The present description discloses techniques for highly accurately determining the position of a substrate. This position determination method comprises: a step for setting a region including an end portion of a substrate in a reference image as a reference region, and detecting a pixel position of the end portion of the substrate in the reference region as a reference pixel position; a step for setting a region including the end portion of the substrate in a comparison image as a comparison region, and detecting the pixel position of the end portion of the substrate in the comparison region as a comparison pixel position; and a step for determining whether the difference between the reference pixel position and the comparison pixel position is greater than a predetermined threshold value.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
2.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
The present invention comprises: a liquid film formation step in which a horizontally oriented substrate is held with a surface on which a pattern has been formed facing upward while supplying a processing liquid in which a sublimable substance has been dissolved in a solvent to the surface of the substrate to form a liquid film of the processing liquid on the surface of the substrate; a solidified film formation step in which the solvent is removed from the liquid film on the surface of the substrate to form a solidified film of the sublimable substance; a sublimation step in which the solidified film is sublimed and removed from the surface of the substrate; and a residue prevention step in which a residue prevention liquid is made to circulate to the peripheral edge section of the surface of the substrate via the peripheral edge section on the rear surface of the substrate after starting the sublimation of the solidified film and prior to the completion of sublimation of the solidified film to thereby prevent a residue from being generated at the peripheral edge section of the surface of the substrate.
This image processing method is for detecting a position of a detection target from a captured image acquired periodically, wherein the following steps are repeated multiple times: a) a step (S103) for analyzing a region to be analyzed in the captured image, and deriving a detection error and the position of the detection target; and b) steps (S104 to S107) for changing the region to be analyzed on the basis of the magnitude of the detection error. Due to this configuration, the region to be analyzed can be shrunk while keeping the detection error within a prescribed range. Consequently, it is possible to reduce the amount of computation without increasing the detection error in image processing for detecting a specific object from time-series image data.
A substrate treatment device (100) includes a nozzle (2), a first liquid receiver (41), a second liquid receiver (42), a drainage line (L2), a collection line (L3), a first reservoir (111), and a second reservoir (151). The nozzle (2) exclusively ejects a first liquid chemical and a second liquid chemical toward a substrate (W). The first liquid receiver (41) receives the first liquid chemical discharged from the substrate (W). The second liquid receiver (42) receives the second liquid chemical discharged from the substrate (W). The first liquid chemical from the first liquid receiver (41) flows into the drainage line (L2). The second liquid chemical from the second liquid receiver (42) flows into the collection line (L3). The first reservoir (111) reserves a third liquid chemical to be contained in the first liquid chemical. The second reservoir (151) reserves a fourth liquid chemical to be contained in the second liquid chemical. The first liquid chemical and the second liquid chemical are of the same kind. The collection line (L3) leads the second liquid chemical to the first reservoir (111).
A sensing terminal (500) comprises a detection sensor (511), a control unit (520), a battery (550), and an acceleration sensor (512). The detection sensor (511) detects the environment inside a substrate processing device (100). The control unit (520) can transition between an active state in which a prescribed operation is executed on the basis of detection results from the detection sensor (511) and a sleep state that has lower power consumption than the active state. The battery (550) supplies power to the control unit (520). The acceleration sensor (512) detects acceleration. The control unit (520) transitions between the active state and the sleep state on the basis of detection results from the acceleration sensor (512).
The present invention pertains to a light exposure device and a beam interval measurement method therefor, does not require an increase in stage movement strokes even when there are many light exposure heads, and can do so at a low cost. This light exposure device is equipped with: a stage for supporting a substrate in a horizontal orientation; a light exposure unit for performing epi-illumination in which each of three or more light exposure heads arranged in a first direction, which is a horizontal direction, emits a light exposure beam toward the stage; a scanning movement unit for moving the stage in the horizontal direction and scanning the light exposure beams across the substrate; and a measurement unit for measuring the interval between the light exposure beams which are emitted from each of the light exposure heads. The measurement unit has: a light receiver for receiving the light exposure beams; a light receiver support unit which is integrally provided to the stage, supports the light receiver and is capable of moving the light receiver in the first direction relative to the stage; and an interval calculation unit for calculating the interval between the light exposure beams which are emitted by each of the plurality of light exposure heads.
This learning device comprises: an experiment data acquisition unit that acquires, after processing of a film formed on a substrate is performed by driving a substrate processing device under processing conditions including a variation condition indicating the relative position of a nozzle to the substrate that varies as time elapses, a first processing amount indicating a film thickness difference before and after the processing of the film; a conversion unit that converts the variation condition and a condition among the processing conditions other than the variation condition into processing state data indicating the state of processing in each of a plurality of divided regions obtained by concentrically dividing the upper surface of the substrate; and a predictor generation unit that performs machine learning of learning data comprising the processing state data and the first processing amount corresponding to the processing conditions to generate a learning model for estimating a second processing amount.
This learning device includes: an experimental data acquisition unit that acquires a first processing amount indicating the difference in film thickness between before and after processing of a coating film, after the coating film has been processed by driving, under processing conditions including a fluctuating condition that fluctuates over time, a substrate processing device for processing the coating film by supplying a processing liquid to a substrate on which the coating film is formed; and a model generation unit that performs machine learning of training data including the fluctuating condition and the first processing amount corresponding to the processing conditions, and generates a learning model for inferring a second processing amount indicating the difference in film thickness between before and after processing of the coating film formed on the substrate prior to the coating film processing by the substrate processing device. The learning model includes a first convolutional neural network.
This learning device comprises: an experimental data acquisition unit that acquires a first processing amount indicating a film thickness difference before and after processing of a film formed on a substrate, after the film is processed by driving a substrate processing apparatus under processing conditions including a variation condition that indicates the relative position of the nozzle that varies with respect to the substrate over time; a first conversion unit that converts the variation conditions into compression data that indicates an operation amount regarding the nozzle corresponding to each of a plurality of movement intervals that are obtained by dividing the range of movement of the nozzle into a number smaller than the number of data items of the variation conditions in a scan period between the start and end of a nozzle operation; and a predictor generation unit that performs machine learning on learning data including the compression data and the first processing amount corresponding to the processing conditions, to generate a learning model for predicting a second processing amount.
In this classification method, first, a three-dimensional embryonic image (D2) is acquired by optical coherence tomography. Then, in the three-dimensional image (D2), a blastomere area occupied by each blastomere and a fragmentation area occupied by fragmentation are extracted. Then, the volume of each of the blastomere areas and the volume of the fragmentation area are calculated. In succession, a first index value (P1) indicating a variation of the volume of the blastomere in the embryo is calculated on the basis of the volume of each of the blastomere areas. In addition, a second index value (P2) indicating a ratio of the fragmentation in the embryo is calculated on the basis of the volume of the fragmentation area. Then, the embryo is classified on the basis of the first index value (P1) and the second index value (P2). Accordingly, the embryo in a cleavage stage can be quantitatively classified on the basis of the three-dimensional image (D2).
C12Q 1/04 - Determining presence or kind of microorganism; Use of selective media for testing antibiotics or bacteriocides; Compositions containing a chemical indicator therefor
This gradient light interference microscope (1) includes an incidence path (30) in which light is made incident from a light source (20) to a sample arrangement position (40), and an emission path (50) in which transmitted light or reflected light emitted from the sample arrangement position (40) is made incident on an imaging element (60). The incidence path (30) has a first polarizing double-image prism (32) that splits incident light into a first polarized wave and a second polarized wave orthogonal to each other, and a condenser lens (33), in the stated order. The emission path (50) has an objective lens (51), a second polarizing double-image prism (52), a branching mechanism (56) that branches a composite beam emitted from the second polarizing double-image prism (52) into a plurality of paths, a phase delay mechanism (58) that causes mutually different phase delays in each second polarized wave of the plurality of branched beams, and a polarizing plate (72), in the stated order. By branching a light wave and applying a phase delay to each branch, an image can be captured for a plurality of phase delay amounts simultaneously, and image capture time can be shortened.
A substrate processing apparatus 1 wherein an orientation change region R3 is provided between a transfer block 5 and a batch processing region R1, a sheet substrate transport region R4 is adjacent to the transfer block 5 and the orientation change region R3, and a sheet processing region R5 is adjacent to the sheet substrate transport region R4. A center robot CR of the sheet substrate transport region R4 transports a substrate between a second orientation change mechanism 35 of the orientation change region R3, sheet processing chambers SW1 and SW2 of the sheet processing region R5, and a buffer unit 27. The center robot CR comprises a horizontally movable hand 37A that holds a horizontally oriented substrate, and a lifting table 41 that vertically moves the hand 37A, the position of the lifting table 41 being fixed in a horizontal direction XY.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
13.
