The present invention relates to a shunt resistor and a shunt resistor manufacturing method. A shunt resistor (1) comprises a pair of electrodes (6, 7) connected to both ends of a resistor element (5). The pair of electrodes (6, 7) has a pair of voltage detection units (20, 21), and a hole (70) is provided in the resistor element (5) between the pair of voltage detection units (20, 21).
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
H01C 17/232 - Ajustement du coefficient de température; Ajustement de la valeur de la résistance par ajustement du coefficient de température
H01C 17/28 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour appliquer les bornes
The present invention provides: a temperature sensor which enables further simplification of a step for connecting a terminal; and a current detection device. This temperature sensor for measuring the temperature of a shunt resistor is provided with: a resin film which has a first surface and a second surface; a first conductive pattern which is provided on the first surface side of the resin film and serves as a temperature sensing part; and a pair of second conductive patterns which are provided on the first surface side or the second surface side of the resin film for the purpose of detecting the voltage of the shunt resistor.
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
G01K 1/14 - Supports; Dispositifs de fixation; Dispositions pour le montage de thermomètres en des endroits particuliers
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 19/32 - Compensation des variations de température
A resistor 10, which is an electronic component that provides suppression of thermal effects on a circuit board, has a structure in which an exterior member 5 encloses, inter alia: a resistor body 7 formed in a central area 6 of a first surface of an insulating substrate 2 and internal electrodes 8a to 8d that are formed in opposing edge areas 9a, 9b that sandwich the central area 6, wherein, at an upper surface portion of the exterior member 5, a second surface of the insulating substrate 2 is close-contactably exposed to an outer metal member 14. In addition, within a lower surface portion of the exterior member 5, protrusions 5a, 5b, which distance the resistor 10 from a circuit substrate 12, are formed at locations that contain a lead-out section of a lead terminal 3a to 3d and a corresponding region in the thickness direction of the exterior member.
H01C 1/084 - Dispositions de réfrigération, de chauffage ou de ventilation par refroidissement naturel, p.ex. ailettes, dissipateurs thermiques
H01C 1/028 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe l'élément résistif étant enrobé dans un matériau isolant pourvu d'une gaine extérieure
H01C 1/034 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe le boîtier ou l'enveloppe étant constitué par un revêtement ou un moulage sans gaine extérieure
The present invention relates to a resistor, particularly to a surface-mount resistor. A resistor (1) comprises protrusions (10, 10) that are formed on side surfaces (3c, 3c) of a pair of cap-like electrodes (3, 3).
H01C 1/148 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes enveloppant ou entourant l'élément résistif
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
An electronic component according to an embodiment of the present invention includes: a chip; a die pad to which the chip is secured; a suspension terminal extending from the die pad; a lead terminal electrically connected to the chip; and a dummy terminal, in which the suspension terminal is disposed closer to the dummy terminal than the lead terminal.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
Provided is a mounting structure for a chip component having high thermal shock resistance. In amounting structure for a chip resistor 1 according to the present invention, a separation distance L1 between a pair of back surface electrodes 3 formed on an insulating substrate 2 of a chip resistor 20 is set to be shorter than a separation distance L2 between a pair of lands 31 provided on a circuit board 30. Each of the back surface electrodes 3 is formed with a thick portion (first electrode portion 3a), and an external electrode 9 deposited on the back surface electrode 3 is connected on the corresponding land 31 via solder 32 with a top portion of the thick portion made positioned directly above an inner end of the land 31.
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01L 23/13 - Supports, p.ex. substrats isolants non amovibles caractérisés par leur forme
An object is to provide a sensor device capable of highly accurately detecting a flow rate at 360 degrees in a radial direction with respect to a first sensor element including a resistive element for flow rate detection. A sensor device according to the present invention includes a substrate, a first sensor element including a resistive element for flow rate detection, and a second sensor element including a resistive element for temperature compensation. Each of the first sensor element and the second sensor element is supported to be separated from a surface of the substrate via a pair of lead wires, and the first sensor element is disposed at a higher position than the second sensor element.
G01F 1/69 - Dispositions de structure; Montage des éléments, p.ex. relativement à l'écoulement de fluide utilisant un élément de chauffage, de refroidissement ou de détection d'un type particulier du type à résistance
G01F 1/696 - Circuits à cet effet, p.ex. débitmètres à courant constant
8.
ALL-SOLID-STATE POTASSIUM ION SELECTIVE ELECTRODE, AND METHOD FOR PRODUCING SAME
x6y22O, at least a portion of the Prussian blue analog particles has a monoclinic crystal structure, x is a number of 1.5-2, y is a number greater than 0 and less than or equal to 1, and n is a number greater than or equal to 0.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Temperature sensors; inclinometers; pressure sensors; pressure gauges; manometers; gas sensors; anemometers; flowmeters; sensors [measurement apparatus], other than for medical use; detectors; measuring devices, electric; electric current control devices; power distribution or control machines and apparatus; rotary converters; phase modifiers; electric resistances; fuses; electronic inductors; electrical inductors; electrical cells and batteries; ammeters; electric current sensors; voltmeters; electric or magnetic meters and testers; electric conductors; electric resistors for telecommunication apparatus; electric coils; fuses for telecommunication apparatus; parts and accessories for telecommunication machines and apparatus; telecommunication machines and apparatus; LED monitors; thermistors; semi-conductor elements; electronic circuits; integrated circuits; electronic components; resistance wires; electrodes; magnetic cores.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Temperature sensors; inclinometers; pressure sensors; pressure gauges; manometers; gas sensors; anemometers; flowmeters; sensors (measurement apparatus), other than for medical use; detectors; measuring devices, electric; electric current control devices; power distribution or control machines and apparatus; rotary converters; phase modifiers; electric resistances; fuses; electronic inductors; electrical inductors; electrical cells and batteries; ammeters; electric current sensors; voltmeters; electric or magnetic meters and testers; electric conductors; electric resistors for telecommunication apparatus; electric coils; fuses for telecommunication apparatus; electric resistors for telecommunication apparatus; parts and accessories for telecommunication machines and apparatus; telecommunication machines and apparatus; LED monitors; thermistors; semi-conductor elements; electronic circuits; integrated circuits; electronic components; resistance wires; electrodes; magnetic cores
A chip resistor according to the present invention includes an insulating substrate, a pair of back surface electrodes, a pair of top surface electrodes, a resistor, and a pair of end face electrodes. The back surface electrode includes the first electrode portion located inwardly and away from the end face of the insulating substrate, and the two second electrode portions arranged on two portions, respectively, in the short direction of the insulating substrate with the cutout portion, which is positioned between the end face of the insulating substrate and the first electrode portion, being interposed therebetween, and the maximum height of the first electrode portion is set to be more than the maximum height of the second electrode portions.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
H01C 17/28 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour appliquer les bornes
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
A sensor device according to the present invention includes a substrate including a heat generation portion, a casing including an accommodation portion accommodating the substrate, and a sensor element including a temperature-sensitive resistor and being supported by the substrate, in which the accommodation portion is divided into a plurality of accommodation spaces on a side closer to the sensor element. The accommodation portion is divided into a first accommodation space and a second accommodation space via division plates, and the first accommodation space is formed on a side closer to the sensor element than the second accommodation space, and widely as compared with the second accommodation space.
The present invention relates a shunt resistor and a shunt resistance device. The shunt resistor (1) includes an electrode member (10). The electrode member (10) includes a contact portion (10a) contacting a resistance element (5), and a slit (20) formed on the contact portion (10a).
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort
The present invention provides a chip resistor which has excellent corrosion resistance. A chip resistor 1 according to the present invention is provided with: a rectangular parallelopiped insulating substrate 2; a pair of front electrodes 3 that are formed on opposite ends of the front surface of the insulating substrate 2; a pair of back electrodes 4 that are formed on opposite ends of the back surface of the insulating substrate 2; a resistor 5 that bridges the pair of front electrodes 3; a second insulating layer (protective film) 7 that is formed from a resin material and covers the resistor 5; a third insulating layer (auxiliary film) 8 that is formed from a resin material and is superposed on the second insulating layer 7; a pair of auxiliary electrode layers 9 that are formed from a resin material containing conductive particles and are superposed on the front electrodes 3; a pair of end-face electrodes 10 that extend on opposite end faces of the insulating substrate 2 and enable electrical conduction between the auxiliary electrode layers 9 and the back electrodes 4; and a pair of outer plated layers 11 that are arranged so as to cover the surfaces of the auxiliary electrode layers 9 and the end-face electrodes 10. The auxiliary electrode layers 9 are formed to positions at which end surfaces of the third insulating layer 8 are covered; and the second insulating layer 7 contains a larger amount of an inorganic filler than the third insulating layer 8.
H01C 1/032 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe avec plusieurs couches entourant l'élément résistif
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
A sensor element (12) has a cross-sectional area that continuously only increases from a positive (+) electrode side toward a negative (−) electrode side, thereby leading a hot spot, which attempts to move to the negative electrode side, to a lower resistance side. A position that is at nearly equal distances from paired electrodes (13 and 15) formed on either end of the sensor element (12) is set as a hot spot generating position, so as to avoid damage to the electrodes due to heat emitted by the hot spot.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
B28B 1/30 - Fabrication d'objets façonnés à partir du matériau en appliquant le matériau sur un noyau ou une autre surface de moulage pour former une couche sur celle-ci
B28B 1/48 - Fabrication d'objets façonnés à partir du matériau en enlevant de la matière à partir de préformes de section pleine pour former des objets creux, p.ex. par poinçonnage ou perçage
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
18.
HETEROJUNCTION PHOTOCATALYST, PHOTOCATALYST COMPOSITE, METHOD FOR PRODUCING HETEROJUNCTION PHOTOCATALYST, AND METHOD FOR PRODUCING HYDROGEN
The present invention provides a heterojunction photocatalyst having higher photocatalytic activity than that of a conventional heterojunction photocatalyst. Further, the present invention provides a photocatalyst composite having the heterojunction photocatalyst on a substrate, a method for producing the heterojunction photocatalyst, and a method for producing hydrogen using the heterojunction photocatalyst or the photocatalyst composite The het junction photocatalyst of the present invention has a solid mediator between a hydrogen-evolution photocatalyst and an oxygen-evolution photocatalyst, and the solid mediator is selectively joined to an electrons collecting surface of the oxygen-evolution photocatalyst.
B01J 35/00 - Catalyseurs caractérisés par leur forme ou leurs propriétés physiques, en général
B01J 21/06 - Silicium, titane, zirconium ou hafnium; Leurs oxydes ou hydroxydes
B01J 23/68 - Argent ou or avec de l'arsenic, de l'antimoine, du bismuth, du vanadium, du niobium, du tantale, du polonium, du chrome, du molybdène, du tungstène, du manganèse, du technétium ou du rhénium
B01J 35/02 - Catalyseurs caractérisés par leur forme ou leurs propriétés physiques, en général solides
C01B 3/04 - Production d'hydrogène ou de mélanges gazeux contenant de l'hydrogène par décomposition de composés inorganiques, p.ex. de l'ammoniac
C01B 3/26 - Production d'hydrogène ou de mélanges gazeux contenant de l'hydrogène par décomposition de composés organiques gazeux ou liquides d'hydrocarbures avec des catalyseurs
B01J 23/00 - Catalyseurs contenant des métaux, oxydes ou hydroxydes métalliques non prévus dans le groupe
19.
JUMPER ELEMENT, SHUNT RESISTOR APPARATUS, AND METHOD OF ADJUSTING CHARACTERISTIC OF SHUNT RESISTOR APPARATUS FOR CURRENT DETECTION
The present invention relates to a jumper element, a shunt resistor apparatus, and a method of adjusting characteristic of a shunt resistor apparatus for current detection. The jumper element (10) for constituting the shunt resistor apparatus for current detection is made of conductive metal material. The jumper element (10) includes: a body structure (11) that can be coupled to a resistance element (5) constituting a part of the shunt resistor apparatus; and a protrusion (12) formed on a side portion of the body structure (11), wherein the protrusion (12) is located so as not to overlap the resistor element (5).
G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriques; Combinaisons structurelles de ces éléments avec ces appareils
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort
A chip resistor 10 comprises: a insulating substrate 1; a pair of upper surface electrodes 2; a resistor 3; a pair of lower surface electrodes 5; a pair of resin electrode layers 6 made of synthetic resin materials containing conductive particles and laminated on the pair of lower surface electrodes 5; a pair of end face electrodes 7; and a pair of external electrodes 8, wherein the pair of the lower surface electrodes 5 is made of metal thin film layers formed as thin films on a mounting surface of the insulating substrate 1, respectively, and includes exposed portions 5a exposed from the resin electrode layers 6, respectively, and the pair of external electrodes 8 is in contact with the exposed portions 5a of the lower surface electrodes 5 and entire surfaces of the resin electrode layers 6, respectively. [Selected drawing] FIG. 1
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
The present invention pertains to a shunt resistor and a shunt resistance device. A shunt resistor (1) comprises at least two stacked elements (50) which are each attached to an electrode member (10) and have a resistor (5). The electrode member (10) has at least two contact parts (10a) that come in contact with the at least two stacked elements (50).
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
22.
RESISTANCE ALLOY FOR USE IN SHUNT RESISTOR, USE OF RESISTANCE ALLOY IN SHUNT RESISTOR, AND SHUNT RESISTOR USING RESISTANCE ALLOY
Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ·m.
H01C 7/13 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant sensibles au courant
C22C 9/05 - Alliages à base de cuivre avec le manganèse comme second constituant majeur
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
C22F 1/02 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid en atmosphère neutre ou contrôlée ou dans le vide
The present invention relates to a shunt resistor and a current detection device. A current detection unit (2) includes voltage detection terminals (8A, 8B) provided at first characteristic positions on electrodes (6, 7) where the temperature coefficient of resistance of a shunt resistor (1) is a first coefficient, and voltage detection terminals (8C, 8D) provided at second characteristic positions on the electrodes (6, 7) where the temperature coefficient of resistance of the shunt resistor (1) is a second coefficient. The first coefficient and the second coefficient are different numerical values.
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
This load sensor element comprises: a substrate; an inorganic layer which is a first layer that is provided on a surface, which is one surface of the substrate, and that covers a section of the substrate; and a thin film resistor that is provided on the surface. The thin film resistor includes: a body section that is sandwiched between the substrate and the inorganic layer; and a first end section and a second end section that are mounted at an exposed section of the substrate that is not covered by the inorganic layer. The load sensor element also comprises a reinforcing layer which is a second layer that is provided on an underside surface, which is the other surface of the substrate, so as to sandwich the substrate together with the inorganic layer. In the load sensor element, the inorganic layer and the reinforcing layer are disposed so that one edge of the inorganic layer which contacts the surface and one edge of the reinforcing layer which contacts the underside surface are aligned in the thickness direction of the substrate.
