Abstract

A MEMS resonant sensor adapted to generate a pulse output signal from a signal of interest, the signal of interest being a signal having a frequency oscillating around a carrier frequency, the MEMS sensor comprising at least one processing channel for processing the signal of interest, each processing channel comprising: a demodulation unit for demodulating the signal of interest in order to form a demodulated signal, the demodulation unit comprising a frequency mixer between the signal of interest and a reference signal, the demodulated signal having a low-frequency component and a high-frequency component; a filtration unit for filtering the demodulated signal in order to form a filtered signal, the filtration unit being adapted to allow through the low-frequency component of the demodulated signal; a comparison unit for comparing the filtered signal with a fixed threshold signal in order to form a comparison signal, the comparison signal comprising rising edges and falling edges; a detection unit for detecting rising edges, each rising edge corresponding to a pulse of the output signal.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• G01P 15/125 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up

Abstract

A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.

IPC Classes  ?

• H01L 29/861 - Diodes
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

The present description relates to a device (20) for detecting a magnetic field (Bz) comprising a first tapered acoustic waveguide (40) having a first base (41) and a first tapered end (42), a first electrically conductive wire (50) rigidly coupled to the first tapered end (42), and an electroacoustic transducer (60) rigidly coupled to the first base (41).

IPC Classes  ?

• G01R 33/038 - Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices
• G01H 11/08 - Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
• G01R 33/028 - Electrodynamic magnetometers

Abstract

A solid-state microbattery, including a substrate; a lithium-cobalt-oxide layer forming a cathode having first and second opposite surfaces; a lithium-based solid-state electrolyte formed on the first surface of the cathode; the second surface of the cathode is oriented towards the substrate; an anode formed on the solid-state electrolyte; noteworthy in that the lithium-cobalt-oxide layer possesses a grain size that increases from the first surface to the second surface.

IPC Classes  ?

• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• H01M 10/0562 - Solid materials
• H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators

Abstract

The present disclosure relates to a neural network comprising a first synapse circuit (106) configured to apply a first time delay to a first input signal (READ1) using a first resistive memory element (108) and to generate a first output signal at an output of the first synapse circuit by applying a first weight to the delayed first input signal; and a second synapse circuit (106) configured to apply a second time delay, different to the first time delay, to the first input signal, or to a second input signal (READN), using a second resistive memory element (108) and to generate a second output signal at an output of the second synapse circuit by applying a second weight to the delayed second input signal.

IPC Classes  ?

• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

Abstract

The electronic circuit performs binary computation operations and comprises word, bit and source lines, and memory cells organized in rows and columns. The electronic circuit performs binary computation operations and comprises word, bit and source lines, and memory cells organized in rows and columns. Each cell includes one pair of memristors and one pair of switches, each memristor being connected to a switch and linked to the same source line during each computation operation, each pair of memristors storing a binary value; the switches being linked to a word line and to a pair of complementary bit lines. The electronic circuit performs binary computation operations and comprises word, bit and source lines, and memory cells organized in rows and columns. Each cell includes one pair of memristors and one pair of switches, each memristor being connected to a switch and linked to the same source line during each computation operation, each pair of memristors storing a binary value; the switches being linked to a word line and to a pair of complementary bit lines. The circuit comprises a reading module including: a logic unit for each column, each comprising an input terminal connected to a source line to receive a column value, the logic unit toggling between values, depending on a comparison of the column value with a toggle threshold value; a modification unit for modifying, for at least one logic unit and depending on the computation operation, a difference between the column and threshold values.

IPC Classes  ?

• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 11/54 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron

Abstract

A synthesis process of a liquid organic hydrogen carrier charged with hydrogen, Hn-LOHC, wherein a methanisation digestate is used as a hydrogen source, including at least the steps of: a) production of gaseous ammonia from the methanisation digestate; b) division of the gaseous ammonia produced in step a) into a first and a second flow; c) catalytic amination of a liquid organic hydrogen carrier not charged with hydrogen, H0-LOHC, by reaction with the gaseous ammonia from the first flow to convert the H0-LOHC into an aminated H0-LOHC and produce hydrogen; d) catalytic dissociation of gaseous ammonia from the second flow to produce hydrogen; and e) catalytic hydrogenation of the aminated H0-LOHC obtained in step c), by reacting with the hydrogen produced in steps c) and d), whereby the Hn-LOHC is obtained.

IPC Classes  ?

• C01B 3/00 - Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia

Abstract

A photovoltaic device comprising an assembly of several strings of photovoltaic cells, each of the strings being formed by a plurality of cells aligned in a first direction y, the strings being aligned in a second direction x forming a non-zero angle with the first direction and typically orthogonal or substantially orthogonal to the first direction, the assembly of cells including a first string laterally overlapped by a second chain of the plurality of strings, so that a peripheral portion of the second string covers a peripheral portion of the first string, the first string and the second string being electrically insulated via an insulating region interposed between the respective peripheral portions of the first string and of the second string.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Abstract

A data storage circuit includes a first memory array comprising a plurality of FeRAM memory units; a second memory array comprising a plurality of OxRAM memory units; each of the first and second memory arrays comprising: a plurality of word lines, a plurality of source lines and a plurality of bit lines; for each column each memory unit comprising: a memory cell having a first electrode and a second electrode connected to the source line associated to the memory unit; a selection transistor having a gate connected to the word line associated to the memory unit and placed in series with the memory cell between the source line and a bit line associated to of the memory unit; the data storage circuit comprising further: a data transfer stage configured to transfer data from a set of source FeRAM memory units having a common bit line to a target OxRAM unit by converting a read signal from the common bit line to a transfer voltage applied on a target line of the target OxRAM unit; the target line corresponding to the word line or the source line and having the same direction as the common bit line.

IPC Classes  ?

• G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Abstract

The present invention relates to a method for managing radio resources in a cellular network. For each node of interest (Nj) of the network, a set (Vj(t)) of neighbouring nodes is determined. Each neighbouring node (Ni∈Vj(t)) performs a local observation of its environment (oi(t,f)) and extracts thereform a plurality of radio characteristics, then encodes each of these radio characteristics in the form of a message (mi,jk(t,f)) which is transmitted to the node of interest. The node of interest then generates a local mapping (Φjk(t,f)) of each radio characteristic by aggregating the messages encoding this characteristic. Afterwards, the different local mappings are fused using fusion parameters so as to provide a hybrid local mapping (Φja(t,f)) of the radio characteristics. The node of interest decides at all times to perform an action (aj(t)) amongst a finite set (A) of possible actions, based on said hybrid local mapping and on a radio resource management strategy defined by a conditional probability parameterised distribution of each action (πj,θ(aj(t)|Φja(t,f)). The set of fusion parameters as well as the set (θ) of the parameters of the conditional probability distribution undergo a reinforcement learning so as to maximise a reward over time, dependent on an objective function of the network.

IPC Classes  ?

