Disclosed in the embodiments of the present invention are a laser writing apparatus and method for programming magnetoresistive devices. The apparatus comprises: a substrate, a magnetoresistive sensor and a thermal control layer which are sequentially arranged in a stacked manner. A non-magnetic insulating layer for electrical isolation is provided between the magnetoresistive sensor and the thermal control layer. The magnetoresistive sensor is composed of a magnetoresistive sensing unit which is a multilayer thin-film stacked structure containing an anti-ferromagnetic layer. The laser writer programming apparatus is used during the laser writer programming phase, along with varied parameters of the thermal control layers and/or magnetoresistive sensors, to change the thermal gradient produced by the laser on the magnetoresistive sensor, to increase or decrease the temperature change of the magnetoresistive sensor at the same laser power, and the film parameters use d to do this include material composition and film thickness. Through the embodiments of this invention, high precision laser programming of a magneotresistive sensor is obtained, with improved magnetoresistive sensor manufacturability, improved magnetoresistive sensor noise performance, and with improved magnetoresistive sensor detectability.
G01R 3/00 - Appareils ou procédés spécialement adaptés à la fabrication des appareils de mesure
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
Disclosed in the present invention are a capillary channel environmental sensor and a preparation method therefor. The capillary channel environmental sensor comprises a transfer cavity and at least one capillary channel. The cross sectional area of the transfer cavity is greater than the cross sectional area of the capillary channel, and one end of the capillary channel is connected with the transfer cavity; an elastic transfer diaphragm is provided between the transfer cavity and an external measurement environment. A positioned droplet is provided in the interior of the capillary channel, the positioned droplet is in tight contact with the inner walls of the capillary channel and the positioned droplet is in tight contact with a transfer medium. By means of the transfer cavity and the capillary channel that are connected to one another, because the cross sectional area of the transfer cavity is larger than the cross sectional area of the capillary channel, differences in volume between the transfer cavity and the capillary channel are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. Because the positioned droplet is provided in the capillary channel, and the capillary channel environmental sensor comprises a magnetic sensing element, the magnetic sensing element causes, on the basis of movement of the positioned droplet, the change in displacement through an intermediate variable to provide high-sensitivity and low-power detection.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
A type of rotating disk magnetic field probe (1) comprising: a non-magnetic rotating disk (2), 4N first soft ferromagnetic sectors (3), M second soft ferromagnetic sectors (4), a reference signal generator, an X-axis magnetoresistive sensor (7, 8), a Y-axis magnetoresistive sensor (5,6), and a Z-axis magnetoresistive sensor (9). Both the first soft ferromagnetic sectors (3) and the second soft ferromagnetic sector (4) are located on the non-magnetic rotating disk (2). In operation, the non-magnetic rotating disk (2) rotates about a Z-axis at a frequency f. An external magnetic field is modulated by the first soft ferromagnetic sector (3) into an X-axis magnetic field sensed component and a Y-axis magnetic field sensed component having a frequency of 4N×f, and is modulated by the second soft ferromagnetic field sectors into a Z-axis magnetic field sensed component having a frequency of M×f. The X-axis sensed magnetic field component, the Y-axis sensed magnetic field component, and the Z-axis sensed magnetic field component respectively are converted into output signals by means of the X-axis magnetoresistive sensor (7, 8) the Y-axis magnetoresistive sensor (5, 6) and the Z-axis magnetoresistive sensor (9). The reference signal generator respectively outputs a first reference signal having a frequency of 4N×f and a second reference signal having a frequency of M×f. The first reference signal, the second reference signal, and the measurement signals are demodulated by an external processing circuit to output magnetic field values Hx, Hy and Hz.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
4.
MEMS ENVIRONMENTAL SENSOR AND PREPARATION METHOD THEREFOR
The disclosed invention is a MEMS environmental sensor and preparation method thereof. A transfer cavity is produced in the middle of a transfer substrate of a MEMS environmental sensor, and a transfer medium is located inside the transfer cavity. The surface area of an input port is larger than the surface area of an output port. An elastic transfer membrane is provided on the surface of the input port, and an elastic pressure membrane is provided on the surface of the output port. A load bearing cavity is provided in a load bearing substrate, a magnetic sensing element is positioned inside the load bearing cavity, and the load bearing cavity partially overlaps with the output port. The surface area of the input port of the transfer cavity is larger than the surface area of the output port, and on the basis of Pascal's principle, differences in the volume of the transmission cavity are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. In addition, because the output port and the end of the output port at least partially overlap, and a magnetic sensing element is arranged in the load bearing cavity, a change in displacement is produced, producing a change in a magnetic field, that is converted into a change in electrical resistance, which provides high-sensitivity and low-power detection.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
5.
Magnetic sensor packaging structure with hysteresis coil
A magnetic sensor packaging structure with a hysteresis coil comprising a substrate, a sensor chip, a spiral hysteresis coil on the substrate, and wire bonding pads. The sensor bridge arms are composed of magnetoresistive sensing elements. The sensor bridge arms are deposited on the sensor chip, and the sensor bridge arms are electrically interconnected to form a magnetoresistive sensor bridge that is located on the hysteresis coil. The magnetic field generated by the spiral hysteresis coil is collinear with a sensitive axis of the sensor bridge. The magnetoresistive sensor bridge is located on the substrate and encapsulated. By placing the spiral hysteresis coil on the substrate, it is capable of supporting larger currents with smaller resistance value. This allows the sensor hysteresis to be effectively eliminated. In addition, the packaging structure manufacturing process is simple and cost effective.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
6.
ELECTROMECHANICAL MODULATION MAGNETORESISTIVE ROTARY MAGNETIC FIELD PROBE
A magnetoresistive magnetic field probe with rotating electromechanical modulator (1) comprises: a bulk cylindrical base (11), wherein the bulk cylindrical base (11) has a cavity structure, and a center axis of the bulk cylindrical base (11) overlaps with a z-axis of a cylindrical coordinate system; a first magnetic tile (12) and a second magnetic tile (13) attached to an outer side wall of the bulk cylindrical base (11); and a magnetoresistive sensor (14) and a reference signal generator (15) located on the center axis of the bulk cylindrical base (11). During operation, the bulk cylindrical base (11) rotates about the z-axis at a frequency f, and the first magnetic tile (12) and the second magnetic tile (13) modulate an external magnetic field into a sensed magnetic field having a frequency 2f, and a measurement signal having a frequency 2f is output via the magnetoresistive sensor (14). The reference signal generator (15) outputs a reference signal having a frequency 2f. The reference signal and the measurement signal are demodulated by an external processing circuit (4) to output a magnetic field value, so as to provide a measurement of the external magnetic field with superior signal-to-noise ratio. Through adding a detachable rotating sleeve to the magnetoresistive sensor (14), superior signal-to-noise ratio measurement of the external magnetic fields can be realized. This invention is small in size with a simple structure, and the complexity of the process is also greatly reduced, enabling lower cost.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
7.
MAGNETIC PROBE-BASED CURRENT MEASUREMENT DEVICE, AND MEASUREMENT METHOD
A magnetic probe-based current measurement device and measurement method is disclosed. The device comprises a conductor for a current under test, a magnetic probe, a magnetic bias structure, and a programmable chip. A conductor has a first axis, a second axis, and a third axis. The conductor is provided with through holes. The direction of the through holes are parallel to the third axis. Vertical projections of the through holes on a first cross section are symmetric about the first axis. At least one of the through holes has a center position located on the first axis. And/or every pair of the through holes have center positions that are symmetric about the first axis. The magnetic probe is provided within the through holes, and is electrically connected to the programmable chip. A sensitive center position of the magnetic probe is located on the first cross section. A vertical projection of the magnetic probe on the first cross section is symmetric about the first axis. The magnetic bias structure is provided within the through holes. A magnetization direction of the magnetic bias structure is perpendicular to a sensitive direction of the magnetic probe. The device is small size and has the advantages of high measurement accuracy, and high adaptability
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
8.
GAIN-CONTROLLABLE MAGNETORESISTIVE ANALOG AMPLIFIER
A gain-controllable magnetoresistive analog amplifier comprises a substrate located in an X-Y plane, an output signal magnetoresistive sensor located on the substrate, and an input signal coil and a gain adjustment coil. The input signal coil and the gain adjustment coil are respectively located on two side surfaces of the output signal magnetoresistive sensor. The gain adjustment coil is used to input a gain signal by the generation of a gain magnetic field, in order to set the gain the magnetic field is applied along a magnetization direction of a free layer of the output signal magnetoresistive sensor, thereby adjusting the slope of the input resistance-magnetic field transfer curve of the output signal magnetoresistive sensor. The input signal coil is used for inputting a current signal to generate an input magnetic field, in order to apply the input magnetic field to a magnetization direction of a pinned layer of the output signal magnetoresistive sensor, thereby controlling the gain signal to adjust a gain factor of an output signal after the current signal passes through the output signal magnetoresistive sensor. This magnetoresistive analog amplifier provides isolation between input signals, output signals, and controllable gain signals.
H03F 1/34 - Circuits à contre-réaction avec ou sans réaction
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
Disclosed is linear displacement absolute position encoder used for measuring displacement of a tested apparatus. The linear displacement absolute position encoder comprises a base, a magnetoresistive sensor array, an encoding strip, and a back magnet. The encoding strip is fixed on the base and extends in the direction of a rail of the tested apparatus. The encoding strip is a magnetic material block having recess and protrusion for identifying encoding information of different positions. The magnetoresistive sensor array is arranged between the encoding strip and the back magnet in a non-contact manner. The back magnet is used for generating a non-uniform magnetic field around the encoding strip so as to magnetize the encoding strip. The magnetoresistive sensor array is used for acquiring the position encoding information of the encoding strip by detecting magnetic field information of the encoding strip. The encoder is low cost and can monitor large distances.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
10.
HIGH-SENSITIVITY MAGNETORESISTIVE ACOUSTIC WAVE SENSOR AND ARRAY DEVICE
A magnetoresistive acoustic wave sensor with high sensitivity and an array device thereof is disclosed, in which a magnetoresistive acoustic wave sensor comprises a protective tube shell, a magnetic vibration assembly, and a magnetoresistive chip located inside the protective tube shell. The protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly. The plane where the magnetoresistive sensor chip is located is perpendicular to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive sensor chip is located in the plane where magnetoresistive sensor chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located. Alternatively, the plane where the magnetoresistive sensor chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive sensor chip is located in the plane where the magnetoresistive sensor chip is located, and is parallel to the plane where the magnetic vibration assembly is located. The magnetoresistive acoustic wave sensor with high sensitivity and an array device thereof is of small size, high sensitivity, low power consumption, high response speed, good stable temperature, large response frequency bandwidth, excellent low-frequency response and the like.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
11.
HYDROGEN GAS SENSOR UTILIZING ELECTRICALLY ISOLATED TUNNELING MAGNETORESISTIVE STRESS SENSING ELEMENTS
A hydrogen gas sensor utilizing electrically isolated tunneling magnetoresistive stress sensing elements is disclosed. The hydrogen gas sensor comprises: a deformable substrate, a magnetoresistive bridge stress sensor located on the deformable substrate, an electrical isolation layer covering the magnetoresistive bridge stress sensor, a magnetic shielding layer located on the electrical isolation layer, and a hydrogen sensing layer located above the deformable substrate. The hydrogen sensing layer is located in a plane perpendicular to the deformation of the substrate covering the electrical isolation layer. The hydrogen sensing layer is used for absorbing or desorbing hydrogen gas to generate expansion or contraction deformation and cause a stress change of the deformable substrate. The magnetoresistive bridge stress sensor is used for measuring a hydrogen gas concentration utilizing the stress change of the deformable substrate. It results in a hydrogen gas sensor with improved performance.
G01N 27/72 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
12.