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01L 1/26 - Mesures auxiliaires prises, ou dispositifs utilisés en liaison avec le mesurage des forces, p.ex. pour empêcher l'influence des composantes transversales de la force, pour empêcher la surcharge
This load sensor element comprises a substrate, and an inorganic layer which has an accepting surface for accepting a load and which is provided so as to cover a portion of a top surface, which is one surface of the substrate. The load sensor element is provided with a thin-film resistor configured from a resistor having a resistance value that varies in accordance with the load accepted by the inorganic layer. The thin-film resistor includes a main body portion sandwiched between the substrate and the inorganic layer, and one end portion and an other end portion, which are two end portions placed on exposed portions of the substrate that are not covered by the inorganic layer. The load sensor element is provided with a first temperature compensation resistor which is independent of the thin-film resistor and which is disposed on an exposed portion 28 of the top surface, which is said one surface of the substrate. The load sensor element is provided with a second temperature compensation resistor which is disposed on a rear surface, being another surface of the substrate, and which exhibits the same behavior as the first temperature compensation resistor.
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01L 1/26 - Mesures auxiliaires prises, ou dispositifs utilisés en liaison avec le mesurage des forces, p.ex. pour empêcher l'influence des composantes transversales de la force, pour empêcher la surcharge
An object is to provide a flow sensor element is non-directional and has an excellent sensor sensitivity. A flow sensor element includes a base body having a spherical shape, and a temperature-sensitive film pattern that is disposed over the entirety of a surface of the base body, and changes in an electrical resistance value due to a change in temperature. It is preferable that the temperature-sensitive film pattern be formed by trimming a temperature-sensitive film that has been formed on the surface of the base body. In the flow sensor element, the temperature-sensitive film pattern can be disposed over the entirety of the surface of the base body having a spherical shape. This enables a constant sensor sensitivity to be obtained regardless of a direction of a fluid, and the accuracy of detection of a flow rate can be improved.
Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to −36×10−6/K at 100° C. with reference to 25° C.
C22C 9/05 - Alliages à base de cuivre avec le manganèse comme second constituant majeur
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
Provided is a chip resistor that is capable of ensuring low TCR while increasing electric power even with low resistance. This chip resistor 1 comprises an insulation substrate 2, a pair of obverse electrodes 3 provided to the two obverse-surface end parts of the insulation substrate 2, a resistor body 5 connecting the two obverse electrodes 3, a glass body 6 provided on the resistor body 5, a low-resistance-value-adjusting trimming groove 5a formed in the resistor body 5 through the glass body 6; a first protection layer 7 formed so as to cover the trimming groove 5a in a region that is further inward than the pair of obverse electrodes 3, a second protection layer 8 formed so as to cover the first protection layer 7, a pair of end-surface electrodes 9 that extend to the two end surfaces of the insulation substrate 2 and are connected to the obverse electrodes 3, and a pair of external plating layers 10 that cover the end-surface electrodes 9. The first protection layer 7 comprises a resin material containing a heat-dissipating filler, and the second protection layer 8 comprises a resin material.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 1/032 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe avec plusieurs couches entourant l'élément résistif
This gas sensor is provided with a base material, a first electrode and a second electrode both arranged on the base material, and a gas detection unit connected to the first electrode and the second electrode, in which the gas detection unit is composed of a semiconductor oxide containing calcium ferrite and zirconium as essential components and also containing at least one metal element selected from aluminum, silver and tin.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
30.
CURRENT DETECTING DEVICE, AND METHOD FOR MANUFACTURING SAME
The present invention relates to a current detecting device and a method for manufacturing the same, and more particularly relates to a current detecting device provided with a shunt resistor, and a method for manufacturing the current detecting device. A current detecting unit (2) comprises: a plurality of pairs of voltage detection contacts (8A to 8H) electrically connected to a pair of electrodes (6, 7) of a shunt resistor (1); a plurality of pairs of voltage signal lines (9A to 9H) connected respectively to the plurality of voltage detection contacts (8A to 8H); a plurality of pairs of conductor element connection terminals (15A to 15H) connected respectively to the plurality of pairs of voltage signal lines (9A to 9H); and a pair of conductor elements (20, 21) attached to any one pair of conductor element connection terminals among the plurality of pairs of conductor element connection terminals (15A to 15H). The pair of conductor element connection terminals is selected in advance on the basis of an actual measurement result of a temperature coefficient of resistance of the shunt resistor (1).
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).
G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriques; Combinaisons structurelles de ces éléments avec ces appareils
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
H01C 17/28 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour appliquer les bornes
The present invention relates to a shunt resistor and a current detection device. A shunt resistor (1) comprises a first protrusion (11) and a second protrusion (12). The first protrusion (11) includes a part of a resistive body (5) and a part of a pair of electrodes (6, 7). The second protrusion (12) includes a part of the resistive body (5) and a part of the pair of electrodes (6, 7).
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
H01C 3/00 - Résistances métalliques fixes en fil ou en ruban, p.ex. bobinées, tressées ou en forme de grille
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
Provided is a shunt resistor with an enhanced strength and reduced electrical resistance between a resistive element and terminals of the shunt resistor. This shunt resistor includes a first terminal and a second terminal each made of an electrically conductive metal material; and a resistive element disposed between the first terminal and the second terminal. The first terminal and the second terminal each have a through-hole, and the resistive element is embedded in the through-holes of the first terminal and the second terminal in a depth direction thereof. Regions connecting the resistive element to the first terminal and the second terminal each have an alloy portion formed along an inner peripheral surface of the through-hole.
H01C 7/13 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant sensibles au courant
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
H01C 1/148 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes enveloppant ou entourant l'élément résistif
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
A shunt resistor capable of reducing an absolute value of a temperature coefficient of resistance is disclosed. The shunt resistor includes: a base structure including a resistance element and a pair of electrodes; a bridge structure configured to bridge the pair of electrodes and made of a conductor; and connections configured to couple the pair of electrodes to the bridge structure. The bridge structure has a higher resistance than a resistance of the base structure at the connections.
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriques; Combinaisons structurelles de ces éléments avec ces appareils
H01C 1/014 - Montage; Support la résistance étant maintenue et supportée entre deux éléments de support
[Problem] To provide an electronic component capable of maintaining the creepage distance between electrode terminals. [Solution] The present invention has a structure obtained forming an upper surface section having a prescribed thickness and having a rectangular shape when seen from a plan view, a resistor element housing section which is formed in the center on the bottom surface side of the upper surface section, and a first projection 3, a second projection 4 and a third projection 5 which function as legs and project in the vertical direction from the bottom surface of the upper surface section. The present invention maintains a long creepage distance between the electrode terminals formed on projections 3 and 4 via recesses of a prescribed depth which are formed on the bottom surface side so as to extend from one side in the short direction thereof across said housing section to the other side in said short direction between the first and third projections and also between the second and third projections on the bottom surface of the upper surface section.
H01C 1/028 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe l'élément résistif étant enrobé dans un matériau isolant pourvu d'une gaine extérieure
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
The present invention provides a resistive material and a method for producing the same wherein a high-temperature pressing step is not required. Provided is a method for producing a resistive material, the resistive material containing insulating powder and a three-dimensional network metal body surrounding the insulating powder, the production method comprising: a step for coating the insulating powder with a metal film to prepare metal-coated powder; a step for mixing the metal-coated powder with an electrically conductive metal powder to obtain a mixed powder; and a step for sintering the mixed powder at a temperature lower than the melting point of the metal film and the melting point of the metal powder.
H01C 17/30 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés à la cuisson
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
The present invention relates to a shunt resistor and a method for manufacturing the shunt resistor. The present invention relates to a current detection device including a shunt resistor. The shunt resistor (1) comprises a resistance element (5) and a pair of electrodes (6, 7) connected to both ends (5a, 5b) of the resistance element (5) in a first direction. The shunt resistor (1) has a projecting portion (11) formed on a side surface (1a), which is parallel to the first direction, of the shunt resistor (1), and a recessed portion (12) formed in a side surface (1b), which is an opposite side of the side surface (1a), of the shunt resistor (1), and extending in the same direction as the projection (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7), and the recessed portion (12) has a side surface (5d) of the resistance element (5) parallel to the first direction.
H01C 7/06 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant présentant des moyens pour réduire au minimum les variations de résistance dépendantes des variations de température
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
The present invention relates to a shunt resistor for current detection. The shunt resistor (1) includes: a resistance element (5) having a plate shape; and electrodes (6, 7) connected to both end surfaces (5a, 5b) of the resistance element (5), wherein the electrodes (6, 7) have cut portions (11, 12), respectively, the cut portions (11, 12) extending parallel to joint portions (8, 9) of the resistance element (5) and the electrodes (6, 7), and each of the cut portions (11, 12) is located at a position where a relationship Y≤0.80X-1.36 holds, where Y is a distance from each joint portion (6, 7) to each cut portion (11, 12), and X is a length of the joint portions (6, 7) in a width direction of the electrodes (6, 7).
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
A current detection device (30) includes a resistance element (5), and a pair of electrodes (6, 7). The current detection device (30) has a projecting portion (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7). The electrodes (6, 7) have first wall portions (66b, 67b) forming a portion of the projecting portion (11), and second wall portions (66a, 67a) forming the portion of the projecting portion (11). The electrodes (6, 7) have detection areas (66, 67) demarcated by the first wall portion (66b, 67b), the second wall portion (66a, 67a), a leading end portion (66c, 67c), and a contact surface (6a, 7a). The electrodes (6, 7) have voltage detecting portions (20, 21). The voltage detecting portions (20, 21) are arranged in the detection areas (66, 67) with a gap between the leading end portions (66c, 67c).
A manufacturing method of a resistor contains: a step of forming a resistor base material by stacking an electrode material, a resistive material, and an electrode material in this order and by bonding the electrode material, the resistive material, and the electrode material by applying pressure in the stacked direction; a step of passing the resistor base material through a die, the die being formed with an opening portion having a dimension smaller than an outer dimension of the resistor base material; and a step of obtaining an individual resistor from the resistor base material passed through the die.
A chip resistor comprises an insulating substrate (component body) on which a resistor is formed, a connection terminal (front electrodes, end face electrodes, and back electrodes) formed at both end portions of the insulating substrate, an under layer formed by electrolytic plating to cover the connection terminal, a barrier layer formed by electrolytic plating to cover the under layer, and an external connection layer which is mainly composed of tin and formed on a surface of the barrier layer, wherein the barrier layer is made of alloy plating mainly composed of nickel and containing 3% to 15% of phosphorus, and the under layer is formed of a copper plated layer that is at least either more malleable or more ductile than the barrier layer.
The mounting area for an electronic component and a resistor for current detection is reduced. A current detection resistor for detecting current includes a plate-like resistive body, and a first electrode and an opposite second electrode which are stacked in a thickness direction of the resistive body and are disposed so as to sandwich the resistive body. The first electrode has a groove portion.
G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriques; Combinaisons structurelles de ces éléments avec ces appareils
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
43.
Chip resistor and method of manufacturing chip resistor
A chip resistor includes: an insulating substrate; a pair of front electrodes; a resistor connecting between both the front electrodes; an undercoat layer provided on the resistor; an overcoat layer provided on the undercoat layer, an auxiliary film provided so as to be over a connecting portion between the front electrode and the resistor at a position away from an end face of the insulating substrate; a pair of end face electrodes; and a pair of external plating layers covering the end face electrodes, the front electrodes, and the auxiliary film, wherein the auxiliary film is formed of a resin material containing metal particles, and a portion of the auxiliary film is sandwiched between the undercoat layer and the overcoat layer.
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
44.
ALLOY FOR RESISTOR AND USE OF RESISTOR ALLOY IN RESISTOR
Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.
A circuit protection element (10) is provided with: a pair of electrode parts (12, 14); an element part (16) provided between the electrode parts (12, 14); a plate body (18) that is disposed along the element part (16) and that comprises an insulation body; and an exterior member (20) that covers the element part (16) and the plate body (18). In this configuration, transmission of heat when melting and cutting the element part (16) because of overcurrent is blocked by the plate body (18). Accordingly, since transmission of heat to the exterior member (20) at the time of being melted and cut is suppressed, deformation of the exterior member (20) caused by heat at the time of being melted and cut can be suppressed. Therefore, a change in the external shape of the circuit protection element (10) can be suppressed.
H01H 85/045 - Construction ou structure générales de fusibles basse tension, c. à d. au-dessous de 1000 V, ou de fusibles pour lesquels la tension applicable n'est pas spécifiée du type cartouche
H01H 85/06 - Eléments fusibles caractérisés par le matériau fusible
H01H 85/10 - Eléments fusibles caractérisés par la configuration ou la forme de l'élément fusible comportant un étranglement pour fusion localisée
A current sensing device including: an insulating resin substrate; a current sensing element arranged in the resin substrate; a current wire provided via an insulating layer with respect to the current sensing element to flow a current through the current sensing element; a plurality of current vias connecting the current sensing element and the current wire through the insulating layer; and a voltage sensing via connected to the current sensing element to measure a voltage drop.
G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriques; Combinaisons structurelles de ces éléments avec ces appareils
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
In the present invention, a shunt resistor 10 comprises a resistor 14, and electrodes 16, 18 joined to the resistor 14 and formed using aluminum as a main component. The shunt resistor 10 also comprises a plated section 30 that covers at least junctions 20, 22 of the resistor 14 and the electrodes 16, 18, and that is formed of a plating of higher specific resistance than the resistor 14.
x6y22O, where x is a number greater than 0 but less than or equal to 2, y is a number greater than 0 but less than or equal to 1, and n is a number greater than or equal to 0.
A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.
H01C 17/242 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour ajuster la valeur de la résistance en supprimant ou en ajoutant du matériau résistif par laser
H01C 1/034 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe le boîtier ou l'enveloppe étant constitué par un revêtement ou un moulage sans gaine extérieure
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
H01C 17/28 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour appliquer les bornes
A resistor contains a resistance body and a pair of electrodes (a first electrode body and a second electrode body), wherein end surfaces of the resistance body are respectively abutted to and bonded to end surfaces of the electrodes (a first electrode body and a second electrode body), the electrodes (a first electrode body and a second electrode body) each includes a main body portion and a leg portion, the leg portion protruding from the main body portion in the mounting surface of the resister, and a length dimension of the resistor is equal to or shorter than 3.2 mm.
The present invention relates to a resistor for high voltages for use in a circuit such as a power supply circuit, and to a method for manufacturing a resistor. A resistor (1) comprises electrodes (3, 4) and a resistive element (10). The resistive element (10) includes a first meandering resistive section (11) and a second meandering resistive section (12), and a trimming resistive section (13) having a trimming groove (20) for adjusting the resistance value.
H01C 17/24 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour ajuster la valeur de la résistance en supprimant ou en ajoutant du matériau résistif
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 7/22 - Elément résistif allongé plié ou courbé, p.ex. sinusoïdal ou en hélice
52.