ADDITIVE MANUFACTURING DEVICE AND ADDITIVE MANUFACTURING METHOD
In this additive manufacturing device (1), a control unit (5) controls a material holder (3) and an optical head (2) on the basis of design data pertaining to an additively manufactured object to thereby repeatedly carry out a process for supplying an additive manufacturing material (91) onto a stage (341), scanning a multi-spot beam in a prescribed scanning direction on a layer (92) on which drawing is to be performed, the layer (92) being the surface layer of the supplied additive manufacturing material (91), and then melting the additive manufacturing material (91) in a region irradiated with light and drawing a pattern. Non-drawing regions, with respect to which drawing is not indicated in the design data, include a narrow non-drawing region in which the scan-direction size is equal to or less than a correction threshold value. The control performed by the control unit suppresses irradiation with light on a narrow-part-adjacent region, which is a portion within a drawing region that is adjacent to a narrow non-drawing region, drawing being indicated in the design data with respect to the drawing region. This makes it possible to precisely form an additively manufactured object.
B33Y 30/00 - ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING - Details thereof or accessories therefor
B33Y 50/02 - Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
B29C 64/153 - Processes of additive manufacturing using only solid materials using layers of powder being selectively joined, e.g. by selective laser sintering or melting
Provided is a technology with which it is possible to suppress ink adhering to a nozzle surface of an ejection head from solidifying after a purge operation. A printing device (3) comprises an ejection head (H) that ejects ink from a nozzle (Hc), a cleaning block (7) that removes ink adhering to an ink ejection surface (Hb1) of the ejection head (H), a control unit (391) capable of executing a purge step (S101) and an ink removal step (S104), and an input device (396) for inputting commands to the control unit (391). The control unit (391) is capable of executing a first input determination process of determining whether input of a first command indicating execution of the purge step (S101) has been received via the input device (396). If the control unit (391) determines that the input of the first command has been received through the first input determination process, the control unit executes a maintenance process including the purge step (S101) and the ink removal step (S104).
Provided is a substrate processing device which has improved throughput by increasing the number of provided single-wafer type chambers while suppressing the size of the device. The present invention makes it possible to stack single-wafer type chambers in the vertical direction, and thus can provide a substrate processing device in which a larger number of single-wafer type chambers are mounted, even if the floor surface area is the same as that of a conventional device. Additionally, if a mechanism for carrying a substrate W into a single-wafer type chamber (drying chamber 37) and a mechanism for carrying the substrate W out from the drying chamber 37 are independently provided, it is possible for substrate conveyance around the drying chamber 37 to be smooth. The present invention makes it possible to provide a substrate processing device 1 that has a high throughput while being small in size.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
16.
SUBSTRATE PROCESSING SYSTEM, SCHEDULE CREATING METHOD, STORAGE MEDIUM, AND SCHEDULE CREATING PROGRAM
The present invention provides a substrate processing system that is capable of suppressing usage amount of utility. A substrate processing system (1000) includes a substrate processing device (200) and a control device (300). The control device (300) creates a schedule (SK) for actions of the substrate processing device (200). The control device (300) includes a storage unit (303) and a control unit (304). The storage unit (303) stores a plurality of trained models for creating a plurality of schedules (SK) in which usage amount of utility differs from each other. The control unit (304) is capable of creating the plurality of schedules (SK) on the basis of the plurality of trained models. Each of the plurality of trained models is built by executing reinforcement learning on the basis of input data at the time of learning. The input data at the time of learning includes count information, recipe information, and utility information (RS). The utility information (RS) indicates the usage amount of utility used in each action included in procedures of the actions of the substrate processing device (200).
Provided is a substrate processing apparatus the throughput of which is improved by reviewing the configuration of an apparatus having a batch-type module and a sheet-type module. In a sheet processing region R2 related to sheet processing of a processing block 9 of the present invention, a buffer section 31 is provided in which both a first transfer mechanism HTR and a center robot CR can perform delivery of a substrate. Thus, the first transfer mechanism HTR can deliver, through the buffer unit 31, both a processed substrate W and an un-processed substrate at once. Thus, the potential of the first transfer mechanism HTR can be exploited, making it possible to provide a substrate processing apparatus 1 having high throughput.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
This 3D molding device (1) comprises a laser light source (21), a diffractive optical modulator (23) having a plurality of modulating elements, a lighting optical system (22), a first projection optical system (241) forming an intermediate image of the optical modulator (23), a second projection optical system (242) for forming a projection image of the intermediate image on a projection surface (95) of a modeling material (91) constituting a processing region, and a layer forming mechanism (12). The second projection optical system (242) scans the projection image on the projection surface (95). The layer forming mechanism (12) forms a new material layer (92) on the projection surface (95) onto which the projection image was scanned to form a new projection surface (95). The projection magnification of the first projection optical system (241) is smaller than the projection magnification of the second projection optical system (242).
B33Y 30/00 - ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING - Details thereof or accessories therefor
B29C 64/153 - Processes of additive manufacturing using only solid materials using layers of powder being selectively joined, e.g. by selective laser sintering or melting
Provided are a substrate processing method and a substrate processing apparatus that make it possible to selectively remove, in a satisfactory manner, a self-assembled monolayer that is provided to the surface of a substrate. The present invention is a substrate processing method for processing a substrate W that has a self-assembled monolayer 14 provided to a surface of the substrate, the method including: an ultraviolet light irradiation step S104 for irradiating the self-assembled monolayer 14 with ultraviolet light in an oxygen-atom-containing atmosphere, thereby reducing the water repellency of the surface of the self-assembled monolayer 14; and a removal step S105 for bringing an aqueous self-assembled monolayer removal solution into contact with the self-assembled monolayer 14 after the ultraviolet light irradiation step, thereby selectively removing the self-assembled monolayer 14.
A substrate processing device (100) comprises: a substrate processing unit (10); piping (32); a filter unit (140); and a pump (114). The substrate processing unit (10) processes a substrate (W). The piping (32) flows a processing liquid to the substrate processing unit (10). The filter unit (140) is disposed at the piping (32). The filter unit (140) includes a filter (141) that traps particles in the processing liquid. The pump (114) applies pressure to a liquid containing the processing liquid, thus causing the liquid to pass through the filter (141). When the substrate is being processed, the pump (114) applies pressure to the processing liquid so that the pressure of the processing liquid with respect to the filter (141) achieves a first pressure. When the substrate is not being processed, the pump (114) applies pressure to the liquid so that the pressure of the liquid with respect to the filter (141) achieves a second pressure, which is higher than the first pressure.
This substrate processing apparatus (100) comprises: a substrate holding part (20) for holding and rotating a substrate (W), and a mixture supply part (50) for supplying, to the substrate (W) rotated by the substrate holding part (20), a sulfuric acid hydrogen peroxide mixture in which sulfuric acid and hydrogen peroxide are mixed. The mixture supply part (50) supplies the sulfuric acid hydrogen peroxide mixture to the substrate at a first flow rate during a first period, and supplies the sulfuric acid hydrogen peroxide mixture to the substrate at a second flow rate that is less than the first flow rate during a second period after the first period. The proportion of the sulfuric acid of the sulfuric acid hydrogen peroxide mixture in the second period is smaller than the proportion of the sulfuric acid of the sulfuric acid hydrogen peroxide mixture in the first period.
According to this invention, in an upper surface protective heating mechanism for heating a substrate while covering the upper surface of the substrate held by a substrate holding unit, a base block, a first underblock, and a second underblock are combined, and a gap region and an annular outlet are formed. A gas flowing through the gap region is heated by a peripheral edge heating unit, and is then supplied from the annular outlet to the vicinity of the peripheral edge of the upper surface of the substrate. The peripheral edge heating unit can increase, within a short time, not only the temperature of the gas but also the temperature of the peripheral edge of the substrate for heating the peripheral edge of the upper surface of the substrate to a temperature suited for substrate treatment.
