Provided is an air electrode/separator assembly including a hydroxide ion conductive separator including a hydroxide ion conductive solid electrolyte; and an air electrode layer having a thickness of 1,000 nm or smaller that is provided on one side of the hydroxide ion conductive separator and that includes a hydroxide ion conductive material, an electron conductive material, and an air electrode catalyst, provided that the hydroxide ion conductive material may be the same material as the hydroxide ion conductive solid electrolyte or the air electrode catalyst, and provided that the electron conductive material may be the same material as the air electrode catalyst.
A member for terahertz equipment includes: a substrate main body having a first principal surface and a second principal surface; and a reflection suppressing portion provided on at least one of the first principal surface or the second principal surface of the substrate main body. The reflection suppressing portion includes a plurality of protrusions which are arranged in a grating shape, and each have a tapered portion in a vertical cross section.
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A wafer placement table includes a ceramic plate that has at least a wafer placement part at an upper surface thereof, a cooling plate that is joined to a lower surface of the ceramic plate and that has a refrigerant flow path, gas common paths that are provided above the refrigerant flow path, gas introduction paths that extend from a lower surface of the cooling plate to a corresponding one of the gas common paths, and a plurality of gas distribution paths, that are provided for the gas common paths. The gas distribution path that is disposed at an outermost periphery of the ceramic plate is provided at a position that does not overlap the refrigerant flow path in plan view.
This wafer stage 10 is provided with: a ceramic plate 20 which is provided, on the upper surface thereof, with at least a wafer stage part 22; a cooling plate 30 which is bonded to the lower surface of the ceramic plate 20, and has a coolant flow path 32; gas common paths 51b, 52b, 53b which are arranged above the coolant flow path 32; gas introduction paths 51a, 52a, 53a which respectively reach the gas common paths 51b, 52b, 53b from the lower surface of the cooling plate 30; and a plurality of gas distribution paths 51e, 52e, 53e which are respectively provided onto the gas common paths 51b, 52b, 53b. The gas distribution path 53e, which is provided on the outermost periphery of the ceramic plate 20, is disposed in a position where the gas distribution path 53e does not overlap with the coolant flow path 32 when viewed in plan.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
5.
METHOD OF REGENERATING ACID GAS ADSORPTION DEVICE AND METHOD OF PRODUCING ACID GAS ADSORPTION DEVICE
A method of regenerating an acid gas adsorption device includes the steps of: causing an acid gas to be adsorbed to an acid gas adsorption material by supplying a gas including the acid gas to an acid gas adsorption device so that the gas is brought into contact with an acid gas adsorption layer; causing the acid gas to be desorbed from the acid gas adsorption material; removing the acid gas adsorption layer of the acid gas adsorption device, which has been subjected to the step of causing the acid gas to be adsorbed and the step of causing the acid gas to be desorbed, from a surface of a base material; and forming an acid gas adsorption layer including a porous carrier and an acid gas adsorption material on the surface of the base material from which the acid gas adsorption layer has been removed.
B01J 20/30 - Processes for preparing, regenerating or reactivating
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
6.
METHOD OF ADJUSTING HEAT UNIFORMITY ON WAFER MOUNT AND METHOD OF MANUFACTURING WAFER MOUNT
A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
7.
NEGATIVE ELECTRODE PLATE AND ZINC SECONDARY BATTERY
The present invention provides a negative electrode plate that enables a zinc secondary battery to have a prolonged cycle service life. This negative electrode plate is for use in a zinc secondary battery, and contains a polymer and a negative electrode active material that contains ZnO particles and Zn particles. This negative electrode plate has a normal reaction region and a reaction suppression region where the concentration of the polymer is higher than that in the normal reaction region; and if this negative electrode plate is divided into three equal parts in the thickness direction and the three equal parts are defined as an inner layer, a first surface layer and a second surface layer, the surface layers being positioned on the outer side of the inner layer, the inner layer belongs to the normal reaction region and the first surface layer belongs to the reaction suppression region.
A porous composite includes a porous base material and a porous collection layer provided on a collection surface of the base material. The collection layer includes particles deposited in pores of the collection surface. In a plan view of the collection surface, the proportion of the area of a covered region that is covered with the collection layer out of the collection surface is less than or equal to 70%, and the proportion of the area of a pore region out of a non-covered region that is not covered with the collection layer is less than or equal to 15%.
The present invention provides a method that makes it possible to adjust thermal uniformity in a placement surface after production of a wafer mounting base. Performed are: a) a step for preparing a wafer mounting base comprising a ceramic substrate that is provided with a placement surface for a wafer and that can be energized and heated and a cooling plate that is joined to the ceramic substrate and that enables cooling via a coolant supplied to a flow path, wherein the cooling plate is constituted by a base part that is provided with a flow path and a cover part that is attachable to and removable from the base part, and that enables opening of the flow path by being removed from the base part; b) a step for attaching the cover part to the base part and measuring a temperature distribution while performing energizing/heating and cooling; c) a step for removing the cover part and locally adjusting flow path shape when the temperature distribution does not satisfy a prescribed criterion; and d) a step for re-measuring the temperature distribution of the wafer mounting base which has an adjusted flow path shape, while performing energization/heating and cooling after attaching the cover part to the base part. Steps c) and d) are repeated until the re-measured temperature distribution satisfies the prescribed criterion.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
Provided is an electrostatic chuck assembly the service life of which can be lengthened several fold during use in a vacuum chamber. This electrostatic chuck assembly comprises a disc-shaped ceramic plate with built-in electrodes serving as an electrostatic chuck, a disc-shaped cooling plate which supports the bottom surface of the ceramic plate with built-in electrodes and which has an annular-shaped or arc-shaped internal space, an annular-shaped or arc-shaped internal fastening member housed in the internal space rotatably about the center axis of the cooling plate, internal thread portions the number of which is a multiple of n (where n represents an integer equal to or greater than 2) and which are provided to the internal fastening member so as to be spaced apart from each other, and n punch holes which are provided to the bottom portion of the cooling plate so as to expose one set of n internal thread portions and which are for bolts to be inserted for fastening the chamber. The internal thread portions are arranged such that another set of n internal thread portions are exposed in the punch holes when the internal fastening member is rotated by a predetermined angle or an angle that is a multiple thereof.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
15.
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
This substrate for a semiconductor device comprises a ceramic substrate and a copper sheet joined to at least one surface of the ceramic substrate. The ceramic substrate has a Cu region having a Cu presence depth of 11.0 to 20.0 μm, the Cu presence depth being measured from the joining interface with the copper sheet and having a cumulative Cu mass concentration which reaches 90%.
The present invention provides a technology with which it is possible to accurately propose favorable trial production conditions for materials even if the parameter space to be searched is wide with respect to the computational resources used. This trial production condition proposal system 1 is a system for proposing material trial production conditions to material developers, and is provided with a regression model construction processing unit 112 and a trial production condition proposal processing unit 113. The regression model construction processing unit 112 executes a regression model construction process on property measurement data representing actual measurement results of material properties. The trial production condition proposal processing unit 113 performs an optimization process to search for optimal trial production conditions for a material using the constructed regression model, and executes a trial production condition proposal process on the basis of the result of the optimization process.
