A stacked electrode is provided on a strain resistance film, wherein: the strain resistance film contains Cr and Al; the stacked electrode has a contact layer that overlaps the strain resistance film, a diffusion prevention layer that overlaps the contact layer, and a mounting layer that overlaps the diffusion prevention layer; and the diffusion prevention layer or the mounting layer covers the contact layer so that an end surface of the contact layer is not exposed.
G01L 1/22 - Measuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
An all-solid-state secondary battery includes a laminate which includes a plurality of positive electrode layers each having a positive electrode active material layer, a plurality of negative electrode layers each having a negative electrode active material layer, and a plurality of solid electrolyte layers each containing a solid electrolyte, and wherein the positive and negative electrode layers are alternately laminated with the solid electrolyte layers interposed therebetween, wherein the plurality of solid electrolyte layers includes a first and a second outer solid electrolyte layer disposed on both end portion sides of the laminate in a lamination direction, and an inner solid electrolyte layer disposed between the first and second outer solid electrolyte layers, and both the first and second outer solid electrolyte layers are a thick-film outer solid electrolyte layer having a thickness more than that of the inner solid electrolyte layer.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
A laminated resin film includes: a resin layer; and a Cu film provided on one surface or both surfaces of the resin layer, in which in the Cu film, a peak intensity y of a (200) plane is 2 to 30 when a peak intensity of a (111) plane in X-ray diffraction measurement is set to 100, and Expression (1) is satisfied.
A laminated resin film includes: a resin layer; and a Cu film provided on one surface or both surfaces of the resin layer, in which in the Cu film, a peak intensity y of a (200) plane is 2 to 30 when a peak intensity of a (111) plane in X-ray diffraction measurement is set to 100, and Expression (1) is satisfied.
y≥2.5×−7.5 Expression (1)
(in Expression (1), y is the peak intensity of the (200) plane when the peak intensity of the (111) plane in the X-ray diffraction measurement is set to 100, and x is a peak intensity of a (220) plane when the peak intensity of the (111) plane in the X-ray diffraction measurement is set to 100.)
An electronic component includes a stack including a plurality of first conductors and a plurality of second conductors. The plurality of first conductors include a first conductor group. The plurality of second conductors include a second conductor group arranged in a region adjacent to a region where the first conductor group is arranged. The plurality of first conductors further include a third conductor group arranged in a region adjacent to the region where the second conductor group is arranged and located to sandwich, with the region where the first conductor group is arranged, the region where the second conductor group is arranged. The first conductor group constitutes a plurality of parallel resonant circuits. The second conductor group constitutes a serial resonant circuit. The third conductor group constitutes another parallel resonant circuit.
A branching filter includes a first diplexer, a second diplexer, and a third diplexer. An input end of the first diplexer is connected to an input port. An input end of the second diplexer and an input end of the third diplexer are connected to two output ends of the first diplexer, respectively. Two output ends of the second diplexer are connected to first and second output ports, respectively. Two output ends of the third diplexer are connected to third and fourth output ports, respectively.
This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
G11B 5/39 - Structure or manufacture of flux-sensitive heads using magneto-resistive devices
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
G11C 11/18 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
H01F 10/32 - Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
H03B 15/00 - Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, devices using spin transfer effects, devices using giant magnetoresistance, or using super-conductivity effects
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
In a method for manufacturing a laminated coil component, in which a laminated coil component is manufactured by laminating insulator sheets in order on which conductors having predetermined patterns are formed, the insulator sheets are laminated such that a distance in a lamination direction between a first lead-out conductor laminated first and a first coil conductor laminated next is larger than a distance in the lamination direction between a second lead-out conductor laminated last and a second coil conductor laminated immediately before the second lead-out conductor.
A backup power supply device includes: a storage battery charged with power from an external power supply; charge switches for charging the storage batter; discharge switches that are made from a field-effect transistor and that discharge the storage battery to a load device; a control unit for controlling the charge switches and the discharge switches; and a discharge suppression section connected in series to the discharge switches. The discharge suppression section suppresses leakage of current from the storage battery only when the control unit charges the storage battery, and the battery voltage exceeds an input voltage and the difference voltage between the battery voltage and the input voltage is less than a prescribed value.
This optical coupler for coupling a plurality of visible light beams having different wavelengths includes: a substrate made of a material different from lithium niobate; and an optical coupling function layer formed on a main surface of the substrate. The optical coupling function layer includes: two multimode-interference-type optical coupling parts; optical-input-side waveguides and an optical-output-side waveguide connected to one multimode-interference-type optical coupling part, and optical-input-side waveguides and an optical-output-side waveguide connected to the other multimode-interference-type optical coupling part. The multimode-interference-type optical coupling parts, the optical-input-side waveguides, and the optical-output-side waveguides are made of a lithium niobate film.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
An all-solid-state secondary battery includes a laminate which includes a plurality of positive electrode layers each having a positive electrode active material layer, a plurality of negative electrode layers each having a negative electrode active material layer, and a plurality of solid electrolyte layers each containing a solid electrolyte, and in which the positive electrode layers and the negative electrode layers are alternately laminated with the solid electrolyte layers interposed therebetween, and the plurality of solid electrolyte layers include an outermost solid electrolyte layer disposed on both end sides of the laminate in a lamination direction and being thinnest among the plurality of solid electrolyte layers, and an inner solid electrolyte layer disposed inward relative to the outermost solid electrolyte layer and being thicker than the outermost solid electrolyte layer.
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
11.
SWITCHING CONTROL UNIT, ELECTRIC POWER CONVERSION APPARATUS, AND ELECTRIC POWER SUPPLY SYSTEM
A switching control unit is applicable to an electric power conversion apparatus. The electric power conversion apparatus includes: a transformer; an inverter circuit including first switching devices; a synchronous rectifying circuit including second switching devices serving as rectifying devices; and a smoothing circuit. The switching control unit includes: a first current detection circuit detecting a peak current value of a secondary current; a second current detection circuit detecting an output current value; and a control circuit controlling respective operations of the first switching devices of the inverter circuit and respective operations of the second switching devices of the synchronous rectifying circuit. The control circuit sets a timing of switching from an on-state to an off-state of each of the second switching devices based on the peak current value detected by the first current detection circuit and the output current value detected by the second current detection circuit.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/5387 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
A laminated coil component includes: an element body having a first surface and a second surface facing each other in a first direction; a coil unit formed by laminating a plurality of coil conductors in a second direction orthogonal to the first direction inside the element body; a first lead-out conductor; and a second lead-out conductor. A first coil conductor adjacent to the first lead-out conductor in the second direction includes a first side portion extending along the first surface, on a first surface side. A second coil conductor adjacent to the second lead-out conductor in the second direction includes a second side portion extending along the second surface, on a second surface side. The first side portion has a larger line width than other side portions of the first coil conductor and the second side portion.