CHIP-TYPE RESISTOR FOR INTEGRATION IN SUBSTRATE, MODULE HAVING INTEGRATED RESISTOR, METHOD FOR PRODUCING MODULE HAVING INTEGRATED RESISTOR, AND TRIMMING METHOD
This metal plate resistor, which is a chip-type resistor for integration in a substrate, is in plate form and comprises a resistive element, a first electrode which is joined to one end of the resistive element by a first cladding joining part, and a second electrode which is joined to the other end of the resistive element by a second cladding joining part.
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
An object is to provide a shunt resistor module that is reduced in size, can handle a large current, and can accurately detect current. A shunt resistor module of the present invention includes: a shunt resistor that includes a plurality of resistor bodies having a columnar shape, and electrodes that are located at both ends of each of the plurality of resistor bodies; and a circuit board that includes a plurality of through-holes that can house the plurality of resistor bodies, and a plurality of voltage detection terminals that detects a voltage between the electrodes of the shunt resistor that has been inserted into the plurality of through-holes, and each of the plurality of voltage detection terminals is collected near a center of gravity of the shunt resistor.
The present invention provides a temperature sensor which has more easily enhanced strength. This temperature sensor is provided with a resin film, and a titanium metal foil that is bonded to the resin film. The titanium metal foil constitutes a conductive pattern. With respect to one embodiment of the present invention, a surface of the titanium metal foil, the surface facing the resin film, has been subjected to a surface modification treatment. With respect to one embodiment of the present invention, the thickness of the titanium metal foil is within the range of 3 to 10 µm. With respect to one embodiment of the present invention, the resin film contains a thermoplastic resin, and the thickness of the resin film is within the range of 20 to 80 µm.
H01C 7/02 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant à coefficient de température positif
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
A sulfidation detection sensor includes a rectangular parallelepiped insulating substrate, a resistor formed to adhere closely to a surface of the insulating substrate, a sulfidation detection conductor formed to adhere closely to a surface of the resistor, a protective layer that is impermeable to sulfide gas and formed to cover a portion of the sulfidation detection conductor, and a pair of electrode portions formed at both ends of the insulating substrate and connected to the resistor and the sulfidation detection conductor. The sulfidation detection conductor is made of metal having a resistance value less than that of the resistor, and includes an exposed portion exposed to the outside without being covered with the protective layer.
237-δ25237-δ7-δ is added to said composition. As a result, interlayer peeling and cracking can be prevented from occurring due to the sinter behavior of the heat insulation layer approaching the sinter behavior of the sensing layer, and by adopting a sandwiched structure in which the sensing layer is interposed between heat insulation layers, the conservation of electric power is made possible by reducing the amount of heat dissipated from the sensing layer.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
57.
RESISTANCE TYPE OXYGEN GAS SENSOR AND OXYGEN SENSOR DEVICE
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
A chip resistor including: a rectangular parallelepiped insulating substrate; a strip-shaped resistor; a pair of front electrodes formed on a front surface of the resistor at both ends in the longitudinal direction; an insulating protective layer; and a pair of end face electrodes formed at both ends of the insulating substrate in the longitudinal direction, each of which is connected to each end face of the resistor, corresponding one of the front electrodes, and protective film; and a pair of external electrodes, wherein a cross-sectional shape of each of the front electrodes is almost a triangle in which a side of the end face has a maximum height, and a shape of an end face of each of the end face electrodes is almost a square.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
59.
Chip resistor and method for manufacturing chip resistor
Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.
The resistor 5 is a print-formed body including a meandering shaped first region 8 connected to the first front electrode 3 and a second region 9 connected to the first region 8 via a linking portion 10 and connected to the second front electrode 4. The first region 8 is provided with an I-cut shaped first trimming groove 11 and the second region 9 is provided with an L-cut shaped second trimming groove 12, and the side of the second region 9 positioned in the direction toward which a turn portion 12b of the second trimming groove 12 extends is an oblique side 9a that inclines to approach the second front electrode 4 as it approaches the connecting portion 7.
The present invention relates to a current detection device, particularly to a current detection device using a shunt resistor. A current detection device (30) is provided with a resistive body (5) and a pair of electrodes (6, 7). The electrodes (6, 7) have detecting regions (24a, 25a) defined by first slits (16, 17), second slits (26, 27), and contact surfaces (6a, 7a) at least partly contacting the resistive body (5). The electrodes (6, 7) further include voltage detecting portions (20, 21) disposed in the detecting regions (24a, 25a).
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
The objective of the present invention is to provide a sensor element with which it is possible to obtain a wide sensing area, and with which it is possible to obtain a substantially constant sensor sensitivity by suppressing an uneven temperature distribution in the sensing area. A sensor element (1) according to the present invention includes a base body (2), a temperature-sensitive film (3) which is formed over the entire surface of the base body and of which an electrical resistance value changes in accordance with a change in temperature, and wiring members (4, 5) connected to both ends of the temperature-sensitive film, characterized in that: the temperature-sensitive film includes areas of contact with the wiring members, and a pattern extending from the areas of contact toward the center of the base body; and the cross-sectional area of the pattern is formed to be smaller on the area of contact side than at the center of the base body.
G01P 5/12 - Mesure de la vitesse des fluides, p.ex. d'un courant atmosphérique; Mesure de la vitesse de corps, p.ex. navires, aéronefs, par rapport à des fluides en mesurant des variables thermiques en utilisant la variation de la résistance d'un conducteur chauffé
64.
RESISTIVE MATERIAL, METHOD OF MANUFACTURING RESISTIVE MATERIAL, AND RESISTOR FOR DETECTING ELECTRIC CURRENT
H01C 7/13 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant sensibles au courant
H01C 17/02 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés à la fabrication de résistances avec enveloppe ou carter
H01C 17/065 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour déposer en couche le matériau résistif sur un élément de base par des techniques de film épais, p.ex. sérigraphie
65.
Chip resistor and method of manufacturing chip resistor
A chip resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode created on both longitudinal ends of the insulated substrate, and a resistive element making a connection between the first and second front electrodes. The resistive element is formed in a meandering shape with a first region and a second region continuing in series via a jointing section between a pair of connecting portions. Moreover, in the first region, a first trimming groove for rough adjustment is formed to elongate a current path of the resistive element. In the second region, a second trimming groove is formed for fine adjustment extending in a direction angled with respect to a straight line along a direction in which the first trimming groove extends.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
H01C 17/22 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour ajuster la valeur de la résistance
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
The chip-type current fuse is configured to include a fuse element 5 formed between a first front electrode 3 and a second front electrode 4. The fuse element 5 includes: a first linear portion 5a that has an end connected to the first front electrode 3 and extends in a direction toward the second front electrode 4; a second linear portion 5b that has an end connected to the second front electrode 4 and extends in parallel to the first linear portion 5a in a direction toward the first front electrode 3; and an inclined linear portion 5c that links the first linear portion 5a and the second linear portion 5b to each other. The inclined linear portion 5c is connected at an acute angle to each of the first linear portion 5a and the second linear portion 5b.
H01H 37/76 - Interrupteurs dans lesquels uniquement le mouvement d'ouverture ou uniquement le mouvement de fermeture d'un contact est effectué par chauffage ou refroidissement Élément de contact actionné par fusion d'une matière fusible, actionné par combustion d'une matière combustible ou par explosion d'une matière explosive
A sensor device according to the present invention includes: a sensor element including a temperature-sensitive resistor; and a protective cover that protects the sensor element, wherein the sensor element has a shape extending long along one direction, and the protective cover surrounds a periphery of the sensor element with a plurality of support pillars extending obliquely with respect to a longitudinal direction of the sensor element. It is preferable that the plurality of support pillars intersect in a lattice-like manner.