Trial manufacturing condition proposing system includes a characteristic evaluation data preprocessing unit, a feature value selection processing unit, a regression model creation processing unit, and a trial manufacturing condition proposing processing unit. The characteristic evaluation data preprocessing unit applies preprocessing to the characteristic evaluation data indicating an evaluation result of characteristics of the material. The feature value selection processing unit executes feature value selection processing on the characteristic evaluation data to which the preprocessing has been applied. The regression model creation processing unit executes regression model creation processing on the characteristic evaluation data, to which the preprocessing has been applied, based on the result of the feature value selection processing. The trial manufacturing condition proposing processing unit executes trial manufacturing condition proposing processing based on a regression model created by the regression model creation processing unit with respect to the characteristic evaluation data to which the preprocessing has been applied.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
G06F 30/17 - Mechanical parametric or variational design
This wafer placement table 10 comprises a ceramic plate 20 that has a wafer placement surface 22a and has an electrode embedded therein, a cooling plate 30 that has a coolant flow path 32 and is made of a metal-ceramic composite material, and a joining layer 40 that joins both the plates 20 and 30. The length from the wafer placement surface 22a to at least one of an upper bottom or a lower bottom of the coolant flow path 32 is not constant across the entirety of the coolant flow path 32 and has locations where the length changes. The cooling plate 30 is a structure obtained by metal-joining of a plurality of plate sections that include a first thin plate section 81 and a second thin plate section 82 that are joined to each other, wherein the first thin plate section 81 has a first flow path section that is a penetrating groove provided so as to have the same shape as the coolant flow path 32 in a plan view, and the second thin plate section 82 has a second flow path section that is a bottomed groove at least a portion of which is provided in a position facing the first flow path section.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
19.
TRIAL PRODUCTION CONDITION PROPOSAL SYSTEM AND TRIAL PRODUCTION CONDITION PROPOSAL METHOD
Provided is technology that enables accurate proposal of a trial production condition for favorable materials even if there is little learning data to be used in the construction of a machine learning model or even if there is a deviation in the learning data distribution. A trial production condition proposal system 1 proposes a material trial production condition to a material developer, the system comprising: a regression model construction processing unit 112; and a trial production condition proposal processing unit 113. The regression model construction processing unit 112 executes a regression model construction process for measured characteristics data representing the results of measuring characteristics of a material. The trial production condition proposal processing unit 113 uses the constructed regression model to search for the optimal trial production condition for the material, and executes a trial production condition process on the basis of the search results. The regression model construction process includes: a process for calculating weight criteria, which are criteria for weighting the measured characteristics data; and a process for weighting the measured characteristics data on the basis of the calculated weight criteria.
This ceramic porous body is used in a gas pipe in which a ceramic porous body is filled in an outer pipe. The ceramic porous body has a porosity of 20% to 60% inclusive.
F01N 13/14 - Exhaust or silencing apparatus characterised by constructional features having thermal insulation
F16L 9/153 - Compound tubes, i.e. made of materials not wholly covered by any one of the preceding groups comprising only layers of metal and concrete with or without reinforcement
There is provided an electrostatic chuck assembly including: an electrode-embedded ceramic plate; a cooling plate that supports a bottom surface of the ceramic plate and has an internal space of an annular or arcuate shape; an internal fixation member of an annular or arcuate shape accommodated in the internal space so as to be rotatable about a central axis of the cooling plate; female threads in a multiple of n, which is an integer of 2 or more, spaced apart from each other in the internal fixation member; and n insertion holes for insertion of bolts for being fixed to a chamber, the insertion holes each being provided at the bottom of the cooling plate such that one set of n female threads is exposed. Each of the female threads is disposed such that another set of n female threads is exposed in the insertion holes when rotated.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A heat treatment system may include a heat treatment furnace; a supply device; a stack device configured to stack saggars in an up-down direction; a first conveyor configured to convey the saggars to the heat treatment furnace; an unstack device configured to unstack the stacked saggars; a recovery device; and a second conveyor configured to convey the saggars from the heat treatment furnace to the unstack device. At least one of the recovery device and the supply device may include at least a first conveyor mechanism and a second conveyor mechanism. The recovery device may further include a first recovery unit disposed on the first conveying path and a second recovery unit disposed on the second conveying path, or the supply device may further include a first supply unit disposed on the first conveying path and a second supply unit disposed on the second conveying path.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-chamber type; Combinations of furnaces
B65G 61/00 - Use of pick-up or transfer devices or of manipulators for stacking or de-stacking articles not otherwise provided for
F27D 5/00 - Supports, screens, or the like for the charge within the furnace
A heat treatment system may include a heat treatment furnace configured to heat treat a material in a saggar; a conveyor configured to convey the saggar from an exit to an entrance of the heat treatment furnace; a recovery device configured to recover the material heat-treated; a supply device configured to supply a non-heat-treated material to the saggar; and a hood covering the conveying path. The conveying path may include a first conveying path disposed on at least a part of the conveying path between the recovery device and the supply device; and a second conveying path disposed on other part of the conveying path than the part where the first conveying path is disposed. The hood may be disposed over the second conveying path and may not be disposed over the first conveying path.
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
F27B 9/40 - Arrangements of controlling or monitoring devices
25.
METHOD OF MANUFACTURING BONDED SUBSTRATE, METHOD OF MANUFACTURING CIRCUIT SUBSTRATE, AND CIRCUIT SUBSTRATE
A method of manufacturing a bonded substrate includes: preparing one or plurality of products to be bonded, each including a brazing material layer and a copper plate laminated on both main surfaces of a ceramic substrate, laminating, one or a plurality of products bonded and a pair of clamping members that clamp them while providing a mold releasing layer between each thereof, heating the one or the plurality of products while pressing the one or the plurality of products in the pair of clamping members to obtain the one or the plurality of bonded substrates in which the ceramic substrate and the copper plate are bonded with a bonding layer, and removing the mold releasing layer from the bonded substrate by dissolving a portion in contact with the mold releasing layer of the copper plate included in the bonded substrate by wet etching.
A wafer placement table includes a ceramic plate having a wafer placement surface and an electrode, a cooling plate made of a metal-ceramic composite and having a cooling medium passage, and a joining layer configured to join the plates. A distance from the wafer placement surface to at least one of upper base or lower base of the cooling medium passage is not constant. The cooling plate has a plurality of plate portions including a first plate portion and a second plate portion, and has a structure in which the plurality of plate portions metal-joined to each other. The first plate portion has a first passage portion which is a through groove having the same shape as the cooling medium passage. The second plate portion has a second passage portion which is a bottomed groove disposed in at least part of a region facing the first passage portion.
A mixed gas separation method includes a step of supplying a mixed gas to the separation membrane and causing a gas with high permeability in the mixed gas to permeate through the separation membrane. In the step, when ΔP is a difference between a gas pressure on the primary side of the separation membrane, i.e., a feed pressure, and a gas pressure on the secondary side of the separation membrane, i.e., a permeate pressure, and A is a Joule-Thomson coefficient, a difference ΔT between a gas temperature on the primary side of the separation membrane, i.e., a feed temperature, and a gas temperature on the secondary side of the separation membrane, i.e., a permeate temperature, is made less than 90% of A·ΔP by setting the Nu number in the mixed gas to be greater than or equal to 2 and less than or equal to 10.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A heater element includes: a honeycomb structure including an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path; a pair of electrode layers provided on the outer peripheral wall and the partition walls on the first end face and the second end face; and terminals capable of electrically connecting the electrode layers to a conducting wire. At least a part of each of the electrode layers has an extending portion extending outwardly from an outer edge of each of the first end face and the second end face. Each of the terminals is connected to the extending portion and disposed to face a side surface of the honeycomb structure.