HYDROGEN GAS SENSOR BASED ON ELECTRICALLY ISOLATED TUNNEL MAGNETORESISTIVE SENSITIVE ELEMENT
A hydrogen gas sensor utilizing electrically isolated tunneling magnetoresistive sensing elements is provided. The hydrogen gas sensor comprises: a substrate in an X-Y plane, tunneling magnetoresistive sensors located on the substrate, and a hydrogen sensing layer located on the tunnel magnetoresistive sensors. The hydrogen sensing layer and the tunneling magnetoresistive sensor are electrically isolated from each other. The hydrogen sensing layer includes a multi-layer thin film structure formed from palladium layers and ferromagnetic layers, wherein the palladium layers are used for absorbing hydrogen in the air that causes a change in the orientation angle of a magnetic anisotropy field in each of the ferromagnetic layers in the X-Z plane into an X-axis direction. The tunnel magnetoresistive sensors are used for detecting a magnetic field signal of the hydrogen sensing layer, wherein the magnetic signal determines the hydrogen gas concentration. This hydrogen gas sensor ensures measurement safety.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
A wall-mounted magnetic level gauge for material storage containers, the magnetic level gauge comprises: A magnetic displacement assembly, which is located on the sidewall of the material storage container and generates a mechanical displacement in response to the level of a material in the material storage container. It further includes a magnetic sensor assembly, comprising a protective housing, a magnetoresistive chip, and a processing module located within the protective housing. The protective housing is fixed on the side wall of the material storage container. The magentoresistive chip is located at a side of the processing module facing a magnet displacement assembly. The magnetic sensor assembly is used to sense a magnetic field produced by the magnet displacement assembly to determine the level of the material in the material storage container. The magnet displacement assembly displaces the magnet according to the level of the material. The magnetoresistive chip senses a magnetic field change of the magnet displacement assembly to determine the level of the material accordingly. The magnetic level gauge has the advantages of simple structure, low power consumption, high sensitivity, and low cost. It is suitable for the solid and liquid material measurement.
G01F 23/72 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs du type à flotteur libre en utilisant des moyens d'indication actionnés magnétiquement
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
This invention describes a magnetoresistive inertial sensor chip, comprising a substrate, a vibrating diaphragm, a magnetic field sensing magnetoresistor and at least one permanent magnet thin film. The vibrating diaphragm is located on one side surface of the substrate. The magnetic field sensing magnetoresistor and the permanent magnet thin film are set on the surface of the vibrating diaphragm displaced from the base of the substrate. A contact electrode is also arranged on the surface of the vibrating diaphragm away from the base of the substrate. The magnetic field sensing magnetoresistor is connected to the contact electrode through a lead. The substrate comprises a cavity formed through etching and either one or both of the magnetic field sensing magnetoresistors and the permanent magnet thin film are arranged in a vertical projection area of the cavity in the vibrating diaphragm portion. A magnetic field generated by the permanent magnet thin film changes in the sensing direction of the magnetic field sensing magnetoresistor of magnetoresistive inertial sensor chip, which changes the resistance valve of the magnetic field sensing magnetoresistor, thereby producing a change in an output electrical signal. This magnetoresistive inertial sensor chip uses the high-sensitivity and high-frequency response characteristics of a magnetoresistor to improve the output signal strength and frequency response, thereby facilitating the detection of small and high frequency pressure, vibration, or acceleration changes.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
15.
DIGITAL LIQUID LEVEL SENSOR UTILIZING CROSS-POINT MAGNETORESISTIVE SENSOR ARRAY
Disclosed is a digital liquid level sensor based on a magnetoresistive sensor cross-point array, including: a plurality of TMR magnetic sensor chips; a microcontroller, a row decoder, and a column decoder, wherein the microcontroller is electrically connected to the row decoder and the column decoder, the TMR magnetic sensor chips include a plurality of MTJ elements, diodes are connected between each row of MTJ elements and a row lead or a column lead, the TMR magnetic sensor chips are addressed by means of data decoded by the row decoder and the column decoder and on the basis of the equation Address=m+[M×(n−1)], Address representing an address value, and m representing the value of a current row, and the microcontroller is used for scanning addresses of the TMR magnetic sensor chips for the address of an MTJ element in the highest active state, converting the address value into a liquid level value in a linear proportional relationship therewith, and transmitting the liquid level value to an output interface; and a permanent magnet and a protective tube. The power consumption of a sensor element is greatly minimized by powering only one sensor chip element each time.
G01F 23/72 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs du type à flotteur libre en utilisant des moyens d'indication actionnés magnétiquement
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01F 23/68 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs du type à flotteur libre en utilisant des moyens d'indication actionnés électriquement
16.
Magnetoresistive hydrogen sensor and sensing method thereof
A magnetoresistive hydrogen sensor and sensing method thereof, wherein the hydrogen sensor comprises a substrate located in an X-Y plane, magnetoresistive sensing units and magnetoresistive reference units located on the substrate. The magnetoresistive sensing units are electrically connected to form a sensing arm, and the magnetoresistive reference units are electrically connected to form a reference arm. The sensing arm and the reference arm are electrically interconnected to form a referenced bridge structure. The magnetoresistive sensing units and the magnetoresistive reference units may be AMR units having the same magnetic multilayer thin film structure, GMR spin valves, or GMR multilayer film stacks having the same magnetic multilayer thin film structure. The magnetoresistive sensing units and the magnetoresistive reference units are respectively covered with a Pd layer, and a passivating insulation layer is deposited over the Pd layer of the magnetoresistive reference units. The magnetic multilayer thin film structure is made into a serpentine strip circuit by a semiconductor micromachining process. The hydrogen detecting method comprises placing the hydrogen sensor in a gas environment containing hydrogen, the Pd layers covering in the magnetoresistive sensing units absorb hydrogen to change the perpendicular magnetic anisotropy of ferromagnetic layers in the magnetic multilayer thin film structures of the magnetoresistance sensing units, which makes the magnetic moment of the ferromagnetic layer rotate to produce a change in the magnetoresistance value that correlates to the hydrogen concentration. The resulting change of the magnetoresistance value changes the output voltage value of the referenced bridge structure, and this change of the output voltage value of the referenced bridge structure is used to measure the hydrogen concentration.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01N 27/04 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance
17.
NON-DESTRUCTIVE TESTING DEVICE FOR DETECTING DAMAGE TO STEEL WIRE ROPE
A non-destructive testing device for detecting damage to a steel wire rope, including a bushing which limits a lower shell and an upper shell through a limiting groove. The lower shell is connected to the upper shell via an opening and closing structure. An air bag is wrapped around the bushing. A PCB is fixed on the upper shell or the lower shell. The PCB is connected to a guide wheel via an electrical connector. A magnetoresistive sensor array is arranged inside the air bag and is uniformly arranged in a circumferential direction of the bushing. A steel wire rope passes through the magnetoresistive sensor array. And when the steel wire rope moves, it drives the guide wheel to rotate and triggers the acquisition of a command. Guide wheel is set with a position coder which is used to calculate a relative position of movement of the steel wire rope. The PCB is connected to a single chip microcomputer via a peripheral interface. And the single chip microcomputer is used to calculate a differential signal of N adjacent magnetoresistive sensors and to determine whether the steel wire rope is damaged. The capability of this non-destructive testing device for detection of a broken wire, a narrowed diameter, and deep damage of the steel wire rope is improved.
G01N 27/82 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques pour rechercher la présence des criques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A three-axis upstream-modulated low-noise magnetoresistive sensor comprises an X-axis magnetoresistive sensor, a Y-axis magnetoresistive sensor, and a Z-axis magnetoresistive sensor, wherein the X, Y, and Z-axis magnetoresistive sensors respectively comprise X, Y, and Z-axis magnetoresistive sensing unit arrays, X, Y, and Z-axis soft ferromagnetic flux concentrator arrays, and X, Y, and Z-axis modulator wire arrays. The X, Y, and Z-axis magnetoresistive sensing unit arrays are electrically interconnected into X, Y, and Z-axis magnetoresistive sensing bridges respectively. The X, Y, and Z-axis modulator wire arrays are electrically interconnected into individual two-port X, Y, and Z-axis excitation coils. In order to measure external magnetic fields, the two-port X, Y, and Z-axis excitation coils are separately supplied with high-frequency alternating current at a frequency f, from a current supply. The X-axis magnetoresistive sensor, Y-axis magnetoresistive sensor, and Z-axis magnetoresistive sensor each output harmonic signal components having a frequency of 2f, which are then demodulated to obtain the X, Y, and Z-axis low-noise signals. This device is small in size, has low noise, and a simple structure.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A resettable bipolar switch sensor is disclosed which comprises a bipolar magnetic hysteresis switch sensor, a reset coil, an ASIC switch circuit and a power reset circuit. The bipolar magnetic hysteresis switch sensor comprises a substrate and a magnetoresistive sensing arm located on the substrate. The magnetoresistive sensing arm is of a two-port structure composed of one or more magnetoresistive sensing unit strings arranged in series, parallel, or series-parallel. The magnetization direction of a free layer of a TMR magnetoresistive sensing unit is determined by an anisotropy field Hk, and together with the magnetization direction of a reference layer and the applied magnetic field, it can orient in an N or S direction. The reset coil is located between the substrate along with the magnetoresistive sensing unit, or it is located on a lead frame below the substrate. The direction of the reset magnetic field is either N or S. The ASIC switch circuit comprises a biasing circuit module, a reading circuit module, and an output circuit module. The power reset circuit is connected to the reset coil. This device has the advantages of low power consumption and small size in addition to the capability to set initial state of the switch sensor.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A modulated magnetoresistive sensor consists of a substrate located on a substrate in an XY plane, magnetoresistive sensing elements, a modulator, electrical connectors, an electrical insulating layer, and bonding pads. The sensing direction of the magnetoresistive sensing elements is parallel to the X axis. The magnetoresistive sensing elements are connected in series into a magnetoresistive sensing element string. The modulator is comprised of multiple elongated modulating assemblies. The elongated modulating assemblies consist of three layers—FM1 layer, NM layer, and FM2 layer. The ends of the elongated modulating assemblies are electrically connected to form a serpentine current path. The electrical insulating layer is set between the elongated modulating assemblies and the magnetoresistive sensing elements to separate the elongated modulating assemblies from the magnetoresistive sensing elements. The current modulates the permeability of the elongated modulating assemblies, and it is regulated in order to keep the modulated signal in the linear range of the magnetoresistive sensors. This technique suppresses sensor noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
21.
Single chip high-sensitivity magnetoresistive linear sensor
The present invention discloses a single-chip high-sensitivity magnetoresistive linear sensor, which comprises a substrate located in the X-Y plane and a soft ferromagnetic flux concentrator array located on the substrate. The soft ferromagnetic flux concentrator array comprises several soft ferromagnetic flux concentrators, wherein there is a gap between each two adjacent soft ferromagnetic flux concentrators. The +X and −X magnetoresistive sensing unit array respectively comprises +X and −X magnetoresistive sensing units located in the gaps. The +X and −X magnetoresistive sensing units are electrically interconnected to form a push pull X-axis magnetoresistive sensor. Each of the magnetoresistive sensing units that have the same magnetic field sensing direction are arranged in adjacent locations. The magnetoresistive sensing units are all MTJ magnetoresistive sensor elements, and each has the same magnetic multi-layer film structure. Laser magnetic annealing is used to scan and prepare the magnetic sensing array. The invention has the advantages of small size, high precision and low power consumption.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
22.
