The present invention provides a radiation sensitive resin composition, a pattern forming method, etc., capable of achieving, at sufficient levels, sensitivity, LWR performance, and process window when next-generation technology is applied. This radiation sensitive resin composition comprises a resin that includes a repeating unit A having an acid dissociable group, an onium salt that has an organic acid anion moiety and an onium cation moiety, and a solvent, wherein the onium salt includes at least one group selected from the group consisting of a pentafluorosulfanyl group, a pentafluorosulfanyloxy group, and a pentafluorosulfanylthio group.
A polyolefin-based resin expanded bead contains a base resin containing a polyolefin-based resin as a main component, carbon black, and a flame-retardant. A bulk density of the polyolefin-based resin expanded beads is 10 to 100 kg/m3. A blending amount of the carbon black is 0.5 to 10 parts by mass based on 100 parts by mass of the base resin. The flame-retardant contains a hindered amine-based compound represented by the following general formula (I), and a blending amount of the hindered amine-based compound is 0.01 to 1 parts by mass based on 100 parts by mass of the base resin.
A polyolefin-based resin expanded bead contains a base resin containing a polyolefin-based resin as a main component, carbon black, and a flame-retardant. A bulk density of the polyolefin-based resin expanded beads is 10 to 100 kg/m3. A blending amount of the carbon black is 0.5 to 10 parts by mass based on 100 parts by mass of the base resin. The flame-retardant contains a hindered amine-based compound represented by the following general formula (I), and a blending amount of the hindered amine-based compound is 0.01 to 1 parts by mass based on 100 parts by mass of the base resin.
Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3).
Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3).
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).
A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).
G03F 7/38 - Traitement avant le dépouillement selon l'image, p.ex. préchauffage
G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
C07C 309/24 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné contenant des cycles aromatiques à six chaînons
C07C 309/06 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'halogène ou des groupes nitro ou nitroso liés au squelette carboné
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/19 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné saturé contenant des cycles
C07C 303/32 - Préparation d'esters ou d'amides d'acides sulfuriques; Préparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides de sels d'acides sulfoniques
G03F 7/30 - Dépouillement selon l'image utilisant des moyens liquides
5.
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Provided are a radiation-sensitive resin composition and a pattern formation method by which sensitivity, critical dimension uniformity (CDU) performance, and development residue performance can be exhibited on a sufficient level when next-generation technology is applied. The radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit A having an acid-dissociable group, and a structural unit D having a phenolic hydroxy group; and a solvent. The structural unit D has a phenolic hydroxy group and an alkyl group on the same aromatic ring, and in the aromatic ring of the structural unit D, the alkyl group is bonded to a carbon atom adjacent to the carbon atom to which the phenolic hydroxy group is bonded. The radiation-sensitive resin composition further satisfies at least one condition selected from the group consisting of the following conditions 1 and 2. Condition 1: The resin is a radiation-sensitive acid-generating resin further including a structural unit B including an organic acid anion moiety, and an onium cation moiety including an aromatic ring structure having a fluorine atom. Condition 2: An onium salt (excluding the radiation-sensitive acid-generating resin) including an organic acid anion moiety and an onium cation including an aromatic ring structure having a fluorine atom is further provided.
Provided are a method for producing a semiconductor substrate and a silicon-containing composition which are capable of forming a silicon-containing film with good resist pattern collapse suppression properties and good film thickness uniformity. This method involves a step for directly or indirectly coating a substrate with a silicon-containing composition, a step for coating, with a resist film forming composition, the silicon-containing film formed in the silicon-containing composition coating step, an exposure step for irradiating, with radioactive rays, the resist film formed in the resist film forming composition coating step, and a step for at least developing the exposed resist film, wherein the silicon-containing composition contains a silicon-containing compound, a polymer having a structural unit represented by formula (1) below, and a solvent, and the content ratio of the silicon-containing compound accounting for components other than the solvent in the silicon-containing composition is 50%-99.9% by mass. (In formula (1), RA1represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. RA2 is a monovalent organic group having 1-20 carbon atoms.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
7.
SILICON-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.
A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).
A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
G03F 7/38 - Traitement avant le dépouillement selon l'image, p.ex. préchauffage
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japon)
Inventeur(s)
Sato, Kazuhide
Yukawa, Hiroshi
Matsuoka, Kohei
Ueya, Yuuichi
Shimada, Mibuko
Ono, Kenichiro
Abrégé
Provided is a drug useful for photoimmunotherapy. Specifically, provided is a conjugate including an antibody molecule, a particle having an average particle diameter of 100 nm or less, and a photosensitive portion. In the conjugate, the particle having an average particle diameter of 100 nm or less is linked to the antibody molecule, and at least one of the antibody molecule or the particle is bound to the photosensitive portion. The photosensitive portion is a portion showing increase of hydrophobicity when irradiated with a light beam having a wavelength of from 500 nm to 900 nm or a portion containing a phthalocyanine skeleton.
A61K 47/68 - Préparations médicinales caractérisées par les ingrédients non actifs utilisés, p.ex. les supports ou les additifs inertes; Agents de ciblage ou de modification chimiquement liés à l’ingrédient actif l’ingrédient non actif étant chimiquement lié à l’ingrédient actif, p.ex. conjugués polymère-médicament l’ingrédient non actif étant un agent de modification l’agent de modification étant un anticorps, une immunoglobuline ou son fragment, p.ex. un fragment Fc
A61K 41/00 - Préparations médicinales obtenues par traitement de substances par énergie ondulatoire ou par rayonnement corpusculaire
A61K 49/18 - Préparations de contraste pour la résonance magnétique nucléaire (RMN); Préparations de contraste pour l'imagerie par résonance magnétique (IRM) caractérisées par un aspect physique particulier, p.ex. émulsions, microcapsules, liposomes
10.
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND
Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C07C 13/547 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à trois cycles condensés un cycle au moins n'étant pas un cycle à six chaînons, les autres cycles étant au plus des cycles à six chaînons
C07C 33/36 - Alcools polyhydroxyliques contenant des cycles aromatiques à six chaînons et d'autres cycles
C07C 39/17 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques sans autre insaturation que celle des cycles aromatiques contenant d'autres cycles en plus des cycles aromatiques à six chaînons
C07C 39/23 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques contenant des cycles aromatiques à six chaînons et d'autres cycles avec une insaturation autre que celle des cycles aromatiques
C07C 43/215 - Ethers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons avec une insaturation autre que celle des cycles aromatiques à six chaînons
C07D 207/335 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
C07D 333/18 - Radicaux substitués par des hétéro-atomes, autres que les halogènes, liés par des liaisons simples par des atomes de soufre
The present invention provides: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition that is capable of forming a resist underlayer film having excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a repeating unit (1) which comprises an organic sulfonic acid anion moiety and an onium cation moiety.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
12.
RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
This radiation-sensitive resin composition comprises a first polymer and a compound. The first polymer has a first structural unit that contains a substructure in which a hydrogen atom in a carboxy group, phenolic hydroxyl group, or amide group is substituted by a group with formula (1); has a second structural unit that contains a phenolic hydroxyl group; and has a solubility in developer that is modified by the action of acid. The compound has a monovalent organic acid anion and a monovalent radiation-sensitive onium cation that contains an aromatic ring in which at least one hydrogen atom is substituted by a fluorine atom or a fluorine atom-containing group.
The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. The present invention also provides: a composition for chemical mechanical polishing, the composition being capable of polishing a silicon oxide film at a high polishing rate, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. A method for producing abrasive grains according to the present invention comprises a step in which particles each having a surface to which a hydroxyl group (-OH) is immobilized via a covalent bond, an alkoxysilane having an epoxy group, and a basic compound are mixed and heated.
This radiation-sensitive composition contains a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), A1represents a (m+n+2)-valent aromatic ring group. In formula (1), "-OH" and "-COO-" are bound to the same benzene ring in A1. An atom to which "-OH" is bound is located adjacent to an atom to which "-COO-" is bound. R1represents a monovalent group having a cyclic(thio)acetal structure. M+ represents a monovalent organic cation.
A liquid crystal display device includes: a substrate; a plurality of vertical organic light-emitting transistors; a data line that supplies a voltage to a gate electrode of the vertical organic light-emitting transistor; a thin-film transistor that is connected between the gate electrode of each of the vertical organic light-emitting transistors and the data line and controls supply of the voltage to the gate electrode of the vertical organic light-emitting transistor; a gate line that is connected to the gate electrode of the thin-film transistor and transmits a signal for switching the thin-film transistor; and a plurality of current supply lines that are wired in a first direction outside a formation region of the vertical organic light-emitting transistor, the current supply lines being in contact with a source electrode of the vertical organic light-emitting transistor to supply a current to the vertical organic light-emitting transistor.
