Commissariat à l'énergie atomique et aux energies alternatives

France

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1.

SIMPLIFIED TANDEM STRUCTURE FOR SOLAR CELLS WITH TWO TERMINALS

      
Application Number 18257718
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-04-11
Owner
  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
  • 3SUN S.R.L. (Italy)
Inventor
  • Puaud, Apolline
  • Matheron, Muriel
  • Munoz, Maria-Delfina

Abstract

A tandem photovoltaic structure including, from the rear face to the front face: a first solar cell—with a silicon heterojunction: a first layer of a first conductivity type made of amorphous silicon and a substrate of doped crystalline silicon disposed between two layers of intrinsic amorphous silicon, a recombination zone comprising a layer of nanocrystalline or monocrystalline silicon of the second conductivity type, a second solar cell comprising an active layer made of a perovskite material and a second layer of a second conductivity type. The recombination zone further includes a layer of the first conductivity type in contact with the active layer of the second cell or a layer of nanocrystalline or monocrystalline silicon of the first conductivity type in contact with the active layer of the second solar cell.

IPC Classes  ?

  • H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells

2.

METHOD FOR EVALUATING A TRANSMISSION LINE THROUGH AUTOMATIC ANALYSIS OF A REFLECTOGRAM

      
Application Number 18376097
Status Pending
Filing Date 2023-10-03
First Publication Date 2024-04-11
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Ravot, Nicolas
  • Naline, Baudouin
  • Blanchart, Pierre
  • Gregis, Nicolas

Abstract

A novel method for automatically analyzing reflectograms in order to classify impedance discontinuities detected via their temporal or spectral signatures into various categories relating to potential faults or other physical elements present on the cable. A method for detecting the mutual influence of neighboring pulses in a reflectogram in order to separate them so as to isolate them and characterize each pulse accurately.

IPC Classes  ?

  • G01R 31/08 - Locating faults in cables, transmission lines, or networks
  • G01R 31/11 - Locating faults in cables, transmission lines, or networks using pulse-reflection methods

3.

ANALOG-TO-TIME CONVERTER

      
Application Number 18473220
Status Pending
Filing Date 2023-09-23
First Publication Date 2024-04-11
Owner Commissariat à l'Energie Atomique et aux Energies Alternatives (France)
Inventor
  • Mostafa, Ali
  • Badets, Franck
  • Hardy, Emmanuel

Abstract

The present disclosure relates to a converter (1) converting a voltage (Vin) into time. The converter comprises a direct path (100) including a first injection-locked oscillator (104) and a first circuit (106). The first circuit is configured for receiving an output signal (Φsens) of the first oscillator and a reference signal (Φ0), and for providing at least a first pulse signal (out) determined by a phase shift between the output signal (Φsens) of the first oscillator and the reference signal (Φ0). The converter further comprises a feedback loop (102) comprising a second circuit (108) configured for integrating said at least one first pulse signal (out).

IPC Classes  ?

  • G04F 10/10 - Apparatus for measuring unknown time intervals by electric means by measuring electric or magnetic quantities changing in proportion to time

4.

METHOD FOR ACHIEVING ULTRASOUND IMAGING THROUGH MULTI-DIMENSIONAL FOURIER TRANSFORM USING TWO SEPARATE MULTI-ELEMENT TRANSDUCERS

      
Application Number EP2023073878
Publication Number 2024/074252
Status In Force
Filing Date 2023-08-31
Publication Date 2024-04-11
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Ribay, Guillemette
  • Iakovleva, Ekaterina
  • Marmonier, Maxance
  • Robert, Sébastien

Abstract

The invention relates to a method for achieving ultrasound imaging of an object having two opposite faces, using a pair of multi-element transducers comprising an emit transducer with L elements and a receive transducer with N elements, each placed on the same face or on two opposite faces of the object to be imaged. The invention allows real-time imaging of defects of any shape and orientation in solid structures to be facilitated. To this end, the algorithm described in patent application WO 2020/128344A1 is modified by adding a step of taking account of the distance between the two transducers when writing the spectrum of the image as a function of the spectrum of the received signals. The coordinates of the centre of the receiver, which are then different from that of the transmitter, are added. The expression for the cylindrical (or 3D spherical) wave must then take into account this difference between the positions of the multi-element transmit transducer and the multi-element receive transducer.

IPC Classes  ?

  • G01N 29/04 - Analysing solids
  • G01N 29/06 - Visualisation of the interior, e.g. acoustic microscopy
  • G01N 29/26 - Arrangements for orientation or scanning
  • G01N 29/46 - Processing the detected response signal by spectral analysis, e.g. Fourier analysis

5.

USE OF LIPOPHILIC DERIVATIVES OF AMINOPOLYCARBOXYLIC ACIDS FOR THE EXTRACTION OF RARE EARTHS FROM AN ACIDIC AQUEOUS SOLUTION

      
Application Number FR2023051530
Publication Number 2024/074783
Status In Force
Filing Date 2023-10-04
Publication Date 2024-04-11
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
  • UNIVERSITE DE MONTPELLIER (France)
  • ECOLE NATIONALE SUPÉRIEURE DE CHIMIE DE MONTPELLIER (France)
Inventor
  • Pellet-Rostaing, Stéphane
  • Giusti, Fabrice
  • Arrachart, Guilhem
  • Piton, Raphaëlle
  • Baus-Lagarde, Béatrice

Abstract

The invention relates to the use of a lipophilic derivative of an aminopolycarboxylic acid as an extractant to extract at least one rare earth from an acidic aqueous solution. Applications: production of rare earths from concentrates derived from urban ores and, in particular, from concentrates from waste electrical and electronic equipment such as used or discarded NdFeB permanent magnets; production of rare earths from concentrates derived from natural ores or from concentrates derived from residues of natural ores.

IPC Classes  ?

  • C22B 59/00 - Obtaining rare earth metals
  • C22B 3/28 - Amines
  • C22B 3/32 - Carboxylic acids
  • C22B 3/26 - Treatment or purification of solutions, e.g. obtained by leaching by liquid-liquid extraction using organic compounds
  • C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
  • C07C 237/06 - Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atoms of the carboxamide groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being acyclic and saturated having the nitrogen atoms of the carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms

6.

METHOD FOR BI-LEVEL OPTIMISATION OF THE LOCATION OF SENSORS FOR DETECTING ONE OR MORE DEFECTS IN A STRUCTURE USING ELASTIC GUIDED WAVE TOMOGRAPHY

      
Application Number EP2023076770
Publication Number 2024/074379
Status In Force
Filing Date 2023-09-27
Publication Date 2024-04-11
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Waguet, Arthur
  • Mesnil, Olivier
  • Druet, Tom
  • Ciuciu, Philippe

Abstract

The invention relates to a method for bi-level optimisation of the location of sensors for detecting one or more defects in a structure using tomography, the method comprising a phase of initialising/generating a database comprising N reference images associated with N defects, and at least one iteration of the following steps: - for each defect: - obtaining (40) items of data via the sensor array that are positioned at a current location; - solving (42) and obtaining a solution to a low-level optimisation problem of reconstructing the relevant defect; - determining (44) a criterion associated with a high-level problem of optimising the quality of the reconstruction of the defects; - determining (46) the gradient of the criterion; - moving (52) each sensor proportional to the value of the gradient and obtaining its location for the next iteration.

IPC Classes  ?

  • G01N 29/14 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
  • G01N 29/44 - Processing the detected response signal

7.

OPTO-MECHANICAL STRUCTURE AND ASSOCIATED MANUFACTURING METHODS

      
Application Number 18481751
Status Pending
Filing Date 2023-10-05
First Publication Date 2024-04-11
Owner COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Furcatte, Thomas
  • Sansa Perna, Marc
  • Hentz, Sébastien
  • Kazar Mendes, Munique

Abstract

An opto-mechanical structure includes a substrate extending along a plane; a support element arranged on the substrate; a conductive element adapted to create an electric field oriented perpendicularly to the plane of the substrate; and an opto-mechanical resonator. The opto-mechanical resonator includes a mechanically movable element made of a piezoelectric material and arranged on the support element, the piezoelectric material being chosen so that the electric field created by the conductive element when the same is subjected to an electric potential causes a displacement of the movable element; an optical resonator coupled to the movable element. The conductive element is located above or below the movable element, at a non-zero distance from the movable element, the conductive element and the movable element having a surface facing each other.

IPC Classes  ?

  • G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
  • B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
  • H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

8.

MICRO-ELECTRO-MECHANICAL DEVICE

      
Application Number 18481509
Status Pending
Filing Date 2023-10-05
First Publication Date 2024-04-11
Owner COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Joet, Loïc
  • Rey, Patrice

Abstract

A micro-electromechanical device includes a frame; a proof mass connected to the frame through a first mechanical link which allows pivoting of the proof mass to relative to the frame about a first axis of rotation parallel to a mean plane of the frame; and a lever for detecting pivoting of the mass, connected to the proof mass through a second mechanical link allowing rotation of the lever relative to the proof mass about a second axis. The second link includes two walls connecting perpendicularly to each other, one to the lever and the other to the proof mass, one of the walls being parallel to the second axis of rotation.

IPC Classes  ?

  • G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames

9.

SWITCH BASED ON A PHASE CHANGE MATERIAL

      
Application Number 18478778
Status Pending
Filing Date 2023-09-29
First Publication Date 2024-04-11
Owner Commissariat à l'Énergie Atomique et aux Énergies Altermatives (France)
Inventor
  • Clemente, Antonio
  • Charbonnier, Benoît
  • Dupre, Cécilia
  • Reig, Bruno

Abstract

A switch based on a phase change material including: a region in said phase change material that couples the first and second conductive electrodes of the switch; and a waveguide including a first end in line with a face of the region in said phase change material and a second end, opposed to the first end, designed to be illuminated by a laser source.

IPC Classes  ?

  • H10N 70/20 - Multistable switching devices, e.g. memristors
  • G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
  • H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

10.

OPTIMISING THE PLACEMENT OF A SENSOR ARRAY FOR DETECTING ONE OR MORE ANOMALIES IN A GUIDED WAVE TOMOGRAPHY STRUCTURE

      
Application Number EP2023076910
Publication Number 2024/074398
Status In Force
Filing Date 2023-09-28
Publication Date 2024-04-11
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Druet, Tom
  • Waguet, Arthur
  • Mesnil, Olivier
  • Ciuciu, Philippe

Abstract

The invention relates to a method (30) for optimising the placement of a sensor array for detecting one or more anomalies in a structure, the method comprising a step of iteratively maximising area coverage in the wavenumber space corresponding to the Ewald circle, the method also comprising the steps of: - initialising (32) the sensor array; and, until convergence, at least one iteration of the following steps: - selecting (46), for each iteration, one of the sensors from the sensor array; - determining (48) a neighbouring region; - for each point in the neighbouring region, evaluating (50) predetermined distance metrics between the normalised frequency coverage of an ideal sensor distribution and that of the distribution of the sensor array to which the selected sensor located at said point belongs; - selecting (52) the metrics minimising point as the new position of the selected sensor.

IPC Classes  ?

  • G01N 29/14 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
  • G01N 29/44 - Processing the detected response signal

11.

HANETEC

      
Application Number 019010401
Status Pending
Filing Date 2024-04-08
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 06 - Common metals and ores; objects made of metal
  • 40 - Treatment of materials; recycling, air and water treatment,
  • 42 - Scientific, technological and industrial services, research and design

Goods & Services

Alliages de métaux des terres rares; métaux alcalino-terreux; métaux alcalins; métaux terreux; compositions destinées à la finition des métaux; compositions pour le placage des métaux; tous ces produits étant destinés à entrer dans la composition de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Métaux communs et leurs alliages; alliages de métaux non ferreux; tous ces produits étant destinés à entrer dans la composition de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Services de traitement des métaux pour la réalisation de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée; transformation des métaux pour la réalisation de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée; fabrication sur mesure ou sur commande de métaux à l’échelle nanométrique sous forme de matériaux en trois dimensions constitués de brins nanométriques interconnectés; fabrication sur mesure ou sur commande de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Evaluations techniques concernant la conception (travaux d’ingénieurs); recherches scientifiques; recherches techniques; recherche liée aux métaux; recherche et développement de produits; recherche et développement de métaux à l’échelle nanométrique; conception de produits; conception de métaux à l’échelle nanométrique; tous ces services étant fournis dans le domaine des buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée.

12.

