H02H 7/085 - Circuits de protection de sécurité spécialement adaptés pour des machines ou appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou ligne, et effectuant une commutation automatique dans le cas d'un chan pour moteurs dynamo-électriques contre une charge excessive
2.
METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT USING LASER PINNING PROCESS
In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Methods and apparatus for a device that includes a circuit, such as a memory cell, and an isolation structure to electrically isolate the circuit cell. The isolation structure can include a p-type substrate, a first series of p-type material extending to the p-type substrate, and a second series of p-type material extending to the p-type substrate. The first series of p-type material, the p-type substrate, and the second series of p-type material surrounds a first side, a second side, and a bottom of the circuit cell to electrically isolate the circuit cell with continuous p-type material. In some embodiments, the first series of p-type material comprises p-type well regions. In some embodiments, the first series of p-type material comprises deep trench isolation.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 27/11524 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec grilles flottantes caractérisées par la région noyau de mémoire avec transistors de sélection de cellules, p.ex. NON-ET
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
Provided is a semiconductor switch device which performs square integration of load current and wire temperature estimation at low cost and with high precision, while reducing resources required for accurate wire temperature estimation. A semiconductor switch device 200 according to one or more examples of the present invention includes: switch units 206, 201, and 202 that are connected between a power source 300 connected from the outside of the semiconductor switch device 200 and a load 400 through a wire, and that turn on/off power supply to the load; load current detection units 203 and 204 that detect load current flowing through the switch units 206, 201, and 202; and a square operation unit 205 that outputs a squared value of a load current value detected by the current detection units 203 and 204. The switch unit 206 receives a control command from outside and turns on/off power supply to the load on the basis of the control command.
H02H 3/08 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à une surcharge
H02H 3/087 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à une surcharge pour des systèmes à courant continu
Methods and apparatus receiving data at a first time from at least one sensor, determining a parameter from the received data for the first time, estimating the parameter for a future time based on the data for first time, and outputting the estimated parameter for the future time to a receiving device. In some embodiments, an IC package can process the received data to generate the estimated parameter for the future time. The IC package may transmit the estimated parameter using a particular protocol. In some embodiments, the receiving device can treat the estimated parameter as real-time data.
G01D 3/02 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe avec dispositions pour changer ou corriger la fonction de transfert
G01D 5/244 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions
G01K 1/00 - MÉTROLOGIE; TESTS ÉLÉMENTS THERMOSENSIBLES NON PRÉVUS AILLEURS - Détails des thermomètres non spécialement adaptés à des types particuliers de thermomètres
G01P 3/00 - Mesure de la vitesse linéaire ou angulaire; Mesure des différences de vitesses linéaires ou angulaires
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
H04Q 9/00 - Dispositions dans les systèmes de commande à distance ou de télémétrie pour appeler sélectivement une sous-station à partir d'une station principale, sous-station dans laquelle un appareil recherché est choisi pour appliquer un signal de commande ou
Methods and apparatus receiving data at a first time from at least one sensor, determining a parameter from the received data for the first time, estimating the parameter for a future time based on the data for first time, and outputting the estimated parameter for the future time to a receiving device. In some embodiments, an IC package can process the received data to generate the estimated parameter for the future time. The IC package may transmit the estimated parameter using a particular protocol. In some embodiments, the receiving device can treat the estimated parameter as real-time data.
A semiconductor device according to one or more embodiments may include a first semiconductor region, a second semiconductor region arranged on the first semiconductor region, a third semiconductor region arranged on the second semiconductor region, a first trench penetrating the second semiconductor region from the third semiconductor region and reaching the first semiconductor region, a first main electrode arranged on the second semiconductor region via a first insulating film, field electrodes arranged via second insulating films in a second trenches that are deeper than the first trench and reach the first semiconductor region. The first main electrode may be arranged between the field electrodes. The field electrodes may be arranged alternately, and the field electrodes that are alternately adjacent to each other may be arranged so that the field electrodes partially overlap with adjacent field electrodes in an alignment direction of the arranging field electrodes in a plan view.
In one aspect, a sensor includes a first metal layer portion and a second metal layer portion separated by an insulator material; a conductive material layer in electrical contact with the first metal layer portion and the second metal layer portion; and a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive material layer. A first current is configured to flow from the first metal layer portion, through the conductive material layer, to the second metal layer portion, and a second current is configured to flow from the first metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
A first coupling capacitor is electrically connected in series with an input side reactor. A positive rectifier diode is electrically connected in series with the first coupling capacitor. A positive output side reactor is electrically connected to a connecting point of the first coupling capacitor and the positive rectifier diode and a ground potential. A first smoothing capacitor is electrically connected to the positive rectifier diode and a ground potential. A second coupling capacitor is electrically connected in series with the first coupling capacitor. A negative rectifier diode is electrically connected to the positive output side reactor and the second coupling capacitor. A negative output side reactor is electrically connected to a connecting point of the second coupling capacitor and the negative rectifier diode. A second smoothing capacitor is electrically connected to the negative rectifier diode, the ground potential, and the negative output side reactor.
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
10.
FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNELING MAGNETORESISTANCE ELEMENT USING TWO HARD MASKS
In one aspect, a method includes depositing magnetoresistance (MR) layers of a MR element on a semiconductor structure; depositing a first hard mask on the MR layers; depositing and patterning a first photoresist on the first hard mask using photolithography to expose portions of the first hard mask; etching the exposed portions of the first hard mask; etching a portion of the MR layers using the first hard mask; depositing a second hard mask on a first capping layer; depositing and patterning a second photoresist on the second hard mask using photolithography to expose portions of the second hard mask; etching the exposed portions of the second hard mask; etching the MR element using the second hard mask; etching portions of the first hard mask down to a top MR layer of the MR element; and depositing a conducting material on the top MR layer to form an electroconductive contact.
H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01F 41/34 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer un matériau conducteur, isolant ou magnétique sur une pellicule magnétique selon des configurations particulières, p.ex. par lithographie
A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.
An excitation current detection circuit is disclosed. A transformer comprises a primary winding, an auxiliary winding, and a secondary winding. A first voltage detector detects a positive voltage of an auxiliary winding voltage. A second voltage detector detects a negative voltage of the auxiliary winding voltage. A first voltage controlled oscillator generates a first clock with a frequency proportional to the positive voltage during a period when the auxiliary winding voltage is the positive voltage. A second voltage controlled oscillator generates a second clock with a frequency proportional to the negative voltage during a period when the auxiliary winding voltage is the negative voltage. A counter outputs a counter value, which is added in one of cycles of the first clock and the second clock and subtracted in the other cycle of the first clock and the second clock as a detected value of an excitation current.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
13.
LEADLESS CURRENT SENSOR PACKAGE WITH HIGH ISOLATION
A sensor package comprising a lead frame, a current sensor die, and an interposer. The lead frame includes: (i) a primary conductor, (ii) a plurality of secondary leads, and (iii) a layer of dielectric material that is disposed between the primary conductor and the plurality of secondary leads. The current sensor die includes one or more sensing elements. The current sensor die is configured to measure a level of electrical current through the primary conductor of the lead frame. The interposer is disposed over the layer of dielectric material. The interposer includes a plurality of conductive traces that are configured to couple each of a plurality of terminals of the current sensor die to a respective one of the plurality of secondary leads.
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 1/11 - Eléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 3/30 - Assemblage de circuits imprimés avec des composants électriques, p.ex. avec une résistance
Configurable variable-length shift register circuits include a group of flip-flops connected in a serial configuration. The plurality of flip-flops is connected to a serial data-in line and a clock line. Each flip-flop can include a data input, a clock input configured to receive a clock signal from the clock line, and a data output. The plurality of flip-flops can include a serial data-out line. The circuit includes a plurality of multiplexers connected to the plurality of flip-flops to enable a desired number of flip-flops for an application. A nonvolatile memory can be connected to the plurality of multiplexers and configured to receive a register-length indication, where the register-length indication corresponds to a selected number of flip-flops selected for enablement for a given application.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
H03K 5/135 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés par l'utilisation de signaux de référence de temps, p.ex. des signaux d'horloge
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 19/00 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage
A current sensor integrated circuit package includes a primary conductor having an input portion and an output portion, both with reduced area edges. Secondary leads each have an exposed portion and an elongated portion that is offset with respect to the exposed portion. A semiconductor die is disposed adjacent to the primary conductor on an insulator portion and at least one magnetic field sensing element is supported by the semiconductor die. A package body includes a first portion enclosing the semiconductor die and a portion of the primary conductor and a second portion enclosing the elongated portion of the plurality of secondary leads. The first package body portion has a first width configured to expose the input and output portions of the primary conductor and the second package body portion has a second width between a first and second package body side edges that is larger than the first width.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
A magnetic field sensor includes a magnetic field sensing element to generate a magnetic field signal indicative of a sensed magnetic field, a modulator to modulate the magnetic field signal at a chopping frequency, a front end amplifier coupled to receive the magnetic field signal and generate an amplified signal, and a demodulator configured to demodulate the amplified signal at the chopping frequency. The sensor further includes a low pass filter to process the amplified signal and generate a low pass filtered signal and a Schmitt trigger circuit. The Schmitt trigger circuit includes a comparator having a first input coupled to receive the low pass filtered signal, a second input coupled to receive a reference signal, and an output at which a comparator output signal is provided. The comparator is configured to perform a plurality of comparisons within a chopping time period that is the inverse of the chopping frequency.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
Rapid-data-transfer sensor arrays include a controller and a plurality of sensor integrated circuits (ICs) connected in series and configured to periodically take measurements and provide measurement data to the controller as serial data. A sensor IC includes a transducer, a shift register, a serial-data-in (SDI) pin, a serial-data-out (SDO) pin, a clock pin, and a bi-directional start/done (ST/DN) pin. The sensor IC includes a power regulation circuit configured to selectively supply power for a sleep mode and an active mode for recording data and an internal shift register. When finished with the measurement, the sensor IC is configured to provide measurement data to the shift register for transfer to the controller. The controller is configured to initiate serial transfer of data from each of the shift registers of the first plurality of sensor ICs to the controller. Examples include a 2D array.
H03K 19/00 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion
H03K 19/17736 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants disposés sous forme matricielle - Détails structurels des ressources de routage
G06F 13/42 - Protocole de transfert pour bus, p.ex. liaison; Synchronisation
H03K 19/17784 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants disposés sous forme matricielle - Détails structurels pour l'adaptation des paramètres physiques pour la tension d'alimentation
Auto-calibrating current sensor integrated circuits (ICs) are configured for mounting at a position relative to a conductor. The auto-calibrating current sensor ICs can include a plurality of magnetic field sensing elements disposed at different locations within the integrated circuit, respectively, and can be configured to measure a magnetic field produced by a current carried by the conductor. The auto-calibrating sensors can include an electromagnetic model of the IC and the conductor. The model can be operative to determine a magnetic field at points in space due to a given current in the conductor at a known location of the conductor from the IC, and also the inverse situation of determining an unknown current and/or location of the conductor based on measurements of a magnetic field at known locations in space due to an unknown current in the conductor. Related auto-calibration methods are also described.
G01R 35/00 - Test ou étalonnage des appareils couverts par les autres groupes de la présente sous-classe
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
19.
CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER DUSTING
Methods and apparatus for a magnetoresistive (MR) sensor a free layer with a thickness of the CoFeB material to produce out-of-plane sensing for the sensor and a reference layer magnetically coupled to the free layer. A dusting layer of an oxide material is disposed on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide layer and the free layer for a desired sensitivity for the sensor.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p.ex. superréseaux à structure nanométrique
Magnetoresistive element including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization and a tunnel barrier layer between the reference layer and the sense layer; the magnetoresistive element being configured to measure an external magnetic field oriented substantially perpendicular to the plane of the layers. The reference magnetization being oriented substantially perpendicular to the plane of the reference layer. The sense magnetization including a vortex configuration in the absence of an external magnetic field, the vortex configuration being substantially parallel to the plane of the sense layer and having a vortex core magnetization along an out-of-plane axis substantially perpendicular to the plane of the sense layer.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
21.
MAGNETORESISTIVE SENSOR ELEMENT HAVING A WIDE LINEAR RESPONSE AND ROBUST NOMINAL PERFORMANCE AND MANUFACTURING METHOD THEREOF
A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01F 1/00 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques
Auto-calibrating current sensor integrated circuits (ICs) are configured for mounting at a position relative to a conductor. The auto-calibrating current sensor ICs can include a plurality of magnetic field sensing elements disposed at different locations within the integrated circuit, respectively, and can be configured to measure a magnetic field produced by a current carried by the conductor. The auto-calibrating sensors can include an electromagnetic model of the IC and the conductor. The model can be operative to determine a magnetic field at points in space due to a given current in the conductor at a known location of the conductor from the IC, and also the inverse situation of determining an unknown current and/or location of the conductor based on measurements of a magnetic field at known locations in space due to an unknown current in the conductor. Related auto-calibration methods are also described.
G01R 35/00 - Test ou étalonnage des appareils couverts par les autres groupes de la présente sous-classe
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A current sensor IC includes a lead frame having a die attach pad and elongated leads extending in a single direction with respect to the die attach pad, a semiconductor die having a first surface attached to the die attach pad and a second, opposing surface supporting magnetic field sensing elements, and a non-conductive mold material. A first portion of the mold material encloses the semiconductor die and the die attach pad, a second portion of the mold material encloses a portion of the elongated leads, and the mold material further includes a wing structure between the first portion and the second portion. In assembly, the first portion of the mold material extends into a cutout through a current conductor and the wing structure abuts a surface of the conductor. The current sensor can implement differential sensing based on signals from at least two magnetic field sensing elements.
Methods and apparatus for a photodetector system including a photodetector having first and second terminals, wherein the photodetector is configured to generate a current in response to light. A first amplifier has a first input coupled to the first terminal of the photodetector to generate a first output voltage signal corresponding to the current generated by the photodetector. A second amplifier has a first input coupled to the second terminal of the photodetector to generate a second output voltage signal corresponding to the current generated by the photodetector. The first and second amplifiers can have different linear ranges to improve the total linear range of the detector system.
H03F 3/08 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs commandés par la lumière
H03F 1/18 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage réparti
25.
MAGNETIC TAMPER DETECTION AND DIAGNOSTICS FOR SMART SECURITY SYSTEMS
Magnetic field tampering detection and diagnostic systems are configured to detect a tampering event for an electronic security system or device. The magnetic field tampering detection system can include a memory; and a processor coupled to the memory and configured to receive a magnetic field measurement signal from one or more magnetic field sensors configured to detect a magnetic field incident on the security system or device, where the processor is configured to determine when the magnetic field measurement signal corresponds to a tampering event outside of a normal range of operation, and where the processor is configured to generate a response when a tampering event is determined to have occurred. The systems can perform remedial actions in response to detected tampering events.
A system, comprising a target, a first receiving coil array, and a second receiving coil array. The target includes: (i) a first array of conductive features that are arranged in a line or arc and separated from one another by voids, and (ii) a second array of conductive features that are arranged in a line or arc and separated from one another by voids, the conductive features in the first array being staggered with respect to the conductive features in the second array.; The first receiving coil array is configured to sense a first magnetic field that is associated with the first array of conductive features. The second receiving coil array is configured to sense a second magnetic field that is associated with the second array of conductive features.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p.ex. une armature mobile
A sensor system includes a signal sensing block including at least two sensing elements. Each of the at least two sensing elements is configured to generate an output that represents a first parameter associated with the sensor system. The sensor system also includes a data acquisition block configured to convert the outputs of the at least two sensing elements into digital data to be retrieved by a data retrieval block. The digital data is stored in one or more data registers of the data acquisition block. The sensor system also includes a data freeze block configured to cause the one or more data registers to refrain from updating with new data while the data retrieval block is retrieving the stored digital data.
G06F 9/52 - Synchronisation de programmes; Exclusion mutuelle, p.ex. au moyen de sémaphores
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
28.
PRINTED CIRCUIT BOARD GROUND PLANE OPTIMIZATION FOR CORELESS CURRENT SENSORS
A current sensor system includes a current sensor integrated circuit (IC) and a printed circuit board (PCB) having a ground plane with a feature configured to reduce an eddy current. The current sensor IC includes a lead frame comprising a die attach pad and at least one lead, a semiconductor die having a first surface attached to the die attach pad and a second, opposing surface, at least one magnetic field sensing element supported by the semiconductor die and configured to sense a current in a proximate primary conductor, and a non-conductive mold material enclosing the semiconductor die and a portion of the at least one lead. The PCB ground plane feature can take various forms such as a hole of a dimension larger than the current sensor IC, elongated cuts, or x-shaped cuts.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
In one aspect, a method includes depositing a capping layer on a semiconductor device structure. The semiconductor device includes a plurality of tunneling magnetoresistance (TMR) elements, a corresponding one hard mask on each TMR element, a metal layer, and a plurality of electroconductive vias directing connecting the TMR elements to the metal layer. The method further includes depositing an insulator on the capping layer, depositing a first photoresist on the insulator, patterning the first photoresist using photolithography to expose portions of the insulator, etching the exposed portions of the insulator and the hard masks to expose top surfaces of the TMR elements, stripping the first photoresist, and depositing a conducting material on the top surfaces of the TMR elements to form an electroconductive contact.
In one aspect, a Hall effect device includes an implantation layer; an epitaxial layer located above the implantation layer; a trench filled with a dielectric material and extending from a top surface of the epitaxial layer into the implantation layer and defining an enclosed region; a buried layer the epitaxial layer from the implantation layer within the enclosed region; and a contact pad located on the epitaxial layer. The trench reduces a current from the contact pad from traveling in a lateral direction orthogonal to a vertical direction and enables the current to travel in the vertical direction.
H01L 43/04 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails de dispositifs à effet Hall
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
31.
MOTOR CONTROLLER HAVING BEMF COMPENSATION FOR NOISE AND/OR VIBRATION REDUCTION
Methods and apparatus for compensating for non-sinusoidal BEMF signals in an electrical motor using amplitudes, phases and orders of BEMF harmonic components and amplitude of 1st harmonic of BEMF of the electrical motor. First and second corrective components for vd and vq of the d-q coordinate system for the motor can be generated from amplitudes of the BEMF harmonic components and the angles of the BEMF harmonic components orders of the BEMF harmonic components and amplitude of 1st harmonic of BEMF.
G05B 19/4155 - Commande numérique (CN), c.à d. machines fonctionnant automatiquement, en particulier machines-outils, p.ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'u caractérisée par le déroulement du programme, c.à d. le déroulement d'un programme de pièce ou le déroulement d'une fonction machine, p.ex. choix d'un programme
H02P 23/14 - Estimation ou adaptation des paramètres des moteurs, p.ex. constante de temps du rotor, flux, vitesse, courant ou tension
32.
DCDC CONVERTER, INTEGRATED CIRCUIT, AND TARGET VOLTAGE GENERATION CIRCUIT
A direct current to direct current converter is disclosed that controls an output voltage based on an error signal between a feedback voltage and a target voltage. A direct current to direct current converter according to one or more embodiments may include a temperature sensor, a reference voltage generator circuit that generates a reference voltage, a compensation calculator that calculates a compensation value from a temperature detected from the temperature sensor using a function of temperature, a compensator that corrects a target initial value by the compensation value to generate the target value, and a digital-to-analog converter that converts the target value to the target voltage based on the reference voltage.
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
An active clamp flyback converter includes a main switch, a primary winding that is electrically connected in series with the main switch, a clamp switch that is electrically connected to a connection point between the main switch and the primary winding, a clamp capacitor that is connected in series with the clamp switch, and a controller that outputs a first ON signal to control the main switch and a second ON signal to control the clamp switch during a period when the main switch is off. The controller outputs the second ON signal during a half cycle or more of a resonance period, in which the resonance current flowing in a resonance circuit comprising the clamp capacitor and a leakage inductance generated when the clam switch is turned on is limited by an excitation current of an excitation inductance of the primary winding.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
Electronic circuits and methods sense an electromagnetic property of a target, and transmit data packets that encode the property along with diagnostic messages while avoiding data loss due to truncation at high sensing speeds. Data address bits may be used to split messages across multiple data packets. Data bits may be combined into a unified header that takes less time to transmit than in prior communication protocols. The transmission duration of each data bit may be lowered, thereby increasing throughput. The receiving system may synchronize its own operation against these shortened data bits, increasing its speed. Error packets may be sent between data packets, thereby reducing time to respond to faults in safety-critical systems. And additional current levels may be used to increase the data information rate.
B60R 16/023 - Circuits électriques ou circuits de fluides spécialement adaptés aux véhicules et non prévus ailleurs; Agencement des éléments des circuits électriques ou des circuits de fluides spécialement adapté aux véhicules et non prévu ailleurs électriques pour la transmission de signaux entre des parties ou des sous-systèmes du véhicule
H04L 41/0681 - Configuration des conditions de déclenchement
H04L 67/12 - Protocoles spécialement adaptés aux environnements propriétaires ou de mise en réseau pour un usage spécial, p.ex. les réseaux médicaux, les réseaux de capteurs, les réseaux dans les véhicules ou les réseaux de mesure à distance
35.
MAGNETIC FIELD CURRENT SENSOR TO REDUCE STRAY MAGNETIC FIELDS
In one aspect, a magnetic field current sensor includes an annihilation detector. The annihilation detector includes an annihilation bridge that includes magnetoresistance elements. The annihilation detector also includes a current bridge that includes at least two of the magnetoresistance elements, a first comparator configured to compare an output signal from the annihilation bridge and a second comparator configured to compare an output signal from the current bridge. An output of the annihilation detector indicates whether an annihilation exists in one or more of the magnetoresistance elements using at least one of the outputs signals of the first and second comparators.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
36.
MAGNETIC FIELD CURRENT SENSOR TO REDUCE STRAY MAGNETIC FIELDS
In one aspect, a magnetic field current sensor includes an annihilation detector. The annihilation detector includes an annihilation bridge that includes magnetoresistance elements. The annihilation detector also includes a current bridge that includes at least two of the magnetoresistance elements, a first comparator configured to compare an output signal from the annihilation bridge and a second comparator configured to compare an output signal from the current bridge. An output of the annihilation detector indicates whether an annihilation exists in one or more of the magnetoresistance elements using at least one of the outputs signals of the first and second comparators.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A substrate, comprising one or more first conductive layers, one or more second conductive layers, and a dielectric material that is arranged to encapsulate, at least in part, the first conductive layers and the second conductive layers. The one or more second conductive layers are electrically coupled to the first conductive layers. The first conductive layers and the second conductive layers are arranged to form a conductor. The first conductive layers are arranged to define a first rift in the conductor.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
H02K 11/27 - Dispositifs pour détecter le courant ou actionnés par des valeurs de cette variable
Methods and apparatus for processing signal return of photons reflected by a target illuminated by laser energy using at least one threshold. Parameters of pulses in the signal return exceeding one or more thresholds can be stored in memory. Example parameters include time of flight (ToF) and a time over threshold (ToT).
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/487 - Extraction des signaux d'écho désirés
G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
39.
METHOD AND APPARATUS FOR TRANSMITTING DATA CONCURRENTLY WITH A PULSE-ENCODED SIGNAL
A method is provided for transmitting a message concurrently with a pulse-encoded signal, the method comprising: assigning an identifier to the message; transmitting an identifier of the message between every two consecutive pulses of the pulse-encoded signal until the whole message is transmitted; transmitting a first portion of a payload of the message between every two consecutive pulses of the pulse-encoded signal until the whole message is transmitted; and transmitting a different part of a second portion of the payload of the message between every two consecutive pulses of the pulse-encoded signal until the whole message is transmitted, wherein the pulse-encoded signal encodes information by varying a frequency of pulses of the pulse-encoded signal, and the message is transmitted over a plurality of transmission periods that are delimited by respective consecutive pulses of the pulse-encoded signal.
H03M 13/09 - Détection d'erreurs uniquement, p.ex. utilisant des codes de contrôle à redondance cyclique [CRC] ou un seul bit de parité
H04L 67/12 - Protocoles spécialement adaptés aux environnements propriétaires ou de mise en réseau pour un usage spécial, p.ex. les réseaux médicaux, les réseaux de capteurs, les réseaux dans les véhicules ou les réseaux de mesure à distance
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventeur(s)
Latham, Alexander
Fermon, Claude
Boudreau, Jason
Pannetier-Lecoeur, Myriam
Cadugan, Bryan
Romero, Hernán D.
Abrégé
A magnetic field sensor includes a first coil responsive to a first AC coil drive signal having a first frequency, a magnetic field sensing element responsive to a sensing element drive signal and configured to simultaneously detect a directly coupled magnetic field generated by the first coil and a reflected magnetic field generated by an eddy current induced in a conductive target by the first coil, the conductive target disposed proximate to the magnetic field sensing element, the magnetic field sensing element further configured to generate a magnetic field signal, a second coil responsive to a second AC coil drive signal having a second frequency that is the same as the first frequency and current sensing circuitry configured to measure a magnitude of the second AC coil drive signal that causes the magnetic field signal to be approximately zero.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01B 7/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
41.
Snapback electrostatic discharge protection device with tunable parameters
In one aspect, a diode includes a substrate having a first type dopant; a buried layer having a second type dopant and formed within the substrate; an epitaxial layer having the second type dopant and formed above the buried layer; and a plurality of regions having the first type dopant within the epitaxial layer. The plurality of regions includes a first region, a second region, and a third region. The diode also includes a base well having the first type dopant and located within the epitaxial layer and in contact with the third and fourth regions. In a reverse-bias mode, the diode is an electrostatic discharge (ESD) clamp and forms parasitic transistors comprising a first bipolar junction transistor (BJT), a second BJT and a third BJT.
A semiconductor device that includes an epitaxial layer having a first-type dopant, a first well having a second-type dopant, a base layer having the second-type dopant, a first metal layer comprising a first base terminal and an inner conductor, and a first via connecting the first base terminal to the first well. The base layer is formed within the epitaxial layer and in contact with the first well and at least one dielectric separates the inner conductor from the first base terminal, and the base layer.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 23/528 - Configuration de la structure d'interconnexion
The present application relates to electronics and in particular to switch drive circuits and more particularly to galvanically isolated switch circuits with power transfer from the switch driver input side to the switch side. More specifically, the present application provides a switch drive circuit using a single transformer to transfer control signals to a secondary side for control of the switch along with power to a secondary side circuit to drive the switch in response to the control signals. By detecting the control signal first before drawing current, the effects of leakage inductance in the transformer are reduced.
H03K 17/691 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ avec une isolation galvanique entre le circuit de commande et le circuit de sortie utilisant un couplage par transformateur
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
A method for use in a sensor, comprising: generating a signal that is indicative of an angular position of a rotating target, the signal being generated by at least one magnetic field sensing element; adjusting the signal to produce an adjusted signal, the signal being adjusted based on a current value of a first adjustment coefficient and a current value of a second adjustment coefficient, the first adjustment coefficient including a gain adjustment coefficient, and the second adjustment coefficient including an offset adjustment coefficient; generating an output signal based on the adjusted signal; and updating the first adjustment coefficient, the updating including replacing the current value of the first adjustment coefficient with a new value of the first adjustment coefficient, the updating being performed by minimizing a function that is based on the current value of the first adjustment coefficient and the current value of the second adjustment coefficient.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p.ex. une armature mobile
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Methods and apparatus for a system including an optic to receive light from near objects and far objects and a photoreceiver optically coupled to the optic, the photoreceiver including a photodetector array. A light scattering structure is positioned a distance from the photodetector array to compensate for parallax effects for the received energy from the near objects and the far objects. The light scattering structure is configured to scatter light onto pixels of the photodetector array.
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
A current sensor assembly can include: a coil structure having a first coil and a second coil connected in series, the coil structure configured to generate a differential magnetic field responsive to an electrical current passing through the first and second coils; a first magnetic field sensing element disposed proximate to the first coil and operable to generate a first signal responsive to the differential magnetic field passing through the first magnetic field sensing element in a first direction; a second magnetic field sensing element disposed proximate to the second coil and operable to generate a second signal responsive to the differential magnetic field passing through the second magnetic field sensing element in a second direction; and a circuit operable to subtract the first and second signals to generate a differential signal proportional to the electrical current.
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
47.
ANGLE SENSOR WITH A SINGLE DIE USING A SINGLE TARGET
In one aspect, an angle sensor includes a first plurality of magnetoresistance elements located at a first location on an axis and a second plurality of magnetoresistance elements located at a second location on the axis. The first plurality of magnetoresistance elements includes a first one or more magnetoresistance elements each having a reference direction in a first direction; and a second one or more magnetoresistance elements each having a reference direction in a second direction. The second plurality of magnetoresistance elements includes a third one or more magnetoresistance elements each having a reference direction in the first direction, and a fourth one or more magnetoresistance elements each having a reference direction in the second direction. The angle sensor senses movement of a magnetic target, and the magnetic target is a ring magnet or a single pole magnet.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Methods and apparatus for photo detection having parallax compensation for near and far object signal return. In embodiment, a photoreceiver comprising a at least one light-sensitive pixel to transduce light to electrical signals has at least a first one of the pixels including a first subpixel region having a first light response characteristic and a second subpixel region having a second light response characteristic, wherein the first and second light characteristics are configured to correspond to variations in intensity of reflected light from objects at different distances when the portion of the reflected light reaching the first one of the pixels imaged onto the first and second subpixel regions.
Methods and apparatus for a system including an optic to receive light from near objects and far objects and a photoreceiver optically coupled to the optic having range parallax compensation. A photodetector array (800), in a cross-sectional side-view, has photosensitive areas (802), such as pixels, a transparent substrate (804), and a light scattering feature (806), such as a ridge. Signal return, such as rays, can be incident on the substrate (804). Some rays (808) are directly incident on a photosensitive area (802) and some rays (810) are incident outside of the photosensitive areas (802). A ray (810) outside of any of the photosensitive areas (802) may strike the light scattering structure (806). At least some of the light (812) scattered by the scattering feature (806) falls on a nearby photosensitive area (802). The light scattering structure (806) is positioned a distance from the photodetector array to compensate for parallax effects for the received energy from the near objects and the far objects. The scattering efficiency will typically be relatively low, such that only a fraction of the incident energy is conveyed to the detector active area. In this way, an attenuated portion of a strong signal that is not directly imaged onto the detector's sensitive area can be detected. This preserves the sensor's ability to detect close objects while helping to prevent saturation or damage from optical overload and avoid the complexity of providing additional circuit channels for the segmented array approach.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01S 17/931 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
Methods and apparatus for photodetection having parallax compensation for near and far object signal return. In embodiment, a photoreceiver comprising a at least one light-sensitive pixel to transduce light to electrical signals has at least a first one of the pixels including a first subpixel region having a first light response characteristic and a second subpixel region having a second light response characteristic, wherein the first and second light characteristics are configured to correspond to variations in intensity of reflected light from objects at different distances when the portion of the reflected light reaching the first one of the pixels imaged onto the first and second subpixel regions.
A heterogeneous sensor system includes a magnetic field sensor and an inductive sensor. A checker is configured to receive the magnetic field sensor output signal and the inductive sensor output signal and determine whether an error has occurred based on a comparison of the magnetic field sensor output signal and the inductive sensor output signal. Targets include at least a portion that is conductive and may include a ferromagnetic portion for back biased magnetic sensing. Additional features include on axis and off axis positioning of the sensors with respect to the target, multi-track targets for absolute position sensing, angle sensing and torque sensing configurations.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p.ex. une armature mobile
A sensor integrated circuit (IC) includes a sensing element configured to sense a parameter associated with a target, a processor coupled to the sensing element and configured to generate a sensed signal indicative of the parameter associated with the target, and an output module coupled to receive the sensed signal. The output module is configured to transmit absolute data on a message line at a first rate and transmit incremental data on one or more index lines at a second rate, wherein the second rate is faster than the first rate, wherein the incremental data comprises data associated with changes in the absolute data and wherein an edge or a pulse is used to indicate an incremental change has occurred in the absolute data.
G05B 13/02 - Systèmes de commande adaptatifs, c. à d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques
G05B 13/04 - Systèmes de commande adaptatifs, c. à d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques impliquant l'usage de modèles ou de simulateurs
G05B 19/19 - Commande numérique (CN), c.à d. machines fonctionnant automatiquement, en particulier machines-outils, p.ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'u caractérisée par systèmes de commande de positionnement ou de commande de contournage, p.ex. pour commander la position à partir d'un point programmé vers un autre point ou pour commander un mouvement le long d'un parcours continu programmé
G06F 13/38 - Transfert d'informations, p.ex. sur un bus
G06F 13/42 - Protocole de transfert pour bus, p.ex. liaison; Synchronisation
H04L 12/403 - Réseaux à ligne bus avec commande centralisée, p.ex. interrogation
H04L 67/12 - Protocoles spécialement adaptés aux environnements propriétaires ou de mise en réseau pour un usage spécial, p.ex. les réseaux médicaux, les réseaux de capteurs, les réseaux dans les véhicules ou les réseaux de mesure à distance
SANKEN ELECTRIC KOREA CO.,LTD. (République de Corée)
Inventeur(s)
Lee, Eunsuk
Kim, Jungyul
Shimada, Masaaki
Aso, Shinji
Yoshinaga, Mitsutomo
Kang, Hanju
Abrégé
A detector compares a drain voltage with a first threshold voltage and outputs a first detection signal. An ON counter detects a period of time during which a current flows in a switching, counts the period of time based on a predetermined clock cycle. An OFF counter detects a period of time during which a current flow through the body diode in a state where no current flows in the switching circuit, counts the period of time. An off-time setting circuit sets the time to turn off the switching circuit. A first comparison circuit compares the cycle count value with turn off time. A second comparison circuit compares a cycle count value output by the ON counter with a comparison result output by the first comparison circuit and outputs a signal to stop transmitting a PWM signal.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
SANKEN ELECTRIC KOREA CO.,LTD. (République de Corée)
Inventeur(s)
Lee, Eunsuk
Choi, Kyusam
Yu, Jaekuk
Aso, Shinji
Yoshinaga, Mitsutomo
Kang, Hanju
Abrégé
A detector compares a drain voltage with a first threshold voltage and outputs a first detection signal. An ON-counter detects a period of time during which current flows in a switching circuit based on the first detection signal, counts the period of time based on a predetermined clock cycle, and outputs an ON-count value. A first comparator receives the ON-count value and an ON-threshold value and outputs a first comparison signal when the ON-count value and the ON-threshold value match. A second comparator receives the ON-count value and a decreased ON threshold value, compares the ON-count value and the decreased ON-threshold value, and outputs a second comparison signal. An ON-mask time adjuster receives the second comparison signal and outputs an ON-threshold value for adjusting a mask time and a decreased ON-threshold value that is less than the ON threshold value.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
Systems, methods, and circuits utilize one or multiple data-stream watchdog codes for verifying a temporal state of data from a sensor system. A data-stream watchdog system can includes a sensor system configured to detect physical phenomena and produce corresponding output signals; a memory structure configured to store the output signals as sequential data on a repeating cycle, a watchdog code generator configured to insert a watchdog code into the stored sequential data and update the watchdog code periodically, and a data transmitter configured to receive the sequential data with included watchdog code from the memory structure and transmit the sequential data with the included watchdog code over a physical data channel each cycle of the repeating cycle. An application system receives the data and a watchdog code checker checks whether the watchdog code in the sequential data is correct and produces an error indication when the watchdog code is incorrect.
A semiconductor device according to one or more embodiment may include: an IGBT region including a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type arranged on the first semiconductor region; a third semiconductor region of the first conductivity type arranged on the second semiconductor region; a fourth semiconductor region of the second conductivity type arranged on the first semiconductor region and opposite the second semiconductor region; and a control electrode that is arranged via an insulating film opposite the second semiconductor region; and a diode region comprising a fifth semiconductor region of the second conductivity type on the first semiconductor region. In the semiconductor device according to one or more embodiments, an impurity concentration of the fifth semiconductor region may be lower than the impurity concentration of the second semiconductor region.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
A light emitting device according to one or more embodiment is disclosed, which may include a blue LED, a first phosphor that is excited by light of the blue LED and emits green to yellow light, and a second phosphor that is excited by light of the blue LED and emits light with an emission peak wavelength greater than the emission peak wavelength of the first phosphor but 625 nm or less. In one or more embodiments, an emission intensity of the light emitting device at an emission wavelength of 650 nm relative to the emission intensity at the emission peak wavelength of the light emitting device may be 60% or less.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
58.
Electronic circuit to communicate information as an electrical current on two wires such that the electrical current is stabilized by measuring a voltage on a transistor within the electronic circuit
A two-wire electronic circuit can sense a voltage across terminals of a transistor and control an electrical current of the two-wire electronic circuit in accordance with the sensed voltage.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
59.
Current sensor integrated circuit with a dual gauge lead frame
A current sensor IC includes a unitary lead frame having a primary conductor with a first thickness and a secondary lead having a second thickness less than the first thickness. A semiconductor die adjacent to the primary conductor includes a magnetic field sensing circuit to sense a magnetic field associated with the current and generate a secondary signal indicative of the current. An insulation structure is disposed between the primary conductor and the die. A mold material encloses a first portion of the secondary lead and a second portion of the secondary lead that is exposed outside of the package has the second thickness. A method of manufacturing a current sensor IC includes providing a unitary lead frame sheet having a first thickness, decreasing a thickness of a portion of the sheet to provide a first portion with the first thickness and a second portion with a smaller thickness, and stamping the sheet to form a repeating lead frame pattern, with each pattern including a primary conductor formed from the first portion and secondary leads formed from the second portion.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
A multichannel magnetic field sensor including a plurality of magnetic field sensing elements includes a multiplexed signal path. A front end amplifier is coupled to receive a first magnetic field signal during a first time interval and a second magnetic field signal during a second time interval. A first low pass filter processes the amplified signal during the first time interval and a second low pass filter processes the amplified signal during the second time interval. A sinc filter is coupled to receive the first low pass filtered signal during the first time interval and the second low pass filtered signal during the second time interval. A Schmitt trigger circuit includes a comparator to process the sinc filter output signal and to generate a first comparator output signal during the first time interval and a second comparator output signal is provided during the second time interval.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
Differential magnetic field torque sensors include first and second magnetic field concentrators that guide magnetic flux to a magnetic field sensor from first and second magnetic field directors and a target, such as a multipole magnet assembly configured as a ring magnet. The magnetic field concentrators have pairs of sections that are interdigitated and configured adjacent to magnetic field sensing elements of the magnetic field sensor. The magnetic field directors can each have a plurality of teeth, which can be interdigitated and adjacent or proximate to the target. The magnetic field directors can be configured to be mounted as a unit to a rotatable shaft while the target can be configured to be mounted to a different rotatable shaft. The magnetic field concentrators and magnetic field sensor can be fixed while the magnetic field directors and target can rotate with respect to each other about a twist axis.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
62.
MAGNETORESISTIVE ELEMENT FOR A 2D MAGNETIC SENSOR HAVING A REDUCED HYSTERESIS RESPONSE
A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:
A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:
Δ
M
=
M
s
F
M
2
t
F
M
2
−
M
s
F
M
1
t
F
M
1
M
s
F
M
2
t
F
M
2
+
M
s
F
M
1
t
F
M
1
A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:
Δ
M
=
M
s
F
M
2
t
F
M
2
−
M
s
F
M
1
t
F
M
1
M
s
F
M
2
t
F
M
2
+
M
s
F
M
1
t
F
M
1
wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers; and wherein the sense magnetic ratio is between 0.1 and 0.25.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Differential magnetic field torque sensors include first and second magnetic field concentrators that guide magnetic flux to a magnetic field sensor from first and second magnetic field directors and a target, such as a multipole magnet assembly configured as a ring magnet. The magnetic field concentrators have pairs of sections that are interdigitated and configured adjacent to magnetic field sensing elements of the magnetic field sensor. The magnetic field directors can each have a plurality of teeth, which can be interdigitated and adjacent or proximate to the target. The magnetic field directors can be configured to be mounted as a unit to a rotatable shaft while the target can be configured to be mounted to a different rotatable shaft. The magnetic field concentrators and magnetic field sensor can be fixed while the magnetic field directors and target can rotate with respect to each other about a twist axis.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
G01L 5/22 - Appareils ou procédés pour la mesure des forces, du travail, de la puissance mécanique ou du couple, spécialement adaptés à des fins spécifiques pour la mesure de la force appliquée aux organes de commande, p.ex. organes de commande des véhicules, détentes
64.
DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR TRANSISTOR INCLUDING A RECESSED DIELECTRIC
In one aspect, a double-diffused metal oxide semiconductor (DMOS) includes a region of a semiconductor having a first region of a semiconductor having a first-type dopant, a first well having a second-type dopant, a dielectric within the first well, the dielectric having a bottom surface and a top surface opposite the bottom surface, a gate disposed on the top surface of the dielectric. The gate, the dielectric and the first well are configured to form a first reduced surface field (RESURF). The bottom surface of the dielectric has a first portion and a second portion, and the first portion of the bottom surface of the dielectric is closer to the top surface of the dielectric than the second portion of the bottom surface of the dielectric.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
65.
MULTIPLE BRANCH BUS BAR FOR CORELESS CURRENT SENSING APPLICATION
A system, comprising a bus bar having a first through-hole formed therein and a first current sensor that is disposed adjacent to the first branch. The first through-hole is arranged to define, at least in part, a first branch of the bus bar and a second branch of the bus bar. The first branch has different length and/or thickness than the second branch. The first current sensor is arranged to measure an electrical current through the bus bar.
A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.
Methods and apparatus for a sensor having a photodetector array having photodetectors comprising a colloidal quantum dot (CQD) structure formed on an integrated circuit. The sensor may comprise a LIDAR time of flight sensor.
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
A packaged current sensor integrated circuit (300) includes a primary conductor (330) having an input portion (332) and an output portion (334) configured to carry a current to be measured by a magnetic sensing element (309a, 309b) supported by a semiconductor die (308) adjacent to the primary conductor. The primary current path contains a mechanical locking feature (355a, 355b). The thickness of the molded body of the package is reduced to improve vibration immunity.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
Methods and apparatus for a signal isolator that mitigates the effects of CMTI strikes. In embodiments, a first die comprises a transmit module and the first die has a first voltage domain; and a second die comprises a receive module including a receive amplifier configured to receive from the transmit module a transmit signal that includes a differential signal and a common mode current. The second die may have a second voltage domain with the first and second die being separated by an isolation barrier. In embodiment, the receive amplifier includes a differential amplifier to receive the differential input signal from the transmit module; and a common mode module configured to sense the common mode current and sink or source the common mode current and minimize changes to an input impedance of the receive amplifier.
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
Methods and apparatus for a signal isolator that mitigates the effects of CMTI strikes. In embodiments, a first die comprises a transmit module and the first die has a first voltage domain; and a second die comprises a receive module including a receive amplifier configured to receive from the transmit module a transmit signal that includes a differential signal and a common mode current. The second die may have a second voltage domain with the first and second die being separated by an isolation barrier. In embodiment, the receive amplifier includes a differential amplifier to receive the differential input signal from the transmit module; and a common mode module configured to sense the common mode current and sink or source the common mode current and minimize changes to an input impedance of the receive amplifier.
H03F 3/347 - Amplificateurs de courant continu dans lesquels tous les étages sont couplés en courant continu comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
The present invention relates to controlling of an active clamp fly-back converter comprising a control unit 2 that turns on/off a clamp switch two times by two pulses during off-period of a main switch. The control unit 2 sets the on-period of the first pulse to half the resonant frequency of a clamp capacitor and a leakage inductor to the resonant frequency, inclusive, turns on the clamp switch when current does not flow through the body diode of the clamp switch and flows the resonant current of the clamp capacitor and the leakage inductor, flows current through the body diode after turning off the clamp switch, turns on the clamp switch after the magnetization current of a magnetizing inductor becomes zero by the second pulse and flows negative direction current through the magnetizing inductor, and performs zero-voltage switching of the main switch QL, thereby providing a high-efficiency and low noise converter.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
A method comprising: obtaining at least three sampled values m, each of the sampled values m including a respective first component that is obtained based on a first signal and a respective second component that is obtained based on a second signal and solving a system of equations to yield at least one of (i) an offset adjustment vector k, (ii) a sensitivity mismatch coefficient γ, and (iii) a non-orthogonality coefficient s, the system of equations being arranged to model each of the sampled values m as a function of: a respective one of a plurality of number arrays, a magnetic field, and the at least one of (i) the offset adjustment vector k, (ii) the sensitivity mismatch coefficient γ, and (iii) the non-orthogonality coefficient s.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Systems, methods, and apparatus for differential magnetic field torque sensors that include first and second magnetic targets for coupling to one or more rotatable shafts. The magnetic targets can include multipole ring magnets having a plurality of alternating magnetic domains. First and second differential magnetic field angular position sensors positioned proximate to the magnetic targets produce angular position of the targets and a processing unit is operative to receive an angular position from each of the first and second differential magnetic field angular position sensors and determine a difference between the angular positions. The difference corresponds to an angle between the targets, and the processing unit is operative to calculate, based on the angle, a torque applied to the one or more rotatable shafts.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
Current sensor packages are described including a leadframe configured to carry a current to be sensed and a current sensor that is electrically isolated from the leadframe. The current sensor is disposed adjacent to a first portion of the leadframe that includes a plurality of notches. An encapsulating material is configured to encapsulate the current sensor and at least a part of the first portion of the leadframe that is adjacent to the current sensor and includes the plurality of notches. The current sensor includes a substrate, a first magnetic field sensing element that is formed on the substrate, and a second magnetic field sensing element that is formed on the substrate. The first magnetic field sensing element and the second magnetic field sensing element are disposed on opposite sides of a central axis of the first portion of the leadframe.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
Systems, methods, and apparatus for differential magnetic field torque sensors that include first and second magnetic targets for coupling to one or more rotatable shafts. The magnetic targets can include multipole ring magnets having a plurality of alternating magnetic domains. First and second differential magnetic field angular position sensors positioned proximate to the magnetic targets produce angular position of the targets and a processing unit is operative to receive an angular position from each of the first and second differential magnetic field angular position sensors and determine a difference between the angular positions. The difference corresponds to an angle between the targets, and the processing unit is operative to calculate, based on the angle, a torque applied to the one or more rotatable shafts.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
G01L 5/22 - Appareils ou procédés pour la mesure des forces, du travail, de la puissance mécanique ou du couple, spécialement adaptés à des fins spécifiques pour la mesure de la force appliquée aux organes de commande, p.ex. organes de commande des véhicules, détentes
76.
Optical system for improved reliability and performance
Described herein is a method and apparatus for an optical system configured to output redundant outputs, where the optical system includes at least one optical device configured to receive an optical signal; at least one optical transducer, wherein each at least one optical transducer is configured to receive the optical signal from the at least one optical device and convert the optical signal to an electrical signal; and at least one electronic device configured to receive each electrical signal and output the redundant outputs.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
77.
Integrated circuit package with magnet having a channel
An integrated circuit package and method of fabrication are described. The integrated circuit package includes a lead frame having a first surface and a second opposing surface and a semiconductor die having a first, active surface in which circuitry is disposed and a second opposing surface attached to the first surface of the lead frame. A magnet attached to the second surface of the lead frame has a non-contiguous central region and at least one channel extending laterally from the central region. An overmold material forms an enclosure surrounding the magnet, semiconductor die, and a portion of the lead frame.
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
A system, comprising: a printed circuit board; a first conductor having a first central longitudinal axis, the first conductor having a first through-hole that is formed therein; a second conductor having a second central longitudinal axis; and a first current sensor that is mounted on the printed circuit board, the first current sensor being disposed at least partially inside the first through-hole, the first current sensor including a first pair of magnetic field sensing elements, the magnetic field sensing elements in the first pair being aligned with a first alignment axis that is arranged at a first angle relative to the second central longitudinal axis, the first angle being less than 75 degrees.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
79.
FLASH MEMORY CELL STRUCTURE HAVING SEPARATE PROGRAM AND ERASE ELECTRON PATHS
In one aspect, a flash memory cell includes a well having a first-type dopant, a source having a second-type dopant and formed within the well, a drain having the second-type dopant and formed within the well, a floating gate above the well, a control gate above the floating gate, an oxide compound disposed between the floating gate and the control gate, and a tunnel oxide disposed between the floating gate and the well. The flash memory cell is configured, in one of a program mode or an erase mode, to move an electron from the source to the floating gate. The flash memory cell is configured, in the other one of the program or the erase mode, to move an electron is from the floating gate to the drain.
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/66 - Types de dispositifs semi-conducteurs
G11C 16/10 - Circuits de programmation ou d'entrée de données
G11C 16/14 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement
80.
Magnetoresistive sensor having seed layer hysteresis suppression
Methods and apparatus for a magnetoresistive (MR) sensor including a seed layer having a CoFe layer for canceling hysteresis in the MR sensor. The MR stackup can include a free layer and a reference layer. The seed layer having CoFe provides a desired texturing of the stackup to cancel hysteresis effects.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H10N 50/80 - Dispositifs galvanomagnétiques - Détails de structure
A sensor includes a first sensing element configured to sense a parameter and generate a first sensing element output signal indicative of the parameter, a first front end element configured to receive the first sensing element output signal and to generate a first front end signal, a second sensing element configured to sense the parameter and generate a second sensing element output signal indicative of the parameter, a second front end element configured to receive the second sensing element output signal and to generate a second front end signal, a difference block configured to receive the first and second front end signals and generate a difference signal indicative of a difference between the first and second front end signals, an absolute value block configured to receive the difference signal and generate an absolute difference signal indicative of an absolute value of the difference signal, and an offset comparator configured to compare the absolute difference signal to an offset threshold to detect whether a difference between an offset associated with the first front end signal and an offset associated with the second front end signal is within a predetermined tolerance.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Systems, methods, and circuits provide delay-locked loop (DLL) timing error mitigation. A DLL false-lock detection system can include DLL circuitry configured to receive a reference clock signal having a time period. The system can include shift register circuitry and latched comparison circuitry which can determine a time period of a locked condition of the DLL delay line with respect to the reference clock signal time period. The system can determine whether the system is correctly locked to the base time period or incorrectly locked to a multiple of the base time period. A further system can operate to cause a phase detector circuitry in a DLL to ignore the first edge of a reference clock signal presented to the phase detector circuitry and thereby avoid stuck-lock conditions.
H03L 7/095 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie utilisant un détecteur de verrouillage
H03L 7/081 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase avec un déphaseur commandé additionnel
A semiconductor device according to one or more embodiments may include: on a semiconductor substrate, a high voltage circuit region; a transistor element region; an isolation region that elementally isolates the transistor element region from the high voltage circuit region; and a capacitively coupled field plate including plural lines of conductors, wherein the capacitively coupled field plate is provided to extend circumferentially along an outer circumferential portion of the high voltage circuit region and across the transistor element region, in a plan view of the semiconductor device, and one or more dividing sections divides at least one of the plural lines of conductors in the capacitively coupled field plate to make the at least one line discontinuous.
A watchdog timer device according to one or more embodiments may include a mode setting unit that sets a first mode or a second mode. In the first mode, the watchdog timer device monitors an operation state of a monitored device and generates an interrupt signal to cause the monitored device to perform recovery processing at a first timeout. In the second mode, the watchdog timer device monitors the recovery processing and generates a reset signal to restart the monitored device at a second timeout. The watchdog timer device uses different logic to execute determining the first timeout in the first mode and determining the second timeout in the second mode.
According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Lidar transmission optics and systems project more laser pulse energy per pixel instantaneous field-of-view (IFOV) to a portion of a sensor field of view (FOV), e.g., a portion that would be expected to have both close and distant objects of interest, and proportionally less pulse energy per pixel IFOV to other portions of the sensor FOV, e.g., those that would be expected to have or see only close objects of interest. Optics such as diffractive optical elements (DOEs), gradient-index (GRIN) lenses, and/or compound lens systems can be used for producing desired irradiance distributions having multiple parts or regions. The optics and systems improve range performance by providing for more efficient use of the total available laser pulse energy than transmit optics that project uniform pulse energy per pixel IFOV across the sensor FOV.
In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 3/00 - Appareils ou procédés spécialement adaptés à la fabrication des appareils de mesure
88.
Diagnostic circuits and methods for analog-to-digital converters
Apparatus includes an ADC configured to convert an analog signal to a digital signal, a comparator having a first input responsive to the analog signal, a second input responsive to the digital signal, and an output at which a comparison signal is provided, and an output checker configured to process the comparison signal to generate a fault signal indicative of whether a fault has occurred in the ADC. The comparator can be an analog comparator in which case the digital signal is converted to an analog signal for the comparison or a digital comparator in which case an additional ADC is provided to convert the analog signal into a digital signal for the comparison. Embodiments include more than one ADC in which case summation elements are provided to sum the analog signals and the digital signals for the comparison.
A current sensor circuit package includes a primary conductor having an input portion into which a current flows, an output portion from which the current flows, and an exposed portion, wherein the input and output portions have a reduced area edge. A secondary lead has an elongated portion that is offset with respect to the exposed portion of the secondary lead. A semiconductor die is disposed adjacent to the primary conductor on an insulator portion and at least one magnetic field sensing element is supported by the semiconductor die. A package body enclosing the semiconductor die and a portion of the primary conductor includes a first cutout in a first side edge configured to expose the reduced area edge of the input portion of the primary conductor and a second cutout on a second side edge configured to expose the reduced area edge of the output portion of the primary conductor, wherein the first side edge of the package body is substantially parallel with respect to the second side edge of the package body.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
In one aspect, a method includes depositing a first glass layer on a metallization layer and depositing an etch stop layer on the first glass layer. The method further includes depositing a second glass layer on the etch stop layer and polishing the second glass layer down to at least a surface of the etch stop layer.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/463 - Traitement mécanique, p.ex. meulage, traitement par ultrasons
H01L 21/469 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer les caractéristiques physiques ou la forme de leur surface, p.ex. gravure, polissage, découpage pour y former des couches isolantes, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches
H01L 21/465 - Traitement chimique ou électrique, p.ex. gravure électrolytique
91.
MAGNETIC SENSOR ELEMENT AND DEVICE HAVING IMPROVED ACCURACY UNDER HIGH MAGNETIC FIELDS
Magnetic angular sensor element destined to sense an external magnetic field, including a magnetic tunnel junction containing a ferromagnetic pinned layer having a pinned magnetization, a ferromagnetic sensing layer, and a tunnel magnetoresistance barrier layer; the ferromagnetic sensing layer including a first sensing layer being in direct contact with the barrier layer and having a first sensing magnetization, a second sensing layer having a second sense magnetization, and a metallic spacer between the first sensing layer and the second sensing layer; wherein the metallic spacer is configured to provide an antiferromagnetic coupling between the first sensing magnetization and the second sensing magnetization such that the first sensing magnetization is oriented substantially antiparallel to the second sensing magnetization; the second sensing magnetization being larger than the first sensing magnetization, such that the second sensing magnetization is oriented in accordance with the direction of the external magnetic field.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
92.
Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Magnetic field closed loop sensors including offset reduction circuitry to reduce undesired baseband components attributable to offset associated with magnetoresistance elements are described. A superimposed signal including a main signal portion indicative of a parameter of a target and an offset reduced signal portion is coupled to feedback circuitry. The feedback circuitry generates a feedback signal to drive a feedback coil. Main processing circuitry is operative to extract the main signal portion from the superimposed signal and produce a sensor output signal based on the main signal portion. Example offset reduction circuitry can take the form of AC coupling circuitry or a ripple reduction loop.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
94.
ACTIVE/PASSIVE PIXEL CURRENT INJECTION AND BIAS TESTING
Systems, methods, and circuits for electrical pixel background current injection tests for lidar systems are described. Systems, methods, and circuits for electrical pixel timing pulse current injection tests for lidar systems are further described. Systems, methods, and circuits for or pixel photodiode health checking/testing using on-chip bias adjustment and passive photo-current imaging circuitry for lidar systems are also described. Embodiments can be used for specification of an Application Safety Integration Level (ASIL) in compliance with a safety standard such as ISO 26262 or the like.
An integrated circuit (IC) includes a level shifter coupled to receive a first supply voltage and a second supply voltage and configured to generate a first output signal and a second output signal in response to an input command signal and an edge detector configured to detect an edge on the second supply voltage and to sink a current from the level shifter in response to detection of the edge in order to prevent a change in logic state of the first output signal or the second output signal. The edge detector can include a positive edge detector configured to generate a positive edge signal in response to detection of a positive going edge of greater than a first predetermined slew rate and a negative edge detector configured to generate a negative edge signal in response to detection of a negative going edge of greater than a second predetermined slew rate.
H03K 5/1534 - Détecteurs de transition ou de front
H03K 19/0185 - Dispositions pour le couplage; Dispositions pour l'interface utilisant uniquement des transistors à effet de champ
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
A semiconductor device according to one or more embodiments may include a drive circuit comprising: a gate control circuit that generates a gate control signal; a first resistor comprising a first electrode electrically connected to the gate control circuit and a second electrode; and a second resistor comprising a first electrode electrically connected to the gate control circuit and a second electrode that is not electrically connected to the second electrode of the first resistor; wherein the second resistor comprises a resistance value greater than that of the first resistor; an IGBT circuit comprising: a first IGBT cell electrically connected to the second electrode of the first resistor; and a second IGBT cell electrically connected to the second electrode of the second resistor.
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p.ex. BIMOS, dispositifs composites tels que IGBT
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 49/02 - Dispositifs à film mince ou à film épais
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
A method comprising: receiving a first current measurement that is taken at a first predetermined time instant; receiving a second current measurement that is taken at a second predetermined time instant; classifying the first current measurement as corresponding to one of a plurality of electrical signals, the first current measurement being classified based, at least in part, on a duty cycle pattern of the plurality of electrical signals; classifying the second current measurement as corresponding to another one of the plurality of electrical signals, the second current measurement being classified based, at least in part, on the duty cycle pattern of the plurality of electrical signals; and adjusting a duty cycle of at least one of the electrical signals based on the first current measurement, the classification of the first current measurement, the second current measurement, and the classification of the second current measurement.
Methods and apparatus for receiving a return laser pulse at a detector system having pixels in a pixel array and analyzing a response of the pixels in the pixel array including comparing the response to at least one threshold corresponding to decay of photonic energy of the laser pulse over distance and target reflectivity, wherein the at least one threshold comprises a first threshold corresponding to a low trigger for a pulse generated by a first type of laser and a second threshold corresponding to a high trigger for the pulse generated by the first type of laser. Embodiments can further include generating an alert signal based on the response of the pixels in the pixel array.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation
H01S 5/068 - Stabilisation des paramètres de sortie du laser
H01S 5/50 - Structures amplificatrices non prévues dans les groupes
H01S 3/0915 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière incohérente
H01S 3/0941 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p.ex. par une diode laser
H01S 3/30 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p.ex. l'effet Brillouin ou Raman stimulé
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
A method is provided for use in a sensor, the method comprising: selecting a switching cycle for the sensor; transitioning the sensor into a state in which at least one component of the sensor is periodically turned on and off in accordance with the switching cycle; sampling an analog signal to generate a sampled signal, the analog signal being generated by at least one sensing element, the analog signal being sampled only during periods in which the at least one component of the sensor is turned on; and generating an output signal based, at least in part, on the sampled signal and outputting the output signal.
In one aspect, an angle sensor includes magnetic-field sensing elements that include a first pair, a second pair, a third pair and a fourth pair of magnetic-field sensing elements; and processing circuitry configured to determine an angle of a rotating ring magnetic having a plurality of North-South pole pairs each having a unique period length. The processing circuitry includes a first bridge formed from the first and second pairs of magnetic-field sensing elements and a second bridge formed from the third and fourth pairs of magnetic-field sensing elements. The angle includes a value from 0° to 360°. The first, second, third and fourth pairs of magnetic-field sensing elements are each disposed on a first axis. The first, second, third and fourth pairs of magnetic-field sensing elements each have a sensitivity in a first direction along the first axis. The angle sensor is formed on a single die.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
