The present invention achieves a light-emitting device that emits light with a good polarization ratio. Provided is a light-emitting device comprising: a first sub-mount which has a ceramic substrate that contains AlN and a plurality of upper metal layers that are provided to the upper surface side of the ceramic substrate; and a first semiconductor laser element which is disposed on an upper surface of the first sub-mount and which oscillates with a TM mode, wherein the plurality of upper metal layers include one or more upper first metal layers which have a metal layer including at least Ni.
Provided is a light-emitting device that can reduce glare and has excellent durability, a headlight, and a vehicle equipped with the same. The light-emitting device comprises: a light-emitting element having an emission peak wavelength in the range of 400- 490 nm; and a wavelength conversion member that has a first phosphor having an emission peak wavelength in the range of 480 nm to less than 580 nm, and a second phosphor having an emission peak wavelength in the range of 580-680 nm and having a composition different from that of the first phosphor. The light emitting device emits light having a first luminance ratio Ls/L of 0.9 or less, said first luminance ratio Ls/L being a ratio of the first effective radiation luminance Ls of the light emitted from the light-emitting device in consideration of the spectral sensitivity of the human S-cone and the human photopic standard luminous efficiency curve defined by CIE, with respect to the luminance L of the light emitted from the light-emitting device in consideration of the human photopic standard luminous efficiency curve. The first phosphor includes a rare earth aluminate phosphor having a composition represented by formula (1A).
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
F21W 102/00 - Exterior vehicle lighting devices for illuminating purposes
F21Y 115/00 - Light-generating elements of semiconductor light sources
This light source device comprises: one or more first light source parts, one or more second light source parts, and a light-shielding member disposed between the first light source parts and the second light source parts. The first light source parts each have two or more first laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. The second light source parts each have one or more second laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. In the first light source part, the two or more first laminated bodies are continuously laminated in the first direction. The number of first laminated bodies included in the first light source part is smaller than the number of second laminated bodies included in the second light source part.
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
G03B 15/05 - Combinations of cameras with electronic flash apparatus; Electronic flash units
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
The present disclosure provides a light emitting device comprising a cover member having higher heat resistance, and a method for manufacturing the light emitting device. This light emitting device 1 comprises: a light emitting element 10 provided with a semiconductor structure 11 having a light emitting surface 11a, an electrode forming surface 11b positioned on the side opposite to the light emitting surface 11a, and a side surface 11c positioned between the light emitting surface 11a and the electrode forming surface 11b, and a first electrode 12 that is disposed on the electrode forming surface 11b and that has a first surface 12a facing the electrode forming surface 11b, a second surface 12b positioned on the side opposite to the first surface 12a, and a side surface 12c positioned between the first surface 12a and the second surface 12b; and a light reflective member 20 covering the light emitting element 10 except for the light emitting surface 11a and the second surface 12b, wherein the light reflective member 20 includes a light reflective inorganic member 21 covering at least the side surface 11c of the semiconductor structure 11, and a light reflective resin member 22 covering the side surface 12c of the first electrode 12 and the light reflective inorganic member 21.
A light emitting device according to the present invention includes: a base having a mounting surface; a plurality of semiconductor laser elements each emitting a laser beam in a first direction and arranged on the mounting surface along a second direction intersecting the first direction; a plurality of first mirror members each having a first reflecting surface that reflects the laser beam emitted from the corresponding semiconductor laser element and changing the traveling direction of the laser beam in a direction away from the mounting surface; a cover body that transmits the laser beams reflected by the first reflecting surfaces; and one or more second mirror members arranged on the cover body, having second reflecting surfaces that reflect the laser beams transmitted through the cover body, and further changing the traveling direction of the laser beams. The plurality of first mirror members are arranged on the mounting surface such that positions of the first reflecting surfaces in the first direction are different from one another. With the mounting surface serving as a reference surface, the heights of the optical axes of the laser beams reflected by the second reflecting surfaces from the reference surface are different from one another.
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
7.
CERAMIC SINTERED BODY SUBSTRATE, LIGHT-EMITTING DEVICE, AND METHODS FOR MANUFACTURING THESE
Provided is a method for manufacturing a ceramic sintered body substrate, the method including: preparing a ceramic substrate 1 in which a through-hole 2 is formed before firing (S11); disposing a first metal paste 3 in the through-hole (S12); and firing the ceramic substrate in which the first metal paste is disposed (S14). In the process for disposing the first metal paste, the first metal paste includes a plurality of first metal powders (4) and a plurality of active metal powders (50). The first metal powders include a metal powder (4a) that serves as a core, and a coating metal member (40b) that covers at least part of the metal powder, the coating metal member (40b) having a melting point lower than that of the metal powder. In the process for firing the ceramic substrate, the firing temperature is equal to or greater than 700°C and is less than the melting point of the metal powder.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
Provided is a light-emitting module capable of controlling a region that is partially irradiated with light within a region to be irradiated. This light-emitting module comprises: a light source that is provided with a plurality of light-emitting units each including a light-emitting surface; a first lens that transmits light from the plurality of light-emitting units; a drive unit that varies the relative inclination between the optical axis of the first lens and the light-emitting surfaces; and a control unit capable of controlling light emission of each of the plurality of light-emitting units and the operation of the drive unit. The light-emitting surfaces of the light-emitting units adjacent to each other are disposed with a predetermined space therebetween when viewed from above, a region to be irradiated is irradiated with the light transmitted through the first lens, and the control unit is capable of controlling the operation of the drive unit so as to compensate for the illuminance of a region corresponding to the predetermined space within the region to be irradiated in a predetermined period.
F21V 5/04 - Refractors for light sources of lens shape
F21V 17/00 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
F21V 17/02 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages with provision for adjustment
Provided is a light-emitting module capable of radiating light that is adjusted to a prescribed color. The light-emitting module comprises: a light source that includes a plurality of light emitting units which include a first light emitting unit that emits light having a first chromaticity and a second light emitting unit that emits light having a second chromaticity different from the first chromaticity, and each of which has a light emitting surface; a lens that transmits the light from the light source; a drive unit that can change the relative positions of the light source and the lens in a direction crossing the optical axis of the lens and/or the relative inclinations of the light emitting surfaces and the optical axis of the lens; and a control unit that is capable of controlling light emission of each of the plurality of light emitting units and operation of the drive unit, wherein the control unit performs control so as to cause the plurality of light emitting units to emit light during the operation for changing the relative positions and/or the relative inclinations by the drive unit, and so as to overlap, in an irradiated region, the positions of at least a portion of the light from the first light emitting unit that has passed through the lens prior to the operation and at least a portion of the light from the second light emitting unit that has passed through the lens after the operation.
H05B 45/34 - Voltage stabilisation; Maintaining constant voltage
H05B 45/345 - Current stabilisation; Maintaining constant current
H05B 47/155 - Coordinated control of two or more light sources
H05B 47/16 - Controlling the light source by timing means
F21Y 105/12 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
F21Y 113/10 - Combination of light sources of different colours
α-FE-CONTAINING RARE EARTH ELEMENT-IRON-NITROGEN MAGNETIC POWDER, MANUFACTURING METHOD FOR SAME, MAGNETIC MATERIAL FOR MAGNETIC FIELD AMPLIFICATION, AND MAGNETIC MATERIAL FOR ULTRA-HIGH FREQUENCY ABSORPTION
Provided is a magnetic powder excellent in high frequency characteristics with low iron loss and excellent efficiency even when a high frequency is applied. The present invention relates to an α-Fe-containing rare earth element-iron-nitrogen magnetic powder comprising: a core region including a rare earth element R (where R is at least one type selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm and if Sm is included, Sm is less than 50 atom% with respect to the R component as a whole), Fe, and N; and, on the outside of the core region, an α-Fe-containing region including α-Fe and at least one type selected from the group consisting of an oxide, a nitride, and an oxynitride of the rare earth element R.
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/24 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated
H01F 1/26 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated by macromolecular organic substances
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
This light emitting device 1000A comprises: a base 100; at least one first light emitting element 51 that is disposed on the base and emits light from an upper surface and a side surface thereof; a reflective member 153 disposed around the at least one first light emitting element 51; and a lens 73 that overlaps the at least one first light emitting element 51 in a top view, wherein the shape of the lens 73 in the top view is an elliptical shape having a major axis LA3 in an x direction and a minor axis SA3 in a y direction orthogonal to the x direction, and when seen from above, in the reflective member 153 overlapping the lens 73, has a surface area of a section of the reflective member present on the -y direction side of the major axis LA3 is greater than a surface area of a section of the reflective member present on the +y direction side of the major axis LA3.
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
G09F 9/40 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character is selected from a number of characters arranged one beside the other, e.g. on a common carrier plate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
This light-emitting module comprises: a support substrate having a plurality of placement surfaces arranged side by side in a first direction; a plurality of light-emitting devices, the corresponding light-emitting devices being disposed on the respective placement surfaces, and each including a semiconductor laser element, a first mirror member, a cover, and a second mirror member; a plurality of third mirror members; and a light condensing lens. The first mirror member changes the traveling direction of laser light emitted from the semiconductor laser element, the cover transmits the laser light having the changed traveling direction, the second mirror member further changes the traveling direction of the laser light transmitted through the cover to a second direction, and each third mirror member changes the traveling direction of the laser light from the second direction to the first direction. The light condensing lens couples a plurality of laser light beams to optical fibers.
Provided are a wavelength conversion member with which it is possible to suppress a decrease in wavelength conversion efficiency, and a wavelength conversion member manufacturing method. The wavelength conversion member comprises a layered body which includes: a first barrier layer having a first main surface, a second main surface positioned opposite the first main surface, and an end surface connected to the first main surface; a wavelength conversion layer that has a third main surface and a fourth main surface positioned opposite the third main surface, and which is disposed on the first barrier layer with the third main surface and the second main surface of the first barrier layer facing each other, the wavelength conversion layer including quantum dots; and a second barrier layer that includes a fifth main surface and a sixth main surface positioned opposite the fifth main surface, and which is disposed on the wavelength conversion layer with the fifth main surface and the fourth main surface of the wavelength conversion layer facing each other. The wavelength conversion layer is positioned on the inside of the end surface in one cross section intersecting the third main surface and taken through the end surface, and has a first side surface connecting the third main surface and the fourth main surface. The first side surface is coated with a coating film.
