A novel functional panel that is highly convenient or highly reliable is provided. The functional panel includes a first pixel. The first pixel includes a first element, a color conversion layer, and a first functional layer. The first functional layer is positioned between the first element and the color conversion layer. The first element has a function of emitting light and contains gallium nitride. The color conversion layer has a function of converting the color of light emitted from the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region positioned between the pixel circuit and the first element, and has an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film and is electrically connected to the first element through the opening.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a first electrode, a second electrode, and a first layer. The first layer is positioned between the first electrode and the second electrode. The first layer includes a light-emitting material, a first organic compound, and a first material. The light-emitting material has a function of emitting fluorescent light. The absorption spectrum of the light-emitting material has the longest-wavelength edge at a first wavelength. The first organic compound has a function of converting triplet excitation energy into light emission. The spectrum of the emitted light has the shortest-wavelength edge at a second wavelength. The second wavelength is positioned at a wavelength shorter than the first wavelength. The first organic compound includes a first substituent R1. The first substituent R1 is any of an alkyl group, a substituted or unsubstituted cycloalkyl group, and a trialkylsilyl group. The first material has a function of emitting delayed fluorescent light at room temperature. The difference between the HOMO level and the LUMO level of the first material is smaller than the difference between the HOMO level and the LUMO level of the first organic compound.
A display device with both high display quality and high resolution is provided. The display device includes a light-emitting element and a connection portion. The connection portion is provided along an outer periphery of a display region where the light-emitting element is provided. The light-emitting element includes a pixel electrode, a first EL layer over the pixel electrode, a second EL layer over the first EL layer, and a common electrode over the second EL layer. The connection portion includes a connection electrode, a second EL layer over the connection electrode, and the common electrode over the second EL layer. The second EL layer includes a first region in contact with the connection electrode and a second region in contact with the common electrode. The area of a region where the first region and the second region overlap with each other in a top view is greater than or equal to 40000 square micrometers. The second EL layer includes a region where the film thickness is greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second EL layer contains a substance with a high electron-injection property.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
A highly reliable display device with high display quality is provided. The display device includes a first light-emitting element, a second light-emitting element provided to be adjacent to the first light-emitting element, a first protective layer, a second protective layer, and an insulating layer. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer is provided over the first pixel electrode, and the second EL layer is provided over the second pixel electrode. The first protective layer includes a region in contact with the side surface of the first EL layer, and the second protective layer includes a region in contact with the side surface of the second EL layer. The insulating layer is provided between the first protective layer and the second protective layer. The common electrode is provided over the first EL layer, over the second EL layer, over the first protective layer, over the second protective layer, and over the insulating layer.
A high-resolution or high-definition display apparatus is provided. The display apparatus includes a plurality of light-emitting elements, a light-receiving element, a coloring layer, and a first sidewall. The light-emitting elements include a first pixel electrode, a first light-emitting layer over the first pixel electrode, an intermediate layer over the first light-emitting layer, and a common electrode over a second light-emitting layer over a first intermediate layer. The first pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are divided for each light-emitting element. The coloring layer is provided to include a region overlapping with the light-emitting element. The light-receiving element includes a second pixel electrode, a light-receiving layer over the second pixel electrode, and a common electrode over the light-receiving layer. The first sidewall is provided to cover at least part of a side surface of the first pixel electrode, a side surface of the first light-emitting layer, a side surface of the first intermediate layer, and a side surface of the second light-emitting layer. A second sidewall is provided to cover at least part of a side surface of the second pixel electrode and a side surface of the light-receiving layer.
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor, a capacitor, and a first insulating layer. The first insulating layer is provided over a first conductive layer and a second conductive layer and includes a first opening reaching the first conductive layer and a second opening reaching the second conductive layer. The transistor is a vertical transistor in which a channel formation region is provided along the side wall of the first opening. The capacitor is a vertical capacitor in which a pair of electrodes and a dielectric are provided along the side surface of the second opening.
Provided is a storage device which allows for miniaturization and high integration. This transistor comprises: a first electric conductor having a columnar region; a first insulator having a cylindrical first region; a second electric conductor having an opening through which the first electric conductor passes; a first semiconductor which is located on the second electric conductor and which has a cylindrical second region; and a third electric conductor on the first semiconductor. The first region of the first insulator surrounds the columnar region of the first electric conductor, the first electric conductor has a third region positioned above the opening of the second electric conductor, and the first electric conductor is surrounded, in the third region, by the second region of the first semiconductor with the first region of the first insulator therebetween.
The present invention provides a semiconductor device which achieves miniaturization or high integration. This semiconductor device comprises a first insulator on a substrate, an oxide semiconductor that covers the first insulator, a first conductor and a second conductor on the oxide semiconductor, a second insulator disposed on the first conductor and the second conductor and having an opening overlapping a region between the first conductor and the second conductor, a third insulator disposed inside the opening and disposed on the oxide semiconductor, and a third conductor disposed inside the opening and disposed on the third insulator. The height of the first insulator is longer than the width of the first insulator.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Provided is a semiconductor device having a novel configuration. This semiconductor device has: a first element layer having a bit line drive circuit; a second element layer having a first switch circuit, a first memory cell, and first wiring provided between the first switch circuit and the first memory cell; and a third element layer having a second switch circuit, a second memory cell, and second wiring provided between the second switch circuit and the second memory cell. The first switch circuit has a function for bringing the first wiring and third wiring into a non-conducting state during a data write operation or read operation of the second memory cell. The second switch circuit has a function for bringing the second wiring and the third wiring into a non-conducting state in a data write operation state or a data read operation state of the first memory cell.
G11C 7/12 - Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
G11C 5/02 - Disposition of storage elements, e.g. in the form of a matrix array
G11C 5/04 - Supports for storage elements; Mounting or fixing of storage elements on such supports
G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
H10B 12/00 - Dynamic random access memory [DRAM] devices
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
H10B 99/00 - Subject matter not provided for in other groups of this subclass
10.
Light-Emitting Device, Light-Emitting Apparatus, Electronic Appliance, and Lighting Device
A light-emitting device with high heat resistance in a manufacturing process is to be provided. The light-emitting device includes a second electrode over a first electrode with an EL layer sandwiched therebetween; the EL layer includes at least a light-emitting layer, a first electron-transport layer, and a second electron-transport layer; the first electron-transport layer is over the light-emitting layer; the light-emitting device includes an insulating layer in contact with a side surface of the light-emitting layer and a side surface of the first electron-transport layer; the second electron-transport layer is over the first electron-transport layer; the insulating layer is positioned between the second electron-transport layer and the side surface of the light-emitting layer and the side surface of the first electron-transport layer; and the first electron-transport layer contains a heteroaromatic compound including at least one heteroaromatic ring and an organic compound different from the heteroaromatic compound.
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A novel high molecular compound is provided. The high molecular compound includes a repeating unit. The repeating unit has a fluorenediyl group, a hole-transport skeleton, and an electron-transport skeleton. The hole-transport skeleton is bonded to the fluorenediyl group through a substituted or unsubstituted first arylene group. The electron-transport skeleton is bonded to the fluorenediyl group through a substituted or unsubstituted second arylene group. In an excited state, intramolecular charge transfer occurs between the hole-transport skeleton and the electron-transport skeleton.
H10K 85/60 - Organic compounds having low molecular weight
C07D 491/048 - Ortho-condensed systems with only one oxygen atom as ring hetero atom in the oxygen-containing ring the oxygen-containing ring being five-membered
13.
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H10K 59/131 - Interconnections, e.g. wiring lines or terminals
H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
H10K 71/50 - Forming devices by joining two substrates together, e.g. lamination techniques
H10K 71/80 - Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
A novel electronic device is provided. An electronic device capable of executing various types of processing by simple operation is provided. An electronic device with a high security level is provided. The electronic device includes a control portion, a detection portion, and a memory portion. The detection portion has a function of detecting touch operation and a function of obtaining fingerprint data on a touching finger. The memory portion has a function of retaining fingerprint data on a plurality of finger registered in advance. The control portion has functions of comparing the fingerprint data on the touching finger obtained by the detection portion with the fingerprint data on the plurality of fingers when the detection portion detects touch operation, and executing processing corresponding to the fingerprint data on the touching finger or a combination of the touch operation and the fingerprint data on the touching finger when the fingerprint data on the touching finger matches any one piece of the fingerprint data on the plurality of fingers.
An electronic device capable of detecting a difference in the way of touch is provided. An electronic device capable of detecting a difference in the way of touch with a small number of components is provided. An electronic device capable of executing various types of processes with simple operation is provided. The electronic device includes a control portion and a display portion. The display portion has a function of displaying an image on a screen and includes a detection portion. The detection portion has a function of detecting a touch operation and a function of imaging, at least twice, a detection object touching the screen. The control portion has a function of calculating a difference between the area of the detection object in first imaging and the area of the detection object in second imaging to execute a different process depending on whether the difference is larger or smaller than a reference.
G06V 40/50 - Maintenance of biometric data or enrolment thereof
H10K 65/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
A novel organic compound is provided. Alternatively, an organic compound that exhibits light emission with favorable chromaticity is provided. Alternatively, an organic compound that exhibits blue light emission with favorable chromaticity is provided. Alternatively, an organic compound with favorable emission efficiency is provided. Alternatively, an organic compound having a high carrier-transport property is provided. Alternatively, an organic compound with favorable reliability is provided. An organic compound including at least one amino group in which any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, and a substituted or unsubstituted carbazolyl group is boneded to any one of a substituted or unsubstituted naphthobisbenzofuran skeleton, a substituted or unsubstituted naphthobisbenzothiophene skeleton, and a substituted or unsubstituted naphthobenzofuranobenzothiophene skeleton is provided.
C07D 491/048 - Ortho-condensed systems with only one oxygen atom as ring hetero atom in the oxygen-containing ring the oxygen-containing ring being five-membered
C07D 495/00 - Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
H10K 85/60 - Organic compounds having low molecular weight
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a first light-emitting device, a second light-emitting device, a partition, a first protective layer, and a second protective layer. The first light-emitting device includes a first electrode, a second electrode, and a first layer, and the first layer is interposed between the electrodes. The first layer includes a first material having a hole-transport property and a first substance having an electron-accepting property, and the first protective layer is in contact with the second electrode. The second light-emitting device includes a third electrode, a fourth electrode, and a second layer, and the second layer is interposed between the electrodes. The second layer includes the first material having a hole-transport property and the first substance having an electron-accepting property, and the second layer includes a first gap between the second layer and the first layer. The second protective layer includes a second gap between the second protective layer and the first protective layer. The second gap overlaps with the first gap, and the second protective layer is in contact with the fourth electrode. The partition overlaps with the first gap and the second gap.
An optical device with favorable characteristics is provided. An optical device with low driving voltage is provided. An optical device with low power consumption is provided. The optical device includes a first electrode, a second electrode, an active layer, and a carrier-transport layer. The active layer is positioned between the first electrode and the second electrode. The active layer contains a first organic compound and a second organic compound, the first organic compound is represented by General Formula (G1), and the second organic compound is represented by General Formula (G2-1). The carrier-transport layer is positioned between the second electrode and the active layer and the thickness of the carrier-transport layer is greater than or equal to 10 nm and less than or equal to 300 nm.
Provided is a novel semiconductor device. This semiconductor device has a flip-flop group that includes n flip-flops, and a plurality of storage units. The flip-flop group has a function for saving n bits of data. One of the plurality of storage units has a function for saving the n bits of data. Another one of the plurality of storage units has a function for saving p bits of data. When the data saved in the flip-flop group is n bits long, the n bits of data saved in the flip-flop group are written to the one of the storage units in a first operation. When the data saved in the flip-flop group is p bits long, the p bits of data are written to the other one of the storage units in a second operation. n is any integer equal to or greater than 2, and p is any integer equal to or greater than 1 and less than n.
G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
G11C 5/02 - Disposition of storage elements, e.g. in the form of a matrix array
H10B 12/00 - Dynamic random access memory [DRAM] devices
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
H10B 53/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
H10B 99/00 - Subject matter not provided for in other groups of this subclass
G06F 9/48 - Program initiating; Program switching, e.g. by interrupt
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
Provided is a semiconductor device having a narrow occupation area. This semiconductor device comprises a first transistor, a second transistor, a first insulating layer, and a second insulating layer. The first transistor comprises a metal oxide layer and a first conductive layer. The first insulating layer is provided on the first conductive layer. The second insulating layer is provided on the first insulating layer. The first insulating layer and the second insulating layer have an opening that reaches the first conductive layer. The metal oxide layer is in contact with a top surface of the first conductive layer, a side surface of the first insulating layer, and a top surface and a side surface of the second insulating layer. The first insulating layer contains oxygen. The second insulating layer contains nitrogen. The metal oxide layer has a region that is in contact with the second insulating layer and any one of the gate, the source, and the drain of the second transistor.
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H10K 59/123 - Connection of the pixel electrodes to the thin film transistors [TFT]
H10K 59/124 - Insulating layers formed between TFT elements and OLED elements
Provided is a novel semiconductor device. The present invention comprises a flip-flop circuit and a memory circuit. The memory circuit comprises a first transistor, a second transistor, a first capacitance element, and a second capacitance element, and further comprises a substrate, a first insulator, and a second insulator. The first insulator is provided on the substrate, and the second insulator is provided on the first insulator. The first insulator comprises a first opening and a second opening, which are provided extending perpendicular to a surface of the substrate, and the second insulator comprises a third opening and a fourth opening, which are provided extending perpendicular to a surface of the substrate. The flip-flop circuit is provided on the substrate. At least a portion of the first capacitance element and the second capacitance element is respectively provided in the first opening and the second opening, and at least a portion of the first transistor and the second transistor is respectively provided in the third opening and the fourth opening.
