The present disclosure provides a coil device that can be reduced in height, has a small installation area of a case, and is excellent in heat dissipation. A coil device according to the present disclosure includes: a device body including a bobbin and a coil unit of a wire wound around the bobbin; a terminal block arranging a lead portion drawn out from a wire of the coil unit thereon; and a case capable of accommodating the device body. The case includes a support arm extending outside the case, and the terminal block is held by the support arm.
A microfluidic device and a method for flow control of cells or particles in a microfluidic channel are disclosed. The microfluidic device may include a substrate having an outlet channel. The microfluidic device may also include a microfluidic channel arranged on the substrate such that an outlet of the microfluidic channel is positioned above the outlet channel. The microfluidic device may further include a set of piezoelectric actuators arranged above the outlet channel and adjacent to the outlet, the set of piezoelectric actuators configured to eject a portion of a fluid out of the microfluidic channel via the outlet.
Provided are: a negative electrode for which it is possible to reduce irreversible capacity in a charge-discharge cycle and to improve charging and discharging efficiency; and an all-solid-state battery provided with the negative electrode. The negative electrode is for a battery comprising a negative electrode current collector and a negative electrode composite material layer formed on one surface of the negative electrode current collector. The negative electrode composite material layer has a negative electrode active material and a solid electrolyte material. The solid electrolyte material is a compound represented by formula (1). The amount of conductive carbon material in the constitution of the negative electrode composite material layer is 3 mass% or less. Drawing_references_to_be_translated:
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
A magnetic sensor includes an MR element. The MR element includes a free layer. The free layer has a first surface having a shape that is long in one direction and a second surface located opposite the first surface, and has a thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first edge and a second edge located at both lateral ends of the first surface. In a given cross section, the thickness at the first edge is smaller than the thickness at a predetermined point on the first surface between the first edge and the second edge.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetic sensor includes: a sensor chip having magnetic layers magnetically coupled to each other through a magnetic gap and a magnetic sensing element disposed on a magnetic path formed by the magnetic gap; an external magnetic member magnetically coupled to one of the magnetic layer 21; and a measuring current coil wound around the external magnetic member and through which a current for generating a magnetic field to be measured flows. The magnetic sensing element 31 and the magnetic layers are thus integrated in the sensor chip, so that the magnetic gap can be designed to be very small in width, and a leakage magnetic field can be applied in large amounts to the magnetic sensing element. Thus, even when the current I flowing in the measuring current coil is weak, a magnetic field generated by the current I can be detected with high sensitivity.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a first layer and a second layer, and also includes first and second inclined surfaces formed across the first layer and the second layer. Each of the first and second MR elements includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization pinned layer and the free layer of the second MR element are disposed on the second inclined surface.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A composite particle of the present invention includes an inorganic particle and a graphene oxide particle that coats at least a part of the inorganic particle, and the graphene oxide particle is a modified graphene oxide particle having a surface modified with a hydrocarbon group optionally having a substituent.
C09C 3/00 - Traitement, en général, de substances inorganiques, autres que des charges fibreuses, pour améliorer leurs propriétés de pigmentation ou de charge
C01B 21/064 - Composés binaires de l'azote avec les métaux, le silicium ou le bore avec le bore
C08K 9/06 - Ingrédients traités par des substances organiques par des composés contenant du silicium
C09C 1/00 - Traitement de substances inorganiques particulières, autres que des charges fibreuses ; Préparation du noir de carbone
C09C 1/02 - Composés du magnésium ou des métaux alcalino-terreux
A magneto resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and a buffer layer. The nonmagnetic layer is between the first ferromagnetic layer and second ferromagnetic layer. The buffer layer is in contact with the first ferromagnetic layer. The first ferromagnetic layer contains a Heusler alloy containing Co. The buffer layer contains at least a first atom, a second atom, and a third atom other than Co as main components. The buffer layer does not contain Co or contains Co at a proportion less than a compositional proportion of the first atom, the second atom, and the third atom. In a case where an atomic radius of any one atom of the first atom, the second atom, and the third atom is taken as a reference, an atomic radius of another atom thereof is 95% or less or 105% or more of the reference.
H01L 43/08 - Résistances commandées par un champ magnétique
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
10.
DEVICES AND METHODS FOR FLOW CONTROL IN A MICROFLUIDIC SYSTEM
A microfluidic device and a method for flow control of cells or particles in a microfluidic channel are disclosed. The microfluidic device may include a substrate having an outlet channel. The microfluidic device may also include a microfluidic channel arranged on the substrate such that an outlet of the microfluidic channel is positioned above the outlet channel. The microfluidic device may further include a set of piezoelectric actuators arranged above the outlet channel and adjacent to the outlet, the set of piezoelectric actuators configured to eject a portion of a fluid out of the microfluidic channel via the outlet.
B01L 3/00 - Récipients ou ustensiles pour laboratoires, p.ex. verrerie de laboratoire; Compte-gouttes
H10N 30/03 - Assemblage de dispositifs incluant des parties piézo-électriques ou électrostrictives
H10N 30/04 - Traitements afin de modifier une propriété piézo-électrique ou électrostrictive, p.ex. les caractéristiques de polarisation, de vibration ou par réglage du mode
11.
CURED PRODUCT FOR LITHIUM ION SECONDARY BATTERIES, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERIES, AND LITHIUM ION SECONDARY BATTERY
This cured product for lithium ion secondary batteries comprises water-soluble polymers, a crosslinking agent and cellulose nanofibers. The crosslinking agent crosslinks the water-soluble polymers different from each other, or the water-soluble polymers and the cellulose nanofibers. If measured by means of wide-angle X-ray scattering (WAXS) using a CuKα ray, the diffraction angle 2θ has a peak within the range of 16° to 21°. The half-value width of the peak is 5.5° or less.
C08L 29/04 - Alcool polyvinylique; Homopolymères ou copolymères d'esters partiellement hydrolysés d'alcools non saturés avec des acides carboxyliques saturés
C08L 33/02 - Homopolymères ou copolymères des acides; Leurs sels métalliques ou d'ammonium
C08L 101/14 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par des propriétés physiques, p.ex. anisotropie, viscosité ou conductivité électrique les composés macromoléculaires étant solubles dans l'eau ou gonflables dans l'eau, p.ex. gels aqueux
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
12.
MAGNETIC SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A magnetic sensor device includes a stacked structure including a sensor substrate and a sensor element circuitry. The sensor substrate has a surface and a perimeter. The sensor element circuitry is provided on the surface of the sensor substrate, has a perimeter, and includes one or more magnetic sensor elements. As viewed in a plane parallel to the surface, a portion or all of the perimeter of the sensor element circuitry is located at a position different from a position of the perimeter of the sensor substrate.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A high-voltage feedthrough capacitor includes: a capacitor including an element body in which a through hole extending is formed, and a first electrode and a second electrode disposed facing each other on the element body; a feedthrough conductor inserted through the through hole and electrically connected to the first electrode; a grounding fitting electrically connected to the second electrode; and a first case and a second case. The element body includes: a first end face and a second end face; a first protruding part in which the through hole opens, the first protruding part being provided on the first end face; and a second protruding part in which the through hole opens, the second protruding part being provided on the second end face. The first case is attached to the first protruding part. The second case is attached to the second protruding part.