POSITIVE-ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERIES, METHOD FOR MANUFACTURING SAME, POSITIVE ELECTRODE FOR SECONDARY BATTERIES USING SAME, AND SECONDARY BATTERY
Provided is a method for manufacturing a positive-electrode active material for secondary batteries, said method being capable of configuring a battery with improved battery resistance. This method for manufacturing a positive-electrode active material for secondary batteries comprises: preparing lithium transition metal composite powder that has a layered structure, in which the ratio of the molar number of nickel atoms with respect to the total molar number of metal atoms other than lithium is 0.5 inclusive to 1 exclusive, and in which the ratio of the molar number of cobalt atoms with respect to the total molar number of metal atoms other than lithium is 0 inclusive to 0.5 exclusive; obtaining a cobalt-adhered complex oxide by bringing the lithium transition metal composite powder into contact with a cobalt raw material; obtaining a first heat-treated object by subjecting the cobalt-adhered complex oxide to first heat treatment at a temperature from 600°C to 800°C exclusive; obtaining a niobium-adhered complex oxide by bringing the first heat-treated object into contact with a niobium raw material; and obtaining a second heat-treated object by subjecting the niobium-adhered complex oxide to second heat treatment at a temperature from 300°C to 500°C exclusive.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
This light source unit comprises a display device capable of displaying an image, a first prism sheet on which light emitted from the display device is incident, and an image formation optical system. The image formation optical system includes an input element on which light emitted from the first prism sheet is incident and an output element on which light that has gone through the input element is incident, and light emitted from the output element forms a first image corresponding to the image. The image formation optical system has an approximately telecentric property on the first image side. The light emitted from the display device has an approximately Lambertian light distribution.
This light source unit comprises: a first display device; a second display device; a first polarizing plate which causes light emitted from the first display device to be first polarized light having a first polarization direction; a second polarizing plate which causes light emitted from the second display device to be second polarized light having a second polarization direction; a reflection-type polarizing plate which allows the first polarized light to transmit therethrough and reflects the second polarized light; a first reflection member; a first wave plate disposed between the reflection-type polarizing plate and the first reflection member; a second reflection member; and a second wave plate disposed between the reflection-type polarizing plate and the second reflection member. A first optical path length from the first display device to the first reflection member for the light emitted from the first display device is longer than a second optical path length from the second display device to the second reflection member for the light emitted from the second display device, and the curvature of a first concave surface is greater than the curvature of a second concave surface.
This video display system comprises a light source unit and a drive unit. The light source unit has a display device and an image forming optical system. The display device is capable of displaying an image. In the image forming optical system, a first picture that corresponds to the aforementioned image is projected on a projection part, and a picture that is visually recognizable to a viewer is thereby displayed on a far side of the projection part as viewed from the viewer. The drive unit changes the position of the first picture by controlling the position and/or orientation of the light source unit on the basis of a state signal inputted from outside.
The present invention provides a light-emitting device that can suppress a reduction in luminous flux, and a manufacturing method therefor. A light-emitting device (100) comprises: a light-emitting element (1) which has a first surface that is a light extraction surface, a second surface that is on the opposite side from the first surface, and a side surface that connects the first surface and the second surface, and which has an element electrode on the second surface; a substrate (20) which has wiring that is electrically connected to the element electrode; a translucent member (5) which is disposed on the first surface of the light-emitting element and through which light from the light-emitting element passes; an inorganic member (11) which, on the substrate, is disposed on the side surface of the light-emitting element or laterally to the light-emitting element, and on the side surface of the translucent member; and a light-reflecting member (12) which makes contact with at least part of the inorganic member. The inorganic member has a plurality of gaps (11a). At least part of the light-reflecting member is impregnated in at least some of the plurality of gaps of the inorganic member.
A light source unit according to the present invention comprises: a display device that has a plurality of pixels and can display an image; a color-changing sheet on which light emitted from the display device is incident; an image-forming optical system; and a driving unit that changes the positional relationship between the display device and the color-changing sheet. The image-forming optical system forms a first image corresponding to the aforementioned image. The color-changing sheet comprises: a first region on which light from the image is incident and which emits light of a first color; and a second region on which light from the image is incident and which emits light of a second color. The driving unit changes the positional relationship between the display device and the color-changing sheet between a first positional relationship, in which light emitted from one of the pixels is incident on the first region, and a second positional relationship, in which light emitted from the one pixel is incident on the second region.
The purpose of the present invention is to provide: a light emitting element from which light is able to be more efficiently extracted; and a light emitting device. The present invention provides a light emitting element which comprises: a substrate; a semiconductor structure which is arranged on the substrate and sequentially comprises, from the substrate side, an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a p-electrode which is arranged on the p-side semiconductor layer and is electrically connected to the p-side semiconductor layer; and an n-electrode which is arranged on the n-side semiconductor layer and is electrically connected to the n-side semiconductor layer. With respect to this light emitting element, the n-electrode comprises a base part and a plurality of extension parts that extend from the base part; the substrate comprises an exposure part that is exposed from the semiconductor structure; the exposure part comprises a first exposure part which is positioned between two extension parts that are adjacent to each other in a top view, and a second exposure part which is arranged on the outer peripheral part of the substrate, while being connected with the first exposure part; and the p-electrode is arranged between the extension parts and the first exposure part in a top view.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/56 - Materials, e.g. epoxy or silicone resin
21.
CARBON MATERIAL FOR LITHIUM SULFUR BATTERY AND PRODUCTION METHOD THEREFOR
Provided is a method for producing a carbon material which is for a lithium sulfur battery and with which a battery with improved charge and discharge capacity can be configured. This method for producing a carbon material for a lithium sulfur battery comprises: obtaining a slurry by subjecting a mixture containing a first carbon material, a dispersant, and a liquid medium to a wet-type crushing treatment; obtaining a second carbon material by removing at least a part of the liquid medium from the slurry; obtaining a third carbon material by subjecting the second carbon material to a heat treatment; and obtaining a fourth carbon material by subjecting the third carbon material to an activation treatment.
Provided are a light-emitting device, a spectroscope, and a method for producing a light-emitting member. The light-emitting device comprises: a light-emitting member including a light-emitting element for emitting first light, a light-emitting material that is arranged on the light exit side of the light-emitting element, absorbs the first light, and consequently emits second light having a light emission peak wavelength of 800-1100 nm, and a resin; and an optical thin film that is arranged on the light exit side of the light-emitting member, reflects the first light, and transmits the second light. In the light emission spectrum of the light-emitting device, a first integral value ratio Ib/Ia of the integral value Ia of light emission intensities of 200 nm or more and less than 550 nm and the integral value Ib of light emission intensities of 550-600 nm is 0-0.05 and a second integral value ratio Ic/Ia of the integral value Ia and the integral value Ic of light emission intensities of 800-1100 nm is 0.75-30.
Provided is a light-emitting apparatus and an illumination apparatus. This light-emitting apparatus comprises: a light-emitting element having an emission peak wavelength of 430 nm to 470 nm; and a fluorescent member containing a first fluorescent body having an emission peak wavelength of at least 510 nm to 590 nm exclusive, and a second fluorescent body having an emission peak wavelength of 590 nm to 670 nm and including a first fluoride fluorescent body having a composition included in the compositional formula represented by formula (1). The light-emitting apparatus satisfies condition (A) or (B). Formula (1): A1cc[M11-aabb] (In formula (1), A1includes K; M1includes Si and Al; a and b satisfy 0 < a < 0.2 and 5 < b < 7, and c is the absolute value of the electric charge of [M11-aabb] ions.) Condition (A): General color rendering index Ra is in the range from 80 to 90 and color rendering index R9 is 50 to 90. Condition (B): General color rendering index Ra is in the range from 80 to 87 and color rendering index R9 is 50 or more.
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
F21V 3/08 - Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material comprising photoluminescent substances
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
24.
LIGHT-EMITTING MODULE, IMAGING DEVICE, AND IRRADIATION METHOD FOR LIGHT-EMITTING MODULE
Provided are an imaging device, an irradiation method for a light-emitting module, and a light-emitting module excellent in spatial resolution of irradiation light. This light-emitting module comprises: a light source comprising a plurality of light-emitting elements; a control unit that is capable of individually turning on each among the plurality of light-emitting elements; a lens that transmits light from the plurality of light-emitting elements; and a drive part that is capable of relatively rotate the lens and the light source such that the optical axis of the lens or the the center axis of the light source moves on a first trajectory in a top view. After having penetrated the lens, the light from the light-emitting elements is irradiated such that the main light beam of said light moves on a second trajectory corresponding to a first trajectory, and, when the main light beam of the light moving around the second trajectory one time is defined as one cycle, the control unit is capable of changing the brightness of the light from the light-emitting elements during a plurality of divided periods into which one cycle is divided.
G03B 15/05 - Combinations of cameras with electronic flash apparatus; Electronic flash units
H05B 45/10 - Controlling the intensity of the light
H05B 47/16 - Controlling the light source by timing means
F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
A light-emitting module according to an embodiment comprises: a substrate that includes a support member having a first surface, and a wiring layer provided on the first surface; a plurality of light-emitting elements that are provided on the first surface and electrically connected to the wiring layer; a plurality of light-adjusting members that are respectively provided away from the plurality of light-emitting elements on the upper surface side of the plurality of light-emitting elements; at least one light-blocking member that is provided on the first surface, when viewed in plan view, provided so as to surround a first light-emitting element among the plurality of light-emitting elements and surround a first light-adjusting member among the plurality of light-adjusting members, and when viewed in cross section, provided between the first light-emitting element and a second light-emitting element among the plurality of light-emitting elements; and a light-transmitting member that covers the first surface, the wiring layer, the plurality of light-emitting elements, the plurality of light-adjusting members, and the light-blocking member.
