An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A multi-module wearable device. According to an embodiment of the present disclosure, there is provided a system, including: a first wearable instrument; a second wearable instrument including a biometric sensor; an electrical connection between the first wearable instrument and the second wearable instrument; and a strap, sized and dimensioned to be disposed about a wrist. The electrical connection may be capable of connecting the first wearable instrument to the second wearable instrument when the second wearable instrument is at a first position on the strap relative to the first wearable instrument, and of connecting the first wearable instrument to the second wearable instrument when the second wearable instrument is at a second position on the strap relative to the first wearable instrument.
A system and method for optical coupling. In some embodiments, the system includes a first semiconductor chip, including a semiconductor optical amplifier; and a second semiconductor chip, including a fork coupler. The fork coupler may includes a plurality of waveguide fingers, and an output waveguide. The waveguide fingers may be configured to guide, together, a first optical mode of the fork coupler; and the fork coupler may be arranged such that an output mode of the semiconductor optical amplifier couples to the first optical mode of the fork coupler.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A system for sensing one or more biometrics. In some embodiments, the system includes a first wearable instrument; a second wearable instrument including a biometric sensor; a conductive connection between the first wearable instrument and the second wearable instrument; and a strap, sized and dimensioned to be disposed about a wrist. The system may be capable of securing the first wearable instrument to the strap, of securing the second wearable instrument to the strap at a first position relative to the first wearable instrument, and of securing the second wearable instrument to the strap at a second position relative to the first wearable instrument.
A system and method for alignment. In some embodiments, the method includes measuring a first offset, the first offset being an offset along a first direction between a first alignment mark and a second alignment mark, the first alignment mark being an alignment mark on a first edge of a source die, the second alignment mark being an alignment mark on a target wafer, and the first direction being substantially parallel to the first edge of the source die.
An optical assembly (100) for use in a wearable device is provided, the assembly (100) comprising: a prism (104), a photonic integrated chip, PIC (108), a substrate layer (106), and a lid (102); wherein the PIC (108) is mounted onto the substrate layer (106); the prism (104) comprising: (i) a first input/output surface (112) optically coupled to the PIC (108), and (ii) a second input/output surface (114) optically coupled to the lid (102), the second input/output surface (114) orientated perpendicularly to the first input/output surface (112), and wherein the prism (104) provides an optical path and reflects a percentage of light from the first input/output surface (112) to the second input/output surface (114). Methods of manufacturing such an optical assembly are also provided.
A wearable device. In some embodiments, a system includes a wearable device configured to be worn against the skin of a subject, including: a transmitting window; a light source for generating light for transmission through the transmitting window; a receiving window; a photodetector configured to detect light received through the receiving window; and an opaque barrier, an edge of the transmitting window being separated from an edge of the receiving window by a gap having a width of less than 2 mm, and the opaque barrier being in the gap.
A wafer with a buried V-groove cavity, and a method for fabricating V-grooves. In some embodiments, the method includes bonding a first layer, to a top surface of a substrate, to form a composite wafer, the first layer being composed of a first semiconductor material, the substrate being composed of a second semiconductor material, the top surface of the substrate having a cavity, the cavity including a V-groove.
A minimally invasive spectrophotometric system. In some embodiments, the system includes a minimally invasive device and a spectrophotometer. The spectrophotometer may include: a transmitting fiber, a receiving fiber, and a head. The head of the spectrophotometer may include: a light source connected to the transmitting fiber and a photodetector connected to the receiving fiber. A portion of the transmitting fiber may be in an insertion tube of the minimally invasive device, and a portion of the receiving fiber may be in the insertion tube of the minimally invasive device. The head of the spectrophotometer may occupy a volume of less than 300 cubic centimeters.
A method of testing one or more optoelectronic devices located on respective device coupons. The device coupon(s) are present on a wafer. The method comprises: testing the or each optoelectronic device using a corresponding testing element, the testing element(s) being located on the same wafer as the device coupon(s), by either: in a first testing protocol, operating the optoelectronic device so as to produce an optical output, and detecting the light incident on the testing element from the optoelectronic device under test, or in a second testing protocol, detecting, by the optoelectronic device under test, the light received from the testing element.
A coupon wafer for a micro-transfer printing process. The coupon wafer including a device coupon attached to a substrate of the coupon wafer by one or more tethers; wherein the or each tether is a pillar extending at least partially through the device coupon to contact the substrate of the coupon wafer.
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.
A photonic integrated circuit for use in hyperspectral spectroscopy. The photonic integrated circuit comprising: a multi-spectral laser source, configured to produce a multi-spectral optical signal; a modulator, the modulator configured to split the multi-spectral optical signal into a first component and a second component, and apply an up-chirp modulation profile to the first component and a down-chirp modulation profile to the second component; a first transmitter and receiver module, configured to transmit the modulated first component and receive reflections of the first component; and a second transmitter and receiver module, configured to transmit the modulated second component and receive reflections of the second component.