Device for locating stored objects via RFID detection

      
Application Number 18375467
Status Pending
Filing Date 2023-09-30
First Publication Date 2024-04-04
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Descharles, Mélanie
  • Thomas, Thierry
  • Frassati, François

Abstract

A device for locating objects stored in a storage unit includes a plurality of storage spaces, each object being equipped with an RFID tag, the object-locating device comprising: a plurality of inhibitor circuits each intended to be placed in an associated storage space and configured to prevent the RFID tag of the object from being read by an RFID reader, a control unit configured to control activation of the inhibitor circuits in a predetermined activation sequence; a locating unit configured to control the RFID reader, and to receive, in each step of the activation sequence, a list of identifiers of the objects stored in the storage unit, the list being supplied by the RFID reader, and configured to identify the storage space of each object based on the lists of identifiers and on the activation sequence.

IPC Classes  ?

  • G06K 7/10 - Methods or arrangements for sensing record carriers by corpuscular radiation
  • G01S 5/02 - Position-fixing by co-ordinating two or more direction or position-line determinations; Position-fixing by co-ordinating two or more distance determinations using radio waves
  • G06Q 10/087 - Inventory or stock management, e.g. order filling, procurement or balancing against orders

13.

DATA LOGIC PROCESSING CIRCUIT INTEGRATED IN A DATA STORAGE CIRCUIT

      
Application Number 18373231
Status Pending
Filing Date 2023-09-26
First Publication Date 2024-04-04
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Billoint, Olivier
  • Grenouillet, Laurent

Abstract

A data storage circuit includes an array of memory cells; a logic processing circuit configured to carry out a logic operation having N binary data as operands stored in N input memory cells, with N≥2, the second input/output nodes of the input memory cells being linked by a common bit line, the logic processing circuit comprising: a transimpedance amplifier stage configured to supply an analogue read signal from the voltage of the common bit line; a comparator intended to compare the analogue read signal with a first adjustable reference voltage in order to generate a digital output signal corresponding to the result of the logic operation; a control unit configured to adjust the reference voltage to an amplitude selected from among N distinct predetermined amplitudes, depending on the type of logic operation.

IPC Classes  ?

  • G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
  • H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

14.

METHOD FOR PRODUCING AN INDIVIDUALIZATION ZONE OF AN INTEGRATED CIRCUIT

      
Application Number 18318044
Status Pending
Filing Date 2023-05-16
First Publication Date 2024-04-04
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Landis, Stefan
  • Exbrayat, Yorrick

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • H01L 21/311 - Etching the insulating layers
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

15.

PROCESS FOR MANUFACTURING A PHASE CHANGE MATERIAL

      
Application Number 18308147
Status Pending
Filing Date 2023-04-27
First Publication Date 2024-04-04
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Terebenec, Damien
  • Noe, Pierre-Olivier

Abstract

A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.

IPC Classes  ?

  • H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
  • C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
  • C30B 33/02 - Heat treatment
  • H10N 70/20 - Multistable switching devices, e.g. memristors

16.

METHOD FOR DETERMINING THE OPERATING STATE OF A LIGHT-EMITTING IMPLANT

      
Application Number 18476487
Status Pending
Filing Date 2023-09-28
First Publication Date 2024-04-04
Owner
  • Commissariat à l'Energie Atomique et aux Energies Alternatives (France)
  • CENTRE HOSPITALIER UNIVERSITAIRE GRENOBLE ALPES (France)
  • UNIVERSITE GRENOBLE ALPES (France)
Inventor
  • Bleuet, Pierre
  • Chabrol, Claude
  • Moro, Cécile
  • Chabardes, Stephan
  • Benabid, Alim Louis

Abstract

A method for determining the operating state of a light-emitting implant implanted in the brain of a living being, the light-emitting implant including a light source responsible for emitting light into the brain of the living being, the method using a diagnosing device that includes a receiver of a light signal transmitted through a first eye of the living being and a device for determining the operating state of the light-emitting implant based on the received transmitted light signal.

IPC Classes  ?

17.

SUPERCAPACITORS, AND METHODS OF THEIR MANUFACTURE

      
Application Number 18532419
Status Pending
Filing Date 2023-12-07
First Publication Date 2024-04-04
Owner
  • Murata Manufacturing Co., Ltd. (Japan)
  • Commissariat A L'Energie Atomique Et Aux Energies Alternatives (France)
Inventor
  • Oukassi, Sami
  • Sallaz, Valentin
  • Voiron, Frédéric

Abstract

A supercapacitor that includes: a first electrode; a second electrode; and a composite solid electrolyte disposed between the first electrode and the second electrode. The composite solid electrolyte includes a dielectric matrix and an ionic conductor disposed in channels/pores in the dielectric matrix. Methods of fabricating such supercapacitors are also disclosed.

IPC Classes  ?

  • H01G 11/56 - Solid electrolytes, e.g. gels; Additives therein
  • H01G 11/06 - Hybrid capacitors with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
  • H01G 11/50 - Electrodes characterised by their material specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
  • H01G 11/84 - Processes for the manufacture of hybrid or EDL capacitors, or components thereof

18.

DETECTING BETA-LACTAMASE ENZYME ACTIVITY

      
Application Number 18262523
Status Pending
Filing Date 2022-01-25
First Publication Date 2024-04-04
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • UNIVERSITE PARIS-SACLAY (France)
Inventor
  • Volland, Herve
  • Moguet, Christian
  • Naas, Thierry

Abstract

It is essential to have efficient, simple, quick and transportable tools for reliably identifying bacteria that are multiresistant to antibiotics, more specifically extended spectrum β-lactamase (ESBL)-producing Enterobacteriaceae, which are the most widespread among Enterobacteriaceae. The present invention meets this requirement through its ease of use and its speed. The invention is based on detecting the enzyme activity of β-lactam hydrolysis using an antibody capable of discriminating between the intact form of the β-lactam ring of a β-lactam and its hydrolysis product. This antibody can be used in kits and methods enabling for rapidly detecting (in less than one hour), without using expensive equipment (a small strip visible to the naked eye), the presence of bacteria producing penicillin-type, plasmid-mediated or hyper-produced AmpC enzymes, of ESBL or carbapenemase from colonies or in a sample.

IPC Classes  ?

  • C12Q 1/34 - Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving hydrolase
  • C12Q 1/18 - Testing for antimicrobial activity of a material

19.

ARCHITECTURE FOR InGaAs/GaAsSb SUPERLATTICES ON AN InP SUBSTRATE

      
Application Number 18265654
Status Pending
Filing Date 2021-11-26
First Publication Date 2024-04-04
Owner
  • LYNRED (France)
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Evirgen, Axel
  • Reverchon, Jean-Luc

Abstract

A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

IPC Classes  ?

  • H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
  • H01L 27/146 - Imager structures
  • H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
  • H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation

20.

RADIO FREQUENCY SWITCH

      
Application Number 18478338
Status Pending
Filing Date 2023-09-29
First Publication Date 2024-04-04
Owner COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Claret, Thierry
  • Reig, Bruno
  • Mercier, Denis

Abstract

A radio-frequency switch able to establish or break transmission of a radio-frequency signal, the switch including a first conductive finger, a second conductive finger, transmission of the radio-frequency signal taking place between the first conductive finger and the second conductive finger, at least one conductive electrode and a layer made of a PCM material having a lower surface and an upper surface. The first and second conductive fingers are spaced apart by a non-zero distance and in contact with the lower surface of the PCM layer. The conductive electrode is in contact with the upper surface of the PCM layer.

IPC Classes  ?

  • H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N 79/00 - Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group

21.

MULTISPECTRAL REFLECTION IMAGING SYSTEM

      
Application Number 18478303
Status Pending
Filing Date 2023-09-29
First Publication Date 2024-04-04
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Le Perchec, Jérôme
  • Dupoy, Mathieu

Abstract

An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

IPC Classes  ?

  • G01N 21/47 - Scattering, i.e. diffuse reflection

22.

MEMS-TYPE INERTIAL SENSOR WITH SPECIFIC MECHANICAL LINK

      
Application Number 18478405
Status Pending
Filing Date 2023-09-29
First Publication Date 2024-04-04
Owner COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Joet, Loïc
  • Rey, Patrice

Abstract

A micro-electromechanical device of the inertial sensor type, includes a support, a movable frame, translationally guided along an axis of displacement parallel to the support, and including a proof mass which extends from a first end, connected to the support through a mechanical link, up to a second end, the mass being connected, on the side of the second end, to a member for detecting pivoting of the mass with respect to the frame. The link includes a thin, flexible wall which extends parallel to the support, from the frame to the first end of the proof mass, along a mean line which is parallel to the axis of displacement of the frame.

IPC Classes  ?

  • G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure

23.

ELECTRONIC CHIP WITH UBM-TYPE METALLIZATION

      
Application Number 18477544
Status Pending
Filing Date 2023-09-28
First Publication Date 2024-04-04
Owner Commissariat à l'Énergie Atomique et aux Énergies Alternatives (France)
Inventor
  • Lobre, Clément
  • Serres, Eva
  • Dupre, Ludovic

Abstract

An electronic chip including a substrate and, on the side of one face of the substrate, a metal pad intended to receive a soldering material, the pad including, in order from said face of the substrate, a first metal layer, an electrically conductive barrier layer, and a second metal layer, wherein an electrically insulating barrier layer is arranged on, and in contact with, the sidewall of the first metal layer over the entire periphery of the metal pad.

IPC Classes  ?

  • H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

24.

DEVICE FOR REGROWTH OF A THICK STRUCTURE, PHOTONIC DEVICE COMPRISING THE SAME AND ASSOCIATED METHODS OF FABRICATION

      
Application Number 17769153
Status Pending
Filing Date 2020-10-15
First Publication Date 2024-04-04
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES AL TERNATIVES (France)
  • THALES (France)
Inventor
  • Decobert, Jean
  • Besançon, Claire
  • Fournel, Frank

Abstract

A device for regrowth of a thick structure lattice-matched with InP comprising: a Si substrate, an interface layer of SiO2 on the Si substrate, a bonding layer on the interface layer, said bonding layer being made of a III-V material consisting of an alloy of the AlGaInAs family, and a regrowth layer on the bonding layer, said regrowth layer being made of InP.

IPC Classes  ?

  • H01S 5/02 - Structural details or components not essential to laser action

25.

FIXED-BED REACTOR/EXCHANGER PROVIDED WITH AT LEAST ONE HOLLOW BAR GRID FOR CIRCULATING A HEAT TRANSFER FLUID

      
Application Number EP2023076217
Publication Number 2024/068462
Status In Force
Filing Date 2023-09-22
Publication Date 2024-04-04
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor Luc, Bertier

Abstract

The invention relates to a fixed-bed reactor/exchanger (1) for carrying out a thermochemical conversion reaction, comprising a heat exchange grid, the openings of which, which are delimited between adjacent bars, allow the reagents of the desired thermochemical conversion reaction to flow therein, wherein the bars are hollow and effectively constitute channels for the circulation of a heat transfer fluid, by means of which the heat of the reaction can be discharged (or supplied).

IPC Classes  ?

  • B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
  • F28D 7/16 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged in parallel spaced relation
  • F28D 13/00 - Heat-exchange apparatus using a fluidised bed
  • F28D 21/00 - Heat-exchange apparatus not covered by any of the groups

26.

METHOD FOR EXTRACTING DISCRETE NEUTRON COMPONENTS DERIVED FROM PHOTONUCLEAR REACTIONS USING A TRAINED NEURAL NETWORK

      
Application Number FR2023051502
Publication Number 2024/069107
Status In Force
Filing Date 2023-09-28
Publication Date 2024-04-04
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Besnard Vauterin, Clément
  • Blideanu, Valentin
  • Rapp, Benjamin

Abstract

The invention relates to a method for extracting discrete neutron components (derived from photonuclear reactions between photons and at least one chemical element to be detected) from a neutron spectrum derived from photonuclear reactions obtained by irradiating a material comprising the at least one chemical element to be detected with a source of photons, at least one energy of the photons of the source being greater than the photonuclear reaction threshold of the chemical element to be detected, which method uses a multilayer and multichannel neural network having an architecture with a convolution stage and a deconvolution stage. The method comprises a preliminary step of training the neural network by supervised learning and a prediction step using the trained neural network.

IPC Classes  ?

  • G01N 23/221 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by activation analysis
  • G01V 5/00 - Prospecting or detecting by the use of nuclear radiation, e.g. of natural or induced radioactivity

27.