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
H10K 50/30 - Transistors organiques émetteurs de lumière
H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
Expanded beads comprising a linear low density polyethylene as a base resin, wherein: the linear low density polyethylene has a biomass degree of 40% or more as measured by ASTM D 6866; in a DSC curve obtained by heating from 23°C to 200°C at a heating rate of 10°C/min, the expanded beads have a crystal structure in which are present a melting peak (intrinsic peak) unique to the linear low density polyethylene, and one or more melting peaks (high temperature peaks) on a higher temperature side than the intrinsic peak; the total heat of fusion of the expanded beads is at least 70 J/g and at most 100 J/g; and the heat of fusion at the high temperature peak is at least 10 J/g and at most 50 J/g.
C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
17.
EXPANDED BEAD PRODUCTION METHOD, AND EXPANDED BEADS
A method for producing expanded beads having a bulk density of 10-240 kg/m3, the method expanding resin beads having, as the base resin, a mixed resin from at least two linear low density polyethylenes. The mixed resin contains a polyethylene A having a biomass degree of at least 50% and a melt flow rate (MFR) of 0.1-3 g/10min, and a polyethylene B. The difference between the MFR of A and the MFR of B is 0-2 g/10min, the mass ratio of A and B is 5/95-95/5, and the biomass degree of the mixed resin is 5% or more. In a DSC curve, the expanded beads have a crystal structure in which are present melting peaks unique to the linear low density polyethylenes and a high-temperature peak on the high-temperature side thereof, the heat of fusion at the high-temperature peak being 10-50 J/g.
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
18.
METHOD FOR PRODUCING FOAMABLE POLYAMIDE-BASED RESIN PARTICLES, METHOD FOR PRODUCING POLYAMIDE-BASED RESIN FOAMED PARTICLES, AND POLYAMIDE-BASED RESIN FOAMED PARTICLES
A method for producing foamable polyamide-based resin particles according to the present invention includes impregnating polyamide-based resin particles with an inorganic physical foaming agent in a gas phase, wherein the polyamide-based resin particles have a water content of at least 2.5 mass% and contain 0.5-10 mass% of carbon black. The foamable polyamide-based resin particles are obtained by heating and foaming foamable polyamide resin particles.
The present invention causes a radiation-sensitive composition to contain a polymer including acid-labile group and a compound (Q) given by formula (1). In formula (1), L1represents an ester group, -CO-NR3-, a (thio) ether group, or a sulfonyl group. L2 represents a single bond or a divalent linking group.
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
C07C 309/27 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes carboxyle liés au squelette carboné
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
The present invention provides a method for producing a geopolymer foam, wherein: a reaction slurry that contains an aluminosilicate, an alkali metal silicate, aggregate and water is obtained; an expandable slurry is formed by adding a foaming agent to the reaction slurry; and a geopolymer foam is produced by heating the expandable slurry. This method for producing a geopolymer foam is characterized in that: mica which has an average particle diameter of 50-500 µm and a volume ratio (X) of particles having a particle diameter of 10 µm or less of 3% or less is used as the aggregate; and the reaction slurry has a viscosity of 3,000-15,000 Pa∙s at 23°C.
C04B 20/00 - Emploi de matières comme charges pour mortiers, béton ou pierre artificielle prévu dans plus d'un groupe et caractérisées par la forme ou la répartition des grains; Traitement de matières spécialement adapté pour renforcer leur propriétés de charge dans les mortiers, béton ou pierre artificielle prévu dans plus d'un groupe de ; Matières expansées ou défibrillées
C04B 38/02 - Mortiers, béton, pierre artificielle ou articles de céramiques poreux; Leur préparation par addition d'agents chimiques gonflants
21.
METHOD FOR PRODUCING THERMOPLASTIC RESIN FOAM PARTICLE MOLDED BODY
A method for producing a thermoplastic resin foam particle molded body according to the present invention comprises a crack filling step and an in-mold molding step. Foam particles (2) to be used in the crack filling step have a columnar shape, while having one or more defective parts of one or more kinds, the defective parts being selected from the group consisting of through holes and grooves. In cut surfaces of the foam particles (2) obtained by cutting each foam particle (2) by a plane that is perpendicular to the axial direction of the foam particle (2) at the center of the axial direction, the ratio Ca/A of the average cross-sectional area Ca of one defective part to the average cross-sectional area A of the foam particles (2) is 0.01 to 0.20, and the ratio Ct/A of the total cross-sectional area Ct of the defective parts to the average cross-sectional area A of the foam particles (2) is 0.02 to 0.20. The filling rate F of the foam particles (2) in a state where a mold (1) is completely closed is 125% to 220%.
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse
22.
PRODUCTION METHOD FOR THERMOPLASTIC RESIN FOAMED PARTICLE MOLDED BODY
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/54 - Alimentation en matière à mouler dans une cavité de moulage ouverte ou sur une surface mobile, c.à d. pour la fabrication d'objets de longueur indéfinie sous forme de particules ou de grains expansibles
C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse
23.
PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE
The present invention provides a photosensitive resin composition which contains a polymer (A) that has an acid-cleavable group, a photoacid generator (B) and a solvent (C), wherein: the polymer (A) comprises a structural unit (I) that is represented by formula (1) and a structural unit (III) that has a glass transition temperature Tg of 50°C or less in the form of a homopolymer; and the photoacid generator (B) is a compound which generates an acid that has a van der Waals volume of 200 Å3or more when irradiated with active light or radiation. The present invention also provides: a method for forming a resist pattern film, the method using this photosensitive resin composition; and a method for producing a plated shaped article. The details of R1A and L in formula (1) are as described in the description.
A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.
A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.
C08F 220/16 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone
G03F 7/30 - Dépouillement selon l'image utilisant des moyens liquides
C08F 212/00 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un noyau carbocyclique aromatique
25.
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a pattern formation method. A radiation-sensitive resin composition containing: a radiation-sensitive acid generating resin comprising a repeating unit A having an acid-dissociable group represented by the following formula (1) and a repeating unit B including an organic acid anion moiety and a sulfonium cation moiety containing an aromatic ring structure having a fluorine atom; and a solvent; in the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RX is a monovalent hydrocarbon group having 2 to 20 carbon atoms; and Cy represents an alicyclic structure having 3 to 20 ring members and formed together with a carbon atom to which this is bonded.
Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a pattern formation method. A radiation-sensitive resin composition containing: a radiation-sensitive acid generating resin comprising a repeating unit A having an acid-dissociable group represented by the following formula (1) and a repeating unit B including an organic acid anion moiety and a sulfonium cation moiety containing an aromatic ring structure having a fluorine atom; and a solvent; in the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RX is a monovalent hydrocarbon group having 2 to 20 carbon atoms; and Cy represents an alicyclic structure having 3 to 20 ring members and formed together with a carbon atom to which this is bonded.
The purpose of the present invention is to provide: a semiconductor substrate production method using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. This semiconductor substrate production method includes a step in which a resist underlayer film-forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is formed directly or indirectly on the resist underlayer film formed in the application step, and a step in which etching is performed using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound including a boron atom.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage
A radiation-sensitive composition contains: (A) a polymer; and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing four or more iodine atoms.
A radiation-sensitive composition contains: (A) a polymer including a structural unit (U) represented in formula (1); and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing an iodine atom. In formula (1), R1is a hydrogen atom, a methyl group, or the like. X1is a single bond, an ether bond, an ester bond, or the like. Ar1is a cyclic group bonded to X1via an aromatic ring. A hydroxyl group or a –ORYgroup is bonded to the atom adjacent to the atom bonded to X1among the atoms constituting the aromatic ring in Ar1. RY is an acid-dissociable group.
[Problem] The present invention addresses the problem of providing: a photosensitive resin composition which has excellent volatility regarding a solvent therein and from which it is possible to produce a resist coating film in which the generation of coating bubbles is sufficiently suppressed; a method for producing a resist pattern film using the photosensitive resin composition; and a method for producing a plated shaped article using the resist pattern film. [Solution] A photosensitive resin composition characterized by comprising: a polymer (A) that has a structural unit having a phenolic hydroxyl group and a structural unit derived from a (meth)acrylate having an acid-dissociable group; a specific photoacid generator (B); and an organic solvent (C) that contains 3-ethoxyethyl propionate, wherein the solid content concentration is 30 mass% or more.
This radiation-sensitive resin composition contains a polymer which has a first structural unit represented by the following formula (1) and of which the solubility in a developer changes under the action of an acid, and a compound represented by the following formula (2).