Echelle gratings with a shared free propagation region. In some embodiments, a system includes: a first echelle grating; and a second echelle grating. The first echelle grating may include: a first input waveguide having an end on a first Rowland circle; a first grating on the first Rowland circle; and a first output waveguide having an end on the first Rowland circle. The second echelle grating may include: a second input waveguide having an end on a second Rowland circle; a second grating on the second Rowland circle; and a second output waveguide having an end on the second Rowland circle. The second input waveguide may be separate from the first input waveguide, the second output waveguide may be separate from the first output waveguide, and the first Rowland circle may overlap the second Rowland circle.
A system and method for calibrating speckle-based sensor. In some embodiments, the system includes a wearable device including: a laser, an array detector; and a processing circuit, the processing circuit being configured to: obtain a calibration of the array detector, using an incoherent light source; obtain a speckle image, using the laser; and calculate a corrected speckle-based measurement, the corrected speckle-based measurement being based on the speckle image and on the calibration.
A system including an optical transmitter. In some embodiments, the system includes: a first array of lasers; a first wavelength multiplexer, connected to the first array of lasers; a first coupler, connected to the wavelength multiplexer; and a first wavelength meter, connected to a first output of the first coupler.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G01J 9/02 - Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
An optical sensing module suitable for a gas phase sample, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: one or more lasers, each laser of the one or more lasers operating at a wavelength that is different from the wavelength of the others; one or more optical outputs for light originating from the one or more lasers, the optical output arranged such that the light interacts with the gas-phase sample; and one or more photodetectors configured to detect light after interaction with the gas-phase sample.
G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
G01J 3/18 - Generating the spectrum; Monochromators using diffraction elements, e.g. grating
A61B 5/08 - Measuring devices for evaluating the respiratory organs
G01N 21/39 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/10 - Construction or shape of the optical resonator
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
Dialysis patients may be affected by renal failure and may be affected by other health conditions, such as hypertension. During and between dialysis sessions, it may be advantageous to monitor various characteristics of the patient and of the dialysis system. As such, a system and method for dialysis biomarker monitoring is provided.
Dialysis patients may be affected by renal failure and may be affected by other health conditions, such as hypertension. During and between dialysis sessions, it may be advantageous to monitor various characteristics of the patient and of the dialysis system. As such, a system and method for dialysis biomarker monitoring is provided.
A semiconductor package. In some embodiments, the package has a top surface and a bottom surface, and includes: a semiconductor die having a front surface, a back surface, and a plurality of edges; a mold compound, on the back surface of the die and the edges of the die; a plurality of first conductive elements extending through the mold compound on the back surface of the die to the top surface of the package; and a plurality of second conductive elements on the bottom surface of the package.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
The present invention provides a laser comprising a laser cavity defined by a first reflector and a second reflector. The laser cavity comprising a gain region and an intracavity modulation stage for reducing coherence of the laser output. The intracavity modulation stage comprises a region configured to support a plurality of optical modes. The second reflector is a broadband reflector having a reflectance spectrum configured to support the plurality of optical modes.
A waveguide structure. In some embodiments, the waveguide structure, includes: a first waveguide (105), a second waveguide (120), and a third waveguide (125) on a substrate (115). The first waveguide (105) may be at a different height than the second waveguide (120). The waveguides may be configured to cause light to couple between the first waveguide (105) and the second waveguide (120), and between the second waveguide (120) and the third waveguide (125). The first, second, and third waveguides (105, 120, 125) may be composed of respective materials having a first index of refraction, a second index of refraction, and a third index of refraction respectively. The third material may include silicon and nitrogen. The second index of refraction may be greater than the first index of refraction, and less than the third index of refraction.
A sensor system for diffuse reflectance tissue monitoring, the sensor system comprising: one or more integrated photonic silicon or silicon nitride broadband transceiver circuits for multi-wavelength diffuse reflectance tissue monitoring, wherein the one or more transceiver circuits includes a transmitter photonic integrated circuit (PIC), the transmitter PIC comprising an optical phased array (OP A) the OP A comprising a steering mechanism to steer transmitted light across the tissue.
An optoelectronic device. The device comprising: an input waveguide, which receives an optical signal; a multistage photodiode detector, comprising a plurality of photodiode elements connected in series, one of the photodiode elements of the plurality of photodiode elements being connected to the input waveguide and configured to receive the optical signal therefrom; and a first electrode and a second electrode, wherein the first electrode is connected to a first contact of each of the plurality of photodiode elements, and the second electrode is connected to a second contact of each of the plurality of photodiode elements.
An optoelectronic device. The optoelectronic device comprising: a plurality of waveguide ridges provided in an array, each waveguide ridge extending away from a semiconductor bed; a plurality of upper contacts, each electrically connected to an upper surface of a respective waveguide ridge, said upper surface being located distal from the semiconductor bed; and a plurality of lower contacts, each located between a respective pair of waveguide ridges and electrically connected to the semiconductor bed.