NEGATIVE ELECTRODE FOR LI-ION BATTERY

      
Application Number EP2023076744
Publication Number 2024/068752
Status In Force
Filing Date 2023-09-27
Publication Date 2024-04-04
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • UMICORE (Belgium)
Inventor
  • Porcher, Willy
  • Deilhes, Claire
  • Gutel, Elise
  • Vincens, Christophe

Abstract

The present invention relates to a negative electrode, in particular suitable for use in a lithium-ion battery, having a negative electrode layer formed on at least one surface of a current collector, wherein said negative electrode layer comprises at least one Si-C composite particulate material comprising silicon-based particles and one or more carbonaceous material; particles of at least one uncompressible graphite; and particles of at least one compressible graphite, the total uncompressible graphite content ranging from 2% to 60% by mass of the total mass of the negative electrode layer.

IPC Classes  ?

  • H01M 4/134 - Electrodes based on metals, Si or alloys
  • H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
  • H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 4/02 - Electrodes composed of, or comprising, active material

28.

SAFENAI

      
Application Number 019007843
Status Pending
Filing Date 2024-04-02
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
NICE Classes  ?
  • 09 - Scientific and electric apparatus and instruments
  • 42 - Scientific, technological and industrial services, research and design

Goods & Services

Logiciels d’intelligence artificielle; logiciels interactifs basés sur l’intelligence artificielle; équipements de traitement de données basé sur l’intelligence artificielle; systèmes de traitement de données basé sur l’intelligence artificielle; tous ces produits étant utilisés dans le domaine du développement de solutions d’intelligence artificielle, de la gestion des risques, de la responsabilité et de la conformité en matière réglementaire, industrielle, technologique, commerciale, financière, opérationnelle, environnementale, de santé et de sécurité. Conseil en intelligence artificielle; plates-formes pour intelligence artificielle en tant que logiciel-service [SaaS]; recherche et développement dans le domaine de l’intelligence artificielle; recherche en matière de traitement de données basé sur l’intelligence artificielle; conception et développement de programmes et de systèmes pour traitement de données basés sur l’intelligence artificielle; services d'ingénierie en matière de traitement de données et d’intelligence artificielle; services de génie logiciel pour le traitement des données et l’intelligence artificielle; tous ces services étant fournis dans le domaine du développement de solutions d’intelligence artificielle, de la gestion des risques, de la responsabilité et de la conformité en matière réglementaire, industrielle, technologique, commerciale, financière, opérationnelle, environnementale, de santé et de sécurité.

29.

Fluiidd

      
Application Number 1782348
Status Registered
Filing Date 2024-01-24
Registration Date 2024-01-24
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
NICE Classes  ?
  • 09 - Scientific and electric apparatus and instruments
  • 42 - Scientific, technological and industrial services, research and design

Goods & Services

Measuring instruments and apparatus; apparatus and instruments for control [inspection]; quality control and testing devices; data acquisition apparatus; data processing apparatus; diagnostic apparatus, not for medical use; apparatus for physical analysis not for medical purposes; electronic imaging devices; imaging apparatus; non-destructive control apparatus; non-destructive test apparatus; sensors, detectors and monitoring instruments; tomographic instruments other than for medical use; tomographic apparatus other than for medical use; software; artificial intelligence software; software for monitoring, analyzing, controlling and implementing operations in the physical world; none of these products being intended to facilitate the sharing and rental of vehicles. Non-medical imaging services; non-destructive control services; non-destructive test services; non-destructive trial services; design and development of testing and analysis methods; technical data analysis services.

30.

CIRCUIT FOR NON-DESTRUCTIVE READING OF FERROELECTRIC MEMORIES

      
Application Number 18237333
Status Pending
Filing Date 2023-08-23
First Publication Date 2024-03-28
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Billoint, Olivier
  • Grenouillet, Laurent

Abstract

A data storage circuit includes a matrix of memory cells such that each memory cell comprises: a read circuit associated with at least one memory cell, comprising: a capacitive transimpedance amplifier stage configured to read a datum stored in a memory cell; the capacitive transimpedance amplifier stage comprising: an operational amplifier; a feedback capacitive impedance mounted between the output and the first input of the operational amplifier; a sequencer circuit configured to, following the reading of a datum corresponding to the second logic state, apply a control signal to the first input/output node having an amplitude lower than the first reference signal and maintain the selection transistor in an on state so as to replace, in the selected elementary storage component, a level of charges corresponding to the second logic state.

IPC Classes  ?

  • G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

31.

NOVEL HUMAN ERYTHROID PROGENITOR CELL LINE HIGHLY PERMISSIVE TO B19 INFECTION AND USES THEREOF

      
Application Number 18256801
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-03-28
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • LABORATOIRE FRANCAIS DU FRACTIONNEMENT ET DES BIOTECHNOLOGIES (France)
Inventor
  • Kadri, Zahra
  • Chretien, Stany
  • Payen, Emmanuel
  • You, Bruno
  • Ducloux, Celine

Abstract

The present invention concerns a novel human erythroid progenitor cell line, wherein at least 90% of the cells are CD36+ CD44−CD71+; and wherein the cells:—do not express the gene encoding the receptor of Granulocyte-macrophage colony-stimulating factor (GM-CSF-R gene) or express GM-CSF-R gene at a lower level than the cells of human UT-7/Epo-S1 cell line; and—express the gene encoding the receptor of erythropoietin (Epo-R gene). The present invention also concerns the uses thereof for producing, detecting, or quantifying parvovims B19. The present invention allows the use of the cell lines for 1) a highly sensitive B19 infectious particles detection, and, 2) the efficient production of infectious B19 particles.

IPC Classes  ?

  • C12N 5/078 - Cells from blood or from the immune system
  • C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell lines; Tissues; Cultivation or maintenance thereof; Culture media therefor
  • C12N 7/00 - Viruses, e.g. bacteriophages; Compositions thereof; Preparation or purification thereof
  • G01N 33/50 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing

32.

INTERCONNECTOR FOR SOLAR CELL STRINGS INTENDED TO FORM A PHOTOVOLTAIC MODULE

      
Application Number 18257439
Status Pending
Filing Date 2021-12-16
First Publication Date 2024-03-28
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Roujol, Yannick
  • Gaume, Julien
  • Jamin, Clément
  • Peron, Baptiste

Abstract

An interconnector for solar cell strings intended to form a photovoltaic module, the interconnector comprising at least one cell interconnecting strip extending beyond a cell located at the end of the string through an end, and at least one string interconnecting strip, a section of one from among the cell interconnecting strip and the string interconnecting strip has a substantially constant surface, and a variable shape between a first zone of a first thickness and a second zone of a second thickness, the second thickness being strictly less than the first thickness and the second thickness being strictly less than 50 μm. Each second zone thus constitutes a resistance welding zone without loss in terms of conduction. Without extra thickness at the interconnections, the risk of the module breaking is limited.

IPC Classes  ?

  • H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
  • H01L 31/048 - Encapsulation of modules
  • H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

33.

METHOD FOR DETERMINING A CENTRAL WAVELENGTH OF A SPECTRAL LINE WITH HIGH ACCURACY AND ASSOCIATED SYSTEM

      
Application Number EP2023074973
Publication Number 2024/061690
Status In Force
Filing Date 2023-09-12
Publication Date 2024-03-28
Owner COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Sirven, Jean-Baptiste
  • Touchet, Kévin
  • Chartier, Frédéric

Abstract

The invention relates to a method (100) for determining a central wavelength of interest (λc) of a spectral line of interest, comprising the steps of: - A detecting, at a time t1, a first reference measured profile (Ps1ref), • B then detecting, at a time t0, a measured profile of interest (PSech) issued by said sample of interest, • C then detecting, at a time t2, a second reference measured profile (Ps2ref) issued by a reference source (Sref), • D processing said first and second reference measured profiles and processing the measured profile of interest, • E determining a reference position referred to as the intermediate reference position (P0ref) at the time t0 by interpolation, • F determining a value of the central wavelength of interest from a difference between said position of interest (Pech) and said intermediate reference position (P0ref), from said known value of the reference wavelength and from a linear dispersion (DL) of the spectrometer and of the associated detector.

IPC Classes  ?

  • G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
  • G01N 21/71 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
  • G01J 3/32 - Investigating bands of a spectrum in sequence by a single detector
  • G01J 3/28 - Investigating the spectrum
  • G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/443 - Emission spectrometry

34.

SYSTEM FOR MEASURING A CENTRAL WAVELENGTH OF A SPECTRAL LINE WITH HIGH ACCURACY AND ASSOCIATED METHOD

      
Application Number EP2023075943
Publication Number 2024/061969
Status In Force
Filing Date 2023-09-20
Publication Date 2024-03-28
Owner COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Sirven, Jean-Baptiste
  • Touchet, Kévin
  • Chartier, Frédéric

Abstract

Disclosed is a system (10) for measuring a central wavelength of interest (λc) of a spectral line of interest (RSe) measured by a spectrometer, the system comprising: - a detecting system comprising a spectrometer (Spectro) associated with a detector (Det) - a Y-shaped optical fiber (FOY) configured such that: • the first input collects a light signal (SLech) issued by the sample, called the sample signal, • the second input collects a light signal (SLref) issued by a reference source (Sref), called the reference signal, • the output is coupled to an input of the spectrometer, the measuring system being configured so that the detector detects said sample signal and said reference signal simultaneously or sequentially over time, the measuring system further comprising a processing unit (UT) configured to: • process said measured profile of interest and said measured reference profile, • determine a value of the central wavelength of interest from a difference between said position of interest and reference position, from said known value of the reference wavelength and from a linear dispersion (DL) of the detection system.

IPC Classes  ?

  • G01J 3/02 - Spectrometry; Spectrophotometry; Monochromators; Measuring colours - Details
  • G01J 3/32 - Investigating bands of a spectrum in sequence by a single detector
  • G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
  • G01N 21/71 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
  • G01J 3/28 - Investigating the spectrum
  • G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
  • G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
  • G01J 3/443 - Emission spectrometry

35.

SIMPLIFIED STRUCTURE OF TWO-TERMINAL TANDEM SOLAR CELLS WITH TRANSPARENT CONDUCTING OXIDE JUNCTION MATERIAL

      
Application Number 18257812
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-03-28
Owner
  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
  • 3SUN S.R.L. (Italy)
Inventor
  • Puaud, Apolline
  • Matheron, Muriel
  • Munoz, Maria-Delfina

Abstract

A tandem photovoltaic structure including, from the rear face to the front face: a first SHJ solar cell comprising a first layer of P-type doped amorphous silicon and a substrate of N-type doped crystalline silicon, a junction layer, a second perovskite-type solar cell comprising an active layer and a second P-type layer, the junction layer being made of N-type TCO and being in direct contact either with the second P-type layer or with the first P-type layer, one amongst the first or second solar cell also comprising an N-type layer, the junction layer serving as an N-type layer in the other one amongst the first or second solar cell.

IPC Classes  ?

  • H10K 39/15 - Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells

36.

GERMANIUM PHOTODIODE WITH OPTIMISED METAL CONTACTS

      
Application Number 18264502
Status Pending
Filing Date 2022-02-09
First Publication Date 2024-03-28
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Aliane, Abdelkader
  • Kaya, Hacile

Abstract

A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

IPC Classes  ?

  • H01L 31/0224 - Electrodes
  • H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
  • H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
  • H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

37.

NEW IRON-BASED ALLOY STRUCTURE

      
Application Number EP2023075786
Publication Number 2024/061897
Status In Force
Filing Date 2023-09-19
Publication Date 2024-03-28
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Maskrot, Hicham
  • Fouchereau, Alexis
  • Puga, Béatriz
  • Bosonnet, Sophie
  • Lomello, Fernando

Abstract

The present invention relates to the development of new iron-based alloys, in particular of a steel having improved mechanical, thermal, and physico-chemical (corrosion) properties. More specifically there is disclosed a steel material having a new microstructure, characterized by a hierarchical triple structuring in which there appears a lattice of internal nanometric sub-cells capable of improving the properties and performance of steels.

IPC Classes  ?

  • C22C 38/00 - Ferrous alloys, e.g. steel alloys
  • C22C 38/02 - Ferrous alloys, e.g. steel alloys containing silicon
  • C22C 38/04 - Ferrous alloys, e.g. steel alloys containing manganese
  • C22C 38/40 - Ferrous alloys, e.g. steel alloys containing chromium with nickel
  • C22C 33/02 - Making ferrous alloys by powder metallurgy
  • C22C 38/44 - Ferrous alloys, e.g. steel alloys containing chromium with nickel with molybdenum or tungsten
  • C22C 38/58 - Ferrous alloys, e.g. steel alloys containing chromium with nickel with more than 1.5% by weight of manganese
  • B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
  • B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
  • B22F 10/28 - Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
  • B22F 10/366 - Scanning parameters, e.g. hatch distance or scanning strategy
  • B22F 10/64 - Treatment of workpieces or articles after build-up by thermal means
  • B33Y 10/00 - Processes of additive manufacturing
  • B33Y 40/20 - Post-treatment, e.g. curing, coating or polishing
  • B33Y 70/00 - Materials specially adapted for additive manufacturing

38.