A substrate processing apparatus 1 comprises a transfer block 5, a processing block 7, and a buffer unit 33. The transfer block 5 comprises a bulk transport mechanism HTR for storing a substrate W into a carrier C, and a first attitude transform mechanism 15 for transforming the substrate W into a vertical attitude. The processing block 7 comprises a batch processing region R1, a single processing region R3, a single substrate transport region R2, and a batch substrate transport region R4. The batch processing region R1 is provided with batch processing baths BT1 to BT6, and a second attitude transform mechanism 31 for transforming the substrate W into a horizontal attitude. The single processing region R3 is provided with a single processing chamber SW1, for example. The single substrate transport region R2 is provided with a center robot CR. The batch substrate transport region R4 is provided with a first transport mechanism WTR1. The bulk transport mechanism HTR transports the substrate W to the first attitude transform mechanism 15, and transports the substrate W from the buffer unit 33.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
This film formation device (100) comprises a chamber (1), a mounting stand (21), and a fluid bed (3). The fluid bed (3) is provided to a position, within the chamber (1), that faces a first main surface of a substrate (W) that is mounted on the mounting stand (21). The fluid bed (3) has a plasma chamber (4b), a plasma source (5), a plurality of first outflow ports (4c), a gas flow path (6b), and a plurality of second outflow ports (6c). The plasma source (5) turns a first raw-material gas into plasma in the plasma chamber (4b). The first outflow ports (4c) are arranged in a two-dimensional array in an overlapping region that overlaps the first main surface of the substrate W as seen in plan view. An active species that is derived from the first raw-material gas flows from the first outflow ports (4c) toward the first main surface of the substrate W. The plurality of second outflow ports (6c) are arranged in a two-dimensional array at different positions than the plurality of first outflow ports (4c) in the overlapping region. A second raw-material gas flows from the plurality of second outflow ports (6c) toward the first main surface of the substrate W.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Provided is a technology that makes it possible to relax, in a device that captures images of a workpiece using mirrors, restrictions on mirror arrangement while maintaining an image capture angle and an image capture magnification. An imaging device (13) captures images of a workpiece (9) from a plurality of directions. The imaging device (13) comprises: a single camera (20); a mirror (41) located on a first optical path (LP1) from the workpiece (9) to the camera (20); and mirrors (51) and (52) located on a second optical path (LP2) from the workpiece (9) to the camera (20), the second optical path (LP2) being different from the first optical path (LP1). On the second optical path (LP2), the mirror (52) is located between the workpiece (9) and the mirror (51). The optical path length of the first optical path (LP1) is equal to the optical path length of the second optical path (LP2).
The present invention relates to an optical device that shifts the path of light, and an exposure device and exposure method that use said optical device. The purpose of the present invention is to adjust the shift amount while minimizing any increase in astigmatic difference with a simple and compact configuration. This optical device shifts the path of input light in a shift direction that is orthogonal to the direction of incidence of the light. The optical device includes a shift optical element (111) that is a parallel plane plate in which input light is incident on one side of mutually parallel surfaces and output light is emitted from the other side, a correction optical element (113) placed in the optical path of the input light or the optical path of the output light to correct astigmatic difference appearing in the output light, and a drive unit (114) that causes the shift optical element (111) to rotate to change the shift amount and displaces the correction optical element (113) in conjunction with the shift optical element (111).
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The present invention relates to an exposure method and an exposure device, the purpose of which is to enable exposure in both acceleration and deceleration periods during relative movement between an exposure part and a substrate holding part, and to thereby improve the takt time of the exposure process. An exposure part that outputs a light beam and a substrate holding part that holds a substrate are moved relative to each other to thereby scan an incident position of an output light beam on the substrate. The relative movement speed between the exposure part and the substrate holding part is calculated on the basis of a signal generated in conjunction with the relative movement, and exposure is performed by causing the laser beam to enter the substrate while changing the light quantity of the light beam in multiple stages at a prescribed control period. The control period and the maximum light quantity of the light beam are modified in accordance with the calculated relative movement speed.
A substrate processing device (100) comprises a substrate processing unit (10), a pipe (32), a filter (141), an upstream-side pipe (151), a downstream-side pipe (161), and a removal liquid supply unit (165). The substrate processing unit (10) processes a substrate W. The pipe (32) circulates a processing fluid to the substrate processing unit (10). The filter (141) is disposed in the pipe (32). The upstream-side pipe (151) is connected to the pipe (32) on the upstream-side of the filter (141). The downstream-side pipe (161) is connected to the pipe (32) on the downstream-side of the filter (141). The removal liquid supply unit (165) supplies a bubble removal liquid to one of the upstream-side pipe (151) and the downstream-side pipe (161). The substrate processing device (100) allows the bubble removal liquid to pass from one of the upstream-side pipe (151) and the downstream-side pipe (161) to the other of the upstream-side pipe (151) and the downstream-side pipe (161) via the filter (141).
This light irradiation device, which combines laser light beams generated using a plurality of light sources into a single beam, suppresses the dissipation of light emitted from a plurality of laser light sources without increasing the light path length. In this light irradiation device and exposure device an irradiation optical system has: an incidence angle conversion unit that includes a first lens and a second lens arranged in a positional relationship forming a beam expander; a divided lens unit that has a plurality of lenses arranged in a direction along a plane and perpendicular to the optical axis of the incidence angle conversion unit, and that, by means of the plurality of lenses, divides the light emitted from the incidence angle conversion unit; a light path length difference generation unit that has a plurality of light-transmitting parts having mutually different light path lengths and arranged in a direction perpendicular to the optical axis, and that causes the light that has passed through the plurality of lenses to be incident respectively to the plurality of light-transmitting parts; and a condensing lens unit that causes the irradiation regions of the light emitted from the plurality of light-transmitting parts to overlap on a surface to be irradiated.
Provided is a two-fluid discharge device comprising a two-fluid nozzle, a gas supply unit, a liquid supply unit, and a control unit. In the present invention, the two-fluid nozzle can discharge a mixed liquid obtained by mixing a liquid and a gas. In the two-fluid nozzle, the gas is supplied from the gas supply unit. Moreover, in the two-fluid nozzle, the liquid is supplied from the liquid supply unit. When the control unit controls the gas supply unit and the liquid supply unit to stop the discharge of the mixed liquid from the two-fluid nozzle, the control unit stops the supply of the liquid and then stops the supply of the gas.
According to the present invention, a certain amount of IPA is supplied from a processing liquid nozzle to a substrate after a cleaning process. The liquid level of the IPA is gradually decreased by means of preliminary drying and when the liquid level of the IPA coincides with the upper end of a pillar of a pattern that is formed on the substrate, the surface of the substrate is irradiated with flash light from a flash lamp so as to instantaneously vaporize the remaining IPA. By irradiating the surface of the substrate with flash light with high intensity for an extremely short period of irradiation time, the drying time which is necessary for removing the processing liquid from the surface of the substrate from the time when the capillary force started to act on the pattern becomes shorter than the collapse time which is necessary for causing the pattern to collapse from the time when the capillary force started to act on the pattern. Consequently, pattern collapse can be reliably suppressed even if the pattern has a large aspect ratio.
This substrate processing apparatus performs electrolytic etching on the peripheral edge of a substrate (9). A first etching head (611) radially faces the peripheral edge of the substrate (9) in a part of the circumference around a rotation axis. The first etching head (611) holds an electrolytic solution (610) therein. The first etching head (611) has an insertion opening (615) into which the peripheral edge of the substrate (9) is inserted. A first head moving mechanism moves the first etching head (611) forward and backward relative to the peripheral edge of the substrate (9). An anode is in electrical contact with a conductive film (93). A cathode (66) is in electrical contact with the electrolytic solution (610). A power supply applies a voltage between the anode and the cathode (66) in a state in which the peripheral edge of the substrate (9) is inserted into the first etching head (611) through an insertion port (615) to be in contact with the electrolytic solution (610). As a result, the etching width of the conductive film (93) can be adjusted with high precision.
In this invention, an outer flow adjustment member adjusts flow of a gas passing between an upper sealing member and a lower sealing member and causes the gas to flow downward along an outer surface of the lower sealing member. Thus, a so-called air curtain is formed so as to surround a treatment space. Moreover, when the formation of an atmosphere separation space is eliminated, an inner flow adjustment member for adjusting flow of a gas passing through the inside of the lower sealing member and causing the gas to flow in the treatment space raises and lowers integrally with the lower sealing member while the outer flow adjustment member is attached to the upper sealing member and remains at a fixed position. This generates a pressure difference between outlet sides of the outer flow adjustment member and the inner flow adjustment member and increases the flow rate of a gas flowing downward from the outer flow adjustment member along the outer surface of the lower sealing member. That is, the air curtain is strengthened.
This invention pertains to a substrate treatment technology for performing a prescribed substrate treatment on a substrate by supplying a treatment liquid to the substrate held by a rotating substrate holding unit, and collecting droplets of the treatment liquid flung out from the substrate during the substrate treatment. In this device, a cup-rinsing liquid is directly supplied to a rotary cup part from an inner portion of the rotary cup part while the rotary cup part rotates about the rotation axis. Accordingly, the treatment liquid is removed from the rotary cup part while the use amount of the cup-rinsing liquid is reduced, whereby the rotary cup part can be kept clean.
Provided is a substrate processing apparatus of which throughput is improved through the review of the configuration of an apparatus having a batch-type module and a sheet-type module. In a sheet processing region R2 of a processing block 9 of the present invention, the region relating to sheet processing, a buffer section 31 in which both a first transfer mechanism HTR and a center robot CR can perform delivery of a substrate. Thus, the first transfer mechanism HTR can deliver, through the buffer unit 31, both a processed substrate W and an un-processed substrate at once. Thus, the potential of the first transfer mechanism HTR can be exploited, making it possible to provide a substrate processing device 1 having high throughput.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
36.
