In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate having a first side and a second side, a first mirror disposed to the first side of the substrate, a second mirror disposed to the first side of the substrate and defining a first optical cavity between the first mirror and the second mirror, an active region between the first mirror and the second mirror, and a third mirror defining a second optical cavity. The VCSEL may be configured to generate a primary optical mode and a secondary optical mode under direct modulation. The second optical cavity may be configured to resonate the secondary optical mode.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/30 - Structure ou forme de la région active; Matériaux pour la région active
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/42 - Réseaux de lasers à émission de surface
3.
CONTROLLING REFRACTIVE INDEX PROFILE DURING FIBER PREFORM MANUFACTURING
In some implementations, a substrate tube in a modified chemical vapor deposition process may rotate while glass precursors flow into the substrate tube at a fixed rate. Dopants may be delivered into the substrate tube while heat is applied to the substrate tube to deposit, on an inner wall of the substrate tube, a layer of material including the glass precursors and the dopants. A lateral position of an exit of an injection tube used to deliver the dopants may be adjusted while the substrate tube is rotated and heat is applied to the substrate tube such that the material deposited on the inner wall of the substrate tube has an azimuthally non-uniform doping concentration. Alternatively, a rotation of the substrate tube may be adjusted to create opposing temperature gradients within the substrate tube, causing non-uniform layer deposition to occur on different sides of the substrate tube in alternating passes.
C03B 37/012 - Fabrication d'ébauches d'étirage de fibres ou de filaments
C03B 37/018 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques par dépôt de verre sur un substrat de verre, p.ex. par dépôt chimique en phase vapeur
C03B 37/027 - Fibres constituées de différentes variétés de verre, p.ex. fibres optiques
4.
METHODS FOR DRIVING OPTICAL LOADS AND DRIVER CIRCUITS FOR OPTICAL LOADS
A driver circuit, for generating narrow electrical pulses of high repetition rate with high peak current and low after pulse ringing to drive an optical load, may include a source, a first circuit path, and a second circuit path. The first circuit path may be connected to the source and may include inductive elements and a switch. The switch being in a closed state may charge current in the inductive elements through the first circuit path. The second circuit path may connect to the optical load and may be connected to the source. The second circuit path may include the inductive elements and a capacitive element in series with the optical load. The switch transitioning from the closed state to an open state may discharge current from the inductive elements through the second circuit path to provide an electrical pulse to the optical load.
H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
5.
OPTICAL DEVICE THAT INCLUDES AN EPITAXIAL LAYER STRUCTURE WITH TRENCHES AND GROOVES
An optical device includes a substrate and an epitaxial layer structure disposed over the substrate. The epitaxial layer structure includes a first clad layer disposed over the substrate, a first waveguide layer disposed over the first clad layer, an active layer disposed over the first waveguide layer, a second waveguide layer disposed over the active layer, a second clad layer disposed over the second waveguide layer, and a cap layer disposed over the second clad layer. The optical device further includes a pair of trenches formed in an inner region of a surface of the epitaxial layer structure, and a pair of grooves, each formed in an outer region of the surface of the epitaxial layer structure. Each trench does not extend into the active layer, and each groove extends into the active layer. A light-current curve associated with the laser optical device is kink-free and/or smooth.
In some implementations, a laser diode array may comprise a cavity that includes a rear facet and a front facet and multiple emitters that are transversely single mode and disposed within the cavity. In some implementations, the multiple emitters each include a seeding section having a constant emitter width that is single mode at the rear facet and a flared section having a monotonically expanding emitter width that increases adiabatically over a majority of a length of the cavity such that outputs from the multiple emitters are single mode at the front facet. In some implementations, the emitter width is less than twenty micrometers at the front facet.
In some implementations, an optical receiver includes a polarization beam splitter configured to split a reception signal into a first polarization reception signal and a second polarization reception signal, a first demultiplexing component configured to demultiplex the first polarization reception signal into a first optical signal and a second optical signal associated with a first polarization, a second demultiplexing component configured to demultiplex the second polarization reception signal into a third optical signal and a fourth optical signal associated with a second polarization, a first demodulation component configured to mix the first optical signal and the third optical signal with a first local oscillator signal to demodulate the first optical signal and the third optical signal, and a second demodulation component configured to mix the second optical signal and the fourth optical signal with a second local oscillator signal to demodulate the second optical signal and the fourth optical signal.
In some implementations, an optical receiver includes a demultiplexing component configured to demultiplex a reception signal into a first reception signal and a second reception signal, a first polarization beam splitter configured to split the first reception signal into a first optical signal associated with a first polarization and a second optical signal associated with a second polarization, a second polarization beam splitter configured to split the second reception signal into a third optical signal associated with the first polarization and a fourth optical signal associated with the second polarization, a first demodulation component configured to mix the first optical signal and the second optical signal with a first local oscillator signal, and a second demodulation component configured to mix the third optical signal and the fourth optical signal with a second local oscillator signal.
An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
10.
OPTICAL MODULE WITH DOUBLE EMITTER CHIPS AND DOUBLE DOVE PRISMS
An optical module may include a diode laser with dual emitters respectively configured to emit a first laser beam and a second laser beam in a beam propagation direction. The optical module may include a fast axis collimator (FAC) arranged to collimate the first and second laser beams in a vertical direction relative to the beam propagation direction and a slow axis collimator (SAC) arranged after the FAC to collimate the first and second laser beams in a horizontal direction relative to the beam propagation direction. The optical module may include a pair of Dove prisms between the FAC and the SAC, with respective axes rotated relative to the first emitter and the second emitter such that the first laser beam and the second laser beam swap fast and slow axes and are stacked in a fast axis direction after passing through the Dove prisms.
In some implementations, an electrical drive circuit may generate a rectangular optical pulse using cathode pre-charge and cathode-pull compensation. The electrical drive circuit may include an anode and a cathode to connect an optical load, a switch, a first source connected between the anode and a ground, a rectifier connected between the cathode and the switch, a capacitor connected in parallel with the rectifier, a second source connected to the ground, and an inductor connected between the switch and the second source. In some implementations, when the switch is closed and the optical load is connected, a first current is provided to the optical load through the first source, the rectifier, and the switch, and a second current is provided to the optical load through the first source, the capacitor, and the switch, where a rise time of the first current complements a fall time of the second current.
