected to the driver circuit.
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
H10K 50/86 - Dispositions pour améliorer le contraste, p. ex. en empêchant la réflexion de la lumière ambiante
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
A sturdy electronic device is provided. A reliable electronic device is provided. A novel electronic device is provided. An electronic device includes a first board, a second board, a display portion having flexibility, and a power storage device having flexibility. The first board and the second board face each other. The display portion and the power storage device are provided between the first board and the second board. The display portion includes a first surface facing the power storage device. The first surface includes a first region not fixed to the power storage device. The first region overlaps with a display region of the display portion.
Provided is a high-resolution or high-definition display apparatus. The display apparatus includes a first light-emitting element, a second light-emitting element, and a sidewall. The first and second light-emitting elements each include a pixel electrode, a first light-emitting layer over the pixel electrode, an intermediate layer over the first light-emitting layer, a second light-emitting layer over the intermediate layer, and a common electrode over the second light-emitting layer. That is, the first and second light-emitting elements can have tandem structures. The pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are separately provided between the light-emitting elements. The first light-emitting element and the second light-emitting element are adjacent to each other, and the sidewall is provided between the first light-emitting element and the second light-emitting element. The sidewall is provided to cover at least part of a side surface of the pixel electrode.
To support preparation of a document with consistency. First document data and second document data are received, the first document data is divided into a plurality of first blocks, the second document data is divided into a plurality of second blocks, a plurality of first combinations each including corresponding first and second blocks are determined, and of the plurality of first combinations, one or more second combinations with a difference between the corresponding first and second blocks are shown, any one of the plurality of first blocks included in the second combinations is received as a first designated block, the second block corresponding to the first designated block is received as a second designated block, and of the first combinations, a third combination in which presence or absence of establishment of textual entailment between the first designated block and the first block is different from presence or absence of establishment of textual entailment between the second designated block and the second block is shown.
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.
H01L 27/07 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive les composants ayant une région active en commun
H01G 4/10 - Diélectriques à base d'oxydes métalliques
H01G 4/40 - Combinaisons structurales de condensateurs fixes avec d'autres éléments électriques non couverts par la présente sous-classe, la structure étant principalement constituée par un condensateur, p.ex. combinaisons RC
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/66 - Types de dispositifs semi-conducteurs
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.
A display panel for displaying an image is provided with a plurality of pixels arranged in a matrix. Each pixel includes one or more units each including a purality of subunits. Each subunit includes a transistor in which an oxide semiconductor layer which is provided so as to overlap a gate electrode with a gate insulating layer interposed therebetween, a pixel electrode which drives liquid crystal connected to a source or a drain of the transistor, a counter electrode which is provided so as to face the pixel electrode, and a liquid crystal layer provided between the pixel electrode and the counter electrode. In the display panel, a transistor whose off current is lower than 10zA/μm at room termperature per micrometer of the channel width and off current of the transistor at 85° C. can be lower than 100zA/μm per micrometer in the channel width.
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p.ex. par des couches d'alignement
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A novel mixed material with improved resistance is provided. The mixed material includes a first heteroaromatic compound and a second heteroaromatic compound, and the first heteroaromatic compound is represented by any one of General Formulae (G1) to (G6). The second heteroaromatic compound is not represented by the same general formula as that of the first heteroaromatic compound.
H10K 85/60 - Composés organiques à faible poids moléculaire
C07D 403/10 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne carbonée contenant des cycles aromatiques
The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.