CONNECTION PIPING, METHOD FOR PREPARING PERFUSION DEVICE, AND PERFUSION METHOD
Provided is connection piping (1) for temporarily connecting to a perfusion device (100) that perfuses an organ, the connection piping (1) having: a first pipe (61) having, at one end thereof, a first connection part (611) for connecting to a first supply pipe (31); a second pipe (62) having, at one end thereof, a second connection part (621) for connecting to second supply pipe (41); and a third pipe (63) that, at one end thereof, is communicably connected either directly or indirectly to the other end of the first supply pipe (61) and the other end of the second supply pipe (62), and that has, at the other end thereof, a third connection part (631) for connecting to a recovery pipe (51). Attaching such connection piping 1 to a perfusion device (100) and performing a priming process makes it possible to reduce the risk of contamination with bacteria during the priming process in a perfusion device (100) that has two piping systems as inflow routes and one piping system as an outflow route.
In a substrate treatment device according to the present invention, in an internal space of a chamber, a substrate holding part is disposed at a treatment position offset from the center of the internal space toward a conveyance opening side. The conveyance distance and conveyance time of a substrate along a conveyance path are shortened by the offset amount, and power is saved. In addition, a nozzle movement part is configured to move a treatment liquid discharge nozzle in a first radial direction, which is inclined with respect to a first virtual horizontal line, among radial directions of the substrate. Accordingly, the arrangement relationship among the substrate holding part, a nozzle head, and the nozzle movement part in the chamber is optimized, and the substrate treatment can be executed preferably without using a chamber having a uselessly large inner space.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
38.
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
This substrate treatment method comprises: a step (S1) for immersing a substrate (W) in an alkaline treatment liquid (L); and a step (S2) for etching, by means of the treatment liquid (L), a polysilicon layer (Wc) filling a columnar recess (Wb) which extends roughly perpendicularly to the main surface (Wa) of the substrate (W). In the step (S2), bubbles generated in the recess (Wb) are removed.
A light detection and ranging (LIDAR) system incorporates a scanning system with random access pointing. The scanning system has a light source that generates a coherent light, a microelectro-mechanical system (MEMS) phased-array that steers the coherent light in a vertical direction, and a resonant scanner that scans the coherent light in a horizontal direction. The coherent light is projected onto a far field scene. The MEMS phased-array steers the coherent light to point the projected light on selected spots on the far field scene in random access fashion.
A channel chip (11) comprises a substrate (21), fluid wells (FW), a pair of first electrodes (33a), (33b), and a pair of second electrodes (43a), (43b). A sample fluid and a reference fluid can be injected into the fluid wells (FW). By applying a control voltage, the pair of first electrodes (33a), (33b) can cause a dielectrophoretic force to act on dielectric particles (P1) contained in the sample fluid which has been injected into the fluid wells (FW). The pair of second electrodes (43a), (43b) are arranged at locations different from those of the pair of first electrodes (33a), (33b). The control voltage applied between the pair of first electrodes (33a), (33b) is corrected on the basis of the impedance between the pair of second electrodes (43a), (43b) that has been measured by means of the reference fluid which has been injected into the fluid wells (FW).
C12M 1/00 - Apparatus for enzymology or microbiology
G01N 37/00 - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES - Details not covered by any other group of this subclass
41.
SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD
This substrate cleaning device comprises: a substrate rotation/retention unit that rotates a substrate while retaining the substrate; a first cleaning brush that has a first cleaning surface inclined so as to allow contact with a first bevel region of the substrate retained by the substrate rotation/retention unit; a first drive unit that is configured so as to shift the first cleaning brush between a first contact state, in which the first cleaning surface is in contact with the first bevel region of the substrate rotated by the substrate rotation/retention unit, and a first separated state, in which the first cleaning surface is separated from the first bevel region of the substrate rotated by the substrate rotation/retention unit; and a control unit that controls the first drive unit so that, if a first condition determined in advance has been met, the position of contact of the first cleaning surface with the first bevel region in the first contact state is changed.
This substrate processing method involves processing a substrate having, on a surface thereof, a metal layer and a hard mask laminated on the metal layer. The method includes: a step in which the metal layer exposed by the hard mask is patterned through dry etching; a step in which residue produced on the substrate surface by the dry etching is irradiated with ultraviolet light; and a step in which, after the ultraviolet light irradiation, the residue from the substrate is removed by wet treatment involving supplying a residue removal liquid having a pH (hydrogen ion index) of 7-14 to the substrate surface. The residue includes one or more compounds among a metal halide compound, an organometallic substance, and a metal oxide containing the main constituent metal element of the metal layer.
An analysis assistance method for providing assistance in analysis of stained images of a specimen, the method comprising: a step for preparing a plurality of stained images that are obtained by staining a single specimen using different types of staining, and that correspond to the respective types of staining (step S11); a step for dividing each of the stained images into a plurality of divisional regions in a predetermined division form (step S13); a step for obtaining a uniformity level indicating the uniformity of a stained state in each of the divisional regions in the respective stained images using a trained model generated through machine learning (step S14); and a step for determining whether or not each of the divisional region is suitable for a predetermined analysis method, on the basis of the uniformity level in each of the stained images (step S15). As a result, a region that is suitable for analysis and that is common to a plurality of stained images can be accurately presented.
The present invention relates to a method for substrate treatment, a device for substrate treatment, and a substate treatment liquid. In the method for substrate treatment, a substrate W including a first layer G is treated. A second liquid mixture P2 comprises an etchant and iodide ions (I-). The method for substrate treatment includes a first preparation step and an etching step. In the first preparation step, oxygen and/or ozone is added to the second liquid mixture P2. In the etching step, the second liquid mixture P2 prepared in the first preparation step is fed to the substrate W. In the etching step, the first layer G is etched.
This substrate cleaning device is provided with a spin chuck, a liquid supply mechanism, a brush pressing mechanism, and a brush. The spin chuck rotates a substrate while holding the same. The liquid supply mechanism supplies a cleaning liquid onto one surface of the substrate being held and rotated by the spin chuck. The brush pressing mechanism presses the brush onto the one surface of the rotating substrate during a predetermined pressing period. The liquid supply mechanism supplies the cleaning liquid onto the one surface of the substrate at a predetermined reference flow rate before the pressing period. Further, the liquid supply mechanism supplies the cleaning liquid onto the one surface of the substrate at a smaller flow rate than the reference flow rate, or stops the supply of the cleaning liquid, during at least a part of the pressing period.
A flow path chip (1) comprises: a plurality of filter layers (40); a first common supply path (5); a common flow path (7); and a dielectrophoretic layer (50). The plurality of filter layers (40) each have an HDF (3). The first common supply path (5) supplies a sample liquid (L1) to the HDFs (3) of the plurality of filter layers (40). The common flow path (7) allows a liquid to pass therethrough after the liquid passed through the plurality of HDFs. The dielectrophoretic layer (50) includes an electrode (51) and an electrode (53) that cause dielectric particles, which are included in the liquid that passed through the common flow path (7), to migrate dielectrophoretically. The plurality of filter layers (40) and the dielectrophoretic layer (50) are laminated together.
B03C 5/00 - Separating dispersed particles from liquids by electrostatic effect
C12M 1/00 - Apparatus for enzymology or microbiology
G01N 37/00 - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES - Details not covered by any other group of this subclass
A separation device (100) comprises a main flow path (11), a plurality of sub-flow paths (13), a control liquid flow path (21), a downstream-side joining path (23), and a common flow path (25). Through the main flow path (11), a sample liquid (L1) containing particles flows. The plurality of sub-flow paths (13) branch from the main flow path (11). The control liquid flow path (21) joins a downstream part of the main flow path (11) relative to the sub-flow paths (13), and allows a control liquid (L3) to flow therethrough. At the downstream-side joining path (23), the main flow path (11) and the control liquid flow path (21) join. The common flow path (25) is connected to the downstream-side joining path (23). Through the common flow path (25), at least particles with a diameter larger than a predetermined diameter and the control liquid (L3) flow.
C12M 1/00 - Apparatus for enzymology or microbiology
G01N 37/00 - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES - Details not covered by any other group of this subclass
48.
SUBSTRATE PROCESSING DEVICE AND CONVEYANCE TEACHING METHOD
The present invention enables teaching to be executed without introducing a teaching substrate from outside of a substrate processing device. A substrate processing device according to the present invention includes a processing chamber, a conveying robot that conveys a substrate that is an object of processing in the processing chamber, a teaching substrate to teach the conveying robot regarding a position of a substrate, and a storage location for storing the teaching substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
OASSAOO is the reduction potential of the oxidizing agent. It is preferable that the organic catalyst include one or more kinds of a redox organic compound and a redox organic polymer.
This invention relates to a centering device, a centering method and a board processing device using the centering technique associated therewith wherein the center of a disciform board mounted on the upper surface of a board supporting part can be caused to coincide with the center of the board supporting part with high precision. This invention comprises: a gas supplying unit that supplies a gas between the board mounted on the upper surface of the board supporting part and the board supporting part; and a gas controlling unit that controls the gas supplying unit such that the gas intervenes between the board and the board supporting part during the positioning of the board. According to this invention, the frictional force between the lower surface of the board and the upper surface of the board supporting part is reduced because of the intervention of the gas between the board and the board supporting part. As a result, the influence of the frictional force is suppressed, thereby improving the centering precision.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
51.
CLOCK SYNCHRONIZATION METHOD AND MANUFACTURING DEVICE
This clock synchronization method for synchronizing clocks assigned to a plurality of imaging data comprises: a) a process in which a plurality of cameras are used to image an imaging target, thereby acquiring imaging data for each camera; b) a process in which event images (EI1 to EI3) in which a predetermined event is imaged are detected from the imaging data for each piece of imaging data; and c) a process in which the clocks assigned to the plurality of pieces of imaging data are synchronized on the basis of the clocks assigned to the respective event images (EI1 to EI3). In this way, the clocks among a plurality of pieces of imaging data can be synchronized without communicating with an external network.
Provided is a technique that can reduce an increase in device size in a device that conveys a lens to an imaging position. A lens inspection device comprises a lens-to-be-inspected holding part (41), a camera (51b), a camera support part (53b), and a holding part movement mechanism (45). The lens-to-be-inspected holding part (41) holds a lens (9) to be inspected. The camera (51b) captures an image of the lens (9) to be inspected. The camera support part (53b) supports the camera (51b). The holding part movement mechanism (45) moves the lens-to-be-inspected holding part (41) between an imaging position (P1) at which the camera (51b) captures an image of the lens (9) to be inspected and a standby position (P2) that is separated in a -X direction from the imaging position (P1). The camera support part (53b) extends in the -X direction and a +Y direction.
The present invention determines damage and defects of substrates on a per-processing-tank basis. This substrate processing method is for controlling a substrate processing device, wherein the substrate processing device includes: a processing tank that holds a processing solution into which a plurality of substrates are immersed and subjected to batch processing; and a substrate holding mechanism that has the function of holding the plurality of substrates en bloc, and that has a first function for removing the plurality of substrates from the processing solution and a second function for immersing the plurality of substrates into the processing solution. The method determines the presence of a deficiency of the plurality of substrates in the processing that uses the processing tank, on the basis of a load applied to the substrate holding mechanism when performing the first function.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
54.
SUBSTRATE UNDERSIDE DRYING DEVICE AND SUBSTRATE WASHING DEVICE PROVIDED WITH SAME
A substrate washing device according to the present invention is provided with a first substrate-retaining part and a drying device. The drying device includes a first gas-jetting unit and a second gas-jetting unit. The first gas-jetting unit progresses in a drying progression direction which is parallel to the substrate while jetting gas from below at the substrate which is retained by the first substrate-retaining part. When the first gas-jetting unit is jetting gas at the substrate, the second gas-jetting unit jets gas from above the substrate toward a portion of the outer edge of the substrate in the plan view. A gas collision region which is on the underside of the substrate and receives gas from the first gas-jetting unit is formed in a belt shape extending continuously in a direction orthogonal to the drying progression direction. The central portion of the gas collision region is located on the back end of a first gas-collecting unit in the progression direction.
Provided is technology with which it is possible to extend the ranging distance when performing sensing and ranging using light. The sensing device (100) comprises a transmission unit for transmitting light to a scan region (A) and a reception unit for receiving light reflected by an object located in the scan region (A). The transmission unit is provided with: a light source (11) that emits light; a light guide unit (12) for modulating the phase of the light to guide the light in a first direction (Ax) and cause the light to scan the scan region (A); and a shaping part (13) for shaping the light so that the light projected onto the scan region (A) forms a deformed line beam (Ld) in which a plurality of collimated beams (C) are arranged, with gaps therebetween, along a second direction (Ay) intersecting the first direction (Ax).
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01C 3/06 - Use of electric means to obtain final indication
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
A processing liquid is photographed while supplying the processing liquid to a substrate W, which is an object to be processed. At that time, a pattern light having a light and dark pattern is irradiated from an irradiation unit (70), and a reflected image or a projected image of the pattern light on the surface of the processing liquid is photographed using a camera (80). The flow state of the processing liquid is evaluated on the basis of photograph results by the camera (80). The processing liquid is photographed together with the pattern light, and it is therefore possible to detect minute changes in the flow state of the processing liquid on the basis of distortions in the pattern light.
This organ holding tool (1) has a body (10) made of a soft material, and a recess (20) formed in the top surface of the body (10). The body (10) is solid. An organ (9) extracted from a donor is first held in the recess (20) of the organ holding tool (1). Next, the organ holding tool (1) and the organ (9) are subjected to fluoroscopic imaging. Thereafter, the image obtained by the fluoroscopic imaging is subjected to density correction with reference to the body (10). The foregoing makes it possible to hold the organ (9) while suppressing damage to the organ (9) when performing fluoroscopic imaging on the organ (9), and to quantitatively evaluate the state of the organ (9).
A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
The present invention relates to a plating apparatus and a plating method, by each of which at least one main surface of a rectangular substrate is plated. A plating apparatus according to the present invention is provided with: a process tank in which a plating liquid is retained; an anode electrode which is in contact with the plating liquid in the process tank; and a substrate holding unit which holds a substrate in a horizontal posture with one main surface facing up within the process tank. The substrate holding unit has a plurality of chuck mechanisms, each of which is provided with a cathode electrode and holds the substrate, while having the cathode electrode in contact with the one main surface of the substrate; and at least one chuck mechanism is arranged on each one of two sides, which face each other, among the sides of the substrate. Consequently, even a large substrate can be held in an appropriate posture and a uniform plating film can be obtained.
In the present invention, reduction in accuracy of state detection for a target is suppressed even when there is a limit on a direction in which an image can be taken. A state detection method according to a technology disclosed in the present application comprises: a step for imaging, by an imaging unit, at least one imaging target related to processing of a substrate and outputting an image; a step for applying, to the image, a filter prepared in advance in accordance with the imaging target; and a step for detecting the state of the imaging target on the basis of the image to which the filter has been applied. A filter coefficient of the filter applied to the image is corrected on the basis of a positional relationship between the imaged imaging target and the imaging unit.
In the present invention, a first trained regression model is constructed by machine learning, using a condition relating to light radiation as an input variable and an irradiance distribution calculated by an optical simulation as an output variable. A second trained regression model is constructed by machine learning, using a processing condition including the irradiance distribution as an input variable and a temperature distribution of a monitor wafer that has actually been measured as an output variable. A composite function is derived by combining the first trained regression model created on the basis of an optical simulation and the second trained regression model created on the basis of actual measurements. The temperature distribution that will occur in a semiconductor wafer at the time of light radiation heat treatment is predicted on the basis of the composite function.
The purpose of the present invention is to provide a substrate processing method capable of more efficiently detaching or removing a resist from a substrate. This substrate processing method comprises: a step for supplying hydrogen peroxide to the surface of a substrate W on which a resist pattern has been formed (fig. 3B); and a step for supplying ozone gas to the hydrogen peroxide that is in contact with the substrate W (fig. 3C to 3E).
This substrate processing method and this substrate processing device, by heating fluoride-containing phosphoric acid which is phosphoric acid that contains fluoride, maintains the fluoride-containing phosphoric acid at a constant etching temperature that either matches or approximates an isokinetic temperature at which, at the concentration of fluoride in the fluoride-containing phosphoric acid, the etch rate of a silicon oxide film O1 and the etch rate of a silicon nitride film N1 are equal to one another. By bringing the fluoride-containing phosphoric acid at the etching temperature into contact with the silicon oxide film O1 and the silicon nitride film N1, which have been formed on a substrate W, this method and device etch the silicon oxide film O1 and the silicon nitride film N1 with the fluoride-containing phosphoric acid.
This substrate treatment device comprises a treatment tank (110), a treatment liquid supply unit (150), a detection unit (210), an acquisition unit, a calculation unit, and a supply control unit. The detection unit (210) detects the concentration of an etching treatment liquid (LQ) in the treatment tank (110) to acquire the detected concentration. The acquisition unit acquires the degree of depletion of the etching treatment liquid (LQ). The calculation unit calculates a concentration for the etching treatment liquid (LQ) by referring to the degree of depletion of the etching treatment liquid and depletion degree information. The supply control unit executes supply control so that the detected concentration from the detection unit (210) matches the concentration for the etching treatment liquid (LQ) calculated by the calculation unit. The depletion degree information indicates the relationship between the concentration of the etching treatment liquid (LQ) and the depletion degree of the etching treatment liquid (LQ).