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
H03K 3/53 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation d'un élément accumulant de l'énergie déchargé dans une charge par un dispositif interrupteur commandé par un signal extérieur et ne comportant pas de réaction positive
In some implementations, an optical assembly includes an optical power monitor to receive a portion of an optical beam and to perform a measurement on the portion of the optical beam; an optical tap to tap the optical beam and provide the portion of the optical beam; and an optical element to allow the portion of the optical beam from the optical tap to propagate toward the optical power monitor, wherein the optical element includes an absorptive material to absorb light other than the portion of the optical beam that is propagated toward the optical power monitor.
A system may perform an uptapering process to cause a signal fiber to have a fiber core with a first uptapered thickness profile and a fiber cladding with a second uptapered thickness profile. The system may perform, after performing the uptapering process, an uptapering removal process to cause the fiber cladding of the signal fiber to not have the second uptapered thickness profile. The system may perform, after performing the uptapering removal process, a bundling process to bundle the signal fiber and a set of one or more pump fibers in a bundle configuration. The system may perform, after performing the bundling process, a bundle unification process to cause the bundle configuration to form a unified bundle configuration. The system may perform, after performing the bundle unification process, an attachment process to cause an end of the unified bundle configuration to attach to an end of an output fiber.
G02B 6/255 - Epissage des guides de lumière, p.ex. par fusion ou par liaison
H01S 3/094 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente
G02B 6/04 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage formés par des faisceaux de fibres
A shutdown circuit may include a filter, for receiving a laser trigger signal for a laser emitter, that is configured to output a filtered signal. The shutdown circuit may include a logic gate configured to receive the filtered signal and at least one of a first signal based on a signal from a photodiode or a second signal based on a signal from a conductive path. The shutdown circuit may include a flip-flop configured to receive an output of the logic gate and to output an enablement signal that is based on the output of the logic gate, and a driver circuit for a switch configured to control current flow to the laser emitter. The driver circuit may be configured to receive the enablement signal and the laser trigger signal and to output the laser trigger signal based on whether the enablement signal is a first or a second voltage.
H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
15.
HIGH-FREQUENCY SWITCHING DC/DC CONVERTER WITH DIFFERENT CONTROL LOOP AND SWITCHING FREQUENCIES
In some implementations, a microcontroller may trigger a control loop to read a feedback voltage based on an interrupt that has a periodicity based on a control loop frequency. The microcontroller may calculate a target duty cycle for a first transistor and a second transistor based on the feedback voltage. The target duty cycle may control respective proportions of time that the first transistor and the second transistor spend in an on state. The microcontroller may output, based on the target duty cycle, a first pulse-width modulation (PWM) signal to switch a state of the first transistor and a second PWM signal to switch a state of the second transistor. In some implementations, the first PWM signal and the second PWM signal may be associated with a switching frequency that differs from the control loop frequency.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
In some implementations, a light detection and ranging (LIDAR) system includes a vertical cavity surface emitting laser (VCSEL) array including a plurality of VCSELs. The VCSEL array may have a first aspect ratio. The LIDAR system may include a set of transmission optics configured to receive light from the VCSEL array and to illuminate a field of view having a second aspect ratio that is greater than the first aspect ratio. The LIDAR system may include an image sensor array configured for line readout. The image sensor array may have a third aspect ratio that is different from the first aspect ratio. The LIDAR system may include a set of reception optics configured to image light reflected from objects in the field of view, having the second aspect ratio, onto the image sensor array having the third aspect ratio.
Some implementations described herein may provide an optical device. The optical device may include an optical emitter and an optical element aligned to the optical emitter. The optical element may include an oxidation aperture, one or more distributed Bragg reflectors (DBRs) disposed on the oxidation aperture, and a stacked periodic grating structure disposed on the one or more DBRs. The stacked periodic grating structure may include a set of layers. The set of layers may include alternating layers of a first material and a second material. The stacked periodic grating structure may have a selected period, depth, and fill factor that are selected to achieve greater than a threshold level of optical field confinement in a transverse direction of an optical field emitted by the optical emitter.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
18.
RIBBON BONDING GROUND PLANE FOR RADIO FREQUENCY PERFORMANCE IMPROVEMENT IN ELECTRO-OPTICAL DEVICES
In some implementations, an electro-optical device includes a first substrate including a first ground pad and a first signal pad; a second substrate including a second ground pad and a second signal pad, wherein the first signal pad and the second signal pad form a signal pad pair, wherein the first substrate is separated from the second substrate by less than a threshold amount; wherein the first substrate is configured to receive an optical component and the second substrate is configured to receive an electrical component that is couplable to the optical component via a wire bonding between the first signal pad and the second signal pad; and a planar ribbon bonding connecting the first ground pad to the second ground pad and diagonally crossing the wire bonding.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
19.
VERTICAL CAVITY SURFACE EMITTING LASER WITH ACTIVE LAYER-SPECIFIC ADDRESSABILITY
A vertical cavity surface emitting laser (VCSEL) may include an epitaxial structure that includes a first active layer, a second active layer, and a tunnel junction therebetween. The VCSEL may include a set of contacts that are electrically connected to the epitaxial structure. The set of contacts may include three or more contacts, and the set of contacts may be electrically separated from each other on the VCSEL. At least one contact, of the set of contacts, may be electrically connected to the epitaxial structure at a depth between the first active layer and the second active layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
An optical module includes a stepped structure that includes a plurality of steps, a plurality of laser diodes (e.g., broad area laser diodes (BALs)), a transform lens; a grating; and an output coupler (OC). At least one laser diode, of the plurality of laser diodes, is disposed on each step of the plurality of steps of the stepped structure. The transform lens is configured to receive a plurality of laser beams emitted by the plurality of laser diodes and to direct the plurality of laser beams to the grating. The grating is configured to receive and to combine the plurality of laser beams into a single laser beam, and to direct the single laser beam to the OC. The OC is configured to receive the single laser beam from the grating and to direct a portion of the of the single laser beam out of the optical module.
In some implementations, an optical amplifier system includes a variable gain optical amplifier that is an erbium doped fiber amplifier. The variable gain optical amplifier may provide a first gain stage for an optical signal. The optical amplifier system may include a fixed gain optical amplifier that is an erbium-ytterbium doped fiber amplifier. The fixed gain optical amplifier may provide a second gain stage for the optical signal following the first gain stage.
A fiber combiner includes a capillary and a plurality of input fibers disposed within the capillary. A first portion of the capillary has a first non-zero slope profile along a first portion of an output end of the fiber combiner. A second portion of the capillary has a second non-zero slope profile along a second portion of the output end of the fiber combiner. The second non-zero slope profile is different than the first non-zero slope profile.
