A pixel system for an imaging device can include one or more pixels comprising a pulse trigger assembly configured to detect a pulse at one or more threshold voltages, a timer system forming part of and/or connected to the one or more pixels, the timer system comprising one or more trigger switches. The pulse trigger assembly can be configured to activate the one or more trigger switches in response to detecting the pulse at the one or more threshold values. The pixel system can include a time-of-flight (TOF) module operatively connected to the one or more pixels and/or the timer system to determine a TOF based on an output from the timer system while simultaneously performing either or both passive imaging and asynchronous laser pulse detection.
G01S 7/487 - Extraction des signaux d'écho désirés
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
A time-of-flight sensor threshold circuit outputs a threshold voltage to a time-of-flight sensor, the threshold reducing over the duration of a time-of-flight measurement, which reduction can occur continually during the measurement. The circuit is provided with an initial threshold voltage portion to set the threshold voltage corresponding to a selected maximum threshold value, a time-dependent portion, to charge and discharge over time, to or from a current control portion, a threshold voltage ramp control portion to lower the threshold value over time by charging or discharging the time-dependent portion to or from the current control portion at a selected rate, and a synchronizing portion to synchronize current flow to or from the current control portion with a synchronizing input signal synchronized with an illumination pulse from a connected illuminator.
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/14 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels une impulsion de tension ou de courant est initiée et terminée en fonction respectivement de l'émission d'impulsions et de la réception d'écho, p.ex. en utilisant des compteurs
A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A photodetector array (PDA) system includes metal traces. A dielectric passivation layer defines a front side of a stack. An absorption layer is on a back side of the stack relative to the dielectric passivation layer. An array of pixels is included, each having a respective diffusion feature between the dielectric passivation layer and the absorption layer. The diffusion features are operatively connected to the absorption layer for photodetection. A metal trace runs between respective diffusion features. The metal trace is at a depth in the stack closer to the front side of the stack than the absorption layer. The dielectric passivation layer electrically insulates the metal trace from a front side surface of the stack.
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
A system for aligning components of an imaging device includes an imaging device, and a test camera. The imaging device includes a lens and a focal plane array (FPA). The FPA defines an optical axis and includes at least two test elements configured and adapted to emit a light through the lens. The test camera is configured and adapted to be mounted to and pre-aligned with the lens of the imaging device to receive a light from the at least two test elements.
In accordance with at least one aspect of this disclosure, a photodiode structure can include a charge layer comprised of undoped InP, and a detector active area forming a junction with the charge layer and having edges configured to prevent edge breakdown. The location of the junction can be controlled through a diffusion of the detector active area or through an epitaxially grown doped region, for example. The photodiode structure can also include a charge control layer comprised of doped InP. The charge control layer can include a thickness and carrier concentration configured to achieve a predetermined gain, high speed, low dark current, and low break down voltage.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
7.
Visible-swir hyper spectral photodetectors with reduced dark current
A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
H01L 31/08 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
8.
Imaging while simultaneously detecting, tracking and decoding multiple coded laser spots
A system comprises a photodetector array (PDA) including a plurality of imaging pixels configured to generate electrical signals indicative of an imaged scene, and an integrated circuit (IC) operatively connected to the PDA to receive the electrical signals from the imaging pixels to form image data.
A method of medical imaging is provided. The method includes receiving pulsed light emissions from fluoroscopic material in a target field of a patient, wherein the target field was treated with fluoroscopic material that emitted the pulsed light emissions in response to a pulsed laser signal. The pulsed laser signal has a wavelength that was selected to excite the fluoroscopic material. The method further includes capturing a passive image of the target field and asynchronously detecting pulses of the pulsed light emissions. The method further includes determining pulse-source coordinates in the image, wherein the pulse-source coordinates correspond to a location of the fluoroscopic material that emitted the pulsed light emissions.
A system includes a pixel having a diffusion layer within a cap layer. The diffusion layer defines a front side and an illumination side opposite the front side with an absorption layer operatively connected to the illumination side as well as the diffusion and cap layers. A set of alternating oxide and nitride layers are deposited on the front side of the cap and diffusion layers.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A pixel system for an imaging device can include one or more pixels comprising a pulse trigger assembly configured to detect a pulse at one or more threshold voltages, a timer system forming part of and/or connected to the one or more pixels, the timer system comprising one or more trigger switches. The pulse trigger assembly can be configured to activate the one or more trigger switches in response to detecting the pulse at the one or more threshold values. The pixel system can include a time-of-flight (TOF) module operatively connected to the one or more pixels and/or the timer system to determine a TOF based on an output from the timer system while simultaneously performing either or both passive imaging and asynchronous laser pulse detection.
G01S 7/487 - Extraction des signaux d'écho désirés
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.
A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.
A sensor includes a sensor array. The sensor array includes a plurality of passive imaging pixels and a plurality of time of flight (TOF) imaging pixels. A method of imaging includes collecting passive imaging data from a sensor array and collecting time of flight (TOF) imaging data from the sensor array. Collecting passive imaging data and collecting TOF imaging data can be performed at least partially at the same time and along a single optical axis without parallax.
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 25/76 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
H04N 23/45 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande pour générer des signaux d'image à partir de plusieurs capteurs d'image de type différent ou fonctionnant dans des modes différents, p. ex. avec un capteur CMOS pour les images en mouvement en combinaison avec un dispositif à couplage de charge [CCD]
15.
System and method of sensing for petroleum, oil, and gas leaks using optical detection
A system for remote detection of fluid leaks from a natural gas or oil pipeline including a laser light source for detecting a methane leak while sweeping in multiple directions, a Midwave Infrared (MWIR) detector optically coupled with the laser light source and a controller operatively connected to the laser light source and the MWIR detector for aggregating data collected by the laser light source and the MWIR using a nuropmophic flow detection algorithm including computational fluid dynamic models.
G01N 21/25 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/27 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
16.
Neuromorphic vision with frame-rate imaging for target detection and tracking
An imaging system and a method of imaging are provided. The imaging system includes a single optics module configured for focusing light reflected or emanated from a dynamic scene in the infrared spectrum and a synchronous focal plane array for receiving the focused light and acquiring infrared images having a high spatial resolution and a low temporal resolution from the received focused light. The imaging system further includes an asynchronous neuromorphic vision system configured for receiving the focused light and acquiring neuromorphic event data having a high temporal resolution, and a read-out integrated circuit (ROIC) configured to readout both the infrared images and event data.