Provided is a technology capable of measuring the impedance of a biomaterial by using a multi-electrode array device. This impedance measurement apparatus (1) comprises a measurement container (10), a plurality of first electrodes (31), a second electrode (32), a third electrode (33), a voltage application circuit (43), a current detection circuit (45), and a voltage detection circuit (47). The first electrodes (31) are disposed in an array shape on a bottom surface inside the measurement container (10). The second electrode (32) and the third electrode (33) are located inside the measurement container (10). The voltage application circuit (43) applies a voltage between each of the first electrodes (31) and the second electrode (32). The current detection circuit (45) detects a current flowing through each of the first electrodes (31). The voltage detection circuit (47) detects the voltage between each of the first electrodes (31) and the third electrode (33).
Provided is a technology capable of measuring the impedance of a biomaterial by using a multi-electrode array device. This impedance measurement apparatus (1) comprises a measurement container (10), a plurality of first electrodes (31), a second electrode (33), a voltage application circuit (43), a current detection circuit (45), and a voltage detection circuit (47). The plurality of first electrodes (31) are disposed in an array shape on a bottom surface inside the measurement container (10). The second electrode (33) is located inside the measurement container (10). The voltage application circuit (43) applies a voltage between each of the first electrodes (31) and the second electrode (33). The current detection circuit (45) detects a current flowing through each of the first electrodes (31). The voltage application circuit (47) detects a voltage between each of the first electrodes (31) and the second electrode (33).
A return pump 552 for liquid feed of ink from a recovery tank 531 to a supply tank 511 is provided, and in parallel with execution of a printing differential pressure generation, differential pressure generation assistance for liquid feed of the ink from the recovery tank 531 to a return pipe 551 by means of a return liquid delivery unit 55 is executed (step S112). As a result, in the recovery tank 531, the volume of an air layer Vra above a gas-liquid interface L2 expands, depressurizing the air layer Vra, and in the supply tank 511, the volume of an air layer Vfa above a gas-liquid interface L1 is compressed, pressurizing the air layer Vfa. This assists the generation of a differential pressure between the recovery tank 531 and the supply tank 511.
In this imaging method, the following steps are executed repeatedly and periodically: a first imaging step (S13) for imaging a sample using a first imaging method; a first analysis step (S14) for analyzing a first image acquired in the first imaging step (S13); and a determination step (S15) for determining whether an analysis result from the first analysis step (S14) satisfies a first condition. If it is determined in the determination step (S15) that the first condition is satisfied, the first imaging step (S13), the first analysis step (S14), and the determination step (S15) are temporarily stopped, and a second imaging step (S17) for imaging the sample using a second imaging method is executed. By periodically performing the first imaging step (S13) and the first analysis step (S14), a time-series variation in a biological sample can be appropriately ascertained, and the second imaging step (S17) can be performed at a necessary timing using an imaging method with which short-span or frequent imaging is difficult. This makes it possible for time-series variations in the biological sample to be observed appropriately.
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01N 33/483 - Physical analysis of biological material
68.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Provided are a substrate processing method and a substrate processing device capable of selectively forming a self‐assembled monolayer as a protective film while suppressing etching of a metal film on a substrate. A substrate processing method according to the present invention is for processing a substrate having, on a surface, a metal film formed region in which a metal film 1 is formed and a metal film non-formed region in which the metal film 1 is not formed, the method comprising: a dissolved oxygen concentration reduction step for reducing the dissolved oxygen concentration of a processing liquid containing a material for forming a self‐assembled monolayer 4; and a self‐assembled monolayer forming step for forming the self‐assembled monolayer 4 on the metal film 1 in the metal film formed region while suppressing oxidation of the metal film 1, by bringing the processing liquid into contact with at least the surface of the substrate after the dissolved oxygen concentration reduction step.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
This thermal treatment apparatus includes: a chamber that houses a semiconductor wafer W; a halogen heating unit and a flash heating unit that heat the semiconductor wafer; a plurality of sensors that measures parameters related to heating of the semiconductor wafer; a storage unit that stores data measured by the plurality of sensors; and an operation unit that predicts an output value from a first sensor among the plurality of sensors. The output value from the first sensor is predicted on the basis of data measured by the first sensor among the plurality of sensors and data measured by a second sensor having correlation with the first sensor.
A learning device according to the present invention comprises: an experimental data acquisition unit that acquires a processing amount indicating the difference in film thickness between before and after processing of a coating film formed on a substrate after a substrate processing device for processing a substrate by supplying a processing liquid onto a substrate on which a coating film is formed is driven under processing conditions including a fluctuation condition for fluctuation over time; a first compression unit that converts the fluctuation condition so as to reduce the rank thereof; and a predictor generation unit that uses machine learning of training data including a processing amount corresponding to a processing condition and a conversion result, which is obtained by the fluctuation condition being converted by the first compression unit, to generate a training model for inferring a processing amount indicating the difference in film thickness between before and after processing of a coating film formed on a substrate prior to being processed by the substrate processing device.
Provided is a method that allows for appropriate removal by SPM processing of residue or a residual film that is difficult to remove on a peripheral portion of a substrate. This substrate-processing method comprises: a first step of forming a protective film including an SOG film on the main surface of a substrate, the peripheral portion of the main surface not being covered by the protective film, and the region of the main surface on the inside of the peripheral portion being covered by the protective film; a second step of, after the protective-film-forming step, removing residue or a residual film on the peripheral portion by a processing solution including a mixture of sulfuric acid and hydrogen peroxide; and a third step of, after the residual film removal step, removing the protective film.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B05D 1/40 - Distributing applied liquids or other fluent materials by members moving relatively to surface
B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
B05D 7/00 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
72.
CIRCULATION DEVICE AND CIRCULATION DEVICE CONTROL METHOD
The present invention causes the temperature and/or flow rate of a treatment liquid to rapidly reach a desired value. A circulation device comprises: a first pipe into which flows a liquid from a storage tank that stores the liquid, and which is used for supplying the liquid; a heater which is provided to the first pipe and which heats the liquid; a pump which is provided to the first pipe and which pumps the liquid; an openable/closable first valve which, in the first pipe, is connected to the pump via the heater; a second pipe which is connected to the first pipe between the heater and the first valve and from which the liquid flows to the storage tank; and a third pipe from which the liquid flows to the storage tank, and which is used for collecting the liquid. In a state in which the heater has heated the liquid, during a first period the first valve is closed, during a second period after the end of the first period the first valve is opened and the pressure loss value of the second pipe increases, and during a third period after the end of the second period the first valve is opened and the pressure loss value of the second pipe decreases.
In the present invention, a carrier is conveyed along a first conveyance path. A plurality of substrates in the carrier are processed. A first standby unit is provided adjacent to a start point of the first conveyance path The first standby unit passes a carrier in which a plurality of unprocessed substrates are housed to the start point of the first conveyance path. A second standby unit is provided adjacent to an end point of the first conveyance path. The second standby unit receives the carrier in which the plurality of substrates, which have been processed, are housed. The plurality of substrates are removed from the carrier. After use, the carrier is picked up from a standby conveyance path connecting the second standby unit and the first standby unit, and then cleaned. The cleaned carrier is returned to the standby conveyance path.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
A substrate processing apparatus in which a carrier that houses a plurality of substrates is conveyed by a plurality of conveyance devices from a start point to an end point on a predetermined conveyance path. In a processing unit provided in a portion of the conveyance path, predetermined processing is performed by a liquid processing unit on the plurality of substrates housed in the carrier. The conveyance path is provided with an attitude modification unit that modifies the attitude of the carrier between a vertical attitude and a horizontal attitude. The attitude modification unit modifies the attitude of the carrier so that the carrier is maintained in the vertical attitude in the processing unit and the carrier is maintained in a horizontal attitude at sections other than the processing unit.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
75.
SUBSTRATE DRYING METHOD AND SUBSTRATE PROCESSING METHOD
The present invention relates to a substrate drying method and a substrate processing method. The substrate drying method is for drying a substrate W on which a pattern P is formed. The substrate drying method comprises an applying step, a curing step, and a thermally decomposing step. In the applying step, a drying assisting fluid F is applied to the substrate W. The drying assisting fluid F includes a UV-curable material. In the curing step, the drying assisting fluid F on the substrate W is irradiated with ultraviolet light. In the curing step, a solidified film H is formed on the substrate W. In the thermally decomposing step, the solidified film H is heated to cause thermal decomposition of the solidified film H. In the thermally decomposing step, the substrate W is dried.
