The purpose of the present invention is to allow users to sooner understand a more accurate time required in order for charging to complete. This charging control device comprises: a processing unit that, during charging of a power storage device, corrects a calculated value of remaining charging time calculated at the start of charging of the power storage device, and, at the start of charging, acquires information indicating a correction timing at which the calculated value of the remaining charging time is corrected; and a reporting unit that reports the correction timing at the start of charging and reports the correction value of the calculated value of the remaining charging time during charging.
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
This variable capacitor has a first conductive layer, a second conductive layer, and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. The first conductive layer and the second conductive layer are each a ferromagnetic layer including a ferromagnetic body. The first conductive layer has a first magnetic domain and a second magnetic domain that has magnetization oriented in a direction different from that of the first magnetic domain. The variable capacitor is configured such that a magnetic wall, which is the boundary between the first magnetic domain and the second magnetic domain, can be moved in a region of the first conductive layer overlapping at least the capacitance layer in the lamination direction, in a first direction of the in-plane of the first conductive layer.
The present invention makes it possible to stably obtain a solid-state battery having excellent cycle characteristics. A solid-state battery (1) includes: a positive electrode layer (10); a negative electrode layer (20) opposite to the positive electrode layer; and an electrolytic layer (30) provided therebetween. For example, the solid-state battery (1) has an impedance of 100000 Ω or more, which is measured by an AC impedance method before performing charging/discharging and which is estimated from a circular arc approximated in a frequency range from 0.3 Hz to 0.1 Hz on a complex number plane. The solid-state battery (1) exhibiting said impedance has excellent long-term cycle characteristics while having favorable initial characteristics without occurrence of short-circuiting. The solid-state battery (1) which has a good quality and has, in addition to initial characteristics, excellent cycle characteristics can be stably obtained before performing charging/discharging or before shipment.
H01M 4/136 - Electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
4.
METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETORESISTANCE EFFECT ELEMENT
According to the present invention, a method for manufacturing a magnetized rotary element has a measurement step, a comparison step, and a determination step. In the measurement step, a laminate comprising a first detection layer and a second detection layer is etched, and a first measurement time period from when a first signal originating from a first material included in the first detection layer is detected until a second signal originating from a second material included in the second detection layer is detected, is measured. In the comparison step, a first reference time period from when the first signal is detected until the second signal is detected when etching a reference laminate having the same film formation as the laminate, and the first measurement time period are compared, and the deviation between the first reference time period and the first measurement time period is derived. In the determination step, a condition from when the second signal is detected until the etching is finished is determined from the deviation.
This positive electrode for a lithium battery includes a positive electrode active material containing manganese dioxide and a conductive auxiliary agent. The conductive auxiliary agent includes carbon black. The carbon black has an average primary particle size of 30 nm or more and a specific surface area of 1000 m2/g or more, and contains Al.
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
6.
NEGATIVE ELECTRODE FOR ALKALINE SECONDARY BATTERIES, ALKALINE SECONDARY BATTERY, AND METHOD FOR PRODUCING NEGATIVE ELECTRODE FOR ALKALINE SECONDARY BATTERIES
This negative electrode for alkaline secondary batteries comprises a negative electrode current collector and a negative electrode mixture that is supported by the negative electrode current collector. The negative electrode mixture contains a hydrogen storage alloy that has an Fe content of 200 to 900 ppm by mass, and a carbon black that has an Fe content of 1,000 to 2,800 ppm by mass.
[Problem] To reduce connection resistance between a coil part and a terminal electrode. [Solution] A coil component 100 comprises: a coil part C1 in which a coil shaft is embedded in a base body so as to lie parallel to terminal formation surfaces 161, 162; and terminal electrodes 131, 132. A conductor layer 110 included in the coil part C1 includes: a coil pattern 111, a connection pattern 112 that connects the coil pattern 111 to the terminal electrode 131, and an auxiliary pattern 113 connected to the terminal electrode 132. A conductor layer 120 included in the coil part C1 includes: a coil pattern 121 and a connection pattern 122 that connects the coil pattern 121 to the terminal electrode 132. The coil patterns 111, 121 are connected to one another via a via conductor 151. The auxiliary pattern 113 is connected to the connection pattern 122 via a via conductor 152.
AA within a range of 200-450 cm−1in a Raman spectrum being 55 cm−1BB within a range of 80-200 cm−1being 55 cm−1abcefhh (In the formula, A is at least one element selected from alkali metals and alkaline earth metals other than Li; E is at least one element selected from the group consisting of Al, Ga, In, Sc, Y, Ti, Zr, Hf, and lanthanoids; J is at least one group selected from the group consisting of anions; and X is at least one element selected from the group consisting of F, Cl, Br, and I.)
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
C01B 25/45 - Phosphates containing plural metal, or metal and ammonium
Provided are a battery pack and a method for producing the same which enable easy positioning of the center axes of battery cells arranged linearly and electrically connected in series, and which enable improvement in accuracy of the positioning. The battery pack (1) has first and second battery cells (10A, 10B) which are arranged linearly and in series and each of which has a conductive and cylindrical exterior tube (13). A battery tab (20), through which the battery cells (10A, 10B) are electrically connected in series, is disposed between the positive electrode terminal of the first battery cell (10A) and the negative electrode terminal of the second battery cell (10B). The battery tab (20) has: a welding plate part (22) disposed between the battery cells (10A, 10B); and an energization plate part (23) located on the radially outer side of the exterior tube (13) and continuous with the welding plate part (22). The welding plate part (22) has two projections (24) on a surface of the second battery cell (10B) opposite to the negative electrode terminal, the projections being fixed to the negative electrode terminal by projection welding.
B23K 11/24 - Electric supply or control circuits therefor
H01M 50/503 - Interconnectors for connecting terminals of adjacent batteries; Interconnectors for connecting cells outside a battery casing characterised by the shape of the interconnectors
H01M 50/505 - Interconnectors for connecting terminals of adjacent batteries; Interconnectors for connecting cells outside a battery casing comprising a single busbar
[Problem] To provide a substrate processing device that allows a uniform load to be applied to a to-be-pressured object. [Solution] A substrate processing device 1 comprises: a base part 180 that receives a load; an upper jig plate 70 that is provided with a heat source 170; a pressure application plate 80 that is attached to the upper jig plate 70 and that applies a pressure to a to-be-pressured object; and a support part 60 that is interposed between the base part 180 and the upper jig plate 70 and that supports the upper jig plate 70 for the base part 180. The support part 60 comprises support bodies 61 formed from a ceramic-based material, and an air layer 62 surrounding the support bodies 61.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
11.