A stamp suitable for use in a micro-transfer printing process. The stamp comprises: a carrier layer; a plurality of stamp base sections, wherein: each stamp base section is attached on a first surface to the carrier layer, and separated from each adjacent stamp base section by a gap; and each stamp base section includes one or more stamping posts, for adhering to a source coupon, each stamping post extending from a second surface of its respective stamp base section.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
B29C 33/38 - SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING - Details thereof or accessories therefor characterised by the material or the manufacturing process
An optoelectronic device. The device comprises: a silicon-on-insulator platform, including a silicon waveguide, formed in a silicon device layer, a silicon substrate, and a cavity; a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor based device and the substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
A computer-implemented method for determining a hydration status of a user, the computer-implemented method. The computer-implemented method comprises acquiring, from sensor on a wearable device worn by a user, data including bodily parameter data related to the user. The computer-implemented method further comprises applying a model to the bodily parameter data to obtain hydration information related to the user. The model derives, from the hydration information, a hydration rank indicative of a hydration status of the user. The hydration rank is a given grade on a hydration rank scale.
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
G16H 40/67 - ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices for remote operation
G16H 50/30 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for individual health risk assessment
A computer-implemented method for deriving a physiological rank indicative of a physiological status of a user, the computer-implemented method comprising acquiring, from a sensor on a wearable device worn by a user, data including bodily parameter data related to the user, and applying a model to the bodily parameter data to obtain physiological information related to the user, and deriving, from the physiological information, a physiological rank indicative of a physiological status of the user wearing the device, wherein the physiological rank is a given value on a physiological rank scale.
G16H 50/30 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for individual health risk assessment
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
G16H 40/67 - ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices for remote operation
A system with a deformable membrane for speckle mitigation. In some embodiments, the system includes a laser for producing laser light; a photodetector for detecting the laser light after interaction of the laser light with a sample; and a silicon deformable membrane, for modulating the phase of the laser light.
The invention refers to a photonic integrated circuit (PIC), the photonic integrated circuit comprising: at least one laser, the laser having a laser output, a measuring portion including a measuring port and configured to measure an intensity and/or wavelength of light input at the measuring port, and an output portion configured to output light from the photonic integrated circuit to the portion of the tissue, wherein optionally the laser includes a ring resonator laser, a laser generating light having a fixed wavelength, a laser being constructed using hybrid integration, and/or a tunable laser.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/0205 - Simultaneously evaluating both cardiovascular conditions and different types of body conditions, e.g. heart and respiratory condition
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
A system including wavelength multiplexers. In some embodiments, the system includes: a first multiplexing element, having a first plurality of input waveguides, each configured to receive light at a respective wavelength of a first plurality of wavelengths; and a second multiplexing element, having a second plurality of input waveguides, each configured to receive light at a respective wavelength of a second plurality of wavelengths. A wavelength of the second plurality of wavelengths may fall between a first wavelength of the first plurality of wavelengths and a second wavelength of the first plurality of wavelengths.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
34.
FABRY-PEROT BASED MULTI RESONANT CAVITY TUNABLE LASER
There is provided a laser, and/or a reflector for a laser cavity comprising: a ring resonator structure; and a Fabry-Perot filter connected in cascade to the ring resonator structure by a coupling waveguide. The coupling waveguide is configured to propagate light having a frequency corresponding to any of the resonant frequencies of the ring resonator structure to the Fabry-Perot filter, and the Fabry-Perot filter is configured to select one or more frequencies and return light having a frequency matching any of the selected frequencies to the ring resonator structure via the coupling waveguide.
H01S 3/082 - Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
A system and method for health state estimation. In some embodiments, the method includes receiving a first measurement of a subject, the first measurement being a first tissue spectrum of the subject; and generating, using a machine learning inference process based on the first measurement, an estimate of an aspect of the health state of the subject.
G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data mining; ICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems
G06N 3/088 - Non-supervised learning, e.g. competitive learning
G06N 3/044 - Recurrent networks, e.g. Hopfield networks
G16H 40/63 - ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices for local operation
An optical sensor for spectroscopic analysis of a sample, the optical sensor comprising: a photonic integrated chip (PIC) for providing light to the sample, the PIC comprising: one or more laser(s) designed to operate at one or more respective predetermined wavelength(s), each of the one or more laser(s) having an output that is optically coupled to an optical output of the PIC; and a monitor located on the PIC for determining the wavelength of the optical output; the optical sensor further comprising: a detector for collecting a spectrum from the sample; and one or more processors configured to: compare the wavelength of the laser(s) at the optical output with each of their respective predetermined wavelength(s); and if a deviation above a certain threshold is detected between the wavelength of the laser(s) and the predetermined wavelength(s), adapt the collected spectrum to generate a reconstructed spectrum; and use one or more datapoints from the reconstructed spectrum for the spectroscopic analysis.
