A gas sensor 100 comprises a sensor element 101 and a control device. The sensor element 101 includes an element body, a first measurement pump cell 41, a second measurement pump cell 66, an auxiliary pump cell 50, and a reference electrode 42. The control device: controls the auxiliary pump cell 50 so that the voltage V1 between the reference electrode 42 and an auxiliary pump electrode 51 is at a target value V1*; controls the first measurement pump cell 41 so that the voltage V2 between the reference electrode 42 and a first measurement electrode 44 is at a target value V2*; controls the second measurement pump cell 66 so the voltage V3 between the reference electrode 42 and a second measurement electrode 67 is at a target value V3*; detects specific gas concentration on the basis of a pump current Ip2; and detects the carbon dioxide concentration in a gas being measured on the basis of a pump current Ip3 and a change in the pump current Ip2 that occurs when at least one of the target value V1* and the target value V2* is changed.
This wafer stage 10 is provided with: a ceramic plate 20 which is provided, on the upper surface thereof, with at least a wafer stage part 22; a cooling plate 30 which is bonded to the lower surface of the ceramic plate 20, and has a coolant flow path 32; gas common paths 51b, 52b, 53b which are arranged above the coolant flow path 32; gas introduction paths 51a, 52a, 53a which respectively reach the gas common paths 51b, 52b, 53b from the lower surface of the cooling plate 30; and a plurality of gas distribution paths 51e, 52e, 53e which are respectively provided onto the gas common paths 51b, 52b, 53b. The gas distribution path 53e, which is provided on the outermost periphery of the ceramic plate 20, is disposed in a position where the gas distribution path 53e does not overlap with the coolant flow path 32 when viewed in plan.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
3.
NEGATIVE ELECTRODE PLATE AND ZINC SECONDARY BATTERY
The present invention provides a negative electrode plate that enables a zinc secondary battery to have a prolonged cycle service life. This negative electrode plate is for use in a zinc secondary battery, and contains a polymer and a negative electrode active material that contains ZnO particles and Zn particles. This negative electrode plate has a normal reaction region and a reaction suppression region where the concentration of the polymer is higher than that in the normal reaction region; and if this negative electrode plate is divided into three equal parts in the thickness direction and the three equal parts are defined as an inner layer, a first surface layer and a second surface layer, the surface layers being positioned on the outer side of the inner layer, the inner layer belongs to the normal reaction region and the first surface layer belongs to the reaction suppression region.
The present invention provides a method that makes it possible to adjust thermal uniformity in a placement surface after production of a wafer mounting base. Performed are: a) a step for preparing a wafer mounting base comprising a ceramic substrate that is provided with a placement surface for a wafer and that can be energized and heated and a cooling plate that is joined to the ceramic substrate and that enables cooling via a coolant supplied to a flow path, wherein the cooling plate is constituted by a base part that is provided with a flow path and a cover part that is attachable to and removable from the base part, and that enables opening of the flow path by being removed from the base part; b) a step for attaching the cover part to the base part and measuring a temperature distribution while performing energizing/heating and cooling; c) a step for removing the cover part and locally adjusting flow path shape when the temperature distribution does not satisfy a prescribed criterion; and d) a step for re-measuring the temperature distribution of the wafer mounting base which has an adjusted flow path shape, while performing energization/heating and cooling after attaching the cover part to the base part. Steps c) and d) are repeated until the re-measured temperature distribution satisfies the prescribed criterion.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
Provided is an electrostatic chuck assembly the service life of which can be lengthened several fold during use in a vacuum chamber. This electrostatic chuck assembly comprises a disc-shaped ceramic plate with built-in electrodes serving as an electrostatic chuck, a disc-shaped cooling plate which supports the bottom surface of the ceramic plate with built-in electrodes and which has an annular-shaped or arc-shaped internal space, an annular-shaped or arc-shaped internal fastening member housed in the internal space rotatably about the center axis of the cooling plate, internal thread portions the number of which is a multiple of n (where n represents an integer equal to or greater than 2) and which are provided to the internal fastening member so as to be spaced apart from each other, and n punch holes which are provided to the bottom portion of the cooling plate so as to expose one set of n internal thread portions and which are for bolts to be inserted for fastening the chamber. The internal thread portions are arranged such that another set of n internal thread portions are exposed in the punch holes when the internal fastening member is rotated by a predetermined angle or an angle that is a multiple thereof.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
10.
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
This substrate for a semiconductor device comprises a ceramic substrate and a copper sheet joined to at least one surface of the ceramic substrate. The ceramic substrate has a Cu region having a Cu presence depth of 11.0 to 20.0 μm, the Cu presence depth being measured from the joining interface with the copper sheet and having a cumulative Cu mass concentration which reaches 90%.
The present invention provides a technology with which it is possible to accurately propose favorable trial production conditions for materials even if the parameter space to be searched is wide with respect to the computational resources used. This trial production condition proposal system 1 is a system for proposing material trial production conditions to material developers, and is provided with a regression model construction processing unit 112 and a trial production condition proposal processing unit 113. The regression model construction processing unit 112 executes a regression model construction process on property measurement data representing actual measurement results of material properties. The trial production condition proposal processing unit 113 performs an optimization process to search for optimal trial production conditions for a material using the constructed regression model, and executes a trial production condition proposal process on the basis of the result of the optimization process.
This wafer placement table 10 comprises a ceramic plate 20 that has a wafer placement surface 22a and has an electrode embedded therein, a cooling plate 30 that has a coolant flow path 32 and is made of a metal-ceramic composite material, and a joining layer 40 that joins both the plates 20 and 30. The length from the wafer placement surface 22a to at least one of an upper bottom or a lower bottom of the coolant flow path 32 is not constant across the entirety of the coolant flow path 32 and has locations where the length changes. The cooling plate 30 is a structure obtained by metal-joining of a plurality of plate sections that include a first thin plate section 81 and a second thin plate section 82 that are joined to each other, wherein the first thin plate section 81 has a first flow path section that is a penetrating groove provided so as to have the same shape as the coolant flow path 32 in a plan view, and the second thin plate section 82 has a second flow path section that is a bottomed groove at least a portion of which is provided in a position facing the first flow path section.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
13.
TRIAL PRODUCTION CONDITION PROPOSAL SYSTEM AND TRIAL PRODUCTION CONDITION PROPOSAL METHOD
Provided is technology that enables accurate proposal of a trial production condition for favorable materials even if there is little learning data to be used in the construction of a machine learning model or even if there is a deviation in the learning data distribution. A trial production condition proposal system 1 proposes a material trial production condition to a material developer, the system comprising: a regression model construction processing unit 112; and a trial production condition proposal processing unit 113. The regression model construction processing unit 112 executes a regression model construction process for measured characteristics data representing the results of measuring characteristics of a material. The trial production condition proposal processing unit 113 uses the constructed regression model to search for the optimal trial production condition for the material, and executes a trial production condition process on the basis of the search results. The regression model construction process includes: a process for calculating weight criteria, which are criteria for weighting the measured characteristics data; and a process for weighting the measured characteristics data on the basis of the calculated weight criteria.
This ceramic porous body is used in a gas pipe in which a ceramic porous body is filled in an outer pipe. The ceramic porous body has a porosity of 20% to 60% inclusive.
F01N 13/14 - Exhaust or silencing apparatus characterised by constructional features having thermal insulation
F16L 9/153 - Compound tubes, i.e. made of materials not wholly covered by any one of the preceding groups comprising only layers of metal and concrete with or without reinforcement
16.