• H04W 72/50 - Allocation or scheduling criteria for wireless resources
• H04L 41/16 - Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks using machine learning or artificial intelligence

Abstract

A method for fabricating an optoelectronic component includes at least one photodiode, the steps of the method making it possible to move the electric carrier collection field to the layer least sensitive to radiation, thus reducing the influence of irradiation on the dark current.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The invention relates to a method for manufacturing a metal alloy part by additive manufacturing, said metal alloy comprising a metal element A and said part further comprising inclusions of a phosphor compound consisting of a metal oxide doped by said metal element A, said method comprising at least one step of forming a layer comprising said metal alloy comprising a metal element A and inclusions of said phosphor compound by an additive manufacturing technique selected from laser metal deposition and laser powder bed fusion, from a mixture comprising a metal alloy powder comprising the metal element A and a precursor powder of said phosphor compound, said precursor powder consisting of a powder of said metal oxide optionally doped with a metal element B different from said metal element A, said phosphor compound being formed in situ, during the implementation of the additive manufacturing technique, by atomic diffusion of a portion of the metal element A of the metal alloy to the metal oxide and exchange of said metal element A with a metal element of the metal oxide.

IPC Classes  ?

• B22F 10/25 - Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS]
• B22F 10/28 - Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
• B22F 10/38 - Process control to achieve specific product aspects, e.g. surface smoothness, density, porosity or hollow structures
• B23K 26/342 - Build-up welding
• B33Y 10/00 - Processes of additive manufacturing
• C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
• C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
• C22C 1/059 - Making alloys comprising less than 5% by weight of dispersed reinforcing phases
• C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
• C22C 33/02 - Making ferrous alloys by powder metallurgy
• B22F 3/10 - Sintering only
• B22F 10/36 - Process control of energy beam parameters
• B33Y 50/02 - Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes

Abstract

The invention relates to a nuclear fuel assembly (1), comprising: - a bundle of nuclear fuel pins (100), each pin comprising cladding accommodating an exclusively fissile column (14), the height of the column being less than or equal to 65 cm, the outer cladding diameter of the pins being greater than or equal to 9 mm, - an assembly body comprising a housing (10) in the form of a hexagonal tube that is closed and sealed to a heat transfer liquid intended to pass through the bundle, the central portion (12) of the housing enclosing the bundle, while the upper portion (11) that forms the assembly head houses an upper neutron shielding (UNS) device filled with neutron-absorbing material, the housing comprising an intermediate portion that defines a plenum volume, - a lower portion forming the base of the assembly, in the extension of the housing, the base being suitable for allowing the heat transfer liquid that flows through the assembly to pass through.

IPC Classes  ?

• G21C 1/02 - Fast fission reactors, i.e. reactors not using a moderator
• G21C 5/02 - Moderator or core structure; Selection of materials for use as moderator - Details
• G21C 3/04 - Constructional details
• G21C 3/32 - Bundles of parallel pin-, rod-, or tube-shaped fuel elements
• G21C 3/52 - Liquid metal compositions

Abstract

An optoelectronic device including a light-emitting diode covered with a photoluminescent conversion layer based on a perovskite material.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

IPC Classes  ?

• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A device for acquiring a 2D image and a depth image, including: a first sensor formed in and on a first semiconductor substrate and including regions of a material distinct from that of the substrate located in an interconnect stack in line with 2D image pixels of the first r sensor; and adjoining the first sensor, a second sensor formed in and on a second semiconductor substrate and including a plurality of depth pixels located opposite the regions of the first sensor, wherein each region includes a first portion having, in top view, a smaller surface area than that of a second portion, the material of the regions having an optical index greater than or equal to that of the material of the substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A SiP-type electronic device, including an electronic chip provided with an electrical interconnection face; a redistribution layer electrically coupled to the electrical interconnection face of the chip; electrical connection elements electrically coupled to the chip by the redistribution layer which is arranged between the chip and the connection elements; a first metal layer arranged on the side of a second face of the chip and secured to this second face; an encapsulation material arranged around the chip, between the redistribution layer and the first metal layer; a second metal layer including a first face secured by direct bonding to the first metal layer; a substrate arranged against a second face of the second metal layer.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/367 - Cooling facilitated by shape of device
• H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
• H01L 23/552 - Protection against radiation, e.g. light

Abstract

The present description concerns a random number generation circuit (2) of correlated sampling ring oscillator type comprising: two identical ring oscillators (RO1, R02) implemented in CMOS-on-FDSOI technology; a circuit (104) sampling and storing an output (O1) of one of the two oscillators (RO1) at a frequency of the other one of the two oscillators (R02) and delivering a corresponding binary signal (Beat); and a circuit (200) controlling back gates of PMOS and NMOS transistors of at least one delay element of at least one of the two oscillators (RO1, R02) based on a period difference between the two oscillators (RO1, R02).

IPC Classes  ?

• H03K 3/84 - Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators
• H03K 5/134 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active-delay devices with field-effect transistors

Abstract

A system for positioning and maintaining a position of a reference sensor around a magnetoencephalography helmet. The system includes an arch comprising at least one fixing branch for fixing the arch to an MEG helmet, a support plate on which the branch is fixed, a sensor support post fixed to the support plate of the arch; and a locking component for fixing the reference sensor to the post in at least one position defining the position with respect to an MEG helmet.

IPC Classes  ?

• A61B 5/245 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
• A61B 90/00 - Instruments, implements or accessories specially adapted for surgery or diagnosis and not covered by any of the groups , e.g. for luxation treatment or for protecting wound edges

Abstract

An OPM sensor fastening system includes a support socket for positioning the sensor, the support socket having a base and a housing for accommodating a portion of the OPM sensor, and a locking part for locking the sensor in the support socket, the locking part having an open base suitable for accommodating the base of the socket, a housing for accommodating a portion of the OPM sensor, and a removable partition suitable for letting the OPM sensor pass. The locking part is configured to press-fittingly cooperate with the support socket so as to blockingly wedge the OPM sensor in the longitudinal position relative to the socket.

IPC Classes  ?

• A61B 5/245 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level having vias includes providing the first level and a dielectric layer, randomly depositing particles on the dielectric layer, depositing an etching mask on the dielectric layer and the particles, and planarizing, so as to obtain a composite layer including the particles. The method also includes forming a lithographic layer having opening patterns, etching the composite layer through the opening patterns to form mask openings, then etching the dielectric layer through the mask openings, so as to obtain functional via openings and degraded via openings, and filling the via openings so as to form the vias of the interconnection level, said vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/311 - Etching the insulating layers

Abstract

A thermoset material obtained from a curing by heat treatment of a resin that can be obtained by polycondensation, in basic medium, of at least one phthalonitrile compound bearing on its benzene ring at least one hydroxyl group.

IPC Classes  ?

• C08G 73/08 - Polyhydrazides; Polytriazoles; Polyaminotriazoles; Polyoxadiazoles
• C08K 3/04 - Carbon
• C08K 7/06 - Elements

Abstract

The present description concerns an optical filter intended to be arranged in front of an image sensor comprising a plurality of pixels, the filter comprising, for each pixel, a resonant cavity comprising a first transparent layer, interposed between second and third mirror layers, and a diffraction grating formed in the first layer, wherein at least one of the cavities has a different thickness than another cavity.

IPC Classes  ?

• G02B 5/28 - Interference filters
• G01J 3/28 - Investigating the spectrum

Abstract

A method for manufacturing a thermoelectric structure including the following steps: a) providing a substrate made from a first material, b) depositing a thermoelectric element made from a second material on the substrate, by additive manufacturing, preferably by SLS or PBF, c) thinning and cutting the substrate until a film made from the first material is obtained, by means of which a thermoelectric structure comprising a film and the thermoelectric element is obtained.

IPC Classes  ?