G02B 6/28 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux
23.
PACKAGE-ON-PACKAGE AND SYSTEM-IN-PACKAGE PACKAGING ARCHITECTURES
An optical package may include a fan-out-wafer-level-packaging (FOWLP) sub-package including a redistribution layer (RDL) on a molded component including an electrical chip. The optical package may include an optical chip over the FOWLP sub-package. The optical chip may be electrically connected to the RDL. An area of a surface of the RDL may be larger than an area of a surface of the optical chip. The optical package may include a package housing over the optical chip such that light to be received or transmitted by the optical chip may is to pass through the package housing.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02208 - Supports; Boîtiers caractérisés par la forme des boîtiers
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02315 - Supports; Boîtiers Éléments de montage, p.ex. embases Éléments de support, p.ex. bases ou montures
H01S 5/0239 - Combinaisons d’éléments électriques ou optiques
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
24.
THIN DIELECTRIC SUBSTRATE FOR LOW THERMAL RESISTANCE AND LOW PARASITIC INDUCTANCE
In some implementations, a substrate comprises a ceramic core, multiple metal-filled vias through the ceramic core, and a first metal layer, on a top side of the ceramic core, including metal traces, over respective metal-filled vias. The substrate comprises a second metal layer, including a first electrical contact over a first metal trace, a second electrical contact over a second metal trace, and a third electrical contact over a third metal trace, where the second metal trace is electrically isolated from the first and third metal traces. The substrate comprises a thin dielectric layer separating the first metal layer and the second metal layer. The dielectric layer between the first metal layer and the second layer provides the substrate with a low parasitic inductance and a low thermal resistance based on a thickness of the dielectric layer and/or a material used for the dielectric layer.
H05K 1/11 - Eléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
In some implementations, an emitter device includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include a first mirror, a second mirror, and an active layer between the first mirror and the second mirror. The epitaxial layers may include at least one oxidation layer including a first oxidized region and a second oxidized region separate from the first oxidized region. The first oxidized region and the second oxidized region may be configured to provide a strain on the epitaxial layers that is radially asymmetric. The epitaxial layers may include a set of oxidation trenches in the set of epitaxial layers to expose the at least one oxidation layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
A laser component includes a pump-signal combiner, which includes a first capillary, a plurality of pump fibers, a second capillary, and a signal fiber. The plurality of pump fibers, the second capillary, and the signal fiber are arranged in a bundle configuration. The bundle configuration is disposed within an internal portion of the first capillary. A cross-section of the bundle configuration includes an outer area, in which the plurality of pump fibers are disposed, and an inner area, in which the second capillary and the signal fiber are disposed. The signal fiber is disposed within an internal portion of the second capillary.
G02B 6/04 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage formés par des faisceaux de fibres
H01S 3/094 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente
An optical system may include a scanning element, a detector, and a planar lightwave circuit (PLC)-based walk-off compensator. The PLC-based walk-off compensator may include a plurality of input waveguides associated with receiving an optical signal from the scanning element. The PLC-based walk-off compensator may include an optical switch configured to select one or more input waveguides, from the plurality of input waveguides, to be coupled to the detector. The selection of the one or more input waveguides may be based on an expected walk-off of the optical signal. The PLC-based walk-off compensator may include an output waveguide to provide the optical signal to the detector.
G02B 6/12 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4913 - Circuits de détection, d'échantillonnage, d'intégration ou de lecture des circuits
In some implementations, a master oscillator power amplifier (MOPA) system may include one or more pump laser sources, a power amplifier, and a multicore oscillator that includes an input side coupled to the one or more pump laser sources and an output side coupled to the power amplifier. In some implementations, the multicore oscillator may include an active fiber, including an inner cladding, an outer cladding surrounding the inner cladding, and multiple active fiber cores, embedded in the inner cladding, to convert pump light into signal light. In some implementations, the multicore oscillator may include multiple first reflectors that are each configured to operate as a high reflector on the input side of the oscillator, and multiple second reflectors that are each configured to operate as an output coupler on the output side of the oscillator.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/0941 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p.ex. par une diode laser
29.
SEMICONDUCTOR LAYER STRUCTURE WITH A THIN BLOCKING LAYER
A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
30.
DRIVER CIRCUIT FOR AN ADDRESSABLE ARRAY OF OPTICAL EMITTERS
In some implementations, a controller may cause a first switch of a driver circuit to transition from an open state to a closed state to charge an inductive element of the driver circuit. The controller may cause the first switch to transition from the closed state to the open state to discharge the inductive element. The controller may cause a second switch of the driver circuit to transition from an open state to a closed state to select a capacitive element to be charged by discharging the inductive element. The controller may cause a third switch of the driver circuit to transition from an open state to a closed state to discharge the selected capacitive element to provide an electrical pulse to an optical emitter, of an array of optical emitters of the driver circuit, that is connected to the selected capacitive element.
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
31.
Liquid crystal on silicon panel with electrically-conductive adhesive
In some implementations, a liquid crystal on silicon panel includes a backplane with an electrical contact formed on the backplane, a first alignment layer disposed on the backplane and interfacing with the electrical contact, a conductive layer that is light transmissive, a second alignment layer disposed on the conductive layer, and a plurality of beads in an electrically-conductive adhesive between the first alignment layer and the second alignment layer. Electrically-conductive particles within the electrically-conductive adhesive may make the electrically-conductive adhesive electrically-conductive. A first set of the electrically-conductive particles may puncture the first alignment layer to contact the electrical contact, and a second set of the electrically-conductive particles may puncture the second alignment layer to contact the conductive layer. An electrical connection of the electrical contact and the conductive layer may be via a plurality of the electrically-conductive particles.
In some implementations, an optical receiver may receive, from an optical transmitter, a signal that is based on a clock of the optical transmitter. The optical receiver may generate a sampling clock signal that is swept over a range of sampling rates. The optical receiver may perform, using the sampling clock signal at a sampling rate of the range of sampling rates, oversampling of the signal to detect transition edges of the signal. The optical receiver may determine that the detected transition edges are indicative of a correspondence between the sampling rate and a data rate of the signal. The optical receiver may terminate sweeping of the sampling clock signal over the range of sampling rates based on the correspondence between the sampling rate and the data rate. The optical receiver may adjust the sampling clock signal to align the sampling clock signal with transition edges of the signal.
