JSR Corporation

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[Owner] JSR Corporation 2,475
Techno Polymer Co., Ltd. 80
JSR Micro Inc. 17
Japan Coloring Co., Ltd. 16
Japan Fine Coatings Co. Ltd. 13
Date
New (last 4 weeks) 17
2024 May (MTD) 15
2024 April 13
2024 March 17
2024 February 9
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IPC Class
G03F 7/004 - Photosensitive materials 492
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists 453
G03F 7/20 - Exposure; Apparatus therefor 335
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or 305
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers 227
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NICE Class
01 - Chemical and biological materials for industrial, scientific and agricultural use 98
17 - Rubber and plastic; packing and insulating materials 30
05 - Pharmaceutical, veterinary and sanitary products 14
09 - Scientific and electric apparatus and instruments 13
42 - Scientific, technological and industrial services, research and design 12
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Status
Pending 155
Registered / In Force 2,425
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1.

METHOD FOR PRODUCING CARRIER FOR CHROMATOGRAPHIC USE, METHOD FOR PRODUCING CHROMATOGRAPHY COLUMN, AND CARRIER FOR CHROMATOGRAPHIC USE

      
Application Number 18551116
Status Pending
Filing Date 2022-03-15
First Publication Date 2024-05-23
Owner JSR CORPORATION (Japan)
Inventor
  • Kobayashi, Kunihiko
  • Akiyama, Minato
  • Inoue, Yukiya
  • Kikuchi, Masahiro

Abstract

A method for producing a chromatography carrier, including providing a solid phase support, where the solid phase support provided is formed of porous particles on which a ligand has or has not been immobilized, and subjecting the solid phase support to sieve classification. A coefficient of variation of a volume particle size distribution of the porous particles when a ligand has been immobilized is adjusted to 1% to 22%, and a ratio (d1/d50) of volume cumulative 1% particle size d1 to volume cumulative 50% particle size d50 in terms of the porous particles is adjusted to 0.55 to 1.0.

IPC Classes  ?

  • B01J 20/286 - Phases chemically bonded to a substrate, e.g. to silica or to polymers
  • B01D 15/20 - Selective adsorption, e.g. chromatography characterised by constructional or operational features relating to the conditioning of the sorbent material
  • B01D 15/38 - Selective adsorption, e.g. chromatography characterised by the separation mechanism involving specific interaction not covered by one or more of groups , e.g. affinity, ligand exchange or chiral chromatography
  • B01J 20/26 - Synthetic macromolecular compounds
  • B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
  • B01J 20/30 - Processes for preparing, regenerating or reactivating
  • B01J 20/32 - Impregnating or coating

2.

METHOD FOR PRODUCING POLYAMIDE RESIN FOAM PARTICLES

      
Application Number 18553026
Status Pending
Filing Date 2022-03-01
First Publication Date 2024-05-23
Owner JSP Corporation (Japan)
Inventor Hayashi, Tatsuya

Abstract

A method for producing a polyamide-based resin expanded bead, the method comprising expanding a polyamide-based resin bead using a physical blowing agent, wherein the polyamide-based resin bead comprises a coloring pigment and a higher fatty acid metal salt having 12 to 24 carbon atoms; a metal in the higher fatty acid metal salt is one or more metals selected from the group consisting of magnesium, aluminum, and zinc; and a content of the higher fatty acid metal salt in the polyamide-based resin bead is 500 to 5000 mass ppm.

IPC Classes  ?

  • C08J 9/16 - Making expandable particles
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof

3.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023030940
Publication Number 2024/105962
Status In Force
Filing Date 2023-08-28
Publication Date 2024-05-23
Owner JSR CORPORATION (Japan)
Inventor
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Shiratani,motohiro

Abstract

Provided are: a radioactive-ray-sensitive resin composition which makes it possible to form a resist film having satisfactory storage stability and also having excellent sensitivity and LWR performance even when a next-generation technology is applied; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises: a radioactive-ray-sensitive onium salt having a cation moiety containing a fluorine atom; a carboxylic acid having a standard boiling point of 90°C to 220°C and having no aromatic ring, or an alcohol having a standard boiling point of 60°C or lower, or both of the carboxylic acid and the alcohol; a resin containing a structural unit having an acid-dissociable group; and a solvent.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

4.

RADIATION SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023035159
Publication Number 2024/106020
Status In Force
Filing Date 2023-09-27
Publication Date 2024-05-23
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Kobayashi,atsushi
  • Hachiya,asuka
  • Shiratani,motohiro
  • Nemoto,ryuichi

Abstract

Provided are a radiation sensitive resin composition and a pattern formation method that can form a resist film that has excellent preservation stability and has excellent CDU performance and sensitivity when applied to a next-generation technology. This radiation sensitive resin composition comprises: a radiation sensitive onium salt (A) represented by formula (1) (in the formula (1), Rp1pp11 +represents a monovalent radiation sensitive onium cation); a radiation sensitive onium salt (B) that is different from the radiation sensitive onium salt (A) and that is represented by formula (2) (in the formula (2), Rp222 +11 +22 + is a cation including a fluorine atom.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

5.

POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Application Number 18278657
Status Pending
Filing Date 2021-12-21
First Publication Date 2024-05-16
Owner JSP CORPORATION (Japan)
Inventor
  • Nohara, Tokunobu
  • Ode, Yasutaka

Abstract

A polypropylene-based resin expanded beads configured to include an NOR type hindered amine and has a surface on which a thermoplastic polymer layer is located, in which a blending ratio of the amine in the expanded beads is 0.03 wt % or more and 0.5 wt % or less, and a blending ratio of the amine in the thermoplastic polymer layer is less than the blending ratio of the amine in the expanded beads. Further, the method for producing the expanded beads includes a covering and foaming step, in which in the resin beads to be obtained in the covering step, a blending ratio of the amine in the resin beads is adjusted to be 0.03 wt % or more and 0.5 wt % or less, and a blending ratio of the amine in a thermoplastic polymer layer is adjusted to be lower than the blending ratio of the amine in the resin beads.

IPC Classes  ?

  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/224 - Surface treatment
  • C08J 9/232 - Forming foamed products by sintering expandable particles
  • C08K 5/3492 - Triazines

6.

RADIATION CURABLE COMPOSITION FOR FORMING OPTICAL FIBER PRIMARY COAT LAYER, AND URETHANE (METH)ACRYLATE

      
Application Number JP2023015141
Publication Number 2024/100915
Status In Force
Filing Date 2023-04-14
Publication Date 2024-05-16
Owner JAPAN FINE COATINGS CO., LTD. (Japan)
Inventor
  • Shinohara Noriyasu
  • Sugiyama Naoki

Abstract

The present invention pertains to a radiation curable composition which is for forming an optical fiber primary coat layer, and which is capable of forming a cured product having excellent flexibility and adequate mechanical strength. More specifically, the present invention pertains to a radiation curable composition which is for forming an optical fiber primary coat layer, and which comprises: (A) a urethane (meth)acrylate that is obtained by reacting at least (a) a polyether diol having a number average molecular weight of 2000-5000, (b) a diisocyanate compound, (c) a hydroxyl-containing (meth)acrylate compound, and (d) a diol having a molecular weight of 500 or less; (B) a (meth)acrylate compound other than component (A); and (C) a radiation polymerization initiator.

IPC Classes  ?

  • C03C 25/285 - Acrylic resins
  • C08F 290/06 - Polymers provided for in subclass
  • C08G 18/32 - Polyhydroxy compounds; Polyamines; Hydroxy amines
  • C08G 18/48 - Polyethers
  • C08G 18/66 - Compounds of groups , , or
  • C08G 18/67 - Unsaturated compounds having active hydrogen
  • C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
  • C09D 4/02 - Acrylmonomers
  • C09D 7/63 - Additives non-macromolecular organic
  • G02B 6/44 - Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables

7.

CURABLE COMPOSITION FOR ORGANIC EL ELEMENTS, CURED PRODUCT FOR ORGANIC EL ELEMENTS AND METHOD FOR PRODUCING SAME, ORGANIC EL ELEMENT, AND POLYMER

      
Application Number JP2023040331
Publication Number 2024/101411
Status In Force
Filing Date 2023-11-09
Publication Date 2024-05-16
Owner JSR CORPORATION (Japan)
Inventor
  • Murakami, Yoshitaka
  • Kamiya, Ikuyo

Abstract

Disclosed is a curable composition for organic EL elements, the curable composition containing (A) a polymer that comprises a structural unit derived from a compound having an acidic group, and (B) a photosensitive compound, wherein: the polymer (A) comprises a structural unit (I) that is derived from an aromatic vinyl compound and a structural unit (II) that is derived from a maleimide compound, while containing, as the compound having an acidic group, at least one compound that is selected from the group consisting of an aromatic vinyl compound and a maleimide compound; and the ratio of the sum of the structural unit (I) and the structural unit (II) in the polymer (A) is 70% by mole or more relative to all structural units in the polymer (A).

IPC Classes  ?

  • H10K 50/84 - Passivation; Containers; Encapsulations
  • C08F 212/02 - Monomers containing only one unsaturated aliphatic radical
  • C08F 222/40 - Imides, e.g. cyclic imides
  • G03F 7/004 - Photosensitive materials
  • G03F 7/023 - Macromolecular quinonediazides; Macromolecular additives, e.g. binders
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • H10K 59/122 - Pixel-defining structures or layers, e.g. banks
  • H10K 59/173 - Passive-matrix OLED displays comprising banks or shadow masks
  • H10K 85/10 - Organic polymers or oligomers

8.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Application Number 18391906
Status Pending
Filing Date 2023-12-21
First Publication Date 2024-05-09
Owner JSR CORPORATION (Japan)
Inventor
  • Nakatsu, Hiroki
  • Abe, Shinya
  • Yamada, Shuhei
  • Tsuji, Takashi
  • Wakayama, Hiroki
  • Mayumi, Kosuke
  • Miyauchi, Hiroyuki

Abstract

A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2). A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).

IPC Classes  ?

  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • G03F 7/075 - Silicon-containing compounds
  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/311 - Etching the insulating layers

9.

COMPOSITION FOR SEMICONDUCTOR PROCESSING AND PROCESSING METHOD

      
Application Number 18457365
Status Pending
Filing Date 2023-08-29
First Publication Date 2024-05-09
Owner JSR Corporation (Japan)
Inventor Tano, Hiroyuki

Abstract

A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106. A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106. RO(CH2)2O(CH2)2OH  (1) A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106. RO(CH2)2O(CH2)2OH  (1) ROH  (2) A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106. RO(CH2)2O(CH2)2OH  (1) ROH  (2) (In the formula (1) and the formula (2), R's represent the same hydrocarbon group.)

IPC Classes  ?

  • C11D 3/37 - Polymers
  • C11D 3/20 - Organic compounds containing oxygen
  • C11D 3/28 - Heterocyclic compounds containing nitrogen in the ring
  • C11D 11/00 - Special methods for preparing compositions containing mixtures of detergents
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

10.

RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD

      
Application Number 18504594
Status Pending
Filing Date 2023-11-08
First Publication Date 2024-05-09
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X), A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X), where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

11.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number 18277113
Status Pending
Filing Date 2021-12-20
First Publication Date 2024-05-09
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2). A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 309/10 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to an acyclic carbon atom
  • C07C 309/39 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing halogen atoms bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 327/04 - Five-membered rings
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08F 220/38 - Esters containing sulfur
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

12.

COMPOSITION FOR SEMICONDUCTOR PROCESSING AND PROCESSING METHOD

      
Application Number 18460625
Status Pending
Filing Date 2023-09-04
First Publication Date 2024-05-09
Owner JSR CORPORATION (Japan)
Inventor Tano, Hiroyuki

Abstract

A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104. A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104. R2N(OH)  (1) A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104. R2N(OH)  (1) R2NH  (2) (In the formula (1) and the formula (2), R's each independently represent an alkyl group having 1 to 4 carbon atoms.)

IPC Classes  ?

  • C11D 11/00 - Special methods for preparing compositions containing mixtures of detergents
  • C11D 7/26 - Organic compounds containing oxygen
  • C11D 7/32 - Organic compounds containing nitrogen
  • C11D 7/50 - Solvents
  • G03F 7/42 - Stripping or agents therefor
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

13.