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
An optical sensor module for measuring both speckleplethysmography (SPG) and photoplethysmography (PPG) signals at human or animal tissue, the optical sensor module comprising:a first light source, for illuminating the tissue for use with SPG measurements, the first light source comprising a laser; a second light source, for illuminating the tissue for use with PPG measurements; and one or more optical sensor(s) for receiving light from the illuminated tissue.
An optical sensor module for measuring both speckleplethysmography (SPG) and photoplethysmography (PPG) signals at human or animal tissue, the optical sensor module comprising: a first light source, for illuminating the tissue for use with SPG measurements, the first light source comprising a laser; a second light source, for illuminating the tissue for use with PPG measurements; and one or more optical sensor(s) for receiving light from the illuminated tissue.
A laser comprising a photonic component comprising a gain medium; and a waveguide platform comprising a Distributed Bragg Reflector, DBR, section. The photonic component is optically coupled to the waveguide platform. One or more thermal heaters are positioned at the DBR section of the waveguide platform, and/or at a phase section of the waveguide platform located between the gain medium and the DBR section.
A photonic module, comprising a first waveguide; a second waveguide, disposed on an opposing side of the first waveguide to a substrate; and, a coupling section. One of the first waveguide and the second waveguide is formed of crystalline silicon. The other of the first waveguide and the second waveguide is formed of amorphous silicon. The coupling section is configured to couple light between the first waveguide and the second waveguide. Such a silicon photonic module has enhanced coupling and transmission properties in contrast to conventional modules.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
A coupon wafer comprising a device coupon (110) for use in a micro-transfer printing process used to fabricate an optoelectronic device. The coupon wafer includes a wafer substrate (124), and the device coupon (110) is attached to the wafer substrate via a tether (122) and the tether (122) is formed from a dielectric material.
A sensor. In some embodiments, the sensor includes a first waveguide, a flexible support element, and a second waveguide. A first portion of the first waveguide may be supported by the flexible support element and separated by a first gap from a second portion of the first waveguide. The flexible support element may be capable of bending so as to cause an effective index of refraction of the first waveguide to change. The first waveguide may be coupled to the second waveguide through a second gap, the second gap being at an end of the first waveguide and an end of the second waveguide.
A method for determining a calibration function includes: calculating a first distance, between a distribution of target spectra and a comparison distribution of spectra; calibrating the distribution of target spectra with a first preliminary calibration function to form a first distribution of calibrated target spectra; calculating a second distance, between the first distribution of calibrated target spectra and the comparison distribution of spectra; determining that the second distance is less than the first distance; and setting the calibration function equal to the first preliminary calibration function.
A method of manufacturing a transfer die. The manufactured transfer die comprises a semiconductor device suitable for bonding to a silicon-on-insulator wafer. The method comprises the steps of providing a non-conductive isolation region in a semiconductor stack, the semiconductor stack comprising a sacrificial layer above a substrate; and etching an isolation trench into the semiconductor stack from an upper surface thereof, such that the isolation trench extends only to a region of the semiconductor stack above the sacrificial layer. The isolation trench and the non-conductive isolation region together separate a bond pad from a waveguide region in the optoelectronic device.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/76 - Making of isolation regions between components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
A computer-implemented method to improve the accuracy of a calculation of a biomarker value from a spectral measurement. The computer-implemented method comprises receiving a primary spectral measurement from a primary detector, receiving, a secondary measurement from a secondary detector, and calculating a value of the biomarker using a biomarker algorithm. The biomarker algorithm takes an input from the primary spectral measurement and a calibration parameter from the secondary measurement.
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
G01N 21/359 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
A source wafer for use in a micro-transfer printing process. The source wafer comprising: a wafer substrate; a photonic component, provided in a device coupon, the device coupon being attached to the wafer substrate via a release layer; and one or more etch stop layers, located between the photonic component and the wafer substrate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An integrated switch assembly having a stacked configuration, the integrated switch assembly comprising: a first layer, the first layer comprising a photonic integrated circuit, PIC; a second layer, the second layer comprising a switch ASIC; wherein the first layer is mounted onto a substrate and the second layer is mounted on top of the first layer.
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
An optical speckle receiver for receiving a speckle signal from a sample, the optical speckle receiver comprising an optical detector and an aperture and/or lens array. The aperture and array respectively comprise a plurality of apertures or lenses and is located between the sample and the optical detector such that the received speckle pattern is obtained from multiple discrete sample locations.
An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a III-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the III-V semiconductor-based optoelectronic component.
An optical speckle receiver for receiving a speckle signal from a sample, the optical speckle receiver comprising an optical detector and an aperture and/or lens array. The aperture and array respectively comprise a plurality of apertures or lenses and is located between the sample and the optical detector such that the received speckle pattern is obtained from multiple discrete sample locations.