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
Provided are a radiation-sensitive resin composition that has suitable storage stability and makes it possible to form a resist film with excellent sensitivity, LWR performance, water repellency, and development defect-suppressing performance, and a pattern formation method. The radiation-sensitive resin composition contains: a first resin including a structural unit (I) represented by formula (1), a structural unit (II) represented by formula (2) (excluding the structural unit represented by formula (1)), and a structural unit (III) having an acid-cleavable group; and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L1is an alkanediyl group having 1-5 carbon atoms. Rf1is a monovalent fluorinated hydrocarbon group having 2-10 carbon atoms and 5-7 fluorine atoms. In formula (2), RK2is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Lfis a fluorine-substituted or unsubstituted divalent organic group having 1-20 carbon atoms. L2is *-COO- or *-OCO-. * is a bond on the Lfside. p is an integer of 0-2. When a plurality of Lfand L2are present, the plurality of Lfand L2may be the same or different from each other. Rf2is a fluorine-substituted or unsubstituted monovalent organic group having 1-20 carbon atoms. Lfand Rf2 have a total of one or more fluorine atoms.)
Provided are a radiation-sensitive resin composition capable of forming a resist film with excellent sensitivity, LWR performance, water repellency, and suppression of development flaws, and having good storage stability; and a pattern forming method. A radiation-sensitive resin composition comprising a polymer comprising structural units (I) represented by formula (1) and structural units differing from said structural units (I); an onium salt represented by formula (i); and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or trifluoromethyl group. L1is a 1-5 carbon alkanediyl group. Rf1is a 2-10 carbon fluorinated hydrocarbon group with 5-7 fluorine atoms.) (In formula (i), Ra1is a substituted or unsubstituted 1-40 carbon monovalent organic group in which the atom adjacent to the sulfur atom is not bound to a fluorine atom or fluorinated hydrocarbon group. X+ is a monovalent onium cation.)
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A method of culturing human induced pluripotent stem cells includes inoculating human induced pluripotent stem cells in a culture medium at an inoculation density of 1.0×104 to 1.0×106 cells/cm2 in a culture vessel and subjecting the human induced pluripotent stem cells to two-dimensional culturing. A method of producing cerebral organoids includes culturing a culture of the human induced pluripotent stem cells obtained by the method of culturing human induced pluripotent stem cells in a culture medium containing a BMP inhibitor and a transforming growth factor β (TGFβ) inhibitor to form cell aggregates, culturing the cell aggregates in a culture medium containing a Wnt signal transduction pathway potentiator and an extracellular matrix, and subjecting the culturing obtained in the culturing the cell aggregates to spinner culturing.
C12P 19/32 - Nucléotides avec un système cyclique condensé, contenant un cycle à six chaînons, comportant deux atomes d'azote dans le même cycle, p.ex. nucléotides puriques, dinucléotide de la nicotinamide-adénine
36.
COMPOSITION, UNDERLAYER FILM, AND DIRECTED SELF-ASSEMBLY LITHOGRAPHY PROCESS
A composition includes: at least one polymer represented by formula (1), formula (2), or both; and a solvent. A1 and A2 are each independently a structural unit having 2 or more carbon atoms; a plurality of A's are the same or different and a plurality of A2s are the same or different; n1 and n2 are each independently an integer of 2 to 500; R1, R2, and R3 are each independently an organic group having 1 or more carbon atoms, or R1 and R2 taken together represent a ring together with X1, Y1, and P; R1 and R2 are the same or different; X1, Y1, and Y2 are each independently a single bond, —O—, or —NR4—; R4 is an organic group having 1 or more carbon atoms; and Z1 and Z2 are each independently hydrogen or an organic group having 1 to 15 carbon atoms.
A composition includes: at least one polymer represented by formula (1), formula (2), or both; and a solvent. A1 and A2 are each independently a structural unit having 2 or more carbon atoms; a plurality of A's are the same or different and a plurality of A2s are the same or different; n1 and n2 are each independently an integer of 2 to 500; R1, R2, and R3 are each independently an organic group having 1 or more carbon atoms, or R1 and R2 taken together represent a ring together with X1, Y1, and P; R1 and R2 are the same or different; X1, Y1, and Y2 are each independently a single bond, —O—, or —NR4—; R4 is an organic group having 1 or more carbon atoms; and Z1 and Z2 are each independently hydrogen or an organic group having 1 to 15 carbon atoms.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
The purpose of the present invention is to provide: a radiation-sensitive resin composition which enables the formation of a resist film having excellent sensitivity, LWR performance, water repellency and development defect reducing properties and has satisfactory storage stability; and a pattern formation method. Provided is a radiation-sensitive resin composition comprising: a polymer containing a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by formula (α); and a solvent. (In formula (1), RK1represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; L1represents an alkanediyl group having 1 to 5 carbon atoms; and Rf1represents a fluorinated hydrocarbon group having 5 to 7 fluorine atoms and also having 2 to 10 carbon atoms.) (In formula (α), RWrepresents a monovalent organic group containing a cyclic structure and having 3 to 40 carbon atoms; Rfaand Rfbeach independently represent a fluorine atom or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; R11and R12each independently represent a hydrogen atom, a fluorine atom, a hydrocarbon group having 1 to 10 carbon atoms, or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; n1 represents an integer of 1 to 4, in which, when n1 is 2 or more, a plurality of Rfa's and Rfb's are the same as or different from each other; n2 represents an integer of 0 to 4, in which, when n2 is 2 or more, a plurality of R11's and R12's are the same as or different from each other; no carbonyl group is interposed between a sulfur atom in a sulfonic acid ion and the cyclic structure in RW; and Z+ represents a monovalent onium cation.)
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, MOLDED OBJECT FROM EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, AND PRODUCTION METHOD THEREFOR
A molded object from expanded crystalline-thermoplastic-resin particles which is obtained by mutually fusion-bonding columnar expanded crystalline-thermoplastic-resin particles (1) having no through-hole. The molded object from expanded crystalline-thermoplastic-resin particles has an expansion ratio of 15-90. The molded object from expanded crystalline-thermoplastic-resin particles has a closed-cell content of 90% or higher. The molded object from expanded crystalline-thermoplastic-resin particles has an open-cell content of 2-12%.
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
39.
POLYPROPYLENE-BASED RESIN FOAM PARTICLES, METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN FOAM PARTICLES, AND LOGISTICS PACKAGING MATERIAL
Foam particles which have a mass ratio of foam core layer to coating layer of 97:3-88:12 and a bulking factor of 5-45 times, inclusive, and have a coating layer which comprises PE-LLD, wherein the melting point of the PE-LLD is 105-130°, inclusive, and the bend elastic constant Ms of the PE-LLD is 120-600MPa, inclusive. A logistics packaging material comprising a foam-particle molded body, wherein the scale factor of the molded body is 5-45 times, inclusive, the maximum flexural strength thereof is 0.3MPa or higher, the product of the tensile strength times the tensile elongation is 18MPa·% or higher, the coefficient of dynamic friction against a polyvinyl chloride sheet is at least 0.4 and less than 0.7, and the coefficient of static friction against a polyvinyl chloride sheet is less than 1.0.
NATIONAL UNIVERSITY CORPORATION, IWATE UNIVERSITY (Japon)
Inventeur(s)
Oishi Yoshiyuki
Tsukamoto Tadashi
Kadota Toshiaki
Iizuka Shunsuke
Okamoto Koichi
Abrégé
This polymer consists of a repeating unit represented by formula (1). [In formula (1), -N(R')-RN(R')- is a structure derived from an unsubstituted or substituted dimer diamine, and R', R1and R2 are each independently a hydrogen atom, a halogen atom, an unsubstituted or substituted hydrocarbon group having 1-20 carbon atoms, or an unsubstituted or substituted heterocyclic aromatic group having 3-20 carbon atoms.]
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromolécule; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
41.
SILICON-CONTAINING COMPOSITION AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE
A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.
A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.
C08G 77/24 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant des halogènes
One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminated body, or an electronic component, said composition including a polymer containing a repeating unit that is represented by formula (1). [In formula (1): -N(R')-R3-N(R')- is a structure derived from a dimer diamine substituted by an unsubstituted group or a substituted group; R', R1, and R2each independently represent a hydrogen atom, a halogen atom, a C1-20 hydrocarbon group substituted by an unsubstituted or a substituted group, a C3-20 heterocyclic aliphatic group substituted by an unsubstituted or a substituted group, or a C3-20 heterocyclic aromatic group substituted by an unsubstituted or a substituted group; and -NR1R2may be a nitrogen-containing heterocyclic group with 5-20 ring-forming atoms in which R1and R2 are bound to each other.]
C08L 79/04 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
B32B 27/42 - Produits stratifiés composés essentiellement de résine synthétique comprenant des résines de condensation d'aldéhydes, p.ex. avec des phénols, des urées ou des mélamines
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromolécule; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
43.
RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND
A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A− represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.
A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A− represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.
A method for forming a protective film includes directly or indirectly coating only a periphery of a substrate with a composition. The composition includes a compound having an aromatic ring, and a solvent. The solvent includes a first solvent having a normal boiling point of 156° C. or higher and lower than 300° C. A content of the first solvent in the solvent is preferably 20 mass % or more and 100 mass % or less. The first solvent is preferably an ester, an alcohol, an ether, a carbonate, or a combination of two or more of an ester, an alcohol, an ether, and a carbonate.
H01L 21/3213 - Gravure physique ou chimique des couches, p.ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
METHOD FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, HOLDER FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, AND METHOD FOR EVALUATING INTRAVASCULAR INDWELLING DEVICE
In this method for manufacturing an intravascular indwelling device, there are used a cylindrical holder (1) for holding an intravascular indwelling device (20) in an interior space, and an outer cylindrical body (2) that has an inside diameter larger than the outside diameter of the holder (1). The holder (1) holding the intravascular indwelling device (20) is housed in the outer cylindrical body (2), and a suspension (S) of the target cells is fed into the outer cylindrical body (2). The outer cylindrical body (2) and the holder (1) are operated so that the suspension (S) flows relative to the intravascular indwelling device (20) while in contact with the intravascular indwelling device (20), and the target cells are cultured.
A61L 31/00 - Matériaux pour autres articles chirurgicaux
A61F 2/86 - Stents ayant une forme caractérisée par des éléments filiformes; Stents ayant une forme caractérisée par une structure de type filet ou de type à mailles
C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
A radiation-sensitive resin composition includes a polymer and a compound. The compound includes a first structural unit including an aromatic carbon ring to which no less than two hydroxy groups bond, and a second structural unit including an acid-labile group which is dissociable by an action of an acid to give a carboxy group. The compound is represented by formula (1). R1 represents a monovalent organic group having 1 to 30 carbon atoms; and X+ represents a monovalent radiation-sensitive onium cation. A weight average molecular weight of the polymer is no greater than 10,000.
A radiation-sensitive resin composition includes a polymer and a compound. The compound includes a first structural unit including an aromatic carbon ring to which no less than two hydroxy groups bond, and a second structural unit including an acid-labile group which is dissociable by an action of an acid to give a carboxy group. The compound is represented by formula (1). R1 represents a monovalent organic group having 1 to 30 carbon atoms; and X+ represents a monovalent radiation-sensitive onium cation. A weight average molecular weight of the polymer is no greater than 10,000.
R1—COO−X+ (1)
A radiation-sensitive resin composition includes: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid; a radiation-sensitive acid generator; and a compound represented by formula (1). Ar1 represents a group obtained by removing (a+b+2) hydrogen atoms from an aromatic hydrocarbon ring having 6 to 30 ring atoms; R1 represents a halogen atom or a monovalent organic group having 1 to 20 carbon atoms; L1 represents a divalent linking group; R2 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms; a is an integer of 0 to 10, b is an integer of 1 to 10, wherein a sum of a and b is no greater than 10; and X+ represents a monovalent radiation-sensitive onium cation.
A radiation-sensitive resin composition includes: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid; a radiation-sensitive acid generator; and a compound represented by formula (1). Ar1 represents a group obtained by removing (a+b+2) hydrogen atoms from an aromatic hydrocarbon ring having 6 to 30 ring atoms; R1 represents a halogen atom or a monovalent organic group having 1 to 20 carbon atoms; L1 represents a divalent linking group; R2 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms; a is an integer of 0 to 10, b is an integer of 1 to 10, wherein a sum of a and b is no greater than 10; and X+ represents a monovalent radiation-sensitive onium cation.
C07C 65/24 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes polycycliques
C07C 323/62 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des groupes carboxyle liés au même squelette carboné ayant l'atome de soufre d'au moins un des groupes thio lié à un atome de carbone d'un cycle aromatique à six chaînons du squelette carboné
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
C07C 69/92 - Esters d'acides carboxyliques dont un groupe carboxyle estérifié est lié à un atome de carbone d'un cycle aromatique à six chaînons d'acides hydroxycarboxyliques monocycliques dont les groupes hydroxyle et les groupes carboxyle sont liés à des atomes de carbone d'un cycle aromatique à six chaînons avec des groupes hydroxyle éthérifiés
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
48.
METHOD FOR PRODUCING LENS, RADIATION-SENSITIVE COMPOSITION FOR PRODUCING LENS, LENS, IMAGING ELEMENT, IMAGING DEVICE, DISPLAY ELEMENT, AND DISPLAY DEVICE
A lens is produced by a method comprising: a step for applying a radiation-sensitive composition onto a base material to form a coating film; a step for irradiating a portion of the coating film with a radioactive ray to generate an acid in an exposed portion; a step for developing the coating film that has been irradiated with the radioactive ray to form a pattern; a step for irradiating the pattern with a radioactive ray; and a step for heating the pattern after the irradiation of the pattern with the radioactive ray to form a lens. The radiation-sensitive composition comprises at least one polymer (A), a radiation-sensitive acid generator (B) and a solvent(C), in which the polymer (A) contains, in a single molecule or different molecules, a structural unit (a1) having a hydroxyl group bound to an aromatic ring and a structural unit (a2) having such a configuration that an acid-dissociating group is detached by the action of an acid to generate a carboxyl group.
A radiation-sensitive resin composition includes: a polymer which has a first structural unit including a phenolic hydroxyl group, and a second structural unit represented by formula (1); and a radiation-sensitive acid generating agent which has a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a hydrogen atom or the like; and R3 represents a divalent monocyclic alicyclic hydrocarbon group having 3 to 12 ring atoms. Ar1 represents a group obtained by removing (q+1) hydrogen atoms on an aromatic ring from an arene formed by condensation of at least two benzene rings; R4 represents a monovalent organic group having 1 to 20 carbon atoms; q is an integer of 0 to 7; and R5 represents a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms, or the like.
A radiation-sensitive resin composition includes: a polymer which has a first structural unit including a phenolic hydroxyl group, and a second structural unit represented by formula (1); and a radiation-sensitive acid generating agent which has a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a hydrogen atom or the like; and R3 represents a divalent monocyclic alicyclic hydrocarbon group having 3 to 12 ring atoms. Ar1 represents a group obtained by removing (q+1) hydrogen atoms on an aromatic ring from an arene formed by condensation of at least two benzene rings; R4 represents a monovalent organic group having 1 to 20 carbon atoms; q is an integer of 0 to 7; and R5 represents a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms, or the like.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/06 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'halogène ou des groupes nitro ou nitroso liés au squelette carboné
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
Provided are: a method for producing a semiconductor substrate using a cleaning fluid excellent in terms of the property of cleaning peripheral portions of substrates and waste-liquid stability; a method for forming a resist underlayer film; and the cleaning fluid. This method for producing a semiconductor substrate comprises: a step in which a composition for resist underlayer film formation is applied directly or indirectly to a substrate; a step in which peripheral portions of the substrate are cleaned with a cleaning fluid; and a step in which after the cleaning step, a resist pattern is formed directly on or indirectly over the resist underlayer film formed in the application step. The composition for resist underlayer film formation includes a metal compound and a solvent, and the cleaning fluid includes an organic acid.
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided are abrasive grains and a composition for chemical mechanical polishing which are for selectively polishing a silicon nitride film, and which are applicable not only to silicon oxide films but also to amorphous silicon films and polysilicon films. This method for manufacturing abrasive grains includes: a first step of heating a mixture which contains particles having a sulfanyl group (—SH) fixed to the surface thereof via covalent bonds, and which contains a compound having carbon-carbon unsaturated double bonds; and a second step, which is performed after the first step, of further adding a peroxide and carrying out heating.
Provided is an inorganic foam, a base material of the inorganic foam being an inorganic polymer having a leucite crystal structure. The area of a peak derived from the leucite crystal in an X-ray diffraction spectrum of the inorganic foam is characterized by satisfying Equation (1). (1): D(geo)/D(pur)≧0.5 (D(geo) denotes the area of a peak located at 2θ=27.3° derived from the leucite crystal in the X-ray diffraction spectrum of the inorganic foam, and D(pur) is the area of a peak located at 2θ=27.3° derived from the leucite crystal in an X-ray diffraction spectrum of a pure material of leucite.)
C04B 35/00 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
53.
RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD
A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),
A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),
A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),
where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
54.
POLYOLEFIN-BASED RESIN EXPANDED BEADS, MOLDED ARTICLE OF POLYOLEFIN-BASED RESIN EXPANDED BEADS AND METHOD FOR PRODUCING POLYOLEFIN-BASED RESIN EXPANDED BEADS
A molded article of polyolefin-based resin expanded beads having excellent appearance and further suppressed color unevenness is provided.
A molded article of polyolefin-based resin expanded beads having excellent appearance and further suppressed color unevenness is provided.
Polyolefin-based resin expanded beads obtained by expanding polyolefin-based resin particles including one or two or more metal borates selected from zinc borate and magnesium borate, wherein the particles of the metal borate has an arithmetic average particle diameter based on the number of 1 μm or more, and a number rate of the particles of the metal borate having a particle diameter of 5 μm or more is 20% or less. A method for producing polyolefin-based resin expanded beads by releasing expandable polyolefin-based resin particles containing one or two or more metal borates selected from zinc borate and magnesium borate and a physical blowing agent dispersed in an aqueous medium in a closed vessel together with the aqueous medium from the closed vessel to a low pressure region than an inside of the closed vessel to expand the expandable polyolefin-based resin particles, the method comprising: using a metal borate having an arithmetic average particle diameter based on the number of 1 μm or more and a number rate of the particles having a particle diameter of 5 μm or more of 20% or less as the metal borate.
C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
A method for predicting efficacy of treatment of a lung cancer patient using an immune checkpoint inhibitor includes isolating exosomes from a biological sample derived from the lung cancer patient, and determining an expression level of a protein present in the exosomes by a mass spectrometry method, in which the protein is one or more proteins selected from the group of proteins shown in Table 1-1 to Table 1-6.
G01N 33/574 - Tests immunologiques; Tests faisant intervenir la formation de liaisons biospécifiques; Matériaux à cet effet pour le cancer
G01N 33/68 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique faisant intervenir des protéines, peptides ou amino-acides
56.
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR POLISHING
A composition for chemical mechanical polishing and a polishing method allow a semiconductor substrate containing at least one of a polysilicon film and a silicon nitride film to be polished at a high speed, while being capable of reducing the incidence of surface defects in the polished surface. The composition for chemical mechanical polishing contains (A) abrasive grains having plural protrusions on their surfaces and (B) a liquid medium, wherein the absolute value of the zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.
A method is provided for producing oligodendrocyte-like cells, including (A) increasing abundances of oligodendrocyte transcription factor 2 (OLIG2) mutant and SRY-box transcription factor 10 (SOX10) in human pluripotent stein cells and (B) culturing the human pluripotent stem cells in which the abundances of the OLIG2 mutant and the SOX10 are increased and consequently differentiating the human pluripotent stem cells into oligodendrocyte-like cells, in which the OLIG2 mutant lacks a serine residue of wild-type OLIG2 at position 147, or the serine residue of the wild-type OLIG2 at position 147 is substituted with an amino acid other than serine.
Provided is a radiation-sensitive composition containing: a polymer having an acid dissociable group; and at least one compound (b) selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). In formula (1), R1is a 1-20C monovalent organic group. R2is either a single bond, or is a 1-20C bivalent group that bonds to the N- in formula (1) through -CR4R5- or an aromatic ring. Ma+is an a-valent cation. In formula (2), R7is a group having a partial structure in which an iodine atom is bonded to an aromatic ring. Mb+ is a b-valent cation.
C07C 311/09 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé le squelette carboné étant substitué de plus par au moins deux atomes d'halogène
C07C 311/21 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes sulfonamide lié à un atome de carbone d'un cycle aromatique à six chaînons
Provided is a radiation-sensitive composition comprising a polymer having a structural unit represented by formula (1) and a photodegradable base. In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or the like. X1is an alkanediyl group, an oxygen atom, or a sulfur atom. Y1is a monovalent hydrocarbon group, a monovalent fluorinated hydrocarbon group, or a halogen atom. R2is a monovalent organic group. B1is a single bond or *1−COO−. R3is a substituted or unsubstituted divalent hydrocarbon group. Z1is a single bond, −O−, −COO−, −OCO−, −OCOO−, −CONR4−, −NR4CO−, −OCONR4-, −NR4COO−, or −NR4CONR5−. R4and R5 are hydrogen atoms or monovalent hydrocarbon groups.
A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R1 and R2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.
A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R1 and R2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.
C08F 297/02 - Composés macromoléculaires obtenus en polymérisant successivement des systèmes différents de monomère utilisant un catalyseur de type ionique ou du type de coordination sans désactivation du polymère intermédiaire utilisant un catalyseur du type anionique
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method is provided for producing astrocyte-like cells, including (A) upregulating transcription factors including SRY-box transcription factor 9 (SOX9), nuclear factor IA (NFIA), and nuclear factor IB (NFIB) in human pluripotent stein cells and (B) culturing the human pluripotent stem cells, in which the transcription factors are upregulated, and consequently differentiating the human pluripotent stern cells into astrocyte-like cells.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which includes a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the coating step, and a step for etching while using the resist pattern as a mask, wherein: the composition for forming the resist underlayer film contains a compound having a partial structure represented by formula (1), and a solvent; and the compound has at least one monovalent group which includes an aromatic heterocycle having a 5- to 20-membered ring. (In formula (1), Ar1and Ar2each independently represent a substituted or unsubstituted aromatic ring which has a 5- to 20-membered ring and forms a condensed ring structure and two adjacent carbon atoms in formula (1). R1 represents one or more groups selected from the group consisting of a monovalent ring including a substituted or unsubstituted aromatic ring having a 5- to 60-membered ring, and a monovalent group including an aromatic heterocycle having a 5- to 20-membered ring. L is a single bond or a divalent linking group. * and ** each represent a position which bonds to a section of said compound other than the partial structure represented by formula (1). m and n each independently represent an integer from 0 to 3. However, m+n is 1 or higher.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C07D 209/08 - Indoles; Indoles hydrogénés avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés directement aux atomes de carbone de l'hétérocycle
C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
C08G 61/00 - Composés macromoléculaires obtenus par des réactions créant une liaison carbone-carbone dans la chaîne principale de la macromolécule
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japon)
Inventeur(s)
Miyazaki Yuta
Arai Takayuki
Ito Masayoshi
Negishi Hashiru
Harashima Hideyoshi
Sato Yusuke
Abrégé
A method for purifying a composition that comprises a step for dissolving the composition containing a compound represented by formula(1) [in formula (1): R1represents -N(R2)-R2(wherein R2represents a C1-C4 alkyl group); R3and R4represent a C3-C8 alkanediyl group; R5represents a hydroxyl group; R6represents -R7-OH (wherein R7represents a C4-C12 alkanediyl group) or a hydrogen atom; and n is an integer of 0 or 1] in an aqueous layer and performing liquid-liquid extraction, wherein an oil layer used in the liquid-liquid extraction contains one or more liquids selected from the group consisting of a ketone liquid, an ester liquid and an ether liquid each having a solubility parameter (SP value) of 14.8-20.5 (MPa1/2).
A61K 31/713 - Acides nucléiques ou oligonucléotides à structure en double-hélice
A61K 47/18 - Amines; Amides; Urées; Composés d’ammonium quaternaire; Acides aminés; Oligopeptides ayant jusqu’à cinq acides aminés
A61K 47/24 - Composés organiques, p.ex. hydrocarbures naturels ou synthétiques, polyoléfines, huile minérale, gelée de pétrole ou ozocérite contenant des atomes autres que des atomes de carbone, d'hydrogène, d'oxygène, d'halogènes, d'azote ou de soufre, p.ex. cyclométhicone ou phospholipides
A61K 47/34 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone, p.ex. polyesters, acides polyaminés, polysiloxanes, polyphosphazines, copolymères de polyalkylène glycol o
C07C 219/06 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes hydroxy estérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé les groupes hydroxy étant estérifiés par des acides carboxyliques ayant les groupes carboxyle estérifiants liés à des atomes d'hydrogène ou à des atomes de carbone acycliques d'un squelette carboné acyclique saturé
C07C 219/08 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes hydroxy estérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé au moins un des groupes hydroxy étant estérifié par un acide carboxylique ayant le groupe carboxyle estérifiant lié à un atome de carbone acyclique d'un squelette carboné acyclique non saturé
C07C 229/12 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant un seul groupe amino et un seul groupe carboxyle liés au squelette carboné l'atome d'azote du groupe amino étant lié de plus à des atomes de carbone acycliques ou à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons à des atomes de carbone de squelettes carbonés acycliques
C12N 15/113 - Acides nucléiques non codants modulant l'expression des gènes, p.ex. oligonucléotides anti-sens
64.
