Devices, methods and techniques related to the suppression of electrical transients are disclosed. In one example aspect, an electrical transient protection device includes a sensor configured to monitor power transmission on a transmission line of a power system, a controller configured to generate a control signal in response to a detection of one or more electrical transients by the sensor, and a controller transient suppression unit comprising at least a switch that exhibits a changeable impedance. The controllable transient suppression unit configured to impose a load to the power system. The load has a substantially same impedance as a characteristic impedance associated with a part of the power system.
Methods, devices and systems for ultra-high dose radiotherapy are described that rely in-part on active switching control of a photoconductive switch when the accelerator is accelerating charged particles to produce output radiation at desired dose rates. One example method for producing output radiation in a flash radiotherapy system includes receiving, at a particle accelerator, a charged particle beam, where the particle accelerator system also includes a photoconductive switch coupled to the particle accelerator. The photoconductive switch can operate in a linear mode and includes a doped crystalline material that receives a voltage to establish an electric field across the crystalline material. The method includes producing a plurality of voltage pulses by the photoconductive switch in response to receiving light incident on the doped crystalline material, and accelerating the charged particles by the particle accelerator based on the plurality of voltage pulses to produce the output radiation beams for flash radiotherapy.
Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.
Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.
G03G 5/04 - Couches photoconductrices; Couches de génération de charges ou couches de transport de charges; Additifs à cet effet; Liants à cet effet
H01L 31/09 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H01L 31/173 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface formés dans, ou sur un substrat commun
H03K 17/78 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs opto-électroniques, c. à d. des dispositifs émetteurs de lumière et des dispositifs photo-électriques couplés électriquement ou optiquement
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
Methods, devices and systems for ultra-high dose radiotherapy are disclosed. The described techniques rely in-part on active switching control of a photoconductive switch during the time the accelerator is accelerating charged particles to produce the output radiation at the desired dose rates. One radiotherapy system includes a particle accelerator configured to receive charged particles from a pulsed source. The particle accelerator includes a pipe configured to allow the charged particles to pass through as a beam, a magnetic core positioned proximate to the pipe and coupled to the pulsed source, and at least one multilayer insulator positioned adjacent to the pipe and the magnetic core. The system also includes a photoconductive switch coupled to the particle accelerator and configured to supply the particle accelerator with a plurality of voltage pulses.
H05H 7/00 - TECHNIQUE DU PLASMA; PRODUCTION DE PARTICULES ÉLECTRIQUEMENT CHARGÉES ACCÉLÉRÉES OU DE NEUTRONS; PRODUCTION OU ACCÉLÉRATION DE FAISCEAUX MOLÉCULAIRES OU ATOMIQUES NEUTRES - Détails des dispositifs des types couverts par les groupes
Methods, devices and systems for ultra-high dose radiotherapy are disclosed. The described techniques rely in-part on active switching control of a photoconductive switch during the time the accelerator is accelerating charged particles to produce the output radiation at the desired dose rates. One radiotherapy system includes a particle accelerator configured to receive charged particles from a pulsed source. The particle accelerator includes a pipe configured to allow the charged particles to pass through as a beam, a magnetic core positioned proximate to the pipe and coupled to the pulsed source, and at least one multilayer insulator positioned adjacent to the pipe and the magnetic core. The system also includes a photoconductive switch coupled to the particle accelerator and configured to supply the particle accelerator with a plurality of voltage pulses.
Methods, devices and systems for ultra-high dose radiotherapy are disclosed. The described techniques rely in-part on active switching control of a photoconductive switch during the time the accelerator is accelerating charged particles to produce the output radiation at the desired dose rates. One flash radiotherapy system includes an induction accelerator, and a controllable switch coupled to the induction accelerator. The switch is operable to produce a plurality of voltage pulses to drive the induction accelerator. The radiotherapy system also includes a radiation measurement device to measure output radiation produced by the radiotherapy system and provide feedback to the controllable switch. The controllable switch is operable to, based on the received feedback, modify an amplitude, shape, spacing, number or width of the voltage pulses that are supplied to the particle accelerator to deliver the desired output radiation.
Methods, devices and systems for ultra-high dose radiotherapy are disclosed. The described techniques rely in-part on active switching control of a photoconductive switch during the time the accelerator is accelerating charged particles to produce the output radiation at the desired dose rates. One flash radiotherapy system includes an induction accelerator, and a controllable switch coupled to the induction accelerator. The switch is operable to produce a plurality of voltage pulses to drive the induction accelerator. The radiotherapy system also includes a radiation measurement device to measure output radiation produced by the radiotherapy system and provide feedback to the controllable switch. The controllable switch is operable to, based on the received feedback, modify an amplitude, shape, spacing, number or width of the voltage pulses that are supplied to the particle accelerator to deliver the desired output radiation.
Devices, methods and techniques are disclosed to interrupt a fault current in a high-voltage direct-current circuit. In one example aspect, a device includes a mechanical switch including a pair of contacts configured to be positioned apart upon activation of the circuit breaker, and a photoconductive component connected in parallel with the mechanical switch. The photoconductive component is configured to establish a current upon activation of the circuit breaker. The photoconductive component comprises a crystalline material positioned to receive a pulsed light signal from a laser light source, and a pair of electrodes coupled to the crystalline material and configured to allow an electric field to be established across the crystalline material to generate the current.
H01L 31/16 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses
H01H 89/00 - Combinaisons de plusieurs types d'interrupteurs électriques, de relais, de sélecteurs et de dispositifs de protection d'urgence, non couvertes par un des autres groupes principaux de la présente sous-classe
10.
Disinfection system with high throughput and low power requirements
Devices, methods and techniques are disclosed to perform high confidence sterilization of indoor air with low power requirements. In one example aspect, a sterilization device includes a power source, an energy storage coupled to the power source and configured to store electric charges, a set of electrodes arranged in a specified geometry to have a fixed characteristic impedance, and a switch positioned between the energy storage and the set of electrodes. The switch is configured to operate to establish a pulsed electric field on the set of electrodes.
F24F 8/192 - Traitement, p.ex. purification, de l'air fourni aux locaux de résidence ou de travail des êtres humains autrement que par chauffage, refroidissement, humidification ou séchage par séparation, p.ex. par filtrage par des moyens électriques, p.ex. en appliquant des champs électrostatiques ou de la haute tension
Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.
Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.
H01L 31/173 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface formés dans, ou sur un substrat commun
G03G 5/04 - Couches photoconductrices; Couches de génération de charges ou couches de transport de charges; Additifs à cet effet; Liants à cet effet
H01L 31/09 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H03K 17/78 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs opto-électroniques, c. à d. des dispositifs émetteurs de lumière et des dispositifs photo-électriques couplés électriquement ou optiquement
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
13.
Low temperature, photonically augmented electron source system
An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (˜500 ° C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.
H01J 3/36 - Dispositifs de commande du rayon ou du faisceau après que ceux-ci aient passé par le système de déviation principal, p.ex. pour la post-accélération ou la post-concentration
Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.
brevets
