A method includes receiving electrostatic sensor data in a processor of an electronic device from an electrostatic sensor mounted behind a touchscreen of the electronic device and using the electrostatic sensor data to determine when the touchscreen is being used. Based on whether or not the touchscreen is being used, an on-table detection (OTD) algorithm is selected from a plurality of available OTD algorithms. In one or more examples, the OTD algorithm may also be selected based on the current device mode of the electronic device, which may be determined from a lid angle, a screen angle, and a keyboard angle of the electronic device. The selected OTD algorithm is run to determine whether or not the electronic device is located on a stationary or stable surface.
G06F 3/0346 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of the device orientation or free movement in a 3D space, e.g. 3D mice, 6-DOF [six degrees of freedom] pointers using gyroscopes, accelerometers or tilt-sensors
G06F 3/0354 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
2.
SYSTEM FOR MONITORING DEFECTS WITHIN AN INTEGRATED SYSTEM PACKAGE
An integrated electronic system is provided with a package formed by a support base and a coating region arranged on the support base and having at least a first system die, including semiconductor material, coupled to the support base and arranged in the coating region. The integrated electronic system also has, within the package, a monitoring system configured to determine the onset of defects within the coating region, through the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, whose characteristics are affected by, and therefore are indicative of, the aforementioned defects.
An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
4.
METHOD FOR PERFORMING A CORRECTION OF AN IONOSPHERIC ERROR AFFECTING PSEUDO-RANGE MEASUREMENTS IN A GNSS RECEIVER, CORRESPONDING RECEIVER APPARATUS AND COMPUTER PROGRAM PRODUCT
A method corrects an ionospheric error affecting pseudo-range measurements in a GNSS receiver receiving a plurality of satellite signals from a plurality of satellites of the constellation of satellites. The method is performed in a navigation processing procedure performed at a GNSS receiver, receiving pseudo-range measurements previously calculated by the GNSS receiver obtained from a first carrier signal and a second carrier signal in the satellite signals, in particular in GPS bands L1 and L5. The method includes performing a correction procedure of the pseudo-range measurements including applying to the pseudo-range measurements corrections for predictable errors obtaining corrected pseudo-ranges and applying to the corrected pseudo-range measurements a further ionospheric error correction calculation to obtain further ionospheric error correction values.
G01S 19/07 - Cooperating elements; Interaction or communication between different cooperating elements or between cooperating elements and receivers providing data for correcting measured positioning data, e.g. DGPS [differential GPS] or ionosphere corrections
G01S 19/04 - Cooperating elements; Interaction or communication between different cooperating elements or between cooperating elements and receivers providing carrier phase data
5.
DC-DC CONVERTER APPARATUS AND CORRESPONDING CONTROL METHOD
A boost DC-DC converter includes a switching network, coupled to an inductor, controlled by a PWM driving signal. A control loop receives a voltage output and provides the PWM driving signal. The control loop generates an error signal as a function of a difference between voltage output voltage and a reference, with the PWM driving signal generated based on the error signal. A low pass filter circuit within the control loop receives the PWM driving signal and provides at least one filtered signal. An adder node of the control loop receives the at least one filtered signal from the low pass filter circuit for addition to the at least one filtered signal. The PWM driving signal is generated as a function of a sum of the filtered signal and the error signal.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/157 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
6.
VOLTAGE REGULATOR CIRCUIT AND CORRESPONDING DEVICE
A circuit includes a supply node receiving a supply voltage; an output node providing a regulated voltage; startup circuitry coupled to the supply node; current generator circuitry coupled to the startup circuitry and producing a current; a bandgap node coupled to bandgap circuitry to receive a bandgap voltage; multiplier circuitry coupled to the bandgap node and the current generator circuitry to receive and apply scaling to the current; a first transistor providing a threshold voltage drop across the first and second transistor nodes; a first resistive element interposed between the first transistor and the bandgap node; a second resistive element coupled between ground and the second node of the first transistor; and an operational amplifier receiving a pre-regulated voltage as a function of the bandgap voltage, the threshold voltage across the first transistor, and a voltage drop across the first and second resistive elements.
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/46 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc
A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.
H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
H10N 30/00 - Piezoelectric or electrostrictive devices
H10N 30/05 - Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
H10N 30/074 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
H10N 30/85 - Piezoelectric or electrostrictive active materials
In an embodiment, a USB interface includes a transformer, a primary winding of the transformer, and a first switch in series between a first and a second node, a secondary winding of the transformer and a component in series between a third and a fourth node, the fourth node configured to be set a first reference potential, a second switch connected between the third node and a first terminal, the first terminal configured to provide an output voltage of the USB interface; wherein the component is configured to avoid a current circulation in the secondary winding when the first switch is closed and a control circuit configured to compare a first voltage of an interconnection node between the secondary winding and the component to a first threshold and compare the first voltage to a second threshold when the first voltage is, in absolute values, above the first threshold.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
G06F 13/42 - Bus transfer protocol, e.g. handshake; Synchronisation
H02M 1/32 - Means for protecting converters other than by automatic disconnection
9.
PROCESS FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE INCLUDING TWO CHAMBERS AT DIFFERENT PRESSURES AND RELATED MICRO-ELECTRO-MECHANICAL DEVICE
Process for manufacturing a MEMS device, including: forming a dielectric region which coats part of a semiconductive substrate of a first semiconductive wafer; forming a region which is permeable to gases and coats the dielectric region; coupling the first semiconductive wafer to a second semiconductive wafer so as to form a first chamber, which houses a first movable mass and has a pressure equal to a first value, and a second chamber, which houses a second movable mass and has a pressure equal to the first value, the permeable region facing the second chamber; selectively removing a portion of the semiconductor substrate and an underlying portion of the dielectric region, so as to expose a part of the permeable region, so as to allow gas exchanges through the permeable region; placing the first and the second semiconductive wafers in an environment with a pressure equal to a second value, so that the pressure in the second chamber becomes equal to the second value; and subsequently forming, on the exposed part of the permeable region, a sealing region impermeable to gases.
A warped semiconductor die is attached onto a substrate such as a leadframe by dispensing a first mass of die attach material onto an area of the substrate followed by dispensing a second mass of die attach material so that the second mass of die attach material provides a raised formation of die attach material. For instance, the second mass may be deposited centrally of the first mass. The semiconductor die is placed onto the first and second mass of die attach material with its concave/convex shape matching the distribution of the die attach material thus effectively countering undesired entrapment of air.
In an embodiments a method includes obtaining a neural network (INN), the neural network having a plurality of neural layers, each layer being capable of being executed according to different implementation solutions and impacting a required memory allocation for the execution of the neural network and/or an execution time of the neural network, defining a maximum execution time threshold of the neural network and/or a maximum required memory allocation threshold for the execution of the neural network, determining an optimal required memory allocation size for the execution of the neural network from possible implementation solutions for each layer of the neural network, determining an optimal execution time of the neural network from the possible implementation solutions for each layer of the neural network and estimating a performance loss or a performance gain in terms of execution time and required memory allocation for each implementation solution of each layer of the neural network.
A back end of line (BEOL) structure for an integrated circuit chip includes a last metal structure providing a bonding pad. A passivation structure over the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer extends over the passivation structure and is placed in contact with the upper surface of the bonding pad. An insulator material layer covers the conformal nitride layer and includes a second opening that extends through both the insulator material layer and the conformal nitride layer. A foot portion of the conformal nitride layer on the upper surface of the bonding pad is self-aligned with the second opening.
In a DC-DC converter, a duty-cycle control signal is generated in response to comparing the switching stage output voltage and a reference voltage signal. A first circuit compares the duty-cycle control signal and a ramp to produce a PWM signal. A second circuit compares the duty-cycle control signal and a skip threshold to produce a skip control signal which halts switching operation of the switching stage. A count is made of number of periods of the skip control signal during a monitoring time window and the number of periods of a clock signal during a period of the skip control signal is counted. When the counted number of skip control signal periods is within a first range and the counted number of clock signal periods is within a second range, a common detection signal is asserted to trigger varying a value of the skip threshold signal.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
14.
SIC-BASED ELECTRONIC DEVICE WITH IMPROVED BODY-SOURCE COUPLING, AND MANUFACTURING METHOD
Electronic device, comprising: a semiconductor body having a surface; a body region in the semiconductor body, extending along a main direction parallel to the surface of the semiconductor body; and a source region in the body region, extending along the main direction. The electronic device has, at the body and source regions, a first and a second electrical contact region alternating with each other along the main direction, wherein the first electrical contact region exposes the body region, and the second electrical contact region exposes the source region. The electronic device further comprises an electrical connection layer extending with electrical continuity longitudinally to the body and source regions, in electrical connection with the first and the second electrical contact regions.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A differential pair of FETs forms a sensor circuit coupled to a differential current reading circuit that includes a current to voltage converter and an analog to digital converter. An ESD protection circuit interposed between the sensor circuit and the differential current reading circuit adds spurious currents to a differential sensor current output by the sensor circuit. A circuit before the ESD protection circuit switches the sign of the differential sensor current according to a period of complementary phase clock signals which correspond to a sampling interval of the analog to digital converter. A circuit selects signals depending on the value of the period of the phase clock signals to eliminate the spurious currents.
A pre-driving stage drives one or more Field Effect Transistors in a power stage driving a load. A method for measuring current flowing in the Field Effect Transistors includes: measuring drain to source voltages of the one or more Field Effect Transistor; and measuring an operating temperature of the one or more Field Effect Transistor. The current flowing in the Field Effect Transistors is measured by: calculating the respective on drain to source resistance at the operating temperature as a function of the measured operating temperature and obtaining the current value as a ratio of the respective measured drain to source voltage over the calculated drain to source resistance at the operating temperature.
G01R 17/16 - Measuring arrangements involving comparison with a reference value, e.g. bridge ac or dc measuring bridges with discharge tubes or semiconductor devices in one or more arms of the bridge, e.g. voltmeter using a difference amplifier
G01R 17/04 - Arrangements in which the value to be measured is automatically compared with a reference value in which the reference value is continuously or periodically swept over the range of values to be measured
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
G01R 19/257 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques using analogue/digital converters of the type with comparison of different reference values with the value of voltage or current, e.g. using step-by-step method
An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, each light emitting pixel having at least one subpixel with one or more light emitting diodes positioned on a substrate. The pixel further includes at least one photodetector positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
18.
MEASUREMENT SYSTEM, RELATED INTEGRATED CIRCUIT AND METHOD
A measurement system, featuring first and second capacitances, and switching, control, and measurement circuits, charges/discharges the capacitances during normal operation. The switching and control circuits periodically connect a first terminal of the first capacitance to a first voltage and a reference voltage, and a first terminal of the second capacitance to a second voltage and the reference voltage. The second terminal of the first capacitance and the second terminal of the second capacitance are connected to the input terminals of the differential integrator, the charge difference between the capacitances being transferred to the differential integrator. A comparator triggers when the output signal of the differential integrator exceeds the hysteresis threshold of the comparator. Two decoupling capacitances are connected between the input of the comparator and the output of the differential integrator, and two reset phases are used to store various disturbances to these decoupling capacitances, improving precision.
A back electromotive force (BEMF) of a spindle motor in a hard disk drive is rectified and exploited to drive a voice coil motor (VCM) in the hard disk drive to retract the heads of the hard disk drive to a park position. The VCM is driven in a discontinuous mode comprising an alternation of VCM on-times and VCM off-times. Rectifying the BEMF of the spindle motor is discontinued before the end of the VCM off-times, Toff with the spindle motor brought into a brake condition wherein the spindle motor is short-circuited and the spindle BEMF forces currents through the windings of the spindle motor. The spindle current is thus pre-charged and made ready to cope with a VCM current request at the next VCM on-time.
A system, for use in providing media access control (MAC)/router/switch/gateway features in an on-board communication network in a vehicle, includes MAC controllers configured to provide a MAC port layer controlling exchange of information over a data link, virtual machine (VM) bridge blocks configured to provide a MAC frame layer interfacing with System-on-Chip VMs, a software (SW) Ethernet port configured to receive from a host programming/configuration information for the system, a local memory controller configured to facilitate the MAC controllers, the VM bridge blocks and the SW Ethernet port in cooperating with a local memory (LMEM), and queue handlers configured to provide queue management for the MAC controllers, the VM bridge blocks and the SW Ethernet port, during cooperation with the LMEM via the local memory controller.
An integrated circuit includes a memory and processing circuitry. The memory stores an Elementary File Test (EFT) file including a record storing information to update a target elementary file (TGF) in a file system of the EFT. The stored information includes a file path identifier identifying a position of the TGF in the file system of the EFT file, which is a concatenation of a parent file identifier followed by an identifier of the TGF, a first length indicator of a first type of data, the data of the first type, a second length indicator to indicate a length of a second type of data, and the data of the second type. The processing circuitry, in operation, identifies the TGF based on the file path identifier and updates the content of the TGF to include the first data and one or more instances of the second data.
The present disclosure is directed to a wearable electronic device, such as a watch, that includes one or more optical sensors. In order to determine accuracy of measurements by the optical sensors, the device detects whether or not the optical sensors are in physical contact with the user's skin. The device detects a level of contact between the user's skin and the optical sensors based on electrostatic charge variation measurements, and generates a contact reliability index (CRI) based on the level of contact. Operation of the optical sensors are adjusted based on the CRI.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons
A61B 5/0205 - Simultaneously evaluating both cardiovascular conditions and different types of body conditions, e.g. heart and respiratory condition
G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
23.
DUAL-MODE CONTROL CIRCUIT FOR MICROELECTROMECHANICAL SYSTEM GYROSCOPES
The present disclosure is directed to a dual-mode control circuit for a microelectromechanical system (MEMS) gyroscope. A control circuit is coupled to a Lissajous frequency modulated (LFM) gyroscope to control amplitude of oscillation of a mass along two directions. The amplitude of oscillation is controlled by an automatic gain control (AGC) loop which allows the same amplitude of oscillation in both directions. An AGC is implemented with a combination of proportional control (P-type) and integral control (I-type) paths that maintain the correct Lissajous pattern of the oscillation of the mass. The AGC may include a dual-mode stage which is able to switch between a P-type control path and an I-type control path based on the operation of the LFM gyroscope. A fast start-up phase may be controlled by the P-type control path while the I-type path is pre-charged to be ready to use in a steady state condition.
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
One or more embodiments are directed to quad flat no-lead (QFN) semiconductor packages, devices, and methods in which one or more electrical components are positioned between a die pad of a QFN leadframe and a semiconductor die. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and at least one electrical component that has a first contact on the die pad and a second contact on the lead. A semiconductor die is positioned on the at least one electrical component and is spaced apart from the die pad by the at least one electrical component. The device further includes at least one conductive wire, or wire bond, that electrically couples the at least one lead to the semiconductor die.
In a non-volatile memory device, a memory sector is provided. The memory sector includes a plurality of tiles arranged horizontally. Each tile includes a plurality of memory cells arranged in horizontal word lines and vertical bit lines. A pre-decoder is configured to receive a set of encoded address signals to produce pre-decoding signals. A central row decoder is arranged in line with the plurality of tiles, receives the pre-decoding signals and produces level-shifted pull-up and pull-down driving signals for driving the word lines. First buffer circuits are arranged on a first side of each tile. Each of the first buffer circuits is coupled to a respective word line, receives a level-shifted pull-up driving signal and a level-shifted pull-down driving signal, and selectively pulls up or pulls down the respective word line as a function of the values of the received signals.
G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
H03K 19/0185 - Coupling arrangements; Interface arrangements using field-effect transistors only
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
Signal processing is applied to a digital audio input signal to provide an analog audio output signal using a switching converter circuit driven by a pulse-width-modulated (PWM) signal. The analog audio output signal is sensed to provide an analog feedback signal. The signal processing that is applied includes: converting the digital audio input signal to producing an analog replica; producing an analog error signal indicative of a difference between the analog replica of the digital input signal and the analog feedback signal; converting the analog error signal to produce a digital error signal; digitally filtering the digital error signal to produce a filtered digital error signal; and generating the PWM signal from the filtered digital error signal.
A controller for an electronic circuit that includes a first and a second switch is provided. The controller includes an event detector stage that receives logic electrical signals and a pulse generator circuit, which is coupled to the event detector stage and generates a dead time signal based on edges of the logic electrical signals detected by the event detector stage. The dead time signal includes pulses delimited by an edge of a first type and by a subsequent edge of a second type. A combinatorial sampling circuit generates a first and a second sampled preliminary signal. An update stage updates the values of the first and the second control signals at each pulse of the dead time signal based on the first and the second sampled preliminary signals, subsequently to the edge of the first type or the second type of the pulse of the dead time signal.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
28.
METHOD AND APPARATUS FOR MANAGING WAVEFORM DATA AND DELAYS IN A WAVEFORM GENERATOR
A signal decode circuit is coupled to a buffer for each signal channel. A memory includes a shared area configured to store waveform data sets, each waveform data set including a sequence of coded waveform values specifying waveform step states. The shared area further stores delay data sets, each delay data set including a digital delay value for each signal channel defining a delay profile. A signal pointer addresses the shared area to read one waveform data set from the memory with the sequence of coded waveform values being selectively loaded into one or more of the buffers. A delay pointer addresses the shared area to read one delay data set from the memory with the digital delay values used to control delayed actuation of the signal decode circuits to decode the sequence of coded waveform values from the buffers and generate waveform signals in accordance with the delay profile.
A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves
A61B 8/08 - Detecting organic movements or changes, e.g. tumours, cysts, swellings
G01S 7/52 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group
G01S 15/89 - Sonar systems specially adapted for specific applications for mapping or imaging
29.
SEMICONDUCTOR PACKAGE OR DEVICE WITH SEALING LAYER
The present disclosure is directed to embodiments of a conductive structure on a conductive layer, which may be a conductive damascene layer of a semiconductor device or package. The conductive damascene layer may be within a substrate of the semiconductor device or package. A crevice is present between one or more sidewalls of the conductive structure and one or more sidewalls of one or more insulating layers on the substrate and extends to a surface of the conductive layer. A sealing layer is formed in the crevice that seals the conductive layer from moisture and contaminants external to the semiconductor device or package that may enter the crevice. In other words, the sealing layer stops the moisture and contaminants from reaching the conductive layer such that the conductive layer does not corrode due to exposure to the moisture and contaminants.
The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.
G06F 1/16 - Constructional details or arrangements
G01B 7/31 - Measuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes for testing the alignment of axes
G06F 1/3231 - Monitoring the presence, absence or movement of users
G06F 1/3246 - Power saving characterised by the action undertaken by software initiated power-off
31.
SENSORIZED EARPHONE DEVICE FOR OUT-OF-EAR MEASUREMENTS
An earphone device has a casing having a measurement portion dedicated to acquisition of at least one measurement quantity with the earphone device arranged outside an ear of a subject. The earphone device is provided with at least one sensor, operatively coupled to the measurement portion within the casing for acquiring signals indicative of the measurement quantity, and a processing module that processes the signals acquired by the sensor so as to provide a processed output signal for monitoring the measurement quantity, as a function of the acquired signals. Electrical-connection elements define electrical paths within the casing in electrical connection with the sensor.
A control device for a switching voltage regulator having a switching circuit receives a set of measurement signals including a first measurement signal indicative of an output voltage of the switching voltage regulator. A burst-mode controller is configured to monitor the output voltage with respect to a first threshold and a second threshold higher than the first threshold, and to provide, in response, a burst signal. A driving-signal generation stage is configured to provide at least one switching control signal for the switching circuit based on the burst signal and the set of measurement signals. The driving-signal generation stage has a feedback module configured to provide a control signal based on the burst signal and an error signal indicative of a difference between the first measurement signal and a reference signal.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
33.
ELECTRONIC SYSTEM, INTEGRATED CIRCUIT, AND METHOD FOR GENERATING SEQUENTIAL SIGNALS
An electronic system is configured to generate a sequential logic signal. The electronic system includes a first ring oscillator including a first plurality of cascaded inverter stages. A combinational logic circuit is configured to generate the sequential logic signal by combining signals at the output terminals of at least two of the inverter stages of the first ring oscillator. The electronic system further includes a second ring oscillator including a second plurality of cascaded inverter stages. A bias current source is configured to supply the inverter stages of the second ring oscillator with a bias current, and a first voltage is generated at the inverter stages of the second ring oscillator. A voltage follower is configured to supply the inverter stages of the first ring oscillator with a second voltage corresponding to the first voltage generated at the inverter stages of the second ring oscillator.
A device includes a multiplier, an accumulator and a floating point adder. The multiplier generates a product of a first factor having a sign bit and exponent bits and a second factor having a sign bit and exponent bits. The multiplier includes a sign multiplier and a subtractor. The sign multiplier generates a product of the sign bit of the first factor and the sign bit of the second factor. The subtractor subtracts the exponent bits of the first factor from the exponent bits of the second factor. The accumulator stores a current accumulation value. The floating-point adder is coupled to the multiplier and to the accumulator, and, in operation, the adder generates an updated accumulation value based a sum of the product and the current accumulation value, and stores the updated accumulation value in the accumulator. The first factor may be a weight of a neural network.
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
35.
METHOD OF MANUFACTURING OHMIC CONTACTS OF AN ELECTRONIC DEVICE, WITH THERMAL BUDGET OPTIMIZATION
Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
Electronic device comprising: a semiconductor body, in particular of Silicon Carbide, SiC, having a first and a second face, opposite to each other along a first direction; and an electrical terminal at the first face, insulated from the semiconductor body by an electrical insulation region. The electrical insulation region is a multilayer comprising: a first insulating layer, of a Silicon Oxide, in contact with the semiconductor body; a second insulating layer on the first insulating layer, of a Hafnium Oxide; and a third insulating layer on the second insulating layer, of an Aluminum Oxide.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
MEMS ultrasonic transducer, MUT, device, comprising a semiconductor body with a first and a second main face, including: a modulation cavity extending into the semiconductor body from the second main face; a membrane body suspended on the modulation cavity and comprising a transduction membrane body and a modulation membrane body; a piezoelectric modulation structure on the modulation membrane body; a transduction cavity extending into the membrane body, the transduction membrane body being suspended on the transduction cavity; and a piezoelectric transduction structure on the transduction membrane body. The modulation membrane body has a first thickness and the transduction membrane body has a second thickness smaller than the first thickness. In use, the modulation membrane vibrates at a first frequency and the transduction membrane vibrates at a second frequency higher than the first frequency, to emit and/or receive acoustic waves at a frequency dependent on the first and the second frequencies.
B06B 1/02 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy
G01S 7/534 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group - Details of non-pulse systems
38.
WEARABLE AND PORTABLE SYSTEM AND METHOD FOR MEASURING CARDIAC PARAMETERS FOR DETECTING CARDIOPATHIES
A system for measuring cardiac parameters uses a movements sensor to generate a seismocardiographic signal and a cardiac parameters calculation unit. The cardiac parameters calculation unit provides for generating an envelope signal correlated to the seismocardiographic signal; identifies, in the envelope signal, signal segments having a repetitive pattern; identifies, among the signal segments, pairs of successive peaks such that a first peak of each pair of successive peaks is a systolic peak and a second peak of each pair of successive peaks is a diastolic peak; and calculates a systolic period and a diastolic period for each pair of successive peaks.
SiC-based MOSFET electronic device comprising: a solid body; a gate terminal, extending into the solid body; a conductive path, extending at a first side of the solid body, configured to be electrically couplable to a generator of a biasing voltage; a protection element of a solid-state material, coupled to the gate terminal and to the conductive path, the protection element forming an electronic connection between the gate terminal and the conductive path, and being configured to go from the solid state to a melted or gaseous state, interrupting the electrical connection, in response to a leakage current through the protection element greater than a critical threshold; a buried cavity in the solid body accommodating, at least in part, the protection element.
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
An integrated circuit includes a control circuit, a primary sensor device coupled to the control circuit, and a plurality of groups of secondary sensor devices coupled to the primary sensor device. The primary sensor device receives a master clock signal from the control device and outputs, to each group of secondary sensor devices, a respective secondary clock signal with a frequency lower than the primary clock signal. The primary sensor device generates primary sensor data. The primary sensor device receives secondary sensor data from each group of secondary sensor devices. The primary sensor device combines the primary sensor data and all of the secondary sensor data into a sensor data stream with a time division-multiplexing scheme and outputs the sensor data stream to the control circuit.
A system includes inertial sensors and a GPS. The system generates a first estimated vehicle velocity based on motion data and positioning data, generates a second estimated vehicle velocity based on the processed motion data and the first estimated vehicle velocity, and generates fused datasets indicative of position, velocity and attitude of a vehicle based on the processed motion data, the positioning data and the second estimated vehicle velocity. The generating the second estimated vehicle velocity includes: filtering the motion data, transforming the filtered motion data in a frequency domain based on the first estimated vehicle velocity, generating spectral power density signals, generating an estimated wheel angular frequency and an estimated wheel size based on the spectral power density signals, and generating the second estimated vehicle velocity as a function of the estimated wheel angular frequency and the estimated wheel size.
G01S 19/47 - Determining position by combining measurements of signals from the satellite radio beacon positioning system with a supplementary measurement the supplementary measurement being an inertial measurement, e.g. tightly coupled inertial
42.
CONTROLLER FOR A BUCK-BOOST SWITCHING CONVERTER WITH OVERCURRENT AND NULL-CURRENT DETECTION AND METHOD FOR CONTROLLING A BUCK-BOOST SWITCHING CONVERTER
A controller for a buck-boost switching converter, which includes an inductor and a shunt resistor and is coupled to a load which draws a load current, includes a control circuit which performs charge and discharge cycles of the inductor. A first comparator stage generates a first signal which is indicative of a direction of the resistor current during the charge and discharge cycles. A low-pass filtering circuit generates a filtered electrical quantity based on a voltage on the shunt resistor during the charge and discharge cycles. A second comparator stage generates a second signal indicative of a comparison between the filtered electrical quantity and a reference electrical quantity. A detection stage detects the occurrence of an overcurrent in the load based on the second signal.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
43.
MULTI-LEVEL PULSER CIRCUIT AND METHOD OF OPERATING A MULTI-LEVEL PULSER CIRCUIT
A multi-level pulser circuit comprises a set of first input pins for receiving respective positive voltage signals at different voltage levels, a set of second input pins for receiving respective negative voltage signals at different voltage levels, and a reference input pin configured to receive a reference voltage signal intermediate the positive voltage signals and the negative voltage signals. The circuit comprises an output pin configured to supply a pulsed output signal. The circuit further comprises control circuitry configured to selectively couple the output pin to one of the first input pins, the second input pins and the reference input pin to generate the pulsed output signal at the output pin. The control circuitry is further configured to selectively couple at least one of the second input pins and the reference input pin to the output pin during falling transitions of the pulsed output signal between two positive voltage levels, and selectively couple at least one of the first input pins and the reference input pin to the output pin during rising transitions of the pulsed output signal between two negative voltage levels.
H03K 3/027 - Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
In accordance with an embodiment, a method of measuring a load current flowing through a current measurement resistor coupled between a source node and a load node includes: measuring a first voltage across a replica resistor when a first end of the replica resistor is coupled to the source node and a second end of the replica resistor is coupled to a reference current source; measuring a second voltage across the replica resistor when the second end of the replica resistor is coupled to the source node and the first end of the replica resistor is coupled to the reference current source; measure a third voltage across the current sensing resistor; and calculating a corrected current measurement of the load current based on the measured first voltage, the measured second voltage and the measured third voltage.
A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.
ALMA MATER STUDIORUM - UNIVERSITA' DI BOLOGNA (Italy)
Inventor
D'Addato, Matteo
Elgani, Alessia Maria
Perilli, Luca
Franchi Scarselli, Eleonora
Gnudi, Antonio
Canegallo, Roberto Antonio
Ricotti, Giulio
Abstract
A circuit includes a clock input node, a first signal input node configured to receive a first modulated signal switching between a first DC voltage and a second DC voltage, a bias circuit, a first output node, a first capacitor, a second capacitor, and switching circuitry coupled to the first capacitor and the second capacitor. Control circuitry is configured to initially set the switching circuitry in a first configuration in response to the first modulated signal having the second DC voltage, thereby charging the first capacitor to the second DC voltage and charging the second capacitor to the first DC voltage, and subsequently set the switching circuitry in a second configuration in response to an edge detected in the clock signal, thereby producing the first threshold voltage at the first output node after charge redistribution taking place between the first and second capacitors.
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
47.
MICROELECTROMECHANICAL BUTTON DEVICE AND CORRESPONDING WATERPROOF USER INTERFACE ELEMENT
A microelectromechanical button device is provided with a detection structure having: a substrate of semiconductor material with a front surface and a rear surface; a buried electrode arranged on the substrate; a mobile electrode, arranged in a structural layer overlying the substrate and elastically suspended above the buried electrode at a separation distance so as to form a detection capacitor; and a cap coupled over the structural layer and having a first main surface facing the structural layer and a second main surface that is designed to be mechanically coupled to a deformable portion of a case of an electronic apparatus of a portable or wearable type. The cap has, on its first main surface, an actuation portion arranged over the mobile electrode and configured to cause, in the presence of a pressure applied on the second main surface, a deflection of the mobile electrode and its approach to the buried electrode, with a consequent capacitive variation of the detection capacitor, which is indicative of an actuation of the microelectromechanical button device.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
H03K 17/975 - Switches controlled by moving an element forming part of the switch using a capacitive movable element
48.
CONTROL CIRCUIT FOR A SWITCHING STAGE OF AN ELECTRONIC CONVERTER AND CORRESPONDING CONVERTER DEVICE
A control circuit for a switching stage of an electronic converter includes a PWM signal generator that generates a PWM signal to drive the switching stage of the electronic converter. A loop comparator circuit receives the regulated output voltage of the electronic converter and receives a sum signal from an adder circuit. The loop comparator circuit generates a comparison signal having a first or second logic value in response to the regulated output voltage reaching the sum signal or failing to reach the sum signal. The adder circuit generates the sum signal as a sum of a reference voltage and a programmable offset voltage that is generated by a programmable voltage generator based on a digital word signal. A feedback circuit is coupled to the loop comparator circuit and the PWM signal generator, and provides the digital word signal to the programmable voltage generator.
H02M 3/157 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
A device includes a local oscillator, an all-digital phase-locked loop, a digital signal generator, sampling circuitry, and an interface. The local oscillator generates a local clock signal. The all-digital phase locked loop generates a sampling control signal. The ADPLL includes a phase-error detector, a digital filter and a sigma-delta modulator. The phase detector generates a phase error signal based on a loop clock signal and a received reference signal. The digital filter generates a signal indicative of a frequency ratio between a frequency of the reference clock signal and the local clock frequency based on the phase error signal. The sigma-delta modulator generates a modulated signal based on the signal indicative of the frequency ratio. The sampling control signal is based on the modulated signal. The sampling circuitry samples digital signals generated by the digital signal generator at a sampling frequency, which is a function of the sampling control signal.
H03L 7/081 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop provided with an additional controlled phase shifter
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
50.
MEMS DEVICE WITH AN IMPROVED CAP AND RELATED MANUFACTURING PROCESS
Electronic device including: a MEMS sensor device including a functional structure which transduces a chemical or physical quantity into a corresponding electrical quantity; a cap including a semiconductive substrate; and a bonding dielectric region, which mechanically couples the cap to the MEMS sensor device. The cap further includes a conductive region, which extends between the semiconductive substrate and the MEMS sensor device and includes: a first portion, which is arranged laterally with respect to the semiconductive substrate and is exposed, so as to be electrically coupleable to a terminal at a reference potential by a corresponding wire bonding; and a second portion, which contacts the semiconductive substrate.
The present disclosure is directed to a device configured to detect whether the device is in a bag or outside of the bag. The device determines whether the device is in or outside of the bag based on distance measurements generated by at least one proximity sensor and motion measurements generated by at least one motion sensor. By using both distance measurements and motion measurements, the device is able to detect whether the device is in the bag or outside of the bag with high accuracy and robustness.
A differential piezoelectric actuator-system includes an inductor and driver-circuit having switches for transferring energy between first and second actuators and the inductor, and between a voltage-supply node and the inductor. Control circuitry determines whether a next phase in which to operate the driver-circuit is a first charging-phase or a first recovery-phase. The first charging-phase includes operating the switches in: a first sub-phase to transfer energy from the first actuator to the inductor; a second sub-phase to transfer energy from the voltage supply node to the inductor; and a third sub-phase to transfer energy from the inductor to the second actuator. The first recovery-phase includes operating the switches in: a first sub-phase to transfer energy from the first actuator to the inductor; a second sub-phase to transfer energy from the inductor to the second actuator; and a third sub-phase to transfer energy from the inductor to the voltage supply node.
H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
53.
TAGGED MEMORY OPERATED AT LOWER VMIN IN ERROR TOLERANT SYSTEM
STMicroelectronics International N.V. (Switzerland)
Inventor
Chawla, Nitin
Desoli, Giuseppe
Grover, Anuj
Boesch, Thomas
Singh, Surinder Pal
Ayodhyawasi, Manuj
Abstract
A memory array arranged as a plurality of memory cells. The memory cells are configured to operate at a determined voltage. A memory management circuitry coupled to the plurality of memory cells tags a first set of the plurality of memory cells as low-voltage cells and tags a second set of the plurality of memory cells as high-voltage cells. A power source provides a low voltage to the first set of memory cells and provides a high voltage to the second set of memory cells based on the tags.
A differential piezoelectric actuator-system includes an inductor and driver-circuit having switches for transferring energy between first and second actuators and the inductor, and between a voltage-supply node and the inductor. Control circuitry determines whether a next phase in which to operate the driver-circuit is a first charging-phase or a first recovery-phase. The first charging-phase includes operating the switches in: a first sub-phase to transfer energy from the first actuator to the inductor; a second sub-phase to transfer energy from the voltage supply node to the inductor; and a third sub-phase to transfer energy from the inductor to the second actuator. The first recovery-phase includes operating the switches in: a first sub-phase to transfer energy from the first actuator to the inductor; a second sub-phase to transfer energy from the inductor to the voltage supply node; and a third sub-phase to transfer energy from the inductor to the second actuator.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
A method for manufacturing an optical microelectromechanical device, includes forming, in a first wafer of semiconductor material having a first surface and a second surface, a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. The method continues with forming, in a second wafer, a chamber delimited by a bottom wall having a through opening, and bonding the second wafer to the first surface of the first wafer and bonding a third wafer to the second surface of the first wafer so that the chamber overlies the actuation structure, and the through opening is aligned to the suspended mirror structure, thus forming a device composite wafer. The device composite wafer is diced to form an optical microelectromechanical device.
The present disclosure is directed to pick-up state detection for an electronic device, such as a laptop. In a pick-up state, the device is picked or lifted up from a surface, such as a table. A power state of the device is adjusted in response to detecting the pick-up state. For example, the device is in a hibernate state while set on the table, and is switched to a working state in response to detecting the pick-up state.
A microelectromechanical sensor device having a sensing structure with: a substrate; an inertial mass, suspended above the substrate and elastically coupled to a rotor anchoring structure by elastic coupling elements, to perform at least one inertial movement due to a quantity to be sensed; first sensing electrodes, integrally coupled to the inertial mass to be movable due to the inertial movement; and second sensing electrodes, fixed with respect to the quantity to be sensed, facing and capacitively coupled to the first sensing electrodes to form sensing capacitances having a value that is indicative of the quantity to be sensed. The second sensing electrodes are arranged in a suspended manner above the substrate and a compensation structure is configured to move the second sensing electrodes with respect to the first sensing electrodes and vary a facing distance thereof, in the absence of the quantity to be sensed, in order to compensate for a native offset of the sensing structure.
G01P 15/125 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
58.
MICROPRISM AND MICROLENS ARRAY FOR USE IN LIDAR SYSTEM
A LIDAR optical unit includes a photonic-integrated-circuit (PIC) affixed to a carrier. The PIC includes an input coupler and an array of output couplers, with a switchable optical network connecting the input coupler to different selected ones of the array of output couplers. A laser source is mounted to the PIC adjacent the input coupler such that laser light generated by the laser source is injected into the input coupler. An optical stack is mounted to the PIC adjacent the array of output couplers to receive laser light extracted from the switchable optical network by the array of output couplers. The optical stack includes an array of microlenses positioned so that a bottom surface thereof is mounted to the PIC, and an array of microprisms is stacked on the array of microlenses so that a bottom surface thereof is mounted to a top surface of the array of microlenses.
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
The present disclosure is directed to pick-up state detection for an electronic device, such as a laptop. In a pick-up state, the device is picked or lifted up from a surface, such as a table. A power state of the device is adjusted in response to detecting the pick-up state. For example, the device is in a hibernate state while set on the table, and is switched to a working state in response to detecting the pick-up state.
G06F 3/0346 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of the device orientation or free movement in a 3D space, e.g. 3D mice, 6-DOF [six degrees of freedom] pointers using gyroscopes, accelerometers or tilt-sensors
G06F 1/3206 - Monitoring of events, devices or parameters that trigger a change in power modality
G01P 15/18 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
G06F 1/16 - Constructional details or arrangements
60.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE
Semiconductor devices of the type currently referred to as a System in a Package (SiP) and having embedded therein a transformer are produced by embedding at least one semiconductor chip in an insulating encapsulation at a first portion thereof. Over a second portion thereof at least partly non-overlapping with the first portion, a stacked structure is formed including multiple layers of electrically insulating material as well as respective patterns of electrically conductive material. The respective patterns of electrically conductive material have: a planar coil geometry for providing electrically conductive coils such as the windings of a transformer and a geometrical distribution providing electrically conductive connections to one or more semiconductor chips.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
61.
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR PRODUCTS
A semiconductor chip has a top metal layer with a passivation over an outer surface and including a first region and a second region. The passivation is fully removed from the first region and a contact layer for electrical wafer sorting probes is formed over the first region having the passivation fully removed therefrom. The passivation is initially only partly removed from the second region to protect the top met layer. Later, a remaining portion of the passivation is fully removed at the second region. Then, top metal layer at the second region provides a growth region for growing electrically conductive material over the second region.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
62.
LOW-DROPOUT VOLTAGE REGULATOR CIRCUIT AND CORRESPONDING METHOD OF OPERATION
A low-drop out voltage regulator includes a pass element arranged between an input terminal and an output terminal, a feedback network configured to produce a feedback voltage derived from an output voltage, and an error amplifier configured to drive the pass element as a function of a difference between the feedback voltage and a reference voltage. An output transistor coupled in series with the pass element is controlled by a mode selection circuit. In response to assertion of a mode selection signal, the mode selection circuit turns on the output transistor to sink a current with a controlled magnitude from the output node. In response to de-assertion of the mode selection signal, the mode selection circuit sinks a current with a controlled magnitude from a control terminal of the output transistor to turn off the output transistor at a controlled rate.
G05F 1/565 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
63.
METHOD OF OPERATING HARD DISK DRIVES AND CORRESPONDING CONTROL CIRCUIT
An embodiment method includes rectifying a back electromotive force of a spindle motor in a hard disk drive and energizing a voice coil motor in the hard disk drive using the rectified back electromotive force of the spindle motor via a voice coil motor power stage to retract a head of the hard disk drive to a park position. The head is retracted by moving the head towards the park position during a first retract phase and retaining the head in the park position during a second retract phase by applying a bias voltage to the voice coil motor power stage during a bias interval of the second retract phase. The method also includes producing a saturation signal indicative of onset of saturation in the voice coil motor power stage and controlling the bias voltage during the second retract phase.
G11B 5/54 - Disposition or mounting of heads relative to record carriers with provision for moving the head into, or out of, its operative position or across tracks
H02P 7/025 - Arrangements for regulating or controlling the speed or torque of electric DC motors the DC motors being of the linear type the DC motors being of the moving coil type, e.g. voice coil motors
64.
CONTROL CIRCUIT FOR AN ELECTRONIC CONVERTER, RELATED INTEGRATED CIRCUIT, ELECTRONIC CONVERTER AND METHOD
A control circuit for a switching stage of an electronic converter is described. The control circuit includes a driver circuit configured to generate one or more drive signals as a function of a Pulse-Width Modulation, PWM, signal and a PWM signal generator circuit configured to generate the PWM signal. A first comparator asserts a comparison signal when a feedback signal having a voltage being indicative of a current flowing through an inductance of the switching stage is greater than a reference signal. In response to a clock signal, a storage element asserts the PWM signal, whereby the clock signal indicates the duration of the switching period of the PWM signal. Conversely, in response to determining that the comparison signal is asserted, the storage element de-asserts the PWM signal. Specifically, the reference signal is generated as a function of the voltage at a capacitance. For this purpose, a further comparator asserts a further comparison signal, when a feedback signal having a voltage being indicative of an output quantity is smaller than the reference voltage. Moreover, a charge and discharge circuit charges the capacitance when the further comparison signal is de-asserted, and discharges the capacitance when the further comparison signal is asserted.
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 3/157 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
65.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, CORRESPONDING SUBSTRATE AND SEMICONDUCTOR DEVICE
A semiconductor die mounting substrate, such as a pre-molded leadframe, is provided with die pads, wherein each die pad has opposed first and second surfaces as well as tie bars projecting therefrom. Semiconductor dice are mounted at the first surface of the die pads. A molding encapsulation material surrounds the semiconductor dice mounted at the first surface of the die pads to produce semiconductor devices, with the semiconductor devices being mutually coupled via the tie bars. The tie bars are then cut transverse to their longitudinal direction at an intermediate singulation location to singulate the semiconductor devices into individual semiconductor devices. The tie bars have a hollowed-out portion with a channel-shaped cross-sectional profile at the intermediate singulation location. Easier-to-cut tie bars can be provided without impairing their stiffness in comparison with tie bars having full rectangular/square cross-sectional shapes.
A circuit includes a set of input nodes configured to be coupled to respective ones of the windings of a spindle motor in a hard disk drive to sense the voltages applied to the windings. A set of output nodes is configured to provide output signals indicative of direction of flow of the currents through the windings. Level shifters are coupled to respective input nodes in the set of input nodes and have level-shifted output nodes configured to provide down-shifted replicas of the voltages at the respective input nodes in the set of input nodes. Flip-flops have inputs coupled to respective ones of the level-shifted output nodes of the level shifters and outputs configured to provide the output signals coupled to respective output nodes.
G11B 25/04 - Apparatus characterised by the shape of record carrier employed but not specific to the method of recording or reproducing using flat record carriers, e.g. disc, card
G11B 27/36 - Monitoring, i.e. supervising the progress of recording or reproducing
67.
GAS SENSOR DEVICE FOR DETECTING GASES WITH LARGE MOLECULES
The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/02 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
68.
MICROELECTROMECHANICAL MEMBRANE TRANSDUCER WITH ACTIVE DAMPER
A microelectromechanical membrane transducer includes: a supporting structure; a cavity formed in the supporting structure; a membrane coupled to the supporting structure so as to cover the cavity on one side; a cantilever damper, which is fixed to the supporting structure around the perimeter of the membrane and extends towards the inside of the membrane at a distance from the membrane; and a damper piezoelectric actuator set on the cantilever damper and configured so as to bend the cantilever damper towards the membrane in response to an electrical actuation signal.
A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
A method and apparatus for performing dynamic current scaling of an input current of a voltage regulator are provided. The method and apparatus allow tuning current consumption in various applications, calculating a duration of an activity phase in which various algorithms are executed and activating dynamic current scaling of a regulator if the activity duration is shorter than a programmable threshold. A controller receives a threshold for an activity duration and a window size in which to evaluate the activity duration.
The present disclosure is directed to micro-electromechanical system (MEMS) accelerometers that are configured for a user interface mode and a true wireless stereo (TWS) mode of an audio device. The accelerometers are fabricated with specific electromechanical parameters, such as mass, stiffness, active capacitance, and bonding pressure. As a result of the specific electromechanical parameters, the accelerometers have a resonance frequency, quality factor, sensitivity, and Brownian noise density that are suitable for both the user interface mode and the TWS mode.
G01P 15/125 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
G01P 15/18 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
72.
CONTROL METHOD AND CIRCUIT FOR PHASE SHIFT REGULATION OF INTERLEAVED CONVERTERS AT VARIABLE SWITCHING FREQUENCY
Uncompensated upper and lower reference-currents are generated for first and second branches of a high-frequency half-bridge within an interleaved-totem-pole PFC. A first control-signal for the first branch is generated from comparison between an inductor-current and uncompensated reference-currents for the first branch, a first timing-reference is generated from the first control-signal from a number of active branches, a compensated upper reference-current is generated for the second branch by adding a first compensation-current to the uncompensated upper reference-current for the second branch, a compensated lower reference-current is generated for the second branch by subtracting the first compensation-current from the uncompensated lower reference-current for the second branch, a second control-signal is generated for the second branch from the compensated reference-currents for the second branch, a first timing-difference is generated from a phase-difference between the first and second control-signals, and the first compensation-current is generated from a difference between the first timing-reference and timing-difference.
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
73.
Waveform generator using a waveform coding scheme for both long states and toggle states
A memory includes a sequence of memory locations storing a corresponding sequence of state codes that specifying the shape of a waveform. The sequence of state codes is read from the memory and decoded by a long and toggle decoder circuit. The decoding operation generates a sequence of signal codes. When the state code is a long code, the sequence of signal codes includes same signal codes corresponding to a signal level of the waveform. When the state code is a toggle code, the sequence of signal codes includes a first signal code corresponding to one signal level of the waveform and a second signal code corresponding to another signal level of the waveform. A signal decode circuit then decodes the signal codes in the sequence of signal codes to generate the waveform for output which includes the signal levels corresponding to the decoded signal codes.
Disclosed herein is a micro-electro-mechanical mirror device having a fixed structure defining an external frame delimiting a cavity, a tiltable structure extending into the cavity, a reflecting surface carried by the tiltable structure and having a main extension in a horizontal plane, and an actuation structure coupled between the tiltable structure and the fixed structure. The actuation structure is formed by a first pair of actuation arms causing rotation of the tiltable structure around a first axis parallel to the horizontal plane. The actuation arms are elastically coupled to the tiltable structure through elastic coupling elements and are each formed by a bearing structure and a piezoelectric structure. The bearing structure of each actuation arm is formed by a soft region of a first material and the elastic coupling elements are formed by a bearing layer of a second material, the second material having greater stiffness than the first material.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
75.
HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUFACTURING PROCESS
An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.
Disclosed herein is a system including a power transistor having a first conduction terminal coupled to a supply node, a second conduction terminal coupled to an output node, and a control terminal controlled by a drive signal. The system further includes a driver configured to receive an input voltage from an external component and generate the drive signal based thereupon, and a sense circuit. The sense circuit is configured to, when the power transistor is powering a load coupled to the output node: detect whether the power transistor has entered an overload condition, and if so, determine a duration of time that the power transistor is in the overload condition; and assert a diagnostic signal in response to the duration of time being outside of a time window.
G05F 1/573 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
77.
INTEGRATED SENSOR AND METHOD OF TIMING MONITORING IN AN INTEGRATED SENSOR
The integrated sensor has a clock which provides a clock signal having a clock frequency; a digital detector which detects a power grid signal and generates a reference digital signal indicative of the power grid signal and having a sample rate which is a function of the clock frequency; and a timing monitoring stage which receives the reference digital signal and a nominal signal indicative of a nominal timing of the reference digital signal. The timing monitoring stage also compares the reference digital signal with the nominal signal and, in response, provides an error signal indicative of a timing error between the reference digital signal and the nominal signal.
A half bridge switching power stage includes high/low side switches driven in response to a cycle-by-cycle protected driving signal derived from a PWM signal. Signals indicative of detected over-currents at said high/low side switches are processed to output the cycle-by-cycle protected driving signal, when the signal indicative of the detected over-current indicates, during a time interval within which the high/low side switch is turned on, that current flowing in the turned on high/low side switch crosses a given threshold, as an inverted PWM signal by turning off the turned on high/low side switch, and otherwise outputting said cycle-by-cycle protected driving signal as a not inverted PWM signal. An anomaly detection circuit receives the signals indicative of the over-current and switches off both the high/low side switches when an anomaly is detected in a pattern of over-current events in the signals indicative of the over-current.
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/157 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H03F 3/217 - Class D power amplifiers; Switching amplifiers
79.
DETECTION STRUCTURE FOR A MEMS ACCELEROMETER HAVING IMPROVED PERFORMANCES AND MANUFACTURING PROCESS THEREOF
The detection structure for a MEMS accelerometer is formed by a substrate; a first movable mass and a second movable mass which extend at a distance from each other, suspended on the substrate and which are configured to undergo a movement, with respect to the substrate, in response to an acceleration. The detection structure also has a first movable electrode integral with the first movable mass; a second movable electrode integral with the second movable mass; a first fixed electrode integral with the substrate and configured to form, with the first movable electrode, a first variable capacitor; and a second fixed electrode integral with the substrate and configured to form, with the second movable electrode, a second variable capacitor. The detection structure has an insulation region, of electrically insulating material, which is suspended on the substrate and extends between the first movable mass and the second movable mass.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
80.
MEMS DEVICE COMPRISING A DEFORMABLE STRUCTURE AND MANUFACTURING PROCESS OF THE MEMS DEVICE
A MEMS device comprising: a semiconductor body defining a main cavity and forming an anchorage structure; and a first deformable structure having a first end and a second end that are opposite to one another along a first axis, the first deformable structure being fixed to the anchorage structure via the first end so as to be suspended over the main cavity. The second end is configured to oscillate, with respect to the anchorage structure, along a second axis. The first deformable structure comprises a main body having a first outer surface and a second outer surface, and a piezoelectric structure, which extends over the first outer surface. The main body comprises a bottom portion and a top portion that delimit along the second axis a first buried cavity aligned with the piezoelectric structure along the second axis, wherein a maximum thickness of the top portion of the main body along the second axis is smaller than a minimum thickness of the bottom portion of the main body along the second axis.
A power MOSFET device includes a semiconductor body having a first main surface. The semiconductor body includes an active area facing the first main surface. The power MOSFET device includes an isolated-gate structure, which extends over the active area and includes a gate-oxide layer, which is made of insulating material and extends over the first main surface, and a gate region buried in the gate-oxide layer so as to be electrically insulated from the semiconductor body. The gate region includes a gate layer of polysilicon and at least one first silicide electrical-modulation region and one second silicide electrical-modulation region, which extend in the gate layer so as to face a top surface of the gate layer and to be arranged alongside one another and spaced apart from one another in a first plane.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
A stator for an electric actuator or motor, including: a solid body; a ferromagnetic core region between the layers of semiconductor material, electrically insulated from the layers of semiconductor material; a plurality of conductive through vias through the solid body; a first plurality of conductive strips, which extend parallel to one another above the core; and a second plurality of conductive strips, which extend parallel to one another above the core and opposite to the first plurality of conductive strips; wherein the first plurality of conductive strips, the plurality of conductive through vias, and the second plurality of conductive strips form a winding or coil of the stator.
H02K 15/02 - Methods or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies
H02K 15/00 - Methods or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines
83.
PROBES FOR TESTING INTEGRATED ELECTRONIC CIRCUITS AND CORRESPONDING PRODUCTION METHOD
Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.
STMicroelectronics International N.V. (Switzerland)
Inventor
De Vita, Antonio
Boesch, Thomas
Desoli, Giuseppe
Abstract
A convolutional accelerator includes a feature line buffer, a kernel buffer, a multiply-accumulate cluster, and iteration control circuitry. The convolutional accelerator, in operation, convolves a kernel with a streaming feature data tensor. The convolving includes decomposing the kernel into a plurality of sub-kernels and iteratively convolving the sub-kernels with respective sub-tensors of the streamed feature data tensor. The iteration control circuitry, in operation, defines respective windows of the streamed feature data tensors, the windows corresponding to the sub-tensors.
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
85.
DC-DC CONVERTER CIRCUIT, CORRESPONDING METHOD OF OPERATION AND METHOD OF TRIMMING A DC-DC CONVERTER CIRCUIT
A DC-DC boost converter includes an input receiving an input voltage and an output producing an output voltage. A switching stage is formed by a low-side transistor arranged between a switching node and a ground node, and a high-side transistor arranged between the switching node and the output. The high-side transistor includes a body diode having an anode coupled to the switching node and a cathode coupled to the output. The converter is controlled in an asynchronous operation mode where the low-side transistor is driven alternately to a conductive state and a non-conductive state, and the high-side transistor is driven steadily to a non-conductive state. A variable load circuit is selectively coupled between the two output terminals when the converter is in the asynchronous operation mode in order to sink a load current having a value that is a function of a value of the input voltage.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
86.
METHOD AND APPARATUS FOR SENSING INDUCTOR INPUT/OUTPUT CURRENT IN A DC-DC CONVERTER CIRCUIT
A switching regulator circuit has a switching transistor actuated during a switching on phase of a duty cycle. The current flowing through an inductor of the switching regulator circuit is determined from sensing a transistor current flowing through the switching transistor during switching on phase and selectively charging a capacitor of a switched capacitor circuit dependent on a current sense signal during the switching on phase.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/07 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
87.
SEMICONDUCTOR DEVICE AND CORRESPONDING METHOD OF MANUFACTURE
Disclosed herein is a method for manufacturing a semiconductor product package. The method includes arranging a leadframe with one or more leads such that each lead has an inner end facing a portion of a die-pad, attaching a semiconductor chip to the die-pad, attaching a first electrically conductive mass to the die-pad such that it is aligned with the inner end of a lead protruding over the die-pad, attaching an electrical component to the first electrically conductive mass such that a longitudinal axis of the electrical component is arranged traverse to the die-pad, and coupling a second electrically conductive mass between a termination of the electrical component and the inner end of the lead.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
In an embodiment, a phase circuit includes: a bidirectional output stage configured to be coupled between a first battery and a second battery; a memory configured to store a number of active phases, and an identifier; and a synchronization circuit configured to receive a first clock signal and determine a start time of a switching cycle of the bidirectional output stage based on the number of active phases, the identifier, and the first clock signal, where the phase circuit is configured to control the timing of the switching of the bidirectional output stage based on the start time.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
B60L 53/22 - Constructional details or arrangements of charging converters specially adapted for charging electric vehicles
B60L 58/20 - Methods or circuit arrangements for monitoring or controlling batteries or fuel cells, specially adapted for electric vehicles for monitoring or controlling batteries of two or more battery modules having different nominal voltages
89.
MEMS GYROSCOPE WITH ENHANCED ROBUSTNESS AGAINST VIBRATIONS AND REDUCED DIMENSIONS
MEMS gyroscope, having a first movable mass configured to move with respect to a fixed structure along a first drive direction and along a first sense direction, transverse to the first drive direction; a first drive assembly, coupled to the first movable mass and configured to generate a first alternate drive movement; a first drive elastic structure, coupled to the first movable mass and to the first drive assembly, rigid in the first drive direction and compliant in the first sense direction; a second movable mass, configured to move with respect to the fixed structure in a second drive direction parallel to the first drive direction and in a second sense direction parallel to the first sense direction; a second drive assembly, coupled to the second movable mass and configured to generate a second alternate drive movement in the second drive direction; and a second drive elastic structure, coupled to the second movable mass and to the second drive assembly, rigid in the second drive direction and compliant in the second sense direction.
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.
Provided is a control device is for a switching voltage regulator having a switching circuit. The control device receives input and output voltages of the switching circuit and a measurement signal indicative of a current of the switching circuit. The control device has: a feedback module that detects an error signal indicative of a difference between the output voltage and a nominal voltage, and provides a control signal as a function of the error signal; a threshold-correction module that provides offset and ramp signals; and a driving-signal generation module coupled to the feedback and threshold-correction modules, which receives the measurement signal, compares the measurement signal with a threshold and, in response, provides a modulated signal for driving the switching circuit. The threshold is a function of the control, offset and ramp signals. The threshold-correction module provides the offset signal as a function of the input or output voltages.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
92.
POWER MODULE FOR HALF-BRIDGE CIRCUIT WITH SCALABLE ARCHITECTURE AND IMPROVED LAYOUT
A power module includes a support, a first control contact area on the support, a second control contact area on the support, a first electronic power device, a second electronic power device, a first clip, a second clip, a third clip, and a package embedding the support, the first and the second electronic power devices as well as partially the first, the second and the third clips. The first electronic power device has a first conduction pad electrically coupled to the first clip, a second conduction pad electrically coupled to the third clip, and a control pad coupled to the first control contact area. The second electronic power device has a first conduction pad electrically coupled to the third clip, a second conduction pad electrically coupled to the second clip, and a control pad coupled to the second control contact area.
A power MOSFET device includes an active area accommodating a first body region and a second body region having a first and, respectively, a second conductivity value. The second value is higher than the first value. A first channel region is disposed in the first body region between a first source region and a drain region, and the first channel region has and having a first channel length. A second channel region is disposed in the second body region between a second source region and the drain region, and the second channel region has and having a second channel length smaller than the first channel length. A first device portion, having a first threshold voltage, includes the first channel region, and a second device portion, having a second threshold voltage higher than the first threshold voltage, includes the second channel region.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 21/765 - Making of isolation regions between components by field-effect
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A signal processing circuit includes a filter generating a quantizer input signal from a noise shaping input signal and a quantizer output signal. A quantizer divides the quantizer input signal by a scaling factor to produce a noise shaping output signal and multiplies the noise shaping output signal by the scaling factor to produce the quantizer output signal. Receiver circuitry scales the quantizer output signal by a second scaling factor. A dynamic range optimization circuit compares a current value of the noise shaping input signal to a threshold value, lowers or raises the scaling factor in response to the comparison, and proportionally lowers or raises the scaling factor such that a ratio between the scaling factor and second scaling factor remains substantially constant.
An audio device includes a gain step selection circuit that receives a different requested gain value and an associated requested step size from each of a plurality of sources, compares each requested gain value to a same feedback gain value and generates a polarity based thereupon, performs step polarization on each requested step size as a function of the generated polarity therefor to thereby generate a plurality of step values, and outputs a least of the plurality of step values as an output step value. An accumulator circuit generates a current input gain value based upon the output step value and the feedback gain value, and then updates the feedback gain value to be equal to the current input gain value. A normalizing circuit multiplies an input data value by the current input gain value and applies a truncation function to a result thereof to produce an output data value.
STMicroelectronics International N.V. (Switzerland)
Inventor
Rossi, Michele
Boesch, Thomas
Desoli, Giuseppe
Abstract
A convolutional accelerator includes a feature line buffer, a kernel buffer, a multiply-accumulate cluster, and mode control circuitry. In a first mode of operation, the mode control circuitry stores feature data in a feature line buffer and stores kernel data in a kernel buffer. The data stored in the buffers is transferred to the MAC cluster of the convolutional accelerator for processing. In a second mode of operation the mode control circuitry stores feature data in the kernel buffer and stores kernel data in the feature line buffer. The data stored in the buffers is transferred to the MAC cluster of the convolutional accelerator for processing. The second mode of operation may be employed to efficiently process 1×N kernels, where N is an integer greater than or equal to 1.
A switching circuit includes first and second half bridges supplying an electrical load via filter networks. During alternate switching sequences a first transistor pair (high-side in one half bridge and low-side in the other half bridge) is switched to a non-conductive state, and a second transistor pair (high-side in the other half bridge and low-side in the one half bridge) is switched to a conductive state. A current flow line is provided by an inductance, a first switch and a second switch between outputs of the half bridges. In a medium-high power mode, the first and second switches are in the conductive state between switching the first pair of transistors to the non-conductive state and the second pair of transistors to the conductive state. In a low or quiescent power mode, switching the first and second switches to the conductive state is refrained due to application of a longer delay.
A microelectromechanical device has a first tiltable mirror structure extending in a horizontal plane defined by first and second horizontal axes and includes a fixed structure defining a frame delimiting a cavity, a tiltable element carrying a reflecting region, elastically suspended above the cavity having first and second median axes of symmetry, elastically coupled to the frame by first and second coupling structures on opposite sides of the second horizontal axis. The first tiltable mirror structure has a driving structure coupled to the tiltable element to cause rotation around the first horizontal axis. The first tiltable mirror structure is asymmetrical with respect to the second horizontal axis and has, along the first horizontal axis, a first extension on a first side of the second horizontal axis, and a second extension greater than the first extension, on a second side of the second horizontal axis opposite to the first side.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, with each light emitting pixel including at least one subpixel formed by one or more light emitting diodes positioned on a substrate. At least one photodetector is positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
A semiconductor device comprises at least one semiconductor die electrically coupled to a set of electrically conductive leads, and package molding material molded over the at least one semiconductor die and the electrically conductive leads. At least a portion of the electrically conductive leads is exposed at a rear surface of the package molding material to provide electrically conductive pads. The electrically conductive pads comprise enlarged end portions extending at least partially over the package molding material and configured for coupling to a printed circuit board.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
