According to various aspects a detection device (100) may include: a processing circuit (102) configured to: receive a detection signal (106) representative of a receive signal (108) detected at the detection device (100), wherein the receive signal (108) is associated with a corresponding predefined transmit signal (122) and/or is associated with one or more expected signal features; generate a differentiation signal (110) representative of a rate of change of a signal level of the detection signal (106) over time; determine time points (112) corresponding to a change of a sign of the differentiation signal (110); and encode the determined time points (112) to generate an output signal (106) representative of one or more characteristic properties of the receive signal (108) detected at the detection device (100).
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/487 - Extraction des signaux d'écho désirés
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
2.
LAMP BASE, LED MODULE COMPRISING THE LAMP BASE, AND METHOD FOR PRODUCING THE LAMP BASE
A lamp base (10) for an exchangeable LED module comprises: a mounting and holding portion (1) for mounting in a housing of a headlight and for holding an electronic assembly comprising at least one LED, the mounting and holding portion extending along a first axis (100); a connector portion (5) for connecting to an external coupling which can provide a power supply source, the connector portion extending along a second axis (200); and at least one contact line, the first end of which extends along the first axis (100) in the mounting and holding portion (1) in order to be able to be connected to the electronic assembly after the electronic assembly has been installed, and the second end of which extends along the second axis (200) in the connector portion (5) in order to be connected there to a coupling-side contact terminal in the case of a closed plug connection, so that the electronic assembly is supplied with electrical power. The first axis (100) and the second axis (200) enclose an angle with one another. The at least one contact line comprises a first contact pin (41, 42) and a second contact pin (71, 72) different from the first contact pin (41, 42), the first contact pin (41, 42) forming the first end and the second contact pin (71, 72) forming the second end, and the two contact pins (41, 42; 71, 72) being electrically connected to one another.
F21S 43/19 - Fixation des sources lumineuses ou des supports de sources lumineuses
F21S 45/48 - Refroidissement passif, p.ex. en utilisant des ailettes, des éléments thermiquement conducteurs ou des ouvertures avec des moyens pour conduire la chaleur de l’intérieur vers l’extérieur des dispositifs d’éclairage, p.ex. avec des ailettes situées sur la surface extérieure du dispositif d’éclairage
F21K 9/232 - Sources lumineuses rétrocompatibles pour dispositifs d’éclairage avec un seul culot pour chaque source lumineuse, p.ex. pour le remplacement de lampes à incandescence avec un culot à baïonnette ou à vis spécialement adaptées à la génération de lumière essentiellement omnidirectionnelle, p.ex. avec une ampoule en verre
In an embodiment a LIDAR system includes a light emission system having a light deflection device configured to receive polarized light and to deflect the received light towards a first direction in accordance with a polarization of the received light and an optical arrangement configured to absorb or reflect a second portion of the light deflected by the light deflection device travelling in a second direction based on a polarization of the second portion of the deflected light.
G01S 7/499 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant des effets de polarisation
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
4.
IMPROVEMENTS IN LIGHT DETECTION WITH SEMICONDUCTOR PHOTODIODES
An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/109 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à hétérojonction
H01L 31/118 - Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire du type détecteurs à barrière de surface ou à jonction PN superficielle, p.ex. détecteurs de particules alpha à barrière de surface
5.
OPTICAL DEVICE FOR DISINFECTING UPPER AIR LAYERS IN A ROOM
The invention relates to an optical device (10) for disinfecting upper air layers in a room, the optical device comprising: - a light source unit (120), comprising a light source (150) and a light-emitting surface (100), which is designed to emit radiation (300) in a UV wavelength range; - a first reflector, which is designed to be arranged at a first distance from the light source unit and to receive the radiation (300) emitted by the light source unit (120) and to reflect the radiation into the room in a first direction with a collimating effect and small far-field angle; - a second reflector, which is designed to be arranged in the room at a second distance from the first reflector and at a position opposite the first reflector and to receive the radiation (300) reflected by the first reflector and to reflect the radiation in a second direction such that a sensor unit can directly or indirectly receive the radiation reflected by the second reflector; - the sensor unit, which is designed to detect the radiation reflected by the second reflector; and a control unit connected to the sensor unit and the light source unit, which control unit is designed, depending on the particular detected radiation, to output a signal which describes the state of the optical device or an impairment of the protection of people from the emitted and/or reflected radiation.
F21V 23/04 - Agencement des éléments du circuit électrique dans ou sur les dispositifs d’éclairage les éléments étant des interrupteurs
F24F 8/22 - Traitement, p.ex. purification, de l'air fourni aux locaux de résidence ou de travail des êtres humains autrement que par chauffage, refroidissement, humidification ou séchage par stérilisation utilisant de la lumière ultraviolette
A device for sterilising a fluid flowing therethrough by comprises a container having an inlet for receiving the fluid and an outlet for discharging the fluid, a variable or adjustable irradiation zone for irradiating the fluid with UV radiation. The irradiation zone including a gap which extends between two oppositely arranged walls. The distance between the walls, and thus the gap size of the gap, can be changed by at least one wall being movable. For example, the wall is a wall of a displaceable body that is located inside the container or projecting into the container. By adjusting the distance between the walls in the region of the gap, and thus the layer thickness of the fluid flowing through the gap, the efficiency of the operation of the device is optimised with different scattering and absorption properties of the fluid.
The present invention relates to an LED backlighting system comprising a substrate, an optoelectronic semiconductor chip assembly, a reflector and a diffuser element. The optoelectronic semiconductor chip assembly is disposed on an upper side of the substrate. The reflector has a through-hole that extends between a lower opening on an underside of the reflector and an upper opening on an upper side of the reflector. The reflector is disposed on the upper side of the substrate so that the underside of the reflector is facing the upper side of the substrate. The optoelectronic semiconductor chip assembly is disposed in the through-hole of the reflector. The diffuser element has an upper side and an underside. The diffuser element is disposed above the upper side of the reflector so that the underside of the diffuser element is facing the upper side of the reflector.
In an embodiment a lamp includes a lamp body extending in a first direction along a longitudinal axis between a proximal base portion and a light-reflective distal front surface, the distal front surface extending transverse to the longitudinal axis and having an outer edge and a linear array of a plurality of solid-state light sources arranged distally of the distal front surface of the lamp body, the linear array of solid-state light sources extending in a second direction transverse to the longitudinal axis and having a length in the second direction longer than a width across the second direction, wherein the light-reflective distal front surface tapers from the outer edge towards the linear array of solid-state light sources and comprises two opposed surface portions each extending from the outer edge to a linear inner edge line.
F21K 9/68 - Agencements optiques intégrés dans la source lumineuse, p.ex. pour améliorer l’indice de rendu des couleurs ou l’extraction de lumière - Détails des réflecteurs faisant partie de la source lumineuse
F21K 9/232 - Sources lumineuses rétrocompatibles pour dispositifs d’éclairage avec un seul culot pour chaque source lumineuse, p.ex. pour le remplacement de lampes à incandescence avec un culot à baïonnette ou à vis spécialement adaptées à la génération de lumière essentiellement omnidirectionnelle, p.ex. avec une ampoule en verre
F21S 43/19 - Fixation des sources lumineuses ou des supports de sources lumineuses
F21K 9/235 - Sources lumineuses rétrocompatibles pour dispositifs d’éclairage avec un seul culot pour chaque source lumineuse, p.ex. pour le remplacement de lampes à incandescence avec un culot à baïonnette ou à vis - Détails des socles ou des calottes, c. à d. des parties qui relient la source lumineuse à un culot; Agencement des composants à l’intérieur des socles ou des calottes
09 - Appareils et instruments scientifiques et électriques
Produits et services
(1) Electric and/or electronic devices, especially semiconductors, semiconductor components, semiconductor chips, also for LEDs, semiconductor components; laser, not for medical applications; electronic light control apparatus; light emitting diodes, including organic light-emitting diodes, laser diodes, especially power laser diodes, semiconductor power laser diodes for material processing, semiconductor components, light conductors, optoelectronic couplers, optical sensors, light barriers, light-emitting diode modules (i.e. modules with light functions designed from light emitting diodes, also organic light emitting diodes), especially lighting and for signaling purposes, displays (also organic displays) in light-emitting diode technology; parts of all the aforesaid goods included in this class.
In an embodiment a light detection system includes a detector configured to provide a received light signal and a processing circuit configured to identify a number of peaks in the received light signal and to estimate a signal-to-noise ratio associated with the received light signal based on the number of identified peaks.