• H10N 10/01 - Manufacture or treatment

Abstract

A method for manufacturing a thermoelectric structure including the following steps: a) providing a substrate, covered with a metal layer, b) forming a thermoelectric element on the metal layer, by additive manufacturing, preferably by SLS or PBF, and c) optionally removing the substrate, by means of which a thermoelectric structure, which comprises the metal layer and the thermoelectric element, is obtained.

IPC Classes  ?

• H10N 10/01 - Manufacture or treatment

Abstract

A tandem photovoltaic structure including, from the rear face to the front face: a first solar cell—with a silicon heterojunction: a first layer of a first conductivity type made of amorphous silicon and a substrate of doped crystalline silicon disposed between two layers of intrinsic amorphous silicon, a recombination zone comprising a layer of nanocrystalline or monocrystalline silicon of the second conductivity type, a second solar cell comprising an active layer made of a perovskite material and a second layer of a second conductivity type. The recombination zone further includes a layer of the first conductivity type in contact with the active layer of the second cell or a layer of nanocrystalline or monocrystalline silicon of the first conductivity type in contact with the active layer of the second solar cell.

IPC Classes  ?

• H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells

Abstract

A novel method for automatically analyzing reflectograms in order to classify impedance discontinuities detected via their temporal or spectral signatures into various categories relating to potential faults or other physical elements present on the cable. A method for detecting the mutual influence of neighboring pulses in a reflectogram in order to separate them so as to isolate them and characterize each pulse accurately.

IPC Classes  ?

• G01R 31/08 - Locating faults in cables, transmission lines, or networks
• G01R 31/11 - Locating faults in cables, transmission lines, or networks using pulse-reflection methods

Abstract

The present disclosure relates to a converter (1) converting a voltage (Vin) into time. The converter comprises a direct path (100) including a first injection-locked oscillator (104) and a first circuit (106). The first circuit is configured for receiving an output signal (Φsens) of the first oscillator and a reference signal (Φ0), and for providing at least a first pulse signal (out) determined by a phase shift between the output signal (Φsens) of the first oscillator and the reference signal (Φ0). The converter further comprises a feedback loop (102) comprising a second circuit (108) configured for integrating said at least one first pulse signal (out).

IPC Classes  ?

• G04F 10/10 - Apparatus for measuring unknown time intervals by electric means by measuring electric or magnetic quantities changing in proportion to time

Abstract

The invention relates to a method for achieving ultrasound imaging of an object having two opposite faces, using a pair of multi-element transducers comprising an emit transducer with L elements and a receive transducer with N elements, each placed on the same face or on two opposite faces of the object to be imaged. The invention allows real-time imaging of defects of any shape and orientation in solid structures to be facilitated. To this end, the algorithm described in patent application WO 2020/128344A1 is modified by adding a step of taking account of the distance between the two transducers when writing the spectrum of the image as a function of the spectrum of the received signals. The coordinates of the centre of the receiver, which are then different from that of the transmitter, are added. The expression for the cylindrical (or 3D spherical) wave must then take into account this difference between the positions of the multi-element transmit transducer and the multi-element receive transducer.

IPC Classes  ?

• G01N 29/04 - Analysing solids
• G01N 29/06 - Visualisation of the interior, e.g. acoustic microscopy
• G01N 29/26 - Arrangements for orientation or scanning
• G01N 29/46 - Processing the detected response signal by spectral analysis, e.g. Fourier analysis

Abstract

The invention relates to a method for bi-level optimisation of the location of sensors for detecting one or more defects in a structure using tomography, the method comprising a phase of initialising/generating a database comprising N reference images associated with N defects, and at least one iteration of the following steps: - for each defect: - obtaining (40) items of data via the sensor array that are positioned at a current location; - solving (42) and obtaining a solution to a low-level optimisation problem of reconstructing the relevant defect; - determining (44) a criterion associated with a high-level problem of optimising the quality of the reconstruction of the defects; - determining (46) the gradient of the criterion; - moving (52) each sensor proportional to the value of the gradient and obtaining its location for the next iteration.

IPC Classes  ?

• G01N 29/14 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
• G01N 29/44 - Processing the detected response signal

Abstract

The invention relates to the use of a lipophilic derivative of an aminopolycarboxylic acid as an extractant to extract at least one rare earth from an acidic aqueous solution. Applications: production of rare earths from concentrates derived from urban ores and, in particular, from concentrates from waste electrical and electronic equipment such as used or discarded NdFeB permanent magnets; production of rare earths from concentrates derived from natural ores or from concentrates derived from residues of natural ores.

IPC Classes  ?

• C22B 59/00 - Obtaining rare earth metals
• C22B 3/28 - Amines
• C22B 3/32 - Carboxylic acids
• C22B 3/26 - Treatment or purification of solutions, e.g. obtained by leaching by liquid-liquid extraction using organic compounds
• C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
• C07C 237/06 - Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atoms of the carboxamide groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being acyclic and saturated having the nitrogen atoms of the carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms

Abstract

A switch based on a phase change material including: a region in said phase change material that couples the first and second conductive electrodes of the switch; and a waveguide including a first end in line with a face of the region in said phase change material and a second end, opposed to the first end, designed to be illuminated by a laser source.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A micro-electromechanical device includes a frame; a proof mass connected to the frame through a first mechanical link which allows pivoting of the proof mass to relative to the frame about a first axis of rotation parallel to a mean plane of the frame; and a lever for detecting pivoting of the mass, connected to the proof mass through a second mechanical link allowing rotation of the lever relative to the proof mass about a second axis. The second link includes two walls connecting perpendicularly to each other, one to the lever and the other to the proof mass, one of the walls being parallel to the second axis of rotation.

IPC Classes  ?

• G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames

Abstract

An opto-mechanical structure includes a substrate extending along a plane; a support element arranged on the substrate; a conductive element adapted to create an electric field oriented perpendicularly to the plane of the substrate; and an opto-mechanical resonator. The opto-mechanical resonator includes a mechanically movable element made of a piezoelectric material and arranged on the support element, the piezoelectric material being chosen so that the electric field created by the conductive element when the same is subjected to an electric potential causes a displacement of the movable element; an optical resonator coupled to the movable element. The conductive element is located above or below the movable element, at a non-zero distance from the movable element, the conductive element and the movable element having a surface facing each other.

IPC Classes  ?

• G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Abstract

The invention relates to a method (30) for optimising the placement of a sensor array for detecting one or more anomalies in a structure, the method comprising a step of iteratively maximising area coverage in the wavenumber space corresponding to the Ewald circle, the method also comprising the steps of: - initialising (32) the sensor array; and, until convergence, at least one iteration of the following steps: - selecting (46), for each iteration, one of the sensors from the sensor array; - determining (48) a neighbouring region; - for each point in the neighbouring region, evaluating (50) predetermined distance metrics between the normalised frequency coverage of an ideal sensor distribution and that of the distribution of the sensor array to which the selected sensor located at said point belongs; - selecting (52) the metrics minimising point as the new position of the selected sensor.

IPC Classes  ?

