The present inventors have found that the content ratios of isoalloLCA, 3-oxoLCA, alloLCA, and 3-oxoalloLCA in the feces of centenarians are higher than those of younger ones, and have also identified gut microbiomes peculiar to centenarians involved in the production of these bile acids. Furthermore, it has been found that these bile acids, enzymes involved in the production thereof, and bacteria producing the enzymes reduce the risk of infection with pathogens, prostate cancer, and the like, and are involved in longevity.
G01N 33/569 - Tests immunologiques; Tests faisant intervenir la formation de liaisons biospécifiques; Matériaux à cet effet pour micro-organismes, p.ex. protozoaires, bactéries, virus
2.
RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN
A radiation-sensitive composition includes: a polymer comprising a first structural unit represented by formula (1); and a compound comprising an anion and a radiation-sensitive onium cation. At least one of the polymer and the compound has a ring structure having at least one iodine atom bonded to the ring structure. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond, —COO—, or —CONH—; Ar1 represents a group obtained by removing two hydrogen atoms from a substituted or unsubstituted aromatic hydrocarbon ring; and R2 represents an acid-labile group.
A radiation-sensitive composition includes: a polymer comprising a first structural unit represented by formula (1); and a compound comprising an anion and a radiation-sensitive onium cation. At least one of the polymer and the compound has a ring structure having at least one iodine atom bonded to the ring structure. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond, —COO—, or —CONH—; Ar1 represents a group obtained by removing two hydrogen atoms from a substituted or unsubstituted aromatic hydrocarbon ring; and R2 represents an acid-labile group.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
Provided is: a composition for forming a resist underlayer film, the composition being capable of forming a resist underlayer film that is excellent in terms of solvent resistance and pattern rectangularity; a method for producing a semiconductor substrate; and a polymer for forming a resist underlayer film. This composition for forming a resist underlayer film contains: a polymer that has a repeating unit represented by formula (1) or a repeating unit represented by formula (2); and a solvent. (In formula (1), Ar1represents a divalent group that has an aromatic ring having 6 to 20 ring members. RArepresents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms. In formula (2), Ar1represents a divalent group that has an aromatic ring having 6 to 20 ring members. R1and R3each independently represent a substituted or unsubstituted trivalent hydrocarbon group having 1 to 20 carbon atoms. R2and R4each independently represent a hydroxy group or a monovalent organic group. L1and L2each independently represent a single bond or a divalent linking group. RB represents a divalent organic group having 1 to 20 carbon atoms.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided is a radiation-sensitive composition comprising [A] a polymer having a hydroxyl group capable of binding to an aromatic ring and [B] a radiation-sensitive acid generator composed of a cation and a sulfonic acid anion, wherein the cation in the radiation-sensitive acid generator [B] has a fluorine atom, the sulfonic acid anion in the radiation-sensitive acid generator [B] has an aromatic ring (Ia) to which a iodine atom is bound and an aromatic ring (IIa) to which an acidic functional group is bound, no acid functional group is bound to the aromatic ring (Ia), and no iodine atom is bound to the aromatic ring (IIa).
C07D 307/12 - Radicaux substitués par des atomes d'oxygène
C07D 317/18 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples
C07D 317/70 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en ortho ou en péri avec des carbocycles ou avec des systèmes carbocycliques condensés avec des systèmes cycliques contenant au moins deux cycles déterminants
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
C07D 333/46 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome de soufre comme unique hétéro-atome du cycle non condensés avec d'autres cycles substitués sur l'atome de soufre du cycle
This method for selectively modifying a substrate surface comprises a step for applying a composition onto the surface of the substrate. The composition contains water and a compound (A) having a carboxylate anion component and a C8 or greater monovalent organic group.
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
C23C 26/00 - Revêtements non prévus par les groupes
6.
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
The present invention provides: a composition for forming a resist underlayer film, the composition being capable of forming a resist underlayer film that is excellent in terms of solvent resistance and pattern rectangularity; and a method for producing a semiconductor substrate. This composition for forming a resist underlayer film contains a polymer that has a repeating unit represented by formula (1), and a solvent. (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. L1represents a single bond or a divalent linking group. Ar1represents a monovalent group having an aromatic ring having 6 to 20 ring members. The hydrogen atom of the aromatic ring is substituted by at least one halogen atom. Ar1has at least one group that is selected from the group consisting of groups represented by formulae (2-1) to (2-8).) (In formulae (2-1) to (2-8), * represents a bond with an atom constituting Ar1, and R7represents a divalent organic group having 1 to 20 carbon atoms, or a single bond. In formula (2-1) and formula (2-7), R8, R9and R10each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. In formula (2-2), ** represents a bond with an atom constituting Cy. Cy represents a ring structure constituted together with two carbon atoms in the formula and having 3 to 20 ring members. R11represents a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or a bond with **. R12represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. In formula (2-3), R13 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
Provided are: a composition capable of forming an underlayer film for a metal-containing resist, the composition making it possible to obtain good rectangularity of a resist pattern; and a method for manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with an underlayer film-forming composition for a metal-containing resist; a step for coating, with a composition for forming a metal-containing resist film, the metal-containing resist underlayer film formed by the coating step for coating with an underlayer film-forming composition for a metal-containing resist; a step for exposing, to extreme ultraviolet radiation, the metal-containing resist film formed by the step for coating with a composition for forming a metal-containing resist film; and a step for developing at least the exposed metal-containing resist film. The underlayer film-forming composition for a metal-containing resist contains a compound having at least one structural unit selected from the group consisting of a structural unit (α-1) represented by formula (1-1) and a structural unit (α-2) represented by formula (1-2), and a solvent. The total content ratio of the structural unit (α-1) and the structural unit (α-2) to all structural units constituting the compound is 50 mol% to 100 mol%. In formula (1-1), X is a C1-20 monovalent aliphatic hydrocarbon group or a C1-20 monovalent aliphatic hydrocarbon group substituted with at least one halogen atom. a is an integer from 1 to 3. When a is 2 or more, the plurality of X's are the same or different from one another. Y is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. b is an integer from 0 to 2. When b is 2, the two Y's are the same or different from one another. a + b is less than or equal to 3. In formula (1-2), X represents a C1-20 monovalent aliphatic hydrocarbon group or a C1-20 monovalent aliphatic hydrocarbon group substituted with at least one halogen atom. c is an integer from 1 to 3. When c is 2 or more, the plurality of X's are the same or are different from one another. Y is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. d is an integer from 0 to 2. When d is 2, the two Y's are the same or different from one another. R0is a substituted or unsubstituted C1-20 divalent hydrocarbon group that is bonded to two silicon atoms. p is an integer from 1 to 3. When p is 2 or more, the plurality of R0's are the same or are different from one another. c + d + p is less than or equal to 4.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C09D 7/63 - Adjuvants non macromoléculaires organiques
C09D 183/16 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions de revêtement à base de dérivés de tels polymères dans lesquels tous les atomes de silicium sont liés autrement que par des atomes d'oxygène
10.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND
A polymer containing a structural unit (I) represented by formula (1) is included in a radiation-sensitive composition. In formula (1), R2 is a single bond, a divalent hydrocarbon group, or the like. R3 is a divalent group represented by formula (2) or formula (3). R4 is a divalent organic group. Y− is a monovalent anion which can generate a sulfonic acid group, an imidic acid group, or a methide acid group through exposure to light. Ma+ is an a-valent cation. a is 1 or 2.
A polymer containing a structural unit (I) represented by formula (1) is included in a radiation-sensitive composition. In formula (1), R2 is a single bond, a divalent hydrocarbon group, or the like. R3 is a divalent group represented by formula (2) or formula (3). R4 is a divalent organic group. Y− is a monovalent anion which can generate a sulfonic acid group, an imidic acid group, or a methide acid group through exposure to light. Ma+ is an a-valent cation. a is 1 or 2.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A radiation-sensitive resin composition includes: a compound A represented by formula (I); a resin B including a structural unit having an acid-dissociable group; a radiation-sensitive acid generator other than the compound A; and a solvent. R1 is an (m+m′)-valent organic group and comprises a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both; X1 is a group represented by formula (1-1) or a group represented by formula (1-2); X2 is a group represented by formula (2-1) or a group represented by formula (2-2); Y+ is a monovalent onium cation; m is an integer of 1 to 2, and m′ is an integer of 0 to 1. * represents a bond to another group.
A radiation-sensitive resin composition includes: a compound A represented by formula (I); a resin B including a structural unit having an acid-dissociable group; a radiation-sensitive acid generator other than the compound A; and a solvent. R1 is an (m+m′)-valent organic group and comprises a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both; X1 is a group represented by formula (1-1) or a group represented by formula (1-2); X2 is a group represented by formula (2-1) or a group represented by formula (2-2); Y+ is a monovalent onium cation; m is an integer of 1 to 2, and m′ is an integer of 0 to 1. * represents a bond to another group.