JSR MOR

      
Application Number 1788074
Status Registered
Filing Date 2024-03-12
Registration Date 2024-03-12
Owner JSR CORPORATION (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Industrial chemicals; chemical preparations for use in photography; photoresists.

14.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION

      
Application Number 18528951
Status Pending
Filing Date 2023-12-05
First Publication Date 2024-05-02
Owner JSR CORPORATION (Japan)
Inventor
  • Miyauchi, Hiroyuki
  • Dei, Satoshi
  • Tanaka, Ryotaro
  • Yoneda, Eiji
  • Yoshinaka, Sho

Abstract

A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/029 - Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/32 - Liquid compositions therefor, e.g. developers
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

15.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023032340
Publication Number 2024/090041
Status In Force
Filing Date 2023-09-05
Publication Date 2024-05-02
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani,motohiro
  • Hachiya,asuka

Abstract

Provided are a radioactive-ray-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has satisfactory storage stability, and also has excellent sensitivity and LWR performance when next-generation technology is applied. The radioactive-ray-sensitive resin composition comprises at least one onium salt having an organic acid anion moiety and an onium cation moiety, a resin containing a structural unit having an acid dissociable group, and a solvent, in which at least a part of the onium cation moiety in the onium salt is a fluorinated onium cation moiety containing a fluorine atom, and at least a part of the organic acid anion moiety in the onium salt is an organic acid anion moiety (1) represented by formula (1). (In formula (1), R1represents an organic group having a valency of (q2+1) or, when there are a plurality of R1's, two of the R1's are bonded to each other to form a 5- to 20-membered cyclic structure in conjunction with a carbon atom bonded to them and located on a benzene ring in formula (1); R2represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, a cyano group, a nitro group or an amino group; q1 represents an integer of 1 to 4; when q1 is 2 or more, a plurality of R1's are the same as or different from each other; when q1 is 1, q2 represents an integer of 1 to 4; when q1 is 2 or more, a plurality of q2's each independently represent an integer of 0 to 4, in which at least one of q2's is 1 or more; q3 represents an integer of 0 to 3; when q3 is 2 or more, a plurality of R2's are same as or different from each other; and q1 and q3 satisfy the formula q1+q3 ≤ 4.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 65/105 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups polycyclic
  • C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
  • C07C 65/28 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups having unsaturation outside the aromatic rings
  • C07C 233/87 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom of a carbon skeleton containing six-membered aromatic rings
  • C07C 381/12 - Sulfonium compounds
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

16.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Application Number JP2023036847
Publication Number 2024/085030
Status In Force
Filing Date 2023-10-11
Publication Date 2024-04-25
Owner JSR CORPORATION (Japan)
Inventor
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Katagiri,takashi
  • Abe,shinya
  • Naganawa,atsuko

Abstract

The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a composition which is capable of forming a film that has excellent bending resistance and excellent solubility during liquid discharging; and a composition. The present invention provides a method for producing a semiconductor substrate, the method comprising a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is directly or indirectly formed on the resist underlayer film that has been formed by the application step, and a step in which etching is performed using the resist pattern as a mask, wherein: the resist underlayer film forming composition contains a solvent and a compound having a nitro group; the compound having a nitro group is a polymer having a repeating unit that comprises a nitro group and an aromatic ring, an aromatic ring-containing compound having a nitro group and a molecular weight of 600 to 3,000, or a combination thereof; the content ratio of the compound having a nitro group in the components of the resist underlayer film forming composition excluding the solvent is 10% by mass or more.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

17.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2023036474
Publication Number 2024/084993
Status In Force
Filing Date 2023-10-06
Publication Date 2024-04-25
Owner JSR CORPORATION (Japan)
Inventor
  • Maruyama Ken
  • Nishikori Katsuaki
  • Kiriyama Kazuya

Abstract

A radiation-sensitive composition comprising a polymer having: a side chain including an acid-dissociable group; and a side chain including one or more radiation-sensitive onium cation structures and two or more iodo groups.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/10 - Esters
  • G03F 7/20 - Exposure; Apparatus therefor

18.

MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND METHOD FOR PRODUCING SAME

      
Application Number 18392071
Status Pending
Filing Date 2023-12-21
First Publication Date 2024-04-18
Owner JSP CORPORATION (Japan)
Inventor
  • Sakamura, Takumi
  • Ohta, Hajime

Abstract

A method for producing a molded article of expanded beads includes filling tubular polypropylene-based resin expanded beads each having a through-hole in a mold, and supplying a heating medium to fusion-bond the expanded beads to each other. The expanded beads have a foamed layer constituted by polypropylene-based resin. A closed cell of the expanded beads is 90% or more. An average hole diameter (d) of through-holes of the expanded beads is less than 1 mm. A ratio [d/D] of the average hole diameter (d) to an average outer diameter (D) of the expanded beads is 0.4 or less. An open cell content of the molded article of expanded beads is 2.5% or more and 12% or less.

IPC Classes  ?

19.

ANTIBODY AND USE THEREOF

      
Application Number JP2023036979
Publication Number 2024/080325
Status In Force
Filing Date 2023-10-12
Publication Date 2024-04-18
Owner
  • JSR CORPORATION (Japan)
  • KYOTO UNIVERSITY (Japan)
Inventor
  • Ishikawa Hidefumi
  • Kanahara Masaaki
  • Mizuuchi Motoaki
  • Yamaguchi Tetsuji
  • Matsuzawa Shuichi

Abstract

HLL region) contain respectively the amino acid sequences represented by SEQ ID NOS: 4-6, or a fragment of the antibody.

IPC Classes  ?

  • C07K 16/40 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies against enzymes
  • A61K 39/395 - Antibodies; Immunoglobulins; Immune serum, e.g. antilymphocytic serum
  • A61P 35/00 - Antineoplastic agents

20.

RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18270256
Status Pending
Filing Date 2021-11-15
First Publication Date 2024-04-18
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X]. A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X].

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

21.

METHOD FOR PRODUCING CHROMATOGRAPHY CARRIER, METHOD FOR PRODUCING CHROMATOGRAPHY COLUMN, AND CHROMATOGRAPHY CARRIER

      
Application Number 18551755
Status Pending
Filing Date 2022-03-15
First Publication Date 2024-04-11
Owner JSR CORPORATION (Japan)
Inventor
  • Kobayashi, Kunihiko
  • Akiyama, Minato
  • Inoue, Yukiya
  • Kikuchi, Masahiro

Abstract

A chromatography carrier may exhibit high liquid permeability and an excellent pressure-resistant characteristic during liquid passage. A chromatography carrier production method may include: (1) providing a solid phase support, the solid phase support being formed of porous particles on which a ligand has or has not been immobilized; and (2) subjecting the solid phase support to sieve classification, the coefficient of variation of the volume particle size distribution of the porous particles when a ligand has been immobilized being adjusted to 1% to 22%. The skewness of the volume particle size distribution of the porous particles when a ligand has been immobilized may be adjusted to −0.1 to 5.

IPC Classes  ?

  • B01J 20/285 - Porous sorbents based on polymers
  • B01D 15/20 - Selective adsorption, e.g. chromatography characterised by constructional or operational features relating to the conditioning of the sorbent material
  • B01D 15/22 - Selective adsorption, e.g. chromatography characterised by constructional or operational features relating to the construction of the column
  • B01J 20/30 - Processes for preparing, regenerating or reactivating

22.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING RESIST PATTERN FILM, AND METHOD FOR MANUFACTURING PLATED SHAPED ARTICLE

      
Application Number 18372176
Status Pending
Filing Date 2023-09-25
First Publication Date 2024-04-11
Owner JSR CORPORATION (Japan)
Inventor
  • Satou, Keiichi
  • Ishii, Akira
  • Tomita, Takuya
  • Koumura, Kazuhiko

Abstract

An embodiment of the present invention relates to a photosensitive resin composition, a method for manufacturing a resist pattern film, and a method for manufacturing a plated shaped article; the photosensitive resin composition comprises (A) an alkali-soluble resin, (B1) a polymerizable compound having at least two (meth)acryloyl groups and at least two hydroxy groups in one molecule and having a ring structure, (C) a photoradical polymerization initiator, (D) at least one compound selected from the group consisting of a nitrogen-containing heterocyclic compound (d1) containing two or more nitrogen atoms, a thiol compound (d2), and a polymerization inhibitor (d3), and (F) a solvent.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/004 - Photosensitive materials
  • G03F 7/031 - Organic compounds not covered by group

23.

POLYPROPYLENE-BASED RESIN FOAMED PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2023036097
Publication Number 2024/075742
Status In Force
Filing Date 2023-10-03
Publication Date 2024-04-11
Owner JSP CORPORATION (Japan)
Inventor
  • Kitahara Taizo
  • Chiba Takuya

Abstract

Polypropylene-based resin foamed particles (1) each include a foamed layer formed of a polypropylene-based resin composition. The polypropylene-based resin composition forming the foamed layer contains a polypropylene-based resin and rubbery bodies (G) containing an ethylene propylene-based rubber. The rubbery bodies are dispersed in the polypropylene-based resin. The foamed particles (1) have a melting point Tm of 130-162°C.

IPC Classes  ?

  • C08J 9/16 - Making expandable particles
  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

24.

CORE MEMBER

      
Application Number 18285420
Status Pending
Filing Date 2022-03-29
First Publication Date 2024-04-04
Owner JSP CORPORATION (Japan)
Inventor
  • Hisamatsu, Katsunori
  • Hashimoto, Keiichi

Abstract

A core member used for a laminate in which polyurethane foam is laminated on the core member made of a thermoplastic resin expanded beads molded article, such that the molded article in which expanded beads having through holes are mutually fused, an average porosity of the expanded beads molded article is between 10% and 25%, and on a surface of the expanded beads molded article, a ratio of a total opening area of the through hole portions of the expanded beads to a surface area of the expanded beads molded article is between 2% and 5%, an average opening area of the through hole portions of the expanded beads is between 5 mm2 and 20 mm2, and the ratio of the number of through hole portions having an opening area of 2 mm2 or more to the number of through hole portions of the expanded beads is 60% or less.

IPC Classes  ?

  • B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material
  • B32B 27/06 - Layered products essentially comprising synthetic resin as the main or only constituent of a layer next to another layer of a specific substance
  • B32B 27/32 - Layered products essentially comprising synthetic resin comprising polyolefins
  • B32B 27/40 - Layered products essentially comprising synthetic resin comprising polyurethanes
  • C08J 9/228 - Forming foamed products

25.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION AND POLYMER

      
Application Number JP2023033535
Publication Number 2024/070728
Status In Force
Filing Date 2023-09-14
Publication Date 2024-04-04
Owner JSR CORPORATION (Japan)
Inventor
  • Katagiri,takashi
  • Abe,shinya
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abstract

The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition which is capable of forming a film that has excellent bending resistance; a composition; and a polymer. This method for producing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on the resist underlayer film that has been formed in the application step; and a step for performing etching using the resist pattern as a mask. With respect to this method for producing a semiconductor substrate, the resist underlayer film-forming composition contains a solvent and a polymer that has a structural unit represented by formula (1). (In formula (1), Ar1represents a divalent group that has an aromatic ring having 5 to 40 ring members; and X1represents a divalent group represented by formula (i).) (In formula (i), R1and R2 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, or these groups combine with each other to form a C3-20 divalent alicyclic hydrocarbon group together with the carbon atom to which these are bonded; and * and ** each denote a bonding hand in formula (1).)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 8/02 - Condensation polymers of aldehydes or ketones with phenols only of ketones

26.

RESIST PATTERN FORMATION METHOD

      
Application Number JP2023032396
Publication Number 2024/070535
Status In Force
Filing Date 2023-09-05
Publication Date 2024-04-04
Owner JSR CORPORATION (Japan)
Inventor Maruyama,ken

Abstract

The purpose of the present invention is to provide a method for forming a resist pattern having excellent pattern rectangularity. Provided is a method for forming a resist pattern, the method comprising: a step for applying a resist underlayer film-forming composition onto a substrate directly or indirectly; a step for forming a metal-containing resist film on the resist underlayer film formed by the resist underlayer film-forming composition application step; a step for exposing the metal-containing resist film to light; a step for preparing a developer solution; and a step for dissolving a light-exposed part in the metal-containing resist film that has been exposed to light using the developer solution to form a resist pattern.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 232/08 - Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/20 - Exposure; Apparatus therefor

27.

RESIST UNDERLAYER FILM-FORMING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2023033814
Publication Number 2024/070786
Status In Force
Filing Date 2023-09-19
Publication Date 2024-04-04
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada,shuhei
  • Dei,satoshi
  • Hayashi,yuya
  • Akita,shunpei
  • Yoneda,eiji

Abstract

Provided are: a resist underlayer film-forming composition which enables the formation of a resist underlayer film having excellent resist pattern rectangularity when the composition is exposed to extreme ultraviolet ray; and a method for manufacturing a semiconductor substrate using the composition. The resist underlayer film-forming composition is a composition for forming an underlayer film for a resist film which is subjected to the exposure to extreme ultraviolet ray, the composition comprising a compound having a iodine atom and a solvent, in which the compound having a iodine atom is a polymer having a repeating unit represented by formula (1), an aromatic-ring-containing compound having a iodine atom and having a molecular weight of 750 to 3000 inclusive, or a combination thereof, and the content ratio of the compound having a iodine atom in components other than the solvent in the underlayer film-forming composition is 50% by mass or more. (In formula (1), Ar1represents a bivalent group having a 5- to 40-membered aromatic ring; R0represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; and R1represents a monovalent organic group having 1 to 40 carbon atoms; in which at least one of Ar1, R0and R1 has a iodine atom.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

28.

SEARCHING METHOD FOR FUNCTIONAL MOLECULE FOR CAUSING RESPONSE IN CELL

      
Application Number JP2023035799
Publication Number 2024/071424
Status In Force
Filing Date 2023-09-29
Publication Date 2024-04-04
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Saya, Hideyuki
  • Kato, Shoichi
  • Ikemoto, Atsushi

Abstract

Provided is a vector or vector set for analyzing the function of a functional molecule, said vector or vector set comprising: a polynucleotide that codes for an expression system of a candidate molecule for the functional molecule; a polynucleotide that codes for a translation control sequence or a transcription control sequence which is activated by a response in a given cell; and a polynucleotide that codes for a reporter system which is operably linked with the translation control sequence or the transcription control sequence. Also provided is a searching method for a functional molecule which causes a response in a cell, said method comprising: introducing the vector or vector set into a cell; and measuring expression in the cell of a reporter system included in the vector or vector set.

IPC Classes  ?

  • C12N 5/10 - Cells modified by introduction of foreign genetic material, e.g. virus-transformed cells
  • C12N 15/09 - Recombinant DNA-technology
  • C12N 15/113 - Non-coding nucleic acids modulating the expression of genes, e.g. antisense oligonucleotides
  • C12N 15/12 - Genes encoding animal proteins
  • C12N 15/55 - Hydrolases (3)
  • C12N 15/63 - Introduction of foreign genetic material using vectors; Vectors; Use of hosts therefor; Regulation of expression
  • C12N 15/86 - Viral vectors

29.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION

      
Application Number 18509611
Status Pending
Filing Date 2023-11-15
First Publication Date 2024-03-28
Owner JSR CORPORATION (Japan)
Inventor
  • Yoneda, Eiji
  • Abe, Takayoshi
  • Miyauchi, Hiroyuki

Abstract

A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.

IPC Classes  ?

  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/32 - Liquid compositions therefor, e.g. developers

30.

ANTIBACTERIAL COMPOSITION AND METHOD FOR DETERMINING ADMINISTRATION OF SAID ANTIBACTERIAL COMPOSITION TO SUBJECT

      
Application Number JP2023034260
Publication Number 2024/063132
Status In Force
Filing Date 2023-09-21
Publication Date 2024-03-28
Owner
  • JSR CORPORATION (Japan)
  • KEIO UNIVERSITY (Japan)
Inventor
  • Masuda Kanae
  • Aoto Yoshimasa
  • Isayama Jun
  • Ishikawa Hidefumi
  • Goji Hiroshi
  • Watanabe Kazuto
  • Kawasaki Hiroshi
  • Ito Yoshihiro
  • Amagai Masayuki

Abstract

Provided are an antibacterial composition containing bacteria that exhibit antibacterial properties against bacteria having a positive correlation with a SCORAD value indicating the severity of atopic dermatitis, and a method for determining the administration of said antibacterial composition to a subject. The present invention comprises an antibacterial composition that contains resident skin bacteria as an active ingredient, the antibacterial composition acting against pro-inflammatory bacteria (excluding the resident skin bacteria).

IPC Classes  ?

  • A61K 35/74 - Bacteria
  • A61P 17/00 - Drugs for dermatological disorders
  • C12Q 1/689 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for detection or identification of organisms for bacteria

31.

RADIATION-SENSITIVE COMPOSITION, RESIST-PATTERN-FORMING METHOD, RADIATION-SENSITIVE ACID GENERATOR AND POLYMER

      
Application Number JP2023026224
Publication Number 2024/057701
Status In Force
Filing Date 2023-07-18
Publication Date 2024-03-21
Owner JSR CORPORATION (Japan)
Inventor
  • Taniguchi, Takuhiro
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Nishikori, Katsuaki

Abstract

This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), R5is a group obtained by removing (m+n+2) hydrogen atoms from a monocyclic or condensed aromatic hydrocarbon ring having r carbon atoms. L−33 −or –COO−. r is an integer of 6 to 14. A1is a single bond, –O–, –S– or –NR3–. R1is a hydrogen atom or a monovalent organic group. X1is a chlorine atom, a bromine atom or an iodine atom. m is an integer of 1 to (r–2). N is an integer of 0 to (r–3). R2is a substituted or unsubstituted monovalent hydrocarbon. M+ is a monovalent cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 8/12 - Hydrolysis
  • C08F 20/22 - Esters containing halogen
  • C08F 20/38 - Esters containing sulfur
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/12 - Esters of monohydric alcohols or phenols
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

32.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023028119
Publication Number 2024/057751
Status In Force
Filing Date 2023-08-01
Publication Date 2024-03-21
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Kiriyama,kazuya
  • Taniguchi,takuhiro
  • Kinoshita,natsuko

Abstract

Provided are: a radioactive-ray-sensitive resin composition that can exhibit sufficient levels of sensitivity and CDU performance when a next-generation technology is applied to the composition; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises an onium salt compound containing a structure represented by formula (1), a resin containing a structure unit (I) having a phenolic hydroxyl group or a group capable of providing a phenolic hydroxyl group by the action of an acid, and a solvent. (In formula (1), Rf1and Rf2each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a fluorine atom, or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms; R1, R2and R3122 each independently represent an integer of 0 to 4; X1and X2each independently represent an oxygen atom or a sulfur atom: L represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 10 carbon atoms; R4and R5each independently represent a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; at least one of R4and R5represents a monovalent aromatic-ring-containing organic group containing a 5- to 40-membered aromatic ring; and Z+ represents a monovalent radioactive-ray-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 317/24 - Radicals substituted by singly bound oxygen or sulfur atoms esterified
  • C08F 8/12 - Hydrolysis
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/12 - Esters of monohydric alcohols or phenols
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

33.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18235924
Status Pending
Filing Date 2023-08-21
First Publication Date 2024-03-21
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori, Katsuaki
  • Kawai, Takahiro

Abstract

A radiation-sensitive resin composition contains: a first polymer having a first structural unit including a partial structure obtained by substituting a hydrogen atom of a carboxy group or of a phenolic hydroxy group with an acid-labile group represented by formula (1); and a compound including: a monovalent radiation-sensitive onium cation moiety including an aromatic ring structure which includes a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion moiety. Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic ring structure having 5 to 30 ring atoms; R 1 and R2 each independently represent a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to an ethereal oxygen atom in the carboxy group or an oxygen atom in the phenolic hydroxy group. A radiation-sensitive resin composition contains: a first polymer having a first structural unit including a partial structure obtained by substituting a hydrogen atom of a carboxy group or of a phenolic hydroxy group with an acid-labile group represented by formula (1); and a compound including: a monovalent radiation-sensitive onium cation moiety including an aromatic ring structure which includes a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion moiety. Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic ring structure having 5 to 30 ring atoms; R 1 and R2 each independently represent a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to an ethereal oxygen atom in the carboxy group or an oxygen atom in the phenolic hydroxy group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials

34.

FOAMABLE PARTICLE PRODUCTION METHOD

      
Application Number JP2023030797
Publication Number 2024/057883
Status In Force
Filing Date 2023-08-25
Publication Date 2024-03-21
Owner JSP CORPORATION (Japan)
Inventor
  • Inoue Tsubasa
  • Hira Akinobu

Abstract

The present invention pertains to a method for producing foamable particles by using, as a base resin material, a mixture obtained by mixing a polypropylene-based resin A which is not a recovered material and a polypropylene-based resin B which is a recovered object of a post consumption material. Provided is a foamable particle production method that makes it possible to produce foamable particles in which variability in the foam expansion rate and reduction in the closed-cell rate are suppressed, and to have excellent appearance for a foamable particle molded body obtained by molding said foamable particles. In the foamable particle production method: a mixture obtained by mixing a polypropylene-based resin A having a melting point of 130-155°C and a polypropylene-based resin B which is a recovered object of a post consumption material is used as a base resin material; in the mixture, the blended proportion of the polypropylene-based resin A is 40-97 wt% and the blended proportion of the polypropylene-based resin B is 3-60 wt% (the total of the polypropylene-based resin A and the polypropylene-based resin B is 100 wt%); the melting point difference (melting point of the polypropylene-based resin B - melting point of the polypropylene-based resin A) between the polypropylene-based resin A and the polypropylene-based resin B is 10-30°C; the ash content of the polypropylene-based resin B is 5 wt% or less with respect to 100 wt% of the polypropylene-based resin B; and, regarding a melt peak indicated in a DSC curve obtained through thermal flux differential scanning calorimetry of the polypropylene-based resin B, the difference (Tme-Tms) between an extrapolated melting start temperature (Tms) and an extrapolated melting ending temperature (Tme) of the melt peak is 30°C or higher.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming

35.

EXPANDED POLYPROPYLENE RESIN BEADS AND EXPANDED POLYPROPYLENE RESIN BEADS MOLDED ARTICLE

      
Application Number 18240196
Status Pending
Filing Date 2023-08-30
First Publication Date 2024-03-14
Owner JSP Corporation (Japan)
Inventor
  • Yamasaki, Shobu
  • Ito, Yosuke

Abstract

An expanded polypropylene resin bead contains an inorganic pigment, a hindered amine compound, and an ultraviolet light absorber. The ultraviolet light absorber contains an ultraviolet light absorber A having a molecular weight of 360 or more, and a content of the ultraviolet light absorber A in the expanded polypropylene resin bead is 0.010% by mass or more and 2% by mass or less. An expanded polypropylene resin beads molded article is produced by in-mold molding of the expanded polypropylene resin bead.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
  • C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
  • C08J 9/232 - Forming foamed products by sintering expandable particles
  • C08K 13/02 - Organic and inorganic ingredients

36.

MANUFACTURING METHOD OF DISPLAY AND DISPLAY

      
Application Number 18275741
Status Pending
Filing Date 2022-01-31
First Publication Date 2024-03-14
Owner
  • JSR CORPORATION (Japan)
  • Mattrix Technologies, Inc (USA)
Inventor
  • Katsui, Hiromitsu
  • Liu, Bo
  • Lemaitre, Maxime

Abstract

Provided is a manufacturing method of a display including a vertical organic light-emitting transistor in which a wider light-emitting area is secured while manufacturing time and manufacturing cost are suppressed. In the manufacturing method of the display including the vertical organic light-emitting transistor, a gate electrode layer of the vertical organic light-emitting transistor and one of current-carrying electrode layers of a thin-film transistor connected to the gate electrode layer of the vertical organic light-emitting transistor are formed integrally in the same layer.

IPC Classes  ?

  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays

37.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATE, AND ELECTRONIC COMPONENT

      
Application Number JP2023027900
Publication Number 2024/053282
Status In Force
Filing Date 2023-07-31
Publication Date 2024-03-14
Owner JSR CORPORATION (Japan)
Inventor
  • Kawashima Naoyuki
  • Satonaka Eri
  • Anabuki Shoma

Abstract

One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, and an electronic device. The polymer has a repeating structural unit represented by formula (1). [R11represents a divalent substituted or unsubstituted nitrogen-containing heteroaromatic ring, R12independently represent a divalent substituted or unsubstituted aromatic hydrocarbon group, R13represents a C1-20 hydrocarbon group to which at least one group represented by formula (a1) other than the two R12is bonded, X1independently represent -O-, -S-, or -N(R14)-, * represents a bond to R13, and ** represents a bond with another structural unit in polymer (A).]

IPC Classes  ?

  • C08G 65/34 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
  • B32B 27/30 - Layered products essentially comprising synthetic resin comprising acrylic resin
  • C08F 12/34 - Monomers containing two or more unsaturated aliphatic radicals
  • C08F 290/06 - Polymers provided for in subclass
  • C08K 5/00 - Use of organic ingredients
  • C08L 25/18 - Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
  • C08L 101/02 - Compositions of unspecified macromolecular compounds characterised by the presence of specified groups

38.

ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING

      
Application Number 18233932
Status Pending
Filing Date 2023-08-15
First Publication Date 2024-03-14
Owner
  • Inpria Corporation (USA)
  • JSR Corporation (Japan)
Inventor
  • Kasahara, Kazuki
  • Cardineau, Brian J.
  • Jiang, Kai
  • Meyers, Stephen T.
  • Narasimhan, Amrit N.
  • Voss, Matthew

Abstract

A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C—Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.

IPC Classes  ?

39.

POLYMER, COMPOSITION, CURED PRODUCT, AND DISPLAY ELEMENT

      
Application Number JP2023032771
Publication Number 2024/053722
Status In Force
Filing Date 2023-09-08
Publication Date 2024-03-14
Owner JSR CORPORATION (Japan)
Inventor
  • Murakami Yoshitaka
  • Kashishita Kouji

Abstract

One embodiment of the present invention relates to a polymer, a composition, a cured product, or a display element. The composition comprises a polymer having a structural unit represented by formula (1). [In formula (1), A is a divalent group having an aromatic heterocyclic ring, B is a divalent group having an aromatic ring or an aromatic heterocyclic ring and having an alkali-soluble group, and X is independently -O-, -NH- or -S-.]

IPC Classes  ?

  • C08L 101/02 - Compositions of unspecified macromolecular compounds characterised by the presence of specified groups
  • C08G 65/34 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
  • G03F 7/023 - Macromolecular quinonediazides; Macromolecular additives, e.g. binders
  • G03F 7/032 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
  • G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements

40.

JSR MOR

      
Serial Number 79394904
Status Pending
Filing Date 2024-03-12
Owner JSR CORPORATION (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Industrial chemicals; chemical preparations for use in photography; photoresists.

41.

COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

      
Application Number JP2023029521
Publication Number 2024/048271
Status In Force
Filing Date 2023-08-15
Publication Date 2024-03-07
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada, Yuya
  • Kao, Shen-Yuan

Abstract

Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obtain a polished surface having a high reflective property. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a liquid medium, (C) an oxidizing agent, and (D) a nitrogen-containing hetrocyclic compound. The absolute value of the zeta potential of the (A) component of the composition for chemical mechanical polishing is 10 mV or more. When the content of the (C) component is noted as Mc (mass%) and the content of the (D) component is noted as Md (mass%), Mc/Md is 10 to 200.

IPC Classes  ?

  • H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
  • B24B 37/00 - Lapping machines or devices; Accessories
  • C09G 1/02 - Polishing compositions containing abrasives or grinding agents
  • C09K 3/14 - Anti-slip materials; Abrasives

42.

FOAM PARTICLE, AND FOAM PARTICLE MOLDED ARTICLE

      
Application Number JP2023029853
Publication Number 2024/048327
Status In Force
Filing Date 2023-08-18
Publication Date 2024-03-07
Owner JSP CORPORATION (Japan)
Inventor
  • Yamasaki Shobu
  • Ito Yosuke

Abstract

122 each independently represent a hydrocarbon group or a hydrocarbon group bonded via an oxygen atom.)

IPC Classes  ?

43.

MICROBIAL CARRIER FOR FOOD WASTE TREATMENT

      
Application Number JP2023030990
Publication Number 2024/048520
Status In Force
Filing Date 2023-08-28
Publication Date 2024-03-07
Owner JSP CORPORATION (Japan)
Inventor
  • Iwayama Yoshihiro
  • Sunaga Keisuke

Abstract

A microbial carrier for a food waste treatment, wherein: a base resin constituting the microbial carrier contains a thermoplastic starch and/or an aliphatic polyester; the biodegradability of the microbial carrier in a biodegradability test according to JIS K6953 is 60% or more; and the shape of the microbial carrier is columnar.

IPC Classes  ?

  • C08J 9/04 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
  • C12N 1/00 - Microorganisms, e.g. protozoa; Compositions thereof; Processes of propagating, maintaining or preserving microorganisms or compositions thereof; Processes of preparing or isolating a composition containing a microorganism; Culture media therefor

44.

Polyethylene Resin Foamed Particle, and Method for Producing Same

      
Application Number 18549026
Status Pending
Filing Date 2022-03-03
First Publication Date 2024-03-07
Owner JSP CORPORATION (Japan)
Inventor
  • Hayashi, Tatsuya
  • Hira, Akinobu

Abstract

Polyethylene resin foamed particles according to the present invention are obtained by using, as a base material resin, a non-crosslinked linear low density polyethylene. The linear low density polyethylene is a copolymer of ethylene and an α-olefin having 8 carbon atoms, and has a melt flow rate and a density in specified ranges. The foamed particle has an average foam size within a specified range, and has a crystal structure that causes an intrinsic peak and a high temperature peak to appear in the first round of a DSC curve obtained under a specific condition. The total fusion heat quantity (ΔH1) determined from the sum total of a fusion heat quantity (ΔHi) of the intrinsic peak and the fusion heat quantity (ΔHh) of the high temperature peak is within a specified range.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • B29C 44/34 - Component parts, details or accessories; Auxiliary operations

45.

MANUFACTURING METHOD FOR CONDUCTIVE FILM, LIQUID DISPERSION, RADIATION-SENSITIVE RESIN COMPOSITION, AND LIGHT EMITTING ELEMENT

      
Application Number JP2023029520
Publication Number 2024/048270
Status In Force
Filing Date 2023-08-15
Publication Date 2024-03-07
Owner JSR CORPORATION (Japan)
Inventor
  • Ichinohe,daigo
  • Katsui,hiromitsu
  • Yasuda,hiroyuki

Abstract

The present invention provides a manufacturing method for a conductive film that has high conductivity and makes it possible to evenly fix a conductive carbon material over the entirety of a conductive film formation region. The present invention also provides a manufacturing method wherein it is possible to efficiently remove a dispersant that has remained in the conductive film, as well as a polymer that is in a section where a radiation-sensitive resin composition has not been subjected to light exposure. The present invention includes: a step (A) in which a liquid dispersion is applied on a main surface of a substrate and dried to form a first film, said liquid dispersion including a carbon material and a first polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (B) in which a radiation-sensitive resin composition is applied on the first film to form a second film, said radiation-sensitive resin composition having an acid generating agent and a second polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (C) in which the second film is exposed to light; and a step (D) in which, after the step (C), the first polymer and the second polymer are removed by developing.

IPC Classes  ?

  • B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
  • B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
  • B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
  • B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
  • B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
  • C09D 5/24 - Electrically-conducting paints
  • C09D 179/08 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
  • H05B 33/28 - Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
  • H10K 50/10 - OLEDs or polymer light-emitting diodes [PLED]

46.

ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING

      
Application Number US2023030198
Publication Number 2024/039626
Status In Force
Filing Date 2023-08-15
Publication Date 2024-02-22
Owner
  • INPRIA CORPORATION (USA)
  • JSR CORPORATION (Japan)
Inventor
  • Kasahara, Kazuki
  • Cardineau, Brian J.
  • Jiang, Kai
  • Meyers, Stephen T.
  • Narasimhan, Amrit K.
  • Voss, Matthew

Abstract

A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C-Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/32 - Liquid compositions therefor, e.g. developers
  • G03F 7/38 - Treatment before imagewise removal, e.g. prebaking
  • G03F 7/42 - Stripping or agents therefor
  • G03F 7/20 - Exposure; Apparatus therefor

47.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM FORMING COMPOSITION

      
Application Number JP2023025616
Publication Number 2024/034311
Status In Force
Filing Date 2023-07-11
Publication Date 2024-02-15
Owner JSR CORPORATION (Japan)
Inventor
  • Hirasawa,kengo
  • Takada,kazuya
  • Ozaki,yuki
  • Kimata,hironori
  • Serizawa,ryuichi

Abstract

Provided are a semiconductor substrate production method and film forming composition which are capable of forming a film having excellent etching resistance and excellent embedding properties. This semiconductor substrate production method involves a step for applying a film forming composition onto a substrate, wherein the film forming composition contains a metal compound, an aromatic compound, and a solvent; the aromatic compound has an aromatic hydrocarbon ring structure and a partial structure represented by formula (1) below; and the aromatic hydrocarbon ring structure has 6 or more carbon atoms. [Formula 1] (In formula (1), X is a group represented by formula (i), (ii), (iii), or (iv) below; and symbols * are sites binding respectively to adjacent two carbon atoms constituting the aromatic hydrocarbon ring structure.) [Formula 2] (In formula (i), R1is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R2is a monovalent organic group having 1-20 carbon atoms. In formula (ii), R3is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R4is a monovalent organic group having 1-20 carbon atoms. In formula (iii), R5is a monovalent organic group having 1-20 carbon atoms. In formula (iv), R6 is a monovalent organic group having 1-20 carbon atoms.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • H01L 21/3065 - Plasma etching; Reactive-ion etching

48.

COMPOSITION, COMPOUND, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2023025665
Publication Number 2024/029292
Status In Force
Filing Date 2023-07-12
Publication Date 2024-02-08
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,shinya
  • Katagiri,takashi
  • Naganawa,atsuko
  • Yamada,shuhei
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abstract

The purpose of the present invention is to provide a method for manufacturing a semiconductor substrate using a composition capable of forming a film having excellent etching resistance; and to provide said composition. The composition according to the present invention comprises a solvent and a compound having a partial structure represented by formula (1) below, wherein the molecular weight of the compound is greater than or equal to 600. (In formula (1), Ar1is a substituted or unsubstituted monovalent aromatic group having 5-30 ring members. n is an integer of 1-3. Ar2is a portion of a substituted or unsubstituted aromatic ring structure having 5-60 ring members and is formed together with two adjacent carbon atoms in formula (1). X1 represents a single bond or a divalent linking group .Each * is a bonding site with the two adjacent carbon atoms constituting the substituted or unsubstituted aromatic ring having 5-60 ring members. ** is a bonding site with a portion other than the partial structure represented by formula (1) in the abovementioned compound. r is an integer of 0-4.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C07C 13/58 - Completely or partially hydrogenated anthracenes
  • C07C 13/62 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings
  • C07C 13/66 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings the condensed ring system contains only four rings
  • C07C 39/17 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings containing other rings in addition to the six-membered aromatic rings
  • C07D 487/04 - Ortho-condensed systems
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

49.

METHOD FOR PRODUCING CARRIER FOR CHROMATOGRAPHY, AND CARRIER FOR CHROMATOGRAPHY

      
Application Number JP2023027099
Publication Number 2024/029394
Status In Force
Filing Date 2023-07-25
Publication Date 2024-02-08
Owner JSR CORPORATION (Japan)
Inventor
  • Inoue, Yukiya
  • Miyajima, Ken
  • Kamide, Tomoyuki
  • Noguchi, Hiroshi
  • Nakamura, Satoshi

Abstract

The present invention provides a carrier which is for chromatography, which has a large dynamic binding capacity with respect to an antibody or a fragment thereof, and through which a protein ligand is unlikely to leak even when the carrier is repeatedly used for isolation of an antibody. Provided is a method for producing a carrier for chromatography, said method comprising the following steps A-1 and B. (Step A-1) A step for immobilizing, to porous particles, one or more ligands selected from protein A, protein G, protein L, and analogues thereof. (Step B) A step for reacting the porous particles to which the one or more ligands have been immobilized in the step A-1 and a compound which has at least one ligand reactive group selected from groups represented by -C(=O)-O-C(=O)-, carbodiimide groups, and cyclic ether groups.

IPC Classes  ?

  • C07K 1/22 - Affinity chromatography or related techniques based upon selective absorption processes
  • C07K 16/00 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies
  • B01D 15/38 - Selective adsorption, e.g. chromatography characterised by the separation mechanism involving specific interaction not covered by one or more of groups , e.g. affinity, ligand exchange or chiral chromatography
  • B01J 20/24 - Naturally occurring macromolecular compounds, e.g. humic acids or their derivatives
  • B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
  • B01J 20/30 - Processes for preparing, regenerating or reactivating
  • C07K 14/31 - Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria from Micrococcaceae (F) from Staphylococcus (G)

50.

THERAPEUTIC AGENT FOR OVARIAN CLEAR CELL CARCINOMA

      
Application Number JP2023028482
Publication Number 2024/029608
Status In Force
Filing Date 2023-08-03
Publication Date 2024-02-08
Owner
  • JSR CORPORATION (Japan)
  • KEIO UNIVERSITY (Japan)
Inventor
  • Ookubo Aki
  • Chiyoda Tatsuyuki
  • Yoshimura Takuma

Abstract

Provided is a therapeutic agent that is effective for the treatment of ovarian clear cell carcinoma. The therapeutic agent for ovarian clear cell carcinoma contains a proteasome inhibitor as an active ingredient. Moreover, said proteasome inhibitor is a substance that reversibly or irreversibly binds to the 20s β5 subunit of a proteasome and inhibits chymotrypsin-like activity. Furthermore, said proteasome is 26s proteasome. The content ratio of the proteasome inhibitor in the therapeutic agent for ovarian clear cell carcinoma is 80 mass% or greater, 90 mass% or greater, or 100 mass%.

IPC Classes  ?

  • A61K 45/00 - Medicinal preparations containing active ingredients not provided for in groups
  • A61P 15/00 - Drugs for genital or sexual disorders; Contraceptives
  • A61P 35/00 - Antineoplastic agents
  • A61K 31/69 - Boron compounds

51.

POLYETHYLENE-BASED RESIN MULTILAYER FOAM SHEET AND METHOD FOR PRODUCING SAME

      
Application Number 18258874
Status Pending
Filing Date 2021-10-01
First Publication Date 2024-02-08
Owner JSP CORPORATION (Japan)
Inventor
  • Kakuta, Hirotoshi
  • Fujita, Mikidai
  • Katsuyama, Naoya

Abstract

A polyethylene-based resin multilayer foam sheet may include a polyethylene-based resin foam layer containing a polyethylene-based resin (A) as a base resin, and a conductive layer laminated on at least one side of the foam layer. The conductive layer contains: a mixed resin of one or more polyethylenes (B) of low-density polyethylenes and/or linear low-density polyethylenes and an ethylene-based copolymer (C) having a structural unit derived from ethylene and a structural unit derived from a monomer having a polar group; and conductive carbon. The conductive carbon blended in the conductive layer may be in a range of from 3 to 15 wt. %. The difference, TmB−TmC, between the melting point TmB of the polyethylene (B) and the melting point TmC of the ethylene-based copolymer (C) each contained in the conductive layer may be in a range of from 30 to 80° C.

IPC Classes  ?

  • B32B 27/06 - Layered products essentially comprising synthetic resin as the main or only constituent of a layer next to another layer of a specific substance
  • B32B 27/32 - Layered products essentially comprising synthetic resin comprising polyolefins
  • B32B 27/30 - Layered products essentially comprising synthetic resin comprising acrylic resin
  • B32B 37/15 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer being manufactured and immediately laminated before reaching its stable state, e.g. in which a layer is extruded and laminated while in semi-molten state
  • B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material

52.

POLYAMIDE-BASED RESIN FOAM PARTICLE AND POLYAMIDE-BASED RESIN FOAM PARTICLE MOLDED ARTICLE

      
Application Number JP2023027244
Publication Number 2024/029407
Status In Force
Filing Date 2023-07-25
Publication Date 2024-02-08
Owner JSP CORPORATION (Japan)
Inventor Suenaga Katsuyuki

Abstract

Provided are polyamide-based resin foam particles comprising a polyamide-based resin as a base material resin, the foam particles containing carbon nanotubes, wherein the closed-cell ratio of the foam particles is 70% or more.

IPC Classes  ?

53.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2023027258
Publication Number 2024/024801
Status In Force
Filing Date 2023-07-25
Publication Date 2024-02-01
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Miyao, Kensuke
  • Okazaki, Satoshi

Abstract

This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). L1represents a group having a (thio)acetal ring or the like. W1represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rfrepresents a fluorine atom, or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1are same or different, and a plurality of R2are same or different. When d represents 2, a plurality of W1are same or different, and a plurality of b are same or different. M+ represents a monovalent cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 381/12 - Sulfonium compounds
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

54.

POLYAMIDE RESIN FOAM PARTICLES

      
Application Number JP2023026977
Publication Number 2024/024716
Status In Force
Filing Date 2023-07-24
Publication Date 2024-02-01
Owner JSP CORPORATION (Japan)
Inventor Yamanaka Ryo

Abstract

The present invention provides polyamide resin foam particles which use, as a base material resin, a mixed resin of a polyamide resin A and a polyamide resin B, wherein: the polyamide resin A is an aliphatic polyamide; the polyamide resin B is a xylylene group-containing polyamide resin; and the mass ratio ((polyamide resin A):(polyamide resin B)) of the polyamide resin A to the polyamide resin B is 97:3 to 60:40.

IPC Classes  ?

  • C08J 9/16 - Making expandable particles
  • C08L 77/00 - Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers

55.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATE, AND ELECTRONIC COMPONENT

      
Application Number 18373415
Status Pending
Filing Date 2023-09-27
First Publication Date 2024-01-25
Owner JSR CORPORATION (Japan)
Inventor
  • Kawashima, Naoyuki
  • Yamashita, Yuutoku
  • Anabuki, Shoma
  • Kameyama, Takeru
  • Nishino, Kenta
  • Shinohara, Arata
  • Fujitomi, Shintarou

Abstract

One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: wherein X's are each independently —O—, —S—, or —N(R3)—, R3 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one selected from an oxygen atom and a sulfur atom, R1 is a divalent organic group, and R2 is a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring; One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: wherein X's are each independently —O—, —S—, or —N(R3)—, R3 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one selected from an oxygen atom and a sulfur atom, R1 is a divalent organic group, and R2 is a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring; —Y  (a) wherein Y is a group containing an ethylenically unsaturated double bond and having 3 to 50 carbon atoms, an unsubstituted or substituted aromatic hydrocarbon group having 6 to 50 carbon atoms, an unsubstituted or substituted aliphatic hydrocarbon group having 3 to 50 carbon atoms, or an unsubstituted nitrogen-containing heteroaromatic ring, and when the aromatic hydrocarbon group or the aliphatic hydrocarbon group has a substituent, the substituent is a group other than a hydroxy group.

IPC Classes  ?

  • C08G 61/12 - Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
  • C08G 65/48 - Polymers modified by chemical after-treatment
  • C08K 5/3415 - Five-membered rings
  • C08K 5/14 - Peroxides
  • C08K 3/36 - Silica
  • H05K 1/03 - Use of materials for the substrate

56.

POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND MOLDED ARTICLE THEREOF

      
Application Number 18217651
Status Pending
Filing Date 2023-07-03
First Publication Date 2024-01-25
Owner JSP CORPORATION (Japan)
Inventor Masumoto, Hisashi

Abstract

An expanded bead of polypropylene-based resin formed with a through hole that is defined by an inner peripheral surface and that has an average hole diameter of 1 mm or less. The expanded bead has a closed cell content of 85% or more, an average cell diameter of 50 to 300 μm and an inner surface portion that extends along the inner peripheral surface that has an average cell diameter of 5 to 150 μm which is smaller than the average cell diameter of the expanded bead.

IPC Classes  ?

  • B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads

57.

PHOTOCATALYTIC SYNTHESIS OF ALPHA, BETA UNSATURATED CARBONYL COMPOUNDS AND THEIR INTERMEDIATES

      
Application Number US2022037417
Publication Number 2024/019698
Status In Force
Filing Date 2022-07-18
Publication Date 2024-01-25
Owner
  • JSR CORPORATION (Japan)
  • NEW IRIDIUM INC. (USA)
Inventor
  • Suguri, Takuya
  • Maruyama, Youichirou
  • Lim, Chern-Hooi
  • Qian, Gang
  • Liu, Yue
  • Cope, Elana

Abstract

Described herein is a process of producing α,β unsaturated acids and amides and their intermediates via a photocatalytic reaction in the presence of a photocatalyst, oxygen, and optionally a solvent. The photocatalyst contains a tungstic acid or a salt of a tungstic acid. The process is simple, clean, and energy efficient, and provides good conversion, good selectivity, good turnover, and easy purification of end products.

IPC Classes  ?

  • C07C 51/367 - Preparation of carboxylic acids or their salts, halides, or anhydrides by reactions not involving formation of carboxyl groups by introduction of functional groups containing oxygen only in singly bound form
  • C07C 51/377 - Preparation of carboxylic acids or their salts, halides, or anhydrides by reactions not involving formation of carboxyl groups by hydrogenolysis of functional groups
  • C07C 407/00 - Preparation of peroxy compounds
  • C07C 409/04 - Peroxy compounds the —O—O— group being bound between a carbon atom, not further substituted by oxygen atoms, and hydrogen, i.e. hydroperoxides the carbon atom being acyclic
  • C07C 57/04 - Acrylic acid; Methacrylic acid
  • C07C 59/01 - Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups

58.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Application Number 18374041
Status Pending
Filing Date 2023-09-28
First Publication Date 2024-01-25
Owner JSR CORPORATION (Japan)
Inventor
  • Maruyama, Ken
  • Abe, Takayoshi
  • Sakai, Kazunori

Abstract

A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.

IPC Classes  ?

  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • G03F 7/004 - Photosensitive materials

59.

METHOD FOR PRODUCING FOAM BLOW MOLDED BODY, AND FOAM BLOW MOLDED BODY

      
Application Number JP2023026245
Publication Number 2024/019042
Status In Force
Filing Date 2023-07-18
Publication Date 2024-01-25
Owner JSP CORPORATION (Japan)
Inventor
  • Gomibuchi Masahiro
  • Noro Jinichiro

Abstract

The present invention provides a method for producing a foam blow molded body, the method comprising a step for blow molding a foamed parison that is obtained by foaming a mixed resin of a polyolefin resin (A) and an olefin-based thermoplastic elastomer (B). With respect to this method for producing a foam blow molded body, the polyolefin resin (A) is composed of a branched homopolypropylene (a1) and a linear block polypropylene (a2); the mass ratio ((a1):(a2)) of the branched homopolypropylene (a1) to the linear block polypropylene (a2) is 50:50 to 93:7; the olefin-based thermoplastic elastomer (B) is a hydrogenated product of a triblock copolymer that is composed of a crystalline olefin polymer block and a polymer block of a conjugated diene compound; and the added amount of the olefin-based thermoplastic elastomer (B) relative to 100 parts by mass of the polyolefin resin (A) is 20 parts by mass to 40 parts by mass in the mixed resin.

IPC Classes  ?

  • C08J 9/04 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
  • B29C 49/04 - Extrusion blow-moulding

60.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Application Number 18372163
Status Pending
Filing Date 2023-09-25
First Publication Date 2024-01-18
Owner JSR CORPORATION (Japan)
Inventor
  • Maruyama, Ken
  • Abe, Takayoshi
  • Sakai, Kazunori

Abstract

A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. An exposed portion of the exposed metal-containing resist film is dissolved with a developer to form a resist pattern.

IPC Classes  ?

  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • H01L 21/311 - Etching the insulating layers
  • G03F 7/16 - Coating processes; Apparatus therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - Exposure; Apparatus therefor

61.

METHOD FOR MANUFACTURING LAMINATE

      
Application Number 18033741
Status Pending
Filing Date 2021-10-08
First Publication Date 2024-01-18
Owner JSP Corporation (Japan)
Inventor
  • Hisamatsu, Katsunori
  • Hashimoto, Keiichi

Abstract

The present invention relates to a method for producing a laminate, wherein the laminate is obtained by integrally laminating an expanded beads molded article (a) composed of expanded beads A and having interconnected voids and an expanded beads molded article (b) composed of expanded particles B and having interconnected voids, the difference [Pb−Pa] between the voidage (Pa) of the expanded beads molded article (a) and the voidage (Pb) of the expanded beads molded article (b) is 5% or more, and the expanded beads A and the expanded beads B satisfy the following (1) to (3): (1) a difference [dB−dA] between an average hole diameter (dA) of the through-holes of the expanded beads (A) and an average hole diameter (dB) of the through-holes of the expanded beads (B) is 0.3 mm or more and 2 mm or less; (2) the expanded beads (B) have an average outer diameter DB of 3.5 mm or more and 5 mm or less; (3) a difference [DB−DA] between an average outer diameter DA of the expanded beads (A) and an average outer diameter DB of the expanded beads (B) is −0.3 mm or more and 2 mm or less.

IPC Classes  ?

  • B29C 44/20 - Shaping by internal pressure generated in the material, e.g. swelling or foaming for articles of indefinite length
  • B29K 23/00 - Use of polyalkenes as moulding material
  • B29K 105/04 - Condition, form or state of moulded material cellular or porous

62.

THERMOPLASTIC RESIN EXPANDED BEAD AND MOLDED ARTICLE OF THERMOPLASTIC RESIN EXPANDED BEADS

      
Application Number 18349308
Status Pending
Filing Date 2023-07-10
First Publication Date 2024-01-18
Owner JSP CORPORATION (Japan)
Inventor
  • Sakamura, Takumi
  • Ohta, Hajime

Abstract

A thermoplastic resin expanded bead and a molded article composed of the thermoplastic resin expanded beads are provided. The expanded bead includes a foam layer containing a thermoplastic resin. The expanded bead has a columnar shape, and has two or more and eight or less through-holes penetrating in the axial direction thereof. A ratio Ct/A of a total cross-sectional area Ct of the through-holes to a cross-sectional area A of the expanded bead in a cut surface obtained by cutting the expanded bead along a plane perpendicular to the axial direction at the center in the axial direction is 0.02 or more and 0.15 or less.

IPC Classes  ?

63.

COMPOSITION FOR 3D PRINTING SUPPORT OR 3D CELL CULTURE SUPPORT

      
Application Number JP2023024928
Publication Number 2024/014377
Status In Force
Filing Date 2023-07-05
Publication Date 2024-01-18
Owner JSR CORPORATION (Japan)
Inventor
  • Akiyama, Minato
  • Kobayashi, Kunihiko

Abstract

Provided is a composition that has exceptional salt resistance and is useful as a 3D printing support or a 3D cell culture support. A composition for a 3D printing support or a 3D cell culture support, the composition containing component (A) and component (B). (A) A polymer having structural units represented by formula (1). (B) An aqueous medium. [In formula (1), R1and R2each independently represent a hydrogen atom or a C1-10 alkyl group, or R1and R2 may bond to each other to form a C3-10 ring structure.]

IPC Classes  ?

  • C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
  • B33Y 10/00 - Processes of additive manufacturing
  • B33Y 70/00 - Materials specially adapted for additive manufacturing
  • B33Y 80/00 - Products made by additive manufacturing
  • C08F 126/00 - Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
  • C08L 39/00 - Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocycli; Compositions of derivatives of such polymers
  • C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

64.

METHOD FOR PRODUCING TWO-DIMENSIONAL SMALL INTESTINAL ORGANOIDS HAVING VILLUS STRUCTURE

      
Application Number 18039534
Status Pending
Filing Date 2021-12-03
First Publication Date 2024-01-11
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Sato, Toshiro
  • Sugimoto, Shinya
  • Arai, Kazuya

Abstract

A method for producing a two-dimensional small intestinal organoid having a villus structure, the method including a step 1 of culturing a cell derived from a small intestinal epithelium in an extracellular matrix to obtain a three-dimensional small intestinal organoid, a step 2 of dispersing the three-dimensional small intestinal organoid and monolayer culturing on the extracellular matrix to obtain a two-dimensional small intestinal organoid, and a step 3 of further culturing the two-dimensional small intestinal organoid while letting a culture medium of the two-dimensional small intestinal organoid to flow so that the two-dimensional small intestinal organoid forms a villus structure.

IPC Classes  ?

  • G01N 33/50 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
  • C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

65.

COMPOSITION FOR FORMING COATING LAYER OF OPTICAL FIBER AND CURED LAYER THEREOF, OPTICAL FIBER HAVING CURED LAYER, AND USE THEREOF

      
Application Number 18252057
Status Pending
Filing Date 2021-11-17
First Publication Date 2024-01-11
Owner Japan Fine Coatings Co., Ltd. (Japan)
Inventor
  • Nakajima, Takumi
  • Shinohara, Noriyasu

Abstract

Provided is a composition for forming a coating layer of an optical fiber, the composition comprising a compound having a structure represented by the following formula (I): Provided is a composition for forming a coating layer of an optical fiber, the composition comprising a compound having a structure represented by the following formula (I): *—NH—CO—N(R1)—R2—SiR3n—(OR4)3-n  (I) Provided is a composition for forming a coating layer of an optical fiber, the composition comprising a compound having a structure represented by the following formula (I): *—NH—CO—N(R1)—R2—SiR3n—(OR4)3-n  (I) wherein, R1 is a hydrogen atom, an alkyl group, or an aryl group, R2 is a methylene group optionally substituted with a halogen, a C2-10 alkylene group that may have a heteroatom or an atomic group having a heteroatom between carbon atoms and may optionally be substituted with a halogen, or a phenylene group that may have a substituent, R3 is an alkyl group, and R4 is a C1-6 alkyl group, * being a bond and n indicating an integer of 0 or more and 2 or less.

IPC Classes  ?

66.

FOAM PARTICLE MOULDED ARTICLE, SOLE CUSHION, AND METHOD FOR PRODUCING FOAM PARTICLES

      
Application Number 18368441
Status Pending
Filing Date 2023-09-14
First Publication Date 2024-01-04
Owner JSP Corporation (Japan)
Inventor
  • Takagi, Shota
  • Oikawa, Masaharu

Abstract

The present invention relates to an in-mold expanded beads molded article of expanded beads of an olefin thermoplastic elastomer, a cushion for shoe sole, and a method of producing expanded beads provided with through-holes and composed of a block copolymer of a polyethylene block and an ethylene/α-olefin copolymer block, and with respect to the in-mold expanded beads molded article of expanded beads of an olefin thermoplastic elastomer, a voidage of the expanded beads molded article is 5 to 40%; a density of the expanded beads molded article is 30 to 150 g/L; and a flexural modulus of the olefin thermoplastic elastomer that constitutes the expanded beads molded article is 10 to 100 MPa.

IPC Classes  ?

  • C08J 9/232 - Forming foamed products by sintering expandable particles
  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
  • C08J 9/228 - Forming foamed products

67.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18025989
Status Pending
Filing Date 2021-08-03
First Publication Date 2024-01-04
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains one or two or more onium salts containing an organic acid anion moiety and an onium cation moiety, a compound having a structure in which an alkoxycarbonyl group is bonded to a nitrogen atom, and a solvent, wherein at least part of the organic acid anion moiety in the onium salt contains an iodine-substituted aromatic ring structure, and at least part of the onium cation moiety contains a fluorine-substituted aromatic ring structure.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

68.

COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number 18218193
Status Pending
Filing Date 2023-07-05
First Publication Date 2024-01-04
Owner JSR CORPORATION (Japan)
Inventor
  • Kasai, Tatsuya
  • Furusawa, Ayaka
  • Sakai, Kazunori
  • Serizawa, Ryuichi

Abstract

A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms. A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 77/04 - Polysiloxanes
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

69.

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR RESIN FILM HAVING PATTERN, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT SUBSTRATE

      
Application Number JP2023019497
Publication Number 2024/004462
Status In Force
Filing Date 2023-05-25
Publication Date 2024-01-04
Owner JSR CORPORATION (Japan)
Inventor
  • Ito Hirokazu
  • Ogawa Taku
  • Ando Mitsuka
  • Tatara Ryoji

Abstract

A negative photosensitive resin composition comprising: a polymer (A); a crosslinking agent (B); and a photo-cation generator (C), wherein the polymer (A) has a structural unit represented by formula (a2) and has, at a terminal, a reactive group Y that reacts with the crosslinking agent (B) by the action of cations generated from the photo-cation generator (C) through light irradiation, and the photo-cation generator (C) includes a photo-cation generator (C1) that generates, through light irradiation, an acid having a pKa(1) of at least -3 and at most 3 as calculated using a Gaussian function based on the pKa of methanesulfonic acid in an aqueous solution of 25°C.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - Exposure; Apparatus therefor

70.

COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, POLYMER, AND METHOD FOR MANUFACTURING POLYMER

      
Application Number 18244460
Status Pending
Filing Date 2023-09-11
First Publication Date 2023-12-28
Owner JSR CORPORATION (Japan)
Inventor
  • Nakatsu, Hiroki
  • Yamada, Shuhei
  • Abe, Shinya
  • Tsuji, Takashi
  • Ueda, Kanako
  • Miyauchi, Hiroyuki

Abstract

A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom. A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom.

IPC Classes  ?

  • C08F 28/06 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a heterocyclic ring containing sulfur
  • C08F 24/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen

71.

COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, POLYMER, AND METHOD FOR MANUFACTURING POLYMER

      
Application Number 18239373
Status Pending
Filing Date 2023-08-29
First Publication Date 2023-12-28
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada, Shuhei
  • Abe, Shinya
  • Tsuji, Takashi
  • Ueda, Kanako
  • Nakatsu, Hiroki
  • Miyauchi, Hiroyuki

Abstract

A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2). A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

IPC Classes  ?

  • C08G 61/02 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

72.

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN FORMATION METHOD

      
Application Number JP2023013354
Publication Number 2023/248569
Status In Force
Filing Date 2023-03-30
Publication Date 2023-12-28
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya Takuya
  • Nishikori Katsuaki
  • Kiriyama Kazuya
  • Matsumura Yuushi
  • Terada Nozomi

Abstract

Provided is a radiation-sensitive resin composition comprising: a polymer which has a first structural unit represented by formula (1) and of which the solubility in a developing solution is changed by the action of an acid; a radiation-sensitive acid generator; and an acid diffusion regulator which has a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/10 - Esters
  • G03F 7/004 - Photosensitive materials

73.

METHOD FOR PRODUCING POLYAMIDE-BASED RESIN MULTI-STAGE-EXPANDED BEADS

      
Application Number 18030561
Status Pending
Filing Date 2021-10-13
First Publication Date 2023-12-21
Owner JSP CORPORATION (Japan)
Inventor Otsuka, Tetsu

Abstract

A method for producing polyamide-based resin multi-stage expanded beads includes an internal pressure applying step of placing polyamide-based resin expanded beads in a pressure-resistant container, impregnating the polyamide-based resin expanded beads with a physical blowing agent in the pressure-resistant container to apply internal pressure higher than atmospheric pressure; and a heating and foaming step of heating and expanding the polyamide-based resin expanded beads to which internal pressure is applied obtained in the internal pressure applying step to obtain polyamide-based resin multi-stage expanded beads having apparent density lower than that of polyamide-based resin expanded beads used in the internal pressure applying step, in the internal pressure applying step, polyamide-based resin expanded beads in a wet state having a water content of 1% or more being impregnated with the physical blowing agent at a temperature higher than change-point temperature of storage modulus of the polyamide-based resin expanded beads in a wet state.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
  • C08J 9/228 - Forming foamed products

74.