G02F 1/1333 - Dispositions relatives à la structure
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G06F 3/044 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens capacitifs
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/82 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
H10K 59/60 - OLED intégrées avec des éléments inorganiques sensibles à la lumière, p. ex. avec des cellules solaires inorganiques ou des photodiodes inorganiques
A display device capable of displaying high-quality images can be provided. A display device includes a first light-emitting element, a second light-emitting element, a first protective layer, a second protective layer, and a gap. The first light-emitting element includes a first lower electrode, a first EL layer over the first lower electrode, a first upper electrode over the first EL layer, and the second light-emitting element includes a second lower electrode, a second EL layer over the second lower electrode, and a second upper electrode over the second EL layer. The first light-emitting element and the second light-emitting element are adjacent to each other. The first protective layer is provided over the first light-emitting element and the second light-emitting element and includes a region in contact with the side surface of the first EL layer and the side surface of the second EL layer. The second protective layer is provided over the first protective layer. The gap is provided between the first EL layer and the second EL layer and is provided between the first protective layer and the second protective layer.
H10K 59/80 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe - Détails de structure
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
53.
DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE
A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
A low-resolution image is displayed at higher resolution and afterimages are reduced. Resolution is made higher by super-resolution processing. In this case, the super-resolution processing is performed after frame interpolation processing is performed. Further, in that case, the super-resolution processing is performed using a plurality of processing systems. Therefore, even when frame frequency is made higher, the super-resolution processing can be performed at high speed. Further, since frame rate doubling is performed by the frame interpolation processing, afterimages can be reduced.
G09G 3/34 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante
G06T 1/00 - Traitement de données d'image, d'application générale
G06T 3/40 - Changement d'échelle d'une image entière ou d'une partie d'image
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
G09G 5/00 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation
A display apparatus with low-power consumption is provided. The display apparatus includes an inverter circuit and a pixel having a function of adding data, and the inverter circuit has a function of inverting data supplied from a source driver. The inverter circuit has a function of inverting data supplied from a source driver. The pixel has a function of adding data supplied from the source driver and the inverter circuit. Accordingly, the pixel can generate a voltage several times higher than the output voltage of the source driver and can supply the voltage to a display device. With such a structure, the output voltage of the source driver can be lowered, so that a display apparatus with low power consumption can be achieved.
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
A display apparatus capable of image capturing with high sensitivity is provided. The display apparatus is configured to include first to third switches, a first transistor, a second transistor, and a light-emitting/receiving element. The first switch is electrically connected to a gate of the first transistor. The second switch is positioned between one of a source and a drain of the first transistor and one electrode of the light-emitting/receiving element. The third switch is positioned between the one electrode of the light-emitting/receiving element and a gate of the second transistor. The other of the source and the drain of the first transistor is supplied with a first potential. The other electrode of the light-emitting/receiving element is supplied with a second potential. The light-emitting/receiving element has a function of emitting light of a first color and a function of receiving light of a second color.
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
H10K 65/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière et au moins un composant organique sensible aux rayonnements, p. ex. des optocoupleurs organiques
A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.
H01L 27/10 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive
H10B 12/00 - Mémoires dynamiques à accès aléatoire [DRAM]
H10B 41/27 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. des canaux en forme de U
H10B 43/30 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par la région noyau de mémoire
58.
FUNCTIONAL PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE
A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side. The second microlens includes a third surface and a fourth surface; the third surface is closer to the photoelectric conversion device than the fourth surface is; and the fourth surface has a smaller radius of curvature than the third surface.
G02B 27/09 - Mise en forme du faisceau, p.ex. changement de la section transversale, non prévue ailleurs
G06F 3/0354 - Dispositifs de pointage déplacés ou positionnés par l'utilisateur; Leurs accessoires avec détection des mouvements relatifs en deux dimensions [2D] entre le dispositif de pointage ou une partie agissante dudit dispositif, et un plan ou une surface, p.ex. souris 2D, boules traçantes, crayons ou palets
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G06F 3/042 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens opto-électroniques
G06F 3/147 - Sortie numérique vers un dispositif de visualisation utilisant des panneaux de visualisation
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09G 3/30 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
H10K 50/00 - Dispositifs organiques émetteurs de lumière
H10K 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/60 - OLED intégrées avec des éléments inorganiques sensibles à la lumière, p. ex. avec des cellules solaires inorganiques ou des photodiodes inorganiques
59.