G01K 7/24 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance non linéaire, p.ex. une thermistance dans un circuit spécialement adapté, p.ex. un circuit en pont
G01K 1/08 - Dispositifs de protection, p.ex. étuis
A resistor comprising a resistor body and electrodes provided on the resistor body, wherein the resistor body has an oxide film on the front surface thereof.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 17/02 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés à la fabrication de résistances avec enveloppe ou carter
69.
GAS SENSOR AND METHOD FOR PRODUCING ALKALINE EARTH FERRITE
The gas sensor is provided with: a base material; a first electrode and a second electrode arranged on the base material; and a gas detection member connected to the first electrode and the second electrode, wherein the gas detection member contains flaky particles of alkaline earth ferrite.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
Provided is a mounting structure for a chip component having high heat-shock resistance. In the mounting structure for a chip resistor 1 according to the present invention, the separation distance L1 between a pair of rear-surface electrodes 3 formed on an insulation substrate 2 of a chip resistor 20 is set lower than the separation distance L2 between a pair of lands 31 provided to a circuit substrate 30. Thick-walled sections (first electrode sections 3a) are formed in the rear-surface electrodes 3. External electrodes 9 bonded to the rear-surface electrodes 3 are connected to the corresponding lands 31 via solder 32 in a state in which the tops of the thick-walled sections are positioned directly above inner-side ends of the lands 31.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 1/148 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes enveloppant ou entourant l'élément résistif
An object is to provide a flow sensing device improved in weather resistance and insect resistance. A flow sensing device includes: a cover member; a cap member disposed below the cover member; a foreign-body intrusion prevention net surrounding a space between the cover member and the cap member; a light emitting element disposed in a housing space surrounded by the cover member, the cap member, and the foreign-body intrusion prevention net; and a sensing element disposed inside the foreign-body intrusion prevention net in the housing space, the sensing element including a thermosensitive resistive element.
G01F 1/69 - Dispositions de structure; Montage des éléments, p.ex. relativement à l'écoulement de fluide utilisant un élément de chauffage, de refroidissement ou de détection d'un type particulier du type à résistance
G01F 15/12 - Dispositions pour le nettoyage; Filtres
G01F 15/18 - Supports ou moyens de raccordement pour les compteurs
72.
LOAD SENSOR ELEMENT AND MANUFACTURING METHOD OF LOAD SENSOR ELEMENT
A load sensor element includes a substrate made of a ceramic material; an inorganic layer having a surface configured to receive a load, the inorganic layer covers a portion of the substrate; a thin-layer resistance body whose resistance value changes in accordance with the load received by the inorganic layer, the thin-layer resistance body having a main body portion and a pair of end portions, the main body portion mounted on the covered portion of the substrate and sandwiched between the substrate and the inorganic layer, the pair of end portions mounted on an exposed portion of the substrate, and the exposed portion free of the inorganic layer; and a pair of electrodes electrically connected to the pair of end portions of the thin-layer resistance body and separated away from the inorganic layer and on one side of the substrate.
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
Provided is a chip resistor having excellent corrosion resistance. A chip resistor 1 according to the present invention is provided with: a rectangular parallelopiped insulating substrate 2; a pair of front electrodes 3 formed on opposite ends of the front surface of the insulating substrate 2; a pair of back electrodes 4 formed on opposite ends of the back surface of the insulating substrate 2; a resistor 5 that straddles over the pair of front electrodes; a first insulating layer 6 that is formed from a glass material and that covers the resistor 5; a second insulating layer 7 that is formed from a resin material and that is laid on the first insulating layer 6; a pair of auxiliary electrode layers 8 that are each formed from a highly sulfur-resistant material and that are laid on the front electrodes 3; a pair of end-face electrodes 9 that extend on opposite end faces of the insulating substrate 2 and that enable electrical conduction between the auxiliary electrode layers 8 and the back electrodes 4; and outer plated layers 10 that cover the auxiliary electrode layers 8, the end-face electrodes 9, and the back electrodes 4. The first insulating layer 6 has projection parts 6a that are not covered with the second insulating layer 7 and that overlap the upper surfaces of the front electrodes 3. The auxiliary electrode layers 8 are formed so as to cover the front electrodes 3 and the projection parts 6a and to reach the upper surface of the second insulating layer 7.
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
The purpose of the present invention is to provide a sensor device with which it is possible to highly accurately perform flow rate sensing around 360° in the radial direction with respect to a first sensor device provided with a resistance element for flow rate sensing. The sensor device (1) according to the present invention is characterized in having a substrate (2), a first sensor element (3) provided with a resistance element for flow rate sensing, and a second sensor element (4) provided with a resistance element for temperature compensation, the first sensor element and the second sensor element being supported via lead wires (6, 8) respectively so as to be set away from the surface (2a) of the substrate, and the first sensor element being disposed at a position higher than that of the second sensor element.
G01P 5/12 - Mesure de la vitesse des fluides, p.ex. d'un courant atmosphérique; Mesure de la vitesse de corps, p.ex. navires, aéronefs, par rapport à des fluides en mesurant des variables thermiques en utilisant la variation de la résistance d'un conducteur chauffé
Provided is a chip component having high heat shock resistance. A chip resistor 1 according to the present invention comprises: a cuboidal insulating substrate 2; a pair of rear surface electrodes 3 provided to both longitudinal direction ends of the rear surface of the insulating substrate 2; a pair of front surface electrodes 4 provided to both longitudinal direction ends of the front surface of the insulating substrate 2; a resistor 5 provided between the pair of front surface electrodes 4; and a pair of end surface electrodes 6 provided in a cross-sectional U shape to both longitudinal direction end surfaces of the insulating substrate 2 so as to bridge the gap between the rear surface electrodes 3 and the front surface electrodes 4, wherein the rear surface electrodes 3 are formed by a first electrode part 3a positioned on the inner side separated from the end surface of the insulating substrate 2, and two second electrode parts 3b arranged in the widthwise direction of the insulating substrate 2 across a cutout part 3c present between the end surface of the insulating substrate 2 and the first electrode part 3a, and the maximum height of the first electrode part 3a is set to be higher than the maximum height of the second electrode part 3b.
H01C 1/016 - Montage; Support avec compensation de la dilatation ou de la contraction de la résistance
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
b do not exist at the base of corner portions of the rectangular glass protective film 4 so as to eliminate level differences generating due to thicknesses of the electrodes. Use of such a structure may resolve the problem that when printing glass paste individually over chip elements of a chip resistor on a large substrate from which multiple chips will be obtained, corner portions of the glass protective film bleed (flow) to the outer side (dividing grooves).
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 17/00 - Appareils ou procédés spécialement adaptés à la fabrication de résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
G01N 17/00 - Recherche de la résistance des matériaux aux intempéries, à la corrosion ou à la lumière
78.
CHIP RESISTOR AND METHOD FOR PRODUCING CHIP RESISTOR
The present invention provides a chip resistor which is suitable for the achievement of electric power improvement. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2 that has a cuboidal shape; a pair of front electrodes 3 that are provided on both end parts of the front surface of the insulating substrate 2 in the longitudinal direction; two resistors 4 that are connected in parallel between the pair of front electrodes 3; a precoat layer 5 that is formed on the resistors 4; a pair of back electrodes 6 that are provided on both end parts of the back surface of the insulating substrate 2 in the longitudinal direction; a pair of end face electrodes 7 that are provided on both end faces of the insulating substrate 2 in the longitudinal direction; and a protective coat layer 8 that is formed so as to cover the precoat layer 5. Each of the resistors 4 has an incision part 10 at a position where the resistor 4 is connected to a front electrode 3; and a trimming groove (trimming mark) 9 is linearly formed in the inter-electrode direction starting from the incision part 10.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 17/242 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour ajuster la valeur de la résistance en supprimant ou en ajoutant du matériau résistif par laser
79.