A waveguide platform and method of fabricating a waveguide platform on a silicon wafer; the method comprising: providing a wafer having a layer of crystalline silicon;
A waveguide platform and method of fabricating a waveguide platform on a silicon wafer; the method comprising: providing a wafer having a layer of crystalline silicon;
lithographically defining a first region of the top layer; electrochemically etching the wave-guide platform to create porous silicon at the lithographically defined first region; epitaxially growing crystalline silicon on top of the porous silicon to create a first upper crystalline layer with a first buried porous silicon region underneath; wherein the first buried porous silicon region defines a taper between a first waveguide region of crystalline silicon having a first depth and a second waveguide region of crystalline silicon having a second depth which is smaller than the first depth.
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
A demultiplexer for use in a wavelength division multiplexed system. The demultiplexer comprises: an input waveguide, configured to receive a wavelength division multiplexed signal; a demultiplexing element, configured to demultiplex the multiplexed signal received from the input waveguide into a plurality of multi-mode demultiplexed signal components; a multi-mode output waveguide, the multi-mode output waveguide being coupled to the demultiplexing element and configured to receive one of the multi-mode demultiplexed signal components; and a splitter, coupled to the multi-mode output waveguide, and configured to split the received multi-mode demultiplexed signal component into two single-mode outputs.
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
The invention refers to a frequency shifter for heterodyne interferometry measurements, comprising a chip, an input waveguide configured to guide a light beam, at least four phase modulators, each being arranged to receive the light beam from the input waveguide and configured to modulate a phase of the light beam, an output combiner being arranged to let the light beams modulated by each phase modulator interfere, a first output waveguide coupled to the output combiner and configured to receive the modulated light beams constructively interfering at the output combiner, a second output waveguide coupled to the output combiner and configured to receive the modulated light beams destructively interfering at the output combiner, wherein the input waveguide, the phase modulators, the output combiner, the first output waveguide and the second output waveguide are arranged on the chip.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
The present invention provides a photodiode for a wearable sensor system, the photodiode having a rectangular active area sensitive to wavelengths within the spectral range of 1200 nm to 2400 nm. The present invention also provides a wearable sensor system comprising the photodiode.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/024 - Arrangements for cooling, heating, ventilating or temperature compensation
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A photonic integrated device comprising: a photonic integrated chip (PIC) adapted to investigate blood flow at a portion of tissue of a user, said PIC comprising: a laser having an optical output, or waveguide for guiding an optical output from an external laser, the optical output being split into a first optical component and a second optical component; wherein the first optical component is arranged to be transmitted to and generate speckle at the portion of tissue of the user; the photonic integrated device further comprising: one or more detectors, each detector configured to receive the speckle generated by the first optical component at the portion of tissue; and one or more optical splitters optically coupling the second optical component to one or more respective input(s) of the one or more detectors; wherein the photonic integrated device is further adapted to measure interference at the one or more detectors between a sample arm formed by the first optical component and a reference arm formed by the second optical component.
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 5/02 - Measuring pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography; Heart catheters for measuring blood pressure
56.
SYSTEM AND METHOD FOR POSITIONING A SENSOR ON A SUBJECT
A system and method for positioning a sensor on a subject. In some embodiments, the system includes an instrument holder, the instrument holder being configured to be secured to a subject, and to hold an instrument temporarily.
A source wafer for use in a micro-transfer printing process. The source wafer comprises: a substrate; a device coupon (110), including an optoelectronic device; and a breakable tether securing the device coupon to the substrate. The breakable tether includes one or more breaking regions which connect the breakable tether to the substrate.
The invention refers to an optical device for heterodyne interferometry, comprising a chip, a beam splitter, a first waveguide arranged on the chip, light propagating in the first waveguide being guided to the beam splitter, a second waveguide arranged on the chip, light propagating in the second waveguide being guided to and/or from the beam splitter, wherein the beam splitter, the first waveguide, and the second waveguide form part of a Michelson interferometer, wherein the first waveguide and the second waveguide at least partially form two arms of the Michelson interferometer, and wherein two further arms of the Michelson interferometer are at least partially arranged outside the chip.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
A semiconductor photodiode. The semiconductor photodiode including: an input waveguide, arranged to receive an optical signal at a first port and provide the optical signal from the second port; a photodiode waveguide, arranged to receive the optical signal from the second port of the input waveguide, and at least partially convert the optical signal into an electrical signal; and an electro-static defence component, located adjacent to the photodiode waveguide. The electro-static defence component and the photodiode waveguide are electrically connected in parallel.
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
G02B 6/42 - Coupling light guides with opto-electronic elements
An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A semiconductor device. In some embodiments, the semiconductor device includes: a first layer having a first region and a second region, the first region being corrugated with a plurality of corrugations, the second region being uncorrugated. A first cycle of the corrugations may have a first duty cycle and a second cycle of the corrugations may have a second duty cycle, the second cycle being between the first cycle and the second region, and the second duty cycle being between the first duty cycle and the duty cycle of the second region.
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A sensing device comprising: a light detection and ranging (LiDAR) sensor; and one or more optical spectroscopic sensors configured to extract biomarker information from one or more optical measurements of a user.
G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
G01N 21/39 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
An optical modulator. The optical modulator comprising: a micro-ring resonator; and a bus waveguide, including an input waveguide region, an output waveguide region, and a coupling waveguide region optically coupled to the micro-ring resonator and located between the input waveguide region and the output waveguide region. The micro-ring resonator includes a modulation region, the modulation region being formed of a silicon portion and a III-V semiconductor portion separated by a crystalline rare earth oxide dielectric layer.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
64.
Thermosonic bonding for securing photonic components
The present disclosure includes a method of securing a photonic component to a semiconductor chip, the method including forming a thermosonic bond between the semiconductor chip and a cap to fix the cap against the photonic component. The present disclosure also includes an apparatus including a semiconductor chip having a V-groove, an optical fiber in the V-groove, and a cap secured to the semiconductor chip through a bond including a metal bump, wherein the cap fixes the optical fiber in the V-groove.
An optical multiplexer. The optical multiplexer comprising: a plurality of input waveguides, each comprising an input slab portion and an input rib portion; an output waveguide, comprising an output slab portion and output rib portion; and a wavelength multiplexer element, coupled to each input waveguide and the output waveguide, the wavelength multiplexer element comprising a slab waveguide which includes a grating configured to multiplex signals of differing wavelengths, received from the input waveguides, into a multiplexed signal, and provide the multiplexed signal to the output waveguide. The input rib portion(s) of one or more of the input waveguides are tapered so as to decrease in width in a direction towards the slab waveguide of the wavelength multiplexer element which is an echelle grating or an arrayed waveguide grating.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A laser. In some embodiments, the laser includes an optical amplifier, and an output reflector. The output reflector may be configured to receive light from the optical amplifier and to reflect light at a first wavelength back toward the optical amplifier. The output reflector may include a wavelength-selective element, and a coupler configured to receive the light from the optical amplifier and to couple a portion of the light to the wavelength-selective element.
An optical instrument for determining a wavelength of light generated by a light source. The optical instrument may include a signal generator for generating a driving signal, a tunable optical filter device configured to receive the driving signal, the tunable optical filter device configured to diffract the light generated by the light source based on the driving signal, an optical detector device configured to detect a timing of maximum diffraction of light diffracted by the tunable optical filter device, and an analyzer configured to determine the wavelength of the light based the timing of maximum diffraction.
G02F 1/11 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
A method of preparing a device coupon for a micro-transfer printing process from a multi-layered stack located on a device wafer substrate. The multi-layered stack comprises a plurality of semiconductor layers. The method comprises steps of: (a) etching the multi-layered stack to form a multi-layered device coupon, including an optical component; and (b) etching a semiconductor layer of the multi-layered device coupon to form one or more tethers, said tethers securing the multi-layered device coupon to one or more supports.
An optical out-coupler unit for out-coupling light from a waveguide, comprising a substrate having a planar top surface, a waveguide arranged on the top surface of the substrate and having a facet, a reflective surface, wherein the reflective surface is arranged spaced apart from the facet and opposing the facet, wherein the reflective surface is inclined with respect to a normal to the top surface of the substrate by more than 45°. The optical out-coupler may be part of a photonic integrated chip (PIC).
A bonding fixture. In some embodiments, the fixture includes: a plate for supporting a central region of the wafer, the central region including 80% of the area of the wafer; and a frame for supporting: the edge of the wafer, and the edge of the plate, the frame having: a first vacuum passage, for pulling the wafer against an upper surface of the frame, and a second vacuum passage, for pulling the plate against the frame.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
72.
OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE
An optoelectronic device comprising an optical waveguide formed in a silicon device layer of a silicon-on-insulator wafer. The optical waveguide including a semiconductor junction comprising a first doped region of semiconductor material and a second doped region of semiconductor material. The second doped region containing dopants of a different species to the first doped region. A first portion of the first doped region extends horizontally on top of the second doped region, a second portion of the first doped region extends vertically along a lateral side of the second doped region and a third portion of the first doped region protrudes as a salient from the first or second portion of the first doped region into the second doped region.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
A siliconized heterogeneous optical engine. In some embodiments, the siliconized heterogeneous optical engine includes a photonic integrated circuit; an electro-optical chip, on a top surface of the photonic integrated circuit; an electronic integrated circuit, on the top surface of the photonic integrated circuit; an interposer, on the top surface of the photonic integrated circuit; a redistribution layer, on a top surface of the interposer, the redistribution layer including a plurality of conductive traces; and a plurality of protruding conductors, on the conductive traces of the redistribution layer. The electronic integrated circuit may be electrically connected to the electro-optical chip and to a conductive trace of the plurality of conductive traces of the redistribution layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
G02B 6/42 - Coupling light guides with opto-electronic elements
A phase shift keying modulator. The modulator comprises: a plurality of silicon waveguides provided in a device layer of a silicon-on-insulator platform, the silicon-on-insulator platform including one or more cavities; one or more III-V semiconductor based devices located within the one or more cavities of the silicon-on-insulator platform, each III-V semiconductor-based device including a III-V semiconductor based waveguide which is coupled at an input end to one of the plurality of silicon waveguides and coupled at an output end to another of the plurality of silicon waveguides, each III-V semiconductor based waveguide comprising an active phase modulating portion; and one or more contacts in electrical contact with each active phase modulating portion, such that the phase shift keying modulator is operable to modulate the phase of an optical wave passing through each active phase modulating portion.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
A via frame. In some embodiments, the via frame includes: a sheet of epoxy mold compound, having a plurality of holes each extending through the sheet of epoxy mold compound, and a plurality of conductive elements, each extending through a respective one of the holes.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H05K 3/40 - Forming printed elements for providing electric connections to or between printed circuits
A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
An optical waveguide structure. In some embodiments, the optical waveguide structure includes a semiconductor waveguide having a waveguide ridge, and a heater. The waveguide ridge may have a varying dopant concentration across its cross-section. The heater may include a first contact and a second contact, and the waveguide structure may include a conductive path from the first contact to the second contact, the conductive path extending through a doped portion of the waveguide ridge.
An electro-optical modulator. The electro-optical modulator comprising: an input waveguide, configured to guide light into a modulation region of the electro-optical modulator; a plurality of sub-modulators, within the modulation region, each sub-modulator having a transfer function between an applied voltage and an optical phase shift; and an output waveguide, configured to guide light out of the modulation region. The combination of the transfer functions of each sub-modulator is such that a total transfer function between an applied voltage and an optical phase shift of the modulation region is substantially linear over a range of operating voltages.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
An optical ring modulator for use as a PAM-N modulator, the optical ring modulator comprising:
a first optical waveguide which forms a bus waveguide;
a ring waveguide optically coupled to the bus waveguide; wherein, the ring waveguide comprises:
a first electrode region having a first pn junction or first Moscap, the first pn junction or first Moscap configured to generate a first phase shift upon application of a given voltage across the first pn junction or first Moscap; and
a second electrode region having a second pn junction or second Moscap, the second pn junction or second Moscap configured to generate a second phase shift when the given voltage is applied across the second pn junction or second Moscap, wherein the second phase shift is less than the first phase shift.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
A photonic integrated circuit. In some embodiments, the photonic integrated circuit includes: a waveguide; and a waveguide facet, a first end of the waveguide being at the waveguide facet, a first angle being an angle between: the waveguide at the first end of the waveguide and the normal to the waveguide facet, the first angle being at least 5 degrees, a first section of the waveguide having a first end at the waveguide facet and a second end, the first section having: a curvature of less than 0.01/mm at the first end of the first section, a curvature of less than 0.01/mm at the second end of the first section, and a curvature of at least 0.1/mm at a point between the first end and the second end.
2 within the first section; a curvature having a magnitude of at most 0.03/mm at the first end; and a curvature having a magnitude of at least 0.1/mm at the second end.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
An imaging component for receiving light, the imaging component comprising a photonic integrated circuit, PIC, receiver, a slab, a wedge, and a lens the wedge having a front surface and an opposing back surface, the imaging component arranged to define a receiving optical path through the front surface of the wedge, the receiving optical path continuing through the wedge and through the slab to the PIC receiver, the lens being configured to focus light of the receiving optical path onto the PIC receiver.
G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
A tapered waveguide. In some embodiments, the waveguide has a narrow end and a wide end. A taper angle of the waveguide may be, at each point along the waveguide, less than an adiabatic taper angle by a margin. The margin may be greater at a first point than at a second point, where the adiabatic taper angle is less at the first point than at the second point.
A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the III-V semiconductor based photonic component to the silicon waveguide.
A MOS capacitor-type optical modulator comprising a silicon-on-insulator (SOI) substrate, a first doped region in a silicon device layer of the SOI substrate, and a second doped region laterally separated from the first doped region by a vertically extending insulator layer to form a lateral MOS capacitor region. The first doped region, second doped region and insulator layer are formed from different materials.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
An optoelectronic module. In some embodiments, the optoelectronic module includes a substrate; a digital integrated circuit, on an upper surface of the substrate; a photonic integrated circuit, secured in a pocket of the substrate, the pocket being in the upper surface of the substrate; and an analog integrated circuit, on the photonic integrated circuit.
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
An optical isolator on a silicon photonic integrated circuit. The optical isolator comprising: a polarization splitter; a polarization rotator; and a Faraday rotator. The Faraday rotator comprises: one or more magnets providing a magnetic field; and a silicon spiral delay line. The silicon spiral delay line being formed from a silicon waveguide shaped into a spiral region having no built-in phase shifters and a central region within the spiral region. The central region having no more than a total of 180 degree of phase shifters.