In a substrate treatment device (100), a control unit (102): calculates, on the basis of a measurement result of a first flowmeter (112b), a first supply amount of a first component liquid supplied from a first component liquid supply unit (112) to a storage tank (116) via a first pipe (112a); calculates, on the basis of a measurement result of a second flowmeter (114b), a second supply amount of a second component liquid supplied from a second component liquid supply unit (114) to the storage tank (116) via a second pipe (114a); and controls the first component liquid supply unit (112) and the second component liquid supply unit (114) on the basis of the first supply amount and the second supply amount during a component liquid supply period that is at least one period among a period during which the first component liquid supply unit (112) supplies a first component via the first pipe (112a) and a period during which the second component liquid supply unit (114) supplies a second component via the second pipe (114a)
This substrate treatment device (100) comprises a substrate holding part (13) and a coating member (151). The substrate holding part (13) causes a substrate (W) to rotate while holding the substrate (W). The coating member (151), by coming into contact with an end surface part (51) located on the outer side in a radial direction (RD) of the substrate (W) being rotated, coats the end surface part (51) of the substrate (W) with a repellent which contains a liquid-repelling substance capable of repelling a treatment liquid for treating the substrate (W).
A substrate processing apparatus (100) is provided with a substrate holding unit (13) and a removal member (151). The substrate holding unit (13) holds and rotates a substrate on which a liquid-repellent substance capable of repelling a processing liquid is attached to at least a body surface peripheral portion (501) and an end face portion (51) of the substrate. The removal member (151) contacts at least the body surface peripheral portion (501) of the substrate W while being spaced apart from a side surface portion (515) of the end face portion (51), in a radial direction RD, of the substrate W during rotation of the substrate W, so as to cause a remover capable of removing the liquid-repellent substance to contact the liquid-repellent substance attached to the body surface peripheral portion (501). The body surface peripheral portion (501) of the substrate W refers to a peripheral region of a surface (A1) of the substrate body (50). The end face portion (51) of the substrate W refers to an end face region on the outside of the substrate body (50) in the radial direction RD.
Provided is a technology that is able to reduce the falling of foreign matter and the adhesion thereof on a lens even when the foreign matter is generated by a drive unit that moves a camera. This lens inspection device has a lens holding unit (51), a first camera (611), a first drive unit (613), and a first arm (615). The lens holding unit (51) holds a lens (9). The first camera (611) images the lens (9) held by the lens holding unit (51). The first drive unit (613) is located below the lens holding unit (51) and moves the first camera (611). The first arm (615) couples the first camera (611) and the first drive unit (613).
In order to provide a light source device capable of quickly changing the wavelength of light emitted therefrom, a light source device according to the present invention comprises a light amplifier, a spectroscopic element, a spatial phase modulation element, and a control unit. The light amplifier amplifies light and emits the light. The spectroscopic element disperses light from the light amplifier in accordance with the wavelength of the light. The spatial phase modulation element: has a base part and a plurality of grate elements for reflecting light spectrally diffracted by the spectroscopic element; causes at least some of the grate elements to be displaced relative to the base part and subjects the light spectrally diffracted by the spectroscopic element to phase modulation; and emits diffraction light along an incident light path which is from the spectroscopic element, for a portion of wavelengths in a wavelength range of the light spectrally diffracted by the spectroscopic element. The control unit controls the displacement of the plurality of grate elements with respect to the base part. The diffraction light emitted from the spatial phase modulation element causes light having a certain wavelength to be generated by the spectroscopic element. Said light having a portion of the wavelengths is amplified by the light amplifier and then is emitted toward the spectroscopic element. The light which has a portion of the wavelengths and which has undergone amplification for a plurality of times by the light amplifier, is emitted.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
In order to increase a response speed when changing the amount of light to be output, this variable optical attenuator is provided with a spatial phase modulation element, a first light transmission unit, a second light transmission unit, and a control unit. The spatial phase modulation element has a plurality of lattice elements each having a base and a light reflection surface, and generates diffracted light by subjecting light emitted onto the light reflection surface of each of the lattice elements to phase modulation according to the displacement and pitch of a displacement pattern with respect to the bases of the lattice elements. The first light transmission unit transmits first light, and emits the first light toward the light reflection surfaces of the lattice elements. The second light transmission unit receives second light that is diffracted light different from zero order diffracted light generated by the phase modulation of the first light by the spatial phase modulation element, and transmits the second light. The control unit controls the displacement of the lattice elements with respect to the bases, to thereby increase/decrease the amount of the second light which enters the second light transmission unit from the spatial phase modulation element.
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G02B 6/35 - Optical coupling means having switching means
82.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Provided are a substrate processing method and a substrate processing apparatus, that make possible the selective formation of a self-assembled monolayer having an improved functionality as a protective film; this is achieved by bringing about a uniform and improved film density and by suppressing or reducing the production of film defects. The present invention is a substrate processing method for processing a substrate that has, on a surface, a metal film formation region in which a metal film 1 is formed, and a non-metal film formation region in which the metal film 1 is not formed. The present invention comprises: an artificial oxide film formation step for forming an artificial oxide film 4 by oxidizing under atmospheric pressure a surface, of the metal film 1, that is not natively oxidized; and a self-assembled monolayer formation step for forming a self-assembled monolayer 6 on the artificial oxide film 4 by at least contacting the substrate surface with a processing solution that contains material for forming the self-assembled monolayer 6.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
83.
CALIBRATION ASSISTANCE METHOD AND CALIBRATION ASSISTANCE SYSTEM
Provided are a calibration assistance method and a calibration assistance system that improve the efficiency of calibration work and reduce mistakes in calibration work when there are a plurality of mutually related printing jobs. After registering a plurality of printing jobs consisting of a master job and general jobs (step S11), a computer compares image data corresponding to each general job against image data corresponding to the master job, to execute an automatic grouping process for assigning a plurality of mutually related printing jobs to a related-jobs group. When a common comment is input with respect to a common image region of a calibration image corresponding to one printing job included in the related-jobs group (step S14), the computer reflects the common comment in a calibration image corresponding to the other printing jobs constituting the related-jobs group (step S15).
This light radiation unit (30) has a housing (31), a light source (32), a light-focusing lens (33), and a light-transmissive member (34). An opening (312) is formed in a bottom surface (311) of the housing (31). The light source (32) and the light-focusing lens (33) are disposed within the housing (31). The light-transmissive member (34) is disposed at the opening (312) of the housing (31). The light-focusing lens (33) focuses the light emitted from the light source (32). The light-transmissive member (34) transmits the light focused by the light-focusing lens (33). The light-transmissive member (34) has a flat bottom surface. Thereby, it is possible to prevent air flow disturbance due to the light-focusing lens (33) from arising between the light radiation unit (30) and a printing medium (9).
The purpose of the present disclosure is to provide technology of efficiently replacing residual treatment liquid. In this invention, before filling with fresh treatment liquid, the temperature of residual treatment liquid in a pipe is raised. An increase in the liquid temperature decreases the viscosity thereof, facilitating discharge of the liquid from a pipe. After the residual treatment liquid is discharged, a treatment liquid newly stored in a storage tank is circulated in an external passage.
In this substrate treatment device, in a state in which a first valve (521) is opened and a second valve (531) is closed, a treatment liquid is supplied from a treatment liquid supply source (71) to a nozzle (51). In a state in which the first valve (521) is closed and the second valve (531) is opened, the treatment liquid in a first pipe (52) is discharged to a second pipe (53), and suck back of the treatment liquid in the nozzle (51) is performed. A cumulative discharge flow rate, which is a cumulative flow rate of the treatment liquid discharged from the first pipe (52) to the second pipe (53), is calculated on the basis of a measurement result from a flow rate sensor (56). A valve control unit closes the second valve (531) when the cumulative discharge flow rate has reached a predetermined suck back threshold. Due to the above configuration, a liquid level of the treatment liquid after suck back can be accurately positioned at a desired position.
