A system and method for assembly. In some embodiments, the method includes: optically aligning a transfer stamp with a platform wafer, the transfer stamp including a device coupon for bonding to the platform wafer, the device coupon including a device coupon photonic device; applying a lateral force to the transfer stamp, such that a lateral surface of the device coupon engages with a mechanical alignment feature located in the platform wafer and such that the device coupon is aligned relative to the platform wafer; and applying a bonding force to the transfer stamp, such that the device coupon bonds to the platform wafer.
A multi-module wearable device. According to an embodiment of the present disclosure, there is provided a system, including: a first wearable instrument; a second wearable instrument including a biometric sensor; an electrical connection between the first wearable instrument and the second wearable instrument; and a strap, sized and dimensioned to be disposed about a wrist. The electrical connection may be capable of connecting the first wearable instrument to the second wearable instrument when the second wearable instrument is at a first position on the strap relative to the first wearable instrument, and of connecting the first wearable instrument to the second wearable instrument when the second wearable instrument is at a second position on the strap relative to the first wearable instrument.
A system for sensing one or more biometrics. In some embodiments, the system includes a first wearable instrument; a second wearable instrument including a biometric sensor; a conductive connection between the first wearable instrument and the second wearable instrument; and a strap, sized and dimensioned to be disposed about a wrist. The system may be capable of securing the first wearable instrument to the strap, of securing the second wearable instrument to the strap at a first position relative to the first wearable instrument, and of securing the second wearable instrument to the strap at a second position relative to the first wearable instrument.
A61B 5/021 - Measuring pressure in heart or blood vessels
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A wearable device. In some embodiments, a system includes a wearable device configured to be worn against the skin of a subject, including: a transmitting window; a light source for generating light for transmission through the transmitting window; a receiving window; a photodetector configured to detect light received through the receiving window; and an opaque barrier, an edge of the transmitting window being separated from an edge of the receiving window by a gap having a width of less than 2 mm, and the opaque barrier being in the gap.
A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.
A system and method for calibrating speckle-based sensor. In some embodiments, the system includes a wearable device including: a laser, an array detector; and a processing circuit, the processing circuit being configured to: obtain a calibration of the array detector, using an incoherent light source; obtain a speckle image, using the laser; and calculate a corrected speckle-based measurement, the corrected speckle-based measurement being based on the speckle image and on the calibration.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
Dialysis patients may be affected by renal failure and may be affected by other health conditions, such as hypertension. During and between dialysis sessions, it may be advantageous to monitor various characteristics of the patient and of the dialysis system. As such, a system and method for dialysis biomarker monitoring is provided.
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A61M 1/36 - Other treatment of blood in a by-pass of the natural circulatory system, e.g. temperature adaptation, irradiation
An optical sensor for spectroscopic analysis of a sample, the optical sensor comprising: a photonic integrated chip (PIC) for providing light to the sample, the PIC comprising: one or more laser(s) designed to operate at one or more respective predetermined wavelength(s), each of the one or more laser(s) having an output that is optically coupled to an optical output of the PIC; and a monitor located on the PIC for determining the wavelength of the optical output; the optical sensor further comprising: a detector for collecting a spectrum from the sample; and one or more processors configured to: compare the wavelength of the laser(s) at the optical output with each of their respective predetermined wavelength(s); and if a deviation above a certain threshold is detected between the wavelength of the laser(s) and the predetermined wavelength(s), adapt the collected spectrum to generate a reconstructed spectrum; and use one or more datapoints from the reconstructed spectrum for the spectroscopic analysis.
An optical sensor module for measuring both speckleplethysmography (SPG) and photoplethysmography (PPG) signals at human or animal tissue, the optical sensor module comprising:a first light source, for illuminating the tissue for use with SPG measurements, the first light source comprising a laser; a second light source, for illuminating the tissue for use with PPG measurements; and one or more optical sensor(s) for receiving light from the illuminated tissue.
A61B 5/0295 - Measuring blood flow using plethysmography, i.e. measuring the variations in the volume of a body part as modified by the circulation of blood therethrough, e.g. impedance plethysmography
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A system, comprising: a laser (105) for producing laser light; a photodetector (115) for detecting the laser light after interaction of the laser light with a sample (110); and a silicon deformable membrane (205), for modulating the phase of the laser light.
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 21/49 - Scattering, i.e. diffuse reflection within a body or fluid
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The invention refers to a photonic integrated circuit or PIC, the photonic integrated circuit (28) comprising: at least one laser (30), the laser having a laser output (44), a measuring portion (32) including a measuring port (60) and configured to measure an intensity and/or wavelength of light input at the measuring port, and an output portion (34) configured to output light from the photonic integrated circuit to the portion of the tissue, wherein optionally the laser includes a ring resonator laser, a laser generating light having a fixed wavelength, a laser being constructed using hybrid integration, and/or a tunable laser.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
G02B 6/42 - Coupling light guides with opto-electronic elements
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
A computer-implemented method for deriving a physiological rank indicative of a physiological status of a user, the computer-implemented method comprising acquiring, from a sensor on a wearable device worn by a user, data including bodily parameter data related to the user, and applying a model to the bodily parameter data to obtain physiological information related to the user, and deriving, from the physiological information, a physiological rank indicative of a physiological status of the user wearing the device, wherein the physiological rank is a given value on a physiological rank scale.