This all-solid-state battery comprises an outer case body, and, inside the outer case body: a laminate in which a positive electrode active material layer, a solid-state electrolyte layer, and a negative electrode active material layer are laminated in the stated order; a positive electrode current collector and a negative electrode current collector that sandwich the laminate in the lamination direction; an insulating sheet that is positioned between the positive electrode current collector and the negative electrode current collector, and is positioned in an in-plane direction relative to the laminate; a first adhesive sheet that is positioned between the insulating sheet and the positive electrode current collector, the first adhesive sheet bonding the insulating sheet and the positive electrode current collector in at least a portion thereof; and a second adhesive sheet that is positioned between the insulating sheet and the negative electrode current collector, the second adhesive sheet bonding the insulating sheet and the negative electrode current collector in at least a portion thereof. The laminate and the outer case body are in communication with each other.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
A coil component includes a coil configured of a winding, an exterior body provided to cover the coil, and a terminal part configured to be continuous with the winding. A proximal end portion of the terminal part is buried in the exterior body. A distal end portion ahead of the proximal end portion is bent from the proximal end portion and located outside a mounting surface of the exterior body along the mounting surface.
H01F 41/076 - Formation de prises ou de bornes lors de l’enroulement, p.ex. par enveloppement ou par brasage du fil sur les broches, ou en formant directement des bornes à partir du fil
An electronic component includes a component body, a metal terminal, and a bonding material. The component body includes an element body and an external electrode. The metal terminal includes a first main surface and a second main surface, and a side surface. The bonding material electrically and physically connects the external electrode and the metal terminal. The metal terminal includes a first metal layer including the first main surface, a second metal layer including the second main surface, and a terminal body including the side surface. The terminal body is exposed at the side surface, and the first metal layer and the second metal layer are separated from each other on the side surface. Each of the first metal layer and the second metal layer includes a Ni plated layer. The terminal body includes Cu. The bonding material includes solder.
Disclosed herein is a coil component that includes a coil part embedded in a magnetic element body. The coil part has a structure in which plural interlayer insulating films and plural conductor layers having a coil pattern are alternately stacked. At least one of the conductor layers has a clearance area having no coil pattern and extending radially outward from a center axis of the coil part. The magnetic element body includes a first magnetic resin layer provided in an inner diameter area of the coil part, a second magnetic resin layer provided in a radially outside area of the coil part, and a fifth magnetic resin layer filled in the clearance area and contacting the first and second magnetic resin layers.
A cylindrical battery gasket (32) has insulation properties and is to be fitted with a sealing body (24) for sealing an opening of a bottomed exterior can (10) for a cylindrical battery. The gasket has a bottom part, and a cylindrical circumferential wall rising upwardly from a peripheral portion of the bottom part. An inclined surface (32A) is provided to the entire circumference of the outer circumference portion of the gasket in a manner such that the outer diameter of the circumferential wall increases upward and becomes larger than the inner diameter of an opening end part (10A) of the exterior can. The circumferential wall has a shape in which the thickness of the wall gradually increases toward the upper portion of the wall.
H01M 50/184 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie Éléments de scellement caractérisés par leur forme ou leur structure
H01M 50/107 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p.ex. ronde ou elliptique
H01M 50/152 - Couvercles caractérisés par leur forme pour des cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/167 - Couvercles caractérisés par le procédé d’assemblage des boîtiers avec des couvercles par sertissage
H01M 50/586 - Moyens pour empêcher un usage ou une décharge indésirables pour empêcher les contacts incorrects à l’intérieur ou à l’extérieur des batteries à l’intérieur des batteries p.ex. les contacts incorrects des électrodes
H01M 50/593 - Moyens pour empêcher un usage ou une décharge indésirables pour empêcher les contacts incorrects à l’intérieur ou à l’extérieur des batteries caractérisés par les moyens de protection Éléments d’espacement; Plaques d’isolation
A multilayer coil component includes an element body, a plurality of coil conductors, a first resistive layer, and a second resistive layer. The plurality of coil conductors are disposed in the element body and electrically connected to each other. The plurality of coil conductors include a first coil conductor and a second coil conductor adjacent to each other. The first resistive layer and the second resistive layer oppose each other between the first coil conductor and the second coil conductor. The first resistive layer is in contact with the first coil conductor.
Disclosed herein is an antenna device that includes a first coil wound in a plurality of turns, and a second coil disposed outside the first coil as viewed in a coil axis direction of the first coil. The first coil is configured such that a first interval between turns in a first direction is larger than a second interval between turns in a second direction perpendicular to the first direction. An inter-coil distance between an outer edge of the first coil and an inner edge of the second coil is larger than the second interval as viewed in the coil axis direction.
H02J 50/50 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des répéteurs d’énergie supplémentaires entre les dispositifs de transmission et les dispositifs de réception
H01Q 7/00 - Cadres ayant une distribution du courant sensiblement uniforme et un diagramme de rayonnement directif perpendiculaire au plan du cadre
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
[Problem] To reduce the influence of a magnetic field generated from an end portion of a compensation coil on a magneto-sensitive element. [Solution] A magnetic sensor 1 comprises: an external magnetic body 30 that concentrates a magnetic field to be detected on a sensor chip 20; a compensation coil 60 that is wound around the external magnetic body 30 by means of a bobbin part 51 of a molding member 50; and a connection terminal 71 that is secured to a terminal securing part 52 of the molding member 50, and to which one end of the compensation coil 60 is connected. The terminal securing part 52 has a bobbin connection surface S1 and a terminal securing surface S2. Said one end of the compensation coil 60 has a segment 61 extending along the bobbin connection surface S1, and a segment 62 extending along the terminal securing surface S2. Thus, it is possible to reduce the influence of the magnetic field generated from an end portion of the compensation coil on a magneto-sensitive element.
[Problem] To enhance insulation between a conductor post, and a terminal electrode and a magnetic element body in a coil component in which a coil pattern and the conductor post are embedded in the magnetic element body. [Solution] A coil component 1 comprising: a magnetic element body M having a mounting surface 4; a coil pattern 130 embedded in the magnetic element body M; a conductor post P1, which is embedded in the magnetic element body M, and one end of which is connected to the coil pattern 130; a post protection film 15 provided between the conductor post P1 and the magnetic element body M; a cover insulation film 21 that covers the mounting surface 4 of the magnetic element body M; and a terminal electrode E1 provided on the cover insulation film 21 and connected to the other end of the conductor post P1 though an opening 21a in the cover insulation film 21. The post protection film 15 comprises an insulation material that is different from the cover insulation film 21.
[Problem] To mitigate an electric field generated in a drift layer when a reverse voltage is applied to a Schottky barrier diode that uses a gallium oxide. [Solution] A Schottky barrier diode 1 comprises: a drift layer 30 and a semiconductor substrate 20 comprising a gallium oxide; and an anode electrode 40 and a cathode electrode 50. The drift layer 30 has an outer peripheral trench 32 surrounding the anode electrode 40 in a plan view. The outer peripheral trench 32 includes an inner peripheral wall 33, an outer peripheral wall 34, a bottom surface 35, an inner peripheral corner portion 36, and an outer peripheral corner portion 37. The inner peripheral wall 33 and the inner peripheral corner portion 36 are covered by the anode electrode 40 with an insulation film 60 interposed therebetween, and the outer peripheral corner portion 37 is covered by a semiconductor material 70 of a conductivity type which is opposite to that of the drift layer 30. As a result, when a reverse voltage is applied, the electric field generated around the inner peripheral corner portion 36 in the drift layer 30 is mitigated.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
A coil device includes: a bobbin having a winding core portion with a hollow cylindrical shape; a core at least partially disposed inside the winding core portion; a wire having a coil portion wound around the winding core portion and a lead portion having a wire connection portion led out from the coil portion to extend substantially parallel to a winding axis O of the coil portion; and a terminal portion having a connection portion connected to the wire at the wire connection portion. A connection portion inner end, which is a position closest to the winding axis in an X-axis direction perpendicular to the winding axis O, of contact portions of the wire connection portion in the connection portion is disposed closer to the winding axis O in the X-axis direction than a first outer end portion located at a position farthest from the winding axis O in the X-axis direction in the bobbin.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre eux; Fixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
25.
