JSR Corporation

Japon

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        Brevet 2 459
        Marque 122
Juridiction
        International 1 806
        États-Unis 729
        Europe 33
        Canada 13
Propriétaire / Filiale
[Owner] JSR Corporation 2 476
Techno Polymer Co., Ltd. 81
JSR Micro Inc. 17
Japan Coloring Co., Ltd. 16
Japan Fine Coatings Co. Ltd. 12
Date
Nouveautés (dernières 4 semaines) 15
2024 avril (MACJ) 14
2024 mars 16
2024 février 9
2024 janvier 15
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Classe IPC
G03F 7/004 - Matériaux photosensibles 486
G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons 448
G03F 7/20 - Exposition; Appareillages à cet effet 331
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou 305
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage 226
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Classe NICE
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture 94
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler 30
05 - Produits pharmaceutiques, vétérinaires et hygièniques 14
09 - Appareils et instruments scientifiques et électriques 13
42 - Services scientifiques, technologiques et industriels, recherche et conception 12
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Statut
En Instance 148
Enregistré / En vigueur 2 433
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1.

JSR MOR

      
Numéro d'application 1788074
Statut Enregistrée
Date de dépôt 2024-03-12
Date d'enregistrement 2024-03-12
Propriétaire JSR CORPORATION (Japon)
Classes de Nice  ? 01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture

Produits et services

Industrial chemicals; chemical preparations for use in photography; photoresists.

2.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Numéro d'application JP2023036847
Numéro de publication 2024/085030
Statut Délivré - en vigueur
Date de dépôt 2023-10-11
Date de publication 2024-04-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Katagiri,takashi
  • Abe,shinya
  • Naganawa,atsuko

Abrégé

The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a composition which is capable of forming a film that has excellent bending resistance and excellent solubility during liquid discharging; and a composition. The present invention provides a method for producing a semiconductor substrate, the method comprising a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is directly or indirectly formed on the resist underlayer film that has been formed by the application step, and a step in which etching is performed using the resist pattern as a mask, wherein: the resist underlayer film forming composition contains a solvent and a compound having a nitro group; the compound having a nitro group is a polymer having a repeating unit that comprises a nitro group and an aromatic ring, an aromatic ring-containing compound having a nitro group and a molecular weight of 600 to 3,000, or a combination thereof; the content ratio of the compound having a nitro group in the components of the resist underlayer film forming composition excluding the solvent is 10% by mass or more.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

3.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Numéro d'application JP2023036474
Numéro de publication 2024/084993
Statut Délivré - en vigueur
Date de dépôt 2023-10-06
Date de publication 2024-04-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Maruyama Ken
  • Nishikori Katsuaki
  • Kiriyama Kazuya

Abrégé

A radiation-sensitive composition comprising a polymer having: a side chain including an acid-dissociable group; and a side chain including one or more radiation-sensitive onium cation structures and two or more iodo groups.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/10 - Esters
  • G03F 7/20 - Exposition; Appareillages à cet effet

4.

MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND METHOD FOR PRODUCING SAME

      
Numéro d'application 18392071
Statut En instance
Date de dépôt 2023-12-21
Date de la première publication 2024-04-18
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura, Takumi
  • Ohta, Hajime

Abrégé

A method for producing a molded article of expanded beads includes filling tubular polypropylene-based resin expanded beads each having a through-hole in a mold, and supplying a heating medium to fusion-bond the expanded beads to each other. The expanded beads have a foamed layer constituted by polypropylene-based resin. A closed cell of the expanded beads is 90% or more. An average hole diameter (d) of through-holes of the expanded beads is less than 1 mm. A ratio [d/D] of the average hole diameter (d) to an average outer diameter (D) of the expanded beads is 0.4 or less. An open cell content of the molded article of expanded beads is 2.5% or more and 12% or less.

Classes IPC  ?

5.

ANTIBODY AND USE THEREOF

      
Numéro d'application JP2023036979
Numéro de publication 2024/080325
Statut Délivré - en vigueur
Date de dépôt 2023-10-12
Date de publication 2024-04-18
Propriétaire
  • JSR CORPORATION (Japon)
  • KYOTO UNIVERSITY (Japon)
Inventeur(s)
  • Ishikawa Hidefumi
  • Kanahara Masaaki
  • Mizuuchi Motoaki
  • Yamaguchi Tetsuji
  • Matsuzawa Shuichi

Abrégé

HLL region) contain respectively the amino acid sequences represented by SEQ ID NOS: 4-6, or a fragment of the antibody.

Classes IPC  ?

  • C07K 16/40 - Immunoglobulines, p.ex. anticorps monoclonaux ou polyclonaux contre des enzymes
  • A61K 39/395 - Anticorps; Immunoglobulines; Immunsérum, p.ex. sérum antilymphocitaire
  • A61P 35/00 - Agents anticancéreux

6.

RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Numéro d'application 18270256
Statut En instance
Date de dépôt 2021-11-15
Date de la première publication 2024-04-18
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X]. A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X].

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

7.

METHOD FOR PRODUCING CHROMATOGRAPHY CARRIER, METHOD FOR PRODUCING CHROMATOGRAPHY COLUMN, AND CHROMATOGRAPHY CARRIER

      
Numéro d'application 18551755
Statut En instance
Date de dépôt 2022-03-15
Date de la première publication 2024-04-11
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kobayashi, Kunihiko
  • Akiyama, Minato
  • Inoue, Yukiya
  • Kikuchi, Masahiro

Abrégé

A chromatography carrier may exhibit high liquid permeability and an excellent pressure-resistant characteristic during liquid passage. A chromatography carrier production method may include: (1) providing a solid phase support, the solid phase support being formed of porous particles on which a ligand has or has not been immobilized; and (2) subjecting the solid phase support to sieve classification, the coefficient of variation of the volume particle size distribution of the porous particles when a ligand has been immobilized being adjusted to 1% to 22%. The skewness of the volume particle size distribution of the porous particles when a ligand has been immobilized may be adjusted to −0.1 to 5.

Classes IPC  ?

  • B01J 20/285 - Absorbants ou adsorbants poreux à base de polymères
  • B01D 15/20 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives au conditionnement de la matière adsorbante ou absorbante
  • B01D 15/22 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à la structure de la colonne
  • B01J 20/30 - Procédés de préparation, de régénération ou de réactivation

8.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING RESIST PATTERN FILM, AND METHOD FOR MANUFACTURING PLATED SHAPED ARTICLE

      
Numéro d'application 18372176
Statut En instance
Date de dépôt 2023-09-25
Date de la première publication 2024-04-11
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Satou, Keiichi
  • Ishii, Akira
  • Tomita, Takuya
  • Koumura, Kazuhiko

Abrégé

An embodiment of the present invention relates to a photosensitive resin composition, a method for manufacturing a resist pattern film, and a method for manufacturing a plated shaped article; the photosensitive resin composition comprises (A) an alkali-soluble resin, (B1) a polymerizable compound having at least two (meth)acryloyl groups and at least two hydroxy groups in one molecule and having a ring structure, (C) a photoradical polymerization initiator, (D) at least one compound selected from the group consisting of a nitrogen-containing heterocyclic compound (d1) containing two or more nitrogen atoms, a thiol compound (d2), and a polymerization inhibitor (d3), and (F) a solvent.

Classes IPC  ?

  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/031 - Composés organiques non couverts par le groupe

9.

POLYPROPYLENE-BASED RESIN FOAMED PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application JP2023036097
Numéro de publication 2024/075742
Statut Délivré - en vigueur
Date de dépôt 2023-10-03
Date de publication 2024-04-11
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Kitahara Taizo
  • Chiba Takuya

Abrégé

Polypropylene-based resin foamed particles (1) each include a foamed layer formed of a polypropylene-based resin composition. The polypropylene-based resin composition forming the foamed layer contains a polypropylene-based resin and rubbery bodies (G) containing an ethylene propylene-based rubber. The rubbery bodies are dispersed in the polypropylene-based resin. The foamed particles (1) have a melting point Tm of 130-162°C.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

10.

CORE MEMBER

      
Numéro d'application 18285420
Statut En instance
Date de dépôt 2022-03-29
Date de la première publication 2024-04-04
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Hisamatsu, Katsunori
  • Hashimoto, Keiichi

Abrégé

A core member used for a laminate in which polyurethane foam is laminated on the core member made of a thermoplastic resin expanded beads molded article, such that the molded article in which expanded beads having through holes are mutually fused, an average porosity of the expanded beads molded article is between 10% and 25%, and on a surface of the expanded beads molded article, a ratio of a total opening area of the through hole portions of the expanded beads to a surface area of the expanded beads molded article is between 2% and 5%, an average opening area of the through hole portions of the expanded beads is between 5 mm2 and 20 mm2, and the ratio of the number of through hole portions having an opening area of 2 mm2 or more to the number of through hole portions of the expanded beads is 60% or less.

Classes IPC  ?

  • B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
  • B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
  • B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
  • B32B 27/40 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyuréthanes
  • C08J 9/228 - Façonnage d'articles en mousse

11.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION AND POLYMER

      
Numéro d'application JP2023033535
Numéro de publication 2024/070728
Statut Délivré - en vigueur
Date de dépôt 2023-09-14
Date de publication 2024-04-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Katagiri,takashi
  • Abe,shinya
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abrégé

The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition which is capable of forming a film that has excellent bending resistance; a composition; and a polymer. This method for producing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on the resist underlayer film that has been formed in the application step; and a step for performing etching using the resist pattern as a mask. With respect to this method for producing a semiconductor substrate, the resist underlayer film-forming composition contains a solvent and a polymer that has a structural unit represented by formula (1). (In formula (1), Ar1represents a divalent group that has an aromatic ring having 5 to 40 ring members; and X1represents a divalent group represented by formula (i).) (In formula (i), R1and R2 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, or these groups combine with each other to form a C3-20 divalent alicyclic hydrocarbon group together with the carbon atom to which these are bonded; and * and ** each denote a bonding hand in formula (1).)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 8/02 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols de cétones

12.

RESIST PATTERN FORMATION METHOD

      
Numéro d'application JP2023032396
Numéro de publication 2024/070535
Statut Délivré - en vigueur
Date de dépôt 2023-09-05
Date de publication 2024-04-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

The purpose of the present invention is to provide a method for forming a resist pattern having excellent pattern rectangularity. Provided is a method for forming a resist pattern, the method comprising: a step for applying a resist underlayer film-forming composition onto a substrate directly or indirectly; a step for forming a metal-containing resist film on the resist underlayer film formed by the resist underlayer film-forming composition application step; a step for exposing the metal-containing resist film to light; a step for preparing a developer solution; and a step for dissolving a light-exposed part in the metal-containing resist film that has been exposed to light using the developer solution to form a resist pattern.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 232/08 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocyclique contenant des cycles condensés
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/20 - Exposition; Appareillages à cet effet

13.

RESIST UNDERLAYER FILM-FORMING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application JP2023033814
Numéro de publication 2024/070786
Statut Délivré - en vigueur
Date de dépôt 2023-09-19
Date de publication 2024-04-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada,shuhei
  • Dei,satoshi
  • Hayashi,yuya
  • Akita,shunpei
  • Yoneda,eiji

Abrégé

Provided are: a resist underlayer film-forming composition which enables the formation of a resist underlayer film having excellent resist pattern rectangularity when the composition is exposed to extreme ultraviolet ray; and a method for manufacturing a semiconductor substrate using the composition. The resist underlayer film-forming composition is a composition for forming an underlayer film for a resist film which is subjected to the exposure to extreme ultraviolet ray, the composition comprising a compound having a iodine atom and a solvent, in which the compound having a iodine atom is a polymer having a repeating unit represented by formula (1), an aromatic-ring-containing compound having a iodine atom and having a molecular weight of 750 to 3000 inclusive, or a combination thereof, and the content ratio of the compound having a iodine atom in components other than the solvent in the underlayer film-forming composition is 50% by mass or more. (In formula (1), Ar1represents a bivalent group having a 5- to 40-membered aromatic ring; R0represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; and R1represents a monovalent organic group having 1 to 40 carbon atoms; in which at least one of Ar1, R0and R1 has a iodine atom.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

14.