Low-noise magnetoresistive sensor having multi-layer magnetic modulation structure
A low-noise magnetoresistive sensor includes a substrate and an array of magnetic modulation structures on the substrate. The structure includes upper and lower soft ferromagnetic layers and a conductive metal layer in the middle. The two ends of the structure are connected to form a two-port excitation coil. Adjacent structures have opposite current directions. A magnetoresistive sensing unit is located above or below and is centered in the gap between the structures. The sensitive direction of the sensing units is perpendicular to a long direction of the structures. An array of sensing units is electrically connected to form a magnetoresistive sensor, and the sensor is connected to the sensor bond pads. When measuring an external magnetic field, an excitation current is applied to the excitation coil, and the output of the voltage or current signal of the magnetoresistive sensor is demodulated to produce a low-noise voltage signal.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A single-chip two-axis magnetoresistive angle sensor comprises a substrate located in an X-Y plane, a push-pull X-axis magnetoresistive angle sensor and a push-pull Y-axis magnetoresistive angle sensor located on the substrate. The push-pull X-axis magnetoresistive angle sensor comprises an X push arm and an X pull arm. The push-pull Y-axis magnetoresistive angle sensor comprises a Y push arm and a Y pull arm. Each of the X push, X pull, Y push arm, and Y pull arms comprises at least one magnetoresistive angle sensing array unit. The magnetic field sensing directions of the magnetoresistive angle sensing array units of the X push, X pull, Y push, and Y pull arms are along +X, −X, +Y and −Y directions respectively. Each magnetoresistive sensing unit comprises a TMR or GMR spin-valve having the same magnetic multi-layer film structure. A magnetization direction of an anti-ferromagnetic layer is set into a desired orientation through the use of a laser controlled magnetic annealing, and a magnetic field attenuation layer can be deposited in the surface of the magnetoresistance angle sensing unit.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetoresistive sensor with a compensating coil comprising a silicon substrate, collection of MR sensor units disposed on the silicon substrate, collection of rectangular soft ferromagnetic flux concentrators, serpentine compensating coil, connecting circuit, and collection of bond pads used for electrical connections. The MR sensor units are interconnected to form a push-pull sensor bridge. The MR sensor units are disposed below the gap between two adjacent soft ferromagnetic flux concentrators. The serpentine compensating coil has a positive current strap over the MR sensor units and a negative current strap under the soft ferromagnetic flux concentrators. The MR sensor bridge and the serpentine compensating coil are connected through bond pads and covered with an encapsulation structure. The magnetoresistive sensor also comprises a spiral initialization coil placed on a substrate within the encapsulating structure. A sensor chip is disposed on the initialization coil, which is used for reducing magnetic hysteresis.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A balanced magnetoresistive frequency mixer comprises a first spiral coil, a second spiral coil, a balanced magnetoresistive sensor bridge, and a magnetic shielding layer. The coils are located between the magnetic shielding layer and the sensor bridge. The sensor bridge comprises a magnetoresistive full bridge consisting of four bridge arms and a balancing bridge arm connected to the power supply end of the full bridge. The four bridge arms contain pairs located in a first sub region and a second sub region above or below the first spiral coil, the balancing arm is located in a third sub region above or below the second spiral coil, a first frequency signal is input into the first spiral coil, a second frequency signal is input into the second spiral coil, and a frequency-mixed signal is output from a signal output end of the full bridge.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
26.
Magnetoresistive sensor wafer layout used for a laser writing system, and corresponding laser scanning method
A magnetoresistive sensor wafer layout scheme used for a laser writing system and laser scanning method are disclosed. The layout scheme comprises a magnetoresistive multilayer film including an antiferromagnetic pinning layer arranged into a rectangular array of sensor dice on the wafer surface. Pinning layers of magnetoresistive sensing units are magnetically oriented and directionally aligned by the laser writing system. Sensing units are electrically connected into bridge arms electrically connected into a magnetoresistive sensor. Magnetoresistive sensing units in the dice are arranged into at least two spatially-isolated magnetoresistive orientation groups. In the magnetoresistive orientation groups, pinning layers of the sensing units have an angle of magnetic orientation of 0-360 degrees. Angles of magnetic orientation of two adjacent magnetoresistive orientation groups are different. Each orientation group is adjacent to an orientation group with the same angle of magnetic orientation in at least one adjacent die.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G06F 30/392 - Conception de plans ou d’agencements, p.ex. partitionnement ou positionnement
27.
Magnetoresistive sensor package with encapsulated initialization coil
A magnetoresistive sensor with encapsulated initialization coil comprises a packaging structure, at least one pair of sensor chips, a spiral initialization coil, a set of wire bonding pads, an ASIC specific integrated circuit and an encapsulation layer. The spiral initialization coil is located on a PCB substrate of the encapsulation structure. Each set of sensor chips comprises two sensor chips, wherein each of the sensor chips comprises two groups of magnetoresistive sensing unit strings. The magnetoresistive sensing unit strings located on the sensor chip are connected to form a magnetoresistive sensor bridge. The application specific integrated circuit, ASIC and the magnetoresistive sensor bridge are electrically interconnected. The sensor chips are located above the spiral initialization coil placed circumferentially along the surface of the spiral initialization coil. The wire bonding pad and the ASIC are electrically interconnected. This sensor design reduces the sensor hysteresis and offset generated by magnetic domains in flux concentrators. It is easy to manufacture at low cost.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
28.
Anisotropic magnetoresistive (AMR) sensor without set and reset device
An anisotropic magnetoresistive (AMR) sensor without a set and reset device may include a substrate, an exchange bias layer, an AMR layer and a collection of barber-pole electrodes. The exchange bias layer may be deposited on the substrate and the AMR layer may be deposited on the exchange bias layer. The AMR layer may include multiple groups of AMR strips, and each group may include several AMR strips. The barber-pole electrodes may be arranged on each AMR strip. The AMR sensor achieves coupling by using the exchange bias layer, without requiring a reset/set coil. Because a coil is not used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, providing improved yield and lower cost.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
29.
TMR high-sensitivity single-chip push-pull bridge magnetic field sensor
A magnetic field sensor comprises a substrate and two comb-shaped soft ferromagnetic flux concentrators with an interdigitated structure formed on the substrate. The concentrators comprise N and N−1 rectangular comb teeth and corresponding comb seats wherein N is an integer greater than 1. Gaps are formed between the comb teeth of one concentrator and the comb seat of the other concentrator in an X direction. Adjacent comb teeth in a +Y direction form 2m−1 odd space gaps and 2m even space gaps. Here, m is an integer greater than zero and less than N. Push and pull magnetoresistive sensing element strings are located respectively in the odd space gaps and the even space gaps, and are electrically interconnected into a push-pull bridge. The magnetization alignment directions of the ferromagnetic pinned layer of the magnetic sensing element strings are Y direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
30.
Single-chip high-magnetic-field X-axis linear magnetoresistive sensor with calibration and initialization coil
A single-chip high-magnetic-field X-axis linear magnetoresistive sensor with a calibration and an initialization coil, comprising a high magnetic field single-chip referenced bridge X-axis magnetoresistive sensor, a calibration coil, and an initialization coil, wherein the calibration coils are planar coils, and the initialization coils are planar or three-dimensional coils. The planar calibration coils and the planar initialization coils can be placed above a substrate and below the magnetoresistive sensor units, between the magnetoresistive sensor units and the soft ferromagnetic flux guides, above the soft ferromagnetic flux guides, or at gaps between the soft ferromagnetic flux guides. The three-dimensional initialization coil is wound around the soft ferromagnetic flux guides and magnetoresistive sensor units. The calibration coils and the initialization coils generate a calibration magnetic field paralleled the direction of pinned layer and a uniform initialization magnetic field in the direction of the free layer respectively at the location of the magnetoresistive sensor units. Through controlling the current of the calibration coils and the initialization coils, the calibration and initialization of the magnetic state of the single-chip X-axis linear magnetoresistive sensor can be performed.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetoresistive relay, comprising a substrate, a magnetic excitation coil, a magnetoresistive sensor, and switch integrated circuit which are placed on a substrate, which further includes an excitation signal input electrode, an excitation signal output electrode, a switch circuit positive output electrode, a switch circuit negative output electrode, a power input electrode, and a ground electrode. The ends of the magnetic excitation coil are each connected with the excitation signal input electrode and the excitation signal output electrodes. The signal from the magnetoresistive sensor is sent to the switch integrated circuit. The positive switch circuit output electrode and the switch circuit negative electrode are respectively connected with the switch integrated circuit. The power input ends and the ground ends of the switch integrated circuit and the magnetoresistive sensor are respectively connected with the power input electrode and the ground electrode. During operation, the magnetic field from the excitation coil provides an on/off signal, and this signal is used to change the magnetoresistance of the magnetoresistive sensor, the switch integrated circuit receives the signal from the magnetoresistive sensor, and from this the external output switching action is realized. This magnetoresistive relay is easy to operate, and it has low power consumption, small size, and long life span.
H03K 17/90 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01H 47/02 - Circuits autres que ceux appropriés à une application particulière du relais et prévue pour obtenir une caractéristique de fonctionnement donnée ou pour assurer un courant d'excitation donné en vue de modifier le fonctionnement du relais
H01L 43/08 - Résistances commandées par un champ magnétique
H03K 17/689 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ avec une isolation galvanique entre le circuit de commande et le circuit de sortie
An interdigitated Y-axis magnetoresistive sensor, comprising a substrate, and located on the substrate is a first comb-shaped soft ferromagnetic flux guide, a second comb-shaped soft ferromagnetic flux guide, and a push-pull magnetoresistive bridge sensing unit. It also may include a calibration and/or an initialization coil. The first and the second comb-shaped soft ferromagnetic flux guides are formed into an interdigitated shape. The gaps between a second comb tooth and two adjacent the first comb teeth are the first gap and the second gap. Furthermore, a pair of gaps are formed between the second come tooth and the base of the first comb as well as between the first comb tooth and the second comb tooth base. A push magnetoresistive unit string and a pull magnetoresistive unit string are alternately placed in the first gap and the second gap, respectively. The resulting magnetoresistive sensing unit senses the magnetic field along the X-axis. The calibration coil comprises straight calibration conductors that are parallel to the magnetoresistive sensing unit string. The initialization coil is comprised of straight initialization conductors that are perpendicular to the magnetoresistive sensing unit string. As a result of the interdigitated soft ferromagnetic flux guides, Y-axis magnetic field measurement is enabled. The present design is easy to implement, has high-gain, and low power consumption.
B82Y 25/00 - Nanomagnétisme, p.ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/08 - Résistances commandées par un champ magnétique
33.
Rapid thermal processing method and apparatus for programming the pinned layer of spintronic devices
A rapid thermal processing method and apparatus used for programming the pinned layer of spintronic devices, the apparatus comprising a rapid thermal annealing light source, a reflective cover, a magnet, a wafer, and a substrate. The light source is used for heating the substrate. The reflective cover at least comprises a transparent insulating layer and a reflective layer. The magnet is used to produce a constant magnetic field. An antiferromagnetic layer on a wafer may be locally programmed by controlling the exposure time, for heating a specific area on the wafer to a temperature above the blocking temperature of the antiferromagnetic layer, and then turning off the magnetic field after the heating area has cooled in the presence of the applied magnetic field. This rapid thermal processing method is used to improve the spatial resolution of laser annealing. It provides excellent performance, and it is suitable for mass production.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
A push-pull X-axis magnetoresistive sensor, comprising: a substrate upon which an interlocked array of soft ferromagnetic flux concentrators and a push-pull magnetoresistive sensor bridge unit are placed. It further may comprise calibration coils and/or initialization coils. At least one of each of the soft ferromagnetic flux concentrators is present such that an interlocking structure may be formed such that there are alternately interlocked and non-interlocked gaps along the X direction. Push/pull magnetoresistive sensing unit strings are respectively located in the interlocked and non-interlocked gaps and are electrically connected to form a push-pull magnetoresistive bridge sensing unit. This magnetoresistive sensing unit is sensitive to magnetic field along the X direction. The calibration coils and initialization coils are respectively compromised of straight calibration conductors and straight initialization conductors that run parallel and perpendicular to the push-pull magnetoresistive sensing unit strings. The structure of this push-pull X-axis magnetoresistive sensor is simple to implement. It has the advantages of high magnetic field sensitivity comparing to a referenced bridge X-axis magnetoresistive sensor as well as low power consumption.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
35.
Integrated current sensor using Z-axis magnetoresistive gradiometer and lead frame current
An integrated current sensor comprising a Z axis gradiometer and a lead frame primary coil, wherein the Z-axis gradiometer is a magnetoresistive Z-axis gradient sensor, comprising a substrate, with two elongated soft magnetic flux concentrators placed upon the substrate. The soft ferromagnetic flux concentrators are located above or below but displaced from a long-axis centerline equidistant from the magnetoresistive sensor strings, such that the combined magnetoresistive sensing unit detects the magnetic field perpendicular to the long-axis center line, and it is configured as a gradiometer sensor bridge. The lead frame serves as the primary coil, and the Z-axis gradiometer is placed above or below a cross-section of the current carrying portion of the lead frame, such that the current detection direction is parallel to the long-axis centerline. This sensor can detect currents of up to 5 to 50 A, it has low power consumption, small size, and fully integrated.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 15/12 - Circuits pour appareils de test à usage multiple, p.ex. pour mesurer, au choix, tension, courant ou impédance
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A single-package high-field magnetoresistive angle sensor, comprising at least one push-pull magnetoresistive bridge and soft magnetic flux attenuators located on the push-pull magnetoresistive bridge. The push-pull magnetoresistive bridge comprises a plurality of magnetoresistive sensor units. The magnetoresistive sensor units are of an MTJ or GMR type. Each magnetoresistive sensor unit comprises at least one pinned layer, one ferromagnetic reference layer, a nonmagnetic spacer layer, and a ferromagnetic free layer. The ferromagnetic free layer is a low aspect ratio oval or circle, which can make the intensity of magnetization of the ferromagnetic free layer align along an external magnetic field in any direction. The soft magnetic flux attenuator covers the surface of all the magnetoresistive sensor units to attenuate the high intensity external magnetic field to be within a measurable range of the magnetoresistive sensor units; the push-pull magnetoresistive bridge has antiparallel or mutually-orthogonal magnetization directions of the reference layer. The magnetoresistive angle sensor can measure the rotation angle of a high-intensity magnetic field. It has the advantages of low power consumption and small size.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/10 - Tracé par points de la répartition de champ
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 31/28 - Test de circuits électroniques, p.ex. à l'aide d'un traceur de signaux
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
37.
Single chip Z-axis linear magnetoresistive sensor with calibration/initialization coil
A single chip Z-axis linear magnetoresistive sensor with a calibration/initialization coil comprises a single chip Z-axis linear magnetoresistive sensor, and a calibration coil and/or an initialization coil. The calibration coil and the initialization coil are planar coils or three-dimensional coils. The planar coils are located above a substrate and below a magnetoresistive sensing unit, between a magnetoresistive sensing unit and a soft ferromagnetic flux concentrator, above a soft ferromagnetic flux concentrator, or in a gap of the soft ferromagnetic flux concentrator. The three-dimensional coil is wound around the soft ferromagnetic flux concentrator and the magnetoresistive sensing unit. The calibration coil and the initialization coil respectively comprise straight wires which are parallel to a magnetization direction of a pinned layer/free layer, wherein the calibration coil generates an equivalent calibration magnetic field parallel/anti-parallel to the direction of the pinned layer of a push or a pull magnetoresistive unit string, and the initialization coil generates a uniform initializing magnetic field in the direction of the free layer at all magnetoresistive sensing units. By controlling the current in the calibration coil/initialization coil, calibration and magnetic state initialization of the single chip Z-axis linear magnetoresistive sensor can be achieved. The sensor has advantages of being highly efficient, quick, and convenient.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
38.
Direct-read meter capable of eliminating magnetic interference of adjacent rotating wheels
raw}, thus eliminating the interfering magnetic field and permitting calculation of the rotation angle of the rotating wheel permanent magnets. This direct-read meter has the advantages of simple calculation, high precision, and elimination of the need for magnetic shielding.
G01F 25/00 - Test ou étalonnage des appareils pour la mesure du volume, du débit volumétrique ou du niveau des liquides, ou des appareils pour compter par volume
G01F 15/00 - MESURE DES VOLUMES, DES DÉBITS VOLUMÉTRIQUES, DES DÉBITS MASSIQUES OU DU NIVEAU DES LIQUIDES; COMPTAGE VOLUMÉTRIQUE - Détails des appareils des groupes ou accessoires pour ces derniers, dans la mesure où de tels accessoires ou détails ne sont pas adaptés à ces types particuliers d'appareils, p.ex. pour l'indication à distance
G01F 15/06 - Dispositifs d'indication ou d'enregistrement
G01F 1/58 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets électriques ou magnétiques par débitmètres électromagnétiques
This invention discloses a type of noncontact linear potentiometer; the potentiometer comprises a slider, a rotating shaft, a guide rod, a tunneling magnetoresistive sensor, a permanent magnet, a printed circuit board, and two support structures. In this configuration the slider moves along the guide rod and the rotating shaft, causing the rotation of the rotating shaft; the permanent magnet is attached to an end of the rotating shaft, and it therefore rotates as the shaft rotates. A tunneling magnetoresistive sensor is located adjacent to the permanent magnet, soldered onto a printed circuit board, and it is used to measure the angle of rotation of the permanent magnet. The guide rod constrains the sliding direction of the slider, and the two support structures are located at the opposite ends of the guide rod and rotating shaft, and they are used to support the rotating shaft and guide rod. Located between the slider and rotating shaft is a ball bearing, a pin and a leaf spring assembly. This potentiometer has several advantages, including a compact structure, easy fabrication, long service life, in addition to providing smooth slider motion that provides a pleasing user experience.
A copper thermal resistance thin-film temperature sensor chip comprises a substrate, a temperature sensor, and two electrode plates, the temperature sensor which has a plurality of electrically connected resistance elements is placed on the substrate, a portion of the resistance elements form a resistance adjustment circuit. Integrated circuit elements are deposited by thin-film technology. It consists seed layer, copper thermal resistance thin-film layer above the seed layer and passivation layer above the copper thermal resistance thin-film layer. Through semiconductor manufacturing and processing technology, the thermistor layer of this structure is to be fabricated into a serious of thermistor wires and then to form the temperature sensor, furthermore this temperature sensor has a resistance adjustment circuit which is used to adjust resistance value precisely. The preparation method of the sensor chip comprises depositing thin-film on the surface of the substrate, and then a final sensor chip can be obtained through the processing of magnetron sputtering, schematize, peeling, and etching. This sensor chip has the advantages of high impedance, excellent thermal stability, good linearity and low cost.
G01K 7/00 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur
G01K 7/18 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance linéaire, p.ex. un thermomètre à résistance de platine
G01K 1/12 - Dispositifs de protection, p.ex. étuis pour prévenir les dommages dus aux surcharges thermiques
An automatic magnetic flow recording device, comprises a multitude of coaxially disposed hard magnetic rotating wheels wherein the hard magnetic rotating wheels are circular, and rotate with respect to each other by a predetermined transmission ratio. Each hard magnetic rotating wheel has at least one corresponding biaxial magnetoresistive angle sensor. The biaxial magnetoresistive angle sensors measure the angular positions of the hard magnetic rotating wheels within the range of 0-360 degrees. The biaxial magnetoresistive angle sensors comprise two single-axis linear magnetoresistive sensors, wherein the single-axis linear magnetoresistive sensors are an X-axis magnetoresistive sensor or a Z-axis magnetoresistive sensor. The X-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component parallel to the tangent of the circumference of the hard magnetic rotating wheel. The Z-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component along the radial direction of the hard magnetic rotating wheel. This flow meter recording device has several advantages compared to electronic flow meters with X, Y biaxial angle sensor. These include flexibility of the mounting position, small adjacent hard magnetic rotating wheel interference, and low power consumption.
G11C 11/02 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01F 15/06 - Dispositifs d'indication ou d'enregistrement
42.
Magnetoresistive angle sensor and corresponding strong magnetic field error correction and calibration methods
A biaxial magnetoresistive angle sensor with a corresponding calibration method for magnetic field error correction, comprising two single-axis magnetoresistive angle sensors for detecting an external magnetic field in an X-axis direction and a Y-axis direction that are perpendicular to each other, a unit for calculating a vector magnitude of the voltage outputs of the single-axis magnetoresistive angle sensors along the X axis and the Y axis in real time, a unit for calculating a difference between a known calibration vector magnitude and the measured vector magnitude, a unit for dividing the difference by the square root of 2 in order to calculate an error signal, a unit for adding the error signal to the X-axis output and the Y-axis output respectively or subtracting the error signal from the X-axis output and the Y-axis output in order to calculate the calibrated output signals of the X-axis and the Y-axis angle sensors, a unit for calculating an arc tangent of a factor obtained by dividing the calibrated Y-axis output signal by the calibrated X-axis output signal to provide a rotation angle of the external magnetic field. This method for applying the magnetic field error calibration to the biaxial magnetoresistive angle sensor reduces the measurement error and expands the magnetic field application range in addition to improving the measurement precision in a high magnetic field.
G01D 18/00 - Test ou étalonnage des appareils ou des dispositions prévus dans les groupes
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01D 5/165 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance par mouvement relatif d'un point de contact et d'une piste résistante
A magnetoresistive audio pickup comprises an audio detection circuit. The audio detection circuit comprises at least one linear magnetoresistive sensor, a coupling capacitance, an AC amplifier, and a signal processing circuit comprising an additional amplifier. The linear magnetoresistive sensor comprises at least one single-axis linear magnetoresistive sensor unit. The linear magnetoresistive sensors are placed in a measurement plane above a speaker's voice coil, the signal output end of each single-axis linear magnetoresistive sensor unit is capacitively coupled to the AC amplifier which provides AC signals through electrical connection to the amplifier, these signals are combined within the signal processing unit into an audio signal, and the audio signal is output from the circuit; each single-axis linear sensor unit is located in the linear response area of the measurement plane. The present invention detects a speaker's audio signals via magnetic field coupling between a speaker and a linear magnetoresistive sensor. The magnetoresistive audio pickup's structure is simple and it also provides low power consumption.
H04R 23/00 - Transducteurs autres que ceux compris dans les groupes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H04B 5/00 - Systèmes de transmission à induction directe, p.ex. du type à boucle inductive
A magnetoresistive magnetic imaging sensor for identifying a magnetic image comprises a PCB and several magnetoresistive sensor chips, wherein the several magnetoresistive sensor chips are located on the PCB, and the PCB is perpendicular or parallel to the magnetic image detection surface. It has a lateral detection mode and front detection mode. In the lateral detection mode, each side face of the several magnetoresistive sensor chips is parallel or coplanar with the side of the PCB, and parallel to the magnetic image detection surface. The several magnetoresistive sensor chips have the same magnetic sensing direction. In the lateral detection mode, the adjacent magnetoresistive sensor chips are stacked, while in the front detection mode, the adjacent magnetoresistive sensor chips are arranged in a staggered manner, in order to achieve continuity of the detection area in the magnetic image detection surface. The magnetoresistive magnetic imaging sensor may also comprise a permanent magnet assembly and a housing. The sensor has several advantages, including continuity across the detection area, good signal reproduction, high sensitivity, and low power consumption.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G07D 7/04 - Test des propriétés magnétiques des matériaux de ces papiers, p.ex. par détection d’empreinte magnétique
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A dual Z-axis magnetoresistive angle sensor comprising a circular permanent magnet encoding disc, two Z-axis magnetoresistive sensor chips, and a PCB, two Z-axis magnetoresistive sensors are placed on the PCB. The magnetic sensing directions of the Z-axis magnetoresistive sensors are orthogonal to the substrate. Each Z-axis magnetoresistive sensor chip comprises a substrate and at least one magnetoresistive sensor located on the substrate. The magnetic field sensitive direction of the magnetoresistive sensor is perpendicular to the substrate. The magnetoresistive sensor comprises a flux concentrator and a magnetoresistive sensor unit. The magnetoresistive sensor unit is connected electrically into a push-pull structure. The push arm and pull arm of the magnetoresistive sensor are respectively located at two side positions equidistant from Y-axis central line and above or below the flux concentrator. The circular permanent magnet encoding disc has a magnetization direction parallel to the diameter direction. When the circular permanent encoding disc rotates, a magnetic field measurement angle is calculated via orthogonal magnetic fields measured by the two z-axis magnetoresistive sensor chip. The magnetic field measurement angle can be used for representing a rotation angle of the circular permanent magnetic encoding disc. This dual Z-axis magnetoresistive angle sensor's structure is simple, and it also has the characteristics of high sensitivity and high spatial flexibility.
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
46.