A method for producing polypropylene-based resin expanded beads includes dispersion, blowing agent impregnation, and foaming steps. Beads used in the dispersion step include a core layer having a polypropylene-based resin as a base material resin, and a fusion-bonding layer covering core layer; the beads fusion-bonding layer includes carbon black and a NOR-type hindered amine; a carbon black blending ratio is adjusted to 0.5 wt % or more and 5 wt % or less; and an amine blending ratio of the beads is adjusted to 0.03 wt % or more and 0.5 wt % or less; the polypropylene-based resin expanded beads have a surface on which a fusion-bonding layer is located; the fusion-bonding layer includes the carbon black and hindered amine; a carbon black blending ratio is 0.5 wt % or more and 5 wt % or less; and a blending ratio of the hindered amine is 0.03 wt % or more and 0.5 wt % or less.
C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
C08J 9/232 - Façonnage d'articles en mousse par frittage de particules expansibles
The present invention pertains to expanded beads of a polypropylene-based resin. An expansion layer forming the expanded beads contains the polypropylene-based resin as a base resin and contains a cyclic phosphonate-based compound and an NOR-type hindered amine-based compound. The blended amount of the cyclic phosphonate-based compound in the expansion layer is not less than 5 parts by mass but less than 25 parts by mass with respect to 100 parts by mass of resins forming the expansion layer. The blended amount of the NOR-type hindered amine-based compound in the expansion layer is not less than 0.1 parts by mass but less than 5 parts by mass with respect to 100 parts by mass of resins forming the expansion layer. The expansion layer contains a phenol-based antioxidant. The blended amount of the phenol-based antioxidant in the expansion layer is not less than 0.01 parts by mass but less than 0.5 parts by mass with respect to 100 parts by mass of resins forming the expansion layer. The ratio of the blended amount of the phenol-based antioxidant with respect to the blended amount of the NOR-type hindered amine-based compound is 0.03-0.9. The present invention also pertains to an expanded bead molded body obtained through in-mold molding of the expanded beads.
Provided are: a radiation-sensitive composition which can be formed into a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance and post-develop defect suppression properties when a next-generation technology is applied; and a pattern formation method. The radiation-sensitive composition comprises: a radiation-sensitive acid-generating polymer that contains a first organic acid anion and a first onium cation; at least one component selected from the group consisting of a radiation-sensitive acid generator that contains a second organic acid anion and a second onium cation and has a smaller molecular weight than that of the radiation-sensitive acid-generating polymer and an acid diffusion controlling agent that contains a third organic acid anion and a third onium cation and generates, upon the irradiation with a radioactive ray, an acid having a higher pKa value than that of an acid generated from the radiation-sensitive acid-generating polymer; and a solvent. In the composition, at least one of the first onium cation, the second onium cation and the third onium cation is an iodine/fluorine-containing onium cation that contains an iodine atom and a fluorine atom.
C08F 22/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone, l'un au moins étant terminé par un radical carboxyle et contenant au moins ; Leurs sels, anhydrides, esters, amides, imides ou nitriles
A polymer containing a structural unit represented by formula (1) is included in this radiation-sensitive composition. In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; X1represents a single bond, *1-COO-, *1-CONH-, or a divalent aromatic ring group; W1represents a (r+2)-valent organic group; X2represents *3-COO- or -O-; G1represents an acid-dissociable group; r represents 1 or 2; R2and R3each independently represent a fluorine atom or a fluoroalkyl group; and Ma+ represents an a-valent cation.
One embodiment of the present invention relates to a photosensitive resin composition. The photosensitive resin composition contains a polymer (A) having an acid-dissociable group, a photoacid generator (B), a solvent (C), and a compound (D). The compound (D) is decomposed by the action of an acid generated from the photoacid generator (B) to become a compound (d) and has a group that is decomposed by the action of the acid to generate a compound (d') (where the compound (D) is different from the polymer (A), and the compound (d) and the compound (d') are non-basic compounds). The boiling point of the compound (d') is 65°C or higher.
The composition contains: at least one compound selected from the group consisting of a first compound represented by formula (2) and a second compound having a metal atom and a ligand represented by formula (1); and an aqueous solvent.
C07F 15/00 - Composés contenant des éléments des groupes 8, 9, 10 ou 18 de la classification périodique
C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD)
18.
METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEAD AND METHOD FOR PRODUCING MOLDED ARTICLE OF EXPANDED BEADS
A method for producing polypropylene-based resin (PPBR) expanded beads may include dispersing, first expanding, and second expanding. In the dispersing, resin particles are dispersed in a dispersion medium, the resin particles each including a core layer, containing carbon black blended into PPBR in a predetermined ratio, based on 100 parts by mass of PPBR, and a covering layer covering the core layer, containing carbon black blended into a polyolefin-based resin (POBR) in a predetermined ratio, based on 100 parts by mass of POBR. The first expanding expands the core layer of the resin particle to obtain a first expanded bead having a bulk ratio of 5 to 25 times. The second expanding expands the first expanded beads further to obtain second expanded beads. An M2/M1 ratio of a bulk ratio M2 of the second expanded beads to a bulk ratio M1 of the first expanded beads is 1.2 to 3.0.
C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
B29C 44/02 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage pour la fabrication d'objets de longueur définie, c.à d. d'objets séparés
B29C 44/34 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage - Eléments constitutifs, détails ou accessoires; Opérations auxiliaires
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
B29K 105/00 - Présentation, forme ou état de la matière moulée
B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse
C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
19.
RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD
Provided are a radiation-sensitive composition which can be formed into a resist film capable of providing satisfactory levels of sensitivity and CDU performance when a next-generation technology is applied, and a pattern formation method. The radiation-sensitive composition comprises: a radiation-sensitive acid-generating polymer containing a structural unit (I) having an acid-dissociable group represented by formula (1), and a structural unit (II) having an organic acid anion (b1) and an onium cation (b2); and a solvent. The radiation-sensitive acid-generating polymer has an iodine-substituted aromatic ring structure. (In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2is a single bond or a divalent organic group. R3, R4, and R5are each independently a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, or a monovalent organic group represented by –OR7(R7is a C1 to C12 monovalent hydrocarbon group). R6is a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, a cyano group, a nitro group, or an amino group. When there are a plurality of R6, the R6 may be the same or different. Cy represents a 3- to 20-membered alicyclic structure formed together with carbon atoms bonded thereto. r is an integer of 0 to 10. r is equal to or less than (one less than the number of ring members in the alicyclic structure).
Provided is an antibacterial composition against a second bacterium that consumes gluconic acid, such as inflammation-inducing bacteria and drug-resistant bacteria, the composition containing, as an active ingredient, a first bacterium that consumes gluconic acid.
C12Q 1/04 - Détermination de la présence ou du type de micro-organisme; Emploi de milieux sélectifs pour tester des antibiotiques ou des bactéricides; Compositions à cet effet contenant un indicateur chimique
The present invention provides a chemical-mechanical polishing composition with which it is possible to increase the polishing rate of a tungsten film and reduce the occurrence of corrosion and defects on the tungsten surface, and also provides a polishing method. This chemical-mechanical polishing composition contains (A) abrasive grains, (B) a heterocyclic compound, and (C) a liquid medium, and MA/MB=50 to 10,000, where MA (parts by mass) is the (A) component content, and MB (parts by mass) is the (B) component content.
The present invention provides a chemical-mechanical polishing composition with which it is possible to increase the polishing rate of a tungsten film and reduce the occurrence of corrosion and defects on the tungsten surface, and also provides a polishing method. This chemical-mechanical polishing composition contains: (A) abrasive grains; (B1) a heterocyclic compound that does not include a halogen atom; (B2) a heterocyclic compound that includes at least one halogen atom; and (C) a liquid medium. The (A) component content is 1-20 parts by mass, inclusive, relative to 100 parts by mass of the chemical-mechanical polishing composition.
The present invention provides a method for selectively modifying a substrate surface, the method comprising a step for applying a composition to the surface of the substrate, the composition containing water and a compound (A) having a nitrogen-containing heterocyclic ring and a monovalent organic group having 4 or more carbon atoms.