SEARCHING METHOD FOR FUNCTIONAL MOLECULE FOR CAUSING RESPONSE IN CELL

      
Numéro d'application JP2023035799
Numéro de publication 2024/071424
Statut Délivré - en vigueur
Date de dépôt 2023-09-29
Date de publication 2024-04-04
Propriétaire
  • KEIO UNIVERSITY (Japon)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Saya, Hideyuki
  • Kato, Shoichi
  • Ikemoto, Atsushi

Abrégé

Provided is a vector or vector set for analyzing the function of a functional molecule, said vector or vector set comprising: a polynucleotide that codes for an expression system of a candidate molecule for the functional molecule; a polynucleotide that codes for a translation control sequence or a transcription control sequence which is activated by a response in a given cell; and a polynucleotide that codes for a reporter system which is operably linked with the translation control sequence or the transcription control sequence. Also provided is a searching method for a functional molecule which causes a response in a cell, said method comprising: introducing the vector or vector set into a cell; and measuring expression in the cell of a reporter system included in the vector or vector set.

Classes IPC  ?

  • C12N 5/10 - Cellules modifiées par l'introduction de matériel génétique étranger, p.ex. cellules transformées par des virus
  • C12N 15/09 - Technologie d'ADN recombinant
  • C12N 15/113 - Acides nucléiques non codants modulant l'expression des gènes, p.ex. oligonucléotides anti-sens
  • C12N 15/12 - Gènes codant pour des protéines animales
  • C12N 15/55 - Hydrolases (3)
  • C12N 15/63 - Introduction de matériel génétique étranger utilisant des vecteurs; Vecteurs; Utilisation d'hôtes pour ceux-ci; Régulation de l'expression
  • C12N 15/86 - Vecteurs viraux

15.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION

      
Numéro d'application 18509611
Statut En instance
Date de dépôt 2023-11-15
Date de la première publication 2024-03-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yoneda, Eiji
  • Abe, Takayoshi
  • Miyauchi, Hiroyuki

Abrégé

A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.

Classes IPC  ?

  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

16.

ANTIBACTERIAL COMPOSITION AND METHOD FOR DETERMINING ADMINISTRATION OF SAID ANTIBACTERIAL COMPOSITION TO SUBJECT

      
Numéro d'application JP2023034260
Numéro de publication 2024/063132
Statut Délivré - en vigueur
Date de dépôt 2023-09-21
Date de publication 2024-03-28
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Masuda Kanae
  • Aoto Yoshimasa
  • Isayama Jun
  • Ishikawa Hidefumi
  • Goji Hiroshi
  • Watanabe Kazuto
  • Kawasaki Hiroshi
  • Ito Yoshihiro
  • Amagai Masayuki

Abrégé

Provided are an antibacterial composition containing bacteria that exhibit antibacterial properties against bacteria having a positive correlation with a SCORAD value indicating the severity of atopic dermatitis, and a method for determining the administration of said antibacterial composition to a subject. The present invention comprises an antibacterial composition that contains resident skin bacteria as an active ingredient, the antibacterial composition acting against pro-inflammatory bacteria (excluding the resident skin bacteria).

Classes IPC  ?

  • A61K 35/74 - Bactéries
  • A61P 17/00 - Médicaments pour le traitement des troubles dermatologiques
  • C12Q 1/689 - Produits d’acides nucléiques utilisés dans l’analyse d’acides nucléiques, p.ex. amorces ou sondes pour la détection ou l’identification d’organismes pour les bactéries

17.

RADIATION-SENSITIVE COMPOSITION, RESIST-PATTERN-FORMING METHOD, RADIATION-SENSITIVE ACID GENERATOR AND POLYMER

      
Numéro d'application JP2023026224
Numéro de publication 2024/057701
Statut Délivré - en vigueur
Date de dépôt 2023-07-18
Date de publication 2024-03-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Taniguchi, Takuhiro
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Nishikori, Katsuaki

Abrégé

This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), R5is a group obtained by removing (m+n+2) hydrogen atoms from a monocyclic or condensed aromatic hydrocarbon ring having r carbon atoms. L−33 −or –COO−. r is an integer of 6 to 14. A1is a single bond, –O–, –S– or –NR3–. R1is a hydrogen atom or a monovalent organic group. X1is a chlorine atom, a bromine atom or an iodine atom. m is an integer of 1 to (r–2). N is an integer of 0 to (r–3). R2is a substituted or unsubstituted monovalent hydrocarbon. M+ is a monovalent cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 8/12 - Hydrolyse
  • C08F 20/22 - Esters contenant des halogènes
  • C08F 20/38 - Esters contenant du soufre
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/12 - Esters des alcools ou des phénols monohydriques
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

18.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023028119
Numéro de publication 2024/057751
Statut Délivré - en vigueur
Date de dépôt 2023-08-01
Date de publication 2024-03-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori,katsuaki
  • Kiriyama,kazuya
  • Taniguchi,takuhiro
  • Kinoshita,natsuko

Abrégé

Provided are: a radioactive-ray-sensitive resin composition that can exhibit sufficient levels of sensitivity and CDU performance when a next-generation technology is applied to the composition; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises an onium salt compound containing a structure represented by formula (1), a resin containing a structure unit (I) having a phenolic hydroxyl group or a group capable of providing a phenolic hydroxyl group by the action of an acid, and a solvent. (In formula (1), Rf1and Rf2each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a fluorine atom, or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms; R1, R2and R3122 each independently represent an integer of 0 to 4; X1and X2each independently represent an oxygen atom or a sulfur atom: L represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 10 carbon atoms; R4and R5each independently represent a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; at least one of R4and R5represents a monovalent aromatic-ring-containing organic group containing a 5- to 40-membered aromatic ring; and Z+ represents a monovalent radioactive-ray-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 317/24 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples estérifiés
  • C08F 8/12 - Hydrolyse
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/12 - Esters des alcools ou des phénols monohydriques
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

19.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Numéro d'application 18235924
Statut En instance
Date de dépôt 2023-08-21
Date de la première publication 2024-03-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori, Katsuaki
  • Kawai, Takahiro

Abrégé

A radiation-sensitive resin composition contains: a first polymer having a first structural unit including a partial structure obtained by substituting a hydrogen atom of a carboxy group or of a phenolic hydroxy group with an acid-labile group represented by formula (1); and a compound including: a monovalent radiation-sensitive onium cation moiety including an aromatic ring structure which includes a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion moiety. Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic ring structure having 5 to 30 ring atoms; R 1 and R2 each independently represent a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to an ethereal oxygen atom in the carboxy group or an oxygen atom in the phenolic hydroxy group. A radiation-sensitive resin composition contains: a first polymer having a first structural unit including a partial structure obtained by substituting a hydrogen atom of a carboxy group or of a phenolic hydroxy group with an acid-labile group represented by formula (1); and a compound including: a monovalent radiation-sensitive onium cation moiety including an aromatic ring structure which includes a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion moiety. Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic ring structure having 5 to 30 ring atoms; R 1 and R2 each independently represent a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to an ethereal oxygen atom in the carboxy group or an oxygen atom in the phenolic hydroxy group.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles

20.

FOAMABLE PARTICLE PRODUCTION METHOD

      
Numéro d'application JP2023030797
Numéro de publication 2024/057883
Statut Délivré - en vigueur
Date de dépôt 2023-08-25
Date de publication 2024-03-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Inoue Tsubasa
  • Hira Akinobu

Abrégé

The present invention pertains to a method for producing foamable particles by using, as a base resin material, a mixture obtained by mixing a polypropylene-based resin A which is not a recovered material and a polypropylene-based resin B which is a recovered object of a post consumption material. Provided is a foamable particle production method that makes it possible to produce foamable particles in which variability in the foam expansion rate and reduction in the closed-cell rate are suppressed, and to have excellent appearance for a foamable particle molded body obtained by molding said foamable particles. In the foamable particle production method: a mixture obtained by mixing a polypropylene-based resin A having a melting point of 130-155°C and a polypropylene-based resin B which is a recovered object of a post consumption material is used as a base resin material; in the mixture, the blended proportion of the polypropylene-based resin A is 40-97 wt% and the blended proportion of the polypropylene-based resin B is 3-60 wt% (the total of the polypropylene-based resin A and the polypropylene-based resin B is 100 wt%); the melting point difference (melting point of the polypropylene-based resin B - melting point of the polypropylene-based resin A) between the polypropylene-based resin A and the polypropylene-based resin B is 10-30°C; the ash content of the polypropylene-based resin B is 5 wt% or less with respect to 100 wt% of the polypropylene-based resin B; and, regarding a melt peak indicated in a DSC curve obtained through thermal flux differential scanning calorimetry of the polypropylene-based resin B, the difference (Tme-Tms) between an extrapolated melting start temperature (Tms) and an extrapolated melting ending temperature (Tme) of the melt peak is 30°C or higher.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage

21.

EXPANDED POLYPROPYLENE RESIN BEADS AND EXPANDED POLYPROPYLENE RESIN BEADS MOLDED ARTICLE

      
Numéro d'application 18240196
Statut En instance
Date de dépôt 2023-08-30
Date de la première publication 2024-03-14
Propriétaire JSP Corporation (Japon)
Inventeur(s)
  • Yamasaki, Shobu
  • Ito, Yosuke

Abrégé

An expanded polypropylene resin bead contains an inorganic pigment, a hindered amine compound, and an ultraviolet light absorber. The ultraviolet light absorber contains an ultraviolet light absorber A having a molecular weight of 360 or more, and a content of the ultraviolet light absorber A in the expanded polypropylene resin bead is 0.010% by mass or more and 2% by mass or less. An expanded polypropylene resin beads molded article is produced by in-mold molding of the expanded polypropylene resin bead.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
  • C08J 9/232 - Façonnage d'articles en mousse par frittage de particules expansibles
  • C08K 13/02 - Ingrédients organiques et inorganiques

22.

MANUFACTURING METHOD OF DISPLAY AND DISPLAY

      
Numéro d'application 18275741
Statut En instance
Date de dépôt 2022-01-31
Date de la première publication 2024-03-14
Propriétaire
  • JSR CORPORATION (Japon)
  • Mattrix Technologies, Inc (USA)
Inventeur(s)
  • Katsui, Hiromitsu
  • Liu, Bo
  • Lemaitre, Maxime

Abrégé

Provided is a manufacturing method of a display including a vertical organic light-emitting transistor in which a wider light-emitting area is secured while manufacturing time and manufacturing cost are suppressed. In the manufacturing method of the display including the vertical organic light-emitting transistor, a gate electrode layer of the vertical organic light-emitting transistor and one of current-carrying electrode layers of a thin-film transistor connected to the gate electrode layer of the vertical organic light-emitting transistor are formed integrally in the same layer.

Classes IPC  ?

  • H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
  • H10K 59/12 - Affichages à OLED à matrice active [AMOLED]

23.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATE, AND ELECTRONIC COMPONENT

      
Numéro d'application JP2023027900
Numéro de publication 2024/053282
Statut Délivré - en vigueur
Date de dépôt 2023-07-31
Date de publication 2024-03-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kawashima Naoyuki
  • Satonaka Eri
  • Anabuki Shoma

Abrégé

One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, and an electronic device. The polymer has a repeating structural unit represented by formula (1). [R11represents a divalent substituted or unsubstituted nitrogen-containing heteroaromatic ring, R12independently represent a divalent substituted or unsubstituted aromatic hydrocarbon group, R13represents a C1-20 hydrocarbon group to which at least one group represented by formula (a1) other than the two R12is bonded, X1independently represent -O-, -S-, or -N(R14)-, * represents a bond to R13, and ** represents a bond with another structural unit in polymer (A).]

Classes IPC  ?

  • C08G 65/34 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques
  • B32B 27/30 - Produits stratifiés composés essentiellement de résine synthétique comprenant une résine acrylique
  • C08F 12/34 - Monomères contenant plusieurs radicaux aliphatiques non saturés
  • C08F 290/06 - Polymères prévus par la sous-classe
  • C08K 5/00 - Emploi d'ingrédients organiques
  • C08L 25/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
  • C08L 101/02 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés

24.

ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING

      
Numéro d'application 18233932
Statut En instance
Date de dépôt 2023-08-15
Date de la première publication 2024-03-14
Propriétaire
  • Inpria Corporation (USA)
  • JSR Corporation (Japon)
Inventeur(s)
  • Kasahara, Kazuki
  • Cardineau, Brian J.
  • Jiang, Kai
  • Meyers, Stephen T.
  • Narasimhan, Amrit N.
  • Voss, Matthew

Abrégé

A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C—Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.

