A semiconductor device that is equipped with a MOSFET with a Zener diode embedded and capable of achieving both improvement in the surge resistance and the low on-resistance of the MOSFET is provided. The semiconductor device equipped with a MOSFET with a Zener diode embedded includes an active region in which the MOSFET operates, and a peripheral region that is disposed outside of the active region and holds a withstand voltage of a chip peripheral portion, in which the active region includes a first region including a chip central portion and a second region disposed outside of the first region, and a withstand voltage of the first region is lower than a withstand voltage of the second region and a withstand voltage of the peripheral region.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
Provided is a compact and highly reliable power semiconductor device that prevents partial discharge originating from voids generated by the entering of water vapor from the exterior of the semiconductor device through a sealing resin or voids generated between a main terminal and the sealing resin when the main terminal is heated. The power semiconductor device comprises an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulation material for sealing the semiconductor element. The power semiconductor device further includes a plate-shaped terminal for electrically connecting the semiconductor element and an external equipment, and an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a hardness greater than that of the first insulating material.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Provided is a semiconductor module comprising a power semiconductor chip, a base, an insulating substrate bonded to the base, a semiconductor chip bonded to the insulating substrate, and a case adhered to the base by means of an adhesive. The semiconductor module has a low variability but a high assembly quality and reliability enabling a decrease in stress between the case and an adhered portion of the base. The base includes a plate-like first material, and a second material coating the first material and having a linear coefficient of expansion greater than that of the first material. The case covers at least part of a side surface of the base and is adhered to the base at least on an upper surface of the base by means of the adhesive, and a linear expansion coefficient of the case is larger than the linear expansion coefficient of the first material.
H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
Provided is a semiconductor device where an electric field applied to an electric field protection layer at a bottom of a trench gate electrode of an active region is relaxed and an avalanche withstand voltage is improved. The semiconductor device includes: an active region that has multiple gate trenches, a trench gate electrode in each gate trench, and a P body layer provided to a section other than the gate trenches; and a termination region disposed on the outer periphery of the active region. Additionally, an electric field protection layer is provided to the bottom of each gate trench of the active region, an electric field relaxation layer is between the active region and the termination region, the bottom surface of the electric field relaxation layer is shallower than that of the electric field protection layer, and the electric field relaxation layer is electrically connected to the P body layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
5.
ENERGIZATION INSPECTION APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ENERGIZATION METHOD
An electric connection inspection device includes: a cooling plate; an insulating plate provided on the cooling plate; a first measurement electrode provided on the insulating plate; and a second measurement electrode and a third measurement electrode provided above the first measurement electrode and located apart from the first measurement electrode. The insulating plate includes a variable thermal resistance mechanism. A semiconductor device can be installed between the first measurement electrode and the second measurement electrode and between the first measurement electrode and the third measurement electrode.
G01R 31/70 - Testing of connections between components and printed circuit boards
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
6.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device comprises: a diode element with a main surface having an electrode and a back surface having another electrode; a heat dissipation base arranged to face the diode element; a Cu lead arranged to face the diode element; a bonding material which bonds the back surface of the diode element and the heat dissipation base to each other; and a bonding material which bonds the main surface of the diode element and the Cu lead to each other. The bonding material provided on the back surface side of the diode element is a lead-free solder having a melting point higher than 260° C. and a thermal expansion coefficient lower than that of a Zn—Al solder; and the bonding material provided on the main surface side of the diode element contains a high-melting-point metal having a melting point higher than 260° C. and a compound of Sn and the high-melting-point metal.
Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on a main surface side of a drift layer of a first conductivity type is formed, irradiating ions from a second main surface side to a predetermined depth; a step for, after the ion irradiation, converting the ions into donors by anneal processing of heating at 300-450° C. for 60 seconds or less, thereby forming a field-stop layer; and a step for reducing the thickness of a semiconductor substrate to a predetermined value from the second main surface side such that a crystal defect having occurred in the ion irradiating step is eliminated.
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
8.
POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
The provided power semiconductor module is configured to reduce the wiring inductance and save space on the substrate by establishing a multi-parallel connection between multiple power semiconductor chips. It consists of a first and second insulated substrates with a plurality of semiconductor switching elements positioned on one and facing the other. There are also first and second spacer conductors positioned between the plurality of semiconductor switching elements and the second insulated substrate. Inter-spacer-conductor wiring parts are connected with the plurality of second spacer conductors. Each of the plurality of semiconductor switching elements has a first electrode connected to a conductor layer on the first substrate, a second electrode connected to a conductor on the second substrate via the first spacer conductors, and a control electrode connected to each other through the second spacer conductors and the inter-spacer-conductor wiring parts which are positioned a prescribed distance from the second conductor layer.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
In the present invention, in a FinFET having a channel forming region on a surface of a fin that is a semiconductor layer protruding on an upper surface of a substrate, a channel at a corner of the fin is prevented from becoming an ON state with a low voltage and a steep ON/OFF operation is made possible. As a means thereof, in a MOSFET that has a plurality of trenches, each of which have embedded therein a gate electrode, on an upper surface of an n-type epitaxial substrate provided with a drain region on a bottom surface and that has a channel region formed on a surface of a fin which is a protrusion part between the trenches adjacent to each other, a p-type body layer that constitutes a lateral surface of the fin, and a p+-type semiconductor region that constitutes a corner which is an end of the upper surface of the fin, are formed.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The semiconductor device configures a cascode-type high voltage element comprising a plurality of low voltage elements connected in series, wherein the number of stages of connected low voltage elements is reduced, and the high voltage element has desired withstand voltage, without limiting the withstand voltage of the gate oxide film of the low voltage elements. The semiconductor device comprises a first semiconductor element and one or more second semiconductor elements connected in series, wherein the first and the second semiconductor elements have a control signal output terminal between a source terminal and a drain terminal or between an emitter terminal and a collector terminal; and a gate terminal of the one or more second semiconductor elements is connected to the control signal output terminal of the first or second semiconductor element connected in series adjacently to the source or emitter side of said one or more second semiconductor elements.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/12 - Modifications for increasing the maximum permissible switched current
Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.
The upper arm drive circuit for controlling the drive of an upper arm switching element of the power conversion device includes: an upper arm gate voltage output wiring connected to a gate of the upper arm switching element; a first upper arm drive circuit reference potential wiring; an upper arm gate voltage reference potential wiring connected to an inverter output of the power conversion device; and a control circuit of upper arm drive circuit reference potential wiring potential for controlling the potential of the first upper arm drive circuit reference potential wiring to a potential lower than a reference potential when a potential of the inverter output is equal to a predefined potential that is lower than the reference potential or lower. The first upper arm drive circuit reference potential wiring is connected to the reference potential via the control circuit of upper arm drive circuit reference potential wiring potential.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
There is provided a power semiconductor module with multiple semiconductor chips arranged in parallel on an insulated substrate, allowing for high density mounting of semiconductor chips and highly reliable with less difference in operating characteristics from one semiconductor chip to another. The above module includes an insulated substrate; a first conductive pattern laid out on the insulated substrate; multiple power semiconductor chips arranged on the first conductive pattern; a first wiring formed to bridge and directly connecting respective gate electrodes of the power semiconductor chips; and a second wiring formed to bridge and directly connecting respective source electrodes of the power semiconductor chips, wherein the first wiring is placed alongside of the second wiring and may be angled within 30 degrees with respect to the second wiring.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/049 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
H01L 23/373 - Cooling facilitated by selection of materials for the device
A semiconductor device having a high cutoff resistance capable of suppressing local current/electric field concentration and current concentration at a chip termination portion due to an electric field variation between IGBT cells due to a shape variation and impurity variation during manufacturing. The semiconductor device is characterized by including an emitter electrode formed on a front surface of a semiconductor substrate via an interlayer insulating film, a collector electrode formed on a back surface of the semiconductor substrate, a first semiconductor layer of a first conductivity type in contact with the collector electrode, a second semiconductor layer of a second conductivity type, a central area cell, and an outer peripheral area cell located outside the central area cell.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
Provided is a highly reliable semiconductor device in which an influence on device characteristics can be reduced while improving a high temperature and high humidity bias resistance of a termination structure (termination region) of a chip by a relatively simple method. The semiconductor device includes an active region disposed on a main surface of a semiconductor substrate, and a termination region disposed on the main surface so as to surround the active region. The termination region includes an interlayer insulating film formed on the main surface of the semiconductor substrate, and an organic protective film formed so as to cover the interlayer insulating film. An insulating film having a thickness of 100 nm or less and containing nitrogen is provided between the interlayer insulating film and the organic protective film.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
16.