MACHINE LEARNING DEVICE AND CARBON DIOXIDE CONCENTRATION MEASUREMENT DEVICE
This machine learning device comprises: an estimation unit that estimates a carbon dioxide concentration on the basis of an input signal; a timing detection unit that monitors an estimated value output from the estimation unit, and that determines a timing for correction of the estimated value; and a correction unit that determines a correction value for correcting the estimated value every time a correction instruction is received from the timing detection unit. The timing detection unit issues a correction instruction to the correction unit if a variation width between a first estimated value at a first time and a second estimated value at a second time which is continuous with the first time is greater than a first variation width and the second estimated value is equal to or less than a first defined value, or if a variation width between the first estimated value and the second estimated value is greater than a second variation width and the second estimated value is equal to or greater than a second defined value.
This spin inductor comprises: a first inductor layer; a first terminal; and a second terminal. The first inductor layer is provided with a first wiring layer and a first ferromagnetic layer that adjoins the first wiring layer. The first terminal adjoins a first side surface of the first inductor layer. The second terminal adjoins a second side surface different from the first side surface of the first inductor layer. A virtual surface that connects the upper end edge and the lower end edge of the first side surface is inclined with respect to the lamination direction.
A noise processing circuit according to one embodiment of the present invention comprises: a detection unit that detects a sound source on the basis of a plurality of signals; a flag signal generation unit that generates a flag signal indicating a period in which the plurality of signals include a first signal component; a beamforming processing unit that, on the basis of the plurality of signals and the flag signal, generates a first signal by emphasizing the first signal component and generates a second signal by suppressing the first signal component; a noise model generation unit that generates, on the basis of the flag signal, a plurality of noise models corresponding to a spectrum of the first signal; a noise model selection unit that, on the basis of the flag signal, selects one of the first signal and the second signal and calculates similarity between a spectrum of the selected signal and each of the plurality of noise models, thereby selecting one of the plurality of noise models; and a spectrum subtraction unit that performs a spectrum subtraction process on the basis of the spectrum of the first signal and the selected noise model.
H04R 1/40 - Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers
The present application provides a solid-state battery that eliminates the need for additional components such as conductive resin layers, makes it possible to enhance cycle characteristics, and can also be applied to solid-state batteries in which oxide-based solid electrolytes are used. The present application also provides a method for producing the solid-state battery. The present invention is intended to solve the problems described above and relates to a solid-state battery including a positive electrode layer, a negative electrode layer, and a solid electrolyte layer arranged between the positive electrode layer and the negative electrode layer, in which the ratio (negative electrode capacity/positive electrode capacity) of the charge storage capacity of the negative electrode layer to the charge storage capacity of the positive electrode layer is 0.74-0.96.
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
H01M 4/136 - Electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
15.
CONTROL DEVICE FOR MOTOR, MOTOR, CONTROL DEVICE FOR POWER GENERATOR, POWER GENERATOR, AND WIND TURBINE
This control device for a motor, power generator or the like includes: current supply lines 42a, 42b, 42c which respectively supply currents of different phases to coils 32 (32a) of the motor or power generator, which is provided with magnets; and a switching unit 44 which switches to a connected state or a disconnected state between the current supply lines.
This all-solid-state battery (100) comprises a positive electrode layer (20), a solid electrolyte layer (10), and a negative electrode layer (30). A negative electrode mixture (34) of the negative electrode layer (30) includes one or both of a negative electrode active material (34A) and a carbon material (34D), a first phase (34B) that contacts at least a portion of the negative electrode active material (34A) and the carbon material (34D), and a second phase (34C) that contacts at least a portion of the first phase (34B). The first phase (34B) and the second phase (34C) each include an Li element and an X element that is one halogen element selected from the group consisting of F, Cl, Br, and I. The X element concentration in the first phase (34B) is higher than the X element concentration in the solid electrolyte layer (10), and the X element concentration in the second phase (34C) is lower than the X element concentration in the first phase (34B) and the X element concentration in the solid electrolyte layer (10).
Provided are: a negative electrode for which it is possible to reduce irreversible capacity in a charge-discharge cycle and to improve charging and discharging efficiency; and an all-solid-state battery provided with the negative electrode. The negative electrode is for a battery comprising a negative electrode current collector and a negative electrode composite material layer formed on one surface of the negative electrode current collector. The negative electrode composite material layer has a negative electrode active material and a solid electrolyte material. The solid electrolyte material is a compound represented by formula (1). The amount of conductive carbon material in the constitution of the negative electrode composite material layer is 3 mass% or less. Drawing_references_to_be_translated:
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
This cured product for lithium ion secondary batteries comprises water-soluble polymers, a crosslinking agent and cellulose nanofibers. The crosslinking agent crosslinks the water-soluble polymers different from each other, or the water-soluble polymers and the cellulose nanofibers. If measured by means of wide-angle X-ray scattering (WAXS) using a CuKα ray, the diffraction angle 2θ has a peak within the range of 16° to 21°. The half-value width of the peak is 5.5° or less.
C08L 29/04 - Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
C08L 33/02 - Homopolymers or copolymers of acids; Metal or ammonium salts thereof
C08L 101/14 - Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity the macromolecular compounds being water soluble or water swellable, e.g. aqueous gels
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
19.
DEVICES AND METHODS FOR FLOW CONTROL IN A MICROFLUIDIC SYSTEM
A microfluidic device and a method for flow control of cells or particles in a microfluidic channel are disclosed. The microfluidic device may include a substrate having an outlet channel. The microfluidic device may also include a microfluidic channel arranged on the substrate such that an outlet of the microfluidic channel is positioned above the outlet channel. The microfluidic device may further include a set of piezoelectric actuators arranged above the outlet channel and adjacent to the outlet, the set of piezoelectric actuators configured to eject a portion of a fluid out of the microfluidic channel via the outlet.
B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
H10N 30/03 - Assembling devices that include piezoelectric or electrostrictive parts
H10N 30/04 - Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
This all-solid-state battery comprises an outer case body, and, inside the outer case body: a laminate in which a positive electrode active material layer, a solid-state electrolyte layer, and a negative electrode active material layer are laminated in the stated order; a positive electrode current collector and a negative electrode current collector that sandwich the laminate in the lamination direction; an insulating sheet that is positioned between the positive electrode current collector and the negative electrode current collector, and is positioned in an in-plane direction relative to the laminate; a first adhesive sheet that is positioned between the insulating sheet and the positive electrode current collector, the first adhesive sheet bonding the insulating sheet and the positive electrode current collector in at least a portion thereof; and a second adhesive sheet that is positioned between the insulating sheet and the negative electrode current collector, the second adhesive sheet bonding the insulating sheet and the negative electrode current collector in at least a portion thereof. The laminate and the outer case body are in communication with each other.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
A cylindrical battery gasket (32) has insulation properties and is to be fitted with a sealing body (24) for sealing an opening of a bottomed exterior can (10) for a cylindrical battery. The gasket has a bottom part, and a cylindrical circumferential wall rising upwardly from a peripheral portion of the bottom part. An inclined surface (32A) is provided to the entire circumference of the outer circumference portion of the gasket in a manner such that the outer diameter of the circumferential wall increases upward and becomes larger than the inner diameter of an opening end part (10A) of the exterior can. The circumferential wall has a shape in which the thickness of the wall gradually increases toward the upper portion of the wall.