H05B 3/26 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
29.
GAS SENSOR, AND CONCENTRATION MEASURING METHOD EMPLOYING GAS SENSOR
The present invention makes it possible to accurately measure a low-concentration gas to be measured. Provided are a gas sensor 100 and a method for controlling the same, the gas sensor 100 comprising a sensor element 101 and a control device. The sensor element 101 includes: a substrate part 102; a measured gas distribution cavity 15; an oxygen pump cell 21 including an intra-cavity oxygen pump electrode 22 and an extra-cavity oxygen pump electrode 23; a decomposition pump cell 50 including an intra-cavity decomposition pump electrode 51 and an extra-cavity decomposition pump electrode 23; an intra-cavity detection electrode 44; and a reference electrode 42 provided to be in contact with a reference gas. The control device includes: a pump control unit that operates the decomposition pump cell 50 so that the voltage between the intra-cavity detection electrode 44 and the reference electrode 42 is a predetermined value, to decompose at least a portion of a gas to be measured in gases being measured, and to pump out oxygen generated through the decomposition; and a concentration calculation unit that calculates the concentration of the gas to be measured in the gases being measured on the basis of the value of the voltage between the intra-cavity decomposition pump electrode 51 and the reference electrode 42.
There is provided an EUV transmissive membrane including: a main layer composed of metallic beryllium that has a first surface and a second surface; and a pair of surface layers provided on the first surface and the second surface of the main layer, each containing at least one fluoride selected from beryllium fluoride, beryllium fluoride nitride, beryllium fluoride oxide, and beryllium fluoride nitride oxide.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
33.
EUV TRANSMISSIVE MEMBRANE, METHOD OF USE THEREOF, AND EXPOSURE METHOD
Provided is an EUV transmissive membrane including a main layer having an EUV transmittance of 85% or more at a wavelength of 13.5 nm, wherein the main layer is composed of a monolayer or a composite layer of two or more layers, and a protective layer that covers at least one side of the main layer, wherein the protective layer includes at least one selected from the group consisting of amorphous carbon, Cu, Al, and an organic resist as a main component.
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
There is provided a nickel-zinc secondary battery including, in a sealed container, a positive electrode, a negative electrode, a separator provided between the positive electrode and the negative electrode, and an electrolytic solution. An oxygen absorber is provided in a position where oxygen generated in the positive electrode in the sealed container is absorbable.
H01M 10/52 - Removing gases inside the secondary cell, e.g. by absorption
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
Provided is an EUV transmissive film from which particles are unlikely to be generated even when the film is damaged by any chance. This EUV transmissive film is provided with: a main layer that is formed of metallic beryllium and that has a first face and a second face; and a pair of surface layers that are provided on the first face and the second face of the main layer, and that contain at least one fluoride selected from beryllium fluoride, nitrided beryllium fluoride, oxidized beryllium fluoride, and oxidized-nitrided beryllium fluoride.
Provided is an EUV-transmissive film in which EUV absorption by a protective layer causing a decrease in EUV transmittance can be suppressed, thereby enabling exhibition of high EUV transmittance at the time of exposure. The EUV-transmissive film comprises: a main layer (12) formed of a single layer or a composite layer including two or more layers and having an EUV transmittance of 85% or higher at a wavelength of 13.5 nm; and a protective layer (14) covering at least one side of the main layer and containing, as a major component, at least one selected from the group consisting of amorphous carbon, Cu, Al, and organic resist.
2222222 supplied from the variable capacity tank; a vacuum pump which is connected to the etching chamber and is capable of subjecting the etching chamber and the variable capacity tank to vacuum drawing; a first valve provided between the starting material vessel and the variable capacity tank; a second valve provided between the variable capacity tank and the etching chamber; and a third valve provided between the etching chamber and the vacuum pump.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
A heat treatment system may include a heat treatment furnace configured to heat treat a material in a saggar; a conveyor configured to convey the saggar from an exit to an entrance of the heat treatment furnace; a recovery apparatus configured to recover the material heat-treated from the saggar; and a supply device configured to supply a non-heat treated material to the saggar. The conveyor may include a conveyor mechanism and a drive unit configured to drive the conveyor mechanism. The recovery apparatus may comprise a recovery unit disposed at a position where the conveyor mechanism is not disposed and configured to recover the material in the saggar; a transport device configured to transport the saggar between a placement position on the conveyor mechanism and a recovery position above the recovery unit; and an inversion mechanism configured to invert the saggar at the recovery position.
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
F27B 9/39 - Arrangement of devices for discharging
A heat treatment system may include a heat treatment furnace configured to heat treat a material in a saggar, the saggar including a saggar body and a lid; a lid removing device configured to remove the lid from the saggar; a body conveyor configured to convey the saggar body; a lid conveyor configured to convey the lid; a recovery device configured to recover the material from the saggar body; a supply device configured to supply a non-heat-treated material to the saggar body; and a lid attaching device configured to attach the lid to the saggar body. A conveying time for the lid to be conveyed from an entrance to an exit of a conveying path of the lid conveyor may be shorter than a conveying time for the saggar body to be conveyed from an entrance to an exit of a conveying path of the body conveyor.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-chamber type; Combinations of furnaces
F27D 5/00 - Supports, screens, or the like for the charge within the furnace
The uniformity of the temperatures in a module battery for a high-temperature operating secondary battery is ensured. A battery cell that is a high-temperature operating secondary battery includes: a cylindrical main body including a positive part and a negative part; a sheath annularly sheathing the main body, the sheath including at least a cylindrical metal part and an insulating part annularly sheathing an external side surface of the metal part; and a coil of a conductive wire rod wound around an external side surface of the insulating part.
H01M 10/617 - Types of temperature control for achieving uniformity or desired distribution of temperature
H01M 10/6563 - Gases with forced flow, e.g. by blowers
H01M 10/657 - Means for temperature control structurally associated with the cells by electric or electromagnetic means
H01M 50/213 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for cells having curved cross-section, e.g. round or elliptic
41.
CERAMIC SUBSTRATE, AND SEMICONDUCTOR DEVICE SUBSTRATE PROVIDED WITH SAME
23222 are located adjacent to each other is defined as A, when the concentration of Si, which is the first component of the glassy substance, as expressed in terms of an oxide is defined as B, and when the total mass concentration of Ca, Sr, and Ba, which are each the second component of the glassy substance, as expressed in terms of an oxide is defined as C, the value of A/(B×C) is 7.1×10-4 or less.
A dielectric drying method for ceramic formed bodies includes drying a plurality of ceramic formed bodies placed side by side in an arrangement direction Y perpendicular to a conveying direction X on an upper surface of a drying table by conveying the ceramic formed bodies between electrodes of an upper electrode and a lower electrode, and applying a high frequency between the electrodes. The drying table is conveyed by a conveyor having at least one conveyor belt for supporting a portion of the drying table in the arrangement direction Y. At least one electric field adjusting member is arranged below the drying table that is not supported by the conveyor belt.
F26B 3/347 - Electromagnetic heating, e.g. induction heating or heating using microwave energy
F26B 15/18 - Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound the lines being all horizontal or slightly inclined the objects or batches of materials being carried by endless belts
Provided is a storage battery set and a storage battery system that are highly redundant against failures in battery cells. A module battery including at least one string in which multiple battery cells are connected in series, the multiple battery cells being high-temperature operating secondary batteries, the multiple battery cells included in the at least one string being divided into a plurality of cell groups, the module battery includes: a main path through which the plurality of cell groups are connected in series; and a bypass path allowing each of the plurality of cell groups to be individually bypassed in the at least one string, wherein when at least one of the multiple battery cells fails, an energizing path is diverted from the main path to the bypass path at a corresponding one of the plurality of cell groups to which the failed battery cell belongs.
A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is an acid gas collection method that is capable of improving the amount of acid gas desorbed from an acid gas adsorbent. An acid gas collection method according to an embodiment of the present invention comprises an adsorption step and a desorption step. In the adsorption step, a gas to be processed which contains an acid gas is supplied to an acid gas adsorption device that includes an acid gas adsorbent, and the acid gas is adsorbed by the acid gas adsorbent. In the desorption step, the acid gas adsorption device is heated such that the acid gas is desorbed from the acid gas adsorbent. The desorption step includes a first desorption step and a second desorption step at least after the first desorption step. In the first desorption step, a first desorption gas is supplied to the acid gas adsorption device, and acid gas that is desorbed from the acid gas adsorbent is collected along with the first desorption gas. In the second desorption step, a second desorption gas having a lower humidity than the first desorption gas is supplied to the acid gas adsorption device, and acid gas that is desorbed from the acid gas adsorbent is collected along with the second desorption gas.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
Provided is an acidic gas adsorption device that can stably desorb acidic gas from an acidic gas adsorbent. An acidic gas adsorption device according to an embodiment of the present invention comprises first adsorption parts and second adsorption parts. The second adsorption parts are disposed at intervals on the downstream side in a passage direction of the gas to be treated with respect to the first adsorption parts. The first adsorption parts include a first flow path, and the second adsorption parts include a second flow path. A first desorbed gas flow path in communication with the first flow path and the second flow path is formed between the first adsorption parts and the second adsorption parts in the passage direction of the gas to be treated.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
47.
METHOD FOR PRODUCING LIQUID FUEL AND LIQUID FUEL SYNTHESIS SYSTEM
The main purpose of the present invention is to suppress reductions in the reaction efficiency in the vicinity of the gas flow inlet of a reactor for a conversion reaction to a liquid fuel of a starting gas that contains carbon oxide and hydrogen. A method according to an embodiment of the present invention for producing liquid fuel comprises: introducing, into a catalyst-containing reactor, a starting gas that contains at least carbon oxide and hydrogen; and producing, in the presence of the catalyst, a liquid fuel from the starting gas by a conversion reaction. The starting gas additionally contains oxygen, and the ratio in the carbon oxide of the carbon monoxide concentration to the carbon dioxide concentration is not greater than 0.9.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
C07C 29/151 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
In the present invention, an upper base material 20 of a wafer placement table 10 is provided with a ceramic base material 21 that has an electrode 22 embedded therein, the upper base material 20 having a wafer placement surface 21a on the upper surface of the ceramic base material 21. A lower base material 30 is disposed on the lower-surface side of the upper base material, the lower base material 30 being provided with refrigerant flow paths 35. Through-holes 36 penetrate through the lower base material 30 in the up-down direction. Protrusions 38 are provided in the form of dots on the entirety of the upper surface of the lower base material 30, the protrusions 38 being in contact with the lower surface of the upper base material 20. A heat dissipation sheet 40 has protrusion insertion holes 44 into which the protrusions 38 are inserted, the heat dissipation sheet 40 being disposed between the upper base material 20 and the lower base material 30 in a compressed state. Threaded holes 24 are provided in the lower surface of the upper base material 20 at positions that face the through-holes 36, and screw members 50 are inserted into the through-holes 36 from the lower surface of the lower base material 30 and threaded into the threaded holes 24.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An upper base material 20 of this wafer placement table 10 comprises a ceramic base material 21 that has an electrode 22 built therein, and has a wafer placement surface 21a on the upper surface of the ceramic base material 21. A lower base material 30 is disposed on the lower surface side of the upper base material 20 and comprises a coolant flow path 35. Through-holes 36 penetrate the lower base material 30 in the up-down direction. Protrusions 38 are provided in a dotted shape over the entire upper surface of the lower base material 30 and abut the lower surface of the upper base material 20. A heat dissipation sheet 40 has protrusion insertion holes 44 into which the protrusions 38 are inserted, and is disposed in a compressed state between the upper base material 20 and the lower base material 30. Screw holes 24 are provided in positions facing the through-holes 36 on the lower surface of the upper base material 20, and screw members 50 are inserted into the through-holes 36 from the lower surface of the lower base material 30 and are screwed into the screw holes 24. A heat conductive paste 60 is interposed between the side surfaces of the protrusions 38 and the inner circumferential surfaces of the protrusion insertion holes 44 of the heat dissipation sheet 40.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is an acid gas collection method with which it is possible to reduce oxidation degradation and volatilization-caused abrasion of an acid gas adsorbing material. The acid gas collection method according to an embodiment of the present invention sequentially includes an absorbing step, a desorbing step, and a cooling step. In the absorbing step, a gas to be processed containing an acid gas is supplied to an acid gas absorbing device including an acid gas adsorbing material, and the acid gas is absorbed by the acid gas adsorbing material. In the desorbing step, the acid gas absorbing device is heated, and the acid gas is desorbed from the acid gas adsorbing material. In the cooling step, the acid gas absorbing device is cooled by a cooling medium with a temperature less than ambient temperature.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/22 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
Provided is an acidic gas recovery system with which it is possible to facilitate increase in the amount of acidic gas adsorption and also to suppress deterioration of an acidic gas adsorbing material. An acidic gas recovery system according to an embodiment of the present invention is provided with: a plurality of acidic gas adsorption devices that include an acidic gas adsorbing material; and a fluid supply line. Through the fluid supply line, a fluid is distributed and supplied to each of the plurality of acidic gas absorption devices. The fluid supply line is provided with a branch part and a plurality of flow divisional parts. Each of the plurality of flow dividing parts connects between the branch part and the corresponding acidic gas adsorption device. The plurality of flow dividing parts each have a resistor disposed therein.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
An acidic-gas adsorption device is provided with which the efficiency of acidic-gas adsorption can be improved. The acidic-gas adsorption device according to an embodiment of the present invention comprises: an acidic-gas adsorption part through which a fluid can pass in a given direction; and one case. The acidic-gas adsorption part includes acidic-gas adsorbents capable of adsorbing acidic gases. The acidic-gas adsorption part comprises a first adsorption part and a second adsorption part disposed downstream from the first adsorption part along the fluid-passing direction. The first adsorption part includes a first acidic-gas adsorbent, which is relatively low in the ability to adsorb acidic gases but is high in acidic-gas adsorption capacity. The second adsorption part includes a second acidic-gas adsorbent, which is relatively high in the ability to adsorb acidic gases but is low in acidic-gas adsorption capacity. The one case accommodates both the first adsorption part and the second adsorption part.
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
The present invention provides an acidic-gas adsorption device that allows partial replacement of a deteriorated acidic-gas adsorption part to enable a reduction in running costs. An acidic-gas adsorption device according to an embodiment of the present invention includes: an acidic-gas adsorption part through which a fluid can pass in a predetermined direction; and one case. The acidic-gas adsorption part includes an acidic-gas adsorption member capable of adsorbing acidic gas. The acidic-gas adsorption part is divided into at least a first adsorption part including an upstream end surface in a fluid passage direction and a second adsorption part disposed on the downstream side of the first adsorption part in the fluid passage direction. The one case collectively houses the first adsorption part and the second adsorption part. The first adsorption part and/or the second adsorption part is divided into multiple parts in a direction intersecting the fluid passage direction.
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
55.
LIQUID FUEL PRODUCTION SYSTEM AND LIQUID FUEL PRODUCTION METHOD
22 supply source and/or cooling energy in a liquid fuel production system. According to an embodiment of the present invention, provided is a liquid fuel production system comprising: a gas adsorption and desorption unit that adsorbs a prescribed gas A and desorbs the prescribed gas A when heated; a heat-conducting medium supply unit that supplies, to the gas adsorption and desorption unit, a heat-conducting medium for heating the gas adsorption and desorption unit; a liquid fuel synthesis unit that has a first gas flow path housing a catalyst which progresses a conversion reaction from a raw material gas containing at least carbon dioxide and hydrogen into a liquid fuel, and a second gas flow path through which a temperature-adjusting gas for adjusting the temperature of the first gas flow path flows to cause a first flow-out gas to flow out of the first gas flow path and a second flow-out gas to flow out of the second gas flow path; and a heat exchanger that exchanges heat between the second flow-out gas and the heat-conducting medium to heat the heat-conducting medium. The second flow-out gas contains a condensable gas.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
22 supply source and/or a cooling energy in a liquid fuel production system. According to an embodiment of the present invention, a liquid fuel production system is provided, which comprises: a gas adsorption/desorption unit which adsorbs a specific gas A and desorbs the gas A by heating; a heat transmitting medium supply unit which supplies a heat transmitting medium for heating the gas adsorption/desorption unit to the gas adsorption/desorption unit; a liquid fuel synthesis unit which has a first gas flow path and a second gas flow path, in which the first gas flow path accommodates a catalyst for facilitating a conversion reaction from a raw material gas containing at least carbon dioxide and hydrogen to a liquid fuel, the second gas flow path allows a temperature-controlling gas for controlling the temperature of the first gas flow path to pass therethrough, a first effluent gas flows out through the first gas flow path, and a second effluent gas flows out through the second gas flow path; and a heat exchanger which performs the heat exchange between the first effluent gas and the heat transmitting medium to heat the heat transmitting medium. In the liquid fuel production system, the first effluent gas comprises a condensable gas.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
B01D 53/04 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
The main purpose of the present invention is to lessen the temperature difference between the gas temperature at the inlet and the gas temperature at the outlet of a reactor in a reaction that converts a raw material gas containing carbon oxides and hydrogen into a liquid fuel. The method for producing a liquid fuel according to an embodiment of the present invention includes allowing a raw material gas containing at least carbon oxides and hydrogen to flow into a reactor housing a catalyst and generating a liquid fuel from the raw material gas by a conversion reaction in the presence of the catalyst. The raw material gas also contains an inert gas, and the ratio of the carbon monoxide concentration to the carbon dioxide concentration in the carbon oxides is 0.9 or less.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
C07C 29/151 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases
The main purpose of the present invention is to prevent the deterioration in reaction yield in a conversion reaction from a raw material gas comprising hydrogen and carbon oxide to a liquid fuel. A liquid fuel production system according to an embodiment of the present invention is provided with: a liquid fuel synthesis unit which allows a conversion reaction from a raw material gas containing at least hydrogen and carbon oxide to a liquid fuel to proceed; a raw material gas supply unit which supplies the raw material gas into the liquid fuel synthesis unit; and a raw material gas circulation unit which re-supplies a remaining portion of the raw material gas, which contains an unreacted portion of the hydrogen, an unreacted portion of the carbon oxide and an acidic by-product of the conversion reaction, from the liquid fuel synthesis unit into the raw material gas supply unit. In the liquid fuel production system, the raw material gas supply unit includes: a mixing unit which mixes an amine compound with the remaining portion of the raw material gas in the presence of water vapor; and a water removal unit which removes a neutralization product between the amine compound and the acidic by-product together with condensed water of the water vapor.
C10G 2/00 - Production of liquid hydrocarbon mixtures of undefined composition from oxides of carbon
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×1015 Ω/□ or higher.
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
H10N 30/086 - Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
Provided is an SiC substrate with which breaking and cracking during substrate processing, such as grinding, polishing, cutting, and the like, can be reduced. This SiC substrate includes a biaxially oriented SiC layer. The SiC substrate and the biaxially oriented SiC layer have an off angle. In an X-ray topography (XRT) image of this SiC substrate obtained by performing XRT measurement of a 4 mm square region in the biaxially oriented SiC layer, the ratio of the number of basal plane dislocations (BPD) at which the absolute value of the acute angle side of an angle formed by a BPD progression direction and the [11-20] direction is 15° or less to the total number of the basal plane dislocations is 60% or greater. The BPD progression direction is defined as a direction, in the XRT image, of a line segment that connects an end point of a linearly observed BPD and a point separated from the end point by 150 μm along the linear BPD.
METHOD FOR INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD FOR PRODUCING GROUP-III ELEMENT NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Provided is a group-III element nitride substrate that is capable of having an improved yield. A method for inspecting a group-III element nitride substrate according to an embodiment of the present invention comprises: preparing a group-III element nitride substrate that is doped with an element other than group-III elements; irradiating the group-III element nitride substrate with excitation energy; and measuring the full width at half maximum of the band edge emission in an emission spectrum obtained by the irradiation.
This refractory material is bonded to a SiC-containing aggregate by a bonding part composed of Si, Al, O, and N. According to the refractory material, the proportion of SiC in the refractory material is 60-90 mass%, and the proportions of respective elements constituting the bonding part are 0.1-1.1 mass% for Si, 4-21 mass% for Al, 4.8-19 mass% for O, and 7.2-13.1 mass% for N.
C04B 35/567 - Refractories from grain sized mixtures
C04B 35/599 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon oxynitrides based on silicon aluminium oxynitrides (SIALONS)
A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
A member for semiconductor manufacturing apparatus includes a ceramic plate incorporating an electrode; a ceramic plate through hole extending through the ceramic plate in an up-and-down direction; a base plate having electrical conductivity and located adjacent to a lower surface of the ceramic plate; a base plate through hole extending through the base plate in the up-and-down direction; an insulating sleeve inserted into the base plate through hole and having an outer circumferential surface adhered to an inner circumferential surface of the base plate through hole with an adhesive layer therebetween; and a sleeve through hole extending through the insulating sleeve in the up-and-down direction and communicating with the ceramic plate through hole, wherein the insulating sleeve has at least one ring-shaped or spiral outer circumferential groove on the outer circumferential surface of the insulating sleeve except for an upper end portion of the insulating sleeve.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer placement table (10) includes: a ceramic base material (20) having a wafer mounting surface (20a); a heater electrode (30) embedded in the ceramic base material (20); a planar upper jumper layer (40) provided in a layer different from the heater electrode (30); an internal via (42) connecting the upper jumper layer (40) and one end of the heater electrode (30); and a power supply via (46) connected to the upper jumper layer (40). A center-to-center distance between the internal via (42) and the power supply via (46) in the upper jumper layer (40) is 50 mm or more.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer placement table 10 is an example of a member for a semiconductor manufacturing device and comprises a ceramic plate 20, a ceramic plate through-hole 24, a base plate 30, a base plate through-hole 34, an insulating sleeve 50, and a sleeve through-hole 54. The sleeve through-hole 54 vertically penetrates the insulating sleeve 50 and communicates with the ceramic plate through-hole 24. The insulating sleeve 50 is inserted into the base plate through-hole 34 and the outer circumferential surface 50c of the insulating sleeve 50 is adhered to the inner circumferential surface of the base plate through-hole 34 via an adhesive layer 60. The insulating sleeve 50 has at least one annular outer circumferential groove 52 in a portion which is of the outer circumferential surface 50c of the insulating sleeve 50 and is other than a top end 56 of the insulating sleeve 50.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
67.
GAS SENSOR AND METHOD OF IDENTIFYING DEVIATION OF REFERENCE POTENTIAL OF THE SAME
A gas sensor includes a sensor element and a control device, and detects a specific gas concentration that is a concentration of a specific gas in a measurement-object gas. The sensor element includes an element body including an oxygen-ion-conductive solid electrolyte layer and provided with a measurement-object gas flow portion therein, the measurement-object gas flow portion introducing the measurement-object gas and causing the measurement-object gas to flow therethrough; a measurement electrode disposed in a measurement chamber of the measurement-object gas flow portion; and a reference electrode disposed inside the element body to come into contact with a reference gas that serves as a reference for detection of the specific gas concentration. The control device measures a voltage across the ground and the reference electrode, and identifies a deviation of the reference potential that is the electrical potential of the reference electrode based on the measured voltage.
This sensor element is provided with an oxygen concentration adjustment pump cell including an inside pump electrode, which is provided on a base portion configured from a solid electrolyte having oxygen ion conductivity, and which is a porous cermet electrode of a noble metal and the solid electrolyte, the inside pump electrode being provided facing a first internal cavity into which a gas being measured is introduced from the outside under a predetermined diffusion resistance, and an extra-cavity pump electrode provided outside the first internal cavity, wherein: a partial electrode portion of the inside pump electrode opposing the extra-cavity pump electrode across a portion of the base portion has a nano-level mixed region of the noble metal and the solid electrolyte; an abundance ratio of the nano-level mixed region in a central portion of the partial electrode portion is 50% to 90%; and the abundance ratio of the nano-level mixed region in a distal end portion and a rear end portion is at least 3% less than the abundance ratio of the nano-level mixed region in the central portion.
Provided is a negative electrode plate that suppresses in-plane diffusion of zinc acid ions and makes it possible to delay a shape change. The negative electrode plate comprises: a negative electrode current collector; a partition wall that is provided to at least one surface of the negative electrode current collector and defines a plurality of segments that are separated from one another; and a negative electrode active material that is filled into each of the segments, the negative electrode active material containing at least one selected from the group consisting of zinc, zinc oxide, zinc alloys, and zinc compounds.
H01M 50/446 - Composite material consisting of a mixture of organic and inorganic materials
H01M 50/474 - Spacing elements inside cells other than separators, membranes or diaphragms; Manufacturing processes thereof characterised by their position inside the cells
H01M 50/477 - Spacing elements inside cells other than separators, membranes or diaphragms; Manufacturing processes thereof characterised by their shape
This sensor element comprises: an oxygen-concentration-adjusting pump cell including an inner-side pump electrode that is a porous cermet electrode composed of a rare metal and a solid electrolyte, the inner-side pump electrode being provided to a base part composed of a solid electrolyte and facing a first internal void into which a gas being measured is introduced from the outside, the oxygen-concentration-adjusting pump cell also including an out-of-void pump electrode that is provided outside of the first internal void; and a measurement pump cell including an NOx detection electrode that is provided to a measurement internal void communicating with the first internal void, and an out-of-void pump electrode. A measurement electrode and a parallel electrode that faces the out-of-void pump electrode of the inner-side pump electrode across a portion of the base part have a nano-level mixture region of the rare metal and the solid electrolyte. A first presence ratio that is the ratio of the mixture region present in the parallel electrode is 40-60%. The proportion of a second presence ratio that is the ratio of the mixture region present in the measurement electrode to the first presence ratio is 0.03-0.1.
A separation membrane module (1) comprises: a housing (20) having a cylindrical shape; a reactor (10) having a columnar shape, housed in the housing (20), and extending in the longitudinal direction; and a first flange (30) having an annular shape and surrounding a first end part (10a) of the reactor (10). In the longitudinal direction, a first end surface (F2) of the reactor (10) is located outside an end surface (K1) of the first flange (30).
This separation membrane module comprises a reactor (10) having a columnar shape, a first flange (30) having an annular shape and surrounding a first end part (10a) of the reactor (10), and a first intermediate part (50) disposed between a first end surface (F2) of the reactor 10 and a housing (20).
A separation membrane module (1) comprises a cylindrical housing (20), a monolith reactor (10) housed in the housing (20), and a first flow straightening unit (50) housed in the housing (20). The housing (20) has an inner circumferential surface (G1), and a sweeping gas supply port (T4) formed on the inner circumferential surface (G1) and through which a sweeping gas flows. The reactor (10) has an outer circumferential surface (F1), and a first slit (17) formed on the outer circumferential surface (F1) and through which the sweeping gas flows. The first flow straightening unit (50) has a first flow straightening surface (H1) that rectifies the turbulence of the sweeping gas between the sweeping gas supply port (T4) and the first slit (17).
C10L 1/02 - Liquid carbonaceous fuels essentially based on components consisting of carbon, hydrogen, and oxygen only
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
A member for a semiconductor manufacturing apparatus, includes: a ceramic plate that has a ceramic plate through hole; an electroconductive base plate that has a base plate through hole and that is disposed on a lower surface side of the ceramic plate; an insulating sleeve which is inserted into the base plate through hole and of which an outer peripheral surface is adhered to an inner peripheral surface of the base plate through hole via an adhesion layer; and a sleeve through hole that passes through the insulating sleeve in the up-down direction and that communicates with the ceramic plate through hole. The insulating sleeve has a tool engaging portion that is engageable with an external tool, and upon being engaged with the external tool, the tool engaging portion transmits rotation torque of the external tool to the insulating sleeve.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
75.
CERAMIC WIRING MEMBER MOTHERBOARD AND CERAMIC WIRING MEMBER
A ceramic wiring member motherboard (100) is formed such that, as viewed from the thickness direction, a plurality of ceramic wiring members (110, 120) having a rectangular shape are laid side by side and are integrally connected. The plurality of ceramic wiring members (110, 120) include first ceramic wiring members (110) and second ceramic wiring members (120). Each of the first ceramic wiring members (110) and each of the second ceramic wiring members (120) are disposed such that a first side (111) of the first ceramic wiring member (110) and a second side (121) of the second ceramic wiring member (120) partially overlap. A first via hole (131) and a first via conductor (28) are formed in a region where the first side (111) and the second side (121) overlap. The first ceramic wiring member (110) and the second ceramic wiring member (120) are point symmetrically disposed with respect to the first via conductor (28).
A porous cylindrical support for use in supporting a zeolite membrane has a generally cylindrical inside surface having a central axis extending in the longitudinal direction and a generally cylindrical outside surface that surrounds the inside surface. A zeolite membrane is formed on the outside surface. A maximum value A and a minimum value B of a support thickness in a circumferential direction satisfy (A−B)/(A+B)≤0.3 in at least part of the support in the longitudinal direction, the support thickness being a radial distance between the inside surface and the outside surface. By reducing a variation in support thickness, it is possible to improve uniformity in the thickness of the zeolite membrane formed on the support.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
C01B 39/48 - Other types characterised by their X-ray diffraction pattern and their defined composition using at least one organic template directing agent
C07C 7/144 - Purification, separation or stabilisation of hydrocarbons; Use of additives using membranes, e.g. selective permeation
A wafer mounting stage 10, which is one example of a member for a semiconductor manufacturing apparatus, comprises a ceramic plate 20, a ceramic plate through hole 24, a base plate 30, a base plate through hole 34, an insulation sleeve 50, and a sleeve through hole 54. The sleeve through hole 54 penetrates the insulation sleeve 50 in the vertical direction and communicates with the ceramic plate through hole 24. The insulation sleeve 50 is bonded to the base plate through hole 34 via a bonding layer 60. The insulation sleeve 50 includes a tool engagement section (female thread section 52) capable of engaging with an external tool. When engaged with the external tool, the tool engagement section transfers the rotational torque of the external tool to the insulation sleeve 50.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a core substrate (601) for constituting an interposer (700) on which a semiconductor element (811) is mounted, an inductor being built into the core substrate (601) . The core substrate (601) comprises a ceramic substrate (100), a conductor portion (201), and a magnetic material portion (301). The ceramic substrate (100) has a first surface (SF1) and a second surface (SF2) opposite the first surface (SF1) in the thickness direction, and includes a through-hole (HL1) between the first surface (SF1) and the second surface (SF2). The conductor portion (201) passes through the through-hole (HL1), and is made of a sintered material containing a sintered metal. The magnetic material portion (301) surrounds the conductor portion (201) in the through-hole (HL1), and is made of a ceramic material. The ceramic substrate (100) and the magnetic material portion (301) are inorganically bonded to each other, and the magnetic material portion (301) and the conductor portion (201) are inorganically bonded to each other.
Conductor parts (201A, 201B) pass through a through-hole (HL) in an insulator substrate (100) and are composed of a sintered material including a sintered metal. A magnetic body part (301) surrounds the conductor parts (201A, 201B) in the through-hole (HL), is composed of a ceramic, is inorganically joined to the conductor parts (201A, 201B), and constitutes an inductor with the conductor parts (201A, 201B). Wiring parts (441A, 441B) include connecting vias (441vA, 441vB) that each have a bottom surface electrically connected to the conductor parts (201A, 201B). The bottom surfaces of the connecting vias (441vA, 441vB) are spaced away from the magnetic body part (301).
This package (51) has a cavity (CV) and includes a heat-dissipating plate (11) and a ceramic frame (21). The heat-dissipating plate (11) has: a main surface (P2) that comprises a first metal-containing sintering material, the main surface (P2) including a cavity surface that faces the cavity; a heat-dissipating surface (P1) that is on the side opposite from the main surface (P2); and a side surface (P4b) that is between the heat-dissipating surface (P1) and the main surface (P2). The ceramic frame (21) has an inner surface (P3) that surrounds the cavity (CV), and an outer surface (P4a) that is on the side opposite from the inner surface (P3). The main surface (P2) and/or the side surface (P4b) of the heat-dissipating plate (11) includes a joining surface that is directly joined to the ceramic frame (21).
Provided is a waveguide element in which a resin material substrate can be supported by a supporting substrate and thermal resistance can be reduced. A waveguide element according to an embodiment of the present invention is capable of guiding electromagnetic waves having a frequency of 30 GHz to 20 THz. The waveguide element comprises: a resin material substrate; a conductor layer provided on the upper portion of the resin material substrate; and a supporting substrate positioned on the opposite side of the resin material substrate from the conductor layer wherein the resin material substrate and the supporting substrate are directly bonded.
Provided is a gas sensor element or the like in which a diffusion mode of NOx reaching a measurement electrode is changed from molecular diffusion to a mode of diffusing while repeatedly colliding with a wall face of a sufficiently narrow flow path. In a gas sensor element according to one aspect of the present invention, a porous diffusion layer covering a measurement electrode has a porosity that is lower than the porosity of a leading end protection layer covering at least a face of an element substrate in which a gas inlet is open, and that is 5% or more and 25% or less.
Provided is a gas sensor element or the like in which the diffusion mode of NOx that reaches a measurement electrode is changed from molecular diffusion to a mode of diffusing while repeatedly colliding with a wall face of a sufficiently narrow flow path. In a gas sensor element according to one aspect of the invention, a porous diffusion layer, which accounts for 70% or more of a cross-section of a flow path of a measurement target gas that is orthogonal to a flow direction of the measurement target gas, has a porosity of 5% or more and 25% or less, and is located at a position that is upstream of the measurement electrode and where the distance to the measurement electrode is 0.15 mm or less.
A methane production system includes a co-electrolysis device and a reforming device connected to the co-electrolysis device. The co-electrolysis device has a co-electrolysis cell including a first electrode at which H2, CO, and O2− are produced from CO2 and H2O, an electrolyte capable of transferring O2−, and a second electrode at which O2 is produced from the O2− transferred from the first electrode through the electrolyte. The reforming device has a reforming cell that produces CH4 from the H2 and CO produced at the first electrode.
A reactor includes a second flow path on a permeation side of a separate membrane. The second flow path includes an inflow port open to a first space between a first seal portion and a flow stop unit, and an outflow port open to a second space between a second seal portion and a flow stop unit. A housing includes a sweep gas supply port for supplying a sweep gas to the first space and a sweep gas exhaust port for discharging the sweep gas from the second space. In a side view of the reactor, a direction in which the sweep gas flows through the second space is opposite to a direction in which the sweep gas flows through the second flow path.
Provided is a coin-shaped lithium ion secondary battery including a positive electrode layer, a negative electrode layer, a separator interposed between, an electrolytic solution, and an exterior body having a coin shape with a bulge on at least one surface and comprising a closed space accommodating the positive electrode layer, the negative electrode layer, the separator, and the electrolytic solution. The lithium ion secondary battery has a main region where all of the positive electrode layer, the negative electrode layer, and the separator overlap and a peripheral region which is devoid of at least one of the positive electrode layer, the negative electrode layer, and the separator, wherein a battery bulge ratio that is the ratio of the maximum thickness of the lithium ion secondary battery in the main region to the minimum thickness of the lithium ion secondary battery in the main region is 1.01 to 1.25.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 50/109 - Primary casings, jackets or wrappings of a single cell or a single battery characterised by their shape or physical structure of button or coin shape
H01M 50/186 - Sealing members characterised by the disposition of the sealing members
H01M 50/181 - Arrangements of electric connectors penetrating the casing adapted for the shape of the cells for button or coin cells
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 10/0569 - Liquid materials characterised by the solvents
H01M 10/0568 - Liquid materials characterised by the solutes
A reactor includes a second flow path on a permeation side of a separation membrane. The second flow path includes an inflow port open to a first space between a first seal portion and a flow rate adjustment unit, and an outflow port open to a second space between a second seal portion and a flow rate adjustment unit. A housing includes a sweep gas supply port for supplying a sweep gas to the first space and a sweep gas exhaust port for discharging the sweep gas from the second space. In a side view of the reactor, a direction in which the sweep gas flows from the first space to the second space via the flow rate adjustment unit is the same as a direction in which the sweep gas flows through the second flow path.
An inspection system for carrying out an inspection method for a pillar-shaped honeycomb structure, the inspection system including: a robot arm with a robot hand at a tip of the robot arm, the robot hand comprising a pair of gripping surfaces capable of gripping the pillar-shaped honeycomb structure from the first end surface and the second end surface, the pair of gripping surfaces being configured to be able to rotate the pillar-shaped honeycomb structure at a predetermined rotational speed while gripping the pillar-shaped honeycomb structure from the first end surface and the second end surface; the area camera for the side surface; a screen that can display the strip-shaped images; and a controller that can at least set a rotation speed of the pair of gripping surfaces and the shutter speed of the area camera for the side surface.
G01B 21/02 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
A sensor element for detecting a specific gas concentration in a measurement-object gas, the sensor element includes: an element body internally provided with a measurement-object gas flow portion that introduces a measurement-object gas and causes the measurement-object gas to flow therethrough; a reference-gas introduction portion disposed inside the element body, the reference-gas introduction portion being configured to introduce a reference gas; a reference-gas adjustment pump cell having a pump reference electrode disposed inside the element body, the reference-gas adjustment pump cell being configured to pump oxygen into a periphery of the pump reference electrode; and a sensor cell having a voltage reference electrode disposed inside the element body, and a measurement-object gas-side electrode disposed inside or outside the element body, the sensor cell being configured to generate a voltage based on an oxygen concentration in a periphery of the measurement-object gas-side electrode.
A reactor includes a separation membrane permeable to a product of a conversion reaction of a raw material gas containing at least hydrogen and carbon oxide to a liquid fuel, a non-permeation side flow path extending in an approximately vertical direction on a non-permeation side of the separation membrane, the raw material gas flowing through the non-permeation side flow path, and a catalyst configured to fill the non-permeation side flow path and promote the conversion reaction. The catalyst includes a first layer and a second layer disposed upward of the first layer, and a mean equivalent circle diameter of catalyst particles included in the first layer is larger than a mean equivalent circle diameter of catalyst particles included in the second layer.
B01D 53/22 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
This solid electrolyte contains Li, Mα, Mβ, Mγ, and Cl. The Mα is at least one element selected from the group consisting of Zr and Hf; the Mβ is at least one element selected from the group consisting of Ta and Nb; and the Mγ is at least one element selected from the group consisting of Gd, Yb, Dy, Er, Ho, Eu, and Sc. A solid electrolyte having high lithium ion conductivity and high stability can thereby be provided.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
Provided is an age-hardenable copper alloy bonded body that achieves a very high bonding strength. This copper alloy bonded body is formed from a plurality of members that are made of an age-hardenable copper alloy and that are diffusion bonded to each other. In said copper alloy bonded body, the bonding surface between the plurality of members remains, and (i) the age-hardenable copper alloy is a beryllium-copper alloy that has a beryllium content of 0.7 wt% or less, and inclusions constituted by an oxide, a carbide, and/or an intermetallic compound have an area ratio of 7.5% or less in an HAADF-STEM image of the rectangular cross-section which includes the bonding surface and which has a long side of 800 nm and a short side of 400 nm, or (ii) the age-hardenable copper alloy is a copper alloy that does not contain beryllium, and inclusions constituted by an oxide, a carbide, and/or an intermetallic compound have an area ratio of 30% or less in an HAADF-STEM image of the rectangular cross-section which includes the bonding surface and which has a long side of 800 nm and a short side of 400 nm.
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
An electronic component includes a first surface with a first electrode and a second surface with a second electrode. A measuring instrument includes a first terminal and a second terminal. Only the second surface out of the first surface and the second surface is adhered to a conductive adhesive sheet. The first terminal of a measuring instrument is electrically connected to the first electrode at the first surface, the second terminal of the measuring instrument is electrically connected to the second electrode through the conductive adhesive sheet at the second surface, and the electronic component is measured using the measuring instrument.
There is provided a zinc secondary battery including a unit cell including: a positive electrode plate; a negative electrode plate; a nonwoven fabric covering or wrapping up each of the positive electrode plate and the negative electrode plate; a hydroxide ion conductive separator; and an electrolytic solution; and a battery container housing the unit cell. Each element is vertically arranged, and an excessive portion of the electrolytic solution is always retained on a bottom of the battery container in an amount corresponding to a liquid level lower than lower ends of the positive electrode plate and the negative electrode plate. The nonwoven fabric covering or wrapping up the positive electrode plate has a lower extension portion contactable with the excessive portion of the electrolytic solution, and a lower end of the lower extension portion is always positioned below the liquid level of the excessive portion of the electrolytic solution.
A sensor element is for detecting a specific gas concentration in a measurement-object gas, and includes: an element body including an oxygen-ion-conductive solid electrolyte layer and internally provided with a measurement-object gas flow portion that introduces the measurement-object gas and causes the measurement-object gas to flow therethrough; a flow portion pump cell having a pump inner electrode disposed in an internal cavity of the measurement-object gas flow portion, the flow portion pump cell being configured to pump out oxygen from the internal cavity or pump oxygen into the internal cavity; and a flow portion sensor cell having a voltage inner electrode disposed in the internal cavity, the flow portion sensor cell being configured to generate a voltage based on an oxygen concentration in the internal cavity.
A sensor element is for detecting a specific gas concentration in a measurement-object gas, and includes: an element body internally provided with a measurement-object gas flow portion; an adjustment chamber pump cell having an adjustment electrode disposed in an oxygen concentration adjustment chamber of the measurement-object gas flow portion, and a pump outer electrode disposed outside the element body, the adjustment chamber pump cell being configured to pump out oxygen from the oxygen concentration adjustment chamber or pump oxygen into the oxygen concentration adjustment chamber; a reference-gas introduction portion disposed inside the element body; and an outer sensor cell having a voltage outer electrode disposed outside the element body, and a reference electrode disposed inside the element body, the outer sensor cell being configured to generate a voltage based on an oxygen concentration in the measurement-object gas outside the element body.
Provided is a joined body of an age-hardenable copper alloy in which an extremely high joining strength is achieved. The copper alloy joined body is constituted from a plurality of members of age-hardenable copper alloy diffusion-bonded to each other, and joining interfaces between the plurality of members remain therein. The copper alloy joined body is such that the beryllium content of the age-hardenable copper alloy is 0.7 wt% or less, and in a laser microscope image of a cross-section that includes the joining interfaces, the proportion of the total length of line segments corresponding to discontinuous regions relative to the total length of a joining interface line defined along the joining interfaces and positions that were joining interfaces is 3.5% or above. The discontinuous regions are defined as regions in which when a plurality of perpendicular lines are drawn at a pitch of 5 μm with respect to the joining interface line, three or more mutually adjacent perpendicular lines do not intersect with the remaining joining interfaces.
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
A solid electrolyte according to the present invention contains A, Mα, Mβ, Mγ and Cl; A represents at least one element that is selected from the group consisting of Li and Na; Mα represents at least one element that is selected from the group consisting of Zr and Hf; Mβ represents at least one element that is selected from the group consisting of Ta and Nb; Mγ represents at least one element that is selected from the group consisting of Gd, Yb, Dy, Er, Ho, Eu and Sc; and the amount of substance of Cl is higher than the amount of substance of A. Consequently, the present invention is able to provide a solid electrolyte which has a high ionic conductivity and high stability.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
A member for a semiconductor manufacturing apparatus, the member has a wafer placement surface and includes: a plurality of gas outflow passages each having an opening on the wafer placement surface; a common gas passage that is in communication with the plurality of gas outflow passages; and at least one gas inflow passage that is in communication with the common gas passage from a surface of the member for a semiconductor manufacturing apparatus that is on an opposite side from the wafer placement surface, the number of the at least one gas inflow passage being smaller than the number of the gas outflow passages in communication with the common gas passage. Among the plurality of gas outflow passages, a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
