Newport Fab, LLC

États‑Unis d’Amérique

 
Quantité totale PI 161
Rang # Quantité totale PI 7 827
Note d'activité PI 2,8/5.0    110
Rang # Activité PI 6 337
Parent Jazz Semiconductor, Inc.

Brevets

Marques

161 0
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Dernier brevet 2023 - Field effect transistors with re...
Premier brevet 1982 - Ion etching process with minimiz...

Derniers inventions, produits et services

2022 Invention Method for manufacturing body-source-tied soi transistor. A semiconductor-on-insulator (SOI) tran...
Invention Field effect transistors with reduced leakage current. A field effect transistor (FET) includes a...
2021 Invention Discrete and monolithic phase-change material (pcm) radio frequency (rf) switches with sheet of t...
2020 Invention Nickel silicide in bipolar complementary-metal-oxide-semiconductor (bicmos) device and method of ...
Invention Body-source-tied semiconductor-on-insulator (soi) transistor. A semiconductor-on-insulator (SOI) ...
Invention Power handling improvements for phase-change material (pcm) radio frequency (rf) switch circuits....
Invention Method for fabrication of germanium photodiode with silicon cap. There are disclosed herein vario...
Invention Method for rapid testing of functionality of phase-change material (pcm) radio frequency (rf) swi...
Invention Capacitive and ohmic terminals in a phase-change material (pcm) radio frequency (rf) switch. A ra...
Invention Semiconductor structure having group iii-v chiplet on group iv substrate and cavity in proximity ...
Invention Fabrication of semiconductor structure having group iii-v device on group iv substrate with separ...
Invention Structure and method for process control monitoring for group iii-v devices integrated with group...
Invention Method of tuning a radio frequency (rf) module including a non-volatile tunable rf filter. In tun...
Invention High-yield tunable radio frequency (rf) filter with auxiliary capacitors and non-volatile rf swit...
Invention Semiconductor structure having group iii-v device on group iv substrate. A semiconductor structur...
Invention Semiconductor structure having group iii-v device on group iv substrate and contacts with liner s...
Invention Semiconductor structure having group iii-v device on group iv substrate and contacts with precurs...
Invention Width-wise segmented slot contacts for improving performance in phase-change material (pcm) radio...
Invention Length-wise segmented slot contacts for improving performance in phase-change material (pcm) radi...
2019 Invention Uniform plate slot contacts for improving performance in phase-change material (pcm) radio freque...
Invention Phase-change material (pcm) rf switch with top metal contact to heating element. In fabricating a...
Invention Phase-change material (pcm) rf switch having contacts to pcm and heating element. In fabricating ...
Invention Phase-change material (pcm) rf switch with contacts to pcm and heating element. In fabricating a ...
Invention Method for fabricating contacts in a phase-change material (pcm) rf switch having a heating eleme...
Invention Semiconductor structure having through-substrate via (tsv) in porous semiconductor region. A semi...
Invention Phase-change material (pcm) radio frequency (rf) switch. A radio frequency (RF) switch includes a...
Invention High reliability phase-change material (pcm) radio frequency (rf) switch using trap-rich region. ...
Invention Phase-change material (pcm) radio frequency (rf) switches with trench metal plugs for rf terminal...
Invention Phase-change material (pcm) radio frequency (rf) switches with capacitively coupled upper portion...
Invention Phase-change material (pcm) radio frequency (rf) switches with capacitive couplings between lower...
Invention Pcm rf switch with pcm contacts having slot lower portions. In fabricating a radio frequency (RF)...
Invention Using a shared material for fabrication of a phase-change material (pcm) switch and a resonator. ...
Invention Bonded two-die device including an integrated circuit (ic) die and a phase-change material (pcm) ...
Invention Semiconductor structure having porous semiconductor segment for rf devices and bulk semiconductor...
Invention Semiconductor structure having porous semiconductor layer for rf devices. A semiconductor structu...
Invention Integrated optical/electrical probe card for testing optical, electrical, and optoelectronic devi...
Invention Read out integrated circuit (roic) for rapid testing and characterization of conductivity skew of...
Invention Integrated semiconductor device including rf isolation regions under phase-change material (pcm) ...
Invention Read out integrated circuit (roic) for rapid testing of functionality of phase-change material (p...
Invention Anode up—cathode down silicon and germanium photodiode. There are disclosed various implementatio...
Invention Radio frequency (rf) switch with improved power handling. OFF of the RF transistor. The RF transi...
Invention Semiconductor-on-insulator (soi) device with reduced parasitic capacitance. A semiconductor-on-in...
Invention Radio frequency (rf) module using a tunable rf filter with non-volatile rf switches. In tuning a ...
Invention Radio frequency (rf) filtering using phase-change material (pcm) rf switches. In a first approach...
Invention Semiconductor chips and systems having phase-change material (pcm) switches integrated with micro...
Invention Silicon-on-insulator (soi) die including a light emitting layer pedestal-aligned with a light rec...
Invention Fabrication of semiconductor device using a shared material in a phase-change material (pcm) swit...
Invention Array architecture for large scale integration of phase-change material (pcm) radio frequency (rf...
Invention Germanium photodiode with silicon cap. There are disclosed herein various implementations of a ph...
2018 Invention Silicon nitride hard mask for epitaxial germanium on silicon. A germanium-on-silicon photodetecto...