G02F 1/09 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
G02F 1/095 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
A metal-oxide semiconductor capacitor, MOSCAP, based electro-optic modulator. The modulator comprising: an input waveguide; a modulating region, coupled to the input waveguide; and an output waveguide, coupled to the modulating region. The modulating region includes an n-i-p-n junction, the n-i-p-n junction comprising: a first n doped region, spaced from a p doped region by an intrinsic region, and a second n doped region, separated from the intrinsic region by the p doped region and on an opposing side of the intrinsic region to the first n doped region.
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
H01S 5/0683 - Stabilisation of laser output parameters by monitoring the optical output parameters
An electro-optical package. In some embodiments, the package includes: a carrier; a first integrated circuit, on the carrier; a first bonding layer, between the carrier and the first integrated circuit; a thermoelectric cooler, on the carrier; a second integrated circuit, on the thermoelectric cooler; and a first wire bond. The first wire bond may connect a first pad, on the first integrated circuit, to a second pad, on the second integrated circuit, the first pad and the second pad having a height difference less than 100 microns.
An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
G02B 6/10 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
93.
OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF
A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the III-V semiconductor based photonic component to the silicon waveguide.
A system and method for adjusting the shapes of polygons in a design. In some embodiments, the method includes inverting a first layer of the design, the first layer comprising one or more polygons, the inverting of the first layer forming a region complementary to the union of the polygons of the first layer, and including one or more inverse polygons. The method may further include performing a rounding operation on a first corner of a first inverse polygon of the one or more inverse polygons, to form a modified polygon.
A germanium based avalanche photo-diode device and method of manufacture thereof. The device including: a silicon substrate; a lower doped silicon region, positioned above the substrate; a silicon multiplication region, positioned above the lower doped silicon region; an intermediate doped silicon region, positioned above the silicon multiplication region; a doped germanium interface layer, positioned above the intermediate doped silicon region; an un-doped germanium absorption region, position above the doped germanium interface layer; an upper doped germanium region, positioned above the un-doped germanium absorption region; and an input silicon waveguide; wherein: the un-doped germanium absorption region and the upper doped germanium region form a germanium waveguide which is coupled to the input waveguide, and the device also includes a first electrode and a second electrode, and the first electrode extends laterally to contact the lower doped silicon region and the second electrode extends laterally to contact the upper doped germanium region.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
A LiDAR transmitter photonic integrated circuit (PIC) for scanning an environment over a field of view, FOV, the FOV having an azimuthal angular range and a polar angular range, the LiDAR transmitter PIC comprising: a light source for providing light from at least one laser, an optical switch having an input and a plurality of outputs, the optical switch being configured to selectively direct light received at the input to one of the plurality of outputs, and a light emitting component having a plurality of inputs and a plurality of emitters, the light emitting component configured to selectively emit beams over a plurality of emission angles having different respective polar components within the polar angular range of the FOV, wherein the light source is coupled to the input of the optical switch and each of the plurality of outputs of the optical switch is coupled to a respective one of the plurality of inputs of the light emitting component.
An assembly. In some embodiments, the assembly includes a first semiconductor chip, a substrate, and a first alignment element. The alignment of the first semiconductor chip and the substrate may be determined at least in part by engagement of the first alignment element with a first recessed alignment feature, in a surface of the first semiconductor chip.
An optoelectronic device. The device comprising: a multi-layered optically active stack, including one or more layers comprising a lll-V semiconductor material; an input waveguide, arranged to guide light into the stack; and an output waveguide, arranged to guide light out of the stack. The multi-layered optically active stack is butt or edge coupled to the input waveguide and output waveguide.
G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
A wavelength-division multiplexing, WDM, receiver, comprising: an input waveguide; and a demultiplexer, connected to the input waveguide. The demultiplexer is configured to: demultiplex a signal received from the input waveguide into a plurality of separate signals, one or more of the separate signals having multiple optical modes, and output each of the plurality of separate signals into respective output waveguides, connected to respective output ports of the demultiplexer. At least one output waveguide, configured to carry one of the separate signals having multiple optical modes, is connected to a respective mode rotator, the or each mode rotator being configured to rotate the multiple optical modes of the respective separate signal received therein. The or each mode rotator is connected to a respective waveguide photodiode, configured to generate a photocurrent from the separate signal received from the respective mode rotator.
A method of manufacturing an optoelectronic device including a mode converter. The method has the steps of: on a first silicon-on-insulator (SOI) wafer, manufacturing the optoelectronic device; and either: on a second SOI wafer, manufacturing a mode converter; and bonding the mode converter to the first SOI wafer; or bonding a second SOI wafer to the first SOI wafer to form a combined wafer; and etching a mode converter into the combined wafer.
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