A bearing system (200) for supporting a first component (202) on a second component (204) of a lithography system (100A, 100B) has an adhesive (212, 212′) which secures the first and second component (202, 204) against each other. The first component (202) has at least two surfaces (216) inclined towards each other and a first adhesive surface (218) which connects the two surfaces (216), and the second component (204) has at least one ball section (220) which is received between the at least two mutually inclined surfaces (216). The ball section includes a ball surface section (226) and a second adhesive surface (230), which is arranged between two sub-sections (232, 234) of the ball surface section (226) when viewed in cross-section, and the adhesive (212, 212′) is arranged between the first and the second adhesive surface (218, 230).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
2.
METHOD TO OBTAIN INFORMATION TO CONTROL A MANUFACTURING PROCESS FOR A STACKED SEMICONDUCTOR DEVICE AND DETECTION SYSTEM USING SUCH METHOD
In a method to obtain information to control a manufacturing process for a stacked semiconductor device including several semiconductor layers requiring electrically interconnection, sample data of a semiconductor device sample to be inspected are provided. An X-ray imaging scan of the sample obtaining respective X-ray imaging data is performed. Sample detail information of sample details of the sample are gathered from the X-ray imaging data which are vital for the manufacturing process. Multiple Regions of Interest (ROIs) are identified from the gathered sample detail information by processing data resulting from an ROI identification model (22), such ROI identification model (22) being previously trained in a machine learning process. Metrology data are extracted from the identified ROIs by processing data resulting from a metrology model (31), such metrology model (31) being previously trained in a machine learning process. With such method, a process time to obtain the required information to control the manufacturing process can be reduced.
Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method.
Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method.
A method for processing a surface of an object, in particular of a lithographic mask, includes the following steps: (a.) supplying a gas mixture containing at least a first gas and a second gas to a reaction site at the surface of the object; (b.) inducing a reaction, which includes at least a first partial reaction and a second partial reaction, at the reaction site by exposing the reaction site to a beam of energetic particles in a plurality of exposure intervals, wherein the first partial reaction is promoted primarily by the first gas and the second partial reaction is promoted primarily by the second gas, and wherein a gas refresh interval lies between the respective exposure intervals; (c.) setting a first time duration for the gas refresh interval, as a result of which the process rate of the first partial reaction and the process rate of the second partial reaction are present; (d.) setting a second time duration for the gas refresh interval, which brings about a relative increase in the process rate of the first partial reaction in comparison with the process rate of the second partial reaction.
METHOD AND DEVICE FOR THE POST-TREATMENT OF A FLUORIDE LAYER FOR AN OPTICAL SYSTEM FOR THE VUV WAVELENGTH RANGE, AND OPTICAL ELEMENT COMPRISING SAID FLUORIDE LAYER
The invention relates to a method for the post-treatment of a fluoride layer (1) for an optical element (2) for use in the VUV wavelength range, having the step of: irradiating the fluoride layer (1) with UV/VUV radiation (8) in the presence of an active fluorination compound (FW). The invention also relates to an optical element (2) comprising a fluoride layer (1) which is post-treated using the aforementioned method and to an optical assembly comprising at least one such optical element (2).
G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
G02B 1/18 - Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
5.
METHOD AND DEVICE FOR PRODUCING A FLUORIDIC PROTECTIVE COATING FOR A REFLECTIVE OPTICAL ELEMENT
The invention relates to a method for producing a fluoridic protective coating (11) for protecting a metallic reflection layer (12) of a reflective optical element (13) for the VUV wavelength range, comprising the step of: irradiating a native oxide layer (16) of the metallic reflection layer (12) with UV/VUV radiation (17) in the presence of a fluoridation agent (FW) for converting the native oxide layer (16) into a fluoride layer (18) of the fluoridic protective coating (11). The invention also relates to a reflective optical element (13) with a fluoridic protective coating (11) which has been produced by means of this method and also to an optical arrangement with at least one such reflective optical element (13).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
G02B 1/14 - Protective coatings, e.g. hard coatings
6.
MIRROR, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND METHOD OF PROCESSING A MIRROR
The invention relates to a mirror, in particular for a microlithographic projection exposure apparatus, and to a method of processing a mirror. In one aspect, the mirror has an optical effective surface (11, 21, 31), a mirror substrate (12, 22, 32), a reflection layer system (17, 27, 37) for reflecting electromagnetic radiation that is incident on the optical effective surface, at least one piezoelectric layer (14, 24, 34) which is arranged between mirror substrate and reflection layer system and to which an electric field for creating a locally variable deformation can be applied by way of a first electrode arrangement (15, 25, 35) situated on the side of the piezoelectric layer facing the reflection layer system, and by way of a second electrode arrangement (13, 23, 33) situated on the side of the piezoelectric layer facing the mirror substrate, and a layer (16, 26b, 36b) of amorphous material which is compaction-sensitive on exposure to low-energy electron beam radiation and which is arranged on the side of the piezoelectric layer facing the reflection layer system and has a thickness of at least 20 μm.
G02B 7/185 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors with means for adjusting the shape of the mirror surface
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
7.
METHOD AND DEVICE FOR FORMING A FLUORIDE OR OXYLFLUORIDE LAYER FOR AN OPTICAL ELEMENT FOR THE VUV WAVELENGTH RANGE, AND OPTICAL ELEMENT COMPRISING SAID FLUORIDE OR OXYLFLUORIDE LAYER
The invention relates to a method for forming a fluoride or oxylfluoride layer (1) for an optical element (2) for use in the VUV wavelength range, having the steps of: depositing an cxide layer (4) and converting the oxide layer (4) into the fluoride or oxylfluoride layer (1) by irradiating the oxide layer (4) with UV/VUV radiation (6) in the presence of an active fluorination compound (FW). The invention also relates to an optical assembly comprising at least one such optical element (2) and to a corresponding device for forming a fluoride or oxylfluoride layer (1) for an optical element (2) which is designed for use in the VUV wavelength range.
G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
G02B 1/18 - Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
8.
PROCESS FOR DEPOSITION OF AN OUTER LAYER, REFLECTIVE OPTICAL ELEMENT FOR THE EUV WAVELENGTH RANGE AND EUV LITHOGRAPHY SYSTEM
A method of depositing an outer layer (35) on a surface (36) of a reflective optical element (30) for the EUV wavelength range, wherein the depositing is effected in at least one macro cycle (37). The macro cycle (37) includes: at least partly depositing the outer layer (35) with an atomic layer deposition (ALD) process in at least one ALD cycle and partly back-etching the outer layer (35). Also disclosed is a reflective optical element (30) for the extreme ultraviolet (EUV) wavelength range which includes a surface (36) having an outer layer (35), wherein the outer layer (35) is deposited by the above-described method, and to an EUV lithography system having at least one such reflective optical element (30).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The invention relates to a mirror device, in particular for a microlithographic projection exposure system, comprising a mirror (20), a sensor unit (26) and a control unit (38). The mirror (20) comprises a mirror body (23) and a reflective surface (24) provided on the mirror body (23). The sensor unit (26) is designed to detect infrared radiation given off by the mirror body (23) in order to derive a temperature measurement value therefrom and to send the temperature measurement value to the control unit (38). The mirror (20) comprises a target (37) with an increased emissivity for infrared radiation. The invention also relates to a method for measuring the temperature of a mirror (20).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
The invention relates to an EUV reflectometer (EUVR) for measuring the reflectivity of a test object (PR) reflecting EUV radiation according to the wavelength of the EUV radiation and according to the incidence angle of the EUV radiation on a reflective surface (PRO) of the test object, comprising an EUV radiation source (SQ) with devices for generating a source spot for emitting EUV radiation, a beam-shaping unit (SFE) for receiving EUV radiation from the source spot and for generating a measuring beam (MS), a positioning apparatus (POS) for retaining the test object (PR) and for positioning the test object in relation to the measuring beam (MS) in multiple degrees of freedom, in such a way that, during operation, the measuring beam (MS) impinges on the reflective surface (PRO) at a predefinable incidence angle at a predefinable measuring point in the region of a measuring spot (MFL), as well as a detector (DET), sensitive to EUV radiation, for detecting the EUV radiation reflected by the reflective surface (PRO) and for generating detector signals that represent the EUV radiation reflected by the test object. The EUV reflectometer has a source position monitoring device (QPOS), which is independent of the EUV radiation source (SQ), for monitoring the spatial position of the source spot relative to the beam-shaping unit.