The present invention provides: a radiation-sensitive composition that can form a resist film capable of exhibiting a sufficient level of sensitivity, LWR, pattern rectangularity, image development defect performance, EL, CDU, and pattern circularity; a pattern formation method; and a radiation-sensitive acid generation agent. The radiation-sensitive composition contains: an onium salt compound represented by formula (1); a polymer including a structural unit having an acid dissociable group; and a solvent. (In formula (1), W is a C3-40 organic group having at least one ring structure. L is a linking group having a valency of (r+1), where r is an integer between 1 and 3. When r is 1, p and q are both integers between 1 and 3, and when r is 2 or 3, each of p and q is an integer between 0 and 3. However, when r is 2 or 3, at least one among the plurality of ps is 1 or more and at least one among the plurality of qs is 1 or more. M+ is a monovalent onium cation.)
A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.
A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
In a method for manufacturing a molded article of polypropylene-based resin expanded beads, expanded beads compressed by pressurized gas are filled in a mold, and then a heating medium is supplied into the mold to perform in-mold molding on the expanded beads in the mold. The expanded bead has a tubular shape with a through-hole. An average hole diameter d of the through-hole is 0.1 mm or more and less than 1 mm, and a ratio d/D of the average hole diameter d of the through-hole to an average outer diameter D of the expanded bead is 0.4 or less. A compression ratio P of the expanded beads in a state where the expanded beads are filled in the mold is 20% or more and 80% or less.
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29C 44/34 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage - Eléments constitutifs, détails ou accessoires; Opérations auxiliaires
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse
27.
RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD
Provided are: a radiation-sensitive composition which makes it possible to form a resist film that is capable of exhibiting satisfactory levels of sensitivity and LWR when a next-generation technology is applied; and a pattern forming method. Specifically provided is a radiation-sensitive composition which comprises a solvent and a radiation-sensitive acid-generating polymer containing a structural unit (I) represented by formula (1) and a structural unit (II) having an acid dissociable group. (In formula (1), Ar represents an (n + m + r + 1)-valent aromatic hydrocarbon group; R11represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; R12represents a cyano group, a nitro group, an alkyl group, an alkoxy group, a fluorinated alkyl group or an acyl group; in cases where a plurality of R12moieties are present, the plurality of R12moieties may be the same as or different from each other; L represents a single bond or a divalent linking group; Rf1and Rf2each independently represent a hydrogen atom, a fluorine atom or a monovalent fluorinated hydrocarbon group, provided that the Rf1and Rf2moieties are not hydrogen atoms at the same time; Rf3and Rf4each independently represent a hydrogen atom, a fluorine atom or a monovalent fluorinated hydrocarbon group; in cases where a plurality of Rf3moieties and a plurality of Rf4moieties are present, the plurality of Rf3moieties and the plurality of Rf4moieties may be the same as or different from each other, respectively; n represents an integer of 1 to 10; m represents an integer of 0 to 3; p represents an integer of 0 to 10; r represents 1 or 2; and M+ represents a monovalent onium cation.)
The multilayer foam sheet includes a polyethylene resin foam layer and a resin layer laminated on at least one of the two surfaces of the foam layer. The resin layer has a multilayer structure formed from a surface layer and an intermediate layer. Both the surface layer and the intermediate layer contain a polyethylene resin and a polymeric antistatic agent. The polymeric antistatic agent is contained in the intermediate layer at a proportion of 30-70 wt % (inclusive). The polymeric antistatic agent is contained in the surface layer at a proportion of at least 5 wt % to less than 30 wt %.
B29C 48/00 - Moulage par extrusion, c. à d. en exprimant la matière à mouler dans une matrice ou une filière qui lui donne la forme désirée; Appareils à cet effet
B29C 48/21 - Articles comprenant au moins deux composants, p.ex. couches coextrudées les composants étant des couches les couches étant jointes à leurs surfaces
B29K 25/00 - Utilisation de polymères de composés vinylaromatiques comme matière de moulage
B29K 105/00 - Présentation, forme ou état de la matière moulée
B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse
B29L 7/00 - Objets plats, p.ex. pellicules ou feuilles
29.
POLYPROPYLENE-BASED RESIN EXPANDED BEAD, METHOD FOR PRODUCING SAME, AND MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS
A polypropylene-based resin expanded bead having a tubular shape with a through-hole, containing a foamed core layer constituted by a polypropylene-based resin and a fusion-bonding layer covering the foamed core layer. An average hole diameter d of the through-hole in the expanded bead is less than 1 mm, and a ratio d/D of the average hole diameter d to an average outer diameter D of the expanded bead is 0.4 or less, a mass ratio of the foamed core layer and the fusion-bondable layer is foamed core layer:fusion-bondable layer=99.5:0.5 to 85:15, and the polypropylene-based resin constituting the foamed core layer has a flexural modulus of 800 MPa or more and less than 1200 MPa and a melting point Tmc of 150° C. or lower.
A composition includes: a metal compound; a compound having an oxymethylene structure; and a solvent. The metal compound is a metal salt or a metal complex. The compound having an oxymethylene structure is capable of generating an aldehyde structure when degraded through heating. A metal atom contained in the metal compound preferably belongs to any one of periods 3 to 7 among groups 2 to 14 in a periodic table.
A culture method includes culturing a spheroid of a human neural cell-like cell in the presence of a tau protein aggregate and culturing a culture product in a culture medium containing 5 μg/mL or greater of a lipid, in which the lipid is one or more selected from the group consisting of a glycerolipid, a glycerophospholipid, and a sphingolipid. The culture method includes culturing a spheroid of a human neural cell-like cell in the presence of a tau protein aggregate and culturing a culture product in a culture medium containing a neurotrophic factor.
Provided are: polyamide-based resin foamed particles exhibiting good in-mold moldability and capable of providing a foamed particle molded body exhibiting excellent flame retardancy; and a polyamide-based resin foamed particle molded body excellent in moldability and flame retardancy. The polyamide-based resin foamed particles according to the present invention comprise a polyamide-based resin, a certain flame retardant a, and a certain flame retardant b, wherein the total of the blended amount of the flame retardant a and the blended amount of the flame retardant b is 10-30 parts by mass based on 100 parts by mass of a base material resin including the polyamide-based resin, the mass ratio between the blended amount of the flame retardant a and the blended amount of the flame retardant b is 90:10 to 30:70 (the total of the flame retardant a and the flame retardant b is 100% by mass), the average bubble diameter A of the polyamide-based resin foamed particles is 5-100 μm, and the average bubble diameter B of five bubbles selected in descending order of area per one bubble among bubbles observed on a cut surface formed by bisecting a polyamide-based resin foamed particle is 250 μm or less. The polyamide-based resin foamed particle molded body is formed by in-mold molding the polyamide-based resin foamed particles.
Provided are a radiation-sensitive composition and pattern formation method that, when next generation technology is employed, can form a resist film that can exhibit sensitivity, CDU, a residual film ratio, LWR, and pattern rectangularity at satisfactory levels. The radiation-sensitive composition comprises a solvent (C) and a radiation-sensitive acid-generating polymer (P) containing a structural unit (II) having a first organic acid anion and a first onium cation. The radiation-sensitive composition also satisfies at least one condition selected from the group consisting of the following condition 1 and condition 2. < Condition 1 > The radiation-sensitive composition contains at least one selection from the group consisting of radiation-sensitive acid generators (A) that contain a second organic acid anion and a second onium cation and have a molecular weight lower than the radiation-sensitive acid-generating polymer and radiation-sensitive weak acid generators (B1) that contain a third organic acid anion and a third onium cation and that upon exposure to radiation generate an acid having a pKa higher than that of the acid generated from the radiation-sensitive acid-generating polymer (P). In addition, at least one selection from the group consisting of the radiation-sensitive acid-generating polymer (P), the radiation-sensitive acid generator (A), and the radiation-sensitive weak acid generator (B1) contains the iodine atom. In addition, at least one of the first onium cation, second onium cation, and third onium cation contains the fluorine atom. < Condition 2 > The radiation-sensitive acid-generating polymer (P) contains a structural unit (I) having an acid-dissociable group; the radiation-sensitive composition contains at least two acid diffusion control agents (B), one of which has an organic acid anion (b1) and a fluorine-containing onium cation (b2) containing the fluorine atom; and the radiation-sensitive composition contains a radiation-sensitive weak acid generator (B11) that, under conditions in which dissociation of the acid-dissociable group is caused by the acid produced by exposure of the radiation-sensitive acid-generating polymer to radiation, generates an acid that does not induce dissociation of the acid-dissociable group.