Production method for sulfidation detection sensor
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
The purpose of the present invention is to provide: a shunt resistor that is compact, is compatible with a large current, and can detect the current with good precision; and a mounting structure for the shunt resistor. A shunt resistor (1) of the present invention is mounted to a printed wiring board (3), and is characterized in that a plurality of rod-shaped resistive elements (4), which serve as current paths, are integrally connected in a substantially parallel form. A mounting structure of the shunt resistor of the present invention mounts the shunt resistor to the printed wiring board, wherein: the printed wiring board (3) comprises a board body (6) having an opposing front surface (6a) and a rear surface (6b), a front surface electrode (7) formed on the front surface, a rear surface electrode (8) formed on the rear surface, and a plurality of through-holes that pass through the board body from the front surface electrode to the rear surface electrode; and each rod-shaped resistive element of the shunt resistor is inserted through each through-hole, and the shunt resistor is supported by the printed wiring board.
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
The present invention simplifies the shape of a shunt resistor, and facilitates securing the shunt resistor to a busbar or the like and connecting a voltage detection circuit. A shunt resistor comprising a plurality of resistive elements, and a first current terminal plate and a second current terminal plate, each being connected to an end of the plurality of resistive elements, and further comprising a resin molded body that has a plurality of through-holes through which the plurality of resistive elements is inserted, and secures the plurality of resistors to the first current terminal plate and the second current terminal plate.
H01C 1/02 - Boîtiers; Enveloppes; Enrobage; Remplissage de boîtier ou d'enveloppe
H01C 1/148 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes enveloppant ou entourant l'élément résistif
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
82.
Resistive material, resistor, and manufacturing method of resistive material
The resistive material for sensing current contains: metal particles selected from a group consisting of nichrome, copper-manganese, and copper-nickel; insulating particles selected from a group consisting of alumina, aluminum nitride, silicon nitride, and zirconia; and titanium oxide.
C22C 29/12 - Alliages à base de carbures, oxydes, borures, nitrures ou siliciures, p.ex. cermets, ou d'autres composés métalliques, p.ex. oxynitrures, sulfures à base d'oxydes
B22F 1/12 - Poudres métalliques contenant des particules non métalliques
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 17/065 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour déposer en couche le matériau résistif sur un élément de base par des techniques de film épais, p.ex. sérigraphie
b of the resistive element 11, in which the second electrode block 13, 113 is a block body including an electrode portion 14 connected to the resistive element 11 and an extension portion 15, 115 extending downward from a side surface of the electrode portion 14.
H01C 7/13 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant sensibles au courant
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
The present invention pertains to a shunt resistor and a shunt resistance device. The shunt resistor (1) comprises an electrode member (10). The electrode member (10) comprises: a contact portion making contact with a resistive body (5); and a slit (20) formed in the contact portion (10a).
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
85.
JUMPER ELEMENT, SHUNT RESISTOR DEVICE AND METHOD FOR ADJUSTING CHARATERISTICS OF SHUNT RESISTOR DEVICE FOR CURRENT DETECTION
The present invention relates to: a jumper element; a shunt resistor device; and a method for adjusting characteristics of a shunt resistor device for current detection. According to the present invention, a jumper element (10) for constituting a shunt resistor device for current detection is composed of a conductive metal material. This jumper element (10) is provided with: a main body part (11) which is able to be connected to a resistor (5) that constitutes a part of a shunt resistor device; and a projected part (12) that is formed on a lateral part of the main body part (11). The projected part (12) is positioned so as not to overlap with the resistor (5).
H01C 1/142 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant constitués par un revêtement appliqué sur l'élément résistif
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
86.
Sulfurization detection resistor and manufacturing method therefor
A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements. The sulfurization detecting conductors have their sulfurization detecting portions exposed out of the protective film, and different timings are set for these sulfurization detecting portions respectively to become disconnected depending on a cumulative amount of sulfurization.
G01R 27/08 - Mesure de la résistance par mesure à la fois de la tension et de l'intensité
G01N 27/04 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance
H01C 17/22 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour ajuster la valeur de la résistance
H01C 17/28 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour appliquer les bornes
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
87.
Terminal connecting structure and electronic component
A terminal connecting structure is provided with each of the electrodes provided on the element forming the electronic component; and the terminals respectively having the connecting portions arranged along the electrodes respectively. In addition, the terminal connecting structure is provided with clearance forming portions configured to respectively form the respective clearances between the electrodes and the connecting portions respectively; and the connecting materials respectively provided in the clearances, the connecting material being configured to electrically connect the connecting portions and the electrodes respectively.
According to the present invention, a current detecting resistor such as a shunt resistor achieves a low resistivity while maintaining a low TCR, and achieves a small thermoelectromotive force against copper. A resistor alloy used in a shunt resistor for current detection comprises 4.5-5.5 mass% of manganese, 0.05-0.30 mass% of silicon, and 0.10-0.30 mass% of iron, with the balance being copper, and has a resistivity of 15-25 μΩ•cm.
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
Provided is a current sensing device including: a laminate having a plurality of insulating layers laminated therein; a current sensing element provided in an inner layer of the laminate; a current wire configured to flow current to the current sensing element, the current wire being provided with respect to the current sensing element via an interlayer insulating layer; a plurality of current vias configured to connect the current sensing element and the current wire so as to penetrate through the interlayer insulating layer; and a voltage sensing via configured to obtain a voltage drop in the current sensing element, the voltage sensing via being electrically connected to the current sensing element.
G01R 1/20 - Modifications des éléments électriques fondamentaux en vue de leur utilisation dans des appareils de mesures électriques; Combinaisons structurelles de ces éléments avec ces appareils
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
Particularly, it is an object to provide a circuit substrate that can reduce a field intensity near an electrode having a high potential. A circuit substrate of the present invention includes an insulated substrate, a thin-film resistive element, and electrodes electrically connected to both sides of the thin-film resistive element, the thin-film resistive element and the electrodes being disposed on a surface of the insulated substrate. The circuit substrate is characterized in that the thin-film resistive element has a pattern in which a resistance wire is repeatedly folded back, and a dummy wire for reducing a field intensity is provided on a high-potential electrode side.
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
The present invention provides a resistance alloy which is capable of reducing the TCR of a shunt resistor that is used for a current detection device that is capable of detecting a large current. A copper-manganese system resistance alloy which is used in a shunt resistor, said resistance alloy additionally containing tin and nickel, while having a TCR of -36 × 10-6/K or less at 100°C with a reference temperature of 25°C.
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
92.
FLOW RATE SENSOR DEVICE AND FLOW RATE SENSOR DEVICE EQUIPPED WITH COVER
The visibility of light is improved. A flow rate sensor device includes a substrate, sensor elements electrically connected to the substrate, light emitting elements positioned in a rear part of the sensor elements and disposed on a surface of the substrate, and light-transmissive cases internally accommodating the light emitting elements between the light-transmissive cases and the substrate. The light-transmissive cases have light diffusion members projecting from ceiling sections toward the light emitting elements, the light diffusion members have light incident surfaces facing the light emitting elements and wall surfaces connecting the light incident surfaces and the ceiling sections, and at least a part of the wall surfaces has a tilting surface having a dimension between the opposing wall surfaces, the dimension gradually increasing from a side close to the light incident surface toward the ceiling section.
G01P 5/26 - Mesure de la vitesse des fluides, p.ex. d'un courant atmosphérique; Mesure de la vitesse de corps, p.ex. navires, aéronefs, par rapport à des fluides en mesurant l'influence directe du courant de fluide sur les propriétés d'une onde optique de détection
G01P 5/20 - Mesure de la vitesse des fluides, p.ex. d'un courant atmosphérique; Mesure de la vitesse de corps, p.ex. navires, aéronefs, par rapport à des fluides en mesurant le temps mis par le fluide à parcourir une distance déterminée en utilisant des particules entraînées par un courant de fluide
G01F 1/66 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en mesurant la fréquence, le déphasage, le temps de propagation d'ondes électromagnétiques ou d'autres types d'ondes, p.ex. en utilisant des débitmètres à ultrasons
It is an object to provide a flow rate sensor device having improved sensor responsiveness compared with the prior art. The present invention is a flow rate sensor device including a sensor element that detects a flow rate, wherein a sensor unit on which the sensor element is mounted and a drive substrate including a drive control circuit are connected through a connection portion narrower than a width of the drive substrate. Thus, a heat source in the drive substrate and a heat source in the sensor unit can be separated by the connection portion that is thin in width, and the thermal influence from the drive substrate to the sensor unit can be suppressed. Therefore, good sensor responsiveness can be maintained.
G01F 1/69 - Dispositions de structure; Montage des éléments, p.ex. relativement à l'écoulement de fluide utilisant un élément de chauffage, de refroidissement ou de détection d'un type particulier du type à résistance
G01F 1/698 - Circuits de réaction ou de rééquilibrage, p.ex. débitmètres auto-chauffés à température constante
An oxygen sensor is provided in which an insulative coating using an exterior resin material made of insulative resin is applied to a self-heating oxygen sensor element made of a ceramic sintered body housed in a case, and in which waterproof cloths with air permeability are attached using resin adhesives so as to cover openings that connect to air holes on end parts of the case. This allows provision of a gas sensor for use both in air and in liquid having insulating property, waterproof property, and thermal safety.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
G01N 27/14 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps chauffé électriquement dépendant de variations de température
It is an object to provide a flow rate sensor device having improved sensor responsiveness compared with the prior art. The present invention is a flow rate sensor device including a sensor element that detects a flow rate; a unit body including a sensor unit in which the sensor element is mounted, and a case accommodating the unit body, wherein the sensor unit is supported away from a bottom surface of the case. In this way, the sensor unit is supported to float upward from the bottom surface of the case, and a space is provided between the sensor unit and the bottom surface. Therefore, heat caused in the sensor unit can be separated from outside, and good sensor responsiveness can be maintained.
The purpose of the present invention is to provide a flow rate sensor element that has excellent omnidirectional sensor sensitivity. A flow rate sensor element (1) of the present invention is characterized by being equipped with a spherical substrate (2), and a temperature-sensitive film pattern (3) which has been formed on the entire surface of the substrate and has an electrical resistance value that changes as the temperature changes. In the present invention, the temperature-sensitive film pattern is preferably formed by trimming a temperature-sensitive film that has been formed on the surface of the substrate. In this flow rate sensor element, the temperature-sensitive film pattern can be arranged over the entire surface of the spherical substrate, thus making it possible to obtain a constant sensor sensitivity irrespective of the fluid direction and to improve the flow rate detection accuracy.
G01P 5/12 - Mesure de la vitesse des fluides, p.ex. d'un courant atmosphérique; Mesure de la vitesse de corps, p.ex. navires, aéronefs, par rapport à des fluides en mesurant des variables thermiques en utilisant la variation de la résistance d'un conducteur chauffé
97.
Noise-preventing resistor and method of manufacturing same
A noise-preventing resistor has a structure in which a resistance wire is wound around an outer circumferential surface of a core, cap terminals are attached to either end part of the core, and part of an insulative coating (resin coating) covering the resistance wire and part of the resistance wire positioned underneath the insulative coating are cut, forming peeled regions exposing the resistance wire. As a result, conduction between the cap terminals and the resistance wire in the noise-preventing resistor is ensured.
H01C 3/20 - Résistances métalliques fixes en fil ou en ruban, p.ex. bobinées, tressées ou en forme de grille l'élément résistif étant formé de plusieurs spires ou boucles enroulées en spirale, en hélice ou en forme de tore enroulées sur un élément de base cylindrique ou prismatique
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 17/28 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour appliquer les bornes
98.
RESIN COMPOSITION FOR GENERATING ALLYLPHENOL-MALEIMIDE COPOLYMER FOR ELECTRONIC COMPONENT PROTECTIVE FILM, AND ELECTRONIC COMPONENT PROTECTIVE FILM COMPRISING THIS COPOLYMER
OSAKA RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
KOA CORPORATION (Japon)
Inventeur(s)
Ohtsuka, Keiko
Yonekawa, Morio
Kimura, Hajime
Yoshioka, Ken
Kanamaru, Nobuhiro
Suwa, Masaki
Machida, Kazumi
Abrégé
This invention provides a resin composition for preparing an allylphenol-maleimide copolymer used for a protective film for an electronic component including: (A) an allyl group-containing phenol compound having a rigid structure; (B) an N-aromatic maleimide group-containing compound having a rigid structure; and (C) an N-aliphatic maleimide group-containing compound having a flexible structure.
C09D 125/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
C09D 145/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés ne possédant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocycliqu; Compositions de revêtement à base de dérivés de tels polymères
C08F 234/00 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un hétérocycle
C08F 212/34 - Monomères contenant plusieurs radicaux aliphatiques non saturés
C09D 7/61 - Adjuvants non macromoléculaires inorganiques
H01B 3/30 - Isolateurs ou corps isolants caractérisés par le matériau isolant; Emploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques cires
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
H01C 7/00 - Résistances fixes constituées par une ou plusieurs couches ou revêtements; Résistances fixes constituées de matériau conducteur en poudre ou de matériau semi-conducteur en poudre avec ou sans matériau isolant
This resistor comprises a plurality of resistor components 12A, 12B, 12C, 12D each of which comprises electrodes 24, 26 extending from both sides of a resistor 22 and is thus formed in a plate shape, the plurality of resistor components 12A, 12B, 12C, 12D being stacked on top of each other in a thickness direction. The resistor comprises protrusions 20A, 20B, 20C, 20D, 20E which are provided between the electrodes 24, 26 of the resistor components 12A, 12B, 12C, 12D proximate to each other, form gaps 50 between the resistors 22 of the resistor components, electrically connect the electrodes of the resistor components, and connect the resistor components in parallel. The electrodes 24, 26 of the resistor components are provided with detecting portions 60 for detecting voltage which are disposed in positions closer to the resistors 22 than current-flowing energizing portions.
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
The present invention pertains to a shunt resistor for detecting a current, and particularly pertains to a voltage detection terminal of a shunt resistor. This shunt resistor (1) comprises a resistive body (3), a first electrode (5A) and a second electrode (5B) connected to both sides of the resistive body (3), and a first voltage detection terminal (6A) and a second voltage detection terminal (6B) electrically connected to the first electrode (5A) and the second electrode (5B), respectively. The distance (S) from the center line (CL) of the resistive body (3) to the first voltage detection terminal (6A) and the second voltage detection terminal (6B) is within the range of 21 to 29% of the width of the resistive body (3).
H01C 1/144 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes ou points de prise étant soudés ou brasés
G01R 15/00 - MESURE DES VARIABLES ÉLECTRIQUES; MESURE DES VARIABLES MAGNÉTIQUES - Détails des dispositions pour procéder aux mesures des types prévus dans les groupes , ou