Provided is a light emission module that provides a high degree of freedom in changing the color of light. This light emission module comprises: a plurality of light-emitting units; an optical member that includes at least one first region from which light having a first chromaticity can be extracted and at least one second region from which light having a second chromaticity different from the first chromaticity can be extracted, and allows light emitted from the light-emitting units 1 to transmit or pass therethrough; a variable mechanism for changing the distance between the optical member and the light-emitting units; and a first lens into which the light having transmitted or passed through the optical member enters. At least one of the first and second regions is provided so as to be paired with the light-emitting units. The variable mechanism changes the distance between the optical member and the light-emitting units in a direction along the center axis of the first lens.
The present invention enables realization of appropriate driving when configuring a light emitting device, such as a display, using multicolor-light-emitting type semiconductor light emitting elements. A light emitting device (100) comprises: a plurality of light emitting elements (11) that are capable of emitting light in various luminescent colors in accordance with a driving current; a display unit (10) on which the plurality of light emitting elements (11) are arranged; a drive unit (30) for supplying a driving current to the plurality of light emitting elements (11); a lighting control unit (50) for controlling the drive unit (30) so as to cause each of the light emitting elements (11) to emit light in a prescribed luminescent color and at a prescribed light emitting luminance; and an information retaining unit (70) for retaining current-chromaticity information for determining a driving current value for driving each of the light emitting elements (11) in accordance with the luminescent color in which the light emitting element (11) emits light. The lighting control unit (50) is configured: to determine, by referring to the current-chromaticity information retained by the information retaining unit (70) in accordance with a prescribed luminescent color and gradation information for each of the light emitting elements (11), a driving current value for driving the light emitting element (11) and an ON period for lighting the light emitting element; and to drive, by a driving current from the drive unit (30), the light emitting element (11) to light up.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
This light source module comprises: a first light-emitting part; a light guide member; a light reflection member; a light branch member; and a retroreflection member. The light guide member has a linear part and a bent part. The linear part and the bent part have a first surface for outputting light emitted from the first light-emitting part in a first direction and a second surface positioned on a side opposite to the first surface. The linear part extends in a second direction orthogonal to the first direction, and the bent part bends from the second direction toward the first direction. In the linear part and the bent part, the light reflection member is disposed closer to the second surface than to the first surface. The light branch member has a third surface, and the retroreflection member has a fourth surface. The third surface reflects a portion of the light outputted from the first surface to the fourth surface.
This light-emitting device comprises a substrate that has an upper surface, a light-transmissive member that has a lower surface that faces the upper surface of the substrate, a plurality of surface emission–type laser elements that are disposed between the upper surface of the substrate and the lower surface of the light-transmissive member and that are capable of upper-surface light emission, and a wiring relay member that is disposed between the upper surface of the substrate and the lower surface of the light-transmissive member. The substrate has first wiring and second wiring. The light-transmissive member has third wiring that is electrically connected to the first wiring via the wiring relay member. The plurality of surface emission–type laser elements include first laser elements that are electrically connected to the third wiring, and second laser elements that are electrically connected to the second wiring.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
30.
WAVELENGTH CONVERSION MEMBER AND MANUFACTURING METHOD THEREFOR
The present invention provides a wavelength conversion member that suppresses discoloration from the end portion thereof. The wavelength conversion member includes a laminate comprising a wavelength conversion layer containing quantum dots and two barrier layers laminated on one principal surface and the other principal surface of the wavelength conversion layer, respectively. In the wavelength conversion member, the barrier layers have a first modification part at least on a portion of the end surfaces thereof, the wavelength conversion layer has a second modification part at least on a portion of the end surface thereof, and at least a portion of the second modification part is exposed together with the barrier layers on the end surface of the laminate.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
Provided is a light-emitting device that emits amber light and that has good temperature characteristics. This light-emitting device comprises: a light-emitting element having an emission peak wavelength between 380 nm and 470 nm; and a wavelength conversion member including a fluorescent body that emits light by absorbing at least a portion of the light from the light-emitting element. The fluorescent body includes: a first fluorescent body that has an emission peak wavelength between 535 nm and 560 nm and a half-value width of 100 nm to 120 nm and that contains a nitride comprising La, Ce, and Si; and a second fluorescent body that has an emission peak wavelength between 605 nm and 620 nm and a half-value width of 70 nm to 80 nm and that contains a nitride comprising Eu, Si, Al and at least one of Ca and Sr. The light-emitting device emits light that is in the region defined by joining (0.545, 0.425), (0.560, 0.440), (0.609. 0.390), and (0.597, 0.390) in the xy chromaticity coordinate system of a CIE1931 chromaticity diagram.
This laser welding method comprises: a first step for forming a first welded part in which a metal member and a metal foil contained in a layered body are welded by laser light irradiation; and a second step for irradiating laser light onto a region that includes a portion adjacent to a portion connecting the first welded part and the metal foil, or onto a region that includes a portion adjacent to the space between the first welded part and the metal foil. In the second step, the first welded part may be joined to a metal foil that is separated by a space from the first welded part, and a region that includes the first welded part and adjacent portions on both sides enclosing this first welded part may be irradiated with laser light in a spot that is wider than the width or the diameter of the first welded part.
B23K 26/32 - Bonding taking account of the properties of the material involved
H01M 10/04 - Construction or manufacture in general
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
This laser welding method comprises, e.g., a first step for forming a first welded section in which at least a plurality of metal foils included in a laminate are welded through irradiation with laser light, and a second step for welding the laminate and a metal member by irradiating a site that at least partially includes the first welded section of the laminate with laser light. Additionally, this metal joined body comprises, e.g.: a metal member; a laminate of metal foils that is disposed on the metal member; and a welding unit having a through-hole section passing through the laminate in the lamination direction of the metal foils, and a protruding section protruding from the through-hole section into the metal member, the welding part welding together the laminate and the metal member. Either the smallest width of the region where the through-hole section is formed is greater than the largest width of the protruding section, or the smallest diameter of the region where the through-hole section is formed is greater than the largest diameter of the protruding section.
Provided is a wavelength conversion module having high reliability. A wavelength conversion module 100 comprises phosphor member 11 and a transmissive substrate 12 which is directly bonded to the phosphor member 11, has a heat conductivity higher than that of the phosphor member 11, and has a thickness of 100-600 μm.
C04B 35/50 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds
C09K 11/80 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals containing aluminium or gallium
This lighting module comprises a board, a light source disposed on the board, a first lens upon which light emitted from the light source is incident, and a first holder to which the board and the first lens are fixed, wherein: when viewed from a first direction intersecting an optical axis of the light source, light emitted from the first lens is substantially parallel light that is substantially parallel to the optical axis; when viewed from a second direction intersecting the optical axis and the first direction, the light emitted from the first lens is substantially parallel light that is inclined with respect to the optical axis; a first end portion of the first lens in the second direction is fixed to the first holder; and when viewed from a third direction along which the optical axis extends, the first holder does not project in the second direction farther than the first lens.
F21V 5/08 - Refractors for light sources producing an asymmetric light distribution
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
F21V 5/04 - Refractors for light sources of lens shape
F21V 17/00 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
G02B 3/06 - Simple or compound lenses with non-spherical faces with cylindrical or toric faces
A light emission module (100) includes: a substrate (110); a plurality of light sources (120) that are fixed on the substrate (110) and the outputs of which can be individually controlled; light blocking members that are disposed among the plurality of light sources (120); a first lens (131) that is disposed above the plurality of light sources (120) and on which light generated by each of the light sources (120) is incident; and a drive unit (140) that can rotate the substrate (110). The plurality of light sources (120) include a first light source and a second light source. An angle formed by the optical axis of first light generated by the first light source and emitted from the first lens (131) and the rotation axis (D3) of the substrate (110) is different from an angle formed by the optical axis of second light generated by the second light source and emitted from the first lens (131) and the rotation axis (D3). The second light can be radiated in a first circular orbit centered on the rotation axis (D3).
G03B 15/05 - Combinations of cameras with electronic flash apparatus; Electronic flash units
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
Provided is an optical circuit with which it is possible to reduce light source frequency fluctuations resulting from rotation. This optical circuit comprises: a substrate; a laser light source formed on the substrate by means of a first annular optical waveguide and a second annular optical waveguide sharing a portion with the first annular optical waveguide in one place; a first optical waveguide which is positioned spaced apart from the laser light source on the substrate, and which is optically coupled to the laser light source; and a resonator which is optically coupled to the first optical waveguide.
G01C 19/64 - Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A light-emitting device (100) comprises: an array light source (1) including a plurality of light-emitting units (10); a first lens (2) that irradiates a region to be irradiated with light emitted by the array light source (1); a movement mechanism (3) that relatively moves the first lens (2) and the array light source (1) in a direction crossing the optical axis of the first lens (2); and a control unit (4) including a light emission control unit that controls light emission of each of the plurality of light-emitting units (10), and a movement control unit that controls the operation of the movement mechanism (3). The light emission control unit controls light emission within a predetermined period of each of the plurality of light emission units, the movement control unit controls the operation of the movement mechanism such that the first lens and the array light source perform relative movement within the predetermined period, the relative movement includes first relative movement in which the first lens (2) and the array light source (1) relatively move along a first direction, each of the plurality of light-emitting units (10) has a light-emitting surface (11), the light emitting surfaces of the light-emitting units adjacent to each other are disposed with a first light-emitting surface spacing therebetween, and the distance of the first relative movement is a distance greater than or equal to the shorter of the first light emitting surface spacing or the width of the light-emitting surface 11 along the first direction.