A high-frequency coil component includes a sealing portion containing a resin and a plurality of hollow particles, and a coil portion composed of a wound conductive wire. The coil portion is sealed in the sealing portion. The resin includes a low-dielectric resin having a relative permittivity εr1 of 2.00 or more and less than 3.00 at 23±2° C. A mass of the resin is represented by Mr. A total mass of the plurality of hollow particles is represented by Mp. Mr/(Mr+Mp) is 25% or more and 85% or less.
An all-solid-state battery includes a positive electrode layer including a positive electrode active material layer and a positive electrode current collector; a negative electrode layer including a negative electrode active material layer and a negative electrode current collector; a solid electrolyte layer; and an insulating film, in which the insulating film has therein a through-hole in which a laminate in which the positive electrode active material layer, the solid electrolyte layer, and the negative electrode active material layer are sequentially stacked is housed, the laminate and the insulating film are arranged between the positive electrode current collector and the negative electrode current collector, and an external shape of the insulating film is larger than external shapes of the positive electrode current collector and the negative electrode current collector when viewed in a plan view in a laminating direction of the laminate.
H01M 50/586 - Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries inside the batteries, e.g. incorrect connections of electrodes
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 50/59 - Means for preventing undesired use or discharge for preventing incorrect connections inside or outside the batteries characterised by the protection means
A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.
A method of estimating life of a nickel-metal hydride battery that accommodates a positive electrode plate and a negative electrode plate facing the positive electrode plate with a separator therebetween and containing a hydrogen absorbing alloy together with an electrolyte is disclosed. A charge phase of charging the nickel-metal hydride battery and a discharge phase of discharging the nickel-metal hydride battery after the charge phase constitutes one cycle for charge/discharge of the nickel-metal hydride battery. The method includes: determining a rate of change after one charge/discharge cycle of a surface area of the negative electrode plate which is a boundary face in contact with the electrolyte, and determining an amount of corrosion of the hydrogen absorbing alloy based on the rate of change accumulated for n charge/discharge cycles to estimate the life of the nickel-metal hydride battery based on the amount of corrosion.
G01R 31/392 - Determining battery ageing or deterioration, e.g. state of health
G01R 31/367 - Software therefor, e.g. for battery testing using modelling or look-up tables
G01R 31/378 - Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] specially adapted for the type of battery or accumulator
19.
STRAIN RESISTANCE FILM, PHYSICAL QUANTITY SENSOR, AND METHOD FOR MANUFACTURING THE STRAIN RESISTANCE FILM
G01B 7/16 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
A flat coil comprises a coil main portion having a flat shape; a lead portion drawn out from the coil main portion; and a heat-dissipating portion provided to the coil main portion at a location different from where the lead portion is drawn out from the coil main portion, the heat-dissipating portion meeting the coil main portion at a predetermined angle.
H01F 27/30 - Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
Provided is a battery including a battery element having a positive electrode, a negative electrode, and a solid electrolyte layer between the positive electrode and the negative electrode, and further including an exterior body covering the battery element, in which at least one of the positive electrode, the negative electrode, and the solid electrolyte layer includes a solid electrolyte represented by Formula (1) of Li3+aE1-bGbDcXd-e, and a moisture content in a housing space between the battery element and the exterior body is less than 1100 ppmv.
A plurality of through-hole conductors include a first through-hole conductor and a second through-hole conductor between coil conductors adjacent each other. Each of the first through-hole conductor and the second through-hole conductor includes a first end and a second end. The first end included in the second through-hole conductor is coupled to the second end included in the first through-hole conductor, and has a width larger than a width of the second end included in the first through-hole conductor. The first end included in the first through-hole conductor has a width larger than the width of the second end included in the first through-hole conductor. The second end included in the second through-hole conductor has a width smaller than the width of the first end included in the second through-hole conductor.
A gas sensor with improved sensitivity. The gas sensor comprises an active sensor unit, a reference sensor unit and a temperature control circuit. The active sensor unit has an active detector. The reference sensor unit has a reference detector. The temperature control circuit is provided and configured to keep a detector at a predetermined temperature.
G01N 27/16 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
An electronic device includes an element body. The element body includes at least two internal electrode layers and a dielectric layer laminated between the internal electrode layers. Ni oxide particles exist at a boundary between the internal electrode layers and the dielectric layer. The dielectric layer is in contact with the internal electrode layers at first and second boundaries. The dielectric layer includes a first dielectric large particle and a second dielectric large particle. The first dielectric large particle is in contact with at least one of the Ni oxide particles existing at the first boundary and in contact with one of the internal electrode layers at the second boundary. The second dielectric large particle is in contact with at least one of the internal electrode layers at the first boundary and in contact with at least one of the Ni oxide particles existing at the second boundary.
The electronic component includes an element body, an internal conductor, a cover layer, and a conductor layer. The internal conductor is disposed in the element body. The cover layer is disposed on an outer surface of the element body and has an electrical insulation property. The conductor layer is disposed on the cover layer and is electrically connected to the internal conductor. The conductor layer includes a portion. The portion protrudes toward the element body through the cover layer and is physically and electrically connected to the internal conductor. The conductor layer is electrically connected to the internal conductor.
A computer-readable medium capable of estimating a distribution of an electromagnetic field intensity of radiant interference waves on a virtual surface surrounding a test piece with high accuracy while inhibiting an increase of a time required for a radiant interference wave test for radiant interference waves having a frequency included in a wider frequency band is provided. A computer-readable medium storing instructions which, when executed by a computer, cause the computer to execute a first calculation step of calculating an upper limit value of a measurement interval of radiant interference waves using an antenna based on positions of a plurality of electromagnetic wave sources according to a test piece radiating the radiant interference waves and a relative positional relation between the antenna measuring the radiant interference waves and the test piece.
An electronic component includes: a first internal electrode which is provided inside an element body and is drawn on a first main surface corresponding to a mounting surface; a second internal electrode which is provided inside the element body, is provided at a position different from the first internal electrode when viewed from a third direction, and is drawn on the first main surface; a third internal electrode which is provided inside the element body, is provided at a position facing the first internal electrode and the second internal electrode in the third direction, and is drawn on the first main surface; wherein the first internal electrode and the third internal electrode face each other in the third direction to form a first capacitor portion, and wherein the second internal electrode and the third internal electrode face each other in the third direction to form a second capacitor portion.