PHOTOSENSITIVE RESIN COMPOSITION, PATTERNED RESIN FILM, METHOD FOR PRODUCING PATTERNED RESIN FILM, AND SEMICONDUCTOR CIRCUIT SUBSTRATE

      
Application Number JP2023014565
Publication Number 2023/243199
Status In Force
Filing Date 2023-04-10
Publication Date 2023-12-21
Owner JSR CORPORATION (Japan)
Inventor
  • Ogawa Taku
  • Nakafuji Shin-Ya
  • Ando Mitsuka
  • Kanno Kimiyuki
  • Tatara Ryoji
  • Ito Hirokazu

Abstract

An embodiment of the present invention relates to a photosensitive resin composition, a patterned resin film, a method for producing a patterned resin film, and a semiconductor circuit substrate. The photosensitive resin composition comprises: a polymer (A) that is at least one selection from the group consisting of polyimides and polyimide precursors, that contains a structural unit (a) containing a structural unit derived from an acid anhydride represented by formula (1) and contains a diamine-derived structural unit (b), and that has, e.g., a maleimide group, at a terminal on the polymer; (B) a photopolymerization initiator; and (D) a solvent. [In formula (1), L represents a single bond, etc.; R1to R3represents a hydrogen atom, etc., or represents an alkylene group formed by the bonding of the R1and R2(or R3) in the same ring with each other; n1and n2represent an integer from 0 to 3; and Y1represents a structure given by (Y1)(-Ar1-), etc.]

IPC Classes  ?

  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • G03F 7/20 - Exposure; Apparatus therefor

75.

PHOTOSENSITIVE RESIN COMPOSITION, RESIN FILM HAVING PATTERN, METHOD FOR PRODUCING RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT BOARD

      
Application Number JP2023014564
Publication Number 2023/243198
Status In Force
Filing Date 2023-04-10
Publication Date 2023-12-21
Owner JSR CORPORATION (Japan)
Inventor
  • Okuda Ryuichi
  • Doi Takashi
  • Tatara Ryoji
  • Ito Hirokazu

Abstract

One aspect of the present invention relates to: a photosensitive resin composition; a resin film having a pattern; a method for producing a resin film having a pattern; and a semiconductor circuit board. The photosensitive resin composition contains: (A) a polymer which is at least one type selected from the group consisting of a polyimide and a polyimide precursor and which contains a structural unit (a) including a structural unit derived from an acid anhydride represented by formula (1) and a structural unit (b) derived from a diamine; (B) a naphthoquinonediazide compound; (C1) a crosslinkable compound having a methylol group or an alkoxymethyl group; and (D) a solvent. [In formula (1): L denotes a single bond or the like; R1to R3each denote a hydrogen atom or the like, or denote an alkylene group formed by bonding RR1and R2(or R3) of the same ring; n1to n2each denote an integer between 0 and 3; and Y1denotes a structure represented by a formula such as (Y1)(-Ar1-).]

IPC Classes  ?

  • G03F 7/023 - Macromolecular quinonediazides; Macromolecular additives, e.g. binders
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - Exposure; Apparatus therefor

76.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND

      
Application Number 18198971
Status Pending
Filing Date 2023-05-18
First Publication Date 2023-12-14
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Sakano, Nozomi

Abstract

A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1). R1 is a monovalent hydrocarbon group having 1 to 20 carbon atoms; R2 and R3 are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms, or R2 and R3 taken together represent a cyclic structure having 3 to 20 ring atoms; R4 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms and L1 is a divalent linking group having 1 to 40 carbon atoms, or R4 and L1 taken together represent a group including a heterocyclic structure having 3 to 20 ring atoms; Rf1 and Rf2 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms. A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1). R1 is a monovalent hydrocarbon group having 1 to 20 carbon atoms; R2 and R3 are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms, or R2 and R3 taken together represent a cyclic structure having 3 to 20 ring atoms; R4 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms and L1 is a divalent linking group having 1 to 40 carbon atoms, or R4 and L1 taken together represent a group including a heterocyclic structure having 3 to 20 ring atoms; Rf1 and Rf2 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08F 220/36 - Esters containing nitrogen containing oxygen in addition to the carboxy oxygen
  • C08F 220/38 - Esters containing sulfur
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C07C 381/12 - Sulfonium compounds
  • C07D 211/62 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals attached in position 4
  • C07D 211/60 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 207/16 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 327/06 - Six-membered rings
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07D 405/12 - Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C07D 493/10 - Spiro-condensed systems

77.

METHOD FOR PRODUCING VERTICAL ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE, DISPLAY

      
Application Number JP2023020441
Publication Number 2023/238765
Status In Force
Filing Date 2023-06-01
Publication Date 2023-12-14
Owner
  • JSR CORPORATION (Japan)
  • MATTRIX TECHNOLOGIES, INC. (USA)
Inventor
  • Katsui,hiromitsu
  • Liu,bo
  • Lemaitre,maxime
  • Yasuda,hiroyuki

Abstract

The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.

IPC Classes  ?

  • H10K 50/30 - Organic light-emitting transistors
  • C01B 32/174 - Derivatisation; Solubilisation; Dispersion in solvents
  • C08L 79/08 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
  • H10K 71/12 - Deposition of organic active material using liquid deposition, e.g. spin coating
  • H10K 71/60 - Forming conductive regions or layers, e.g. electrodes
  • H10K 85/10 - Organic polymers or oligomers
  • H10K 85/20 - Carbon compounds, e.g. carbon nanotubes or fullerenes

78.

EXOSOME COMPLEX AND MANUFACTURING METHOD THEREOF

      
Application Number JP2023020906
Publication Number 2023/238837
Status In Force
Filing Date 2023-06-06
Publication Date 2023-12-14
Owner JSR CORPORATION (Japan)
Inventor
  • Hori Miyuki
  • Nakagawa Fumiko
  • Shinoda Tatsuya
  • Hayase Yoji

Abstract

Provided are an exosome complex capable of achieving higher therapeutic effects than conventional products, and a manufacturing method thereof. This exosome complex contains an exosome and affinity molecules for a target cell, said affinity molecules including a hydrophobic moiety anchoring to the membrane surface of the exosome and an affinity moiety for the target cell, wherein 5 or more on average of the affinity molecules are contained per exosome.

IPC Classes  ?

  • C12N 5/07 - Animal cells or tissues
  • C12N 5/0775 - Mesenchymal stem cells; Adipose-tissue derived stem cells
  • C12N 15/115 - Aptamers, i.e. nucleic acids binding a target molecule specifically and with high affinity without hybridising therewith
  • C12N 15/88 - Introduction of foreign genetic material using processes not otherwise provided for, e.g. co-transformation using microencapsulation, e.g. using liposome vesicle

79.

RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18266061
Status Pending
Filing Date 2021-11-15
First Publication Date 2023-12-14
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive composition includes: a polymer (A) including a structural unit having a hydroxyl group bonded to an aromatic ring; and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), in which, at least one compound selected from the group consisting of the polymer (A) and the acid-generating compound includes a radiation-sensitive onium cation structure [X] having two or more of at least one substituent β selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded); and an organic anion structure [Y] having an iodo group, in the same compound or different compounds.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

80.

METHOD FOR PRODUCING VERTICAL ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE, DISPLAY

      
Application Number 17836389
Status Pending
Filing Date 2022-06-09
First Publication Date 2023-12-14
Owner
  • JSR CORPORATION (Japan)
  • Mattrix Technologies, Inc (USA)
Inventor
  • Katsui, Hiromitsu
  • Liu, Bo
  • Lemaitre, Maxime
  • Yasuda, Hiroyuki

Abstract

The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.

IPC Classes  ?

  • H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
  • H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
  • H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices

81.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND

      
Application Number 18239399
Status Pending
Filing Date 2023-08-29
First Publication Date 2023-12-14
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Kaneko, Tetsurou

Abstract

A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; R2, R3, and R4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R5 represents a monovalent organic group having 1 to 20 carbon atoms; and L represents a single bond or a divalent organic group having 1 to 20 carbon atoms. A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; R2, R3, and R4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R5 represents a monovalent organic group having 1 to 20 carbon atoms; and L represents a single bond or a divalent organic group having 1 to 20 carbon atoms.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C07C 69/54 - Acrylic acid esters; Methacrylic acid esters
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/24 - Esters containing halogen containing perhaloalkyl radicals
  • C08F 220/22 - Esters containing halogen
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • C08F 220/34 - Esters containing nitrogen

82.

METHOD FOR PRODUCING ELECTROCONDUCTIVE FILM, TOUCH PANEL, DISPLAY PANEL

      
Application Number JP2023016108
Publication Number 2023/238530
Status In Force
Filing Date 2023-04-24
Publication Date 2023-12-14
Owner JSR CORPORATION (Japan)
Inventor
  • Katsui,hiromitsu
  • Yasuda,hiroyuki

Abstract

Provided is a method for producing an electroconductive film that has high electroconductivity and is capable of evenly fixing an electroconductive carbon material over the entirety of an electroconductive film formation region. The method includes a step (A) for applying an organic resin material that contains a polymer having a hydrocarbon group to a base material and forming an organic resin layer, a step (B) for applying a liquid dispersion that contains a dispersant and carbon nanotubes to the organic resin layer and forming a coating film after step (A), a step (C) for drying the coating film after step (B), and a step (D) for implementing dispersant extraction to remove the dispersant from the coating film after step (C).

IPC Classes  ?

  • B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
  • B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
  • B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
  • B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials

83.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER, AND COMPOUND

      
Application Number 18235420
Status Pending
Filing Date 2023-08-18
First Publication Date 2023-12-07
Owner JSR CORPORATION (Japan)
Inventor
  • Sakano, Nozomi
  • Nemoto, Ryuichi

Abstract

A radiation-sensitive resin composition includes a resin including a structural unit represented by formula (1), a radiation-sensitive acid generator, and a solvent. R1 is a hydrogen atom, a fluorine atom, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R4 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R5 and R6 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R7 and R8 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R9 and R10 each independently represent a monovalent organic group having 1 to 10 carbon atoms, or the like. A radiation-sensitive resin composition includes a resin including a structural unit represented by formula (1), a radiation-sensitive acid generator, and a solvent. R1 is a hydrogen atom, a fluorine atom, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R4 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R5 and R6 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R7 and R8 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R9 and R10 each independently represent a monovalent organic group having 1 to 10 carbon atoms, or the like.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
  • C07D 493/10 - Spiro-condensed systems
  • C07D 317/24 - Radicals substituted by singly bound oxygen or sulfur atoms esterified
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

84.

POLYOLEFIN RESIN FOAM PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2023018806
Publication Number 2023/234078
Status In Force
Filing Date 2023-05-19
Publication Date 2023-12-07
Owner JSP CORPORATION (Japan)
Inventor Nohara Tokunobu

Abstract

This method for manufacturing polyolefin resin foam particles includes: a dispersion step for dispersing polyolefin resin particles in an aqueous medium; a foaming agent addition step for adding a physical foaming agent to inside an airtight container; and a foaming step for impregnating the resin particles with the physical foaming agent inside the airtight container, followed by releasing the resin particles from the airtight container together with the aqueous medium, and causing the resin particles to foam, thereby producing foam particles having an apparent density of 10 kg/m3to 80 kg/m3. The physical foaming agent contains a hydrofluoroolefin. The added amount of the hydrofluoroolefin in the foaming agent addition step is 10 to 30 parts by mass with respect to 100 parts by mass of resin particles.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

85.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023018515
Publication Number 2023/228841
Status In Force
Filing Date 2023-05-18
Publication Date 2023-11-30
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abstract

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2) (excluding a compound corresponding to the first onium salt compound), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4represents a monovalent organic group having 1 to 40 carbon atoms; one of Rf21and Rf22represents a fluorine atom and the other represents a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar represents a monovalent organic group having a 5- to 40-membered aromatic ring; R5to R8122 each independently represent an integer of 1 to 6; and X represents a single bond or a bivalent hetero-atom-containing group.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor
  • C09K 3/00 - Materials not provided for elsewhere

86.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023018519
Publication Number 2023/228843
Status In Force
Filing Date 2023-05-18
Publication Date 2023-11-30
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abstract

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and an alcohol-type solvent having a boiling point of 90°C or higher. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, or a monovalent hydrocarbon group; one of Rf11and Rf1211 + represents a monovalent radiation-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

87.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023018526
Publication Number 2023/228845
Status In Force
Filing Date 2023-05-18
Publication Date 2023-11-30
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abstract

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity and LWR performance can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms or a group having such a structure that in which a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; one of Rf11and Rf1211 +represents a monovalent radiation-sensitive onium cation.) (In formula (2), R422 + represents a monovalent organic cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