An optical device may include a fiber to provide a beam. The optical device may include a graded-index element to expand or magnify the beam. An input facet of the graded-index element may be adhered to an output facet of the fiber. The optical device may include an optical transformation element to transform the beam after the beam is expanded or magnified by the graded-index element. An input facet of the optical transformation element may be adhered to an output facet of the graded-index element. The optical transformation element may comprise at least one active optical element or may be non-birefringent such that orthogonal polarizations of the beam do not experience distinct phase transformations.
In some implementations, a light detection and ranging (LIDAR) system may generate a transmission signal by modulating a signal with a first signal and a second signal. The signal may be modulated with the first signal using a first combination of polarization and phase and with the second signal using a second combination of polarization and phase. The LIDAR system may transmit the transmission signal and receive a reception signal that is based on a reflection of the transmission signal from an object. The LIDAR system may mix the reception signal with the oscillator laser signal to generate a first detection signal associated with the first signal and a second detection signal associated with the second signal, and may determine a first phase shift of the first signal based on the first detection signal and a second phase shift of the second signal based on the second detection signal.
G01S 17/26 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels les impulsions transmises utilisent une onde porteuse modulée en fréquence ou en phase, p.ex. pour la compression d'impulsion des signaux reçus
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
In some implementations, an electro-optic modulator may include a waveguide to propagate an optical signal in a direction of propagation. The electro-optic modulator may include a signal electrode, associated with the waveguides, to modulate the optical signal. The signal electrode may include a base structure. The signal electrode may include a loading line structure comprising one or more segments, where a segment, of the one or more segments, connects to the base structure via a plurality of electrically-conductive bridges.
G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence
36.
PATTERNED WAFER MICRORULER FOR OVERSPRAY SCREENING OF LASER ANTI-REFLECTIVE AND/OR HIGHLY REFLECTIVE FACET COATINGS
In some implementations, a microruler is patterned on a surface of a wafer to enable visual overspray screening and/or quantitative measurement. For example, a laser bar cleaved from a wafer may comprise multiple laser devices that each include a first facet and a second facet, an anti-reflective (AR) coating applied to the first facet, and a highly reflective (HR) coating applied to the second facet. Furthermore, a set of microrulers may be patterned on a surface of the laser bar, where each microruler in the set of microrulers is aligned with a bar cleaving line where the laser bar was cleaved from the wafer, and each microruler has multiple graduation markings that each represent a respective distance from the bar cleaving line such that the graduation markings can be used to quantitatively measure an overspray of the AR coating or the HR coating relative to the bar cleaving line.
In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
An optical device may include emitter array to emit light. The optical device may include a collimating element to create an image of the light emitted by the emitter array. The optical device may include a diffractive optical element (DOE) to generate a pattern from the image of the light. The optical device may include a distortion correction element to reduce distortion in the pattern on a screen or to shape the pattern on the screen.
In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a set of epitaxial layers disposed on the substrate layer. The set of epitaxial layers may include a first mirror and a second mirror. At least one of the first mirror or the second mirror may include at least one reflector pair that includes a semiconductor material layer and an oxidized semiconductor material layer. The set of epitaxial layers may include an oxidation trench axially extending into at least the second mirror, an active region between the first mirror and the second mirror, and an oxidation layer with an oxidation aperture.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
In some implementations, an optical system includes an emitter array including a plurality of emitters. The plurality of emitters are arranged in a plurality of channels and the emitter array is configured to illuminate on a per-channel basis. Respective positions of emitters, of the plurality of emitters, of a channel, of the plurality of channels, vary across a width of the channel. The optical system includes a lens to receive light from the emitter array and a diffuser to receive light from the lens. The diffuser is configured to diffuse light along a length of the plurality of channels of the emitter array. The optical system includes a corrective optical element to receive light from the diffuser.
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
41.
Non-contact wafer-level burn-in comprising a wireless power transfer component
In some implementations, a semiconductor wafer includes a plurality of optical emitters, wherein an optical emitter, of the plurality of optical emitters, is associated with a receiver conducting medium for receiving wireless power transfer, wherein the receiver conducting medium is configured to couple to a wireless power transfer component for wireless power transfer at a common resonant frequency, and wherein the receiver conducting medium is configured to power the optical emitter to provide an optical output when the wireless power transfer is applied at the common resonant frequency.
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
In some implementations, a fiber amplifier system includes a fiber oscillator and a fiber amplifier coupled to an output end of the fiber oscillator. The fiber oscillator may include an active fiber having a first end and a second end, where the active fiber is to receive pump light from one or more optical sources; one or more high-reflectivity mirrors coupled to the first end of the active fiber; and multiple output coupler mirrors coupled to the second end of the active fiber. The one or more high-reflectivity mirrors and the multiple output coupler mirrors may form an optical cavity with the active fiber for generating laser light. The multiple output coupler mirrors may have respective center wavelengths that are different. The multiple output coupler mirrors may have respective reflection spectrums that are different.
H01S 3/30 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p.ex. l'effet Brillouin ou Raman stimulé
43.
SYSTEM AND METHOD FOR VERTICALLY ALIGNING OPTICAL FIBER TO PHOTONIC WAFERS
A method and system of determining a z-distance between an optical fiber and a substrate are presented. The method can include, for instance: obtaining an image that includes an end of the optical fiber and a reflection of the end of the optical fiber from a surface of the substrate, and processing the image to determine a z-distance along a z-axis between the end of the optical fiber and the substrate.
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02335 - Montage à orientation directe, p.ex. montage à côté épitaxial au-dessus ou montage à jonction au-dessus
In some implementations, an optical device includes a two-zone vertical cavity surface emitting laser (VCSEL) with a set of emission zones configured to emit structured light forming a set of dots; a single-element collimating lens aligned to the two-zone VCSEL; and a tiling diffractive optical element (DOE) aligned to the single-element collimating lens, wherein the tiling DOE comprises a set of tile segments aligned to the set of emission zones, and wherein a tile segment, of the set of tile segments, is configured to project, from the set of emission zones toward portions of a target, the structured light forming the set of dots.
A multi junction vertical cavity surface emitting laser (VCSEL) may comprise a substrate, a top contact, and a stack comprising a set of layers formed between the substrate and the top contact. In some implementations, the set of layers formed between the substrate and the top contact may comprise a cavity comprising a first active region, a second active region, and a tunnel junction connecting the first active region and the second active region, a first distributed Bragg reflector (DBR) pair comprising a high-contrast p-type DBR (p-DBR) and a low-contrast p-DBR between the cavity and the top contact, and a second DBR pair comprising a high-contrast n-type DBR (n-DBR) and a low-contrast n-DBR between the cavity and the substrate. The low-contrast p-DBR and the low-contrast n-DBR are located on an inner side of the stack, and the high-contrast p-DBR and the high-contrast n-DBR are located on an outer side of the stack.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
47.