Single-chip off-axis magnetoresistive Z-X angle sensor and measuring instrument
A single-chip off-axis magnetoresistive Z-X angle sensor and measuring instrument. The single-chip off-axis magnetoresistive Z-X angle sensor comprises a substrate located on an X-Y plane, at least one X-axis magnetoresistive sensor and at least one Z-axis magnetoresistive sensor, the X-axis magnetoresistive sensor and the Z-axis magnetoresistive sensor being located on the substrate. The X-axis magnetoresistive sensor and the Z-axis magnetoresistive sensor each comprise magnetoresistive sensing units and a flux concentrator, the magnetoresistive sensing units being electrically connected into a magnetoresistive bridge comprising at least two bridge arms. The Z-axis magnetoresistive sensor is a push-pull bridge structure, a push arm and a pull arm of the push-pull bridge structure being respectively located at positions equidistant from a Y-axis central line of the flux concentrator. The X-axis magnetoresistive sensor is a reference bridge structure, a reference arm and a sensitive arm of the reference bridge structure being respectively located on the Y-axis central line of the flux concentrator and a position more than half of the width of the flux concentrator away from the Y-axis central line. The single-chip off-axis magnetoresistive Z-X angle sensor is placed at an edge of a circular permanent magnet encoding disc and forms an angle measuring instrument. Angle measurement is achieved by measuring X-axis and Z-axis magnetic field components, the structure is compact and sensitivity is high.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
This invention discloses a TMR near-field magnetic communication system, which is used for detecting AC and DC magnetic fields generated by a near-field magnetic communication system, and inputting AC and DC magnetic field signal to an audio electroacoustic taking the same as input signals thereof. The audio electroacoustic device comprises a hearing aid, an earphone of a home entertainment system, a public hearing loop system with an embedded hearing device, etc. The TMR near-field magnetic communication system comprises one or more TMR sensor bridges for detecting AC and DC magnetic field signals, an analog-signal circuit containing a filter which is used for separating components of AC and DC signals output by a TMR sensor, an amplifier which is used for amplifying an AC electrical signal, and an analog output used for transmitting the AC electrical signal to the audio electroacoustic device. The TMR sensor can be a linear or nonlinear TMR sensor, and the TMR sensor is designed to have an optimal signal to noise ratio in a specific DC magnetic field.
H04W 4/80 - Services utilisant la communication de courte portée, p.ex. la communication en champ proche, l'identification par radiofréquence ou la communication à faible consommation d’énergie
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
48.
Single-chip differential free layer push-pull magnetic field sensor bridge and preparation method
Provided are a single-chip differential free layer push-pull magnetic field sensor bridge and preparation method, the magnetic field sensor bridge comprising: a substrate, a staggered soft magnetic flux concentrator array, and a GMR spin valve or a TMR magnetoresistance sensing unit array having a magnetic sensing axis in an X-direction on the substrate. A soft magnetic flux concentrator comprises sides parallel to an X-axis and a Y-axis, and four corners sequentially labeled as A, B, C and D clockwise from an upper left position. Magnetoresistive sensing units are located at gaps between the soft magnetic flux concentrators. Additionally, the magnetoresistive sensing units corresponding to the A and C corner positions and B and D corner positions of the soft flux concentrators are defined as push magnetoresistive sensing units and pull magnetoresistive sensing units, respectively. The push magnetoresistive sensing units are electrically interconnected into one or more push arms, and the pull magnetoresistive sensing units are electrically interconnected into one or more pull arms. The push arms and the pull arms are electrically interconnected to form a push-pull sensor bridge. The present invention has low power consumption, high magnetic field sensitivity, and can measure a magnetic field in the Y-direction.
G01R 3/00 - Appareils ou procédés spécialement adaptés à la fabrication des appareils de mesure
G01R 17/00 - Dispositions pour procéder aux mesures impliquant une comparaison avec une valeur de référence, p.ex. pont
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetoresistive Z-axis gradient sensor chip, which is used to detect the gradient in the XY plane of a Z-axis magnetic field component generated by a magnetic medium; the sensor chip comprises a Si substrate, a collection of two or two groups of flux guide devices separated a distance Lg and an arrangement of electrically interconnected magnetoresistive sensor units. The magnetoresistive sensor units are located on the Si substrate and located above or below the edge of the flux guide devices as well; the flux guide devices convert the component of the Z-axis magnetic field into the direction parallel to the surface of the Si substrate along the sensing axis direction of the magnetoresistive sensing units. The magnetoresistive sensor units are electrically interconnected into a half bridge or a full bridge gradiometer arrangement, wherein the opposite bridge arms are separated by distance Lg. This sensor chip can be utilized with a PCB or in combination with a PCB plus back-bias magnet with casing. The sensor measures the Z-axis magnetic field gradient by using magnetoresistive sensors with in-plane sensing axes. This sensor chip has several advantages relative to a Hall Effect sensor device, including smaller size, lower power consumption, and higher magnetic field sensitivity.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
50.
Magnetic anti-counterfeit label and identification system thereof
A magnetic anti-counterfeit label and identification system thereof, wherein the magnetic anti-counterfeit label comprises a substrate, a magnetic ink layer, an opaque layer and a protective coating. The magnetic ink layer covers the substrate. The opaque layer covers the magnetic ink layer in order to visually hide the characters, bar code, and other patterns which are printed using magnetic ink. Additionally the protective coating is composed of a polymer or a metal layer, which covers opaque layer. This identification system comprises a magnetic sensor for sensing the magnitude of the magnetic field emitted by the magnetic anti-counterfeit label, a permanent magnet or an electromagnet for magnetizing the magnetic anti-counterfeit label, a digital processing circuit that is electrically connected to the magnetic sensor, and a frame that is used to hold the magnetic sensor and the digital processing circuit. The digital processing circuit outputs a code corresponding to the magnetic anti-counterfeit label.
G06K 7/08 - Méthodes ou dispositions pour la lecture de supports d'enregistrement avec des moyens de perception des modifications d'un champ électrostatique ou magnétique, p.ex. par perception des modifications de la capacité entre des électrodes
G06K 19/06 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p.ex. forme, nature, code
A coin detection system comprises an excitation coil, a radial magnetic gradiometer, an axial magnetic gradiometer, a signal excitation source, a drive circuit, an analog front-end circuit and a processor. After the excitation coil is excited by the signal excitation source and the drive circuit, the excitation coil generates an excitation magnetic field parallel to the axial direction of a coin, and under the influence of the excitation magnetic field, the coin generates an induced magnetic field through eddy currents induced in the coin; the radial magnetic gradiometer and the axial magnetic gradiometer detect the magnetic field components of the magnetic field in the radial direction and the axial direction of the coin, and the detected signal is transmitted to the analog front-end circuit for amplification; the processor processes and then outputs the amplified signal transmitted by the analog front-end circuit, and the material, design, denomination, etc. of the coin are obtained according to the amplitude, phase, and other information contained in the output signal.
Disclosed is a low fly height in-plane magnetic image sensor chip. This sensor chip comprises a silicon (Si) substrate with a pit on the surface, a magnetoresistive sensor, and an insulating layer. The magnetoresistive sensor is located on the bottom surface of the pit in the Si substrate. The insulating layer is located above the magnetoresistive sensor. The magnetic image surface detected during operation is coplanar or parallel with the surface of the Si substrate surface. The input and output ends of the magnetoresistive sensor are connected with leads directly, or bonded with leads through pads, or through a conducting post and pads to form connections. And the flying height of the leads is lower than the height of the surface of the Si substrate. This technical solution has several advantages, such as compact structure, high output signal, and direct contact with the magnetic image.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G07D 7/04 - Test des propriétés magnétiques des matériaux de ces papiers, p.ex. par détection d’empreinte magnétique
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
53.
Monolithic three-axis magnetic field sensor and its manufacturing method
A monolithic three-axis magnetic field sensor comprises an X-axis sensor, a Y-axis sensor and a Z-axis sensor integrated into the same substrate. The X-axis sensor and the Y-axis are both referenced bridge structures. The magnetoresistive sensing elements of the reference arm are beneath the corresponding magnetic flux guides, and the magnetoresistive sensing elements are in the gaps between the corresponding magnetic flux guides. The magnetoresistive elements of these two sensors are aligned perpendicular to each other, and the magnetization directions of the pinned layer of these magnetoresistive elements are perpendicular to each other as well. The Z-axis sensor is a push-pull bridge structure. The push arms and pull arms of the magnetoresistive sensors are respectively aligned above or beneath the edges of the magnetic flux guides. The manufacturing method for this monolithic three-axis magnetic field sensor is also disclosed.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
54.
Monolithic three-axis linear magnetic sensor and manufacturing method thereof
A monolithic three-axis linear magnetic sensor and manufacturing method wherein the sensor comprises an X-axis sensor, a Y-axis sensor and a Z-axis sensor. The X-axis sensor comprises a referenced bridge and at least two X ferromagnetic flux guides. The Y-axis sensor comprises a push-pull bridge and at least two Y ferromagnetic flux guides. The Z-axis sensor comprises a push-pull bridge and at least one Z ferromagnetic flux guide. The bridge arms of the referenced bridge and push-pull bridge are each formed by one or more magnetoresistive elements that are electrically interconnected. The directions of the sensing axes and the directions of magnetization of the pinned layers of the magnetoresistive elements are all oriented along the X-axis. This manufacturing method comprises first depositing a magnetoresistive thin film on a wafer, and then performing several processes such as magnetic annealing, photolithography, etching, coating, and the like in order to realize a sensor. This monolithic three-axis linear magnetic sensor has the advantages of low cost, easy manufacturability, good linearity, and high sensitivity.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01L 49/02 - Dispositifs à film mince ou à film épais
55.
Sensor chip used for multi-physical quantity measurement and preparation method thereof
A sensor chip is used for multi-physical quantity measurement. This sensor chip comprises a substrate and at least two of the following sensors: a temperature sensor, a humidity sensor, or a pressure sensor, which are integrated onto the same substrate, wherein the pressure sensor consists of electrically interconnected resistive elements. The humidity sensor is an interdigitated structure. Thermistor elements are placed around the pressure sensor and the humidity sensor to form a temperature sensor. The temperature sensor has a resistance adjusting circuit. A microcavity is etched on the back of the substrate in a place on the opposite side pressure sensor's location. Also disclosed is a preparation method for a sensor chip used for multi-physical quantity measurement. This multi-physical quantity measurement single chip sensor chip has the advantages of low cost, low power consumption, easy fabrication, and wide applicability.
G01D 21/02 - Mesure de plusieurs variables par des moyens non couverts par une seule autre sous-classe
G01N 27/22 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la capacité
G01K 7/22 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance non linéaire, p.ex. une thermistance
G01L 9/04 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pression; Transmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent en faisant usage des variations de la résistance ohmique, p.ex. de potentiomètre de jauges de contrainte à résistance
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
56.
Precision syringe pump and manufacturing method thereof
A precision syringe pump employing a syringe comprises a motor, a lead screw and a syringe driving head connected to the lead screw. The syringe comprises a cylinder and a plunger. The motor drives the lead screw to rotate clockwise or counterclockwise to drive the syringe driving head and push the plunger to move within the cylinder. The syringe pump further comprises: a magnetoresistive sensor, at least one permanent magnet and an MCU, the at least one permanent magnet being located on the lead screw and rotating therewith; the magnetoresistive sensor can sense the magnetic field generated by the at least one permanent magnet; the input end of the MCU is connected to the magnetoresistive sensor, and the output end of the MCU is connected to the motor; the MCU receives signals from the magnetoresistive sensor and controls, according to the signal feedback, the direction and velocity of the lead screw rotated by the motor. The precision syringe pump of the present invention is characterized by high sensitivity, high reliability, low power consumption and low cost, and is convenient to use.
A61M 5/145 - Perfusion sous pression, p.ex. utilisant des pompes utilisant des réservoirs sous pression, p.ex. au moyen de pistons
A61M 5/142 - Perfusion sous pression, p.ex. utilisant des pompes
A61M 5/168 - Moyens pour commander l'écoulement des agents vers le corps ou pour doser les agents à introduire dans le corps, p.ex. compteurs de goutte-à-goutte
A61M 5/172 - Moyens pour commander l'écoulement des agents vers le corps ou pour doser les agents à introduire dans le corps, p.ex. compteurs de goutte-à-goutte électriques ou électroniques
A direct-current fan control chip comprises a magnetoresistive sensor, a controller, a driver and a substrate. The magnetoresistive sensor, the controller and the driver are integrated on the substrate. The sensing direction of the magnetoresistive sensor is perpendicular to or parallel to the surface of the direct-current fan control chip. The magnetoresistive sensor provides the controller with a rotor position signal, a rotor speed signal, and rotor a rotation direction signal for the controller. The controller outputs a control signal to the driver according to the received signals. After receiving the control signals, the driver outputs a drive signal. This control chip has the advantages of good temperature stability, good frequency response and so on.