88.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND

      
Application Number 18135838
Status Pending
Filing Date 2023-04-18
First Publication Date 2023-11-30
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Matsumura, Yuushi
  • Kinoshita, Natsuko

Abstract

A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group. A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 136/16 - Homopolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds conjugated containing elements other than carbon and hydrogen containing halogen
  • C07C 69/653 - Acrylic acid esters; Methacrylic acid esters; Haloacrylic acid esters; Halomethacrylic acid esters

89.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023018516
Publication Number 2023/228842
Status In Force
Filing Date 2023-05-18
Publication Date 2023-11-30
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abstract

Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when forming a resist pattern with a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition contains: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit that has an acid-dissociable group; and a solvent. (In formula (1), R1is a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group including a divalent heteroatom-containing group between the carbon-carbon bonds of the aforementioned hydrocarbon group. R2and R3are each a hydrogen atom or a monovalent hydrocarbon group. One of Rf11and Rf1211 +is a monovalent radiation-sensitive onium cation.) (In formula (2), R4is a monovalent organic group that includes a cyclic structure and has 3-40 carbon atoms. Rf21and Rf2222 + is a monovalent radiation-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

90.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023018530
Publication Number 2023/228847
Status In Force
Filing Date 2023-05-18
Publication Date 2023-11-30
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abstract

Provided are: a radiation-sensitive resin composition with which it is possible to form a resist film that is capable of exhibiting sensitivity, LWR performance, water repellency, and development defect inhibitory ability at satisfactory levels; and a pattern formation method. A radiation-sensitive resin composition comprising an onium salt compound represented by formula (1), a first resin comprising structural units that have an acid-dissociable group, a second resin that has a higher fluorine content than the first resin and has an acid-dissociable group, and a solvent. (In formula (1), R1is a group comprising a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group comprising a divalent hetero atom-containing group between a carbon-carbon bond of said hydrocarbon group. Each of R2and R3is an independent hydrogen atom or a monovalent hydrocarbon group. When a plurality of R2s and a plurality of R3s exist, the plurality of R2s are the same as or different from each other and the plurality of R3s are the same as or different from each other. One of Rf11and Rf12is the fluorine atom and the other one thereof is the fluorine atom or a monovalent fluorinated hydrocarbon group. When a plurality of Rf11s and a plurality of Rf12s exist, the plurality of Rf11s are the same as or different from each other and the plurality of Rf1211 + is a monovalent radiation-sensitive onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

91.

RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RADIATION SENSITIVE ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2023006542
Publication Number 2023/223624
Status In Force
Filing Date 2023-02-22
Publication Date 2023-11-23
Owner JSR CORPORATION (Japan)
Inventor
  • Taniguchi,takuhiro
  • Nishikori,katsuaki
  • Kinoshita,natsuko
  • Kiriyama,kazuya

Abstract

The present invention provides a radiation sensitive resin composition, a pattern forming method, etc., capable of achieving, at sufficient levels, sensitivity, LWR performance, and process window when next-generation technology is applied. This radiation sensitive resin composition comprises a resin that includes a repeating unit A having an acid dissociable group, an onium salt that has an organic acid anion moiety and an onium cation moiety, and a solvent, wherein the onium salt includes at least one group selected from the group consisting of a pentafluorosulfanyl group, a pentafluorosulfanyloxy group, and a pentafluorosulfanylthio group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - Exposure; Apparatus therefor

92.

POLYOLEFIN RESIN FOAM PARTICLES, METHOD FOR PRODUCING SAME, AND MOLDED ARTICLE OF POLYOLEFIN RESIN FOAM PARTICLES

      
Application Number 18040853
Status Pending
Filing Date 2021-05-25
First Publication Date 2023-11-02
Owner JSP CORPORATION (Japan)
Inventor Yamasaki, Shobu

Abstract

A polyolefin-based resin expanded bead contains a base resin containing a polyolefin-based resin as a main component, carbon black, and a flame-retardant. A bulk density of the polyolefin-based resin expanded beads is 10 to 100 kg/m3. A blending amount of the carbon black is 0.5 to 10 parts by mass based on 100 parts by mass of the base resin. The flame-retardant contains a hindered amine-based compound represented by the following general formula (I), and a blending amount of the hindered amine-based compound is 0.01 to 1 parts by mass based on 100 parts by mass of the base resin. A polyolefin-based resin expanded bead contains a base resin containing a polyolefin-based resin as a main component, carbon black, and a flame-retardant. A bulk density of the polyolefin-based resin expanded beads is 10 to 100 kg/m3. A blending amount of the carbon black is 0.5 to 10 parts by mass based on 100 parts by mass of the base resin. The flame-retardant contains a hindered amine-based compound represented by the following general formula (I), and a blending amount of the hindered amine-based compound is 0.01 to 1 parts by mass based on 100 parts by mass of the base resin.

IPC Classes  ?

93.

PREPREG, METAL-CLAD LAMINATE, AND PRINTED WIRING BOARD

      
Application Number 18023760
Status Pending
Filing Date 2021-08-19
First Publication Date 2023-10-26
Owner JSR CORPORATION (Japan)
Inventor
  • Miyaki, Nobuyuki
  • Kawashima, Naoyuki
  • Yamashita, Yuutoku
  • Anabuki, Shouma
  • Nishino, Kenta
  • Kameyama, Takeru

Abstract

Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3). Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3).

IPC Classes  ?

  • H05K 1/03 - Use of materials for the substrate
  • B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
  • C08J 5/24 - Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
  • H05K 3/46 - Manufacturing multi-layer circuits

94.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18215863
Status Pending
Filing Date 2023-06-29
First Publication Date 2023-10-26
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5). A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/16 - Coating processes; Apparatus therefor
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • G03F 7/20 - Exposure; Apparatus therefor
  • G03F 7/38 - Treatment before imagewise removal, e.g. prebaking
  • G03F 7/32 - Liquid compositions therefor, e.g. developers
  • C07C 309/24 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a carbon skeleton containing six-membered aromatic rings
  • C07C 309/06 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/19 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
  • C07C 303/32 - Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
  • G03F 7/30 - Imagewise removal using liquid means

95.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2023002997
Publication Number 2023/203827
Status In Force
Filing Date 2023-01-31
Publication Date 2023-10-26
Owner JSR CORPORATION (Japan)
Inventor Maruyama,ken

Abstract

Provided are a radiation-sensitive resin composition and a pattern formation method by which sensitivity, critical dimension uniformity (CDU) performance, and development residue performance can be exhibited on a sufficient level when next-generation technology is applied. The radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit A having an acid-dissociable group, and a structural unit D having a phenolic hydroxy group; and a solvent. The structural unit D has a phenolic hydroxy group and an alkyl group on the same aromatic ring, and in the aromatic ring of the structural unit D, the alkyl group is bonded to a carbon atom adjacent to the carbon atom to which the phenolic hydroxy group is bonded. The radiation-sensitive resin composition further satisfies at least one condition selected from the group consisting of the following conditions 1 and 2. Condition 1: The resin is a radiation-sensitive acid-generating resin further including a structural unit B including an organic acid anion moiety, and an onium cation moiety including an aromatic ring structure having a fluorine atom. Condition 2: An onium salt (excluding the radiation-sensitive acid-generating resin) including an organic acid anion moiety and an onium cation including an aromatic ring structure having a fluorine atom is further provided.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - Exposure; Apparatus therefor

96.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION

      
Application Number JP2023014519
Publication Number 2023/204078
Status In Force
Filing Date 2023-04-10
Publication Date 2023-10-26
Owner JSR CORPORATION (Japan)
Inventor
  • Sakai,kazunori
  • Kasai,tatsuya
  • Furusawa,ayaka
  • Nii,akitaka

Abstract

Provided are a method for producing a semiconductor substrate and a silicon-containing composition which are capable of forming a silicon-containing film with good resist pattern collapse suppression properties and good film thickness uniformity. This method involves a step for directly or indirectly coating a substrate with a silicon-containing composition, a step for coating, with a resist film forming composition, the silicon-containing film formed in the silicon-containing composition coating step, an exposure step for irradiating, with radioactive rays, the resist film formed in the resist film forming composition coating step, and a step for at least developing the exposed resist film, wherein the silicon-containing composition contains a silicon-containing compound, a polymer having a structural unit represented by formula (1) below, and a solvent, and the content ratio of the silicon-containing compound accounting for components other than the solvent in the silicon-containing composition is 50%-99.9% by mass. (In formula (1), RA1represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. RA2 is a monovalent organic group having 1-20 carbon atoms.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

97.

SILICON-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number 18198954
Status Pending
Filing Date 2023-05-18
First Publication Date 2023-10-26
Owner JSR CORPORATION (Japan)
Inventor
  • Seko, Tomoaki
  • Anno, Yusuke
  • Nii, Akitaka
  • Nemoto, Ryuichi
  • Nishimura, Souta

Abstract

A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less. A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.

IPC Classes  ?

  • G03F 7/32 - Liquid compositions therefor, e.g. developers
  • C08L 83/04 - Polysiloxanes
  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/20 - Exposure; Apparatus therefor

98.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Application Number 18209751
Status Pending
Filing Date 2023-06-14
First Publication Date 2023-10-26
Owner JSR CORPORATION (Japan)
Inventor
  • Nosaka, Naoya
  • Ehara, Kengo
  • Nakatsu, Hiroki
  • Dobashi, Masato
  • Miyauchi, Hiroyuki

Abstract

A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2). A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/09 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/38 - Treatment before imagewise removal, e.g. prebaking
  • H01L 21/311 - Etching the insulating layers

99.

CONJUGATE AND PHOTOIMMUNOTHERAPY

      
Application Number 18044728
Status Pending
Filing Date 2021-09-07
First Publication Date 2023-10-19
Owner
  • JSR CORPORATION (Japan)
  • NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
Inventor
  • Sato, Kazuhide
  • Yukawa, Hiroshi
  • Matsuoka, Kohei
  • Ueya, Yuuichi
  • Shimada, Mibuko
  • Ono, Kenichiro

Abstract

Provided is a drug useful for photoimmunotherapy. Specifically, provided is a conjugate including an antibody molecule, a particle having an average particle diameter of 100 nm or less, and a photosensitive portion. In the conjugate, the particle having an average particle diameter of 100 nm or less is linked to the antibody molecule, and at least one of the antibody molecule or the particle is bound to the photosensitive portion. The photosensitive portion is a portion showing increase of hydrophobicity when irradiated with a light beam having a wavelength of from 500 nm to 900 nm or a portion containing a phthalocyanine skeleton.

IPC Classes  ?

  • A61K 47/68 - Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additives; Targeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates the non-active ingredient being a modifying agent the modifying agent being an antibody, an immunoglobulin or a fragment thereof, e.g. an Fc-fragment
  • A61K 41/00 - Medicinal preparations obtained by treating materials with wave energy or particle radiation
  • A61K 49/18 - Nuclear magnetic resonance (NMR) contrast preparations; Magnetic resonance imaging (MRI) contrast preparations characterised by a special physical form, e.g. emulsions, microcapsules, liposomes

100.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND

      
Application Number JP2023014339
Publication Number 2023/199851
Status In Force
Filing Date 2023-04-07
Publication Date 2023-10-19
Owner JSR CORPORATION (Japan)
Inventor
  • Naganawa,atsuko
  • Yamada,shuhei
  • Katagiri,takashi
  • Abe,shinya
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abstract

Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C07C 13/547 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with three condensed rings at least one ring not being six-membered, the other rings being at the most six-membered
  • C07C 33/36 - Polyhydroxylic alcohols containing six-membered aromatic rings and other rings
  • C07C 39/17 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings containing other rings in addition to the six-membered aromatic rings
  • C07C 39/23 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing six-membered aromatic rings and other rings, with unsaturation outside the aromatic rings
  • C07C 43/215 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
  • C07D 207/335 - Radicals substituted by nitrogen atoms not forming part of a nitro radical
  • C07D 209/14 - Radicals substituted by nitrogen atoms, not forming part of a nitro radical
  • C07D 333/18 - Radicals substituted by singly bound hetero atoms other than halogen by sulfur atoms
  • C07F 5/02 - Boron compounds
  • C07F 7/08 - Compounds having one or more C—Si linkages
  • C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
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