GAS SENSOR, AND CONCENTRATION MEASURING METHOD EMPLOYING GAS SENSOR
The present invention makes it possible to accurately measure a low-concentration gas to be measured. Provided are a gas sensor 100 and a method for controlling the same, the gas sensor 100 comprising a sensor element 101 and a control device. The sensor element 101 includes: a substrate part 102; a measured gas distribution cavity 15; an oxygen pump cell 21 including an intra-cavity oxygen pump electrode 22 and an extra-cavity oxygen pump electrode 23; a decomposition pump cell 50 including an intra-cavity decomposition pump electrode 51 and an extra-cavity decomposition pump electrode 23; an intra-cavity detection electrode 44; and a reference electrode 42 provided to be in contact with a reference gas. The control device includes: a pump control unit that operates the decomposition pump cell 50 so that the voltage between the intra-cavity detection electrode 44 and the reference electrode 42 is a predetermined value, to decompose at least a portion of a gas to be measured in gases being measured, and to pump out oxygen generated through the decomposition; and a concentration calculation unit that calculates the concentration of the gas to be measured in the gases being measured on the basis of the value of the voltage between the intra-cavity decomposition pump electrode 51 and the reference electrode 42.
Provided is an EUV transmissive film from which particles are unlikely to be generated even when the film is damaged by any chance. This EUV transmissive film is provided with: a main layer that is formed of metallic beryllium and that has a first face and a second face; and a pair of surface layers that are provided on the first face and the second face of the main layer, and that contain at least one fluoride selected from beryllium fluoride, nitrided beryllium fluoride, oxidized beryllium fluoride, and oxidized-nitrided beryllium fluoride.
Provided is an EUV-transmissive film in which EUV absorption by a protective layer causing a decrease in EUV transmittance can be suppressed, thereby enabling exhibition of high EUV transmittance at the time of exposure. The EUV-transmissive film comprises: a main layer (12) formed of a single layer or a composite layer including two or more layers and having an EUV transmittance of 85% or higher at a wavelength of 13.5 nm; and a protective layer (14) covering at least one side of the main layer and containing, as a major component, at least one selected from the group consisting of amorphous carbon, Cu, Al, and organic resist.
2222222 supplied from the variable capacity tank; a vacuum pump which is connected to the etching chamber and is capable of subjecting the etching chamber and the variable capacity tank to vacuum drawing; a first valve provided between the starting material vessel and the variable capacity tank; a second valve provided between the variable capacity tank and the etching chamber; and a third valve provided between the etching chamber and the vacuum pump.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
21.
CERAMIC SUBSTRATE, AND SEMICONDUCTOR DEVICE SUBSTRATE PROVIDED WITH SAME
23222 are located adjacent to each other is defined as A, when the concentration of Si, which is the first component of the glassy substance, as expressed in terms of an oxide is defined as B, and when the total mass concentration of Ca, Sr, and Ba, which are each the second component of the glassy substance, as expressed in terms of an oxide is defined as C, the value of A/(B×C) is 7.1×10-4 or less.
Provided is an acid gas collection method that is capable of improving the amount of acid gas desorbed from an acid gas adsorbent. An acid gas collection method according to an embodiment of the present invention comprises an adsorption step and a desorption step. In the adsorption step, a gas to be processed which contains an acid gas is supplied to an acid gas adsorption device that includes an acid gas adsorbent, and the acid gas is adsorbed by the acid gas adsorbent. In the desorption step, the acid gas adsorption device is heated such that the acid gas is desorbed from the acid gas adsorbent. The desorption step includes a first desorption step and a second desorption step at least after the first desorption step. In the first desorption step, a first desorption gas is supplied to the acid gas adsorption device, and acid gas that is desorbed from the acid gas adsorbent is collected along with the first desorption gas. In the second desorption step, a second desorption gas having a lower humidity than the first desorption gas is supplied to the acid gas adsorption device, and acid gas that is desorbed from the acid gas adsorbent is collected along with the second desorption gas.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
Provided is an acidic gas adsorption device that can stably desorb acidic gas from an acidic gas adsorbent. An acidic gas adsorption device according to an embodiment of the present invention comprises first adsorption parts and second adsorption parts. The second adsorption parts are disposed at intervals on the downstream side in a passage direction of the gas to be treated with respect to the first adsorption parts. The first adsorption parts include a first flow path, and the second adsorption parts include a second flow path. A first desorbed gas flow path in communication with the first flow path and the second flow path is formed between the first adsorption parts and the second adsorption parts in the passage direction of the gas to be treated.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
24.
METHOD FOR PRODUCING LIQUID FUEL AND LIQUID FUEL SYNTHESIS SYSTEM
The main purpose of the present invention is to suppress reductions in the reaction efficiency in the vicinity of the gas flow inlet of a reactor for a conversion reaction to a liquid fuel of a starting gas that contains carbon oxide and hydrogen. A method according to an embodiment of the present invention for producing liquid fuel comprises: introducing, into a catalyst-containing reactor, a starting gas that contains at least carbon oxide and hydrogen; and producing, in the presence of the catalyst, a liquid fuel from the starting gas by a conversion reaction. The starting gas additionally contains oxygen, and the ratio in the carbon oxide of the carbon monoxide concentration to the carbon dioxide concentration is not greater than 0.9.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
C07C 29/151 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
In the present invention, an upper base material 20 of a wafer placement table 10 is provided with a ceramic base material 21 that has an electrode 22 embedded therein, the upper base material 20 having a wafer placement surface 21a on the upper surface of the ceramic base material 21. A lower base material 30 is disposed on the lower-surface side of the upper base material, the lower base material 30 being provided with refrigerant flow paths 35. Through-holes 36 penetrate through the lower base material 30 in the up-down direction. Protrusions 38 are provided in the form of dots on the entirety of the upper surface of the lower base material 30, the protrusions 38 being in contact with the lower surface of the upper base material 20. A heat dissipation sheet 40 has protrusion insertion holes 44 into which the protrusions 38 are inserted, the heat dissipation sheet 40 being disposed between the upper base material 20 and the lower base material 30 in a compressed state. Threaded holes 24 are provided in the lower surface of the upper base material 20 at positions that face the through-holes 36, and screw members 50 are inserted into the through-holes 36 from the lower surface of the lower base material 30 and threaded into the threaded holes 24.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An upper base material 20 of this wafer placement table 10 comprises a ceramic base material 21 that has an electrode 22 built therein, and has a wafer placement surface 21a on the upper surface of the ceramic base material 21. A lower base material 30 is disposed on the lower surface side of the upper base material 20 and comprises a coolant flow path 35. Through-holes 36 penetrate the lower base material 30 in the up-down direction. Protrusions 38 are provided in a dotted shape over the entire upper surface of the lower base material 30 and abut the lower surface of the upper base material 20. A heat dissipation sheet 40 has protrusion insertion holes 44 into which the protrusions 38 are inserted, and is disposed in a compressed state between the upper base material 20 and the lower base material 30. Screw holes 24 are provided in positions facing the through-holes 36 on the lower surface of the upper base material 20, and screw members 50 are inserted into the through-holes 36 from the lower surface of the lower base material 30 and are screwed into the screw holes 24. A heat conductive paste 60 is interposed between the side surfaces of the protrusions 38 and the inner circumferential surfaces of the protrusion insertion holes 44 of the heat dissipation sheet 40.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is an acid gas collection method with which it is possible to reduce oxidation degradation and volatilization-caused abrasion of an acid gas adsorbing material. The acid gas collection method according to an embodiment of the present invention sequentially includes an absorbing step, a desorbing step, and a cooling step. In the absorbing step, a gas to be processed containing an acid gas is supplied to an acid gas absorbing device including an acid gas adsorbing material, and the acid gas is absorbed by the acid gas adsorbing material. In the desorbing step, the acid gas absorbing device is heated, and the acid gas is desorbed from the acid gas adsorbing material. In the cooling step, the acid gas absorbing device is cooled by a cooling medium with a temperature less than ambient temperature.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/22 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
Provided is an acidic gas recovery system with which it is possible to facilitate increase in the amount of acidic gas adsorption and also to suppress deterioration of an acidic gas adsorbing material. An acidic gas recovery system according to an embodiment of the present invention is provided with: a plurality of acidic gas adsorption devices that include an acidic gas adsorbing material; and a fluid supply line. Through the fluid supply line, a fluid is distributed and supplied to each of the plurality of acidic gas absorption devices. The fluid supply line is provided with a branch part and a plurality of flow divisional parts. Each of the plurality of flow dividing parts connects between the branch part and the corresponding acidic gas adsorption device. The plurality of flow dividing parts each have a resistor disposed therein.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
An acidic-gas adsorption device is provided with which the efficiency of acidic-gas adsorption can be improved. The acidic-gas adsorption device according to an embodiment of the present invention comprises: an acidic-gas adsorption part through which a fluid can pass in a given direction; and one case. The acidic-gas adsorption part includes acidic-gas adsorbents capable of adsorbing acidic gases. The acidic-gas adsorption part comprises a first adsorption part and a second adsorption part disposed downstream from the first adsorption part along the fluid-passing direction. The first adsorption part includes a first acidic-gas adsorbent, which is relatively low in the ability to adsorb acidic gases but is high in acidic-gas adsorption capacity. The second adsorption part includes a second acidic-gas adsorbent, which is relatively high in the ability to adsorb acidic gases but is low in acidic-gas adsorption capacity. The one case accommodates both the first adsorption part and the second adsorption part.