METHOD FOR BONDING AN INTERCONNECTION ELEMENT TO A PHOTOVOLTAIC CELL, AND ASSOCIATED DEVICE

      
Application Number EP2023076133
Publication Number 2024/062062
Status In Force
Filing Date 2023-09-21
Publication Date 2024-03-28
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Bettinelli, Armand
  • Monna, Rémi

Abstract

One aspect of the invention relates to a method for bonding an interconnection element (INTR) to a photovoltaic cell comprising the steps of: - depositing an electrically conductive adhesive film (F1) on the interconnection element (INTR); and - depositing the interconnection element (INTR) on the photovoltaic cell (CELL1), the electrically conductive adhesive film (F1) being arranged in contact with the photovoltaic cell (CELL1).

IPC Classes  ?

  • H01L 31/048 - Encapsulation of modules
  • H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

39.

MOS TRANSISTOR ON SOI STRUCTURE

      
Application Number 18190893
Status Pending
Filing Date 2023-03-27
First Publication Date 2024-03-21
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • STMicroelectronics (Crolles 2) SAS (France)
Inventor
  • Cremer, Sebastien
  • Mota Frutuoso, Tadeu
  • Garros, Xavier
  • Duriez, Blandine

Abstract

The present description concerns an electronic device comprising: —a silicon layer having a first surface and a second surface, —an insulating layer in contact with the first surface of the silicon layer, —at least one transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the gate portion being less heavily doped than the rest of the gate region.

IPC Classes  ?

  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
  • H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

40.

MOS TRANSISTOR ON SOI STRUCTURE

      
Application Number 18190897
Status Pending
Filing Date 2023-03-27
First Publication Date 2024-03-21
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • STMicroelectronics (Crolles 2) SAS (France)
Inventor
  • Mota Frutuoso, Tadeu
  • Garros, Xavier
  • Duriez, Blandine
  • Cremer, Sebastien

Abstract

The present description concerns an electronic device comprising: a silicon layer, an insulating layer in contact with a first surface of the silicon layer, a transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the device further comprising, under the gate portion, a partial insulating trench in the silicon layer extending from a second surface of the silicon layer down to a depth smaller than the thickness of the silicon layer.

IPC Classes  ?

  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

41.

METHOD FOR MANUFACTURING AN ELECTRICAL CONDUCTOR, SUCH AS A CURRENT ROD, FOR A HIGH-TEMPERATURE ELECTROCHEMICAL DEVICE

      
Application Number 18257245
Status Pending
Filing Date 2021-12-16
First Publication Date 2024-03-21
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Planque, Michel
  • Cubizolles, Géraud

Abstract

A method for manufacturing an electrical conductor, such as a current rod, comprising the following successive steps: —providing a core made of a first metallic material, —providing a sheath made of a second metallic material, the sheath being intended to cover a first part of the core, —providing a connection terminal made of a third metallic material, —assembling the core and the connection terminal, by crimping, or by crimping and brazing, or by braze welding, or by brazing, —assembling the core and the connection terminal with the sheath.

IPC Classes  ?

  • H01M 8/0206 - Metals or alloys
  • B23K 20/02 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press
  • B32B 1/08 - Tubular products
  • B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
  • H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
  • H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

42.

AUTOMATIC DEPLOYMENT OF A LINEAR WIRELESS MESH COMMUNICATIONS NETWORK

      
Application Number 18265645
Status Pending
Filing Date 2021-11-26
First Publication Date 2024-03-21
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Janneteau, Christophe
  • Boc, Michael

Abstract

A device and a method for automatically deploying a communication network between a moving vehicle VM and a rear base BA, the moving vehicle moving from an initial position along a trajectory T. The deployment involves positioning a plurality of communication relay appliances along the trajectory of the VM to form, between the VM and the rear base, a two-way, linear wireless mesh communication network, such that the communications between the moving vehicle and the rear base maintain a communication link quality Q that is equal to or greater than a threshold value S. Each communication relay appliance is an autonomous mobile appliance, called Autonomous Robotic Communication Relay RCRA, capable of autonomously moving and of being positioned along the trajectory T followed by the VM in order to allow the quality of the communication link to be maintained.

IPC Classes  ?

  • H04W 36/00 - Handoff or reselecting arrangements
  • H04W 36/30 - Reselection being triggered by specific parameters by measured or perceived connection quality data
  • H04W 36/32 - Reselection being triggered by specific parameters by location or mobility data, e.g. speed data

43.

PHASE CHANGE MEMORY CELL

      
Application Number 18467653
Status Pending
Filing Date 2023-09-14
First Publication Date 2024-03-21
Owner Commissariat á I'Énergie Atomique et aux Énergies Alternatives (France)
Inventor
  • Navarro, Gabriele
  • Bourgeois, Guillaume
  • Cyrille, Marie-Claire

Abstract

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.

IPC Classes  ?

  • H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
  • H10N 70/20 - Multistable switching devices, e.g. memristors

44.

RADIO FREQUENCY TRANSMISSION FRONT-END MODULE AND ASSOCIATED MANUFACTURING METHOD

      
Application Number 18470481
Status Pending
Filing Date 2023-09-20
First Publication Date 2024-03-21
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Serhan, Ayssar
  • Reynier, Pascal
  • Giry, Alexandre
  • Coudrain, Perceval
  • Michel, Jean-Philippe

Abstract

An integration system and method for the manufacture of radio frequency transmission front-end modules with radio frequency integrated circuit(s) and self-biased magnetic component(s) integrated on a “Wafer Level Packaging”-type technology. This integration makes it possible to design efficient, compact and low-cost front-end modules.

IPC Classes  ?

45.

METHOD FOR THE SOLID PHASE CRYSTALLISATION OF AN AMORPHOUS LAYER

      
Application Number 18470556
Status Pending
Filing Date 2023-09-20
First Publication Date 2024-03-21
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Kerdiles, Sébastien
  • Acosta Alba, Pablo
  • Alvarez Alonso, Angela
  • Opprecht, Mathieu

Abstract

A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

46.

METHOD FOR PRODUCING AN INDIVIDUALIZATION ZONE OF AN INTEGRATED CIRCUIT

      
Application Number 18318068
Status Pending
Filing Date 2023-05-16
First Publication Date 2024-03-21
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Landis, Stefan
  • Exbrayat, Yorrick

Abstract

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level, and an interconnection level comprising vias, includes providing the first level and a dielectric layer, forming an etching mask having openings on the dielectric layer, and randomly depositing particles in the openings, by deposition then recirculating the particles on the surface of the etching mask. The dielectric layer is etched through mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

47.

METHOD FOR TRANSFERRING AN ADHESIVE LAYER OF THERMOPLASTIC POLYMER(S) FROM A FIRST SUBSTRATE TO A SECOND SUBSTRATE

      
Application Number 18456604
Status Pending
Filing Date 2023-08-28
First Publication Date 2024-03-21
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Montmeat, Pierre
  • Fournel, Frank
  • Enyedi, Grégory
  • Vaudaine, Simon

Abstract

A method for transferring an adhesive layer of thermoplastic polymer(s) from a first substrate to a second substrate including: depositing an antiadhesive layer on a first substrate, this layer being deposited on the periphery of the top face of said substrate, referred to as peripheral layer, thus providing on said top face a zone devoid of said layer, referred to as central zone; depositing an adhesive layer of thermoplastic polymer(s) on said central zone; depositing an antiadhesive layer on a second substrate, this layer being deposited on the top face of the second substrate excluding its periphery, said periphery being thus devoid of said antiadhesive layer; bonding the first substrate and the second substrate consisting of thermocompressing the top face of the first substrate onto the top face of the second substrate; removing the first substrate, whereby the second substrate remains, of which the top face is coated by the adhesive layer of thermoplastic polymer(s).

IPC Classes  ?

  • C09J 7/20 - Adhesives in the form of films or foils characterised by their carriers

48.

PHASE CHANGE MEMORY CELL

      
Application Number 18467640
Status Pending
Filing Date 2023-09-14
First Publication Date 2024-03-21
Owner Commissariat à I'Énergie Atomique et aux Énergies Alternatives (France)
Inventor
  • Navarro, Gabriele
  • Bourgeois, Guillaume
  • Cyrille, Marie-Claire

Abstract

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.

IPC Classes  ?

  • H10N 70/20 - Multistable switching devices, e.g. memristors
  • H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
  • H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

49.

METHOD FOR OPENING AND DISCHARGING AN ELECTROCHEMICAL GENERATOR

      
Application Number FR2023051373
Publication Number 2024/056962
Status In Force
Filing Date 2023-09-11
Publication Date 2024-03-21
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • ORANO (France)
Inventor
  • Billy, Emmanuel
  • Porthault, Hélène

Abstract

The invention relates to a method for opening and discharging an electrochemical generator (10) comprising a negative electrode containing lithium or sodium and a positive electrode optionally containing lithium or sodium, the method comprising the following successive steps: - opening the electrochemical generator (10) in a cutting zone, with a cutting element (20), preferably having an electrical resistance greater than 100 mΩ, the electrochemical generator being opened while spraying the cutting zone with a first solution (100), - discharging the electrochemical generator by partially or completely submerging the electrochemical generator (10) in a second solution (200).

IPC Classes  ?

  • B09B 3/35 - Shredding, crushing or cutting
  • H01M 10/44 - Methods for charging or discharging
  • H01M 10/54 - Reclaiming serviceable parts of waste accumulators
  • H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
  • H01M 10/052 - Li-accumulators
  • H01M 10/054 - Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
  • H01M 10/0569 - Liquid materials characterised by the solvents
  • B09B 101/16 - Batteries

50.

EcoGlassFab

      
Application Number 018999630
Status Pending
Filing Date 2024-03-15
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
NICE Classes  ?
  • 09 - Scientific and electric apparatus and instruments
  • 40 - Treatment of materials; recycling, air and water treatment,
  • 42 - Scientific, technological and industrial services, research and design

Goods & Services

Dispositifs de calcul; systèmes de traitement de données; équipements de traitement de données; logiciels. Services d'information, de conseils et d'assistance en matière de recyclage de déchets et d'ordures. Infrastructure en tant que service (IaaS); plates-formes pour intelligence artificielle en tant que logiciel-service [SaaS]; fourniture d'informations technologiques concernant les innovations écologiques et respectueuses de l'environnement; services de conception et développement de logiciels d'évaluation et de calcul de données; études techniques; ingénierie; conception de verre et de produits en verre; services de recherche et d'analyses chimiques; services d'analyse chimique destinés à la conception; évaluation et essai de matériaux; conception et essais de nouveaux produits; réalisation d'études de faisabilité technique; services d'études de faisabilité en matière de conception; recherche et développement de nouveaux produits pour le compte de tiers, dans le domaine du verre; services de tests de conformité; services de test pour la certification de qualité ou de normes; test, analyse et évaluation des produits et services de tiers à des fins de certification.

51.

FAULT TOLERANT PREPARATION OF QUANTUM POLAR CODES

      
Application Number EP2023074579
Publication Number 2024/052460
Status In Force
Filing Date 2023-09-07
Publication Date 2024-03-14
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • UNIVERSITÉ GRENOBLE ALPES (France)
  • INSTITUT POLYTECHNIQUE DE GRENOBLE (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
Inventor
  • Savin, Valentin
  • Goswami, Ashutosh-Kumar
  • Mhalla, Mehdi

Abstract

The present invention concerns a method and a system of fault tolerant preparation of quantum polar code states, comprising: -a set of single qubit Pauli measurement circuits (3) configured to prepare an initial quantum system 5 of N = 2n single-qubit states associated to an initial quantum base, -a set of two qubit Pauli measurement circuits (7) configured to recursively prepare a quantum polar code |q2n)s °f codelength N = 2n, wherein at each recursive level k, where k = 1 to n, a set of 2n/2k quantum polar code states ||<72fc) j(k) = 1 to 2n/2k of codelengths 2k, siW referenced by corresponding sets Sj^ of indices comprising first and second sets of frozen indices = [17, ■ ■■, i7(k)} and X7(k) = {(i + !);(/<),..., 27k k)} is prepared, each quantum polar code state |q2k) being prepared by the application of two qubit Pauli measurement P ® P circuits on two equivalent polar code states 2^ ) 01 aanndd belonging to the output of the antecedent recursive level k — 1 and referenced by two corresponding sets of iinnddiicceess

IPC Classes  ?

  • G06N 10/20 - Models of quantum computing, e.g. quantum circuits or universal quantum computers
  • G06N 10/70 - Quantum error correction, detection or prevention, e.g. surface codes or magic state distillation
  • G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control

52.

METHOD FOR MANUFACTURING A STRUCTURE FOR TRANSFERRING CHIPS

      
Application Number FR2023051336
Publication Number 2024/052617
Status In Force
Filing Date 2023-09-05
Publication Date 2024-03-14
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Castan, Clément
  • Dechamp, Jérôme
  • Bally, Laurent
  • Sanchez, Loic
  • Fournel, Frank

Abstract

The invention relates to a method for manufacturing a transfer structure (100) comprising the following steps: i) providing an intermediate substrate (110); ii) bonding chips (121, 122) to a first surface of an intermediate substrate (110), whereby a tiling of chips (121, 122) is formed, the chips (121, 122) covering both the central region and the peripheral region of the intermediate substrate (110), the chips (122) positioned in the peripheral region projecting beyond the surface of the intermediate substrate (110), the method further comprising a step iii) of trimming, after step ii), during which the ends of the chips (122) projecting beyond the surface of the intermediate substrate (110) are removed, whereby the chips (122) in the peripheral portion are truncated, and a transfer structure (100) comprising an intermediate structure (110) covered by a donor pseudo-substrate formed of a tiling of chips (121, 122) is obtained, the tiling of the chips (121, 122) being offset with respect to the crystallographic plane of the intermediate substrate (110).

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/762 - Dielectric regions
  • H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

53.

DOPE P GALIUM NITRIDE ELECTRONIC COMPONENT

      
Application Number 18324562
Status Pending
Filing Date 2023-05-26
First Publication Date 2024-03-14
Owner COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor Morvan, Erwan

Abstract

An electronic component includes a substrate, an active stack formed above the substrate and including: a layer of p-type doped Gallium Nitride GaN, disposed above the substrate, and a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN; the component including two side zones located on either side of the layer of p-type doped GaN, the two side zones being oxygen-implanted.

IPC Classes  ?

  • H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
  • H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
  • H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
  • H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
  • H01L 29/66 - Types of semiconductor device

54.

PORTABLE DEVICE FOR ESTIMATING A GAS CONCENTRATION RELEASED BY A MEDIUM

      
Application Number 18456815
Status Pending
Filing Date 2023-08-28
First Publication Date 2024-03-14
Owner
  • Commissariat à l'Energie Atomique et aux Energies Alternatives (France)
  • L3 MEDICAL (France)
Inventor
  • Grangeat, Pierre
  • Jaillet-Casillas, Myrna Violeta
  • Stocard, Fabien

Abstract

Measuring device (1) intended to be disposed against a medium, the device extending between a contact face (10) intended to be applied facing the medium and a distal end (4), the device including a lateral wall (5) extending between the contact face and the distal end, the device including: at the level of the contact face (10), at least one admission opening (12) configured to collect a transcutaneous gas of interest emitted through the medium, the admission opening being through the contact face; a measuring chamber (20) including a gas sensor (23), the gas sensor being configured to measure a concentration of the gas of interest flowing through the measuring chamber; a collecting chamber (30) connected to the measuring chamber and delimited by an opening on the lateral wall, the collecting chamber including at least one lateral opening (34) through the lateral face or on the top wall of the collecting chamber so as to admit a vector gas into the collecting chamber; the device being characterized in that: the measuring chamber (20) is disposed between the contact face (10) and the collecting chamber (30); the device includes a pump (41) configured to drive a vector gas through the collecting chamber to an evacuation opening (42) so that driving the vector gas induces aspiration of the gas of interest from the contact face to the collecting chamber via the measuring chamber.

IPC Classes  ?

  • A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
  • A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters

55.

LOW NOISE PIXEL FOR IMAGE SENSOR

      
Application Number 18509746
Status Pending
Filing Date 2023-11-15
First Publication Date 2024-03-14
Owner Commissariat à l'Énergie Atomique et aux Énergies Alternatives (France)
Inventor Palmigiani, Gaelle

Abstract

A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

IPC Classes  ?

  • H04N 25/65 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
  • H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

56.

METHOD FOR JOINING, BY DIRECT BRAZING, A FIRST PART AND A SECOND PART, INCLUDING STEPS OF PREPARING THE SURFACE OF AT LEAST ONE OF THE PARTS

      
Application Number 18260803
Status Pending
Filing Date 2022-01-10
First Publication Date 2024-03-07
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Largiller, Grégory
  • Emonot, Philippe
  • Voytovych, Rayisa

Abstract

A method for joining, by brazing, a first part and a second part, the steps of preparing at least one of the parts including the following: a) providing a part intended to be brazed, the part being made of carbon or based on titanium, nickel or a CoCr alloy, b) performing inert gas plasma treatment on the part whereby the part is cleaned and an active surface is formed on the part, c) depositing a first layer comprising an active element on the active surface of the part, the active element being a carbide-forming element, d) depositing a second layer of gold on the first layer, whereby the first layer is protected from oxidation and good wetting is ensured.

IPC Classes  ?

  • B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
  • B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C

57.

METHOD FOR STRIPPING URANIUM(VI) AND AN ACTINIDE(IV) FROM AN ORGANIC SOLUTION BY OXALIC PRECIPITATION

      
Application Number 18458241
Status Pending
Filing Date 2023-08-30
First Publication Date 2024-03-07
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
  • Université de Montpellier (France)
  • École nationale supérieure de chimie de Montpellier (France)
Inventor
  • Meyer, Daniel
  • Bertrand, Muriel
  • Bourgeois, Damien
  • Durain, Julie

Abstract

A method for stripping U(VI) and an An(IV) from an organic solution including tri-n-butyl phosphate in an organic diluent, the solution containing U(VI) and the An(IV) present as U(VI) nitrate and An(IV) nitrate at concentrations such that the U(VI) nitrate concentration is higher than the An(IV) nitrate concentration, and the sum of the U(VI) nitrate and An(IV) nitrate concentrations is ≥55 g/L. The method includes contacting the organic solution and an aqueous solution of nitric and oxalic acids, the oxalic acid concentration in the aqueous solution and the O/A volume ratio selected so that the oxalic acid is deficient with respect to the stoichiometric conditions of a complete precipitation of U(VI) and actinide(IV), to obtain a precipitate containing the actinide(IV) in oxalate form and a fraction of the U(VI) in oxalate form with a U(VI)/actinide(IV) mass ratio of between 0.5 and 5; and separating the precipitate from the organic and aqueous solutions.

IPC Classes  ?

58.

CONDITIONAL AUTHENTICATION ACCESS CONTROL METHOD

      
Application Number 18460075
Status Pending
Filing Date 2023-09-01
First Publication Date 2024-03-07
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Sirdey, Renaud
  • Boudguiga, Aymen
  • Zuber, Martin

Abstract

A method for controlling access of a user equipped with a terminal to a physical or logical resource, the method involving a secure cryptographic device forming a token corresponding to an access criterion, the access token being intended to generate a keystream masking a biometric reference of the user obtained by a biometric reader of the terminal. The biometric reference thus masked is encrypted by fully homomorphic encryption and stored in a database hosted by a remote server. An access control operator obtains a biometric characteristic of the user, homomorphically encrypts it and transmits it to the remote server. This server compares the first and second biometric models in the homomorphic domain and supplies the homomorphically-encrypted result of the comparison to the access control operator. The latter grants or denies access to the user according to the result of the comparison, after having decrypted it.

IPC Classes  ?

  • H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system

59.

TUNGSTEN-SUBSTITUTED TITANIUM-NIOBIUM MIXED OXIDE ACTIVE MATERIAL

      
Application Number IB2023000493
Publication Number 2024/047396
Status In Force
Filing Date 2023-09-01
Publication Date 2024-03-07
Owner COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Colin, Jean-François
  • Martinet, Sébastien
  • Farina, Filippo
  • Mercier-Guyon, Benjamin

Abstract

(1+x)(2-2x)x7 7 (I) wherein x is selected from the range of from 0.1 to 0.2.

IPC Classes  ?

  • C01G 33/00 - Compounds of niobium
  • C01G 41/00 - Compounds of tungsten
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 10/052 - Li-accumulators
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries

60.

IMAGE SENSOR

      
Application Number 18186115
Status Pending
Filing Date 2023-03-17
First Publication Date 2024-03-07
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • STMicroelectronics (Crolles 2) SAS (France)
Inventor
  • Crocherie, Axel
  • Ostrovsky, Alain
  • Vaillant, Jerome
  • Deneuville, Francois

Abstract

The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

IPC Classes  ?

61.

METHOD FOR THE MANUFACTURE OF ELECTRODES

      
Application Number 18260874
Status Pending
Filing Date 2021-12-27
First Publication Date 2024-03-07
Owner Commissariat A L'Energie Atomique Et Aux Energies Alternatives (France)
Inventor
  • Bascour, Dominique
  • Braida, Marc-David
  • Odoni, Ludovic
  • Abusleme, Julio A
  • Rouault, Hélène
  • Besnard, Gaëlle
  • Merchat, Léo
  • Salomon, Jérémie
  • Amestoy, Benjamin

Abstract

The present invention pertains to a continuous process for the manufacture of an electrode, to the electrode obtained therefrom and to an electrochemical device comprising said electrode.

IPC Classes  ?

  • H01M 4/04 - Processes of manufacture in general
  • H01M 4/139 - Processes of manufacture
  • H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers

62.

METHOD AND DEVICE FOR TRANSMITTING OR EXCHANGING ANONYMOUS INFORMATION WITHIN A TRUSTED NETWORK

      
Application Number 18274226
Status Pending
Filing Date 2022-01-26
First Publication Date 2024-03-07
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Laurent, Frédéric
  • Olivereau, Alexis
  • Polve, Baptiste

Abstract

A device and a method for the anonymous transmission of information, the transmission being a point-to-multipoint communication or a multipoint-to-multipoint communication between members of one and the same trusted network, a trusted network being predefined by a plurality of members and a plurality of independent proxies, the communication within a trusted network taking place on an anonymization network platform that masks the IP addresses of the members of the trusted network, the method being computer-implemented and comprising steps of: a member of a trusted network, comprising N′ members and N proxies, generating a plurality N of complementary data fragments, from an initial data packet, such that recombining the N complementary fragments makes it possible to reconstruct the initial data packet; the sending member transmitting, via the anonymization network platform, each generated complementary fragment to an independent proxy from among the N proxies, respectively; each independent proxy retransmitting, via the anonymization network platform, the complementary fragment received from the sending member to the plurality N′ of members of the trusted network; and each receiving member of the trusted network recombining the plurality N of received complementary fragments in order to reconstruct the initial data packet.

IPC Classes  ?

  • H04L 9/40 - Network security protocols
  • G06F 21/62 - Protecting access to data via a platform, e.g. using keys or access control rules

63.

METHOD FOR ESTIMATING A CONCENTRATION OF GAS EMITTED BY A MEDIUM

      
Application Number EP2023073458
Publication Number 2024/046930
Status In Force
Filing Date 2023-08-27
Publication Date 2024-03-07
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • INSTITUT POLYTECHNIQUE DE GRENOBLE (France)
  • UNIVERSITE GRENOBLE ALPES (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
Inventor
  • Grangeat, Pierre
  • Comsa, Maria-Paula
  • Koenig, Anne
  • Phlypo, Ronald

Abstract

The invention relates to a method for estimating the content of a gas-of-interest in a medium using a measurement device intended to be placed in contact with the medium, the device extending between a contact face intended to be applied against the medium and a distal end, the device comprising a side wall extending between the contact face and the distal end, and the device comprising: on the contact face, at least one intake opening configured to collect the gas-of-interest emitted by the medium, the intake opening extending through the contact face; a measurement chamber comprising a gas sensor, the gas sensor being configured to measure a concentration of the gas-of-interest flowing through the measurement chamber; a collection chamber (30) connected to the measurement chamber and delimited by the side wall, the collection chamber comprising at least one side opening (34) extending through the side face so as to admit ambient air into the collection chamber.