SEPARATOR, SECONDARY BATTERY, AND A METHOD FOR MANUFACTURING SEPARATOR
A secondary battery with little deterioration is provided. A secondary battery with high safety is provided. A separator having excellent characteristics is provided. A separator achieving the secondary battery with high safety is provided. A novel separator is provided. In the separator, a polymer porous film and a layer including a ceramic-based material containing a metal oxide microparticle are stacked, the thickness of the layer including a ceramic-based material is greater than or equal to 1 μm and less than or equal to 100 μm, and the film thickness of the polymer porous film is greater than or equal to 4 μm and less than or equal to 50 μm.
H01M 50/451 - Séparateurs, membranes ou diaphragmes caractérisés par le matériau ayant une structure en couches comprenant des couches de matériau organique uniquement et des couches comprenant un matériau inorganique
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 50/403 - Procédés de fabrication des séparateurs, des membranes ou des diaphragmes
One embodiment of the present invention provides a display device from which a driver or a fellow passenger in a mobile body such as a vehicle can easily obtain desired information. One embodiment of the present invention is a display device including a display panel. The display panel is placed inside a mobile body including window glass. A film including a light-blocking layer is provided between the window glass and the display panel of the mobile body. By providing a driving unit controlling the display panel, the positional relationship between the window glass and the display panel is changed. Alternatively, by providing a driving unit controlling the film including the light-blocking layer, the positional relationship between the window glass and the film including the light-blocking layer is changed.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes an anode over a cathode with an EL layer sandwiched therebetween. The EL layer includes at least a light-emitting layer and an oxidation-resistant layer over the light-emitting layer. The EL layer has a side surface. The light-emitting device includes a block layer in contact with a top surface and the side surface of the EL layer. The cathode is in contact with the side surface of the EL layer with the block layer therebetween. The block layer includes a heterocyclic compound. In the light-emitting device with the above structure, the oxidation-resistant layer may include any one or a plurality of oxides of metals belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.
An object of one embodiment of the present invention is to achieve a manufacturing method which can increase capacity density of a secondary battery. Another object is to provide a manufacturing method of a highly safe or reliable secondary battery. The manufacturing method of electrodes (a positive electrode and a negative electrode) of a secondary battery includes a vibration treatment step for supplying vibration to the electrode and a press step for applying pressure to the electrode to compress an active material layer in the electrode. The vibration treatment step is performed before the press step.
A positive electrode active material with high charge and discharge capacity is provided. A novel positive electrode active material is provided. The positive electrode active material is manufactured in such a manner that after a cobalt compound (also referred to as a precursor) containing nickel, cobalt, and manganese is obtained by a coprecipitation method, a mixture obtained by mixing a lithium compound and the cobalt compound is heated at a first temperature; after the mixture is ground or crushed, heating at a second temperature that is a temperature higher than the first temperature is further performed; and after an additive is mixed, third heat treatment is performed. The first temperature is higher than or equal to 400° C. and lower than or equal to 700° C. The second temperature is higher than 700° C. and lower than or equal to 1050° C.
A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.
A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first light-emitting device, and a second light-emitting device. The top surfaces of the first insulating layer, the first conductive layer, and the second conductive layer are level or substantially level with one another. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode over the first conductive layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer, and the common electrode over the second conductive layer. The second insulating layer covers a side surface of each of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer.
An arithmetic device and an electronic device having small power consumption is provided. An arithmetic device and an electronic device capable of high-speed operation is provided. An arithmetic device and an electronic device capable of suppressing heat generation is provided. The arithmetic device includes a first arithmetic portion and a second arithmetic portion. The first arithmetic portion includes a first CPU core and a second CPU core. The second arithmetic portion includes a first GPU core and a second GPU core. The CPU cores each have a power gating function and each include a first data retention circuit electrically connected to a flip-flop. The first GPU core includes a second data retention circuit capable of retaining an analog value and reading out the analog value as digital data of two or more bits. The second GPU core includes a third data retention circuit capable of retaining a digital value and reading out the digital value as digital data of one bit. The first to third data retention circuits each include a transistor including an oxide semiconductor and a capacitor.