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
The present invention provides an acidic-gas adsorption device that allows partial replacement of a deteriorated acidic-gas adsorption part to enable a reduction in running costs. An acidic-gas adsorption device according to an embodiment of the present invention includes: an acidic-gas adsorption part through which a fluid can pass in a predetermined direction; and one case. The acidic-gas adsorption part includes an acidic-gas adsorption member capable of adsorbing acidic gas. The acidic-gas adsorption part is divided into at least a first adsorption part including an upstream end surface in a fluid passage direction and a second adsorption part disposed on the downstream side of the first adsorption part in the fluid passage direction. The one case collectively houses the first adsorption part and the second adsorption part. The first adsorption part and/or the second adsorption part is divided into multiple parts in a direction intersecting the fluid passage direction.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
31.
LIQUID FUEL PRODUCTION SYSTEM AND LIQUID FUEL PRODUCTION METHOD
22 supply source and/or cooling energy in a liquid fuel production system. According to an embodiment of the present invention, provided is a liquid fuel production system comprising: a gas adsorption and desorption unit that adsorbs a prescribed gas A and desorbs the prescribed gas A when heated; a heat-conducting medium supply unit that supplies, to the gas adsorption and desorption unit, a heat-conducting medium for heating the gas adsorption and desorption unit; a liquid fuel synthesis unit that has a first gas flow path housing a catalyst which progresses a conversion reaction from a raw material gas containing at least carbon dioxide and hydrogen into a liquid fuel, and a second gas flow path through which a temperature-adjusting gas for adjusting the temperature of the first gas flow path flows to cause a first flow-out gas to flow out of the first gas flow path and a second flow-out gas to flow out of the second gas flow path; and a heat exchanger that exchanges heat between the second flow-out gas and the heat-conducting medium to heat the heat-conducting medium. The second flow-out gas contains a condensable gas.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
22 supply source and/or a cooling energy in a liquid fuel production system. According to an embodiment of the present invention, a liquid fuel production system is provided, which comprises: a gas adsorption/desorption unit which adsorbs a specific gas A and desorbs the gas A by heating; a heat transmitting medium supply unit which supplies a heat transmitting medium for heating the gas adsorption/desorption unit to the gas adsorption/desorption unit; a liquid fuel synthesis unit which has a first gas flow path and a second gas flow path, in which the first gas flow path accommodates a catalyst for facilitating a conversion reaction from a raw material gas containing at least carbon dioxide and hydrogen to a liquid fuel, the second gas flow path allows a temperature-controlling gas for controlling the temperature of the first gas flow path to pass therethrough, a first effluent gas flows out through the first gas flow path, and a second effluent gas flows out through the second gas flow path; and a heat exchanger which performs the heat exchange between the first effluent gas and the heat transmitting medium to heat the heat transmitting medium. In the liquid fuel production system, the first effluent gas comprises a condensable gas.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
The main purpose of the present invention is to lessen the temperature difference between the gas temperature at the inlet and the gas temperature at the outlet of a reactor in a reaction that converts a raw material gas containing carbon oxides and hydrogen into a liquid fuel. The method for producing a liquid fuel according to an embodiment of the present invention includes allowing a raw material gas containing at least carbon oxides and hydrogen to flow into a reactor housing a catalyst and generating a liquid fuel from the raw material gas by a conversion reaction in the presence of the catalyst. The raw material gas also contains an inert gas, and the ratio of the carbon monoxide concentration to the carbon dioxide concentration in the carbon oxides is 0.9 or less.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
C07C 29/151 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
The main purpose of the present invention is to prevent the deterioration in reaction yield in a conversion reaction from a raw material gas comprising hydrogen and carbon oxide to a liquid fuel. A liquid fuel production system according to an embodiment of the present invention is provided with: a liquid fuel synthesis unit which allows a conversion reaction from a raw material gas containing at least hydrogen and carbon oxide to a liquid fuel to proceed; a raw material gas supply unit which supplies the raw material gas into the liquid fuel synthesis unit; and a raw material gas circulation unit which re-supplies a remaining portion of the raw material gas, which contains an unreacted portion of the hydrogen, an unreacted portion of the carbon oxide and an acidic by-product of the conversion reaction, from the liquid fuel synthesis unit into the raw material gas supply unit. In the liquid fuel production system, the raw material gas supply unit includes: a mixing unit which mixes an amine compound with the remaining portion of the raw material gas in the presence of water vapor; and a water removal unit which removes a neutralization product between the amine compound and the acidic by-product together with condensed water of the water vapor.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
Provided is an SiC substrate with which breaking and cracking during substrate processing, such as grinding, polishing, cutting, and the like, can be reduced. This SiC substrate includes a biaxially oriented SiC layer. The SiC substrate and the biaxially oriented SiC layer have an off angle. In an X-ray topography (XRT) image of this SiC substrate obtained by performing XRT measurement of a 4 mm square region in the biaxially oriented SiC layer, the ratio of the number of basal plane dislocations (BPD) at which the absolute value of the acute angle side of an angle formed by a BPD progression direction and the [11-20] direction is 15° or less to the total number of the basal plane dislocations is 60% or greater. The BPD progression direction is defined as a direction, in the XRT image, of a line segment that connects an end point of a linearly observed BPD and a point separated from the end point by 150 μm along the linear BPD.
METHOD FOR INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD FOR PRODUCING GROUP-III ELEMENT NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Provided is a group-III element nitride substrate that is capable of having an improved yield. A method for inspecting a group-III element nitride substrate according to an embodiment of the present invention comprises: preparing a group-III element nitride substrate that is doped with an element other than group-III elements; irradiating the group-III element nitride substrate with excitation energy; and measuring the full width at half maximum of the band edge emission in an emission spectrum obtained by the irradiation.
This refractory material is bonded to a SiC-containing aggregate by a bonding part composed of Si, Al, O, and N. According to the refractory material, the proportion of SiC in the refractory material is 60-90 mass%, and the proportions of respective elements constituting the bonding part are 0.1-1.1 mass% for Si, 4-21 mass% for Al, 4.8-19 mass% for O, and 7.2-13.1 mass% for N.
C04B 35/567 - Refractories from grain sized mixtures
C04B 35/599 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon oxynitrides based on silicon aluminium oxynitrides (SIALONS)
A wafer placement table (10) includes: a ceramic base material (20) having a wafer mounting surface (20a); a heater electrode (30) embedded in the ceramic base material (20); a planar upper jumper layer (40) provided in a layer different from the heater electrode (30); an internal via (42) connecting the upper jumper layer (40) and one end of the heater electrode (30); and a power supply via (46) connected to the upper jumper layer (40). A center-to-center distance between the internal via (42) and the power supply via (46) in the upper jumper layer (40) is 50 mm or more.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer placement table 10 is an example of a member for a semiconductor manufacturing device and comprises a ceramic plate 20, a ceramic plate through-hole 24, a base plate 30, a base plate through-hole 34, an insulating sleeve 50, and a sleeve through-hole 54. The sleeve through-hole 54 vertically penetrates the insulating sleeve 50 and communicates with the ceramic plate through-hole 24. The insulating sleeve 50 is inserted into the base plate through-hole 34 and the outer circumferential surface 50c of the insulating sleeve 50 is adhered to the inner circumferential surface of the base plate through-hole 34 via an adhesive layer 60. The insulating sleeve 50 has at least one annular outer circumferential groove 52 in a portion which is of the outer circumferential surface 50c of the insulating sleeve 50 and is other than a top end 56 of the insulating sleeve 50.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
This sensor element is provided with an oxygen concentration adjustment pump cell including an inside pump electrode, which is provided on a base portion configured from a solid electrolyte having oxygen ion conductivity, and which is a porous cermet electrode of a noble metal and the solid electrolyte, the inside pump electrode being provided facing a first internal cavity into which a gas being measured is introduced from the outside under a predetermined diffusion resistance, and an extra-cavity pump electrode provided outside the first internal cavity, wherein: a partial electrode portion of the inside pump electrode opposing the extra-cavity pump electrode across a portion of the base portion has a nano-level mixed region of the noble metal and the solid electrolyte; an abundance ratio of the nano-level mixed region in a central portion of the partial electrode portion is 50% to 90%; and the abundance ratio of the nano-level mixed region in a distal end portion and a rear end portion is at least 3% less than the abundance ratio of the nano-level mixed region in the central portion.
Provided is a negative electrode plate that suppresses in-plane diffusion of zinc acid ions and makes it possible to delay a shape change. The negative electrode plate comprises: a negative electrode current collector; a partition wall that is provided to at least one surface of the negative electrode current collector and defines a plurality of segments that are separated from one another; and a negative electrode active material that is filled into each of the segments, the negative electrode active material containing at least one selected from the group consisting of zinc, zinc oxide, zinc alloys, and zinc compounds.
H01M 50/446 - Composite material consisting of a mixture of organic and inorganic materials
H01M 50/474 - Spacing elements inside cells other than separators, membranes or diaphragms; Manufacturing processes thereof characterised by their position inside the cells
H01M 50/477 - Spacing elements inside cells other than separators, membranes or diaphragms; Manufacturing processes thereof characterised by their shape
This sensor element comprises: an oxygen-concentration-adjusting pump cell including an inner-side pump electrode that is a porous cermet electrode composed of a rare metal and a solid electrolyte, the inner-side pump electrode being provided to a base part composed of a solid electrolyte and facing a first internal void into which a gas being measured is introduced from the outside, the oxygen-concentration-adjusting pump cell also including an out-of-void pump electrode that is provided outside of the first internal void; and a measurement pump cell including an NOx detection electrode that is provided to a measurement internal void communicating with the first internal void, and an out-of-void pump electrode. A measurement electrode and a parallel electrode that faces the out-of-void pump electrode of the inner-side pump electrode across a portion of the base part have a nano-level mixture region of the rare metal and the solid electrolyte. A first presence ratio that is the ratio of the mixture region present in the parallel electrode is 40-60%. The proportion of a second presence ratio that is the ratio of the mixture region present in the measurement electrode to the first presence ratio is 0.03-0.1.
A separation membrane module (1) comprises: a housing (20) having a cylindrical shape; a reactor (10) having a columnar shape, housed in the housing (20), and extending in the longitudinal direction; and a first flange (30) having an annular shape and surrounding a first end part (10a) of the reactor (10). In the longitudinal direction, a first end surface (F2) of the reactor (10) is located outside an end surface (K1) of the first flange (30).
This separation membrane module comprises a reactor (10) having a columnar shape, a first flange (30) having an annular shape and surrounding a first end part (10a) of the reactor (10), and a first intermediate part (50) disposed between a first end surface (F2) of the reactor 10 and a housing (20).
A separation membrane module (1) comprises a cylindrical housing (20), a monolith reactor (10) housed in the housing (20), and a first flow straightening unit (50) housed in the housing (20). The housing (20) has an inner circumferential surface (G1), and a sweeping gas supply port (T4) formed on the inner circumferential surface (G1) and through which a sweeping gas flows. The reactor (10) has an outer circumferential surface (F1), and a first slit (17) formed on the outer circumferential surface (F1) and through which the sweeping gas flows. The first flow straightening unit (50) has a first flow straightening surface (H1) that rectifies the turbulence of the sweeping gas between the sweeping gas supply port (T4) and the first slit (17).
C10L 1/02 - Liquid carbonaceous fuels essentially based on components consisting of carbon, hydrogen, and oxygen only
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
46.
CERAMIC WIRING MEMBER MOTHERBOARD AND CERAMIC WIRING MEMBER
A ceramic wiring member motherboard (100) is formed such that, as viewed from the thickness direction, a plurality of ceramic wiring members (110, 120) having a rectangular shape are laid side by side and are integrally connected. The plurality of ceramic wiring members (110, 120) include first ceramic wiring members (110) and second ceramic wiring members (120). Each of the first ceramic wiring members (110) and each of the second ceramic wiring members (120) are disposed such that a first side (111) of the first ceramic wiring member (110) and a second side (121) of the second ceramic wiring member (120) partially overlap. A first via hole (131) and a first via conductor (28) are formed in a region where the first side (111) and the second side (121) overlap. The first ceramic wiring member (110) and the second ceramic wiring member (120) are point symmetrically disposed with respect to the first via conductor (28).
A wafer mounting stage 10, which is one example of a member for a semiconductor manufacturing apparatus, comprises a ceramic plate 20, a ceramic plate through hole 24, a base plate 30, a base plate through hole 34, an insulation sleeve 50, and a sleeve through hole 54. The sleeve through hole 54 penetrates the insulation sleeve 50 in the vertical direction and communicates with the ceramic plate through hole 24. The insulation sleeve 50 is bonded to the base plate through hole 34 via a bonding layer 60. The insulation sleeve 50 includes a tool engagement section (female thread section 52) capable of engaging with an external tool. When engaged with the external tool, the tool engagement section transfers the rotational torque of the external tool to the insulation sleeve 50.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a core substrate (601) for constituting an interposer (700) on which a semiconductor element (811) is mounted, an inductor being built into the core substrate (601) . The core substrate (601) comprises a ceramic substrate (100), a conductor portion (201), and a magnetic material portion (301). The ceramic substrate (100) has a first surface (SF1) and a second surface (SF2) opposite the first surface (SF1) in the thickness direction, and includes a through-hole (HL1) between the first surface (SF1) and the second surface (SF2). The conductor portion (201) passes through the through-hole (HL1), and is made of a sintered material containing a sintered metal. The magnetic material portion (301) surrounds the conductor portion (201) in the through-hole (HL1), and is made of a ceramic material. The ceramic substrate (100) and the magnetic material portion (301) are inorganically bonded to each other, and the magnetic material portion (301) and the conductor portion (201) are inorganically bonded to each other.
Conductor parts (201A, 201B) pass through a through-hole (HL) in an insulator substrate (100) and are composed of a sintered material including a sintered metal. A magnetic body part (301) surrounds the conductor parts (201A, 201B) in the through-hole (HL), is composed of a ceramic, is inorganically joined to the conductor parts (201A, 201B), and constitutes an inductor with the conductor parts (201A, 201B). Wiring parts (441A, 441B) include connecting vias (441vA, 441vB) that each have a bottom surface electrically connected to the conductor parts (201A, 201B). The bottom surfaces of the connecting vias (441vA, 441vB) are spaced away from the magnetic body part (301).
This package (51) has a cavity (CV) and includes a heat-dissipating plate (11) and a ceramic frame (21). The heat-dissipating plate (11) has: a main surface (P2) that comprises a first metal-containing sintering material, the main surface (P2) including a cavity surface that faces the cavity; a heat-dissipating surface (P1) that is on the side opposite from the main surface (P2); and a side surface (P4b) that is between the heat-dissipating surface (P1) and the main surface (P2). The ceramic frame (21) has an inner surface (P3) that surrounds the cavity (CV), and an outer surface (P4a) that is on the side opposite from the inner surface (P3). The main surface (P2) and/or the side surface (P4b) of the heat-dissipating plate (11) includes a joining surface that is directly joined to the ceramic frame (21).
Provided is a waveguide element in which a resin material substrate can be supported by a supporting substrate and thermal resistance can be reduced. A waveguide element according to an embodiment of the present invention is capable of guiding electromagnetic waves having a frequency of 30 GHz to 20 THz. The waveguide element comprises: a resin material substrate; a conductor layer provided on the upper portion of the resin material substrate; and a supporting substrate positioned on the opposite side of the resin material substrate from the conductor layer wherein the resin material substrate and the supporting substrate are directly bonded.
This solid electrolyte contains Li, Mα, Mβ, Mγ, and Cl. The Mα is at least one element selected from the group consisting of Zr and Hf; the Mβ is at least one element selected from the group consisting of Ta and Nb; and the Mγ is at least one element selected from the group consisting of Gd, Yb, Dy, Er, Ho, Eu, and Sc. A solid electrolyte having high lithium ion conductivity and high stability can thereby be provided.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
Provided is an age-hardenable copper alloy bonded body that achieves a very high bonding strength. This copper alloy bonded body is formed from a plurality of members that are made of an age-hardenable copper alloy and that are diffusion bonded to each other. In said copper alloy bonded body, the bonding surface between the plurality of members remains, and (i) the age-hardenable copper alloy is a beryllium-copper alloy that has a beryllium content of 0.7 wt% or less, and inclusions constituted by an oxide, a carbide, and/or an intermetallic compound have an area ratio of 7.5% or less in an HAADF-STEM image of the rectangular cross-section which includes the bonding surface and which has a long side of 800 nm and a short side of 400 nm, or (ii) the age-hardenable copper alloy is a copper alloy that does not contain beryllium, and inclusions constituted by an oxide, a carbide, and/or an intermetallic compound have an area ratio of 30% or less in an HAADF-STEM image of the rectangular cross-section which includes the bonding surface and which has a long side of 800 nm and a short side of 400 nm.
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
Provided is a joined body of an age-hardenable copper alloy in which an extremely high joining strength is achieved. The copper alloy joined body is constituted from a plurality of members of age-hardenable copper alloy diffusion-bonded to each other, and joining interfaces between the plurality of members remain therein. The copper alloy joined body is such that the beryllium content of the age-hardenable copper alloy is 0.7 wt% or less, and in a laser microscope image of a cross-section that includes the joining interfaces, the proportion of the total length of line segments corresponding to discontinuous regions relative to the total length of a joining interface line defined along the joining interfaces and positions that were joining interfaces is 3.5% or above. The discontinuous regions are defined as regions in which when a plurality of perpendicular lines are drawn at a pitch of 5 μm with respect to the joining interface line, three or more mutually adjacent perpendicular lines do not intersect with the remaining joining interfaces.
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
A solid electrolyte according to the present invention contains A, Mα, Mβ, Mγ and Cl; A represents at least one element that is selected from the group consisting of Li and Na; Mα represents at least one element that is selected from the group consisting of Zr and Hf; Mβ represents at least one element that is selected from the group consisting of Ta and Nb; Mγ represents at least one element that is selected from the group consisting of Gd, Yb, Dy, Er, Ho, Eu and Sc; and the amount of substance of Cl is higher than the amount of substance of A. Consequently, the present invention is able to provide a solid electrolyte which has a high ionic conductivity and high stability.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
This wafer placement stage 10 comprises: a ceramic base 21 having a wafer placement surface 21a on the upper surface thereof, an electrode 22 being built into the ceramic base 21; a first cooling base 23 made from a composite material of a metal and a ceramic or made from a low-thermal-expansion metal material; a metal joining layer 25 that joins the lower surface of the ceramic base 21 and the upper surface of the first cooling base 23; a second cooling base 30 having a refrigerant flow path 35 formed in the interior thereof; a heat dissipation sheet 40 disposed between the lower surface of the first cooling base 23 and the upper surface of the second cooling base 30; a screw hole 24 that is opened at the lower surface of the first cooling base 23; a through-hole 36 provided at a position facing the screw hole 24, the through-hole 36 penetrating the second cooling base 30 in the vertical direction; and a screw member 50 that is inserted into the through-hole 36 from the lower surface of the second cooling base 30 and is screwed into the screw hole 24.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
In the present invention, a wafer placement table 10 comprises a gas outflow passage 56, a gas common passage 54, and a gas inflow passage 52. The gas outflow passage 56 is open to a wafer placement surface 21, and a plurality of gas outflow passages are provided to the wafer placement table 10. The gas common passage 54 is provided in an interior of the wafer placement table 10 and is in communication with the plurality of gas outflow passages 56. The gas inflow passage 52 is in communication with the gas common passage 54 from a surface of the wafer placement table 10, said surface being on the opposite side from the wafer placement surface 21. The number of gas inflow passages 52 is lower than the number of gas outflow passages 56 that are in communication with the gas common passage 54. Among the plurality of gas outflow passages 56, passages that are closer to the gas inflow passage 52 have a greater gas passing resistance compared to passages that are farther from the gas inflow passage 52.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer mounting stand 10 comprises: a ceramic plate 20; a conductive base plate 30; a gas common passage 54 that is provided inside the base plate 30; a plurality of gas outflow passages 56 that are provided so as to reach a wafer mounting surface from the gas common passage 54; a gas inflow passage 52 that is provided so as to achieve communication with the gas common passage 54 from a lower surface of the base plate 30; and an insulating sleeve 60 that is disposed in a base plate through hole 31 and that is one member which cannot be separated. The insulating sleeve 60 has a first communication hole 64 that constitutes a portion of the gas common passage 54, and a second communication hole 66 that is provided so as to reach an upper surface of the insulating sleeve 60 from the first communication hole 64, and that constitutes a portion of the gas outflow passages 56.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a composite substrate that can contribute to improving the performance of a SAW filter. A composite substrate according to an embodiment of the present invention has: a support substrate having an upper surface and a lower surface opposite each other; a piezoelectric layer arranged on the upper surface side of the support substrate; and an intermediate layer arranged between the support substrate and the piezoelectric layer. A low crystallinity region in which the crystallinity is low compared to a region positioned on the lower surface side is formed on an end section on the upper surface side of the support substrate.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03H 9/25 - Constructional features of resonators using surface acoustic waves
61.
REGENERATION METHOD FOR ACID-GAS ADSORPTION DEVICE, MANUFACTURING METHOD FOR ACID-GAS ADSORPTION DEVICE, AND OPERATING METHOD FOR ACID-GAS ADSORPTION DEVICE
Provided are: a regeneration method for an acid-gas adsorption device and an operating method for an acid-gas adsorption device, the methods being capable of smoothly recovering the acid-gas recovery performance and reducing running costs; and a manufacturing method for an acid-gas adsorption device, the method being capable of manufacturing an acid-gas adsorption device achieving superior acid-gas recovery performance. A regeneration method for an acid-gas adsorption device according to an embodiment of the present invention includes: a step for causing an acid gas to be adsorbed by an acid-gas adsorbent by supplying the acid gas to an acid-gas adsorption device so as to come into contact with an acid-gas adsorbing layer; a step for causing the acid gas to be desorbed from the acid-gas adsorbent; and a step for supplying the acid-gas adsorbent to the acid-gas adsorbing layer of the acid-gas adsorption device, which has been subjected to the step for causing the acid gas to be adsorbed and the step for causing the acid gas to be desorbed, so that the acid-gas adsorbent is attached to the acid-gas adsorbing layer.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
B01J 20/04 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of alkali metals, alkaline earth metals or magnesium
B01J 20/20 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising carbon obtained by carbonising processes
B01J 20/22 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
This wafer placement table 10 comprises an upper base material 20, a lower base material 30, through-holes 36, screw holes 24, and screw members 50. The upper base material 20 comprises a ceramic base material 21 that has an electrode 22 embedded therein, and has a wafer placement surface 21a on the upper surface of the ceramic base material 21. The lower base material 30 comprises refrigerant flow path grooves 34 that are disposed at the surface opposite the wafer placement surface 21a of the upper base material 20, and that constitute side walls and the bottom of refrigerant flow paths 32. The through-holes 36 pass through the lower base material 30 in the vertical direction so as to intersect the refrigerant flow paths 32. The screw holes 24 are provided at positions facing the through-holes 36 in the lower surface of the upper base material 20. The screw members 50 are inserted from the lower surface of the lower base material 30 into the through-holes 36 and are screwed into the screw holes 24. The refrigerant is configured so as not to leak out from the through-holes 36 onto the lower surface of the lower base material 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
63.
COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13 ELEMENT NITRIDE
[Problem] In a composite substrate having a Group 13 element nitride semiconductor substrate and a support substrate bonded to the Group 13 element nitride semiconductor substrate, when an epitaxial film is grown on the Group 13 element nitride semiconductor substrate, the warpage of the composite substrate is suppressed, and the in-plane sheet resistance distribution of a HEMT structure formed on the composite substrate through epitaxial growth is suppressed. [Solution] This composite substrate 3 comprises: a Group 13 element nitride semiconductor substrate 2 having a first principal surface 2a and a second principal surface 2b; and a support substrate 1 having a bonding surface 1a bonded to the first principal surface 2a of the Group 13 element nitride semiconductor substrate 2. The bonding region of the support substrate 1 is composed of: silicon carbide having an average micropipe density of 10 cm-2to 100 cm-2 in the bonding surface 1a of the support substrate 1; or synthetic diamond having an atomic number ratio of nitrogen atoms to carbon atoms of 500-2,000 ppm.
Provided is a gas sensor that can maintain high detection accuracy of a measurement target gas among gases to be measured. This gas sensor 100, which detects a measurement target gas among gases to be measured, includes a sensor element 101 and a control device for controlling the sensor element 101, wherein the control device includes: a storage unit that stores, in advance, a required oxygen amount that should be present inside a reference gas chamber 43 when the oxygen concentration of the reference gas inside the reference gas chamber 43 is a prescribed concentration; and a processing unit that performs a refresh process which causes current to flow between a pump electrode 23 provided at a position different than the inside of the reference gas chamber 43, and a reference electrode 42 provided inside of the reference gas chamber 43, pumps oxygen present inside the reference gas chamber 43 from the reference gas chamber 43, and thereafter pumps oxygen of the required oxygen amount stored in advance by the storage unit to the reference gas chamber 43.
Provided are: a regeneration method for an acidic gas adsorption device that can reduce running costs; and a manufacturing method for the acidic gas adsorption device. A regeneration method for an acidic gas adsorption device according to an embodiment of the present invention includes: a step for supplying an acidic gas to the acidic adsorption device such that the acidic gas comes into contact with an acidic gas adsorption layer, causing an acidic gas adsorbent to adsorb the acidic gas; a step for desorbing the acidic gas from the acidic gas adsorbent; a step for pulverizing the acidic gas desorption device with which the step for adsorbing the acidic gas and the step for desorbing the acidic gas were carried out, to obtain a recycled powder material; and a step for molding a base material from the recycled powder material, and forming an acidic gas adsorption layer containing an acidic gas adsorbing material on the surface of the base material.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
C22C 29/08 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
C22C 1/05 - Mixtures of metal powder with non-metallic powder
A sensor element 101 comprises an element body (layers 1-6), a reference electrode 42, an outside pump electrode 23, a conducting part 77 that has a connector electrode 71 and a lead section 78 for the reference electrode, and a lead insulating layer 79. An internal lead line 78b of the lead section 78 for the reference electrode allows a reference gas to flow to the reference electrode 42, said reference gas serving as a reference for detecting the concentration of a specific gas in a gas under measurement. A region that is 50% or more, from an end section on the reference electrode 42 side, of the total area of the lead insulating layer 79 in planar view is configured as a dense region with a porosity of 5% or less.
H01L 23/08 - Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
The present invention provides technology that makes it possible to automatically perform preprocessing of property evaluation data when inferring trial production conditions of a material on the basis of the property evaluation data. A trial production condition proposal system 1 comprises a property evaluation data preprocessing unit 111, a feature amount selection processing unit 112, a regression model creation processing unit 113, and a trial production condition proposal processing unit 114. The property evaluation data preprocessing unit 111 performs preprocessing with respect to property evaluation data that represents the evaluation results of a property of a material. The feature amount selection processing unit 112 performs feature amount selection processing for the preprocessed property evaluation data. The regression model creation processing unit 113 performs regression model creation processing for the preprocessed property evaluation data, on the basis of the results of the feature amount selection processing. The trial production condition proposal processing unit 114 performs trial production condition proposal processing for the preprocessed property evaluation data, on the basis of a regression model created by the regression model creation processing unit 113.
G16C 60/00 - Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
70.
METHOD FOR OPERATING SEPARATION DEVICE AND SEPARATION DEVICE
This method for operating a separation device using a separation membrane comprises: a process (step S12) for performing normal operation in which a mixed gas including a plurality of kinds of gases is supplied to the separation membrane at a fixed set pressure, whereby a substance in the mixed gas, the substance having high permeability through the separation membrane, is separated from other substances; and a process (step S11) for performing high-pressure processing for supplying the mixed gas to the separation membrane at a higher pressure than the set pressure either when the supply of the mixed gas to the separation membrane is initiated before the normal operation or in middle of the normal operation. By doing so, it is possible to remove an unnecessary substance adhered to the separation membrane and easily improve the permeation performance of the separation membrane.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
71.
HEAT TREATMENT SYSTEM, AND ATMOSPHERE EXCHANGE STRUCTURE PROVIDED IN HEAT TREATMENT FURNACE
This heat treatment system comprises a first supply device, a first heat treatment furnace, a first recovery device, a second supply device, a second heat treatment furnace, and a second recovery device. The first heat treatment furnace comprises: a loading port disposed in the vicinity of the first supply device; an unloading port; a heat treatment unit; and a first conveying device for conveying saggars in a first direction directed from the loading port toward the unloading port of the first heat treatment furnace. The second heat treatment furnace comprises: a loading port disposed in the vicinity of the second supply device; an unloading port; a heat treatment unit; and a second conveying device for conveying saggars in a second direction, opposite to the first direction, from the loading port to the unloading port of the second heat treatment furnace. Each of the first heat treatment furnace and the second heat treatment furnace additionally includes an exchange unit which is disposed between the heat treatment unit and the unloading port, and which isolates the heat treatment unit from the outside of the unloading port. Each exchange unit is provided with openable and closeable doors, which are formed from a heat insulating material, between the exchange unit and the heat treatment unit and between the exchange unit and the unloading port.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-chamber type; Combinations of furnaces
F27B 9/26 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path on or in trucks, sleds, or containers
This porous body design method using a computer causes the computer to execute the following processes, each multiple times: a structure generation process for virtually generating, on the computer, the three-dimensional structure of a porous body on the basis of a generation parameter value for generating a porous body; a characteristic prediction/calculation process for predicting or calculating the characteristics of the porous body having the three-dimensional structure generated by the structure generation process; an evaluation process for evaluating the characteristics of the porous body predicted or calculated by the characteristic prediction/calculation process; and an optimization process for searching for the optimal generation parameter value by changing the generation parameter value. In the porous body design method, the three-dimensional structure of the porous body is determined on the basis of a result of evaluating the characteristics of the porous body by the evaluation process.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
C04B 38/00 - Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
A method for designing a porous body using a computer, wherein the computer is made to execute, a plurality of times each, feature prediction/calculation processing to predict or calculate a feature of the porous body, which has a prescribed three-dimensional structure, evaluation processing to evaluate the feature of the porous body that was predicted or calculated through the feature prediction/calculation processing, and optimization processing to change the connectivity between pores in the three-dimensional structure and search for the optimal connectivity, and the three-dimensional structure of the porous body is determined on the basis of the results of the evaluation of the feature of the porous body from the evaluation processing.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
C04B 38/00 - Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An analysis device 10 comprises: a reception unit 11 that receives a parameter that affects the precipitation of crystals from an analysis target; a prediction unit 13 that, on the basis of the received parameter, predicts the type of crystal form that will precipitate; an evaluation unit 14 that, on the basis of a degree of effect that is the degree to which the parameter will affect the precipitation of crystals from the analysis target, evaluates the relationship between the parameter and the type of crystal form that will precipitate; and a provision unit 15 that provides a user with the type of crystal form that will precipitate and precipitation conditions as information relating to the crystal form of crystals that will precipitate. The present invention thereby provides an analysis device and an analysis method that make it possible to, with regard to an analysis target having polymorphic forms, predict the types of crystal forms that will precipitate and the precipitation conditions for each crystal form.
A powder filling device fills a saggar with powder by compacting the powder. The powder filing device is provided with: a pressing plate for compacting the powder inside the saggar; and a pressing mechanism for pressing the pressing plate against the powder in the saggar. The pressing plate is provided with: a compression plate having a pressing surface that is pressed against the powder to compact the powder; and a plurality of slit plates that are disposed on the bottom surface of the compression plate and extend downward from the pressing surface. The plurality of slit plates are disposed radially when observed in a top view of the powder filling device and the saggar in a state where the saggar is installed in the powder filling device. The distances between each of the plurality of plates and the sidewall of the saggar, in a state where the saggar is installed in the powder filling device, are approximately the same.
A membrane assembly includes a columnar reactor (10), an annular first flange (30) surrounding a first end portion (10a) of the reactor (10), a first intermediate portion (50) to be arranged between a first end surface (F2) of the reactor (10) and a housing (20), and a first bonding material (70) interposed between the first flange (30) and the reactor (10) and between the first intermediate portion (50) and the reactor (10).
B01D 65/00 - Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 19/24 - Stationary reactors without moving elements inside
C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
This ceramic wiring member (1) comprises a body (10) and an electroconductive portion (30). The body (10) includes a tabular portion (11), and a first frame portion (12) surrounding a first cavity (21). The first frame portion (12) includes an electroconductive region (122) disposed so as to include a first end surface (12A). The body (10) includes a pair of first regions (131A, 131B) and second regions (132A, 132B). The electroconductive portion (30) includes first external terminals (31A, 31B), second external terminals (32A, 32B), a ground terminal (33), first internal terminals (36A, 36B), and second internal terminals (37A, 37B). The ground terminal (33) is electrically connected to the electroconductive region (122) without being electrically connected to the first external terminals (31A, 31B), the second external terminals (32A, 32B), the first internal terminals 36A, 36B), or the second internal terminals (37A, 37B).
A separation membrane module (1) includes a tubular housing (20), a columnar reactor (10) housed in the housing (20), an annular first flange (30) surrounding a first end portion (10a) of the reactor (10), and a first bonding material (35) interposed between the first flange (30) and the reactor (10). The housing (20) has a first facing surface (J1) facing an end surface (K1) of the first flange (30) and an inner circumferential surface (G1) facing an outer circumferential surface (L1) of the first flange (30). A coefficient of thermal expansion of the first bonding material (35) is smaller than a coefficient of thermal expansion of the first flange (30). A coefficient of thermal expansion of the reactor (10) is smaller than the coefficient of thermal expansion of the first flange (30).
B01D 65/00 - Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 19/24 - Stationary reactors without moving elements inside
C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
A membrane assembly includes a columnar reactor (10), an annular first flange (30) surrounding a first end portion (10a) of the reactor (10), and a first bonding material (35) interposed between the first flange (30) and the reactor (10). A coefficient of thermal expansion of the first flange (30) is larger than a coefficient of thermal expansion of the first bonding material (35). The coefficient of thermal expansion of the first bonding material (35) is larger than a coefficient of thermal expansion of the reactor (10).
B01D 65/00 - Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 19/24 - Stationary reactors without moving elements inside
C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
A fuel battery cell (10) comprises a hydrogen electrode (2), an oxygen electrode (5), and an electrolyte (3). The electrolyte (3) has: a first portion (101) within 3 μm from a hydrogen electrode-side surface (S3); and a second portion (102) which is more than 3 μm away from the hydrogen electrode-side surface (S3). The first portion (101) and the second portion (102) each contain YSZ. The Y concentration in the first portion (101) is higher than the Y concentration in the second portion (102).
H01M 8/1253 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides the electrolyte containing zirconium oxide
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/00 - Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
H01M 4/86 - Inert electrodes with catalytic activity, e.g. for fuel cells
H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
H01M 8/1213 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material
A fuel battery cell (10) comprises a hydrogen electrode (2), an oxygen electrode (5), and an electrolyte (3). The hydrogen electrode (2) has a first portion (101) that is within 10 μm from an electrolyte-side surface (S2), and a second portion (102) that is more than 10 μm from the electrolyte-side surface (S2). The first portion (101) includes a solid solution of zirconia and a ceria oxide to which a rare earth element is added, and nickel. The second portion (102) includes a ceria oxide to which a rare earth element is added, and nickel.
H01M 4/86 - Inert electrodes with catalytic activity, e.g. for fuel cells
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/00 - Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
H01M 8/1213 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material
H01M 8/1253 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides the electrolyte containing zirconium oxide
This electrochemical cell (10) comprises: a support layer (11); an intermediate layer (12) located on the support layer (11); a hydrogen electrode (13) located on the intermediate layer (12); an electrolyte (14); and an oxygen electrode (16). The support layer (11) is composed of YSZ and Ni. The hydrogen electrode (13) is composed of a ceria oxide having a rare earth element added thereto, and Ni. The intermediate layer (12) is composed of a solid solution of YSZ and a ceria oxide having a rare earth element added thereto, and Ni.
H01M 8/1226 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material characterised by the supporting layer
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/00 - Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
C25B 9/63 - Holders for electrodes; Positioning of the electrodes
H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
H01M 8/1213 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material
In the present invention, a fuel battery cell (10) comprises: a hydrogen electrode (2) containing an ion-conducting material that includes cerium; an oxygen electrode (5); and an electrolyte (3). The hydrogen electrode (2) has a first portion (101) that is within 8 μm from a surface (S2) on the side away from the electrolyte (3), and a second portion (102) that is greater than 8 μm from the surface (S2). The ion conductivity of the first portion (101) is lower than the ion conductivity of the second portion (102).
H01M 8/1213 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/00 - Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
Provided are: a regeneration method for an acid-gas adsorption device, the method enabling smooth recovery of acid-gas recovery performance and reduced running costs; and a manufacturing method for an acid-gas adsorption device, the method enabling the manufacture of an acid-gas adsorption device having a superior acid-gas recovery performance. A regeneration method for an acid-gas adsorption device according to an embodiment of the present invention includes: a step in which a gas including an acid gas is supplied to the acid-gas adsorption device so as to contact an acid-gas adsorption layer, causing an acid gas adsorbent to adsorb the acid gas; a step in which the acid gas is desorbed from the acid gas adsorbent; a step in which, after undergoing the step of adsorbing the acid gas and the step of desorbing the acid gas, the acid-gas adsorption layer of the acid-gas adsorption device is removed from the surface of a base material; and a step in which an acid-gas adsorption layer, which includes a porous carrier and the acid gas adsorbent, is formed on the surface of the base material from which the acid-gas adsorption layer has been removed.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
A firing setter according to the present invention comprises: a mullite layer; a first layer which is provided on the mullite layer and which is made of an oxide containing the elements Zr, Si, and Y; and an yttria layer which is provided on the first layer.
Provided is an upper tab-type zinc secondary battery that is not prone to short-circuiting. This zinc secondary battery comprises: a positive electrode plate including a positive electrode active material layer, and a positive electrode current collector; a positive electrode tab lead extending from an end portion of the positive electrode plate; a negative electrode plate including a negative electrode active material layer including zinc and the like, and a negative electrode current collector; a negative electrode tab lead extending from an end portion of the negative electrode plate; a hydroxide ion-conductive separator; and an electrolyte solution. The positive electrode plate, the positive electrode tab lead, the negative electrode plate, the negative electrode tab lead, and the hydroxide ion-conductive separator are all arranged oriented vertically. The positive electrode tab lead and the negative electrode tab lead extend upwards. Each electrode plate has a non-coated region where the electrode active material layer is not present along the upper edge of the electrode plate. The tab lead is welded to the current collector in said non-coated region, and an insulating tape is affixed to the non-coated region such that the welded portion is covered by the insulating tape.