This image display device according to one embodiment is equipped with an image-forming element and a light source. The image-forming element includes: a base material having a first surface; and a reflector array provided on the base material. The reflector array includes a plurality of reflector rows having a plurality of two-surface orthogonal reflectors provided along a first direction. The plurality of two-surface orthogonal reflectors each include: a first reflective surface to reflect light from the first surface side; and a second reflective surface which is orthogonal to the first reflective surface and reflects reflected light from the first reflective surface to the first surface side. With the base material serving as a reference, the tilt of the two-surface orthogonal reflectors is set such that an image is formed on the first surface side.
G02B 30/56 - Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images the image being built up from image elements distributed over a 3D volume, e.g. voxels by projecting aerial or floating images
Provided is a light source device capable of radiating light toned in a predetermined color. This light source device comprises: a plurality of light emission units each including a light emission surface; an optical member including one or a plurality of first regions in which light of a first chromaticity can be extracted and one or a plurality of second regions in which light of a second chromaticity different from the first chromaticity can be extracted, and which transmits or allows passage of light emitted by the light emission units; a first movement mechanism that causes the plurality of light emission units and the optical member to make a relative movement such that the light emission surfaces and the optical member face each other; and a control unit including a light emission control unit that controls the light emission of each of the plurality of light emission units and a first movement control unit that controls the operation of the first movement mechanism. The light emission control unit performs control to cause each of the plurality of light emission units to emit light within a predetermined period. The first movement control unit performs control to cause the plurality of light emission units and the optical member to make a relative movement within a predetermined period.
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
F21L 4/00 - Electric lighting devices with self-contained electric batteries or cells
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
F21V 14/00 - Controlling the distribution of the light emitted by adjustment of elements
F21V 14/02 - Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
F21V 14/06 - Controlling the distribution of the light emitted by adjustment of elements by movement of refractors
G03B 11/00 - Filters or other obturators specially adapted for photographic purposes
Provided is a solid electrolyte material for fluoride ion batteries that has high fluoride ion conduction. According to the present invention, a solid electrolyte material for fluoride ion batteries includes a metal fluoride complex that has, as a principal phase, a crystal structure that contains adduct ions in a fluorite structure that includes fluoride ions, lanthanoid metal ions, and alkali earth metal ions. The ion radius of the adduct ions is greater than the ion radius of the alkali earth metal ions. The composition of the metal fluoride complex is such that the ratio of the number of moles of the fluoride ions to the total number of moles of the lanthanoid metal ions, the alkali earth metal ions, and the adduct ions is greater than 1.87 but less than 3 and such that the ratio of the number of moles of the adduct ions to the number of moles of the alkali earth metal ions is less than 1.
H01M 10/36 - Accumulators not provided for in groups
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
The present invention provides: an optical circuit that provides stable optical coupling between a resonator and an optical waveguide; and an optical sensor comprising the same. The optical circuit (10) comprises a resonator (11) and an optical waveguide (23) that includes a ridge (231) formed upon substrate or a semiconductor layer (21). The resonator (11) has a light circulation plane (111) and is disposed such that part of the light circulation plane (111) faces the upper surface of the ridge (231), across a first gap (51). The distance (G) between part of the light circulation plane (111) and the upper surface of the ridge (231) facing said part of the light circulation plane (111) is shorter than the distance that an evanescent wave protrudes.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G01C 19/64 - Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
G01P 15/093 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by photoelectric pick-up
Provided are: a magnetic powder having outstanding high-frequency characteristics and having low iron loss and outstanding efficiency even when subjected to high frequency waves; a method for manufacturing a magnetic powder having outstanding high-frequency characteristics, and having low deterioration due to eddy currents and outstanding absorption characteristics even when exposed to ultra high frequency waves; a magnetic field-amplifying magnetic material having high frequency magnetic field-amplifying characteristics; and an ultra high frequency-absorbing magnetic material. The present invention relates to a method for manufacturing a magnetic powder, said method including a phosphorus treatment step for obtaining a phosphorus compound and a rare earth-iron-nitrogen magnetic powder by adding an inorganic acid to a slurry containing: a rare-earth-iron-nitrogen magnetic powder that contains R (where R is at least one selected from Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm; and, if Sm is included, Sm accounts for less than 50 atomic% of the R component as a whole), Fe, and N; water; and a phosphorus-containing substance. The present invention also relates to an ultra high frequency-absorbing magnetic material and a magnetic field-amplifying magnetic material containing a phosphorus compound and a rare earth-iron-nitrogen magnetic powder.
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
C23C 22/07 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing phosphates
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/08 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together
The present invention provides a positive electrode material capable of further improving load characteristics in a lithium ion secondary battery. Provided is a positive electrode material comprising: primary particles which include a lithium transition metal compound having an olivine structure; and carbon, to the surface of which the primary particles adhere, said positive electrode material including secondary particles which are obtained by aggregation of a plurality of the primary particles. In the positive electrode material, the content of carbon is more than 0.5 mass% but not more than 1.8 mass% with respect to the positive electrode material, and the lithium transition metal compound included in the positive electrode material has a crystallite size of 50-70 nm. The specific surface area of the positive electrode material is 14-45 m2/g.
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
Provided is a light-emitting device capable of facilitating identification of characters and the like when used by a subject person who has reduced visibility in blue light. This light-emitting device comprises: a light-emitting element having an emission peak wavelength within a range of 440-470 nm; and a wavelength conversion member including a plurality of fluorescent bodies that are excited by light from the light-emitting element and emit light. In the emission spectrum of the light-emitting device, the ratio of the emission intensity at a wavelength of 480 nm, the ratio of the emission intensity at a wavelength of 530 nm, and the ratio of emission intensity at a wavelength of 550 nm with respect to the emission intensity at an emission peak wavelength derived from the light-emitting element are 0.05-0.20, 0.20-0.35, and 0.23-0.38, respectively.
This laser adjustment method comprises: a first preparation step for acquiring, as a first damage image, an image that includes an image of first damage, the image being formed on a first film by irradiating, with first laser light, a first film wafer, which includes a first wafer and a first film provided on the first wafer; a second preparation step for preparing a second film wafer including a second wafer and a second film provided on the second wafer; a machining step for, after the first preparation step and the second preparation step, forming second damage on the second film by irradiating the second film wafer with second laser light; an image-capturing step for, after the machining step, acquiring, as a second damage image, an image that includes an image of second damage by capturing an image of the second film; and an adjustment step for, after the image-capturing step, adjusting an aberration to be given to the second laser light so that the image of second damage included in the second damage image is close to the image of first damage included in the first damage image.
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/062 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
47.
WIRING BOARD, PLANAR LIGHT-EMITTING DEVICE, AND PRODUCTION METHODS THEREFOR
[Problem] To provide a wiring board with which it is possible to supress an increase in the types of members in a double-sided board, and to decrease the production time and the number of steps. [Solution] This wiring board production method includes: a step for preparing a substrate 30 having an insulating resin 10 and a metal member 20 which has an anti-rust layer 21 formed on the surface disposed facing a second surface 10B of the insulating resin 10; a step for forming a plurality of first holes 51 that pass through the metal member 20 by etching; a step for forming a second hole 52 that passes through the insulating resin 10 from the first surface 10A side of the insulating resin 10, and communicates with at least one of the first holes 51; and a step for supplying a conductive paste 40 so as to connect the second hole 52 with one of the plurality of first holes 51 and disposing the conductive paste 40 on the first surface 10A of the insulating resin 10 so as to form wiring connected to the supplied conductive paste 40. The anti-rust layer 21 on the surface of the metal member 20 at inner bottom surface 52B of the second hole 52 is removed in the step for forming the second hole 52.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
This light source unit (11) comprises: a display device (110) capable of displaying an image; and an image-forming optical system (120) including an input element (121) on which light emitted from the display device (110) is incident and an output element (123) on which light passed through the input element (121) is incident, light emitted from the output element (123) forming a first image (IM1) that corresponds to said image. The image-forming optical system (120) is substantially telecentric on the first image (IM1) side. The light emitted from the display device (110) has a substantially Lambertian light distribution.
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
49.
SMFEN-BASED ANISOTROPIC MAGNETIC POWDER AND BONDED MAGNET, AND METHOD FOR PRODUCING SAID POWDER AND MAGNET
Provided are: an SmFeN-based anisotropic magnetic powder which exhibits excellent magnetic characteristics and having a low oxygen content; and a method for producing the same. The method for producing the SmFeN-based anisotropic magnetic powder comprises: a step for preparing a pre-dispersion SmFeN-based anisotropic magnetic powder containing Sm, Fe, La, W, and R (R is at least one selected from the group consisting of Ti, Ba, and Sr); and a step for dispersing the SmFeN-based anisotropic magnetic powder by using metal media that are covered with a resin or ceramic media that are covered with a resin. The SmFeN-based anisotropic magnetic powder contains Sm, Fe, La, W, and R (R is at least one selected from the group consisting of Ti, Ba, and Sr) and has an average particle diameter of 2.0 μm to 4.0 μm, inclusive, a remanent magnetization σr of 152 emu/g or more, and an oxygen content of 0.5% by mass or less.
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 9/20 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from solid metal compounds
B22F 9/24 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
50.
METHOD FOR PRODUCING SEMICONDUCTOR NANOPARTICLES, SEMICONDUCTOR NANOPARTICLES, AND LIGHT-EMITTING DEVICE
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
OSAKA UNIVERSITY (Japan)
NICHIA CORPORATION (Japan)
Inventor
Torimoto, Tsukasa
Kameyama, Tatsuya
Kuwabata, Susumu
Uematsu, Taro
Kubo, Tomoya
Ikagawa, Yohei
Oyamatsu, Daisuke
Abstract
Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. A method for producing semiconductor nanoparticles that includes subjecting a first mixture including a copper salt, a silver salt, a salt including indium and/or gallium, a gallium halide, and an organic solvent to a first heat treatment to obtain first semiconductor nanoparticles, at least one salt of the Cu salt, Ag salt, and salt that includes In and/or Ga in the first mixture including a compound that has a bond between a metal and sulfur (S).
