A silicon semiconductor wafer is transported into a chamber, and preheating of the semiconductor wafer is started in a nitrogen atmosphere by irradiation with light from halogen lamps. When the temperature of the semiconductor wafer reaches a predetermined switching temperature in the course of the preheating, oxygen gas is supplied into the chamber to change the atmosphere within the chamber from the nitrogen atmosphere to an oxygen atmosphere. Thereafter, a front surface of the semiconductor wafer is heated for an extremely short time period by flash irradiation. Oxidation is suppressed when the temperature of the semiconductor wafer is relatively low below the switching temperature, and is caused after the temperature of the semiconductor wafer becomes relatively high. As a result, a dense, thin oxide film having good properties with fewer defects at an interface with a silicon base layer is formed on the front surface of the semiconductor wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
The substrate processing apparatus includes: a nozzle having a spout and adapted to spout SPM from the spout toward a substrate; a mixing portion communicating with the spout; a sulfuric acid-containing liquid supply device which recovers liquid supplied to and expelled from the substrate held by a substrate holding unit, prepares a sulfuric acid-containing liquid from the recovered liquid, and supplies the prepared sulfuric acid-containing liquid to the mixing portion; and a control device. The control device performs: a sulfuric acid-containing liquid preparing step of recovering SPM supplied to and expelled from the substrate and preparing the sulfuric acid-containing liquid; and an SPM spouting step of supplying the prepared sulfuric acid-containing liquid and hydrogen peroxide water to the mixing portion, mixing the sulfuric acid-containing liquid and hydrogen peroxide water together in the mixing portion to prepare SPM, and spouting the prepared SPM from the spout.
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
3.
IMAGE PROCESSING METHOD AND IMAGE PROCESSING DEVICE
This image processing method is for detecting a position of a detection target from a captured image acquired periodically, wherein the following steps are repeated multiple times: a) a step (S103) for analyzing a region to be analyzed in the captured image, and deriving a detection error and the position of the detection target; and b) steps (S104 to S107) for changing the region to be analyzed on the basis of the magnitude of the detection error. Due to this configuration, the region to be analyzed can be shrunk while keeping the detection error within a prescribed range. Consequently, it is possible to reduce the amount of computation without increasing the detection error in image processing for detecting a specific object from time-series image data.
A substrate treatment device (100) includes a nozzle (2), a first liquid receiver (41), a second liquid receiver (42), a drainage line (L2), a collection line (L3), a first reservoir (111), and a second reservoir (151). The nozzle (2) exclusively ejects a first liquid chemical and a second liquid chemical toward a substrate (W). The first liquid receiver (41) receives the first liquid chemical discharged from the substrate (W). The second liquid receiver (42) receives the second liquid chemical discharged from the substrate (W). The first liquid chemical from the first liquid receiver (41) flows into the drainage line (L2). The second liquid chemical from the second liquid receiver (42) flows into the collection line (L3). The first reservoir (111) reserves a third liquid chemical to be contained in the first liquid chemical. The second reservoir (151) reserves a fourth liquid chemical to be contained in the second liquid chemical. The first liquid chemical and the second liquid chemical are of the same kind. The collection line (L3) leads the second liquid chemical to the first reservoir (111).
A substrate treating method according to the present invention is a substrate treating method for treating a pattern-formed surface of a substrate W, the substrate treating method including: a supply process of supplying a substrate treating liquid containing a sublimable substance and a solvent to the pattern-formed surface; a solidification process of evaporating the solvent in a liquid film of the substrate treating liquid supplied to the pattern-formed surface in the supply process, depositing the sublimable substance, and forming a solidified film containing the sublimable substance; and a sublimation process of sublimating the solidified film and removing the solidified film, in which the sublimable substance contains at least one of 2,5-dimethyl-2,5-hexanediol and 3-trifluoromethylbenzoic acid.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A sensing terminal (500) comprises a detection sensor (511), a control unit (520), a battery (550), and an acceleration sensor (512). The detection sensor (511) detects the environment inside a substrate processing device (100). The control unit (520) can transition between an active state in which a prescribed operation is executed on the basis of detection results from the detection sensor (511) and a sleep state that has lower power consumption than the active state. The battery (550) supplies power to the control unit (520). The acceleration sensor (512) detects acceleration. The control unit (520) transitions between the active state and the sleep state on the basis of detection results from the acceleration sensor (512).
The present invention pertains to a light exposure device and a beam interval measurement method therefor, does not require an increase in stage movement strokes even when there are many light exposure heads, and can do so at a low cost. This light exposure device is equipped with: a stage for supporting a substrate in a horizontal orientation; a light exposure unit for performing epi-illumination in which each of three or more light exposure heads arranged in a first direction, which is a horizontal direction, emits a light exposure beam toward the stage; a scanning movement unit for moving the stage in the horizontal direction and scanning the light exposure beams across the substrate; and a measurement unit for measuring the interval between the light exposure beams which are emitted from each of the light exposure heads. The measurement unit has: a light receiver for receiving the light exposure beams; a light receiver support unit which is integrally provided to the stage, supports the light receiver and is capable of moving the light receiver in the first direction relative to the stage; and an interval calculation unit for calculating the interval between the light exposure beams which are emitted by each of the plurality of light exposure heads.
This learning device comprises: an experiment data acquisition unit that acquires, after processing of a film formed on a substrate is performed by driving a substrate processing device under processing conditions including a variation condition indicating the relative position of a nozzle to the substrate that varies as time elapses, a first processing amount indicating a film thickness difference before and after the processing of the film; a conversion unit that converts the variation condition and a condition among the processing conditions other than the variation condition into processing state data indicating the state of processing in each of a plurality of divided regions obtained by concentrically dividing the upper surface of the substrate; and a predictor generation unit that performs machine learning of learning data comprising the processing state data and the first processing amount corresponding to the processing conditions to generate a learning model for estimating a second processing amount.
This learning device includes: an experimental data acquisition unit that acquires a first processing amount indicating the difference in film thickness between before and after processing of a coating film, after the coating film has been processed by driving, under processing conditions including a fluctuating condition that fluctuates over time, a substrate processing device for processing the coating film by supplying a processing liquid to a substrate on which the coating film is formed; and a model generation unit that performs machine learning of training data including the fluctuating condition and the first processing amount corresponding to the processing conditions, and generates a learning model for inferring a second processing amount indicating the difference in film thickness between before and after processing of the coating film formed on the substrate prior to the coating film processing by the substrate processing device. The learning model includes a first convolutional neural network.
This learning device comprises: an experimental data acquisition unit that acquires a first processing amount indicating a film thickness difference before and after processing of a film formed on a substrate, after the film is processed by driving a substrate processing apparatus under processing conditions including a variation condition that indicates the relative position of the nozzle that varies with respect to the substrate over time; a first conversion unit that converts the variation conditions into compression data that indicates an operation amount regarding the nozzle corresponding to each of a plurality of movement intervals that are obtained by dividing the range of movement of the nozzle into a number smaller than the number of data items of the variation conditions in a scan period between the start and end of a nozzle operation; and a predictor generation unit that performs machine learning on learning data including the compression data and the first processing amount corresponding to the processing conditions, to generate a learning model for predicting a second processing amount.
In this classification method, first, a three-dimensional embryonic image (D2) is acquired by optical coherence tomography. Then, in the three-dimensional image (D2), a blastomere area occupied by each blastomere and a fragmentation area occupied by fragmentation are extracted. Then, the volume of each of the blastomere areas and the volume of the fragmentation area are calculated. In succession, a first index value (P1) indicating a variation of the volume of the blastomere in the embryo is calculated on the basis of the volume of each of the blastomere areas. In addition, a second index value (P2) indicating a ratio of the fragmentation in the embryo is calculated on the basis of the volume of the fragmentation area. Then, the embryo is classified on the basis of the first index value (P1) and the second index value (P2). Accordingly, the embryo in a cleavage stage can be quantitatively classified on the basis of the three-dimensional image (D2).