H01M 50/54 - Connection of several leads or tabs of plate-like electrode stacks, e.g. electrode pole straps or bridges
H01M 50/55 - Terminals characterised by the disposition of the terminals on the cells on the same side of the cell
H01M 50/586 - Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries inside the batteries, e.g. incorrect connections of electrodes
The present invention provides a negative electrode that enables a zinc secondary battery to have a prolonged cycle service life. This negative electrode is used in a zinc secondary battery and comprises: a negative electrode active material that contains ZnO particles and Zn particles; and a binder that is a mixture of binder particles, which are formed from a binder resin, and binder fibers, which are formed from a binder resin. In an image analysis of the negative electrode, the average fiber diameter of the binder fibers is 0.05-0.17 μm, and the fiberization rate, which is the ratio of the area of the binder fibers to the total area of the binder particles and the binder fibers, is 20-70%.
[Problem] To provide a joint body that enables improvement of a Q value of an elastic wave element. [Solution] A joint body 7 is provided with a support substrate 1 and a piezoelectric material layer 2C joined to the support substrate 1. The piezoelectric material layer 2C has a first main surface 9 joined to the support substrate 1 and a second main surface 3a opposite to the first main surface 9. The piezoelectric material layer 2C has an argon atom-containing layer 3 exposed at the second main surface 3a.
The present invention provides a group III element nitride substrate in which the occurrence of cracking is suppressed. A group III element nitride substrate according to an embodiment of the present invention has a first main surface and a second main surface opposite each other, wherein the thermal conductivity of the group III element nitride in an a-axis direction at prescribed sites in the substrate plane is greater than the thermal conductivity of the group III element nitride in an m-axis direction. The thermal conductivity in the a-axis direction at the prescribed sites in the substrate plane may be up to 2% greater than the thermal conductivity in the m-axis direction.
The present invention provides a group III element nitride substrate in which the occurrence of cracks is suppressed. A group III element nitride substrate according to an embodiment of the present invention has a first main surface and a second main surface opposite each other, wherein the thermal conductivity of the group III element nitride in an m-axis direction at prescribed sites in the substrate plane is greater than the thermal conductivity of the group III element nitride in an a-axis direction. The thermal conductivity in the m-axis direction at the prescribed sites in the substrate plane may be at least 2% greater than the thermal conductivity in the a-axis direction.
[Problem] To increase the specific resistance of a group 13 nitride single crystal substrate and inhibit warping and cracking. [Solution] This group 13 nitride single crystal substrate 2 comprises a group 13 nitride single crystal and has a first main surface 2a and a second main surface 2b. The group 13 nitride single crystal contains manganese and zinc as doping components.
C30B 19/02 - Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/208 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
94.
COMPOSITE SUBSTRATE, SURFACE ACOUSTIC WAVE ELEMENT, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE
The objective of the present invention is to provide a composite substrate having excellent durability. A composite substrate according to an embodiment of the present invention includes, in the stated order, a piezoelectric layer, a reflective layer including a low-impedance layer and a high-impedance layer containing silicon oxide, and a support substrate, wherein a density of the low-impedance layer is at most equal to 2.4 g/cm3, and an amorphous region is formed in the high-impedance layer.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
95.
TEMPORARY FIXED SUBSTRATE, METHOD OF MANUFACTURING TEMPORARY FIXED SUBSTRATE, AND TEMPORARY FIXING METHOD
Provided is a temporary fixed substrate that suppresses peeling defects and enables semiconductor packages to be obtained at a higher yield than in the related art. A temporarily fixed substrate, in which a plurality of electronic components are adhered on one main surface, and which is temporarily fixed by a resin mold, has a chamfered region at the end of each of the one main surface and the other main surface over the entire outer circumference, and the arithmetic mean roughness of the chamfered region on at least one main surface side is 0.1 μm to 10 μm and larger than the arithmetic mean roughness of the one main surface.
Provided is a sensor element with which it is possible to inhibit a decrease in detection accuracy due to long-term use of a gas sensor. The sensor element 101 detects a measurement target gas in a gas subject to measurement, the sensor element 101 including: an elongated plate-shaped base part 102 including oxygen-ion-conductive solid electrolyte layers 1, 2, 3, 4, 5, and 6; a gas-subject-to-measurement channel part 15 formed from one longitudinal end part of the base part 102; an inside main pump electrode 22 installed on the inner surface of the gas-subject-to-measurement channel part 15; a porous coating layer 25 covering at least the electrode end part of the inside main pump electrode 22 on the side nearer the one longitudinal end part of the base part 102; and a measurement electrode 44 installed at a position, on the inner surface of the gas-subject-to-measurement channel part 15, further from the one longitudinal end part of the base part 102 than the inside main pump electrode 22.
A ceramic wiring member (1) comprises a body portion (10) which is made of ceramic, and a conductive portion (20) which is disposed in contact with the body portion (10). The composition of the conductive portion (20) includes: a first metal component which, as a main component, is at least one of W and Mo; and a second metal component which is at least one selected from the group consisting of Ni, Co, and Fe, and comprises in total more than or equal to 0.1% and less than or equal to 10% with respect to the first metal component; and a ceramic component. The structure of the conductive portion (20) includes a conductive phase (31) which is composed of an alloy of the first metal component and the second metal component, and a glass phase (32) which is dispersed in the conductive phase (20) and is composed of the ceramic component constituting 3% to 20%, inclusive, in area ratio in a cross section of the conductive portion (20).
This ceramic wiring member (1) comprises: a body portion (10) made of ceramic and having tabular portions (11, 12); and an electrically conductive portion (20) disposed in contact with the tabular portions (11, 12). The composition of the electrically conductive portion (20) includes: an electrically conductive phase (31) that comprises at least one metal component of W or Mo and has a plurality of pores (31A) dispersed spaced apart from one another; and glass phases (32) that fill the plurality of pores (31A) and occupy 3-20% inclusive of the area in a cross-section in the thickness direction of the tabular portions (11, 12). In the cross-section in the thickness direction of the tabular portions (11, 12), the number of glass phases (32) that have an aspect ratio of 1.5 or less constitute 40% or more of the total number of glass phases (32).
Provided is an AlN single crystal substrate with a small off-angle distribution. This AlN single crystal substrate has a circular shape with a radius r, where a dislocation density Dc of a central section, a dislocation density Dm of a middle section, and a dislocation density Dp of an outer circumferential section satisfy the relationship Dm > Dp > Dc if the AlN single crystal substrate is divided into three areas: the central section which is an area up to 0.4 r in the radial direction from the center of the AlN single crystal substrate; the middle section which is an area up to 0.7 r in the radial direction from the center of the AlN single crystal substrate not including the central section; and the outer circumferential section which is the entire area of the AlN single crystal substrate not including the central section and the middle section.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
The present invention relates to a layered ceramic electronic component in which a first side surface electrode (51) connects a first external electrode layer (31) and a second internal electrode layer (42) to each other on a first side surface (S1) of a piezoelectric ceramic section (70) and is separated from a first internal electrode layer (41). A second side surface electrode (52) connects a second external electrode layer (32) and the first internal electrode layer (41) to each other on a second side surface (S2) and is separated from the second internal electrode layer (42). The ratio of a part in which all of a region of overlap between the first external electrode layer (31) and the first internal electrode layer (41), a region of overlap between the first internal electrode layer (41) and the second internal electrode layer (42), and a region of overlap between the second external electrode layer (32) and the second internal electrode layer (42) overlap in a two-dimensional layout is 75% or more with respect to the region in which the piezoelectric ceramic section (70) is arranged.
patents