• G01N 29/14 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
• G01N 29/44 - Processing the detected response signal

Goods & Services

Alliages de métaux des terres rares; métaux alcalino-terreux; métaux alcalins; métaux terreux; compositions destinées à la finition des métaux; compositions pour le placage des métaux; tous ces produits étant destinés à entrer dans la composition de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Métaux communs et leurs alliages; alliages de métaux non ferreux; tous ces produits étant destinés à entrer dans la composition de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Services de traitement des métaux pour la réalisation de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée; transformation des métaux pour la réalisation de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée; fabrication sur mesure ou sur commande de métaux à l’échelle nanométrique sous forme de matériaux en trois dimensions constitués de brins nanométriques interconnectés; fabrication sur mesure ou sur commande de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Evaluations techniques concernant la conception (travaux d’ingénieurs); recherches scientifiques; recherches techniques; recherche liée aux métaux; recherche et développement de produits; recherche et développement de métaux à l’échelle nanométrique; conception de produits; conception de métaux à l’échelle nanométrique; tous ces services étant fournis dans le domaine des buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée.

Abstract

A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
• C30B 33/02 - Heat treatment
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• H01L 21/311 - Etching the insulating layers
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

A data storage circuit includes an array of memory cells; a logic processing circuit configured to carry out a logic operation having N binary data as operands stored in N input memory cells, with N≥2, the second input/output nodes of the input memory cells being linked by a common bit line, the logic processing circuit comprising: a transimpedance amplifier stage configured to supply an analogue read signal from the voltage of the common bit line; a comparator intended to compare the analogue read signal with a first adjustable reference voltage in order to generate a digital output signal corresponding to the result of the logic operation; a control unit configured to adjust the reference voltage to an amplitude selected from among N distinct predetermined amplitudes, depending on the type of logic operation.

IPC Classes  ?

• G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

Abstract

A device for locating objects stored in a storage unit includes a plurality of storage spaces, each object being equipped with an RFID tag, the object-locating device comprising: a plurality of inhibitor circuits each intended to be placed in an associated storage space and configured to prevent the RFID tag of the object from being read by an RFID reader, a control unit configured to control activation of the inhibitor circuits in a predetermined activation sequence; a locating unit configured to control the RFID reader, and to receive, in each step of the activation sequence, a list of identifiers of the objects stored in the storage unit, the list being supplied by the RFID reader, and configured to identify the storage space of each object based on the lists of identifiers and on the activation sequence.

IPC Classes  ?

• G06K 7/10 - Methods or arrangements for sensing record carriers by corpuscular radiation
• G01S 5/02 - Position-fixing by co-ordinating two or more direction or position-line determinations; Position-fixing by co-ordinating two or more distance determinations using radio waves
• G06Q 10/087 - Inventory or stock management, e.g. order filling, procurement or balancing against orders

Abstract

A method for determining the operating state of a light-emitting implant implanted in the brain of a living being, the light-emitting implant including a light source responsible for emitting light into the brain of the living being, the method using a diagnosing device that includes a receiver of a light signal transmitted through a first eye of the living being and a device for determining the operating state of the light-emitting implant based on the received transmitted light signal.

IPC Classes  ?

• G01J 1/44 - Electric circuits
• A61N 5/06 - Radiation therapy using light

Abstract

A supercapacitor that includes: a first electrode; a second electrode; and a composite solid electrolyte disposed between the first electrode and the second electrode. The composite solid electrolyte includes a dielectric matrix and an ionic conductor disposed in channels/pores in the dielectric matrix. Methods of fabricating such supercapacitors are also disclosed.

IPC Classes  ?

• H01G 11/56 - Solid electrolytes, e.g. gels; Additives therein
• H01G 11/06 - Hybrid capacitors with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
• H01G 11/50 - Electrodes characterised by their material specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
• H01G 11/84 - Processes for the manufacture of hybrid or EDL capacitors, or components thereof

Abstract

It is essential to have efficient, simple, quick and transportable tools for reliably identifying bacteria that are multiresistant to antibiotics, more specifically extended spectrum β-lactamase (ESBL)-producing Enterobacteriaceae, which are the most widespread among Enterobacteriaceae. The present invention meets this requirement through its ease of use and its speed. The invention is based on detecting the enzyme activity of β-lactam hydrolysis using an antibody capable of discriminating between the intact form of the β-lactam ring of a β-lactam and its hydrolysis product. This antibody can be used in kits and methods enabling for rapidly detecting (in less than one hour), without using expensive equipment (a small strip visible to the naked eye), the presence of bacteria producing penicillin-type, plasmid-mediated or hyper-produced AmpC enzymes, of ESBL or carbapenemase from colonies or in a sample.

IPC Classes  ?

• C12Q 1/34 - Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving hydrolase
• C12Q 1/18 - Testing for antimicrobial activity of a material

Abstract

A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

IPC Classes  ?

• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 27/146 - Imager structures
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation

Abstract

An electronic chip including a substrate and, on the side of one face of the substrate, a metal pad intended to receive a soldering material, the pad including, in order from said face of the substrate, a first metal layer, an electrically conductive barrier layer, and a second metal layer, wherein an electrically insulating barrier layer is arranged on, and in contact with, the sidewall of the first metal layer over the entire periphery of the metal pad.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

Abstract

An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

IPC Classes  ?

• G01N 21/47 - Scattering, i.e. diffuse reflection

Abstract

A radio-frequency switch able to establish or break transmission of a radio-frequency signal, the switch including a first conductive finger, a second conductive finger, transmission of the radio-frequency signal taking place between the first conductive finger and the second conductive finger, at least one conductive electrode and a layer made of a PCM material having a lower surface and an upper surface. The first and second conductive fingers are spaced apart by a non-zero distance and in contact with the lower surface of the PCM layer. The conductive electrode is in contact with the upper surface of the PCM layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10N 79/00 - Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group

Abstract

A micro-electromechanical device of the inertial sensor type, includes a support, a movable frame, translationally guided along an axis of displacement parallel to the support, and including a proof mass which extends from a first end, connected to the support through a mechanical link, up to a second end, the mass being connected, on the side of the second end, to a member for detecting pivoting of the mass with respect to the frame. The link includes a thin, flexible wall which extends parallel to the support, from the frame to the first end of the proof mass, along a mean line which is parallel to the axis of displacement of the frame.

IPC Classes  ?

• G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure

Abstract

A device for regrowth of a thick structure lattice-matched with InP comprising: a Si substrate, an interface layer of SiO2 on the Si substrate, a bonding layer on the interface layer, said bonding layer being made of a III-V material consisting of an alloy of the AlGaInAs family, and a regrowth layer on the bonding layer, said regrowth layer being made of InP.

IPC Classes  ?

• H01S 5/02 - Structural details or components not essential to laser action

Abstract

The invention relates to a fixed-bed reactor/exchanger (1) for carrying out a thermochemical conversion reaction, comprising a heat exchange grid, the openings of which, which are delimited between adjacent bars, allow the reagents of the desired thermochemical conversion reaction to flow therein, wherein the bars are hollow and effectively constitute channels for the circulation of a heat transfer fluid, by means of which the heat of the reaction can be discharged (or supplied).

IPC Classes  ?

• B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
• F28D 7/16 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged in parallel spaced relation
• F28D 13/00 - Heat-exchange apparatus using a fluidised bed
• F28D 21/00 - Heat-exchange apparatus not covered by any of the groups

Abstract

The invention relates to a method for extracting discrete neutron components (derived from photonuclear reactions between photons and at least one chemical element to be detected) from a neutron spectrum derived from photonuclear reactions obtained by irradiating a material comprising the at least one chemical element to be detected with a source of photons, at least one energy of the photons of the source being greater than the photonuclear reaction threshold of the chemical element to be detected, which method uses a multilayer and multichannel neural network having an architecture with a convolution stage and a deconvolution stage. The method comprises a preliminary step of training the neural network by supervised learning and a prediction step using the trained neural network.