A chromatographic device, including a housing including an inlet and an outlet of a fluid, an inlet distribution plate positioned inside the housing such that the inlet distribution plate receives a fluid flowing through the inlet and distributes the flow inside the housing, an inlet frit plate positioned on the inlet distribution plate, a chromatography medium placed inside the housing, at least one multi-planar screen positioned inside the housing to receive the fluid to be separated from the inlet distribution plate and the inlet frit plate, the multi-planar screen being structured such that the chromatography medium is held inside thereof, and that the fluid to be separated from the inlet distribution plate and the inlet frit plate passes through the chromatography medium, an outlet distribution plate that receives the fluid separated, and an outlet frit plate positioned on the outlet distribution plate such that the outlet frit plate receives a force created by the flow of the fluid through the chromatography medium.
B01D 15/14 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à l'introduction de l'alimentation dans l'appareil
B01D 15/18 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives aux différents types d'écoulement
B01D 15/22 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à la structure de la colonne
35.
DATA COLLECTION ASSISTANCE PROGRAM, DATA COLLECTION ASSISTANCE METHOD, AND DATA COLLECTION ASSISTANCE DEVICE
The present invention assists efficient collection of material data. A storage unit (11) stores a plurality of material data acquired from a database (21). The plurality of material data are used for creating a prediction model (11a) for predicting material properties. A processing unit (12), upon receiving a request to register a first material data in the database (21), calculates an evaluation value on the basis of the plurality of material data stored in the storage unit (11) and the first material data, the evaluation value indicating the usefulness of the first material data with respect to the prediction model (11a), and outputs the evaluation value.
Provided is a composition for chemical mechanical polishing which, when used for chemical mechanical polishing (CMP) of a semiconductor wafer including a molybdenum film and a silicon oxide film, can selectively polish the molybdenum film by attaining an increased molybdenum-film polishing rate and a reduced silicon-oxide-film polishing rate and which can be inhibited from corroding the molybdenum film. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a compound represented by general formula (1), (C) a compound having both a C10 or higher alkyl group and at least one functional group selected from the group consisting of an amino group and salts thereof, and (D) an iron(III) compound, wherein, when the content of the (B) component is expressed by MB (parts by mass) and the content of the (C) component is expressed by MC (parts by mass), then MB/MC is 0.01-45. The composition for chemical mechanical polishing has a pH of 1-5. (In formula (1), R1, R2, and R3each independently represent an alkyl group having up to n carbon atoms, R4represents an aryl group, a hydroxy group, or a C5 or less alkyl group, M- represents a monovalent anion, and n is an integer of 1-4.)
A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C08F 26/06 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocycle contenant de l'azote
The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4−), hypochlorite ions (CIO−), chlorite ions (CIO2−) and hypobromite ions (BrO−) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).
A biomimetic system includes: a container; and a human cholangiocyte-like cell-containing membrane, in which the human cholangiocyte-like cell-containing membrane includes a permeable base plate and a two-dimensional tissue of human cholangiocyte-like cells stacked on one surface of the permeable base plate, the human cholangiocyte-like cell-containing membrane divides the container into a first compartment and a second compartment, a one surface side of the permeable base plate is exposed in the first compartment, the other surface side of the permeable base plate is exposed in the second compartment, the human cholangiocyte-like cells express P-gp, and an efflux ratio calculated by Formula (1) is 1.5 or more, efflux ratio=(permeation rate of rhodamine 123 that permeates from the second compartment to the first compartment)/(permeation rate of rhodamine 123 that permeates the second compartment from the first compartment) . . . (1)
C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie
C12M 1/12 - Appareillage pour l'enzymologie ou la microbiologie avec des moyens de stérilisation, filtration ou dialyse
C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
G01N 33/50 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique
40.
METHOD FOR PRODUCING POLYMER, POLYMER PRODUCTION DEVICE, AND SYSTEM FOR OPTIMIZING RADICAL POLYMERIZATION REACTION
C08F 20/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et un seul étant terminé par un seul radical carboxyle ou un sel, anhydride,
41.
SPIN CURRENT MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY
A spin current magnetization rotating element includes: a first ferromagnetic layer having a magnetization direction which is changeable; and a spin-orbit torque wiring layer adjacent to the first ferromagnetic layer. At least one element in the spin-orbit torque writing layer has a crystal structure in which, when dimensions of a lattice constant of the crystal structure are expressed by a, b, and c: atoms occupy internal coordinates: (0, 0, 0), (0.5, 0.5, 0), (0.25, 0.75, 0.25), (0.75, 0.25, 0.25), (0, 0.5, 0.5), (0.5, 0, 0.5), (0.75, 0.75, 0.75), and (0.25, 0.25, 0.75); ab planes are laminated so as to have a four-time spiral structure along c axis; and an angle between a axis and b axis (γ) is in a range of 60° ≤ γ ≤ 120°, and a ratio of b to a (b/a) is in a range of 0.2 ≤ b/a ≤ 1.0.
The present invention provides a radiation-sensitive composition and pattern formation method capable of forming a resist film which can provide sufficient levels of sensitivity, resolution, and CDU performance when applying next-generation technologies. The present invention pertains a radiation-sensitive composition that is a combination of: a radiation-sensitive acid-generating polymer which includes a solvent and two or more onium salts including organic acid anions and onium cations, wherein the onium salt includes a structural unit (I) represented by formula (1) below and a structural unit (II) having the abovementioned organic acid anions and the abovementioned onium cations; and at least one substance selected from the group consisting of a radiation-sensitive acid generating agent including the abovementioned organic acid anions and abovementioned onium cations, and an acid diffusion control agent which includes the abovementioned organic acid anions and the abovementioned onium cations and generates an acid having a higher pKa than the acid generated by the radiation-sensitive acid-generating agent due to irradiation, at least some of the onium cations in the radiation-sensitive acid-generating agent and the acid diffusion control agent being fluorine-containing onium cations including a fluorine atom. (In formula (1), Rαis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L is a single bond or a divalent linking group. P is 0 or 1. R101is a halogen atom, a nitro group, a cyano group, a hydroxy group, an alkoxy group, or an amino group. When a plurality of R101are present, the plurality of R101can be identical or different. Q is an integer from 0 to 3. R1 is an acid-dissociable group having a tertiary carbon atom bonded to an oxygen atom.)
The multilayer foam sheet has a surface resistivity of 1×1013Ω or less and has a foam layer and resin layers that are laminated on both surfaces of the foam layer. The resin layers each have a multilayer structure formed from a surface layer and an intermediate layer that is positioned between the surface layer and the foam layer. The foam layer includes a polyethylene-based resin PE2. The intermediate layers are configured from an antistatic mixture containing a polyethylene-based resin PE3 and a polymeric antistatic agent. The surface layers are configured from a mixed resin containing a polyethylene-based resin PE4 and a polystyrene-based resin, and substantially do not contain the polymeric antistatic agent. The polystyrene-based resin content of the mixed resin is 3-35 wt %.
B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
B29C 48/00 - Moulage par extrusion, c. à d. en exprimant la matière à mouler dans une matrice ou une filière qui lui donne la forme désirée; Appareils à cet effet
B29C 48/21 - Articles comprenant au moins deux composants, p.ex. couches coextrudées les composants étant des couches les couches étant jointes à leurs surfaces
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
B29K 25/00 - Utilisation de polymères de composés vinylaromatiques comme matière de moulage
B29K 105/00 - Présentation, forme ou état de la matière moulée
B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 27/18 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
B32B 37/14 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches
B32B 37/15 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche qui est fabriquée et immédiatement stratifiée avant d'atteindre un état stable, p.ex. dans lesquels une couche est extrudée et stratifiée à l'état semi-pâteux
B32B 38/00 - Opérations auxiliaires liées aux procédés de stratification
44.
RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND
Provided is a radiation-sensitive composition having excellent sensitivity, CDU and preservation stability. The radiation-sensitive composition comprises: a polymer, the solubility of which in a developing solution changes due to the action of an acid; an anion represented by formula (1); and a radiation-sensitive onium cation which includes an aromatic ring that has at least one hydrogen atom substituted with a fluorine atom or a fluorine atom-containing group.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
Produits et services
Unprocessed artificial resins as raw materials in the form
of powders, liquids or pastes; unprocessed synthetic resins;
thermally curable unprocessed synthetic resins;
thermoplastic resins, unprocessed; unprocessed artificial
resins for use in manufacture; chemical coatings used in the
manufacture of printed circuit boards; chemicals for use in
industry; synthetic resin adhesives for industrial purposes;
contact adhesives for use with laminates; adhesives for
industrial purposes. Semi-processed synthetic resins; semi-processed
thermoplastic polymer resins for use in manufacture;
semi-processed plastic substances made of thermally curable
resins; semi-processed plastics.
46.
METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM
A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C09D 161/06 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes avec des phénols
C09D 161/12 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes avec des phénols avec des phénols polyhydriques
H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
An object of the present invention is to provide a photosensitive composition capable of producing a pattern having a precise shape without causing curing defects of a coating film even when the time is required from exposure of the coating film to the next step. A photosensitive composition of the present invention contains a polymer (A), a polymerizable compound (B), a photoacid generator (C), and a solvent (D), in which the polymerizable compound (B) includes an epoxy compound (B-1) containing two or more groups represented by the following Formula (1) and a specific epoxy compound (B-2) other than the epoxy compound (B-1), and an epoxy compound containing an epoxy group fused to an alicyclic group is contained in an amount of 50 mass % or more with respect to a total of 100 mass % of the polymerizable compound (B).
An object of the present invention is to provide a photosensitive composition capable of producing a pattern having a precise shape without causing curing defects of a coating film even when the time is required from exposure of the coating film to the next step. A photosensitive composition of the present invention contains a polymer (A), a polymerizable compound (B), a photoacid generator (C), and a solvent (D), in which the polymerizable compound (B) includes an epoxy compound (B-1) containing two or more groups represented by the following Formula (1) and a specific epoxy compound (B-2) other than the epoxy compound (B-1), and an epoxy compound containing an epoxy group fused to an alicyclic group is contained in an amount of 50 mass % or more with respect to a total of 100 mass % of the polymerizable compound (B).
-
L
-
Ep
(
1
)
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/033 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques avec des liants les liants étant des polymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone, p.ex. polymères vinyliques
48.
RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
This radiation-sensitive composition contains: a polymer which has a first structural unit containing a partial structure in which a hydrogen atom of a carboxy group or a phenolic hydroxyl group is substituted with an acid dissociation group represented by formula (1); and a compound which has an anion section including one anion group and an aromatic ring in which one or more hydrogen atoms are substituted with an iodine atom, and also has a radiation-sensitive onium cation section.
Provided are: a semiconductor substrate production method using a composition which is capable of forming a film that has excellent heat resistance and bending resistance; the composition; and a polymer. This semiconductor substrate production method comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on a resist underlayer film formed in the application step; and a step for performing etching using the resist pattern as a mask, the resist underlayer film-forming composition containing a solvent and a polymer having a repeating unit represented by formula (1). [Formula 1] (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring structure. Z is a divalent group having an alicyclic structure with 3 to 20 carbons. Either Ar1and/or Z includes at least one group having at least one group selected from the group consisting of a group represented by formula (2-1) and a group represented by formula (2-2).) [Formula 2] (In formulae (2-1) and (2-2), R7 is, independently, a single bond or a divalent organic group with 1 to 20 carbons, and * is a bond with another structure in the polymer.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided are: a polypropylene-based resin foam particle which contains a biomass-derived polypropylene-based resin and can provide a superior polypropylene-based resin foam particle molded article; and a polypropylene-based resin foam particle molded article which is produced using the polypropylene-based resin foam particle. In the polypropylene-based resin foam particle, a base resin for the foam particle comprises a biomass-derived polypropylene-based resin A having a biomass-derived monomer component in a molecule chain thereof and a fossil fuel-derived polypropylene-based resin B, in which the base resin comprises 3% by weight to 60% by weight inclusive of the biomass-derived polypropylene-based resin A and 40% by weight to 97% by weight inclusive of the fossil fuel-derived polypropylene-based resin B (in which the total of the amounts of both of the components is 100% by weight). The foam particle molded article is formed by molding the polypropylene-based resin foam particle in a mold.
Provided are: a radiation-sensitive resin composition which can be formed into a resist film capable of providing satisfactory levels of sensitivity and CDU performance when a next-generation technology is applied; and a pattern formation method. This radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit (I) and a structural unit (II), wherein the structural unit (I) has an acid dissociable group, the structural unit (II) has an organic acid anionic moiety and an onium cationic moiety, and each of the acid dissociable group and the organic acid anionic moiety has an iodine-substituted aromatic ring structure; and a solvent.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
EXPANDED PARTICLES OF POLYPROPYLENE-BASED RESIN, METHOD FOR PRODUCING SAME, AND MOLDED OBJECT FORMED FROM EXPANDED PARTICLES OF POLYPROPYLENE-BASED RESIN
Expanded particles of a polypropylene-based resin, which contain an inorganic phosphinic acid salt and a melamine-compound flame retardant. In the expanded particles, the amount of the inorganic phosphinic acid salt incorporated therein is 0.5 mass% or more, the amount of the melamine-compound flame retardant incorporated therein is 0.05 mass% or more, and the sum of the amount of the inorganic phosphinic acid salt incorporated therein and the amount of the melamine-compound flame retardant incorporated therein is 5 mass% or less. The expanded particles further contain a first antioxidant which comprises a phenolic antioxidant and a second antioxidant which comprises a phosphorus-compound antioxidant and/or a sulfur-compound antioxidant. In the expanded particles, the sum of the amount of the first antioxidant incorporated therein and the amount of the second antioxidant incorporated therein is 0.05-0.6 mass%, and the ratio of the amount of the second antioxidant incorporated therein to the amount of the first antioxidant incorporated therein is 0.5-10.
The invention relates to a method for producing cellular plastic particles, including the steps of: —providing a plastic material in the form of pre-expanded plastic material particles, —loading the pre-expanded plastic material particles with a blowing agent under the influence of pressure, —expanding the pre-expanded plastic material particles loaded with blowing agent in order to produce cellular plastic particles, more particularly, cellular plastic particles having lower density, under the influence of temperature, in which the expanding of the plastic material particles loaded with blowing agent is carried out under the influence of temperature by irradiation of the plastic material particles loaded with blowing agent with high-energy thermal radiation, more particularly, infrared radiation.
A fireproof heat insulating board including a foamed resin molded body filled with a slurry, the foamed resin molded body having continuous voids, wherein the filled slurry forms a hydrate containing water of crystallization in an amount of 50 kg/m3 or more through hydration reaction after the filling, and at least a part of the surface of the board is reinforced with one or more inorganic fibers selected from the group consisting of a basalt fiber and a ceramic fiber.
E04B 1/94 - Protection contre d'autres agents indésirables ou dangers contre le feu
B32B 5/02 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments
B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
B32B 5/24 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses une des couches étant fibreuse ou filamenteuse
C04B 28/14 - Compositions pour mortiers, béton ou pierre artificielle, contenant des liants inorganiques ou contenant le produit de réaction d'un liant inorganique et d'un liant organique, p.ex. contenant des ciments de polycarboxylates contenant des ciments de sulfate de calcium
C04B 28/16 - Compositions pour mortiers, béton ou pierre artificielle, contenant des liants inorganiques ou contenant le produit de réaction d'un liant inorganique et d'un liant organique, p.ex. contenant des ciments de polycarboxylates contenant des ciments de sulfate de calcium contenant de l'anhydrite
C04B 111/00 - Fonction, propriétés ou utilisation des mortiers, du béton ou de la pierre artificielle
The purpose of the present invention is to provide: a composition which can form a silicon-containing film with which it is possible to suppress resist pattern collapsing and improve film removability; and a method for producing a semiconductor substrate. Provided is a composition which comprises: a compound having at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2) (in which, when the compound has a structural unit represented by formula (1-1), the compound has at least one structural unit selected from the group consisting of a structural unit represented by formula (1-2) and a structural unit represented by formula (2-1)); and a solvent. (In formula (1-1), X represents a monovalent organic group having 2 to 20 carbon atoms and having a heteroaromatic ring; a represents an integer of 1 to 3; when a is 2 or more, a plurality of X's are the same as or different from each other; Y represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom; b represents an integer of 0 to 2; when b is 2, the two Y's are the same as or different from each other; and a+b is 3 or less. In formula (1-2), X represents a monovalent organic group having 2 to 20 carbon atoms and having a heteroaromatc ring; c represents an integer of 1 to 3; when c is 2 or more, a plurality of X's are the same as or different from each other; Y represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom; d represents an integer of 0 to 2; when d is 2, the two Y's are the same as or different from each other; R0represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 20 carbon atoms and bound to two silicon atoms; p represents an integer of 1 to 3; when p is 2 or more, a plurality of R0's are the same as or different from each other; and c+d+p is 4 or less.) (In formula (2-1), R1represents a monovalent organic group having 1 to 20 carbon atoms (excluding a heteroaromatic ring), a hydroxy group, a hydrogen atom or a halogen atom; h represents 1 or 2; when h is 2, the two R1's are the same as or different from each other; R2represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 20 carbon atoms and bound to two silicon atoms; q represents an integer of 1 to 3; when q is 2 or more, a plurality of R2's are the same as or different from each other; and h+q is 4 or less.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
C08L 83/14 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions contenant des dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité sont liés autrement que par des atomes d'oxygène
The present invention provides a method for producing a foam particle molded body, wherein a mold is filled with cylindrical foam particles (1) having through holes, and a heating medium is supplied to fusion bond the foam particles (1) to each other, thereby producing a foam particle molded body. The foam particles (1) each have a foam layer that is configured from a polyethylene resin. The closed cell ratio of the foam particles (1) is 80% or more. The average diameter (d) of the through holes (11) in the foam particles (1) is less than 1 mm. The ratio (d/D) of the average diameter (d) to the average outer diameter (D) of the foam particles is 0.4 or less. The open cell ratio of the foam particle molded body is 8% to 20%.