SOFT MAGNETIC POWDER, MAGNETIC CORE, MAGNETIC COMPONENT, AND ELECTRONIC DEVICE
A soft magnetic powder including a first particle group including particles having a particle size of D50 or more and a second particle group including particles having a particle size of less than D50. An average value of circularities of the particles belonging to the first particle group is defined as a first average circularity C1, and an average value of circularities of the particles belonging to the second particle group is defined as a second average circularity C2, and C1
H01F 1/12 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux
This electronic component support structure is a support structure for supporting an electronic component provided on a substrate, and is provided with a cover member that covers the electronic component. The cover member is an integral structure with a cover component that covers an interface portion for external connection to the substrate.
A magnetoresistance effect element includes a laminated body having a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, a first wiring connected to the laminated body, a sidewall insulating layer configured to cover at least a part of a side surface of the laminated body, a first electrode connected to a side of the laminated body opposite to the first wiring, and a second electrode and a third electrode provided on both sides of the laminated body with the sidewall insulating layer sandwiched therebetween, sandwiching the laminated body, and connected to the first wiring.
A power conversion apparatus includes: a first power terminal; a first arm including a first switching device between a first coupling terminal and a first node, a second switching device between the first node and a second node, and a third switching device between the second node and a second coupling terminal; a second arm including a fourth switching device between the first coupling terminal and a third node, a fifth switching device between the third node and a fourth node, and a sixth switching device between the fourth node and the second coupling terminal; a first inductor between the second node and a fifth node; a second inductor between the fourth and fifth nodes: a first capacitor between the fifth node and the second coupling terminal; a first transformer including a first winding and a second winding; a rectifying circuit; a second power terminal; and a control circuit.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
A detection device includes a base plate, a piezoelectric element disposed on the base plate with an insulating member therebetween and generating a pressing force corresponding to an electromotive force, an electrostatic capacitance sensor detecting an electrostatic capacitance of the base plate, a wiring member (first wiring member) electrically connected to the piezoelectric element, and a wiring member (second wiring member) electrically connected to the electrostatic capacitance sensor.
G01L 1/16 - Mesure des forces ou des contraintes, en général en utilisant les propriétés des dispositifs piézo-électriques
G01L 1/14 - Mesure des forces ou des contraintes, en général en mesurant les variations de la capacité ou de l'inductance des éléments électriques, p.ex. en mesurant les variations de fréquence des oscillateurs électriques
A high voltage feed-through capacitor includes an element body, a first electrode, a second electrode and a through-conductor. The element body includes a first main surface and a second main surface facing away from each other. A through-hole is formed in the element body and opens in the first main surface and the second main surface. The first electrode is disposed on the first main surface. The second electrode is disposed on the second main surface. The through-conductor is inserted through the through-hole and electrically connected to the first electrode. An opening area of the through-hole in the second main surface is larger than an opening area of the through-hole in the first main surface.
The metal magnetic powder includes Co as a main component, and an average particle size (D50) of 1 nm to 100 nm. An X-ray diffraction chart of the metal magnetic powder has a first peak that appears in a range of a diffraction angle 2θ of 41.6±0.3°, and a second peak that appears in a range of a diffraction angle 20θ of 47.4±0.3°. When a full width at half maximum of the first peak is set as FW1, and a full width at half maximum of the second peak is set as FW2, a ratio (FW2/FW1) of FW2 to FW1 is 1 to 5.
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p.ex. de poudre
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p.ex. par broyage, meulage ou écrasement à la meule
B22F 9/30 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec décomposition de mélanges métalliques, p.ex. par pyrolyse
C22C 19/00 - Alliages à base de nickel ou de cobalt, seuls ou ensemble
C22C 19/07 - Alliages à base de nickel ou de cobalt, seuls ou ensemble à base de cobalt
32.
SOFT MAGNETIC ALLOY POWDER, MAGNETIC CORE, MAGNETIC COMPONENT, AND ELECTRONIC DEVICE
A soft magnetic alloy powder comprises first particles to fifth particles, each having a particle size within a specific range. Among the first particles to the fifth particles, nth particles have an average particle size xn (μm), an average circularity yn, and a variance zn of circularity, where nth is any ordinal number from first to fifth. Points (xn, yn) (n=1 to 5) plotted in an xy plane define an approximate straight line having a slope “my” of −0.0030 or more. Points (xn, zn) (n=1 to 5) plotted in an xz plane define an approximate straight line having a slope “mz” of 0.00050 or less.
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p.ex. de poudre
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 1/06 - Poudres métalliques caractérisées par la forme des particules
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 3/24 - Traitement ultérieur des pièces ou objets
B22F 5/10 - Fabrication de pièces ou d'objets à partir de poudres métalliques caractérisée par la forme particulière du produit à réaliser d'articles avec des cavités ou des trous, non prévue dans les sous-groupes précédents
B22F 9/00 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet
B22F 9/08 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau liquide par coulée, p.ex. à travers de petits orifices ou dans l'eau, par atomisation ou pulvérisation
C22C 33/04 - Fabrication des alliages ferreux par fusion
A soft magnetic alloy powder comprises a component having a compositional formula ((Fe(1−(α+β))CoαNiβ)(1−γ)X1γ)(1−(a+b+c+d+e))BaPbSicCdCre in atomic ratio. X1 comprises at least one selected from specific elements. Values of a, b, c, d, e, α, β, and γ of the compositional formula satisfy specific ranges. The soft magnetic alloy powder comprises soft magnetic alloy particles including soft magnetic alloy particles having a particle size of (0.95×D90) or more and (1.05×D90) or less. An average Wadell's circularity of the soft magnetic alloy particles having the particle size of (0.95×D90) or more and (1.05×D90) or less is 0.75 or more. A variance of Wadell's circularity of the soft magnetic alloy particles having the particle size of (0.95×D90) or more and (1.05×D90) or less is 0.035 or less.
A sensor chip of a magnetic sensor includes a magnetosensitive element, ferromagnetic films forming a magnetic gap overlapping the magnetosensitive element, and a passivation film provided on the ferromagnetic films so as to be filled in the magnetic gap. The ferromagnetic films each include a lower magnetic film and an upper magnetic film. The magnetic gap is configured such that a width between the upper magnetic films is larger than a width between the lower magnetic films. The material of the lower magnetic film is higher in permeability than the material of the upper magnetic film. With the above configuration, magnetic flux is efficiently applied to the magnetosensitive element, making it possible to achieve high detection sensitivity.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
35.
ENERGY HARVESTING MODULE AND METHOD OF MAKING AN ENERGY HARVESTING MODULE
Energy harvesting module and, more particularly, energy harvesting module configured to be coupled to a rotatable component of a vehicle's wheel, and methods of making an energy harvesting module are disclosed. In some embodiments, an energy harvesting system includes: a piezoelectric component configured to produce energy in response to mechanical strain imparted on the piezoelectric component, wherein the piezoelectric component is configured to deform while experiencing the mechanical strain, and the piezoelectric component comprises a piezoelectric material layer, one or more conductive bonding layers, a load backing layer, and one or more electrode layers, wherein the load backing layer comprises a fiber reinforced composite material.
H02N 2/18 - Machines électriques en général utilisant l'effet piézo-électrique, l'électrostriction ou la magnétostriction fournissant une sortie électrique à partir d'une entrée mécanique, p.ex. générateurs
H01L 41/113 - Eléments piézo-électriques ou électrostrictifs à entrée mécanique et sortie électrique
H01L 41/297 - Formation d’électrodes, de connexions électriques ou de dispositions de bornes Électrodes à couche individuelle de parties piézo-électriques ou électrostrictives multicouches
H02J 7/32 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries pour la charge de batteries par un ensemble comprenant une machine motrice non électrique
H02J 50/00 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique
36.
MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY
A magnetic domain wall moving element includes a first ferromagnetic layer, non-magnetic layer, second ferromagnetic layer, first magnetization fixed part, second magnetization fixed part, first surface layer and second surface layer. The first and second ferromagnetic layer sandwich the non-magnetic layer, the second ferromagnetic layer has a region having a magnetic domain wall formed therein, the first magnetization fixed part contacts second ferromagnetic layer, the second magnetization fixed part contacts second ferromagnetic layer at a position different from that of the first magnetization fixed part, the first is thicker than the second magnetization fixed part, the first surface layer contacts the first magnetization fixed part's first surface, the second surface layer contacts the second magnetization fixed part's first surface, and a constituent atom of a portion of the first surface layer in contact with the first magnetization fixed part are different from a constituent atom of the second surface layer.
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width W1 of an outer peripheral trench formed in the drift layer is larger than a width W2 of a center trench. An outer peripheral wall S1 of the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall S2 thereof is closer to vertical than the outer peripheral wall S1. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
38.
MULTILAYER BODY, NEGATIVE ELECTRODE COLLECTOR FOR LITHIUM ION SECONDARY BATTERIES, AND NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERIES
A laminated body contains a first metal layer containing copper and a second metal layer containing nickel and directly laminated on the first metal layer. A full width at half maximum of an X-ray diffraction peak having the maximum intensity among at least one X-ray diffraction peak derived from a nickel-containing crystal in the second metal layer is 0.3° or more and 1.2° or less.
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
39.
MAGNETIC ARRAY, MAGNETIC ARRAY CONTROL METHOD, AND MAGNETIC ARRAY CONTROL PROGRAM
A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 19/08 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage utilisant des éléments magnétiques utilisant des couches minces dans une structure plane
A high voltage capacitor includes a pair of capacitors; a common conductor, and a pair of individual conductors. Each of the pair of capacitors includes an element body having a columnar shape with a first direction as an axial direction, and including a first side surface and a second side surface facing away each other in a second direction orthogonal to the first direction, a first electrode disposed on the first side surface and electrically connected to a corresponding individual conductor of the pair of individual conductors; and a second electrode disposed on the second side surface and electrically connected to the common conductor. The pair of capacitors is disposed in such a way that the first electrodes face each other in the second direction. The common conductor surrounds the pair of capacitors and the pair of individual conductors when viewed from the first direction.
A transient voltage protection device includes an element body formed with a cavity inside, a pair of external electrodes on the element body, and a pair of internal electrodes in the element body. The pair of internal electrodes oppose each other. Each internal electrode is connected to a corresponding external electrode of the pair of external electrodes. The element body includes a first inner surface and a second inner surface. The first and second inner surfaces define the cavity and oppose each other. The pair of internal electrodes are exposed to the cavity and disposed on the first inner surface. In a cross section along a direction in which the first inner surface and the second inner surface oppose each other, the first inner surface includes a contour different from a contour included in the second inner surface.
A magnetic sensor includes a bridge circuit including a first arm and a second arm, a first substrate, and a second substrate. The first arm is provided on the first substrate. The second arm is provided on the second substrate. The first arm includes a first resistor and a second resistor connected in series. The second arm includes a third resistor and a fourth resistor connected in series. The second substrate is located at a position away from the first substrate so that a phase of a resistance of the second arm when a target magnetic field changes periodically is different from that of a resistance of the first arm when the target magnetic field change periodically.
G01D 5/244 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions
G01D 5/245 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions utilisant un nombre variable d'impulsions dans un train
There is provided a sensor member capable of suitably preventing a problem such as the intrusion of moisture or the like through an interface between an electrode and a protective film. A sensor member includes: a protected portion provided on one surface of a metal base and including a detection portion; a protective film including a first protective film portion having a first thickness and a second protective film portion having a second thickness thicker than the first thickness and formed at an opening peripheral edge of an opening leading to the protected portion, and covering at least a part of the protected portion from above; and an electrode portion including a first electrode portion disposed in the opening and connected to the protected portion, and a second electrode portion connected to the first electrode portion at an outer peripheral edge of the first electrode portion and formed on the second protective film portion.
G01L 19/06 - Moyens pour empêcher la surcharge ou l'influence délétère du milieu à mesurer sur le dispositif de mesure ou vice versa
G01L 9/04 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pression; Transmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent en faisant usage des variations de la résistance ohmique, p.ex. de potentiomètre de jauges de contrainte à résistance
G01L 19/00 - MESURE DES FORCES, DES CONTRAINTES, DES COUPLES, DU TRAVAIL, DE LA PUISSANCE MÉCANIQUE, DU RENDEMENT MÉCANIQUE OU DE LA PRESSION DES FLUIDES - Détails ou accessoires des appareils pour la mesure de la pression permanente ou quasi permanente d'un milieu fluent dans la mesure où ces détails ou accessoires ne sont pas particuliers à des types particuliers de manomètres
There is provided a sensor member with a small risk of damage. A sensor member includes: a membrane; a protective film covering a part of the membrane; and an electrode portion connected to the membrane. The electrode portion 5 covers at least a part of the protective film.
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
A piezoelectric element includes a piezoelectric body and first, second, third, and fourth electrode layers disposed in the piezoelectric body. Each of the first, second, third, and fourth electrode layers includes a pair of first electrodes and a pair of second electrodes. The first and second electrodes included in the first electrode layer oppose the second and first electrodes included in the second electrode layer, respectively, with a part of the piezoelectric body. The first and second electrodes included in the second electrode layer oppose the first and second electrodes included in the third electrode layer, respectively, with a part of the piezoelectric body. The first and second electrodes included in the third electrode layer oppose the second and first electrodes included in the fourth electrode layer, respectively, with a part of the piezoelectric body.
H10N 30/87 - Dispositifs piézo-électriques ou électrostrictifs - Détails de structure Électrodes ou interconnexions, p.ex. connexions électriques ou bornes
46.
METAL MAGNETIC POWDER, COMPOSITE MAGNETIC BODY, AND ELECTRONIC COMPONENT
A metal magnetic powder includes: metal nanoparticles having an average particle size (D50) is 1 nm to 100 nm, and a main phase of hcp-Co; and an additive elements α including at least one of Fe, Ni, and Cu.
A transient voltage protection device includes an element body formed with a cavity inside, a pair of internal electrodes, and a discharge assistance portion. The pair of internal electrodes are disposed in the element body and include edges. The edges include parts opposing each other in a first direction in the cavity. The discharge assistance portion is in contact with the parts of the edges. Each of the edges includes a first end exposed on an outer surface of the element body and a second end located opposite the first end and including a corner. The discharge assistance portion includes a pair of edges opposing each other in a second direction intersecting with the first direction and exposed to the cavity. The part included in each of the edges does not include the corner.
H01C 1/148 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances les bornes enveloppant ou entourant l'élément résistif
H01C 7/12 - Résistances de protection contre les surtensions; Parafoudres
In a multilayer filter, first and second resonant circuits are arranged in a direction crossing a stacking direction of a plurality of dielectric layers. An input/output portion includes an input/output port group including an unbalanced port and a pair of balanced ports or an input/output port group including two pairs of balanced ports. The second resonant circuit includes an inductor conductor, a first capacitor conductor, and a second capacitor conductor. The inductor conductor includes first and second ends. The first capacitor conductor is connected to the first end. The second capacitor conductor is connected to the second end. The second dielectric layer has a dielectric constant lower than that of the first dielectric layer. The first and second capacitor conductors are provided in the first dielectric layer. At least a part of the inductor conductor is provided in the second dielectric layer.