This lighting device comprises: a light source; a lens on which light output from the light source is incident; and a reflector having multiple first reflection regions and reflecting output light from the lens at the respective first reflection regions in a first direction intersecting with an optical axis of the incident light on the lens. The multiple first reflection regions are arranged in steps such that first reflection regions positioned closer to a light-output side of the reflector in the first direction are distanced farther from the lens in a second direction in which the optical axis extends. Light output from a first part of the lens positioned on the light-output side in the first direction with respect to the optical axis has a light distribution angle smaller than the light distribution angle of light output from a second part of the lens positioned on the opposite side from the light-output side in the first direction with respect to the optical axis.
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
F21V 5/04 - Refractors for light sources of lens shape
F21V 5/08 - Refractors for light sources producing an asymmetric light distribution
F21V 7/09 - Optical design with a combination of different curvatures
F21V 9/00 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
F21V 13/04 - Combinations of only two kinds of elements the elements being reflectors and refractors
F21V 13/12 - Combinations of only three kinds of elements
G02B 30/33 - Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer’s left and right eyes of the autostereoscopic type involving directional light or back-light sources
This optical sheet laminate 100 is incorporated in a backlight unit 40 that uses a white light source 42. The optical sheet laminate 100 comprises: a diffusion sheet 43 provided with, in a first surface 21a, a plurality of recesses 22 each having substantially the shape of an inverted quadrangular pyramid; and a pair of prism sheets 44, 45, the respective prism extension directions thereof being perpendicular to one another. The diffusion sheet 43 is disposed as a single sheet or as a plurality of stacked sheets. The plurality of recesses 22 are arranged in a two-dimensional matrix, and the angle of intersection between the arrangement direction of the recesses 22 and the prism extension directions is 20° to 70°.
Provided is an apparatus for treating a fluid with ultraviolet light, which can have an improved treatment effect. The apparatus for treating a fluid with ultraviolet light is provided with a fluid inflow part, a fluid outflow part, and a flow passage part that connects the inflow part and the outflow part. The flow passage part includes a plurality of branched flow passage sections that branch from the inflow part, and a merging flow passage section that is connected on the downstream side of the plurality of branched flow passage sections. The apparatus is further provided with a first light source that can emit ultraviolet light to the merging flow passage section and a plurality of second light sources that can respectively emit ultraviolet light to the plurality of branched flow passage sections.
B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light
Provided are a light emitting device, lighting equipment, and a street lamp that emit light which is less likely to adversely affect the behavior of sea turtles while allowing humans to easily see illuminated objects. This light emitting device comprises a light emitting element that has a light-emission peak wavelength in a range from 400 nm to 490 nm, inclusive, and a first fluorescent body that has a light-emission peak wavelength in a range from 570 nm to 680 nm, inclusive. The light emitting device emits light such that: the correlated color temperature is equal to or less than 1950 K; the general color rendering index Ra is 40 or more; in a light emission spectrum of the light emitting device, the full width at half maximum of the light emission spectrum indicating the maximum light emission intensity is 110 nm or less; and an attraction index T for a sea turtle derived from equation (1) is 0.416 or less. Lighting equipment and a street lamp are also provided.
The present invention addresses the problem of providing a resin component production method that enables efficient bonding of olefin-based polymers or fluorine-based polymers together without using an additive or performing an additional process. As a solution to the problem, a resin component production method comprises: a step for preparing a first resin member containing a polymer and a second resin member containing a polymer; and a step for bonding a first bonding portion of the first resin member and a second bonding portion of the second resin member together. In the step for bonding the first resin member and the second resin member together, the polymer of the first bonding portion is irradiated with laser light having a peak wavelength of 350-420 nm in the presence of oxygen so as to cause multiphoton excitation in the polymer, and the first bonding portion and the second bonding portion are brought into contact with each other.
Provided is a semiconductor laser element having a periodic structure in which a threshold current is reduced. A semiconductor laser element comprising a nitride semiconductor stack having an optical waveguide, the nitride semiconductor stack comprising, in this order: a first n-side nitride semiconductor layer (31) having a periodic structure in which the refraction index is periodically changed along a resonance direction of the optical waveguide; a second n-side nitride semiconductor layer (32); an active layer (40) having one or more well layers and one or more barrier wall layers; and a p-side nitride semiconductor layer (50). The active layer (40) includes, among the one or more well layers, an n-side well layer positioned closest to the second n-side nitride semiconductor layer (32), and, among the one or more barrier wall layers, an n-side barrier wall layer positioned between the n-side well layer and the second n-side nitride semiconductor layer (32). The second n-side nitride semiconductor layer (32) is a nitride semiconductor layer comprising In and Ga. The thickness of the second n-side nitride semiconductor layer (32) is greater than the thickness of the n-side barrier wall layer.
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
Provided are a light-emitting device, lamp, and lighting fixture that emit light that readily promotes melatonin secretion. The light-emitting device, lamp, and lighting fixture are provided with a light-emitting element that has an emission peak wavelength in the range from 400 nm to 490 nm and with a first phosphor that has an emission peak wavelength in the range from 570 nm to 680 nm, and emit light for which: the correlated color temperature is not more than 1950 K, the average color rendering index Ra is at least 40, the full width at half maximum of the emission spectrum that shows the maximum emission intensity in the emission spectrum of the light-emitting device is not more than 110 nm, and the melanopic ratio MR derived from formula (1) is less than or equal to 0.233.
F21V 9/20 - Dichroic filters, i.e. devices operating on the principle of wave interference to pass specific ranges of wavelengths while cancelling others
F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
F21W 111/02 - Use or application of lighting devices or systems for signalling, marking or indicating, not provided for in groups for roads, paths or the like
An image-forming element according to one embodiment comprises a base material having a first surface, and a reflector array provided on the base material. The reflector array includes a plurality of reflector rows having a plurality of two-surface orthogonal reflectors provided along a first direction. The plurality of reflector rows are arranged in parallel with gaps therebetween in a second direction intersecting the first direction. The plurality of two-surface orthogonal reflectors each include a first reflective surface provided so as to reflect light from the first surface side, and a second reflective surface provided so as to be orthogonal to the first reflective surface and provided so as to reflect reflected light from the first reflective surface to the first surface side. The tilt of the second orthogonal reflectors is set such that an image is formed on the first surface side as referenced to the base material.
G02B 30/56 - Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images the image being built up from image elements distributed over a 3D volume, e.g. voxels by projecting aerial or floating images
G02B 5/124 - Reflex reflectors cube corner, trihedral or triple reflector type plural reflecting elements forming part of a unitary plate or sheet
G02B 30/60 - Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images involving reflecting prisms and mirrors only
This light emission device is provided with a package having three or more light emission elements, a base section having a mounting surface on which the light emission elements are disposed, and side wall sections which are disposed around the light emission elements and include a translucent incidence surface. The three or more light emission elements have: a first light emission element for emitting, along a first optical axis, a first light having an emission peak at a first wavelength; a second light emission element for emitting, along a second optical axis, a second light having an emission peak at a second wavelength; and, a third light emission element for emitting, along a third optical axis, a third light having an emission peak at a third wavelength. The angle between the first optical axis and the second optical axis in a top view is 3° to 45°, inclusive. The distance between the first optical axis and the second optical axis increases as the first light and the second light respectively travel along the first optical axis and the second optical axis. The first light, the second light, and the third light are incident on the incidence surface.
H01S 5/0233 - Mounting configuration of laser chips
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01S 5/0239 - Combinations of electrical or optical elements
60.
SMFEN-BASED ANISOTROPIC MAGNETIC POWDER, BONDED MAGET, METHOD FOR PRODUCING SAID SMFEN-BASED ANISOTROPIC MAGNETIC POWDER, AND METHOD FOR PRODUCING SAID BONDED MAGET
The present invention provides: an SmFeN-based anisotropic magnetic powder which exhibits excellent magnetic characteristics, while having a low oxygen content; and a method for producing this SmFeN-based anisotropic magnetic powder. The present invention provides a method for producing an SmFeN-based anisotropic magnetic powder, the method comprising: a step for preparing an SmFeN-based anisotropic magnetic powder before dispersion, the powder containing Sm, Fe and N; and a step for dispersing the SmFeN-based anisotropic magnetic powder before dispersion with use of metal media that are covered with a resin or ceramic media that are covered with a resin. The present invention also provides an SmFeN-based anisotropic magnetic powder which contains Sm, Fe and N, while having an average particle diameter of 2.5 μm to 5 μm, a remanent magnetization σr of 150 emu/g or more, and an oxygen content of 0.4% by mass or less.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/142 - Thermal or thermo-mechanical treatment
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
B22F 9/20 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from solid metal compounds
C22C 28/00 - Alloys based on a metal not provided for in groups
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
61.
LIGHT-EMITTING MATERIAL AND METHOD FOR PRODUCING SAME
Provided is a light-emitting material that includes a fluorescent material that emits bright red light. This light-emitting material includes a fluoride fluorescent material having a first composition that contains: an alkali metal comprising K; Si; Al; Mn; and F. If the total number of moles of the alkali metal in the first composition is 2, the total number moles of Si, Al and Mn is 0.9-1.1, the number of moles of Al is more than 0 but not more than 0.1, the number of moles of Mn is more than 0 but not more than 0.2, and the number of moles of F is not less than 5.5 but less than 6.0. The fluoride fluorescent material has a cubic crystal structure, and has a lattice constant of 0.8138 nm or more.
Provided is a fluoride fluorescent body capable of improving the reliability thereof in a light emission apparatus. This fluoride fluorescent body includes fluoride particles and an oxide that at least partially covers the surfaces of the fluoride particles. The oxide includes at least one element selected from the group consisting of Si, Al, Ti, Zr, Sn, and Zn at a percentage content of 2-30 mass%. The fluoride particles each have a compositional makeup containing: an element M including at least one selected from the group consisting of group-4 elements, group-13 elements, and group-14 elements; an alkali metal; Mn; and F. When the mol number of the alkali metal is set to 2, the mol number of Mn is more than 0 but less than 0.2, the mol number of the element M is more than 0.8 but less than 1, and the mol number of F is more than 5 but less than 7.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
Provided is an oxide phosphor having an emission peak wavelength of 800 nm or more. This oxide phosphor has a composition which contains Mg, Ga, O and Cr and which may, if necessary, contain a first element M1, a second element M2and a third element M3. If the total molar ratio of Ga, Cr, the second element M2and the third element M3is 2 relative to 1 mole of the composition of the oxide phosphor, the molar ratio of Mg or the total molar ratio of Mg and the first element M1 falls within the range 0.7-1.3, the molar ratio of O falls within the range 3.7-4.3, and the molar ratio of Cr falls within the range of more than 0.02 and not more than 0.3. The oxide phosphor has an emission peak wavelength within the range 800-1600 nm in an emission spectrum.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
A light source device (100) is provided with: a substrate (10) having a support surface (10A); a first sub-mount (20) having a first upper surface (20A) and a first mounting surface (20B) opposing the support surface (10A); one or more laser diodes (30) positioned between the substrate (10) and the first sub-mount (20) and having a p-side electrode surface (30B) and an n-side electrode surface (30A); a side wall section (15) provided on the substrate (10), having a second upper surface (15A) and an inner wall surface (15C), and defining by the inner wall surface (15C) a space (V) in which the laser diode (30) is housed; a heat dissipation member (60) provided on the first sub-mount (20); and, a metal member (50) joined to the heat dissipation member (60) and the second upper surface (15A) to seal the space (V). The height from the support surface (10A) to the first upper surface (20A) is different from the height from the support surface (10A) to the second upper surface (15A). One of the p-side electrode surface (30B) and the n-side electrode surface (30A) is directly or indirectly joined to the support surface (10A). The other of the p-side electrode surface (30B) and the n-side electrode surface (30A) is joined to the first mounting surface (20B).
Provided are a light emitting device, a lamp and a street light with a further reduced insect attracting effect. This light emitting device is provided with a light emitting element having a light emission peak wavelength in a range of 400 nm-490 nm and a first fluorescent body having a light emission peak wavelength in a range of 570 nm-680 nm. The light emitting device emits light of which: a correlated color temperature is no greater than 1950 K; an average color rendering index Ra is no less than 51; a full width at half maximum of a light emission peak having the maximum light emission intensity in a light emission spectrum of the light emitting device is no greater than 110 nm; and an insect attracting index I, which is the ratio of effective radiance of the light emitting device in consideration of the insectile spectral luminous efficiency of 250 nm-615 nm to the luminance of the emission of the light emitting device in a range of 380 nm-780 nm in consideration of the human standard photopic luminous efficiency function defined by the CIE (Commission internationale de l'éclairage), is no greater than 0.031.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
Provided are a light emitting device that enables glare reduction, a headlight, and a vehicle comprising the same. This light emitting device comprises: a light emitting element having a light emission peak wavelength in the range of 400-490 nm; and a wavelength conversion member that includes a first fluorescent substance having a light emission peak wavelength in the range of not less than 480 nm but less than 580 nm, and includes a second fluorescent substance having a composition different from the composition of the first fluorescent substance and having a light emission peak wavelength in the range of 580-680 nm. The light emitting device emits light in which a first luminance ratio Ls/L between a first effective radiation luminance Ls of light emission of the light emitting device in consideration of a human photopic spectral luminous efficiency curve specified by the International Commission on Illumination (CIE) and human S-cone spectral sensitivity, and a luminance L of light emission of the light emission device in consideration of the human photopic spectral luminous efficiency curve, is 0.9 or less.
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
OSAKA UNIVERSITY (Japan)
NICHIA CORPORATION (Japan)
Inventor
Torimoto, Tsukasa
Kameyama, Tatsuya
Kuwabata, Susumu
Uematsu, Taro
Ikagawa, Yohei
Oyamatsu, Daisuke
Kubo, Tomoya
Abstract
Provided is a method for producing semiconductor nanoparticles demonstrating band-edge luminescence and having excellent band-edge luminescence purity and internal quantum yield. This method for producing semiconductor nanoparticles includes: preparing first semiconductor nanoparticles that contain a semiconductor containing an element M1, an element M2, and an element Z, where element M1is at least one element selected from the group consisting of Ag, Cu, Au, and alkali metals, and includes at least Ag, element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and includes at least one of In and Ga, and element Z is at least one element selected from the group consisting of S, Se, and Te; obtaining second semiconductor nanoparticles by heat treating a mixture containing the first semiconductor nanoparticles, a compound including a group 13 element, and a compound including a group 16 element; and obtaining third semiconductor nanoparticles by heat treating the second semiconductor nanoparticles in the presence of a halide of a group 13 element.
A light-emitting device (1) comprises: a sidewall (15) having a first upper surface (11); a base (10) having a second upper surface, the perimeter thereof being surrounded by the sidewall (15); a light-emitting element disposed on the second upper surface; a joining member (30) disposed on the first upper surface (11); and a translucent member (40) that is joined to a portion of the first upper surface (11) via the joining member (30), and that has a lower surface (43) that includes a first region (41) disposed above the first upper surface (11) and a second region (42) disposed above the second upper surface. There is a gap which, between the lower surface (43) of the translucent member (40) and the first upper surface (11) of the sidewall (15), passes from a space (61) where the light-emitting element is disposed to the outside of the light-emitting device (1), and which is provided via the lower surface (43) of the translucent member (40), the first upper surface (11) of the sidewall (15), and the joining member (30). The joining member (30) is joined to the first region (41) and second region (42) of the lower surface (43) of the translucent member (40).
According to one embodiment, this method for producing an image display device comprises: a step for forming a graphene layer on a first surface of a substrate; a step for forming a semiconductor layer on the graphene layer; a step for machining the semiconductor layer to form a light-emitting element which includes a light-emitting surface on the graphene layer and an upper surface on the reverse side from the light-emitting surface; a step for forming a first insulating film which covers the first surface, the graphene layer and the light-emitting element; a step for forming a circuit element on the first insulating film; a step for forming a second insulating film which covers the first insulating film and the circuit element; a step for forming a first via which passes through the first insulating film and the second insulating film; and a step for forming a first wiring layer on the second insulating film. The first via is provided between the first wiring layer and the upper surface and electrically connects the first wiring layer and the upper surface.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
A method for manufacturing an image display device according to an embodiment comprises: a step for forming a first section of a single crystal metal on a substrate; a step for forming, on the first section, a semiconductor layer that includes a light-emitting layer; a step for processing the semiconductor layer to form a light-emitting element that includes a light-emitting surface on the first section; a step for forming a first insulating film that covers the substrate and the light-emitting element; a step for forming a circuit element on the first insulating film; a step for forming a light-blocking member between the circuit element and the light-emitting element; a step for forming a second insulating film that covers the first insulating film and the circuit element; a step for forming a first via penetrating the first and second insulating films; a step for forming a wiring layer on the second insulating film; a step for removing the substrate; and a step for removing at least a portion of the first section.
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
71.
METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE, AND IMAGE DISPLAY DEVICE
The method for manufacturing an image display device according to an embodiment comprises: a step for preparing a first substrate including a circuit element, a first wiring layer connected to the circuit element, and a first insulating film that covers the circuit element and the first wiring layer; a step for forming an electroconductive layer including a single crystal metal on the first insulating layer; a step for forming a semiconductor layer including a light-emitting layer on the single crystal metal; a step for processing the semiconductor layer to form a light-emitting element that includes a light-emitting surface; a step for forming a second insulating film that covers the first insulating film, the electroconductive layer, and the light-emitting element; a step for forming a first via that passes through the first and second insulating films; a step for forming a second wiring layer on the second insulating film; and a step for removing at least a part of the electroconductive layer on the light-emitting surface.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A method for manufacturing an image display device according to an embodiment comprises: a step of preparing a first substrate including a circuit element formed on a first surface of the substrate, a first wiring layer connected to the circuit element, and a first insulating film that covers the circuit element and the first wiring layer; a step of forming a graphene-including layer on the first insulating film; a step of forming a semiconductor layer including a light-emitting layer on the graphene-including layer; a step of processing the semiconductor layer to form a light-emitting element including a light-emitting surface on the graphene-including layer and a top surface on the side opposite to the light-emitting surface; a step of forming a second insulating film that covers the first insulating film, the graphene-including layer, and the light-emitting element; a step of forming a first via penetrating the first insulating film and the second insulating film; and a step of forming a second wiring layer on the second insulating film.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
This light-emitting device comprises: a support body having a wall section; a light-emitting element disposed on the support body and surrounded by the wall section when viewed in a plan view; a first transmissive member which has a first outer surface and a second outer surface positioned above the first outer surface and positioned further inside than the first outer surface when viewed in a plan view, and which covers the light-emitting element and the wall section; and a light-shielding member which covers the first transmissive member, wherein the first outer surface and the second outer surface are exposed from the light-shielding member, and the surface roughness of the first outer surface is greater than that of the second outer surface.
A method for manufacturing an image display device according to an embodiment of the present invention comprises: a step in which a substrate that includes a circuit and a first insulating film that covers the circuit is prepared; a step in which a layer that includes graphene is formed on the first insulating film; a step in which a semiconductor layer that includes a light-emitting layer is formed on the layer that includes graphene; a step in which the semiconductor layer is etched to form a light-emitting element that includes a base surface on the layer containing graphene and that includes a light-emitting surface which is a surface opposite the base surface; a step in which a second insulating film is formed, the film covering the layer that includes graphene, the light-emitting element, and the first insulating film; a step in which a first via that penetrates the first insulating film and the second insulating film is formed; and a step in which a wiring layer is formed on the second insulating film.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
75.
METHOD FOR PRODUCING IMAGE DISPLAY DEVICE, AND IMAGE DISPLAY DEVICE
A method for producing an image display device according to an embodiment of the present invention comprises: a step for preparing a substrate that comprises a circuit and a first insulating film that covers the circuit; a step for forming a conductive layer that contains a single crystal metal on the first insulating film; a step for forming a semiconductor layer that comprises a light-emitting layer on the conductive layer; a step for forming a light-emitting element by etching the semiconductor layer, the light-emitting element having a bottom surface on the conductive layer, while having a light emitting surface on the reverse side from the bottom surface; a step for forming a second insulating film that covers the conductive layer, the light-emitting element, and the first insulating film; a step for forming a first via that penetrates through the first insulating film and the second insulating film; and a step for forming a wiring layer on the second insulating film. The first via is provided between the wiring layer and the circuit, and electrically connects the wiring layer and the circuit to each other.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
The present invention provides a light-emitting element comprising a semiconductor stack having: a first light-emitting unit that comprises a nitride semiconductor including a first n-side semiconductor layer, a first p-side semiconductor layer, and a first active layer; a second light-emitting unit that is positioned over the first light-emitting unit and comprises a nitride semiconductor including a second n-side semiconductor layer, a second p-side semiconductor layer, and a second active layer; and a tunnel junction layer that is provided between the first p-side semiconductor layer and the second n-side semiconductor layer. The first n-side semiconductor layer includes a first stack part of a first concentration of n-type impurities having a multilayer structure in which first layers and second layers are alternatingly stacked, the second n-side semiconductor layer includes a second stack part of a second concentration of n-type impurities having a multilayer structure in which third layers and fourth layers having a different lattice constant than the third layers are alternatingly stacked, and the second concentration of n-type impurities is higher than the first concentration of n-type impurities.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
77.
METHOD FOR PRODUCING SEMICONDUCTOR NANOPARTICLES, SEMICONDUCTOR NANOPARTICLES, AND LIGHT-EMITTING DEVICE
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
OSAKA UNIVERSITY (Japan)
NICHIA CORPORATION (Japan)
Inventor
Torimoto, Tsukasa
Kameyama, Tatsuya
Kuwabata, Susumu
Uematsu, Taro
Ikagawa, Yohei
Oyamatsu, Daisuke
Kubo, Tomoya
Abstract
Provided is a method for efficiently producing semiconductor nanoparticles which luminesce at a band edge and have a high band-edge luminescence purity. The method for producing semiconductor nanoparticles includes heat-treating a mixture comprising a silver (Ag) salt, an indium (In) salt, a compound having a gallium-sulfur (Ga-S) bond, a gallium halide, and an organic solvent to obtain first semiconductor nanoparticles.
Provided is a carbon material having a large specific surface area and excellent filling properties. This carbon material has a circularity greater than 0.83 and a specific surface area of 400 m2/g or greater. This carbon material is produced by a production method comprising: preparing a suspension containing first carbon particles having a specific surface area of 50 m2/g or greater, a water-soluble binder, and water; obtaining a granulated body from the suspension; and processing the granulated body by heat to obtain second carbon particles.
In the present invention, the overall irradiation region of a plurality of lights can be made narrower. The present invention provides a light emission module comprising: a first light emitting device and a second light emitting device that individually have a plurality of semiconductor laser elements that emit laser beams, said first light emitting device and a second light emitting device emitting a plurality of laser beams spaced apart in the slow axis direction of the laser beams; a first optical unit that has one or more first reflective members provided with a plurality of reflective surfaces on which a plurality of laser lights impinge, said first optical unit reducing the spacing between the plurality of laser beams aligned in the slow axis direction, and emitting a plurality of laser beams; a second optical unit that has a plurality of second reflective members provided with a plurality of reflective surfaces on which a plurality of laser beams impinge, said second optical unit reflecting a plurality of laser beams emitted spaced apart in the fast axis direction at least twice, and emitting said beams at a smaller spacing and smaller width in the fast axis direction of each laser beam; and a condensing lens that condenses the plurality of laser beams that have passed through the first optical unit and the second optical unit.
There is a demand for a novel semiconductor element that operates by using dressed photons and for a method for manufacturing the same. This method for manufacturing a semiconductor element comprises: a step for preparing a semiconductor laminate provided with a silicon substrate having, at a first concentration, a first impurity of a first conductivity type that is a p-type or an n-type, and a silicon semiconductor layer, provided on the silicon substrate, including a first silicon semiconductor layer having, at a second concentration lower than the first concentration, a second impurity of the first conductivity type, and a second silicon semiconductor layer having a third impurity of a second conductivity type that is the other of the p-type and the n-type; and a step for irradiating the silicon semiconductor layer with light having a prescribed peak wavelength while passing a forward current to the silicon semiconductor layer, and thereby diffusing the third impurity.
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 33/34 - Materials of the light emitting region containing only elements of group IV of the periodic system
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
81.
OXIDE PHOSPHOR, LIGHT EMITTING DEVICE, AND METHOD FOR PRODUCING OXIDE PHOSPHOR
The present invention provides an oxide phosphor having an emission peak in a wavelength range from red light to near infrared light. Provided is an oxide phosphor having a composition that includes Ge, O (oxygen), Cr, at least one first element M1selected from the group consisting of Li, Na, K, Rb, and Cs, and at least one second element M2selected from the group consisting of Ca, Sr, Mg, Ba, and Zn, wherein, when the molar ratio of Ge in 1 mole of the composition of the oxide phosphor is 6, the molar ratio of the first element M1is in the range of 1.5 to 2.5, the molar ratio of the second element M2 is in the range of 0.7 to 1.3, the molar ratio of O (oxygen) is in the range of 12.9 to 15.1, and the molar ratio of Cr is 0.2 or less, and the oxide phosphor has an emission peak wavelength in the range of 700 nm to 1050 nm in the emission spectrum thereof.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
A light-emitting module (100) comprises: a first light source unit (110) including a first light source (111) and a first lens (112) in which the light projected from the first light source is incident; a drive unit (160) that can rotate the first lens; and a control unit (170) that, in unison with the drive unit, controls the output of the first light source. The central axis (f1) of the light (L1) projected from the first lens is inclined with respect to the rotational axis (C) of the first lens.
Provided is a red-light emitting fluorescent body having a high luminance. This fluoride fluorescent body has a first compositional makeup that includes Si, Al, Mn, F, and alkali metals including K. In the first compositional makeup, when the total number of moles of the alkali metals is set to 2, the total number of moles of Si, Al, and Mn is 0.9-1.1, the number of moles of Al is more than 0 but not more than 0.1, the number of mole of Mn is more than 0 but not more than 0.2, and the number of mole of F is 5.9-6.1. The fluoride fluorescent body has a cubic crystal structure, and has a lattice constant of 0.8138 nm or more.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
The present invention provides: a phosphor ceramic which emits light when excited by means of excitation light; and a method for producing a light emitting device. A method for producing a phosphor ceramic, said method comprising: a step for preparing a precursor that is either a molded body containing aluminum nitride or a sintered body containing aluminum nitride; and a step for obtaining an aluminum nitride phosphor ceramic, which has a europium content of more than 0.03% by mass but not more than 1.5% by mass, by bringing the precursor into contact with a gas that contains europium.
This light emitting device comprises: a base portion having a mounting surface; a first light emitting element disposed on the mounting surface to emit light that travels along a first optical axis; a second light emitting element disposed on the mounting surface to emit light that travels along a second optical axis; a third light emitting element disposed on the mounting surface to emit light that travels along a third optical axis; and one or more light reflecting members having a first light reflecting surface that has a first position irradiated with the light traveling along the first optical axis and is inclined with respect to the mounting surface, a second light reflecting surface that has a second position irradiated with the light traveling along the second optical axis and is inclined with respect to the mounting surface, and a third light reflecting surface that has a third position irradiated with the light traveling along the third optical axis and is inclined with respect to the mounting surface. In a top plan view, when the mounting surface is divided in half into a first region and a second region along the boundary of a virtual first straight line passing through the second position and the third position, the first light emitting element is disposed in the first region, and the second light emitting element and the third light emitting element are disposed in the second region. In the top plan view, the second light reflecting surface and the third light reflecting surface are disposed with the first light reflecting surface therebetween.
A method for manufacturing an image display device according to an embodiment comprises: a step for forming, on a first substrate, a conduction layer that includes a first section composed of a single-crystal metal; a step for forming, on the first section, a semiconductor layer that includes a light-emitting layer; a step for processing the semiconductor layer to form a light-emitting element that has a bottom surface on the first section, and includes a light-emitting surface on the reverse side from the bottom surface; a step for forming a first insulating film that covers the first substrate, the conduction layer, and the light-emitting element; a step for forming a circuit element on the first insulating film; a step for forming a second insulating film that covers the first insulating film and the circuit element; a step for removing part of the first insulating film and part of the second insulating film to expose a surface including the light-emitting surface; and a step for forming a wiring layer on the second insulating film.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
87.
METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE, AND IMAGE DISPLAY DEVICE
A method for manufacturing an image display device according to an embodiment comprises: a step for forming a graphene layer on a first substrate; a step for forming, on the graphene layer, a semiconductor layer that includes a light-emitting layer; a step for processing the semiconductor layer to form a light-emitting element that has a bottom surface on the graphene layer, and includes a light-emitting surface on the reverse side from the bottom surface; a step for forming a first insulating film that covers the first substrate, the graphene layer, and the light-emitting element; a step for forming a circuit element on the first insulating film; a step for forming a second insulating film that covers the first insulating film and the circuit element; a step for removing part of the first insulating film and part of the second insulating film to expose the light-emitting surface; a step for forming a via that passes through the first insulating layer and the second insulating layer; and a step for forming a wiring layer on the second insulating film.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
88.
PRODUCTION METHOD FOR PHOSPHATE-COATED SmFeN-BASED ANISOTROPIC MAGNETIC POWDER AND PHOSPHATE-COATED SmFeN-BASED ANISOTROPIC MAGNETIC POWDER
The present invention provides: a phosphate-coated SmFeN-based anisotropic magnetic powder that has excellent coercivity; and a production method for the phosphate-coated SmFeN-based anisotropic magnetic powder. The present invention relates to a production method for a phosphate-coated SmFeN-based anisotropic magnetic powder that includes a step for adding an inorganic acid to a slurry that includes an SmFeN-based anisotropic magnetic powder, water, and a phosphate compound and adjusting the pH of the slurry to 1–4.5 to obtain an SmFeN-based anisotropic magnetic powder that is coated with phosphate.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/16 - Metallic particles coated with a non-metal
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 1/08 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together
89.
PRODUCTION METHOD OF PHOSPHATE-COATED SmFeN-BASE ANISOTROPIC MAGNETIC POWDER, AND BOND MAGNET
A production method of an anisotropic magnetic powder having excellent hot water resistance, and a bond magnet, are provided. The present invention relates to a production method of a phosphate-coated SmFeN-base anisotropic magnetic powder involving: a phosphate treatment step in which an inorganic acid is added to a slurry containing an SmFeN-base anisotropic magnetic powder, water and a phosphate compound to adjust the pH of the slurry to 1-4.5, thereby obtaining an SmFeN-base anisotropic magnetic powder coated on the surface with a phosphate; and an oxide step in which the phosphate-coated SmFeN-base anisotropic magnetic powder is heat-treated at 200-330°C in an oxygenous atmosphere.
B22F 1/16 - Metallic particles coated with a non-metal
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
B22F 9/20 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from solid metal compounds
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
In the present invention, a first side surface of a first light guide part has a first A side surface and a first B side surface. A second side surface of a second light guide part has a second A side surface opposed to the first A side surface and a second B side surface opposed to the first B side surface. A light reflection member is disposed on the first B side surface and/or the second B side surface so as to cause the first A side surface and the second A side surface to be exposed. The distance between the first A side surface and the second A side surface is shorter than the distance between the first B side surface and the second B side surface.
The present invention provides a light source device and a light guide array unit with which it is possible to, regardless of the arrangement of light source units, apply light rays in an arrangement different from the arrangement of the light source units. This light source device comprises a plurality of light source units for respectively applying light rays. The light source unit has a light emitting element and a light guide member. The plurality of light source units are disposed while combining at least a rectangular lattice shape and a triangular lattice shape or disposed concentrically in a circular plane-shaped disposition region, and the light rays respectively applied by the plurality of light source units are arranged in a matrix in a region to be irradiated.
G03B 15/05 - Combinations of cameras with electronic flash apparatus; Electronic flash units
F21L 4/00 - Electric lighting devices with self-contained electric batteries or cells
F21V 19/00 - Fastening of light sources or lamp holders
F21Y 105/18 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array polygonal other than square or rectangular, e.g. for spotlights or for generating an axially symmetrical light beam
Provided is a light-emitting device that comprises a light-emitting element and a light-reflecting covering member which covers the light-emitting element and which includes plate-form light reflective material (11), silica, and an alkali metal, wherein, in the high performance, light-reflecting covering member, the average particle diameter of the light reflective material is 0.6-43 μm, and the average aspect ratio of the light reflective material is greater than or equal to 10. A method of producing this light-emitting device is also provided.
The present invention relates to a method for producing a composite member, said method including: a step in which a first molded body is fitted together with a first composite body including a rare earth magnet and a member in contact with the rare earth magnet so that said first molded body covers at least the entire surface of the rare earth magnet in the first composite body, and a second composite body is thereby produced; and a step in which the second composite body is inserted in a mold, at least the entire surface not covered by the first molded body in the first composite body is covered, a thermoplastic resin is injection molded so as to be in contact with the first molded body, and a second molded body is formed.
H02K 15/03 - Methods or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies having permanent magnets
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
94.
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
This light-emitting device comprises: a first light-emitting element that emits first light having a first peak wavelength; a second light-emitting element that emits second light having a second peak wavelength whichdiffers from the first peak wavelength; and an optical control unit that receives first light and second light which have optical axes that are not parallel, and emits first light and second light which have parallel optical axes. The optical control unit comprises: one or two first optical members that form a first region that reflects the first light in a first optical path length, a second region that reflects the first light in a second optical path length longer than the first optical path length, and a third region that transmits the first light and reflects the second light; and a second optical member that has a reflective surface that reflects the second light.
Provided is a light emitting device having excellent color rendering properties and a specific melanopic ratio. The light emitting device has a light emitting element, and a fluorescent member including a fluorescent body, and satisfies any one of the following conditions: condition (A) in which the correlation color temperature of light emission of the light emitting device falls within the range of 4,500 K to 7,500 K, the content of a first fluorescent body falls within the range of 29 mass% to 90 mass%, and a melanopic ratio falls within the range of 1.0 to 1.4; condition (B) in which the correlation color temperature of light emission of the light emitting device falls within the range of 2,500 K to 4,500 K (exclusive of 4,500 K), the content of the fluorescent body falls within the range of 25 mass% to 90 mass%, and a melanopic ratio falls within the range of 0.7 to 1.1; and condition (C) in which the correlation color temperature of light emission of the light emitting device falls within the range of 2,500 K to 3,000 K, the content of the fluorescent body falls within the range of 20 mass% to 90 mass%, and a melanopic ratio falls within the range of 0.48 to 1.10.
According to the embodiments, the production method for an image display device comprises a step for preparing a semiconductor layer, a step for pasting the semiconductor layer onto a first surface of a translucent substrate, a step for etching the semiconductor layer to form a light-emitting element that includes a light emission surface that is on the first surface and an upper surface that is on the reverse side from the light emission surface, a step for forming a first insulating film that covers the first surface and the light-emitting element, a step for forming a circuit element on the first insulating film, a step for forming a second insulating film that covers the first insulating film and the circuit element, a step for forming a first via that passes through the first insulating film and the second insulating film, and a step for forming a first wiring layer on the second insulating film. The first via is provided between the first wiring layer and the upper surface and electrically connects the first wiring layer and the upper surface.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
97.
IMAGE DISPLAY DEVICE AND METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE
An image display device according to an embodiment is provided with: a substrate; a first wire formed on the substrate along a first direction; a first light emitting element provided on the first wire and having a first light emitting surface; a first optically transmissive electrode formed along a second direction intersecting the first direction and provided on the first light emitting surface; a first anisotropic electrically conductive member provided on the first wire; a first terminal electrically connected to the first wire via the first anisotropic electrically conductive member; a second anisotropic electrically conductive member provided on the first optically transmissive electrode; and a second terminal electrically connected to the first optically transmissive electrode via the second anisotropic electrically conductive member. The first light emitting element has a first bottom surface on the first wire, and the first light emitting surface is provided on a side opposite the first bottom surface.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
98.
METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
This method for manufacturing an image display device according to an embodiment comprises: a step for preparing a semiconductor layer; a step for joining the semiconductor layer to a first substrate with a first metal layer interposed; a step for affixing the semiconductor layer to a translucent substrate; a step for removing the first substrate, etching the semiconductor layer, and forming a light emitting element that includes a light emitting surface and a top surface; a step for etching the first metal layer, and forming a light shielding electrode that covers the top surface; a step for forming a first insulating film that covers the light emitting element and the light shielding electrode; a step for forming a circuit element on the first insulating film; a step for forming a second insulating film that covers the first insulating film and the circuit element; a step for forming a first via that penetrates the first insulating film and the second insulating film; and a step for forming a first wiring layer on the second insulating film.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
99.
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
The present invention comprises: a first light-emitting part including a first n-side semiconductor layer, a first active layer provided on the first n-side semiconductor layer, and a first p-side semiconductor layer provided on the first active layer; a second light-emitting part including a second n-side semiconductor layer provided on the first p-side semiconductor layer, a second active layer provided on the second n-side semiconductor layer, and a second p-side semiconductor layer provided on the second active layer; a first layer that is provided between the first light-emitting part and the second light-emitting part so as to be in contact with the first p-side semiconductor layer and that contains an n-side impurity at a first concentration; and a second layer that is provided between the first layer and the second n-side semiconductor layer and that contains an n-type impurity at a second concentration. The second n-side semiconductor layer contains an n-type impurity at a third concentration. The first concentration and the second concentration are higher than the third concentration. The first concentration is higher than the second concentration. The thickness of the second layer is greater than the thickness of the first layer.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
100.
POSITIVE ELECTRODE ACTIVE MATERIAL AND POSITIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
Provided is a positive electrode active material which inhibits a decrease in discharge capacity while improving output in a low-SOC region. The positive electrode active material comprises: first particles that are constituted by a first lithium transition metal composite oxide which has a layered structure and in which the ratio of the number of moles of nickel to the total number of moles of metal other than lithium in the composition thereof is 0.7 or more and less than 1; second particles that are constituted by a second lithium transition metal composite oxide which has a volume average particle size smaller than the volume average particle size of the first particles and which has a layered structure; and third particles that are constituted by a third lithium transition metal composite oxide which has a layered structure, in which the ratio of the number of moles of nickel to the total number of moles of metal other than lithium in the composition thereof is 0.4-0.6, and in which the ratio of the number of moles of cobalt to the total number of moles is 0.35-0.55, wherein the first particle content is 60 mass% or higher and lower than 100 mass%, and the third particle content is 10 mass% or lower, relative to the sum of the first particles, the second particles, and the third particles.
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
patents