Upper arm drive circuit having a reverse current prevention circuit disposed between a power supply of a power conversion device and a first capacitor and control method thereof
The upper arm drive circuit for controlling drive of the upper arm switching element of the power conversion device includes: a capacitor disposed between a gate of the upper switching element and the output terminal of the power conversion device; a reverse current prevention circuit that is disposed between a power supply of the power conversion device and the capacitor, and that makes a current flow from a first terminal side of the reverse current prevention circuit connected to the power supply side to a second terminal side of the reverse current prevention circuit connected to the capacitor side and prevents a reverse current from flowing from the second terminal side to the first terminal side; and a switching element for capacitor charging that is turned ON in synchronization with a command signal that turns the upper arm switching element ON.
A termination structure in which a semiconductor active region is surrounded with a guard ring and capable of preventing corrosion of a metal layer connected to the guard ring includes: an active region and a guard ring region surrounding the active region. A guard ring is formed on the semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate so as to cover the guard ring. A field plate is disposed on the interlayer insulating film and is electrically connected to the guard ring via a contact penetrating the interlayer insulating film. A protective film covers the field plate, which has a laminated structure including a first metal in contact with the guard ring and a second metal which is disposed in contact with the first metal and has a lower standard potential than the first metal.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
18.
Gate drive device, gate drive method, power semiconductor module, and electric power conversion device
The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
19.
Semiconductor device signal transmission circuit for drive-control, method of controlling semiconductor device signal transmission circuit for drive-control, semiconductor device, power conversion device, and electric system for railway vehicle
To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.
H03K 17/16 - Modifications for eliminating interference voltages or currents
H02M 1/32 - Means for protecting converters other than by automatic disconnection
B60L 13/00 - Electric propulsion for monorail vehicles, suspension vehicles or rack railways; Magnetic suspension or levitation for vehicles
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
20.
Semiconductor device including a semiconductor element with a gate electrode on only one surface
Provided is a highly reliable semiconductor device capable of reducing stress generated in a semiconductor element even when a highly elastic joining material such as a Pb-free material is used in a power semiconductor having a double-sided mounting structure. The semiconductor device includes a semiconductor element including a gate electrode only on one surface, an upper electrode connected to the surface of the semiconductor element on which the gate electrode is provided, and a lower electrode connected to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided. A connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element.
A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.
To provide a semiconductor device in which an IGBT having two gate terminals is driven by one control signal, and a continuous ON state and an ON state twice for one on-pulse signal are avoided. A semiconductor device includes: a control signal input terminal; an IGBT having a first gate terminal and a second gate terminal; a delay unit configured to delay an input signal for a delay time; and a logical product unit configured to calculate a logical product of a first input terminal and a second input terminal. The control signal input terminal is connected to an input terminal of the delay unit and a second input terminal of the logical product unit. An output terminal of the delay unit is connected to the first gate terminal of the IGBT and a first input terminal of the logical product unit. An output terminal of the logical product unit is connected to the second gate terminal of the IGBT.
a is formed of a region R1 including a first corner, a region R2 including a second corner, and a region R3 interposed between the region R1 and the region R2. At this point, in a case of defining a minimum film thickness of a high electric field-resistant sealing member MR in the region R3 as t1 and defining a maximum film thickness of the high electric field-resistant sealing member MR in the region R1 as t2, a relation of t2≤1.5×t1 is satisfied.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 23/08 - Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
25.
Inverter device and electric motor device using same
The object of the invention is to provide an inverter device and an electric motor device using the same to shorten a dead time. Thus, an inverter device is provided, which includes: a switching element including a control terminal and a pair of main terminals; a control circuit configured to output a control signal which indicates whether to instruct an ON state of the switching element; a decision circuit configured to output a decision signal which indicates a state of the switching element based on a voltage between the main terminals of the switching element; and a drive circuit configured to control the ON state or an OFF state of the switching element based on the control signal and the decision signal.
H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
26.
Semiconductor device having a stacked electrode with an electroless nickel plating layer
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Provided is a semiconductor device in which, in a case where a metallic plate (a conductive member) is bonded by being sintered to a semiconductor chip having an IGBT gate structure, an excess stress is less likely to be generated in a gate wiring section of the semiconductor chip even when pressure is applied in a sinter bonding process, so that a characteristic failure is reduced. The semiconductor device according to the present invention is characterized by: being provided with a semiconductor chip having a gate structure represented by an IGBT; including first gate wiring and second gate wiring formed on the surface of the semiconductor chip; and including an emitter electrode disposed so as to cover the first gate wiring and a sintered layer disposed above the emitter electrode, wherein a multilayer structure formed by including at least the emitter electrode and the sintered layer on the surface of the semiconductor chip continuously exists over a range including an emitter electrode connecting contact and gate wiring regions.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 μm or more, and more favorably 1.5 μm or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as “a”, and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as “b”, the positional relationship a
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 23/24 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device
H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
B23K 35/36 - Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H03K 17/0814 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
H03K 17/74 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of diodes
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
An object of the present invention is to provide high-performance highly-reliable power semiconductor device.
The semiconductor device according to the present invention is provided with a first conductive type semiconductor substrate, a drain electrode formed on a back side of the semiconductor substrate, a drift layer of the first conductive type formed on a surface side of the semiconductor substrate, a source area of the first conductive type, a current diffused layer of the first conductive type, a body layer of a second conductive type reverse to the first conductive type in contact with the source area and the current diffused layer, a trench which pierces the source area, the body layer and the current diffused layer, which is shallower than the body layer, and the bottom of which is in contact with the body layer, a high-concentration JFET layer of the first conductive type formed up to a deeper position than a boundary between the current diffused layer and the body layer, electrically connecting the drift layer and the current diffused layer, and having higher impurity concentration than the drift layer, a gate insulating film formed on an inner wall of the trench, and a gate electrode formed on the gate insulating film.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
B60L 53/22 - Constructional details or arrangements of charging converters specially adapted for charging electric vehicles
An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
H03K 17/0814 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
H03K 17/16 - Modifications for eliminating interference voltages or currents
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
34.
Rectifier including MOSFET and hold circuit that boosts gate voltage of MOSFET, and alternator using the same
A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
H02H 7/06 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for synchronous capacitors
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02J 7/14 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from dynamo-electric generators driven at varying speed, e.g. on vehicle
H02K 11/04 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 7/217 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
35.
Semiconductor device, method for manufacturing the same, and power conversion system
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
H02M 7/5395 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate.
In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.
H01L 23/04 - Containers; Seals characterised by the shape
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H02M 7/537 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
38.
Semiconductor device, method for manufacturing same, and semiconductor module
In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.
H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H02K 11/04 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H02K 11/04 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
H01L 23/051 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
41.
Rectifier, alternator using same and power supply using same
The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.
H02M 1/36 - Means for starting or stopping converters
H02K 7/00 - Arrangements for handling mechanical energy structurally associated with dynamo-electric machines, e.g. structural association with mechanical driving motors or auxiliary dynamo-electric machines
H02K 11/04 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
H02M 7/217 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/30 - Modifications for providing a predetermined threshold before switching
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
42.
Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
43.
Semiconductor device, and alternator and power conversion device which use same
The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H02K 19/36 - Structural association of synchronous generators with auxiliary electric devices influencing the characteristic of the generator or controlling the generator, e.g. with impedances or switches
H02K 11/00 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02K 11/04 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/373 - Cooling facilitated by selection of materials for the device
H02M 7/217 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02P 9/00 - Arrangements for controlling electric generators for the purpose of obtaining a desired output
H01L 23/051 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/367 - Cooling facilitated by shape of device
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
44.
Rectification device, alternator, and power conversion device
A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02M 7/04 - Conversion of ac power input into dc power output without possibility of reversal by static converters
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/16 - Modifications for eliminating interference voltages or currents
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
45.
Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle
In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an area of a termination structure is provided. In order to solve the above-described problem, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second region provided to be closer to an outer peripheral side than the first region are provided in a junction termination portion, a first concentration gradient is provided in the first region, and a second concentration gradient larger than the first concentration gradient is provided in the second region.
H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
B60L 11/18 - using power supplied from primary cells, secondary cells, or fuel cells
H02M 7/537 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
46.
Semiconductor power module and power conversion apparatus using the same
A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module.
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H02H 7/122 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
47.
Silicon carbide semiconductor device and method for manufacturing same
A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
48.
Synchronous rectifier and alternator using the same
A rectifier (107) includes a rectifying MOSFET (101) that performs synchronous rectification, a control circuit (106) that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET (101) to determine an ON or OFF state of the rectifying MOSFET (101) based on the inputted voltage, and a capacitor (104) that supplies power to the control circuit (106). The control circuit (106) includes a blocking circuit (105) that inputs the voltage across the pair of main terminals of the rectifying MOSFET (101), to block power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is lower than the first voltage.
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
49.
Semiconductor device with similar impurity concentration JTE regions
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
50.
Silicon carbide semiconductor device and method for producing same
Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench formed into the drift through a p-type body layer 105 includes an n-type resistance relaxation layer 109 covering the bottom portion of the trench, and a p-type field relaxation layer 108. The p-type field relaxation layer 108 is separated from the trench bottom portion via the resistance relaxation layer 109, and is wider than the resistance relaxation layer 109. This achieves a low ON resistance, high reliability, and high voltage resistance at the same time. By forming the field relaxation layer beneath the trench, feedback capacitance can be controlled to achieve a high switching rate and high reliability.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
51.
Semiconductor switch circuit, signal processing apparatus, and ultrasound diagnostic apparatus
A semiconductor switch circuit comprises: a first switch pair including two MOSFETs having gates connected one another and sources connected to one another, and a zener diode reversely connected between the gates and sources of the MOSFETs; a second switch pair including two MOSFETs having gates connected one another and sources connected to one another, and a zener diode reversely connected between the gates and sources of the MOSFETs; and a third switch pair comprising two MOSFETs having gates connected to one another and sources connected to one another. The first switch pair and the second switch pair are connected in series between two input/output terminals through a connecting node. The third switch pair is connected to the connecting node between the first switch pair and the second switch pair.
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
52.
Semiconductor device and power conversion device using same
It is intended to provide a semiconductor device capable to improve a controllability of dv/dt by a gate drive circuit during a turn-on switching period, while maintaining a low loss and a high breakdown voltage. Trench gates are disposed so as to have narrow distance regions and wide distance regions, wherein each of the narrow distance regions is provided with a channel region, and each of the wide distance regions is provided with trenches, each trench having an electrode electrically connected to the emitter electrode. In this manner, even if a floating-p layer is removed, it is possible to reduce a feedback capacity and maintain a breakdown voltage.
A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.
In a semiconductor device where a metal circuit layer is disposed over a main planar surface of an insulating substrate, a semiconductor chip is connected by way of a solder over the metal circuit layer, and a metal wiring is connected over the metal circuit layer, in which a solder flow prevention area comprising a linear oxide material is formed between the semiconductor chip and the ultrasonic metal bonding region over the metal circuit layer.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/488 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/047 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 23/42 - Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
2 or more, an area of a Schottky interface at which a drift layer and a Schottky electrode are contacted can be sufficiently reduced by relatively increasing a ratio of p-type semiconductor region being a junction barrier region in an active region, and thereby deterioration in reverse voltage caused by defects existing in the drift layer is prevented.
The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
59.
Semiconductor devices and power conversion systems
A semiconductor device includes first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is formed near a surface of the first semiconductor layer; a first main electrode that is electrically connected to the second semiconductor layer; a third semiconductor layer of the second conductivity type that neighbors the first semiconductor layer; a fourth semiconductor layer of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer; a second main electrode that is electrically connected to the third semiconductor layer and the fourth semiconductor layer; a trench whose side face is in contact with the third semiconductor layer and the fourth semiconductor layer; a gate electrode that is formed along the side face of the trench by a sidewall of polysilicon; and a polysilicon electrode.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
60.
Semiconductor device and ultrasonic diagnostic apparatus using the same
The present invention provides a semiconductor device of a bi-directional analog switch having a high linearity and a low electric power loss. An ultrasonic diagnostic apparatus having a high degree of detection accuracy, comprising the semiconductor device, is also provided. A semiconductor device of a bi-directional analog switch, comprising a switch circuit capable of switching ON or OFF bi-directionally, and built-in driving circuits for the switch circuit, wherein the driving circuit is connected to first and second power supplies, and a first power supply voltage is higher than a maximum voltage of a signal applied to an input/output terminal of the switch circuit, a second power supply voltage is lower than a minimum voltage of a signal applied to an input/output terminal of the switch circuit, and the driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
In order to achieve reduction in loss, a semiconductor power module comprises DC terminals to be connected to a condenser module and the semiconductor power module is used in combination with a cooling jacket for cooling, and the DC terminals protrude toward the condenser module beyond the cooling jacket.
A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.
The synchronous motor driving apparatus including position sensors provided in the synchronous motor, a current polarity detection circuit for detecting the polarities of the currents in the respective phase windings of the synchronous motor, an inverter driving the synchronous motor, a motor speed calculation unit calculating the rotational speed of the synchronous motor depending on the output signals from the position sensors, a speed control unit outputting a first voltage adjusting component (q-axis current command value Iq*) to cause the rotational speed of the synchronous motor to approach a speed command value and a phase control unit outputting a second voltage adjusting component (d-axis current command value Id*) to cause the phase differences between the phases of the position sensor signals and of the currents in the respective phase windings of the synchronous motor to become a predetermined value.
H02P 27/04 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
66.
Control unit and control method for permanent magnet synchronous motor
If magnitude relations between the output terminal voltage based on a DC negative terminal of the inverter and a threshold voltage that is a fixed value are compared, polarity thereof is changed at a predetermined rotor phase. The magnitude relation, for example, is detected by an inexpensive and simple apparatus such as a level shift circuit and a NOT circuit. The rotor phase of the permanent magnet synchronous motor is inferred on the basis of changes in the magnitude relation and if it is differentiated, a rotation speed is inferred. If the inferred values of the rotor phase and rotation speed are fed back to synchronous operation or vector control, the free-running permanent magnet synchronous motor is restarted.
H02P 6/00 - Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
H02K 29/06 - Motors or generators having non-mechanical commutating devices, e.g. discharge tubes or semiconductor devices with position sensing devices
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
A semiconductor power module includes an insulated substrate with a plurality of power semiconductor devices mounted thereon and a heat sink for radiating heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the insulated substrate is bonded by metallic bonding to another surface of the base of the heat sink opposite the one surface of the base of the heat sink on which the radiation fins are formed.
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress can escape. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board serving as a current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and cracks of the cover plate.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
70.
Semiconductor device and power converter using the same
A synchronous motor including therein a three-phase inverter and position sensors, having a unit for calculating a digital input current value from the analog output of an input current detection circuit that detects the input current flowing into the DC input terminal of the three-phase inverter, and a digital feedback speed control unit for adjusting the amplitudes and frequency of the AC voltages outputted from the three-phase inverter in such a manner that the motor speed calculated by a motor speed calculation unit 41 on the basis of the outputs of the position sensors approaches a speed command value received by a communication reception unit from outside the synchronous motor. The synchronous motor further includes therein a communication transmission unit for transmitting the input current value and the motor speed to outside the synchronous motor.
H02P 3/18 - Arrangements for stopping or slowing electric motors, generators, or dynamo-electric converters for stopping or slowing an individual dynamo-electric motor or dynamo-electric converter for stopping or slowing an ac motor
A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step.
In a motor control apparatus, apparatus all switching devices of all phases of an inverter are kept fixed at OFF in accordance with a value of an all-OFF control pulse signal Poff outputted by a pulse generator. The pulse generator generates at least twice a pulse causing an induced voltage detection signal Pdet to change to an H level. A terminal voltage of a motor is inputted in accordance with the value of the induced voltage detection signal Pdet. Data of the sampling round in which amplitude of the induced voltage signal is great and the signal is not in saturation is selected from the data so inputted and a rotor position is estimated.
H02P 6/00 - Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
75.
Semiconductor device and electrical circuit device using thereof
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
In order to prevent a short circuit of top and bottom arms of a motor driving IC when noise is added to six control signals for controlling six switching elements, there is provided a semiconductor device for driving a motor, being sealed with resin as one package and comprising: six switching elements for driving a three-phase motor; three output terminals for outputting voltages to the three-phase motor; at least one driving circuit for driving the six switching elements; three control signal input terminals; and a function) of generating six control signals for control of the six switching elements based on three control signals inputted through the three control signal input terminals.
H02P 27/04 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
79.
Apparatus and method for driving synchronous motor
The synchronous motor driving apparatus including position sensors provided in the synchronous motor, a current polarity detection circuit for detecting the polarities of the currents in the respective phase windings of the synchronous motor, an inverter driving the synchronous motor, a motor speed calculation unit calculating the rotational speed of the synchronous motor depending on the output signals from the position sensors, a speed control unit outputting a first voltage adjusting component (q-axis current command value Iq*) to cause the rotational speed of the synchronous motor to approach a speed command value and a phase control unit outputting a second voltage adjusting component (d-axis current command value Id*) to cause the phase differences between the phases of the position sensor signals and of the currents in the respective phase windings of the synchronous motor to become a predetermined value.
H02P 1/46 - Arrangements for starting electric motors or dynamo-electric converters for starting dynamo-electric motors or dynamo-electric converters for starting an individual synchronous motor
80.
Vector controller for a permanent magnet motor and inverter module
In a system in which current is detected in an inexpensive manner or in a system in which a position detector is omitted, the present invention provides a high-efficiency vector controller for a permanent magnet motor that can minimize current at the same torque even when there is setting error (R−R*) in resistance. Even when a current value commanded for the d-axis is set to zero, a virtual inductance value calculated from a detected q-axis current value is used for output voltage value calculation and phase error estimation calculation; so even if there is setting error (R−R*) in resistance, current can be minimized at the same torque and thereby the present invention can provide a high-efficiency vector controller for a permanent magnet motor.
H02P 27/04 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
81.
Power semiconductor module and fabrication method thereof
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate.
A motor driving semiconductor device has: six switching elements for driving a three-phase motor; three output terminals for applying output voltages to three terminals of coils of the three-phase motor; drive circuits for driving the six switching elements; and six control signal input terminals for receiving six control signals for on/off control of the six switching elements, wherein the motor driving semiconductor device is formed by sealing at least one semiconductor chip in one package with resin, and further includes a dead time generation function of generating a dead time relative to the six control signals.
H02P 27/04 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
83.
Semiconductor power module including epoxy resin coating
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
H01L 23/22 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device liquid at the normal operating temperature of the device
H01L 23/24 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device
84.
Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof
A dielectrically isolated semiconductor device of high reliability is provided by realizing a fine and deep element isolating region which can prevent dislocation of an oxide film as an insulation layer by oxidation-induced stress. The dielectrically isolated semiconductor device includes an SOI substrate supporting an active element layer deeper than an expanded distance of a depletion layer subjected to the highest voltage applied to the device, and an element isolating region which encloses the active element layer. The element isolating region contains a deep trench which comes into contact with the insulation layer, and which is filled with n heavily doped layers on both side walls, second insulation films each adjacent to the n heavily doped layer and a polycrystalline semiconductor layer formed between the second insulation films.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A driving apparatus of a synchronous motor fixes all the switching devices of an inverter at OFF in accordance with a value of an all-OFF control pulse signal outputted by a pulse generator. A motor current keeps flowing through free wheel diodes for a predetermined period even after all the switching devices shift to the OFF state. Therefore, pulse generator changes an induced voltage detection signal to an H (high) level after the passage of the time in which a motor current drops down to zero. A terminal voltage of the motor is taken in to acquire an induced voltage and a rotor position is estimated.
H02P 1/46 - Arrangements for starting electric motors or dynamo-electric converters for starting dynamo-electric motors or dynamo-electric converters for starting an individual synchronous motor
86.
Motor controller, washing machine, air conditioner and electric oil pump
A motor controller capable of suppressing a large speed change generated at the time of changeover from a synchronous operation mode to a position feedback operation mode and implementing even acceleration characteristics regardless of the load torque by estimating a torque of a permanent magnet motor in the synchronous operation mode for driving the permanent magnet motor and setting an initial value of a current command value in a position sensor-less operation mode on the basis of information of the torque estimated value.
A vector control system for a permanent magnet synchronous motor, using a current control equivalent output value, a frequency instruction value, a current detection value, an inference phase error value, and a motor constant, identifies a motor resistance equivalent or a resistance setting error equivalent. Next, the vector control unit, using the identified value, corrects a set value R* equivalent of a voltage instruction calculation unit and a n inference phase error calculation unit.
Thereby, a vector control system for a permanent magnet synchronous motor can realize a robust control characteristic for changing of a resistance constant of a motor in a low rotation speed area under position sensor-less control. Further, a vector control system for a permanent magnet synchronous motor can be applied in common in a system performing inexpensive current detection.
A control apparatus and a semiconductor apparatus of AC motors capable of reducing torque ripple with a comparatively simple circuit corresponding to a high withstand voltage and capable of driving a motor at high efficiency even when the rotational speed or load has changed. The control apparatus detects first phase signals fixed in relative phase to induced voltages of the motor and current polarity signals, recognizes phase differences between them, generates second phase signals so as to make the phase differences approach zero to drive the motor at high efficiency, generates modulation wave signals having quasi-sinusoidal waveforms or trapezoidal waveforms on the basis of the second phase signals, compares the modulation wave signals with a carrier wave signal, and conducts PWM control on an inverter.
patents