This copolymer has a structural unit that comprises one or more triazole skeletons selected from among formulae (1-1) to (1-3), and a structural unit that is represented by formula (2). (In the formulae, each of R1to R6represents one atom or group that is selected from among a hydrogen atom, a methyl group, a trifluoromethyl group, a nitrile group, a fluorine atom, a methoxy group, an ethyl group, an ethoxy group, a methoxymethyl group, a propyl group, an isopropyl group, a cyclopropyl group, a butyl group, an isobutyl group, a (trimethyl)methyl group, a (trimethyl)silyl group, a pentyl group, an isopentyl group, a t-pentyl group, a neopentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, a phenyl group, a tolyl group, a benzyl group and a phenoxymethyl group; or alternatively, each of R1to R6 forms a benzotriazole skeleton together with a triazole ring.)
C08F 226/06 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocyc par un hétérocycle contenant de l'azote
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ (1)
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ (1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5≤α<1.9).
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
Disclosed herein is a coil component that includes, first and second magnetic element bodies, first and second coil conductors embedded respectively in the first and second magnetic element bodies, first and second terminal electrodes exposed from the first magnetic element body and connected respectively to one end and other end of the first coil conductor, third and fourth terminal electrodes exposed from the second magnetic element body and connected respectively to one end and other end of the second coil conductor, and a low-permeability layer provided between the first and second magnetic element bodies and being lower in permeability than the first and second magnetic element bodies.
This core support structure comprises: a first core; and a bearing member that bears the first core. The bearing member has: a bottom wall section on which the bottom surface of the first core is placed; and side wall sections that face side surfaces of the first core. The bottom wall section and/or the side wall sections have formed thereon contact avoidance sections for avoiding contact with corners of the first core.
Disclosed herein is a coil component that includes a coil conductor embedded in the element body; a first bump conductor exposed to the mounting surface and the first and side surfaces; a second bump conductor exposed to the mounting surface and the second and fourth side surfaces; a first dummy bump conductor exposed to the mounting surface and the first and fourth side surfaces; a second dummy bump conductor exposed to the mounting surface and the second and third side surfaces; a first conductive resin layer connecting the first bump conductor and first dummy bump conductor; and a second conductive resin layer connecting the second bump conductor and the second dummy bump conductor. The first and bump conductors and the first and second dummy bump conductors are not covered at least partly with the first conductive resin layer.
Disclosed herein is a switching power supply circuit that includes a switching circuit having an input node connected to an input power supply terminal and an output node connected to an output power supply terminal through an output switch, a feedback circuit configured to feed back information based on a voltage appearing at the output node to the switching circuit, and an activation circuit configured to turn ON the output switch after an elapse of a predetermined time after a voltage appearing at the output node exceeds a predetermined value. The switching circuit is configured to adjust a level of a voltage appearing at the output node based on the information to a predetermined level. The feedback circuit includes an adjustment mechanism configured to adjust a relation between a voltage appearing at the output node and the information.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 3/157 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation avec commande numérique
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
This power supply device includes a battery unit which includes: a first battery pack; a step-up/down circuit for boosting the voltage of an external power supply up to the charge voltage of the battery pack; a first charge circuit; a first discharge circuit for detecting a voltage drop of the external power supply and performing discharge from the battery pack to a load device; and a control circuit for controlling charging and discharging. The discharge circuit has a first discharge switch and a second discharge switch which are connected in series between the battery pack and a power supply line. The first discharge switch is switched on/off by receiving a switching signal from the control circuit, and the second discharge switch is directly switched on/off not via the control circuit on the basis of the voltage of the external power supply.
This negative electrode for a zinc battery comprises a nonporous current collector and a negative electrode mixture layer which is held by the current collector and contains at least one of zinc, a zinc alloy, and a zinc-containing compound. The negative electrode has a current collector-exposed section in which the negative electrode mixture layer is not disposed, in a portion located at the outermost circumferential surface when wound.
H01M 4/24 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs alcalins
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.
This system (A) for recovering an antigen in a solvent comprises charged particles, a mixing unit (4), and a recovery unit (7), wherein: the charged particles each contain 3-70 mol% of a cationic lipid, 1-20 mol% of a PEG-containing lipid, and 20-50 mol% of cholesterol; the surfaces of the charged particles are modified with antibodies; the average zeta potential of the charged particles is -20 to +15 mV; the mixing unit (4) is configured such that the charged particles are added to a solvent (C) and the charged particles and the solvent (C) are stirred in the mixing unit (4); the recovery unit 7 is configured to recover the charged particles mixed with the solvent (C); and the recovery unit (7) is an anionic adsorber that includes an adsorption carrier having a surface on which a compound having an anionic functional group is immobilized.
[Problem] To reduce the influence of coupling between a plurality of inductors in an electronic component which has a structure in which the inductors are provided on a substrate. [Solution] An electronic component 100 comprises: a circuit pattern P1 that includes an inductor L1; a circuit pattern P2 that includes an inductor L2; and a connection capacitor Ck connected between the circuit patterns P1, P2. The connection capacitor Ck has capacitor electrodes E1, E2. The capacitor E1 is connected to a winding pattern 35 that constitutes the inductor L1.
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
H01F 17/00 - Inductances fixes du type pour signaux
An R-T-B-based permanent magnet including: R (rare earth element); T (Fe and Co); B (boron); and one or more selected from Al, Cu, Ga, and Zr. R includes Ce. The total R content is 31.3-34.0 mass % (inclusive), the Co content is 1.85-3.00 mass % (inclusive), the B content is 0.80-0.90 mass % (inclusive), the Al content is 0.03-0.90 mass % (inclusive), the Cu content is 0-0.25 mass % (inclusive), the Ga content is 0-0.10 mass % (inclusive), the Zr content is 0-0.60 mass % (inclusive), and the Fe content is substantially the remainder. The Ce content relative to R is 15-25 mass % (inclusive).
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p.ex. SmCo5 et des éléments IIIa, p.ex. Nd2Fe14B
H01F 1/053 - Alliages caractérisés par leur composition contenant des métaux des terres rares
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
62.
LAYERED RESIN FILM, COLLECTOR, AND SECONDARY BATTERY
A laminated resin film includes: a resin layer; and a Cu film having on one surface or both surfaces of the resin layer, in which in the Cu film, an orientation index of a plane is 0.15 or more according to a Lotgering method, a half-width of an X-ray diffraction peak obtained by X-ray diffraction measurement of the plane is 0.3° or less, and Expression (1) is satisfied.
A laminated resin film includes: a resin layer; and a Cu film having on one surface or both surfaces of the resin layer, in which in the Cu film, an orientation index of a plane is 0.15 or more according to a Lotgering method, a half-width of an X-ray diffraction peak obtained by X-ray diffraction measurement of the plane is 0.3° or less, and Expression (1) is satisfied.
y>3.75x−0.675 Expression (1)
A laminated resin film includes: a resin layer; and a Cu film having on one surface or both surfaces of the resin layer, in which in the Cu film, an orientation index of a plane is 0.15 or more according to a Lotgering method, a half-width of an X-ray diffraction peak obtained by X-ray diffraction measurement of the plane is 0.3° or less, and Expression (1) is satisfied.
y>3.75x−0.675 Expression (1)
(in Expression (1), Y is the orientation index of the plane in the Cu film according to the Lotgering method, and x is the half-width of the X-ray diffraction peak obtained by the X-ray diffraction measurement of the plane in the Cu film.)
Provided is a magnetic core in which metal magnetic particles occupy an area of 75% to 90% on a cross-section. The metal magnetic particles include first large particles having a crystalline metal material and having a Heywood diameter of 3 μm or more on the cross-section of the magnetic core, and second large particles having a nanocrystal structure or an amorphous structure and having a Heywood diameter of 3 μm or more, and an insulation coating of the first large particles is thicker than an insulation coating of the second large particles.