IPC Classes  ?

  • A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
  • G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
  • A61B 5/083 - Measuring rate of metabolism by using breath test, e.g. measuring rate of oxygen consumption
  • A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
  • A61B 5/1477 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using chemical or electrochemical methods, e.g. by polarographic means non-invasive
  • A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

64.

MULTICHANNEL TRANSMIT AND/OR RECEIVE SYSTEM COMPRISING AT LEAST N PARALLEL PROCESSING CHANNELS AND METHOD FOR DECORRELATING QUANTIZATION NOISE IN SUCH A SYSTEM

      
Application Number 18237842
Status Pending
Filing Date 2023-08-24
First Publication Date 2024-02-29
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Morche, Dominique
  • Verdant, Arnaud

Abstract

A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), where OUT is the output signal of the sigma-delta modulator, IN is the input signal of the sigma-delta modulator, FTS is the transfer function of the input signal, Q is the quantization noise and FTB is the transfer function of the quantization noise, the second terms of the transfer function of the sigma-delta modulator only being distinct from one another for two channels Vi, Vj, in order to decorrelate the quantization noise of distinct channels, the first term of said transfer function for channel Vi being equal to the first term of said transfer function for channel Vj.

IPC Classes  ?

  • H03M 3/00 - Conversion of analogue values to or from differential modulation
  • H03M 1/08 - Continuously compensating for, or preventing, undesired influence of physical parameters of noise

65.

METHOD FOR MANUFACTURING AT LEAST ONE PHOTOVOLTAIC CELL USING A PLATE BEARING ON AT LEAST ONE WIRE

      
Application Number 18267901
Status Pending
Filing Date 2021-12-09
First Publication Date 2024-02-29
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Coustier, Fabrice
  • Jay, Frédéric
  • Tomassini, Mathieu

Abstract

A method for manufacturing at least one photovoltaic cell includes the following steps: (a) providing at least one plate, the plate having a first face and a second face opposite the first face; (b) providing a support device; (c) positioning the plate placing the first face of the plate in contact with the support device; (d1) forming a first conductive material on the first face of the plate; (d2) forming a second conductive material on the second face of the plate. At least one of the first and second conductive materials is transparent, the support device includes at least one wire, and, during all or part of step (d1), the first face of the plate bears on the wire.

IPC Classes  ?

  • H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

66.

PROCESS FOR FABRICATING AN OPTOELECTRONIC DEVICE COMPRISING A GERMANIUM-ON-SILICON PHOTODIODE OPTICALLY COUPLED TO AN INTEGRATED WAVEGUIDE

      
Application Number 18359374
Status Pending
Filing Date 2023-07-26
First Publication Date 2024-02-29
Owner Commissariat à l'Energie Atomique et aux Energies Alternatives (France)
Inventor Szelag, Bertrand

Abstract

A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the Si3N4 waveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.

IPC Classes  ?

  • G02B 6/132 - Integrated optical circuits characterised by the manufacturing method by deposition of thin films
  • H01L 31/0232 - Optical elements or arrangements associated with the device
  • H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
  • H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
  • H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

67.

METHOD FOR EXECUTING A MACHINE CODE BY MEANS OF A COMPUTER

      
Application Number 18454173
Status Pending
Filing Date 2023-08-23
First Publication Date 2024-02-29
Owner
  • Commissariat à l'Energie Atomique et aux Energies Alternatives (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
  • SORBONNE UNIVERSITE (France)
Inventor
  • Chamelot, Thomas
  • Courousse, Damien
  • Heydemann, Karine

Abstract

A method for executing a machine code with a computer, including constructing a signature for a current instruction on the basis of signals generated by a stage of a hardware processing path, this stage being a decoder or a stage following the decoder in the hardware processing path, and on the basis of the preceding signature constructed for an instruction which precedes it, then checking the integrity of the executed machine code by comparing the signature constructed for the current instruction with a prestored reference signature, then only when the integrity of the current instruction has been checked successfully, decrypting a cryptogram of the following instruction using the signature constructed for the current instruction.

IPC Classes  ?

  • G06F 9/30 - Arrangements for executing machine instructions, e.g. instruction decode
  • H04L 9/08 - Key distribution
  • H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system

68.

DEVICE FOR MODIFYING THE DIRECTION OF MAGNETIZATION OF A MAGNETIC LAYER, ASSOCIATED METHOD AND SPINTRONIC SYSTEM

      
Application Number 18257161
Status Pending
Filing Date 2021-12-16
First Publication Date 2024-02-29
Owner
  • Commissariat à l'énergie atomique et aux énergies alternatives (France)
  • THALES (France)
  • Centre national de la recherche scientifique (France)
  • UNIVERSITE GRENOBLE ALPES (France)
Inventor
  • Attane, Jean-Philippe
  • Vila, Laurent
  • Bibes, Manuel

Abstract

A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

IPC Classes  ?

  • G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
  • G11C 19/08 - Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/80 - Constructional details
  • H10N 52/00 - Hall-effect devices

69.

TRANSMITTER DEVICE AND METHODS FOR PREDISTORTION AND DECORRELATION OF NOISE IN SUCH A TRANSMITTER DEVICE

      
Application Number 18234231
Status Pending
Filing Date 2023-08-15
First Publication Date 2024-02-29
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor Morche, Dominique

Abstract

A multichannel transmitter device includes, on each channel: a transmission processing channel designed to process an input signal and comprising a predistortion block applying a predistortion to the input signal on the basis of predistortion coefficients, a DAC, a first analogue filter, a power amplifier and a sigma-delta encoder between the predistortion block and the digital-to-analogue converter and designed to carry out notably a quantization of the predistortion block; a return channel associated with the transmission processing channel and comprising a block for estimating predistortion coefficients so as to estimate predistortion coefficients on the basis of the input signal and of a feedback signal; the transmitter device wherein the block for estimating predistortion coefficients is designed to estimate the predistortion coefficients on the basis of at least the input signal and of a signal resulting from the subtraction, from the feedback signal, of a signal representing the quantization noise resulting from the quantization carried out by the sigma-delta encoder.

IPC Classes  ?

70.

CONDUCTIVE AND TRANSPARENT INTERCONNECTION STRUCTURE, ASSOCIATED MANUFACTURING METHOD AND SYSTEM

      
Application Number 18457549
Status Pending
Filing Date 2023-08-29
First Publication Date 2024-02-29
Owner COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Racine, Benoit
  • Haon, Olivier

Abstract

An interconnection structure includes a substrate formed by a first electrically insulating and optically transparent material, the substrate including a first face and an opposite second face, the first face defining a plane of the substrate, and a plurality of transparent electrodes, wherein the transparent electrodes pass through the substrate from the first face to the second face of the substrate in parallel to each other, and are electrically insulated from each other by the first electrically insulating and optically transparent material.

IPC Classes  ?

  • G01N 33/483 - Physical analysis of biological material
  • G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated

71.

SYSTEM AND METHOD FOR CONTROLLING OPERATING MODES OF A SYSTEM

      
Application Number 18259481
Status Pending
Filing Date 2021-12-27
First Publication Date 2024-02-22
Owner Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventor Gradoussoff, Baptiste

Abstract

A system and method for controlling operating modes of a system, each operating mode being implemented by an execution of one or more software components. This control system includes software components called elementary components, each elementary component having at least one input able to receive input data and/or at least one output able to transmit output data; and at least one software meta-component including one or more internal wiring diagrams, each internal wiring diagram defining interconnections between inputs and outputs of elementary components and/or meta-components, a transition logic between states defining a current state of said system and a sequence between states at least some of the states corresponding to an implementation of an internal wiring diagram, a mechanism for controlling the internal configurations, and a programming interface providing services/functions implementing at least one internal wiring scheme.

IPC Classes  ?

  • G05B 19/4155 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
  • B25J 9/16 - Programme controls

72.

FORMATION OF A MICROPOROUS MPL LAYER ON THE SURFACE OF AN ACTIVE LAYER FOR AN ELECTROCHEMICAL CONVERTER

      
Application Number 18336471
Status Pending
Filing Date 2023-06-16
First Publication Date 2024-02-22
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Marty, Clémence
  • Blachot, Jean-François
  • Fouda-Onana, Frédéric
  • Heitzmann, Marie
  • Pauchet, Joël
  • Toudret, Pierre

Abstract

A method may form an electroconductive and hydrophobic microporous layer (MPL) at an active layer surface configured for an electrochemical converter, including: (a) providing a non-aqueous dispersion, called “ink”, including a carbon-based particulate material and an organic solvent; (b) forming an ink deposit at the active layer surface; and (c) evaporating the solvent(s) to form a microporous layer, simultaneously and/or subsequently to the forming (b). The ink may include poly(vinylidene fluoride-co-hexafluoropropene), dissolved in the organic solvent. Ink may prepare such a microporous layer, and a multilayer structure including an active layer supported by a solid electrolyte membrane and contacting, at its face on the opposite side the solid membrane, with a microporous layer obtained by the such a method. A membrane-electrode assembly may include such a multilayer structure. Such an MEA may be used in an individual cell of an electrochemical converter, in particular in a PEMFC.

IPC Classes  ?

  • C09D 11/52 - Electrically conductive inks
  • C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
  • C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
  • C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
  • H01M 8/1004 - Fuel cells with solid electrolytes characterised by membrane-electrode assemblies [MEA]

73.

METHOD FOR PRODUCING AN INDIVIDUALIZATION ZONE OF AN INTEGRATED CIRCUIT

      
Application Number 18350990
Status Pending
Filing Date 2023-07-12
First Publication Date 2024-02-22
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Posseme, Nicolas
  • Landis, Stefan

Abstract

The invention is based on a method for producing an individualisation zone of a chip comprising a component level and a contact level comprising vias, the method comprising the following steps: providing the components level and a dielectric layer, forming a mask on the dielectric layer, etching the dielectric layer through mask openings so as to form openings opening onto the contact zones of the components level, forming fluorinated residue by inputting fluorinated species on at least some contact zones, the openings thus comprising openings with fluorinated residue and openings without residue, filling the openings so as to form the vias of the contact level, said vias comprising functional vias at the openings without residue and altered vias at the openings with residue.

IPC Classes  ?

  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H01L 21/8234 - MIS technology
  • H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns

74.

DEVICE FOR DETECTING OVERFLOW OF CHARGES FOR BACKSIDE ILLUMINATION PIXEL

      
Application Number 18449966
Status Pending
Filing Date 2023-08-15
First Publication Date 2024-02-22
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Ayel, François
  • Saxod, Oliver

Abstract

An image sensor provided with a pixel including a photosensitive region formed in a semiconductor substrate and surrounded by a peripheral isolation trench; a sense node formed on a charge collecting region; a charge transfer gate around the sense node; a well; the pixel being provided with a so-called “detection acceleration” transistor configured to, during a so-called “charge overflow detection” operation, be switched on so as to weaken a potential barrier generated by the transfer gate and thus to favour an overflow of photogenerated charges to the sense node of the photosensitive region and to accelerate detection of this overflow.

IPC Classes  ?

  • H04N 25/707 - Pixels for event detection
  • G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
  • G01S 7/481 - Constructional features, e.g. arrangements of optical elements
  • H04N 25/47 - Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
  • H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

75.

DEVICE AND METHOD FOR MEASURING A NEUTRON ABSORBER IN A FLUID

      
Application Number 18260439
Status Pending
Filing Date 2022-01-03
First Publication Date 2024-02-22
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Sari, Adrien
  • Tabti, Nouhaila

Abstract

A method for determining a concentration of an isotope in a fluid, the isotope absorbing neutrons, the method comprising placing a plurality of neutron detectors at various distances from the fluid; irradiating the fluid by a neutron-emitting source, the latter being placed so that emitted neutrons pass through the fluid before reaching the detectors; measuring, by each detector, a quantity representative of an amount of neutrons reaching the detector; and based on the measurements resulting from the measuring, estimating a concentration of the isotope in the fluid. Further, the estimating step includes taking into account a database containing an estimate of the quantity measured by each detector and based on the database, and on the measurements resulting from the measuring step, estimating the concentration of the isotope in the fluid.

IPC Classes  ?

  • G01N 23/09 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being neutrons
  • G01N 23/02 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material
  • G01N 23/12 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the material being a flowing fluid or a flowing granular solid
  • G01T 7/00 - MEASUREMENT OF NUCLEAR OR X-RADIATION - Details of radiation-measuring instruments
  • G01T 3/00 - Measuring neutron radiation

76.