G01S 7/487 - Extraction des signaux d'écho désirés
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
09 - Appareils et instruments scientifiques et électriques
Produits et services
Electrical and/or electronic components, in particular
semiconductors, semiconductor components, semiconductor
chips, also for light-emitting diodes (LEDs), semiconductor
elements; lasers, not for medical purposes; light control
systems; LED's, including organic ones; laser diodes, in
particular power laser diodes; semiconductor power laser
diodes, also for material processing; semiconductor
components; fibre-optic (also LED-powered) light guides;
optocouplers; optical sensors; light barriers; LED modules,
namely modules with light function for signalling tasks,
constructed from LEDs, also from organic ones; displays,
especially organic displays, based on LED technology; parts
of all the aforesaid goods, included in this Class.
In an embodiment a light emitting device includes a light source, a switching element having an input capacitance associated therewith, the switching element being configured to control a current flow to the light source in accordance with a charging of the input capacitance; a voltage control element coupled with the switching element and having a voltage supply node, the voltage control element having a second capacitance associated therewith, wherein the voltage control element and an input of the switching element are coupled to one another such that the voltage control element and the input of the switching element form a capacitive voltage divider and a driving element configured to provide a driving voltage at the voltage supply node, the driving voltage being greater than a maximum allowable input voltage of the switching element, wherein a relationship between the input capacitance and the second capacitance is in accordance with a relationship between the driving voltage and the maximum allowable input voltage.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.
The invention relates to a device for sterilising a fluid flowing therethrough, said device comprising: a container having an inlet for receiving the fluid and having an outlet for discharging the fluid from the container; a body having a surface which is at least in part curved, the body being positioned within the container in such a way that the fluid flowing into the container via the inlet washes over or around at least part of said body at least in the region of its surface that is curved. The device also comprises a plurality of LEDs which are each designed to emit light having wavelengths in the range of UV radiation, preferably UV-C radiation. The LEDs are designed to irradiate the fluid washing over or around the curved surface of the body with the UV radiation of the LEDs.
The invention concerns a lighting arrangement having at least two light strings, each light string comprising at least one optoelectronic component configured for a power consumption in operation of more than 8 W. A couple of adjustable current sources are connected to a respective one of the at least two light strings and configured to provide an adjustable supply current to respective one of the at least two light strings. The arrangement further comprises an AC/DC converter utilizing GaN based FET technology configured to provide a DC supply voltage to the at least two adjustable current sources and the respective light strings connected thereto. Finally, a control circuit is coupled to the at least two adjustable current sources and configured to individually adjust a duty cycle for each of the at least two adjustable current sources and the supply current provided by the at least two adjustable current sources.
A laser module (1) comprises a laser (90), which is designed to emit a laser beam (8) propagating along an optical axis (O), a collimating lens (40), which collimates the laser beam emitted from an emission facet (96) of the laser (90), and a wavelength-sensitive lattice (60), which partially reflects the collimated laser beam. The collimating lens (40) and wavelength-sensitive lattice (60) are arranged along the optical axis (O) of the laser beam emitted from the laser (90), such that an external cavity is formed by a rear mirror facet of the laser (90) and a reflection plane (62) of the lattice (60) to produce a lo-bandwidth portion of the laser beam transmitted by the wavelength-sensitive lattice (60). The reflection plane (62) of the wavelength-sensitive lattice (60), on which the laser beam collimated by the collimating lens (40) is partially reflected during operation, is inclined with an angular deviation (β) with respect to a plane perpendicular to the optical axis (O) of the laser (90). The collimating lens (40) is configured laterally offset with respect to a position centred on the optical axis (O) of the laser (90) into a position (44, 45) shifted in the direction (X, Y) perpendicular to the optical axis (O), in which the collimating lens (40) collimates the laser beam in a beam direction (7) perpendicular to the inclined reflection plane (62).
An optoelectronic device includes an optoelectronic semiconductor component having an active region configured to generate light and having a light emitting surface through which the generated light is emittable from the semiconductor component, the light emitting surface being arranged on a top surface of the semiconductor component, a converter centered above the light emitting surface and configured to convert the generated light into converted light of at least one other wavelength and an adhesive fixing the converter to the top surface of the semiconductor component, wherein a contour line, projected onto the top surface of the semiconductor component, completely circumvents the converter in a circumferential direction and lies completely within the light emitting surface, wherein the adhesive is arranged between the light emitting surface and the converter and/or in the circumferential direction around the converter.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
18.
PHOSPHOR MIXTURE FOR USE IN A CONVERSION LAYER ON A SEMICONDUCTOR LIGHT SOURCE
A phosphor composition may include first and second phosphors configured to emit light of a first and a second unsaturated color, respectively. The first unsaturated color may be associated with a first position in a CIE standard color chart adjacent to and above a position of a selected target color of the phosphor composition in the CIE standard color chart. The second unsaturated color may be associated with a second position in a CIE chromaticity diagram adjacent to and below the position of the selected target color of the phosphor composition in the CIE chromaticity diagram. Thereby, the position of the selected target color of the phosphor composition in the CIE chromaticity diagram may be located in an area defined by corner positions R=(cx; cy) given by R1=(0.645; 0.335), R2=(0.665; 0.335), R3=(0.735; 0.265), and R4=(0.721; 0.259).
C09K 11/77 - Substances luminescentes, p.ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
F21S 43/16 - Sources lumineuses où la lumière est générée par un matériau photoluminescent espacé par rapport à un élément générateur de lumière primaire
09 - Appareils et instruments scientifiques et électriques
Produits et services
Electrical and/or electronic components, in particular semiconductors, semiconductor components, semiconductor chips, also for light-emitting diodes (LEDs), semiconductor elements; lasers, not for medical purposes; light control systems; LED's, including organic ones; laser diodes, in particular power laser diodes; semiconductor power laser diodes, also for material processing; semiconductor components; fibre-optic (also LED-powered) light guides; optocouplers; optical sensors; light barriers; LED modules, namely, modules with light function for signalling tasks, constructed from LEDs, also from organic ones; displays, especially organic displays, based on LED technology; parts of all the aforesaid goods, included in this Class
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
21.
OPTOELECTRONIC SEMICONDUCTOR DEVICE, OPTOELECTRONIC SEMICONDUCTOR APPARATUS, METHOD OF OPERATING THE OPTOELECTRONIC SEMICONDUCTOR DEVICE, AND BIOSENSOR
An optoelectronic semiconductor component (10) includes a semiconductor stack (109) in which a surface-emitting laser diode (103) and a photodetector (105) are placed vertically on top of one another. The optoelectronic semiconductor component (10) additionally includes an electric power source (149) that is adapted to modify a current intensity applied to the surface-emitting laser diode (103), thus allowing an emission wavelength to be modified.
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p.ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
G01S 17/58 - Systèmes de détermination de la vitesse ou de la trajectoire; Systèmes de détermination du sens d'un mouvement
G01S 17/34 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
22.
SENSOR ARRANGEMENT AND METHOD FOR DETERMINING A CO2 CONTENT IN A GIVEN ENVIRONMENT
In various embodiments, a sensor arrangement for sensing an absolute CO2 level in a given environment may include a light source, an absorption path, a light detector, and an amplifier. The absorption path may be configured to communicate with the given environment, arranged such that a light beam passes through the absorption path, and may have a length ranging from 5 mm to 20 mm. The light detector may be arranged to detect the light beam configured to emerge from the absorption path. The light detector may produce an output signal corresponding to a measured value for the absolute CO2 content in the given environment. The amplifier may be electrically coupled to the light detector and configured to have an output signal corresponding to the absolute CO2 content in the given environment.
G01N 21/3504 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p.ex. analyse de mélanges de gaz
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
Produits et services
Electronic regulating and control devices for the operation of light emitting diodes; Light emitting diodes (LEDs); Lighting ballasts; Lighting controls; Power supplies Electric lamps; LED lighting fixtures for indoor and outdoor lighting applications; Luminaires, using light emitting diodes (LEDs) as a light source, for street or roadway lighting
24.
µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
09 - Appareils et instruments scientifiques et électriques
Produits et services
Elektrische und/oder elektronische Bauteile, insbesondere Halbleiter, Halbleiterkomponenten, Halbleiter-Chips für Leuchtdioden, Halbleiterbauelemente, Halbleiter-Leistungslaserdioden; Lichtleiter, optische Sensoren; Leuchtdioden (LED) und LED-Module; Apparate und Instrumente zum Leiten, Schalten, Umwandeln, Speichern, Regeln und Kontrollieren von Elektrizität; Laser, nicht für medizinische Zwecke; Teile aller vorgenannten Waren, soweit in Klasse 9 enthalten.
26.
Interbonded Components, Method for Detaching Components from Interbonded Components, and Method for Producing Interbonded Components
In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.
A component may include a semiconductor body, an insulation structure, and a connection structure. The semiconductor body may have a first semiconductor layer, a second semiconductor layer, and an active zone located therebetween. The connection structure may have a connection layer in direct electrical contact with the second semiconductor layer. The insulation structure may adjoin both the second semiconductor layer and the connection layer. The insulation structure may laterally surround and may partially cover the connection layer in top view. The connection structure may have through-contacts in electrical contact with the connection layer and along a vertical direction, which extend throughout the insulation structure. The component may have a back side formed as a mounting surface, which is structured and formed, at least in regions, by surfaces of the connection structure. The through-contacts may be formed as individual, one-piece contact columns or as integral parts of a continuous contact layer.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
09 - Appareils et instruments scientifiques et électriques
11 - Appareils de contrôle de l'environnement
37 - Services de construction; extraction minière; installation et réparation
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Traffic-light apparatus [signalling devices]; Flashlights [photography]; Stage lighting regulators; Optical lamps; Light switches; Plugs, sockets and other contacts [electric connections]; Light emitting diodes (LEDs); Semi-conductors; Light regulators [dimmers], electric; Batteries, electric; Integrated circuits; Downloadable computer software applications for use with lighting; Downloadable software applications for mobile phones for use with lighting; none of the aforementioned goods for scientific apparatus, and none for use in laboratories and/or biopharmaceutical manufacturing, other than the apparatus controlling the general lighting in the laboratory or manufacturing facility. Apparatus and instruments for lighting; Oil lamps; Cooking utensils, electric; Air conditioning apparatus; Water-pipes for sanitary installations; Sanitary apparatus and installations; Filters for drinking water; Bathroom heaters; none of the aforementioned goods being scientific apparatus or equipment, and none for use in laboratories and/or biopharmaceutical manufacturing, other than the apparatus controlling the general lighting in the laboratory or manufacturing facility. Installation of lighting apparatus; Installation of lighting systems; Repair or maintenance of electric lighting apparatus; Lighting apparatus repair; Advisory services relating to the installation of lighting apparatus; Lighting apparatus installation; Electric appliance installation and repair; Installation of hardware for Internet access; Installation, maintenance and repair of computer network and information technology equipment; Installation of computer systems; none of the aforementioned services relating to biopharmaceutical manufacturing and laboratory or scientific apparatus or equipment, other than controlling the general lighting in the laboratory or manufacturing facility. Technological research in the field of lighting; Quality control; Material testing; Packaging design; Interior design; Dress designing; Computer software design; Graphic arts design; Software as a service [SaaS] for use with lighting; Services for maintenance of computer software; Installation and maintenance services for software; Design and development of software in the field of mobile applications; Designing computer software for controlling self-service terminals; none of the aforementioned services relating to biopharmaceutical manufacturing and laboratory or scientific apparatus or equipment, other than controlling the general lighting in the laboratory or manufacturing facility.
29.
Electronic Load To Install In The Power Supply of a Vehicle Lamp
In an embodiment an electronic load for installation in a power supply of a vehicle lamp includes a first connection node connected to two first connection sections adapted to be connected between respective corresponding connection sections of a first line carrying a voltage potential, a second connection node connected to two second connection sections adapted to be connected between respective corresponding connection sections of a second line carrying a reference potential, wherein a difference between the voltage potential and the reference potential comprises a supply voltage configured to be supplied to the vehicle lamp and a current sink circuit coupled between the first and second connection nodes, the current sink circuit configured to cause a substantially constant current flow independently of a time-varying supply voltage from at least one of the first connection sections to at least one of the second connection sections.
H05B 45/3575 - Circuits de commande spécialement adaptés aux sources lumineuses LED rétro-compatibles Émulation des caractéristiques électriques ou fonctionnelles des lampes incandescentes utilisant des charges factices ou des circuits de purge, p.ex. des variateurs de lumière
H05B 45/50 - Circuits pour faire fonctionner des diodes électroluminescentes [LED] sensibles à la vie des LED; Circuits de protection
A table-top apparatus for generating a substantially microbe-inactivated room zone comprises a housing with an interior, which has a longitudinal axis, a blower device designed to receive air from outside and convey it into the interior, a radiation source designed to emit light in the UV-C spectral range into the interior, in order to inactivate or kill off microbes in the received air, and an air outlet device through which the sterilized air can flow from the interior into a space surrounding the housing. The air outlet device is designed to produce a preferably laminar flow in the outflowing air, which supports the formation of the substantially microbe-inactivated room zone within the surrounding space. The substantially microbe-inactivated room zone generated in this way is closed off and completely envelops the housing when the latter is viewed in a plane perpendicular to the longitudinal axis of the housing.
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
F24F 13/06 - Bouches pour diriger ou distribuer l'air dans des pièces ou enceintes, p.ex. diffuseur d'air de plafond
F24F 8/22 - Traitement, p.ex. purification, de l'air fourni aux locaux de résidence ou de travail des êtres humains autrement que par chauffage, refroidissement, humidification ou séchage par stérilisation utilisant de la lumière ultraviolette
F24F 3/16 - Systèmes de conditionnement d'air dans lesquels l'air conditionné primaire est fourni par une ou plusieurs stations centrales aux blocs de distribution situés dans les pièces ou enceintes, blocs dans lesquels il peut subir un traitement secondaire; Appareillage spécialement conçu pour de tels systèmes caractérisés par le traitement de l'air autrement que par chauffage et refroidissement par ozonisation
In an embodiment a detector for spectroscopy includes a housing comprises at least one aperture configured for supplying a light beam reflected or emitted from a target, the housing having at least one cross-sectional plane in which the at least one aperture comprises first and second non-contiguous intersecting surfaces, a detector arrangement with a detector surface configured for wavelength- and angle-dependent detection of light, the detector arrangement being arranged in the housing laterally spaced from the at least one aperture, a first reflector element arranged in the housing and a second reflector element opposite the detector surface, wherein the first reflector element is arranged in a beam path of the at least one aperture and is configured to direct a light beam incident through the at least one aperture onto the second reflector element, and wherein the second reflector element is configured to direct an incident light beam onto the detector surface.
The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.
F21S 41/19 - Fixation des sources lumineuses ou des supports de sources lumineuses
F21S 45/47 - Refroidissement passif, p.ex. en utilisant des ailettes, des éléments thermiquement conducteurs ou des ouvertures
F21S 41/148 - Diodes électroluminescentes [LED] la direction principale d’émission des LED faisant un angle avec l’axe optique du dispositif d’éclairage la direction principale d’émission des LED étant perpendiculaire à l’axe optique
F21S 41/151 - Diodes électroluminescentes [LED] disposées sur une ou plusieurs lignes
33.
PROVISION OF TWO MUTUALLY DIFFERENT ELECTRICAL DC VOLTAGES BY MEANS OF AN ENERGY CONVERTER
The invention relates to a method for providing two mutually different electrical DC voltages (12, 14) by means of a clocked energy converter (10) by using a converter switching unit (16) to apply electrical energy from an electrical energy source (20) to a storage inductor (18) and to supply electrical current of the storage inductor (18) to a first electrical capacitor (22), wherein the operation of the converter switching unit (16) is controlled depending on a result of a first comparison of the first DC voltage (12) with a first voltage comparison value. According to the invention, the electrical current of the storage inductor (18) is supplied to the first electric capacitor (22) depending on a switching state of a secondary switching unit (26), wherein the electrical current of the storage inductor (18) is supplied to a second electrical capacitor (24) depending on the switching state of the secondary switching unit (26), wherein the switching state of the secondary switching unit (26) is controlled depending on a result of a second comparison of the second DC voltage (14) with a second voltage comparison value.
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 3/156 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation
H05B 45/3725 - Alimentation du circuit à découpage [SMPS]
34.
DEVICE FOR AIR TREATMENT BY MEANS OF UV RADIATION AND ASSEMBLY WITH THIS DEVICE
A device for air treatment (100) is disclosed that is configured to emit a UV radiation beam (500, 510) at least approximately collimated in at least one dimension. The device for air treatment (100) is arranged in an upper part of a room in such a manner that the rays of the UV radiation beam (500, 510) propagate approximately collimated when perpendicularly viewed in the horizontal viewing direction of the room (y-direction). By means of this configuration and arrangement, an active zone (930), in which the UV radiation beam (500, 510) is vertically confined, is implemented in the upper part of the room.
In an embodiment, a LIDAR system includes a detector having a plurality of detector pixels configured to detect a light signal, wherein the detector pixels are arranged in a two-dimensional array, a light emission system configured to emit a light signal into a field of view of the LIDAR system and one or more processors configured to associate a first detected light signal provided by a first set of detector pixels of the plurality of detector pixels with a direct reflection of the emitted light signal and associate a second detected light signal provided by a second different set of detector pixels of the plurality of detector pixels with a light signal other than the direct reflection of the emitted light signal, wherein the one or more processors are configured to associate the second detected light signal with a light signal from an external emitter located outside the LIDAR system.
The Invention proposes a resonant DC-DC converter comprising an input for inputting a DC supply voltage, an output for providing a DC voltage to a load with an output rectifier to convert the converter voltage into a DC voltage, a resonant half-bridge inverter comprising two switches in series with a first serial resonant circuit to adjust the output current of the converter, and a second serial resonant circuit to block DC current in the converter and provide current continuity within the converter, where the resonance of the first serial resonant circuit is measured after every start of the converter and the result of this measurement defines the switching frequency of the half-bridge inverter, where the switches of the half-bridge inverter are driven with a key gap, where the resonance frequency of the second serial resonant circuit is at least slightly above the switching frequency of the half-bridge inverter. With this measure, the converter can be operated without using a feedback control loop to measure the output current.
H05B 45/3725 - Alimentation du circuit à découpage [SMPS]
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
37.
TWO-STAGE OPERATING DEVICE WITH AN ISOLATABLE CLOCKED CONVERTER AS A POWER FACTOR CORRECTOR AND CONTROL METHOD FOR THE OPERATING DEVICE
The invention relates to a circuit and an associated control method for an operating device, which comprises a first clocked converter as a power factor corrector and a buck post-regulator, which has a SELV barrier or galvanic isolation barrier extending through the power factor corrector, which has a control circuit concentrated on the input side, which is provided for supplying power from a conventional AC power supply network, and data thereof is to be transmitted, only via two optocouplers, for a complete logic link between the input and output side. The output side is designed for connecting to a DC load, in particular an LED or a series circuit of multiple LEDs, provided for general lighting technology. Both optocouplers are to be operated digitally, i.e. in a pulsed manner, in order to compensate for their non-linearity, temperature drift, aging and noise.
The invention relates to a circuit arrangement for operating at least one LED, comprising an input for inputting an electrical system AC voltage, an inverse buck converter for setting a suitable operating current for the at least one LED, the inverse buck converter comprising a first and a second glow avoiding diode for avoiding capacitive displacement currents with respect to a protective ground in the switched-off state of the circuit arrangement. This measure advantageously ensures that glow effects are suppressed when the circuit arrangement is not operational and is still connected to the electrical system AC voltage, since the effects of parasitic capacitances that are responsible for said glow effects are prevented owing to the novel topology of the circuit arrangement.
H05B 45/3725 - Alimentation du circuit à découpage [SMPS]
H05B 45/59 - Circuits pour faire fonctionner des diodes électroluminescentes [LED] sensibles à la vie des LED; Circuits de protection pour réduire ou supprimer les effets de scintillement ou de lueur
In an embodiment a reflector optical system includes a reflector body having a rotational symmetry about a longitudinal axis and including a first reflector optic portion having a substantially concave shape and a second reflector optic portion extending along the longitudinal axis, the first reflector optic portion facing the second reflector optic portion, wherein the first reflector optic portion includes a plurality of first reflective surfaces and the second reflector optic portion includes a plurality of second reflective surfaces in spaced light-receiving relation to the plurality of first reflective surfaces.
F21S 41/33 - Réflecteurs à multi-surfaces, p.ex. réflecteurs à facettes ou réflecteurs avec des sections de courbure différente
F21S 41/148 - Diodes électroluminescentes [LED] la direction principale d’émission des LED faisant un angle avec l’axe optique du dispositif d’éclairage la direction principale d’émission des LED étant perpendiculaire à l’axe optique
F21S 41/365 - Combinaisons de plusieurs réflecteurs séparés reflétant successivement la lumière
F21S 45/47 - Refroidissement passif, p.ex. en utilisant des ailettes, des éléments thermiquement conducteurs ou des ouvertures
40.
QUANTUM DOT STRUCTURE, METHOD FOR PRODUCING A QUANTUM DOT STRUCTURE, AND LIGHT EMITTING DEVICE
A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A phosphor, wherein the phosphor has a formula:
A phosphor, wherein the phosphor has a formula:
VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-yMny)2IV(Al1-2y/3,Si2y/3)3O12,
A phosphor, wherein the phosphor has a formula:
VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-yMny)2IV(Al1-2y/3,Si2y/3)3O12,
wherein
0
C09K 11/77 - Substances luminescentes, p.ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/26 - Matériaux de la région électroluminescente
42.
Dielectric Film Coating for Full Conversion Ceramic Platelets
A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 μm to 80 μm.
A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 μm to 80 μm.
A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
43.
Nanoparticle, structure, and method for producing a nanoparticle
A nanoparticle is specified. The nanoparticle comprises a nanocrystal configured to convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, a first encapsulation comprising pores which reach into or through the first encapsulation, and a second encapsulation which is different from the first encapsulation, wherein the second encapsulation abuts at least one of the pores. Furthermore, a structure comprising a plurality of nanoparticles and a method for producing nanoparticle is specified.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
44.
STRUCTURE, AGGLOMERATE, OPTOELECTRONIC DEVICE AND METHODS FOR PRODUCING A STRUCTURE AND AN AGGLOMERATE
A structure comprising a nanoparticle converting electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength range, an interlayer at least partially surrounding the nanoparticle, and an encapsulation at least partially surrounding the interlayer is specified, wherein the interlayer comprises a plurality of first amphiphilic ligands and a plurality of second amphiphilic ligands and the first ligands and the second ligands are intercalated.
A structure comprising a nanoparticle converting electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength range, an interlayer at least partially surrounding the nanoparticle, and an encapsulation at least partially surrounding the interlayer is specified, wherein the interlayer comprises a plurality of first amphiphilic ligands and a plurality of second amphiphilic ligands and the first ligands and the second ligands are intercalated.
Furthermore, an agglomerate comprising a plurality of structures, an optoelectronic device as well as methods for producing a structure and an agglomerate are disclosed.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
45.
STRUCTURE, OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING A STRUCTURE
A structure, an optoelectronic device and a method for producing a structure are disclosed. In an embodiment, a structure comprises a first nanoparticle comprising at least one semiconductor material. The first nanoparticle is chromophoric in a first wavelength range and emissive in a second wavelength range. The structure further comprises a plurality of second nanoparticles. The second nanoparticles are non-chromophoric in the first wavelength range and in the second wavelength range.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
46.
CURABLE SELF-ADHESIVE WAVELENGTH CONVERTING FILM AND LIGHT EMITTING DEVICE COMPRISING THE SAME
A method for preparing a wavelength converting film is disclosed. The method comprising mixing at least one phosphor, a polysiloxane and optionally an organic solvent, thereby preparing a mixture, placing the mixture on a substrate, pre-curing the mixture on the substrate, thereby preparing a wavelength converting film. Furthermore, a wavelength converting film is disclosed, a method for preparing a light-emitting device and a light-emitting device.
H01L 51/00 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
C09K 11/77 - Substances luminescentes, p.ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
47.
MINIMIZATION OF STOKES' LOSSES DUE TO PHOTON MULTIPLICATION PROCESSES FOR IR APPLICATIONS
The invention relates to a light-emitting component, comprising: at least one conversion element comprising: at least one first material selected from the group consisting of polyazene, rubrene and derivatives thereof; at least one second material, the second material being a quantum dot, and at least one light source, the at least one light source emitting at least one photon in the range of 3.5 eV to 2.5 eV, preferably in the range of 3.0 eV to 2.55 eV. The invention further relates to the use of a light-emitting component according to the invention.
F21V 9/32 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
48.
SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER DEVICE AND PROJECTION DEVICE
A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
The invention relates to an optical device (10) for disinfecting upper air layers in a room, comprising a light source unit (120) and a reflector (200). The light source unit (120) comprises a light source (150) and a light-emitting surface (100) which defines a light source plane (105) and is designed to emit radiation (300) in a UV wavelength range, wherein the light-emitting surface (100) is designed to emit radiation (300) out of the light source unit (120) in an angular range (α, ß, γ, δ) relative to a main emission direction (Z) which is perpendicular to the light source plane (105). The reflector (200) is arranged at a distance (199) to the light-emitting surface (100), said distance being specified in the main emission direction (Z), and receives the radiation (300) emitted by the light-emitting surface (100) and reflects same at least opposite the main emission direction (Z). The reflector (200) has a free form which is designed such that the radiation (300) reflected by the reflector (200) is cast onto a surface (915) to be irradiated which is fixed in the room and which extends beyond the light source plane (105) opposite the main emission direction (Z) when viewed from the reflector (200), wherein the distribution of the irradiation intensity of the radiation (300) cast onto the surface by the reflector (200) is substantially homogenous within the surface.
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
51.
OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
52.
Vehicle retrofit headlamp having reflector optic portions facing each other
An automotive solid-state headlamp includes a lamp body extending in a longitudinal direction, the lamp body having a rear base portion and a front portion and including a support member and a light-transmissive housing, a plurality of solid-state light sources arranged on the support member at the rear base portion of the lamp body, a drive circuitry electrically coupled to the light sources and arranged at the rear base portion of the lamp body and configured to operate the plurality of light sources when energized and reflector optics arranged at the front portion, wherein the solid-state light sources are configured to emit light towards the reflector optics, the reflector optics including a first reflector optic portion and a second reflector optic portion and wherein each of a plurality of first reflective surfaces disposed on the first reflector optic portion extend in an annular region around the longitudinal direction from the plurality of solid-state light sources towards the first reflector optic portion.
A ceramic wavelength converter assembly may include two first layers having an undoped host material or a doped host material, two second layers having a barrier material and being disposed between the two first layers, and a third layer having an undoped host material or a doped host material and being disposed between the two second layers. The two first layers may include the undoped host material and the third layer may include the doped host material, or the two first layers may include the doped host material and the third layer may include the undoped host material. At least one of the two first layers may have a patterned structure.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
In an embodiment an automotive solid-state headlamp includes a lamp body extending in a longitudinal direction, the lamp body having a rear base portion and a front portion and including a support member disposed in a light-transmissive housing, a plurality of solid-state light sources arranged on the support member at the rear base portion of the lamp body, and a drive circuitry electrically coupled to the light sources and arranged at the rear base portion of the lamp body and configured to operate the plurality of light sources when energized, wherein the plurality of light sources, when energized, are configured to cause the solid-state lamp to emit, through the light-transmissive housing (a) a luminous flux of at least 1500 lumens +/−10% when energized with a 13.2 Volt test voltage, or of at least 1750 lumens +/−10% when energized with a 28 Volt test voltage, or (b) a luminous flux of at least 1350 lumens +/−10% when energized with a 13.2 Volt test voltage, or of at least 1600 lumens +/−10% when energized with a 28 Volt test voltage.
A lamellar arrangement for shielding radiation acting on a fluid which flows through an interior of a device, comprises two or more lamellae aligned substantially parallel to one another and respectively defining an intermediate space between them, wherein at least one subset of the lamellae is respectively subdivided into at least three lamella sections comprising a first lamella section, a second lamella section next to the first lamella section and a third lamella section next to the second lamella section. The first lamella section and the second lamella section in this case enclose a first angle between them, and the second lamella section and the third lamella section enclose a second angle between them. The first angle has a magnitude in a range of from 20° to 45° and the second angle has a magnitude in a range of from 20° to 45°.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
The invention relates to an optoelectronic device comprising - a transmitter (1) designed to emit electromagnetic radiation (2) and to be operated with an input voltage (UI), and - a receiver (3) designed to receive the electromagnetic radiation (2) and to provide an output voltage (UO), - the transmitter (1) comprising at least one surface emitter (10), and - the receiver (3) comprising at least one photodiode (30).
H02J 50/30 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant de la lumière, p.ex. des lasers
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
57.
METHOD FOR PRODUCING A GROWTH SUBSTRATE, GROWTH SUBSTRATE, AND METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS
The invention relates to a method for producing a growth substrate, having the following steps: - providing a polycrystalline substrate which has a nitride compound semiconductor material, - applying at least one surface layer onto a main surface of the polycrystalline substrate, wherein - the at least one surface layer has a nitride compound semiconductor material, - the at least one surface layer is designed for an epitaxial growth of an epitaxial semiconductor layer sequence, and - annealing the polycrystalline substrate with the at least one surface layer applied thereon at high temperatures. The invention additionally relates to a growth substrate and to a method for producing a plurality of optoelectronic semiconductor chips.
A method for producing optical elements (1) is specified, comprising the following steps: – providing a first matrix material (2) having first conversion particles (3), – sedimenting the first conversion particles (3) in the first matrix material (2) such that the first conversion particles (3) agglomerate in a first region of the first matrix material (7) and a second region of the first matrix material (8) is free of the first conversion particles (3), – structuring the second region of the first matrix material (8) such that a structured outer surface of the second region of the first matrix material (8) forms a plurality of optical lenses (10), – singulating the first matrix material (2) to form optical elements (1), wherein – each optical element (1) comprises at least one of the optical lenses (10). Furthermore, a method for producing radiation-emitting semiconductor components, an optical element and a radiation-emitting semiconductor component are specified.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
An optoelectronic device is specified having – a transmitter (1) which is designed to emit electromagnetic radiation (2) and to be operated at an input voltage (UI), – a support (7) for the transmitter (1), said support (7) having a top surface (71) and a bottom surface (72), – a first receiver (3) which is designed to receive at least part of the electromagnetic radiation (2) and to supply at least part of an output voltage (UO), wherein – the transmitter (1) comprises at least one surface emitter (10), – the at least one surface emitter (10) of the transmitter (1) is mounted on the top surface (71) of the support (7) and radiates at least part of the electromagnetic radiation (2) through the support (71), – the first receiver (3) comprises at least one photodiode (30), and – the first receiver (3) is arranged on the bottom surface (72) of the support (7).
H01L 31/167 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface
H01L 31/0475 - Matrices de cellules PV formées par des cellules à configuration planaire, p.ex. répétitives, sur un substrat semi-conducteur unique; Micro-matrices de cellules PV
H01L 31/054 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] Éléments optiques directement associés ou intégrés à la cellule PV, p.ex. moyens réflecteurs ou concentrateurs de lumière
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H01S 5/42 - Réseaux de lasers à émission de surface
The invention relates to an optoelectronic device comprising - a transmitter (1) designed to emit electromagnetic radiation (2) and to be operated with an input voltage (UI), and - a receiver (3) designed to receive the electromagnetic radiation (2) and to provide an output voltage (UO), - the transmitter (1) comprising an edge emitter (10), and - the receiver (3) comprising at least one photodiode (30).
H01L 31/167 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface
H01L 31/0475 - Matrices de cellules PV formées par des cellules à configuration planaire, p.ex. répétitives, sur un substrat semi-conducteur unique; Micro-matrices de cellules PV
H01L 31/054 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] Éléments optiques directement associés ou intégrés à la cellule PV, p.ex. moyens réflecteurs ou concentrateurs de lumière
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01S 5/42 - Réseaux de lasers à émission de surface
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
61.
SEMICONDUCTOR LIGHT SOURCE, COVER BODY AND METHOD TO PRODUCE THE SAME
A semiconductor light source (1) is disclosed. The semiconductor light source (1) comprises an optoelectronic semiconductor chip (2) configured to emit radiation (R), and a cover body (5) applied on the optoelectronic semiconductor chip (2), wherein the cover body (5) comprises a light-transmissive base body (3), wherein, seen in cross-section, the light-transmissive base body (3) comprises a plurality of recesses (32) with inclined side faces (33), the recesses (32) start at an emission side (30) of the light-transmissive base body (3) remote from the optoelectronic semiconductor chip (2) and narrow towards the optoelectronic semiconductor chip (2), and wherein a mirror coating (4) is provided on top regions (34) of the recesses (32) next to the emission side (30), whereas bottom regions (35) of the recesses (32) closest to the optoelectronic semiconductor chip (2) are free of the mirror coating (4).
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
In at least one embodiment, the optoelectronic semiconductor device (1) comprises: a carrier (2), a first semiconductor laser (31) configured to emit a first laser radiation (L1) and applied on the carrier (2), and a multi-mode waveguide (4) configured to guide the first laser radiation (L1) and also applied on the carrier (2), wherein the multi-mode waveguide (4) comprises at least one furcation (40) and a plurality of branches (41, 42) connected by the at least one furcation (40).
G02B 6/12 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/122 - Elements optiques de base, p.ex. voies de guidage de la lumière
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
63.
ARRANGEMENT AND METHOD FOR OPERATING AN ARRANGEMENT
The invention relates to an arrangement (21). The arrangement (21) comprises a multitude of radiation sources (32), each radiation source (32) being designed to emit electromagnetic radiation in the UV range when operated, and a control unit (30) designed to control at least one first radiation source (33) of the radiation sources (32) and a second radiation source (34) of the radiation sources (32) separately of each other. The invention further relates to a method for operating an arrangement (21).
A61L 2/08 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des phénomènes physiques des radiations
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contact; Accessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 2/24 - Appareils utilisant des opérations programmées ou automatiques
64.
VITAL SENSOR AND METHOD FOR OPERATING A VITAL SENSOR
The invention relates to a vital sensor, in particular a pulse sensor (1), comprising at least one pixelated emitter array (3) having a first (3.1) and at least one second pixel (3.2), each of which is designed to emit light of one wavelength range towards a projection surface (11). The vital sensor also comprises at least one optical element (5), which is arranged between the at least one pixelated emitter array (3) and the projection surface (11) and is designed to deflect light from the first pixel (3.1) onto a first region of the projection surface (11.1) and light from the at least one second pixel (3.2) onto a second region, different from the first, of the projection surface (11.2). At least one photodetector (2) is designed to detect the light emitted by the pixels (3.1, 3.2) and reflected by the projection surface (11), and an evaluation unit (4) is designed to activate the first (3.1) and the at least one second pixel (3.2) in a pulsed manner and temporally sequentially in order to determine a first reference value.
A picture element for a display device includes a first and a second supply connection, a light-emitting semiconductor device arranged between the first and the second supply terminal, and a comparison unit having a first and a second input and an output. The comparison unit is configured to adjust a voltage at the output in dependence on a comparison of a voltage applied to the first input and a voltage applied to the second input. The picture element also includes a supply switch-configured to control a current flow between the first and the second supply terminal via the light-emitting semiconductor device depending on the voltage applied at the output of the comparison unit. The picture element further includes a selection input, a data input, a memory element and a control switch.
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED]
In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.
In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p.ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
68.
ANTENNA FOR NEAR FIELD COMMUNICATION, DRIVING APPARATUS AND LIGHT EMITTING DIODE LUMINAIRE
The present disclosure relates to an antenna for near field communication, a driving apparatus for light emitting diode, and a light emitting diode luminaire. The antenna comprises a pillar support and a winding wire, the winding wire is wound on the side surface of the pillar support to form a plurality of coils; the plurality of coils are electrically connected in series or in parallel; and adjacent coils among the plurality of coils are spaced apart from each other by a predetermined distance. The driving apparatus comprise a printed circuit board, a driver chip and the antenna. The light emitting diode luminaire comprises a light emitting diode module, and the driving apparatus. The antenna according to an embodiment of the present disclosure can achieve good coupling performance in multiple directions and positions.
H05B 47/19 - Commande de la source lumineuse par télécommande via une transmission sans fil
G06K 19/077 - Supports d'enregistrement avec des marques conductrices, des circuits imprimés ou des éléments de circuit à semi-conducteurs, p.ex. cartes d'identité ou cartes de crédit avec des puces à circuit intégré - Détails de structure, p.ex. montage de circuits dans le support
The invention relates to an optical device (1) comprising: at least one light source (16); and a light guide (10) having a light coupling surface (11) which faces the at least one light source (16) and having a light decoupling surface (12) by means of which light coupled into the light guide (10) is decoupled therefrom. The device also comprises: a light recycling optical system which is designed to increase a luminous intensity of the light, which has been decoupled out of the light decoupling surface (12), with respect to an opposite projection optical system (20); said projection optical system (20), which is designed to project the light, which has been decoupled out of the light decoupling surface (12) and amplified by the light recycling optical system, at least in part onto a projection plane (26) provided at a distance from the optical device (1); and an image mask (14) which is provided in an optical path of the light between a light decoupling surface (12) and the projection optical system (20). The light guide (10) is designed as a flat layer comprising: two main surfaces (30, 32) that are opposite one another and at a distance (d) from one another; and at least one lateral surface (13) that forms the edge (29) of the flat layer. The at least one light source (16) faces the at least one lateral surface (13) so that the lateral surface (13) forms the light coupling surface (11). A first of the two main surfaces (30) forms the light decoupling surface (12) and faces the projection optical system (20).
B60Q 3/62 - Agencement des dispositifs d’éclairage pour l’intérieur des véhicules; Dispositifs d’éclairage spécialement adaptés à l’intérieur des véhicules caractérisés par les aspects optiques utilisant des guides de lumière
B60Q 3/00 - Agencement des dispositifs d’éclairage pour l’intérieur des véhicules; Dispositifs d’éclairage spécialement adaptés à l’intérieur des véhicules
70.
RADIATION-EMITTING SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR COMPONENT
SSS). The invention further relates to a method for selecting a dielectric layer stack and to a method for selecting a conversion material of a conversion element for a radiation-emitting semiconductor component.
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
71.
OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC MODULE
The invention relates to an optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101) with a first conductivity, a second region (102) with a second conductivity and an active region (103) which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body (10). The semiconductor body (10) has a mounting side (10A) and side surfaces (10B) running transversely to the mounting side (10A). Side surfaces (10B) running parallel to the resonator axis are covered by an electrically insulating passivation (50). A cooling layer (30) which is designed to dissipate at least part of the power loss created in the semiconductor body (10) during operation is arranged on a side of the passivation (50) facing away from the semiconductor body (10). The invention also relates to an optoelectronic module (2).
342-xx6-xxx:RE, wherein - EA is an element or a combination of elements selected from the group of divalent elements, - D is an element or a combination of elements selected from the group of tetravalent elements, - E is is an element or a combination of elements selected from the group of trivalent elements, - RE is an activator element or a combination of activator elements, and - 0 ≤ x ≤ 2. The invention also relates to a method for producing a luminophore (1) and to a radiation-emitting component (10).
A driver circuit (10) is specified, comprising a first and a second supply terminal (11, 12), a first node (13), a discharging transistor (16) between the first node (13) and the first supply terminal (11) and a first number N of laser diode arrangements (20, 30). A laser diode arrangement of the first number N of laser diode arrangements (20, 30) comprises a charging transistor (21, 31), a second node (22, 32), a second number M of laser diodes (23-26, 33-36) and a third number L of capacitors (27, 37). The charging transistor (21, 31) is disposed between the second supply terminal (12) and the second node (22, 32). The second number M of laser diodes (23-26, 33-36) is disposed between the second node (22, 32) and the first node (13). The third number L of capacitors (27, 37) is disposed between the second node (22, 32) and the first supply terminal (11). Moreover, a method is specified for operating a driver circuit (10), in particular such a driver circuit (10).
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p.ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
74.
Method for Producing a Structured Wavelength Conversion Layer and Optoelectronic Device with a Structured Wavelength Conversion Layer
In an embodiment a method for producing a structured wavelength conversion layer includes providing a first wavelength conversion layer with wavelength converting properties such that electromagnetic radiation of a first wavelength range is converted into electromagnetic radiation of a second wavelength range, structuring of the first wavelength conversion layer into first regions and second regions, wherein the wavelength converting properties of the first wavelength conversion layer are impaired or removed in the first regions after structuring.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
75.
OPTOELECTRONIC COMPONENT, ILLUMINATION UNIT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic component (10). The optoelectronic component comprises a leadframe (20) having a plurality of contacts (22), further a circuit chip (30) having a driver circuit (36) and a bottom side (32) facing the leadframe and an upper side (34) facing away from the leadframe. A radiation-emitting semiconductor chip (40) is arranged at the upper side of the circuit chip, wherein a rewiring layer (50) is arranged between the circuit chip and the radiation-emitting semiconductor chip for electrically contacting the driver circuit and the radiation-emitting semiconductor chip. Connections (42) of the radiation-emitting semiconductor chip are electrically connected to the rewiring layer via contact bumps (52), and the rewiring layer is electrically connected to the contacts of the leadframe via wire connections (54). The invention also relates to an illumination unit (100) and to a production method.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
76.
OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
The invention relates to an optoelectronic semiconductor component (1) which comprises a semiconductor body (10) having a first region (101) of a first conductivity, a second region (102) of a second conductivity, and an active region (103). The semiconductor device (1) also comprises a first metallic heat sink (21), a second metallic heat sink (22) and a thin film insulation layer (30). The first heat sink (21) and the second heat sink (22) are arranged on a mounting side (10A) of the semiconductor body (10). The first heat sink (21) makes electrical contact with the first area (101). The thin film insulation layer (30) electrically insulates the first heat sink (21) from the second heat sink (22). The thin film insulation layer (30) is in direct contact with the first heat sink (21) and the second heat sink (22). The invention also relates to a method for producing an optoelectronic semiconductor component (1).
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
77.
OPTOELECTRONIC SEMICONDUCTOR LAYER SEQUENCE AND OPTOELECTRONIC SEMICONDUCTOR DEVICE
The invention relates to an optoelectronic semiconductor layer sequence comprising: - an active layer for generating electromagnetic radiation, and - at least one filter layer arranged for at least partial absorption of the electromagnetic radiation generated by the active layer with wavelengths smaller than a predetermined cut-off wavelength. The invention also relates to an optoelectronic semiconductor component.
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
A converter device (1) has a primary coil (2), a secondary coil (3) and a first semiconductor layer (6). The primary coil (2) and the secondary coil (3) are each flat, each has at least one winding and each is coaxially arranged. The primary coil (2) is arranged on a bottom face (10) of the first semiconductor layer (6) and the secondary coil (3) is arranged on a top face (9) of the first semiconductor layer (6).
H01F 17/00 - Inductances fixes du type pour signaux
H01L 49/02 - Dispositifs à film mince ou à film épais
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
A method for producing a structured wavelength conversion layer is disclosed. In an embodiment the method comprises the following steps: - providing a first wavelength conversion layer with wavelength converting properties such that electromagnetic radiation of a first wavelength range is converted into electromagnetic radiation of a second wavelength range, - structuring of the first wavelength conversion layer into first regions and second regions, wherein the wavelength converting properties of the wavelength conversion layer are impaired or removed in the first regions after the structuring. Furthermore, an optoelectronic device with a structured wavelength conversion layer is specified.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
80.
LIGHT-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR CHIP
The invention relates to a semiconductor light emitting chip (100) comprising a semiconductor layer sequence (1) having an active layer (10) which is provided and arranged to generate light when in operation and to couple out via a light outcoupling surface (11), a filter layer (6) deposited on the light outcoupling surface, and a contact structure (8) deposited on the light outcoupling surface in a region free of the filter layer. The invention also relates to a method for producing said light-emitting semiconductor chip (100).
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
81.
RADIATION-EMITTING COMPONENT HAVING A CONVERTER LAYER AND METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT HAVING A CONVERTER LAYER
In an embodiment a component includes a semiconductor chip, a converter layer and a grid structure, wherein the semiconductor chip is configured to generate electromagnetic radiation, wherein the converter layer is configured to convert at least one portion of the electromagnetic radiation, wherein the grid structure is configured to suppress lateral optical crosstalk, the grid structure having a grid frame and openings enclosed by the grid frame, wherein the grid structure only adjoins the converter layer, wherein the openings of the grid structure are free of a material of the converter layer, and wherein optical elements are arranged in the openings.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
82.
OPTOELECTRONIC APPARATUS AND OPTOELECTRONIC SEMICONDUCTOR DEVICE
An optoelectronic apparatus (20) comprises an array of optoelectronic semiconductor devices (10). The optoelectronic apparatus (20) comprises a semiconductor layer stack (105) comprising a first semiconductor layer (110) of a first conductivity type, an active zone (115), and a second semiconductor layer (120) of a second conductivity type. Adjacent optoelectronic semiconductor devices (10) are separated by separating elements (125) vertically extending through the semiconductor layer stack (105). The optoelectronic semiconductor devices (10) are configured to emit generated electromagnetic radiation (15) via a first main surface (111) of the first semiconductor layer (110). The optoelectronic apparatus (20) further comprises portions of a metal layer (130) arranged on a side of the first semiconductor layer (110) facing away from the active zone (115) and being arranged at positions of the separating elements (125).
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/24 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué de la région électroluminescente, p.ex. jonction du type non planaire
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
The invention relates to an optoelectronic device comprising a lead frame having a first metal region and at least one second metal region spaced apart from same, wherein the first and the at least one second metal region form a first cavity on a first side of the lead frame. The optoelectronic device also comprises at least one electrical component, which is arranged in the first cavity and is potted with a potting compound, and which electrically connects the first metal region and the at least one second metal region to one another, as well as at least one optoelectronic component which electrically connects the first metal region and the second metal region on a side of the lead frame facing away from the first cavity, or at least one optoelectronic component which electrically connects the first metal region and a third metal region on a side of the lead frame facing away from the first cavity.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
84.
OPTOELECTRONIC COMPONENT, COMPONENT UNIT AND METHOD FOR PRODUCING THE SAME
An optoelectronic component (1) is described comprising - at least one semiconductor body (2) including a first semiconductor region (3), a second semiconductor region (5) and an active region (4) therebetween, - a cover element (6), which laterally surrounds the at least one semiconductor body (2) and has at least one patterned side surface (6A) facing away from the at least one semiconductor body (2), - a reflection element (7), which at least partly covers the at least one patterned side surface (6A), wherein the active region (4) is at least partly laterally surrounded by the first semiconductor region (3). Moreover, a component unit (19) comprising at least two optoelectronic components (1) and a method for producing a plurality of optoelectronic components (1) or at least one component unit (19) are described.
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/08 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une pluralité de régions électroluminescentes, p.ex. couche électroluminescente discontinue latéralement ou région photoluminescente intégrée au sein du corps semi-conducteur
85.
ARRANGEMENT FOR DISINFECTING AIR AND METHOD FOR DISINFECTING AIR
An arrangement (20) for disinfecting air comprises a first number N of semiconductor bodies (10 to 13) realized as radiation-emitting semiconductor bodies. The arrangement (20) is configured such that air in a beam path (30) of the first number N of semiconductor bodies (10 to 13) is disinfected and is moved by an air flow (29) generated by heat emitted by the first number N of semiconductor bodies (10 to 13). Furthermore, a method for disinfecting air is specified.
The invention relates to an optoelectronic component comprising at least one light-emitting semiconductor component (3) which is provided with a converter layer (5) on a surface emitting light, wherein a cost-effective production is made possible by providing a part of the converter layer (5) with a wavelength-selective mirror (6, 6', 6'').
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light-emitting component includes a connection board with a mounting side. The light-emitting component also includes a light source. The light source is fastened and electrically connected to the connection board on the mounting side. The light-emitting component further includes a cover which covers the connection board in places on its mounting side and laterally surrounds the light source. The light-emitting component additionally includes an optical element. The optical element has a central region which is arranged downstream of the light source on the mounting side of the connection board. A provision is made to prevent impingement of light in the central region of the optical element.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
88.
OPTOELECTRONIC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
In at least one embodiment, the optoelectronic semiconductor device (1) comprises at least one active semiconductor fin (2) which is configured to emit radiation by electroluminescence, wherein the at least one active semiconductor fin (2) starts from a base plane (20), and seen in top view of the base plane (20), the at least one active semiconductor fin (2) runs along at least two different directions (E).
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
89.
METHOD FOR OPERATING A DISCHARGE LAMP AND DISCHARGE LAMP
A method for operating a discharge lamp by modulating a current signal is presented. The discharge lamp is operated with at least two different frequencies. At first a probability distribution function for a first number of first frequency periods and a second number of second frequency periods is defined. Next, the first number of first frequency periods and the second number of second frequency periods are determined depending on the probability distribution function by at least one random number. The current signal is modulated by applying the first number of first frequency periods and the second number of second frequency periods to the current signal for operating the discharge lamp.
Disclosed herein is a cooling device, comprising a cooling plate and a cooling cap, for cooling a heat source, mounted to an outer interface surface of the cooling plate, by means of a cooling fluid. Several spiral-shaped fins are integrated into the cooling plate to form a structure in the shape of a multi-spiral. The fins are arranged next to each other in a mutual distance to form spiral-shaped flow channels for a cooling fluid. An inlet for inflowing the cooling fluid at the center of the multi-spiral fins structure is integrated into the cooling cap. The cooling cap is configured and arranged on the cooling plate so that the inlet is positioned above the center of the multi-spiral fins structure.
The invention describes a method for operating a discharge lamp by adapting a current signal. A distribution function is defined for gathering several time span values that define several different time spans. The several time span values are determined depending on the distribution function by one or more random numbers. The current signal is commutated at every instant of time according to an expiry of each of the several time spans. A light apparatus is provided with a control unit to perform any method.
The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.
The invention relates to a method for controlling a light source and an image-generating unit having a digital micromirror device (DMD), wherein a light beam is directed from the light source onto a number of micromirrors of the DMD, with the aid of which an image is generated depending on various mirror positions and can be output, said method comprising the steps of: operating the DMD by means of pulse width modulation in a pattern of bit segments which are successive within an update time; activating at least one micromirror in order, within a first partial interval of the update time comprising one or more pulses, the pulses corresponding to the bit segments, to set a first mirror position (ON) in such a way that the light beam component incident on the micromirror is output; and providing a power, with which the light source is supplied at least within the duration of the first partial interval so that the light source emits therein a predetermined amount of light. In a first operating mode, the light source is supplied with power within a second partial interval of the same update time in which the at least one micromirror of the digital micromirror device assumes a second mirror position (OFF), so that the light beam component incident on the micromirror is not output from the image-generating unit. A temporal average value of the power in the second partial interval is increased in comparison to a temporal average value of the power within the first partial interval in order to counteract a cooling of the light source in the case of a small amount of light which is provided for the output from the image-generating unit.
G09G 3/34 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
94.
LAYER STACK FOR A SEMICONDUCTOR CHIP, SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A LAYER STACK FOR A SEMICONDUCTOR CHIP
Disclosed is a layer stack (20) for a semiconductor chip (21), the layer stack (20) comprising a semiconductor layer (22) with a first region (23), a second region (24) and an active region (25) between the first region (23) and the second region (24), at least one intermediate layer (26) which covers the semiconductor layer (22) in places, and a side edge (27) of the semiconductor layer (22), wherein the side edge (27) extends transversely or perpendicularly to a main extension plane of the layer stack (20), wherein the first region (23) is doped with a first dopant and the second region (24) is doped with a second dopant, the first region (23) has a contact region (28), the intermediate layer (26) has a recess (29) extending in a stacking direction (z) over the contact region (28), wherein the stacking direction (z) runs transversely to the main extension plane of the layer stack (20), and the layer stack (20) has a cover layer (30), which comprises at least one metal, wherein, at least in places, wherein the cover layer (30) covers the contact region (28), the side edge (27), the intermediate layer (26) and side walls in the recess (29) of the intermediate layer (26). Also disclosed is a method for producing a layer stack (20) for a semiconductor chip (21).
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/109 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à hétérojonction
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
95.
LED chip insert, lighting device, lighting module, and method of manufacturing the lighting device
In an embodiment a LED chip insert for a printed circuit board includes a lead frame in which a number of electrically conductive strings with respective ends are formed by punching, the strings having support surfaces which are configured for mounting on the printed circuit board and which form a common plane, wherein the lead frame has a region formed as a recess with respect to the ends, an injection molded frame including an electrically insulating material and annularly surrounding a surface of the lead frame exposed within the region formed as the recess facing the ends of the strings, and thereby effecting an overall trough-like structure; and at least one LED chip which is placed in the region formed as the recess and has a first electrical contact terminal and a second electrical contact terminal, the first electrical contact terminal being electrically conductively connected to a first one of the strings and the second electrical contact terminal being electrically conductively connected to a second one of the strings.
A laser system (20) for measuring distance is specified, the laser system (20) comprising a laser (21), a beam splitter (22) designed to split laser radiation emitted by the laser (21) into first laser radiation (L1) and second laser radiation (L2), with the first laser radiation (L1) and the second laser radiation (L2) each comprising a proportion of the laser radiation emitted by the laser (21), a modulation module (23) designed to alter the intensity of the first laser radiation (L1) for the duration of a first time interval (Z1), and a detector (24), with the beam splitter (22) being arranged between the laser (21) and the modulation module (23), the laser (21) being designed to continuously emit laser radiation, the frequency of which changes at least during a second time interval (Z2), and the detector (24) being configured to detect at least a portion of the first laser radiation (L1) reflected at an object (29) and at least a portion of the second laser radiation (L2). Moreover, a method of measuring distance is specified.
G01S 17/34 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/58 - Systèmes de détermination de la vitesse ou de la trajectoire; Systèmes de détermination du sens d'un mouvement
97.
OPTOELECTRONIC LIGHTING DEVICE AND PRODUCTION METHOD
The invention relates to an optoelectronic lighting device comprising a carrier, more particularly a leadframe, at least one light-emitting semiconductor element arranged on the carrier and configured to emit pulsed light in a wavelength range, more particularly an infrared wavelength range, a first potting compound, which is substantially transparent to said wavelength range and covers at least one light emission region of the semiconductor element; and a second potting compound, which is substantially transparent to said wavelength range and adjoins the first potting compound as viewed in an emission direction of the semiconductor element. In this case, the first potting compound has a higher thermal stability than the second potting compound.
The invention relates to a measuring method, comprising the following steps: - transmitting a transmission signal which comprises at least one light pulse, wherein an amplitude of an intensity of the light pulse is modulated with a modulation frequency, - detecting a receiving signal that comprises at least a part of the transmission signal reflected by an external object, - selecting at least one frequency component of the receiving signal, which corresponds to the modulation frequency of the transmission signal, - determining a distance to the external object based on a time difference between the transmission of the transmission signal and the detection of the selected frequency component of the receiving signal. The invention also relates to a measuring method.
H01S 3/106 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation par commande de dispositifs placés dans la cavité
H01S 3/08 - Structure ou forme des résonateurs optiques ou de leurs composants
99.
ARRANGEMENT FOR A REAR LAMP FOR A MOTOR VEHICLE AND METHOD FOR OPERATING AN ARRANGEMENT FOR A REAR LAMP FOR A MOTOR VEHICLE
An arrangement (20) for a rear lamp for a motor vehicle is specified, the arrangement (20) comprising a first module (21), a second module (22) and a third module (23), wherein the first module (21), the second module (22) and the third module (23) are arranged in succession along a lateral direction (x) so that the first module (21) and the second module (22) overlap at least at points, the first module (21) and the second module (22) are translucent at least at points, the first module (21), the second module (22) and the third module (23) each comprise a multiplicity of light-emitting diodes (24), the first module (21) and the second module (22) each comprise a multiplicity of conductor tracks (25) between the light-emitting diodes (24), and at least one of the three modules (21, 22, 23) comprises a multiplicity of luminous segments (28), with each of the luminous segments (28) having at least one of the light-emitting diodes (24), at least two of the luminous segments (28) having different sizes and each luminous segment (28) comprising a group of light-emitting diodes (24). Moreover, a method for operating an arrangement (20) for a rear lamp for a motor vehicle is specified.
B60Q 1/38 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules pour indiquer un changement de direction utilisant des sources lumineuses fixes, p.ex. feux fixes clignotants
F21S 43/13 - Dispositifs de signalisation spécialement adaptés à l’extérieur des véhicules, p.ex. feux de freinage, feux clignotants indicateurs de direction ou feux de recul caractérisés par la source lumineuse caractérisés par le type de source lumineuse
B60Q 1/26 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules
B60Q 1/50 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules pour indiquer d'autres intentions ou conditions, p.ex. demandes d'attente ou de dépassement
B60Q 1/00 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet
H04N 13/395 - Affichages volumétriques, c. à d. systèmes où l’image est réalisée à partir d’éléments répartis dans un volume avec échantillonnage de la profondeur, c. à d. construction du volume à partir d’un ensemble ou d’une séquence de plans d’image 2D
F21S 43/19 - Fixation des sources lumineuses ou des supports de sources lumineuses
F21S 43/20 - Dispositifs de signalisation spécialement adaptés à l’extérieur des véhicules, p.ex. feux de freinage, feux clignotants indicateurs de direction ou feux de recul caractérisés par des réfracteurs, des glaces de fermeture transparentes, des guides ou des filtres de lumière
F21W 103/20 - Feux clignotants indicateurs de direction
The invention relates to a method for transferring optoelectronic semiconductor components (1) from a first carrier (10) to a second carrier (11), comprising the following steps: providing a multiplicity (2) of optoelectronic semiconductor components (1) on the first carrier (10); providing the second carrier, the second carrier (11) having on the top side (11a) thereof a contact structure (3) with a multiplicity of periodically arranged contact pads (4); picking up the multiplicity (2) of optoelectronic semiconductor components (1) by means of a transfer unit (12) comprising placing the transfer unit (12) onto a top side of the optoelectronic semiconductor components (1), the opposite side relative to the first carrier (10); lifting off the multiplicity (2) of optoelectronic semiconductor components (1) from the first carrier (10); and placing a first subset (2a) of the multiplicity (2) of optoelectronic semiconductor components (1) on a first subset of the multiplicity of periodically arranged contact pads (4).
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