G06F 1/3234 - Gestion de l’alimentation, c. à d. passage en mode d’économie d’énergie amorcé par événements Économie d’énergie caractérisée par l'action entreprise
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p.ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
G06T 1/20 - Architectures de processeurs; Configuration de processeurs p.ex. configuration en pipeline
A touch panel which is thin, has a simple structure, or is easily incorporated into an electronic device is provided. The touch panel includes a first substrate, a second substrate, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, liquid crystal, and an FPC. The first conductive layer has a function of a pixel electrode. The second conductive layer has a function of a common electrode. The third and fourth conductive layers each have a function of an electrode of a touch sensor. The FPC is electrically connected to the fourth conductive layer. The first, second, third, and fourth conductive layers and the liquid crystal are provided between the first and second substrates. The first, second, and third conductive layers are provided over the first substrate. The FPC is provided over the first substrate.
To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.
H04N 23/53 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande - Détails de structure de viseurs électroniques, p. ex. rotatifs ou détachables
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande munis de moyens d'éclairage
H04N 23/63 - Commande des caméras ou des modules de caméras en utilisant des viseurs électroniques
A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.
A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 59/124 - Couches isolantes formées entre les éléments TFT et les éléments OLED
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
71.
Display Apparatus, Display Module, and Electronic Device
A display apparatus having a photoelectric conversion function with high sensitivity is provided. The light extraction efficiency of the display apparatus is increased. The display apparatus includes a light-emitting device, a light-emitting and light-receiving device, a first lens, and a second lens. The light-emitting device has a function of emitting light of a first color. The light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color and converting it into an electric signal. The light emitted by the light-emitting device is emitted to the outside of the display apparatus through the first lens. Light enters the light-emitting and light-receiving device from the outside of the display apparatus through the second lens.
A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
73.
METHOD FOR FORMING POSITIVE ELECTRODE ACTIVE MATERIAL AND SECONDARY BATTERY AND VEHICLE
A novel method for forming a positive electrode active material is provided. In the method for forming a positive electrode active material, a cobalt source and an additive element source are mixed to form an acidic solution; the acidic solution and an alkaline solution are made to react to form a cobalt compound; the cobalt compound and a lithium source are mixed to form a mixture; and the mixture is heated. The additive element source is a compound containing one or more selected from gallium, aluminum, boron, nickel, and indium.
A high-resolution display device is provided. The display device includes first and second light-emitting devices, first and second coloring layers, and first, second, and third insulators; the first coloring layer is positioned to overlap with the first light-emitting device; the second coloring layer is positioned to overlap with the second light-emitting device; the first light-emitting device and the second light-emitting device have a function of emitting white light; the first coloring layer and the second coloring layer have a function of transmitting visible light of different colors; the first light-emitting device includes a first conductive layer and a first light-emitting layer over the first conductive layer; the second light-emitting device includes a second conductive layer and a second light-emitting layer over the second conductive layer; the first insulator is in contact with at least part of a side surface of the first light-emitting device; the second insulator is in contact with at least part of a side surface of the second light-emitting device; the first insulator and the second insulator are positioned over the third insulator; and the third insulator is positioned to cover an end portion of the first conductive layer and an end portion of the second conductive layer.