[Problem] To provide: a chromatography apparatus and chromatography system that present a uniform chromatography medium and have a robust bed; and a slurry filling method that fills a slurry into said chromatography apparatus. [Solution] The chromatography apparatus has: a housing that contains a fluid inlet and a fluid outlet and has a plurality of side walls that face each other; an inflow frit plate that is disposed within the housing and is configured so as to distribute the flow of a fluid; a chromatography medium that is supported by the housing and is configured to receive, from the inflow frit plate, a fluid to be partitioned; and an outflow frit plate that is disposed within the housing and is configured to receive a fluid that has passed through the chromatography medium. The inlet frit plate, the outflow frit plate, and the plurality of side walls surround the chromatography medium so as to retain the chromatography medium in a prescribed position, and the individual side walls have slurry introduction holes having an opening area that is 0.1% to 10.0% of the area of the single side wall.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING METAL COMPOUND
The present invention provides: a composition for forming a resist underlayer film, the composition having excellent embeddability, while enabling the peripheral edge of a substrate to have good cleansing properties after the formation of a film; a method for producing a semiconductor substrate; a method for forming a resist underlayer film; and a method for producing a metal compound. This composition for forming a resist underlayer film contains a metal compound and a solvent, the metal compound contains a reaction product of a metal amide compound and a carboxylic acid, and a metal atom contained in the metal compound is at least one that is selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, aluminum, gallium, indium, germanium, tin and antimony.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
A porous body including, as a base resin, a crosslinked polymer obtained by crosslinking a polymer of an acrylic monomer and/or a styrene-based monomer. A storage modulus of the porous body is 5 kPa or more and 2000 kPa or less at 23° C., an apparent density of the porous body is 10 kg/m3 or more and 250 kg/m3 or less, and a molecular weight between crosslinking points of the crosslinked polymer is 1.0×104 or more.
C08F 232/06 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocyclique ne contenant pas de cycles condensés contenant plusieurs doubles liaisons carbone-carbone
C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
This radiation-sensitive composition contains: (A) a polymer having a structural unit represented by formula (1); and (B) an onium salt compound which is formed of an organic anion and a cation, in which the organic anion, the cation, or both thereof have an iodo group, and which generates an acid when being irradiated with radiation. In the formula, B1represents a single bond or a divalent organic group that has at least one carbon atom and that binds to E+at the carbon atom. E+represents a divalent group having an ammonium cation structure or a phosphonium cation structure. B2represents a divalent organic group that has at least one carbon atom and that binds to both E+and D-by the same carbon atom or by different carbon atoms. D- represents a monovalent group having an anion structure.
The present invention provides: a method for producing a polyethylene resin foam sheet, the method being capable of producing a good polyethylene resin foam sheet without using an inorganic material or a chemical foaming agent; and a polyethylene resin foam sheet. The present invention relates to a method for producing a polyethylene resin foam sheet by subjecting an expandable resin melt that contains a polyethylene resin and a physical foaming agent to extrusion foaming, wherein: a first means uses, as the physical foaming agent, nitrogen and at least one organic physical foaming agent that is selected from among hydrocarbons having 3 to 5 carbon atoms and dialkyl ethers having an alkyl group with 1 to 3 carbon atoms; the sum (A + B) of the addition amount A of the organic physical foaming agent and the addition amount B of the nitrogen is 0.5 mol to 5 mol per 1 kg of the resin component: the addition amount B of the nitrogen is 0.1 mol to 0.4 mol per 1 kg of the resin component; and the addition amounts are adjusted so that the ratio (A/B) of the addition amount A of the organic physical foaming agent to the addition amount B of the nitrogen is 2 to 18. In addition, a polyethylene resin foam sheet according to the present invention has a density of 20 kg/m3to 100 kg/m3 and an average number of cells in the thickness direction of 0.5 per mm to 5 per mm, the ash content of this foam sheet is less than 0.1% by mass (including 0), and the ratio of sodium in the ash content is 10% by mass or less (including 0).
C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
62.
PHOTOSENSITIVE RESIN COMPOSITION, RESIN FILM HAVING PATTERN, PRODUCTION METHOD FOR SAME, AND SEMICONDUCTOR CIRCUIT BOARD
One aspect of the present invention relates to a photosensitive resin composition, said photosensitive resin composition comprising: (A) an alkali-soluble polymer, (B) a photosensitizer; (C) a crosslinkable compound having a crosslinkable group that, with heat, reacts with the following component (D); (D) a compound represented by general formula (1); and (E) a solvent. [In general formula (1), X11represents a nitrogen atom or the like, R11represents a hydrogen atom or a group represented by general formula (2) (in general formula (2), L21represents a single bond or the like, R21represents a hydrogen atom or the like, R22represents a monovalent organic group, and n21to n23represent integers of 0 or greater), at least one of the three R11is a group represented by general formula (2), and in at least one group represented by general formula (2), n21is an integer of 1 or greater, and at least one R21 is a hydrogen atom.]
Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when a resist pattern having a high aspect ratio is formed; a pattern formation method; and a radiation-sensitive acid generator. The radiation-sensitive resin composition contains an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1, R2and R3are each independently a monovalent chain organic group having 1-10 carbon atoms. R4, R5, and R6are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. When there are a plurality of R4, R5, and R6, the plurality of R4, R5, and R6are the same as or different from each other. Rf1is a fluorine atom or a monovalent fluorinated hydrocarbon group. When there are a plurality of Rf1, the plurality of Rf1122 is an integer of 1-4. Z+ is a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed in formation of a resist pattern having a high aspect ratio; a pattern formation method; and a radiation-sensitive acid-generating agent. This radiation-sensitive resin composition contains: an onium salt compound (1) expressed by formula (1); an onium salt compound (2) that is different from the aforementioned onium salt compound (1); a resin that includes structural units having acid-dissociable groups; and a solvent. (In formula (1), W represents a C1-40 monovalent chain-form organic group, a C5 or lower monovalent cyclic organic group, or a monovalent group obtained by combining a C1-40 monovalent chain-form organic group and a C5 or lower monovalent cyclic organic group. R1and R2each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. In cases in which a plurality of R1and R2are present, the plurality of Rf1and Rf2may be the same as, or different from, each other. R3, R4, and R511 is an integer of 1 to 8. Z+ is a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; a pattern formation method; and a radiation-sensitive acid generator. This radiation-sensitive resin composition comprises: an onium salt compound represented by formula (1); a resin containing a structural unit (I) represented by formula (2); and a solvent. (In formula (1), R1, R2and R3each independently represent a monovalent organic group having 1 to 10 carbon atoms, or two or three of R1, R2and R3are combined with each other to form, together with a carbon atoms to which these residues are bound, a monovalent or bivalent group containing a cyclic structure having 3 to 20 carbon atoms, in which when two of R1, R2and R3form the above-mentioned cyclic structure, the remaining one is an organic group having 1 to 10 carbon atoms; R4and R5each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group, in which when there are a plurality of R4's and R5's, the plurality of R4's and R5's are the same as or different from each other; R6, R7and R811 represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R9represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; and R10 represents a monovalent group containing at least one structure selected from the group consisting of a lactone structure, a cyclic polycarbonate structure and a sultone structure.)
A composition includes a metal compound, a polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2), and a solvent. R1 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R2 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R3 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L is a single bond or a divalent linking group; Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring members; R4 is a monovalent hydroxyalkyl group having 1 to 10 carbon atoms or a hydroxy group; and n is an integer of 0 to 8.
A composition includes a metal compound, a polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2), and a solvent. R1 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R2 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R3 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L is a single bond or a divalent linking group; Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring members; R4 is a monovalent hydroxyalkyl group having 1 to 10 carbon atoms or a hydroxy group; and n is an integer of 0 to 8.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method is provided for evaluating excretion of a substance of interest by a human hepatocyte-like cell, the method including: preparing a sac-like-material-containing solution that contains a sac-like material which is produced in vitro and has a membrane of a human hepatocyte-like cell and 0% to 10% by volume of a suspended extracellular matrix; placing the substance of interest in the sac-like-material-containing solution to bring the substance of interest into contact with the sac-like material; and extracting the sac-like material from the sac-like-material-containing solution and measuring a concentration of the substance of interest or a metabolite thereof excreted into an inner cavity of the sac-like material.
G01N 33/50 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique
C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
68.
PROTEIN COLLECTION DETERMINATION SYSTEM, PROTEIN COLLECTION DETERMINATION METHOD, AND RECORDING MEDIUM
MEDICAL & BIOLOGICAL LABORATORIES CO., LTD. (Japon)
Inventeur(s)
Suemasa Daichi
Abrégé
This protein collection determination system comprises: a first determination unit that uses first image data obtained by capturing a time series of images of a culture of a cell population infected with a virus as first input data and determines, as first output data, whether a cell population infected with a virus is in a suitable state for collecting a protein; and an acquisition unit that acquires image data obtained by capturing a time series of images of the inside of a culture container. The first determination unit performs determination by means of a first model, and the first model is a trained model obtained by performing deep learning of a first neural network using the actual values of the first input data and the actual values of the first output data as first teacher data.
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
A method for producing a chromatography carrier, including providing a solid phase support, where the solid phase support provided is formed of porous particles on which a ligand has or has not been immobilized, and subjecting the solid phase support to sieve classification. A coefficient of variation of a volume particle size distribution of the porous particles when a ligand has been immobilized is adjusted to 1% to 22%, and a ratio (d1/d50) of volume cumulative 1% particle size d1 to volume cumulative 50% particle size d50 in terms of the porous particles is adjusted to 0.55 to 1.0.
B01J 20/286 - Phases reliées chimiquement à un substrat, p.ex. à de la silice ou à des polymères
B01D 15/20 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives au conditionnement de la matière adsorbante ou absorbante
B01D 15/38 - Adsorption sélective, p.ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction spécifique non couverte par un ou plusieurs des groupes , p.ex. chromatographie d'affinité, chromatographie d'échange par ligand ou chromatographie chirale
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
A method for producing a polyamide-based resin expanded bead, the method comprising expanding a polyamide-based resin bead using a physical blowing agent, wherein the polyamide-based resin bead comprises a coloring pigment and a higher fatty acid metal salt having 12 to 24 carbon atoms; a metal in the higher fatty acid metal salt is one or more metals selected from the group consisting of magnesium, aluminum, and zinc; and a content of the higher fatty acid metal salt in the polyamide-based resin bead is 500 to 5000 mass ppm.
Provided are: a radioactive-ray-sensitive resin composition which makes it possible to form a resist film having satisfactory storage stability and also having excellent sensitivity and LWR performance even when a next-generation technology is applied; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises: a radioactive-ray-sensitive onium salt having a cation moiety containing a fluorine atom; a carboxylic acid having a standard boiling point of 90°C to 220°C and having no aromatic ring, or an alcohol having a standard boiling point of 60°C or lower, or both of the carboxylic acid and the alcohol; a resin containing a structural unit having an acid-dissociable group; and a solvent.
Provided are a radiation sensitive resin composition and a pattern formation method that can form a resist film that has excellent preservation stability and has excellent CDU performance and sensitivity when applied to a next-generation technology. This radiation sensitive resin composition comprises: a radiation sensitive onium salt (A) represented by formula (1) (in the formula (1), Rp1pp11 +represents a monovalent radiation sensitive onium cation); a radiation sensitive onium salt (B) that is different from the radiation sensitive onium salt (A) and that is represented by formula (2) (in the formula (2), Rp222 +11 +22 + is a cation including a fluorine atom.
A polypropylene-based resin expanded beads configured to include an NOR type hindered amine and has a surface on which a thermoplastic polymer layer is located, in which a blending ratio of the amine in the expanded beads is 0.03 wt % or more and 0.5 wt % or less, and a blending ratio of the amine in the thermoplastic polymer layer is less than the blending ratio of the amine in the expanded beads. Further, the method for producing the expanded beads includes a covering and foaming step, in which in the resin beads to be obtained in the covering step, a blending ratio of the amine in the resin beads is adjusted to be 0.03 wt % or more and 0.5 wt % or less, and a blending ratio of the amine in a thermoplastic polymer layer is adjusted to be lower than the blending ratio of the amine in the resin beads.
The present invention pertains to a radiation curable composition which is for forming an optical fiber primary coat layer, and which is capable of forming a cured product having excellent flexibility and adequate mechanical strength. More specifically, the present invention pertains to a radiation curable composition which is for forming an optical fiber primary coat layer, and which comprises: (A) a urethane (meth)acrylate that is obtained by reacting at least (a) a polyether diol having a number average molecular weight of 2000-5000, (b) a diisocyanate compound, (c) a hydroxyl-containing (meth)acrylate compound, and (d) a diol having a molecular weight of 500 or less; (B) a (meth)acrylate compound other than component (A); and (C) a radiation polymerization initiator.
C08G 18/67 - Composés non saturés contenant un hydrogène actif
C09D 4/00 - Compositions de revêtement, p.ex. peintures, vernis ou vernis-laques, à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable
Disclosed is a curable composition for organic EL elements, the curable composition containing (A) a polymer that comprises a structural unit derived from a compound having an acidic group, and (B) a photosensitive compound, wherein: the polymer (A) comprises a structural unit (I) that is derived from an aromatic vinyl compound and a structural unit (II) that is derived from a maleimide compound, while containing, as the compound having an acidic group, at least one compound that is selected from the group consisting of an aromatic vinyl compound and a maleimide compound; and the ratio of the sum of the structural unit (I) and the structural unit (II) in the polymer (A) is 70% by mole or more relative to all structural units in the polymer (A).
A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2).
A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2).
C07C 309/10 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy éthérifiés liés au squelette carboné avec l'atome d'oxygène d'au moins un des groupes hydroxy éthérifiés lié de plus à un atome de carbone acyclique
C07C 309/39 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des atomes d'halogène liés au squelette carboné
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).
A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106.
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106.
RO(CH2)2O(CH2)2OH (1)
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106.
RO(CH2)2O(CH2)2OH (1)
ROH (2)
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106.
RO(CH2)2O(CH2)2OH (1)
ROH (2)
(In the formula (1) and the formula (2), R's represent the same hydrocarbon group.)
A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),
A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),
where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104.
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104.
R2N(OH) (1)
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104.
R2N(OH) (1)
R2NH (2)
(In the formula (1) and the formula (2), R's each independently represent an alkyl group having 1 to 4 carbon atoms.)
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
Produits et services
Unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed synthetic resins; thermally curable unprocessed synthetic resins; thermoplastic resins, unprocessed; unprocessed artificial resins for use in manufacture; chemical coatings used in the manufacture of printed circuit boards; chemicals for use in industry; synthetic resin adhesives for industrial purposes; contact adhesives for use with laminates; adhesives for industrial purposes. Semi-processed synthetic resins; semi-processed thermoplastic polymer resins for use in manufacture; semi-processed plastic substances made of thermally curable resins; semi-processed plastics.
A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/029 - Composés inorganiques; Composés d'onium; Composés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
Provided are a radioactive-ray-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has satisfactory storage stability, and also has excellent sensitivity and LWR performance when next-generation technology is applied. The radioactive-ray-sensitive resin composition comprises at least one onium salt having an organic acid anion moiety and an onium cation moiety, a resin containing a structural unit having an acid dissociable group, and a solvent, in which at least a part of the onium cation moiety in the onium salt is a fluorinated onium cation moiety containing a fluorine atom, and at least a part of the organic acid anion moiety in the onium salt is an organic acid anion moiety (1) represented by formula (1). (In formula (1), R1represents an organic group having a valency of (q2+1) or, when there are a plurality of R1's, two of the R1's are bonded to each other to form a 5- to 20-membered cyclic structure in conjunction with a carbon atom bonded to them and located on a benzene ring in formula (1); R2represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, a cyano group, a nitro group or an amino group; q1 represents an integer of 1 to 4; when q1 is 2 or more, a plurality of R1's are the same as or different from each other; when q1 is 1, q2 represents an integer of 1 to 4; when q1 is 2 or more, a plurality of q2's each independently represent an integer of 0 to 4, in which at least one of q2's is 1 or more; q3 represents an integer of 0 to 3; when q3 is 2 or more, a plurality of R2's are same as or different from each other; and q1 and q3 satisfy the formula q1+q3 ≤ 4.)