H10B 12/00 - Dynamic random access memory [DRAM] devices
G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
One aspect of the present invention provides a secondary battery that can be used in a wide temperature range and that is not easily affected by ambient temperatures. Also provided is a highly safe secondary battery. In the present invention, a secondary battery is produced using three types or two types of conduction aids and without using an organic resin binder. Selected as a carbon material functioning as the conduction aid is graphene oxide, graphene oxide that has been subjected to a reduction treatment, or carbon nanotubes.
A light-emitting apparatus can be provided at low cost. The light-emitting apparatus includes a plurality of partitions formed over an insulating surface and extending in a first direction, a plurality of pixel electrodes each having an island shape formed over the insulating surface, an EL layer formed over the pixel electrodes, and a second electrode formed over the EL layer. The partition has an insulating property, the pixel electrodes that are aligned in the first direction are positioned column by column between adjacent partitions in the plurality of partitions, and the EL layer is in contact with the insulating surface between the pixel electrodes adjacent to each other in the first direction in the pixel electrodes aligned in the first direction.
An object of one embodiment of the present invention is to provide a novel display device or a display system. Another object of one embodiment of the present invention is to provide a display device or a display system which can be manufactured at low cost and can provide various functions to a user. A pixel includes light-emitting elements whose emission colors are different from each other, a light-emitting element IR, a light-receiving element PS, and an infrared light sensor IRS. An image of a fundus of an eye is captured using the light-emitting element emitting an infrared light as a light source, and imaging is performed by the light-receiving element IRS. A substrate of a display panel is manufactured using a single crystal Si substrate capable of microfabrication and higher integration.
H10K 59/65 - OLEDs integrated with inorganic image sensors
A61B 3/00 - Apparatus for testing the eyes; Instruments for examining the eyes
A61B 3/12 - Objective types, i.e. instruments for examining the eyes independent of the patients perceptions or reactions for looking at the eye fundus, e.g. ophthalmoscopes
A61B 3/14 - Arrangements specially adapted for eye photography
H10K 59/90 - Assemblies of multiple devices comprising at least one organic light-emitting element
H10K 59/95 - Assemblies of multiple devices comprising at least one organic light-emitting element comprising only organic light-emitting elements
26.
Light-Emitting Device, Light-Emitting Apparatus, Electronic Appliance, and Lighting Device
A light-emitting device with high heat resistance in a manufacturing process is to be provided. The light-emitting device includes a second electrode over a first electrode with an EL layer sandwiched therebetween; the EL layer includes at least a light-emitting layer, a first electron-transport layer, a second electron-transport layer, and an electron-injection layer; the first electron-transport layer is over the light-emitting layer; the second electron-transport layer is over the first electron-transport layer; the light-emitting device includes an insulating layer in contact with a side surface of the light-emitting layer, a side surface of the first electron-transport layer, and a side surface of the second electron-transport layer; the electron-injection layer is over the second electron-transport layer; the insulating layer is positioned between the electron-injection layer and the side surface of the light-emitting layer, the side surface of the first electron-transport layer, and the side surface of the second electron-transport layer; and the second electron-transport layer contains a heteroaromatic compound including at least one heteroaromatic ring and an organic compound different from the heteroaromatic compound.
A novel display device is provided. The display device includes a plurality of pixels each including a light-emitting device, a sensor device, a first circuit device, and a second circuit device. The light-emitting device and the sensor device are provided in a first layer. The first circuit device is provided in a second layer. The second circuit device is provided in a third layer. The light-emitting device includes a lower electrode, an upper electrode, and a light-emitting layer provided between the lower electrode and the upper electrode. The sensor device has a function of detecting light emitted from the light-emitting device. The first circuit device has a function of driving the light-emitting device or the sensor device. The second circuit device has a function of performing an arithmetic operation based on information output from the first circuit device. The first layer is provided over the second layer. The second layer is provided over the third layer.
A secondary battery control system that conducts abnormality detection while predicting other parameters (internal resistance, SOC, and the like) with high accuracy is provided. A difference between an observation value (voltage) at a certain point in time and a voltage that is estimated using a prior-state variable is sensed. A threshold voltage is set in advance, and from the voltage difference that is sensed, a sudden abnormality, specifically a micro-short circuit or the like is detected. Furthermore, it is preferable that detection be performed by using a neural network to learn data on voltage difference in a time series and determine abnormality or normality.
G01R 31/3842 - Arrangements for monitoring battery or accumulator variables, e.g. SoC combining voltage and current measurements
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
G01R 31/367 - Software therefor, e.g. for battery testing using modelling or look-up tables
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
A small light-emitting device is provided. A light-emitting device which is less likely to produce a shadow is provided. A structure including a switching circuit for supplying a pulsed constant current and a light-emitting panel supplied with the pulsed constant current has been conceived.
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
G11C 11/405 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/8258 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/20 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
G11C 11/405 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/8258 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/20 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
G11C 11/405 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/8258 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/20 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Provided is a secondary battery which increases conductivity of a positive electrode and achieves a high capacity. This secondary battery comprises a positive electrode having a positive-electrode active substance, a first conductive material, and a second conductive material having a shape different from that of the first conductive material. The positive-electrode active substance has lithium cobaltate containing magnesium in a surface layer portion thereof. The weight of the second conductive material is smaller than or equal to the weight of the first conductive material. The second conductive material forms an aggregate and has a portion that sticks to the positive-electrode active substance.
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
34.
SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND ELECTRONIC APPARATUS
Provided is a semiconductor device having a high storage density. This semiconductor device has a first layer and a second layer above the first layer. The first layer has first to fourth conductors, first to fifth insulators, and a first semiconductor, and the second layer has fifth to seventh conductors, sixth and seventh insulators, and a second semiconductor. The first insulator, the second conductor, the second insulator, and the third conductor are formed in said order on the first conductor and are each provided with a first opening of which the bottom surface is the first semiconductor. In addition, the first semiconductor, the fourth insulator, and the fourth conductor are formed in said order in the first opening. In addition, the third insulator is positioned on the side surfaces of the third conductor and on the upper surface of the second insulator. The fifth conductor is positioned on the upper surface of the fourth conductor and the upper surface of the fifth insulator. The sixth insulator and the sixth conductor are formed in said order on the fifth conductor and are each provided with a second opening of which the bottom surface is the fifth conductor. In addition, the second semiconductor, the seventh insulator, and the seventh conductor are formed in said order in the second opening.
H10B 12/00 - Dynamic random access memory [DRAM] devices
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Provided is a storage device which can be miniaturized and made highly integrated. This storage device has a configuration having a capacitive element formed directly below a vertical transistor, wherein one electrode of the capacitive element is shared with either a source electrode or a drain electrode of the vertical transistor. Therefore, it is possible to provide a storage device in which the overlapping area of the vertical transistor and the capacitive element is large, and which has a high degree of integration. In addition, since the area ratio of the capacitive element to the cell area can be increased, the capacitive element can be formed with a low profile, and a thin-type memory cell array can be formed.
A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode. The first layer and the second layer use a material having a first spin density and a material having a second spin density higher than the first spin density, respectively, each observed with an electron spin resonance (ESR) spectrometer when the material is in a film state.
A method of manufacturing a high-resolution display apparatus having a light sensing function is provided. The method for manufacturing a display apparatus includes: a first step of forming a first pixel electrode and a second pixel electrode; a second step of depositing a light-emitting and light-receiving film over the first pixel electrode and the second pixel electrode; a third step of depositing a first sacrificial film covering the light-emitting and light-receiving film; a fourth step of etching the first sacrificial film and the light-emitting and light-receiving film to form a light-emitting and light-receiving layer and a first sacrificial layer over the light-emitting and light-receiving layer and to expose the second pixel electrode; a fifth step of depositing an EL film over the first sacrificial layer and over the second pixel electrode; a sixth step of depositing a second sacrificial film covering the EL film; a seventh step of etching the second sacrificial film and the EL film to form an EL layer and a second sacrificial layer over the EL layer; an eighth step of removing the first sacrificial layer and the second sacrificial layer and exposing the light-emitting and light-receiving layer and the EL layer; and a ninth step of forming a common electrode covering the light-emitting and light-receiving layer and the EL layer.
To reduce power consumption of a display device with the use of a simple structure and a simple operation. The display device includes an input device. Input of an image signal to a driver circuit is controlled in accordance with an image operation signal output from the input device. Specifically, input of image signals at the time when the input device is not operated is less frequent than that at the time when the input device is operated. Accordingly, display degradation (deterioration of display quality) caused when the display device is used can be prevented and power consumed when the display device is not used can be reduced.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having both a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving element has a function of receiving the second light and converting the second light into an electric signal. The first light includes visible light, and the second light includes infrared light.
A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.
G06F 1/16 - Constructional details or arrangements
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 10/42 - Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
A novel material and a transistor using a novel material are provided. A composite oxide includes at least two regions, one of which includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu), and the other of which includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). The proportion of the element M1 to In, Zn, and the element M1 in the region including the element M1 is less than that of the element M2 to In, Zn, and the element M2 in the region including the element M2. In an analysis of the composite oxide by X-ray diffraction, the diffraction pattern result in the X-ray diffraction is asymmetric with the angle at which the peak intensity of X-ray diffraction is detected as the symmetry axis.
A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
This storage device has: a first insulator on a substrate; an oxide semiconductor which covers at least a portion of the first insulator; first and second conductors on the oxide semiconductor; a second insulator on the first conductor; a third insulator on the second conductor; a third conductor on the second insulator; a fourth conductor on the third insulator; a fourth insulator which is disposed on the third conductor and the fourth conductor and has a first opening overlapping gaps between the first conductor, the second insulator, and the third conductor, and the second conductor, the third insulator, and the fourth conductor; a fifth insulator disposed inside the first opening; a fifth conductor disposed on the fifth insulator; a sixth conductor which is disposed inside a second opening formed in the fourth insulator and is in contact with the upper surface of the third conductor; and a seventh conductor which is disposed inside a third opening formed in the fourth insulator, the third insulator, and the fourth conductor and is in contact with the upper surface of the second conductor, wherein the height of the first insulator is greater than the width thereof, and the upper surface of the first insulator is in contact with the fifth insulator.
H10B 12/00 - Dynamic random access memory [DRAM] devices
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
The present invention provides a semiconductor device which comprises a transistor of a very small size. This semiconductor device comprises first and second transistors; the first transistor comprises first to third conductive layers, a first semiconductor layer and a first insulating layer; the second conductive layer is arranged on the first conductive layer; the first semiconductor layer is in contact with the upper surface of the first conductive layer and the second conductive layer; the first insulating layer is in contact with the upper surface of the first semiconductor layer; the third conductive layer is arranged on the first semiconductor layer and the first insulating layer; the second transistor comprises fourth to sixth conductive layers, a second semiconductor layer and the first conductive layer; the fifth conductive layer is arranged on the fourth conductive layer; the second semiconductor layer is in contact with the upper surface of the fourth conductive layer and the fifth conductive layer; the first insulating layer is in contact with the upper surface of the second semiconductor layer; the sixth conductive layer is arranged on the second semiconductor layer and the first insulating layer; a second insulating layer is arranged between the first and second conductive layers and between the fourth and fifth conductive layers; and the thickness of the second insulating layer between the first and second conductive layers is different from the thickness of the second insulating layer between the fourth and fifth conductive layers.
H10B 12/00 - Dynamic random access memory [DRAM] devices
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
H10B 99/00 - Subject matter not provided for in other groups of this subclass
H10K 50/10 - OLEDs or polymer light-emitting diodes [PLED]
46.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
47.
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, a transistor, and a first insulating layer. The capacitor includes first and second conductive layers and a second insulating layer. The second insulating layer is in contact with a side surface of the first conductive layer, and the second conductive layer covers at least part of the side surface of the first conductive layer with the second insulating layer therebetween. The transistor includes third to fifth conductive layers, a semiconductor layer, and a third insulating layer. The third conductive layer is in contact with a top surface of the first conductive layer. The first insulating layer is provided over the third conductive layer, and the fourth conductive layer is provided over the first insulating layer. The first insulating layer and the fourth conductive layer include an opening portion reaching the third conductive layer. The semiconductor layer is in contact with the third and fourth conductive layers. The semiconductor layer includes a region positioned inside the opening portion. Over the semiconductor layer, the third insulating layer and the fifth conductive layer are provided in this order so as to each include a region positioned inside the opening portion.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.
A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, a first functional layer, and a second functional layer. The display region includes a pixel, and the pixel includes a display element and a pixel circuit. The first functional layer includes the pixel circuit, a scan line, and a first connection portion. The display element is electrically connected to the pixel circuit, and the pixel circuit is electrically connected to the scan line. The second functional layer includes a region overlapping with the first functional layer, the second functional layer includes a driver circuit and a wiring, and the driver circuit is provided so that the pixel circuit is positioned between the driver circuit and the display element. The wiring is electrically connected to the scan line at the first connection portion, and the wiring is electrically connected to the driver circuit.
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H10K 50/86 - Arrangements for improving contrast, e.g. preventing reflection of ambient light
H10K 59/131 - Interconnections, e.g. wiring lines or terminals
H10K 59/38 - Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
A sturdy electronic device is provided. A reliable electronic device is provided. A novel electronic device is provided. An electronic device includes a first board, a second board, a display portion having flexibility, and a power storage device having flexibility. The first board and the second board face each other. The display portion and the power storage device are provided between the first board and the second board. The display portion includes a first surface facing the power storage device. The first surface includes a first region not fixed to the power storage device. The first region overlaps with a display region of the display portion.
Provided is a high-resolution or high-definition display apparatus. The display apparatus includes a first light-emitting element, a second light-emitting element, and a sidewall. The first and second light-emitting elements each include a pixel electrode, a first light-emitting layer over the pixel electrode, an intermediate layer over the first light-emitting layer, a second light-emitting layer over the intermediate layer, and a common electrode over the second light-emitting layer. That is, the first and second light-emitting elements can have tandem structures. The pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are separately provided between the light-emitting elements. The first light-emitting element and the second light-emitting element are adjacent to each other, and the sidewall is provided between the first light-emitting element and the second light-emitting element. The sidewall is provided to cover at least part of a side surface of the pixel electrode.
To support preparation of a document with consistency. First document data and second document data are received, the first document data is divided into a plurality of first blocks, the second document data is divided into a plurality of second blocks, a plurality of first combinations each including corresponding first and second blocks are determined, and of the plurality of first combinations, one or more second combinations with a difference between the corresponding first and second blocks are shown, any one of the plurality of first blocks included in the second combinations is received as a first designated block, the second block corresponding to the first designated block is received as a second designated block, and of the first combinations, a third combination in which presence or absence of establishment of textual entailment between the first designated block and the first block is different from presence or absence of establishment of textual entailment between the second designated block and the second block is shown.
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01G 4/40 - Structural combinations of fixed capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.
A display panel for displaying an image is provided with a plurality of pixels arranged in a matrix. Each pixel includes one or more units each including a purality of subunits. Each subunit includes a transistor in which an oxide semiconductor layer which is provided so as to overlap a gate electrode with a gate insulating layer interposed therebetween, a pixel electrode which drives liquid crystal connected to a source or a drain of the transistor, a counter electrode which is provided so as to face the pixel electrode, and a liquid crystal layer provided between the pixel electrode and the counter electrode. In the display panel, a transistor whose off current is lower than 10zA/μm at room termperature per micrometer of the channel width and off current of the transistor at 85° C. can be lower than 100zA/μm per micrometer in the channel width.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A novel mixed material with improved resistance is provided. The mixed material includes a first heteroaromatic compound and a second heteroaromatic compound, and the first heteroaromatic compound is represented by any one of General Formulae (G1) to (G6). The second heteroaromatic compound is not represented by the same general formula as that of the first heteroaromatic compound.
H10K 85/60 - Organic compounds having low molecular weight
C07D 403/10 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a carbon chain containing aromatic rings
The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A display device capable of displaying high-quality images can be provided. A display device includes a first light-emitting element, a second light-emitting element, a first protective layer, a second protective layer, and a gap. The first light-emitting element includes a first lower electrode, a first EL layer over the first lower electrode, a first upper electrode over the first EL layer, and the second light-emitting element includes a second lower electrode, a second EL layer over the second lower electrode, and a second upper electrode over the second EL layer. The first light-emitting element and the second light-emitting element are adjacent to each other. The first protective layer is provided over the first light-emitting element and the second light-emitting element and includes a region in contact with the side surface of the first EL layer and the side surface of the second EL layer. The second protective layer is provided over the first protective layer. The gap is provided between the first EL layer and the second EL layer and is provided between the first protective layer and the second protective layer.
Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.
A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
A low-resolution image is displayed at higher resolution and afterimages are reduced. Resolution is made higher by super-resolution processing. In this case, the super-resolution processing is performed after frame interpolation processing is performed. Further, in that case, the super-resolution processing is performed using a plurality of processing systems. Therefore, even when frame frequency is made higher, the super-resolution processing can be performed at high speed. Further, since frame rate doubling is performed by the frame interpolation processing, afterimages can be reduced.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
G06T 3/40 - Scaling of a whole image or part thereof
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G09G 5/00 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
A display apparatus with low-power consumption is provided. The display apparatus includes an inverter circuit and a pixel having a function of adding data, and the inverter circuit has a function of inverting data supplied from a source driver. The inverter circuit has a function of inverting data supplied from a source driver. The pixel has a function of adding data supplied from the source driver and the inverter circuit. Accordingly, the pixel can generate a voltage several times higher than the output voltage of the source driver and can supply the voltage to a display device. With such a structure, the output voltage of the source driver can be lowered, so that a display apparatus with low power consumption can be achieved.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
A display apparatus capable of image capturing with high sensitivity is provided. The display apparatus is configured to include first to third switches, a first transistor, a second transistor, and a light-emitting/receiving element. The first switch is electrically connected to a gate of the first transistor. The second switch is positioned between one of a source and a drain of the first transistor and one electrode of the light-emitting/receiving element. The third switch is positioned between the one electrode of the light-emitting/receiving element and a gate of the second transistor. The other of the source and the drain of the first transistor is supplied with a first potential. The other electrode of the light-emitting/receiving element is supplied with a second potential. The light-emitting/receiving element has a function of emitting light of a first color and a function of receiving light of a second color.
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
H10K 65/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.
H01L 27/10 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
H10B 12/00 - Dynamic random access memory [DRAM] devices
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/30 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
70.
FUNCTIONAL PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE
A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side. The second microlens includes a third surface and a fourth surface; the third surface is closer to the photoelectric conversion device than the fourth surface is; and the fourth surface has a smaller radius of curvature than the third surface.
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
G06F 3/0354 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
G06F 3/147 - Digital output to display device using display panels
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Solar batteries; batteries; storage batteries; lithium ion
secondary batteries; telecommunication machines and
apparatus; electronic communication apparatus and parts
thereof; electronic control apparatus and parts thereof;
semiconductor elements; electronic circuits; liquid crystal
displays; liquid crystal display panels; displays using
organic electroluminescence (EL) elements; memory chips;
memory modules; semiconductor memories; flash memory cards;
semiconductor integrated circuits including CPUs;
semiconductor chips for image processing; programmable
semiconductor chips; semiconductor elements for image
sensors; digital cameras and accessories or parts thereof;
digital video cameras and accessories thereof; CMOS cameras;
CCD cameras; touch panels; measuring machines, apparatus and
accessories or parts thereof; photographic machines,
apparatus and accessories thereof; cinematographic machines
and apparatus; electrodes for electronic components or
semiconductor elements; electrodes for lithium ion secondary
batteries; electrodes and parts thereof; on-board liquid
crystal display devices; on-board visual display units;
on-board organic electroluminescence (EL) display devices;
mobile phones; smartphones; television apparatus; sound
reproduction apparatus; computers and computer peripheral
devices; notebook computers; laptop computers; tablet
computers; personal computers; microcomputers; computer
monitors; touch panels for computers; electronic
communication apparatus equipped with semiconductor power
elements; electronic control apparatus equipped with
semiconductor power elements; electronic tags; integrated
circuit cards (smart cards); card readers for integrated
circuit cards or magnetic cards; card writers for integrated
circuit cards or magnetic cards; radio transmitters and
receivers; digital data memory devices; optical machines and
apparatus; video telephones; telecommunication machines and
apparatus for video telephone systems; coin counting or coin
sorting machines; photo copy machines; electronic
calculators; electronic desk calculators; voting machines;
flat panel display screens; head mounted displays; random
access memory (RAM) cards; memory card readers and memory
card writers; computer memory devices; data memory devices;
semiconductor memory devices; storage mediums with recorded
computer programs; computer storage mediums; electronic
circuits (not including those recorded with computer
programs); graphic boards; computer keyboards; motherboards;
electronic circuit boards; computer hardware; computer hard
disks; solid state drives; liquid crystal displays with a
touch sensor function; organic EL displays with a touch
sensor function; navigation devices; display devices for car
navigation systems; personal digital assistants in the shape
of a watch; mobile computers in the shape of a watch;
smartphones in the shape of a watch; electronic
publications; portable terminals for displaying electronic
publications; electronic control systems for automobiles;
measuring machines and apparatus for detecting information
relating to automobiles; applications for computer software
(commercially available and downloadable via
telecommunications lines); computer software (recorded);
magnetic cards with recorded computer programs; computer
programs (recorded); computer programs (commercially
available and downloadable via telecommunications lines);
computer software for cloud computing; downloadable software
for cloud computing. Technical research; testing, research and development in the
field of chemistry; testing, research and development
relating to science; testing, research and development
relating to machines and apparatus; testing, research and
development of metal materials; testing, research and
development in the fields of material science and electrical
engineering; testing, research and development relating to
electricity; testing, research and development relating to
telecommunication machines and apparatus; testing, research
and development relating to electronic circuits,
semiconductor power elements, integrated circuits and
large-scale integrated circuits; testing, research and
development relating to semiconductors; testing, research
and development relating to metal oxides, semiconductors,
electronic appliances and telecommunication machines and
apparatus; providing technical research information relating
to manufacture and processing of metal oxides,
semiconductors, electronic appliances and telecommunication
machines and apparatus; testing, investigation or research
relating to science; scientific analysis; providing
information on testing, investigation or research relating
to science; industrial development; providing information
relating to technical research; providing information and
data relating to scientific and technical research and
development; providing scientific and technical information;
technical consultancy relating to product development;
design of electronic circuits, semiconductor elements,
integrated circuits and large-scale integrated circuits;
providing consultancy or information relating to design of
electronic circuits, semiconductor elements, integrated
circuits and large-scale integrated circuits; design, coding
or maintenance of computer programs; providing
non-downloadable computer programs on data networks;
maintenance of computer software; design of computer
software; consultancy relating to design, coding or
maintenance of computer software; technological consultancy
and advisory services, namely providing introduction and
explanation relating to performance, operation methods of
electronic calculators, automobiles or devices for which
highly specialized knowledge, technique or experience is
needed in accurate operation according to purposes; leasing
computer software; installing computer programs; software as
a service [SaaS] featuring providing application software by
online; updating computer software; providing
non-downloadable computer software for cloud computing;
design, coding or maintenance of operating software for
accessing and using cloud computing network; leasing
operating software for accessing and using cloud computing
network; design and development of operating software for
accessing and using cloud computing network.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Solar batteries; batteries; storage batteries; lithium ion
secondary batteries; telecommunication machines and
apparatus; electronic communication apparatus and parts
thereof; electronic control apparatus and parts thereof;
semiconductor elements; electronic circuits; liquid crystal
displays; liquid crystal display panels; displays using
organic electroluminescence (EL) elements; memory chips;
memory modules; semiconductor memories; flash memory cards;
semiconductor integrated circuits including CPUs;
semiconductor chips for image processing; programmable
semiconductor chips; semiconductor elements for image
sensors; digital cameras and accessories or parts thereof;
digital video cameras and accessories thereof; CMOS cameras;
CCD cameras; touch panels; measuring machines, apparatus and
accessories or parts thereof; photographic machines,
apparatus and accessories thereof; cinematographic machines
and apparatus; electrodes for electronic components or
semiconductor elements; electrodes for lithium ion secondary
batteries; electrodes and parts thereof; on-board liquid
crystal display devices; on-board visual display units;
on-board organic electroluminescence (EL) display devices;
mobile phones; smartphones; television apparatus; sound
reproduction apparatus; computers and computer peripheral
devices; notebook computers; laptop computers; tablet
computers; personal computers; microcomputers; computer
monitors; touch panels for computers; electronic
communication apparatus equipped with semiconductor power
elements; electronic control apparatus equipped with
semiconductor power elements; electronic tags; integrated
circuit cards (smart cards); card readers for integrated
circuit cards or magnetic cards; card writers for integrated
circuit cards or magnetic cards; radio transmitters and
receivers; digital data memory devices; optical machines and
apparatus; video telephones; telecommunication machines and
apparatus for video telephone systems; coin counting or coin
sorting machines; photo copy machines; electronic
calculators; electronic desk calculators; voting machines;
flat panel display screens; head mounted displays; random
access memory (RAM) cards; memory card readers and memory
card writers; computer memory devices; data memory devices;
semiconductor memory devices; storage mediums with recorded
computer programs; computer storage mediums; electronic
circuits (not including those recorded with computer
programs); graphic boards; computer keyboards; motherboards;
electronic circuit boards; computer hardware; computer hard
disks; solid state drives; liquid crystal displays with a
touch sensor function; organic EL displays with a touch
sensor function; navigation devices; display devices for car
navigation systems; personal digital assistants in the shape
of a watch; mobile computers in the shape of a watch;
smartphones in the shape of a watch; electronic
publications; portable terminals for displaying electronic
publications; electronic control systems for automobiles;
measuring machines and apparatus for detecting information
relating to automobiles; applications for computer software
(commercially available and downloadable via
telecommunications lines); computer software (recorded);
magnetic cards with recorded computer programs; computer
programs (recorded); computer programs (commercially
available and downloadable via telecommunications lines);
computer software for cloud computing; downloadable software
for cloud computing. Technical research; testing, research and development in the
field of chemistry; testing, research and development
relating to science; testing, research and development
relating to machines and apparatus; testing, research and
development of metal materials; testing, research and
development in the fields of material science and electrical
engineering; testing, research and development relating to
electricity; testing, research and development relating to
telecommunication machines and apparatus; testing, research
and development relating to electronic circuits,
semiconductor power elements, integrated circuits and
large-scale integrated circuits; testing, research and
development relating to semiconductors; testing, research
and development relating to metal oxides, semiconductors,
electronic appliances and telecommunication machines and
apparatus; providing technical research information relating
to manufacture and processing of metal oxides,
semiconductors, electronic appliances and telecommunication
machines and apparatus; testing, investigation or research
relating to science; scientific analysis; providing
information on testing, investigation or research relating
to science; industrial development; providing information
relating to technical research; providing information and
data relating to scientific and technical research and
development; providing scientific and technical information;
technical consultancy relating to product development;
design of electronic circuits, semiconductor elements,
integrated circuits and large-scale integrated circuits;
providing consultancy or information relating to design of
electronic circuits, semiconductor elements, integrated
circuits and large-scale integrated circuits; design, coding
or maintenance of computer programs; providing
non-downloadable computer programs on data networks;
maintenance of computer software; design of computer
software; consultancy relating to design, coding or
maintenance of computer software; technological consultancy
and advisory services, namely providing introduction and
explanation relating to performance, operation methods of
electronic calculators, automobiles or devices for which
highly specialized knowledge, technique or experience is
needed in accurate operation according to purposes; leasing
computer software; installing computer programs; software as
a service [SaaS] featuring providing application software by
online; updating computer software; providing
non-downloadable computer software for cloud computing;
design, coding or maintenance of operating software for
accessing and using cloud computing network; leasing
operating software for accessing and using cloud computing
network; design and development of operating software for
accessing and using cloud computing network.
73.
SEPARATOR, SECONDARY BATTERY, AND A METHOD FOR MANUFACTURING SEPARATOR
A secondary battery with little deterioration is provided. A secondary battery with high safety is provided. A separator having excellent characteristics is provided. A separator achieving the secondary battery with high safety is provided. A novel separator is provided. In the separator, a polymer porous film and a layer including a ceramic-based material containing a metal oxide microparticle are stacked, the thickness of the layer including a ceramic-based material is greater than or equal to 1 μm and less than or equal to 100 μm, and the film thickness of the polymer porous film is greater than or equal to 4 μm and less than or equal to 50 μm.
H01M 50/451 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising layers of only organic material and layers containing inorganic material
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 50/403 - Manufacturing processes of separators, membranes or diaphragms
One embodiment of the present invention provides a display device from which a driver or a fellow passenger in a mobile body such as a vehicle can easily obtain desired information. One embodiment of the present invention is a display device including a display panel. The display panel is placed inside a mobile body including window glass. A film including a light-blocking layer is provided between the window glass and the display panel of the mobile body. By providing a driving unit controlling the display panel, the positional relationship between the window glass and the display panel is changed. Alternatively, by providing a driving unit controlling the film including the light-blocking layer, the positional relationship between the window glass and the film including the light-blocking layer is changed.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes an anode over a cathode with an EL layer sandwiched therebetween. The EL layer includes at least a light-emitting layer and an oxidation-resistant layer over the light-emitting layer. The EL layer has a side surface. The light-emitting device includes a block layer in contact with a top surface and the side surface of the EL layer. The cathode is in contact with the side surface of the EL layer with the block layer therebetween. The block layer includes a heterocyclic compound. In the light-emitting device with the above structure, the oxidation-resistant layer may include any one or a plurality of oxides of metals belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.
An object of one embodiment of the present invention is to achieve a manufacturing method which can increase capacity density of a secondary battery. Another object is to provide a manufacturing method of a highly safe or reliable secondary battery. The manufacturing method of electrodes (a positive electrode and a negative electrode) of a secondary battery includes a vibration treatment step for supplying vibration to the electrode and a press step for applying pressure to the electrode to compress an active material layer in the electrode. The vibration treatment step is performed before the press step.
A positive electrode active material with high charge and discharge capacity is provided. A novel positive electrode active material is provided. The positive electrode active material is manufactured in such a manner that after a cobalt compound (also referred to as a precursor) containing nickel, cobalt, and manganese is obtained by a coprecipitation method, a mixture obtained by mixing a lithium compound and the cobalt compound is heated at a first temperature; after the mixture is ground or crushed, heating at a second temperature that is a temperature higher than the first temperature is further performed; and after an additive is mixed, third heat treatment is performed. The first temperature is higher than or equal to 400° C. and lower than or equal to 700° C. The second temperature is higher than 700° C. and lower than or equal to 1050° C.
A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.
A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first light-emitting device, and a second light-emitting device. The top surfaces of the first insulating layer, the first conductive layer, and the second conductive layer are level or substantially level with one another. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode over the first conductive layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer, and the common electrode over the second conductive layer. The second insulating layer covers a side surface of each of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer.
An arithmetic device and an electronic device having small power consumption is provided. An arithmetic device and an electronic device capable of high-speed operation is provided. An arithmetic device and an electronic device capable of suppressing heat generation is provided. The arithmetic device includes a first arithmetic portion and a second arithmetic portion. The first arithmetic portion includes a first CPU core and a second CPU core. The second arithmetic portion includes a first GPU core and a second GPU core. The CPU cores each have a power gating function and each include a first data retention circuit electrically connected to a flip-flop. The first GPU core includes a second data retention circuit capable of retaining an analog value and reading out the analog value as digital data of two or more bits. The second GPU core includes a third data retention circuit capable of retaining a digital value and reading out the digital value as digital data of one bit. The first to third data retention circuits each include a transistor including an oxide semiconductor and a capacitor.
G06F 1/3234 - Power saving characterised by the action undertaken
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
G06T 1/20 - Processor architectures; Processor configuration, e.g. pipelining
A touch panel which is thin, has a simple structure, or is easily incorporated into an electronic device is provided. The touch panel includes a first substrate, a second substrate, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, liquid crystal, and an FPC. The first conductive layer has a function of a pixel electrode. The second conductive layer has a function of a common electrode. The third and fourth conductive layers each have a function of an electrode of a touch sensor. The FPC is electrically connected to the fourth conductive layer. The first, second, third, and fourth conductive layers and the liquid crystal are provided between the first and second substrates. The first, second, and third conductive layers are provided over the first substrate. The FPC is provided over the first substrate.
To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.
A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.
A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.
A display apparatus having a photoelectric conversion function with high sensitivity is provided. The light extraction efficiency of the display apparatus is increased. The display apparatus includes a light-emitting device, a light-emitting and light-receiving device, a first lens, and a second lens. The light-emitting device has a function of emitting light of a first color. The light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color and converting it into an electric signal. The light emitted by the light-emitting device is emitted to the outside of the display apparatus through the first lens. Light enters the light-emitting and light-receiving device from the outside of the display apparatus through the second lens.
The present invention provides a semiconductor device which achieves both low power consumption and high performance. This semiconductor device comprises a first conductive layer, a second conductive layer, a first semiconductor layer, a second insulating layer that is arranged on the first semiconductor layer, a third conductive layer that is arranged on the second insulating layer, and a first insulating layer that is sandwiched between the first conductive layer and the second conductive layer; the first insulating layer has a first opening which reaches the first conductive layer; the second conductive layer has a second opening; the first opening and the second opening overlap with each other when viewed in plan; the first semiconductor layer is in contact with the upper surface of the first conductive layer and the lateral surface of the first insulating layer in the first opening; the first semiconductor layer is in contact with the lateral surface of the second conductive layer in the second opening; the first semiconductor layer has a region which overlaps with the third conductive layer, with the second insulating layer being interposed therebetween; and the lateral surface of the first insulating layer in the first opening has a region where the angle between the lateral surface of the first insulating layer and the upper surface of the first conductive layer is not less than 10 degrees but less than 55 degrees.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H05B 45/60 - Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
H10K 50/10 - OLEDs or polymer light-emitting diodes [PLED]
87.
IONIC LIQUID, SECONDARY BATTERY, ELECTRONIC DEVICE, AND VEHICLE
A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 10/0567 - Liquid materials characterised by the additives
88.
METHOD FOR FORMING POSITIVE ELECTRODE ACTIVE MATERIAL AND SECONDARY BATTERY AND VEHICLE
A novel method for forming a positive electrode active material is provided. In the method for forming a positive electrode active material, a cobalt source and an additive element source are mixed to form an acidic solution; the acidic solution and an alkaline solution are made to react to form a cobalt compound; the cobalt compound and a lithium source are mixed to form a mixture; and the mixture is heated. The additive element source is a compound containing one or more selected from gallium, aluminum, boron, nickel, and indium.
A high-resolution display device is provided. The display device includes first and second light-emitting devices, first and second coloring layers, and first, second, and third insulators; the first coloring layer is positioned to overlap with the first light-emitting device; the second coloring layer is positioned to overlap with the second light-emitting device; the first light-emitting device and the second light-emitting device have a function of emitting white light; the first coloring layer and the second coloring layer have a function of transmitting visible light of different colors; the first light-emitting device includes a first conductive layer and a first light-emitting layer over the first conductive layer; the second light-emitting device includes a second conductive layer and a second light-emitting layer over the second conductive layer; the first insulator is in contact with at least part of a side surface of the first light-emitting device; the second insulator is in contact with at least part of a side surface of the second light-emitting device; the first insulator and the second insulator are positioned over the third insulator; and the third insulator is positioned to cover an end portion of the first conductive layer and an end portion of the second conductive layer.
A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G06F 1/16 - Constructional details or arrangements
H05K 5/00 - Casings, cabinets or drawers for electric apparatus
H05K 5/02 - Casings, cabinets or drawers for electric apparatus - Details
To provide a thin touch panel, a touch panel having a simple structure, a touch panel which can be easily incorporated into an electronic device, or a touch panel with a small number of components. The touch panel includes pixel electrodes arranged in a matrix, a plurality of signal lines, a plurality of scan lines, a plurality of first wirings extending in a direction parallel to the signal lines, and a plurality of second wirings extending in a direction parallel to the scan line. Part of the first wiring and part of the second wiring function as a pair of electrodes included in a touch sensor. The first wiring and the second wiring each have a stripe shape or form a mesh shape and are each provided between two adjacent pixel electrodes in a plan view.
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device has a plurality of memory cells, a first insulator, and a second insulator disposed on the first insulator. Each of the memory cells has a capacitance element and a transistor disposed on the capacitance element. At least a part of the capacitance element is disposed in a first opening provided in the first insulator. At least a part of the transistor is disposed in a second opening provided on the second insulator. The first opening has a region overlapping with the second opening. The diameter of the first opening is larger than the diameter of the second opening. In the adjacent memory cells, the interval at which capacitance elements are arranged coincides with the interval at which transistors are arranged.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Provided is a semiconductor device configured to allow miniaturization or an advanced degree of integration. This semiconductor device has a first transistor, a connection part, a first insulator, a second insulator, and first wiring. The connection part has a first electrode and a second electrode. The first transistor has second and third electrodes, a first semiconductor, a gate insulator, and a first gate electrode. The first insulator has a first opening that reaches the first wiring. The first electrode is in contact with a side surface in the first opening and an upper surface of the first wiring. The second electrode is in contact with the first electrode in the first opening. The second insulator has a second opening that reaches the second electrode. The third electrode is provided on the second insulator. The first semiconductor is in contact with the third electrode, a side surface in the second opening in the second insulator, and an upper surface of the second electrode. The gate insulator is in contact with the first semiconductor in the second opening. The first gate electrode faces the first semiconductor via the gate insulator.
H10B 12/00 - Dynamic random access memory [DRAM] devices
H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
Provided is a storage device that enables high integration. The storage device comprises a first transistor and a second transistor on the first transistor. The first transistor has a first oxide semiconductor that is on a substrate, a first conductor and second conductor that are on the first oxide semiconductor and separate from each other, a first insulator that is disposed on the first conductor and the second conductor and that has an opening which overlaps with a region between the first conductor and the second conductor, a second insulator that is disposed in the opening of the first insulator and on the first oxide semiconductor, and a third conductor that is disposed on the second insulator in the opening. The second transistor has a third insulator that is disposed on the first insulator and the third conductor and that has an opening, a fourth conductor that is disposed on the third insulator and that has an opening overlapping with the opening of the third insulator, a second oxide semiconductor that is disposed in the openings of the third insulator and the fourth conductor, a fourth insulator that is disposed on the second oxide semiconductor in the opening, and a fifth conductor that is disposed on the fourth insulator in the opening. Part of the second oxide semiconductor passes through the third insulator and is electrically connected with the third conductor.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
96.
POWER STORAGE DEVICE, BATTERY MANAGEMENT UNIT, AND ELECTRONIC DEVICE
A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.
H01G 11/82 - Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
A display apparatus having both a personal authentication function and a high resolution is provided. The display apparatus includes a display portion and a sensor portion. The display portion includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first EL layer. The second light-emitting element includes a second EL layer. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light. The light-receiving element has a function of detecting infrared light. A distance between the first EL layer and the second EL layer is less than or equal to 6 μm.
A high-resolution display apparatus having a function of sensing light is provided. A high-definition display apparatus having a function of sensing light is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a third light-emitting device, a first light-receiving device, and a second light-receiving device in a first pixel. The first light-emitting device has a function of emitting red light. The second light-emitting device has a function of emitting green light. The third light-emitting device has a function of emitting blue light. The first light-receiving device has a function of sensing light emitted from at least one of the three light-emitting devices. The second light-receiving device has a function of sensing infrared light.
A display device having a function of detecting an object that is in contact with or approaches a display portion is provided. The display device includes a light-emitting element and a light-receiving element. The light-emitting element includes a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode. The light-receiving element includes a second pixel electrode, a second functional layer, a light-receiving layer, the common layer, and the common electrode. The first functional layer includes one of a hole-injection layer and an electron-injection layer. The second functional layer includes one of a hole-transport layer and an electron-transport layer. The common layer has a function of the other of the hole-injection layer and the electron-injection layer in the light-emitting element and has a function of the other of the hole-transport layer and the electron-transport layer in the light-receiving element.
A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer containing an inorganic insulating material is provided between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer to face each other. The common electrode is provided along the side surface of the first EL layer, the side surface of the second EL layer, and a top surface of the insulating layer. A width of the insulating layer is larger than or equal to 2 times and smaller than or equal to 4 times a distance between the first pixel electrode and the second pixel electrode.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
