A planar light source includes a substrate, light sources, and at least one partitioning member. The partitioning member includes first wall parts, second wall parts, and partitioned regions. The first wall parts define first ridges extending in a first direction. The second wall parts define second ridges extending in a second direction. The partitioned regions each is surrounded by the first ridges and the second ridges in a plan view. the partitioned regions are arranged in the first and second directions. At least one first cut is defined on at least one of the first ridges. At least one second cut is defined on at least one of the second ridges. The at least one first cut and the at least one second cut are spaced apart from each other. At least one of the light sources is arranged in a corresponding one of the partitioned regions.
A light emitting module according to an embodiment of the present disclosure includes a light source, a lens disposed over the light source and configured to transmit light from the light source, and a cover member disposed over the lens, wherein the cover member includes, in a top view, a first region, a second region located around the first region and having a higher light diffusion effect than the first region, and a third region located inward of the first region and on which the light from the light source transmitted through the lens is incident.
A method of manufacturing a light emitting element includes: an n-side nitride semiconductor layer growing process in which an n-side nitride semiconductor layer is grown; an active layer growing process in which an active layer comprising a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers is grown on the n-side nitride semiconductor layer, wherein the active layer is configured to emit ultraviolet light; and a p-side nitride semiconductor layer growing process in which a A-side nitride semiconductor layer is grown on the active layer. The active layer growing process includes: a first barrier layer growing process, a second barrier layer growing process, and a well layer growing process.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
4.
METHOD OF PRODUCING PHOSPHATE-COATED SmFeN-BASED ANISOTROPIC MAGNETIC POWDER
A method of producing a phosphate-coated SmFeN-based anisotropic magnetic powder, the method including stirring a slurry containing a raw material SmFeN-based anisotropic magnetic powder, water, a phosphate source, and an aluminum source to obtain a SmFeN-based anisotropic magnetic powder having a surface coated with a phosphate.
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
B22F 1/142 - Thermal or thermo-mechanical treatment
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 1/16 - Metallic particles coated with a non-metal
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
A light-emitting device includes a semiconductor laser element, a wavelength conversion member, and a package. The wavelength conversion member includes a wavelength conversion portion and a reflective portion as in the specification. The wavelength conversion portion includes a light incident surface and a light-emitting surface as in the specification. The package includes a disposition region as in the specification. The wavelength conversion member is disposed at a position away in a first direction from a position at which the semiconductor laser element is disposed. In a plan view perpendicular to the light-emitting surface, the light-emitting surface has a shape that has a first region as in the specification, and a region of at least 80% or more of the light incident surface overlaps an imaginary line that passes through a point of the light-emitting surface closest to the semiconductor laser element and that is parallel to the second direction.
A light emitting device includes a package, a cap, a joining member and at least one laser element. The package includes a metal film. The cap includes a light-transmissive member having a lower surface facing the package and an upper surface opposite to the lower surface, and a light blocking film arranged on the lower surface of the light-transmissive member and having a shape defining at least one opening. The joining member joins a part of the light blocking film and the metal film. The at least one laser element is positioned in a space bounded by the cap and the package such that a part of an edge of the at least one opening defined by the light blocking film is disposed directly above the at least one laser element.
A method of preparing an anisotropic magnetic powder compression molded product, the method including: compressing a magnetic powder in a mold using a compression punch while magnetically orienting the magnetic powder to obtain a compressed magnetic powder, wherein the compression punch has a contact surface with the magnetic powder that is not perpendicular to a compression direction; and compression molding the compressed magnetic powder using a molding punch having a different shape from the compression punch.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/142 - Thermal or thermo-mechanical treatment
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
This light source device comprises: one or more first light source parts, one or more second light source parts, and a light-shielding member disposed between the first light source parts and the second light source parts. The first light source parts each have two or more first laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. The second light source parts each have one or more second laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. In the first light source part, the two or more first laminated bodies are continuously laminated in the first direction. The number of first laminated bodies included in the first light source part is smaller than the number of second laminated bodies included in the second light source part.
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
G03B 15/05 - Combinations of cameras with electronic flash apparatus; Electronic flash units
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
A light-emitting device includes a light-emitting element a semiconductor structure body including an n-side layer, a p-side layer, and an active layer, the n-side layer including an n-side exposed surface exposed from the active layer and the p-side layer in a plan view. The semiconductor structure body includes a side surface connecting the n-side exposed surface and an upper surface of the p-side layer. An insulating film includes a first opening exposing the n-side exposed surface, and a second opening positioned above the upper surface of the p-side layer. An n-side electrode includes a first part positioned above the upper surface of the p-side layer with the insulating film interposed, a second part electrically connected with the n-side exposed surface in the first opening and electrically connected with the first part located at the insulating film covering the side surface, and a third opening that exposes the insulating film covering the side surface of the semiconductor structure body. A light-reflective member contacts the insulating film in the third opening.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A light-emitting device includes a semiconductor laser element, a wavelength conversion member, and a package. The wavelength conversion member includes a wavelength conversion portion and a reflective portion. The wavelength conversion portion includes a light incident surface and a light-emitting surface. The package includes a disposition region. The wavelength conversion member is disposed at a position away in a first direction from a position at which the semiconductor laser element is disposed. The light-emitting surface has a shape that, in a plan view perpendicular to the light-emitting surface, has a first region decreasing in width in a second direction perpendicular to the first direction from the side closest to the semiconductor laser element toward the first direction.
The present disclosure provides a light emitting device comprising a cover member having higher heat resistance, and a method for manufacturing the light emitting device. This light emitting device 1 comprises: a light emitting element 10 provided with a semiconductor structure 11 having a light emitting surface 11a, an electrode forming surface 11b positioned on the side opposite to the light emitting surface 11a, and a side surface 11c positioned between the light emitting surface 11a and the electrode forming surface 11b, and a first electrode 12 that is disposed on the electrode forming surface 11b and that has a first surface 12a facing the electrode forming surface 11b, a second surface 12b positioned on the side opposite to the first surface 12a, and a side surface 12c positioned between the first surface 12a and the second surface 12b; and a light reflective member 20 covering the light emitting element 10 except for the light emitting surface 11a and the second surface 12b, wherein the light reflective member 20 includes a light reflective inorganic member 21 covering at least the side surface 11c of the semiconductor structure 11, and a light reflective resin member 22 covering the side surface 12c of the first electrode 12 and the light reflective inorganic member 21.
A light emitting device according to the present invention includes: a base having a mounting surface; a plurality of semiconductor laser elements each emitting a laser beam in a first direction and arranged on the mounting surface along a second direction intersecting the first direction; a plurality of first mirror members each having a first reflecting surface that reflects the laser beam emitted from the corresponding semiconductor laser element and changing the traveling direction of the laser beam in a direction away from the mounting surface; a cover body that transmits the laser beams reflected by the first reflecting surfaces; and one or more second mirror members arranged on the cover body, having second reflecting surfaces that reflect the laser beams transmitted through the cover body, and further changing the traveling direction of the laser beams. The plurality of first mirror members are arranged on the mounting surface such that positions of the first reflecting surfaces in the first direction are different from one another. With the mounting surface serving as a reference surface, the heights of the optical axes of the laser beams reflected by the second reflecting surfaces from the reference surface are different from one another.
A cap has a cavity for accommodating a light-emitting element and includes a front wall defining a front surface of the cavity and made of a material that transmits light emitted from the light-emitting element; a rear wall defining a rear surface of the cavity and located opposite to the front wall; and a main body defining an upper surface and a lateral surface of the cavity and joined with the front wall and the rear wall. A lower end surface of each of the front wall, the rear wall, and the main body defines a bonding surface of the cap, and the main body includes a plurality of portions layered between the rear wall and the front wall.
H01S 5/02257 - Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
H01S 5/02218 - Material of the housings; Filling of the housings
A method of manufacturing a light emitting device includes: providing a light emitting element having an upper surface and a plurality of side surfaces connected to the upper surface; applying an adhesive resin onto the upper surface and the plurality of side surfaces of the light emitting element such that a lower end of the adhesive resin at a corner where adjacent ones of the side surfaces of the light emitting element meet is positioned lower than a lower end of the adhesive resin at a center of each of the side surfaces of the light emitting element; disposing a light transmissive member over the upper surface of the light emitting element with the adhesive resin being interposed between the light transmissive member and the upper surface of the light emitting element, and pressing the adhesive resin with the light transmissive member; and curing the adhesive resin.
A light emitting module includes a light source, a first lens configured to transmit light from the light source and including at least a portion that is elastically deformable, and an actuator configured to move the first lens in a direction along an optical axis of the first lens. The light source includes a contact portion with which the first lens comes into contact. The actuator is configured to move the first lens to change a state of the first lens relative to the contact portion of the light source.
A light source device includes a substrate, an edge-emitting laser element, a surface-emitting laser element, and an optical member. The substrate has a supporting surface. The edge-emitting laser element is directly or indirectly supported by the supporting surface and configured to emit a first light beam in a first direction. The surface-emitting laser element is directly or indirectly supported by the supporting surface and configured to emit a second light beam in a second direction different from the first direction. The optical member is configured to receive the first light beam and the second light beam and to cause the first light beam and the second light beam to exit the optical member as light beams traveling along a same axis.
An anti-fuse element includes a first electrode, an insulating layer disposed on the first electrode, and a second electrode disposed on the insulating layer. The insulating layer includes a first region and a second region, with a thickness of the first region being smaller than a thickness of the second region. An outer edge of the second electrode is located inward of an outer edge of the insulating layer in a top view.
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
A light-emitting device includes a substrate, a light-emitting element, a wavelength conversion layer, a light adjustment member, a light-transmissive member, and a covering member. The light-emitting element includes first and second light-emitting portions. The wavelength conversion layer contains a first phosphor that performs wavelength conversion of first light emitted from the first light-emitting portion and second light emitted from the second light-emitting portion into third light. The light adjustment member is disposed partially over the wavelength conversion layer and overlaps one of the first light-emitting portion and the second light-emitting portion in plan view. The light-transmissive member is disposed over the wavelength conversion layer and the light adjustment member. The covering member covers a side surface of the light-emitting element, a side surface of the wavelength conversion layer, a side surface of the light adjustment member, and a side surface of the light-transmissive member.
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
20.
DISPLAY DRIVING CIRCUIT, DISPLAY DEVICE, ROAD SIGN BOARD, AND DRIVING METHOD FOR DISPLAY DEVICE
A display driving circuit drives a display unit including a plurality of light-emitting elements connected along respective common lines and arranged in a matrix. The driving circuit includes one or more element drivers for driving the plurality of light-emitting elements of the display unit, a memory that stores lighting period information indicating a lighting period in which each light-emitting element is lit by the one or more element drivers, an element lighting period controller that outputs the lighting period information stored in the memory to each element driver, a switching unit that selects each common line based on the lighting period information stored in the memory, and a common line lighting period controller that is interposed between the memory and the switching unit and controls a lighting period in which each common line is activated according to the lighting period information.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A method for manufacturing a semiconductor element includes preparing a semiconductor structure body that includes a p-side layer and an n-side layer; forming a first carbon film on the p-side layer by vapor deposition, the vapor deposition utilizing carbon ions generated by an arc discharge without introducing a gas to a discharge space, the discharge space being a vacuum; forming a second carbon film on the n-side layer by the vapor deposition; removing the first carbon film; and removing the second carbon film. A first bias voltage of the forming during the first carbon film on the p-side layer is higher than a second bias voltage of the forming during the second carbon film on the n-side layer.
A method of manufacturing a light emitting device includes providing an intermediate body having a light emitting element, a bottom part on which the light emitting element is disposed, and a first wall disposed on the bottom part and surrounding the light emitting element apart from a lateral face of the light emitting element. The method further includes disposing a light transmissive member having a height in excess of the height of the first wall and covering the upper face of the first wall and the light emitting element, forming a first groove by removing a portion of the light transmissive member thereby exposing at least a portion of the upper face of the first wall, forming a second wall by disposing a first resin in the first groove, and cutting the second wall along a lengthwise direction of the first groove thereby obtaining the light emitting device.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
24.
METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT
A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
25.
VEHICLE LIGHT-EMITTING DEVICE AND VEHICLE LIGHTING DEVICE
The vehicle light-emitting device includes a light-emitting element having a peak emission wavelength of 400 nm or greater and 510 nm or less, and a fluorescent member including a first phosphor excited by light emitted by the light-emitting element and emitting light having a peak emission wavelength of 480 nm or greater and 530 nm or less a second phosphor excited by the light emitted by the light-emitting element and emitting light having a peak emission wavelength of 540 nm or greater and 600 nm or less. The vehicle light-emitting device emits light in a region AL in a CIE1931 chromaticity diagram as defined in the present disclosure.
A light-emitting device includes: a substrate having an upper surface; at least one light-emitting element on or above the substrate, the at least one light-emitting element having a rectangular shape in a plan view from above the light-emitting device and having an upper surface serving as a light-emitting surface of the at least one light-emitting element; a plate-shaped light-transmissive member having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of the at least one light-emitting element; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/54 - Encapsulations having a particular shape
A light-emitting module includes one or more light-emitting devices, and a wiring substrate. Each of the light-emitting devices includes light-emitting elements, and a package including a lower surface having a wiring region. The wiring substrate includes a metal portion, an electrode portion, and an insulating portion, and defines one or more first through holes. The mounting surface of the wiring substrate includes a first region where the metal portion defines an uppermost surface, a second region where the electrode portion defines an uppermost surface, and a third region where the insulating portion defines an uppermost surface. The first region and the second region are separated from each other by the third region. A boundary of each of the first through holes is defined in the first region. The wiring region of each of the light-emitting devices is bonded to the electrode portion of the wiring substrate.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
28.
CERAMIC SINTERED BODY SUBSTRATE, LIGHT-EMITTING DEVICE, AND MANUFACTURING METHODS THEREOF
A method for manufacturing a ceramic sintered body substrate includes of disposing a first metal paste on a surface of a ceramic substrate, and of firing the ceramic substrate on which the first metal paste is disposed. In the disposing the first metal paste, the first metal paste contains a plurality of first metal powders, a plurality of active metal powders, and a plurality of inorganic fillers excluding metals, and in the firing the ceramic substrate, a firing temperature is equal to or higher than a melting point of the first metal powders.
C04B 41/53 - After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of part of the materials of the treated article
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
29.
LIGHT EMITTING DEVICE INCLUDING LIGHT-TRANSMISSIVE MEMBER AND LENS MEMBER
A light emitting device includes: at least one semiconductor laser element; a base member on which the at least one semiconductor laser element is disposed; a light-transmissive member including: an upper surface, a lower surface, and a light-transmissive region through which laser light emitted from the at least one semiconductor laser element is transmitted from the lower surface to the upper surface; and a lens member through which the laser light emitted from the at least one semiconductor laser element, the lens member being fixed to the base member or the light-transmissive member. At least the light-transmissive region is made of sapphire. The light-transmissive member includes an incident surface on which the laser light is incident, the incident surface being an a-plane of the sapphire.
Provided is a method for manufacturing a ceramic sintered body substrate, the method including: preparing a ceramic substrate 1 in which a through-hole 2 is formed before firing (S11); disposing a first metal paste 3 in the through-hole (S12); and firing the ceramic substrate in which the first metal paste is disposed (S14). In the process for disposing the first metal paste, the first metal paste includes a plurality of first metal powders (4) and a plurality of active metal powders (50). The first metal powders include a metal powder (4a) that serves as a core, and a coating metal member (40b) that covers at least part of the metal powder, the coating metal member (40b) having a melting point lower than that of the metal powder. In the process for firing the ceramic substrate, the firing temperature is equal to or greater than 700°C and is less than the melting point of the metal powder.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
A light emitting device includes: an insulating base; a first upper metal part located on an upper surface of the base; a first light emitting element that is disposed on the upper surface of the base with the first upper metal part being interposed between the first light emitting element and the base, and is configured to emit light laterally from a first emission end surface of the first light emitting element; a first reflective member that is disposed on the upper surface of the base without the first upper metal part being interposed between the first reflective member and the base, faces the first light emitting element, and has a first reflective surface configured to reflect the light upward; and one or more lower metal parts located on the lower surface of the base.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
32.
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
A light emitting device includes: a substrate; a light emitting element; a wavelength conversion layer; and a wall surrounding the wavelength conversion layer, having an opening portion exposing at least a part of a top surface of the wavelength conversion layer, and containing a light reflective material. The surface of the wall includes a top surface provided at a higher position than the top surface of the wavelength conversion layer, and an inner surface forming the opening portion. The wall includes a first portion surrounding the wavelength conversion layer, and a second portion provided over the first portion and surrounding the first portion. The opening portion is hollow. An angle of a corner portion between the top surface and the inner surface of the wall is in a range of 90 degrees or greater and less than 180 degrees.
Provided is a light-emitting module capable of controlling a region that is partially irradiated with light within a region to be irradiated. This light-emitting module comprises: a light source that is provided with a plurality of light-emitting units each including a light-emitting surface; a first lens that transmits light from the plurality of light-emitting units; a drive unit that varies the relative inclination between the optical axis of the first lens and the light-emitting surfaces; and a control unit capable of controlling light emission of each of the plurality of light-emitting units and the operation of the drive unit. The light-emitting surfaces of the light-emitting units adjacent to each other are disposed with a predetermined space therebetween when viewed from above, a region to be irradiated is irradiated with the light transmitted through the first lens, and the control unit is capable of controlling the operation of the drive unit so as to compensate for the illuminance of a region corresponding to the predetermined space within the region to be irradiated in a predetermined period.
F21V 5/04 - Refractors for light sources of lens shape
F21V 17/00 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
F21V 17/02 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages with provision for adjustment
A method for manufacturing a light-emitting element includes preparing a wafer that includes a semiconductor structure body and a light-transmitting conductive film; forming a first mask on the light-transmitting conductive film; removing the light-transmitting conductive film exposed from the first mask to form an opening in the light-transmitting conductive film, the opening exposing the semiconductor structure body from under the light-transmitting conductive film; forming an n-side exposed part by removing the semiconductor structure body exposed from the first mask; removing the first mask; forming a second mask on the light-transmitting conductive film; removing the light-transmitting conductive film exposed from the second mask; forming an n-side electrode at the n-side exposed part; forming a third mask on the light-transmitting conductive film and on the semiconductor structure body; and removing the semiconductor structure body to form a groove dividing the semiconductor structure body into a plurality of element parts.
A method for producing a ceramic complex includes: preparing a raw material mixture that contains 5% by mass or more and 40% by mass or less of first rare earth aluminate fluorescent material particles containing an activating element and a first rare earth element different from the activating element, 0.1% by mass or more and 32% by mass or less of oxide particles containing a second rare earth element, and the balance of aluminum oxide particles, relative to 100% by mass of the total amount of the first rare earth aluminate fluorescent material particles, the oxide particles, and the aluminum oxide particles; preparing a molded body of the raw material mixture; and obtaining a sintered body by calcining the molded body in a temperature range of 1,550° C. or higher and 1,800° C. or lower.
C04B 35/10 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
C04B 35/44 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminates
A resin composition includes a silicone resin, a Mn-activated fluoride phosphor, and a chelating agent. The chelating agent may include, for example, at least one selected from the group consisting of an aminocarboxylic-acid-based chelating agent and a phosphonic-acid-based chelating agent. The light-emitting device is provided with, for example, a substrate, a light-emitting element disposed on the substrate, and a wavelength conversion member covering the light-emitting element. The wavelength conversion member of the light-emitting device includes a cured product of a silicone resin, a Mn-activated fluoride phosphor, and a chelating agent.
A package includes: a bottom portion having a mounting surface; and a lateral wall portion having a top surface and including: a lateral wall having a rectangular outer shape in a top view and surrounding the mounting surface, and a stepped portion formed along the lateral wall below the top surface. In the top view, the stepped portion includes a wide portion and a narrow portion that are two regions having different widths. The narrow portion is formed on a portion along a one side of an entire circumference of the lateral wall.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A sintered body includes an aluminum oxide phase and crystal agglomerated particles containing a rare earth aluminate fluorescent material crystal phase, wherein the aluminum oxide phase is disposed around the crystal agglomerated particles. A method for producing a sintered body includes: providing a first mixture obtained by wet mixing raw materials and then drying; dry mixing the first mixture and aluminum oxide particles; molding a mixture obtained by dry mixing the first raw material mixture and the aluminum oxide particles; and calcining a molded body obtained by molding the mixture.
A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
40.
METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING LIGHT-EMITTING MODULE, LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING MODULE
A method of manufacturing a light-emitting device includes: preparing a light source, which includes: (a) preparing a structure including: a support substrate having a first upper face and including, on the first upper face, a plurality of first terminal parts disposed in the light-emitting part arrangement region, and one or more first wire-connection parts, and a plurality of light-emitting parts disposed in the light-emitting part arrangement region and electrically connected to the first terminal parts, each of the plurality of light-emitting parts having an emission face, (b) disposing a resin member on the first upper face between the light-emitting part arrangement region and the one or more first wire-connection parts in a top view, and (c) disposing a light-shielding member in contact with the resin member while the first wire-connection parts and the emission faces of the light-emitting parts are exposed from the light-shielding member in the top view.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/56 - Materials, e.g. epoxy or silicone resin
A planar light source includes a substrate, a reflective member having a plurality of openings and at least one slit, and a light source disposed in each of the openings. The plurality of openings are arranged in m rows along a first direction and in n columns along a second direction that intersects the first direction. The at least one slit includes at least one first slit arranged in a first region and intersecting a first virtual straight line at a prescribed position in the first region. The first virtual straight line is parallel to the first direction. The first region is located between one or more openings in a kth row (k is an integer equal to or greater than 1 and less than or equal to m−1) and one or more openings in a (k+1)th row and extends in the first direction.
A planar light source includes a first substrate including a first part and a second part; a light source located at an upper surface side of the first part; a light guide member located at the upper surface side of the first part; and a circuit member overlapping the light guide member in a direction parallel to an upper surface of the first part. The circuit member includes a second substrate located at an upper surface side or a lower surface side of the second part, and an electronic element located on the second substrate.
Provided is a positive-electrode active material for a nonaqueous electrolyte secondary battery, including a lithium transition metal composite oxide particle having a layered structure and containing nickel, and an oxide containing lithium and aluminum and an oxide containing lithium and boron adhering to a surface of the lithium transition metal composite oxide particle. The lithium transition metal composite oxide particle includes a secondary particle formed by aggregation of primary particles containing a solid solution of aluminum in a surface layer. The lithium transition metal composite oxide particles have a composition with a difference of more than 0.22 mol % and less than 0.6 mol % between a ratio of the number of moles of aluminum in the solid solution in the surface layer of the primary particles relative to a total number of moles of metal other than lithium and a ratio of the number of moles of aluminum present in a region other than the surface layer of the primary particles relative to the total number of moles of metal other than lithium.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
A light-emitting element includes: a semiconductor stack including: a first light-emitting unit comprising nitride semiconductors including a first n-side semiconductor layer, a first p-side semiconductor layer, and a first active layer disposed between the first n-side semiconductor layer and the first p-side semiconductor layer, a second light-emitting unit comprising nitride semiconductors including a second n-side semiconductor layer, a second p-side semiconductor layer, and a second active layer disposed between the second n-side semiconductor layer and the second p-side semiconductor layer, and a tunnel junction layer disposed between the first p-side semiconductor layer and the second n-side semiconductor layer; an n-side electrode electrically connected to the first n-side semiconductor layer; and a p-side electrode electrically connected to the second p-side semiconductor layer.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A planar light-emitting device includes a plurality of light-emitting elements arranged at same intervals in a planar configuration, and a wavelength conversion member located above the plurality of light-emitting elements. The plurality of light-emitting elements is configured to emit blue light. The wavelength conversion member contains a phosphor that emits light when being excited by light emitted from the light-emitting elements. The plurality of light-emitting elements includes a first light-emitting element located in an outer perimeter region in a plan view, and a second light-emitting element located in a central region in the plan view. The central region is positioned inward of the outer perimeter region in the plan view. A peak wavelength of light emitted from the first light-emitting element is less than a peak wavelength of light emitted from the second light-emitting element.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
46.
LIGHTING APPLIANCE TUBULAR BODY AND PORTABLE LIGHTING APPLIANCE
A lighting appliance tubular body includes a first tubular body and a second tubular body. The first tubular body including a first member, a second member, and a first connecting portion on one opening side. The second tubular body including a first holding portion that holds the first connecting portion. The first member includes a first lateral wall portion that is configured to cover part of a circuit board accommodated inside, and a first divided connecting portion continuous with the first lateral wall portion and part of the first connecting portion. The second member includes a base on which a light source is placed, a second lateral wall portion that is continuous from the base to form the lateral wall and covers part of the circuit board, and a second divided connecting portion that is continuous with the second lateral wall portion and is part of the first connecting portion.
A light-emitting device includes first and second light-emitting elements, an optical member, and a wavelength conversion member. The optical member includes an optical action layer configured to reflect or transmit light in accordance with a wavelength of the light. The optical action layer is configured to reflect first emission light emitted from the first light-emitting element and second emission light emitted from the second light-emitting element. The wavelength conversion member is configured to receive the first emission light reflected by the optical action layer of the optical member, to convert a wavelength of the first emission light, and to emit a wavelength-converted light having a converted wavelength. The optical action layer of the optical member is configured to transmit the wavelength-converted light. The optical member is arranged so that the wavelength-converted light and the second emission light are emitted from an upward-facing surface of the optical action layer.
A light source device includes: a plurality of light emitting parts arranged in a matrix, each having an upper surface that includes a light emitting surface, each of the light emitting parts being configured to emit light from the light emitting surfaces and at least one of the light emitting parts being configured to be individually turned on, wherein: each of the light emitting parts includes: a light emitting element, a wavelength conversion member covering the upper surface of the light emitting element, and a light-reflective member covering lateral surfaces of the light emitting element wavelength conversion member, and the light-reflective members of the light-emitting parts are directly adjacent to each other; and an optical lens located above the light emitting surfaces of the light emitting parts, the optical lens including: a first surface including a plurality of incident regions, and a second surface including a plurality of emission regions.
Provided is a light-emitting module capable of radiating light that is adjusted to a prescribed color. The light-emitting module comprises: a light source that includes a plurality of light emitting units which include a first light emitting unit that emits light having a first chromaticity and a second light emitting unit that emits light having a second chromaticity different from the first chromaticity, and each of which has a light emitting surface; a lens that transmits the light from the light source; a drive unit that can change the relative positions of the light source and the lens in a direction crossing the optical axis of the lens and/or the relative inclinations of the light emitting surfaces and the optical axis of the lens; and a control unit that is capable of controlling light emission of each of the plurality of light emitting units and operation of the drive unit, wherein the control unit performs control so as to cause the plurality of light emitting units to emit light during the operation for changing the relative positions and/or the relative inclinations by the drive unit, and so as to overlap, in an irradiated region, the positions of at least a portion of the light from the first light emitting unit that has passed through the lens prior to the operation and at least a portion of the light from the second light emitting unit that has passed through the lens after the operation.
H05B 45/34 - Voltage stabilisation; Maintaining constant voltage
H05B 45/345 - Current stabilisation; Maintaining constant current
H05B 47/155 - Coordinated control of two or more light sources
H05B 47/16 - Controlling the light source by timing means
F21Y 105/12 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
F21Y 113/10 - Combination of light sources of different colours
National University Corporation Tokai National Higher Education and Research System (Japan)
OSAKA UNIVERSITY (Japan)
NICHIA CORPORATION (Japan)
Inventor
Torimoto, Tsukasa
Kameyama, Tatsuya
Mori, Yuki
Yamauchi, Hiroki
Kuwabata, Susumu
Uematsu, Taro
Oyamatsu, Daisuke
Abstract
Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
B82Y 15/00 - Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
B82Y 40/00 - Manufacture or treatment of nanostructures
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
Alight source device includes a resonator having first and second mirrors, a gain medium disposed between the first and second mirrors and including a first semiconductor portion, an active layer, and a second semiconductor portion arranged in this order in a direction perpendicular to an optical axis of the resonator, and having first and second principal surfaces respectively located on sides of the first and second semiconductor portions opposite to sides on which the active layer is provided, a first heat dissipation member located on a first principal surface side of the gain medium, and a second heat dissipation member located on a second principal surface side of the gain medium. The resonator and the gain medium are arranged such that the optical axis passes through the gain medium.
A method of manufacturing an optical member includes forming a first layer on a light transmissive substrate by atomic layer deposition, converting a surface layer of the first layer into a boehmite layer, and forming a second layer by atomic layer deposition so as to cover the boehmite layer. The first layer includes aluminum oxide and has a first thickness. The second layer has a second thickness less than the first thickness.
A method of manufacturing wavelength converting members includes: disposing masks having a rectangular shape in plan view on an upper surface of a wavelength converting substrate; singulating the substrate into workpieces, each including an upper surface and lateral surfaces, with a predetermined size and a rectangular shape in plan view such that the upper surface includes one of the masks and a portion of the substrate; aligning a predetermined number of the workpieces and disposing a light-shielding film on the lateral surfaces and the upper surface of each workpiece, and on the mask of each workpiece; removing the masks with portions of the light-shielding film on the masks, while maintaining a portion of the light-shielding film on the upper surfaces of the workpieces at portions surrounding the masks; and reducing a thickness of a portion of each workpiece where the mask has been removed.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method of manufacturing a nitride semiconductor element includes: providing a first light emission part comprising a first n-side semiconductor layer, a first active layer formed on the first n-side semiconductor layer, and a first p-side semiconductor layer formed on the first active layer; forming a first layer such that the first layer contains an n-type impurity of a first concentration; forming a second layer such that the second layer contains an n-type impurity of a second concentration lower than the first concentration, wherein a thickness of the second layer is greater than a thickness of the first layer; and forming a second light emission part comprising: a second n-side semiconductor layer such that the second n-side semiconductor layer contains an n-type impurity of a third concentration lower than the first concentration and the second concentration, a second active layer, and a second p-side semiconductor layer.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
55.
METHOD OF PRODUCING RARE EARTH MAGNETIC POWDER AND RARE EARTH MAGNETIC POWDER
A method of producing a rare earth magnetic powder, the method including: heat-treating a mixture containing a SmFeN-based magnetic powder containing Sm, Fe, and N and a modifier powder containing Zn; and dispersing the heat-treated SmFeN-based magnetic powder using a resin-coated metal media or a resin-coated ceramic media.
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
56.
α-FE-CONTAINING RARE EARTH ELEMENT-IRON-NITROGEN MAGNETIC POWDER, MANUFACTURING METHOD FOR SAME, MAGNETIC MATERIAL FOR MAGNETIC FIELD AMPLIFICATION, AND MAGNETIC MATERIAL FOR ULTRA-HIGH FREQUENCY ABSORPTION
Provided is a magnetic powder excellent in high frequency characteristics with low iron loss and excellent efficiency even when a high frequency is applied. The present invention relates to an α-Fe-containing rare earth element-iron-nitrogen magnetic powder comprising: a core region including a rare earth element R (where R is at least one type selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm and if Sm is included, Sm is less than 50 atom% with respect to the R component as a whole), Fe, and N; and, on the outside of the core region, an α-Fe-containing region including α-Fe and at least one type selected from the group consisting of an oxide, a nitride, and an oxynitride of the rare earth element R.
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/24 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated
H01F 1/26 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated by macromolecular organic substances
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
57.
OXIDE FLUORESCENT MATERIAL, LIGHT EMITTING DEVICE, AND METHOD FOR PRODUCING OXIDE FLUORESCENT MATERIAL
Provided is an oxide fluorescent material having a light emission peak in a wavelength range from red light to near-infrared light.
Provided is an oxide fluorescent material having a light emission peak in a wavelength range from red light to near-infrared light.
The oxide fluorescent material has a composition including: a first element M1 being at least one element selected from the group consisting of Li, Na, K, Rb, and Cs; a second element M2 being at least one element selected from the group consisting of Ca, Sr, Mg, Ba, and Zn; Ge; O (oxygen); and Cr, the composition optionally including: a third element M3 being at least one element selected from the group consisting of Si, Ti, Zr, Sn, Hf, and Pb; and a fourth element M4 being at least one element selected from the group consisting of Eu, Ce, Tb, Pr, Nd, Sm, Yb, Ho, Er, Tm, Ni, and Mn. When the molar ratio of Ge, or the total molar ratio of the third element M3 and Ge in the case of comprising the third element M3, in 1 mol of the composition of the oxide fluorescent material is 6, the molar ratio of the first element M1 is 1.5 or more and 2.5 or less, the molar ratio of the second element M2 is 0.7 or more and 1.3 or less, the molar ratio of the third element M3 is 0 or more and 0.4 or less, the molar ratio of O (oxygen) is 12.9 or more and 15.1 or less, and the molar ratio of Cr is 0.2 or less. The oxide fluorescent material has a light emission peak wavelength of 700 nm or more and 1,050 nm or less in a light emission spectrum of the oxide fluorescent material.
C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
Provided are a method for manufacturing a phosphor ceramic that emits light when excited by excitation light, and a method for manufacturing a light-emitting device. The method for manufacturing a phosphor ceramic includes preparing a precursor that is either a molded body containing aluminum nitride or a sintered body containing aluminum nitride, and producing an aluminum nitride phosphor ceramic having a content of europium in a range from greater than 0.03 mass % to 1.5 mass % by bringing the precursor into contact with a gas containing europium.
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part has an uppermost face and includes a first stepped portion including a first upper face and a second stepped portion including a second upper face, wherein the first upper face and the second upper face are disposed below the uppermost face, wherein the first upper face and the second upper face are disposed inward of the uppermost face in a top view, and wherein a height of the first stepped portion from the bottom face is lower than a height of the second stepped portion from the bottom face; a semiconductor laser element disposed on the bottom face; and a light reflective member and/or an optical member disposed on the bottom face.
A light emitting device includes: a laser element; a case enclosing the laser element, the case including a light-transmissive region configured to allow light emitted from the laser element to transmit through the light-transmissive region; a first lens configured to collimate or converge light emitted from the laser element; and a second lens that is disposed in the case and spaced apart from the first lens, the second lens located in an optical path between the laser element and the first lens. The second lens is spaced apart from the light-transmissive region such that an open space is located in the case between the light-transmissive region and the second lens.
A light-emitting device includes: a substrate having a mounting surface; a semiconductor laser element supported by the mounting surface; a first mirror member supported by the mounting surface and having a first reflective surface oriented obliquely upward; a cover that has a facing surface facing the mounting surface of the substrate, has an upper surface positioned on a side opposite to the facing surface, and is positioned above the semiconductor laser element and the first mirror member; and a second mirror member supported by the upper surface of the cover and having a second reflective surface. The first reflective surface reflects a laser beam to change a traveling direction of the laser beam to a direction away from the mounting surface of the substrate. The cover transmits the laser beam reflected by the first reflective surface. The second reflective surface reflects the laser beam reflected by the first reflective surface.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A semiconductor laser element includes a substrate, and a semiconductor layer portion disposed on the substrate and including a waveguide including an active layer. The waveguide includes a wide portion including a first diffraction grating, and a narrow portion that has a narrower waveguide width than the wide portion and through which light generated in the active layer propagates in a transverse multimode. The waveguide includes a first end surface including an end surface of the narrow portion, and a second end surface located on a side opposite to the first end surface. The wide portion is continuously connected to the narrow portion, and includes a first region having a waveguide width increasing from the first end surface side toward the second end surface side.
A light-emitting device includes a light-emitting element, a substrate supporting the light-emitting element, and one or more lateral wall portions joined to the substrate to surround the light-emitting element. The one or more lateral wall portions includes a first lateral wall portion having a light incident surface configured to receive a light emitted from the light-emitting element and traveling in a first direction and a light exit surface configured to emit the light. The substrate has a joint surface joined to the first lateral wall portion and a lateral surface meeting the joint surface. The lateral surface is located between the light incident surface and the light exit surface in a top view as viewed in a direction perpendicular to the joint surface.
A light emitting module includes a substrate; at least one light emitting device each including: at least one light emitting element each including: a semiconductor layered structure having a lower surface, an upper surface, and lateral surfaces, and electrodes on the lower surface of the semiconductor layered structure; a light-reflecting part having a lower surface and covering at least the lateral surfaces and the lower surface of the semiconductor layered structure, at least one recessed portion being formed in the lower surface of the light-reflecting part; and a light-transmitting part located over the light-reflecting part and covering an upper surface side of the semiconductor layered structure; an electrically conductive bonding member configured to bond the substrate and the electrodes of each of the at least one light emitting device; and a covering resin spaced apart from the light-transmitting part and disposed at least in the at least one recessed portion and around at least one of the at least one light emitting device.
A light source device includes: a plurality of independently operable light emitting devices; a first lens having a lower face that faces the light emitting devices, and an upper face opposite the lower face. The lower face of the first lens includes: an entrance part located in a center of the lower face where light from the light emitting devices enters, and a light guide part located outward of the entrance part and configured to guide the light entering the entrance part. The upper face of the first lens comprises a plurality of annular protruding portions.
A light emitting device includes: a base member including a mounting surface, a first light-emitting element that is disposed on the mounting surface and emits light passing along a first optical axis, a second light-emitting element that is disposed on the mounting surface and emits light passing along a second optical axis, a third light-emitting element that is disposed on the mounting surface and emits light passing along a third optical axis, and one or more light reflective members including a first light reflective surface that includes a first position to be irradiated with the light passing along the first optical axis, a second light reflective surface that includes a second position to be irradiated with the light passing along the second optical axis and, and a third light reflective surface that includes a third position to be irradiated with the light passing along the third optical axis.
A light-emitting device includes first and second semiconductor laser elements configured to respectively emit first and second lights, first and second light reflecting members each having at least four light reflecting surfaces, and a wavelength conversion member including an incident surface on which the reflected first light and the reflected second light are incident. Light intensity distributions in the fast axis direction of the first and second lights on the incident surface are more uniform than light intensity distributions in a fast axis direction of a far-field pattern of each of the first and second semiconductor laser elements. In a state in which the first and second lights are combined on the incident surface, 93% or more of a sum of light outputs of the first and second lights is emitted to a region of a 0.5 mm square on the incident surface.
Provided is an electrode active material for a fluoride ion battery. The electrode active material for a fluoride ion battery includes a complex oxide that comprises a melilite-type crystal structure. The complex oxide includes: a first metal atom that comprises at least one type selected from a first metal atom group; a second metal atom that comprises at least one type selected from a second metal atom group; a specific non-metal atom that comprises at least one type selected from a specific non-metal atom group; and at least an oxygen atom as the specific non-metal atom. The first metal atom group includes Li, Be, Na, Mg, K, Ca, Rb, Sr, Y, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Bi. The second metal atom group includes Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Sn, Hf, Ta, W, Re, Os, Ir, Pt, and Au. The specific non-metal atom group includes O, F, N, S, and Cl.
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 10/054 - Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
69.
CYLINDRICAL MULTIPOLE MAGNET AND COMPOSITE MATERIAL
A cylindrical multipole magnet having an inner peripheral surface and an outer peripheral surface and having N- and S-poles alternately and continuously in a circumferential direction. A surface magnetic flux density of the outer peripheral surface is at least 0.2 times a surface magnetic flux density of the inner peripheral surface. The cylindrical multipole magnet contains an anisotropic rare earth magnetic powder and a resin, with a filling ratio of the anisotropic rare earth magnetic powder being at least 50 vol % but not higher than 65 vol % with respect to a total volume of the anisotropic rare earth magnetic powder and the resin.
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
This light emitting device 1000A comprises: a base 100; at least one first light emitting element 51 that is disposed on the base and emits light from an upper surface and a side surface thereof; a reflective member 153 disposed around the at least one first light emitting element 51; and a lens 73 that overlaps the at least one first light emitting element 51 in a top view, wherein the shape of the lens 73 in the top view is an elliptical shape having a major axis LA3 in an x direction and a minor axis SA3 in a y direction orthogonal to the x direction, and when seen from above, in the reflective member 153 overlapping the lens 73, has a surface area of a section of the reflective member present on the -y direction side of the major axis LA3 is greater than a surface area of a section of the reflective member present on the +y direction side of the major axis LA3.
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
G09F 9/40 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character is selected from a number of characters arranged one beside the other, e.g. on a common carrier plate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A light-emitting module includes: a support base having a plurality of placement surfaces arranged in a first direction; a plurality of semiconductor laser elements disposed on respective ones of the plurality of placement surfaces, each semiconductor laser element configured to emit laser beams; a plurality of first mirror members, each having a first reflective surface configured to reflect and change a traveling direction of the laser beams from a respective one of the semiconductor laser elements; and a plurality of second mirror members, each having a second reflective surface, at least a portion of the second reflective surface being positioned above at least a portion of a respective one of the first reflective surfaces, and the second reflective surface being configured to reflect, in a second direction intersecting the first direction, the laser beams reflected by the respective first reflective surface.
A light source includes a plurality of light emitting elements, a light blocking member, and a plurality of light-transmissive members. The light emitting elements are arranged in a matrix to form a rectangular shape as a whole in a plan view. The light blocking member covers lateral surfaces of the light emitting elements with an upper surface of each of the light emitting elements being exposed from the light blocking member. The light-transmissive members arranged in a matrix to form a rectangular shape as a whole in the plan view. The light-transmissive members include a plurality of first light-transmissive members respectively disposed on the light emitting elements, and a plurality of second light-transmissive members disposed on the light blocking member in an outer periphery region located outwardly of the light emitting elements in the plan view.
F21K 9/66 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction - Details of globes or covers forming part of the light source
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
This light-emitting module comprises: a support substrate having a plurality of placement surfaces arranged side by side in a first direction; a plurality of light-emitting devices, the corresponding light-emitting devices being disposed on the respective placement surfaces, and each including a semiconductor laser element, a first mirror member, a cover, and a second mirror member; a plurality of third mirror members; and a light condensing lens. The first mirror member changes the traveling direction of laser light emitted from the semiconductor laser element, the cover transmits the laser light having the changed traveling direction, the second mirror member further changes the traveling direction of the laser light transmitted through the cover to a second direction, and each third mirror member changes the traveling direction of the laser light from the second direction to the first direction. The light condensing lens couples a plurality of laser light beams to optical fibers.
A manufacturing method of a light-emitting device includes: providing a light source comprising: a plurality of light-emitting units, a support substrate comprising, on a first upper surface: a plurality of first terminal portions electrically connected with respective ones of the light-emitting units, each comprising a plurality of terminals, and one or more first wire-connecting portions, and a light-reflective member covering the plurality of light-emitting units and comprising a recess in which one or more first wire-connecting portions are exposed from the light-reflective member; providing a control unit comprising, on a second upper surface: a first region where the light source is to be disposed, and one or more second wire-connecting portions disposed in a second region other than the first region; disposing the light source in the first region; and connecting the first and second wire-connecting portions with a first wire.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
75.
WIRING SUBSTRATE, LIGHT-EMITTING DEVICE, AND MANUFACTURING METHODS THEREOF
A wiring substrate includes: a base body having an insulating property and including a first surface and a second surface on a side opposite the first surface; a resist portion covering at least part of the first surface and at least a part of the second surface of the base body and including a hole portion having a predetermined pattern; and a wiring line disposed in the hole portion of the resist portion so as to be in contact with the base body. In a cross-sectional view in a thickness direction of the base body, a length of an exposed surface of the wiring line exposed from the resist portion is less than a length of a contact surface of the wiring line in contact with the base body.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
76.
PLURALITY OF LIGHT-EMITTING DEVICES, AND LIGHT-EMITTING MODULE
A plurality of light emitting devices include first and second light-emitting devices. The first light-emitting device includes: a first package, first semiconductor laser elements sealed in the first package, and a first lens member having lens surfaces. The second light-emitting device includes a second package having a same outer shape as the first package, one or more second semiconductor laser elements sealed in the second package, and a second lens member having one or more lens surfaces. The first semiconductor laser elements include a semiconductor laser element to emit first light having a color different from light emitted from any of the second semiconductor laser elements. A curvature of the lens surface of the first lens member to transmit the first light is the same as a curvature of one of the lens surfaces of the second lens member.
A light source device includes a substrate and a light source. The light source includes a first light emission unit, a plurality of second light emission units, and a plurality of third light emission units arranged two-dimensionally on the substrate. The first light emission unit is arranged at a center among the light emission units, and includes a first light emission element having a first light emission face. The second light emission units surround the first light emission unit, and include a plurality of second light emission elements, respectively, each having a second light emission face. The third light emission units surround the second light emission units, and include a plurality of third light emission elements, respectively, each having a third light emission faces. The first light emission face and the second light emission faces all have the same areas. The third light emission faces have different areas.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
A light-emitting device includes a light-emitting element, a light-transmissive member, and a light adjustment member. The light adjustment member exposes a first upper surface and covers a second upper surface and a first lateral surface of the light-transmissive member. The light-transmissive member has a thickness from a lower surface to the first upper surface larger than a thickness from the lower surface to the second upper surface. In a plan view, first and second light-emitting regions have the first and second upper surfaces of the light-transmissive member, respectively, and an area of the second light-emitting region is in a range from 35% to 95% of an area of a light-emitting region. A boundary between the first and second light-emitting regions includes first and second points on a perimeter of a light-emitting region, and a straight line connecting the first and second points extends across the light-emitting region.
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21S 41/176 - Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
F21K 9/68 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction - Details of reflectors forming part of the light source
79.
IMAGE DISPLAY DEVICE AND METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE
A method for manufacturing an image display device according to an embodiment includes: preparing a first substrate, the first substrate including a circuit element, a first wiring layer connected to the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a conductive layer including a single-crystal metal on the first insulating film; forming a semiconductor layer including a light-emitting layer on the single-crystal metal; forming a light-emitting element including a light-emitting surface by patterning the semiconductor layer; forming a second insulating film covering the first insulating film, the conductive layer, and the light-emitting element; forming a first via extending through the first and second insulating films; forming a second wiring layer on the second insulating film; and removing at least a portion of the conductive layer on the light-emitting surface.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A light source device includes a substrate, a light source, a liquid crystal shutter, and a lens. The light source is supported by the substrate. The light source includes a plurality of light emission units two-dimensionally arranged. The liquid crystal shutter is disposed on the light source. The lens is disposed on the liquid crystal shutter. The liquid crystal shutter is configured to perform independent ON/OFF control in two or more regions corresponding to at least one of the light emission units.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
A method for manufacturing a light-emitting element includes forming a first n-layer made of a nitride semiconductor layer above a first substrate using a first source gas including an Al source gas, a Ga source gas, and a Ge source gas. The method further includes forming a second n-layer made of a nitride semiconductor layer above the first n-layer using a second source gas including an Al source gas, a Ga source gas, and a Si source gas, exposing the second n-layer by removing the first substrate and the first n-layer, and forming an n-electrode on the second n-layer exposed in the exposing of the second n-layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
82.
POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION SECONDARY BATTERY AND METHOD OF MANUFACTURING THE POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION SECONDARY BATTERY
A method of manufacturing a positive electrode material for a lithium ion secondary battery includes: firing a mixture containing a lithium compound, a nickel-containing complex compound, and a molybdenum compound, to obtain first particles containing a lithium transition metal complex oxide having a composition in which a ratio of a number of moles of nickel to a total number of moles of metals other than lithium is greater than 0.6 and less than 1; and bringing the first particles into contact with a liquid medium in such that a solid content concentration of the first particles is in a range of 20 mass % to 80 mass % to remove a part of molybdenum element contained in the first particles to obtain second particles.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
A positive electrode active material for a nonaqueous electrolyte secondary battery includes particles of a lithium-transition metal composite oxide that contains nickel in the composition thereof and has a layered structure. The particles have an average particle size DSEM based on electron microscopic observation in a range of 1 μm to 7 μm in which a ratio D50/DSEM of a 50% particle size D50 in volume-based cumulative particle size distribution to the average particle size based on electron microscopic observation is in a range of 1 to 4, and a ratio D90/D10 of a 90% particle size D90 to a 10% particle size D10 in volume-based cumulative particle size distribution is 4 or less.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
84.
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE
A light-emitting device includes a base member, a frame member and a light-emitting element. The frame member is fixed to the base member and has one or more inner lateral surfaces and one or more outer lateral surfaces. The frame member includes a first part containing a wavelength conversion material and defining one part of the one or more inner lateral surfaces and one part of the one or more outer lateral surfaces, and a second part connected with the first part and defining another part of the one or more inner lateral surfaces and another part of the one or more outer lateral surfaces. The light emitting element has a light-emitting surface, and is configured to emit, from the light-emitting surface, light to be incident on the one part of the one or more inner lateral surfaces defined by the first part of the frame member.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
85.
METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
A method for manufacturing a light-emitting device includes providing a light-emitting element having element electrodes including a positive element electrode and a negative element electrode, a wiring substrate having wiring layers, and conductive members each electrically connecting one of the element electrodes and a corresponding one of the wiring layers, with at least one member of the element electrodes, the wiring layers, or the conductive members containing Au; arranging, between a lower surface of the light-emitting element and the wiring substrate, a resin composition in a liquid state; oxidizing a component B in the resin composition in contact with the at least one member containing Au; and after the oxidizing of the component B, heating and curing the resin composition not in contact with the at least one member containing Au.
A method for manufacturing an image display device according to an embodiment includes: preparing a first substrate that includes a circuit element formed on a first surface of a substrate, a first wiring layer connected to the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a graphene-including layer on the first insulating film; forming a semiconductor layer that includes a light-emitting layer on the graphene-including layer; forming a light-emitting element that includes a light-emitting surface on the graphene-including layer and includes a top surface at a side opposite to the light-emitting surface by patterning the semiconductor layer; forming a second insulating film covering the first insulating film, the graphene-including layer, and the light-emitting element; forming a first via extending through the first and second insulating films; and forming a second wiring layer on the second insulating film.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
87.
WAVELENGTH CONVERSION MEMBER AND WAVELENGTH CONVERSION MEMBER MANUFACTURING METHOD
Provided are a wavelength conversion member with which it is possible to suppress a decrease in wavelength conversion efficiency, and a wavelength conversion member manufacturing method. The wavelength conversion member comprises a layered body which includes: a first barrier layer having a first main surface, a second main surface positioned opposite the first main surface, and an end surface connected to the first main surface; a wavelength conversion layer that has a third main surface and a fourth main surface positioned opposite the third main surface, and which is disposed on the first barrier layer with the third main surface and the second main surface of the first barrier layer facing each other, the wavelength conversion layer including quantum dots; and a second barrier layer that includes a fifth main surface and a sixth main surface positioned opposite the fifth main surface, and which is disposed on the wavelength conversion layer with the fifth main surface and the fourth main surface of the wavelength conversion layer facing each other. The wavelength conversion layer is positioned on the inside of the end surface in one cross section intersecting the third main surface and taken through the end surface, and has a first side surface connecting the third main surface and the fourth main surface. The first side surface is coated with a coating film.
The present invention relates to a method of producing a composite component, the method including: preparing a second composite by fitting a first molded body onto a first composite including a rare earth magnet and a component contacting the rare earth magnet, such that the first molded body covers at least the entire surface of the first composite corresponding to the rare earth magnet; and forming a second molded body by inserting the second composite into a mold and injection-molding a thermoplastic resin such that the thermoplastic resin covers at least the entire surface of the first composite not covered by the first molded body and also contacts the first molded body.
H01F 1/053 - Alloys characterised by their composition containing rare earth metals
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
89.
METHOD OF MANUFACTURING PATTERNED BASE MEMBER, PROCESSING METHOD, AND METHOD OF MANUFACTURING LASER ELEMENT
A method of manufacturing a patterned base member includes forming a resist layer including a positive resist on a base member, exposing a portion of the resist layer to an electron beam to form an exposed portion and an unexposed portion in the resist layer, developing the resist layer to remove the exposed portion and leave the unexposed portion to provide a patterned resist layer, irradiating an entirety of the patterned resist layer with an electron beam, and etching the base member using the patterned resist layer as an etching mask or using a patterned mask layer, to which a pattern of the patterned resist layer is transferred, as an etching mask.
A method for manufacturing an image display device includes: forming, on a substrate, a layer including a first part made of a single-crystal metal; forming a semiconductor layer on the first part, the semiconductor layer including a light-emitting layer; forming a light-emitting element including: a light-emitting surface on the first part, and an upper surface opposite the light-emitting surface; forming a first insulating film that covers the substrate, the layer that comprises the first part, and the light-emitting element; forming a circuit element on the first insulating film; forming a light-shielding member between the circuit element and the light-emitting element; forming a second insulating film covering the first insulating film and the circuit element; forming a first via extending through the first and second insulating films; forming a wiring layer on the second insulating film; removing the substrate; and removing a portion of the first part on the light-emitting surface.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
A method for manufacturing an image display device according to an embodiment includes: forming a graphene layer on a first surface of a substrate; forming a semiconductor layer on the graphene layer; forming a light-emitting element that includes a light-emitting surface on the graphene layer and an upper surface at a side opposite to the light-emitting surface by patterning the semiconductor layer; forming a first insulating film covering the first surface, the graphene layer, and the light-emitting element; forming a circuit element on the first insulating film; forming a second insulating film covering the first insulating film and the circuit element; forming a first via extending through the first and second insulating films; and forming a first wiring layer on the second insulating film. The first via is located between, and electrically connects, the first wiring layer and the upper surface.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A light-emitting device includes: a light-emitting element; a package in which the light-emitting element is arranged; an optical member fixed to the package, the optical member having a lens portion having a lens surface including a first lens, and a non-lens portion that is a portion that does not overlap the lens surface in a top view; and one or more adhesives fixing the optical member to the package. The package has an emission surface through which light from the light-emitting element exits the package. The optical member has an incidence surface on which the light exiting the package enters the optical member, and the lens surface from which the light that has entered the optical member exits the optical member.
A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.
A method of manufacturing a light emitting device comprises: providing a structure body including a substrate and a plurality of semiconductor parts arranged on the substrate, wherein the semiconductor parts individually includes a first semiconductor layer, a second semiconductor layer, a first terminal and a second terminal; disposing an insulating member that covers the semiconductor parts; forming wirings at locations above the semiconductor parts, wherein, the wirings each connect the first terminal and the second terminal of two adjacent semiconductor parts in a direction of arrangement, the wirings serially connect the semiconductor parts, and an area of individual of the wirings is larger than an area of the first terminal or an area of the second terminal in a top view; evaluating electrical properties of the semiconductor parts connected by the wirings by bringing a testing device into contact with the wiring; and removing the insulating member and the wirings.
A shortest distance between a first p-side electrode and a second p-side connection portion is greater than a shortest distance between the first p-side electrode and a closest one of first n-side connection portions most proximate to the first p-side electrode among a plurality of first n-side connection portions in the plan view. The second p-side electrode is located at least in a region between the first p-side electrode and the closest one of the first n-side connection portions in the plan view.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
96.
POSITIVE-ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERIES, METHOD FOR MANUFACTURING SAME, POSITIVE ELECTRODE FOR SECONDARY BATTERIES USING SAME, AND SECONDARY BATTERY
Provided is a method for manufacturing a positive-electrode active material for secondary batteries, said method being capable of configuring a battery with improved battery resistance. This method for manufacturing a positive-electrode active material for secondary batteries comprises: preparing lithium transition metal composite powder that has a layered structure, in which the ratio of the molar number of nickel atoms with respect to the total molar number of metal atoms other than lithium is 0.5 inclusive to 1 exclusive, and in which the ratio of the molar number of cobalt atoms with respect to the total molar number of metal atoms other than lithium is 0 inclusive to 0.5 exclusive; obtaining a cobalt-adhered complex oxide by bringing the lithium transition metal composite powder into contact with a cobalt raw material; obtaining a first heat-treated object by subjecting the cobalt-adhered complex oxide to first heat treatment at a temperature from 600°C to 800°C exclusive; obtaining a niobium-adhered complex oxide by bringing the first heat-treated object into contact with a niobium raw material; and obtaining a second heat-treated object by subjecting the niobium-adhered complex oxide to second heat treatment at a temperature from 300°C to 500°C exclusive.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
A method for producing a phosphate-coated SmFeN-based anisotropic magnetic powder, the method includes a phosphate treatment of adding an inorganic acid to a slurry containing an SmFeN-based anisotropic magnetic powder, water, and a phosphate compound to adjust a pH of the slurry to a range of 1 to 4.5 to form a phosphate-coated SmFeN-based anisotropic magnetic powder having a surface coated with a phosphate.
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
98.
PRODUCTION METHOD FOR PHOSPHATE-COATED SmFeN-BASED ANISOTROPIC MAGNETIC POWDER, AND BONDED MAGNET
A method for producing a phosphate-coated SmFeN-based anisotropic magnetic powder, the method includes: a phosphate treatment of adding an inorganic acid to a slurry containing an SmFeN-based anisotropic magnetic powder, water, and a phosphate compound to adjust a pH of the slurry to a range from 1 to 4.5 to form an SmFeN-based anisotropic magnetic powder having a surface on which a phosphate coating is formed; and oxidizing by heat treating the SmFeN-based anisotropic magnetic powder having the surface on which the phosphate coating is formed, in an oxygen-containing atmosphere at a temperature in a range of 200° C. to 330° C., to form the phosphate-coated SmFeN-based anisotropic magnetic powder.
B22F 1/16 - Metallic particles coated with a non-metal
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 1/055 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 1/142 - Thermal or thermo-mechanical treatment
B22F 1/103 - Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 9/20 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from solid metal compounds
B22F 3/20 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor by extruding
B22F 3/22 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor for producing castings from a slip
A method of manufacturing a wiring substrate includes providing a conductive paste including metal nanoparticles, metal particles, and a resin, disposing the conductive paste on at least a first surface of an insulating base body, and forming a wiring layer by heating and pressurizing the conductive paste by using a roll press or a hard SUS plate. In the providing the conductive paste, the ratio of a mass of the metal nanoparticles to the total mass of the metal nanoparticles and the metal particles is in a range of 5 mass % to 95 mass %, and the conductive paste is heated and pressurized such that part of the wiring layer in a thickness direction is embedded in at least the first surface of the insulating base body.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A method for manufacturing a light-emitting device includes: preparing a first structure comprising: a first substrate having a first surface and a second surface on a side opposite the first surface, a release layer disposed on the first surface, and one or more light-emitting elements fixed to the first surface of the first substrate via the release layer, the one or more light-emitting elements each having a third surface facing the release layer and a fourth surface on a side opposite the third surface, the fourth surface being larger than the third surface in a plan view, wherein: the release layer encloses the fourth surface in the plan view; preparing a second structure comprising a second substrate having an upper surface; and transferring the one or more light-emitting elements from the first substrate to the second substrate by removing the release layer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