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
F04D 27/00 - Commande, p.ex. régulation, des pompes, des installations ou des systèmes de pompage spécialement adaptés aux fluides compressibles
F04D 25/06 - Ensembles comprenant des pompes et leurs moyens d'entraînement la pompe étant entraînée par l'électricité
G01P 3/487 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer la vitesse angulaire en mesurant la fréquence du courant ou de la tension engendrés de signaux ayant la forme d'impulsions délivrés par des aimants rotatifs
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
A mini lead screw pump monitors the rotation of a lead screw by using a magnetoresistive sensor and an MCU, and uses feedback to control the rotation direction and speed of the lead screw through a motor controller so as to control the speed of infusion to a patient. Furthermore, this mini lead screw pump can control the infusion speed of insulin according to the patient's blood sugar concentration monitored by CGM. This mini lead screw pump has several advantages, comprising high sensitivity, high reliability, low power consumption, low cost, and ease of use.
A61M 5/145 - Perfusion sous pression, p.ex. utilisant des pompes utilisant des réservoirs sous pression, p.ex. au moyen de pistons
A61M 5/168 - Moyens pour commander l'écoulement des agents vers le corps ou pour doser les agents à introduire dans le corps, p.ex. compteurs de goutte-à-goutte
A61M 5/172 - Moyens pour commander l'écoulement des agents vers le corps ou pour doser les agents à introduire dans le corps, p.ex. compteurs de goutte-à-goutte électriques ou électroniques
A low profile magnetoresistive imaging sensor array based on the principle of magnetic induction, which reduces a distance between a medium imaging sensor array and a medium by optimizing the arrangement of an application integrated circuit and a sensing element array and using an electric connection technology which can reduce the distance between the medium imaging sensor array and the medium, thereby increasing the resolution of the existing medium imaging sensor. The low profile magnetoresistive imaging sensor array includes a sensing element array and an application integrated circuit, and also includes a circuit which provides a power for the sensing element array, a magnetoresistive sensing element array selection circuit, a signal amplification circuit, a digitizer, a memory circuit, and a microprocessor. Additionally, the sensing element array includes at least one magnetoresistive sensing element.
G01R 31/02 - Essai des appareils, des lignes ou des composants électriques pour y déceler la présence de courts-circuits, de discontinuités, de fuites ou de connexions incorrectes de lignes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G06K 9/18 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales utilisant des caractères imprimés pourvus de marques de codage additionnelles ou comportant des marques de codage, p.ex. le caractère étant composé de barres distinctes de formes différentes, chacune représentant une valeur de code différente
A single chip referenced bridge type magnetic field sensor for high-intensity magnetic field, the sensor comprises a substrate, a reference arm, a sense arm, shielding structures and attenuators. Wherein the reference arms and the sense arms comprise at least two rows/columns of reference element strings and sense element strings which comprise one or more identical electrically interconnected magnetoresistive sense elements; the reference element strings and the sense element strings are mutually interleaved, each reference element string is designed with a shielding structure on top of it, and each sense element string is designed with an attenuator on top of it. The magnetoresistive sensor elements can be AMR, GMR or TMR sensor elements. The shielding structures and attenuators are arrays of long rectangular bars composed of a soft ferromagnetic material, such as permalloy. The sensor may be implemented in three different bridge structures, a quasi-bridge, a referenced half-bridge, and a referenced full-bridge. This sensor has several advantages including low power consumption, excellent linearity, and wide working range making it able to operate in high-intensity magnetic fields.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A high sensitivity push-pull bridge magnetic sensor, wherein the sensor comprises two substrates, magnetoresistive sense elements, push-arm flux concentrators, and pull-arm flux concentrators, wherein the magnetization directions of the pinning layers of the magnetoresistive sense elements on the same substrate are the same, but are opposite to the magnetization directions of the pinning layers of the magnetoresistive sense elements on the adjacent substrate, and the magnetoresistive sense elements on one substrate are electrically interconnected to form a push-arm of the bridge, and the magnetoresistive sense elements on the other substrate are electrically interconnected to form a pull-arm of the bridge. The magnetoresistive sense elements on the push-arm and pull-arm are aligned respectively in the gaps between two adjacent push-arm flux concentrators and two adjacent pull-arm flux concentrators. This sensor can be implemented as a quasi-bridge structure, a half-bridge structure, or a full-bridge structure. The sensor has the advantages of small offset, high sensitivity, excellent linearity, and low noise.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
Disclosed in the present invention is a low-power magnetoresistive switch sensor, comprising an internal reference voltage circuit, a multiplexer, a magnetoresistive bridge circuit, a comparison circuit, a voltage stabilization circuit, a digital control circuit, and a digital output circuit; one end of the internal reference voltage circuit is grounded while the other end of the internal reference voltage circuit is connected to the output end of the voltage stabilization circuit; the comparison circuit comprises one or more comparators, one end of the comparison circuit is electrically connected with the voltage stabilization circuit while the other end is grounded, the comparison circuit is provided with one or more input ends and one or more output ends, and the one or more output ends of the comparison circuit are electrically connected with one input ends of the digital control circuit; one end of the magnetoresistive bridge circuit is electrically connected with the output end of the voltage stabilization circuit while the other end is grounded, and the output end of the magnetoresistive bridge circuit is electrically connected with one input end of the comparison circuit. The low-power magnetoresistive switch sensor has the advantages of high sensitivity, low power consumption, high frequency response, small size, and excellent thermal characteristics.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H03K 17/95 - Commutateurs de proximité utilisant un détecteur magnétique
63.
Push-pull bridge-type magnetic sensor for high-intensity magnetic fields
The present invention provides a push-pull bridge-type magnetic sensor for high-intensity magnetic fields. The sensor comprises two substrates, magnetoresistive sensing elements, push arm attenuators, and pull arm attenuators. Magnetization directions of pinning layers of the magnetoresistive sensing elements located on a same substrate are parallel, and magnetization directions of pinning layers of the magnetoresistive sensing elements on different substrates are anti-parallel, wherein the magnetoresistive sensing elements on one substrate are electrically connected to one another to form push arms of a push-pull bridge, and the magnetoresistive sensing elements on the other substrate are electrically connected to one another to form pull arms of the push-pull bridge. The magnetoresistive sensing elements in the push arms and the pull arms are arranged in columns above or below the push arm attenuators and the pull arm attenuators. The sensor can be implemented in quasi-bridge, half-bridge, or full-bridge structures, and it has the following advantages: low power consumption, small offset, good linearity, wide operation range, the capability to operate in high-intensity magnetic fields, and twice the maximum sensitivity of a single-chip referenced bridge magnetic sensor.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A multiturn pulley liquid level sensor device for measuring a liquid level in a well and in a container, comprising a mechanical float which is fastened to a fastening rope and which can slide up and down. The fastening rope is installed on one or more pulleys, and as the float moves up and down, the pulley rotates back and forth. One pulley is mechanically coupled to one digital absolute magnetic rotation encoder device, and the encoder device is used for monitoring the total rotation angle of the pulley in real time. By way of using an algorithm, the total rotation angle of the pulley is converted into a distance from the bottom to calculate the height of a liquid level. A multiwheel encoder has two reading types, i.e., one is an electrical signal reading type, and the other is an optical signal reading type. The electronic output of said encoder may be used as input to an industrial control system, or be sent via communications link to a remote or the internet. The precision of the level measurement is determined by the number of encoder wheels. A mechanical gear or belt can adjust the total number of pulley turns corresponding to the full range of liquid level measurement.
G01F 23/46 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs en utilisant comme éléments de transmission des bandes ou des fils en utilisant des moyens d'indication actionnés magnétiquement
G01F 23/40 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs en utilisant comme éléments de transmission des bandes ou des fils
65.
Single-chip Z-axis linear magnetic resistance sensor
A single-chip Z-axis linear magnetoresistive sensor is provided. The sensor comprises a substrate, magnetoresistive sensing elements, and flux guides, wherein the magnetoresistive sensing elements are mutually electrically connected to form push arms and pull arms of a bridge; the push arms and the pull arms are alternately arranged, and the magnetoresistive sensing elements on the push arms and the pull arms are respectively located at two sides beneath the flux guides; the magnetization direction of a pinning layer of each magnetoresistive sensing element is the same and is in an X-axis direction. An external magnetic field in a Z-axis direction is converted into a magnetic field with components in an X-axis direction by the flux guides, and thus the magnetoresistive sensing elements beneath the flux guides can detect this component. The sensor has the advantages of the small size, simple manufacturing, simple packaging, high sensitivity, good linearity, wide operating range, low offset, good temperature compensation, and capability to measure high magnetic fields, etc.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
Disclosed are a magnetic bar code chip and a reading method thereof. The magnetic bar code chip comprises binary information bits formed by N rows and M columns of permanent magnet bars and/or null bits, and information identification bits that are peripheral to the binary information bits. The information identification bits are composed of permanent magnet bar identifiers and used for representing a position and a state of the magnetic bar code chip. The permanent magnet bars and the null bits represent 1 and 0 or 0 and 1 respectively. During reading, a strong magnetic field in a row direction of the binary information bits of the magnetic bar code chip is firstly used to set a magnetization direction of the permanent magnet bars, and then a magnetic bar code reader such as a multi-channel magnetic field gradient sensor, a magneto-optical microscope, a magnetic field monitor, a scanning magnetoresistivemicroscope and the like is used to convert magnetic field distribution information generated by the permanent magnet bars on the magnetic bar code chip into the binary information bits and information identification bits respectively, thus implementing reading on a reading result of the magnetic bar code chip. The present invention has characteristics of a small size and strong security.
G06K 19/00 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques
G06K 7/08 - Méthodes ou dispositions pour la lecture de supports d'enregistrement avec des moyens de perception des modifications d'un champ électrostatique ou magnétique, p.ex. par perception des modifications de la capacité entre des électrodes
G06K 19/06 - Supports d'enregistrement pour utilisation avec des machines et avec au moins une partie prévue pour supporter des marques numériques caractérisés par le genre de marque numérique, p.ex. forme, nature, code
67.
Single magnetoresistor TMR magnetic field sensor chip and magnetic currency detector head
A single magnetoresistor TMR magnetic field sensor chip and magnetic currency detector head; the single magnetoresistor TMR magnetic field sensor chip is installed above a magnetic excitation element; the sensing direction of the chip is parallel to the surface of the chip, and the direction of the magnetic excitation field generated at the chip by the magnetic excitation element is perpendicular to the surface of the chip; the chip comprises a substrate, a magnetic biasing structure deposited on the substrate, a magnetoresistive element, and an input/output terminal; the magnetoresistive element consists of MTJs; the sensing directions of the magnetoresistive element and the MTJs are the same as the sensing direction of the chip; and the direction of a bias magnetic field generated on the chip by the magnetic biasing structure is perpendicular to the sensing direction of the chip. The chip features high sensitivity, high signal-to-noise ratio, small size, high temperature stability and high reliability.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G07D 7/04 - Test des propriétés magnétiques des matériaux de ces papiers, p.ex. par détection d’empreinte magnétique
68.
Single chip push-pull bridge-type magnetic field sensor
A single chip push-pull bridge-type magnetic field sensor. The sensor comprises a substrate, bonding pads, magnetoresistance sensing elements, and flux concentrators, wherein the magnetoresistance sensing elements are positioned in the clearances of the adjacent flux concentrators, and the directions of the pinning layers of the magnetoresistance sensing elements are identical. The flux concentrators are divided into a push arm type and a pull arm type, the included angle between one type and an X-axis forward direction is positive, and the included angle between the other type and the X-axis forward direction is negative. The working principle of the sensor is that the magnetic field along the X-axis direction in the clearances of the flux concentrators are oppositely oriented. The sensor has the advantages of small size, low cost, simplicity in manufacturing, high sensitivity, good linearity, high sensitivity, wide working dynamic range, and the like.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetoresistive mixer, comprising a spiral coil, a bridge-type magnetoresistive sensor and a magnetic shielding layer, wherein the spiral coil is located between the bridge-type magnetoresistive sensor and the magnetic shielding layer. Four tunnel magnetoresistive sensor units forming the bridge-type magnetoresistive sensor respectively contain N array-type magnetic tunnel junction rows. The magnetic tunnel junction rows are connected in series, parallel, or combination of series and parallel connections to form two port structures. The four tunnel magnetoresistive sensor units are respectively located in two regions of the spiral coil having opposite current directions, sensing axes of magnetic tunnel junctions are perpendicular to the current directions, and in addition, the distribution characteristics of magnetic fields in directions of the sensing axes of the tunnel magnetoresistive sensor units to the magnetic field in the two regions are opposite, and the distribution characteristics in a single region are the same. The first frequency signal is input through the two ends of the spiral coil, the second frequency signal is input between the power and -ground ports of the bridge-type magnetoresistive sensor, and mixing signals are output through a signal output end of the bridge-type magnetoresistive sensor. The magnetoresistive mixer has the characteristics of good linearity, good input signal isolation, and low power consumption.
H03D 7/00 - Transfert de modulation d'une porteuse à une autre, p.ex. changement de fréquence
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetoresistive current limiter, comprising a substrate, a magnetoresistive sensor layer, a first insulating layer, a coil, a second insulating layer, a magnetic shield layer, and an input electrode and output electrode. The coil is located between the magnetic shield layer and the magnetoresistive sensor layer. The first and second insulating layers are isolated from the magnetoresistive sensor layer and the coil, and from the coil and the magnetic shield layer, respectively; the magnetoresistive sensor layer and the coil are connected in series, and are connected to the input electrode and the output electrode. The magnetoresistive sensor layer comprises N rows of array-type magnetic tunnel junction lines; the coil comprises 2*N+M (N>1, M=−1 or 3) conductive lines in series or N+M (N>1, M=0 or 2) conductive lines in parallel; current flows in the same direction into the conductive lines located above or below the tunnel junction lines and produces, at the magnetic tunnel junction lines, a uniform magnetic field. The magnetic tunnel junction of the magnetically sensitive axis is perpendicular to the magnetic tunnel junction lines, and the magnetoresistive sensor layer has the feature of a monotonic or axisymmetric linear rise in resistance to the magnetic field. The magnetoresistive current limiter has the features of rapid response, continuous operation, and ability to increase or decrease current.
H01L 43/00 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01C 7/13 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant sensibles au courant
H01L 43/08 - Résistances commandées par un champ magnétique
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H02H 9/02 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de courant
A liquid level sensor system is disclosed for remotely monitoring the liquid level in a tank. The system comprises a first fixed portion with a first liquid level response unit, and a second fixed portion with a second liquid level response unit. A guide tube is inserted into the tank and attached to the bottom of the first fixed portion. The guide tube is provided with a multitude of ports, such that the liquid level in the guide tube is flush with the liquid level in the tank. The first liquid level response unit comprises a float floating up and down with the variation of the liquid level in the guide tube, a rotating shaft rotating around a relatively fixed axis of rotation in the up and down floating process of the float, and a permanent magnet. The second fixed portion is attached to the top of the first fixed portion. The second liquid level response unit comprises a PCB, a magnetoresistive angle sensor chip, and a control circuit electrically connected to the magnetoresistive angle sensor chip. The magnetoresistive angle sensor chip outputs an analog voltage signal to the control circuit according to the rotation angle of the permanent magnet, and the control circuit calculates the height of the liquid level according to the analog voltage signal.
G01F 23/54 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs en utilisant comme éléments de transmission des tiges filetées en utilisant des moyens d'indication actionnés magnétiquement
G01F 23/38 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs en utilisant des bras tournants ou d'autres éléments de transmission pivotants en utilisant des moyens d'indication actionnés magnétiquement
A three-axis digital compass comprising two X-axis magnetic sensors, two Y-axis magnetic sensors, a flux concentrator, a signal sampling unit, a signal processing unit, and a signal output unit is disclosed. The X-axis and Y-axis magnetic sensors are arranged along a periphery of the flux concentrator. An external magnetic field is distorted when passing through the flux concentrator. An Z axis component of the external magnetic field is converted into X-axis or Y-axis magnetic field components when passing through the flux concentrator, and the so converted components of the external magnetic field act on the X-axis and Y-axis magnetic sensitive sensors. An output signal of the X-axis and Y-axis magnetic sensitive sensors is sent to the signal processing unit through the signal sampling unit, and it is used to calculate the three orthogonal components of the external magnetic field. These calculated external magnetic field components are output in a digital format through the signal output unit. The three-axis digital compass has a novel structure and an elegant computation algorithm. The design is compatible with AMR, GMR, TMR or other magnetoresistive sensor technology.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A single-chip magnetic field sensor bridge, comprising a substrate, a reference arm, a sensing arm, shielding structures, and wire bond pads is disclosed. The reference arm and the sense arm respectively comprise at least two rows/columns of reference element strings and sense element strings formed by electrically connecting one or more identical magnetoresistive sensing elements. The reference element strings and the sense element strings are alternately arranged. The magnetoresistive sensing elements are AMR, GMR or TMR sensing elements. The reference element strings are provided with shielding structures thereon, and the sensing element strings are located in gaps between two adjacent shielding structures. The shielding structures are arrays of elongated strips composed of permalloy or another soft ferromagnetic material. The sensors can be implemented as one of three different bridge structures, called a quasi-bridge, a half-bridge, or a full-bridge. This single-chip magnetic field sensor bridge has the advantages of small size, low cost, high sensitivity, small offset, good linearity, and good temperature stability.
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 17/10 - Ponts de mesure alternatifs ou continus
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
An electronic water meter capable of implementing precision metering. The electronic water meter comprises a machine frame, multiple counter units, and multiple shielding plates. The counter units comprise numerical character wheels, magnets, magnetic angular displacement sensors, and digital circuits. The magnetic angular displacement sensors are electrically connected to the digital circuits, sense components of magnetic fields at respective positions thereof on the basis of angular position changes of magnetic field vectors of the counter units, and transmit a corresponding electric signal to the digital circuits. The digital circuits perform a calculation processing on the basis of the electrical signal outputted by the magnetic angular displacement sensors and output a digital signal corresponding to the angular positions of the numerical character wheels. The shielding plates are arranged on two sides of the counter units and are used for isolation among the multiple counter units and between the multiple counter units and the external. The electronic water meter has the advantages of a compact size, easy installation, high metering precision, and powerful anti-interference capability.
G01F 15/06 - Dispositifs d'indication ou d'enregistrement
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01F 15/075 - Intégration pour obtenir le débit total, p.ex. en utilisant un mécanisme intégrateur actionné mécaniquement en utilisant des moyens d'intégration actionnés électriquement
75.
Single-chip bridge-type magnetic field sensor and preparation method thereof
The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p.ex. calcul quantique ou logique à un électron
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01L 43/08 - Résistances commandées par un champ magnétique
The present invention relates to a non-contact potentiometer. The non-contact potentiometer comprises the following parts: a mechanical housing with through-holes; a rotating shaft comprising a top end and a magnet end on which a permanent magnet is fixed and external torque can be applied to the top end, thus driving the rotating shaft and the permanent magnet to rotate around a rotation axis and relative to the housing; a magnetoresistive sensor assembly fixed inside the housing, comprising one or more sensor chips, the sensitivity axis of the sensor chips lies in a sensing plane that is perpendicular to the axis of the rotating shaft, and separated from the permanent magnet by a predetermined distance in the direction parallel to the axis of the rotating shaft, said sensors are used for sensing the magnetic variation produced as the permanent magnet rotates with the rotating shaft thereby generating sensing signals; and three electrical connection terminals, namely a ground terminal, a power terminal, and a signal output terminal. This non-contact potentiometer has the advantages of high precision, low power consumption, and low cost. Additionally, it converts the complex analog signal from the magnetic sensor into a standard digital format that is easy to use.
G01B 7/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G01C 9/00 - Mesure de l'inclinaison, p.ex. par clinomètres, par niveaux
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
Push-pull half-bridge magnetoresistive switch, comprising two magnetic sensor chips, each magnetic sensor chip having a magnetic induction resistor and a magnetic induction resistor electrical connection pad. The two magnetic sensor chips are electrically interconnected and have opposite and parallel directions of induction, thus forming the push-pull half-bridge circuit. The magnetic induction resistor comprises one or a plurality of magnetoresistive elements connected in series. The magnetic induction resistor pads are located at adjacent edges of the magnetic sensor chips, and each pad may accommodate the welding of at least two bonding wires. The magnetoresistive switch may improve the sensitivity of a sensor, and decrease output voltage deviation and output voltage temperature drift, which is beneficial for decreasing the volume and increasing the performance of the switch sensor.
H03B 1/00 - PRODUCTION D'OSCILLATIONS, DIRECTEMENT OU PAR CHANGEMENT DE FRÉQUENCE, À L'AIDE DE CIRCUITS UTILISANT DES ÉLÉMENTS ACTIFS QUI FONCTIONNENT D'UNE MANIÈRE NON COMMUTATIVE; PRODUCTION DE BRUIT PAR DE TELS CIRCUITS - Détails
H03K 3/00 - Circuits pour produire des impulsions électriques; Circuits monostables, bistables ou multistables
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H03K 17/97 - Commutateurs actionnés par le déplacement d'un élément incorporé dans ce commutateur utilisant un élément mobile magnétique
H03K 17/95 - Commutateurs de proximité utilisant un détecteur magnétique
A multi-turn absolute magnetic encoder, comprising (M+1) counting units, a single-turn signal processing unit, and a multi-turn signal processing unit. Each counting unit comprises counting wheels with a cylindrical ring permanent magnet fixed thereon, and a tunneling magnetoresistive angular displacement sensor. The magnetoresistive angular displacement sensor is located within a region in a detection plane of the permanent magnet at within a specific radius range from the axis of the cylindrical ring permanent magnet, within the detection plane the angle of a component of a magnetic field generated by the permanent magnet is linearly proportional to the rotation angle of the cylindrical ring permanent magnet. The single-turn signal processing unit calculates and outputs a code characterizing the absolute angular position of the input shaft based on the sensor signal of the first counting unit; and the multi-turn signal processing unit calculates and outputs the integer number of turns of the input shaft based on the sensor signals of the second counting unit to (M+1) counting units.
G01B 7/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G01D 5/249 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions utilisant des impulsions codées
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
Provided is a magnetic absolute rotary encoder, comprising a rotation shaft, multiple rotating wheels that can rotate along the rotation shaft, multiple encoding units that correspond to the multiple rotating wheels one-to-one, and one or more permanent magnet assemblies that provide the magnetic bias to the multiple encoding units. Each encoding unit comprises a magnetically permeable encoder disc, the structure thereof enabling the magnetic permeability thereof to be different according to the different positions of the rotation shaft, and comprises multiple sensor units that comprise multiple magnetic sensors. The sensor units are used to sense the magnetic permeability of the magnetically permeable encoder disc and to output the sensor signals that characterize the relative position of the magnetically permeable encoder disc. According to the sensor signals of the sensor units, each encoding unit outputs the value that characterizes the selected rotation position of the corresponding rotation wheel, thereby enabling an absolute magnetic rotating encoder that is simple and low in cost and has more precise magnetic encoder discs.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/12 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01D 5/249 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions utilisant des impulsions codées
G01D 5/251 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques sélectionnant un ou plusieurs conducteurs ou circuits parmi un certain nombre de conducteurs ou circuits, p.ex. en fermant des contacts un conducteur ou circuit
G01F 15/06 - Dispositifs d'indication ou d'enregistrement
G01R 11/16 - Adaptations des compteurs aux compteurs d'électricité
80.
Thin-film magnetoresistance sensing element, combination thereof, and electronic device coupled to the combination
A thin film magnetoresistive sensor for detecting a magnetic field components perpendicular and parallel to the plane of the sensor substrate is disclosed. The sensing element comprises a free layer, a reference layer, and a spacer layer between the free layer and the reference layer. The easy-axis magnetization, which is inherent to the material of the free layer, is arranged to be perpendicular to the plane of the sensor substrate. The magnetization direction of the reference layer is confined to a direction parallel to the substrate plane. The reference layer consists of a ferromagnetic layer exchange coupled to an antiferromagnetic layer, or consists of a ferromagnetic layer having a higher coercive force than that of the free layer. The spacer layer is composed of an insulating material or a conductive material. The magnetoresistive sensor further includes an array of aforementioned sensing elements coupled to an electronic device in order to provide three-axis sensing.