C12Q 1/04 - Determining presence or kind of microorganism; Use of selective media for testing antibiotics or bacteriocides; Compositions containing a chemical indicator therefor
12.
SUPPORT DEVICE, SUPPORT METHOD, SUBSTRATE PROCESSING SYSTEM, AND STORAGE MEDIUM
A support device supports adjustment of values of parameters of a substrate processing apparatus. The parameters include detection target parameters of which corresponding physical quantities are to be detected. An arithmetic processing section of the support device builds a predictive model through a first machine leaning model performing learning of quality data and detection data pieces relating to the physical quantities. The arithmetic processing section acquires detection data recommended values by executing Bayesian optimization based on the predictive model, an acquisition function, and a search range. The arithmetic processing section causes a second machine learning model to perform learning of the detection data pieces and values of the parameters. The arithmetic processing section outputs parameter recommended values by inputting the detection data recommended values to the second machine learning model having performed the learning.
G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
A technique allows sucking ink adhering to the lower surface of a head and preventing the ink from being sucked out from the inside of nozzles of the head. The printer includes a head that ejects ink and a maintenance unit that performs maintenance of the head. The head has a lower surface that includes a nozzle face provided with a plurality of nozzles and side faces located adjacent to the nozzle face. The maintenance unit includes a cleaning block that sucks the ink from the lower surface of the head. The cleaning block has an upper surface that includes a first region that faces the nozzle face and second regions that face the side faces. The suction force acting on the first region is smaller than the suction force acting on the second regions. This reduces the possibility that the ink is sucked out from the inside of the nozzles of the head.
The cleaning liquid supply mechanism ejects the cleaning liquid to an ejection target that is one of the cleaning roller and the cap. In particular, the cleaning liquid supply mechanism switches the ejection target between the cap and the cleaning roller and ejects the cleaning liquid to the ejection target. Specifically, if the cap is set as the ejection target, the cleaning liquid is ejected from the cleaning liquid supply mechanism directly to the cap as the ejection target. If the cleaning roller is set as the ejection target, the cleaning liquid is ejected from the cleaning liquid supply mechanism directly to the cleaning roller as the ejection target.
There is provided a technology that enables reduction of an amount of data to be processed in testing a printed image printed on a printing medium. A printing apparatus includes a printing unit, a camera, and an image-data output unit. The printing unit is capable of printing plural categories of test patterns on the printing medium. The camera captures an image of a test pattern printed on the printing medium, and outputs acquired image data to the image-data output unit. The image-data output unit reduces an amount of data of the image data output from the camera, in accordance with the category of the test pattern, and outputs acquired image data to a test apparatus.
A substrate cleaning device includes a chamber, a first processing part and a second processing part. The chamber forms a processing space including a first processing position and a second processing position. The first processing part performs a first process on a substrate disposed at the first processing position in the chamber. The second processing part performs a second process on the substrate disposed at the second processing position in the chamber. A main robot loads and unloads the substrate with respect to the substrate cleaning device by moving a hand holding the substrate. In addition, the main robot receives the substrate disposed at the first processing position by causing the hand to enter the processing space, transporting the substrate to the second processing position, and positioning the substrate.
A posture turning unit of a substrate treating apparatus includes two horizontal holders configured to place a plurality of substrates when the substrates are in a horizontal posture, two vertical holders provided below the horizontal holders and configured to hold the substrates in a vertical posture when the substrates are in the vertical posture, an opening and closing portion configured to move the two vertical holders between a holding position and a passing position, a supporting portion configured to support the two horizontal holders and the two vertical holders, a longitudinal rotator configured to rotate the supporting portion around a horizontal axis so as to direct the two vertical holders to the horizontal substrate transport mechanism, and a moving unit configured to move the supporting portion and the longitudinal rotator. When a posture of the substrates is turned to horizontal, the opening and closing portion moves the two vertical holders to into the passing position.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B08B 3/04 - Cleaning involving contact with liquid
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a substrate treating apparatus. In the substrate treating apparatus, a pusher is provided at a position accessible by a first transport mechanism, and a posture turning unit is provided at a position accessible by a center robot. A second transport mechanism receives substrates in a vertical posture held by the pusher, and delivers the substrates to the posture turning unit. The second transport mechanism includes two horizontal chucks configured to hold the substrates in the vertical posture while radially supporting two side portions of each of the substrates. The posture turning unit includes an upper and lower chucks for radially supporting an upper portion and a lower portion of each of the substrates in the vertical posture held by the two horizontal chucks to receive the substrates in the vertical posture from the two horizontal chucks, and upper and lower chuck rotation unit for rotating the upper and lower chucks around a horizontal axis.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An encoding step and an image selection step are performed by a computer 20. In the encoding step, a plurality of partial images D2 of an object are input to a learned VAE model M, and the plurality of partial images D2 are encoded to a plurality of latent variables in a multi-dimensional latent space. In the image selection step, one or more partial images D2 that are likely to include an alignment mark are selected on the basis of a distribution of the plurality of latent variables in the latent space. Thus, a partial image that is likely to include an alignment mark is automatically detected by the computer 20 with the use of the VAE model M. This can lighten a burden on an operator who searches for an alignment mark.
This gradient light interference microscope (1) includes an incidence path (30) in which light is made incident from a light source (20) to a sample arrangement position (40), and an emission path (50) in which transmitted light or reflected light emitted from the sample arrangement position (40) is made incident on an imaging element (60). The incidence path (30) has a first polarizing double-image prism (32) that splits incident light into a first polarized wave and a second polarized wave orthogonal to each other, and a condenser lens (33), in the stated order. The emission path (50) has an objective lens (51), a second polarizing double-image prism (52), a branching mechanism (56) that branches a composite beam emitted from the second polarizing double-image prism (52) into a plurality of paths, a phase delay mechanism (58) that causes mutually different phase delays in each second polarized wave of the plurality of branched beams, and a polarizing plate (72), in the stated order. By branching a light wave and applying a phase delay to each branch, an image can be captured for a plurality of phase delay amounts simultaneously, and image capture time can be shortened.
A substrate processing apparatus 1 wherein an orientation change region R3 is provided between a transfer block 5 and a batch processing region R1, a sheet substrate transport region R4 is adjacent to the transfer block 5 and the orientation change region R3, and a sheet processing region R5 is adjacent to the sheet substrate transport region R4. A center robot CR of the sheet substrate transport region R4 transports a substrate between a second orientation change mechanism 35 of the orientation change region R3, sheet processing chambers SW1 and SW2 of the sheet processing region R5, and a buffer unit 27. The center robot CR comprises a horizontally movable hand 37A that holds a horizontally oriented substrate, and a lifting table 41 that vertically moves the hand 37A, the position of the lifting table 41 being fixed in a horizontal direction XY.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
22.
ADDITIVE MANUFACTURING DEVICE AND ADDITIVE MANUFACTURING METHOD
In this additive manufacturing device (1), a control unit (5) controls a material holder (3) and an optical head (2) on the basis of design data pertaining to an additively manufactured object to thereby repeatedly carry out a process for supplying an additive manufacturing material (91) onto a stage (341), scanning a multi-spot beam in a prescribed scanning direction on a layer (92) on which drawing is to be performed, the layer (92) being the surface layer of the supplied additive manufacturing material (91), and then melting the additive manufacturing material (91) in a region irradiated with light and drawing a pattern. Non-drawing regions, with respect to which drawing is not indicated in the design data, include a narrow non-drawing region in which the scan-direction size is equal to or less than a correction threshold value. The control performed by the control unit suppresses irradiation with light on a narrow-part-adjacent region, which is a portion within a drawing region that is adjacent to a narrow non-drawing region, drawing being indicated in the design data with respect to the drawing region. This makes it possible to precisely form an additively manufactured object.
B33Y 30/00 - ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING - Details thereof or accessories therefor
B33Y 50/02 - Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
B29C 64/153 - Processes of additive manufacturing using only solid materials using layers of powder being selectively joined, e.g. by selective laser sintering or melting
Provided is a technology with which it is possible to suppress ink adhering to a nozzle surface of an ejection head from solidifying after a purge operation. A printing device (3) comprises an ejection head (H) that ejects ink from a nozzle (Hc), a cleaning block (7) that removes ink adhering to an ink ejection surface (Hb1) of the ejection head (H), a control unit (391) capable of executing a purge step (S101) and an ink removal step (S104), and an input device (396) for inputting commands to the control unit (391). The control unit (391) is capable of executing a first input determination process of determining whether input of a first command indicating execution of the purge step (S101) has been received via the input device (396). If the control unit (391) determines that the input of the first command has been received through the first input determination process, the control unit executes a maintenance process including the purge step (S101) and the ink removal step (S104).
Provided is a substrate processing device which has improved throughput by increasing the number of provided single-wafer type chambers while suppressing the size of the device. The present invention makes it possible to stack single-wafer type chambers in the vertical direction, and thus can provide a substrate processing device in which a larger number of single-wafer type chambers are mounted, even if the floor surface area is the same as that of a conventional device. Additionally, if a mechanism for carrying a substrate W into a single-wafer type chamber (drying chamber 37) and a mechanism for carrying the substrate W out from the drying chamber 37 are independently provided, it is possible for substrate conveyance around the drying chamber 37 to be smooth. The present invention makes it possible to provide a substrate processing device 1 that has a high throughput while being small in size.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
25.
SUBSTRATE PROCESSING SYSTEM, SCHEDULE CREATING METHOD, STORAGE MEDIUM, AND SCHEDULE CREATING PROGRAM
The present invention provides a substrate processing system that is capable of suppressing usage amount of utility. A substrate processing system (1000) includes a substrate processing device (200) and a control device (300). The control device (300) creates a schedule (SK) for actions of the substrate processing device (200). The control device (300) includes a storage unit (303) and a control unit (304). The storage unit (303) stores a plurality of trained models for creating a plurality of schedules (SK) in which usage amount of utility differs from each other. The control unit (304) is capable of creating the plurality of schedules (SK) on the basis of the plurality of trained models. Each of the plurality of trained models is built by executing reinforcement learning on the basis of input data at the time of learning. The input data at the time of learning includes count information, recipe information, and utility information (RS). The utility information (RS) indicates the usage amount of utility used in each action included in procedures of the actions of the substrate processing device (200).
This invention relates to a replacement end time determination method in a process of replacing a liquid to be replaced by a processing fluid in a supercritical state and a substrate. In the invention, a density profile is obtained at each of a dry state where the liquid to be replaced is not present in a chamber and a wet state where the liquid to be replaced is present in the chamber by supplying and discharging the processing fluid into and from the chamber in accordance with a predetermined supply/discharge recipe while maintaining the processing fluid in a supercritical state. When both densities become substantially equal to each other after the density at the wet state becomes larger than the density at the dry state, the replacement of the liquid to be replaced by the processing liquid is regarded to be finished.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
There is provided a technique that enables efficient and uniform laser marking. A laser marker includes a laser light source, an illumination optical system, a spatial light modulator, a projection optical system, and a scanning unit. The laser light source emits laser light. The illumination optical system shapes the laser light into a line-shaped parallel beam. The spatial light modulator includes a plurality of modulation components arranged along a long-axis direction, and modulates the parallel beam into a line-shaped modulated beam using the plurality of modulation components. The projection optical system guides the modulated beam to an object. The scanning unit scans the surface of the object with the modulated beam.
In an auxiliary heating part for performing a preheating treatment on a semiconductor wafer, VCSELs are arranged so as to surround LED lamps arranged in a circular region. The LED lamps irradiate the entire surface of the semiconductor wafer with light, and the VCSELs which emit light of relatively high directivity irradiate a peripheral portion of the semiconductor wafer where a temperature decrease is prone to occur with the light. A common power supply circuit is provided for the LED lamps and VCSELs that irradiate the peripheral portion of the semiconductor wafer with light. Increases in size and costs of power supply circuitry are suppressed because the single power supply circuit supplies power to the two different types of light sources to collectively control the two different types of light sources.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F27B 17/00 - Furnaces of a kind not covered by any of groups
This invention aims to propose a structure excellent in the maintenance operability of a cleaning member in a printing apparatus provided with the cleaning member for cleaning at least one of a wiper and a cap. In a printing apparatus according to the invention, a cleaning member for cleaning a wiper or a cap of a maintenance part is integrated with a printing head in a relative movement between the printing head and the maintenance part and arranged to at least partially overlap a movement path of the object to be cleaned with respect to the printing head and moves to outside the conveyance path integrally with the printing head when the printing head is moved from the inside position to the outside position.
A technique allows satisfactorily cleaning ejection heads with a cleaning liquid while protecting ink meniscus in nozzles. A printer includes an ejection head, a cleaning-liquid block, and a receptacle. The ejection head has an ink ejecting plane that includes nozzles as openings and ejects ink from the nozzles. The cleaning block has a head opposing plane that includes an ejection hole as an opening. The cleaning block ejects a cleaning liquid in an inclination direction inclined relative to the ink ejecting plane. The receptacle is located below the cleaning block and receives the cleaning liquid ejected from the ejection hole.
An object is to provide a technique allowing photographed data acquired by a camera to be converted properly to an image having a resolution necessary for inspection. An imaging device includes a camera, an image data output unit, and an external output signal generator. The camera outputs photographed data obtained by photographing an image on the basis of a camera output signal generated with a constant period. The image is printed on a printing medium transported in a transport direction X. The image data output unit outputs image data based on the photographed data to an inspection device. The external output signal generator generates an external output signal indicating timing of output of the image data by the image data output unit. The image data output unit calculates a weighted average of several pieces of photographed data stored in a buffer while giving respective weights responsive to a time gap between the camera output signal and the external output signal to the several pieces of photographed data.
A substrate processing apparatus includes a processing tank, a substrate holding section, a bubble supply section, and processing liquid supply sections. The substrate holding section immerses a substrate in a processing liquid stored in the processing tank. The bubble supply section supplies bubbles to the processing liquid from below the substrate. The processing tank includes a first side wall and a second side wall. The processing liquid supply sections include one or more first processing liquid supply sections and one or more second processing liquid supply sections. The one or more first processing liquid supply sections are disposed on a side of the first side wall and supply the processing liquid toward the bubbles. The one or more second processing liquid supply sections are disposed on a side of the second side wall and supply the processing liquid toward the bubbles.
A training device includes a data acquirer that acquires training data including a first image of a first type and a second image of a second type that is different from the first type, a first trainer that repeats an epoch for causing the first image and the second image to be learned under a same condition multiple times, and a second trainer that repeats an epoch for training a trained learning model generated by the first trainer with a rate of error back-propagation in regard to the first image and a rate of error back-propagation in regard to the second image being made different from each other.
Disclosed is a substrate treating apparatus provided with a posture turning unit. The posture turning unit includes a first vertical holder having a first rotating member and a first holder body provided so as to protrude from the first rotating member. The posture turning unit also includes a second vertical holder having a second rotating member and a second holder body provided so as to protrude from the second rotating member. A rotation driving unit rotates the two holder bodies around the two rotating members, respectively, whereby the two vertical holders are changed into a holding state or a releasing state. When a posture of substrates is turned to horizontal by a support base rotator, the rotation driving unit changes a state of the two vertical holders into the releasing state, whereby the substrates are released from the two holder bodies.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Disclosed is a substrate treating apparatus provided with a treating block. The treating block includes a wet transportation region adjoining a batch treatment region and a single-wafer transportation region. The wet transportation region contains a second posture turning mechanism provided on an extension line of a line of six batch process tanks and configured to turn a posture of substrates, on which immersion treatment is performed, from vertical to horizontal, a belt conveyor mechanism configured to receive the substrates in a horizontal posture one by one from the second posture turning mechanism and transport the substrates to the single-wafer transportation region, and a liquid supplying unit configured to supply a liquid to wet the substrates, transported by the belt conveyor mechanism, with the liquid.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
36.
ADJUSTING METHOD FOR PRINTING APPARATUS, AND A PRINTING APPARATUS
To provide an adjusting method for a printing apparatus, and the printing apparatus, capable of appropriately adjusting drive voltages of heads even when printing conditions are changed, this invention can appropriately acquire adjusted voltages of the heads even when printing conditions are changed. That is, according to this invention, a construction is configured to change an adjustable range of head drive voltages with a printing mode. This invention acquires the adjustable range corresponding to the printing mode set by referring to a table Ti. Consequently, the adjusted voltages of the heads can be determined within the adjustable range suited to each printing mode.
B41J 2/045 - Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
B41J 29/393 - Devices for controlling or analysing the entire machine
Provided is a substrate processing apparatus the throughput of which is improved by reviewing the configuration of an apparatus having a batch-type module and a sheet-type module. In a sheet processing region R2 related to sheet processing of a processing block 9 of the present invention, a buffer section 31 is provided in which both a first transfer mechanism HTR and a center robot CR can perform delivery of a substrate. Thus, the first transfer mechanism HTR can deliver, through the buffer unit 31, both a processed substrate W and an un-processed substrate at once. Thus, the potential of the first transfer mechanism HTR can be exploited, making it possible to provide a substrate processing apparatus 1 having high throughput.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
This 3D molding device (1) comprises a laser light source (21), a diffractive optical modulator (23) having a plurality of modulating elements, a lighting optical system (22), a first projection optical system (241) forming an intermediate image of the optical modulator (23), a second projection optical system (242) for forming a projection image of the intermediate image on a projection surface (95) of a modeling material (91) constituting a processing region, and a layer forming mechanism (12). The second projection optical system (242) scans the projection image on the projection surface (95). The layer forming mechanism (12) forms a new material layer (92) on the projection surface (95) onto which the projection image was scanned to form a new projection surface (95). The projection magnification of the first projection optical system (241) is smaller than the projection magnification of the second projection optical system (242).
B33Y 30/00 - ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING - Details thereof or accessories therefor
B29C 64/153 - Processes of additive manufacturing using only solid materials using layers of powder being selectively joined, e.g. by selective laser sintering or melting
Provided are a substrate processing method and a substrate processing apparatus that make it possible to selectively remove, in a satisfactory manner, a self-assembled monolayer that is provided to the surface of a substrate. The present invention is a substrate processing method for processing a substrate W that has a self-assembled monolayer 14 provided to a surface of the substrate, the method including: an ultraviolet light irradiation step S104 for irradiating the self-assembled monolayer 14 with ultraviolet light in an oxygen-atom-containing atmosphere, thereby reducing the water repellency of the surface of the self-assembled monolayer 14; and a removal step S105 for bringing an aqueous self-assembled monolayer removal solution into contact with the self-assembled monolayer 14 after the ultraviolet light irradiation step, thereby selectively removing the self-assembled monolayer 14.
A substrate processing device (100) comprises: a substrate processing unit (10); piping (32); a filter unit (140); and a pump (114). The substrate processing unit (10) processes a substrate (W). The piping (32) flows a processing liquid to the substrate processing unit (10). The filter unit (140) is disposed at the piping (32). The filter unit (140) includes a filter (141) that traps particles in the processing liquid. The pump (114) applies pressure to a liquid containing the processing liquid, thus causing the liquid to pass through the filter (141). When the substrate is being processed, the pump (114) applies pressure to the processing liquid so that the pressure of the processing liquid with respect to the filter (141) achieves a first pressure. When the substrate is not being processed, the pump (114) applies pressure to the liquid so that the pressure of the liquid with respect to the filter (141) achieves a second pressure, which is higher than the first pressure.
This substrate processing apparatus (100) comprises: a substrate holding part (20) for holding and rotating a substrate (W), and a mixture supply part (50) for supplying, to the substrate (W) rotated by the substrate holding part (20), a sulfuric acid hydrogen peroxide mixture in which sulfuric acid and hydrogen peroxide are mixed. The mixture supply part (50) supplies the sulfuric acid hydrogen peroxide mixture to the substrate at a first flow rate during a first period, and supplies the sulfuric acid hydrogen peroxide mixture to the substrate at a second flow rate that is less than the first flow rate during a second period after the first period. The proportion of the sulfuric acid of the sulfuric acid hydrogen peroxide mixture in the second period is smaller than the proportion of the sulfuric acid of the sulfuric acid hydrogen peroxide mixture in the first period.
According to this invention, in an upper surface protective heating mechanism for heating a substrate while covering the upper surface of the substrate held by a substrate holding unit, a base block, a first underblock, and a second underblock are combined, and a gap region and an annular outlet are formed. A gas flowing through the gap region is heated by a peripheral edge heating unit, and is then supplied from the annular outlet to the vicinity of the peripheral edge of the upper surface of the substrate. The peripheral edge heating unit can increase, within a short time, not only the temperature of the gas but also the temperature of the peripheral edge of the substrate for heating the peripheral edge of the upper surface of the substrate to a temperature suited for substrate treatment.
A substrate processing apparatus 1 comprises a transfer block 5, a processing block 7, and a buffer unit 33. The transfer block 5 comprises a bulk transport mechanism HTR for storing a substrate W into a carrier C, and a first attitude transform mechanism 15 for transforming the substrate W into a vertical attitude. The processing block 7 comprises a batch processing region R1, a single processing region R3, a single substrate transport region R2, and a batch substrate transport region R4. The batch processing region R1 is provided with batch processing baths BT1 to BT6, and a second attitude transform mechanism 31 for transforming the substrate W into a horizontal attitude. The single processing region R3 is provided with a single processing chamber SW1, for example. The single substrate transport region R2 is provided with a center robot CR. The batch substrate transport region R4 is provided with a first transport mechanism WTR1. The bulk transport mechanism HTR transports the substrate W to the first attitude transform mechanism 15, and transports the substrate W from the buffer unit 33.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
This film formation device (100) comprises a chamber (1), a mounting stand (21), and a fluid bed (3). The fluid bed (3) is provided to a position, within the chamber (1), that faces a first main surface of a substrate (W) that is mounted on the mounting stand (21). The fluid bed (3) has a plasma chamber (4b), a plasma source (5), a plurality of first outflow ports (4c), a gas flow path (6b), and a plurality of second outflow ports (6c). The plasma source (5) turns a first raw-material gas into plasma in the plasma chamber (4b). The first outflow ports (4c) are arranged in a two-dimensional array in an overlapping region that overlaps the first main surface of the substrate W as seen in plan view. An active species that is derived from the first raw-material gas flows from the first outflow ports (4c) toward the first main surface of the substrate W. The plurality of second outflow ports (6c) are arranged in a two-dimensional array at different positions than the plurality of first outflow ports (4c) in the overlapping region. A second raw-material gas flows from the plurality of second outflow ports (6c) toward the first main surface of the substrate W.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
The present water electrolyzer has a stack structure with a cell and a separator stacked alternately. The separator includes a metal plate and a flow path member. The metal plate has a distribution hole. The flow path member is located between a base layer of the cell and the metal plate in a stacking direction. The flow path member surrounds the distribution hole in a ring-like shape when viewed in the stacking direction. The flow path member includes a flow path through which a gas diffusion layer of the cell and the distribution hole communicate with each other. As a result, it becomes possible to cause gas or water to flow between the gas diffusion layer and the distribution hole through the flow path formed at the flow path member. This achieves reduction in the number of the metal plates to be used as the separator.
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
The present separator is used in a stack structure in which a cell and the separator are stacked alternately. The cell has a base layer including an electrolyte membrane. The separator includes a metal plate and a ring-like seal member. The seal member is arranged on a surface of the metal plate. The metal plate includes a regulator. The regulator is provided near the seal member and contacts the base layer. As a result, it becomes possible to reduce a likelihood that the seal member will be compressed excessively in a stacking direction in the stack structure.
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
The overlapping regions L are formed by overlapping the outer cylinder vent holes and the inner cylinder vent holes. If the suction port of the inner cylinder receives a suction force from the blower, air is sucked toward the suction port from the suction chamber facing the overlapping region L of the inner cylinder vent hole and the outer cylinder vent hole, out of the plurality of suction chambers, via the overlapping region L. The outer cylinder and the inner cylinder are so configured that the overlapping region L becomes narrower in the rotation direction Dr from the center toward the both ends in the axial direction Da.
First, a correction area, which is a part of area where a second ink (typically, white ink) is to be ejected among the area on base material, is determined. Next, density data is corrected so that the second ink is ejected onto the correction area. Thereafter, actual printing on the base material is started. Then, the second ink is ejected onto the correction area, and a first ink (typically, color ink) is ejected onto the second ink that has been ejected onto the base material in the correction area.
B41J 2/045 - Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
A substrate cleaning apparatus includes an upper holding device holding an outer peripheral end of a substrate, and a lower surface brush contacting a lower surface of the substrate to clean the lower surface. The lower surface brush moves from a state of being separated from the lower surface to contact a first partial region of the lower surface when cleaning of a lower surface central region of the substrate is started. Then, the lower surface brush moves into contact with the lower surface central region on the lower surface. The lower surface brush moves from a state of being in contact with the lower surface to be separated from a second partial region of the lower surface when cleaning of the lower surface central region is completed. At least one of the first partial region and the second partial region does not overlap the lower surface central region.
Provided is a substrate treating apparatus can be provided that transports substrates reliably and has suppressed manufacturing cost by revising a construction of an apparatus including a batch-type module and a single-wafer-type module.
Provided is a substrate treating apparatus can be provided that transports substrates reliably and has suppressed manufacturing cost by revising a construction of an apparatus including a batch-type module and a single-wafer-type module.
The present invention especially focuses on a process by a substrate treating apparatus for picking up one substrate from substrates aligned in a vertical posture, turning a posture of the substrate to horizontal, and transporting the substrate to a predetermined position in the vicinity of a single-wafer transport region. With the present invention, a process of picking up the substrate and a process of turning the posture of the substrate are performed independently, achieving simplification in construction of a substrate pick-up unit and reduction in positional error generated when the substrate pick-up unit operates.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
52.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
First and second concentration measurement parts (415, 425) are provided in first and second supply liquid lines (412, 422) in which first and second supply liquids flow, respectively. A dissolved concentration of gas in the second supply liquid is lower than that in the first supply liquid. In the first and second supply liquid lines, respective one ends of first and second branch lines (51, 52) are connected to respective positions on the upstream side of the concentration measurement parts. The other ends of the first and second branch lines are connected to a mixing part (57), and by mixing the first and second supply liquids, a processing liquid is generated. Respective flow rate adjustment parts (58) of the first and second branch lines are controlled on the basis of respective measured values of the first and second concentration measurement parts so that the dissolved concentration of the gas in the processing liquid can become a set value. It is thereby possible to prevent the supply liquid containing particles or the like caused by the concentration measurement part from being contained into the processing liquid to be supplied to a substrate and also to adjust the dissolved concentration of the gas in the processing liquid to the set value with high accuracy.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B01F 23/40 - Mixing liquids with liquids; Emulsifying
B01F 23/45 - Mixing liquids with liquids; Emulsifying using flow mixing
B01F 23/454 - Mixing liquids with liquids; Emulsifying using flow mixing by injecting a mixture of liquid and gas
B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam
Provided is a technology that makes it possible to relax, in a device that captures images of a workpiece using mirrors, restrictions on mirror arrangement while maintaining an image capture angle and an image capture magnification. An imaging device (13) captures images of a workpiece (9) from a plurality of directions. The imaging device (13) comprises: a single camera (20); a mirror (41) located on a first optical path (LP1) from the workpiece (9) to the camera (20); and mirrors (51) and (52) located on a second optical path (LP2) from the workpiece (9) to the camera (20), the second optical path (LP2) being different from the first optical path (LP1). On the second optical path (LP2), the mirror (52) is located between the workpiece (9) and the mirror (51). The optical path length of the first optical path (LP1) is equal to the optical path length of the second optical path (LP2).
The present invention relates to an optical device that shifts the path of light, and an exposure device and exposure method that use said optical device. The purpose of the present invention is to adjust the shift amount while minimizing any increase in astigmatic difference with a simple and compact configuration. This optical device shifts the path of input light in a shift direction that is orthogonal to the direction of incidence of the light. The optical device includes a shift optical element (111) that is a parallel plane plate in which input light is incident on one side of mutually parallel surfaces and output light is emitted from the other side, a correction optical element (113) placed in the optical path of the input light or the optical path of the output light to correct astigmatic difference appearing in the output light, and a drive unit (114) that causes the shift optical element (111) to rotate to change the shift amount and displaces the correction optical element (113) in conjunction with the shift optical element (111).
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The present invention relates to an exposure method and an exposure device, the purpose of which is to enable exposure in both acceleration and deceleration periods during relative movement between an exposure part and a substrate holding part, and to thereby improve the takt time of the exposure process. An exposure part that outputs a light beam and a substrate holding part that holds a substrate are moved relative to each other to thereby scan an incident position of an output light beam on the substrate. The relative movement speed between the exposure part and the substrate holding part is calculated on the basis of a signal generated in conjunction with the relative movement, and exposure is performed by causing the laser beam to enter the substrate while changing the light quantity of the light beam in multiple stages at a prescribed control period. The control period and the maximum light quantity of the light beam are modified in accordance with the calculated relative movement speed.
A substrate processing device (100) comprises a substrate processing unit (10), a pipe (32), a filter (141), an upstream-side pipe (151), a downstream-side pipe (161), and a removal liquid supply unit (165). The substrate processing unit (10) processes a substrate W. The pipe (32) circulates a processing fluid to the substrate processing unit (10). The filter (141) is disposed in the pipe (32). The upstream-side pipe (151) is connected to the pipe (32) on the upstream-side of the filter (141). The downstream-side pipe (161) is connected to the pipe (32) on the downstream-side of the filter (141). The removal liquid supply unit (165) supplies a bubble removal liquid to one of the upstream-side pipe (151) and the downstream-side pipe (161). The substrate processing device (100) allows the bubble removal liquid to pass from one of the upstream-side pipe (151) and the downstream-side pipe (161) to the other of the upstream-side pipe (151) and the downstream-side pipe (161) via the filter (141).
The head replacement method includes: a pipe connection step of performing, by a user, pipe connection of a new head; an ink circulation start step of starting circulation of ink in a circulation flow path; and a connection state determination step of determined, based on an ink liquid level position representing a height of an ink liquid level in at least one of a collection tank and a supply tank, whether a pipe connection, including a connection between an ink discharge pipe and a collection branch pipe and a connection between an ink inflow pipe and a supply branch pipe, is properly made.
A substrate cleaning apparatus includes an upper holding device holding an outer peripheral end of a substrate, and a lower surface brush contacting a lower surface of the substrate to clean the lower surface. The lower surface brush moves between a contact position where the lower surface brush contacts the lower surface of the substrate held by the upper holding device and a separation position where the lower surface brush is separated from the substrate held by the upper holding device by a certain distance. At the separation position, the lower surface brush rotates at a first rotation speed. At the contact position, the lower surface brush rotates at a second rotation speed higher than the first rotation speed at a time point when the lower surface brush contacts the lower surface and a time point when the lower surface brush is separated from the lower surface.
A46B 13/02 - Brushes with driven brush bodies power-driven
B08B 1/04 - Cleaning by methods involving the use of tools, brushes, or analogous members using rotary operative members
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 5/02 - Cleaning by the force of jets, e.g. blowing-out cavities
B08B 13/00 - Accessories or details of general applicability for machines or apparatus for cleaning
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A reflectance measurement part measures the reflectance of a back surface of a semiconductor wafer. An imaging parameter of a camera is adjusted based on the measured reflectance. The imaging parameter includes exposure time and sensitivity of the camera. The camera with the adjusted imaging parameter images the back surface of the semiconductor wafer to determine the presence or absence of a flaw from the obtained image data. The camera is able to perform appropriate imaging in accordance with the reflectance of the back surface of the semiconductor wafer. Thus, a flaw in the back surface of the semiconductor wafer is detected with reliability even if the reflectance of the back surface is varied due to the deposition of a thin film on the back surface.
A technique allows satisfactory removal of ink droplets adhering to the ejection surface of an ejection head while preventing the occurrence of performance degradation of the ejection surface. A printer performs printing by ejecting ink droplets to an upper surface of a long band-like base material (M). The printer includes an ejection head and a cleaner. The ejection head has an ejection surface in which a plurality of ink ejection outlets for ejecting ink droplets are arranged in a width direction (X). The cleaner cleans the ejection surface. The cleaner includes a gas ejector. The gas ejector ejects gas to the ejection surface from a position away from the ink ejection outlets in the Y direction.
A leak determination method includes: a heating step of heating a semiconductor wafer in a chamber; a transport step of transporting the semiconductor wafer from the chamber after the heating step; a temperature measurement step of measuring an ambient temperature in the chamber; and a leak determination step of performing leak determination processing of the chamber. After the semiconductor wafer is transported from the chamber, waiting is continued until the ambient temperature decreases to a predetermined waiting specified temperature, and the leak determination processing is started when the ambient temperature reaches the waiting specified temperature.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Techniques are provided for adequately cooling a continuous base material while efficiently drying a pre-processing liquid on the continuous base material before printing using second ink. The printer includes first and second printing units and a dryer located downstream of the first printing unit and including a heating roller. The second printing unit is located downstream of the dryer. The heating roller has a first outer peripheral surface around which the continuous base material is wound, and heats the continuous base material with the first outer peripheral surface being in contact with a second surface of the continuous base material on the side opposite to the first surface. The dryer includes a cooling roller located downstream of the heating roller and having a second outer peripheral surface around which the continuous base material is wound. The second outer peripheral surface has a lower temperature than the first outer peripheral surface.
The present invention is a position adjustment method for head units arrayed in a predetermined width direction attachably to and detachably from a base member. A position of a second head unit in the width direction and a rotation direction are respectively adjusted while the second head unit is engaging a tip part of a reference pin. More particularly, a width direction adjuster moves the second head unit in the width direction with a first head unit kept fixed to the base member. In this way, the gap between the first head unit and the second head unit is adjusted. Further, a rotation direction adjuster moves the second head unit in the orthogonal direction at a separation position distant from the reference pin. In this way, a rotation direction position of the second head unit with respect to the tip part of the reference pin is adjusted.
This light irradiation device, which combines laser light beams generated using a plurality of light sources into a single beam, suppresses the dissipation of light emitted from a plurality of laser light sources without increasing the light path length. In this light irradiation device and exposure device an irradiation optical system has: an incidence angle conversion unit that includes a first lens and a second lens arranged in a positional relationship forming a beam expander; a divided lens unit that has a plurality of lenses arranged in a direction along a plane and perpendicular to the optical axis of the incidence angle conversion unit, and that, by means of the plurality of lenses, divides the light emitted from the incidence angle conversion unit; a light path length difference generation unit that has a plurality of light-transmitting parts having mutually different light path lengths and arranged in a direction perpendicular to the optical axis, and that causes the light that has passed through the plurality of lenses to be incident respectively to the plurality of light-transmitting parts; and a condensing lens unit that causes the irradiation regions of the light emitted from the plurality of light-transmitting parts to overlap on a surface to be irradiated.
An organ preservation container includes a container body, joints, and tubes. The container body includes a bottom plate and a side wall. The side wall has through holes. Each joint has a through hole. The tubes are connected to the joints from the inner side of the container body. Thus, the tubes are arranged in advance in the container body in an organ transplant operation. This enables a small number of people to speedily conduct the work of placing an organ removed from the donor in the container body and connecting the tubes to blood vessels in the organ.
A substrate processing apparatus includes a cup, an exhaust duct, a mist collecting member and a lid portion. The cup surrounds a substrate being processed with use of a processing liquid. The exhaust duct has an opening in a portion not overlapping with the cup in a plan view and forms an exhaust flow path for exhausting a gas in the cup. The mist collecting member is provided at a position overlapping with the opening and collects mist of the processing liquid in the exhaust duct. The lid portion closes the opening of the exhaust duct.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
75.
TWO-FLUID DISCHARGE DEVICE, SUBSTRATE PROCESSING DEVICE, AND TWO-FLUID NOZZLE CONTROL METHOD
Provided is a two-fluid discharge device comprising a two-fluid nozzle, a gas supply unit, a liquid supply unit, and a control unit. In the present invention, the two-fluid nozzle can discharge a mixed liquid obtained by mixing a liquid and a gas. In the two-fluid nozzle, the gas is supplied from the gas supply unit. Moreover, in the two-fluid nozzle, the liquid is supplied from the liquid supply unit. When the control unit controls the gas supply unit and the liquid supply unit to stop the discharge of the mixed liquid from the two-fluid nozzle, the control unit stops the supply of the liquid and then stops the supply of the gas.
According to the present invention, a certain amount of IPA is supplied from a processing liquid nozzle to a substrate after a cleaning process. The liquid level of the IPA is gradually decreased by means of preliminary drying and when the liquid level of the IPA coincides with the upper end of a pillar of a pattern that is formed on the substrate, the surface of the substrate is irradiated with flash light from a flash lamp so as to instantaneously vaporize the remaining IPA. By irradiating the surface of the substrate with flash light with high intensity for an extremely short period of irradiation time, the drying time which is necessary for removing the processing liquid from the surface of the substrate from the time when the capillary force started to act on the pattern becomes shorter than the collapse time which is necessary for causing the pattern to collapse from the time when the capillary force started to act on the pattern. Consequently, pattern collapse can be reliably suppressed even if the pattern has a large aspect ratio.
A substrate processing apparatus includes a nozzle that supplies a processing liquid to a substrate, a mover that moves the nozzle between a supply position above a substrate and a waiting position outward of the substrate, a nozzle container that is located at the waiting position and contains the nozzle, a first exhaust flow path that guides a gas in a processing space in which a processing liquid is supplied to a substrate to an exhaust device, and a second exhaust flow path that guides a gas in the nozzle container to the first exhaust flow path.
B05B 13/04 - Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during operation
B05B 12/00 - Arrangements for controlling delivery; Arrangements for controlling the spray area
B05D 1/02 - Processes for applying liquids or other fluent materials performed by spraying
78.
IMAGE COMPARISON METHOD, IMAGE COMPARISON DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM RECORDING IMAGE COMPARISON PROGRAM
After a difference image between original image and calibration image is generated, a candidate image of an edge region is generated. Thereafter, an edge image is generated based on the original image, the calibration image, and the candidate image. At that time, the processing target pixel (pixel constituting the candidate image) is determined to be a pixel constituting the edge region when a difference between a pixel value of at least one of nine comparison target pixels in the original image and a pixel value of the processing target pixel in the calibration image is less than or equal to a first threshold value, and when a difference between a pixel value of at least one of nine comparison target pixels in the calibration image and a pixel value of the processing target pixel in the original image is less than or equal to the first threshold value.
A substrate processing apparatus includes a nozzle, a pipe, a protective pipe, a nozzle driver, and a leak sensor. The nozzle discharges a processing liquid to a substrate to be processed. The pipe is connected to the nozzle. The protective pipe surrounds an outer periphery of the pipe. The nozzle driver moves the nozzle. The leak sensor detects a leak liquid from the pipe.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
This substrate processing apparatus performs electrolytic etching on the peripheral edge of a substrate (9). A first etching head (611) radially faces the peripheral edge of the substrate (9) in a part of the circumference around a rotation axis. The first etching head (611) holds an electrolytic solution (610) therein. The first etching head (611) has an insertion opening (615) into which the peripheral edge of the substrate (9) is inserted. A first head moving mechanism moves the first etching head (611) forward and backward relative to the peripheral edge of the substrate (9). An anode is in electrical contact with a conductive film (93). A cathode (66) is in electrical contact with the electrolytic solution (610). A power supply applies a voltage between the anode and the cathode (66) in a state in which the peripheral edge of the substrate (9) is inserted into the first etching head (611) through an insertion port (615) to be in contact with the electrolytic solution (610). As a result, the etching width of the conductive film (93) can be adjusted with high precision.
In this invention, an outer flow adjustment member adjusts flow of a gas passing between an upper sealing member and a lower sealing member and causes the gas to flow downward along an outer surface of the lower sealing member. Thus, a so-called air curtain is formed so as to surround a treatment space. Moreover, when the formation of an atmosphere separation space is eliminated, an inner flow adjustment member for adjusting flow of a gas passing through the inside of the lower sealing member and causing the gas to flow in the treatment space raises and lowers integrally with the lower sealing member while the outer flow adjustment member is attached to the upper sealing member and remains at a fixed position. This generates a pressure difference between outlet sides of the outer flow adjustment member and the inner flow adjustment member and increases the flow rate of a gas flowing downward from the outer flow adjustment member along the outer surface of the lower sealing member. That is, the air curtain is strengthened.
This invention pertains to a substrate treatment technology for performing a prescribed substrate treatment on a substrate by supplying a treatment liquid to the substrate held by a rotating substrate holding unit, and collecting droplets of the treatment liquid flung out from the substrate during the substrate treatment. In this device, a cup-rinsing liquid is directly supplied to a rotary cup part from an inner portion of the rotary cup part while the rotary cup part rotates about the rotation axis. Accordingly, the treatment liquid is removed from the rotary cup part while the use amount of the cup-rinsing liquid is reduced, whereby the rotary cup part can be kept clean.
In an substrate processing apparatus according to the present invention, a chamber is configured so as to cover an internal space with a bottom wall, side walls extending from the periphery of the bottom wall, and a ceiling wall covering the upper end of the side walls. A plurality of base support members stand vertically upward from the bottom wall, and the base member is supported by upper end portions of these base support members. A so-called raised floor structure is formed. Then, the substrate processing part is installed on the upper surface of the base member. By adopting such a layout using the raised floor structure, even if leakage of the processing liquid occurs and the processing liquid is pooled on the bottom wall of the chamber, it is possible to reliably prevent the processing liquid from coming into contact with the substrate processing part.
Disclosed is a substrate treating apparatus including a substrate holder configured to hold a treatment substrate group, a second transport mechanism configured to pull out and transport a divided substrate group from the treatment substrate group held by the substrate holder, an underwater posture turning unit configured to turn a posture of the divided substrate group, transported by the second transport mechanism, from vertical to horizontal collectively, a center robot configured to take one substrate from the divided substrate group, whose posture is turned to horizontal, and to transport the one substrate to a single-wafer processing unit, a relative lifting and lowering unit configured to move the substrate holder and the second transport mechanism upward and downward relatively, and an alignment direction relative moving unit configured to move the substrate holder and the second transport mechanism relatively horizontally in an alignment direction where the treatment substrate group is aligned. The second transport mechanism includes one-paired chucks having holding grooves and passing grooves arranged one by one alternately.
Provided is a substrate processing apparatus of which throughput is improved through the review of the configuration of an apparatus having a batch-type module and a sheet-type module. In a sheet processing region R2 of a processing block 9 of the present invention, the region relating to sheet processing, a buffer section 31 in which both a first transfer mechanism HTR and a center robot CR can perform delivery of a substrate. Thus, the first transfer mechanism HTR can deliver, through the buffer unit 31, both a processed substrate W and an un-processed substrate at once. Thus, the potential of the first transfer mechanism HTR can be exploited, making it possible to provide a substrate processing device 1 having high throughput.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
86.
CONNECTION PIPING, METHOD FOR PREPARING PERFUSION DEVICE, AND PERFUSION METHOD
Provided is connection piping (1) for temporarily connecting to a perfusion device (100) that perfuses an organ, the connection piping (1) having: a first pipe (61) having, at one end thereof, a first connection part (611) for connecting to a first supply pipe (31); a second pipe (62) having, at one end thereof, a second connection part (621) for connecting to second supply pipe (41); and a third pipe (63) that, at one end thereof, is communicably connected either directly or indirectly to the other end of the first supply pipe (61) and the other end of the second supply pipe (62), and that has, at the other end thereof, a third connection part (631) for connecting to a recovery pipe (51). Attaching such connection piping 1 to a perfusion device (100) and performing a priming process makes it possible to reduce the risk of contamination with bacteria during the priming process in a perfusion device (100) that has two piping systems as inflow routes and one piping system as an outflow route.
In a substrate treatment device according to the present invention, in an internal space of a chamber, a substrate holding part is disposed at a treatment position offset from the center of the internal space toward a conveyance opening side. The conveyance distance and conveyance time of a substrate along a conveyance path are shortened by the offset amount, and power is saved. In addition, a nozzle movement part is configured to move a treatment liquid discharge nozzle in a first radial direction, which is inclined with respect to a first virtual horizontal line, among radial directions of the substrate. Accordingly, the arrangement relationship among the substrate holding part, a nozzle head, and the nozzle movement part in the chamber is optimized, and the substrate treatment can be executed preferably without using a chamber having a uselessly large inner space.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
88.
WIRING FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS
A wiring forming method includes a loading step (Si), an etching step (S3), and a reducing step (S6). In the loading step (S1), a substrate having a metal wiring portion formed thereon is loaded into a chamber. In the etching step (S3), an oxidizing gas is supplied to the substrate to etch one part of the metal wiring portion. In the reducing step (S6), a reducing gas is supplied to the substrate to reduce an oxide film of the metal wiring portion formed by the etching step (S3).
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In an substrate processing apparatus according to the present invention, a chamber has a a conveyance opening for conveying the substrate along a conveyance path between the outside of the chamber and the substrate holder and a maintenance opening provided on an opposite side of the conveyance opening with the substrate holder. A rotating mechanism has a motor for generating a rotational driving force to rotate the substrate holder and a power transmitter for transmitting the rotational driving force generated by the motor to the substrate holder. The motor and the power transmitter are so arranged on the opposite side of the conveyance opening with respect to the substrate holder, as to face the maintenance opening, to thereby make the rotating mechanism accessible through the maintenance opening from the outside.
B25J 9/04 - Programme-controlled manipulators characterised by movement of the arms, e.g. cartesian co-ordinate type by rotating at least one arm, excluding the head movement itself, e.g. cylindrical co-ordinate type or polar co-ordinate type
In a substrate processing apparatus according to the present invention, a heating mechanism for heating a substrate includes a gas discharge nozzle arranged in an internal space, a heater attached to an outer wall of a chamber, and a pipe feeding to the discharge nozzle. An observing mechanism includes a light source part and an image pickup part which are arranged at a separation position away from an attachment portion in the outer wall of the chamber. Thus, the light source part and the image pickup part become less susceptible to an effect of heat generated by the heater. In other words, it is possible to prevent the reduction in the observation accuracy due to an effect of temperature change.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
91.
VERTICAL BEAM STEERING WITH A MEMS PHASED-ARRAY FOR LIDAR APPLICATIONS
A light detection and ranging (LIDAR) system incorporates a scanning system with random access pointing. The scanning system has a light source that generates a coherent light, a micro-electro-mechanical system (MEMS) phased-array that steers the coherent light in a vertical direction, and a resonant scanner that scans the coherent light in a horizontal direction. The coherent light is projected onto a far field scene. The MEMS phased-array steers the coherent light to point the projected light on selected spots on the far field scene in random access fashion.
This substrate treatment method comprises: a step (S1) for immersing a substrate (W) in an alkaline treatment liquid (L); and a step (S2) for etching, by means of the treatment liquid (L), a polysilicon layer (Wc) filling a columnar recess (Wb) which extends roughly perpendicularly to the main surface (Wa) of the substrate (W). In the step (S2), bubbles generated in the recess (Wb) are removed.
A light detection and ranging (LIDAR) system incorporates a scanning system with random access pointing. The scanning system has a light source that generates a coherent light, a microelectro-mechanical system (MEMS) phased-array that steers the coherent light in a vertical direction, and a resonant scanner that scans the coherent light in a horizontal direction. The coherent light is projected onto a far field scene. The MEMS phased-array steers the coherent light to point the projected light on selected spots on the far field scene in random access fashion.
An illumination optical system is configured to convert an intensity distribution of incident light in a long axis direction from a Gaussian distribution, to thereby bring an intensity distribution of a shaped beam on a modulation surface of an optical modulator in the long axis direction into a top hat distribution, and to guide the incident light to the optical modulator as parallel light in the long axis direction and as convergent light in the short axis direction. A short axis side light shielding part is disposed at a condensing position on a short axis side of a modulated beam which is emitted from the optical modulator and is convergent light on a short axis side and blocks a non-zero-order diffracted beam on the short axis side of the modulated beam.
In a substrate processing apparatus and a substrate processing method for processing a substrate by a processing fluid in a supercritical state in a processing space in a chamber, a heater for heating inside of the chamber below the substrate is arranged in the chamber, the substrate is carried into the processing space and heating by the heater is performed, the process fluid is supplied into the processing space and discharged from the processing space after the processing space is filled with the processing fluid in the supercritical state. The heating is stopped for a predetermined period from a time of introducing the processing fluid in the supercritical state into the processing space. While keeping inside the chamber a temperature suitable for a super-critical process, a temperature change causing a turbulence can be suppressed and the super-critical process to the substrate can be performed properly.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
96.
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MACHINING TUBULAR GUARD
A substrate processing apparatus includes a rotational holding member that rotates a substrate around a predetermined rotational axis while holding the substrate, a liquid supply member that supplies a liquid to the substrate held by the rotational holding member, and a resin-made tubular guard that surrounds the substrate held by the rotational holding member. The tubular guard has an inner peripheral surface and an uneven portion disposed at the inner peripheral surface. The uneven portion has a plurality of recessed portions and a plurality of protruding portions placed between the recessed portions adjacent to each other. The recessed portion has a width smaller than a diameter of a liquid droplet scattering from the substrate held by the rotational holding member and a depth in which the liquid droplet does not come into contact with a bottom portion of the recessed portion in a state in which the liquid droplet is in contact with the protruding portions. The protruding portion has a width that is smaller than the diameter of the liquid droplet and that is smaller than the width of the recessed portion.
A substrate processing method etches a substrate. The substrate processing method includes an oxide layer forming step of oxidizing a surface layer portion of a major surface of the substrate and forming an oxide layer and an oxide layer removing step of forming a polymer film that contains an acid polymer on the major surface of the substrate and removing the oxide layer by the acid polymer contained in the polymer film. The oxide layer forming step and the oxide layer removing step are alternately repeated.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A substrate cleaning device includes a substrate holder that holds a substrate, a cleaning brush that is provided to be movable between a cleaning position for cleaning the substrate held by the substrate holder and a waiting position outward of the substrate held by the substrate holder, and has a cleaning surface capable of cleaning the substrate held by the substrate holder, a remover that is configured such that liquid is transferrable to the remover, and a driver that moves at least one of the cleaning brush and the remover with respect to another one such that at least part of liquid adhering to the cleaning surface is transferred to the remover when the cleaning surface and the remover come close to each other at a position outward of a position above the substrate held by the substrate holder, before the substrate is cleaned by the cleaning brush.
A channel chip (11) comprises a substrate (21), fluid wells (FW), a pair of first electrodes (33a), (33b), and a pair of second electrodes (43a), (43b). A sample fluid and a reference fluid can be injected into the fluid wells (FW). By applying a control voltage, the pair of first electrodes (33a), (33b) can cause a dielectrophoretic force to act on dielectric particles (P1) contained in the sample fluid which has been injected into the fluid wells (FW). The pair of second electrodes (43a), (43b) are arranged at locations different from those of the pair of first electrodes (33a), (33b). The control voltage applied between the pair of first electrodes (33a), (33b) is corrected on the basis of the impedance between the pair of second electrodes (43a), (43b) that has been measured by means of the reference fluid which has been injected into the fluid wells (FW).
C12M 1/00 - Apparatus for enzymology or microbiology
G01N 37/00 - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES - Details not covered by any other group of this subclass
100.
SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD
This substrate cleaning device comprises: a substrate rotation/retention unit that rotates a substrate while retaining the substrate; a first cleaning brush that has a first cleaning surface inclined so as to allow contact with a first bevel region of the substrate retained by the substrate rotation/retention unit; a first drive unit that is configured so as to shift the first cleaning brush between a first contact state, in which the first cleaning surface is in contact with the first bevel region of the substrate rotated by the substrate rotation/retention unit, and a first separated state, in which the first cleaning surface is separated from the first bevel region of the substrate rotated by the substrate rotation/retention unit; and a control unit that controls the first drive unit so that, if a first condition determined in advance has been met, the position of contact of the first cleaning surface with the first bevel region in the first contact state is changed.