A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G06F 1/16 - TRAITEMENT ÉLECTRIQUE DE DONNÉES NUMÉRIQUES - Détails non couverts par les groupes et - Détails ou dispositions de structure
H05K 5/00 - Enveloppes, coffrets ou tiroirs pour appareils électriques
H05K 5/02 - Enveloppes, coffrets ou tiroirs pour appareils électriques - Détails
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 77/10 - Substrats, p. ex. substrats flexibles
To provide a thin touch panel, a touch panel having a simple structure, a touch panel which can be easily incorporated into an electronic device, or a touch panel with a small number of components. The touch panel includes pixel electrodes arranged in a matrix, a plurality of signal lines, a plurality of scan lines, a plurality of first wirings extending in a direction parallel to the signal lines, and a plurality of second wirings extending in a direction parallel to the scan line. Part of the first wiring and part of the second wiring function as a pair of electrodes included in a touch sensor. The first wiring and the second wiring each have a stripe shape or form a mesh shape and are each provided between two adjacent pixel electrodes in a plan view.
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
78.
POWER STORAGE DEVICE, BATTERY MANAGEMENT UNIT, AND ELECTRONIC DEVICE
A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.
H01G 11/82 - Fixation ou assemblage d’un élément capacitif dans un boîtier, p.ex. montage d’électrodes, de collecteurs de courant ou de bornes dans des récipients ou capsulations
H01M 50/133 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie caractérisés par les propriétés physiques, p.ex. perméabilité au gaz ou dimensions Épaisseur
A display apparatus having both a personal authentication function and a high resolution is provided. The display apparatus includes a display portion and a sensor portion. The display portion includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first EL layer. The second light-emitting element includes a second EL layer. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light. The light-receiving element has a function of detecting infrared light. A distance between the first EL layer and the second EL layer is less than or equal to 6 μm.
A high-resolution display apparatus having a function of sensing light is provided. A high-definition display apparatus having a function of sensing light is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a third light-emitting device, a first light-receiving device, and a second light-receiving device in a first pixel. The first light-emitting device has a function of emitting red light. The second light-emitting device has a function of emitting green light. The third light-emitting device has a function of emitting blue light. The first light-receiving device has a function of sensing light emitted from at least one of the three light-emitting devices. The second light-receiving device has a function of sensing infrared light.
A display device having a function of detecting an object that is in contact with or approaches a display portion is provided. The display device includes a light-emitting element and a light-receiving element. The light-emitting element includes a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode. The light-receiving element includes a second pixel electrode, a second functional layer, a light-receiving layer, the common layer, and the common electrode. The first functional layer includes one of a hole-injection layer and an electron-injection layer. The second functional layer includes one of a hole-transport layer and an electron-transport layer. The common layer has a function of the other of the hole-injection layer and the electron-injection layer in the light-emitting element and has a function of the other of the hole-transport layer and the electron-transport layer in the light-receiving element.
H10K 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe
H10K 39/34 - Capteurs d'images organiques intégrés avec des diodes électroluminescentes organiques [OLED]
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer containing an inorganic insulating material is provided between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer to face each other. The common electrode is provided along the side surface of the first EL layer, the side surface of the second EL layer, and a top surface of the insulating layer. A width of the insulating layer is larger than or equal to 2 times and smaller than or equal to 4 times a distance between the first pixel electrode and the second pixel electrode.
H10K 50/13 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] spécialement adaptées à l'émission de lumière multicolore, p. ex. à l'émission de lumière blanche comprenant des couches EL empilées dans une unité EL
A display device includes a display panel mounted on a curved surface, and driver circuits including circuit elements which are mounted on a plurality of plane surfaces provided on the back of the curved surface in a stepwise shape along the curved surface.
A display device having a biometric authentication function is provided. A highly convenient display device is provided. The display device includes a first substrate, a light guide plate, a plurality of first light-emitting elements, a second light-emitting element, and a plurality of light-receiving elements. The light guide plate includes a first portion having a first surface and a second portion having a second surface that connects with the first surface and has a different normal direction from the first surface. The first light-emitting elements and the light-receiving elements are provided between the first substrate and the light guide plate. The first light-emitting elements have a function of emitting first light through the light guide plate, and the second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving elements have a function of receiving the second light and converting the second light to an electric signal. The first light includes visible light, and the second light includes infrared light.