COMPOSITION FOR ALLEVIATING PULMONARY HYPERTENSION, METHOD FOR PREDICTING PROGNOSIS OF PULMONARY HYPERTENSION, METHOD FOR ASSISTING IN DETERMINING SEVERITY OF PULMONARY HYPERTENSION, AND METHOD FOR ASSISTING IN DIAGNOSING PULMONARY HYPERTENSION
The present invention provides (1) a composition for improving pulmonary hypertension, comprising at least one substance capable of normalizing gut microbiota in a patient with pulmonary hypertension as an active ingredient; (2) a method for predicting the prognosis of a patient with pulmonary hypertension, or a method for assisting the determination of the severity of a patient with pulmonary hypertension, the method comprising detecting one or more types of bacteria selected from bacteria belonging to the family Micrococcaceae, Streptococcaceae, Pasteurellaceae, Veillonellaceae or Lactobacillaceae in gut microbiota in the patient with pulmonary hypertension; and (3) a method for assisting the diagnosis of pulmonary hypertension, the method comprising comparing the IgA level in feces of a subject to that of a healthy subject.
G01N 33/569 - Tests immunologiques; Tests faisant intervenir la formation de liaisons biospécifiques; Matériaux à cet effet pour micro-organismes, p.ex. protozoaires, bactéries, virus
65.
RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING SUBSTRATE, AND COMPOUND
Provided are: a radiation-sensitive resin composition that can be formed into a resist film having satisfactory levels of sensitivity and CDU performance even when a next-generation technology is applied; and a pattern formation method. The radiation-sensitive resin composition contains a compound A represented by formula (I). [Chemical 1] (In the formula, R1is a (m+m')-valent organic group and has a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both. X1is a group represented by formula (1-1) or a group represented by formula (1-2). X2is a group represented by formula (2-1) or a group represented by formula (2-2). Y+ is a monovalent onium cation. m is an integer of 1-2. m' is an integer of 0-1.) [Chemical 2] (In the formula, * represents a bond with another group.) The radiation-sensitive resin composition also contains a resin B including a structural unit having an acid-dissociable group, a radiation-sensitive acid generator other than the compound A, and a solvent.
C07C 59/11 - Composés saturés ne comportant qu'un groupe carboxyle et contenant des groupes hydroxyle ou O-métal contenant des cycles
C07C 61/04 - Composés saturés comportant un groupe carboxyle lié à un cycle à trois ou quatre chaînons
C07C 62/08 - Composés saturés contenant des groupes éther, des groupes , des groupes ou des groupes
C07C 62/24 - Composés saturés contenant des groupes cétone le groupe cétone faisant partie d'un cycle
C07C 69/34 - Esters d'acides acycliques polycarboxyliques saturés dont un groupe carboxyle estérifié est lié à un atome de carbone acyclique
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
Provided are: a radiation-sensitive resin composition that can form a resist film that exhibits satisfactory levels of sensitivity, CDU performance, pattern circularity, LWR performance, and pattern rectangularity even when forming a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), R1represents a C1-40 monovalent chain-shaped organic group. R2and R3are each a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. Rf11and RF12are each a fluorine atom or a monovalent fluorinated hydrocarbon group. R4, R5, R6, R7and R8are each a hydrogen atom, a hydroxyl group, a halogen atom, or a C1-20 monovalent organic group. Alternatively, if a plurality of R8are present, two of the plurality of R8mutually combine to form a ring structure having 5-20 ring members and configured by also two carbon atoms of the benzene ring in formula (1) to which these moieties are bonded.) (In formula (2), RBdenotes a C3-40 monovalent organic group including a ring structure. Rf21and Rf22each denote a fluorine atom or a monovalent fluorinated hydrocarbon group. Z+ is a monovalent radiation-sensitive onium cation.)
A vehicle seat core material includes a molded article that includes thermoplastic resin expanded beads. The molded article has a substantially rectangular shape in a top view, and has a front side and a rear side opposite the front side. The molded article has an average density (Z) of 20 kg/m3 to 50 kg/m3. The molded article includes, on the rear side of the molded article, a rear thin portion having a thickness of 10 mm to 40 mm, the thickness of the rear thin portion being smaller than an average thickness of the molded article. A ratio (Y/Z) of a density (Y) of the rear thin portion to the average density (Z) of the molded article is 1.05 to 3. The rear thin portion of the molded article has a fusion rate of 70% or more.
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity, LWR performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition comprises: an onium salt compound represented by formula (1); a resin containing a first structural unit having an acid-dissociating group and a second structural unit having a polycyclic lactone structure, a polycyclic sultone structure or a polycyclic carbonate structure; and a solvent. (In formula (1), R1represents a monovalent linear organic group having 1 to 40 carbon atoms; R2and R3independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; Rf11and Rf12122 independently represent an integer of 1 to 4; R4, R5, R6, R7and R8independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; when there are a plurality of R8's, two of the plurality of R81233 represents an integer of 1 to 5.)
This radiation-sensitive composition contains: a polymer having an acid dissociative group; and a compound represented by formula (1). In formula (1), R1is a monovalent group having an aromatic ring structure and 5-20 carbons. R1has an aromatic ring structure and is bonded to N-. R2represents a monovalent organic group having 1-20 carbons. Mn+ represents an n-valent cation. n represents 1 or 2.
The purpose of the present invention is to provide a production method for semiconductor substrates that makes it possible to achieve sufficient levels of sensitivity, LWR performance, and the like. According to the present invention, a production method for semiconductor substrates includes a step for directly or indirectly vapor depositing a metal or a metal compound on a substrate to form a metal-containing resist film and a step for exposing the resist film, the metal or metal compound including Au atoms, Cr atoms, Ag atoms, In atoms, or any of those.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains abrasive grains (A) and an iron(III) compound (B), wherein the nitric acid ion concentration in the chemical-mechanical polishing composition is 200 ppm or less.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains abrasive grains (A) and an iron(III) compound (B), wherein the iron(III) compound (B) is a chelate compound.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains: abrasive grains (A); an iron(III) compound (B); and at least one type of metal atom selected from the group consisting of Al atoms, Mn atoms, and Zn atoms. The total Al, Mn, and Zn atom content is 0.1 ppm to 100 ppm, inclusive.
This method for manufacturing a polypropylene-based resin foamed particle molded article comprises: filling a forming mold with foamed particles (1) compressed by pressurized gas; and then supplying a heated medium in the forming mold to conduct in-mold molding of the foamed particles (1) in the forming mold. Each of the foamed particles (1) has a cylinder shape having a through-hole (11). The through-holes (11) have an average hole diameter d of not less than 0.1 mm but less than 1 mm. The ratio d/D of the average hole diameter d of the through-holes (11) with respect to the average outer diameter D of the foamed particles (1) is 0.4 or less. In a state where the forming mold is filled with the foamed particles (1), the compression percentage P of the foamed particles (1) is 20-80%.
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
75.
CROSSLINKED OLEFIN-BASED THERMOPLASTIC ELASTOMER EXPANDED BEAD AND METHOD FOR PRODUCING SAME
A crosslinked olefin-based thermoplastic elastomer expanded bead including a base polymer having an olefin-based thermoplastic elastomer and a brominated bisphenol-based flame retardant having a chemical structure represented by formula (1). A difference TmTPO-TFR is −5° C. to 40° C., where TmTPO is a melting point of the olefin-based thermoplastic elastomer and TFR is the lower of a glass transition temperature TgFR and a melting point TmFR of the brominated bisphenol-based flame retardant. A xylene insoluble content is 5 mass % to 80 mass %. R1 and R3 in the formula (1) are monovalent substituents, R2 is a divalent substituent, and n is an integer from 1 to 6:
A crosslinked olefin-based thermoplastic elastomer expanded bead including a base polymer having an olefin-based thermoplastic elastomer and a brominated bisphenol-based flame retardant having a chemical structure represented by formula (1). A difference TmTPO-TFR is −5° C. to 40° C., where TmTPO is a melting point of the olefin-based thermoplastic elastomer and TFR is the lower of a glass transition temperature TgFR and a melting point TmFR of the brominated bisphenol-based flame retardant. A xylene insoluble content is 5 mass % to 80 mass %. R1 and R3 in the formula (1) are monovalent substituents, R2 is a divalent substituent, and n is an integer from 1 to 6:
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Industrial chemicals; photoresists; synthetic resins,
unprocessed; artificial resins, unprocessed; chemical
preparations for use in photography; photographic
sensitizers; photographic developers; chemical coatings used
in the manufacture of semiconductors; detergents for use in
manufacturing processes.
77.
CULTURE METHOD, CULTURE PRODUCT, SPHEROID, AND METHOD FOR SCREENING FOR TEST SUBSTANCE
This culture method includes culturing a spheroid of human neural cell-like cells in the presence of a tau protein aggregate and then culturing the culture product in a culture medium containing a lipid in an amount of 5 μg/mL or more, in which the lipid comprises at least one component selected from the group consisting of a glycerolipid, a glycerophospholipid and a sphingolipid. The culture method includes culturing a spheroid of human neural cell-like cells in the presence of a tau protein aggregate and then culturing the culture product in a culture medium containing a neurotrophic factor.
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
C12N 15/12 - Gènes codant pour des protéines animales
78.
VERTEBRAL BODY ESTIMATION MODEL LEARNING DEVICE, VERTEBRAL BODY ESTIMATING DEVICE, FIXING CONDITION ESTIMATING DEVICE, VERTEBRAL BODY ESTIMATION MODEL LEARNING METHOD, VERTEBRAL BODY ESTIMATING METHOD, FIXING CONDITION ESTIMATING METHOD, AND PROGRAM
This vertebral body estimation model learning device comprises: a vertebral body estimation model executing unit for executing a vertebral body estimation model, which is a mathematical model for estimating, on the basis of image data of a vertebral body two-dimensional image being a two-dimensional image in which a vertebral body appears, positions of each vertex of the vertebral body and vectors at each vertex, the vectors being oriented from the vertices toward a center of the vertebral body, to thereby estimate the positions of the vertices of a vertebral body appearing in image data of a vertebral body two-dimensional image to be estimated, and the vectors at each vertex; and an updating unit for updating the vertebral body estimation model on the basis of the result of the estimation performed by the vertebral body estimation model executing unit.
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has excellent sensitivity, CDU performance, and storage stability, even when next-generation technology is applied. According to the present invention, a radiation-sensitive resin composition contains: a resin that includes a structural unit that is represented by formula (1) (in which R1is a hydrogen atom, a C1–5 alkyl group, or a C1–5 halogenated alkyl group, Rxis a monovalent C1–20 hydrocarbon group, n is an integer that is 0–14, and Ryis a fluorine atom, a C1–5 hydrocarbon group, or a C1–5 fluorinated hydrocarbon group, each Ry being the same or different); at least one type of salt that includes an organic acid anion portion and a cation portion; and a solvent. The salt includes a carboxylate anion in the organic acid anion portion, and at least a portion of the organic acid anion portion of the salt includes an iodine-substituted aromatic ring structure.
Polyethylene resin foam particles using a non-crosslinked linear low-density polyethylene as base resin. The density, the amount of melting heat, the melting point and the melt flow rate under the conditions of a temperature of 190°C and a load of 2.16 kg of the linear low-density polyethylene are within predetermined ranges. The average bubble diameter of the foam particles is from 50 μm to 180 μm.
Polyethylene resin foam particles using a mixed resin of virgin polyethylene (A) and recycled polyethylene (B) as base resin, and a method for producing said particles. The mixed resin contains a prescribed ratio of the virgin polyethylene (A) and the recycled polyethylene (B). The virgin polyethylene (A) is a linear low-density polyethylene (A1) having prescribed physical properties and polymerized using a metallocene polymerization catalyst. The recycled polyethylene (B) is a post-consumer material containing a linear low-density polyethylene (B1) and a low-density polyethylene (B2), the linear low-density polyethylene (B1) being the main component.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film-forming composition from which it is possible to form a resist underlayer film that has excellent solvent resistance and excellent resist pattern rectangularity; and a resist underlayer film-forming composition. The method for producing a semiconductor substrate comprises: a step for directly or indirectly applying a resist underlayer film-forming composition to a substrate; a step for applying a resist film-forming composition to a resist underlayer film that is formed in the step for applying the resist underlayer film-forming composition; a step for exposing, to radiation, a resist film that is formed in the step for applying the resist film-forming composition; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer that has a partial structure represented by formula (i), and a solvent. (In formula (i), Y1represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and an alkanediyl group. Y2represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and a single bond. Note that in the case where Y1represents an alkanediyl group, Y2represents a sulfonyl group or a carbonyl group. In the case where Y2represents a single bond, Y1represents a sulfonyl group or a carbonyl group. R1represents a monovalent organic group having 1-20 carbon atoms. X+ represents a monovalent onium cation.* represents a bond between the polymer and another structure.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
This biomimetic system includes a container and a film that contains cells similar to human cholangiocytes. The film that contains cells similar to human cholangiocytes includes a permeable substrate and two-dimensional tissue of cells similar to human cholangiocytes layered on one side of the permeable substrate. The film that contains cells similar to human cholangiocytes partitions the container into a first section and a second section; and the one side of the permeable substrate is exposed in the first section, while another side of the permeable substrate is exposed in the second section. The cells similar to human cholangiocytes express P-gp; and the efflux ratio calculated using formula (1) is at least 1.5. (1): Efflux ratio = (permeation speed of rhodamine 123 passing from the second section to the first section) / (permeation speed of rhodamine 123 passing from the first section to the second section)
C12N 5/00 - Cellules non différenciées humaines, animales ou végétales, p.ex. lignées cellulaires; Tissus; Leur culture ou conservation; Milieux de culture à cet effet
C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
Provided is a method for forming a metal-containing film, the method comprising a step for coating, on a substrate, a composition for forming a metal-containing film, and a step for heating the coated film formed by the coating step at 200-500°C, wherein: the composition for forming a metal-containing film contains a metal compound, a carbazic acid ester derivative, and a solvent; and the carbazic acid ester derivative comprises at least one compound selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). Note that R11and R21are each independently a monovalent organic group having 1-20 carbons, R12, R13, R14, and R22are each independently a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1-10 carbons, and R23 is a substituted or unsubstituted divalent aliphatic hydrocarbon group having 1-10 carbons.
C23C 18/02 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement; Dépôt par contact par décomposition thermique
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p.ex. dépôt électrolytique
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
An information processing device (10) according to the present invention comprises a storage unit (201), a reception unit (101), a condition extraction unit (102), and an output control unit (103). The storage unit (201) stores experiment condition information including a plurality of experiment conditions for performance experiments regarding a lithography material to be used in a semiconductor lithography process, the experiment condition information being stored for each performance experiment. The reception unit (101) receives an input of utilization condition information including a plurality of utilization conditions in which the lithography material is to be utilized. The condition extraction unit (102) extracts experiment condition information similar to the inputted utilization condition information from among the plurality of experiment condition information stored in the storage unit (201). The output control unit (103) outputs the extracted experiment condition information.
The kidney regeneration accelerator that contains a component obtained by decellularizing a mammalian organ. The production method for a kidney regeneration accelerator that involves decellularizing a mammalian organ to obtain a component that includes an extracellular matrix, freeze drying and then pulverizing the component to obtain a powder, and performing a sterilization treatment on the powder. A pharmaceutical composition for use in treating kidney disease that contains a component obtained by decellularizing a mammalian organ. A treatment method for kidney disease that involves applying a pharmaceutical composition that contains a component obtained by decellularizing a mammalian organ to a site to be treated of the kidney of a human or animal kidney disease patient.
A61L 27/36 - Matériaux pour prothèses ou pour revêtement de prothèses contenant des constituants de constitution indéterminée ou leurs produits réactionnels
88.
MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN FOAMED PARTICLE MOLDED BODY, POLYPROPYLENE-BASED RESIN FOAMED PARTICLE, AND METHOD FOR PRODUCING SAME
A molded article of polypropylene-based resin expanded beads, obtained by in-mold molding of the polypropylene-based resin expanded beads, each bead including: a core layer, in a foamed state, having a polypropylene-based resin; and a covering layer, which covers the core layer, having a polyethylene-based resin. A molded article magnification X [times] of the molded article is 55 times to 90 times, a value of a product X·σ50 of a 50% compressive stress σ50 [kPa] and the molded article magnification X is 6500 or more, and a 5% compressive stress σ5 of the expanded beads molded article is 5 kPa to 25 kPa.
B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
89.