IPC Classes  ?

• G01N 23/221 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by activation analysis
• G01V 5/00 - Prospecting or detecting by the use of nuclear radiation, e.g. of natural or induced radioactivity

Abstract

The present invention relates to a negative electrode, in particular suitable for use in a lithium-ion battery, having a negative electrode layer formed on at least one surface of a current collector, wherein said negative electrode layer comprises at least one Si-C composite particulate material comprising silicon-based particles and one or more carbonaceous material; particles of at least one uncompressible graphite; and particles of at least one compressible graphite, the total uncompressible graphite content ranging from 2% to 60% by mass of the total mass of the negative electrode layer.

IPC Classes  ?

• H01M 4/134 - Electrodes based on metals, Si or alloys
• H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
• H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
• H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/02 - Electrodes composed of, or comprising, active material

Goods & Services

Logiciels d’intelligence artificielle; logiciels interactifs basés sur l’intelligence artificielle; équipements de traitement de données basé sur l’intelligence artificielle; systèmes de traitement de données basé sur l’intelligence artificielle; tous ces produits étant utilisés dans le domaine du développement de solutions d’intelligence artificielle, de la gestion des risques, de la responsabilité et de la conformité en matière réglementaire, industrielle, technologique, commerciale, financière, opérationnelle, environnementale, de santé et de sécurité. Conseil en intelligence artificielle; plates-formes pour intelligence artificielle en tant que logiciel-service [SaaS]; recherche et développement dans le domaine de l’intelligence artificielle; recherche en matière de traitement de données basé sur l’intelligence artificielle; conception et développement de programmes et de systèmes pour traitement de données basés sur l’intelligence artificielle; services d'ingénierie en matière de traitement de données et d’intelligence artificielle; services de génie logiciel pour le traitement des données et l’intelligence artificielle; tous ces services étant fournis dans le domaine du développement de solutions d’intelligence artificielle, de la gestion des risques, de la responsabilité et de la conformité en matière réglementaire, industrielle, technologique, commerciale, financière, opérationnelle, environnementale, de santé et de sécurité.

Goods & Services

Measuring instruments and apparatus; apparatus and instruments for control [inspection]; quality control and testing devices; data acquisition apparatus; data processing apparatus; diagnostic apparatus, not for medical use; apparatus for physical analysis not for medical purposes; electronic imaging devices; imaging apparatus; non-destructive control apparatus; non-destructive test apparatus; sensors, detectors and monitoring instruments; tomographic instruments other than for medical use; tomographic apparatus other than for medical use; software; artificial intelligence software; software for monitoring, analyzing, controlling and implementing operations in the physical world; none of these products being intended to facilitate the sharing and rental of vehicles. Non-medical imaging services; non-destructive control services; non-destructive test services; non-destructive trial services; design and development of testing and analysis methods; technical data analysis services.

Abstract

A data storage circuit includes a matrix of memory cells such that each memory cell comprises: a read circuit associated with at least one memory cell, comprising: a capacitive transimpedance amplifier stage configured to read a datum stored in a memory cell; the capacitive transimpedance amplifier stage comprising: an operational amplifier; a feedback capacitive impedance mounted between the output and the first input of the operational amplifier; a sequencer circuit configured to, following the reading of a datum corresponding to the second logic state, apply a control signal to the first input/output node having an amplitude lower than the first reference signal and maintain the selection transistor in an on state so as to replace, in the selected elementary storage component, a level of charges corresponding to the second logic state.

IPC Classes  ?

• G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Abstract

The present invention concerns a novel human erythroid progenitor cell line, wherein at least 90% of the cells are CD36+ CD44−CD71+; and wherein the cells:—do not express the gene encoding the receptor of Granulocyte-macrophage colony-stimulating factor (GM-CSF-R gene) or express GM-CSF-R gene at a lower level than the cells of human UT-7/Epo-S1 cell line; and—express the gene encoding the receptor of erythropoietin (Epo-R gene). The present invention also concerns the uses thereof for producing, detecting, or quantifying parvovims B19. The present invention allows the use of the cell lines for 1) a highly sensitive B19 infectious particles detection, and, 2) the efficient production of infectious B19 particles.

IPC Classes  ?

• C12N 5/078 - Cells from blood or from the immune system
• C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell lines; Tissues; Cultivation or maintenance thereof; Culture media therefor
• C12N 7/00 - Viruses, e.g. bacteriophages; Compositions thereof; Preparation or purification thereof
• G01N 33/50 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing

Abstract

An interconnector for solar cell strings intended to form a photovoltaic module, the interconnector comprising at least one cell interconnecting strip extending beyond a cell located at the end of the string through an end, and at least one string interconnecting strip, a section of one from among the cell interconnecting strip and the string interconnecting strip has a substantially constant surface, and a variable shape between a first zone of a first thickness and a second zone of a second thickness, the second thickness being strictly less than the first thickness and the second thickness being strictly less than 50 μm. Each second zone thus constitutes a resistance welding zone without loss in terms of conduction. Without extra thickness at the interconnections, the risk of the module breaking is limited.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
• H01L 31/048 - Encapsulation of modules
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The invention relates to a method (100) for determining a central wavelength of interest (λc) of a spectral line of interest, comprising the steps of: - A detecting, at a time t1, a first reference measured profile (Ps1ref), • B then detecting, at a time t0, a measured profile of interest (PSech) issued by said sample of interest, • C then detecting, at a time t2, a second reference measured profile (Ps2ref) issued by a reference source (Sref), • D processing said first and second reference measured profiles and processing the measured profile of interest, • E determining a reference position referred to as the intermediate reference position (P0ref) at the time t0 by interpolation, • F determining a value of the central wavelength of interest from a difference between said position of interest (Pech) and said intermediate reference position (P0ref), from said known value of the reference wavelength and from a linear dispersion (DL) of the spectrometer and of the associated detector.

IPC Classes  ?

• G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
• G01N 21/71 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
• G01J 3/32 - Investigating bands of a spectrum in sequence by a single detector
• G01J 3/28 - Investigating the spectrum
• G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
• G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
• G01J 3/443 - Emission spectrometry

Abstract

Disclosed is a system (10) for measuring a central wavelength of interest (λc) of a spectral line of interest (RSe) measured by a spectrometer, the system comprising: - a detecting system comprising a spectrometer (Spectro) associated with a detector (Det) - a Y-shaped optical fiber (FOY) configured such that: • the first input collects a light signal (SLech) issued by the sample, called the sample signal, • the second input collects a light signal (SLref) issued by a reference source (Sref), called the reference signal, • the output is coupled to an input of the spectrometer, the measuring system being configured so that the detector detects said sample signal and said reference signal simultaneously or sequentially over time, the measuring system further comprising a processing unit (UT) configured to: • process said measured profile of interest and said measured reference profile, • determine a value of the central wavelength of interest from a difference between said position of interest and reference position, from said known value of the reference wavelength and from a linear dispersion (DL) of the detection system.

IPC Classes  ?