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
H01L 43/08 - Résistances commandées par un champ magnétique
B82Y 25/00 - Nanomagnétisme, p.ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
A magnetic angle encoder comprising counting wheels, with columnar ring-shaped permanent magnets coaxially mounted to the counting wheels, tunneling magnetoresistive angular displacement sensors, and a digital processing circuit. In the magnetic angle encoder, the tunneling magnetoresistive angular displacement sensors are located in a region within detection planes of the permanent magnets with an axial distance and a specific radial distance from the permanent magnets. Within this specific radius range, the rotating magnetic field angle (Φ) of the component of the magnetic field generated by the permanent magnets in the detection planes varies linearly with the rotation phase angle (α) of the permanent magnets. An electronic water meter is also disclosed, and it comprises a plurality of counting units and a digital processing circuit. The counting units contain counting wheels, permanent magnets, and tunneling magnetoresistive angular displacement sensors. The digital processing circuit is connected to each tunneling magnetoresistive angular displacement sensor, and converts the output of the tunneling magnetoresistive angular displacement sensors into a digital code. The magnetic angle encoder and the electronic water meter have the advantages of small size and high measurement accuracy.
G01B 7/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01F 15/06 - Dispositifs d'indication ou d'enregistrement
G01D 5/245 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions utilisant un nombre variable d'impulsions dans un train
82.
Digital liquid-level sensor having at least one tunneling magnetoresistance switch
A digital liquid-level sensor comprises a non-magnetic conduit, a floater provided outside the non-magnetic conduit and capable of axially moving along the non-magnetic conduit, and a permanent magnet fixed on the floater. The non-magnetic conduit further comprises a switch unit and an encoding unit. The switch unit comprises at least one tunneling magnetoresistance switch which is turned on or turned off under the effect of the magnetic field produced by the permanent magnet; and the encoding unit comprises at least one encoder, of which an input end receives an on/off signal from the tunneling magnetoresistance switch and outputs a digital signal indicating the position of the floater. The digital liquid-level sensor is of a small size; has low cost, low power consumption, high reliability, high sensitivity, high solution, long service life, and a good anti-interference capability; and can directly output the digital signal.
G01F 23/62 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs en utilisant comme éléments de transmission des éléments fixés rigidement aux flotteurs et se déplaçant de manière rectiligne avec ces derniers en utilisant des moyens d'indication actionnés magnétiquement
G01F 23/74 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs du type à flotteur libre en utilisant des moyens d'indication actionnés magnétiquement pour détecter des changements de niveau seulement en des emplacements fixes et déterminés
G01F 23/72 - Indication ou mesure du niveau des liquides ou des matériaux solides fluents, p.ex. indication en fonction du volume ou indication au moyen d'un signal d'alarme par des flotteurs du type à flotteur libre en utilisant des moyens d'indication actionnés magnétiquement
83.
Permanent magnet suitable for magnetic angle encoder
The present invention relates to a permanent magnet suitable for a magnetic angle encoder. The permanent magnet has an annular cylindrical structure and comprises a first permanent magnet unit and a second permanent magnet unit. The first permanent magnet unit and the second permanent magnet unit are geometrically symmetrical with respect to a diametral cross section. The magnetization intensity of the first permanent magnet unit and the magnetization intensity of the second permanent magnet unit are parallel to the axial direction of the annular cylinder and are in opposite directions, or the magnetization intensity of the first permanent magnet unit and the magnetization intensity of the second permanent magnet unit are perpendicular to the diametral cross section and are parallel to one another and in the same direction.
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p.ex. de poudre
H01F 1/047 - Alliages caractérisés par leur composition
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p.ex. SmCo5
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
A magnetic currency verification head may include a magnetoresistive sensor chip, and a magnetic bias unit disposed on the side of the magnetoresistive sensor chip away from the detection surface of the magnetic currency verification head, and separated from the magnetoresistive sensor chip; the magnetoresistive sensor chip comprises a gradiometric bridge circuit that includes magnetic sensor elements; the sensitive direction of the magnetic sensor elements is parallel to the detection surface of the magnetic currency verification head; and the magnetic bias unit has a recessed magnetic structure configured such that the magnetic field generated by the magnetic bias unit only has a small magnetic field component in the direction parallel to the detection surface, thereby enabling the magnetic sensor elements to operate in their linear range. As a result, the magnetic currency verification head has high sensitivity and signal-to-noise ratio.
G01N 27/90 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques pour rechercher la présence des criques en utilisant les courants de Foucault
G01R 33/38 - Systèmes pour produire, homogénéiser ou stabiliser le champ magnétique directeur ou le champ magnétique à gradient
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G11C 19/08 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage utilisant des éléments magnétiques utilisant des couches minces dans une structure plane
85.
Direct read metering device and direct read water meter
The present invention discloses a direct read metering device, comprising a digital counting wheel connected with a rotary shaft, a micro-controller—a ring magnet coaxially installed on the digital counting wheel, and a tunneling magnetoresistive angular displacement sensor installed radially displaced from the central axis of the annular magnet; the tunneling magneto-resistive angular displacement sensor and the ring magnet are separated by a certain distance in the direction parallel to the central axis of the ring magnet; the micro-controller is connected to the tunneling magnetoresistive angular displacement sensor and used to convert the output of the tunneling magnetoresistive angular displacement sensor into a readable number. The device uses the tunneling magneto-resistive angular displacement sensor to sense the angle of a rotary magnetic field generated by the rotation of the ring magnet which is installed on the digital counting wheel in order to permit the code of the digital counting wheel to be determined when the meter is read, thus realizing a direct read metering function. This direct read metering function is applied to provide a direct read water meter.
G01F 1/075 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets mécaniques en utilisant des aubes tournantes avec admission tangentielle avec accouplement magnétique ou électromagnétique au dispositif indicateur
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01F 15/06 - Dispositifs d'indication ou d'enregistrement
The present invention discloses a magnetoresistive gear tooth sensor, which includes a magnetoresistive sensor chip and a permanent magnet. The magnetic sensor chip is comprised of at least one magnetoresistive sensor bridge, and each arm of the sensor bridge has at least one MTJ element group. The magnetoresistive gear tooth sensor has good temperature stability, high sensitivity, low power consumption, good linearity, wide linear range, and a simple structure. Additionally, the magnetoresistive gear tooth sensor has a concave soft ferromagnetic flux concentrator, which can be used to reduce the component of the magnetic field generated by the permanent magnet along the sensing direction of the MTJ sensor elements, enabling a wide linear range. Because it is arranged as a gradiometer, the magnetoresistive gear tooth sensor bridge is not affected by stray magnetic field; it is only affected by the gradient magnetic field generated by gear teeth in response to the permanent magnet bias. The magnetoresistive gear tooth sensor of the present invention is able to detect the position of a specific tooth or a missing tooth of a gear. This magnetoresistive gear tooth sensor is also capable of determining the speed and direction of motion of a gear.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01P 3/488 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer la vitesse angulaire en mesurant la fréquence du courant ou de la tension engendrés de signaux ayant la forme d'impulsions délivrés par des détecteurs à réluctance variable
G01P 3/54 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer une vitesse linéaire en mesurant la fréquence du courant ou de la tension engendrés
G01P 13/04 - Indication du sens positif ou négatif d'un mouvement linéaire ou du sens horaire ou anti-horaire d'un mouvement de rotation
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
Disclosed is a magnetoresistive magnetic field gradient sensor, comprising a substrate, a magnetoresistive bridge and a permanent magnet respectively disposed on the substrate; the magnetoresistive bridge comprises two or more magnetoresistive arms; each magnetoresistive arm consists of one or more magnetoresistive elements; each magnetoresistive element is provided with a magnetic pinning layer; the magnetic pinning layers of all the magnetoresistive elements have the same magnetic moment direction; the permanent magnet is disposed adjacent to each magnetoresistive arm to provide a bias field, and to zero the offset of the response curve of the magnetoresistive element; the magnetoresistive gradiometer includes wire bonding pads that can be electrically interconnected using wire bonding to an ASIC or to the lead frame of a semiconductor chip package.
G01B 7/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A current sensor comprises a sensor bridge, with magnetic tunnel junction (MTJ) elements, a MTJ temperature compensation resistor, and a current lead integrated onto a chip. The current lead is positioned close to the sensor bridge, and it is used to carry the test current. A permanent magnet is arranged at the periphery of the MTJ temperature compensation resistor. The permanent magnet rigidly aligns the magnetization direction of the free layer of the MTJ temperature compensation resistor anti-parallel to the magnetization direction of a pinning layer. The sensor bridge is connected in series with the MTJ temperature compensation resistor to temperature compensate the sensor bridge. A magnetic field generated by the test current produces an output voltage at the output of the temperature compensated sensor bridge that is proportional to the test current value.
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 19/32 - Compensation des variations de température
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 17/10 - Ponts de mesure alternatifs ou continus
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
89.
Magnetometer with dual purpose reset and calibration coil
The present invention discloses a magnetic field sensing device that utilizes a single coil for calibrating the response of the sensor to compensate for temperature dependent sensitivity drift and also for resetting the magnetic field sensor in order to eliminate hysteresis. The single coil configuration is advantageous since it reduces the size of the sensor chip by decreasing the number of contact pads on the chip and also because it wastes less space, which permits an increase in the density of the magnetoresistive elements on the sensor chip.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 35/00 - Test ou étalonnage des appareils couverts par les autres groupes de la présente sous-classe
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
The present invention discloses a triaxial magnetoresistive sensor. It comprises a substrate integrated with a biaxial magnetic field sensor, a Z-axis sensor that has a sensing direction along Z-axis perpendicular to the two axes of the biaxial magnetic field sensor, and an ASIC. The biaxial magnetic field sensor comprises an X-axis bridge sensor and a Y-axis bridge sensor. The Z-axis sensor and the two-axis sensor are electrically interconnected with the ASIC. A single-chip implementation of the triaxial magnetic field sensor comprises a substrate, onto which a triaxial magnetic field sensor and an ASIC are stacked. The triaxial magnetic field sensor comprises an X-axis bridge sensor, a Y-axis bridge sensor, and a Z-axis bridge sensor. The above design provides a highly integrated sensor with high sensitivity, low power consumption, good linearity, wide dynamic range, excellent thermal stability, and low magnetic noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
91.
Push-pull magnetoresistive sensor bridges and mass fabrication method
A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 21/00 - Dispositions pour procéder aux mesures de la puissance ou du facteur de puissance
G01R 21/06 - Dispositions pour procéder aux mesures de la puissance ou du facteur de puissance par mesure du courant et de la tension
G01R 22/10 - Dispositions pour la mesure de l'intégrale dans le temps d'une puissance électrique ou d'un courant, p.ex. compteurs d'électricité par des méthodes électroniques en utilisant des techniques numériques
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
93.
Single-chip referenced full-bridge magnetic field sensor
The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
94.
Single chip push-pull bridge-type magnetic field sensor
The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/08 - Résistances commandées par un champ magnétique
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G07F 1/00 - Dispositions pour l'introduction de pièces de monnaie; Pièces de monnaie spécialement adaptées pour faire fonctionner des mécanismes déclenchés par des pièces de monnaie
The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
96.
Single-chip bridge-type magnetic field sensor and preparation method thereof
The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p.ex. calcul quantique ou logique à un électron
97.
Full-bridge magnetoresistive rotation sensors and mass fabrication method
A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
G01B 7/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
H01L 43/08 - Résistances commandées par un champ magnétique
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
B82Y 25/00 - Nanomagnétisme, p.ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/08 - Résistances commandées par un champ magnétique
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
100.
Thin-film magnetoresistance sensing element, combination thereof, and electronic device coupled to the combination
A thin film magnetoresistive sensor for detecting a magnetic field components perpendicular and parallel to the plane of the sensor substrate is disclosed. The sensing element comprises a free layer, a reference layer, and a spacer layer between the free layer and the reference layer. The easy-axis magnetization inherent to the material of the free layer is arranged to be perpendicular to the plane of the sensor substrate. The magnetization direction of the reference layer is confined to a direction parallel to the substrate plane. The reference layer consists of a ferromagnetic layer exchange coupled to an antiferromagnetic layer, or consists of a ferromagnetic layer having a higher coercive force than that of the free layer. The spacer layer is composed of an insulating material or a conductive material. The magnetoresistive sensor further includes an array of aforementioned sensing elements coupled to an electronic device to provide three-axis sensing.
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
B82Y 25/00 - Nanomagnétisme, p.ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
brevets