H10K 65/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière et au moins un composant organique sensible aux rayonnements, p. ex. des optocoupleurs organiques
F21V 8/00 - Utilisation de guides de lumière, p.ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p.ex. des polariseurs ou des réflecteurs
G02F 1/1339 - Dispositions relatives à la structure Éléments d'espacement; Scellement des cellules
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
A novel semiconductor device formed with single-polarity circuits using OS transistors is provided. Thus, connection between different layers in a memory circuit is unnecessary. This can reduce the number of connection portions and improve the flexibility of circuit layout and the reliability of the OS transistors. In particular, many memory cells are provided; thus, the memory cells are formed with single-polarity circuits, whereby the number of connection portions can be significantly reduced. Further, by providing a driver circuit in the same layer as the cell array, many wirings for connecting the driver circuit and the cell array can be prevented from being provided between layers, and the number of connection portions can be further reduced. An interposer provided with a plurality of integrated circuits can function as one electronic component.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H10B 12/00 - Mémoires dynamiques à accès aléatoire [DRAM]
A semiconductor device having favorable display quality is provided. The semiconductor device is provided with a display portion, a line-of-sight sensor portion, a control portion, and an arithmetic portion. The line-of-sight sensor portion has a function of obtaining first information showing a direction of a user's line of sight. The arithmetic portion has a function of determining a first region including a gaze point of the user on the display portion with use of the first information and a function of increasing a definition of an image displayed on the first region. Light emitted from the display portion may be used to obtain the first information showing the direction of the line of sight.
G09G 3/00 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques
G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
89.
DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE
A multifunctional display apparatus with high resolution is provided. The display apparatus includes a first pixel; the first pixel includes a first light-emitting device, a second light-emitting device, and a first light-receiving device; the first light-emitting device includes a first light-emitting layer; the second light-emitting device includes a second light-emitting layer; the second light-emitting device has a function of emitting white light; the first light-emitting device has a function of emitting visible light of a color different from that of the second light-emitting device; the first light-receiving device has a function of sensing light emitted from the first light-emitting device; a side surface of the first light-emitting layer faces a side surface of the second light-emitting layer; and the distance between the side surface of the first light-emitting layer and the side surface of the second light-emitting layer is less than or equal to 8 μm.
A high-resolution display device in which delay of input signals to pixels is reduced is provided. In the display device, a first layer, a second layer, and a third layer are formed in this order from the bottom. The first layer includes a driver circuit and a plurality of first wirings, the second layer includes a plurality of first contact portions, and the third layer includes a pixel array and a plurality of second wirings. The pixel array includes a plurality of pixel circuits. The plurality of second wirings are parallel to each other and extended in the column direction of the pixel array, and the plurality of pixel circuits are electrically connected to the plurality of second wirings. The driver circuit includes a plurality of output terminals positioned along a first direction. The plurality of first wirings are extended perpendicular to the first direction, and the plurality of output terminals are electrically connected to the plurality of first wirings. The plurality of first wirings are electrically connected to the plurality of second wirings through the plurality of first contact portions.
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
G09G 3/3258 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander la tension aux bornes de l'élément électroluminescent
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H10B 12/00 - Mémoires dynamiques à accès aléatoire [DRAM]
92.
Functional Panel, Display Device, Input/Output Device, and Data Processing Device
A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first element and a second element. The first element includes a first electrode, a second electrode, and a first optical functional layer. The first optical functional layer includes a region interposed between the first electrode and the second electrode. The first optical functional layer includes a first layer and a layer containing a first light-emitting material. The second element includes a third electrode, the second electrode, and a second optical functional layer. The second optical functional layer includes a region interposed between the third electrode and the second electrode. The second optical functional layer includes the first layer and a layer containing a photoelectric conversion material. The first layer includes a region interposed between the layer containing the first light-emitting material and the second electrode and a region interposed between the layer containing the photoelectric conversion material and the second electrode. The layer containing the photoelectric conversion material contains an organic high molecular material.