G16H 50/30 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for individual health risk assessment
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 5/0205 - Simultaneously evaluating both cardiovascular conditions and different types of body conditions, e.g. heart and respiratory condition
A laser (10)comprising a photonic component (14) comprising a gain medium; and a waveguide platform (12) comprising a Distributed Bragg Reflector, DBR, section (18). The photonic component is optically coupled to the waveguide platform. One or more thermal heaters (28) are positioned at the DBR section (18) of the waveguide platform, and/or at a phase section (16) of the waveguide platform located between the gain medium and the DBR section.
A source wafer for use in a micro-transfer printing process. The source wafer comprising: a wafer substrate; a photonic component, provided in a device coupon, the device coupon being attached to the wafer substrate via a release layer; and one or more etch stop layers, located between the photonic component and the wafer substrate.
A sensor. In some embodiments, the sensor includes a first waveguide, a flexible support element, and a second waveguide. A first portion of the first waveguide may be supported by the flexible support element and separated by a first gap from a second portion of the first waveguide. The flexible support element may be capable of bending so as to cause an effective index of refraction of the first waveguide to change. The first waveguide may be coupled to the second waveguide through a second gap, the second gap being at an end of the first waveguide and an end of the second waveguide.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G01L 11/02 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or by optical means
G01L 23/16 - Devices or apparatus for measuring or indicating or recording rapid changes, such as oscillations, in the pressure of steam, gas, or liquid; Indicators for determining work or energy of steam, internal-combustion, or other fluid-pressure engines from the condition of the working fluid operated electrically by photoelectric means
A method for determining a calibration function includes: calculating a first distance, between a distribution of target spectra and a comparison distribution of spectra; calibrating the distribution of target spectra with a first preliminary calibration function to form a first distribution of calibrated target spectra; calculating a second distance, between the first distribution of calibrated target spectra and the comparison distribution of spectra; determining that the second distance is less than the first distance; and setting the calibration function equal to the first preliminary calibration function.
A computer-implemented method to improve the accuracy of a calculation of a biomarker value from a spectral measurement. The computer-implemented method comprises receiving a primary spectral measurement from a primary detector, receiving, a secondary measurement from a secondary detector, and calculating a value of the biomarker using a biomarker algorithm. The biomarker algorithm takes an input from the primary spectral measurement and a calibration parameter from the secondary measurement.
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a lll-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the lll-V semiconductor-based optoelectronic component.
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
An optical speckle receiver for receiving a speckle signal from a sample, the optical speckle receiver comprising an optical detector and an aperture and/or lens array. The aperture and array respectively comprise a plurality of apertures or lenses and is located between the sample and the optical detector such that the received speckle pattern is obtained from multiple discrete sample locations.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A system and method for health state estimation. In some embodiments, the method includes receiving a first measurement of a subject, the first measurement being a first tissue spectrum of the subject; and generating, using a machine learning inference process based on the first measurement, an estimate of an aspect of the health state of the subject.
G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems
G16H 50/30 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for individual health risk assessment
The present invention provides a photodiode for a wearable sensor system, the photodiode having a rectangular active area sensitive to wavelengths within the spectral range of 1200 nm to 2400 nm. The present invention also provides a wearable sensor system comprising the photodiode.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
G02B 6/42 - Coupling light guides with opto-electronic elements
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
22.
SYSTEM AND METHOD FOR POSITIONING A SENSOR ON A SUBJECT
A system and method for positioning a sensor on a subject. In some embodiments, the system includes an instrument holder, the instrument holder being configured to be secured to a subject, and to hold an instrument temporarily.
A photonic integrated device comprising: a photonic integrated chip (PIC) adapted to investigate blood flow at a portion of tissue of a user, said PIC comprising: a laser having an optical output, or waveguide for guiding an optical output from an external laser, the optical output being split into a first optical component and a second optical component; wherein the first optical component is arranged to be transmitted to and generate speckle at the portion of tissue of the user; the photonic integrated device further comprising: one or more detectors, each detector configured to receive the speckle generated by the first optical component at the portion of tissue; and one or more optical splitters optically coupling the second optical component to one or more respective input(s) of the one or more detectors; wherein the photonic integrated device is further adapted to measure interference at the one or more detectors between a sample arm formed by the first optical component and a reference arm formed by the second optical component.
A61B 5/0295 - Measuring blood flow using plethysmography, i.e. measuring the variations in the volume of a body part as modified by the circulation of blood therethrough, e.g. impedance plethysmography
A transmitter photonic integrated circuit (PIC) for generating an optical signal for optical spectroscopy of a surface, the transmitter PIC comprising: One or more coherent light source(s); a homogenizer, the homogenizer comprising a planar waveguide device and/or an optical phased array (OP A) which receives light from the coherent light source(s) and generates interference to produce multiple statistically uncorrelated speckle patterns that are combined to provide the optical output.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/28 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
A method of preparing a distributed feedback laser. The distributed feedback laser comprises an active waveguide with a reflective facet. The method comprises: etching a grating into the distributed feedback laser; and etching an output facet into the active waveguide.