• G01J 3/02 - Spectrometry; Spectrophotometry; Monochromators; Measuring colours - Details
• G01J 3/32 - Investigating bands of a spectrum in sequence by a single detector
• G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
• G01N 21/71 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
• G01J 3/28 - Investigating the spectrum
• G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
• G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
• G01J 3/443 - Emission spectrometry

Abstract

A tandem photovoltaic structure including, from the rear face to the front face: a first SHJ solar cell comprising a first layer of P-type doped amorphous silicon and a substrate of N-type doped crystalline silicon, a junction layer, a second perovskite-type solar cell comprising an active layer and a second P-type layer, the junction layer being made of N-type TCO and being in direct contact either with the second P-type layer or with the first P-type layer, one amongst the first or second solar cell also comprising an N-type layer, the junction layer serving as an N-type layer in the other one amongst the first or second solar cell.

IPC Classes  ?

• H10K 39/15 - Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells

Abstract

A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present invention relates to the development of new iron-based alloys, in particular of a steel having improved mechanical, thermal, and physico-chemical (corrosion) properties. More specifically there is disclosed a steel material having a new microstructure, characterized by a hierarchical triple structuring in which there appears a lattice of internal nanometric sub-cells capable of improving the properties and performance of steels.

IPC Classes  ?

• C22C 38/00 - Ferrous alloys, e.g. steel alloys
• C22C 38/02 - Ferrous alloys, e.g. steel alloys containing silicon
• C22C 38/04 - Ferrous alloys, e.g. steel alloys containing manganese
• C22C 38/40 - Ferrous alloys, e.g. steel alloys containing chromium with nickel
• C22C 33/02 - Making ferrous alloys by powder metallurgy
• C22C 38/44 - Ferrous alloys, e.g. steel alloys containing chromium with nickel with molybdenum or tungsten
• C22C 38/58 - Ferrous alloys, e.g. steel alloys containing chromium with nickel with more than 1.5% by weight of manganese
• B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
• B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
• B22F 10/28 - Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
• B22F 10/366 - Scanning parameters, e.g. hatch distance or scanning strategy
• B22F 10/64 - Treatment of workpieces or articles after build-up by thermal means
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 40/20 - Post-treatment, e.g. curing, coating or polishing
• B33Y 70/00 - Materials specially adapted for additive manufacturing

Abstract

One aspect of the invention relates to a method for bonding an interconnection element (INTR) to a photovoltaic cell comprising the steps of: - depositing an electrically conductive adhesive film (F1) on the interconnection element (INTR); and - depositing the interconnection element (INTR) on the photovoltaic cell (CELL1), the electrically conductive adhesive film (F1) being arranged in contact with the photovoltaic cell (CELL1).

IPC Classes  ?

• H01L 31/048 - Encapsulation of modules
• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

The present description concerns an electronic device comprising: —a silicon layer having a first surface and a second surface, —an insulating layer in contact with the first surface of the silicon layer, —at least one transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the gate portion being less heavily doped than the rest of the gate region.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

The present description concerns an electronic device comprising: a silicon layer, an insulating layer in contact with a first surface of the silicon layer, a transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the device further comprising, under the gate portion, a partial insulating trench in the silicon layer extending from a second surface of the silicon layer down to a depth smaller than the thickness of the silicon layer.

IPC Classes  ?

• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Abstract

A method for manufacturing an electrical conductor, such as a current rod, comprising the following successive steps: —providing a core made of a first metallic material, —providing a sheath made of a second metallic material, the sheath being intended to cover a first part of the core, —providing a connection terminal made of a third metallic material, —assembling the core and the connection terminal, by crimping, or by crimping and brazing, or by braze welding, or by brazing, —assembling the core and the connection terminal with the sheath.

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• B23K 20/02 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press
• B32B 1/08 - Tubular products
• B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

A device and a method for automatically deploying a communication network between a moving vehicle VM and a rear base BA, the moving vehicle moving from an initial position along a trajectory T. The deployment involves positioning a plurality of communication relay appliances along the trajectory of the VM to form, between the VM and the rear base, a two-way, linear wireless mesh communication network, such that the communications between the moving vehicle and the rear base maintain a communication link quality Q that is equal to or greater than a threshold value S. Each communication relay appliance is an autonomous mobile appliance, called Autonomous Robotic Communication Relay RCRA, capable of autonomously moving and of being positioned along the trajectory T followed by the VM in order to allow the quality of the communication link to be maintained.

IPC Classes  ?

• H04W 36/00 - Handoff or reselecting arrangements
• H04W 36/30 - Reselection being triggered by specific parameters by measured or perceived connection quality data
• H04W 36/32 - Reselection being triggered by specific parameters by location or mobility data, e.g. speed data

Abstract

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

An integration system and method for the manufacture of radio frequency transmission front-end modules with radio frequency integrated circuit(s) and self-biased magnetic component(s) integrated on a “Wafer Level Packaging”-type technology. This integration makes it possible to design efficient, compact and low-cost front-end modules.

IPC Classes  ?

• H04B 1/04 - Circuits
• H04B 1/036 - Cooling arrangements

Abstract

A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level, and an interconnection level comprising vias, includes providing the first level and a dielectric layer, forming an etching mask having openings on the dielectric layer, and randomly depositing particles in the openings, by deposition then recirculating the particles on the surface of the etching mask. The dielectric layer is etched through mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

A method for transferring an adhesive layer of thermoplastic polymer(s) from a first substrate to a second substrate including: depositing an antiadhesive layer on a first substrate, this layer being deposited on the periphery of the top face of said substrate, referred to as peripheral layer, thus providing on said top face a zone devoid of said layer, referred to as central zone; depositing an adhesive layer of thermoplastic polymer(s) on said central zone; depositing an antiadhesive layer on a second substrate, this layer being deposited on the top face of the second substrate excluding its periphery, said periphery being thus devoid of said antiadhesive layer; bonding the first substrate and the second substrate consisting of thermocompressing the top face of the first substrate onto the top face of the second substrate; removing the first substrate, whereby the second substrate remains, of which the top face is coated by the adhesive layer of thermoplastic polymer(s).

IPC Classes  ?

• C09J 7/20 - Adhesives in the form of films or foils characterised by their carriers

Abstract

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

The invention relates to a method for opening and discharging an electrochemical generator (10) comprising a negative electrode containing lithium or sodium and a positive electrode optionally containing lithium or sodium, the method comprising the following successive steps: - opening the electrochemical generator (10) in a cutting zone, with a cutting element (20), preferably having an electrical resistance greater than 100 mΩ, the electrochemical generator being opened while spraying the cutting zone with a first solution (100), - discharging the electrochemical generator by partially or completely submerging the electrochemical generator (10) in a second solution (200).

IPC Classes  ?

• B09B 3/35 - Shredding, crushing or cutting
• H01M 10/44 - Methods for charging or discharging
• H01M 10/54 - Reclaiming serviceable parts of waste accumulators
• H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
• H01M 10/052 - Li-accumulators
• H01M 10/054 - Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
• H01M 10/0569 - Liquid materials characterised by the solvents
• B09B 101/16 - Batteries

Goods & Services

Calculating devices; Data processing systems; Data processing equipment; Software. Information, advice and consultancy services relating to the recycling of waste and trash. Infrastructure as a Service [IaaS]; Platforms for artificial intelligence as software as a service [SaaS]; Providing technological information about environmentally-conscious and green innovations; Design and development of computer software for evaluation and calculation of data; Technical surveys; Engineering services; Design of glass and of glass products; Chemical research and analysis services; Chemical analysis services for use in design; Materials testing and evaluation; Design and testing of new products; Conducting of technical feasibility studies; Design feasibility studies; Research and development for others, in relation to the following fields: Glass ware; Conformance testing services; Testing services for the certification of quality or standards; Testing, analysis and evaluation of the goods and services of others for the purpose of certification.

Abstract

The present invention concerns a method and a system of fault tolerant preparation of quantum polar code states, comprising: -a set of single qubit Pauli measurement circuits (3) configured to prepare an initial quantum system 5 of N = 2n single-qubit states associated to an initial quantum base, -a set of two qubit Pauli measurement circuits (7) configured to recursively prepare a quantum polar code |q2n)s °f codelength N = 2n, wherein at each recursive level k, where k = 1 to n, a set of 2n/2k quantum polar code states ||<72fc) j(k) = 1 to 2n/2k of codelengths 2k, siW referenced by corresponding sets Sj^ of indices comprising first and second sets of frozen indices = [17, ■ ■■, i7(k)} and X7(k) = {(i + !);(/<),..., 27k k)} is prepared, each quantum polar code state |q2k) being prepared by the application of two qubit Pauli measurement P ® P circuits on two equivalent polar code states 2^ ) 01 aanndd belonging to the output of the antecedent recursive level k — 1 and referenced by two corresponding sets of iinnddiicceess

IPC Classes  ?

• G06N 10/20 - Models of quantum computing, e.g. quantum circuits or universal quantum computers
• G06N 10/70 - Quantum error correction, detection or prevention, e.g. surface codes or magic state distillation
• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control

Abstract

The invention relates to a method for manufacturing a transfer structure (100) comprising the following steps: i) providing an intermediate substrate (110); ii) bonding chips (121, 122) to a first surface of an intermediate substrate (110), whereby a tiling of chips (121, 122) is formed, the chips (121, 122) covering both the central region and the peripheral region of the intermediate substrate (110), the chips (122) positioned in the peripheral region projecting beyond the surface of the intermediate substrate (110), the method further comprising a step iii) of trimming, after step ii), during which the ends of the chips (122) projecting beyond the surface of the intermediate substrate (110) are removed, whereby the chips (122) in the peripheral portion are truncated, and a transfer structure (100) comprising an intermediate structure (110) covered by a donor pseudo-substrate formed of a tiling of chips (121, 122) is obtained, the tiling of the chips (121, 122) being offset with respect to the crystallographic plane of the intermediate substrate (110).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/762 - Dielectric regions
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

IPC Classes  ?

• H04N 25/65 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
• H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Abstract

An electronic component includes a substrate, an active stack formed above the substrate and including: a layer of p-type doped Gallium Nitride GaN, disposed above the substrate, and a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN; the component including two side zones located on either side of the layer of p-type doped GaN, the two side zones being oxygen-implanted.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
• H01L 29/66 - Types of semiconductor device

Abstract

Measuring device (1) intended to be disposed against a medium, the device extending between a contact face (10) intended to be applied facing the medium and a distal end (4), the device including a lateral wall (5) extending between the contact face and the distal end, the device including: at the level of the contact face (10), at least one admission opening (12) configured to collect a transcutaneous gas of interest emitted through the medium, the admission opening being through the contact face; a measuring chamber (20) including a gas sensor (23), the gas sensor being configured to measure a concentration of the gas of interest flowing through the measuring chamber; a collecting chamber (30) connected to the measuring chamber and delimited by an opening on the lateral wall, the collecting chamber including at least one lateral opening (34) through the lateral face or on the top wall of the collecting chamber so as to admit a vector gas into the collecting chamber; the device being characterized in that: the measuring chamber (20) is disposed between the contact face (10) and the collecting chamber (30); the device includes a pump (41) configured to drive a vector gas through the collecting chamber to an evacuation opening (42) so that driving the vector gas induces aspiration of the gas of interest from the contact face to the collecting chamber via the measuring chamber.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters

Abstract

A method for joining, by brazing, a first part and a second part, the steps of preparing at least one of the parts including the following: a) providing a part intended to be brazed, the part being made of carbon or based on titanium, nickel or a CoCr alloy, b) performing inert gas plasma treatment on the part whereby the part is cleaned and an active surface is formed on the part, c) depositing a first layer comprising an active element on the active surface of the part, the active element being a carbide-forming element, d) depositing a second layer of gold on the first layer, whereby the first layer is protected from oxidation and good wetting is ensured.

IPC Classes  ?

• B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
• B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C

Abstract

A method for stripping U(VI) and an An(IV) from an organic solution including tri-n-butyl phosphate in an organic diluent, the solution containing U(VI) and the An(IV) present as U(VI) nitrate and An(IV) nitrate at concentrations such that the U(VI) nitrate concentration is higher than the An(IV) nitrate concentration, and the sum of the U(VI) nitrate and An(IV) nitrate concentrations is ≥55 g/L. The method includes contacting the organic solution and an aqueous solution of nitric and oxalic acids, the oxalic acid concentration in the aqueous solution and the O/A volume ratio selected so that the oxalic acid is deficient with respect to the stoichiometric conditions of a complete precipitation of U(VI) and actinide(IV), to obtain a precipitate containing the actinide(IV) in oxalate form and a fraction of the U(VI) in oxalate form with a U(VI)/actinide(IV) mass ratio of between 0.5 and 5; and separating the precipitate from the organic and aqueous solutions.

IPC Classes  ?

• G21F 9/12 - Processing by ion-exchange

Abstract

A method for controlling access of a user equipped with a terminal to a physical or logical resource, the method involving a secure cryptographic device forming a token corresponding to an access criterion, the access token being intended to generate a keystream masking a biometric reference of the user obtained by a biometric reader of the terminal. The biometric reference thus masked is encrypted by fully homomorphic encryption and stored in a database hosted by a remote server. An access control operator obtains a biometric characteristic of the user, homomorphically encrypts it and transmits it to the remote server. This server compares the first and second biometric models in the homomorphic domain and supplies the homomorphically-encrypted result of the comparison to the access control operator. The latter grants or denies access to the user according to the result of the comparison, after having decrypted it.

IPC Classes  ?

• H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system

Abstract

(1+x)(2-2x)x7 7 (I) wherein x is selected from the range of from 0.1 to 0.2.

IPC Classes  ?

• C01G 33/00 - Compounds of niobium
• C01G 41/00 - Compounds of tungsten
• H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
• H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• H01M 10/052 - Li-accumulators
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries

Abstract

The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The present invention pertains to a continuous process for the manufacture of an electrode, to the electrode obtained therefrom and to an electrochemical device comprising said electrode.

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/139 - Processes of manufacture
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers

Abstract

A device and a method for the anonymous transmission of information, the transmission being a point-to-multipoint communication or a multipoint-to-multipoint communication between members of one and the same trusted network, a trusted network being predefined by a plurality of members and a plurality of independent proxies, the communication within a trusted network taking place on an anonymization network platform that masks the IP addresses of the members of the trusted network, the method being computer-implemented and comprising steps of: a member of a trusted network, comprising N′ members and N proxies, generating a plurality N of complementary data fragments, from an initial data packet, such that recombining the N complementary fragments makes it possible to reconstruct the initial data packet; the sending member transmitting, via the anonymization network platform, each generated complementary fragment to an independent proxy from among the N proxies, respectively; each independent proxy retransmitting, via the anonymization network platform, the complementary fragment received from the sending member to the plurality N′ of members of the trusted network; and each receiving member of the trusted network recombining the plurality N of received complementary fragments in order to reconstruct the initial data packet.