G06F 3/042 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens opto-électroniques
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
H10K 59/123 - Connexion des électrodes de pixel aux transistors à couches minces [TFT]
The reliability of a light-emitting device is improved. Provided is a light-emitting device including a light-emitting layer between a first electrode and a second electrode. The light-emitting layer contains a light-emitting substance and a first organic compound. A difference between a sum of energy of the first organic compound in a ground state and energy of an oxygen molecule in a ground state and energy of a transition state formed by the first organic compound and the oxygen molecule is greater than or equal to 1.84 eV. A difference between the energy of the transition state formed by the first organic compound and the oxygen molecule and energy of an oxygen adduct of the first organic compound in a ground state is less than or equal to 0.87 eV.
To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0
G02F 1/1362 - Cellules à adressage par une matrice active
G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/66 - Types de dispositifs semi-conducteurs
96.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/51 - Matériaux isolants associés à ces électrodes
A novel method for forming a positive electrode active material is provided. The method for forming a positive electrode active material includes causing a reaction between a cobalt aqueous solution and an alkaline aqueous solution to form a cobalt compound; mixing the cobalt compound and a lithium compound and performing a first heat treatment to form a first composite oxide; mixing the first composite oxide and a compound containing a first additive element and performing a second heat treatment to form a second composite oxide; and mixing the second composite oxide and a compound containing a second additive element and performing a third heat treatment. The first heat treatment is performed at a temperature higher than or equal to 700° C. and lower than or equal to 1100° C. The second heat treatment is performed at a temperature higher than or equal to 700° C. and lower than or equal to 1000° C. The third heat treatment is performed at a temperature equal to the temperature of the second heat treatment or at a temperature lower than the temperature of the second heat treatment.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
A display device with high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided. A display device that can easily achieve higher resolution is provided. A display device with both high display quality and high resolution is provided. A display device with high contrast is provided. The display device includes a first conductive layer, a first insulating layer over the first conductive layer, a second conductive layer including a first region over the first insulating layer and a second region in an opening provided in the first insulating layer, a second insulating layer over the first insulating layer, a third insulating layer over the second region, an EL layer including a third region over the first region, a fourth region over the second insulating layer, and a fifth region over the third insulating layer, and a third conductive layer over the EL layer. The opening is provided in the first insulating layer so as to reach a top surface of the first conductive layer. A top surface of the first region, a top surface of the second insulating layer, and a top surface of the third insulating layer are substantially level with each other.
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
H10K 50/13 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] spécialement adaptées à l'émission de lumière multicolore, p. ex. à l'émission de lumière blanche comprenant des couches EL empilées dans une unité EL
H10K 59/124 - Couches isolantes formées entre les éléments TFT et les éléments OLED
99.
ELECTRONIC DEVICE, STORAGE MEDIUM, PROGRAM, AND DISPLAYING METHOD
An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.
G06F 1/16 - TRAITEMENT ÉLECTRIQUE DE DONNÉES NUMÉRIQUES - Détails non couverts par les groupes et - Détails ou dispositions de structure
G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
G06F 3/0484 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] pour la commande de fonctions ou d’opérations spécifiques, p.ex. sélection ou transformation d’un objet, d’une image ou d’un élément de texte affiché, détermination d’une valeur de paramètre ou sélection d’une plage de valeurs
A highly sensitive imaging device that can perform imaging even under a low illuminance condition is provided. One electrode of a photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of a first transistor and one of a source electrode and a drain electrode of a third transistor. The other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor. The other electrode of the photoelectric conversion element is electrically connected to a first wiring. A gate electrode of the first transistor is electrically connected to a second wiring. When a potential supplied to the first wiring is HVDD, the highest value of a potential supplied to the second wiring is lower than HVDD.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
brevets