A substrate processing apparatus comprising: a substrate loading/unloading unit; and a conveyance unit and a processing unit that are provided so as to extend in parallel from the substrate loading/unloading unit unit in a first direction. The conveyance unit conveys a carrier, which houses unprocessed substrates, from the substrate loading/unloading unit in the first direction. The processing unit includes a plurality of processing tanks. In the processing unit, the carrier in which the plurality of substrates are housed is conveyed in a second direction opposite to the first direction. The conveyed carrier is immersed in at least one of a plurality of processing liquids stored in the plurality of processing tanks. A maintenance space is formed so as to be adjacent to the processing unit in a plan view. The conveyance unit partially overlaps at least a part of the processing unit and the maintenance space in plan view.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
This substrate processing apparatus comprises a processing block, two openers, and two substrate delivery robots. The processing block has a substrate inlet and a substrate outlet, and an unprocessed substrate is received in the substrate inlet, and a predetermined process is carried out on the substrate. A processed substrate is guided to the substrate outlet. One of the openers opens a lid of one hoop in which an unprocessed substrate is accommodated at a position corresponding to the substrate inlet. One of the substrate delivery robots receives the substrate from the one hoop, and passes the substrate to the substrate inlet of the processing block. The other openers opens a lid of the other hoop, which is empty, at a position corresponding to the substrate outlet. The other substrate delivery robot receives the substrate from the substrate outlet of the processing block, and inserts the substrate in the other hoop.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
This substrate-processing method is for processing a substrate W having a pattern P formed thereon. The pattern P includes a plurality of protrusions A and a plurality of recesses B. The substrate-processing method comprises a first coating step, a first curing step, and a first thermal decomposition step. In the first coating step, a first drying support solution F1 is coated on the substrate W. The first drying support solution F1 includes a thermosetting material and a solvent. In the first curing step, the first drying support solution F1 on the substrate W is heated. In the first curing step, a first solidified film H1 is formed on the substrate W. In the first thermal decomposition step, the first solidified film H1 is heated, whereby the first solidified film H1 is thermally decomposed. In the first thermal decomposition step, the substrate W is dried.
The present invention relates to a substrate processing method and a substrate processing apparatus. A substrate processing method according to the present invention comprises: a substrate rotation step in which a substrate W that is formed of silicon and is kept in a horizontal posture is rotated; a mixed chemical agent ejection step in which a mixed chemical agent of hydrofluoric acid and ozone water is ejected onto the back surface of the rotated substrate W from a chemical agent nozzle 51; a polishing tool pressing step in which a polishing tool 31 that has a resin body, in which abrasive grains are dispersed, is pressed against the back surface of the rotated substrate W, while ejecting a rinsing liquid onto the back surface of the rotated substrate W from a fixed nozzle 3 after the mixed chemical agent ejection step; and a polishing tool moving step in which the polishing tool 31 is moved between the center of the substrate W and the edge of the substrate W, while performing the polishing tool pressing step.
Provided is technology that suppresses effects of droplets and enables monitoring of an object being monitored with higher precision. A substrate processing device according to the present invention includes a chamber (10), a substrate holding unit (20), a nozzle (30), a camera (70), and a control unit (9). The substrate holding unit (20) holds a substrate (W) in the chamber (10). The nozzle (30) discharges treatment liquid toward the substrate (W) held by the substrate holding unit (20). The camera (70) performs image-capturing of an image-capturing region including an object being monitored in the chamber (10), and generates image-captured image data. The control unit (9) monitors the object being monitored by using a region excluding at least part of a droplet region indicating droplets in the image-captured image data, when droplets are contained in the image-captured image data.
The present invention relates to a substrate treatment method and a treatment liquid evaluation method. The substrate treatment method is for treating a substrate W on which a pattern P has been formed. This substrate treatment method comprises a treatment liquid supply step, a solidified film formation step, and a sublimation step. In the treatment liquid supply step, a treatment liquid L is supplied to the substrate W. The treatment liquid L contains a sublimable substance and a solvent. In the solidified film formation step, the solvent evaporates from the treatment liquid L on the substrate W. In the solidified film formation step, a solidified film G is formed on the substrate W. The solidified film G contains a sublimable substance. A coefficient K is defined by surface free energy γLG, γGW, and γLW. The coefficient K is no greater than a threshold value TH.
The present invention relates to a substrate processing method and a substrate processing apparatus. This substrate processing method comprises: a rinse solution and brush cleaning step of moving a brush 31 acting on an upper surface of a substrate W from the center of the substrate W toward an edge portion of the substrate W, while spraying a rinse solution from a fixed nozzle 3 onto the upper surface of the substrate W, the substrate W being rotated by a holding rotating unit 2; a rinse solution spray stopping step of stopping the spray of rinse solution from the fixed nozzle 3 when the brush 31 moving toward the edge portion of the substrate W has been moved to a switching position defined in advance between the center of the substrate W and the edge portion of the substrate W; and a chemical solution and brush cleaning step of, after the rinse solution spray stopping step, moving a brush 51 acting on the upper surface of the substrate W from the switching position toward the edge portion of the substrate W, while spraying a chemical solution from a chemical solution nozzle 51 onto the upper surface of the substrate W, the substrate W being rotated.
In this image standardization method, firstly, a region corresponding to the whole or a portion of a biological sample in an image is extracted as an observation target region. Next, with respect to a plurality of observation target regions, an aggregated value for brightness values is calculated. Subsequently, brightness values in the plurality of observation target regions are controlled in such a manner that the difference in the aggregated values becomes small. In this manner, the light-dark variations in the plurality of observation target regions become small. Consequently, with respect to images of biological samples each composed of a plurality of cells, it becomes possible to reduce the difference in brightness values in observation target regions. As a result, a plurality of biological samples can be observed and evaluated in an equitable manner.
Provided are techniques that make it possible to monitor the state of an object being monitored with high accuracy. This substrate processing apparatus comprises a chamber (10), a substrate holding unit (20), a camera (70), and a control unit (9). The substrate holding unit (20) holds a substrate (W) in the chamber (10). The camera (70) captures an image of an imaging region that includes an item being monitored in the chamber (10), and generates captured image data. The control unit (9) identifies an environment state in the imaging region, and: if the environment state is a first environment state, monitors the state of the item being monitored on the basis of the captured image data according to a first determination procedure corresponding to the first environment state; and, if the environment state is a second environment state different from the first environment state, monitors the state of the item being monitored on the basis of the captured image data according to a second determination procedure that corresponds to the second environment state and is different from the first determination procedure.
A substrate processing device (100) comprising: a chamber (112); a substrate holding part (120) for holding and rotating a substrate (W) in the chamber (112); a treatment liquid supplying part (130) for supplying a treatment liquid to the top surface (Wt) of the substrate (W); a near infrared light source (140) for irradiating the inside of the chamber (112) with near infrared rays; a near infrared imaging unit (150) that generates a captured image of the treatment liquid in the chamber (112) irradiated with the near infrared rays from the near infrared light source (140); and a control unit (102) that identifies an outer edge of the treatment liquid in the chamber (112) on the basis of the captured image.
This substrate processing device comprises: exhaust paths to which a predetermined force is applied; and substrate processing units configured such that the exhaust paths can be shared. A group correlation is predetermined as correlations between a plurality of processing information items that correspond to the respective substrate processing units and that indicate operations or states concerning the supply and exhaust of air. The management device for managing the substrate processing device acquires the plurality of processing information items corresponding to the substrate processing units, and detects the states before the plurality of substrate processing units become abnormal, on the basis of comparison information in which comparisons are made between the group correlation and correlations between, among the plurality of processing information items, a plurality of processing information items that concern the exhaust of air.
The present invention calculates a plurality of types of statistics (φ1-φ5) for an input value group (Vs) of a specified number of sequential values included in time series data (V(t)). The plurality of types of statistics (φ1-φ5) are input into a learning model (M) created via machine learning. An estimated value (Ve) is thereby output from the learning model (M). The plurality of types of statistics at least includes a first statistic (φ1) representing the kurtosis of the input value group (Vs) and a second statistic (φ2) representing the skewness of the input value group (Vs). It is thereby possible to increase the accuracy of the estimated value (Ve) output from the learning model (M) more than if input values (V) themselves from the time series data (V(t)) were used as explanatory variables.
This control assistance device is for determining parameter values that are values of control parameters for controlling constituent elements in an air supply-exhaust system of a substrate processing device. The control assistance device comprises: a correspondence relationship acquisition unit for acquiring, from processing information indicating the state or operation concerning a process on a substrate by the substrate processing device, correspondence relationships between a plurality of parameter values and a plurality of model identification information items for respectively identifying a plurality of determination models for determining the normality degrees of operations of constituent elements; an information acquisition unit for acquiring a model identification information item corresponding to a determination model which is among the plurality of determination models and from which an appropriate determination result can be obtained from processing information during operation of a corresponding one of the constituent elements; and a decision unit for deciding a parameter value for controlling the constituent element on the basis of the model identification information item acquired by the information acquisition unit and a corresponding one of the correspondence relationships acquired by the correspondence relationship acquisition unit.
In the present invention, when processing is performed on a substrate in a housing in accordance with a recipe, a control unit causes a camera to acquire an adjusted captured image. An anomaly detection unit detects anomaly in a component of interest on the basis of the adjusted captured image. In the adjusted captured image, the image capture conditions are adjusted for each component of interest in accordance with the steps of the recipe. Thus, the adjusted captured image can be an image suitable for anomaly detection for each component of interest. Accordingly, anomaly detection can be performed accurately regardless of the steps of the recipe.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
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