A magnetic field detection apparatus includes a magnetoresistive effect element and a coil. The coil includes first and second tier parts opposed to each other in a first axis direction, with the magnetoresistive effect element interposed therebetween. The coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect element in a second axis direction. The first tier part includes first conductors extending in a third axis direction, arranged in the second axis direction and coupled in parallel to each other. The second tier part includes a second conductor or second conductors extending in the third axis direction, the second conductors being arranged in the second axis direction and coupled in parallel to each other. The first conductors each have a width smaller than a width of the second conductor or each of the second conductors.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
A magnetoresistance effect element having a large MR ratio is provided.
A magnetoresistance effect element having a large MR ratio is provided.
This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.
G11B 5/39 - Structure or manufacture of flux-sensitive heads using magneto-resistive devices
H01F 10/16 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
An electronic device includes an element body. The element body includes a first internal electrode layer, a second internal electrode layer, and a dielectric layer laminated between the first internal electrode layer and the second internal electrode layer. Ni oxide particles exist at a first boundary between the first internal electrode layer and the dielectric layer. The dielectric layer includes a dielectric large particle in contact with both of the Ni oxide particles at the first boundary and the second internal electrode layer.
An electronic component includes: a first internal electrode provided in an element body; a second internal electrode provided in the element body; a third internal electrode provided in the element body and drawn out to a first side surface; and a fourth internal electrode provided in the element body and drawn out to a second side surface. The third internal electrode and the fourth internal electrode are electrically connected to each other through an external connection conductor formed on at least the first side surface and the second side surface. In a first direction, the first internal electrode faces the third internal electrode without facing the second internal electrode and the fourth internal electrode. In the first direction, the second internal electrode faces the fourth internal electrode without facing the first internal electrode and the third internal electrode.
An R-T-B permanent magnet that contains: main-phase grains composed of an R2T14B compound (where R is a rare earth element, T is a transition metal element, and B is boron); and grain boundaries. R includes Ce. The grain boundaries include multi-grain grain boundaries that are adjacent to three or more main-phase grains. The multi-grain grain boundaries include an R-rich phase, and lamellar or acicular R-T precipitates are present in the R-rich phase.
H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
B22F 3/16 - Both compacting and sintering in successive or repeated steps
B22F 3/24 - After-treatment of workpieces or articles
B22F 9/02 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes
B22F 9/04 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
This optical waveguide detection element includes a substrate, an optical waveguide layer formed on the substrate, and a photodetector. The optical waveguide layer includes a first optical waveguide in which visible light having a wavelength of 380 nm to 800 nm propagates, a second optical waveguide in which near-infrared light having a wavelength of 801 nm to 2000 nm propagates, and a third optical waveguide in which light propagates to a light receiving surface of the photodetector. A visible light output port of the first optical waveguide from which the visible light is output, a near-infrared light output port of the second optical waveguide from which the near-infrared light is output, and a reflected light input port of the third optical waveguide to which the near-infrared light is reflected and returned are arranged on one end surface of the optical waveguide layer.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A method of manufacturing an R-T-B based sintered magnet comprises heating a composition to give an alloy powder, cleaning the alloy powder using a cleaning solution, molding the cleaned alloy powder to give a green compact, and sintering the green compact to give a sintered body. The composition comprises a rare-earth metal element, a transition metal element, boron, and a metal halide. The metal halide comprises at least one selected from the group consisting of an alkali metal halide, an alkaline earth metal halide, and a halide of the rare-earth metal element. The heating is performed at a heating temperature that is not lower than a melting point of the metal halide. The cleaning solution comprises an aprotic solvent and is capable of dissolving the metal halide.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
A dielectric composition including a tungsten bronze type composite oxide as a main component represented by (Ba1-xSrx)aRbZrcTadO30+0.5e in terms of an atomic ratio. In the dielectric composition, c=(2a+3b−10)−e and d=(20−2a−3b)+e are satisfied. R includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. In the dielectric composition, 0.000≤x≤0.500, 5.100≤a≤5.860, 0.000≤b≤0.100, and −0.150≤e≤0.150 are satisfied.
Disclosed herein is a magnetic field generator that includes a solenoid coil, a soft magnetic body disposed in an inner diameter area of the solenoid coil, and a signal generating part configured to supply an AC signal to the solenoid coil. Since the soft magnetic body is disposed in the inner diameter area of the solenoid coil, the reach of a magnetic field can be significantly expanded as compared with when an air-core coil is used.
A magnetic sensor used to detect a detection target substance in a sample includes a substrate having a first surface and a second surface, which is opposite the first surface and a magnetoresistive effect element provided on the first surface of the substrate. The resistance of the magnetoresistive effect element changes in accordance with an input magnetic field. A protective layer covers the top of the magnetoresistive effect element. The surface of the protective layer, which is positioned on top of the magnetoresistive effect element, has a prescribed surface roughness.
The present disclosure provides a coil device that can be reduced in height, has a small installation area of a case, and is excellent in heat dissipation. A coil device according to the present disclosure includes: a device body including a bobbin and a coil unit of a wire wound around the bobbin; a terminal block arranging a lead portion drawn out from a wire of the coil unit thereon; and a case capable of accommodating the device body. The case includes a support arm extending outside the case, and the terminal block is held by the support arm.
A microfluidic device and a method for flow control of cells or particles in a microfluidic channel are disclosed. The microfluidic device may include a substrate having an outlet channel. The microfluidic device may also include a microfluidic channel arranged on the substrate such that an outlet of the microfluidic channel is positioned above the outlet channel. The microfluidic device may further include a set of piezoelectric actuators arranged above the outlet channel and adjacent to the outlet, the set of piezoelectric actuators configured to eject a portion of a fluid out of the microfluidic channel via the outlet.
A magnetic sensor includes: a sensor chip having magnetic layers magnetically coupled to each other through a magnetic gap and a magnetic sensing element disposed on a magnetic path formed by the magnetic gap; an external magnetic member magnetically coupled to one of the magnetic layer 21; and a measuring current coil wound around the external magnetic member and through which a current for generating a magnetic field to be measured flows. The magnetic sensing element 31 and the magnetic layers are thus integrated in the sensor chip, so that the magnetic gap can be designed to be very small in width, and a leakage magnetic field can be applied in large amounts to the magnetic sensing element. Thus, even when the current I flowing in the measuring current coil is weak, a magnetic field generated by the current I can be detected with high sensitivity.
G01R 15/18 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
A composite particle of the present invention includes an inorganic particle and a graphene oxide particle that coats at least a part of the inorganic particle, and the graphene oxide particle is a modified graphene oxide particle having a surface modified with a hydrocarbon group optionally having a substituent.
A magnetic sensor includes an MR element. The MR element includes a free layer. The free layer has a first surface having a shape that is long in one direction and a second surface located opposite the first surface, and has a thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first edge and a second edge located at both lateral ends of the first surface. In a given cross section, the thickness at the first edge is smaller than the thickness at a predetermined point on the first surface between the first edge and the second edge.
A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.
A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a first layer and a second layer, and also includes first and second inclined surfaces formed across the first layer and the second layer. Each of the first and second MR elements includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization pinned layer and the free layer of the second MR element are disposed on the second inclined surface.
A magneto resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and a buffer layer. The nonmagnetic layer is between the first ferromagnetic layer and second ferromagnetic layer. The buffer layer is in contact with the first ferromagnetic layer. The first ferromagnetic layer contains a Heusler alloy containing Co. The buffer layer contains at least a first atom, a second atom, and a third atom other than Co as main components. The buffer layer does not contain Co or contains Co at a proportion less than a compositional proportion of the first atom, the second atom, and the third atom. In a case where an atomic radius of any one atom of the first atom, the second atom, and the third atom is taken as a reference, an atomic radius of another atom thereof is 95% or less or 105% or more of the reference.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
46.
MAGNETIC SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A magnetic sensor device includes a stacked structure including a sensor substrate and a sensor element circuitry. The sensor substrate has a surface and a perimeter. The sensor element circuitry is provided on the surface of the sensor substrate, has a perimeter, and includes one or more magnetic sensor elements. As viewed in a plane parallel to the surface, a portion or all of the perimeter of the sensor element circuitry is located at a position different from a position of the perimeter of the sensor substrate.
A high-voltage feedthrough capacitor includes: a capacitor including an element body in which a through hole extending is formed, and a first electrode and a second electrode disposed facing each other on the element body; a feedthrough conductor inserted through the through hole and electrically connected to the first electrode; a grounding fitting electrically connected to the second electrode; and a first case and a second case. The element body includes: a first end face and a second end face; a first protruding part in which the through hole opens, the first protruding part being provided on the first end face; and a second protruding part in which the through hole opens, the second protruding part being provided on the second end face. The first case is attached to the first protruding part. The second case is attached to the second protruding part.
A coil component includes a coil configured of a winding, an exterior body provided to cover the coil, and a terminal part configured to be continuous with the winding. A proximal end portion of the terminal part is buried in the exterior body. A distal end portion ahead of the proximal end portion is bent from the proximal end portion and located outside a mounting surface of the exterior body along the mounting surface.
H01F 41/076 - Forming taps or terminals while winding, e.g. by wrapping or soldering the wire onto pins, or by directly forming terminals from the wire
An electronic component includes a component body, a metal terminal, and a bonding material. The component body includes an element body and an external electrode. The metal terminal includes a first main surface and a second main surface, and a side surface. The bonding material electrically and physically connects the external electrode and the metal terminal. The metal terminal includes a first metal layer including the first main surface, a second metal layer including the second main surface, and a terminal body including the side surface. The terminal body is exposed at the side surface, and the first metal layer and the second metal layer are separated from each other on the side surface. Each of the first metal layer and the second metal layer includes a Ni plated layer. The terminal body includes Cu. The bonding material includes solder.
Disclosed herein is a coil component that includes a coil part embedded in a magnetic element body. The coil part has a structure in which plural interlayer insulating films and plural conductor layers having a coil pattern are alternately stacked. At least one of the conductor layers has a clearance area having no coil pattern and extending radially outward from a center axis of the coil part. The magnetic element body includes a first magnetic resin layer provided in an inner diameter area of the coil part, a second magnetic resin layer provided in a radially outside area of the coil part, and a fifth magnetic resin layer filled in the clearance area and contacting the first and second magnetic resin layers.
A multilayer coil component includes an element body, a plurality of coil conductors, a first resistive layer, and a second resistive layer. The plurality of coil conductors are disposed in the element body and electrically connected to each other. The plurality of coil conductors include a first coil conductor and a second coil conductor adjacent to each other. The first resistive layer and the second resistive layer oppose each other between the first coil conductor and the second coil conductor. The first resistive layer is in contact with the first coil conductor.
Disclosed herein is an antenna device that includes a first coil wound in a plurality of turns, and a second coil disposed outside the first coil as viewed in a coil axis direction of the first coil. The first coil is configured such that a first interval between turns in a first direction is larger than a second interval between turns in a second direction perpendicular to the first direction. An inter-coil distance between an outer edge of the first coil and an inner edge of the second coil is larger than the second interval as viewed in the coil axis direction.
H02J 50/50 - Circuit arrangements or systems for wireless supply or distribution of electric power using additional energy repeaters between transmitting devices and receiving devices
H01Q 7/00 - Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
H02J 50/12 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
A coil device includes: a bobbin having a winding core portion with a hollow cylindrical shape; a core at least partially disposed inside the winding core portion; a wire having a coil portion wound around the winding core portion and a lead portion having a wire connection portion led out from the coil portion to extend substantially parallel to a winding axis O of the coil portion; and a terminal portion having a connection portion connected to the wire at the wire connection portion. A connection portion inner end, which is a position closest to the winding axis in an X-axis direction perpendicular to the winding axis O, of contact portions of the wire connection portion in the connection portion is disposed closer to the winding axis O in the X-axis direction than a first outer end portion located at a position farthest from the winding axis O in the X-axis direction in the bobbin.
H01F 27/30 - Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
54.
SOFT MAGNETIC POWDER, MAGNETIC CORE, MAGNETIC COMPONENT, AND ELECTRONIC DEVICE
A soft magnetic powder including a first particle group including particles having a particle size of D50 or more and a second particle group including particles having a particle size of less than D50. An average value of circularities of the particles belonging to the first particle group is defined as a first average circularity C1, and an average value of circularities of the particles belonging to the second particle group is defined as a second average circularity C2, and C1
H01F 1/12 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
H01F 3/08 - Cores, yokes or armatures made from powder
55.
ENERGY HARVESTING MODULE AND METHOD OF MAKING AN ENERGY HARVESTING MODULE
Energy harvesting module and, more particularly, energy harvesting module configured to be coupled to a rotatable component of a vehicle's wheel, and methods of making an energy harvesting module are disclosed. In some embodiments, an energy harvesting system includes: a piezoelectric component configured to produce energy in response to mechanical strain imparted on the piezoelectric component, wherein the piezoelectric component is configured to deform while experiencing the mechanical strain, and the piezoelectric component comprises a piezoelectric material layer, one or more conductive bonding layers, a load backing layer, and one or more electrode layers, wherein the load backing layer comprises a fiber reinforced composite material.
H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output
H01L 41/297 - Individual layer electrodes of multilayered piezo-electric or electrostrictive parts
H02J 7/32 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from a charging set comprising a non-electric prime mover
H02J 50/00 - Circuit arrangements or systems for wireless supply or distribution of electric power
56.
MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY
A magnetic domain wall moving element includes a first ferromagnetic layer, non-magnetic layer, second ferromagnetic layer, first magnetization fixed part, second magnetization fixed part, first surface layer and second surface layer. The first and second ferromagnetic layer sandwich the non-magnetic layer, the second ferromagnetic layer has a region having a magnetic domain wall formed therein, the first magnetization fixed part contacts second ferromagnetic layer, the second magnetization fixed part contacts second ferromagnetic layer at a position different from that of the first magnetization fixed part, the first is thicker than the second magnetization fixed part, the first surface layer contacts the first magnetization fixed part's first surface, the second surface layer contacts the second magnetization fixed part's first surface, and a constituent atom of a portion of the first surface layer in contact with the first magnetization fixed part are different from a constituent atom of the second surface layer.
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
A magnetoresistance effect element includes a laminated body having a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, a first wiring connected to the laminated body, a sidewall insulating layer configured to cover at least a part of a side surface of the laminated body, a first electrode connected to a side of the laminated body opposite to the first wiring, and a second electrode and a third electrode provided on both sides of the laminated body with the sidewall insulating layer sandwiched therebetween, sandwiching the laminated body, and connected to the first wiring.
A power conversion apparatus includes: a first power terminal; a first arm including a first switching device between a first coupling terminal and a first node, a second switching device between the first node and a second node, and a third switching device between the second node and a second coupling terminal; a second arm including a fourth switching device between the first coupling terminal and a third node, a fifth switching device between the third node and a fourth node, and a sixth switching device between the fourth node and the second coupling terminal; a first inductor between the second node and a fifth node; a second inductor between the fourth and fifth nodes: a first capacitor between the fifth node and the second coupling terminal; a first transformer including a first winding and a second winding; a rectifying circuit; a second power terminal; and a control circuit.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/00 - Conversion of dc power input into dc power output
A detection device includes a base plate, a piezoelectric element disposed on the base plate with an insulating member therebetween and generating a pressing force corresponding to an electromotive force, an electrostatic capacitance sensor detecting an electrostatic capacitance of the base plate, a wiring member (first wiring member) electrically connected to the piezoelectric element, and a wiring member (second wiring member) electrically connected to the electrostatic capacitance sensor.
G01L 1/16 - Measuring force or stress, in general using properties of piezoelectric devices
G01L 1/14 - Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
A high voltage feed-through capacitor includes an element body, a first electrode, a second electrode and a through-conductor. The element body includes a first main surface and a second main surface facing away from each other. A through-hole is formed in the element body and opens in the first main surface and the second main surface. The first electrode is disposed on the first main surface. The second electrode is disposed on the second main surface. The through-conductor is inserted through the through-hole and electrically connected to the first electrode. An opening area of the through-hole in the second main surface is larger than an opening area of the through-hole in the first main surface.
The metal magnetic powder includes Co as a main component, and an average particle size (D50) of 1 nm to 100 nm. An X-ray diffraction chart of the metal magnetic powder has a first peak that appears in a range of a diffraction angle 2θ of 41.6±0.3°, and a second peak that appears in a range of a diffraction angle 20θ of 47.4±0.3°. When a full width at half maximum of the first peak is set as FW1, and a full width at half maximum of the second peak is set as FW2, a ratio (FW2/FW1) of FW2 to FW1 is 1 to 5.
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
B22F 9/04 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/30 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
A soft magnetic alloy powder comprises first particles to fifth particles, each having a particle size within a specific range. Among the first particles to the fifth particles, nth particles have an average particle size xn (μm), an average circularity yn, and a variance zn of circularity, where nth is any ordinal number from first to fifth. Points (xn, yn) (n=1 to 5) plotted in an xy plane define an approximate straight line having a slope “my” of −0.0030 or more. Points (xn, zn) (n=1 to 5) plotted in an xz plane define an approximate straight line having a slope “mz” of 0.00050 or less.
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/142 - Thermal or thermo-mechanical treatment
B22F 3/24 - After-treatment of workpieces or articles
B22F 5/10 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of articles with cavities or holes, not otherwise provided for in the preceding subgroups
B22F 9/00 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor
B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
A soft magnetic alloy powder comprises a component having a compositional formula ((Fe(1−(α+β))CoαNiβ)(1−γ)X1γ)(1−(a+b+c+d+e))BaPbSicCdCre in atomic ratio. X1 comprises at least one selected from specific elements. Values of a, b, c, d, e, α, β, and γ of the compositional formula satisfy specific ranges. The soft magnetic alloy powder comprises soft magnetic alloy particles including soft magnetic alloy particles having a particle size of (0.95×D90) or more and (1.05×D90) or less. An average Wadell's circularity of the soft magnetic alloy particles having the particle size of (0.95×D90) or more and (1.05×D90) or less is 0.75 or more. A variance of Wadell's circularity of the soft magnetic alloy particles having the particle size of (0.95×D90) or more and (1.05×D90) or less is 0.035 or less.
A sensor chip of a magnetic sensor includes a magnetosensitive element, ferromagnetic films forming a magnetic gap overlapping the magnetosensitive element, and a passivation film provided on the ferromagnetic films so as to be filled in the magnetic gap. The ferromagnetic films each include a lower magnetic film and an upper magnetic film. The magnetic gap is configured such that a width between the upper magnetic films is larger than a width between the lower magnetic films. The material of the lower magnetic film is higher in permeability than the material of the upper magnetic film. With the above configuration, magnetic flux is efficiently applied to the magnetosensitive element, making it possible to achieve high detection sensitivity.