DETECTION DEVICE USING PIEZORESISTIVE TRANSDUCTION

      
Application Number 18261028
Status Pending
Filing Date 2022-01-11
First Publication Date 2024-02-22
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Jourdan, Guillaume
  • Robert, Philippe

Abstract

A transduction detection device includes a substrate, at least one movable ground relative to the substrate and a suspended stress gauge provided with a piezoresistive element which includes a first anchoring and a second anchoring, different from the first anchoring, relative to the movable ground, wherein it includes at least one thermal dissipator element thermally conductively connected: to a connection portion of the piezoresistive element located outside of the anchorings, and to a thermal discharge part.

IPC Classes  ?

  • G01P 15/12 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by alteration of electrical resistance

77.

INTEGRATION OF A DETECTION CIRCUIT BASED ON OPTICAL RESONATORS ON A READOUT CIRCUIT OF AN IMAGER

      
Application Number 18269277
Status Pending
Filing Date 2021-12-21
First Publication Date 2024-02-22
Owner
  • THALES (France)
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Delga, Alexandre
  • Espiau De Lamaestre, Roch

Abstract

An optoelectronic device includes at least one pixel, each pixel comprising an optical resonator comprising a photodetecting structure confined between a reflective metal layer and a second reflective metal layer; and a readout integrated circuit arranged on a substrate and comprising at least one buried readout electrode dedicated to the pixel and at least one metal or dielectric outer layer. The assembly comprising at least the reflective metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The first metal layer is connected to the readout electrode by way of a metal via passing through the optical resonator structure and the planar assembly structure. The metal via is electrically isolated from the photodetecting structure and from the planar assembly structure.

IPC Classes  ?

78.

CONTROLLED BOBBIN HOLDER FOR A THREAD WINDING UNIT

      
Application Number 18259310
Status Pending
Filing Date 2021-12-24
First Publication Date 2024-02-15
Owner COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Magnier, Christophe
  • Villalonga, Stéphane

Abstract

A device for unwinding a strand from a bobbin, which includes: a plate supporting at least one bobbin holder, which extends along an axis substantially perpendicular to the plate and is intended to receive a bobbin capable of rotating about the axis of the bobbin holder; an element for translationally moving the bobbin along the axis of the bobbin holder; and an element for controlling the movement element and configured so as to maintain the strand leaving the bobbin in a substantially constant position along the axis of the bobbin holder.

IPC Classes  ?

  • B29C 70/38 - Automated lay-up, e.g. using robots, laying filaments according to predetermined patterns
  • B65H 49/32 - Stands or frameworks
  • B29C 70/32 - Shaping by lay-up, i.e. applying fibres, tape or broadsheet on a mould, former or core; Shaping by spray-up, i.e. spraying of fibres on a mould, former or core on a rotating mould, former or core

79.

METHOD AND SYSTEM FOR AUTOMATED FRAUD RISK DETECTION IN A MONITORED SYSTEM

      
Application Number 18259335
Status Pending
Filing Date 2021-12-28
First Publication Date 2024-02-15
Owner Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventor Berdouz Qrichi Aniba, Hakima

Abstract

The invention relates to a method and a system for the automated detection of the risk of fraud in a monitored system, based on data streams generated by said monitored system and characterizing events performed or generated by operators in said monitored system. The method includes: a pre-processing (30-38) of at least one set of data recorded over a period of time, so as to obtain a subset of critical events associated with an operator; the iterative application of a first parameterized estimation process (52,56) for a risk of fraud, so as to obtain a first legitimacy score and a first associated probability of occurrence; the iterative application of a second parameterized estimation process (54,58) for a risk of fraud, so as to obtain a second legitimacy score and a second associated probability of occurrence, and the comparison (60) of the results of said first and second processes, for determining (64) whether said operator is a legitimate operator or a fraudulent operator.

IPC Classes  ?

80.

METHOD FOR DETERMINING A DETECTABLE MINIMUM IMPEDANCE OF A FAULT BY MEANS OF AN ANALYSIS OF A CABLE BY REFLECTOMETRY

      
Application Number EP2023070152
Publication Number 2024/033044
Status In Force
Filing Date 2023-07-20
Publication Date 2024-02-15
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Revault, Louise
  • Cohen, Josy

Abstract

The invention relates to a method for determining a detectable minimum impedance of a fault by means of an analysis of a cable by reflectometry, the method comprising steps of: - carrying out (301) a measurement, referred to as a reflectogram, of the time-domain impulse response of a reference signal propagated through the cable from an injection point then back-propagated to a measurement point, - determining (302) a threshold of detection of amplitude peaks in the reflectogram, the threshold being proportional to the standard deviation of the measurement, - determining (303) an estimate of the attenuation of the signal based on the measurement, the attenuation being considered constant along the cable, - determining (304) an estimate of the coefficient of reflection of the signal from a fault characterized by an amplitude in the reflectogram equal to the detection threshold, based on the attenuation of the signal and on the measurement, - determining (305) an estimate of the characteristic impedance of said fault, equal to the detectable minimum impedance of a fault.

IPC Classes  ?

  • G01R 31/11 - Locating faults in cables, transmission lines, or networks using pulse-reflection methods
  • H04B 3/46 - Monitoring; Testing

81.

POLARIMETRIC IMAGE SENSOR

      
Application Number 18186102
Status Pending
Filing Date 2023-03-17
First Publication Date 2024-02-15
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • STMicroelectronics (Crolles 2) SAS (France)
Inventor
  • Vaillant, Jerome
  • Deneuville, Francois
  • Crocherie, Axel
  • Ostrovsky, Alain

Abstract

The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: —a photosensitive region formed in the semiconductor substrate; —a diffraction structure formed on the side of an illumination surface of the photosensitive region; and —a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region.

IPC Classes  ?

  • G01J 3/447 - Polarisation spectrometry
  • G01J 3/18 - Generating the spectrum; Monochromators using diffraction elements, e.g. grating

82.

CONTACTLESS ELEMENT DETECTION DEVICE

      
Application Number 18254481
Status Pending
Filing Date 2021-11-24
First Publication Date 2024-02-15
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Orefice, Pierre-Henri
  • Hudin, Charles

Abstract

A contactless detection device, comprising a detection surface; a plurality of actuators acoustically coupled to the detection surface; an ultrasonic acoustic wave detector; an electronic and/or IT computer, the device being configured to detect one or more element(s) by repeating the following steps: focusing ultrasonic acoustic waves emitted by the actuators into a focusing region, obtained from waves emitted by the actuators and to which a first time reversal method has been applied, and measuring a duration between emitting the waves and receiving an echo of these waves by the detector, wherein the computer is configured to calculate the control signals such that the detection waves are focused successively into focusing regions of different shape and/or sizes.

IPC Classes  ?

  • G06F 3/043 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
  • G01S 15/87 - Combinations of sonar systems
  • G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
  • G01R 23/02 - Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage

83.

LAYING HEAD FOR A THREAD WINDING UNIT

      
Application Number 18259123
Status Pending
Filing Date 2021-12-24
First Publication Date 2024-02-15
Owner COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Magnier, Christophe
  • Villalonga, Stéphane

Abstract

A depositing head for a plurality of rovings each coming from a bobbin and having a longitudinal axis, the depositing head including a plurality of line roller pairs for rolling the rovings from the bobbins, each roller pair being intended to be associated, in operation, with only a given single roving and including an upstream roller and a downstream roller relative to the direction of unwinding of the rovings, the rollers rotating independently of one another.

IPC Classes  ?

  • B29C 70/32 - Shaping by lay-up, i.e. applying fibres, tape or broadsheet on a mould, former or core; Shaping by spray-up, i.e. spraying of fibres on a mould, former or core on a rotating mould, former or core
  • B29C 70/38 - Automated lay-up, e.g. using robots, laying filaments according to predetermined patterns
  • B29C 70/16 - Fibrous reinforcements only characterised by the structure of fibrous reinforcements using fibres of substantial or continuous length

84.

RADIATION-RESISTANT SILICA-BASED OPTICAL FIBRE

      
Application Number 18266574
Status Pending
Filing Date 2021-11-18
First Publication Date 2024-02-15
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Cheymol, Guy
  • Ladaci, Ayoub

Abstract

A silica optical fiber resistant to radiations includes a core; a sheath surrounding the core; a polymer coating encasing the sheath, the coating being able to form hydrogen by radiolysis under the effect of the radiations so as to diffuse it into the optical fiber. An optical fiber device comprising at least one such radiation-resistant silica optical fiber.

IPC Classes  ?

85.

EXPLOITATION OF LOW DATA DENSITY OR NONZERO WEIGHTS IN A WEIGHTED SUM COMPUTER

      
Application Number 18267070
Status Pending
Filing Date 2021-12-15
First Publication Date 2024-02-15
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor Harrand, Michel

Abstract

A computing circuit for computing a weighted sum of a set of first data using at least one parsimony management circuit includes a first buffer memory for storing all or some of the first data delivered sequentially and a second buffer memory for storing all or some of the second data delivered sequentially. The parsimony management circuit furthermore comprises a first processing circuit able: to analyze the first data in order to search for the first non-zero data and define a first skip indicator between two successive non-zero data, and to control the transfer, to the distribution circuit, of a first datum read from the first data buffer memory on the basis of the first skip indicator. The parsimony management circuit furthermore comprises a second processing circuit able to control the transfer, to the distribution circuit, of a second datum read from the second data buffer memory on the basis of the first skip indicator.

IPC Classes  ?

  • G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

86.

METHOD FOR CONTROLLING AN ACTUATION ASSEMBLY

      
Application Number 18270798
Status Pending
Filing Date 2021-12-16
First Publication Date 2024-02-15
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor Garrec, Philippe

Abstract

Method for controlling an electric actuation assembly (1), the method comprising the following steps: Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; establishing, on the basis of the first characteristic function, the second characteristic function, a magnetic constant of the motor (11) and a reduction ratio of a gearbox (12), and a control correction coefficient; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; establishing, on the basis of the first characteristic function, the second characteristic function, a magnetic constant of the motor (11) and a reduction ratio of a gearbox (12), and a control correction coefficient; controlling the actuation assembly (1) by applying the control correction coefficient.

IPC Classes  ?

  • G05B 19/414 - Structure of the control system, e.g. common controller or multiprocessor systems, interface to servo, programmable interface controller
  • G05B 19/4103 - Digital interpolation

87.

METHOD FOR MULTI-USER CONFIDENTIAL QUERYING OF THE PRESENCE OF A RECORD IN A DATABASE

      
Application Number 18298180
Status Pending
Filing Date 2023-04-10
First Publication Date 2024-02-15
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Boudguiga, Aymen
  • Sirdey, Renaud
  • Stan, Oana
  • Zuber, Martin

Abstract

A method for confidentially querying the presence of a record in a database hosted by a server, the records being stored in the database in the form of digital footprints obtained by hashing a record by a public hash function. The footprints are masked by a stream cipher using a symmetric key of a first user. The first user may grant a second user authorisation to query the database by transmitting the inverse masks of various rows, encrypted by the public key of an additive homomorphic cryptosystem of the second user. The rows of the database are unmasked in the homomorphic domain and the second user transmits an encrypted request to query the base according to a PIR protocol. The second user can decrypt the response from the server using the private key of their homomorphic cryptosystem and determine whether the footprint sought is present in the response thus decrypted.

IPC Classes  ?

  • G06F 16/2457 - Query processing with adaptation to user needs
  • H04L 9/00 - Arrangements for secret or secure communications; Network security protocols
  • G06F 21/31 - User authentication

88.

Method for grinding powders, method for coating a material, metal particles, coated material and uses of these

      
Application Number 18256795
Status Pending
Filing Date 2021-12-08
First Publication Date 2024-02-08
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Brothier, Meryl
  • Vaudez, Stéphane

Abstract

A method for the cryogenic grinding of at least one powder comprising the following steps: (a) introducing a cryogenic fluid into an attrition mill comprising attrition means, (b) introducing the powder or powders into the attrition mill, and (c) setting the attrition mill in rotational motion, and wherein—the ratio VMA/(VMA+VFC) of the volume of the attrition means VMA to the sum of the volume of the attrition means VMA and the volume of the cryogenic fluid VFC is comprised between 0.2 and 0.8, and the rotational speed of the attrition mill during step (c) is between 100 rpm and 20,000 rpm. Further, particles of metal or metal alloy, to the use thereof, to a coating method employing them and to the use of such a coated material.

IPC Classes  ?

  • B02C 17/10 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls with one or a few disintegrating members arranged in the container
  • B02C 17/18 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls - Details
  • B02C 17/20 - Disintegrating members

89.

METHOD FOR PREPARING THIN FILMS, IN PARTICULAR BY MEANS OF THE SOL-GEL PROCESS

      
Application Number 18258854
Status Pending
Filing Date 2021-12-09
First Publication Date 2024-02-08
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Marchand, Julien
  • Bertin, Frédéric
  • Bertussi, Bertrand
  • Belleville, Philippe
  • Valle, Karine
  • Sanchez, Clément

Abstract

A thin film on a surface of a solid substrate, including: a) spraying on the surface: —a colloidal suspension including solid nanoparticles (or colloids) of an inorganic compound dispersed in a solvent to obtain a wet layer of the colloidal suspension on the surface; or —a suspension including an inorganic compound in polymeric form in a solvent, to obtain a wet layer of the suspension of the inorganic compound in polymeric form on the surface; or —a solution or suspension of an organic polymer in a solvent, to obtain a wet layer of the solution or suspension of the organic polymer on the surface; b) drying the wet layer; c) optionally, heat-treating the wet layer that has undergone the drying step, whereby the thin film is obtained; wherein: the solvent comprises at least 95% by weight of water, and the drying is carried out in a static atmosphere.

IPC Classes  ?

  • C09D 5/33 - Radiation-reflecting paints
  • C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
  • C09D 5/02 - Emulsion paints
  • C09D 129/04 - Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
  • C09D 171/02 - Polyalkylene oxides
  • C09D 7/61 - Additives non-macromolecular inorganic
  • C09D 7/20 - Diluents or solvents
  • C09D 7/40 - Additives

90.

Electrochemical Cell with Improved Peripheral Sealing

      
Application Number 18277007
Status Pending
Filing Date 2022-02-15
First Publication Date 2024-02-08
Owner
  • SYMBIO (France)
  • COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Baverel, Christophe
  • Godard, Yannick
  • Poirot-Crouvezier, Jean-Philippe
  • Jacques, Pierre-André

Abstract

The invention relates to an electrochemical cell having: ∘a membrane electrode assembly (2); ∘two retaining plates (10); ∘a single seal (20) extending around the membrane electrode assembly (2) and disposed in contact with the two retaining plates (10); ∘at least one intermediate leaktight sheet (30) extending around the membrane electrode assembly (2), disposed between the latter and the seal (20) and joined in a leaktight manner to the membrane (4) on the one hand and to the seal (20) on the other.

IPC Classes  ?

  • H01M 8/0273 - Sealing or supporting means around electrodes, matrices or membranes with sealing or supporting means in the form of a frame
  • H01M 8/0286 - Processes for forming seals
  • H01M 8/1018 - Polymeric electrolyte materials
  • C25B 9/60 - Constructional parts of cells

91.

SPIN QUBIT ELECTRONIC DEVICE

      
Application Number 18336169
Status Pending
Filing Date 2023-06-16
First Publication Date 2024-02-08
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Baillin, Xavier
  • Fournel, Richard

Abstract

An electronic device includes first and second quantum dots disposed along a direction, first and second control gates associated with said quantum dots, and a magnet configured to generate two opposite spin states at each of the first and second quantum dots. The magnet includes first and second magnetic domains distributed along the direction and separated by a domain wall. The magnetic domains respectively have first and second magnetisations of opposite directions in the direction. The first and second quantum dots thus receive first and second magnetic field gradients.

IPC Classes  ?

  • G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control

92.

ACQUISITION OF DISTANCES FROM A SENSOR TO A SCENE

      
Application Number 18354728
Status Pending
Filing Date 2023-07-19
First Publication Date 2024-02-08
Owner Commissariat à l'Energie Atomique et aux Energies Alternatives (France)
Inventor
  • Segura Puchades, Josep
  • Frey, Laurent
  • Daami, Anis

Abstract

The present description concerns a method of acquisition of distances from a sensor to a scene, comprising a number N of consecutive capture sub-phases Ci, with N an integer greater than or equal to 2 and i an integer index ranging from 1 to N, each sub-phase Ci comprising: supplying a laser beam having an optical frequency (f) linearly varying over a frequency range of width Bi for a time period Ti; delivering, from the laser beam, a reference beam and a useful beam; and illuminating the scene with the useful beam and illuminating at least one pixel row with a superposition of the reference beam and of a reflected beam. An absolute value of a ratio Bi/Ti is different for each capture sub-phase Ci.

IPC Classes  ?

  • G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
  • G01S 7/481 - Constructional features, e.g. arrangements of optical elements
  • G01S 7/4911 - Transmitters

93.

Method for Characterising Biological Particles in Aerosol Form Using Laser-Induced Plasma Spectrometry and Associated System

      
Application Number 18014522
Status Pending
Filing Date 2021-07-09
First Publication Date 2024-02-08
Owner
  • Commissariat a l'Energie Atomique et aux Energies Alternatives (France)
  • Centre National de la Recherche Scientifique (France)
Inventor
  • Sublemontier, Olivier
  • Renault, Jean-Philippe

Abstract

The disclosure relates to a method for characterizing biological particles in aerosol form, such as suspended in an ambient gas, by laser-induced breakdown spectrometry and an associated system.

IPC Classes  ?

  • G01N 15/14 - Electro-optical investigation
  • G01N 33/68 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids

94.

MODIFIED HYALURONIC ACID AS DOPANT FOR PEDOT AND/OR PPRODOT POLYMERS

      
Application Number 18258043
Status Pending
Filing Date 2021-12-16
First Publication Date 2024-02-08
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
  • UNIVERSITE GRENOBLE ALPES (France)
Inventor
  • Leprince, Maxime
  • Auzely, Rachel
  • Texier-Nogues, Isabelle

Abstract

A polymer of hyaluronic acid modified by the grafting thereto of at least one of the functions —SO3− and aromatic rings may be used as dopant for a polymer formed from one or monomers chosen from EDOT, ProDOT, and derivatives thereof. An aqueous suspension, or ink, and materials, in particular hydrogels, based on at least one PEDOT and/or PProDOT polymer may be doped by at least one such modified hyaluronic acid polymer. Such modified hyaluronic acid polymers may be used in bioelectronic or biosensor devices.

IPC Classes  ?

  • C08B 37/08 - Chitin; Chondroitin sulfate; Hyaluronic acid; Derivatives thereof
  • C08J 3/24 - Crosslinking, e.g. vulcanising, of macromolecules
  • C08L 65/00 - Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
  • C09D 11/52 - Electrically conductive inks
  • C09D 11/102 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
  • C08J 3/075 - Macromolecular gels

95.

METHOD FOR CHARACTERISING SPERM CELLS

      
Application Number 18258726
Status Pending
Filing Date 2021-12-20
First Publication Date 2024-02-08
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Allier, Cédric
  • Cioni, Olivier
  • Mandula, Ondrej
  • Camus, Agnès
  • Schmitt, Eric

Abstract

A method for characterizing a mobile particle in a sample includes acquisition of at least one image of the sample during an acquisition period, using an image sensor and formation of a series of images, the series of images comprising at least one image; use of each image of the series of images as input image of a detection convolutional neural network, the detection convolutional neural network being configured to detect the particles and to produce, from each image, an output image on which each detected particle is assigned a distribution of intensity, centered on the particle and extending around the particle; for each detected particle, from each output image, estimation of a position of each detected particle in each image of the series of images; and characterization of each detected particle from the estimation of the position established from each image of the series of images.

IPC Classes  ?

  • G01N 15/14 - Electro-optical investigation
  • G06V 10/44 - Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components

96.

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

      
Application Number 18258784
Status Pending
Filing Date 2021-12-22
First Publication Date 2024-02-08
Owner
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
Inventor
  • Feuillet, Guy
  • Bouchet, Thierry
  • Charles, Matthew
  • Dagher, Roy
  • Zuniga Perez, Jesus

Abstract

A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/872 - Schottky diodes
  • H01L 29/868 - PIN diodes
  • H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
  • H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
  • H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

97.

DEVICE FOR IMPROVING THE PRECISION OF A BIOMAGNETIC IMAGE OF A PATIENT

      
Application Number 18267060
Status Pending
Filing Date 2021-12-08
First Publication Date 2024-02-08
Owner COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor Labyt, Etienne

Abstract

A device for improving the precision of a biomagnetic image of a patient is provided. The device comprises a covering, a plurality of markers and at least five three-axis coils. Three-axis coils and markers of the plurality of markers are placed at the same location on the covering so that, when the covering is positioned on the patient, singular points of the part of the patient can be detected by magnetic resonance imaging and by biomagnetic imaging (MEG, MCG).

IPC Classes  ?

  • A61B 5/243 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetocardiographic [MCG] signals
  • A61B 5/245 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals
  • A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

98.

NANO- OR MICROPARTICLE COMPRISING A POLYVINYL ALCOHOL MATRIX AND DISPERSED THEREIN, FERRITE, METHOD FOR PRODUCING THE SAME AND USES THEREOF

      
Application Number 18361064
Status Pending
Filing Date 2023-07-28
First Publication Date 2024-02-08
Owner COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
  • Poncelet, Olivier
  • Duret, Antonin
  • Jasmin-Lebras, Guénaëlle
  • Deroo, Maïkane
  • Feraudet-Tarisse, Cécile

Abstract

A nano- or microparticle comprising a matrix consisting of or comprising at least one polyvinyl alcohol (PVA) and dispersed therein, ferrite, and a method for producing the same. Further, the use of these nano- or micro-particles for the preparation and the implementation of devices that can be detected by giant magnetoresistance sensors (GMR sensors) as biological diagnostic tools.

IPC Classes  ?

  • A61K 49/18 - Nuclear magnetic resonance (NMR) contrast preparations; Magnetic resonance imaging (MRI) contrast preparations characterised by a special physical form, e.g. emulsions, microcapsules, liposomes

99.

METHOD FOR GENERATING AN EVIDENCE OF THE TIME ELAPSED BETWEEN EVENTS IN AN ASYNCHRONOUS NODE NETWORK

      
Application Number 18363422
Status Pending
Filing Date 2023-08-01
First Publication Date 2024-02-08
Owner COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Hennebert, Christine
  • Paulin, Dylan

Abstract

A method for generating an evidence of the time elapsed between two successive events occurring within a node of an asynchronous network, for example between two transactions emitted by such a node intended to a distributed register (ledger). The node is provided with an embedded system comprising a TPM module generating a control clock, a system clock within a TEE environment and a precision clock. The node verifies the coherence of the clocks by comparing the measurements of the time elapsed between two successive transactions, the measurements having been performed by means of the different clocks. In case of coherence of the measurements, the node emits a transaction proving the elapsed time intended to the distributed register. A verifier node may verify this evidence and certifies that the evidence is verified by emitting a validation transaction to the distributed register.

IPC Classes  ?

  • G06F 1/06 - Clock generators producing several clock signals
  • H04L 9/40 - Network security protocols

100.

NEUROMORPHIC CIRCUIT FOR PHYSICALLY PRODUCING A NEURAL NETWORK AND ASSOCIATED PRODUCTION AND INFERENCE METHOD

      
Application Number EP2023071366
Publication Number 2024/028371
Status In Force
Filing Date 2023-08-02
Publication Date 2024-02-08
Owner
  • THALES (France)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
  • UNIVERSITE PARIS-SACLAY (France)
  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
  • Bortolotti, Paolo
  • Anane, Abdelmadjid
  • Cros, Vincent
  • Kim, Joo-Von
  • De Loubens, Grégoire
  • De Rossi, Alfredo

Abstract

The invention relates to a neuromorphic circuit (10) for physically producing a neural network. The neuromorphic circuit (10) comprises: - at least one component (26) that is capable of being excited according to a plurality of excitation eigenmodes with a respective population and of having a plurality of excitation configurations, - a unit (28) for configuring the component (26) capable of exciting the component (26) in order to obtain an excitation configuration chosen on the basis of a desired neural network architecture, and - a unit (30) for interrogating the component (26) capable of selectively modifying the populations of first excitation eigenmodes and of measuring the populations of second excitation eigenmodes, the first and second excitation eigenmodes being the excitation modes of the input neurons and the output neurons of the desired architecture, respectively.

IPC Classes  ?

  • G06N 3/067 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using optical means
  • G06N 3/065 - Analogue means
  • G06N 3/084 - Backpropagation, e.g. using gradient descent
  • G06N 3/049 - Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs
  • H01F 10/13 - Amorphous metallic alloys, e.g. glassy metals
  • G02F 3/00 - Optical logic elements; Optical bistable devices
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