IPC Classes  ?

• H04L 9/40 - Network security protocols
• G06F 21/62 - Protecting access to data via a platform, e.g. using keys or access control rules

Abstract

The invention relates to a method for estimating the content of a gas-of-interest in a medium using a measurement device intended to be placed in contact with the medium, the device extending between a contact face intended to be applied against the medium and a distal end, the device comprising a side wall extending between the contact face and the distal end, and the device comprising: on the contact face, at least one intake opening configured to collect the gas-of-interest emitted by the medium, the intake opening extending through the contact face; a measurement chamber comprising a gas sensor, the gas sensor being configured to measure a concentration of the gas-of-interest flowing through the measurement chamber; a collection chamber (30) connected to the measurement chamber and delimited by the side wall, the collection chamber comprising at least one side opening (34) extending through the side face so as to admit ambient air into the collection chamber.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
• A61B 5/083 - Measuring rate of metabolism by using breath test, e.g. measuring rate of oxygen consumption
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
• A61B 5/1477 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using chemical or electrochemical methods, e.g. by polarographic means non-invasive
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

Abstract

A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), where OUT is the output signal of the sigma-delta modulator, IN is the input signal of the sigma-delta modulator, FTS is the transfer function of the input signal, Q is the quantization noise and FTB is the transfer function of the quantization noise, the second terms of the transfer function of the sigma-delta modulator only being distinct from one another for two channels Vi, Vj, in order to decorrelate the quantization noise of distinct channels, the first term of said transfer function for channel Vi being equal to the first term of said transfer function for channel Vj.

IPC Classes  ?

• H03M 3/00 - Conversion of analogue values to or from differential modulation
• H03M 1/08 - Continuously compensating for, or preventing, undesired influence of physical parameters of noise

Abstract

A method for manufacturing at least one photovoltaic cell includes the following steps: (a) providing at least one plate, the plate having a first face and a second face opposite the first face; (b) providing a support device; (c) positioning the plate placing the first face of the plate in contact with the support device; (d1) forming a first conductive material on the first face of the plate; (d2) forming a second conductive material on the second face of the plate. At least one of the first and second conductive materials is transparent, the support device includes at least one wire, and, during all or part of step (d1), the first face of the plate bears on the wire.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the Si3N4 waveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.

IPC Classes  ?

• G02B 6/132 - Integrated optical circuits characterised by the manufacturing method by deposition of thin films
• H01L 31/0232 - Optical elements or arrangements associated with the device
• H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A method for executing a machine code with a computer, including constructing a signature for a current instruction on the basis of signals generated by a stage of a hardware processing path, this stage being a decoder or a stage following the decoder in the hardware processing path, and on the basis of the preceding signature constructed for an instruction which precedes it, then checking the integrity of the executed machine code by comparing the signature constructed for the current instruction with a prestored reference signature, then only when the integrity of the current instruction has been checked successfully, decrypting a cryptogram of the following instruction using the signature constructed for the current instruction.

IPC Classes  ?

• G06F 9/30 - Arrangements for executing machine instructions, e.g. instruction decode
• H04L 9/08 - Key distribution
• H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system

Abstract

A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

IPC Classes  ?

• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 19/08 - Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10N 50/80 - Constructional details
• H10N 52/00 - Hall-effect devices

Abstract

A multichannel transmitter device includes, on each channel: a transmission processing channel designed to process an input signal and comprising a predistortion block applying a predistortion to the input signal on the basis of predistortion coefficients, a DAC, a first analogue filter, a power amplifier and a sigma-delta encoder between the predistortion block and the digital-to-analogue converter and designed to carry out notably a quantization of the predistortion block; a return channel associated with the transmission processing channel and comprising a block for estimating predistortion coefficients so as to estimate predistortion coefficients on the basis of the input signal and of a feedback signal; the transmitter device wherein the block for estimating predistortion coefficients is designed to estimate the predistortion coefficients on the basis of at least the input signal and of a signal resulting from the subtraction, from the feedback signal, of a signal representing the quantization noise resulting from the quantization carried out by the sigma-delta encoder.

IPC Classes  ?

• H04B 1/04 - Circuits

Abstract

An interconnection structure includes a substrate formed by a first electrically insulating and optically transparent material, the substrate including a first face and an opposite second face, the first face defining a plane of the substrate, and a plurality of transparent electrodes, wherein the transparent electrodes pass through the substrate from the first face to the second face of the substrate in parallel to each other, and are electrically insulated from each other by the first electrically insulating and optically transparent material.

IPC Classes  ?

• G01N 33/483 - Physical analysis of biological material
• G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated

Abstract

A system and method for controlling operating modes of a system, each operating mode being implemented by an execution of one or more software components. This control system includes software components called elementary components, each elementary component having at least one input able to receive input data and/or at least one output able to transmit output data; and at least one software meta-component including one or more internal wiring diagrams, each internal wiring diagram defining interconnections between inputs and outputs of elementary components and/or meta-components, a transition logic between states defining a current state of said system and a sequence between states at least some of the states corresponding to an implementation of an internal wiring diagram, a mechanism for controlling the internal configurations, and a programming interface providing services/functions implementing at least one internal wiring scheme.

IPC Classes  ?

• G05B 19/4155 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
• B25J 9/16 - Programme controls

Abstract

A method may form an electroconductive and hydrophobic microporous layer (MPL) at an active layer surface configured for an electrochemical converter, including: (a) providing a non-aqueous dispersion, called “ink”, including a carbon-based particulate material and an organic solvent; (b) forming an ink deposit at the active layer surface; and (c) evaporating the solvent(s) to form a microporous layer, simultaneously and/or subsequently to the forming (b). The ink may include poly(vinylidene fluoride-co-hexafluoropropene), dissolved in the organic solvent. Ink may prepare such a microporous layer, and a multilayer structure including an active layer supported by a solid electrolyte membrane and contacting, at its face on the opposite side the solid membrane, with a microporous layer obtained by the such a method. A membrane-electrode assembly may include such a multilayer structure. Such an MEA may be used in an individual cell of an electrochemical converter, in particular in a PEMFC.

IPC Classes  ?

• C09D 11/52 - Electrically conductive inks
• C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
• C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
• C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
• H01M 8/1004 - Fuel cells with solid electrolytes characterised by membrane-electrode assemblies [MEA]

Abstract

The invention is based on a method for producing an individualisation zone of a chip comprising a component level and a contact level comprising vias, the method comprising the following steps: providing the components level and a dielectric layer, forming a mask on the dielectric layer, etching the dielectric layer through mask openings so as to form openings opening onto the contact zones of the components level, forming fluorinated residue by inputting fluorinated species on at least some contact zones, the openings thus comprising openings with fluorinated residue and openings without residue, filling the openings so as to form the vias of the contact level, said vias comprising functional vias at the openings without residue and altered vias at the openings with residue.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/8234 - MIS technology
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns