|
H10N 10/00
|
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects |
|
H10N 10/01
|
Manufacture or treatment |
|
H10N 10/10
|
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects |
|
H10N 10/13
|
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction |
|
H10N 10/17
|
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device |
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H10N 10/80
|
Constructional details |
|
H10N 10/81
|
Structural details of the junction |
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H10N 10/82
|
Connection of interconnections |
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H10N 10/85
|
Thermoelectric active materials |
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H10N 10/813
|
Structural details of the junction the junction being separable, e.g. using a spring |
|
H10N 10/817
|
Structural details of the junction the junction being non- separable, e.g. being cemented, sintered or soldered |
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H10N 10/851
|
Thermoelectric active materials comprising inorganic compositions |
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H10N 10/852
|
Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur |
|
H10N 10/853
|
Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth |
|
H10N 10/854
|
Thermoelectric active materials comprising inorganic compositions comprising only metals |
|
H10N 10/855
|
Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen |
|
H10N 10/856
|
Thermoelectric active materials comprising organic compositions |
|
H10N 10/857
|
Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material |
|
H10N 15/00
|
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect |
|
H10N 15/10
|
Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point |
|
H10N 15/20
|
Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point |
|
H10N 19/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups |
|
H10N 30/00
|
Piezoelectric or electrostrictive devices |
|
H10N 30/01
|
Manufacture or treatment |
|
H10N 30/02
|
Forming enclosures or casings |
|
H10N 30/03
|
Assembling devices that include piezoelectric or electrostrictive parts |
|
H10N 30/04
|
Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning |
|
H10N 30/05
|
Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes |
|
H10N 30/06
|
Forming electrodes or interconnections, e.g. leads or terminals |
|
H10N 30/07
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base |
|
H10N 30/08
|
Shaping or machining of piezoelectric or electrostrictive bodies |
|
H10N 30/09
|
Forming piezoelectric or electrostrictive materials |
|
H10N 30/20
|
Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators |
|
H10N 30/30
|
Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors |
|
H10N 30/40
|
Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers |
|
H10N 30/045
|
Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising |
|
H10N 30/50
|
Piezoelectric or electrostrictive devices having a stacked or multilayer structure |
|
H10N 30/053
|
Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes |
|
H10N 30/057
|
Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes |
|
H10N 30/60
|
Piezoelectric or electrostrictive devices having a coaxial cable structure |
|
H10N 30/063
|
Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts |
|
H10N 30/067
|
Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts |
|
H10N 30/071
|
Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate |
|
H10N 30/072
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies |
|
H10N 30/073
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives |
|
H10N 30/074
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing |
|
H10N 30/076
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition |
|
H10N 30/077
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition |
|
H10N 30/078
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition |
|
H10N 30/079
|
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control |
|
H10N 30/80
|
Constructional details |
|
H10N 30/081
|
Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off |
|
H10N 30/082
|
Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography |
|
H10N 30/084
|
Shaping or machining of piezoelectric or electrostrictive bodies by moulding or extrusion |
|
H10N 30/085
|
Shaping or machining of piezoelectric or electrostrictive bodies by machining |
|
H10N 30/086
|
Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding |
|
H10N 30/87
|
Electrodes or interconnections, e.g. leads or terminals |
|
H10N 30/088
|
Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing |
|
H10N 30/089
|
Shaping or machining of piezoelectric or electrostrictive bodies by machining by punching |
|
H10N 30/092
|
Forming composite materials |
|
H10N 30/093
|
Forming inorganic materials |
|
H10N 30/095
|
Forming inorganic materials by melting |
|
H10N 30/097
|
Forming inorganic materials by sintering |
|
H10N 30/098
|
Forming organic materials |
|
H10N 30/853
|
Ceramic compositions |
|
H10N 30/857
|
Macromolecular compositions |
|
H10N 35/00
|
Magnetostrictive devices |
|
H10N 35/01
|
Manufacture or treatment |
|
H10N 35/80
|
Constructional details |
|
H10N 35/85
|
Magnetostrictive active materials |
|
H10N 39/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups |
|
H10N 50/00
|
Galvanomagnetic devices |
|
H10N 50/01
|
Manufacture or treatment |
|
H10N 50/10
|
Magnetoresistive devices |
|
H10N 50/20
|
Spin-polarised current-controlled devices |
|
H10N 50/80
|
Constructional details |
|
H10N 50/85
|
Magnetic active materials |
|
H10N 52/00
|
Hall-effect devices |
|
H10N 52/01
|
Manufacture or treatment |
|
H10N 52/80
|
Constructional details |
|
H10N 52/85
|
Magnetic active materials |
|
H10N 59/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups |
|
H10N 60/00
|
Superconducting devices |
|
H10N 60/01
|
Manufacture or treatment |
|
H10N 60/10
|
Junction-based devices |
|
H10N 60/12
|
Josephson-effect devices |
|
H10N 60/20
|
Permanent superconducting devices |
|
H10N 60/30
|
Devices switchable between superconducting and normal states |
|
H10N 60/35
|
Cryotrons |
|
H10N 60/80
|
Constructional details |
|
H10N 60/81
|
Containers; Mountings |
|
H10N 60/82
|
Current path |
|
H10N 60/83
|
Element shape |
|
H10N 60/84
|
Switching means for devices switchable between superconducting and normal states |
|
H10N 60/85
|
Superconducting active materials |
|
H10N 60/355
|
Power cryotrons |
|
H10N 69/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group |
|
H10N 70/00
|
Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching |
|
H10N 70/10
|
Solid-state travelling-wave devices |
|
H10N 70/20
|
Multistable switching devices, e.g. memristors |
|
H10N 79/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group |
|
H10N 80/00
|
Bulk negative-resistance effect devices |
|
H10N 80/10
|
Gunn-effect devices |
|
H10N 89/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group |
|
H10N 97/00
|
Electric solid-state thin-film or thick-film devices, not otherwise provided for |
|
H10N 99/00
|
Subject matter not provided for in other groups of this subclass |