H04N 5/33 - Transformation des rayonnements infrarouges
G06N 20/10 - Apprentissage automatique utilisant des méthodes à noyaux, p.ex. séparateurs à vaste marge [SVM]
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
A method includes flashing an object with a first illumination pulse at a first illumination power level, flashing the object with a second illumination pulse at a second illumination power level different from the first illumination power level, integrating at least a portion of a first return pulse which is the first illumination plus returning from the object to determine a first return time, and integrating at least a portion of a second return pulse which is the second illumination pulse returning from the object to determine a second return time. The method includes using the first and second return times to determine distance to the object independent of reflectivity of the object.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
An optical assembly includes a window having an interior surface and an opposed exterior surface. A perimeter surface connects between the interior surface and the exterior surface. A metal layer is bonded to the perimeter surface of the window. An anti-reflective coating (ARC) is bonded to the interior surface of the window. A metallic lid is joined to the metal layer for enclosing a focal plane array (FPA) aligned with the window.
A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/13 - Supports, p.ex. substrats isolants non amovibles caractérisés par leur forme
A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
22.
Sensors for simultaneous passive imaging and range finding
A sensor includes a sensor array. The sensor array includes a plurality of passive imaging pixels and a plurality of time of flight (TOF) imaging pixels. A method of imaging includes collecting passive imaging data from a sensor array and collecting time of flight (TOF) imaging data from the sensor array. Collecting passive imaging data and collecting TOF imaging data can be performed at least partially at the same time and along a single optical axis without parallax.
A pixel includes a constant current source electrically connected to a first node. An integrating capacitor is electrically connected between the first node and a ground. A sampling transistor is electrically connected between the first node and a second node. A photodiode is electrically connected between a base terminal of the sampling transistor and the ground for switching electrical connectivity through the sampling transistor in response to radiation incident on the photodiode.
An eyecup for an optic can include an elastic body forming an eye receiver and a viewing cavity, the elastic body configured to move between a relaxed state and a compressed state. The eyecup can include a diaphragm formed from or attached to an inner surface of the elastic body, the diaphragm including one or more flaps configured to be in a closed position when the elastic body is in the relaxed state such that the one or more flaps block sight of an optic through the viewing cavity, and to be in an open position when the elastic body is in the compressed state such that the one or more flaps allow sight of an optic through the viewing cavity. The eyecup can include one or more magnets disposed on at least one of the one or more flaps to move with the one or more flaps, and one or more sensors disposed in a fixed location and configured to sense a magnetic field or flux thereof of the one or more magnets to sense the one or more magnets when the flaps are in or near or moving toward the open position.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de structures soudées
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
26.
Scaled two-band histogram process for image enhancement
A method of image enhancement includes constructing an input histogram corresponding to an input image received at a focal plane array. The method includes performing histogram equalization on a first band of the input histogram starting from a zero value and ending at a division value representing a pixel bin value where a predetermined fraction of the input histogram by pixel hound is reached to produce a first portion of an equalization curve. The method includes performing histogram equalization on a second band of the input histogram starting from the division value and ending at a pixel bin value where all of the input histogram by pixel count is reached to produce a second portion of the equalization curve. The method includes applying the equalization curve to the input image to produce a corresponding enhanced image.
An identification system for a digital air traffic control center includes a sensor with a field of view and having a pulse detection array, a user interface to display air traffic objects in the field of view of the sensor, and a controller. The controller includes a pulse detection module disposed in communication with the pulse detection array to identify an air traffic object using pulsed illumination emitted by a pulsed illuminator carried by the air traffic object within the field of view of the sensor. Digital air traffic control centers, airfields, and air traffic object identification methods are also described.
An imaging method includes determining heading of a digital weapon sight, determining heading of a helmet mounted display, and calculating difference between the heading of the digital weapon sight and the heading of the helmet mounted display. When the difference between the heading of the digital weapon sight and the heading of the helmet mounted display is outside of a predetermined range image data communication between the digital weapon sight and the helmet mounted display is disabled. Imaging systems and weapons assemblies having imaging systems are also described.
A laser alignment arrangement includes a first stage configured to structurally support a laser at a first longitudinal position of the laser, the first stage being configured to adjust the first longitudinal position of the laser in at least one direction orthogonal to an axis of the laser, and a second stage configured to structurally support the laser at a second longitudinal position of the laser, the second stage being configured to adjust the second longitudinal position of the laser in at least one direction orthogonal to the axis of the laser.
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
H01S 3/00 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/02 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure
30.
Tactical rails, tactical rail systems, and firearm assemblies having tactical rails
A tactical rail for a firearm includes a rail body having a receiver end and a muzzle end, a non-contact optical connection, and a high speed data spoke. The non-contact optical connection is arranged at an end of the rail body and is configured to interface with a corresponding non-contact optical interface. The high speed data spoke is connected to the non-contact optical connection for high speed data communication through the non-contact optical connection and the corresponding non-contact optical interface. Tactical rail arrangements and firearm with tactical rails and tactical rail arrangements are also described.
A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 27/144 - Dispositifs commandés par rayonnement
H01L 31/109 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à hétérojonction
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
A method of determining the composition of a polymeric body includes applying electromagnetic radiation to the polymeric body, modulating the electromagnetic radiation using a tagant disposed within a polymer composition forming the polymeric body, and receiving the modulated electromagnetic radiation from the tagant at an infrared detector. The electromagnetic radiation received from the tagant has a signature corresponding to the polymer composition forming the polymeric body. A method of making a polymeric body and system for determining composition of a polymeric body are also described.
G01J 5/02 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique - Détails structurels
C08K 11/00 - Emploi d'ingrédients de constitution inconnue, p.ex. produits de réaction non définis
G01N 21/25 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
C08J 3/20 - Formation de mélanges de polymères avec des additifs, p.ex. coloration
G01N 21/31 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique
G01N 21/63 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité optiquement
C08J 3/22 - Formation de mélanges de polymères avec des additifs, p.ex. coloration en utilisant les techniques des charges mères
G01N 21/3563 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solides; Préparation des échantillons à cet effet
A configurable analog to digital converter (ADC) is provided. The configurable ADC includes a comparator receiving and comparing a first analog voltage signal to a second analog voltage signal V-DAC and outputting a signal C-OUT that is responsive to a result of the comparison, an integrator operating on C-OUT and outputting an N-bit value, a digital-to analog converter (DAC) converting the N-bit value to the second analog voltage signal V-DAC, and an integrator, the integrator including the N-bit memory, which is coupled to an arithmetic logic unit (ALU), the N-bit memory and ALU cooperating to perform operations using both the N-bit value and C-OUT. The configurable ADC is configured to operate in more than one mode selected from a plurality of selectable ADC modes.
H03M 1/46 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p.ex. du type à approximations successives avec convertisseur numérique/analogique pour fournir des valeurs de référence au convertisseur
A pixel of a pixel array is provided. The pixel includes a low frequency path configured to receive an input signal from a corresponding photodetector. The low frequency path includes a passive imaging circuit provided along the low frequency path, the passive imaging circuit configured to output an analog imaging signal and a flash analog to digital converter (ADC) that receives the analog imaging signal and processes the analog imaging signal to output a coarse digitized signal.
H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
An imaging method includes assigning pixels within the extent of a focal plane array active area to a first readout range and a second readout range. Image data is read out from the pixels assigned to the first readout range and the second readout range. Pixels located within the extend of the focal plane array active area and not assigned to the first readout range or the second readout range are left unread. Imaging systems and hyperspectral imaging arrangements are also described.
A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/13 - Supports, p.ex. substrats isolants non amovibles caractérisés par leur forme
A method of digitally boresighting includes finding a laser spot in a field of view of an imaging device that has an optical center, wherein the laser spot is generated by a laser, determining an offset vector between the laser spot in the field of view and the optical center, and correcting for boresight misalignment of the laser and imaging device in the image on a display using the offset vector.
A modular digital optical gunsight (MDOG) peripheral module validation device includes an MDOG data connector configured to connect to an MDOG peripheral module and to receive and/or transmit MDOG data in a first format to or from the MDOG peripheral module, a translation module configured to translate the MDOG data in the first format to a second format that is compatible with a personal computer (PC), and a PC data connector configured to connect the validation device to a PC and to receive and/or transmit the MDOG data in the second format to the PC. The translation module can be configured to translate data in the second format to the first format.
An imaging device includes a camera and an illuminator. The illuminator is positioned and configured to illuminate an article through an illuminator tunable filter disposed along an optical axis and capture an image of the article through a camera tunable filter arranged along the optical axis. Imaging arrangements and imaging methods are also described.
A multimode pixel of a pixel array is provided. The multimode pixel includes a photodetector, an image sensing circuit having a first plurality of transistors, and a laser range finding (LRF) circuit having a second plurality of transistors. At least one transistor of the second plurality of transistors, but not all of the second plurality of transistors, is included in the first plurality of transistors. The LRF circuit being configured to perform LRF operations and the image sensing circuit is configured to perform passive imaging operations. The image sensing circuit and the LRF circuit are configured to perform concurrently.
G01S 17/02 - Systèmes utilisant la réflexion d'ondes électromagnétiques autres que les ondes radio
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
41.
Pixel output processing circuit with laser range finding (LRF) capability
A pixel output processing circuit of a focal plane array (FPA) having a plurality of laser range finding pixels (LRF) is provided. The respective LRF pixels output a high frequency analog signal in response to sensing a reflected laser pulse. The pixel output processing circuit includes a common net and a detection circuit. The common net is connected to a amplifying transistor of each of the LRF pixels for receiving analog signals output from the respective LRF pixels. The detection circuit is coupled to the common net and outputs a pulse flag in response to detecting that a high frequency analog signal has been received by the common net.
G01C 3/08 - Utilisation de détecteurs électriques de radiations
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
An optics arrangement includes a polarized beam splitter arranged along an collection axis, a first quarter waveplate arranged along the collection axis, and a second quarter waveplate. The second quarter waveplate is arranged along the collection axis and is optically coupled to the first quarter waveplate by the polarized beam splitter to limit return of polarized illumination originating in a scene being illuminated for retroreflector detection. Retroreflector detectors and methods of imaging a scene are also described.
G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
G02B 6/122 - Elements optiques de base, p.ex. voies de guidage de la lumière
G02B 6/126 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré utilisant des effets de polarisation
G02B 5/30 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES Éléments optiques autres que les lentilles Éléments polarisants
G02B 6/27 - Moyens de couplage optique avec des moyens de sélection et de réglage de la polarisation
G01B 11/03 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur en mesurant les coordonnées de points
G01N 21/78 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique produisant un changement de couleur
An imaging method includes imaging a scene having a pulsed light source and associating a symbol with the light source. The image is enhanced by inserting a symbol into the image indicative of location of the pulsed light source in the scene. The symbol overlays the image in spatial registration with the location of the pulsed light source in the scene to augment indication of the location provided by the pulsed light source. Imaging systems are also described.
A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A method of navigating an autonomous vehicle includes receiving pulsed illumination from an object in the vehicle environment and decoding the pulsed illumination. The object is identified using the decoded pulsed illumination of the pulsed illumination, and the autonomous vehicle navigated through the vehicle environment based on the identification of the object. Obstacle avoidance methods and navigation systems for autonomous vehicles are also described.
G05D 1/02 - Commande de la position ou du cap par référence à un système à deux dimensions
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
G06K 9/62 - Méthodes ou dispositions pour la reconnaissance utilisant des moyens électroniques
A method of enhancing an image includes constructing an input histogram corresponding to an input image received at a focal plane array, the input histogram representing a pixel intensity distribution corresponding to the input image and performing an analytical operation on the input histogram to produce a modified cumulative distribution, wherein the analytical operation is a function of camera temperature. The input image is transformed using the modified cumulative distribution to produce an enhanced output image corresponding to the input image, wherein at least a portion of the input image is enhanced in the output image. In addition to or in lieu of the non-linear operation, the binning edges of the input histogram can be adjusted based on at least one of camera temperature and sensitivity state to construct an adjusted cumulative distribution.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
G06T 5/40 - Amélioration ou restauration d'image en utilisant des techniques d'histogrammes
A method of threat detection includes illuminating a scene with short-wavelength infrared (SWIR) illumination and receiving a return of the SWIR illumination reflected back from the scene. The method includes analyzing the return of the SWIR illumination to detect presence of man-made optics in the scene. Illuminating, receiving, and analyzing can be performed by a device, e.g., a rifle-mounted laser device.
A method of focusing an imaging device includes acquiring an image. A determination is made whether contrast difference between a pixel and one or more adjacent pixels is likely due to noise, or whether the contrast difference is due to the image being out-of-focus. Focus of the imaging device is when the contrast difference is due to the image being out-of-focus while contrast difference determined to likely be due to noise is ignored.
A method of correcting lag in an imaging pixel includes receiving a current frame pixel value and determining a current filter coefficient using the current frame pixel value. A pixel output is determined from a product of the current frame pixel value and current frame filter coefficient. The product of a first prior frame pixel value and corresponding first prior frame filter coefficient is added to the pixel output to generate a corrected pixel output to more closely indicates incident illumination on the imaging pixel during an integration period from which the current frame pixel value was obtained.
H04N 5/359 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué aux porteurs de charge en excès générés par l'exposition, p.ex. bavure, tache, image fantôme, diaphonie ou fuite entre les pixels
H04N 5/217 - Circuits pour la suppression ou la diminution de perturbations, p.ex. moiré ou halo lors de la production des signaux d'image
50.
Digital ROIC enhancement and repetition frequency decoding of asychronous laser pulses
A method includes acquiring a pulse detection bitmap from an imaging sensor array into a digital read out integrated circuit (DROIC), filtering the pulse detection bitmap within the DROIC to convert the pulse detection bitmap into a filtered pulse detection bitmap, and determining for a given pixel in the filtered pulse detection bitmap whether the pixel has a value that exceeds a threshold, indicating a true laser pulse return has been detected in the pixel.
H01L 27/00 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/487 - Extraction des signaux d'écho désirés
G01J 1/42 - Photométrie, p.ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
A bayonet mounting system includes an interchangeable component. The system also includes a housing having a cylindrical opening with a sealing surface on a radially inward facing surface and a frustoconical surface that tappers radially outwardly from the radially inward facing surface at the cylindrical opening. The frustoconical surface is configured to radially compress at least a portion of a resilient member during attachment of the interchangeable component to the housing. The housing also has a groove extending radially outward of at least a portion of the frustoconical surface configured to retain the interchangeable component to the housing in a bayonet latching fashion.
G03B 17/14 - Corps d'appareils avec moyens pour supporter des objectifs, des lentilles additionnelles, des filtres, des masques ou des tourelles de façon interchangeable
G02B 7/14 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles équipées de lentilles interchangeables
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
A non-transitory computer readable medium including computer executable instructions for performing a method that includes locating a pulsing laser on an imaging array, defining a sub-region array smaller than the imaging array based on a location of the located pulsing laser such that the pulsing laser is at least partly within the sub-region, and sampling the sub-region array at a sub-region sampling rate that is higher than a remainder region sampling rate.
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01J 1/42 - Photométrie, p.ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
An imaging pixel includes a photodetector for generating a charge signal, an input buffer, a control device, and a switch. The input buffer is connected to the photodetector for amplifying the charge signal. The control device is connected to the photodetector and the input buffer to separate high-frequency charge signals from low frequency charge signals. The switch is operably connected to the input buffer for sampling of high-frequency charge signals in a charge storage device triggered by amplitude of high-frequency charge signals provided by the input buffer.
H04N 13/214 - Générateurs de signaux d’images utilisant des caméras à images stéréoscopiques utilisant un seul capteur d’images 2D utilisant le multiplexage spectral
A method includes correcting for at least one of gain and offset during frame integration for photodetector events. Gain and offset correction is performed separately in each pixel of a digital read-out integrated circuit (DROIC) for a plurality of corresponding pixels in a photodetector array. First and second binary counters respectively use a gain register and an offset register to implement gain and offset correction.
H04N 5/365 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
An imaging apparatus includes a camera with a solid-state sensor and an illumination selector. The illumination selector is arranged for optical coupling with the sensor and arranged for communicating electromagnetic radiation within a shortwave infrared narrowband to the sensor. The shortwave infrared narrowband includes a peak absorption or peak reflection wavelength of moisture to infrared illumination to image moisture disposed within a solar cell array.
G01N 21/3554 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour la détermination de la teneur en eau
56.
Bump structures for interconnecting focal plane arrays
A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
An electronic device sealing arrangement includes a housing, an access door, a sealing member sized and configured to be sealingly compressed between the access door and the housing, a latch in operable communication with the housing and the access door, the latch being configured to compress the sealing member between the access door and the housing when moved to a position that latches the access door in a closed position, and a resilient member in operable communication with the latch and at least one of the housing and the access door, the resilient member being configured to at least partially compress when the access door is latched in the closed position and the sealing member is compressed between the access door and the housing.
An imaging system includes a readout integrated circuit (ROIC) is operatively connected to receive photocurrent from a plurality of photodetectors (e.g., from a plurality of photodetectors of a photodetector array (PDA)). An event detection circuit in each ROIC pixel readout circuit generates binary output data, wherein the ROIC compresses the binary output data with a logical summary binning of N×M pixel binary outputs into a single summary output bit. The ROIC can be configured to receive image data from the photodetectors to form an image at a first frame rate, and to receive the binned binary data from the photodetectors at a second frame rate higher than the first frame rate.
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/347 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p.ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner en combinant ou en mélangeant les pixels dans le capteur SSIS
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
An imaging method includes receiving electromagnetic radiation at a focal plane array of a handheld device. The electromagnetic radiation is processed within the handheld device, and visible images are displayed on the handheld device. The displayed visible images are indicative of a scene, and include a designator and a designator identifier when a high frequency laser pulse is in the scene. The designator and designator identifier represent the high frequency pulsed electromagnetic radiation received by the focal plane array when a high frequency pulse is present in the scene.
G01S 5/16 - Localisation par coordination de plusieurs déterminations de direction ou de ligne de position; Localisation par coordination de plusieurs déterminations de distance utilisant des ondes électromagnétiques autres que les ondes radio
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01J 5/00 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique
A method of inspecting a silicon article includes irradiating a silicon article with infrared radiation, transmitting a portion of the infrared radiation through the silicon article, and filtering the infrared radiation transmitted through the silicon article. Image data is acquired from the filtered infrared radiation and an image of the silicon article reconstructed from the image data. Based on the reconstructed image of the silicon article, one or more anomalies defined within the silicon article are identified.
G01J 5/02 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique - Détails structurels
G01N 21/3563 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solides; Préparation des échantillons à cet effet
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
A laser alignment arrangement includes a first stage configured to structurally support a laser at a first longitudinal position of the laser, the first stage being configured to adjust the first longitudinal position of the laser in at least one direction orthogonal to an axis of the laser, and a second stage configured to structurally support the laser at a second longitudinal position of the laser, the second stage being configured to adjust the second longitudinal position of the laser in at least one direction orthogonal to the axis of the laser.
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
H01S 3/02 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure
H01S 3/00 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
An imaging sensor includes an imaging array with a plurality of pixels. A sub-set of the pixels are marker pixels configured to each provide a constant respective output value to embed an orientation and alignment marker in images produced with the imaging array. The marker pixels can be sparsely distributed across the imaging array.
G06T 1/00 - Traitement de données d'image, d'application générale
H04N 1/32 - Circuits ou dispositions pour la commande ou le contrôle entre l'émetteur et le récepteur
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
A multimode pixel of a pixel array is provided. The multimode pixel includes a photodetector, an image sensing circuit, a pulse detection circuit, and an image readout path coupled between the image sensing circuit and at least one readout conductor of the pixel array to transmit image signals from the image sensing circuit to the at least one readout conductor. The multimode pixel further includes a pulse readout path different from the image readout path, wherein the pulse readout path is coupled between the pulse detection circuit and the at least one readout conductor to transmit pulse data from the pulse detection circuit to the at least one readout conductor, and wherein the image readout path is controlled independently from the pulse readout path.
A method of enhancing an image includes constructing an input histogram corresponding to an input image received at a focal plane array, the input histogram representing a pixel intensity distribution corresponding to the input image and performing an analytical operation on the input histogram to produce a modified cumulative distribution, wherein the analytical operation is a function of camera temperature. The input image is transformed using the modified cumulative distribution to produce an enhanced output image corresponding to the input image, wherein at least a portion of the input image is enhanced in the output image. In addition to or in lieu of the non-linear operation, the binning edges of the input histogram can be adjusted based on at least one of camera temperature and sensitivity state to construct an adjusted cumulative distribution.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
G06T 5/40 - Amélioration ou restauration d'image en utilisant des techniques d'histogrammes
A digital communication interface includes a deserializer module, a gearbox module, and a parallel communication channel connecting the gearbox module to the deserializer module. The deserializer module has a fixed deserialization factor. The gearbox module has a temporal translation factor to change bit-length of words received through the parallel communication channel to bit-length suitable for a downstream data path.
H03M 9/00 - Conversion parallèle/série ou vice versa
G06F 5/06 - Procédés ou dispositions pour la conversion de données, sans modification de l'ordre ou du contenu des données maniées pour modifier la vitesse de débit des données, c. à d. régularisation de la vitesse
G06F 13/38 - Transfert d'informations, p.ex. sur un bus
H04L 7/04 - Commande de vitesse ou de phase au moyen de signaux de synchronisation
66.
Image-based detection and diagnosis of diastasis recti
A method for diagnosing a condition of a subject includes imaging an abdominal area of the subject to obtain one or more images of the abdominal area. Separation between rectus abdominis muscles in the abdominal area is located from the one or more images. Distance of the separation between the rectus abdominis muscles is quantified. The results of the quantified distance and one or more images are outputted on one or more display units.
A61B 5/00 - Mesure servant à établir un diagnostic ; Identification des individus
A61B 5/103 - Dispositifs de mesure pour le contrôle de la forme, du dessin, de la dimension ou du mouvement du corps ou de parties de celui-ci, à des fins de diagnostic
H04N 5/33 - Transformation des rayonnements infrarouges
A61B 5/107 - Mesure de dimensions corporelles, p.ex. la taille du corps entier ou de parties de celui-ci
G01N 21/359 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge proche
G01N 21/3563 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solides; Préparation des échantillons à cet effet
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
A lens cover includes a housing defining an optical aperture. A pair of opposed lens cover blades are each pivotally mounted to the housing at a common pivot point. A biasing member biases the blades apart from one another about the pivot point to uncover the optical aperture in an open position. A pair of magnetic members is included, each magnetic member being mounted to a respective one of the blades to bias the blades together to cover the optical aperture in a closed position.
G02B 26/02 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander l'intensité de la lumière
G03B 11/04 - Parasoleils ou couvercles pour évincer la lumière indésirable sur les objectifs, viseurs ou auxiliaires de mise au point
A method of controlling FPA system stabilization includes calculating FPA adjustments as a function of FPA temperature and adjusting a TEC set point to assist the FPA adjustments in attaining a predetermined level of FPA performance. Adjusting the TEC set point can include adjusting the TEC set point as a function of at least one of ambient temperature, FPA temperature, or disparity between the predetermined level of FPA performance and a level of FPA performance obtainable by calculating the FPA adjustments as a function of FPA temperature alone without adjusting the TEC set point.
A method of image-based quantification for allergen skin reaction includes imaging an area of skin that has been subject to a skin-prick test to produce one or more images of the area. The method includes identifying regions of wheal and/or flare in the one or more images of the area and quantifying weal and/or flare indicators based on the regions identified. The method also includes outputting results of the quantified wheal and/or flare indicators indicative of quantified allergen skin reaction.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
A method of image-based quantification for allergen skin reaction includes imaging an area of skin that has been subject to a skin-prick test to produce one or more images of the area. The method includes identifying regions of wheal and/or flare in the one or more images of the area and quantifying weal and/or flare indicators based on the regions identified. The method also includes outputting results of the quantified wheal and/or flare indicators indicative of quantified allergen skin reaction.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
A method of determining the composition of a polymeric body includes applying electromagnetic radiation to the polymeric body, modulating the electromagnetic radiation using a tagant disposed within a polymer composition forming the polymeric body, and receiving the modulated electromagnetic radiation from the tagant at an infrared detector. The electromagnetic radiation received from the tagant has a signature corresponding to the polymer composition forming the polymeric body. A method of making a polymeric body and system for determining composition of a polymeric body are also described.
G01J 5/02 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique - Détails structurels
C08K 11/00 - Emploi d'ingrédients de constitution inconnue, p.ex. produits de réaction non définis
G01N 21/25 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
C08J 3/20 - Formation de mélanges de polymères avec des additifs, p.ex. coloration
G01N 21/31 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique
G01N 21/63 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité optiquement
C08J 3/22 - Formation de mélanges de polymères avec des additifs, p.ex. coloration en utilisant les techniques des charges mères
G01N 21/3563 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solides; Préparation des échantillons à cet effet
A wavefront sensing pixel is provided. The wavefront sensing pixel includes a low-pass filter filtering a charge signal from a photodetector and outputting a control signal when low-frequency signals are detected in the charge signal, and a control device to control flow of the charge signal past the control device based on whether a low-frequency signal is detected in the charge signal. The wavefront sensing pixel further includes a low-frequency signal path that receives a flow of signals that flow past the control device, and a high-frequency signal path independent of the low-pass filter and the control device, the high-frequency signal path receiving high-frequency signals included in the charge signal.
H04N 3/14 - TRANSMISSION D'IMAGES, p.ex. TÉLÉVISION - Détails des dispositifs de balayage des systèmes de télévision; Leur combinaison avec la production des tensions d'alimentation par des moyens non exclusivement optiques-mécaniques au moyen de dispositifs à l'état solide à balayage électronique
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
G01J 9/00 - Mesure du déphasage des rayons lumineux; Recherche du degré de cohérence; Mesure de la longueur d'onde des rayons lumineux
73.
Enhanced pixel for multiband sensing including a signal path to receive a flow of signals flowing through a control device
An imaging pixel including a control device to control flow of a charge signal from a photodetector. The control device has a variable impedance that varies in response to frequency of an input signal, the control device being biased to permit signals to flow through the control device dependent on the frequency of signals being output by the photodetector. The imaging pixel further includes a low-frequency signal path that receives a flow of signals that flow through the control device, and a high-frequency signal path independent of the low-frequency signal path and the control device, the high-frequency signal path receiving high-frequency signals included in the charge signal.
An imaging pixel is provided. The imaging pixel includes a photodetector that outputs charge signals in response to incident light and laser pulses and a high-frequency path. A detector biasing circuit is further provided that biases high-frequency signals of the charge signals that are associated with the laser pulses to follow the high frequency path. The detector biasing circuit effectively filters low-frequency signal components of the charge signals from following the high-frequency path.
A method of identifying at least one target includes receiving a series of images over time of pulsed energy reflected from the at least one target, each image including a plurality of pulses related to different first and second pulse codes, detecting the pulses in an image of the received images, and outputting pulse detection information including XY coordinates and arrival time information associated with the respective detected pulses. The method further includes associating the pulse detection information with the first and second pulse codes based on the arrival time information, and generating output position information for the at least one target in space that indicates output positions for the at least one target based on the XY coordinates and being associated with the corresponding first and second pulse codes.
An imaging assembly includes a base member defining an expansion chamber therein, the base member defining a gas inlet for receiving a compressed gas and a gas outlet for expelling expanded gas, and a focal plane array assembly mounted to the base member including a sensor and a lens.
An imaging and pulse detection (IPD) pixel array includes a plurality of imaging pixels arranged in a plurality of rows and columns. Each imaging pixel includes a respective photodetector that outputs signals in response to incident light and input laser pulses. The signals include imaging signals that correspond to the incident light and pulse signals that correspond to the input laser pulses. The IPD array further includes an isolation circuit associated with each of the respective imaging pixels, each isolation circuit outputting filtered output pulse signals in response to receiving the signals from the associated imaging pixel, the filtered output pulse signals corresponding to the pulse signals. The IPD array further includes a single pulse detection circuit that toggles between a charged and uncharged state corresponding to a pulse being received from at least one of the isolation circuits.
H04N 3/14 - TRANSMISSION D'IMAGES, p.ex. TÉLÉVISION - Détails des dispositifs de balayage des systèmes de télévision; Leur combinaison avec la production des tensions d'alimentation par des moyens non exclusivement optiques-mécaniques au moyen de dispositifs à l'état solide à balayage électronique
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
H04N 5/357 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit
A leakage mitigation circuit is provided. The leakage mitigation circuit includes an inverter coupled to a storage node, wherein the storage node receives a signal output by an imaging pixel having a first voltage level to be stored. The inverter inverts the signal to a second voltage level. A single transistor coupled to the inverter and the storage node inverts the signal output by the inverter to the first level to hold the signal at the storage node to its original level. A self-biased device coupled to the inverter lowers current disturbance related to the storage node and increase threshold voltage at which fluctuation of the level of the signal at the storage node causes the signal to be inverted by the inverter.
H04N 3/14 - TRANSMISSION D'IMAGES, p.ex. TÉLÉVISION - Détails des dispositifs de balayage des systèmes de télévision; Leur combinaison avec la production des tensions d'alimentation par des moyens non exclusivement optiques-mécaniques au moyen de dispositifs à l'état solide à balayage électronique
H04N 5/359 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué aux porteurs de charge en excès générés par l'exposition, p.ex. bavure, tache, image fantôme, diaphonie ou fuite entre les pixels
H03K 17/14 - Modifications pour compenser les variations de valeurs physiques, p.ex. de la température
H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c. à d. par application combinée d'une limitation et d'un seuil
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 5/335 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS]
A method of normalizing FPA system gain and correcting pixel non-uniformity for varying temperature includes determining an FPA temperature, calculating an FPA system gain as a function of the FPA temperature, and applying the FPA system gain at the FPA temperature to condition output of the FPA to produce temperature independent image data. The method also includes calculating a non-uniformity correction map on a pixel by pixel basis for the FPA, wherein non-uniformity correction for each pixel is a function of the FPA temperature, and applying the non-uniformity correction map to the imaging data from the FPA to produce temperature dependent non-uniformity corrected image data. An imaging system includes a focal plane array (FPA), a temperature sensor operatively connected to measure temperature of the FPA, and a module configured for system gain correction and non-uniformity correction as described above.
H04N 5/365 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
G01J 5/00 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique
H05B 1/02 - Dispositions de commutation automatique spécialement adaptées aux appareils de chauffage
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/112 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par un fonctionnement par effet de champ, p.ex. phototransistor à effet de champ à jonction
An imaging system includes a housing having a lens that defines a first optical axis. A sensor is within the housing offset from the first optical axis. A digital display is within the housing offset from the first optical axis opposite from the sensor across the first optical axis. A second optical axis is defined between the sensor and the digital display. A polarized beam splitter is within the housing at an intersection of the first and second optical axes to allow a portion of incoming photons to pass and continue along the first optical axis for direct-eye viewing and to redirect another portion of incoming photons to the sensor along the second optical axis.
A method of normalizing FPA system gain for varying temperature includes determining an FPA temperature and calculating an FPA system gain as a function of the FPA temperature, system gain for the FPA at a reference temperature, and empirically derived coefficients. The method also includes applying the FPA system gain at the FPA temperature to condition output of the FPA to produce temperature independent image data. An imaging system includes a focal plane array (FPA). A temperature sensor is operatively connected to measure temperature of the FPA. A module is operatively connected to the FPA and temperature sensor to calculate FPA system gain for the FPA as described above, and to apply the FPA system gain to condition output of the FPA to produce temperature independent image data. There need be no temperature control device, such as a thermoelectric cooling device, connected for temperature control of the FPA.
G01J 1/42 - Photométrie, p.ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01J 5/00 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique
H05B 1/02 - Dispositions de commutation automatique spécialement adaptées aux appareils de chauffage
H04N 5/33 - Transformation des rayonnements infrarouges
H04N 5/374 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
G01J 5/16 - Aménagements relatifs à la jonction froide; Compensation de l'influence de la température ambiante ou d'autres variables
G01J 5/20 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p.ex. des dispositifs photoconducteurs
G01J 5/10 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations
A method of correcting pixel non-uniformity for varying temperature includes determining an FPA temperature and calculating a non-uniformity correction map on a pixel by pixel basis for the FPA, wherein the non-uniformity correction for each pixel is a function of the FPA temperature and empirically derived coefficients. The method also includes applying the non-uniformity correction map at the FPA temperature to condition output of the FPA to produce temperature dependent non-uniformity corrected image data. An imaging system includes a focal plane array (FPA). A temperature sensor is operatively connected to measure FPA temperature. A module is operatively connected to the FPA and temperature sensor to calculate and apply a non-uniformity correction map as described above. There need be no temperature control device for the FPA. The FPA can include a buffered current mirror pixel architecture, and can include an InGaAs material for infrared imaging.
H04N 5/217 - Circuits pour la suppression ou la diminution de perturbations, p.ex. moiré ou halo lors de la production des signaux d'image
H04N 5/30 - Transformation d'informations lumineuses ou analogues en informations électriques
H04N 5/365 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit à motif fixe, p.ex. non-uniformité de la réponse
H04N 5/33 - Transformation des rayonnements infrarouges
A photodiode includes a cap layer defining an inboard side and an outboard side. A plurality of pixels are formed in the cap layer extending from the inboard side to the outboard side. At least a portion of the cap layer is defined in between the pixels. A metal barrier is in between the pixels and is operatively connected to the inboard side of the cap layer in between the pixels to reflect light rays into the cap layer reducing the leakage of photons between the pixels.
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/102 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface
H01L 27/148 - Capteurs d'images à couplage de charge
H01L 31/00 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
A sensor includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. An imaging camera system includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals, the InGaAs photodetector including an array of photodetector pixels each configured to convert infrared radiation into electrical signals for imaging. At least one optical element is optically coupled to the InGaAs photodetector to focus an image on the array. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. A ROIC is operatively connected to the array to condition electrical signals from the array for imaging.
H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
H01L 27/144 - Dispositifs commandés par rayonnement
H01L 31/109 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à hétérojonction
A method of imaging includes monitoring a field of view with a first imaging sensor of a multiple channel imaging system and activating a second component of the imaging system from a stand by state to an active state upon detection of a change in the field of view of the first imaging sensor. The second component can include a second imaging sensor. The second imaging sensor can have a field of view overlapping with the field of view of the first imaging sensor. The first imaging sensor can be configured for imaging in a first spectral range, wherein the second imaging sensor is configured for imaging in a second spectral range that is different from the first spectral range. The first and second spectral ranges can be overlapping or non-overlapping.
A system for parallax correction includes a rotatable focus adjuster having a longitudinal axis. A lens retainer is engaged with the focus adjuster. A first lens is housed within the lens retainer aligned with the longitudinal axis. A second lens is positioned parallel to the first lens within the lens retainer. The second lens is configured to move laterally with respect to the first lens to correct for parallax between the first and second lenses.
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 7/105 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles avec mécanisme de mise au point ou pour faire varier le grossissement par déplacement axial relatif de plusieurs lentilles, p.ex. lentilles d'objectif à distance focale variable avec des lentilles mobiles spécialement adaptées pour la mise au point rapprochée
89.
Imaging systems with digital micromirror devices (DMD)
An imaging system includes an imager housing having a primary aperture defining an optical axis. A primary lens is disposed over the primary aperture. A first focal plane array (FPA) is within the imager housing. A second FPA is within the imager housing. A digital micro-mirror device (DMD) is angled with respect to the optical axis and optically coupled to the primary lens to selectively reflect light entering the primary aperture to at least one of the first FPA or the second FPA.
A focal plane array assembly includes a readout integrated circuit with a contact array surface, a photodiode array with a contact array surface facing the readout integrated circuit contact array surface, and an anisotropic conductive film disposed between contact array surfaces. The anisotropic conductive film includes conductive bodies that interconnect the photodiode array with the readout integrated circuit and an adhesive that couples the photodiode array to the readout integrated circuit.
An imaging and pulse detection pixel and an array of imaging and pulse detection pixels are provided. Each imaging and pulse detection pixel includes an optical detection device connected directly to a first and second transistor only, a pulse detection circuit that operates on the signal read out from the optical detection device and outputs a pulse detection output signal suitable for detection of pulses, and an imaging circuit that operates on a signal read out from the optical detection device and outputs an image output signal suitable for generation of an image. A terminal of the optical detection device is directly connected to only a gate terminal of the first transistor and a non-gate terminal of the second transistor.
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
An imager is provided that includes an integrated circuit. The integrated circuit includes at least one metal layer, a signal line extending in a first direction, and a pixel cell. The pixel cell includes imaging pixels and a metal interconnect. The imaging pixels include first, second, third, and fourth imaging pixels, arranged in two rows and two columns, each imaging pixel having a metal-insulator-metal (MiM) capacitor disposed on the at least one metal layer, the first and second imaging pixels being traversed by the signal line to receive signals from the signal line. The metal interconnect extends in a second direction different than the first direction and is coupled to the signal line and the third imaging pixel to transmit the signals to the third imaging pixel. The third imaging pixel is adjacent to the first imaging pixel and is disposed in a different column or row than the second imaging pixel.
A system for parallax correction includes a housing of a camera having a channel perpendicular to an optical axis of the camera. A lens enclosure is within the housing and includes a tab slideable along the channel. A first lens is positioned within the lens enclosure having a first focal plane array. A second lens is positioned within the lens enclosure having a second focal plane array. The second focal plane array is coupled to a pin disposed within the tab of the housing. The tab is configured to direct the pin to slide perpendicular to the optical axis along the channel to move the second focal plane array laterally with respect to the first focal plane array to correct for parallax between the first and second lenses.
G02B 7/06 - Mise au point de jumelles binoculaires
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
G03B 17/12 - Corps d'appareils avec moyens pour supporter des objectifs, des lentilles additionnelles, des filtres, des masques ou des tourelles
G03B 17/48 - APPAREILS OU DISPOSITIONS POUR PRENDRE DES PHOTOGRAPHIES, POUR LES PROJETER OU LES VISIONNER; APPAREILS OU DISPOSITIONS UTILISANT DES TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; LEURS ACCESSOIRES - Parties constitutives des appareils ou corps d'appareils; Leurs accessoires prévus pour être combinés à d'autres appareils photographiques ou optiques
H04N 5/247 - Disposition des caméras de télévision
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
94.
Pixel master-slave photodiode bias control amplifier
A pixel master-slave photodiode bias control amplifier system is disclosed. The pixel master-slave photodiode bias control amplifier system may include a master pixel and one or more slave pixels. The slave pixel(s) may be connected to a portion of the master pixel. In this manner, components may be shared between/among the master pixel and the slave pixel(s); thus, for example, optimizing the component count of the pixel master-slave photodiode bias control amplifier system and the size occupied by the pixel master-slave photodiode bias control amplifier system.
H01J 40/14 - Circuits non adaptés à une application particulière ou tube et non prévus ailleurs
H03F 3/08 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs commandés par la lumière
H04N 5/369 - Transformation d'informations lumineuses ou analogues en informations électriques utilisant des capteurs d'images à l'état solide [capteurs SSIS] circuits associés à cette dernière
A photosensitive pixel with gain stage is disclosed. The photosensitive pixel with gain stage may receive an input light stimulus and output a corresponding output voltage in response to the input light stimulus. The output voltage may correspond linearly to the magnitude of the input light stimulus over a linear operating region and logarithmically to the magnitude of the input light stimulus over a logarithmic operating region. In this manner, the photosensitive pixel with gain stage may be both sensitive to input light stimuli over the linear operating region and may exhibit dynamic range enabling non-saturated response to input light stimuli over the logarithmic operating region.
H01J 43/00 - Tubes à émission secondaire; Tubes multiplicateurs d'électrons
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
96.
Image lag mitigation for buffered direct injection readout with current mirror
A circuit having a buffered direct injection (BDI) module is provided for image lag mitigation. The BDI module includes an optical detector coupled to a buffer. The buffer has a pixel amplifier which includes no more than two transistors. The BDI module includes a first current mirror coupled to the BDI module. The first current mirror generates a modulating current based on the output of the optical detector. The BDI module further includes a second current mirror coupled to the first current mirror. The second current mirror is configured to generate either an amplified or attenuated photocurrent operable to optimize an imaging time and scene brightness of the optical detector. The BDI module further includes a reset circuit, coupled to the second current mirror, and being configured to reset an integration capacitor which integrates an image signal based on the output of the optical detector.
H01L 31/00 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 5/33 - Transformation des rayonnements infrarouges
A laser designator pulse detector includes an InGaAs photodetector configured to convert laser signals into electrical signals. A Read Out Integrated Circuit (ROIC) is operatively connected to the InGaAs photodetector to condition electrical signals from the InGaAs photodetector. The ROIC can be operatively connected to a peripheral device including one or more modules configured to process signals from the ROIC and provide pulse detection, decoding, and tracking. In another aspect, a laser designator pulse detector includes a two-dimensional array of photodetectors configured to convert laser signals into electrical signals. A ROTC as described above is operatively connected to the two-dimensional array of photodetectors.
A pulse repetition frequency detector, tracker, and decoder includes a two-dimensional InGaAs FPA of photodetectors configured to convert laser signals into electrical signals. A ROIC is operatively connected to the InGaAs FPA to condition electrical signals from the InGaAs FPA. A module is operatively connected to the ROIC to decode pulsed codes in the conditioned electrical signals and to provide output for tracking decoded laser spots in two-dimensional space. In another aspect, an imaging device includes an imager with an imaging FPA operatively connected to a first ROIC for imaging. A pulse repetition frequency detector, tracker, and decoder including a second ROIC as described above, is operatively connected to the first ROIC. The first and second ROICs are operatively connected to correlate the position of decoded laser spots in images from the imaging FPA.
An optical device is disclosed. The optical device may generate light for projection into a user's eye. The optical device may have a switch connected to an eyecup. When the eyecup is pressed against the user's face, the switch may be actuated, signaling the optical device to generate light for projection into a user's eye. When the eyecup is not pressed against the user's face, the switch may be unactuated, signaling the optical device to cease to generate light for projection into a user's eye. Various electronics of the optical device may remain active, for example, a controller may continue to generate an image for representation by the generated light, but the optical device may refrain from generating the light, such as by a display. In this manner, inadvertent light leakage may be ameliorated, and power consumption by the optical device lessened when the eyecup is not depressed.
H04N 5/222 - TRANSMISSION D'IMAGES, p.ex. TÉLÉVISION - Détails des systèmes de télévision Équipements de studio
G03B 17/00 - APPAREILS OU DISPOSITIONS POUR PRENDRE DES PHOTOGRAPHIES, POUR LES PROJETER OU LES VISIONNER; APPAREILS OU DISPOSITIONS UTILISANT DES TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; LEURS ACCESSOIRES - Parties constitutives des appareils ou corps d'appareils; Leurs accessoires
H04N 5/232 - Dispositifs pour la commande des caméras de télévision, p.ex. commande à distance
G02B 23/12 - Télescopes ou lunettes d'approche, p.ex. jumelles; Périscopes; Instruments pour voir à l'intérieur de corps creux; Viseurs; Pointage optique ou appareils de visée avec des moyens pour renverser ou intensifier l'image
A pulse detector amplifier is disclosed. The pulse detector amplifier may have a detection switching leg that receives an input energy pulse. The pulse detector may have a mirror fast trigger including a trigger node and controlling a mirrored switching leg. The detection switching leg may trigger the trigger node in response to the input energy pulse. The pulse detector amplifier may also have a mirrored switching leg that controlled by the trigger node. The mirrored switching leg may control a voltage and/or current on the output node responsive to the input energy pulse. Thus, the pulse detector may generally include a cascode architecture, with a mirror fast trigger (which may include a FET) between the mirrored legs of the amplifier and enhancing the rapid triggering of the amplifier output. Thus the pulse detector may be power efficient, may have a small part count, and may be sensitive.
H03F 3/08 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs commandés par la lumière
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