OPTICAL PUMP SOURCE OUTPUT POWER AND HEALTH MONITORING
In some implementations, a device may apply a modulation to an electrical current to derive a modulated electrical current. The device may supply the modulated electrical current to an optical pump source for an optical amplifier to cause the optical pump source to emit light based on the modulated electrical current. The device may generate a signal based on an optical power of the light emitted by the optical pump source. The device may filter the signal with respect to a feedback signal that is to result from the modulated electrical current to derive a filtered signal. The device may process the filtered signal to identify whether the feedback signal is present in the filtered signal based on a power indicated by the filtered signal. Whether the feedback signal is present indicates a state of the optical pump source.
H01S 3/0941 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p.ex. par une diode laser
H01S 3/094 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente
48.
VERTICAL-CAVITY SURFACE-EMITTING LASER WITH DENSE EPI-SIDE CONTACTS
An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/02 - Lasers à semi-conducteurs - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
A laser module includes a laser submodule, a polarization beam combiner (PBC), a beam rotator, a grating, and an output fiber (e.g., each disposed on an internal surface of a floor of the laser module). The laser submodule is configured to emit an array pattern of beams, which the PBC is configured to combine into a vertical stack pattern of beams, which the beam rotator is configured to rotate into a horizontal stack pattern of beams, which the grating is configured to combine into an overlapped pattern of beams, which the output fiber is configured to emit. The vertical stack pattern of beams, the horizontal stack pattern of beams, and the overlapped pattern of beams are to transmit through the laser module parallel to a single common plane (e.g., that is parallel to the internal surface of the floor of the laser module).
A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p.ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02 - Lasers à semi-conducteurs - Détails ou composants structurels non essentiels au fonctionnement laser
51.
High cladding power mode field adapter for kilowatt fiber lasers
As described herein, a mode field adapter (MFA) comprises a first fiber including a core associated with a fundamental mode field diameter and a cladding with a diameter that decreases toward a waist. The MFA comprises a second fiber including a core associated with a fundamental mode field diameter that matches the fundamental mode field of the first fiber at the waist and a cladding with a diameter that matches the diameter of the cladding of the first fiber at the waist and increases from the waist of the second fiber. The cladding of the first fiber may be adiabatically etched such that a core-to-cladding ratio of the first fiber changes over a length of the first fiber, and the core and the cladding of the second fiber may be adiabatically tapered such that a core-to-cladding ratio of the second fiber is constant over a length of the second fiber.
An optical device may include an outer box. The optical device may include an inner box within the outer box. The optical device may include a heating element on a surface of the inner box. The heating element may include one or more openings. The optical device may include one or more mounting pads. A mounting pad of the one or more mounting pads may be arranged in an opening of the one or more openings and mechanically couple the inner box to the outer box through the opening.
An optical device may include a lens system. The optical device may include a first scanning component to receive an optical beam and to scan the lens system with the optical beam. The optical device may include a second scanning component to receive the optical beam from the lens system and to scan a field of view with the optical beam, where the lens system is positioned between the first scanning component and the second scanning component. The lens system may include a beam expander.
In some implementations, a device may generate a data set including at least modal gain values and modal loss values for a semiconductor optical amplifier (SOA) slice. The device may determine, based on the data set, respective widths for a plurality of slices of an SOA using an autoregressive model. A width, of the respective widths, for a slice, of the plurality of slices, may be associated with a maximum conversion efficiency achievable for the slice at a given current density. The device may generate information indicating a geometry for the SOA based on the respective widths for the plurality of slices.
A structured light system includes a camera module and a dot projection module. The dot projection module includes a submount, an emitter array disposed on the submount, and a diffractive optical element (DOE) disposed over the emitter array. The emitter array includes a plurality of emitters arranged in a periodic emitter pattern and the emitter array is oriented at a non-zero angle relative to a rectilinear axis of the submount.
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p.ex. des franges de moiré, sur l'objet
A heat sink assembly may include an alignment body with an opening configured to receive a crystal rod, wherein the opening is configured to maintain a crystalline orientation of the crystal rod relative to a physical orientation of the alignment body. The heat sink assembly may include a first cooling stack, wherein the first cooling stack includes a first cutout to receive the crystal rod and the alignment body. The heat sink assembly may include a second cooling stack, wherein the second cooling stack includes a second cutout to receive the crystal rod and the alignment body, and wherein the first cooling stack and the second cooling stack are configured to mate and at least partially sandwich the crystal rod and the alignment body.
H01S 3/042 - Dispositions pour la gestion thermique pour des lasers à l'état solide
H01S 3/02 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure
A heat sink assembly may include a first cooling stack. The first cooling stack may include a silver-diamond composite material. The heat sink assembly may include a second cooling stack. The second cooling stack may include the silver-diamond composite material. The heat sink assembly may include a crystal rod. The crystal rod may be an ytterbium-doped, yttrium-aluminum-garnet laser medium. The crystal rod may be at least partially sandwiched by the first cooling stack and the second cooling stack.
A transmitter may include a digital signal processor (DSP) to generate an electrical signal associated with a beacon and a data signal. The transmitter may include an electro-optical component to convert the electrical signal to an optical signal to be transmitted by the transmitter. The beacon and the data signal may be on a common wavelength in the optical signal. A power of the beacon within the optical signal may be based on a value of an amplitude modulation factor applied to the beacon by the DSP in association with generating the electrical signal.
H04B 10/11 - Dispositions spécifiques à la transmission en espace libre, c. à d. dans l’air ou le vide
H04B 10/118 - Dispositions spécifiques à la transmission en espace libre, c. à d. dans l’air ou le vide spécialement adaptées aux communications par satellite
59.