In a measuring method which uses an EUV reflectometer to measure the reflectivity of an EUV radiation-reflecting test object (PR) as a function of the wavelength of the EUV radiation and of the angle of incidence of the EUV radiation on a reflective surface (OB) of the test object, a measurement beam (STR) directed at the surface (OB) is generated using EUV radiation by virtue of a first partial system (TS1) which comprises a monochromator (MC) and is part of a beam shaping unit (SFE) being used to image an EUV radiation-emitting source spot (QF) on an exit gap (SP) of the monochromator and by virtue of a second partial system (TS2) of the beam shaping unit being used to image the exit gap on the surface (OB) of the test object (PR) in order to generate a measurement spot (MFL). In relation to the measurement beam (STR), the test object (PR) is positioned in multiple degrees of freedom such that, during operation, the measurement beam (STR) is incident on the reflective surface (OB) at a specifiable angle of incidence in the region of a measurement spot (MFL). A property of a beam reflected by the surface of the test object is detected by means of a detector (DET), with detector signals which represent the EUV radiation reflected by the test object being generated. These detector signals are evaluated in order to determine reflectivity measurement values. Within a beam direction control operation, the position of the measurement spot on the surface of the test object is altered by way of a controlled modification of a beam direction of the measurement beam (STR) by virtue of a reflective manipulator (MAN) being formed by a first mirror (S1) and, downstream thereof in the beam direction, at least one second mirror (S2) of the second partial system and by virtue of these mirrors being displaced in coordinated fashion with one another in at least one rigid body degree of freedom in response to control signals from the control unit.
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
G01M 11/00 - Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
12.
MIRROR DEVICE, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM, AND METHOD FOR MEASURING THE TEMPERATURE OF A MIRROR
The invention relates to a mirror device, in particular for a microlithographic projection exposure system, comprising a mirror (20), a sensor unit (41, 42, 44, 47, 49) and a control unit (38). The mirror (20) comprises a mirror body (23) and a reflective surface (24) provided on the mirror body (23). The sensor unit (41, 42, 44, 47, 49) comprises a sensor element (41, 49) and a signal path (50) extending to the control unit (38) in order to transmit a measurement signal representing the temperature of the sensor element (41, 49) to the control unit (38). The sensor element (41, 49) is provided in the substrate of the mirror body (23), the sensor element comprising a plurality of electrical conductor paths (41) integrated in the substrate of the mirror body (23), and the conductor paths (41) forming a plurality of crossing points (51), and the conductor paths (41) being electrically conductively connected to one another at the crossing points (51). The invention also relates to a method for measuring the temperature of a mirror (20).
A cooling device (200) for cooling a position-sensitive component (102) of a lithography system (1), comprising a cooling line (206) with a liquid chamber (218) for conducting a cooling liquid (112) to the position-sensitive component (102) and a gas chamber (220) for receiving a gas (222), and an elastic separating membrane (224) which is arranged inside the cooling line (206) and separates the gas chamber (220) from the liquid chamber (218).
A projection exposure apparatus for semiconductor lithography includes component having a fluid channel and a device for providing a fluid for flowing through the fluid channel. The fluid channel is connected to the device via a supply line and an outgoing line. The supply line and the outgoing line are connected to one another in parallel with the fluid channel via a short circuit.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
15.
OPTICAL ELEMENT FOR A PROJECTION EXPOSURE SYSTEM, OPTICAL SYSTEM COMPRISING SAME AND PROJECTION EXPOSURE SYSTEM COMPRISING THE OPTICAL ELEMENT AND/OR THE OPTICAL SYSTEM
The invention relates to an optical element (100, 200) for a projection exposure system (1), comprising a mirror body (104, 204), the mirror body (104, 204) having a mirror section (124, 224) with an optically active surface (102, 202) and a base section (106, 206) provided on the rear side of the mirror section (124, 224), and the base section (106, 206) having a greater stiffness in comparison to the mirror section (124, 224), multiple actuator linkages (128, 130, 132, 228, 230, 232) for linking actuators to the optical element (100, 200), the actuator linkages (128, 130, 132, 228, 230, 232) being provided on the base section (106, 206), and a reinforcing rib structure (156, 238) attached on the rear side of the mirror section (124, 224).
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
G02B 7/198 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors with means for adjusting the mirror relative to its support
16.
COMPUTER IMPLEMENTED METHOD FOR DEFECT DETECTION IN AN IMAGING DATASET OF A WAFER, CORRESPONDING COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM PRODUCT AND SYSTEMS MAKING USE OF SUCH METHODS
Computer implemented method (82) for defect detection comprising: obtaining an imaging dataset (28) of a wafer (24); verifying a defect criterion in a subset of the imaging dataset (28) of the wafer (24), the defect criterion comprising an observation representation (88) of the subset of the imaging dataset (28) with respect to a number of characteristic elements (90) derived from reference images (66) of semiconductor structures, wherein the observation representation and the characteristic elements (90) define a reconstruction of minimal reconstruction error, and a tolerance statistic (92) on defect-free representations (94) of subsets of defect-free observed imaging datasets (30) of wafers (24), wherein each of the defect-free representations and the characteristic elements (90) define a reconstruction of minimal reconstruction error of a subset of the defect-free imaging datasets (30); generating defect information.
The invention relates to a method for processing a body (20), in particular a mirror body of an EUV mirror, in which an ion beam (18) is directed to a surface (21) to be processed of the body (20) in order to remove material from the surface (21) of the body (20). The ion beam (18) is guided along a path (22, 23, 24, 25) over the surface (21), wherein the path (22, 23, 24, 25) comprises a first partial path (22) and a second partial path (23) temporally after the first partial path (22), wherein the ion beam (18) sweeps over the entire surface (21) during the first partial path (22) and wherein the ion beam sweeps over the entire surface (21) during the second partial path (23). The invention also relates to a device and a computer program product for processing a body.
The invention relates to a mirror device, in particular for a microlithographic projection illumination system, having a mirror (20), a sensor apparatus (37, 39, 46, 47) and a control unit (38). The mirror (20) comprises a mirror body (23) and a reflection surface (24) formed on the mirror body (23). The mirror body (23) is provided with cooling channels (27). The sensor apparatus (37, 39, 46, 47) comprises a sensor component (39, 46) thermally coupled to the mirror body (23), and a signal path (48) extending to the control unit (38) for transferring a measurement signal, representing the temperature of the coupling substance, to the control unit (38). The sensor component (39, 46, 48) is arranged in a cavity (27, 40) of the mirror body (23). The sensor component (39, 46) is arranged in a position between the cooling channels (27) and the reflection surface (24). The invention also relates to a method for measuring the temperature of a mirror (20).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
19.
ARRANGEMENT, METHOD AND COMPUTER PROGRAM PRODUCT FOR SYSTEM-INTEGRATED CALIBRATION OF A FACET MIRROR OF A MICROLITHOGRAPHIC ILLUMINATION SYSTEM
The invention relates to an arrangement (100), a method and a computer program product for system-integrated calibration of the facet mirrors (18, 19) of a microlithographic illumination system (20). Calibration beam paths (103, 104) leading via the facet mirrors (18, 19) between a calibration radiation source device (101) and a calibration radiation sensor device (102) are defined, only one pivotable micromirror (18') of the single facet mirror (18) constructed from micromirrors (18') being involved in each of said calibration beam paths. By means of pivoting the micromirror (18') involved in a defined calibration beam path (103, 104), a specific optimum pivot position, whose underlying orientation of the micromirror (18') can also be calculated geometrically, can be found on the basis of the calibration radiation sensor device (102). By means of comparing the calculated orientation with the orientation determined by an orientation sensor at the micromirror (18'), the orientation sensor of the micromirror (18') of the facet mirror (18) can be calibrated.
The invention relates to a device (1) for measuring and/or processing an object (7), in particular a scanning force microscope, comprising: a specimen slide (6) on which an object (7) can be arranged; a working head (9) associated with the specimen slide (6) for measuring or processing the object (7); and a frame (2) having a support element, in particular a table (3), which carries the specimen slide (6), and having an arm (4) which holds the working head (9). According to the invention, a plurality of individually actuatable and distributed clamping devices (12) are associated with the specimen slide (6), the clamping device (12) being designed to clamp, according a vibration behavior of the specimen slide (6), of the object (7) and/or of the working head (9), the specimen slide with a specified force for local reinforcement in order to bring about a local reinforcement of the specimen slide (6) which minimizes vibrations of the working head (9) and the object (7) in relation to one another.
The invention relates to a measuring device (400) for an optical system (300), comprising an input node (K1) for receiving a voltage (V2) dropping in the optical system (300); a capacitive voltage divider (410) which can be connected to the input node (K1) and which comprises a series circuit consisting of at least two capacitors (C1, C2), comprising a measuring capacitor (C2), wherein the capacitive voltage divider (410) is designed to provide a measurement voltage (V3) which drops at the measuring capacitor (C2), said measurement voltage being lower than and directly proportional to the voltage (V2) received at the input node (K1); and a controllable first switch (S1) which is coupled between the input node (K1) and the capacitive voltage divider (410) and which is designed to connect the capacitive voltage divider (410) to the input node (K1) on the basis of a control signal (SE1).
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G01R 15/06 - Voltage dividers having reactive components, e.g. capacitive transformer
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
22.
METHOD AND DEVICE FOR QUALIFYING A MASK OF A LITHOGRAPHY SYSTEM
A method for qualifying a mask for a lithography system, the mask having measurement points for detecting critical dimensions of the mask, comprising: first detection of critical dimensions of the mask at the measurement points, the first detection taking place sequentially and the duration of the first detection defining a measurement time period; determining reference measurement points from the measurement points, the number of reference measurement points being less than the number of measurement points; second detection of the at least one critical dimension of the mask at the reference measurement points; determining a deviation between the first and the second detected critical dimension at each of the reference measurement points; and applying a determined temporal profile of the correction factor to the at least one critical dimension to obtain a corrected critical dimension of the mask, and also a corresponding device for qualifying a mask for a lithography system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
23.
ASSEMBLY FOR ANNEALING AT LEAST A PORTION OF AN OPTICAL ELEMENT
The invention relates to an assembly for annealing at least a portion of an optical element (Mx, 117) for semiconductor lithography, the assembly comprising - an optical element (Mx, 117) having an optically active area (24), and - a device (30, 40, 50, 60, 70) for supplying a temperature-control fluid to at least portions of the optically active area (24). The device (30, 40, 50, 60, 70) comprises a means (31, 51, 61, 71) for producing a defined directed flow in the region of the optically active area (24).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
COMPUTER IMPLEMENTED METHOD FOR DEFECT RECOGNITION IN AN IMAGING DATASET OF A WAFER, CORRESPONDING COMPUTER READABLE-MEDIUM, COMPUTER PROGRAM PRODUCT AND SYSTEMS MAKING USE OF SUCH METHODS
The invention relates to a computer implemented method for defect recognition in an imaging dataset of a wafer in a charged particle beam system (78) comprising an embedded system (50), the method comprising: i) obtaining an imaging dataset of a wafer; ii) obtaining model data (44, 44', 44'') for a model architecture (42) of a machine learning model (40, 40', 40'') for defect recognition in the imaging dataset of the wafer, the model architecture (42) being implemented in the embedded system (50); iii) transferring the model data (44, 44', 44'') to a programmable memory (48, 48', 48'') of the embedded system (50); iv) applying the machine learning model (40, 40', 40'') to an imaging dataset of a wafer to recognize defects, comprising executing the embedded system implemented model architecture (46) with the transferred model data (44, 44', 44'').
An apparatus (61) for stress-reduced mounting of MEMS-based micromirrors (20) on a metallic support structure (60) comprises a plate (62) extending in a main plane of extent and a plurality of compensation elements (66) which are connected to the plate (62) and have connecting elements (75) which extend across the main plane of extent and a plurality of base elements (76), wherein a respective group with a plurality of connecting elements (75) is connected to a common base element (76), and wherein the apparatus (61) is produced using MEMS technology.
FACET MIRROR, ILLUMINATION OPTICAL UNIT, ARRANGEMENT OF A FACET MIRROR, PROJECTION EXPOSURE APPARATUS AND METHOD FOR PRODUCING A NANOSTRUCTURED COMPONENT
In a microlithographic projection exposure apparatus (1), the second facet mirror (14) of the illumination optical unit (4) is arranged in the region of the wafer plane (9), in particular below the wafer plane (9).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
27.
OPTICAL ASSEMBLY, OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS
The invention relates to an optical assembly (102) for a projection exposure apparatus (1), comprising an optical element (126) and a mount (128) carrying the optical element (126), wherein the mount (128) comprises a mount lower part (136) and a mount upper part (138) releasably connected to the mount lower part (136), wherein the optical element (126) is exclusively connected to the mount upper part (138), and wherein the mount upper part (138) comprises a plurality of spring-elastically deformable bearing feet (246) on which the optical element (126) bears.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
In a method for operating a projection exposure system (10) for microlithography, a mask (40) is repeatedly exposed with an exposure radiation (14) provided by an illumination system (20), and mask structures (42) are imaged on, in each case, one of a plurality of fields (64) of several semiconductor substrates (52). In a period in which the mask is repeatedly exposed, the illumination system is used successively in at least two different illumination settings (62a, 62b) of the illumination system, in which settings in a pupil plane (31) of the illumination system there are illumination distributions (60a, 60b) of the exposure radiation that differ such that a pupil surface (32-15, 32-30, 32-28, 32-22, 32-24, 32-5; 32-17, 32-30, 32-15, 32-28, 32-13, 32-3, 32-22, 32-5, 32-24, 32-7) illuminated in the first illumination setting (62a) has no overlap with a pupil surface (35- 16, 35-29, 35-14, 35-23, 35-4, 35-6; 32-17, 32-16, 32-29, 32-14, 32-13, 32-3, 32- 4, 32-23, 32-6, 32-7) illuminated in the second illumination setting (62b), or has an overlap of at most 90% of the illuminated pupil surface, wherein in each of the two different illumination settings, the pupil surface is completely exposed at least once.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
29.
OPTICAL APPARATUS, METHOD FOR SETTING A TARGET DEFORMATION, AND LITHOGRAPHY SYSTEM
An optical apparatus for a lithography system has at least one optical element comprising an optical surface. The optical apparatus also has one or more actuators for deforming the optical surface. The optical element comprises a strain gauge device for determining the deformation of the optical surface. The gauge device comprises: a) at least one path length device for generating a measurement spectrum of a measurement radiation, wherein the path length device comprises a grating device for the measurement radiation and/or a resonator device for the measurement radiation; and/or b) at least one waveguide, wherein the at least one waveguide and/or the at least one grating device and/or the at least one resonator device are formed by the substrate element.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
An imaging optical unit comprises a plurality of minors for imaging an object field into an image field. The imaging optical unit has an image-side numerical aperture greater than 0.55. Each mirror is configured so that it can be measured by a testing optical unit having at least one DOE with a predetermined maximum diameter for test wavefront generation. For the complete measurement of all reflection surfaces of the minors, a maximum number of DOEs of the testing optical unit and/or a maximum number of DOE test positions of the at least one DOE of the testing optical unit comes into play, which is no more than five times the number of minors in the imaging optical unit. The result is an imaging optical unit in which a testing-optical measurement remains manageable even in the case of a design with an image-side numerical aperture which is relatively large.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 17/06 - Catoptric systems, e.g. image erecting and reversing system using mirrors only
An analysis of the defects of a structured component includes a check of a local deviation between an actual structure dimension of the component and a target structure dimension of the component. In this context, the local deviation is checked at a location of a test path along a deviation coordinate which extends across the test path. The test is repeated at a plurality of different test path locations within a test region of the test path. A summed local deviation between the actual structure dimension and the target structure dimension over the test region is determined. The local deviation is compared with a local deviation tolerance value. The summed local deviation is compared with a summation deviation tolerance value. This results in a defect analysis with enhanced significance, which is implementable using a metrology system in particular.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
The invention relates to a device (100) for supporting one or more MEMS components (160), comprising a base component (110), which substantially consists of a first material with a first coefficient of expansion α1, an interposer (120), which is integrally bonded to the base component (110) in one or more first connection regions (140) and substantially consists of a second material with a second coefficient of expansion α2, and a support substrate (130), which is integrally bonded to the interposer (120) in one or more second connection regions (150) and substantially consists of a third material with a third coefficient of expansion α3, wherein the support substrate (130) is configured to support the one or more MEMS components (160), and for the coefficients of expansion the following holds true: α1>α2≥α3, preferably α1>α2=α3. The invention also relates to a system (105) comprising a device (100) according to the invention and the one or more MEMS components (160), and to a method for producing a device (100) according to the invention.
The invention relates to an assembly of an optical system, comprising at least one mirror with a mirror main body (200, 300), in which there is a fluid channel arrangement with at least one fluid channel (206, 306) through which a fluid can flow, wherein the fluid channel arrangement is coupled to a fluid line system via a detachable flange connection, wherein said flange connection comprises a flange interface (202, 302) formed on the mirror main body and a flange (203, 303) force-lockingly mounted on said flange interface (202, 302), wherein a seal (207, 307) is formed between the flange (203, 303) and the flange interface (202, 302) in order to provide a differential vacuum.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
34.
HOLDING DEVICE FOR AN OPTICAL COMPONENT HAVING AN OPTICAL SURFACE WITH A POLYGONAL BORDER AND HAVING A CYLINDRICAL SUBSTRATE BODY
A holding device (61) serves for holding an optical component (62) having an optical surface with a polygonal border and having a cylindrical substrate body (38) with a cylinder lateral wall (39) with a polygonal cross section corresponding to the border of the optical surface. The holding device (61) has a holding frame (64). At least two bearing bodies (66 to 68) of the holding device (61) serve to make bearing contact with the lateral wall (39) of the substrate body (38) by way of bearing portions (69 to 71) of the lateral wall (39). At least one pressing body (63) of the holding device (61) serves to exert a bearing pressure (FD), which presses the substrate body (38) against the bearing body (66 to 68). The result is a holding device which securely holds optical components having an optical surface with a polygonal border and having a cylindrical substrate body and moreover enables positionally accurate mounting.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
The invention relates to a guide arrangement for guiding a first and a second component (108.8, 108.2) of an imaging device with a first and second guide unit (109.1, 109.2), which function kinematically parallel to one another between the first and the second component in the manner of a parallel guide along a parallel guide device. During operation there is a maximum parallel guide deflection between the first and the second component. At least the first guide unit (109.1) has a four-joint device (109.5) and an intermediate element (109.6) which function kinematically serially to one another between the first and the second component. During operation, a first and a second joint (109.7, 109.8) act on the first component, while a third and a fourth joint (109.9, 109.10) act on the intermediate element, and therefore the four-joint device defines a centre of revolution of the first component with respect to the intermediate element. The intermediate element is articulated on the second component by means of a fifth joint (109.11). The arrangement of the joints is coordinated such that a deflection of the centre of revolution with respect to a first reference plane, which extends perpendicularly to the parallel guide device and through the fifth joint, is at most 0% to 5% of a first distance between the centre of revolution and the fifth joint, which is parallel to the first reference plane in a non-deflected starting state.
G02B 7/198 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors with means for adjusting the mirror relative to its support
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The invention relates to a mirror device for a microlithographic projection exposure system (10, 22), comprising a frame structure (29) and a mirror body (23) with a plurality of cooling channels (27) which are formed in the mirror body (23), a reflective surface (24) which is formed on the mirror body (23), and a cooling system (30, 32, 33, 35) for generating a coolant flow along the cooling channels (27). The cooling channels (27) extend between an inlet distributor (25) and an outlet distributor (26), and the mirror body (23) is movably suspended on a frame structure (29), wherein the inlet distributor (25) is connected to a coolant store (33) via a first flexible connection line (35) and/or the outlet distributor (26) is connected to the coolant store (33) via a second flexible connection line (32). The mirror device comprises a control unit (34) which supplies a measurement value relating to a state variable to the projection exposure system (10, 22). The control unit (34) analyzes the measurement value in order to generate a control signal, and the cooling system (30, 32, 33, 35) is controlled using the control signal such that the coolant pressure is modified in order to adapt the geometric shape of the reflective surface (24). The invention also relates to a method for operating a mirror device.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors
37.
BIPOD, OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS
A bipod (202, 202A, 202B, 204, 206) for adjusting an optical element (102, 102') of an optical system (100) for a projection exposure apparatus (1), having a mechanism (224) which is couplable to the optical element (102, 102') in order to adjust the optical element (102, 102'), a base portion (218), a first tower portion (220), which extends out of the base portion (218), a second tower portion (222), which differs from the first tower portion (220) and likewise extends out of the base portion (218), wherein the mechanism (224) is arranged between the first tower portion (220) and the second tower portion (222), and wherein the first tower portion (220) and the second tower portion (222) are connected to each other facing away from the base portion (218) in order to increase the stiffness of the bipod (202, 202A, 202B, 204, 206).
An imaging optical unit comprises a plurality of mirrors for imaging an object field in an object plane into an image field in an image plane. An image-side numerical aperture is greater than 0.55. A ratio between an object/image offset and a meridional transverse direction is at least 0.5. A ratio between a working distance between the object plane and a reflection portion, closest to the object plane, of one of the mirrors and the meridional transverse dimension is at least 0.05. The working distance is at least 270 mm. This can yield an imaging optical unit, the use of which is relatively manageable in a projection exposure apparatus, such as for EUV projection lithography.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
The invention relates to a method (10) for processing a reference element (14) for an interferometer configured to measure a surface shape of a test object, wherein the reference element (14) is transmissive in relation to a measurement radiation of the interferometer and comprises a first surface (16) that serves as reference surface for the interferometric measurement of the test object. The method (10) comprises the steps of creating (60) a first interferogram by superimposing a first measurement wave (64) created by reflection at the reference surface (16) on a second measurement wave (66) created by interaction with a standard test object (32); creating (70) a second interferogram by superimposing the first measurement wave (64) created by reflection at the reference surface (16) on a third measurement wave (72, 172), the third measurement wave traveling along a beam path (73; 173) that differs from a beam path (67) traveled by the second measurement wave; and evaluating (68, 74) the interferograms and processing (78) the first surface (16) of the reference element (14) and a further surface opposite the first surface (16) on the basis of the evaluation result. The invention also relates to a corresponding device (12) for processing a reference element (14).
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 9/02055 - Reduction or prevention of errors; Testing; Calibration
G01B 21/04 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
40.
METHOD TO ADJUST AN ILLUMINATION BEAM PATH WITHIN AN ILLUMINATION OPTICS AND ILLUMINATION OPTICS HAVING AN ADJUSTMENT SYSTEM
A method is presented to adjust an illumination beam path within an illumination optics (4) having a first facet mirror (20) with a plurality of mirror facets (21) being tiltable via respective actuators and further having a second facet mirror (22) with a plurality of micro mirrors (28), each being equipped with a thermal load sensor. The micro mirrors (28) are groupable in micro mirror groups (27), each of these being attributed to one of the plurality of mirror facets (21). In the method, illumination light (16) is guided along a first raw illumination beam path via at least one illuminated mirror facet (21) of the field facet mirror (20) on the one hand, and the micro mirrors (28) of the second facet mirror (22) on the other, to which the illumination light (16) is guided via the at least one illuminated mirror facet (21) of the field facet mirror (20). A thermal load on the illuminated micro mirrors (28) of the second facet mirror (22) is measured. The measured thermal load is compared to nominal data. In case a deviation between the measured thermal load and the nominal data is beyond a given tolerance, the illumination optics (4) is readjusted. Such adjustment method gives the possibility of a reliable and/or fast adjustment result.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
41.
METHOD AND APPARATUS FOR QUALIFYING A MASK FOR USE IN LITHOGRAPHY
A method for qualifying a mask for use in lithography is proposed. The method includes the following steps: a provision of an apparatus for qualifying a mask, the apparatus comprising an optical system and an evaluation and control device; a detection of at least one first phase difference of light at the mask by use of the optical system and the evaluation and control device; loading the mask; detecting at least one second phase difference of light at the mask by use of the optical system and the evaluation and control device; and implementing a comparison of the first phase difference with the second phase difference by use of the evaluation and control device.
A component for a projection exposure apparatus for semiconductor lithography, comprises an optical element and an actuator, which are force-fittingly connected to each other. The actuator at least locally deforms the optical element. The actuator can be configured to minimize the loss in rigidity at the peripheries delimiting the actuator on the imaging quality. A method for designing a component of projection exposure apparatus is provided.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
The invention relates to a fiber strand (60) for a sector heater (50) of a projection device (20) for microlithography, and also to a sector heater (50), an arrangement (60) and a projection device (20), each for or comprising such a fiber strand. The fiber strand (60) comprises a plurality of separate guiding fibers (61) and has a connector (62) at the end of the fiber strand (60) provided for attaching to the sector heater (50), in which connector the individual guiding fibers (61) are each secured in defined positions, and at which connector a multi-lens array unit (64) is configured and secured positionally fixedly in a defined position relative to the guiding fibers (61) in such a way that at least one lens (65) each of the multi-lens array unit (64) forms a collimator for one each of the guiding fibers (61).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
44.
MICROMIRROR ARRAY HAVING A NUMBER OF INDIVIDUAL MIRROR ELEMENTS
The invention relates to a micromirror array (10) having a number of individual mirror elements (12), which comprise a reflection surface (14), and, between a carrier plate (18) of the reflection surface (14) and a base plate (32), sensor electrodes and actuator electrodes (80) are provided in respective ring arrangements (26, 28) for moving the reflection surface (14). The actuator electrodes (80) comprise passive movable electrodes (20) on the carrier plate (18) and active stationary electrodes (24) on the base plate (32). A substantially planar spring structure (22, 72) is arranged between the passive movable electrodes (20) on the carrier plate (18) and the active stationary electrodes (24) on the base plate (32), has a substantially rectangular contour (96), and is stretched in the direction of diagonals (66, 68).
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
45.
METHOD FOR OPERATING AN OPTICAL COMPONENT, AND OPTICAL COMPONENT
The invention relates to a method for operating an optical component (100) having a mirror element (20), a substrate (30) for carrying the mirror element (20), an actuator device (40) for tilting the mirror element (20) about one or two tilt axes (28), and a sensor device (50) having a sensor electrode structure (52) for detecting a tilt angle (θ) of the mirror element (20) on the basis of capacitance changes. The sensor electrode structure (52) here comprises a plurality of active sensor electrodes (521) and a plurality of passive sensor electrodes. According to the invention, different voltages are applied to the passive sensor electrodes (522) during the operation of the optical component (100).
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The invention relates to a microelectromechanical device (110) comprising a carrier substrate (100) with a substrate surface (100a) and a plurality of MEMS modules (120), wherein each of the plurality of MEMS modules (120) comprises an ASIC layer (140) with an ASIC layer front side (140a) and an ASIC layer back side (140b), a base plate (160) with a base plate front side (160a) and a base plate back side (160b) and a plurality of microelectromechanical components (130) with a component back side (130b), wherein the base plate (160) is arranged on the ASIC layer front side (140a) and the base plate back side (160b) is connected to the ASIC layer front side (140a) and the plurality of microelectromechanical components (130) are arranged on the base plate front side (160a) and the component back sides (130b) of said microelectromechanical components are connected to the base plate front side (160a), wherein the ASIC layer (140) comprises an ASIC for controlling the plurality of microelectromechanical components (130), wherein the ASIC is connected to the microelectromechanical components (130) by way of electrical contacts (144), wherein the plurality of MEMS modules (120) are arranged on the substrate surface (100a) and wherein the ASIC layer back sides (140b) of the plurality of MEMS modules (120) are connected to the substrate surface (100a).
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 7/04 - Networks or arrays of similar microstructural devices
47.
INDIVIDUAL MIRROR OF A PUPIL FACET MIRROR AND PUPIL FACET MIRROR FOR AN ILLUMINATION OPTICAL UNIT OF A PROJECTION EXPOSURE APPARATUS
An individual mirror (11) of a pupil facet mirror (10) of an illumination optical unit (25) of a projection exposure apparatus (1) is mounted so as to be pivotable about two pivot axes (31, 32), wherein a ratio of the pivotability of the individual mirror (11) about the two pivot axes (31, 32) is at least 2:1.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
48.
HEATING ASSEMBLY, OPTICAL SYSTEM AND METHOD FOR HEATING AN OPTICAL ELEMENT
The invention relates to a heating assembly as well as an optical system and a method for heating an optical element in an optical system, in particular in a microlithographic projection exposure system. The heating assembly according to the invention for heating an optical element comprises a light source (101, 201), a device (110, 210) for generating a two-dimensional intensity distribution from light emitted by the light source, a projection lens system (140, 240) for projecting the two-dimensional intensity distribution onto the optical element (150, 250) to be heated, and an image guide (130, 230) for optical transmission of the intensity distribution arranged in the optical path between the device (110, 210) for generating the two-dimensional intensity distribution and the projection lens system (140, 240).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
49.
OPTICAL DEVICE, METHOD FOR ADJUSTING A SETPOINT DEFORMATION AND LITHOGRAPHY SYSTEM
An optical apparatus for a lithography system comprises at least one optical element comprising an optical surface. The optical apparatus also comprises one or more actuators for deforming the optical surface. A strain gauge device is provided for determining the deformation of the optical surface. The strain gauge device comprises at least one optical fiber that maintains polarization.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G01L 1/22 - Measuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
G02B 6/38 - Mechanical coupling means having fibre to fibre mating means
G02B 6/42 - Coupling light guides with opto-electronic elements
The present application relates to a method for characterizing a shielding element of a particle beam device for shielding an electric field between a sample position and a particle beam source. The method comprises positioning a means for characterizing the shielding element on a side of the shielding element which is facing the sample position.
The invention relates to a microelectromechanical apparatus (100, 200) comprising one or more microelectromechanical devices (130) each having a mirror element (134), an actuator (132) for moving the respective mirror element (134), and a heating element (138, 240) for heating the respective mirror element (134), wherein the microelectromechanical apparatus (100) comprises one or more temperature sensors (135, 145, 210, 212) and an electronic system (125, 225), wherein the control electronic system (125, 225) is configured to determine a temperature value of the respective mirror element (134) using the one or more temperature sensors (135) for each mirror element (134), and the electronic system (125, 225) is further configured to adjust a heating power for each of the heating elements (138, 240). The invention further relates to an illumination optical unit (172), to an illumination system (174) and to a projection exposure apparatus (170), each having a microelectromechanical apparatus (100, 200) according to the invention, and to a method for controlling temperatures of a microelectromechanical apparatus (100, 200) in a closed-loop.
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
52.
Method for Operating an Optical Component, and Optical Component
The invention relates to a method for operating an optical component (100) having a mirror element (20), a substrate (30) for carrying the mirror element (20), an actuator device (40) for tilting the mirror element (20) about one or two tilt axes (28), which actuator device has a first actuator electrode structure (42) and a second actuator electrode structure (44), and a sensor device (50) for detecting a tilt angle (θ) of the mirror element (20). The first actuator electrode structure (42) in this case comprises a plurality of first active actuator electrodes (421) and at least one first passive actuator electrode (422). The second actuator electrode structure (44) in this case comprises a plurality of second active actuator electrodes (441) and at least one second passive actuator electrode (442). At least one of the first active actuator electrodes (421) is subjected to a first voltage (U1) and at least one of the second active actuator electrodes (442) is subjected to a second voltage (U2). In order to tilt the mirror element (20), the first and the second voltage (U1, U2) are changed with different rates of change.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
53.
SEGMENTATION OR CROSS SECTIONS OF HIGH ASPECT RATIO STRUCTURES
A method identifies ring structures in pillars of high aspect ratio (HAR) structures. For segmentation of rings, a machine learning-logic is used. A two-step training method for the machine learning logic is described.
The invention relates to a method for calibrating a mirror array (100) having a plurality of mirror elements (20). For each of the plurality of mirror elements (20), a displacement device (40) for tilting the mirror element (20), at least one mechanical stop (32) for delimiting the tilting of the mirror element (20) and a sensor device for sensing the position of the mirror element (20) are provided. The method comprises the following steps: - sensing stop positions of the individual mirror element (20); - generating a spring geometry for the at least one mechanical stop (32) in order to generate a soft stop in an end stop region; - reducing a motor constant of the displacement device (40) in the end stop region; - applying an identical voltage in the end stop region between the contact partners or similar voltages at the respective contact partners.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
55.
ARRANGEMENT AND METHOD FOR CALIBRATING A MIRROR ARRAY
The invention relates to an arrangement (100) for calibrating a mirror array (30) having a plurality of mirror elements (34). The arrangement (100) comprises a detection light device (40) and a detection device (60). The detection light device (40) comprises at least one detection light source (41, 42, 43, 44, 45, 46) that is designed to generate a detection light beam (50) that is directed to a reflection surface (36) of the mirror elements (34) of the mirror array (30). The detection device (60) comprises a first detector array (62) having a plurality of detectors that are designed to detect the angular positions of the individual mirror elements (34) of the mirror array (30) based on temperature changes and/or electric currents generated by a detection light beam (52) reflected from the mirror elements (34) of the mirror array (30).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
56.
METHOD FOR SINGULATING A WAFER, AND SUITABLE DEVICE
The invention relates to a method for singulating a wafer (100) having a first surface (100a) and a second surface (100b) opposite the first surface (100a), the method comprising the following steps: bringing the wafer (100) into contact with a protective device (120) having one or a plurality of carrying structures (122), such that the first surface (100a) of the wafer (100) is in contact with the plurality of carrying structures (122), singulating the wafer (100) that is in contact with the protective device (120) into a plurality of chips (180a, 180b), and removing (440) the chips (180a, 180b) from the wafer (100) that is in contact with the protective device (120). The invention furthermore relates to a protective device (120) having one or a plurality of carrying structures (122) for temporarily carrying a wafer (100), the protective device being configured to be used in a method according to the invention.
The invention relates to a micro-electromechanical device (110) comprising a support substrate (100) with a substrate surface (100a) and multiple MEMS modules (120), wherein each module comprises an ASIC layer (140) with an ASIC layer front face (140a) and an ASIC layer rear face (140b), a base (160) with a base front face (160a) and a base rear face (160b), and multiple micro-electromechanical components (130) with component rear faces (130b). The base (160) is arranged on the ASIC layer front face (140a), and the base rear face (160b) is bonded to the ASIC layer front face via electric contacts (144). The components (130) are arranged on the base front face (160a), and the component rear faces (130b) thereof are connected to the base front face. The contacts (144) are partly surrounded by a protective frame (195) which is arranged between the base (160) and the ASIC layer (140). The ASIC layer (140) has an ASIC in order to actuate the components (130), wherein the ASIC is electrically connected to the components using some of the contacts (144). The modules (120) are arranged on the substrate surface (100a), and the ASIC layer rear faces (140b) of the modules are connected to the substrate surface.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
58.
MICROMIRROR ARRAY WITH RESILIENTLY MOUNTED INDIVIDUAL MIRROR ELEMENTS
The invention relates to a micromirror array (10) having a number of individual mirror elements (12) which are actuatable independently of one another, which are arranged as a field and which are each movable by way of an actuator system, more particularly actuator electrodes (38), wherein the individual mirror elements (12) each have a reflection surface (30). A spring plane (34) in which at least one spring element (52) supporting the individual mirror element (12) about a vertically displaced pivot point (90) is accommodated extends below the reflection surface (30) of the individual mirror elements (12), the spring element supporting the individual mirror element (12) in the case of movements about an X-axis (14) and/or a Y-axis (16).
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
59.
ILLUMINATION SYSTEM, RADIATION SOURCE APPARATUS, METHOD FOR ILLUMINATING A RETICLE, AND LITHOGRAPHY SYSTEM
The invention relates to an illumination system (30) for a lithography system, in particular for a projection exposure apparatus (100, 200), for illuminating a reticle (106, 203) of the lithography system with a used radiation (2) from a radiation source apparatus (1), comprising an optics device (31) having at least one optical element (32) and at least one mixing device (7). According to the invention, an interface device (8) is provided for input coupling a plurality of individual radiations (4), which form the used radiation (2), into the mixing device (7), wherein a source étendue (33) of the radiation source apparatus (1) fills at least 50 percent, preferably at least 80 percent, of an optics étendue (34) of the optics device (31) and/or mixing device (7).
The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
61.
MEASUREMENT DEVICE FOR INTERFEROMETRIC MEASUREMENT OF A SURFACE SHAPE
A measurement apparatus (10) for interferometrically measuring a shape of a surface (12) of a test object (14) in relation to a reference shape includes a diffractive optical element (30) generating a test wave (32) from measurement radiation (22), whereas a wavefront of the test wave is adapted to a target shape of the surface of the test object and the target shape is configured as a first non-spherical surface, and a reference element (38) with a reference surface (40) having the reference shape, the reference shape being configured as a further non-spherical surface and the reference element including a low thermal expansion material with a mean coefficient of thermal expansion having an absolute value of no more than 200×10−6 K−1 in the temperature range from 5° C. to 35° C.
A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an image of at least a portion of the photomask,
b) determining a geometric shape of a defect in the image as a repair shape, with the repair shape comprising a number n of pixels,
c) subdividing, in computer-implemented fashion, the repair shape into a number k of sub-repair shapes, with an i-th of the k sub-repair shapes having a number mi of pixels, which are a subset of the n pixels of the repair shape,
d) providing an activating particle beam and a process gas at each of the mi pixels of a first of the sub-repair shapes for the purposes of processing the first of the sub-repair shapes,
e) repeating step d) for the first of the sub-repair shapes over a number j of repetition cycles, and
f) repeating steps d) and e) for each further sub-repair shape.
A heating arrangement, for example for use in a microlithographic projection exposure apparatus, comprises: at least one beam shaping unit for beam shaping of the electromagnetic radiation steered from a radiation source to the at least one optical element; and a sensor arrangement having at least one intensity sensor. The at least one beam shaping unit comprises at least one microstructured element for steering some the electromagnetic radiation to the sensor arrangement when the heating arrangement is in operation. Methods are provided.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
INTERMEDIATE PRODUCT FOR PRODUCING AN OPTICAL ELEMENT FOR A PROJECTION EXPOSURE APPARATUS, OPTICAL ELEMENT FOR A PROJECTION EXPOSURE APPARATUS, METHOD FOR PRODUCING AN INTERMEDIATE PRODUCT, AND METHOD FOR PRODUCING AN OPTICAL ELEMENT
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
65.
DEVICE FOR IMAGING AND PROCESSING A SAMPLE USING A FOCUSED PARTICLE BEAM
The present application relates to a device for imaging and processing a sample using a focused particle beam, comprising: (a) at least one particle source which is configured to create a particle beam in an ultrahigh vacuum environment; (b) at least one sample chamber which serves to accommodate the sample and which is configured to image the sample in a high vacuum environment and process the sample in a medium vacuum environment; (c) at least one column which is arranged in a high vacuum environment and which has at least one particle-optical component configured to shape a focused particle beam from the particle beam and direct said focused particle beam at the sample; (d) at least one detection unit which is arranged within the at least one column and which is configured to detect particles emanating from the sample; (e) at least one gas line system which terminates at the outlet of the focused particle beam from the column and which is configured to locally provide at least one process gas at the sample with a pressure such that the focused particle beam is able to induce a particle beam-induced local chemical reaction for processing the sample; and (f) at least one pressure adjustment unit through which the particle beam and the particles emanating from the sample pass and which is configured to limit a pressure increase caused at the at least one detection unit as a result of processing the sample to a factor of 10 or less, preferably to a factor of 5 or less, more preferably to a factor of 3 or less, and most preferably to a factor of 2 or less, without impeding access of the particles emanating from the sample to the at least one detection unit.
The invention relates to a method and an apparatus for characterizing a microlithography mask. In one aspect, in a method according to the invention, the mask to be characterized is illuminated with light from a light source via an illumination optics unit, said light having a wavelength of less than 30 nm, wherein light that passes in a used beam path from the light source via the mask to a sensor unit is evaluated, wherein, at least intermittently, a portion of the light emitted by the light source is outcoupled from the used beam path by use of a mirror array having a multitude of independently adjustable mirror elements, and wherein, intermittently by use of the mirror array, all light is outcoupled from the used beam path for establishment of a defined illumination time of the sensor unit.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
68.
DEVICE AND METHOD FOR SENSOR-BASED MEASUREMENT OF CHEMICAL AND/OR PHYSICAL PROPERTIES OF AN ADHESIVE LAYER AND/OR OF A MEDIUM IN CONTACT WITH THE ADHESIVE LAYER, AND METHOD FOR PRODUCING A CORRESPONDING DEVICE AND METHOD FOR SENSORBASED MEASUREMENT
Device (200) for sensor-based measurement of chemical and/or physical properties of an adhesive layer (203) in an apparatus for semiconductor technology (100), comprising one first element (201) to be adhesively bonded, one second element (202) to be adhesively bonded, an adhesive layer (203) integrally connecting the first element (201) to be adhesively bonded and the second element (202) to be adhesively bonded, by way of a first boundary surface (204) and by way of a second boundary surface (220), respectively, and one first sensor unit (205), characterized in that the one first sensor unit (205) is arranged in or on the adhesive layer (203) at least in part, with the result that all regions of the one sensor unit (205) used to measure the chemical and/or physical properties of the adhesive layer (203) have at least one boundary surface (222), formed in reciprocal adhesively connecting fashion, to the adhesive layer (203).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
The invention relates to a method for thermally stabilizing an adhesive connection (37) between two components (Mx, 117, 33, 38, 34) of an optical assembly (30.1, 30.2, 30.3), comprising the following method steps: - establishing the adhesive connection (37) between the components (Mx, 117, 33, 38, 34), - curing the adhesive (36), annealing the adhesive (36) to increase the degree of curing and the temperature of the glass transition region of the adhesive (36). The invention also relates to an optical assembly (30.1, 30.2, 30.3) having an optical element (Mx, 117) and a solid-state actuator (38) connected to the optical element (Mx, 117) by means of an adhesive connection (37), wherein the solid-state actuator (38) is biased such that the optical element (Mx, 117) is in a zero position.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
70.
DRIVE DEVICE, OPTICAL SYSTEM AND LITHOGRAPHY APPARATUS
A drive device (100) for driving at least one actuator (200) for actuating an optical element (310) of an optical system (4, 10), comprising an end stage (110), which is configured to boost an input voltage (V1) using a quiescent current (I1) of the end stage (110) to a drive voltage (V2) for the actuator (200), and a supply device (120), which is configured to adjust the quiescent current (I1) for the end stage (110) depending on a specific dynamics request (DA) for the end stage (110).
G02B 7/08 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification adapted to co-operate with a remote control mechanism
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
H03F 1/02 - Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
The present application relates to a method and a device for correcting at least one image error when scanning a charged particle beam of a scanning particle microscope over a sample, the method comprising the steps of: (a) dividing a scanned region of the charged particle beam into at least two partial regions, with each of the at least two partial regions containing at least one structure element; (b) determining a correction value for the at least one structure element with regards to a target position of the at least one structure element for each of the at least two partial regions; and (c) correcting a beam deflection of the charged particle beam for at least one of the at least two partial regions using the determined correction value.
Method of characterizing a fault in a scanning electron microscope (100), wherein the scanning electron microscope (100) is suitable for analysing and/or processing a sample (10), especially a lithography mask, with the aid of an electron beam (106), wherein the method has the following steps: a) putting (Si) the scanning electron microscope (100) in an equilibrium state, b) introducing (S2) a trigger event into the scanning electron microscope (100) that disrupts the equilibrium state, c) detecting (S3) a response behaviour of the scanning electron microscope (100) to the trigger event, and d) comparing (S4) the response behaviour detected with an expected response behaviour for characterization of the fault.
The invention relates to a device (30) for applying a fluid (38) onto at least one surface (32) of a substrate (31), wherein the device (30) comprises a spraying array (36) with at least two spraying units (40) for applying the fluid (38). The device is characterised in that the device (30) is designed such that a nozzle (42) of at least one spraying unit (40) of the spraying array (36) and the substrate surface (32) of the component (50) can be moved relative to one another in at least three degrees of freedom. The invention also relates to a method for applying a fluid (38) to develop a coating (33) on at least one surface (32) of a substrate (31), wherein the device (30) comprises a spraying array (36) with at least two spraying units (40) for applying the fluid (38) and a control unit (47) for controlling the spraying array (36). The method is characterised in that a nozzle (42) of the at least one spraying unit (40) and the substrate surface (32) can be moved relative to one another in at least three degrees of freedom during application of the fluid (38). Furthermore, the invention relates to a component (50) of a system in semiconductor technology (1, 101) with a structure (35), wherein the structure (35) was developed by means of the aforementioned method.
B05B 1/14 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with strainers in or outside the outlet opening
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
B05B 12/10 - Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material discharged, of ambient medium or of target responsive to temperature or viscosity of liquid or other fluent material discharged
74.
METHOD AND APPARATUS FOR DEPOSITION OF AT LEAST ONE LAYER, OPTICAL ELEMENT AND OPTICAL ARRANGEMENT
The disclosed techniques relate to a method for depositing at least one layer composed of an ionically bonded solid on a substrate, comprising the following steps: converting a coating material to the gas phase and depositing the coating material converted to the gas phase on the substrate. The layer is irradiated with UV/VIS light during the deposition. The disclosed techniques also relate to an apparatus for implementing the disclosed method and optical elements and devices created using the disclosed method.
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using plasma jets
C23C 16/52 - Controlling or regulating the coating process
The invention relates to a method for inspecting a component (2), in particular a component (2) of a lithography system, wherein - at least one inspection area (6) of the component (2) is illuminated with a search beam (5) in a darkroom (3); and - the inspection area (6) is inspected for the presence of at least one defect (12); wherein - if at least one defect (12) is present, the at least one defect (12) is characterised. According to the invention: - at least one image recording (9) of the inspection area (6) is recorded by means of a camera device (7), wherein - a relative position (10a) and orientation (10b) of the camera device (7) relative to the component (2) is determined at the time the image recording (9) of the inspection area (6) is recorded; and - the inspection area (6) is inspected for the presence of at least one defect (12) on the basis of the image recording (9); wherein - if at least one defect (12) is present, the at least one defect (12) is characterised on the basis of the image recording (9).
G01N 21/94 - Investigating contamination, e.g. dust
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G01M 11/00 - Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and
b) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.
G03F 1/20 - Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
H01J 37/22 - Optical or photographic arrangements associated with the tube
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
77.
MEASUREMENT APPARATUS, METHOD FOR MEASURING BY INTERFEROMETRY, PROCESSING METHOD, OPTICAL ELEMENT AND LITHOGRAPHY SYSTEM
A measurement apparatus (1) for measuring a shape of a surface (2) of a test object (3), in particular an optical surface (2) by interferometry, has:
an illumination device (4) with an illumination source (5) for generating an illumination wave (6),
an interferometer device (7) with a splitting element (8) for splitting the illumination wave into a test wave (9) directed at the surface (2) and into a reference wave (10), and for combining the returning test wave (9), having interacted with the surface to be measured, with the reference wave (10),
a registration device (11) for registering and evaluating an interference pattern to determine a deviation of the measured surface shape from a target shape, and
a control device (12) configured to split the surface (2) to be measured into a plurality of individual areas (13) to be measured.
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
78.
CHARGED PARTICLE BEAM SYSTEM, METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM, METHOD OF RECORDING A PLURALITY OF IMAGES AND COMPUTER PROGRAMS FOR EXECUTING THE METHODS
The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a ci plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.
A method for optical contact bonding components includes: placing a first surface (2a) of a first component (2) onto a second surface (3a) of a second component (3), to form an air film, and pressing the first surface against the second surface for optical contact bonding of the two components. Placing and pressing the first component is carried out by a robot (4). A laminar gas flow (10) is generated between the first and second surfaces with a ventilation device (9). A related apparatus (1) includes: the robot, configured to place the first surface onto the second surface thereby forming an air film. The robot presses the first surface against the second surface, to optically contact bond the first and second components. A holding device (8) holds the second component during the placing and pressing. A ventilation device generates the laminar gas flow between the first and second surfaces.
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
iiiiii) have at least two different neutral tilt positions in a range around a mean value of a total tilt angle range. The result is a facet mirror assembly having reduced requirements in respect of a tilt actuator system of the facet mirror assembly.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
An optical system (100) for a lithography machine (1), comprising a circuit board (200) that is made of a composite material (210), wherein a vacuum-tight housing (220) is formed by the composite material (210) in an interior of the circuit board (200) in which interior a number of active and/or passive components (231, 232) are arranged.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
83.
METHOD FOR DISTORTION MEASUREMENT AND PARAMETER SETTING FOR CHARGED PARTICLE BEAM IMAGING DEVICES AND CORRESPONDING DEVICES
A method for determining a measure of an image distortion of a charged particle beam imaging device (500) is provided. The method comprises providing a plurality of images of a region of a sample using the charged ion beam device (500), and determining the measure of the image distortion based on displacements of corresponding objects between the plurality of images. A method of setting one or more parameters of a charged particle beam imaging device (500) based on a measure of the image distortion as well as corresponding devices and systems are also provided.
A method for checking a lithography mask (100) for a repair of the lithography mask (100), the lithography mask (100) having a plurality of edges (110) between partial regions of the lithography mask (100) and the object of the repair lying in an adjustment of a profile (VER, VER0, VER1) of a selected edge (111-113) in a repair portion (121-123) of the selected edge (111-113), comprises: a) capturing (S1) an image representation (IMG) of a repair region (130) of the lithography mask (100) comprising the repair portion (121-123) of the selected edge (111-113), b) determining (S2) the profile (VER, VER0, VER1) of the selected edge (111-113) in the repair portion (121-123) on the basis of the captured image representation (IMG) of the repair region (130), b1) determining a reference profile (REF, REF0, REF1) on the basis of a profile of an edge (110, 110', 113A, 113B) corresponding to the selected edge (111- 113), the corresponding edge (113A, 113B) being an edge (110, 110') which should not be repaired or a portion (113A, 113B) of the selected edge (111-113) which should not be repaired, the corresponding edge (110, 110', 113A, 113B) being determined on the basis of the captured image representation (IMG) of the repair region (130), and c) comparing (S3) the determined profile (VER, VER0, VER1) of the selected edge (111-113) with a reference profile (REF, REF0, REF1).
A method of producing an optical element for a lithography apparatus, comprising the steps of: a) detecting a height profile of a surface of a crystal substrate of the optical element, and b) ascertaining, using the height profile detected, an installed orientation (δ2, δ4, δ6) of the optical element in an optical system of the lithography apparatus in relation to a stress-induced birefringence on incidence of polarized radiation, where the installed orientation (δ2, δ4, δ6) is an orientation in relation to a rotation of the optical element about a center axis of the optical element that runs through the surface.
B24B 13/06 - Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor grinding of lenses, the tool or work being controlled by information carrying means, e.g. patterns, punched tapes, magnetic tapes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
An actuator-sensor device for an optics module of a lithography apparatus comprises: an actuator-sensor unit having an actuator and a sensor; a control unit electrically connected to the actuator-sensor unit; and a support element which on a first supporting side of same supports the actuator-sensor unit and which on a second supporting side of same supports the control unit, with the second supporting side being opposite to the first supporting side.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
The invention relates to an optical system (100) for a projection exposure apparatus (1), the optical system comprising a first component (102), a second component (104) and a compensation device (200, 300) which is arranged between the first component (102) and the second component (104), the compensation device (200, 300) comprising connecting portions (212, 214, 216, 218, 230, 232, 234, 236, 312, 314, 318, 320) which function as solid-body articulations and are elastically deformable in order to adapt the compensation device (200, 300) to a tilting of the second component (104) relative to the first component (102) about a first spatial direction (x) and/or about a second spatial direction (y) which differs from the first spatial direction (x), the compensation device (200, 300) comprising a fastening ring (202, 302) and an inner ring (204, 304) which surrounds the fastening ring (202, 302), the inner ring (204, 304) being connected to the fastening ring (202, 302) by means of inner connecting portions (212, 214, 216, 218, 312, 314), and the inner ring (204, 304) being tiltable relative to the fastening ring (202, 302) about a first tilting axis (228, 316) by means of an elastic deformation of the inner connecting portions (212, 214, 216, 218, 312, 314).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
88.
METHOD FOR PRODUCING A MIRROR OF A LITHOGRAPHY SYSTEM
A method for producing a mirror of a lithography system includes providing first and second mirror parts. Cooling channels having elongate cooling channel openings in the region of a first connecting surface of the first mirror part are formed in the first mirror part, and/or cooling channels having elongate cooling channel openings in the region of a second connecting surface of the second mirror part are formed in the second mirror part. The method also includes bringing together the first and second mirror parts so that initially a partial region of the first connecting surface and a partial region of the second connecting surface come into contact and form a common contact surface. The common contact surface is enlarged by continuing to bring the first and second mirror parts together in a direction along the longitudinal extents of the cooling channel openings.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
89.
RESIDUAL GAS ANALYZER, PROJECTION EXPOSURE APPARATUS COMPRISING A RESIDUAL GAS ANALYZER, AND METHOD FOR RESIDUAL GAS ANALYSIS
The invention relates to a residual gas analyzer, in particular for analyzing a residual gas in an EUV projection exposure apparatus (10, 22), comprising a mass spectrometer (27) and an admission device (29, 34) for admitting ionized constituents of the residual gas from a vacuum environment (25) into the mass spectrometer (27). The admission device (29, 34) comprises an ion decelerator (29), with the ion decelerator (29) having an adjustable deceleration voltage in order to subject the ionized constituents to selection with respect to kinetic energy before being transferred into the mass spectrometer (27). The invention also relates to a projection exposure apparatus comprising such a residual gas analyzer, and a method for residual gas analysis.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
90.
RESIDUAL GAS ANALYSER, PROJECTION EXPOSURE APPARATUS COMPRISING A RESIDUAL GAS ANALYSER AND METHOD OF RESIDUAL GAS ANALYSIS
Residual gas analyser, especially for analysing a residual gas in a microlithography projection exposure apparatus, comprising a mass spectrometer (27) and an admission device (28, 29, 24) for admitting constituents of the residual gas from a vacuum environment (25) into the mass spectrometer (27). The admission device (28, 29, 24) comprises a switchable ion source (28, 41). The ion source (28, 41) in a first switching state allows ionized constituents of the residual gas to pass through. The ion source (28, 41) in a second switching state ionizes neutral constituents of the residual gas. The invention also relates to a projection exposure apparatus comprising such a residual gas analyser and to a method of residual gas analysis.
H01J 49/04 - Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
H01J 49/06 - Electron- or ion-optical arrangements
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
91.
DEVICE AND METHOD FOR DETERMINING AN ACCURACY OF A CONCAVE MIRROR
The invention relates inter alia to a measuring device (1) for determining an accuracy of a surface region (11) of a reflection surface (10) of a concave mirror (12) having a first focus (14) and a second focus (16) and an optical axis (18) running through the first focus and the second focus, comprising: a light source (13) for providing a measurement beam (130); an input beam splitter (15) for splitting the measurement beam (130) into a reference beam (151) and an object beam (152); an input lens element (17) for focusing the object beam (152) on a focal point (19); a mount for arranging the concave mirror (12) in a position in which the focal point (19) and the first focus (14) coincide and in which a central ray of the object beam (152) intersects the optical axis (18), with the object beam (152) being reflected at the surface region (11) and focused on the second focus (16); an output beam splitter (23) for superimposing the reference beam (151) and the reflected object beam (152) to form an interference beam (230); and a detector (25) for detecting the interference beam (230).
The invention relates to a measuring assembly (1) for determining at least one distance between a first and a second element (2, 3), wherein the first element is designed to be translucent as a measuring matrix and has a semi-reflective first surface (7), wherein the second optical element (3) is designed as a EUV mirror and has an at least semi-reflective second surface (8), and wherein the first surface (7) lies opposite the second surface (8) at the distance two be detected, with a light beam source (13) and a light beam sensor (21), wherein a light beam (14) generated by the light beam source (13) is coupled into the first optical element (2) by a surface (11) that is different from the first surface (7), in such a way that a first partial light beam (19) is reflected by the first surface (7) and a second partial light beam (116) passing through the first surface (7) is reflected by the second surface (8) and each back into the first optical element (2), and wherein the light beam sensor (21) is arranged in such a way that it detects both partial light beams (19, 16) in order to determine the distance according to the detected partial light beams (19, 16)
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 9/02055 - Reduction or prevention of errors; Testing; Calibration
93.
METHOD FOR PRODUCING A MIRROR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
A method for producing a mirror of a microlithographic projection exposure apparatus comprises providing a first mirror part having a first connecting surface and a second mirror part having a second connecting surface is provided. Cooling channels and/or auxiliary channels are formed in the second mirror part. The method also includes bringing together the first and second mirror parts so that initially a partial region of the first connecting surface and a partial region of the second connecting surface come into contact and form a common contact surface. The method further includes enlarging the contact surface by continuing to bring the first and second mirror parts together in a transverse direction with respect to the cooling channels or auxiliary channels.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
94.
METHOD FOR CHARACTERIZING A DIFFRACTIVE OPTICAL ELEMENT, AND METHOD FOR PRODUCING A DIFFRACTIVE OPTICAL ELEMENT WITH IMPLEMENTATION OF THE CHARACTERIZATION METHOD
A diffractive optical element (DOE) has first and second structure portions for specifying a first and a second optical path length for used radiation incident on the DOE, with the path lengths differing from one another. The first and the second structure portions appear alternately on a used surface of the DOE. A raw DOE is initially provided (10) when characterizing the diffractive optical element. Subsequently, interrelated first and/or second structure portions on the raw DOE are determined and interrelated first isolation structure portions, which are completely isolated from other first structure portions by way of second structure portions, and/or interrelated second isolation structure portions, which are completely isolated from other second structure portions by way of first structure portions, are ascertained therefrom. During the production of a correspondingly characterized DOE, at least one contact component can be applied to the raw DOE for the purpose of eliminating unwanted isolations between the structure portions. As a result, an option is developed for the production of diffractive optical elements with more precise diffraction, which in turn can be used when characterizing a surface shape of an optical surface of an optical element.
The invention relates to a projection exposure apparatus (1, 101) having a heating device (40) for heating at least one element (Mx, 117) of the projection exposure ap- paratus (1, 101) by means of electromagnetic radiation, the heating device (40) comprising an illumination optical unit (41) having a housing (42) and at least one optical element, arranged within the housing (42), for influencing the electromagnetic radiation (43.1, 43.2, 43.3, 62, 82.1, 82.2). Here, the at least one optical element (43.1, 43.2, 43.3, 62, 82.1, 82.2) is fixed within the housing (42) by way of at least one elastic element (45.1, 45.2, 45.3, 65, 83).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
96.
APPARATUS AND METHOD FOR PROVIDING SENSOR DATA OF AN OPTICAL SYSTEM, OPTICAL SYSTEM AND LITHOGRAPHY APPARATUS HAVING AN OPTICAL SYSTEM
An apparatus (100) for providing sensor data from a number N, with N ≥ 1, of sensors (301-30N) of an optical system (4, 10) of a lithography apparatus (1), comprising an analogue-to-digital converter (500), which is configured to convert an analogue signal sequence (AF), which is provided via a number N of channels (K1-KN) and includes a number N of analogue sensor signals (A1-AN) from the number N of sensors (301-30N) of the optical system (4, 10), into a digital signal sequence (DF) including N digital sensor signals (D1-DN), and a digital filter device (600) connected downstream of the analogue-to-digital converter (500), wherein the analogue-to-digital converter (500) and the digital filter device (600) have the same frequency-synchronized system clock and the digital filter device (600) is configured to filter the N digital sensor signals (D1-DN) of the digital signal sequence (DF) in a channel-specific manner for providing and storing a respective filtered digital sensor signal (F1-FN) for each of the N channels (K1-KN).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A facet system for a lithography apparatus comprises: a facet element with an optically effective surface; a first piezoactuator arrangement for tilting the facet element about a first spatial direction; and a second piezoactuator arrangement for tilting the facet element about a second spatial direction oriented at right angles to the first spatial direction. The first piezoactuator arrangement and the second piezoactuator arrangement are arranged in a common plane which is spanned by the first spatial direction and the second spatial direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The invention relates to a pin (30) for a tensioning system, comprising an adapter (32) which corresponds to the tensioning system and is mounted in a floating manner in a receptacle (42) in a housing (41) of an intermediate piece (40), wherein the adapter (32) is guided without lubricant in the housing (42). Furthermore, the invention relates to a component (80) which is equipped with corresponding pins (30).
B23Q 1/00 - Members which are comprised in the general build-up of a form of machine, particularly relatively large fixed members
99.
LENS ELEMENT FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS DESIGNED FOR OPERATION IN THE DUV, AND METHOD AND ARRANGEMENT FOR FORMING AN ANTIREFLECTION LAYER
The invention relates to a lens element for a microlithographic projection exposure apparatus designed for operation in the DUV, and a method and an arrangement for forming an antireflection layer. In accordance with one aspect, in the case of a lens element (100) according to the invention, an antireflection layer (102, 302) is formed on a lens substrate, the antireflection layer (102, 302) comprising a first material of relatively lower refractive index and a second material of relatively higher refractive index, and a mixture ratio between the first material and the second material varying in a lateral direction and/or in a vertical direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
G02B 13/14 - Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
A mirror for a projection exposure apparatus has a spectral filter, embodied as a grating structure (30), for light reflected by the mirror. The grating structure (30) has at least two grating levels and hence specifies at least two optical path lengths for the reflected light. An overall flank portion (35) of the grating structure (30) is arranged in each case between grating level structure portions (33, 34) of the grating structure (30), which each specify adjacent grating levels. A lower limit spatial wavelength over a defect-free partial flank portion of the overall flank portion (35) making up at least an extent of 90% of the overall flank portion (35) is in the range from 0.01 µm to 1 µm exclusive. An upper limit spatial wavelength over the defect-free partial flank portion of the overall flank portion (35) is in the range from 0.1 µm to 100 µm exclusive. An effective roughness of the defect-free partial flank portion above the lower limit spatial wavelength and below the upper limit spatial wavelength is less than 10 nm. A protective layer is arranged on the grating structure (30). This results in a mirror with an improved service life.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