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/32 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
An optical waveguide structure. In some embodiments, the optical waveguide structure includes a semiconductor waveguide having a waveguide ridge, and a heater. The waveguide ridge may have a varying dopant concentration across its cross-section. The heater may include a first contact and a second contact, and the waveguide structure may include a conductive path from the first contact to the second contact, the conductive path extending through a doped portion of the waveguide ridge.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
H01S 5/187 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
G02F 1/335 - Acousto-optical deflection devices having an optical waveguide structure
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
A tapered waveguide. In some embodiments, the waveguide has a narrow end and a wide end. A taper angle of the waveguide may be, at each point along the waveguide, less than an adiabatic taper angle by a margin. The margin may be greater at a first point than at a second point, where the adiabatic taper angle is less at the first point than at the second point.
A photonic integrated circuit. In some embodiments, the photonic integrated circuit includes: a waveguide; and a waveguide facet, a first end of the waveguide being at the waveguide facet, a first angle being an angle between: the waveguide at the first end of the waveguide and the normal to the waveguide facet, the first angle being at least 5 degrees, a first section of the waveguide having a first end at the waveguide facet and a second end, the first section having: a curvature of less than 0.01/mm at the first end of the first section, a curvature of less than 0.01/mm at the second end of the first section, and a curvature of at least 0.1/mm at a point between the first end and the second end.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/32 - Optical coupling means having lens focusing means
A waveguide mode filter. In some embodiments, the waveguide mode filter includes a first section of waveguide. The first section may have: a first end; a second end; a rate of change of curvature having a magnitude not exceeding 15/mm2 within the first section; a curvature having a magnitude of at most 0.03/mm at the first end; and a curvature having a magnitude of at least 0.1/mm at the second end.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A method of transfer printing. The method comprising: providing a precursor photonic device (200), comprising a substrate (210) and a bonding region, wherein the precursor photonic device (200) includes one or more alignment marks (101, 102, 103, 104) located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks (101); aligning the one or more alignment marks (102) of the precursor photonic device (200) with the one or more alignment marks (102) of the transfer die; and bonding at least a part of the transfer die to the bonding region.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
A system comprising: a first module comprising a first sensor, capable of performing biometric sensing at a first location on a patient; and a second module comprising a second sensor, capable of performing biometric sensing at a second location on the patient. The first module comprises a transmitter for transmitting first sensor data, the first sensor data comprising sensing information obtained by the first sensor.
An optical assembly (100) for use in a wearable device is provided, the assembly (100) comprising: a prism (104), a photonic integrated chip, PIC (108), a substrate layer (106), and a lid (102); wherein the PIC (108) is mounted onto the substrate layer (106); the prism (104) comprising: (i) a first input/output surface (112) optically coupled to the PIC (108), and (ii) a second input/output surface (114) optically coupled to the lid (102), the second input/output surface (114) orientated perpendicularly to the first input/output surface (112), and wherein the prism (104) provides an optical path and reflects a percentage of light from the first input/output surface (112) to the second input/output surface (114). Methods of manufacturing such an optical assembly are also provided.
A minimally invasive spectrophotometric system. In some embodiments, the system includes a minimally invasive device and a spectrophotometer. The spectrophotometer may include: a transmitting fiber, a receiving fiber, and a head. The head of the spectrophotometer may include: a light source connected to the transmitting fiber and a photodetector connected to the receiving fiber. A portion of the transmitting fiber may be in an insertion tube of the minimally invasive device, and a portion of the receiving fiber may be in the insertion tube of the minimally invasive device. The head of the spectrophotometer may occupy a volume of less than 300 cubic centimeters.
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 1/00 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
A61B 10/00 - Other methods or instruments for diagnosis, e.g. for vaccination diagnosis; Sex determination; Ovulation-period determination; Throat striking implements
A system and method for alignment. In some embodiments, the method includes measuring a first offset, the first offset being an offset along a first direction between a first alignment mark and a second alignment mark, the first alignment mark being an alignment mark on a first edge of a source die, the second alignment mark being an alignment mark on a target wafer, and the first direction being substantially parallel to the first edge of the source die.
A wafer with a buried V-groove cavity, and a method for fabricating V-grooves. In some embodiments, the method includes bonding a first layer, to a top surface of a substrate, to form a composite wafer, the first layer being composed of a first semiconductor material, the substrate being composed of a second semiconductor material, the top surface of the substrate having a cavity, the cavity including a V-groove.
A photonic integrated circuit for use in hyperspectral spectroscopy. The photonic integrated circuit comprising: a multi-spectral laser source, configured to produce a multi-spectral optical signal; a modulator, the modulator configured to split the multi-spectral optical signal into a first component and a second component, and apply an up-chirp modulation profile to the first component and a down-chirp modulation profile to the second component; a first transmitter and receiver module, configured to transmit the modulated first component and receive reflections of the first component; and a second transmitter and receiver module, configured to transmit the modulated second component and receive reflections of the second component.
G01B 9/02004 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
A coupon wafer for a micro-transfer printing process. The coupon wafer including a device coupon attached to a substrate of the coupon wafer by one or more tethers; wherein the or each tether is a pillar extending at least partially through the device coupon to contact the substrate of the coupon wafer.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
G02B 6/00 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
An optical sensing module suitable for a gas phase sample, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: one or more lasers, each laser of the one or more lasers operating at a wavelength that is different from the wavelength of the others; one or more optical outputs for light originating from the one or more lasers, the optical output arranged such that the light interacts with the gas-phase sample; and one or more photodetectors configured to detect light after interaction with the gas-phase sample.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02B 6/00 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 5/08 - Measuring devices for evaluating the respiratory organs
G01N 33/497 - Physical analysis of biological material of gaseous biological material, e.g. breath
A61B 5/083 - Measuring rate of metabolism by using breath test, e.g. measuring rate of oxygen consumption
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
G01N 21/39 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
A method of testing one or more optoelectronic devices located on respective device coupons. The device coupon(s) are present on a wafer. The method comprises: testing the or each optoelectronic device using a corresponding testing element, the testing element(s) being located on the same wafer as the device coupon(s), by either: in a first testing protocol, operating the optoelectronic device so as to produce an optical output, and detecting the light incident on the testing element from the optoelectronic device under test, or in a second testing protocol, detecting, by the optoelectronic device under test, the light received from the testing element.