Radiation polymerizable composition, cured layer of same, optical fiber containing cured layer and method for producing same
C08G 18/67 - Composés non saturés contenant un hydrogène actif
C08G 18/04 - Polymérisats d'isocyanates ou d'isothiocyanates avec des composés vinyliques
C03C 25/28 - Composés macromoléculaires ou prépolymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
90.
EXPANDED POLYPROPYLENE-BASED-RESIN PARTICLES AND METHOD FOR PRODUCING MOLDED EXPANDED-PARTICLE OBJECT
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
91.
METAL-CONTAINING FILM FORMATION COMPOSITION, METAL-CONTAINING FILM, METAL-CONTAINING FILM FORMATION METHOD, AND PRODUCTION METHOD OF METAL-CONTAINING FILM FORMATION COMPOSITION
Provided are: a metal-containing film formation composition from which a metal-containing film having excellent electric conductivity can be formed; a metal-containing film; a metal-containing film formation method; and a production method of a metal-containing film formation composition. This metal-containing film formation composition contains a metallic compound, a compound having an oxymethylene structure, and a solvent. The metallic compound is a metal salt or a metal complex. The compound having the oxymethylene structure generates an aldehyde structure when being degraded through heating. Metal atoms included in the metallic compound preferably belong to group 2 to group 14 and in third period to seventh period in the periodic table. The metal atoms are preferably those of copper.
C23C 18/08 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement; Dépôt par contact par décomposition thermique caractérisée par le dépôt d'un matériau métallique
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p.ex. dépôt électrolytique
92.
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that exhibits an excellent sensitivity, CDU performance, and development defect performance, even when next-generation technology is applied. The radiation-sensitive resin composition comprises a resin A that contains, inter alia, a structural unit given by formula (1) (in the formula, R1 represents a hydrogen atom, C1-C5 alkyl group, C1-C5 halogenated alkyl group, etc.); a resin B that contains a structural unit having an acid-dissociable group; one or two or more salts containing an organic acid anion moiety and a cation moiety; and a solvent. The salt contains a carboxylic acid anion in the organic acid anion moiety, and at least a portion of the organic acid anion moiety in the salt contains an iodine-substituted aromatic ring structure.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
Provided are a radiation-sensitive resin composition, a resin, a compound, and a pattern formation method with which it is possible to form a resist film that has excellent sensitivity, CDU performance, and resolution when next-generation technology is applied. A radiation-sensitive resin composition that includes: a resin including a structural unit (I) represented by formula (1); a radiation-sensitive acid generator including an organic acid anion moiety and an onium cation moiety; and a solvent. (In formula (1), Rais a hydrogen atom or a substituted or unsubstituted C1-10 monovalent hydrocarbon group. Ar1is a substituted or unsubstituted C6-20 divalent aromatic hydrocarbon group. m is 0 or 1. L1is -O-, *-COO-, a C1-20 divalent hydrocarbon group, or a combination of two or more thereof or is a single bond. *is a bond on the Ar1side. Ar2is a substituted or unsubstituted C6-20 monovalent aromatic hydrocarbon group. X is a an iodine atom or bromine atom substituting a hydrogen atom in a monovalent aromatic hydrocarbon group represented by Ar211 is an integer of 1 to (the number of hydrogen atoms in a monovalent aromatic hydrocarbon group represented by Ar2).)
[Problem] To provide a technique for suppressing deterioration of liquid permeability and pressure resistance characteristics during liquid passage of a chromatography carrier when a solvent has been substituted with an aqueous solvent that does not contain a buffering agent. [Solution] A method for filling a column with a chromatography carrier, said method comprising step 1 and step 2 below. (Step 1) A substitution step for substituting, with an aqueous solvent that does not contain a buffering agent, a slurry containing a target substance capturing chromatography carrier, a buffering agent having an acid dissociation constant (pKa) within a range of ±1.0 of the isoelectric point of the buffering agent, and an aqueous solvent, the liquid-phase pH having been adjusted to be within a range of ±2.0 of the isoelectric point of the carrier. (Step 2) A filling step for filling a column with the slurry for which the solvent substitution has been carried out in step 1
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Industrial chemicals; photoresists; synthetic resins, unprocessed; artificial resins, unprocessed; chemical preparations for use in photography; photographic sensitizers; photographic developers; chemical coatings used in the manufacture of semiconductors; detergents for use in manufacturing processes
96.
RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, and a solvent. The resin includes a structural unit A represented by formula (1) and a structural unit B having an acid-dissociable group. The structural unit represented by the formula (1) is excluded from the structural unit B. In the formula (1), A is a monovalent aromatic hydrocarbon group in which —ORY is bonded to a carbon atom adjacent to a carbon atom to which Lα is bonded, and hydrogen atoms on other carbon atoms are unsubstituted, or a part or all of the hydrogen atoms are substituted with a cyano group, a nitro group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkoxycarbonyloxy group, an acyl group, or an acyloxy group.
A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, and a solvent. The resin includes a structural unit A represented by formula (1) and a structural unit B having an acid-dissociable group. The structural unit represented by the formula (1) is excluded from the structural unit B. In the formula (1), A is a monovalent aromatic hydrocarbon group in which —ORY is bonded to a carbon atom adjacent to a carbon atom to which Lα is bonded, and hydrogen atoms on other carbon atoms are unsubstituted, or a part or all of the hydrogen atoms are substituted with a cyano group, a nitro group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkoxycarbonyloxy group, an acyl group, or an acyloxy group.
A thermoplastic olefinic elastomer expanded bead, which is an expanded bead including a thermoplastic olefinic elastomer as a main component, wherein the expanded bead has an average particle diameter of 0.5 to 5 mm, the expanded bead has a heat of fusion of 60 to 80 J/g, and a difference [Tm−Tc] between a melting point (Tm) and a crystallization temperature (Tc) of the expanded bead is 20° C. or lower.
A radiation-sensitive resin composition includes a solvent and an onium salt compound having a structure represented by formula (1). Rf1 and Rf2 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. R1 represents a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a fluorine atom, or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. n1+n2 is an integer of 2 to 8. n3 represents an integer of 0 to 5. X1 and X2 each independently represent an oxygen atom or a sulfur atom. Each * represents a bond with another structure. Z+ represents a monovalent radiation-sensitive onium cation.
A radiation-sensitive resin composition includes a solvent and an onium salt compound having a structure represented by formula (1). Rf1 and Rf2 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. R1 represents a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a fluorine atom, or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. n1+n2 is an integer of 2 to 8. n3 represents an integer of 0 to 5. X1 and X2 each independently represent an oxygen atom or a sulfur atom. Each * represents a bond with another structure. Z+ represents a monovalent radiation-sensitive onium cation.
Provided are a method for forming a resist pattern that demonstrates excellent performance in sensitivity, resolution, etc. in an exposure step when a next-generation exposure technique is applied, and a radiation-sensitive resin composition. The method for forming a resist pattern includes step (1) of forming a resist film in which a content of a radiation-sensitive acid generator (C) is 0.1% by mass or less, step (2) of exposing the resist film to EUV or an electron beam (EB), and step (3) of developing the resist film exposed in the step (2).
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
100.
METHOD FOR PRODUCING POLYPROPYLENE RESIN FOAM PARTICLES
To make it possible to provide a black foam-particle molded article that uses post-consumer materials of polypropylene resin foam molded articles containing carbon black and that has an exceptional appearance and properties, there is provided a method for producing polypropylene resin foam particles that include post-consumer materials of polypropylene resin foam molded articles containing carbon black. This method for producing polypropylene resin foam particles includes: a mixing step for melt-mixing polypropylene resin for which the melt flow rate at a temperature of 230°C and a load of 2.16 kg ranges from 1 g/10 min to 15 g/10 min, and recovered polypropylene resin composed of recovered post-consumer materials of polypropylene resin foam molded articles, using an extruder to obtain a mixture; an extrusion step; and a foaming step. The blend ratio of polypropylene resin in the mixture is 30-90 wt%, and the blend ratio of recovered polypropylene resin in the mixture is 10-70 wt% (where the total of the polypropylene resin and recovered polypropylene resin is 100 wt%). The recovered polypropylene resin includes carbon black. The carbon black content of the recovered polypropylene resin is 0.5-5 wt%. The melting point of the recovered polypropylene resin is 135-160°C. The melt flow rate of the recovered polypropylene resin at a temperature of 230°C and a load of 2.16 kg is greater than the melt flow rate of the polypropylene resin at a temperature of 230°C and a load of 2.16 kg, and the difference ((melt flow rate of recovered polypropylene resin)–(melt flow rate of polypropylene resin)) between the melt flow rate of the recovered polypropylene resin and the polypropylene resin ranges from 0.1 g/10 min to 12 g/10 min.