To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width W1 of an outer peripheral trench formed in the drift layer is larger than a width W2 of a center trench. An outer peripheral wall S1 of the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall S2 thereof is closer to vertical than the outer peripheral wall S1. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
66.
MULTILAYER BODY, NEGATIVE ELECTRODE COLLECTOR FOR LITHIUM ION SECONDARY BATTERIES, AND NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERIES
A laminated body contains a first metal layer containing copper and a second metal layer containing nickel and directly laminated on the first metal layer. A full width at half maximum of an X-ray diffraction peak having the maximum intensity among at least one X-ray diffraction peak derived from a nickel-containing crystal in the second metal layer is 0.3° or more and 1.2° or less.
A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
G11C 19/08 - Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
A high voltage capacitor includes a pair of capacitors; a common conductor, and a pair of individual conductors. Each of the pair of capacitors includes an element body having a columnar shape with a first direction as an axial direction, and including a first side surface and a second side surface facing away each other in a second direction orthogonal to the first direction, a first electrode disposed on the first side surface and electrically connected to a corresponding individual conductor of the pair of individual conductors; and a second electrode disposed on the second side surface and electrically connected to the common conductor. The pair of capacitors is disposed in such a way that the first electrodes face each other in the second direction. The common conductor surrounds the pair of capacitors and the pair of individual conductors when viewed from the first direction.
A transient voltage protection device includes an element body formed with a cavity inside, a pair of external electrodes on the element body, and a pair of internal electrodes in the element body. The pair of internal electrodes oppose each other. Each internal electrode is connected to a corresponding external electrode of the pair of external electrodes. The element body includes a first inner surface and a second inner surface. The first and second inner surfaces define the cavity and oppose each other. The pair of internal electrodes are exposed to the cavity and disposed on the first inner surface. In a cross section along a direction in which the first inner surface and the second inner surface oppose each other, the first inner surface includes a contour different from a contour included in the second inner surface.
A magnetic sensor includes a bridge circuit including a first arm and a second arm, a first substrate, and a second substrate. The first arm is provided on the first substrate. The second arm is provided on the second substrate. The first arm includes a first resistor and a second resistor connected in series. The second arm includes a third resistor and a fourth resistor connected in series. The second substrate is located at a position away from the first substrate so that a phase of a resistance of the second arm when a target magnetic field changes periodically is different from that of a resistance of the first arm when the target magnetic field change periodically.
G01D 5/244 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains
G01D 5/245 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains using a variable number of pulses in a train
There is provided a sensor member capable of suitably preventing a problem such as the intrusion of moisture or the like through an interface between an electrode and a protective film. A sensor member includes: a protected portion provided on one surface of a metal base and including a detection portion; a protective film including a first protective film portion having a first thickness and a second protective film portion having a second thickness thicker than the first thickness and formed at an opening peripheral edge of an opening leading to the protected portion, and covering at least a part of the protected portion from above; and an electrode portion including a first electrode portion disposed in the opening and connected to the protected portion, and a second electrode portion connected to the first electrode portion at an outer peripheral edge of the first electrode portion and formed on the second protective film portion.
G01L 19/06 - Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
G01L 9/04 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers of resistance strain gauges
G01L 19/00 - MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE - Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
There is provided a sensor member with a small risk of damage. A sensor member includes: a membrane; a protective film covering a part of the membrane; and an electrode portion connected to the membrane. The electrode portion 5 covers at least a part of the protective film.
G01L 1/22 - Measuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
A piezoelectric element includes a piezoelectric body and first, second, third, and fourth electrode layers disposed in the piezoelectric body. Each of the first, second, third, and fourth electrode layers includes a pair of first electrodes and a pair of second electrodes. The first and second electrodes included in the first electrode layer oppose the second and first electrodes included in the second electrode layer, respectively, with a part of the piezoelectric body. The first and second electrodes included in the second electrode layer oppose the first and second electrodes included in the third electrode layer, respectively, with a part of the piezoelectric body. The first and second electrodes included in the third electrode layer oppose the second and first electrodes included in the fourth electrode layer, respectively, with a part of the piezoelectric body.
A metal magnetic powder includes: metal nanoparticles having an average particle size (D50) is 1 nm to 100 nm, and a main phase of hcp-Co; and an additive elements α including at least one of Fe, Ni, and Cu.
A transient voltage protection device includes an element body formed with a cavity inside, a pair of internal electrodes, and a discharge assistance portion. The pair of internal electrodes are disposed in the element body and include edges. The edges include parts opposing each other in a first direction in the cavity. The discharge assistance portion is in contact with the parts of the edges. Each of the edges includes a first end exposed on an outer surface of the element body and a second end located opposite the first end and including a corner. The discharge assistance portion includes a pair of edges opposing each other in a second direction intersecting with the first direction and exposed to the cavity. The part included in each of the edges does not include the corner.
H01C 1/148 - Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors the terminals embracing or surrounding the resistive element
In a multilayer filter, first and second resonant circuits are arranged in a direction crossing a stacking direction of a plurality of dielectric layers. An input/output portion includes an input/output port group including an unbalanced port and a pair of balanced ports or an input/output port group including two pairs of balanced ports. The second resonant circuit includes an inductor conductor, a first capacitor conductor, and a second capacitor conductor. The inductor conductor includes first and second ends. The first capacitor conductor is connected to the first end. The second capacitor conductor is connected to the second end. The second dielectric layer has a dielectric constant lower than that of the first dielectric layer. The first and second capacitor conductors are provided in the first dielectric layer. At least a part of the inductor conductor is provided in the second dielectric layer.
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ (1)
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ (1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5≤α<1.9).
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Disclosed herein is a coil component that includes, first and second magnetic element bodies, first and second coil conductors embedded respectively in the first and second magnetic element bodies, first and second terminal electrodes exposed from the first magnetic element body and connected respectively to one end and other end of the first coil conductor, third and fourth terminal electrodes exposed from the second magnetic element body and connected respectively to one end and other end of the second coil conductor, and a low-permeability layer provided between the first and second magnetic element bodies and being lower in permeability than the first and second magnetic element bodies.
Disclosed herein is a coil component that includes a coil conductor embedded in the element body; a first bump conductor exposed to the mounting surface and the first and side surfaces; a second bump conductor exposed to the mounting surface and the second and fourth side surfaces; a first dummy bump conductor exposed to the mounting surface and the first and fourth side surfaces; a second dummy bump conductor exposed to the mounting surface and the second and third side surfaces; a first conductive resin layer connecting the first bump conductor and first dummy bump conductor; and a second conductive resin layer connecting the second bump conductor and the second dummy bump conductor. The first and bump conductors and the first and second dummy bump conductors are not covered at least partly with the first conductive resin layer.
Disclosed herein is a switching power supply circuit that includes a switching circuit having an input node connected to an input power supply terminal and an output node connected to an output power supply terminal through an output switch, a feedback circuit configured to feed back information based on a voltage appearing at the output node to the switching circuit, and an activation circuit configured to turn ON the output switch after an elapse of a predetermined time after a voltage appearing at the output node exceeds a predetermined value. The switching circuit is configured to adjust a level of a voltage appearing at the output node based on the information to a predetermined level. The feedback circuit includes an adjustment mechanism configured to adjust a relation between a voltage appearing at the output node and the information.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/157 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
This power supply device includes a battery unit which includes: a first battery pack; a step-up/down circuit for boosting the voltage of an external power supply up to the charge voltage of the battery pack; a first charge circuit; a first discharge circuit for detecting a voltage drop of the external power supply and performing discharge from the battery pack to a load device; and a control circuit for controlling charging and discharging. The discharge circuit has a first discharge switch and a second discharge switch which are connected in series between the battery pack and a power supply line. The first discharge switch is switched on/off by receiving a switching signal from the control circuit, and the second discharge switch is directly switched on/off not via the control circuit on the basis of the voltage of the external power supply.
An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.
An R-T-B-based permanent magnet including: R (rare earth element); T (Fe and Co); B (boron); and one or more selected from Al, Cu, Ga, and Zr. R includes Ce. The total R content is 31.3-34.0 mass % (inclusive), the Co content is 1.85-3.00 mass % (inclusive), the B content is 0.80-0.90 mass % (inclusive), the Al content is 0.03-0.90 mass % (inclusive), the Cu content is 0-0.25 mass % (inclusive), the Ga content is 0-0.10 mass % (inclusive), the Zr content is 0-0.60 mass % (inclusive), and the Fe content is substantially the remainder. The Ce content relative to R is 15-25 mass % (inclusive).
H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
H01F 1/053 - Alloys characterised by their composition containing rare earth metals
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
85.
LAYERED RESIN FILM, COLLECTOR, AND SECONDARY BATTERY
A laminated resin film includes: a resin layer; and a Cu film having on one surface or both surfaces of the resin layer, in which in the Cu film, an orientation index of a plane is 0.15 or more according to a Lotgering method, a half-width of an X-ray diffraction peak obtained by X-ray diffraction measurement of the plane is 0.3° or less, and Expression (1) is satisfied.
A laminated resin film includes: a resin layer; and a Cu film having on one surface or both surfaces of the resin layer, in which in the Cu film, an orientation index of a plane is 0.15 or more according to a Lotgering method, a half-width of an X-ray diffraction peak obtained by X-ray diffraction measurement of the plane is 0.3° or less, and Expression (1) is satisfied.
y>3.75x−0.675 Expression (1)
A laminated resin film includes: a resin layer; and a Cu film having on one surface or both surfaces of the resin layer, in which in the Cu film, an orientation index of a plane is 0.15 or more according to a Lotgering method, a half-width of an X-ray diffraction peak obtained by X-ray diffraction measurement of the plane is 0.3° or less, and Expression (1) is satisfied.
y>3.75x−0.675 Expression (1)
(in Expression (1), Y is the orientation index of the plane in the Cu film according to the Lotgering method, and x is the half-width of the X-ray diffraction peak obtained by the X-ray diffraction measurement of the plane in the Cu film.)
Provided is a magnetic core in which metal magnetic particles occupy an area of 75% to 90% on a cross-section. The metal magnetic particles include first large particles having a crystalline metal material and having a Heywood diameter of 3 μm or more on the cross-section of the magnetic core, and second large particles having a nanocrystal structure or an amorphous structure and having a Heywood diameter of 3 μm or more, and an insulation coating of the first large particles is thicker than an insulation coating of the second large particles.
A magnetic sensor of the present invention has an elongate element portion having a magnetoresistive effect and a pair of elongate soft magnetic bodies that are arranged along the element portion on both sides of the element portion with regard to a short axis thereof. Each soft magnetic body includes a central portion that is adjacent to the element portion from one end to another end of the element portion with regard to a long axis direction thereof and a pair of end portions that protrude from the central portion in the long axis direction. A width of at least one of the end portions gradually decreases in a direction away from the central portion in at least a part of the end portions in the long axis direction thereof.
A laminated body contains a first metal layer containing copper and a second metal layer containing nickel and laminated directly on the first metal layer. A first surface of the second metal layer is a surface in contact with the first metal layer. A second surface of the second metal layer is a reverse surface of the first surface. A thickness direction of the second metal layer is a direction approximately perpendicular to the first surface and oriented from the first surface toward the second surface. A unit of a content of nickel in the second metal layer is % by mass. The content of nickel in the second metal layer increases along the thickness direction.
A laminated body contains a first metal layer containing copper; and a second metal layer containing nickel and laminated directly on the first metal layer. A first surface of the second metal layer is a surface in contact with the first metal layer. A second surface of the second metal layer is a reverse face of the first surface. A thickness direction of the second metal layer is a direction approximately perpendicular to the first surface and oriented from the first surface toward the second surface. A unit of a content of nickel in the second metal layer is % by mass. The content of nickel in the second metal layer 2 decreases along the thickness direction D.
A multilayer electronic device includes an element body and a pair of external electrodes. The element body includes an interior region in which inner dielectric layers and internal electrode layers are alternately laminated and an exterior region located outside the interior region in its lamination direction. The pair of external electrodes exists on surfaces of the element body. Main-phase particles in the inner dielectric layers and outer dielectric layers of the exterior region include a main component having a perovskite crystal structure represented by a general formula of ABO3. r1
In a multilayer filter, first to fourth resonant circuits are connected to an input/output portion. The input/output portion includes an input/output port group including an unbalanced port and a pair of balanced ports or an input/output port group including two pairs of balanced ports. Each of the first to fourth resonant circuits includes an inductor conductor and first and second capacitor conductors. The inductor conductor includes first and second ends. The first capacitor conductor is connected to the first end. The second capacitor conductor is connected to the second end. The second and third resonant circuits are magnetically coupled to each other. The second and third resonant circuits are arranged between the first resonant circuit and the fourth resonant circuit in a first direction. Each of first and second electrodes of a jump capacitor conductor is connected to the inductor conductors of the first and fourth resonant circuits.
To reduce the chip size of a chip-type electronic component including a capacitor and an inductor. A chip-type electronic component includes a capacitor constituted by a lower electrode pattern, an upper electrode pattern, and an insulating layer, an insulating layer covering the capacitor, and an inductor pattern disposed on the insulating layer. The inductor pattern has a section overlapping the capacitor, whereby an auxiliary capacitor is added. The inductor pattern is thus made to partly overlap the capacitor, so that a larger inductance can be obtained with a small chip size. In addition, characteristics can also be improved by auxiliary capacitance.
H01L 27/01 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
An R-T-B permanent magnet that contains: main-phase grains composed of an R2T14B compound (where R is a rare earth element, T is a transition metal element, and B is boron); and grain boundaries. R includes Ce. The R-T-B permanent magnet has a Ce content of 15-35 mass % with respect to the total R content. The grain boundaries include an R-rich phase and an R-T phase. In a cross section of the R-T-B permanent magnet, the surface area ratio S(R-T) of the R-T phases with respect to the grain boundaries is 0.60-0.85.
H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
C22C 38/16 - Ferrous alloys, e.g. steel alloys containing copper
C22C 38/14 - Ferrous alloys, e.g. steel alloys containing titanium or zirconium
C22C 38/10 - Ferrous alloys, e.g. steel alloys containing cobalt
C22C 38/06 - Ferrous alloys, e.g. steel alloys containing aluminium
B22F 9/02 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes
B22F 9/04 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 3/24 - After-treatment of workpieces or articles
B22F 3/16 - Both compacting and sintering in successive or repeated steps
A multilayer coil component includes an element body, a coil disposed in the element body, and an external electrode disposed in the element body and electrically connected to the coil. The element body includes a principal surface that is a mounting surface, and an end surface positioned adjacent to the principal surface and extending in a direction crossing to the principal surface. The external electrode includes an underlying metal layer and a conductive resin layer. The underlying metal layer is formed on the principal surface and the end surface. The conductive resin layer is formed to cover the underlying metal layer. A thickness of the conductive resin layer at an end positioned above the principal surface of the underlying metal layer is equal to or greater than 50% of a maximum thickness of a portion positioned above the principal surface of the conductive resin layer.
Disclosed herein is a common mode filter that includes a winding core part and first and second wires wound in a same direction around the winding core part. The first and second wires constitute a first winding block on one endmost side in an axial direction of the winding core part, a second winding block on other endmost side in the axial direction of the winding core part, and a third winding block positioned between the first and second winding blocks. The second winding block is a winding block at an odd-numbered position counted from the first winding block. The first and second wires cross each other in an area between the first and third winding blocks and in an area between the second and third winding blocks.
H03H 1/00 - Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
H01F 27/06 - Mounting, supporting, or suspending transformers, reactors, or choke coils
H01F 17/04 - Fixed inductances of the signal type with magnetic core
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
96.
ELEMENT ARRAY CIRCUIT, ELECTROMAGNETIC WAVE SENSOR, TEMPERATURE SENSOR, AND STRAIN SENSOR
An element array circuit includes one or more first wiring lines, second wiring lines, impedance elements, one or more operational amplifiers, one or more conversion elements, and one or more switchers. The second wiring lines each extend in a direction different from a direction of extension of the first wiring lines. The impedance elements are each coupled to one each of the first and second wiring lines. The operational amplifiers each include a positive input terminal, a negative input terminal couplable to one of the second wiring lines, and an output terminal. The conversion elements are each coupled to the negative input terminal and the output terminal, and each convert a current flowing through the second wiring line coupled to the negative input terminal into a voltage. The switchers are each coupled to one of the conversion elements and come into a conducting state or a nonconducting state.
G01L 1/22 - Measuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
G01N 22/00 - Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
Provided is a magnetic core in which metal magnetic particles occupy an area of 75% to 90% on a cross-section. The metal magnetic particles include first large particles having a nanocrystal structure and having a Heywood diameter of 3 μm or more on the cross-section of the magnetic core, and second large particles having an amorphous structure and having a Heywood diameter of 3 μm or more, and an insulation coating of the first large particles is thicker than an insulation coating of the second large particles.
H01F 1/24 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated
Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.
Magnetic sensor 1 has magnetic field detection element 7 that detects a magnetic field that is generated by magnet 2 that rotates about central axis C; and substrate 10 that has first side P1 and second side P2 that is a reverse side of the first side P1, wherein second side P2 includes first slope PK1 that is inclined with respect to first side P1. Magnetic field detection element 7 is provided along first slope PK1. Magnet 2 is separated from central axis C and polarities of magnet 2 alternate in a circumferential direction about central axis C. First side P1 is substantially parallel to central axis C. First slope PK1 is inclined with respect to first side P1 by an average angle of 0. In a plane perpendicular to central axis C, intensity of the magnetic field where magnetic field detection element 7 is positioned changes as magnet 2 rotates, and the relation
Magnetic sensor 1 has magnetic field detection element 7 that detects a magnetic field that is generated by magnet 2 that rotates about central axis C; and substrate 10 that has first side P1 and second side P2 that is a reverse side of the first side P1, wherein second side P2 includes first slope PK1 that is inclined with respect to first side P1. Magnetic field detection element 7 is provided along first slope PK1. Magnet 2 is separated from central axis C and polarities of magnet 2 alternate in a circumferential direction about central axis C. First side P1 is substantially parallel to central axis C. First slope PK1 is inclined with respect to first side P1 by an average angle of 0. In a plane perpendicular to central axis C, intensity of the magnetic field where magnetic field detection element 7 is positioned changes as magnet 2 rotates, and the relation
(1/Ks)×0.8≤MFR≤(1/Ks)×1.2(Ks=sin θ)
is satisfied, where MFR is a ratio of a maximum value to a minimum value of the intensity of the magnetic field in the plane.
B60T 17/22 - Devices for monitoring or checking brake systems; Signal devices
G01D 5/14 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
Systems, methods, and devices for haptic feedback are provided. A microfluidic device includes an inlet port for supplying a fluid into the microfluidic device. A tube receives the fluid from the inlet port. The microfluidic device includes a piezoelectric actuator for realizing a displacement of a substrate to which the microfluidic device is attached, the displacement based on an electrical actuation applied to the piezoelectric actuator, and an amount of the fluid or a pressure in the tube. In some embodiments, the tube includes a carbon nanotube. In some embodiments, an amount of the fluid in the tube is controlled by an actuator (e.g., the piezoelectric actuator).
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