H01M 50/184 - Sealing members characterised by their shape or structure
H01M 50/107 - Primary casings, jackets or wrappings of a single cell or a single battery characterised by their shape or physical structure having curved cross-section, e.g. round or elliptic
H01M 50/152 - Lids or covers characterised by their shape for cells having curved cross-section, e.g. round or elliptic
H01M 50/167 - Lids or covers characterised by the methods of assembling casings with lids by crimping
H01M 50/586 - Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries inside the batteries, e.g. incorrect connections of electrodes
[Problem] To reduce the influence of a magnetic field generated from an end portion of a compensation coil on a magneto-sensitive element. [Solution] A magnetic sensor 1 comprises: an external magnetic body 30 that concentrates a magnetic field to be detected on a sensor chip 20; a compensation coil 60 that is wound around the external magnetic body 30 by means of a bobbin part 51 of a molding member 50; and a connection terminal 71 that is secured to a terminal securing part 52 of the molding member 50, and to which one end of the compensation coil 60 is connected. The terminal securing part 52 has a bobbin connection surface S1 and a terminal securing surface S2. Said one end of the compensation coil 60 has a segment 61 extending along the bobbin connection surface S1, and a segment 62 extending along the terminal securing surface S2. Thus, it is possible to reduce the influence of the magnetic field generated from an end portion of the compensation coil on a magneto-sensitive element.
[Problem] To enhance insulation between a conductor post, and a terminal electrode and a magnetic element body in a coil component in which a coil pattern and the conductor post are embedded in the magnetic element body. [Solution] A coil component 1 comprising: a magnetic element body M having a mounting surface 4; a coil pattern 130 embedded in the magnetic element body M; a conductor post P1, which is embedded in the magnetic element body M, and one end of which is connected to the coil pattern 130; a post protection film 15 provided between the conductor post P1 and the magnetic element body M; a cover insulation film 21 that covers the mounting surface 4 of the magnetic element body M; and a terminal electrode E1 provided on the cover insulation film 21 and connected to the other end of the conductor post P1 though an opening 21a in the cover insulation film 21. The post protection film 15 comprises an insulation material that is different from the cover insulation film 21.
[Problem] To mitigate an electric field generated in a drift layer when a reverse voltage is applied to a Schottky barrier diode that uses a gallium oxide. [Solution] A Schottky barrier diode 1 comprises: a drift layer 30 and a semiconductor substrate 20 comprising a gallium oxide; and an anode electrode 40 and a cathode electrode 50. The drift layer 30 has an outer peripheral trench 32 surrounding the anode electrode 40 in a plan view. The outer peripheral trench 32 includes an inner peripheral wall 33, an outer peripheral wall 34, a bottom surface 35, an inner peripheral corner portion 36, and an outer peripheral corner portion 37. The inner peripheral wall 33 and the inner peripheral corner portion 36 are covered by the anode electrode 40 with an insulation film 60 interposed therebetween, and the outer peripheral corner portion 37 is covered by a semiconductor material 70 of a conductivity type which is opposite to that of the drift layer 30. As a result, when a reverse voltage is applied, the electric field generated around the inner peripheral corner portion 36 in the drift layer 30 is mitigated.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
This electronic component support structure is a support structure for supporting an electronic component provided on a substrate, and is provided with a cover member that covers the electronic component. The cover member is an integral structure with a cover component that covers an interface portion for external connection to the substrate.
This copolymer has a structural unit that comprises one or more triazole skeletons selected from among formulae (1-1) to (1-3), and a structural unit that is represented by formula (2). (In the formulae, each of R1to R6represents one atom or group that is selected from among a hydrogen atom, a methyl group, a trifluoromethyl group, a nitrile group, a fluorine atom, a methoxy group, an ethyl group, an ethoxy group, a methoxymethyl group, a propyl group, an isopropyl group, a cyclopropyl group, a butyl group, an isobutyl group, a (trimethyl)methyl group, a (trimethyl)silyl group, a pentyl group, an isopentyl group, a t-pentyl group, a neopentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, a phenyl group, a tolyl group, a benzyl group and a phenoxymethyl group; or alternatively, each of R1to R6 forms a benzotriazole skeleton together with a triazole ring.)
C08F 226/06 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
This core support structure comprises: a first core; and a bearing member that bears the first core. The bearing member has: a bottom wall section on which the bottom surface of the first core is placed; and side wall sections that face side surfaces of the first core. The bottom wall section and/or the side wall sections have formed thereon contact avoidance sections for avoiding contact with corners of the first core.
This negative electrode for a zinc battery comprises a nonporous current collector and a negative electrode mixture layer which is held by the current collector and contains at least one of zinc, a zinc alloy, and a zinc-containing compound. The negative electrode has a current collector-exposed section in which the negative electrode mixture layer is not disposed, in a portion located at the outermost circumferential surface when wound.
This system (A) for recovering an antigen in a solvent comprises charged particles, a mixing unit (4), and a recovery unit (7), wherein: the charged particles each contain 3-70 mol% of a cationic lipid, 1-20 mol% of a PEG-containing lipid, and 20-50 mol% of cholesterol; the surfaces of the charged particles are modified with antibodies; the average zeta potential of the charged particles is -20 to +15 mV; the mixing unit (4) is configured such that the charged particles are added to a solvent (C) and the charged particles and the solvent (C) are stirred in the mixing unit (4); the recovery unit 7 is configured to recover the charged particles mixed with the solvent (C); and the recovery unit (7) is an anionic adsorber that includes an adsorption carrier having a surface on which a compound having an anionic functional group is immobilized.
[Problem] To reduce the influence of coupling between a plurality of inductors in an electronic component which has a structure in which the inductors are provided on a substrate. [Solution] An electronic component 100 comprises: a circuit pattern P1 that includes an inductor L1; a circuit pattern P2 that includes an inductor L2; and a connection capacitor Ck connected between the circuit patterns P1, P2. The connection capacitor Ck has capacitor electrodes E1, E2. The capacitor E1 is connected to a winding pattern 35 that constitutes the inductor L1.
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
[Problem] To enhance freedom of design and prevent the joining of two coil patterns, in a composite electronic component having a structure in which an electronic component is embedded. [Solution] A composite electronic component 1 comprises: coil patterns 41, 42 that are provided to a conductor layer C3 and are arranged with a gap G1 therebetween, without having a ground pattern interposed therebetween; a ground pattern GP that is provided to a conductor layer C4 and overlaps with the gap G1 in plan view; an electronic component 2 that is embedded in an insulation layer 12; and a plurality of external terminals.
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
This toilet seat device comprises: a toilet seat part; and a body part to which the toilet seat part is detachably attached. The body part transmits power to the toilet seat part through wireless power transmission. The toilet seat part receives the power from the body part through the wireless power transmission, and is provided with a load to which the power received from the body part is supplied. At least one of the toilet seat part and the body part is provided with an output adjustment unit that adjusts a power value of the power outputted from the toilet seat part to the load without wireless communication between the toilet seat part and the body part.
This polymer includes at least one structural unit selected from structural units represented by formula (1) and formula (2) (in the formulae, X is a divalent linking group; A is a halogen atom or an alkyl group which has 1-5 carbon atoms and may have a substituent; and M is a cation).
This electronic component comprises: a first resonance circuit that is configured to include a first inductor and a first capacitor; and a second resonance circuit that is configured to include a second inductor, which is magnetically coupled to the first inductor, and a second capacitor. The first resonance circuit includes a third inductor that is electrically series-connected to the first inductor. The third inductor is arranged to be magnetically coupled to the second inductor.
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
35.
COPOLYMER, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC FILM, AND PIEZOELECTRIC ELEMENT
This copolymer includes: a structural unit represented by a formula (1) (R1is any one selected from among a hydrogen atom, a methyl group, a dimethyl group, an ethyl group, an isopropyl group, an isobutyl group, a phenyl group, and a benzyl group, R2is a hydrogen atom or a methyl group, or R1and R2 form a benzooxazolidinone skeleton together with an oxazolidinone ring); and a structural unit represented by formula (2).
C08F 226/06 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
This power conversion device according to an aspect of the present invention comprises: a first power terminal that has two connecting terminals; a voltage sensor that is able to detect the voltage between the two connecting terminals; a switching circuit that is connected to the first power terminal; a transformer that has a first winding that is connected to the switching circuit, and a second winding; a rectifying circuit that is connected to the second winding; a smoothing circuit that is connected to the rectifying circuit; a second power terminal that is connected to the smoothing circuit; and a control circuit that is able to control the operations of the switching circuit and the rectifying circuit. The control circuit is able to cause the rectifying circuit to operate so as to supply power from the second power terminal toward the first power terminal in a second period before a first period for supplying power from the first power terminal toward the second power terminal, and is able to detect a short circuit between the two connecting terminals by performing a comparison operation for comparing the voltage detected by the voltage sensor and a predetermined threshold voltage within the period of the second period.
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
37.
MAGNETIZED ROTATING ELEMENT, MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND METHOD FOR MANUFACTURING MAGNETIZED ROTATING ELEMENT
The magnetized rotating element according to the present invention is provided with spin-orbit torque wiring, a first ferromagnetic layer, first via wiring, and second via wiring. The first ferromagnetic layer opposes at least a portion of the spin-orbit torque wiring and is between the first via wiring and the second via wiring when viewed from the stacking direction. The spin-orbit torque wiring has a first region and a second region that do not overlap the first ferromagnetic layer and a third region that overlaps the first ferromagnetic layer when viewed from the stacking direction. The first region is more crystalline than the third region.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
The present invention provides a magnetization rotation element comprising a spin-orbit torque wire, a first ferromagnetic layer, a first columnar body, a second columnar body, and a first conductive layer. The first ferromagnetic layer faces at least a portion of the spin-orbit torque wire. The first conductive layer is in contact with the spin-orbit torque wire at a position that does not overlap the first ferromagnetic layer as viewed from a laminating direction. The first columnar body penetrates the spin-orbit torque wire and is in contact with the spin-orbit torque wire and the first conductive layer. The second columnar body is in contact with the spin-orbit torque wire at such a position that the second columnar body and the first columnar body sandwich the first ferromagnetic layer as viewed from the laminating direction.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
This domain wall displacement element comprises a first magnetoresistance effect element and a first transistor. A first domain displacement layer of the first domain displacement layer is electrically connected to the first active region of the first transistor. The length in a first direction of the first magnetoresistance effect element is greater than the length in a second direction. The length in the first direction of the first gate is greater than the length in the second direction. The length in the first direction of the first magnetoresistance effect element is greater than the length in the first direction of the first gate. A first gate length direction that joins the first active region and the second active region crosses the first direction.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
The present invention provides an all-solid-state secondary battery which is provided with: a multilayer body that is obtained by stacking a positive electrode layer that contains a positive electrode active material and a negative electrode layer that contains a negative electrode active material, with a solid electrolyte layer being interposed therebetween; a positive electrode external terminal which is bonded to the positive electrode layer at a first surface among the lateral surfaces of the multilayer body; and a negative electrode external terminal which is bonded to the negative electrode layer at a second surface that is different from the first surface. With respect to this all-solid-state secondary battery, the positive electrode layer expands in a direction from the first surface toward the second surface; the negative electrode layer expands in a direction from the second surface toward the first surface; and the multilayer body is provided with a void in at least one region that is selected from among a region that is surrounded by the positive electrode layer and the first surface, a region that is surrounded by the positive electrode layer, the solid electrolyte layer and the first surface, a region that is surrounded by the negative electrode layer and the second surface, and a region that is surrounded by the negative electrode layer, the solid electrolyte layer and the second surface.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
[Problem] To provide a thin-film capacitor having excellent heat radiation characteristics. [Solution] A thin-film capacitor 10 comprises: a lower electrode layer 11 made of a metal foil; an upper electrode layer 13 that covers one surface 11A of the lower electrode layer 11 with a dielectric layer 12 therebetween; a passivation layer 14 that covers the one surface 11A of the lower electrode layer 11 so as to have the dielectric layer 12 and the upper electrode layer 13 embedded therein; terminal electrodes 21, 22 provided on the passivation layer 14; a via conductor 31 that is provided so as to penetrate the passivation layer 14 and that connects the terminal electrode 21 and the lower electrode layer 11; and a via conductor 32 that is provided so as to penetrate the passivation layer 14 and that connects the terminal electrode 22 and the upper electrode layer 13. The terminal electrode 21 has a larger plane size than the terminal electrode 22, and the via conductor 31 has a larger cross-sectional area than the via conductor 32.
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
This code conversion method comprises a conversion step for converting a first calculation model, in which options are expressed by a first expression method and which is applicable to an Ising model or a QUBO, into a second calculation model in which options are expressed by a second expression method and which is applicable to an Ising model or a QUBO. In the conversion step, simultaneous equations, in which components of energy obtained on the basis of the first calculation model match components of energy obtained on the basis of the second calculation model, are solved, and a Hamiltonian partial matrix to be used in arithmetic operation of the second calculation model is obtained.
This negative electrode active material layer comprises a negative electrode active material and a fibrous material. The negative electrode active material contains silicon. The fibrous material contains at least one type of substance selected from the group consisting of titanic oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The fiber length of the fibrous material falls within the range of 20 μm to 150 μm. The value of the layer thickness divided by the fiber length falls within the range of 0.4 to 1.0.
This non-reciprocal circuit element comprises a metal layer, a loss layer, and a magnet. The metal layer comprises a first terminal, a second terminal, and a third terminal. The loss layer comprises a magnetic body and an absorber. The magnetic body overlaps with a first region of the metal layer in a thickness direction. The absorber overlaps with a second region of the metal layer in the thickness direction. The magnet and the metal layer sandwich at least the magnetic body in the thickness direction. When viewed from the thickness direction, the shortest width between a first side connecting the first terminal with the second terminal of the metal layer and a second side of the absorber on the first terminal/second terminal side is shorter than the width between a first straight line connecting both ends of the first side and a second straight line connecting both ends of the second side.
This negative electrode active material layer comprises a negative electrode active material and acicular particles. The negative electrode active material contains silicon. The acicular particles include at least one type selected from the group consisting of titanic oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The length of the minor axis of the acicular particles falls within the range from 0.1 μm to 0.5 μm. The aspect ratio of the acicular particles falls within the range from 1.2 to 15.0.
This spin inductor comprises a layered body that includes: a first inductor layer; a spacer layer; and a second inductor layer. The first inductor layer comprises a first wiring layer and a first ferromagnetic layer that adjoins the first wiring layer. The second inductor layer comprises a second wiring layer and a second ferromagnetic layer that adjoins the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.
This magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer, wherein the nonmagnetic layer is present between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic layer undulates with respect to a flat plane that is perpendicular to the stacking direction.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Provided is a calculation model that can be applied to the Ising model or QUBO, wherein a plurality of choices in a combinatorial optimization problem are assigned to any of the possible values of one or more binary variables, and one of the binary variables fixed on the basis of constraints imposed on the combinatorial optimization problem.
G06N 99/00 - Subject matter not provided for in other groups of this subclass
G06N 10/80 - Quantum programming, e.g. interfaces, languages or software-development kits for creating or handling programs capable of running on quantum computers; Platforms for simulating or accessing quantum computers, e.g. cloud-based quantum computing
49.
MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT
A magnetoresistive effect element according to the present invention is provided with a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is positioned between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic layer comprises a first central region and a first outer peripheral region that is positioned outside the first central region. The maximum thickness of the first outer peripheral region is larger than the average thickness of the first central region.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
50.
CIRCUIT BOARD AND METHOD FOR MANUFACTURING MOUNTING BOARD
This circuit board comprises a base material, at least a pair of terminals provided on the base material, a bonding material which includes a metal element and is disposed on the terminals, and a wall of an insulating material that rises from the base material in a height direction orthogonal to a main surface of the base material. The pair of terminals and the bonding material are disposed inside the wall, and at least one wall-frame portion of the wall has at least one groove portion formed therethrough from an inner peripheral surface to an outer peripheral surface thereof.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
A battery (1) comprises: a positive electrode (3) including manganese dioxide and graphite; a negative electrode (5) containing zinc; an electrolyte in which the positive electrode (3) and the negative electrode (5) are immersed; and polyethyleneimine ethoxylate contained in the negative electrode (5) or in the electrolyte.
Provided is a pulse wave detection system comprising: a detection unit that is brought into contact with an arm to be subjected to pulse wave detection; a swinging section that has the detection unit provided thereto and makes it possible to swing the detection unit; and a calculation unit that acquires a pulse wave signal on the basis of a signal detected by the detection unit.
A61B 5/02 - Measuring pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography; Heart catheters for measuring blood pressure
53.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
An information processing device comprising a prescription candidate output unit that outputs output information containing Chinese herbal medicine candidate information indicating candidates of Chinese herbal medicines to be prescribed to a first subject, on the basis of first waveform information of a pulse waveform of the first subject.
G16H 20/10 - ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance relating to drugs or medications, e.g. for ensuring correct administration to patients
G16H 50/00 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics
54.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing device comprises a prescription candidate output unit that, on the basis of a first time frequency spectrum image indicating a first time frequency spectrum corresponding to a waveform of a pulse wave of a first subject, outputs output information including Chinese medicine candidate information which indicates a candidate of a Chinese medicine to be prescribed to the first subject.
G16H 20/10 - ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance relating to drugs or medications, e.g. for ensuring correct administration to patients
G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems
A measurement device according to this embodiment comprises: a first fixing body; a sensor fixing body that fixes a sensor for detecting a biological signal; and said sensor, wherein the measurement device has a structure in which the first fixing body and the sensor fixing body are separated.
[Problem] To provide a magnetism detection system which is capable of measuring magnetism over a wide range while using a reduced number of magnetic sensors. [Solution] A magnetism detection system 100 comprises: a shield box 200 which has magnetic shields S1-S3 that surround a measurement space 230; a magnetic sensor 40 which is fixed to the shield box 200 in the measurement space 230; a sample stage 300, at least part of which is inserted into the measurement space 230; and driving mechanisms 141-143 which change the relative positional relation of the sample stage 300 and the shield box 200. Thus, the relative positional relation of the sample stage 300 and the shield box 200 can be changed by the driving mechanisms 141-143, and it is therefore possible to measure magnetism over a wide range with one magnetic sensor 40 or a small number of magnetic sensors 40.
[Problem] To provide an antenna module having an electronic component such as an RFIC is built in. [Solution] An antenna module 100 comprising a core substrate C, an outermost insulating layer 10, and a resin layer 20 that is provided therebetween and has an RFIC 60 embedded therein. The core substrate C has: a core layer 40; insulating layers 30 and 50 that sandwich the core layer 40; conductor layers L3-L5 and an antenna layer L6; a through-hole conductor 70 that connects power-feed patterns F1, F2; a via conductor 71 that connects power-feed patterns F1, F3; and a via conductor 72 that connects an antenna pattern ANT and the power-feed pattern F2. The resin layer 20 has a conductor layer L2 connected to an RFIC 60. The thickness of the conductor layer L3 is thicker than the thickness of the conductor layer L2, and as a result, cracking and disconnection in the conductor layer L3 are made less likely to occur while causing the conductor layer L2 to have a fine pitch.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Inoue Yukari
Terada Tomohiro
Kimura Junichi
Uehara Masato
Hirata Kenji
Yamada Hiroshi
Akiyama Morito
Abstract
Provided is a nitride that comprises zinc and a group 4 element. The group 4 element contained in the nitride is at least one element from the group consisting of titanium and zirconium. The zinc content of the nitride is expressed as [Zn] at%. The total group 4 element content of the nitride is expressed as [M] at%. In the nitride, [M] / ([Zn] + [M]) is greater than 20% and less than 50%.