A waveguide structure. In some embodiments, the waveguide structure, includes: a first waveguide (105), a second waveguide (120), and a third waveguide (125) on a substrate (115). The first waveguide (105) may be at a different height than the second waveguide (120). The waveguides may be configured to cause light to couple between the first waveguide (105) and the second waveguide (120), and between the second waveguide (120) and the third waveguide (125). The first, second, and third waveguides (105, 120, 125) may be composed of respective materials having a first index of refraction, a second index of refraction, and a third index of refraction respectively. The third material may include silicon and nitrogen. The second index of refraction may be greater than the first index of refraction, and less than the third index of refraction.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
G02B 6/132 - Integrated optical circuits characterised by the manufacturing method by deposition of thin films
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
G02B 6/30 - Optical coupling means for use between fibre and thin-film device
A sensor system for diffuse reflectance tissue monitoring, the sensor system comprising: one or more integrated photonic silicon or silicon nitride broadband transceiver circuits for multi-wavelength diffuse reflectance tissue monitoring, wherein the one or more transceiver circuits includes a transmitter photonic integrated circuit (PIC), the transmitter PIC comprising an optical phased array (OP A) the OP A comprising a steering mechanism to steer transmitted light across the tissue.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
43.
METHOD OF PREPARING A DEVICE COUPON FOR MICRO-TRANSFER PRINTING, DEVICE WAFER INCLUDING SAID DEVICE COUPON, AND OPTOELECTRONIC DEVICE MANUFACTURED FROM SAID DEVICE WAFER
A method of preparing a device coupon for a micro-transfer printing process from a multi-layered stack located on a device wafer substrate. The multi-layered stack comprises a plurality of semiconductor layers. The method comprises steps of: (a) etching the multi-layered stack to form a multi-layered device coupon, including an optical component; and (b) etching a semiconductor layer of the multi-layered device coupon to form one or more tethers, said tethers securing the multi-layered device coupon to one or more supports.
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
44.
OPTOELECTRONIC DEVICE AND METHOD OF PREPARATION THEREOF
An optoelectronic device. The optoelectronic device comprising: a plurality of waveguide ridges provided in an array, each waveguide ridge extending away from a semiconductor bed; a plurality of upper contacts, each electrically connected to an upper surface of a respective waveguide ridge, said upper surface being located distal from the semiconductor bed; and a plurality of lower contacts, each located between a respective pair of waveguide ridges and electrically connected to the semiconductor bed.
An optoelectronic device. The device comprises: a silicon-on-insulator platform, including a silicon waveguide, formed in a silicon device layer, a silicon substrate, and a cavity; a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor based device and the substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
A splitter. In some embodiments, the splitter includes an input waveguide; a first output waveguide; a second output waveguide; a first internal waveguide, connected to the input waveguide and to the first output waveguide, and a second internal waveguide, coupled to the first internal waveguide and connected to the second output waveguide. The splitter may be configured, when fed, at the input waveguide, power in a fundamental mode of the input waveguide or power in a first order spatial mode of the input waveguide: to transmit at least 80% of the power in the fundamental mode to the first output waveguide, and to transmit at least 80% of the power in the first order spatial mode to the second output waveguide.
G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
A coupon wafer comprising a device coupon (110) for use in a micro- transfer printing process used to fabricate an optoelectronic device. The coupon wafer includes a wafer substrate (124), and the device coupon (110) is attached to the wafer substrate via a tether (122) and the tether (122) is formed from a dielectric material.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
An integrated switch assembly having a stacked configuration, the integrated switch assembly comprising: a first layer, the first layer comprising a photonic integrated circuit, PIC; a second layer, the second layer comprising a switch ASIC; wherein the first layer is mounted onto a substrate and the second layer is mounted on top of the first layer.
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
A method of manufacturing a transfer die. The manufactured transfer die comprises a semiconductor device suitable for bonding to a silicon-on-insulator wafer. The method comprises the steps of providing a non-conductive isolation region in a semiconductor stack, the semiconductor stack comprising a sacrificial layer above a substrate; and etching an isolation trench into the semiconductor stack from an upper surface thereof, such that the isolation trench extends only to a region of the semiconductor stack above the sacrificial layer. The isolation trench and the non-conductive isolation region together separate a bond pad from a waveguide region in the optoelectronic device.
A waveguide platform and method of fabricating a waveguide platform on a silicon wafer; the method comprising: providing a wafer having a layer of crystalline silicon; lithographically defining a first region of the top layer; electrochemically etching the waveguide platform to create porous silicon at the lithographically defined first region; epitaxially growing crystalline silicon on top of the porous silicon to create a first upper crystalline layer with a first buried porous silicon region underneath; wherein the first buried porous silicon region defines a taper between a first waveguide region of crystalline silicon having a first depth and a second waveguide region of crystalline silicon having a second depth which is smaller than the first depth.
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A photonic module, comprising a first waveguide; a second waveguide, disposed on an opposing side of the first waveguide to a substrate; and, a coupling section. One of the first waveguide and the second waveguide is formed of crystalline silicon. The other of the first waveguide and the second waveguide is formed of amorphous silicon. The coupling section is configured to couple light between the first waveguide and the second waveguide. Such a silicon photonic module has enhanced coupling and transmission properties in contrast to conventional modules.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
A demultiplexer for use in a wavelength division multiplexed system. The demultiplexer comprises: an input waveguide, configured to receive a wavelength division multiplexed signal; a demultiplexing element, configured to demultiplex the multiplexed signal received from the input waveguide into a plurality of multi-mode demultiplexed signal components; a multi-mode output waveguide, the multi-mode output waveguide being coupled to the demultiplexing element and configured to receive one of the multi-mode demultiplexed signal components; and a splitter, coupled to the multi-mode output waveguide, and configured to split the received multi-mode demultiplexed signal component into two single-mode outputs.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
A source wafer for use in a micro-transfer printing process. The source wafer comprises: a substrate; a device coupon (110), including an optoelectronic device; and a breakable tether securing the device coupon to the substrate. The breakable tether includes one or more breaking regions which connect the breakable tether to the substrate.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
54.
PACKAGING OF THREE-DIMENSIONAL INTEGRATED CIRCUIT BY ENCAPSULATION WITH COPPER POSTS AND DOUBLE SIDED REDISTRIBUTION LAYER
A semiconductor package. In some embodiments, the package has a top surface and a bottom surface, and includes: a semiconductor die having a front surface, a back surface, and a plurality of edges; a mold compound, on the back surface of the die and the edges of the die; a plurality of first conductive elements extending through the mold compound on the back surface of the die to the top surface of the package; and a plurality of second conductive elements on the bottom surface of the package.
The invention refers to an optical device for heterodyne interferometry, comprising a chip, a beam splitter, a first waveguide arranged on the chip, light propagating in the first waveguide being guided to the beam splitter, a second waveguide arranged on the chip, light propagating in the second waveguide being guided to and/or from the beam splitter, wherein the beam splitter, the first waveguide, and the second waveguide form part of a Michelson interferometer, wherein the first waveguide and the second waveguide at least partially form two arms of the Michelson interferometer, and wherein two further arms of the Michelson interferometer are at least partially arranged outside the chip.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02B 6/00 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
A semiconductor device. In some embodiments, the semiconductor device includes: a first layer having a first region and a second region, the first region being corrugated with a plurality of corrugations, the second region being uncorrugated. A first cycle of the corrugations may have a first duty cycle and a second cycle of the corrugations may have a second duty cycle, the second cycle being between the first cycle and the second region, and the second duty cycle being between the first duty cycle and the duty cycle of the second region.
The invention refers to a frequency shifter for heterodyne interferometry measurements, comprising a chip, an input waveguide configured to guide a light beam, at least four phase modulators, each being arranged to receive the light beam from the input waveguide and configured to modulate a phase of the light beam, an output combiner being arranged to let the light beams modulated by each phase modulator interfere, a first output waveguide coupled to the output combiner and configured to receive the modulated light beams constructively interfering at the output combiner, a second output waveguide coupled to the output combiner and configured to receive the modulated light beams destructively interfering at the output combiner, wherein the input waveguide, the phase modulators, the output combiner, the first output waveguide and the second output waveguide are arranged on the chip.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
59.
INTEGRATED III-V / SILICON OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF
An optoelectronic device. The optoelectronic device comprising: a silicon-on-insulator platform, including: a silicon waveguide located within a silicon device layer of the platform, a substrate, and an insulator layer between the substrate and the silicon device layer; and a III-V semiconductor based device, located within a cavity of the silicon-on-insulator platform and including a III-V semiconductor based waveguide, coupled to the silicon waveguide; wherein the III-V semiconductor based device includes a heater and one or more electrical traces, connected to the heater, wherein the one or more electrical traces extend from the III-V semiconductor based device to respective contact pads on the silicon-on-insulator platform.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
60.
OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF
A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the lll-V semiconductor based photonic component to the silicon waveguide.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
An optical multiplexer. The optical multiplexer comprising: a plurality of input waveguides, each comprising an input slab portion and an input rib portion; an output waveguide, comprising an output slab portion and output rib portion; and a wavelength multiplexer element, coupled to each input waveguide and the output waveguide, the wavelength multiplexer element comprising a slab waveguide which includes a grating configured to multiplex signals of differing wavelengths, received from the input waveguides, into a multiplexed signal, and provide the multiplexed signal to the output waveguide. The input rib portion(s) of one or more of the input waveguides are tapered so as to decrease in width in a direction towards the slab waveguide of the wavelength multiplexer element which is an echelle grating or an arrayed waveguide grating.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
62.
OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF
An optoelectronic device (100). The device (100) comprising: a silicon-on-insulator, SOI, wafer (120), the SOI wafer including a cavity (126) and an input waveguide (116), the input waveguide (116) being optically coupled into the cavity (126); and a mirror (110), located within the cavity (126) and bonded (128) to a bed thereof, the mirror (110) including a reflector (114) configured to reflect light (124) received from the input waveguide (116) in the SOI wafer (120).
An optoelectronic device comprising an optical waveguide formed in a silicon device layer of a silicon-on-insulator wafer. The optical waveguide including a semiconductor junction comprising a first doped region of semiconductor material and a second doped region of semiconductor material. The second doped region containing dopants of a different species to the first doped region. A first portion of the first doped region extends horizontally on top of the second doped region, a second portion of the first doped region extends vertically along a lateral side of the second doped region and a third portion of the first doped region protrudes as a salient from the first or second portion of the first doped region into the second doped region.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
A siliconized heterogeneous optical engine. In some embodiments, the siliconized heterogeneous optical engine includes a photonic integrated circuit; an electro-optical chip, on a top surface of the photonic integrated circuit; an electronic integrated circuit, on the top surface of the photonic integrated circuit; an interposer, on the top surface of the photonic integrated circuit; a redistribution layer, on a top surface of the interposer, the redistribution layer including a plurality of conductive traces; and a plurality of protruding conductors, on the conductive traces of the redistribution layer. The electronic integrated circuit may be electrically connected to the electro-optical chip and to a conductive trace of the plurality of conductive traces of the redistribution layer.
An optical ring modulator for use as a PAM-N modulator, the optical ring modulator comprising: a first optical waveguide which forms a bus waveguide; a ring waveguide optically coupled to the bus waveguide; wherein, the ring waveguide comprises: a first electrode region having a first pn junction or first Moscap, the first pn junction or first Moscap configured to generate a first phase shift upon application of a given voltage across the first pn junction or first Moscap; and a second electrode region having a second pn junction or second Moscap, the second pn junction or second Moscap configured to generate a second phase shift when the given voltage is applied across the second pn junction or second Moscap, wherein the second phase shift is less than the first phase shift.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
An electro-optical modulator. The electro-optical modulator comprising: an input waveguide, configured to guide light into a modulation region of the electro-optical modulator; a plurality of sub-modulators, within the modulation region, each sub-modulator having a transfer function between an applied voltage and an optical phase shift; and an output waveguide, configured to guide light out of the modulation region. The combination of the transfer functions of each sub-modulator is such that a total transfer function between an applied voltage and an optical phase shift of the modulation region is substantially linear over a range of operating voltages.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
67.
OPTICAL MODULATOR AND METHOD OF FABRICATING AN OPTICAL MODULATOR
A MOS capacitor-type optical modulator comprising a silicon-on-insulator (SOI) substrate, a first doped region in a silicon device layer of the SOI substrate, and a second doped region laterally separated from the first doped region by a vertically extending insulator layer to form a lateral MOS capacitor region. The first doped region, second doped region and insulator layer are formed from different materials.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region; wherein the relative separation of the first active region and the second active region within the multistack epi layer is chosen based on the difference in depth of the first cavity region and the second cavity region, such that after the simultaneous deposition step, the first active region within in the first cavity region lies at the same level of the optoelectronic device as the second active region within the second cavity region and at the same level as the SOI device layer.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
An optical modulator. The optical modulator comprising: a micro-ring resonator; and a bus waveguide, including an input waveguide region, an output waveguide region, and a coupling waveguide region optically coupled to the micro-ring resonator and located between the input waveguide region and the output waveguide region. The micro-ring resonator includes a modulation region, the modulation region being formed of a silicon portion and a III-V semiconductor portion separated by a crystalline rare earth oxide dielectric layer.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
70.
METHOD OF MANUFACTURING A III-V BASED OPTOELECTRONIC DEVICE ON A SILICON-ON-INSULATOR WAFER
A method of manufacturing a III-V based optoelectronic device on a silicon-on-insulator wafer. The silicon-on-insulator wafer comprises a silicon device layer, a substrate, and an insulator layer between the substrate and silicon device layer. The method includes the steps of: providing a device coupon, the device coupon being formed of a plurality of III-V based layers; providing the silicon-on-insulator wafer, the wafer including a cavity with a bonding region; transfer printing the device coupon into the cavity, and bonding a layer of the device coupon to the bonding region, such that a channel is left around one or more lateral sides of the device coupon; filling the channel with a bridge-waveguide material; and performing one or more etching steps on the device coupon, silicon-on-insulator wafer, and/or channel to provide a III-V semiconductor based waveguide in the device coupon, one or more bridge-waveguides in the channel, and a silicon waveguide in the silicon-on-insulator wafer.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
H01S 5/02 - Structural details or components not essential to laser action
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
71.
FACEPLATE PLUGGABLE REMOTE LASER SOURCE AND SYSTEM INCORPORATING SAME
A faceplate pluggable remote laser source and system incorporating such a laser source. The system may include an enclosure having a faceplate; a first optical connector, in the faceplate; a laser module; and a loopback fiber cable, connected between the laser module and the first optical connector. The faceplate may form an exterior boundary of the enclosure. The laser module may have a first end including an electrical interface, and a second end including an optical interface. The first end of the laser module may be engaged in a receptacle in the faceplate, and the second end of the laser module may extend outside the faceplate. The laser module may be configured to receive electrical power through the electrical interface, and to produce unmodulated light at the optical interface. The loopback fiber cable and the first optical connector may be configured to route the unmodulated light back into the enclosure.
A metal-oxide semiconductor capacitor, MOSCAP, based electro-optic modulator. The modulator comprising: an input waveguide; a modulating region, coupled to the input waveguide; and an output waveguide, coupled to the modulating region. The modulating region includes an n-i-p-n junction, the n-i-p-n junction comprising: a first n doped region, spaced from a p doped region by an intrinsic region, and a second n doped region, separated from the intrinsic region by the p doped region and on an opposing side of the intrinsic region to the first n doped region.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
A via frame. In some embodiments, the via frame includes: a sheet of epoxy mold compound, having a plurality of holes each extending through the sheet of epoxy mold compound, and a plurality of conductive elements, each extending through a respective one of the holes.
H01L 23/482 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body
A silicon interposer (100). The silicon interposer (100) including: a silicon layer, (101) including one or more optical waveguides (102) each connectable to an optical fiber (103); an optically active component (104), configured to convert optical signals received from the optical fiber (103) into electrical signals or to convert electrical signals into optical signals and provide them to the optical fiber (103); and one or more electrical interconnects (105), connected to the optically active component (104) and connectable to a printed circuit board, a separate die, a separate substrate, or a wafer level package.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
75.
SILICON PHOTONIC INTERPOSER WITH TWO METAL REDISTRIBUTION LAYERS
A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An optical isolator on a silicon photonic integrated circuit. The optical isolator comprising: a polarization splitter; a polarization rotator; and a Faraday rotator. The Faraday rotator comprises: one or more magnets providing a magnetic field; and a silicon spiral delay line. The silicon spiral delay line being formed from a silicon waveguide shaped into a spiral region having no built-in phase shifters and a central region within the spiral region. The central region having no more than a total of 180 degree of phase shifters.
G02F 1/09 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
An assembly. In some embodiments, the assembly includes: a photonic integrated circuit (PIC, 105); and an electronic integrated circuit (IC, 110). A front surface of the photonic integrated circuit abuts, in an area of overlap (135), against a front surface of the electronic integrated circuit. A first portion (125) of the photonic integrated circuit overhangs a first edge (130) of the electronic integrated circuit, and a first portion (115) of the electronic integrated circuit overhangs a first edge (120) of the photonic integrated circuit. A conductor on the front surface of the electronic integrated circuit is connected, in the area of overlap, to a conductor on the front surface of the photonic integrated circuit.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
A light ranging and detection system achieving reconfigurable very wide field of view, high sampling of spatial points per second with high optical power handling by using architecture to efficiently combine different wavelengths, time and frequency coding, and spatial selectivity. The transmitter is capable of generating multiple narrow beams, encoding different beams and transmitting in different spatial directions. The receiver can differentiate and extract range and reflectivity information of reflected beams. Three dimensional imaging of the environment is achieved by scanning the field of view of the transmitter. Control and signal processing electronic circuitries fabricated in a chip are packaged together with a chip containing the photonic components of the ranging system. The light ranging and detection system generates a THz beam in addition to an optical beam, and both beams combined allow reconfigurable spectroscopy.
An optical engine. In some embodiments, the optical engine includes an electronic interfacing component including: an upper surface having a plurality of conductors for forming a corresponding plurality of connections to a host board, a lower surface having a plurality of conductors for forming a corresponding plurality of connections to one or more optoelectronic elements, and a plurality of vias extending from the lower surface to the upper surface.
G02B 6/42 - Coupling light guides with opto-electronic elements
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
A photonic buried interposer for converting light between a first optical mode of a first optical component and a second optical mode of a second optical component, the second optical component being larger than the first optical component; the buried interposer comprising a bi-layer taper, the bi-layer taper comprising: a top device layer comprising an upper tapered waveguide; and a bottom device layer comprising a lower tapered waveguide; wherein the upper tapered waveguide extends from a first end for coupling to the first optical component to a second end for coupling to the second optical component; and the lower tapered waveguide starts from an intermediate location between the first and second ends and extends from the intermediate location to the second end.
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/30 - Optical coupling means for use between fibre and thin-film device
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
An imaging component for receiving light, the imaging component comprising a photonic integrated circuit, PIC, receiver, a slab, a wedge, and a lens the wedge having a front surface and an opposing back surface, the imaging component arranged to define a receiving optical path through the front surface of the wedge, the receiving optical path continuing through the wedge and through the slab to the PIC receiver, the lens being configured to focus light of the receiving optical path onto the PIC receiver.
A LiDAR transmitter photonic integrated circuit (PIC) for scanning an environment over a field of view, FOV, the FOV having an azimuthal angular range and a polar angular range, the LiDAR transmitter PIC comprising: a light source for providing light from at least one laser, an optical switch having an input and a plurality of outputs, the optical switch being configured to selectively direct light received at the input to one of the plurality of outputs, and a light emitting component having a plurality of inputs and a plurality of emitters, the light emitting component configured to selectively emit beams over a plurality of emission angles having different respective polar components within the polar angular range of the FOV, wherein the light source is coupled to the input of the optical switch and each of the plurality of outputs of the optical switch is coupled to a respective one of the plurality of inputs of the light emitting component.
A wavelength-division multiplexing, WDM, receiver, comprising: an input waveguide; and a demultiplexer, connected to the input waveguide. The demultiplexer is configured to: demultiplex a signal received from the input waveguide into a plurality of separate signals, one or more of the separate signals having multiple optical modes, and output each of the plurality of separate signals into respective output waveguides, connected to respective output ports of the demultiplexer. At least one output waveguide, configured to carry one of the separate signals having multiple optical modes, is connected to a respective mode rotator, the or each mode rotator being configured to rotate the multiple optical modes of the respective separate signal received therein. The or each mode rotator is connected to a respective waveguide photodiode, configured to generate a photocurrent from the separate signal received from the respective mode rotator.
An optoelectronic device. The device comprising: a multi-layered optically active stack, including one or more layers comprising a lll-V semiconductor material; an input waveguide, arranged to guide light into the stack; and an output waveguide, arranged to guide light out of the stack. The multi-layered optically active stack is butt or edge coupled to the input waveguide and output waveguide.
A method of manufacturing an optoelectronic device including a mode converter. The method has the steps of: on a first silicon-on-insulator (SOI) wafer, manufacturing the optoelectronic device; and either: on a second SOI wafer, manufacturing a mode converter; and bonding the mode converter to the first SOI wafer; or bonding a second SOI wafer to the first SOI wafer to form a combined wafer; and etching a mode converter into the combined wafer.
A system integrating a fan-out package, including a first semiconductor die (120), with a second semiconductor die (110). In some embodiments the fan-out package includes the first semiconductor die (120), a mold compound (305), covering the first semiconductor die on at least two sides, and an electrical contact, on the lower surface of the first semiconductor die. The fan-out package may have a rabbet (315) along a portion of a lower edge of the fan- out package.
A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01S 5/02 - Structural details or components not essential to laser action
90.
WAVEGUIDE TYPE PHOTODETECTOR AND METHOD OF MANUFACTURE THEREOF
A silicon based photodetector and method of manufacturing the same. The photodetector comprising: a silicon substrate (201); a buried oxide layer (202), above the silicon substrate; and a waveguide (203), above the buried oxide layer. The waveguide (203) includes a silicon, Si, containing region and a germanium tin, GeSn, containing region (209), both located between a first doped region (206) and a second doped region (207) of the waveguide (203), thereby forming a PIN diode. The first doped region (206) and the second doped region (207) are respectively connected to first and second electrodes (210a, 210b), such that the waveguide (203) is operable as a photodetector.
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/0232 - Optical elements or arrangements associated with the device
91.
INTEGRATION OF PHOTONIC COMPONENTS ON SOI PLATFORM
An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
92.
lll-V/SI HYBRID OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE
A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro- optically active mesa.
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
An optoelectronic device. The optoelectronic device comprising: a rib waveguide provided on a substrate of the device, the rib waveguide comprising a ridge portion and a slab portion; a heater, disposed within the slab portion; a thermally isolating trench, adjacent to the rib waveguide, and extending into the substrate of the device; and a thermally isolating cavity within the substrate, which is directly connected to the thermally isolating trench, and which extends across at least a part of a width of the rib waveguide between the rib waveguide and the substrate.
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
An electro-optical package. In some embodiments, the package includes an electronic integrated circuit module, a first electro-optical component, and a photonic integrated circuit. The first electro-optical component may be in a top surface of the photonic integrated circuit. The electronic integrated circuit module may have a top surface facing toward and overlapping both a portion of the first electro-optical component, and a portion of the photonic integrated circuit.
An electro-optical package. In some embodiments, the electro-optical package includes a first electro-optical chip coupled to an array of optical fibers, and a first physical medium dependent integrated circuit coupled to the first electro-optical chip.
A system including an optical engine. In some embodiments, the system includes an integrated circuit in a first-level package, and the system includes the optical engine, in the first-level package, and the optical engine includes an electro-optical chip.
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
COMPOUND SEMICONDUCTOR TECHNOLOGIES GLOBAL LIMITED (United Kingdom)
Inventor
Zilkie, Aaron John
Mckee, Andy
Srinivasan, Pradeep
Abstract
An optoelectronic device and an array comprising a plurality of the same. The device(s) comprising: an optically active region with an electrode arrangement for applying an electric field across the optically active region; a first curved waveguide, arranged to guide light into the optically active region; and a second curved waveguide, arranged to guide light out of the optically active region; wherein the first curved waveguide and the second curved waveguide are formed of a material having a different band-gap to a band-gap of the optically active region, and wherein the overall guided path formed by the first curved waveguide, the optically active region and the second curved waveguide is U-shaped.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/50 - Amplifier structures not provided for in groups
A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and applying a metal coating to the underside surface. Also disclosed is a mirror, and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon device layer on top of a BOX layer; creating a V-groove in the silicon device layer, the V-groove extending to the BOX layer and having a first angled wall and a second angled wall; providing a reflective coating to just one of the two angled walls of the V-groove to create a mirrored surface; and growing silicon on top of the reflective surface to fill the V-groove, the interface between the grown silicon and the reflective surface forming the reflective surface of the mirror.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A chemical sensor, including a porous optical waveguide (105). The loss or index of refraction, or both, of the porous waveguide (105) is affected by the presence of one or more chemicals of interest.
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; a waveguide region, where a portion of the silicon device layer and a portion of the BOX layer underneath the portion of the device layer have been removed, the portion of the BOX layer having been replaced with a layer of silicon and a layer of crystalline oxide on top of the silicon; and a waveguide structure located directly on top of the crystalline oxide layer, the waveguide structure including a P doped region, and an N doped region with an intrinsic region in-between, creating a PIN junction across which a bias can be applied to create a modulation region.
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
patents