Classes IPC  ?

25.

POLYMER, COMPOSITION, CURED PRODUCT, AND DISPLAY ELEMENT

      
Numéro d'application JP2023032771
Numéro de publication 2024/053722
Statut Délivré - en vigueur
Date de dépôt 2023-09-08
Date de publication 2024-03-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Murakami Yoshitaka
  • Kashishita Kouji

Abrégé

One embodiment of the present invention relates to a polymer, a composition, a cured product, or a display element. The composition comprises a polymer having a structural unit represented by formula (1). [In formula (1), A is a divalent group having an aromatic heterocyclic ring, B is a divalent group having an aromatic ring or an aromatic heterocyclic ring and having an alkali-soluble group, and X is independently -O-, -NH- or -S-.]

Classes IPC  ?

  • C08L 101/02 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés
  • C08G 65/34 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques
  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants
  • G03F 7/032 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques avec des liants
  • G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels

26.

COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

      
Numéro d'application JP2023029521
Numéro de publication 2024/048271
Statut Délivré - en vigueur
Date de dépôt 2023-08-15
Date de publication 2024-03-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada, Yuya
  • Kao, Shen-Yuan

Abrégé

Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obtain a polished surface having a high reflective property. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a liquid medium, (C) an oxidizing agent, and (D) a nitrogen-containing hetrocyclic compound. The absolute value of the zeta potential of the (A) component of the composition for chemical mechanical polishing is 10 mV or more. When the content of the (C) component is noted as Mc (mass%) and the content of the (D) component is noted as Md (mass%), Mc/Md is 10 to 200.

Classes IPC  ?

  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • C09K 3/14 - Substances antidérapantes; Abrasifs

27.

FOAM PARTICLE, AND FOAM PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2023029853
Numéro de publication 2024/048327
Statut Délivré - en vigueur
Date de dépôt 2023-08-18
Date de publication 2024-03-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Yamasaki Shobu
  • Ito Yosuke

Abrégé

122 each independently represent a hydrocarbon group or a hydrocarbon group bonded via an oxygen atom.)

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

28.

MICROBIAL CARRIER FOR FOOD WASTE TREATMENT

      
Numéro d'application JP2023030990
Numéro de publication 2024/048520
Statut Délivré - en vigueur
Date de dépôt 2023-08-28
Date de publication 2024-03-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Iwayama Yoshihiro
  • Sunaga Keisuke

Abrégé

A microbial carrier for a food waste treatment, wherein: a base resin constituting the microbial carrier contains a thermoplastic starch and/or an aliphatic polyester; the biodegradability of the microbial carrier in a biodegradability test according to JIS K6953 is 60% or more; and the shape of the microbial carrier is columnar.

Classes IPC  ?

  • C08J 9/04 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable
  • C12N 1/00 - Micro-organismes, p.ex. protozoaires; Compositions les contenant; Procédés de culture ou de conservation de micro-organismes, ou de compositions les contenant; Procédés de préparation ou d'isolement d'une composition contenant un micro-organisme; Leurs milieux de culture

29.

Polyethylene Resin Foamed Particle, and Method for Producing Same

      
Numéro d'application 18549026
Statut En instance
Date de dépôt 2022-03-03
Date de la première publication 2024-03-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Hayashi, Tatsuya
  • Hira, Akinobu

Abrégé

Polyethylene resin foamed particles according to the present invention are obtained by using, as a base material resin, a non-crosslinked linear low density polyethylene. The linear low density polyethylene is a copolymer of ethylene and an α-olefin having 8 carbon atoms, and has a melt flow rate and a density in specified ranges. The foamed particle has an average foam size within a specified range, and has a crystal structure that causes an intrinsic peak and a high temperature peak to appear in the first round of a DSC curve obtained under a specific condition. The total fusion heat quantity (ΔH1) determined from the sum total of a fusion heat quantity (ΔHi) of the intrinsic peak and the fusion heat quantity (ΔHh) of the high temperature peak is within a specified range.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • B29C 44/34 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage - Eléments constitutifs, détails ou accessoires; Opérations auxiliaires

30.

MANUFACTURING METHOD FOR CONDUCTIVE FILM, LIQUID DISPERSION, RADIATION-SENSITIVE RESIN COMPOSITION, AND LIGHT EMITTING ELEMENT

      
Numéro d'application JP2023029520
Numéro de publication 2024/048270
Statut Délivré - en vigueur
Date de dépôt 2023-08-15
Date de publication 2024-03-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ichinohe,daigo
  • Katsui,hiromitsu
  • Yasuda,hiroyuki

Abrégé

The present invention provides a manufacturing method for a conductive film that has high conductivity and makes it possible to evenly fix a conductive carbon material over the entirety of a conductive film formation region. The present invention also provides a manufacturing method wherein it is possible to efficiently remove a dispersant that has remained in the conductive film, as well as a polymer that is in a section where a radiation-sensitive resin composition has not been subjected to light exposure. The present invention includes: a step (A) in which a liquid dispersion is applied on a main surface of a substrate and dried to form a first film, said liquid dispersion including a carbon material and a first polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (B) in which a radiation-sensitive resin composition is applied on the first film to form a second film, said radiation-sensitive resin composition having an acid generating agent and a second polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (C) in which the second film is exposed to light; and a step (D) in which, after the step (C), the first polymer and the second polymer are removed by developing.

Classes IPC  ?

  • B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
  • B05D 1/36 - Applications successives de liquides ou d'autres matériaux fluides, p.ex. sans traitement intermédiaire
  • B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
  • B05D 3/10 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par d'autres moyens chimiques
  • B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
  • C09D 5/24 - Peintures électriquement conductrices
  • C09D 179/08 - Polyimides; Polyesterimides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • H05B 33/28 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition ou la disposition du matériau conducteur utilisé comme électrode des électrodes translucides
  • H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]

31.

ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING

      
Numéro d'application US2023030198
Numéro de publication 2024/039626
Statut Délivré - en vigueur
Date de dépôt 2023-08-15
Date de publication 2024-02-22
Propriétaire
  • INPRIA CORPORATION (USA)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Kasahara, Kazuki
  • Cardineau, Brian J.
  • Jiang, Kai
  • Meyers, Stephen T.
  • Narasimhan, Amrit K.
  • Voss, Matthew

Abrégé

A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C-Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
  • G03F 7/38 - Traitement avant le dépouillement selon l'image, p.ex. préchauffage
  • G03F 7/42 - Elimination des réserves ou agents à cet effet
  • G03F 7/20 - Exposition; Appareillages à cet effet

32.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM FORMING COMPOSITION

      
Numéro d'application JP2023025616
Numéro de publication 2024/034311
Statut Délivré - en vigueur
Date de dépôt 2023-07-11
Date de publication 2024-02-15
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hirasawa,kengo
  • Takada,kazuya
  • Ozaki,yuki
  • Kimata,hironori
  • Serizawa,ryuichi

Abrégé

Provided are a semiconductor substrate production method and film forming composition which are capable of forming a film having excellent etching resistance and excellent embedding properties. This semiconductor substrate production method involves a step for applying a film forming composition onto a substrate, wherein the film forming composition contains a metal compound, an aromatic compound, and a solvent; the aromatic compound has an aromatic hydrocarbon ring structure and a partial structure represented by formula (1) below; and the aromatic hydrocarbon ring structure has 6 or more carbon atoms. [Formula 1] (In formula (1), X is a group represented by formula (i), (ii), (iii), or (iv) below; and symbols * are sites binding respectively to adjacent two carbon atoms constituting the aromatic hydrocarbon ring structure.) [Formula 2] (In formula (i), R1is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R2is a monovalent organic group having 1-20 carbon atoms. In formula (ii), R3is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R4is a monovalent organic group having 1-20 carbon atoms. In formula (iii), R5is a monovalent organic group having 1-20 carbon atoms. In formula (iv), R6 is a monovalent organic group having 1-20 carbon atoms.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs

33.

COMPOSITION, COMPOUND, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application JP2023025665
Numéro de publication 2024/029292
Statut Délivré - en vigueur
Date de dépôt 2023-07-12
Date de publication 2024-02-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Abe,shinya
  • Katagiri,takashi
  • Naganawa,atsuko
  • Yamada,shuhei
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abrégé

The purpose of the present invention is to provide a method for manufacturing a semiconductor substrate using a composition capable of forming a film having excellent etching resistance; and to provide said composition. The composition according to the present invention comprises a solvent and a compound having a partial structure represented by formula (1) below, wherein the molecular weight of the compound is greater than or equal to 600. (In formula (1), Ar1is a substituted or unsubstituted monovalent aromatic group having 5-30 ring members. n is an integer of 1-3. Ar2is a portion of a substituted or unsubstituted aromatic ring structure having 5-60 ring members and is formed together with two adjacent carbon atoms in formula (1). X1 represents a single bond or a divalent linking group .Each * is a bonding site with the two adjacent carbon atoms constituting the substituted or unsubstituted aromatic ring having 5-60 ring members. ** is a bonding site with a portion other than the partial structure represented by formula (1) in the abovementioned compound. r is an integer of 0-4.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C07C 13/58 - Anthracènes complètement ou partiellement hydrogénés
  • C07C 13/62 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à plus de trois cycles condensés
  • C07C 13/66 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à plus de trois cycles condensés le système cyclique condensé ne contenant que quatre cycles
  • C07C 39/17 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques sans autre insaturation que celle des cycles aromatiques contenant d'autres cycles en plus des cycles aromatiques à six chaînons
  • C07D 487/04 - Systèmes condensés en ortho
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

34.

METHOD FOR PRODUCING CARRIER FOR CHROMATOGRAPHY, AND CARRIER FOR CHROMATOGRAPHY

      
Numéro d'application JP2023027099
Numéro de publication 2024/029394
Statut Délivré - en vigueur
Date de dépôt 2023-07-25
Date de publication 2024-02-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Inoue, Yukiya
  • Miyajima, Ken
  • Kamide, Tomoyuki
  • Noguchi, Hiroshi
  • Nakamura, Satoshi

Abrégé

The present invention provides a carrier which is for chromatography, which has a large dynamic binding capacity with respect to an antibody or a fragment thereof, and through which a protein ligand is unlikely to leak even when the carrier is repeatedly used for isolation of an antibody. Provided is a method for producing a carrier for chromatography, said method comprising the following steps A-1 and B. (Step A-1) A step for immobilizing, to porous particles, one or more ligands selected from protein A, protein G, protein L, and analogues thereof. (Step B) A step for reacting the porous particles to which the one or more ligands have been immobilized in the step A-1 and a compound which has at least one ligand reactive group selected from groups represented by -C(=O)-O-C(=O)-, carbodiimide groups, and cyclic ether groups.

Classes IPC  ?

  • C07K 1/22 - Chromatographie d'affinité ou techniques analogues basées sur des procédés d'absorption sélective
  • C07K 16/00 - Immunoglobulines, p.ex. anticorps monoclonaux ou polyclonaux
  • B01D 15/38 - Adsorption sélective, p.ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction spécifique non couverte par un ou plusieurs des groupes , p.ex. chromatographie d'affinité, chromatographie d'échange par ligand ou chromatographie chirale
  • B01J 20/24 - Composés macromoléculaires d'origine naturelle, p.ex. acides humiques ou leurs dérivés
  • B01J 20/281 - Absorbants ou adsorbants spécialement adaptés pour la chromatographie préparative, analytique ou de recherche
  • B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
  • C07K 14/31 - Peptides ayant plus de 20 amino-acides; Gastrines; Somatostatines; Mélanotropines; Leurs dérivés provenant de bactéries provenant de Micrococcaceae (F) provenant de Staphylococcus (G)

35.

THERAPEUTIC AGENT FOR OVARIAN CLEAR CELL CARCINOMA

      
Numéro d'application JP2023028482
Numéro de publication 2024/029608
Statut Délivré - en vigueur
Date de dépôt 2023-08-03
Date de publication 2024-02-08
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Ookubo Aki
  • Chiyoda Tatsuyuki
  • Yoshimura Takuma

Abrégé

Provided is a therapeutic agent that is effective for the treatment of ovarian clear cell carcinoma. The therapeutic agent for ovarian clear cell carcinoma contains a proteasome inhibitor as an active ingredient. Moreover, said proteasome inhibitor is a substance that reversibly or irreversibly binds to the 20s β5 subunit of a proteasome and inhibits chymotrypsin-like activity. Furthermore, said proteasome is 26s proteasome. The content ratio of the proteasome inhibitor in the therapeutic agent for ovarian clear cell carcinoma is 80 mass% or greater, 90 mass% or greater, or 100 mass%.