C07C 65/105 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes hydroxyle ou O-métal polycycliques
C07C 65/24 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes polycycliques
C07C 65/28 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes avec des insaturations autres que celles des cycles aromatiques
C07C 233/87 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des groupes carboxyle avec le radical hydrocarboné substitué lié à l'atome d'azote du groupe carboxamide par un atome de carbone acyclique d'un squelette carboné contenant des cycles aromatiques à six chaînons
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a composition which is capable of forming a film that has excellent bending resistance and excellent solubility during liquid discharging; and a composition. The present invention provides a method for producing a semiconductor substrate, the method comprising a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is directly or indirectly formed on the resist underlayer film that has been formed by the application step, and a step in which etching is performed using the resist pattern as a mask, wherein: the resist underlayer film forming composition contains a solvent and a compound having a nitro group; the compound having a nitro group is a polymer having a repeating unit that comprises a nitro group and an aromatic ring, an aromatic ring-containing compound having a nitro group and a molecular weight of 600 to 3,000, or a combination thereof; the content ratio of the compound having a nitro group in the components of the resist underlayer film forming composition excluding the solvent is 10% by mass or more.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
86.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER
A radiation-sensitive composition comprising a polymer having: a side chain including an acid-dissociable group; and a side chain including one or more radiation-sensitive onium cation structures and two or more iodo groups.
A method for producing a molded article of expanded beads includes filling tubular polypropylene-based resin expanded beads each having a through-hole in a mold, and supplying a heating medium to fusion-bond the expanded beads to each other. The expanded beads have a foamed layer constituted by polypropylene-based resin. A closed cell of the expanded beads is 90% or more. An average hole diameter (d) of through-holes of the expanded beads is less than 1 mm. A ratio [d/D] of the average hole diameter (d) to an average outer diameter (D) of the expanded beads is 0.4 or less. An open cell content of the molded article of expanded beads is 2.5% or more and 12% or less.
A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X].
A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X].
A chromatography carrier may exhibit high liquid permeability and an excellent pressure-resistant characteristic during liquid passage. A chromatography carrier production method may include: (1) providing a solid phase support, the solid phase support being formed of porous particles on which a ligand has or has not been immobilized; and (2) subjecting the solid phase support to sieve classification, the coefficient of variation of the volume particle size distribution of the porous particles when a ligand has been immobilized being adjusted to 1% to 22%. The skewness of the volume particle size distribution of the porous particles when a ligand has been immobilized may be adjusted to −0.1 to 5.
B01J 20/285 - Absorbants ou adsorbants poreux à base de polymères
B01D 15/20 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives au conditionnement de la matière adsorbante ou absorbante
B01D 15/22 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à la structure de la colonne
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
91.
PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING RESIST PATTERN FILM, AND METHOD FOR MANUFACTURING PLATED SHAPED ARTICLE
An embodiment of the present invention relates to a photosensitive resin composition, a method for manufacturing a resist pattern film, and a method for manufacturing a plated shaped article; the photosensitive resin composition comprises (A) an alkali-soluble resin, (B1) a polymerizable compound having at least two (meth)acryloyl groups and at least two hydroxy groups in one molecule and having a ring structure, (C) a photoradical polymerization initiator, (D) at least one compound selected from the group consisting of a nitrogen-containing heterocyclic compound (d1) containing two or more nitrogen atoms, a thiol compound (d2), and a polymerization inhibitor (d3), and (F) a solvent.
Polypropylene-based resin foamed particles (1) each include a foamed layer formed of a polypropylene-based resin composition. The polypropylene-based resin composition forming the foamed layer contains a polypropylene-based resin and rubbery bodies (G) containing an ethylene propylene-based rubber. The rubbery bodies are dispersed in the polypropylene-based resin. The foamed particles (1) have a melting point Tm of 130-162°C.
A core member used for a laminate in which polyurethane foam is laminated on the core member made of a thermoplastic resin expanded beads molded article, such that the molded article in which expanded beads having through holes are mutually fused, an average porosity of the expanded beads molded article is between 10% and 25%, and on a surface of the expanded beads molded article, a ratio of a total opening area of the through hole portions of the expanded beads to a surface area of the expanded beads molded article is between 2% and 5%, an average opening area of the through hole portions of the expanded beads is between 5 mm2 and 20 mm2, and the ratio of the number of through hole portions having an opening area of 2 mm2 or more to the number of through hole portions of the expanded beads is 60% or less.
B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
B32B 27/40 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyuréthanes
The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition which is capable of forming a film that has excellent bending resistance; a composition; and a polymer. This method for producing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on the resist underlayer film that has been formed in the application step; and a step for performing etching using the resist pattern as a mask. With respect to this method for producing a semiconductor substrate, the resist underlayer film-forming composition contains a solvent and a polymer that has a structural unit represented by formula (1). (In formula (1), Ar1represents a divalent group that has an aromatic ring having 5 to 40 ring members; and X1represents a divalent group represented by formula (i).) (In formula (i), R1and R2 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, or these groups combine with each other to form a C3-20 divalent alicyclic hydrocarbon group together with the carbon atom to which these are bonded; and * and ** each denote a bonding hand in formula (1).)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C08G 8/02 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols de cétones
The purpose of the present invention is to provide a method for forming a resist pattern having excellent pattern rectangularity. Provided is a method for forming a resist pattern, the method comprising: a step for applying a resist underlayer film-forming composition onto a substrate directly or indirectly; a step for forming a metal-containing resist film on the resist underlayer film formed by the resist underlayer film-forming composition application step; a step for exposing the metal-containing resist film to light; a step for preparing a developer solution; and a step for dissolving a light-exposed part in the metal-containing resist film that has been exposed to light using the developer solution to form a resist pattern.
C08F 232/08 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocyclique contenant des cycles condensés
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided are: a resist underlayer film-forming composition which enables the formation of a resist underlayer film having excellent resist pattern rectangularity when the composition is exposed to extreme ultraviolet ray; and a method for manufacturing a semiconductor substrate using the composition. The resist underlayer film-forming composition is a composition for forming an underlayer film for a resist film which is subjected to the exposure to extreme ultraviolet ray, the composition comprising a compound having a iodine atom and a solvent, in which the compound having a iodine atom is a polymer having a repeating unit represented by formula (1), an aromatic-ring-containing compound having a iodine atom and having a molecular weight of 750 to 3000 inclusive, or a combination thereof, and the content ratio of the compound having a iodine atom in components other than the solvent in the underlayer film-forming composition is 50% by mass or more. (In formula (1), Ar1represents a bivalent group having a 5- to 40-membered aromatic ring; R0represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; and R1represents a monovalent organic group having 1 to 40 carbon atoms; in which at least one of Ar1, R0and R1 has a iodine atom.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided is a vector or vector set for analyzing the function of a functional molecule, said vector or vector set comprising: a polynucleotide that codes for an expression system of a candidate molecule for the functional molecule; a polynucleotide that codes for a translation control sequence or a transcription control sequence which is activated by a response in a given cell; and a polynucleotide that codes for a reporter system which is operably linked with the translation control sequence or the transcription control sequence. Also provided is a searching method for a functional molecule which causes a response in a cell, said method comprising: introducing the vector or vector set into a cell; and measuring expression in the cell of a reporter system included in the vector or vector set.
C12N 15/63 - Introduction de matériel génétique étranger utilisant des vecteurs; Vecteurs; Utilisation d'hôtes pour ceux-ci; Régulation de l'expression
A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.
Provided are an antibacterial composition containing bacteria that exhibit antibacterial properties against bacteria having a positive correlation with a SCORAD value indicating the severity of atopic dermatitis, and a method for determining the administration of said antibacterial composition to a subject. The present invention comprises an antibacterial composition that contains resident skin bacteria as an active ingredient, the antibacterial composition acting against pro-inflammatory bacteria (excluding the resident skin bacteria).
A61P 17/00 - Médicaments pour le traitement des troubles dermatologiques
C12Q 1/689 - Produits d’acides nucléiques utilisés dans l’analyse d’acides nucléiques, p.ex. amorces ou sondes pour la détection ou l’identification d’organismes pour les bactéries
100.
RADIATION-SENSITIVE COMPOSITION, RESIST-PATTERN-FORMING METHOD, RADIATION-SENSITIVE ACID GENERATOR AND POLYMER
This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), R5is a group obtained by removing (m+n+2) hydrogen atoms from a monocyclic or condensed aromatic hydrocarbon ring having r carbon atoms. L−33 −or –COO−. r is an integer of 6 to 14. A1is a single bond, –O–, –S– or –NR3–. R1is a hydrogen atom or a monovalent organic group. X1is a chlorine atom, a bromine atom or an iodine atom. m is an integer of 1 to (r–2). N is an integer of 0 to (r–3). R2is a substituted or unsubstituted monovalent hydrocarbon. M+ is a monovalent cation.
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/12 - Esters des alcools ou des phénols monohydriques