OPTICAL ASSEMBLY THAT INCLUDES AN OPTICAL ELEMENT CONNECTED TO A VERTICAL CAVITY SURFACE EMITTING LASER DEVICE VIA TWO OR MORE ATTACHMENT STRUCTURES
An optical assembly includes an integrated circuit (IC) driver chip; an optical subassembly disposed on the IC driver chip that includes: a vertical cavity surface emitting laser (VCSEL) device, an optical element disposed above a top surface of the VCSEL device, and two or more attachment structures disposed between the VCSEL device and the optical element; and two or more additional attachment structures disposed between the IC driver chip and the optical subassembly. The VCSEL device includes: a cathode contact disposed on the top surface of the VCSEL device, and an anode contact disposed on the top surface of the VCSEL device. The optical element includes two or more conductive traces on a bottom surface of the optical element. The two or more attachment structures are disposed between the two or more conductive traces of the optical element, and the cathode contact and the anode contact of the VCSEL device.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
An in-fiber beam scanning system may comprise an input fiber to provide a beam, a feeding fiber comprising an imaging bundle with multiple cores embedded in a first cladding that is surrounded by a second cladding, and an in-fiber beam shifter that comprises a first multibend beam shifter coupled to the input fiber, a graded index fiber following the first multibend beam shifter, and a second multibend beam shifter following the graded index fiber and coupling into the feeding fiber. In some implementations, the first multibend beam shifter is actuated by a first amount and the second multibend beam shifter is actuated by a second amount to shift the beam in two dimensions and deliver the beam into one or more target cores in the imaging bundle.
A micro-electro-mechanical system (MEMS) device includes a mirror; at least one hinge; an electrostatic comb structure; and a control device. The control device causes, for a period of time, a voltage to be supplied to the electrostatic comb structure to cause the electrostatic comb structure to tilt the mirror about the at least one hinge in a particular direction. The control device causes, after the period of time and at an instant of time, the voltage to cease being supplied to the electrostatic comb structure. A tilt angle of the mirror, at the first instant of time, is less than a maximum tilt angle of the mirror in the particular direction. An angular momentum of the mirror, at the instant of time, is greater than zero kilogram meters squared per second in the particular direction.
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
A driver circuit may include an inductive element and a first circuit path connected to the inductive element, the first circuit path including an optical emitter and a capacitive element in series with the optical emitter. The driver circuit may include a second circuit path connected to the inductive element, the second circuit path including a voltage divider element to produce an output signal and a signal output to provide the output signal to a time-to-digital converter. The driver circuit may include a switch having an open state and a closed state. The switch in the closed state may cause current to charge the inductive element. The switch transitioning from the closed state to the open state may cause the inductive element to discharge current to provide an electrical pulse through the first circuit path to the optical emitter and through the second circuit path to the signal output.
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/30 - Structure ou forme de la région active; Matériaux pour la région active
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
A bidirectional optical device includes a first optical component, wherein a portion of a first interface of the first optical component has a reflector coating, wherein a second interface of the first optical component has an optical coating, and wherein the first optical component includes an internal splitting interface disposed between the first interface and the second interface, and a second optical component including a reflector aligned to the second interface of the first optical component, wherein the first optical component and the second optical component comprise an unbalanced Mach-Zehnder (MZ) interferometer.
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/12 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
H04B 10/25 - Dispositions spécifiques à la transmission par fibres
H04J 14/02 - Systèmes multiplex à division de longueur d'onde
A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
An optical assembly may comprise an input fiber to provide a beam, a process fiber comprising a ring-shaped outer core surrounded by a cladding, and a first beam shifter arranged to receive the beam from the input fiber and to shift the beam spatially to illuminate the ring-shaped outer core of the process fiber. The optical assembly may further comprise a second beam shifter arranged to receive the beam from the first beam shifter and to add skew to the beam that is launched into the ring-shaped outer core of the process fiber.
A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
A light detection and ranging (lidar) receiver may include a first photodiode, a first amplifier connected to the first photodiode, and a first analog-to-digital converter (ADC) connected to an output of the first amplifier. The lidar receiver may include a second photodiode, a second amplifier connected to the second photodiode, and a second ADC connected to the second amplifier. The lidar may include a processor connected to an output of the first ADC and an output of the second ADC and a direct-current-to-direct-current converter connected to an output of the processor and to the first photodiode and the second photodiode. The processor may determine, based on the output of the first ADC and the output of the second ADC, a first bias to apply to the first photodiode and a second bias to apply to the second photodiode.
In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.
A dot projector may include a vertical-cavity surface-emitting laser (VCSEL). The dot projector may include one or more collimating elements to collimate light emitted by the VCSEL. An effective focal length of the one or more collimating elements may be larger than an optics length of the dot projector. The dot projector may include an optical element including a periodic optical phase function to replicate the light after collimation by the one or more collimating elements and an aberration-correcting phase function to correct spot aberrations in a dot pattern resulting from the tiling or splitting of the light.
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p.ex. des franges de moiré, sur l'objet
H01S 5/42 - Réseaux de lasers à émission de surface
In some implementations, an opto-electrical device includes a heatsink; a thermally conductive element disposed on a first region of a surface of the heatsink; an adaptive thickness thermally conductive pad disposed on the thermally conductive element; an integrated circuit (IC) disposed on the adaptive thickness thermally conductive pad; a thermoelectric cooler (TEC) disposed on a second region of the surface of the heatsink; an opto-electrical chip disposed on the TEC; and a substrate disposed on the IC and the opto-electrical chip, wherein the substrate is configured to electrically connect the IC and the opto-electrical chip.
In some implementations, a vertical cavity surface emitting laser (VCSEL) package may include a substrate. The VCSEL package may include a VCSEL disposed on a surface of the substrate. The VCSEL package may include a VCSEL driver disposed on the surface of the substrate. The VCSEL package may include an embedded capacitor electrically connected to the VCSEL and the VCSEL driver. The embedded capacitor may be formed from a subset of layers of the substrate. The capacitor may be associated with a first capacitance that is different from a second capacitance of at least one other capacitor associated with the substrate.
A driver circuit may include an optical emitter, a capacitive element, and an inductive element. The driver circuit may include a first switch that, in a closed state, is to cause charging of the inductive element, and when transitioning from the closed state to an open state is to cause discharging of the inductive element to charge the capacitive element. The driver circuit may include a second switch that in a closed state is to cause discharging of the capacitive element to provide an electrical pulse to the optical emitter. The driver circuit may include a signal generator configured to generate a first signal for controlling the open state and the closed state of the first switch, and a pulse shortening element configured to shorten a pulse width of the first signal to generate a second signal for controlling the open state and the closed state of the second switch.
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
A shutdown circuit may include a filter, for receiving a laser trigger signal for a laser emitter, that is configured to output a filtered signal. The shutdown circuit may include a logic gate configured to receive the filtered signal and at least one of a first signal based on a signal from a photodiode or a second signal based on a signal from a conductive path. The shutdown circuit may include a flip-flop configured to receive an output of the logic gate and to output an enablement signal that is based on the output of the logic gate, and a driver circuit for a switch configured to control current flow to the laser emitter. The driver circuit may be configured to receive the enablement signal and the laser trigger signal and to output the laser trigger signal based on whether the enablement signal is a first or a second voltage.
H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
75.
Integration of passive microwave stop-band filter into a radio frequency (RF) interconnect printed circuit board for opto-electronic module RF bandwidth control
An optical device may include an optical subassembly and a digital signal processor (DSP). The optical device may include a radio frequency (RF) interconnect that electrically connects the optical subassembly and the DSP. The optical device may include a passive RF filter on one or more transmission lines of the RF interconnect.
H04B 10/00 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques
H04B 10/80 - Aspects optiques concernant l’utilisation de la transmission optique pour des applications spécifiques non prévues dans les groupes , p.ex. alimentation par faisceau optique ou transmission optique dans l’eau
In some implementations, a monolithic optical fiber may comprise a tapered core having a first diameter at an input end and a second diameter at an output end. The tapered core may comprise a first tapered region at the input end, a second tapered region at the output end, and a central region having a constant diameter that is larger than the first diameter and the second diameter. The first tapered region expands monotonically from the first diameter to the constant diameter of the central region along a length of the first tapered region, and the second tapered region contracts monotonically from the constant diameter of the central region to the second diameter along a length of the second tapered region. The monolithic optical fiber may be used as a delivery fiber to deliver a laser beam from a fiber laser engine to a process head.
A driver circuit may include an array of optical emitters arranged in one or more rows and one or more columns. The array of optical emitters includes an optical emitter associated with a row and a column. The driver circuit may include a capacitive element connected to the row, a voltage booster element connected to the capacitive element, where the voltage booster element includes an inductive element, and a first switch having an open state and a closed state. The first switch in the closed state is to cause charging of the inductive element, and in the open state is to cause discharging of the inductive element to charge the capacitive element. The driver circuit may include a second switch having an open state and a closed state. The second switch in the closed state is to cause discharging of the capacitive element through the row and the column.
In some implementations, an optical assembly includes a substrate that includes a thermally conductive core, an IC driver chip that is disposed on a first surface of the substrate, and a VCSEL device that includes an electrically insulated surface that is disposed on the thermally conductive core of the substrate within a cavity formed in the second surface of the substrate. The VCSEL device includes a cathode contact disposed on a surface of the VCSEL device and an anode contact disposed on the surface of the VCSEL device. The VCSEL device includes a plurality of emitters and a microlens component that is disposed over the plurality of emitters on the surface of the VCSEL device.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
In some implementations, an optical assembly comprises an optical cavity; one or more detectors; and an optical component having an input face and an output face configured to receive an input beam to the input face and to produce one or more primary output beams, and a plurality of secondary output beams from the output face, the secondary output beams resulting from multiple internal reflections within the optical component. At least one of the input face is not perpendicular to the input beam or the output face is not perpendicular to the one or more primary output beams. Each primary output beam is transmitted through the optical cavity perpendicular to at least one surface of the optical cavity, and directed to a respective one of the one or more detectors. Each detector is arranged to exclude at least a portion of each secondary output beam.
G01J 9/02 - Mesure du déphasage des rayons lumineux; Recherche du degré de cohérence; Mesure de la longueur d'onde des rayons lumineux par des méthodes interférométriques
G02B 17/00 - Systèmes avec surfaces réfléchissantes, avec ou sans éléments de réfraction
An etalon may include a plurality of reflectors, wherein at least one reflector, of the plurality of reflectors, is partially reflecting of light in a frequency range and each other reflector, of the plurality of reflectors is either partially or fully reflecting of light in the frequency range, and wherein the plurality of reflectors comprises at least three reflectors arranged to define a volume of a resonant optical cavity.
In some implementations, an optical fiber may include a core and a cladding surrounding the core. The core and the cladding may provide light guidance along the optical fiber in a light propagation direction. The core may have a taper in the light propagation direction in a section of the optical fiber. A diameter of the core may decrease independently of a diameter of the cladding in the section of the optical fiber.
The Bi-Di coherent transmission system is configured with at least one pair of modules coupled to one another via a single fiber. The modules each are configured with a pair of laser outputting two reference signals at respective different wavelengths λ1o and λ2o, photonic transceiver and a wavelength division multiplexer (WDM) coupler. The photonic transceivers each have transmitter and receiver branches integrated in a photonic circuit and receiving the reference signals. The transmitter is configured to modulate the received reference signals λ1oT and λ2oT which are further coupled into the WDM coupler. The WDM couplers each sort out one of the modulated signals and transmit the other modulated signal such that the transmitted modulated signal at different wavelengths λ1oT and λ2oT are coupled into respective opposite ends of the fiber and propagate towards one another in opposite directions. The transmitted modulated signals arc coupled into respective branches through the WDM couplers with each transmitted modulated signal interfering with the reference signals at wavelengths λ1oT and λ2oT. The photodiodes of respective receiving brandies are configured to detect a beat frequency of the interfering signals at the same wavelength.
A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
84.
VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH AT LEAST ONE BONDING LAYER
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
A vertical-cavity surface-emitting laser (VCSEL) may include a substrate. The VCSEL may include a bottom mirror structure over the substrate. The VCSEL may include a first dilute nitride active region over the bottom mirror structure. The VCSEL may include a tunnel junction over the first dilute nitride active region. The VCSEL may include a second dilute nitride active region over the tunnel junction. The VCSEL may include a top mirror structure over the second dilute nitride active region.
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
86.
HIGH EFFICIENCY VERTICAL GRATING COUPLER FOR FLIP-CHIP APPLICATION
A method and system for forming a photonic device. A photonic device may include a substrate, a cladding layer disposed on the substrate, an electrical device region formed within the cladding layer, the electrical device region having a plurality of electrical device component layers that include at least one metal layer, and a grating region formed within the cladding layer, the grating region including a grating coupler and the at least one metal layer. The at least one metal layer is deposited simultaneously in the electrical device and grating regions and is used in the grating region to reflect light emitted from the grating coupler.
An optical assembly includes a substrate; an optical subassembly that is disposed on a region of a surface of the substrate; a housing that is disposed on another region of the surface of the substrate; a first optical element that is disposed on a first support component of the housing; and a second optical element that is disposed on a second support component of the housing. The optical subassembly includes an integrated circuit (IC) driver chip; a redistribution layer (RDL) structure that is disposed on a surface of the IC driver chip, wherein the RDL structure includes a cavity; and a vertical cavity surface emitting laser (VCSEL) device disposed on a region of the surface of the RDL structure that is within the cavity of the RDL structure.
A substrate may include a thermally conductive metal core having a top side and a bottom side, a first dielectric coating on the top side of the metal core, a second dielectric coating on the bottom side of the metal core, a first metal circuit layer formed above the first dielectric coating, and a second metal circuit layer formed under the second dielectric coating. In some implementations, the first dielectric coating and the second dielectric coating have thicknesses below sixty micrometers and respective thermal resistances under fifteen degrees Celsius per watt. In some implementations, one or more electrical currents flowing vertically across a dielectric coating have a low parasitic inductance based on the thickness of the dielectric coating, and the metal core may dissipate heat flowing across the dielectric coating and into the metal core.
A circuit (e.g., for use in a time-of-flight camera projector module) may include a top metal layer having an anode and a cathode, one or more capacitors connected to the anode, a vertical-cavity surface-emitting laser connected to the anode and the cathode, and a driver connected to the cathode. The circuit may further include a bottom metal layer connected to ground and arranged below the top metal layer, and a dielectric layer separating the top metal layer and the bottom metal layer. In some implementations, the dielectric layer has a thickness under sixty micrometers and a thermal resistance under fifteen degrees Celsius per watt. Accordingly, a current loop flowing vertically across the dielectric layer has a low self-inductance based on the thickness of the dielectric layer and the bottom metal layer is arranged to dissipate heat generated by the current loop flowing vertically across the dielectric layer.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
In some implementations, an emitter may include a substrate and a set of layers on the substrate. The set of layers may include a first mirror, a second mirror that includes a partial reflector and an additional layer, and at least one active region between the first mirror and the second mirror. A first reflectivity of the second mirror at a lateral center of the second mirror may be different than a second reflectivity of the second mirror at a lateral edge of the second mirror.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
A method and system for an optical package assembly is disclosed. According to one example, the optical package assembly includes a photonic integrated circuit (PIC) chip, at least one fiber coupled to the PIC chip, a fiber lid plate disposed on at least a portion of the at least one fiber, and a cover plate having a surface coupled to the PIC chip and the fiber lid plate.
An optical assembly includes an optical cavity; an output detector; a reference detector; and a plate beam splitter, wherein the plate beam splitter has a first face and a second face, and is configured to form, from an input beam: a first output beam, that passes through the optical cavity and impinges the output detector, a first reference beam that impinges on the reference detector, a second output beam parallel to the first output beam, and a second reference beam parallel to the first reference beam; one of the first output beam or the first reference beam is a reflection of the input beam in the first face of the plate beam splitter; the output detector is configured to exclude at least a portion of the second output beam; and the reference detector is configured to exclude at least a portion of the second reference beam.
A die attachment material may include an ultra-violet (UV) curable resin and silver particles to attach a chip to a submount, where the silver particles are positioned within the UV curable resin. A method may include heating the die attachment material to obtain the UV curable resin on sintered silver particles, where at least a portion of the die attachment material is position between a chip and a submount. The method may further include irradiating, with UV light, the UV curable resin to obtain a polymer on the sintered silver particles. The polymer may form a layer on the sintered silver particles.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
B29C 35/08 - Chauffage ou durcissement, p.ex. réticulation ou vulcanisation utilisant l'énergie ondulatoire ou un rayonnement corpusculaire
94.
METHODS FOR INCORPORATING A CONTROL STRUCTURE WITHIN A VERTICAL CAVITY SURFACE EMITTING LASER DEVICE CAVITY
A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
A pluggable optical module may include a substrate. The pluggable optical module may include a compressible sliding thermal interface disposed on the substrate to contact a riding heatsink. The compressible sliding thermal interface material may be compressed to fill interstices between a first surface of the substrate and a second surface of the riding heatsink. The compressible sliding thermal interface may protrude from the first surface of the substrate such that insertion of the pluggable optical module into a cage compresses the compressible sliding thermal interface to achieve a threshold thermal boundary resistance.
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.
H01S 5/50 - Structures amplificatrices non prévues dans les groupes
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p.ex. dans des lasers à rétroaction répartie [lasers DFB]
A laser beam delivery system includes an optical beam launcher device and a waveguide assembly. The optical beam launcher device includes an optical relay system that includes a beam splitting optic that is configured to cause a laser beam that is input into the optical beam launcher device to be split into a first laser sub-beam and a second laser sub-beam, cause the first laser sub-beam to transmit to a first region of an input lens of the waveguide assembly, and cause the second laser sub-beam to transmit to a second region of the input lens. The waveguide assembly is configured to transmit the first laser sub-beam and the second laser sub-beam from the input lens to an output lens of the waveguide assembly, wherein the first laser sub-beam and the second laser sub-beam transmit from the waveguide assembly and form an output laser beam.
In some implementations, a vertical cavity surface emitting laser (VCSEL) array may include a substrate. In some implementations, the VCSEL array may include a set of cathodes disposed on the substrate in a first direction, wherein a cathode, of the set of cathodes, is defined by a serpentine shape. In some implementations, the VCSEL array may include a set of anodes disposed on the substrate in a second direction, wherein an anode, of the set of anodes, is defined by the serpentine shape.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
A photonic device is configured with a photonic integrated circuit (PIC), a plurality of fiber-based gain mediums in optical communication with the PIC, and at least one optical pump outputting pump light coupled into two or more gain mediums. At least one of the fiber-based gain media and the PIC form a hybrid resonant optical cavity there between operative to lase light into the PIC. The gain media further include one or more fiber amplifiers amplifying light signals coupled into and decoupled from the PIC. The photonic device is integrated with Si photonic passive and active photonic elements, while ail fiber links between the gain media and PIC are free from these elements.
In some implementations, a fiber optic combiner may comprise an enclosing tube having a geometric shape and multiple optical fibers bundled within the enclosing tube. In some implementations, the multiple fibers comprise at least one optical fiber having a core and a non-circular cladding surrounding the core. The non-circular cladding may cause the multiple optical fibers to have a larger tube fill factor and a lower expected beam parameter product increase factor relative to the multiple optical fibers all having circular claddings.
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
G02B 6/04 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage formés par des faisceaux de fibres
brevets