H10N 30/00 - Piezoelectric or electrostrictive devices
H10N 30/074 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/09 - Forming piezoelectric or electrostrictive materials
This fixation structure comprises: a structural body; a first magnetic part and a second magnetic part facing each other in a first direction, and fixed to the structural body; and a spacer member disposed between the first magnetic part and the second magnetic part. A gap is formed in the first direction between the spacer member and the structural body to absorb positional errors of the first magnetic part and the second magnetic part in the first direction.
F16B 1/00 - Devices for securing together, or preventing relative movement between, constructional elements or machine parts
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
H01F 37/00 - Fixed inductances not covered by group
H02M 3/00 - Conversion of dc power input into dc power output
[Problem] To mitigate the discontinuity of impedance while securing the symmetry of a differential signal line. [Solution] A coil component 100 comprises: coils C1, C2 which are embedded in a body 50 containing a magnetic material and are arranged in an X-direction with a Z-direction serving as an axial direction; terminal electrodes 61, 62 which are connected to one end and the other end of the coil C1, respectively; and terminal electrodes 63, 64 which are connected to one end and the other end of the coil C2, respectively. The terminal electrodes 62, 61, 63, 64 are exposed from a mounting surface 51, and arranged in this order in the X-direction. A region where no magnetic material is present is included between the coils C1 and C2. Accordingly, due to the weakening of the coupling between the coils C1 and C2, it is possible to prevent a deterioration in signal quality of a differential signal.
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
This conductive film comprises: a substrate 1; a first resin layer 10 provided on the substrate 1; a second resin layer 20 which is provided on the first resin layer 10 and has a trench 25 open in a surface on the opposite side to the first resin layer 10; and a conductive layer 30 provided on the trench 25. The first resin layer 10 includes a first resin section 12 and a plurality of first inorganic particles 11. At least some of the plurality of inorganic particles 11 partially bulge from the first resin section 12 toward the second resin layer 20 side.
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
This projector module (10000) can be used in a retinal projection display device, and is movable via a moving means. The projector module (10000) comprises a laser module (1000) having a plurality of laser chips, a collimation lens (2000) that converts light from the laser module (1000) into parallel light rays, and a light scanning device (3000) that changes the direction of and scans the light from the collimation lens (2000), and the relative positions of the laser module (1000), the collimation lens (2000), and the light scanning device (3000) are fixed.
00) before stretching at most equal to 2×10-2 [Ωmm], wherein: the metal powder includes scale-like powder; and the proportion of the resin is 8 wt% to 20 wt% inclusive.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/134 - Electrodes based on metals, Si or alloys
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
H01M 4/134 - Electrodes based on metals, Si or alloys
H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
This nickel hydrogen secondary battery 2 comprises an outer can 10 having an opening on the upper edge thereof, an electrode group 22 accommodated together with an alkaline liquid electrolyte within the outer can 10, and a sealing body 11 secured by crimping to the opening portion of the outer can 10 with a gasket 12 interposed therebetween, the gasket 12 containing a polyamide resin having a weight-average molecular weight of 40,000 or greater.
The present invention relates to a conductive film provided with a film-like base material and a conductive layer provided on one major surface side of the base material. The conductive layer comprises a first metal layer including a first metal, and a second metal layer including a second metal different from the first metal, the first and second metal layers being provided in order from the base material side. The first metal layer contains a grain boundary.
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
The rectenna device according to the one embodiment of the present invention comprises: an antenna unit which can receive microwaves; rectification circuits which are connected to the antenna unit and can rectify electric power signals supplied from the antenna unit; an electric power conversion circuit which can generate DC electric power on the basis of output electric power of the rectification circuits; and a control circuit which can control an operation of the electric power conversion circuit on the basis of output currents of the rectification circuits.
H02J 50/27 - Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves characterised by the type of receiving antennas, e.g. rectennas
This rectenna device according to one embodiment of the present invention comprises: an antenna unit that is able to receive microwaves; a plurality of rectifying circuits that are each connected to the antenna unit and capable of rectifying power signals supplied from the antenna unit; a plurality of power conversion circuits that are respectively provided in correspondence to the plurality of rectifying circuits and are capable of generating direct current power on the basis of the output power of the corresponding rectifying circuit; a power output terminal that is connected to output terminals of the plurality of power conversion circuits; and a plurality of correction control circuits that are respectively provided in correspondence to the plurality of rectifying circuits and respectively provided in correspondence to the plurality of power conversion circuits, and that are each capable of correcting the output voltage of the corresponding power conversion circuit on the basis of one or more of the output voltage, the output current, and the circuit temperature of the corresponding rectifying circuit.
H02J 50/27 - Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves characterised by the type of receiving antennas, e.g. rectennas
H02J 50/40 - Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
70.
SAMARIUM-IRON-NITROGEN BASED MAGNET POWDER AND SAMARIUM-IRON-NITROGEN BASED MAGNET
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Hashimoto, Ryuji
Okada, Shusuke
Abstract
A samarium-iron-nitrogen based magnet powder, including a lanthanoid (Ln), iron (Fe), bismuth (Bi), tungsten (W), and nitrogen (N), wherein: the lanthanoid includes samarium (Sm); by atom ratio, the ratio ((Bi/(Ln+Fe+Bi+W)) of bismuth relative to the sum of the lanthanoid+iron+bismuth+tungsten is 1.00 at% or less; by atom ratio, the ratio ((W/(Ln+Fe+Bi+W)) of tungsten relative to the sum of the lanthanoid+iron+bismuth+tungsten is 0.05-0.60 at%; and by atom ratio, the ratio (W/Bi) of tungsten relative to bismuth is 1.0-30.0.
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
[Problem] To lower the on-resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed from a gallium oxide; an anode electrode 40 and a p-type semiconductor layer 60 that are in contact with the drift layer 30; an n-type semiconductor layer 70 that is in contact with the anode electrode 40 and the drift layer 30; a metal layer 80 that is provided between the n-type semiconductor layer 70 and the p-type semiconductor layer 60; and a cathode electrode 50 that is in contact with the semiconductor substrate 20. The on-resistance is thus lowered in the lead up to the forward current flowing to the p-n junction section since the n-type semiconductor layer 70 functions as a current path.
The present invention provides a crucible G which is used for the growth of an oxide single crystal, and is provided with a plurality of oxide plates G1 to G10 that are stacked on and bonded with each other in the thickness direction; and the respective additive concentrations in the oxide plates G1 to G10 are different from each other. A crystal production method according to the present invention grows an oxide single crystal by bringing a seed crystal into contact with the exposed surface of a melt in a crucible and moving the position of the exposed surface in the vertical direction. With respect to a single crystal of gallium oxide, it is preferable that the additive concentrations in the growth axis direction are within the range of ±5% of the average.
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
A power converter according to an aspect of the present invention comprises: a first power terminal; a switching unit; a transformer; a rectification unit having a switching circuit including first and second switching elements; a smoothing unit; a second power terminal; a control unit; and a drive unit capable of driving the switching circuit. The switching circuit has a first element provided in a first path connecting a control terminal with a first terminal of the first switching element and capable of clamping a voltage. The drive unit can output a first control signal from a first output terminal and output a second control signal from a second output terminal. The control unit can control the operation so that power is supplied from the second power terminal toward the first power terminal in a period different from a period during which power is supplied from the first power terminal toward the second power terminal, and can also set the output impedance of the first output terminal in the drive unit to a high impedance state.
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
An information processing device according to one embodiment of the present invention comprises: a plurality of magnetic circuits; at least one input terminal that is connected to at least one of the plurality of magnetic circuits; at least one output terminal that is connected to at least one of the plurality of magnetic circuits; and at least one connection unit that electrically or magnetically couples at least two of the magnetic circuits from among the plurality of magnetic circuits.
[Problem] To increase the surge resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed from a gallium oxide; an anode electrode 40 that is in contact with the drift layer 30; a cathode electrode 50 that is in contact with the semiconductor substrate 20; and a p-type semiconductor layer 60 that is in contact with the anode electrode 40 and the drift layer 30. The p-type semiconductor layer 60 includes a first p-type semiconductor layer 61 that is in contact with the anode electrode 40 and a second p-type semiconductor layer 62 that is in contact with the drift layer 30. The upper-end level of the valence band of the second p-type semiconductor layer 62 is lower than the upper-end level of the valence band of the first p-type semiconductor layer 61. Surge resistance can thus be increased since the two p-type semiconductor layers 61, 62 having different energy levels are used.
This learning program is for, in a neural network or a dynamical system, performing calculation for updating an estimated value of a weight or a state variable. The learning program performs: a first calculation for obtaining, from a pre-updated weight, a Karman gain by using an ensemble Karman filter method; a second calculation for adding, to the pre-updated weight, a result obtained by multiplying, by the Karman gain, an error between a training signal and an inference result using the pre-updated weight to obtain a post-updated weight in a first bit expression; and a third calculation for performing bit quantization of the post-updated weight represented by the first bit expression and for changing the result obtained therefrom to a second bit expression in which the word length and the length of a decimal part are shorter than those in the first bit expression.
[Problem] To provide a sensor holder having improved operation efficiency in sensor positioning. [Solution] A magnetic sensor holder 100 comprises: a sensor case 20; a sensor guide 30 into which the sensor case 20 is inserted; a lever 40 including a lock gear 44 engaged with a rack gear 23 so as to allow movement of the sensor case 20 in a +Z direction and to inhibit movement of the sensor case in a -Z direction; a coil spring 50 which comprises a non-magnetic body and which biases the sensor case 20 in the -Z direction; and an elastic body ring 60 that biases the lever 40 so as to maintain the engaged state between the rack gear 23 and the lock gear 44. When a ratchet releasing operation is carried out by using the lever 40, the movement of the sensor case 20 in the Z direction is enabled.
A bonded structure in which an electronic component and a wiring substrate are bonded to each other, the bonded structure comprising, in order from the electronic component side, a first metal layer comprising a metal that forms an inter-metallic compound with Sn, an inter-metallic compound layer composed of an inter-metallic compound comprising Sn, and a second metal layer comprising Sn, wherein the thickness of the second metal layer is less than or equal to 50% of a total of the thicknesses of the first metal layer, the inter-metallic compound layer, and the second metal layer.
H05K 3/32 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
80.
SOLID ELECTROLYTE LAYER AND ALL-SOLID-STATE SECONDARY BATTERY
34444 type crystal structure. With respect to this solid electrolyte layer (3), it is preferable that the ratio of the volume of the first phase region (31) to the volume of the second phase region (32) is 0.1 to 9.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
34444-type crystal structure. Preferably, the ratio of the volume of the first phase region (31) to the volume of the second phase region (32) in the solid electrolyte layer (3) according to the present invention is 0.1 to 9.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
In the present invention, an antenna pattern has: a radiation conductor; a first power feed line and a second power feed line that are drawn out from the radiation conductor to an end part side of a substrate and that feed power to the radiation conductor; and a first terminal and a second terminal respectively connected to the first power feed line and the second power feed line. A ground pattern has: a center part disposed between the first terminal and the second terminal; a first lateral part disposed so as to sandwich the first terminal between the first lateral part and the center part; a second lateral part disposed so as to sandwich the second terminal between the second lateral part and the center part; a first connection part for connecting the center part and the first lateral part to each other; and a second connection part for connecting the center part and the second lateral part to each other. The first connection part extends between the first terminal and the end part of the substrate, on one main surface of the substrate. The second connection part extends between the second terminal and the end part of the substrate, on the one main surface of the substrate.
H01Q 13/08 - Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
H01Q 1/38 - Structural form of radiating elements, e.g. cone, spiral, umbrella formed by a conductive layer on an insulating support
H01Q 21/08 - Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along, or adjacent to, a rectilinear path
H01Q 21/24 - Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
83.
MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY
This magnetization rotating element comprises a spin-orbit torque wire and a first ferromagnetic layer connected to the spin-orbit torque wire, wherein the spin-orbit torque wire includes an amorphous structure, and the amorphous structure is any one among an oxide, nitride, and oxynitride.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
84.
MAGNETIC ARRAY, CONTROL METHOD FOR MAGNETIC ARRAY, AND OPERATION PROGRAM FOR MAGNETIC ARRAY
This magnetic array comprises: a plurality of magnetoresistance effect elements; and a pulse application device that applies a pulse to at least one of the plurality of magnetoresistance effect elements. Each of the plurality of magnetoresistance effect elements comprises: a domain wall movement layer; a ferromagnetic layer; and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer. The pulse application device outputs a first pulse and a second pulse at different times. The voltages of the first pulse and the second pulse are both voltages by which it is possible to attain a current density greater than or equal to the critical current density required to move the domain wall of the domain wall movement layer. The second pulse is greater in voltage or pulse length than the first pulse. The pulse application device outputs the second pulse every set number of times that the first pulse is outputted or at a set probability.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
G06F 12/00 - Accessing, addressing or allocating within memory systems or architectures
G06G 7/60 - Analogue computers for specific processes, systems, or devices, e.g. simulators for living beings, e.g. their nervous systems
This transmission path comprises a line portion that linearly extends in a first direction on one major surface side of a dielectric, and a terminal portion that is connected to the end of the line portion. The line portion includes an open conductor portion having a conductor pattern with an opening, and a planar conductor portion that is electrically connected to the open conductor portion and in which a conductor lies in planar form. The planar conductor portion is spaced apart from the terminal portion in the first direction. The length of the planar conductor portion in the first direction is greater than or equal to the length thereof in a second direction orthogonal to the first direction.
abc4defh234364733234273941161834273103523242526272846243333222265322444466664444, HCOO, and O, and X is at least one element selected from the group consisting of F, Cl, Br, and I, 0.5 ≤ a < 6, 0 ≤ b < 6, 0 < c < 2, 0.1 < d ≤ 6.0, 0 < e ≤ 6.0, 0 < f ≤ 6.1, and 0 ≤ h ≤ 0.2 are satisfied, and in an X-ray diffraction pattern with CuKα as the radiation source, a peak is confirmed at diffraction angle 2θ = 22.3°±1.0°.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
This neuromorphic device has a plurality of paired elements, and a control device that controls each of the plurality of paired elements. Each of the plurality of paired elements includes a first magnetoresistive element, a second magnetoresistive element, and a readout electrode shared by the first and second magnetoresistive elements. The first magnetoresistive element and the second magnetoresistive element each have a reference layer, a magnetic recording layer, a non-magnetic layer, and two electrodes. The readout electrodes are connected across the reference layers of the first magnetoresistive element and the second magnetoresistive element. In a specific pair of elements from which signals are read, the control device reverses the flow direction of the read current, the flow direction being from the reference layer to the magnetic recording layer or from the magnetic recording layer to the reference layer, by means of the first magnetoresistive element and the second magnetoresistive element.
A current collector according to the present invention includes a resin layer 10 having a first surface, and a first metal layer 20 located at the first surface. The first metal layer contains aluminum as a main component, the thickness d of the first metal layer is 0.5-3 μm, and d and r satisfy the following formula (1), where r is the peak intensity ratio B/A, A being the intensity of the highest X-ray diffraction peak at a diffraction angle (2θ) in the range of 36-41° and B being the intensity of the highest X-ray diffraction peak at a diffraction angle (2θ) in the range of 43-48° in the measurement of the first metal layer by the X-ray diffraction method.
This magnetized rotary element comprises: spin-orbit torque wiring; and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which conductors are dispersed.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
90.
SENSOR CHIP, MAGNETIC SENSOR COMPRISING SAME, AND MAGNETIC SENSOR PRODUCTION METHOD
[Problem] To precisely position an external magnetic body with respect to a sensor chip. [Solution] After a sensor chip 20 is mounted on a substrate 10, an external magnetic body 30 is mounted on the substrate 10 so as to overlap with a magnetic body layer M1 in a view from a Y direction perpendicular to an element formation surface 21. At this time, the position of the external magnetic body 30 in an X direction is adjusted with reference to alignment marks 60, 61 which are provided to the sensor chip 20 and are visible from the upper surface 25 side of the sensor chip 20. Thus, it is possible to achieve a desired positional relation between the sensor chip 20 and the external magnetic body 30 at the time of assembly.
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
H01M 4/134 - Electrodes based on metals, Si or alloys
H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
[Problem] To provide a thin film capacitor in which a pair of terminal electrodes can be disposed on the same surface. [Solution] A thin film capacitor 1 is provided with: metal foil 10 that has an unroughened central section 13 and a roughened upper surface 11; a dielectric film D that covers the roughened upper surface 11 of the metal foil 10; an electrode layer 31 that is in contact with the metal foil 10; an electrode layer 32 that is not in contact with the metal foil 10 and is in contact with the dielectric film D; and an insulation member 21 disposed between the electrode layers 31, 32. The metal foil 10 has a groove 14 that is provided so as to penetrate the surface layer portion of the roughened metal foil 10 and exposes the unroughened central section 13. The insulation member 21 is in contact with the central section 13 of the metal foil 10 that is exposed at the bottom of the groove 14.
[Problem] To provide a thin film capacitor having a large capacitance. [Solution] A thin film capacitor 1 comprises: a metal foil 10, the main surfaces 11, 12 of which have been roughened; a dielectric film 13 which covers the main surfaces 11, 12; an electrode layer E1 which contacts the metal foil 10 via an opening provided in the dielectric film 13 and a surface of which is constituted by a metal terminal 41; an electrode layer E2 which contacts the dielectric film 13 without contacting the metal foil 10 and a surface of which is constituted by a metal terminal 42; and an electrode layer E3 which contacts the dielectric film 13 without contacting the metal foil 10. The electrode layers E2, E3 include an electrically conductive polymer layer 30 which contacts the dielectric film 13.
This resin cured product exhibits the scattering intensity peak maximum value when the scattering angle 2θ is in the range of 0.2° to 5° in a scattering profile measured by a small-angle X-ray scattering method, and exhibits a diffraction intensity peak when the diffraction angle 2θ is in the range of 10° to 25° and when the diffraction angle 2θ is in the range of 40° to 50° in a diffraction profile measured by a wide-angle X-ray diffraction method. The ratio of the maximum diffraction intensity peak P2 when the diffraction angle 2θ is in the range of 40° to 50° to the maximum diffraction intensity peak P1 when the diffraction angle 2θ is in the range of 10° to 25° is 0.15 or greater.
C08G 59/00 - Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by reaction of epoxy polycondensates with monofunctional low-molecular-weight compounds; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
According to the present invention, an internal electrode layer 3 includes therein a plurality of inner ceramic particles 36a within an observation range of a cross-section intersecting the internal electrode layer 3. The position of the inner ceramic particles 36a in the internal electrode layer 3 relative to the center position of the internal electrode layer 3 in the thickness direction is correlated with the position from the center position to the edge position, and the corresponding positions are indicated by the numbers 0-100. Such an index is referred to as Dsp. Inside the internal electrode layer 3, within a region of Dsp of 40 or less, preferably 30 or less, the inner ceramic particles 36a are present in an area of at least 50% of the total area of the inner ceramic particles 36a present within the observation range.
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/136 - Electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
An all-solid-state battery comprising a sintered body that has a positive electrode, a negative electrode, and a solid electrolyte layer interposed between the positive electrode and the negative electrode, wherein: the positive electrode contains an Ag-containing compound, a Li-containing transition metal oxide, and an oxide having a different composition from Li transition metal oxide; the oxide contains Ag; and at least some of the Ag-containing compound and the Li transition metal oxide are present on the interior of the positive electrode with the oxide therebetween.
A magnetic component according to an embodiment of the present invention comprises: a first substrate portion and a second substrate portion facing each other; a magnetic core that is provided on a surface of the second substrate portion facing the first substrate portion, and comprising five leg portions that magnetically couple the first substrate portion and the second substrate portion together, the five leg portions including a first leg portion, a second leg portion, a third leg portion, a fourth leg portion, and a fifth leg portion, the second leg portion and the third leg portion being disposed with the first leg portion therebetween in a first direction, the fourth leg portion and the fifth leg portion being disposed with the first leg portion therebetween in a second direction; a first winding wound around the five leg portions; and one or a plurality of second windings wound around four of the five leg portions other than the first leg portion. The first substrate portion has one or more recesses or one or more through holes that are provided in positions corresponding to one or more leg portions among the five leg portions.
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
patents