Classes IPC  ?

  • A61K 45/00 - Préparations médicinales contenant des ingrédients actifs non prévus dans les groupes
  • A61P 15/00 - Médicaments pour le traitement des troubles génitaux ou sexuels; Contraceptifs
  • A61P 35/00 - Agents anticancéreux
  • A61K 31/69 - Composés du bore

36.

POLYETHYLENE-BASED RESIN MULTILAYER FOAM SHEET AND METHOD FOR PRODUCING SAME

      
Numéro d'application 18258874
Statut En instance
Date de dépôt 2021-10-01
Date de la première publication 2024-02-08
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Kakuta, Hirotoshi
  • Fujita, Mikidai
  • Katsuyama, Naoya

Abrégé

A polyethylene-based resin multilayer foam sheet may include a polyethylene-based resin foam layer containing a polyethylene-based resin (A) as a base resin, and a conductive layer laminated on at least one side of the foam layer. The conductive layer contains: a mixed resin of one or more polyethylenes (B) of low-density polyethylenes and/or linear low-density polyethylenes and an ethylene-based copolymer (C) having a structural unit derived from ethylene and a structural unit derived from a monomer having a polar group; and conductive carbon. The conductive carbon blended in the conductive layer may be in a range of from 3 to 15 wt. %. The difference, TmB−TmC, between the melting point TmB of the polyethylene (B) and the melting point TmC of the ethylene-based copolymer (C) each contained in the conductive layer may be in a range of from 30 to 80° C.

Classes IPC  ?

  • B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
  • B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
  • B32B 27/30 - Produits stratifiés composés essentiellement de résine synthétique comprenant une résine acrylique
  • B32B 37/15 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche qui est fabriquée et immédiatement stratifiée avant d'atteindre un état stable, p.ex. dans lesquels une couche est extrudée et stratifiée à l'état semi-pâteux
  • B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux

37.

POLYAMIDE-BASED RESIN FOAM PARTICLE AND POLYAMIDE-BASED RESIN FOAM PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2023027244
Numéro de publication 2024/029407
Statut Délivré - en vigueur
Date de dépôt 2023-07-25
Date de publication 2024-02-08
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Suenaga Katsuyuki

Abrégé

Provided are polyamide-based resin foam particles comprising a polyamide-based resin as a base material resin, the foam particles containing carbon nanotubes, wherein the closed-cell ratio of the foam particles is 70% or more.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

38.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND RADIATION-SENSITIVE ACID GENERATOR

      
Numéro d'application JP2023027258
Numéro de publication 2024/024801
Statut Délivré - en vigueur
Date de dépôt 2023-07-25
Date de publication 2024-02-01
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Miyao, Kensuke
  • Okazaki, Satoshi

Abrégé

This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). L1represents a group having a (thio)acetal ring or the like. W1represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rfrepresents a fluorine atom, or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1are same or different, and a plurality of R2are same or different. When d represents 2, a plurality of W1are same or different, and a plurality of b are same or different. M+ represents a monovalent cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 381/12 - Composés sulfonium
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

39.

POLYAMIDE RESIN FOAM PARTICLES

      
Numéro d'application JP2023026977
Numéro de publication 2024/024716
Statut Délivré - en vigueur
Date de dépôt 2023-07-24
Date de publication 2024-02-01
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Yamanaka Ryo

Abrégé

The present invention provides polyamide resin foam particles which use, as a base material resin, a mixed resin of a polyamide resin A and a polyamide resin B, wherein: the polyamide resin A is an aliphatic polyamide; the polyamide resin B is a xylylene group-containing polyamide resin; and the mass ratio ((polyamide resin A):(polyamide resin B)) of the polyamide resin A to the polyamide resin B is 97:3 to 60:40.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08L 77/00 - Compositions contenant des polyamides obtenus par des réactions créant une liaison amide carboxylique dans la chaîne principale; Compositions contenant des dérivés de tels polymères

40.

POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND MOLDED ARTICLE THEREOF

      
Numéro d'application 18217651
Statut En instance
Date de dépôt 2023-07-03
Date de la première publication 2024-01-25
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Masumoto, Hisashi

Abrégé

An expanded bead of polypropylene-based resin formed with a through hole that is defined by an inner peripheral surface and that has an average hole diameter of 1 mm or less. The expanded bead has a closed cell content of 85% or more, an average cell diameter of 50 to 300 μm and an inner surface portion that extends along the inner peripheral surface that has an average cell diameter of 5 to 150 μm which is smaller than the average cell diameter of the expanded bead.

Classes IPC  ?

  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles

41.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATE, AND ELECTRONIC COMPONENT

      
Numéro d'application 18373415
Statut En instance
Date de dépôt 2023-09-27
Date de la première publication 2024-01-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kawashima, Naoyuki
  • Yamashita, Yuutoku
  • Anabuki, Shoma
  • Kameyama, Takeru
  • Nishino, Kenta
  • Shinohara, Arata
  • Fujitomi, Shintarou

Abrégé

One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: wherein X's are each independently —O—, —S—, or —N(R3)—, R3 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one selected from an oxygen atom and a sulfur atom, R1 is a divalent organic group, and R2 is a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring; One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: wherein X's are each independently —O—, —S—, or —N(R3)—, R3 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one selected from an oxygen atom and a sulfur atom, R1 is a divalent organic group, and R2 is a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring; —Y  (a) wherein Y is a group containing an ethylenically unsaturated double bond and having 3 to 50 carbon atoms, an unsubstituted or substituted aromatic hydrocarbon group having 6 to 50 carbon atoms, an unsubstituted or substituted aliphatic hydrocarbon group having 3 to 50 carbon atoms, or an unsubstituted nitrogen-containing heteroaromatic ring, and when the aromatic hydrocarbon group or the aliphatic hydrocarbon group has a substituent, the substituent is a group other than a hydroxy group.

Classes IPC  ?

  • C08G 61/12 - Composés macromoléculaires contenant d'autres atomes que le carbone dans la chaîne principale de la macromolécule
  • C08G 65/48 - Polymères modifiés par post-traitement chimique
  • C08K 5/3415 - Cycles à cinq chaînons
  • C08K 5/14 - Peroxydes
  • C08K 3/36 - Silice
  • H05K 1/03 - Emploi de matériaux pour réaliser le substrat

42.

PHOTOCATALYTIC SYNTHESIS OF ALPHA, BETA UNSATURATED CARBONYL COMPOUNDS AND THEIR INTERMEDIATES

      
Numéro d'application US2022037417
Numéro de publication 2024/019698
Statut Délivré - en vigueur
Date de dépôt 2022-07-18
Date de publication 2024-01-25
Propriétaire
  • JSR CORPORATION (Japon)
  • NEW IRIDIUM INC. (USA)
Inventeur(s)
  • Suguri, Takuya
  • Maruyama, Youichirou
  • Lim, Chern-Hooi
  • Qian, Gang
  • Liu, Yue
  • Cope, Elana

Abrégé

Described herein is a process of producing α,β unsaturated acids and amides and their intermediates via a photocatalytic reaction in the presence of a photocatalyst, oxygen, and optionally a solvent. The photocatalyst contains a tungstic acid or a salt of a tungstic acid. The process is simple, clean, and energy efficient, and provides good conversion, good selectivity, good turnover, and easy purification of end products.

Classes IPC  ?

  • C07C 51/367 - Préparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par des réactions ne créant pas de groupes carboxyle par introduction de groupes fonctionnels contenant l'oxygène lié uniquement par une liaison simple
  • C07C 51/377 - Préparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par des réactions ne créant pas de groupes carboxyle par hydrogénolyse de groupes fonctionnels
  • C07C 407/00 - Préparation de composés peroxy
  • C07C 409/04 - Composés peroxy le groupe —O—O— étant lié à un atome de carbone, qui n'est pas substitué de plus par des atomes d'oxygène, et à un atome d'hydrogène, c. à d. hydroperoxydes l'atome de carbone étant acyclique
  • C07C 57/04 - Acide acrylique; Acide méthacrylique
  • C07C 59/01 - Composés saturés ne comportant qu'un groupe carboxyle et contenant des groupes hydroxyle ou O-métal

43.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Numéro d'application 18374041
Statut En instance
Date de dépôt 2023-09-28
Date de la première publication 2024-01-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Maruyama, Ken
  • Abe, Takayoshi
  • Sakai, Kazunori

Abrégé

A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.

Classes IPC  ?

  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
  • G03F 7/004 - Matériaux photosensibles

44.

METHOD FOR PRODUCING FOAM BLOW MOLDED BODY, AND FOAM BLOW MOLDED BODY

      
Numéro d'application JP2023026245
Numéro de publication 2024/019042
Statut Délivré - en vigueur
Date de dépôt 2023-07-18
Date de publication 2024-01-25
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Gomibuchi Masahiro
  • Noro Jinichiro

Abrégé

The present invention provides a method for producing a foam blow molded body, the method comprising a step for blow molding a foamed parison that is obtained by foaming a mixed resin of a polyolefin resin (A) and an olefin-based thermoplastic elastomer (B). With respect to this method for producing a foam blow molded body, the polyolefin resin (A) is composed of a branched homopolypropylene (a1) and a linear block polypropylene (a2); the mass ratio ((a1):(a2)) of the branched homopolypropylene (a1) to the linear block polypropylene (a2) is 50:50 to 93:7; the olefin-based thermoplastic elastomer (B) is a hydrogenated product of a triblock copolymer that is composed of a crystalline olefin polymer block and a polymer block of a conjugated diene compound; and the added amount of the olefin-based thermoplastic elastomer (B) relative to 100 parts by mass of the polyolefin resin (A) is 20 parts by mass to 40 parts by mass in the mixed resin.

Classes IPC  ?

  • C08J 9/04 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 49/04 - Moulage par extrusion-soufflage

45.

METHOD FOR MANUFACTURING LAMINATE

      
Numéro d'application 18033741
Statut En instance
Date de dépôt 2021-10-08
Date de la première publication 2024-01-18
Propriétaire JSP Corporation (Japon)
Inventeur(s)
  • Hisamatsu, Katsunori
  • Hashimoto, Keiichi

Abrégé

The present invention relates to a method for producing a laminate, wherein the laminate is obtained by integrally laminating an expanded beads molded article (a) composed of expanded beads A and having interconnected voids and an expanded beads molded article (b) composed of expanded particles B and having interconnected voids, the difference [Pb−Pa] between the voidage (Pa) of the expanded beads molded article (a) and the voidage (Pb) of the expanded beads molded article (b) is 5% or more, and the expanded beads A and the expanded beads B satisfy the following (1) to (3): (1) a difference [dB−dA] between an average hole diameter (dA) of the through-holes of the expanded beads (A) and an average hole diameter (dB) of the through-holes of the expanded beads (B) is 0.3 mm or more and 2 mm or less; (2) the expanded beads (B) have an average outer diameter DB of 3.5 mm or more and 5 mm or less; (3) a difference [DB−DA] between an average outer diameter DA of the expanded beads (A) and an average outer diameter DB of the expanded beads (B) is −0.3 mm or more and 2 mm or less.

Classes IPC  ?

  • B29C 44/20 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage pour la fabrication d'objets de longueur indéfinie
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
  • B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse

46.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Numéro d'application 18372163
Statut En instance
Date de dépôt 2023-09-25
Date de la première publication 2024-01-18
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Maruyama, Ken
  • Abe, Takayoshi
  • Sakai, Kazunori

Abrégé

A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. An exposed portion of the exposed metal-containing resist film is dissolved with a developer to form a resist pattern.

Classes IPC  ?

  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
  • H01L 21/311 - Gravure des couches isolantes
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

47.

THERMOPLASTIC RESIN EXPANDED BEAD AND MOLDED ARTICLE OF THERMOPLASTIC RESIN EXPANDED BEADS

      
Numéro d'application 18349308
Statut En instance
Date de dépôt 2023-07-10
Date de la première publication 2024-01-18
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura, Takumi
  • Ohta, Hajime

Abrégé

A thermoplastic resin expanded bead and a molded article composed of the thermoplastic resin expanded beads are provided. The expanded bead includes a foam layer containing a thermoplastic resin. The expanded bead has a columnar shape, and has two or more and eight or less through-holes penetrating in the axial direction thereof. A ratio Ct/A of a total cross-sectional area Ct of the through-holes to a cross-sectional area A of the expanded bead in a cut surface obtained by cutting the expanded bead along a plane perpendicular to the axial direction at the center in the axial direction is 0.02 or more and 0.15 or less.

Classes IPC  ?

48.

COMPOSITION FOR 3D PRINTING SUPPORT OR 3D CELL CULTURE SUPPORT

      
Numéro d'application JP2023024928
Numéro de publication 2024/014377
Statut Délivré - en vigueur
Date de dépôt 2023-07-05
Date de publication 2024-01-18
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Akiyama, Minato
  • Kobayashi, Kunihiko

Abrégé

Provided is a composition that has exceptional salt resistance and is useful as a 3D printing support or a 3D cell culture support. A composition for a 3D printing support or a 3D cell culture support, the composition containing component (A) and component (B). (A) A polymer having structural units represented by formula (1). (B) An aqueous medium. [In formula (1), R1and R2each independently represent a hydrogen atom or a C1-10 alkyl group, or R1and R2 may bond to each other to form a C3-10 ring structure.]

Classes IPC  ?

  • C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
  • B33Y 10/00 - Procédés de fabrication additive
  • B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
  • B33Y 80/00 - Produits obtenus par fabrication additive
  • C08F 126/00 - Homopolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétéroc
  • C08L 39/00 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple; Compositions contenant des dérivés de tels polymères
  • C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains

49.

METHOD FOR PRODUCING TWO-DIMENSIONAL SMALL INTESTINAL ORGANOIDS HAVING VILLUS STRUCTURE

      
Numéro d'application 18039534
Statut En instance
Date de dépôt 2021-12-03
Date de la première publication 2024-01-11
Propriétaire
  • KEIO UNIVERSITY (Japon)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Sato, Toshiro
  • Sugimoto, Shinya
  • Arai, Kazuya

Abrégé

A method for producing a two-dimensional small intestinal organoid having a villus structure, the method including a step 1 of culturing a cell derived from a small intestinal epithelium in an extracellular matrix to obtain a three-dimensional small intestinal organoid, a step 2 of dispersing the three-dimensional small intestinal organoid and monolayer culturing on the extracellular matrix to obtain a two-dimensional small intestinal organoid, and a step 3 of further culturing the two-dimensional small intestinal organoid while letting a culture medium of the two-dimensional small intestinal organoid to flow so that the two-dimensional small intestinal organoid forms a villus structure.

Classes IPC  ?

  • G01N 33/50 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique
  • C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains

50.

COMPOSITION FOR FORMING COATING LAYER OF OPTICAL FIBER AND CURED LAYER THEREOF, OPTICAL FIBER HAVING CURED LAYER, AND USE THEREOF

      
Numéro d'application 18252057
Statut En instance
Date de dépôt 2021-11-17
Date de la première publication 2024-01-11
Propriétaire Japan Fine Coatings Co., Ltd. (Japon)
Inventeur(s)
  • Nakajima, Takumi
  • Shinohara, Noriyasu

Abrégé

Provided is a composition for forming a coating layer of an optical fiber, the composition comprising a compound having a structure represented by the following formula (I): Provided is a composition for forming a coating layer of an optical fiber, the composition comprising a compound having a structure represented by the following formula (I): *—NH—CO—N(R1)—R2—SiR3n—(OR4)3-n  (I) Provided is a composition for forming a coating layer of an optical fiber, the composition comprising a compound having a structure represented by the following formula (I): *—NH—CO—N(R1)—R2—SiR3n—(OR4)3-n  (I) wherein, R1 is a hydrogen atom, an alkyl group, or an aryl group, R2 is a methylene group optionally substituted with a halogen, a C2-10 alkylene group that may have a heteroatom or an atomic group having a heteroatom between carbon atoms and may optionally be substituted with a halogen, or a phenylene group that may have a substituent, R3 is an alkyl group, and R4 is a C1-6 alkyl group, * being a bond and n indicating an integer of 0 or more and 2 or less.

Classes IPC  ?

51.

FOAM PARTICLE MOULDED ARTICLE, SOLE CUSHION, AND METHOD FOR PRODUCING FOAM PARTICLES

      
Numéro d'application 18368441
Statut En instance
Date de dépôt 2023-09-14
Date de la première publication 2024-01-04
Propriétaire JSP Corporation (Japon)
Inventeur(s)
  • Takagi, Shota
  • Oikawa, Masaharu

Abrégé

The present invention relates to an in-mold expanded beads molded article of expanded beads of an olefin thermoplastic elastomer, a cushion for shoe sole, and a method of producing expanded beads provided with through-holes and composed of a block copolymer of a polyethylene block and an ethylene/α-olefin copolymer block, and with respect to the in-mold expanded beads molded article of expanded beads of an olefin thermoplastic elastomer, a voidage of the expanded beads molded article is 5 to 40%; a density of the expanded beads molded article is 30 to 150 g/L; and a flexural modulus of the olefin thermoplastic elastomer that constitutes the expanded beads molded article is 10 to 100 MPa.

Classes IPC  ?

  • C08J 9/232 - Façonnage d'articles en mousse par frittage de particules expansibles
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08L 53/00 - Compositions contenant des copolymères séquencés possédant au moins une séquence d'un polymère obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carbone; Compositions contenant des dérivés de tels polymères
  • C08J 9/228 - Façonnage d'articles en mousse

52.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Numéro d'application 18025989
Statut En instance
Date de dépôt 2021-08-03
Date de la première publication 2024-01-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains one or two or more onium salts containing an organic acid anion moiety and an onium cation moiety, a compound having a structure in which an alkoxycarbonyl group is bonded to a nitrogen atom, and a solvent, wherein at least part of the organic acid anion moiety in the onium salt contains an iodine-substituted aromatic ring structure, and at least part of the onium cation moiety contains a fluorine-substituted aromatic ring structure.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables

53.

COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application 18218193
Statut En instance
Date de dépôt 2023-07-05
Date de la première publication 2024-01-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kasai, Tatsuya
  • Furusawa, Ayaka
  • Sakai, Kazunori
  • Serizawa, Ryuichi

Abrégé

A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms. A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 77/04 - Polysiloxanes
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

54.

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR RESIN FILM HAVING PATTERN, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT SUBSTRATE

      
Numéro d'application JP2023019497
Numéro de publication 2024/004462
Statut Délivré - en vigueur
Date de dépôt 2023-05-25
Date de publication 2024-01-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ito Hirokazu
  • Ogawa Taku
  • Ando Mitsuka
  • Tatara Ryoji

Abrégé

A negative photosensitive resin composition comprising: a polymer (A); a crosslinking agent (B); and a photo-cation generator (C), wherein the polymer (A) has a structural unit represented by formula (a2) and has, at a terminal, a reactive group Y that reacts with the crosslinking agent (B) by the action of cations generated from the photo-cation generator (C) through light irradiation, and the photo-cation generator (C) includes a photo-cation generator (C1) that generates, through light irradiation, an acid having a pKa(1) of at least -3 and at most 3 as calculated using a Gaussian function based on the pKa of methanesulfonic acid in an aqueous solution of 25°C.

Classes IPC  ?

  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
  • C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

55.

COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, POLYMER, AND METHOD FOR MANUFACTURING POLYMER

      
Numéro d'application 18244460
Statut En instance
Date de dépôt 2023-09-11
Date de la première publication 2023-12-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nakatsu, Hiroki
  • Yamada, Shuhei
  • Abe, Shinya
  • Tsuji, Takashi
  • Ueda, Kanako
  • Miyauchi, Hiroyuki

Abrégé

A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom. A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom.

Classes IPC  ?

  • C08F 28/06 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison au soufre ou par un hétérocyc par un hétérocycle contenant du soufre
  • C08F 24/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un hétérocycle contenant de l'oxygène

56.

COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, POLYMER, AND METHOD FOR MANUFACTURING POLYMER

      
Numéro d'application 18239373
Statut En instance
Date de dépôt 2023-08-29
Date de la première publication 2023-12-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada, Shuhei
  • Abe, Shinya
  • Tsuji, Takashi
  • Ueda, Kanako
  • Nakatsu, Hiroki
  • Miyauchi, Hiroyuki

Abrégé

A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2). A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

Classes IPC  ?

  • C08G 61/02 - Composés macromoléculaires contenant uniquement des atomes de carbone dans la chaîne principale de la molécule, p.ex. polyxylylènes
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables

57.

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN FORMATION METHOD

      
Numéro d'application JP2023013354
Numéro de publication 2023/248569
Statut Délivré - en vigueur
Date de dépôt 2023-03-30
Date de publication 2023-12-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya Takuya
  • Nishikori Katsuaki
  • Kiriyama Kazuya
  • Matsumura Yuushi
  • Terada Nozomi

Abrégé

Provided is a radiation-sensitive resin composition comprising: a polymer which has a first structural unit represented by formula (1) and of which the solubility in a developing solution is changed by the action of an acid; a radiation-sensitive acid generator; and an acid diffusion regulator which has a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 20/10 - Esters
  • G03F 7/004 - Matériaux photosensibles

58.

METHOD FOR PRODUCING POLYAMIDE-BASED RESIN MULTI-STAGE-EXPANDED BEADS

      
Numéro d'application 18030561
Statut En instance
Date de dépôt 2021-10-13
Date de la première publication 2023-12-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Otsuka, Tetsu

Abrégé

A method for producing polyamide-based resin multi-stage expanded beads includes an internal pressure applying step of placing polyamide-based resin expanded beads in a pressure-resistant container, impregnating the polyamide-based resin expanded beads with a physical blowing agent in the pressure-resistant container to apply internal pressure higher than atmospheric pressure; and a heating and foaming step of heating and expanding the polyamide-based resin expanded beads to which internal pressure is applied obtained in the internal pressure applying step to obtain polyamide-based resin multi-stage expanded beads having apparent density lower than that of polyamide-based resin expanded beads used in the internal pressure applying step, in the internal pressure applying step, polyamide-based resin expanded beads in a wet state having a water content of 1% or more being impregnated with the physical blowing agent at a temperature higher than change-point temperature of storage modulus of the polyamide-based resin expanded beads in a wet state.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
  • C08J 9/228 - Façonnage d'articles en mousse

59.

PHOTOSENSITIVE RESIN COMPOSITION, PATTERNED RESIN FILM, METHOD FOR PRODUCING PATTERNED RESIN FILM, AND SEMICONDUCTOR CIRCUIT SUBSTRATE

      
Numéro d'application JP2023014565
Numéro de publication 2023/243199
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-12-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ogawa Taku
  • Nakafuji Shin-Ya
  • Ando Mitsuka
  • Kanno Kimiyuki
  • Tatara Ryoji
  • Ito Hirokazu

Abrégé

An embodiment of the present invention relates to a photosensitive resin composition, a patterned resin film, a method for producing a patterned resin film, and a semiconductor circuit substrate. The photosensitive resin composition comprises: a polymer (A) that is at least one selection from the group consisting of polyimides and polyimide precursors, that contains a structural unit (a) containing a structural unit derived from an acid anhydride represented by formula (1) and contains a diamine-derived structural unit (b), and that has, e.g., a maleimide group, at a terminal on the polymer; (B) a photopolymerization initiator; and (D) a solvent. [In formula (1), L represents a single bond, etc.; R1to R3represents a hydrogen atom, etc., or represents an alkylene group formed by the bonding of the R1and R2(or R3) in the same ring with each other; n1and n2represent an integer from 0 to 3; and Y1represents a structure given by (Y1)(-Ar1-), etc.]

Classes IPC  ?

  • G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques
  • G03F 7/20 - Exposition; Appareillages à cet effet

60.

PHOTOSENSITIVE RESIN COMPOSITION, RESIN FILM HAVING PATTERN, METHOD FOR PRODUCING RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT BOARD

      
Numéro d'application JP2023014564
Numéro de publication 2023/243198
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-12-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Okuda Ryuichi
  • Doi Takashi
  • Tatara Ryoji
  • Ito Hirokazu

Abrégé

One aspect of the present invention relates to: a photosensitive resin composition; a resin film having a pattern; a method for producing a resin film having a pattern; and a semiconductor circuit board. The photosensitive resin composition contains: (A) a polymer which is at least one type selected from the group consisting of a polyimide and a polyimide precursor and which contains a structural unit (a) including a structural unit derived from an acid anhydride represented by formula (1) and a structural unit (b) derived from a diamine; (B) a naphthoquinonediazide compound; (C1) a crosslinkable compound having a methylol group or an alkoxymethyl group; and (D) a solvent. [In formula (1): L denotes a single bond or the like; R1to R3each denote a hydrogen atom or the like, or denote an alkylene group formed by bonding RR1and R2(or R3) of the same ring; n1to n2each denote an integer between 0 and 3; and Y1denotes a structure represented by a formula such as (Y1)(-Ar1-).]

Classes IPC  ?

  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

61.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND

      
Numéro d'application 18198971
Statut En instance
Date de dépôt 2023-05-18
Date de la première publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Sakano, Nozomi

Abrégé

A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1). R1 is a monovalent hydrocarbon group having 1 to 20 carbon atoms; R2 and R3 are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms, or R2 and R3 taken together represent a cyclic structure having 3 to 20 ring atoms; R4 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms and L1 is a divalent linking group having 1 to 40 carbon atoms, or R4 and L1 taken together represent a group including a heterocyclic structure having 3 to 20 ring atoms; Rf1 and Rf2 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms. A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1). R1 is a monovalent hydrocarbon group having 1 to 20 carbon atoms; R2 and R3 are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms, or R2 and R3 taken together represent a cyclic structure having 3 to 20 ring atoms; R4 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms and L1 is a divalent linking group having 1 to 40 carbon atoms, or R4 and L1 taken together represent a group including a heterocyclic structure having 3 to 20 ring atoms; Rf1 and Rf2 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • C08F 220/36 - Esters contenant de l'azote contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
  • C08F 220/38 - Esters contenant du soufre
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C07C 381/12 - Composés sulfonium
  • C07D 211/62 - Atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p.ex. radicaux ester ou nitrile liés en position 4
  • C07D 211/60 - Atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p.ex. radicaux ester ou nitrile
  • C07D 207/16 - Atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p.ex. radicaux ester ou nitrile
  • C07D 327/06 - Cycles à six chaînons
  • C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
  • C07D 405/12 - Composés hétérocycliques contenant à la fois un ou plusieurs hétérocycles comportant des atomes d'oxygène comme uniques hétéro-atomes du cycle et un ou plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
  • C07D 493/10 - Systèmes condensés en spiro

62.

METHOD FOR PRODUCING VERTICAL ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE, DISPLAY

      
Numéro d'application JP2023020441
Numéro de publication 2023/238765
Statut Délivré - en vigueur
Date de dépôt 2023-06-01
Date de publication 2023-12-14
Propriétaire
  • JSR CORPORATION (Japon)
  • MATTRIX TECHNOLOGIES, INC. (USA)
Inventeur(s)
  • Katsui,hiromitsu
  • Liu,bo
  • Lemaitre,maxime
  • Yasuda,hiroyuki

Abrégé

The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.

Classes IPC  ?

  • H10K 50/30 - Transistors organiques émetteurs de lumière
  • C01B 32/174 - Dérivatisation; Solubilisation dans les solvants; Dispersion dans les solvants
  • C08L 79/08 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
  • H10K 71/60 - Formation de régions ou de couches conductrices, p. ex. d’électrodes
  • H10K 85/10 - Polymères ou oligomères organiques
  • H10K 85/20 - Composés de carbone, p. ex. nanotubes de carbone ou fullerènes

63.

EXOSOME COMPLEX AND MANUFACTURING METHOD THEREOF

      
Numéro d'application JP2023020906
Numéro de publication 2023/238837
Statut Délivré - en vigueur
Date de dépôt 2023-06-06
Date de publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hori Miyuki
  • Nakagawa Fumiko
  • Shinoda Tatsuya
  • Hayase Yoji

Abrégé

Provided are an exosome complex capable of achieving higher therapeutic effects than conventional products, and a manufacturing method thereof. This exosome complex contains an exosome and affinity molecules for a target cell, said affinity molecules including a hydrophobic moiety anchoring to the membrane surface of the exosome and an affinity moiety for the target cell, wherein 5 or more on average of the affinity molecules are contained per exosome.

Classes IPC  ?

  • C12N 5/07 - Cellules animales ou tissus animaux
  • C12N 5/0775 - Cellules souches mésenchymateuses; Cellules souches dérivées du tissu adipeux
  • C12N 15/115 - Aptamères, c. à d. acides nucléiques liant spécifiquement une molécule cible avec une haute affinité sans s'y hybrider
  • C12N 15/88 - Introduction de matériel génétique étranger utilisant des procédés non prévus ailleurs, p.ex. co-transformation utilisant la micro-encapsulation, p.ex. utilisant des vésicules liposomiques

64.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND

      
Numéro d'application 18239399
Statut En instance
Date de dépôt 2023-08-29
Date de la première publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Kaneko, Tetsurou

Abrégé

A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; R2, R3, and R4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R5 represents a monovalent organic group having 1 to 20 carbon atoms; and L represents a single bond or a divalent organic group having 1 to 20 carbon atoms. A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; R2, R3, and R4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R5 represents a monovalent organic group having 1 to 20 carbon atoms; and L represents a single bond or a divalent organic group having 1 to 20 carbon atoms.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/004 - Matériaux photosensibles
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C07C 69/54 - Esters d'acide acrylique; Esters d'acide méthacrylique
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C08F 220/24 - Esters contenant un halogène contenant des radicaux perhaloalkyle
  • C08F 220/22 - Esters contenant un halogène
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • C08F 220/34 - Esters contenant de l'azote

65.

RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Numéro d'application 18266061
Statut En instance
Date de dépôt 2021-11-15
Date de la première publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive composition includes: a polymer (A) including a structural unit having a hydroxyl group bonded to an aromatic ring; and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), in which, at least one compound selected from the group consisting of the polymer (A) and the acid-generating compound includes a radiation-sensitive onium cation structure [X] having two or more of at least one substituent β selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded); and an organic anion structure [Y] having an iodo group, in the same compound or different compounds.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables

66.

METHOD FOR PRODUCING VERTICAL ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE, DISPLAY

      
Numéro d'application 17836389
Statut En instance
Date de dépôt 2022-06-09
Date de la première publication 2023-12-14
Propriétaire
  • JSR CORPORATION (Japon)
  • Mattrix Technologies, Inc (USA)
Inventeur(s)
  • Katsui, Hiromitsu
  • Liu, Bo
  • Lemaitre, Maxime
  • Yasuda, Hiroyuki

Abrégé

The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.

Classes IPC  ?

  • H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
  • H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
  • H01L 51/52 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED) - Détails des dispositifs

67.

METHOD FOR PRODUCING ELECTROCONDUCTIVE FILM, TOUCH PANEL, DISPLAY PANEL

      
Numéro d'application JP2023016108
Numéro de publication 2023/238530
Statut Délivré - en vigueur
Date de dépôt 2023-04-24
Date de publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Katsui,hiromitsu
  • Yasuda,hiroyuki

Abrégé

Provided is a method for producing an electroconductive film that has high electroconductivity and is capable of evenly fixing an electroconductive carbon material over the entirety of an electroconductive film formation region. The method includes a step (A) for applying an organic resin material that contains a polymer having a hydrocarbon group to a base material and forming an organic resin layer, a step (B) for applying a liquid dispersion that contains a dispersant and carbon nanotubes to the organic resin layer and forming a coating film after step (A), a step (C) for drying the coating film after step (B), and a step (D) for implementing dispersant extraction to remove the dispersant from the coating film after step (C).

Classes IPC  ?

  • B05D 1/36 - Applications successives de liquides ou d'autres matériaux fluides, p.ex. sans traitement intermédiaire
  • B05D 3/10 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par d'autres moyens chimiques
  • B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
  • B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers

68.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER, AND COMPOUND

      
Numéro d'application 18235420
Statut En instance
Date de dépôt 2023-08-18
Date de la première publication 2023-12-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Sakano, Nozomi
  • Nemoto, Ryuichi

Abrégé

A radiation-sensitive resin composition includes a resin including a structural unit represented by formula (1), a radiation-sensitive acid generator, and a solvent. R1 is a hydrogen atom, a fluorine atom, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R4 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R5 and R6 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R7 and R8 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R9 and R10 each independently represent a monovalent organic group having 1 to 10 carbon atoms, or the like. A radiation-sensitive resin composition includes a resin including a structural unit represented by formula (1), a radiation-sensitive acid generator, and a solvent. R1 is a hydrogen atom, a fluorine atom, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R4 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R5 and R6 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R7 and R8 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R9 and R10 each independently represent a monovalent organic group having 1 to 10 carbon atoms, or the like.

Classes IPC  ?

  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
  • C07D 493/10 - Systèmes condensés en spiro
  • C07D 317/24 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples estérifiés
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

69.

POLYOLEFIN RESIN FOAM PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application JP2023018806
Numéro de publication 2023/234078
Statut Délivré - en vigueur
Date de dépôt 2023-05-19
Date de publication 2023-12-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Nohara Tokunobu

Abrégé

This method for manufacturing polyolefin resin foam particles includes: a dispersion step for dispersing polyolefin resin particles in an aqueous medium; a foaming agent addition step for adding a physical foaming agent to inside an airtight container; and a foaming step for impregnating the resin particles with the physical foaming agent inside the airtight container, followed by releasing the resin particles from the airtight container together with the aqueous medium, and causing the resin particles to foam, thereby producing foam particles having an apparent density of 10 kg/m3to 80 kg/m3. The physical foaming agent contains a hydrofluoroolefin. The added amount of the hydrofluoroolefin in the foaming agent addition step is 10 to 30 parts by mass with respect to 100 parts by mass of resin particles.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

70.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018515
Numéro de publication 2023/228841
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2) (excluding a compound corresponding to the first onium salt compound), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4represents a monovalent organic group having 1 to 40 carbon atoms; one of Rf21and Rf22represents a fluorine atom and the other represents a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar represents a monovalent organic group having a 5- to 40-membered aromatic ring; R5to R8122 each independently represent an integer of 1 to 6; and X represents a single bond or a bivalent hetero-atom-containing group.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • C09K 3/00 - Substances non couvertes ailleurs

71.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018519
Numéro de publication 2023/228843
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and an alcohol-type solvent having a boiling point of 90°C or higher. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, or a monovalent hydrocarbon group; one of Rf11and Rf1211 + represents a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

72.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018526
Numéro de publication 2023/228845
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity and LWR performance can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms or a group having such a structure that in which a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; one of Rf11and Rf1211 +represents a monovalent radiation-sensitive onium cation.) (In formula (2), R422 + represents a monovalent organic cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

73.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND

      
Numéro d'application 18135838
Statut En instance
Date de dépôt 2023-04-18
Date de la première publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Matsumura, Yuushi
  • Kinoshita, Natsuko

Abrégé

A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group. A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 136/16 - Homopolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées contenant des éléments autres que le carbone ou l'hydrogène contenant des halogènes
  • C07C 69/653 - Esters d'acide acrylique; Esters d'acide méthacrylique; Esters d'acide acrylique halogéné; Esters d'acide méthacrylique halogéné

74.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018516
Numéro de publication 2023/228842
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when forming a resist pattern with a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition contains: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit that has an acid-dissociable group; and a solvent. (In formula (1), R1is a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group including a divalent heteroatom-containing group between the carbon-carbon bonds of the aforementioned hydrocarbon group. R2and R3are each a hydrogen atom or a monovalent hydrocarbon group. One of Rf11and Rf1211 +is a monovalent radiation-sensitive onium cation.) (In formula (2), R4is a monovalent organic group that includes a cyclic structure and has 3-40 carbon atoms. Rf21and Rf2222 + is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

75.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018530
Numéro de publication 2023/228847
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition with which it is possible to form a resist film that is capable of exhibiting sensitivity, LWR performance, water repellency, and development defect inhibitory ability at satisfactory levels; and a pattern formation method. A radiation-sensitive resin composition comprising an onium salt compound represented by formula (1), a first resin comprising structural units that have an acid-dissociable group, a second resin that has a higher fluorine content than the first resin and has an acid-dissociable group, and a solvent. (In formula (1), R1is a group comprising a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group comprising a divalent hetero atom-containing group between a carbon-carbon bond of said hydrocarbon group. Each of R2and R3is an independent hydrogen atom or a monovalent hydrocarbon group. When a plurality of R2s and a plurality of R3s exist, the plurality of R2s are the same as or different from each other and the plurality of R3s are the same as or different from each other. One of Rf11and Rf12is the fluorine atom and the other one thereof is the fluorine atom or a monovalent fluorinated hydrocarbon group. When a plurality of Rf11s and a plurality of Rf12s exist, the plurality of Rf11s are the same as or different from each other and the plurality of Rf1211 + is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

76.

RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RADIATION SENSITIVE ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT

      
Numéro d'application JP2023006542
Numéro de publication 2023/223624
Statut Délivré - en vigueur
Date de dépôt 2023-02-22
Date de publication 2023-11-23
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Taniguchi,takuhiro
  • Nishikori,katsuaki
  • Kinoshita,natsuko
  • Kiriyama,kazuya

Abrégé

The present invention provides a radiation sensitive resin composition, a pattern forming method, etc., capable of achieving, at sufficient levels, sensitivity, LWR performance, and process window when next-generation technology is applied. This radiation sensitive resin composition comprises a resin that includes a repeating unit A having an acid dissociable group, an onium salt that has an organic acid anion moiety and an onium cation moiety, and a solvent, wherein the onium salt includes at least one group selected from the group consisting of a pentafluorosulfanyl group, a pentafluorosulfanyloxy group, and a pentafluorosulfanylthio group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

77.

POLYOLEFIN RESIN FOAM PARTICLES, METHOD FOR PRODUCING SAME, AND MOLDED ARTICLE OF POLYOLEFIN RESIN FOAM PARTICLES

      
Numéro d'application 18040853
Statut En instance
Date de dépôt 2021-05-25
Date de la première publication 2023-11-02
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Yamasaki, Shobu

Abrégé

A polyolefin-based resin expanded bead contains a base resin containing a polyolefin-based resin as a main component, carbon black, and a flame-retardant. A bulk density of the polyolefin-based resin expanded beads is 10 to 100 kg/m3. A blending amount of the carbon black is 0.5 to 10 parts by mass based on 100 parts by mass of the base resin. The flame-retardant contains a hindered amine-based compound represented by the following general formula (I), and a blending amount of the hindered amine-based compound is 0.01 to 1 parts by mass based on 100 parts by mass of the base resin. A polyolefin-based resin expanded bead contains a base resin containing a polyolefin-based resin as a main component, carbon black, and a flame-retardant. A bulk density of the polyolefin-based resin expanded beads is 10 to 100 kg/m3. A blending amount of the carbon black is 0.5 to 10 parts by mass based on 100 parts by mass of the base resin. The flame-retardant contains a hindered amine-based compound represented by the following general formula (I), and a blending amount of the hindered amine-based compound is 0.01 to 1 parts by mass based on 100 parts by mass of the base resin.

Classes IPC  ?

78.

PREPREG, METAL-CLAD LAMINATE, AND PRINTED WIRING BOARD

      
Numéro d'application 18023760
Statut En instance
Date de dépôt 2021-08-19
Date de la première publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Miyaki, Nobuyuki
  • Kawashima, Naoyuki
  • Yamashita, Yuutoku
  • Anabuki, Shouma
  • Nishino, Kenta
  • Kameyama, Takeru

Abrégé

Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3). Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3).

Classes IPC  ?

  • H05K 1/03 - Emploi de matériaux pour réaliser le substrat
  • B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
  • C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
  • H05K 3/46 - Fabrication de circuits multi-couches

79.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application 18215863
Statut En instance
Date de dépôt 2023-06-29
Date de la première publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5). A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/38 - Traitement avant le dépouillement selon l'image, p.ex. préchauffage
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
  • C07C 309/24 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné contenant des cycles aromatiques à six chaînons
  • C07C 309/06 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'halogène ou des groupes nitro ou nitroso liés au squelette carboné
  • C07C 381/12 - Composés sulfonium
  • C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
  • C07C 309/19 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné saturé contenant des cycles
  • C07C 303/32 - Préparation d'esters ou d'amides d'acides sulfuriques; Préparation d'acides sulfoniques ou de leurs esters, halogénures, anhydrides ou amides de sels d'acides sulfoniques
  • G03F 7/30 - Dépouillement selon l'image utilisant des moyens liquides

80.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023002997
Numéro de publication 2023/203827
Statut Délivré - en vigueur
Date de dépôt 2023-01-31
Date de publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

Provided are a radiation-sensitive resin composition and a pattern formation method by which sensitivity, critical dimension uniformity (CDU) performance, and development residue performance can be exhibited on a sufficient level when next-generation technology is applied. The radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit A having an acid-dissociable group, and a structural unit D having a phenolic hydroxy group; and a solvent. The structural unit D has a phenolic hydroxy group and an alkyl group on the same aromatic ring, and in the aromatic ring of the structural unit D, the alkyl group is bonded to a carbon atom adjacent to the carbon atom to which the phenolic hydroxy group is bonded. The radiation-sensitive resin composition further satisfies at least one condition selected from the group consisting of the following conditions 1 and 2. Condition 1: The resin is a radiation-sensitive acid-generating resin further including a structural unit B including an organic acid anion moiety, and an onium cation moiety including an aromatic ring structure having a fluorine atom. Condition 2: An onium salt (excluding the radiation-sensitive acid-generating resin) including an organic acid anion moiety and an onium cation including an aromatic ring structure having a fluorine atom is further provided.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

81.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION

      
Numéro d'application JP2023014519
Numéro de publication 2023/204078
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Sakai,kazunori
  • Kasai,tatsuya
  • Furusawa,ayaka
  • Nii,akitaka

Abrégé

Provided are a method for producing a semiconductor substrate and a silicon-containing composition which are capable of forming a silicon-containing film with good resist pattern collapse suppression properties and good film thickness uniformity. This method involves a step for directly or indirectly coating a substrate with a silicon-containing composition, a step for coating, with a resist film forming composition, the silicon-containing film formed in the silicon-containing composition coating step, an exposure step for irradiating, with radioactive rays, the resist film formed in the resist film forming composition coating step, and a step for at least developing the exposed resist film, wherein the silicon-containing composition contains a silicon-containing compound, a polymer having a structural unit represented by formula (1) below, and a solvent, and the content ratio of the silicon-containing compound accounting for components other than the solvent in the silicon-containing composition is 50%-99.9% by mass. (In formula (1), RA1represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. RA2 is a monovalent organic group having 1-20 carbon atoms.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

82.

SILICON-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application 18198954
Statut En instance
Date de dépôt 2023-05-18
Date de la première publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Seko, Tomoaki
  • Anno, Yusuke
  • Nii, Akitaka
  • Nemoto, Ryuichi
  • Nishimura, Souta

Abrégé

A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less. A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.

Classes IPC  ?

  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
  • C08L 83/04 - Polysiloxanes
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/20 - Exposition; Appareillages à cet effet

83.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Numéro d'application 18209751
Statut En instance
Date de dépôt 2023-06-14
Date de la première publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nosaka, Naoya
  • Ehara, Kengo
  • Nakatsu, Hiroki
  • Dobashi, Masato
  • Miyauchi, Hiroyuki

Abrégé

A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2). A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/38 - Traitement avant le dépouillement selon l'image, p.ex. préchauffage
  • H01L 21/311 - Gravure des couches isolantes

84.

CONJUGATE AND PHOTOIMMUNOTHERAPY

      
Numéro d'application 18044728
Statut En instance
Date de dépôt 2021-09-07
Date de la première publication 2023-10-19
Propriétaire
  • JSR CORPORATION (Japon)
  • NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japon)
Inventeur(s)
  • Sato, Kazuhide
  • Yukawa, Hiroshi
  • Matsuoka, Kohei
  • Ueya, Yuuichi
  • Shimada, Mibuko
  • Ono, Kenichiro

Abrégé

Provided is a drug useful for photoimmunotherapy. Specifically, provided is a conjugate including an antibody molecule, a particle having an average particle diameter of 100 nm or less, and a photosensitive portion. In the conjugate, the particle having an average particle diameter of 100 nm or less is linked to the antibody molecule, and at least one of the antibody molecule or the particle is bound to the photosensitive portion. The photosensitive portion is a portion showing increase of hydrophobicity when irradiated with a light beam having a wavelength of from 500 nm to 900 nm or a portion containing a phthalocyanine skeleton.

Classes IPC  ?

  • A61K 47/68 - Préparations médicinales caractérisées par les ingrédients non actifs utilisés, p.ex. les supports ou les additifs inertes; Agents de ciblage ou de modification chimiquement liés à l’ingrédient actif l’ingrédient non actif étant chimiquement lié à l’ingrédient actif, p.ex. conjugués polymère-médicament l’ingrédient non actif étant un agent de modification l’agent de modification étant un anticorps, une immunoglobuline ou son fragment, p.ex. un fragment Fc
  • A61K 41/00 - Préparations médicinales obtenues par traitement de substances par énergie ondulatoire ou par rayonnement corpusculaire
  • A61K 49/18 - Préparations de contraste pour la résonance magnétique nucléaire (RMN); Préparations de contraste pour l'imagerie par résonance magnétique (IRM) caractérisées par un aspect physique particulier, p.ex. émulsions, microcapsules, liposomes

85.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND

      
Numéro d'application JP2023014339
Numéro de publication 2023/199851
Statut Délivré - en vigueur
Date de dépôt 2023-04-07
Date de publication 2023-10-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Naganawa,atsuko
  • Yamada,shuhei
  • Katagiri,takashi
  • Abe,shinya
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abrégé

Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C07C 13/547 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à trois cycles condensés un cycle au moins n'étant pas un cycle à six chaînons, les autres cycles étant au plus des cycles à six chaînons
  • C07C 33/36 - Alcools polyhydroxyliques contenant des cycles aromatiques à six chaînons et d'autres cycles
  • C07C 39/17 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques sans autre insaturation que celle des cycles aromatiques contenant d'autres cycles en plus des cycles aromatiques à six chaînons
  • C07C 39/23 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques contenant des cycles aromatiques à six chaînons et d'autres cycles avec une insaturation autre que celle des cycles aromatiques
  • C07C 43/215 - Ethers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons avec une insaturation autre que celle des cycles aromatiques à six chaînons
  • C07D 207/335 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
  • C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
  • C07D 333/18 - Radicaux substitués par des hétéro-atomes, autres que les halogènes, liés par des liaisons simples par des atomes de soufre
  • C07F 5/02 - Composés du bore
  • C07F 7/08 - Composés comportant une ou plusieurs liaisons C—Si
  • C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si

86.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND RESIST UNDERLAYER FILM FORMING COMPOSITION

      
Numéro d'application JP2023014498
Numéro de publication 2023/199881
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-10-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Komatsu,hiroyuki
  • Dobashi,masato
  • Tatsubo,daiki
  • Yoshinaka,sho
  • Akita,shunpei
  • Dei,satoshi
  • Yoneda,eiji
  • Ehara,kengo

Abrégé

The present invention provides: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition that is capable of forming a resist underlayer film having excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a repeating unit (1) which comprises an organic sulfonic acid anion moiety and an onium cation moiety.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

87.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2023006294
Numéro de publication 2023/195255
Statut Délivré - en vigueur
Date de dépôt 2023-02-21
Date de publication 2023-10-12
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Watanabe Daichi
  • Tomihama Munehisa
  • Nishikori Katsuaki

Abrégé

This radiation-sensitive resin composition comprises a first polymer and a compound. The first polymer has a first structural unit that contains a substructure in which a hydrogen atom in a carboxy group, phenolic hydroxyl group, or amide group is substituted by a group with formula (1); has a second structural unit that contains a phenolic hydroxyl group; and has a solubility in developer that is modified by the action of acid. The compound has a monovalent organic acid anion and a monovalent radiation-sensitive onium cation that contains an aromatic ring in which at least one hydrogen atom is substituted by a fluorine atom or a fluorine atom-containing group.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

88.

METHOD FOR PRODUCING ABRASIVE GRAINS, COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, AND POLISHING METHOD

      
Numéro d'application JP2023009228
Numéro de publication 2023/189400
Statut Délivré - en vigueur
Date de dépôt 2023-03-10
Date de publication 2023-10-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yanagi, Takanori
  • Wang, Pengyu
  • Nakanishi, Koji

Abrégé

The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. The present invention also provides: a composition for chemical mechanical polishing, the composition being capable of polishing a silicon oxide film at a high polishing rate, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. A method for producing abrasive grains according to the present invention comprises a step in which particles each having a surface to which a hydroxyl group (-OH) is immobilized via a covalent bond, an alkoxysilane having an epoxy group, and a basic compound are mixed and heated.

Classes IPC  ?

  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09K 3/14 - Substances antidérapantes; Abrasifs
  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe

89.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE

      
Numéro d'application JP2023009712
Numéro de publication 2023/189502
Statut Délivré - en vigueur
Date de dépôt 2023-03-13
Date de publication 2023-10-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Abe, Yudai
  • Kiriyama, Kazuya

Abrégé

This radiation-sensitive composition contains a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), A1represents a (m+n+2)-valent aromatic ring group. In formula (1), "-OH" and "-COO-" are bound to the same benzene ring in A1. An atom to which "-OH" is bound is located adjacent to an atom to which "-COO-" is bound. R1represents a monovalent group having a cyclic(thio)acetal structure. M+ represents a monovalent organic cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • C09K 3/00 - Substances non couvertes ailleurs

90.

Display

      
Numéro d'application 18022223
Numéro de brevet 11963413
Statut Délivré - en vigueur
Date de dépôt 2021-08-12
Date de la première publication 2023-10-05
Date d'octroi 2024-04-16
Propriétaire
  • JSR CORPORATION (Japon)
  • MATTRIX TECHNOLOGIES, INC. (USA)
Inventeur(s)
  • Katsui, Hiromitsu
  • Liu, Bo
  • Lemaitre, Maxime

Abrégé

A liquid crystal display device includes: a substrate; a plurality of vertical organic light-emitting transistors; a data line that supplies a voltage to a gate electrode of the vertical organic light-emitting transistor; a thin-film transistor that is connected between the gate electrode of each of the vertical organic light-emitting transistors and the data line and controls supply of the voltage to the gate electrode of the vertical organic light-emitting transistor; a gate line that is connected to the gate electrode of the thin-film transistor and transmits a signal for switching the thin-film transistor; and a plurality of current supply lines that are wired in a first direction outside a formation region of the vertical organic light-emitting transistor, the current supply lines being in contact with a source electrode of the vertical organic light-emitting transistor to supply a current to the vertical organic light-emitting transistor.

Classes IPC  ?

  • H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
  • G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
  • H10K 50/30 - Transistors organiques émetteurs de lumière
  • H10K 59/12 - Affichages à OLED à matrice active [AMOLED]

91.

EXPANDED BEADS, AND EXPANDED BEAD MOLDED BODY

      
Numéro d'application JP2023007329
Numéro de publication 2023/189114
Statut Délivré - en vigueur
Date de dépôt 2023-02-28
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Kitahara Taizo

Abrégé

Expanded beads comprising a linear low density polyethylene as a base resin, wherein: the linear low density polyethylene has a biomass degree of 40% or more as measured by ASTM D 6866; in a DSC curve obtained by heating from 23°C to 200°C at a heating rate of 10°C/min, the expanded beads have a crystal structure in which are present a melting peak (intrinsic peak) unique to the linear low density polyethylene, and one or more melting peaks (high temperature peaks) on a higher temperature side than the intrinsic peak; the total heat of fusion of the expanded beads is at least 70 J/g and at most 100 J/g; and the heat of fusion at the high temperature peak is at least 10 J/g and at most 50 J/g.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles

92.

EXPANDED BEAD PRODUCTION METHOD, AND EXPANDED BEADS

      
Numéro d'application JP2023007330
Numéro de publication 2023/189115
Statut Délivré - en vigueur
Date de dépôt 2023-02-28
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Kitahara Taizo

Abrégé

A method for producing expanded beads having a bulk density of 10-240 kg/m3, the method expanding resin beads having, as the base resin, a mixed resin from at least two linear low density polyethylenes. The mixed resin contains a polyethylene A having a biomass degree of at least 50% and a melt flow rate (MFR) of 0.1-3 g/10min, and a polyethylene B. The difference between the MFR of A and the MFR of B is 0-2 g/10min, the mass ratio of A and B is 5/95-95/5, and the biomass degree of the mixed resin is 5% or more. In a DSC curve, the expanded beads have a crystal structure in which are present melting peaks unique to the linear low density polyethylenes and a high-temperature peak on the high-temperature side thereof, the heat of fusion at the high-temperature peak being 10-50 J/g.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage

93.

METHOD FOR PRODUCING FOAMABLE POLYAMIDE-BASED RESIN PARTICLES, METHOD FOR PRODUCING POLYAMIDE-BASED RESIN FOAMED PARTICLES, AND POLYAMIDE-BASED RESIN FOAMED PARTICLES

      
Numéro d'application JP2023008103
Numéro de publication 2023/189213
Statut Délivré - en vigueur
Date de dépôt 2023-03-03
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Yamanaka Ryo

Abrégé

A method for producing foamable polyamide-based resin particles according to the present invention includes impregnating polyamide-based resin particles with an inorganic physical foaming agent in a gas phase, wherein the polyamide-based resin particles have a water content of at least 2.5 mass% and contain 0.5-10 mass% of carbon black. The foamable polyamide-based resin particles are obtained by heating and foaming foamable polyamide resin particles.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

94.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE

      
Numéro d'application JP2023009713
Numéro de publication 2023/189503
Statut Délivré - en vigueur
Date de dépôt 2023-03-13
Date de publication 2023-10-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Furuichi, Kota
  • Nakamura, Ryosuke
  • Furukawa, Tsuyoshi

Abrégé

The present invention causes a radiation-sensitive composition to contain a polymer including acid-labile group and a compound (Q) given by formula (1). In formula (1), L1represents an ester group, -CO-NR3-, a (thio) ether group, or a sulfonyl group. L2 represents a single bond or a divalent linking group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
  • C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
  • C07C 309/27 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes carboxyle liés au squelette carboné
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 327/04 - Cycles à cinq chaînons
  • C07D 327/06 - Cycles à six chaînons
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

95.

METHOD FOR PRODUCING GEOPOLYMER FOAM

      
Numéro d'application JP2023013267
Numéro de publication 2023/190909
Statut Délivré - en vigueur
Date de dépôt 2023-03-30
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Noro Jinichiro
  • Naito Naoki

Abrégé

The present invention provides a method for producing a geopolymer foam, wherein: a reaction slurry that contains an aluminosilicate, an alkali metal silicate, aggregate and water is obtained; an expandable slurry is formed by adding a foaming agent to the reaction slurry; and a geopolymer foam is produced by heating the expandable slurry. This method for producing a geopolymer foam is characterized in that: mica which has an average particle diameter of 50-500 µm and a volume ratio (X) of particles having a particle diameter of 10 µm or less of 3% or less is used as the aggregate; and the reaction slurry has a viscosity of 3,000-15,000 Pa∙s at 23°C.

Classes IPC  ?

  • C04B 28/26 - Silicates de métaux alcalins
  • C04B 12/04 - Ciments à base de silicates de métaux alcalins ou d'ammonium
  • C04B 14/20 - Mica; Vermiculite
  • C04B 20/00 - Emploi de matières comme charges pour mortiers, béton ou pierre artificielle prévu dans plus d'un groupe et caractérisées par la forme ou la répartition des grains; Traitement de matières spécialement adapté pour renforcer leur propriétés de charge dans les mortiers, béton ou pierre artificielle prévu dans plus d'un groupe de ; Matières expansées ou défibrillées
  • C04B 38/02 - Mortiers, béton, pierre artificielle ou articles de céramiques poreux; Leur préparation par addition d'agents chimiques gonflants

96.

METHOD FOR PRODUCING THERMOPLASTIC RESIN FOAM PARTICLE MOLDED BODY

      
Numéro d'application JP2023009245
Numéro de publication 2023/176712
Statut Délivré - en vigueur
Date de dépôt 2023-03-10
Date de publication 2023-09-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Miura Tomohiro
  • Sasaki Kenta

Abrégé

A method for producing a thermoplastic resin foam particle molded body according to the present invention comprises a crack filling step and an in-mold molding step. Foam particles (2) to be used in the crack filling step have a columnar shape, while having one or more defective parts of one or more kinds, the defective parts being selected from the group consisting of through holes and grooves. In cut surfaces of the foam particles (2) obtained by cutting each foam particle (2) by a plane that is perpendicular to the axial direction of the foam particle (2) at the center of the axial direction, the ratio Ca/A of the average cross-sectional area Ca of one defective part to the average cross-sectional area A of the foam particles (2) is 0.01 to 0.20, and the ratio Ct/A of the total cross-sectional area Ct of the defective parts to the average cross-sectional area A of the foam particles (2) is 0.02 to 0.20. The filling rate F of the foam particles (2) in a state where a mold (1) is completely closed is 125% to 220%.

Classes IPC  ?

  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse

97.

PRODUCTION METHOD FOR THERMOPLASTIC RESIN FOAMED PARTICLE MOLDED BODY

      
Numéro d'application JP2023009246
Numéro de publication 2023/176713
Statut Délivré - en vigueur
Date de dépôt 2023-03-10
Date de publication 2023-09-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Miura Tomohiro
  • Sasaki Kenta

Abrégé

AAmaxminminmaxmax of the second portion (122) in the cracking filling step is 5-100%.

Classes IPC  ?

  • B29C 44/60 - Mesure, commande ou régulation
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 44/54 - Alimentation en matière à mouler dans une cavité de moulage ouverte ou sur une surface mobile, c.à d. pour la fabrication d'objets de longueur indéfinie sous forme de particules ou de grains expansibles
  • C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse

98.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Numéro d'application JP2023009992
Numéro de publication 2023/176868
Statut Délivré - en vigueur
Date de dépôt 2023-03-15
Date de publication 2023-09-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishiguchi Naoki
  • Tsuyuki Ryouta
  • Matsumoto Tomoyuki
  • Ishii Akira
  • Ito Atsushi
  • Higuchi Tetsuya

Abrégé

The present invention provides a photosensitive resin composition which contains a polymer (A) that has an acid-cleavable group, a photoacid generator (B) and a solvent (C), wherein: the polymer (A) comprises a structural unit (I) that is represented by formula (1) and a structural unit (III) that has a glass transition temperature Tg of 50°C or less in the form of a homopolymer; and the photoacid generator (B) is a compound which generates an acid that has a van der Waals volume of 200 Å3or more when irradiated with active light or radiation. The present invention also provides: a method for forming a resist pattern film, the method using this photosensitive resin composition; and a method for producing a plated shaped article. The details of R1A and L in formula (1) are as described in the description.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/02 - Acides monocarboxyliques contenant moins de dix atomes de carbone; Leurs dérivés
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/004 - Matériaux photosensibles

99.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING MONOMERIC COMPOUND

      
Numéro d'application 18197225
Statut En instance
Date de dépôt 2023-05-15
Date de la première publication 2023-09-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Kinoshita, Natsuko

Abrégé

A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure. A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/14 - Esters méthyliques
  • G03F 7/004 - Matériaux photosensibles
  • C08F 220/22 - Esters contenant un halogène
  • C08F 220/16 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone
  • G03F 7/30 - Dépouillement selon l'image utilisant des moyens liquides
  • C08F 212/00 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un noyau carbocyclique aromatique

100.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application 18024309
Statut En instance
Date de dépôt 2021-08-17
Date de la première publication 2023-08-31
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a pattern formation method. A radiation-sensitive resin composition containing: a radiation-sensitive acid generating resin comprising a repeating unit A having an acid-dissociable group represented by the following formula (1) and a repeating unit B including an organic acid anion moiety and a sulfonium cation moiety containing an aromatic ring structure having a fluorine atom; and a solvent; in the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RX is a monovalent hydrocarbon group having 2 to 20 carbon atoms; and Cy represents an alicyclic structure having 3 to 20 ring members and formed together with a carbon atom to which this is bonded. Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a pattern formation method. A radiation-sensitive resin composition containing: a radiation-sensitive acid generating resin comprising a repeating unit A having an acid-dissociable group represented by the following formula (1) and a repeating unit B including an organic acid anion moiety and a sulfonium cation moiety containing an aromatic ring structure having a fluorine atom; and a solvent; in the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RX is a monovalent hydrocarbon group having 2 to 20 carbon atoms; and Cy represents an alicyclic structure having 3 to 20 ring members and formed together with a carbon atom to which this is bonded.

Classes IPC  ?

  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
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