A magnetic sensor of the present invention has an elongate element portion having a magnetoresistive effect and a pair of elongate soft magnetic bodies that are arranged along the element portion on both sides of the element portion with regard to a short axis thereof. Each soft magnetic body includes a central portion that is adjacent to the element portion from one end to another end of the element portion with regard to a long axis direction thereof and a pair of end portions that protrude from the central portion in the long axis direction. A width of at least one of the end portions gradually decreases in a direction away from the central portion in at least a part of the end portions in the long axis direction thereof.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
65.
LAYERED BODY, NEGATIVE ELECTRODE CURRENT COLLECTOR FOR LITHIUM ION SECONDARY BATTERY, AND NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY
A laminated body contains a first metal layer containing copper and a second metal layer containing nickel and laminated directly on the first metal layer. A first surface of the second metal layer is a surface in contact with the first metal layer. A second surface of the second metal layer is a reverse surface of the first surface. A thickness direction of the second metal layer is a direction approximately perpendicular to the first surface and oriented from the first surface toward the second surface. A unit of a content of nickel in the second metal layer is % by mass. The content of nickel in the second metal layer increases along the thickness direction.
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
66.
LAYERED BODY, NEGATIVE ELECTRODE CURRENT COLLECTOR FOR LITHIUM ION SECONDARY BATTERY, AND NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY
A laminated body contains a first metal layer containing copper; and a second metal layer containing nickel and laminated directly on the first metal layer. A first surface of the second metal layer is a surface in contact with the first metal layer. A second surface of the second metal layer is a reverse face of the first surface. A thickness direction of the second metal layer is a direction approximately perpendicular to the first surface and oriented from the first surface toward the second surface. A unit of a content of nickel in the second metal layer is % by mass. The content of nickel in the second metal layer 2 decreases along the thickness direction D.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
A multilayer electronic device includes an element body and a pair of external electrodes. The element body includes an interior region in which inner dielectric layers and internal electrode layers are alternately laminated and an exterior region located outside the interior region in its lamination direction. The pair of external electrodes exists on surfaces of the element body. Main-phase particles in the inner dielectric layers and outer dielectric layers of the exterior region include a main component having a perovskite crystal structure represented by a general formula of ABO3. r1
In a multilayer filter, first to fourth resonant circuits are connected to an input/output portion. The input/output portion includes an input/output port group including an unbalanced port and a pair of balanced ports or an input/output port group including two pairs of balanced ports. Each of the first to fourth resonant circuits includes an inductor conductor and first and second capacitor conductors. The inductor conductor includes first and second ends. The first capacitor conductor is connected to the first end. The second capacitor conductor is connected to the second end. The second and third resonant circuits are magnetically coupled to each other. The second and third resonant circuits are arranged between the first resonant circuit and the fourth resonant circuit in a first direction. Each of first and second electrodes of a jump capacitor conductor is connected to the inductor conductors of the first and fourth resonant circuits.
To reduce the chip size of a chip-type electronic component including a capacitor and an inductor. A chip-type electronic component includes a capacitor constituted by a lower electrode pattern, an upper electrode pattern, and an insulating layer, an insulating layer covering the capacitor, and an inductor pattern disposed on the insulating layer. The inductor pattern has a section overlapping the capacitor, whereby an auxiliary capacitor is added. The inductor pattern is thus made to partly overlap the capacitor, so that a larger inductance can be obtained with a small chip size. In addition, characteristics can also be improved by auxiliary capacitance.
H01L 27/01 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant uniquement des éléments à film mince ou à film épais formés sur un substrat isolant commun
An R-T-B permanent magnet that contains: main-phase grains composed of an R2T14B compound (where R is a rare earth element, T is a transition metal element, and B is boron); and grain boundaries. R includes Ce. The R-T-B permanent magnet has a Ce content of 15-35 mass % with respect to the total R content. The grain boundaries include an R-rich phase and an R-T phase. In a cross section of the R-T-B permanent magnet, the surface area ratio S(R-T) of the R-T phases with respect to the grain boundaries is 0.60-0.85.
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p.ex. SmCo5 et des éléments IIIa, p.ex. Nd2Fe14B
B22F 9/02 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p.ex. par broyage, meulage ou écrasement à la meule
B22F 3/24 - Traitement ultérieur des pièces ou objets
B22F 3/16 - Compactage et frittage par des opérations successives ou répétées
A multilayer coil component includes an element body, a coil disposed in the element body, and an external electrode disposed in the element body and electrically connected to the coil. The element body includes a principal surface that is a mounting surface, and an end surface positioned adjacent to the principal surface and extending in a direction crossing to the principal surface. The external electrode includes an underlying metal layer and a conductive resin layer. The underlying metal layer is formed on the principal surface and the end surface. The conductive resin layer is formed to cover the underlying metal layer. A thickness of the conductive resin layer at an end positioned above the principal surface of the underlying metal layer is equal to or greater than 50% of a maximum thickness of a portion positioned above the principal surface of the conductive resin layer.
Disclosed herein is a common mode filter that includes a winding core part and first and second wires wound in a same direction around the winding core part. The first and second wires constitute a first winding block on one endmost side in an axial direction of the winding core part, a second winding block on other endmost side in the axial direction of the winding core part, and a third winding block positioned between the first and second winding blocks. The second winding block is a winding block at an odd-numbered position counted from the first winding block. The first and second wires cross each other in an area between the first and third winding blocks and in an area between the second and third winding blocks.
H03H 7/09 - Filtres comportant une inductance mutuelle
H03H 1/00 - RÉSEAUX D'IMPÉDANCES, p.ex. CIRCUITS RÉSONNANTS; RÉSONATEURS - Détails de réalisation des réseaux d'impédances dont le mode de fonctionnement électrique n'est pas spécifié ou est applicable à plus d'un type de réseau
H01F 27/06 - Montages, supports ou suspensions de transformateurs, réactances ou bobines d'arrêt
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
73.
ELEMENT ARRAY CIRCUIT, ELECTROMAGNETIC WAVE SENSOR, TEMPERATURE SENSOR, AND STRAIN SENSOR
An element array circuit includes one or more first wiring lines, second wiring lines, impedance elements, one or more operational amplifiers, one or more conversion elements, and one or more switchers. The second wiring lines each extend in a direction different from a direction of extension of the first wiring lines. The impedance elements are each coupled to one each of the first and second wiring lines. The operational amplifiers each include a positive input terminal, a negative input terminal couplable to one of the second wiring lines, and an output terminal. The conversion elements are each coupled to the negative input terminal and the output terminal, and each convert a current flowing through the second wiring line coupled to the negative input terminal into a voltage. The switchers are each coupled to one of the conversion elements and come into a conducting state or a nonconducting state.
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01N 22/00 - Recherche ou analyse des matériaux par l'utilisation de micro-ondes ou d'ondes radio, c. à d. d'ondes électromagnétiques d'une longueur d'onde d'un millimètre ou plus
Provided is a magnetic core in which metal magnetic particles occupy an area of 75% to 90% on a cross-section. The metal magnetic particles include first large particles having a nanocrystal structure and having a Heywood diameter of 3 μm or more on the cross-section of the magnetic core, and second large particles having an amorphous structure and having a Heywood diameter of 3 μm or more, and an insulation coating of the first large particles is thicker than an insulation coating of the second large particles.
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
H01F 1/24 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p.ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées
[Problem] To enhance freedom of design and prevent the joining of two coil patterns, in a composite electronic component having a structure in which an electronic component is embedded. [Solution] A composite electronic component 1 comprises: coil patterns 41, 42 that are provided to a conductor layer C3 and are arranged with a gap G1 therebetween, without having a ground pattern interposed therebetween; a ground pattern GP that is provided to a conductor layer C4 and overlaps with the gap G1 in plan view; an electronic component 2 that is embedded in an insulation layer 12; and a plurality of external terminals.
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
H01F 17/00 - Inductances fixes du type pour signaux
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
This toilet seat device comprises: a toilet seat part; and a body part to which the toilet seat part is detachably attached. The body part transmits power to the toilet seat part through wireless power transmission. The toilet seat part receives the power from the body part through the wireless power transmission, and is provided with a load to which the power received from the body part is supplied. At least one of the toilet seat part and the body part is provided with an output adjustment unit that adjusts a power value of the power outputted from the toilet seat part to the load without wireless communication between the toilet seat part and the body part.
This polymer includes at least one structural unit selected from structural units represented by formula (1) and formula (2) (in the formulae, X is a divalent linking group; A is a halogen atom or an alkyl group which has 1-5 carbon atoms and may have a substituent; and M is a cation).
Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.
This electronic component comprises: a first resonance circuit that is configured to include a first inductor and a first capacitor; and a second resonance circuit that is configured to include a second inductor, which is magnetically coupled to the first inductor, and a second capacitor. The first resonance circuit includes a third inductor that is electrically series-connected to the first inductor. The third inductor is arranged to be magnetically coupled to the second inductor.
H03H 7/09 - Filtres comportant une inductance mutuelle
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
80.
MAGNETIC SENSOR, ROTATION ANGLE DETECTION APPARATUS, AND BRAKE SYSTEM USING ROTATION ANGLE DETECTION APPARATUS
Magnetic sensor 1 has magnetic field detection element 7 that detects a magnetic field that is generated by magnet 2 that rotates about central axis C; and substrate 10 that has first side P1 and second side P2 that is a reverse side of the first side P1, wherein second side P2 includes first slope PK1 that is inclined with respect to first side P1. Magnetic field detection element 7 is provided along first slope PK1. Magnet 2 is separated from central axis C and polarities of magnet 2 alternate in a circumferential direction about central axis C. First side P1 is substantially parallel to central axis C. First slope PK1 is inclined with respect to first side P1 by an average angle of 0. In a plane perpendicular to central axis C, intensity of the magnetic field where magnetic field detection element 7 is positioned changes as magnet 2 rotates, and the relation
Magnetic sensor 1 has magnetic field detection element 7 that detects a magnetic field that is generated by magnet 2 that rotates about central axis C; and substrate 10 that has first side P1 and second side P2 that is a reverse side of the first side P1, wherein second side P2 includes first slope PK1 that is inclined with respect to first side P1. Magnetic field detection element 7 is provided along first slope PK1. Magnet 2 is separated from central axis C and polarities of magnet 2 alternate in a circumferential direction about central axis C. First side P1 is substantially parallel to central axis C. First slope PK1 is inclined with respect to first side P1 by an average angle of 0. In a plane perpendicular to central axis C, intensity of the magnetic field where magnetic field detection element 7 is positioned changes as magnet 2 rotates, and the relation
(1/Ks)×0.8≤MFR≤(1/Ks)×1.2(Ks=sin θ)
is satisfied, where MFR is a ratio of a maximum value to a minimum value of the intensity of the magnetic field in the plane.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
B60T 17/22 - Dispositifs pour surveiller ou vérifier les systèmes de freins; Dispositifs de signalisation
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
Systems, methods, and devices for haptic feedback are provided. A microfluidic device includes an inlet port for supplying a fluid into the microfluidic device. A tube receives the fluid from the inlet port. The microfluidic device includes a piezoelectric actuator for realizing a displacement of a substrate to which the microfluidic device is attached, the displacement based on an electrical actuation applied to the piezoelectric actuator, and an amount of the fluid or a pressure in the tube. In some embodiments, the tube includes a carbon nanotube. In some embodiments, an amount of the fluid in the tube is controlled by an actuator (e.g., the piezoelectric actuator).
This copolymer includes: a structural unit represented by a formula (1) (R1is any one selected from among a hydrogen atom, a methyl group, a dimethyl group, an ethyl group, an isopropyl group, an isobutyl group, a phenyl group, and a benzyl group, R2is a hydrogen atom or a methyl group, or R1and R2 form a benzooxazolidinone skeleton together with an oxazolidinone ring); and a structural unit represented by formula (2).
C08F 226/06 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocyc par un hétérocycle contenant de l'azote
An electronic component includes: a first conductor extending in one direction; a second conductor extending in the one direction; a first inductor conductor bridged so as to linearly extend between an end portion of the first conductor in its extending direction and an end portion of the second conductor in its extending direction; a connecting conductor that extends in the one direction and has a first end portion and a second end portion in its extending direction, the first end portion being connected to the first inductor conductor and being located between the first conductor and the second conductor; and a capacitor pad electrically connected to the second end portion of the connecting conductor.
A magnetic field detection device includes a magnetic field generation unit that generates a magnetic field, a magnetic field detection unit that detects the magnetic field, a first housing that has an accommodation unit that accommodates the magnetic field detection unit so that the magnetic field detection unit is exposed, and a second housing that movably accommodates a moving body. The strength or angle of the magnetic field generated from the magnetic field generation unit and applied to the magnetic field detection unit changes in accordance with movement of the moving body. The second housing has a mounting unit on which the first housing is mounted. The first housing is mounted on the mounting unit via a seal member that surrounds the magnetic field detection unit, so that the mounting unit is between the magnetic field detection unit and the moving body, and the inside of the accommodation unit is sealed by the seal member and the mounting unit.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
A bridge circuit (30) alternately applies a first voltage and a second voltage having mutually different polarities to a capacitor (200). A diode (41) is connected to one end of the capacitor (200). A diode (42) is connected to another end of the capacitor (200). A capacitor (50) is connected to the diode (41) and the diode (42). A control circuit (60) controls a plurality of switch elements included in the bridge circuit (30) in such a way that electric charge stored in the capacitor (200) moves to the capacitor (50) via the diode (41) when a voltage applied to the capacitor (200) transitions from the first voltage to the second voltage and electric charge stored in the capacitor (200) moves to the capacitor (50) via the diode (42) when a voltage applied to the capacitor (200)transitions from the second voltage to the first voltage.
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/60 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors bipolaires
B41J 2/045 - Machines à écrire ou mécanismes d'impression sélective caractérisés par le procédé d'impression ou de marquage pour lequel ils sont conçus caractérisés par la mise en contact sélective d'un liquide ou de particules avec un matériau d'impression à jet d'encre caractérisés par le procédé de formation du jet en produisant à la demande des gouttelettes ou des particules séparées les unes des autres par pression, p.ex. à l'aide de transducteurs électromécaniques
A memristor includes a first variable conductance element and a second variable conductance element. A minimum value of conductance of the second variable conductance element during reading is larger than a maximum value of conductance of the first variable conductance element during reading. In the memristor, a first read path when the conductance of the first variable conductance element is read merges with a second read path when the conductance of the second variable conductance element is read.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
H01L 43/08 - Résistances commandées par un champ magnétique
88.
POWER CONVERSION DEVICE AND POWER CONVERSION SYSTEM
This power conversion device according to an aspect of the present invention comprises: a first power terminal that has two connecting terminals; a voltage sensor that is able to detect the voltage between the two connecting terminals; a switching circuit that is connected to the first power terminal; a transformer that has a first winding that is connected to the switching circuit, and a second winding; a rectifying circuit that is connected to the second winding; a smoothing circuit that is connected to the rectifying circuit; a second power terminal that is connected to the smoothing circuit; and a control circuit that is able to control the operations of the switching circuit and the rectifying circuit. The control circuit is able to cause the rectifying circuit to operate so as to supply power from the second power terminal toward the first power terminal in a second period before a first period for supplying power from the first power terminal toward the second power terminal, and is able to detect a short circuit between the two connecting terminals by performing a comparison operation for comparing the voltage detected by the voltage sensor and a predetermined threshold voltage within the period of the second period.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
A magnetic sensor device includes a sensor substrate and a sensor element circuitry. The sensor substrate has a surface. The sensor element circuitry is provided on the surface of the sensor substrate and includes one or more magnetic sensor elements. As viewed in a plane parallel to the surface, the sensor substrate has a perimeter that is substantially octagonal. The perimeter includes two short sides opposed to each other, two long sides opposed to each other, and four corners. The four corners are each chamfered entirely or partially in a thickness direction that is substantially orthogonal to the surface. A ratio of a length of each of the four corners along each of the two long sides of the sensor substrate to a length of each of the two long sides of the sensor substrate is less than or equal to 0.39.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A magnetic sensor device includes a magnetic sensor, a die pad, and four leads. The magnetic sensor includes a bridge circuit including a plurality of arms and a plurality of pads electrically connected to the bridge circuit. One of the plurality of arms is provided between one of the plurality of pads and a different one of the plurality of pads in circuit configuration. The magnetic sensor further includes a sub-pad electrically connected between one end and another end of the one arm and also electrically connected to the die pad.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
91.
MAGNETIZED ROTATING ELEMENT, MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND METHOD FOR MANUFACTURING MAGNETIZED ROTATING ELEMENT
The magnetized rotating element according to the present invention is provided with spin-orbit torque wiring, a first ferromagnetic layer, first via wiring, and second via wiring. The first ferromagnetic layer opposes at least a portion of the spin-orbit torque wiring and is between the first via wiring and the second via wiring when viewed from the stacking direction. The spin-orbit torque wiring has a first region and a second region that do not overlap the first ferromagnetic layer and a third region that overlaps the first ferromagnetic layer when viewed from the stacking direction. The first region is more crystalline than the third region.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
An electronic component embedded substrate includes conductor layers L1 to L3, insulating layers 112 and 113 provided between the conductor layers L2 and L3, an insulating layer 114 provided between the conductor layers L1 and L2, a semiconductor embedded in the insulating layers 112 and 113, a via conductor 142 filling a via V, and a via conductor 143 filling a via 143a. The via 143a is provided at such a position that overlaps the via V and is shallower than the via V. The inner wall of the via 143a is larger in surface roughness than the inner wall of the via V. This makes voids less likely to occur in the via conductor 142 filling the deep via V and enhances adhesion between the via conductor 143 and the shallow via 143a that the via conductor 143 fills.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/14 - Supports, p.ex. substrats isolants non amovibles caractérisés par le matériau ou par ses propriétés électriques
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
93.
DIELECTRIC COMPOSITION, CAPACITIVE ELEMENT, VISIBLE-LIGHT PHOTOCATALYTIC MATERIAL, AND VISIBLE-LIGHT PHOTOELECTRIC CONVERSION ELEMENT
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japon)
Inventeur(s)
Yamazaki, Kumiko
Kano, Shuto
Masubuchi, Yuji
Kikkawa, Shinichi
Abrégé
A dielectric composition comprises a crystal of an oxynitride. A peak attributed to absence of a center of symmetry of the crystal of the oxynitride is detected by Raman spectroscopy of the dielectric composition within a Raman shift range of 500 cm−1 or less.
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
B01J 35/00 - Catalyseurs caractérisés par leur forme ou leurs propriétés physiques, en général
C23C 16/515 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges pulsées
A coil device includes a coil, a terminal, a bobbin, and a core. The coil includes a winding portion and a lead portion drawn out from the winding portion. The terminal is connected with the lead portion. The bobbin includes a cylinder portion for the winding portion and a terminal installation portion formed at an end in a first direction parallel to an axial direction of the cylinder portion and provided with the terminal. The core is attachable to the bobbin. The terminal installation portion includes a convex portion separating the core and the terminal.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre eux; Fixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
H01F 5/04 - Dispositions des connexions électriques aux bobines, p.ex. fils de connexion
A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
G11C 11/18 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des dispositifs à effet Hall
H10N 52/80 - Dispositifs à effet Hall - Détails de structure
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
96.
MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY
The present invention provides a magnetization rotation element comprising a spin-orbit torque wire, a first ferromagnetic layer, a first columnar body, a second columnar body, and a first conductive layer. The first ferromagnetic layer faces at least a portion of the spin-orbit torque wire. The first conductive layer is in contact with the spin-orbit torque wire at a position that does not overlap the first ferromagnetic layer as viewed from a laminating direction. The first columnar body penetrates the spin-orbit torque wire and is in contact with the spin-orbit torque wire and the first conductive layer. The second columnar body is in contact with the spin-orbit torque wire at such a position that the second columnar body and the first columnar body sandwich the first ferromagnetic layer as viewed from the laminating direction.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
This domain wall displacement element comprises a first magnetoresistance effect element and a first transistor. A first domain displacement layer of the first domain displacement layer is electrically connected to the first active region of the first transistor. The length in a first direction of the first magnetoresistance effect element is greater than the length in a second direction. The length in the first direction of the first gate is greater than the length in the second direction. The length in the first direction of the first magnetoresistance effect element is greater than the length in the first direction of the first gate. A first gate length direction that joins the first active region and the second active region crosses the first direction.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
H01L 43/08 - Résistances commandées par un champ magnétique
The present invention provides an all-solid-state secondary battery which is provided with: a multilayer body that is obtained by stacking a positive electrode layer that contains a positive electrode active material and a negative electrode layer that contains a negative electrode active material, with a solid electrolyte layer being interposed therebetween; a positive electrode external terminal which is bonded to the positive electrode layer at a first surface among the lateral surfaces of the multilayer body; and a negative electrode external terminal which is bonded to the negative electrode layer at a second surface that is different from the first surface. With respect to this all-solid-state secondary battery, the positive electrode layer expands in a direction from the first surface toward the second surface; the negative electrode layer expands in a direction from the second surface toward the first surface; and the multilayer body is provided with a void in at least one region that is selected from among a region that is surrounded by the positive electrode layer and the first surface, a region that is surrounded by the positive electrode layer, the solid electrolyte layer and the first surface, a region that is surrounded by the negative electrode layer and the second surface, and a region that is surrounded by the negative electrode layer, the solid electrolyte layer and the second surface.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
A mounting board includes: an electronic component including at least a pair of first terminals; and a circuit board including at least a pair of second terminals. The first terminals and the second terminals are electrically joined by a joining material containing a metal element, the electronic component and the joining material are disposed within a wall made of an insulator, a lower surface of the electronic component is lower than an upper surface of the wall, and when long sides of a region surrounded by the wall have a dimension d1 and long sides of the electronic component have a dimension d2, a value of (dimension d1−dimension d2) is 10 μm or less.
[Problem] To provide a thin-film capacitor having excellent heat radiation characteristics. [Solution] A thin-film capacitor 10 comprises: a lower electrode layer 11 made of a metal foil; an upper electrode layer 13 that covers one surface 11A of the lower electrode layer 11 with a dielectric layer 12 therebetween; a passivation layer 14 that covers the one surface 11A of the lower electrode layer 11 so as to have the dielectric layer 12 and the upper electrode layer 13 embedded therein; terminal electrodes 21, 22 provided on the passivation layer 14; a via conductor 31 that is provided so as to penetrate the passivation layer 14 and that connects the terminal electrode 21 and the lower electrode layer 11; and a via conductor 32 that is provided so as to penetrate the passivation layer 14 and that connects the terminal electrode 22 and the upper electrode layer 13. The terminal electrode 21 has a larger plane size than the terminal electrode 22, and the via conductor 31 has a larger cross-sectional area than the via conductor 32.
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur