Provided are: a negative electrode for which it is possible to reduce irreversible capacity in a charge-discharge cycle and to improve charging and discharging efficiency; and an all-solid-state battery provided with the negative electrode. The negative electrode is for a battery comprising a negative electrode current collector and a negative electrode composite material layer formed on one surface of the negative electrode current collector. The negative electrode composite material layer has a negative electrode active material and a solid electrolyte material. The solid electrolyte material is a compound represented by formula (1). The amount of conductive carbon material in the constitution of the negative electrode composite material layer is 3 mass% or less. Drawing_references_to_be_translated:
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
This cured product for lithium ion secondary batteries comprises water-soluble polymers, a crosslinking agent and cellulose nanofibers. The crosslinking agent crosslinks the water-soluble polymers different from each other, or the water-soluble polymers and the cellulose nanofibers. If measured by means of wide-angle X-ray scattering (WAXS) using a CuKα ray, the diffraction angle 2θ has a peak within the range of 16° to 21°. The half-value width of the peak is 5.5° or less.
C08L 29/04 - Alcool polyvinylique; Homopolymères ou copolymères d'esters partiellement hydrolysés d'alcools non saturés avec des acides carboxyliques saturés
C08L 33/02 - Homopolymères ou copolymères des acides; Leurs sels métalliques ou d'ammonium
C08L 101/14 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par des propriétés physiques, p.ex. anisotropie, viscosité ou conductivité électrique les composés macromoléculaires étant solubles dans l'eau ou gonflables dans l'eau, p.ex. gels aqueux
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
3.
DEVICES AND METHODS FOR FLOW CONTROL IN A MICROFLUIDIC SYSTEM
A microfluidic device and a method for flow control of cells or particles in a microfluidic channel are disclosed. The microfluidic device may include a substrate having an outlet channel. The microfluidic device may also include a microfluidic channel arranged on the substrate such that an outlet of the microfluidic channel is positioned above the outlet channel. The microfluidic device may further include a set of piezoelectric actuators arranged above the outlet channel and adjacent to the outlet, the set of piezoelectric actuators configured to eject a portion of a fluid out of the microfluidic channel via the outlet.
B01L 3/00 - Récipients ou ustensiles pour laboratoires, p.ex. verrerie de laboratoire; Compte-gouttes
H10N 30/03 - Assemblage de dispositifs incluant des parties piézo-électriques ou électrostrictives
H10N 30/04 - Traitements afin de modifier une propriété piézo-électrique ou électrostrictive, p.ex. les caractéristiques de polarisation, de vibration ou par réglage du mode
This all-solid-state battery comprises an outer case body, and, inside the outer case body: a laminate in which a positive electrode active material layer, a solid-state electrolyte layer, and a negative electrode active material layer are laminated in the stated order; a positive electrode current collector and a negative electrode current collector that sandwich the laminate in the lamination direction; an insulating sheet that is positioned between the positive electrode current collector and the negative electrode current collector, and is positioned in an in-plane direction relative to the laminate; a first adhesive sheet that is positioned between the insulating sheet and the positive electrode current collector, the first adhesive sheet bonding the insulating sheet and the positive electrode current collector in at least a portion thereof; and a second adhesive sheet that is positioned between the insulating sheet and the negative electrode current collector, the second adhesive sheet bonding the insulating sheet and the negative electrode current collector in at least a portion thereof. The laminate and the outer case body are in communication with each other.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
A cylindrical battery gasket (32) has insulation properties and is to be fitted with a sealing body (24) for sealing an opening of a bottomed exterior can (10) for a cylindrical battery. The gasket has a bottom part, and a cylindrical circumferential wall rising upwardly from a peripheral portion of the bottom part. An inclined surface (32A) is provided to the entire circumference of the outer circumference portion of the gasket in a manner such that the outer diameter of the circumferential wall increases upward and becomes larger than the inner diameter of an opening end part (10A) of the exterior can. The circumferential wall has a shape in which the thickness of the wall gradually increases toward the upper portion of the wall.
H01M 50/184 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie Éléments de scellement caractérisés par leur forme ou leur structure
H01M 50/107 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p.ex. ronde ou elliptique
H01M 50/152 - Couvercles caractérisés par leur forme pour des cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/167 - Couvercles caractérisés par le procédé d’assemblage des boîtiers avec des couvercles par sertissage
H01M 50/586 - Moyens pour empêcher un usage ou une décharge indésirables pour empêcher les contacts incorrects à l’intérieur ou à l’extérieur des batteries à l’intérieur des batteries p.ex. les contacts incorrects des électrodes
H01M 50/593 - Moyens pour empêcher un usage ou une décharge indésirables pour empêcher les contacts incorrects à l’intérieur ou à l’extérieur des batteries caractérisés par les moyens de protection Éléments d’espacement; Plaques d’isolation
[Problem] To reduce the influence of a magnetic field generated from an end portion of a compensation coil on a magneto-sensitive element. [Solution] A magnetic sensor 1 comprises: an external magnetic body 30 that concentrates a magnetic field to be detected on a sensor chip 20; a compensation coil 60 that is wound around the external magnetic body 30 by means of a bobbin part 51 of a molding member 50; and a connection terminal 71 that is secured to a terminal securing part 52 of the molding member 50, and to which one end of the compensation coil 60 is connected. The terminal securing part 52 has a bobbin connection surface S1 and a terminal securing surface S2. Said one end of the compensation coil 60 has a segment 61 extending along the bobbin connection surface S1, and a segment 62 extending along the terminal securing surface S2. Thus, it is possible to reduce the influence of the magnetic field generated from an end portion of the compensation coil on a magneto-sensitive element.
[Problem] To enhance insulation between a conductor post, and a terminal electrode and a magnetic element body in a coil component in which a coil pattern and the conductor post are embedded in the magnetic element body. [Solution] A coil component 1 comprising: a magnetic element body M having a mounting surface 4; a coil pattern 130 embedded in the magnetic element body M; a conductor post P1, which is embedded in the magnetic element body M, and one end of which is connected to the coil pattern 130; a post protection film 15 provided between the conductor post P1 and the magnetic element body M; a cover insulation film 21 that covers the mounting surface 4 of the magnetic element body M; and a terminal electrode E1 provided on the cover insulation film 21 and connected to the other end of the conductor post P1 though an opening 21a in the cover insulation film 21. The post protection film 15 comprises an insulation material that is different from the cover insulation film 21.
[Problem] To mitigate an electric field generated in a drift layer when a reverse voltage is applied to a Schottky barrier diode that uses a gallium oxide. [Solution] A Schottky barrier diode 1 comprises: a drift layer 30 and a semiconductor substrate 20 comprising a gallium oxide; and an anode electrode 40 and a cathode electrode 50. The drift layer 30 has an outer peripheral trench 32 surrounding the anode electrode 40 in a plan view. The outer peripheral trench 32 includes an inner peripheral wall 33, an outer peripheral wall 34, a bottom surface 35, an inner peripheral corner portion 36, and an outer peripheral corner portion 37. The inner peripheral wall 33 and the inner peripheral corner portion 36 are covered by the anode electrode 40 with an insulation film 60 interposed therebetween, and the outer peripheral corner portion 37 is covered by a semiconductor material 70 of a conductivity type which is opposite to that of the drift layer 30. As a result, when a reverse voltage is applied, the electric field generated around the inner peripheral corner portion 36 in the drift layer 30 is mitigated.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
This electronic component support structure is a support structure for supporting an electronic component provided on a substrate, and is provided with a cover member that covers the electronic component. The cover member is an integral structure with a cover component that covers an interface portion for external connection to the substrate.
This copolymer has a structural unit that comprises one or more triazole skeletons selected from among formulae (1-1) to (1-3), and a structural unit that is represented by formula (2). (In the formulae, each of R1to R6represents one atom or group that is selected from among a hydrogen atom, a methyl group, a trifluoromethyl group, a nitrile group, a fluorine atom, a methoxy group, an ethyl group, an ethoxy group, a methoxymethyl group, a propyl group, an isopropyl group, a cyclopropyl group, a butyl group, an isobutyl group, a (trimethyl)methyl group, a (trimethyl)silyl group, a pentyl group, an isopentyl group, a t-pentyl group, a neopentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, a phenyl group, a tolyl group, a benzyl group and a phenoxymethyl group; or alternatively, each of R1to R6 forms a benzotriazole skeleton together with a triazole ring.)
C08F 226/06 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocyc par un hétérocycle contenant de l'azote
This core support structure comprises: a first core; and a bearing member that bears the first core. The bearing member has: a bottom wall section on which the bottom surface of the first core is placed; and side wall sections that face side surfaces of the first core. The bottom wall section and/or the side wall sections have formed thereon contact avoidance sections for avoiding contact with corners of the first core.
This negative electrode for a zinc battery comprises a nonporous current collector and a negative electrode mixture layer which is held by the current collector and contains at least one of zinc, a zinc alloy, and a zinc-containing compound. The negative electrode has a current collector-exposed section in which the negative electrode mixture layer is not disposed, in a portion located at the outermost circumferential surface when wound.
H01M 4/24 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs alcalins
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
This system (A) for recovering an antigen in a solvent comprises charged particles, a mixing unit (4), and a recovery unit (7), wherein: the charged particles each contain 3-70 mol% of a cationic lipid, 1-20 mol% of a PEG-containing lipid, and 20-50 mol% of cholesterol; the surfaces of the charged particles are modified with antibodies; the average zeta potential of the charged particles is -20 to +15 mV; the mixing unit (4) is configured such that the charged particles are added to a solvent (C) and the charged particles and the solvent (C) are stirred in the mixing unit (4); the recovery unit 7 is configured to recover the charged particles mixed with the solvent (C); and the recovery unit (7) is an anionic adsorber that includes an adsorption carrier having a surface on which a compound having an anionic functional group is immobilized.
[Problem] To reduce the influence of coupling between a plurality of inductors in an electronic component which has a structure in which the inductors are provided on a substrate. [Solution] An electronic component 100 comprises: a circuit pattern P1 that includes an inductor L1; a circuit pattern P2 that includes an inductor L2; and a connection capacitor Ck connected between the circuit patterns P1, P2. The connection capacitor Ck has capacitor electrodes E1, E2. The capacitor E1 is connected to a winding pattern 35 that constitutes the inductor L1.
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
H01F 17/00 - Inductances fixes du type pour signaux
[Problem] To enhance freedom of design and prevent the joining of two coil patterns, in a composite electronic component having a structure in which an electronic component is embedded. [Solution] A composite electronic component 1 comprises: coil patterns 41, 42 that are provided to a conductor layer C3 and are arranged with a gap G1 therebetween, without having a ground pattern interposed therebetween; a ground pattern GP that is provided to a conductor layer C4 and overlaps with the gap G1 in plan view; an electronic component 2 that is embedded in an insulation layer 12; and a plurality of external terminals.
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
H01F 17/00 - Inductances fixes du type pour signaux
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
This toilet seat device comprises: a toilet seat part; and a body part to which the toilet seat part is detachably attached. The body part transmits power to the toilet seat part through wireless power transmission. The toilet seat part receives the power from the body part through the wireless power transmission, and is provided with a load to which the power received from the body part is supplied. At least one of the toilet seat part and the body part is provided with an output adjustment unit that adjusts a power value of the power outputted from the toilet seat part to the load without wireless communication between the toilet seat part and the body part.
This polymer includes at least one structural unit selected from structural units represented by formula (1) and formula (2) (in the formulae, X is a divalent linking group; A is a halogen atom or an alkyl group which has 1-5 carbon atoms and may have a substituent; and M is a cation).
This electronic component comprises: a first resonance circuit that is configured to include a first inductor and a first capacitor; and a second resonance circuit that is configured to include a second inductor, which is magnetically coupled to the first inductor, and a second capacitor. The first resonance circuit includes a third inductor that is electrically series-connected to the first inductor. The third inductor is arranged to be magnetically coupled to the second inductor.
H03H 7/09 - Filtres comportant une inductance mutuelle
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
19.
COPOLYMER, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC FILM, AND PIEZOELECTRIC ELEMENT
This copolymer includes: a structural unit represented by a formula (1) (R1is any one selected from among a hydrogen atom, a methyl group, a dimethyl group, an ethyl group, an isopropyl group, an isobutyl group, a phenyl group, and a benzyl group, R2is a hydrogen atom or a methyl group, or R1and R2 form a benzooxazolidinone skeleton together with an oxazolidinone ring); and a structural unit represented by formula (2).
C08F 226/06 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocyc par un hétérocycle contenant de l'azote
This power conversion device according to an aspect of the present invention comprises: a first power terminal that has two connecting terminals; a voltage sensor that is able to detect the voltage between the two connecting terminals; a switching circuit that is connected to the first power terminal; a transformer that has a first winding that is connected to the switching circuit, and a second winding; a rectifying circuit that is connected to the second winding; a smoothing circuit that is connected to the rectifying circuit; a second power terminal that is connected to the smoothing circuit; and a control circuit that is able to control the operations of the switching circuit and the rectifying circuit. The control circuit is able to cause the rectifying circuit to operate so as to supply power from the second power terminal toward the first power terminal in a second period before a first period for supplying power from the first power terminal toward the second power terminal, and is able to detect a short circuit between the two connecting terminals by performing a comparison operation for comparing the voltage detected by the voltage sensor and a predetermined threshold voltage within the period of the second period.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
21.
MAGNETIZED ROTATING ELEMENT, MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND METHOD FOR MANUFACTURING MAGNETIZED ROTATING ELEMENT
The magnetized rotating element according to the present invention is provided with spin-orbit torque wiring, a first ferromagnetic layer, first via wiring, and second via wiring. The first ferromagnetic layer opposes at least a portion of the spin-orbit torque wiring and is between the first via wiring and the second via wiring when viewed from the stacking direction. The spin-orbit torque wiring has a first region and a second region that do not overlap the first ferromagnetic layer and a third region that overlaps the first ferromagnetic layer when viewed from the stacking direction. The first region is more crystalline than the third region.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
The present invention provides a magnetization rotation element comprising a spin-orbit torque wire, a first ferromagnetic layer, a first columnar body, a second columnar body, and a first conductive layer. The first ferromagnetic layer faces at least a portion of the spin-orbit torque wire. The first conductive layer is in contact with the spin-orbit torque wire at a position that does not overlap the first ferromagnetic layer as viewed from a laminating direction. The first columnar body penetrates the spin-orbit torque wire and is in contact with the spin-orbit torque wire and the first conductive layer. The second columnar body is in contact with the spin-orbit torque wire at such a position that the second columnar body and the first columnar body sandwich the first ferromagnetic layer as viewed from the laminating direction.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
This domain wall displacement element comprises a first magnetoresistance effect element and a first transistor. A first domain displacement layer of the first domain displacement layer is electrically connected to the first active region of the first transistor. The length in a first direction of the first magnetoresistance effect element is greater than the length in a second direction. The length in the first direction of the first gate is greater than the length in the second direction. The length in the first direction of the first magnetoresistance effect element is greater than the length in the first direction of the first gate. A first gate length direction that joins the first active region and the second active region crosses the first direction.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
H01L 43/08 - Résistances commandées par un champ magnétique
The present invention provides an all-solid-state secondary battery which is provided with: a multilayer body that is obtained by stacking a positive electrode layer that contains a positive electrode active material and a negative electrode layer that contains a negative electrode active material, with a solid electrolyte layer being interposed therebetween; a positive electrode external terminal which is bonded to the positive electrode layer at a first surface among the lateral surfaces of the multilayer body; and a negative electrode external terminal which is bonded to the negative electrode layer at a second surface that is different from the first surface. With respect to this all-solid-state secondary battery, the positive electrode layer expands in a direction from the first surface toward the second surface; the negative electrode layer expands in a direction from the second surface toward the first surface; and the multilayer body is provided with a void in at least one region that is selected from among a region that is surrounded by the positive electrode layer and the first surface, a region that is surrounded by the positive electrode layer, the solid electrolyte layer and the first surface, a region that is surrounded by the negative electrode layer and the second surface, and a region that is surrounded by the negative electrode layer, the solid electrolyte layer and the second surface.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
[Problem] To provide a thin-film capacitor having excellent heat radiation characteristics. [Solution] A thin-film capacitor 10 comprises: a lower electrode layer 11 made of a metal foil; an upper electrode layer 13 that covers one surface 11A of the lower electrode layer 11 with a dielectric layer 12 therebetween; a passivation layer 14 that covers the one surface 11A of the lower electrode layer 11 so as to have the dielectric layer 12 and the upper electrode layer 13 embedded therein; terminal electrodes 21, 22 provided on the passivation layer 14; a via conductor 31 that is provided so as to penetrate the passivation layer 14 and that connects the terminal electrode 21 and the lower electrode layer 11; and a via conductor 32 that is provided so as to penetrate the passivation layer 14 and that connects the terminal electrode 22 and the upper electrode layer 13. The terminal electrode 21 has a larger plane size than the terminal electrode 22, and the via conductor 31 has a larger cross-sectional area than the via conductor 32.
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
This code conversion method comprises a conversion step for converting a first calculation model, in which options are expressed by a first expression method and which is applicable to an Ising model or a QUBO, into a second calculation model in which options are expressed by a second expression method and which is applicable to an Ising model or a QUBO. In the conversion step, simultaneous equations, in which components of energy obtained on the basis of the first calculation model match components of energy obtained on the basis of the second calculation model, are solved, and a Hamiltonian partial matrix to be used in arithmetic operation of the second calculation model is obtained.
This negative electrode active material layer comprises a negative electrode active material and a fibrous material. The negative electrode active material contains silicon. The fibrous material contains at least one type of substance selected from the group consisting of titanic oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The fiber length of the fibrous material falls within the range of 20 μm to 150 μm. The value of the layer thickness divided by the fiber length falls within the range of 0.4 to 1.0.
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
This non-reciprocal circuit element comprises a metal layer, a loss layer, and a magnet. The metal layer comprises a first terminal, a second terminal, and a third terminal. The loss layer comprises a magnetic body and an absorber. The magnetic body overlaps with a first region of the metal layer in a thickness direction. The absorber overlaps with a second region of the metal layer in the thickness direction. The magnet and the metal layer sandwich at least the magnetic body in the thickness direction. When viewed from the thickness direction, the shortest width between a first side connecting the first terminal with the second terminal of the metal layer and a second side of the absorber on the first terminal/second terminal side is shorter than the width between a first straight line connecting both ends of the first side and a second straight line connecting both ends of the second side.
This negative electrode active material layer comprises a negative electrode active material and acicular particles. The negative electrode active material contains silicon. The acicular particles include at least one type selected from the group consisting of titanic oxide, potassium titanate, aluminum oxide, silicon carbide, silicon nitride, and silicon oxide. The length of the minor axis of the acicular particles falls within the range from 0.1 μm to 0.5 μm. The aspect ratio of the acicular particles falls within the range from 1.2 to 15.0.
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
This spin inductor comprises a layered body that includes: a first inductor layer; a spacer layer; and a second inductor layer. The first inductor layer comprises a first wiring layer and a first ferromagnetic layer that adjoins the first wiring layer. The second inductor layer comprises a second wiring layer and a second ferromagnetic layer that adjoins the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.
This magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer, wherein the nonmagnetic layer is present between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic layer undulates with respect to a flat plane that is perpendicular to the stacking direction.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
Provided is a calculation model that can be applied to the Ising model or QUBO, wherein a plurality of choices in a combinatorial optimization problem are assigned to any of the possible values of one or more binary variables, and one of the binary variables fixed on the basis of constraints imposed on the combinatorial optimization problem.
G06N 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
G06N 10/80 - Programmation quantique, p.ex. interfaces, langages ou boîtes à outils de développement logiciel pour la création ou la manipulation de programmes capables de fonctionner sur des ordinateurs quantiques; Plate-formes pour la simulation ou l’accès aux ordinateurs quantiques, p.ex. informatique quantique en nuage
33.
MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT
A magnetoresistive effect element according to the present invention is provided with a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is positioned between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic layer comprises a first central region and a first outer peripheral region that is positioned outside the first central region. The maximum thickness of the first outer peripheral region is larger than the average thickness of the first central region.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
34.
CIRCUIT BOARD AND METHOD FOR MANUFACTURING MOUNTING BOARD
This circuit board comprises a base material, at least a pair of terminals provided on the base material, a bonding material which includes a metal element and is disposed on the terminals, and a wall of an insulating material that rises from the base material in a height direction orthogonal to a main surface of the base material. The pair of terminals and the bonding material are disposed inside the wall, and at least one wall-frame portion of the wall has at least one groove portion formed therethrough from an inner peripheral surface to an outer peripheral surface thereof.
A battery (1) comprises: a positive electrode (3) including manganese dioxide and graphite; a negative electrode (5) containing zinc; an electrolyte in which the positive electrode (3) and the negative electrode (5) are immersed; and polyethyleneimine ethoxylate contained in the negative electrode (5) or in the electrolyte.
H01M 4/06 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour éléments primaires
H01M 6/08 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments primaires; Leur fabrication Éléments avec électrolyte aqueux Éléments secs, c. à d. éléments dans lesquels l'électrolyte est rendu non fluide avec des électrodes en forme de godets
Provided is a pulse wave detection system comprising: a detection unit that is brought into contact with an arm to be subjected to pulse wave detection; a swinging section that has the detection unit provided thereto and makes it possible to swing the detection unit; and a calculation unit that acquires a pulse wave signal on the basis of a signal detected by the detection unit.
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
37.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
An information processing device comprising a prescription candidate output unit that outputs output information containing Chinese herbal medicine candidate information indicating candidates of Chinese herbal medicines to be prescribed to a first subject, on the basis of first waveform information of a pulse waveform of the first subject.
G16H 20/10 - TIC spécialement adaptées aux thérapies ou aux plans d’amélioration de la santé, p.ex. pour manier les prescriptions, orienter la thérapie ou surveiller l’observance par les patients concernant des médicaments ou des médications, p.ex. pour s’assurer de l’administration correcte aux patients
G16H 50/00 - TIC spécialement adaptées au diagnostic médical, à la simulation médicale ou à l’extraction de données médicales; TIC spécialement adaptées à la détection, au suivi ou à la modélisation d’épidémies ou de pandémies
38.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing device comprises a prescription candidate output unit that, on the basis of a first time frequency spectrum image indicating a first time frequency spectrum corresponding to a waveform of a pulse wave of a first subject, outputs output information including Chinese medicine candidate information which indicates a candidate of a Chinese medicine to be prescribed to the first subject.
G16H 20/10 - TIC spécialement adaptées aux thérapies ou aux plans d’amélioration de la santé, p.ex. pour manier les prescriptions, orienter la thérapie ou surveiller l’observance par les patients concernant des médicaments ou des médications, p.ex. pour s’assurer de l’administration correcte aux patients
G16H 50/20 - TIC spécialement adaptées au diagnostic médical, à la simulation médicale ou à l’extraction de données médicales; TIC spécialement adaptées à la détection, au suivi ou à la modélisation d’épidémies ou de pandémies pour le diagnostic assisté par ordinateur, p.ex. basé sur des systèmes experts médicaux
A measurement device according to this embodiment comprises: a first fixing body; a sensor fixing body that fixes a sensor for detecting a biological signal; and said sensor, wherein the measurement device has a structure in which the first fixing body and the sensor fixing body are separated.
[Problem] To provide a magnetism detection system which is capable of measuring magnetism over a wide range while using a reduced number of magnetic sensors. [Solution] A magnetism detection system 100 comprises: a shield box 200 which has magnetic shields S1-S3 that surround a measurement space 230; a magnetic sensor 40 which is fixed to the shield box 200 in the measurement space 230; a sample stage 300, at least part of which is inserted into the measurement space 230; and driving mechanisms 141-143 which change the relative positional relation of the sample stage 300 and the shield box 200. Thus, the relative positional relation of the sample stage 300 and the shield box 200 can be changed by the driving mechanisms 141-143, and it is therefore possible to measure magnetism over a wide range with one magnetic sensor 40 or a small number of magnetic sensors 40.
[Problem] To provide an antenna module having an electronic component such as an RFIC is built in. [Solution] An antenna module 100 comprising a core substrate C, an outermost insulating layer 10, and a resin layer 20 that is provided therebetween and has an RFIC 60 embedded therein. The core substrate C has: a core layer 40; insulating layers 30 and 50 that sandwich the core layer 40; conductor layers L3-L5 and an antenna layer L6; a through-hole conductor 70 that connects power-feed patterns F1, F2; a via conductor 71 that connects power-feed patterns F1, F3; and a via conductor 72 that connects an antenna pattern ANT and the power-feed pattern F2. The resin layer 20 has a conductor layer L2 connected to an RFIC 60. The thickness of the conductor layer L3 is thicker than the thickness of the conductor layer L2, and as a result, cracking and disconnection in the conductor layer L3 are made less likely to occur while causing the conductor layer L2 to have a fine pitch.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Inoue Yukari
Terada Tomohiro
Kimura Junichi
Uehara Masato
Hirata Kenji
Yamada Hiroshi
Akiyama Morito
Abrégé
Provided is a nitride that comprises zinc and a group 4 element. The group 4 element contained in the nitride is at least one element from the group consisting of titanium and zirconium. The zinc content of the nitride is expressed as [Zn] at%. The total group 4 element content of the nitride is expressed as [M] at%. In the nitride, [M] / ([Zn] + [M]) is greater than 20% and less than 50%.
H10N 30/00 - Dispositifs piézo-électriques ou électrostrictifs
H10N 30/074 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par dépôt de couches piézo-électriques ou électrostrictives, p.ex. par impression par aérosol ou par sérigraphie
H10N 30/079 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par dépôt de couches piézo-électriques ou électrostrictives, p.ex. par impression par aérosol ou par sérigraphie à l’aide de couches intermédiaires, p.ex. pour contrôler la croissance
H10N 30/09 - Formation de matériaux piézo-électriques ou électrostrictifs
H10N 30/20 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique, p.ex. fonctionnant comme actionneurs ou comme vibrateurs
H10N 30/30 - Dispositifs piézo-électriques ou électrostrictifs à entrée mécanique et sortie électrique, p.ex. fonctionnant comme générateurs ou comme capteurs
H10N 30/40 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie électrique, p.ex. fonctionnant comme transformateurs
This fixation structure comprises: a structural body; a first magnetic part and a second magnetic part facing each other in a first direction, and fixed to the structural body; and a spacer member disposed between the first magnetic part and the second magnetic part. A gap is formed in the first direction between the spacer member and the structural body to absorb positional errors of the first magnetic part and the second magnetic part in the first direction.
F16B 1/00 - Dispositifs pour assembler des éléments structuraux ou parties de machines ou bien pour empêcher tout mouvement relatif entre eux
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
H01F 37/00 - Inductances fixes non couvertes par le groupe
H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu
[Problem] To mitigate the discontinuity of impedance while securing the symmetry of a differential signal line. [Solution] A coil component 100 comprises: coils C1, C2 which are embedded in a body 50 containing a magnetic material and are arranged in an X-direction with a Z-direction serving as an axial direction; terminal electrodes 61, 62 which are connected to one end and the other end of the coil C1, respectively; and terminal electrodes 63, 64 which are connected to one end and the other end of the coil C2, respectively. The terminal electrodes 62, 61, 63, 64 are exposed from a mounting surface 51, and arranged in this order in the X-direction. A region where no magnetic material is present is included between the coils C1 and C2. Accordingly, due to the weakening of the coupling between the coils C1 and C2, it is possible to prevent a deterioration in signal quality of a differential signal.
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
H01F 17/00 - Inductances fixes du type pour signaux
This conductive film comprises: a substrate 1; a first resin layer 10 provided on the substrate 1; a second resin layer 20 which is provided on the first resin layer 10 and has a trench 25 open in a surface on the opposite side to the first resin layer 10; and a conductive layer 30 provided on the trench 25. The first resin layer 10 includes a first resin section 12 and a plurality of first inorganic particles 11. At least some of the plurality of inorganic particles 11 partially bulge from the first resin section 12 toward the second resin layer 20 side.
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
46.
PROJECTOR MODULE AND RETINAL PROJECTION DISPLAY DEVICE COMPRISING SAME
This projector module (10000) can be used in a retinal projection display device, and is movable via a moving means. The projector module (10000) comprises a laser module (1000) having a plurality of laser chips, a collimation lens (2000) that converts light from the laser module (1000) into parallel light rays, and a light scanning device (3000) that changes the direction of and scans the light from the collimation lens (2000), and the relative positions of the laser module (1000), the collimation lens (2000), and the light scanning device (3000) are fixed.
00) before stretching at most equal to 2×10-2 [Ωmm], wherein: the metal powder includes scale-like powder; and the proportion of the resin is 8 wt% to 20 wt% inclusive.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
This nickel hydrogen secondary battery 2 comprises an outer can 10 having an opening on the upper edge thereof, an electrode group 22 accommodated together with an alkaline liquid electrolyte within the outer can 10, and a sealing body 11 secured by crimping to the opening portion of the outer can 10 with a gasket 12 interposed therebetween, the gasket 12 containing a polyamide resin having a weight-average molecular weight of 40,000 or greater.
The present invention relates to a conductive film provided with a film-like base material and a conductive layer provided on one major surface side of the base material. The conductive layer comprises a first metal layer including a first metal, and a second metal layer including a second metal different from the first metal, the first and second metal layers being provided in order from the base material side. The first metal layer contains a grain boundary.
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
The rectenna device according to the one embodiment of the present invention comprises: an antenna unit which can receive microwaves; rectification circuits which are connected to the antenna unit and can rectify electric power signals supplied from the antenna unit; an electric power conversion circuit which can generate DC electric power on the basis of output electric power of the rectification circuits; and a control circuit which can control an operation of the electric power conversion circuit on the basis of output currents of the rectification circuits.
H02J 50/27 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence caractérisés par le type d'antennes de réception, p.ex. les antennes redresseuses
This rectenna device according to one embodiment of the present invention comprises: an antenna unit that is able to receive microwaves; a plurality of rectifying circuits that are each connected to the antenna unit and capable of rectifying power signals supplied from the antenna unit; a plurality of power conversion circuits that are respectively provided in correspondence to the plurality of rectifying circuits and are capable of generating direct current power on the basis of the output power of the corresponding rectifying circuit; a power output terminal that is connected to output terminals of the plurality of power conversion circuits; and a plurality of correction control circuits that are respectively provided in correspondence to the plurality of rectifying circuits and respectively provided in correspondence to the plurality of power conversion circuits, and that are each capable of correcting the output voltage of the corresponding power conversion circuit on the basis of one or more of the output voltage, the output current, and the circuit temperature of the corresponding rectifying circuit.
H02J 50/27 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence caractérisés par le type d'antennes de réception, p.ex. les antennes redresseuses
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
54.
SAMARIUM-IRON-NITROGEN BASED MAGNET POWDER AND SAMARIUM-IRON-NITROGEN BASED MAGNET
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Hashimoto, Ryuji
Okada, Shusuke
Abrégé
A samarium-iron-nitrogen based magnet powder, including a lanthanoid (Ln), iron (Fe), bismuth (Bi), tungsten (W), and nitrogen (N), wherein: the lanthanoid includes samarium (Sm); by atom ratio, the ratio ((Bi/(Ln+Fe+Bi+W)) of bismuth relative to the sum of the lanthanoid+iron+bismuth+tungsten is 1.00 at% or less; by atom ratio, the ratio ((W/(Ln+Fe+Bi+W)) of tungsten relative to the sum of the lanthanoid+iron+bismuth+tungsten is 0.05-0.60 at%; and by atom ratio, the ratio (W/Bi) of tungsten relative to bismuth is 1.0-30.0.
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p.ex. SmCo5 et des éléments Va, p.ex. Sm2Fe17N2
B22F 1/00 - Poudres métalliques; Traitement des poudres métalliques, p.ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/17 - Particules métalliques revêtues de métal
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittage; Appareils spécialement adaptés à cet effet
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p.ex. de poudre
[Problem] To lower the on-resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed from a gallium oxide; an anode electrode 40 and a p-type semiconductor layer 60 that are in contact with the drift layer 30; an n-type semiconductor layer 70 that is in contact with the anode electrode 40 and the drift layer 30; a metal layer 80 that is provided between the n-type semiconductor layer 70 and the p-type semiconductor layer 60; and a cathode electrode 50 that is in contact with the semiconductor substrate 20. The on-resistance is thus lowered in the lead up to the forward current flowing to the p-n junction section since the n-type semiconductor layer 70 functions as a current path.
The present invention provides a crucible G which is used for the growth of an oxide single crystal, and is provided with a plurality of oxide plates G1 to G10 that are stacked on and bonded with each other in the thickness direction; and the respective additive concentrations in the oxide plates G1 to G10 are different from each other. A crystal production method according to the present invention grows an oxide single crystal by bringing a seed crystal into contact with the exposed surface of a melt in a crucible and moving the position of the exposed surface in the vertical direction. With respect to a single crystal of gallium oxide, it is preferable that the additive concentrations in the growth axis direction are within the range of ±5% of the average.
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p.ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
A power converter according to an aspect of the present invention comprises: a first power terminal; a switching unit; a transformer; a rectification unit having a switching circuit including first and second switching elements; a smoothing unit; a second power terminal; a control unit; and a drive unit capable of driving the switching circuit. The switching circuit has a first element provided in a first path connecting a control terminal with a first terminal of the first switching element and capable of clamping a voltage. The drive unit can output a first control signal from a first output terminal and output a second control signal from a second output terminal. The control unit can control the operation so that power is supplied from the second power terminal toward the first power terminal in a period different from a period during which power is supplied from the first power terminal toward the second power terminal, and can also set the output impedance of the first output terminal in the drive unit to a high impedance state.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
An information processing device according to one embodiment of the present invention comprises: a plurality of magnetic circuits; at least one input terminal that is connected to at least one of the plurality of magnetic circuits; at least one output terminal that is connected to at least one of the plurality of magnetic circuits; and at least one connection unit that electrically or magnetically couples at least two of the magnetic circuits from among the plurality of magnetic circuits.
[Problem] To increase the surge resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed from a gallium oxide; an anode electrode 40 that is in contact with the drift layer 30; a cathode electrode 50 that is in contact with the semiconductor substrate 20; and a p-type semiconductor layer 60 that is in contact with the anode electrode 40 and the drift layer 30. The p-type semiconductor layer 60 includes a first p-type semiconductor layer 61 that is in contact with the anode electrode 40 and a second p-type semiconductor layer 62 that is in contact with the drift layer 30. The upper-end level of the valence band of the second p-type semiconductor layer 62 is lower than the upper-end level of the valence band of the first p-type semiconductor layer 61. Surge resistance can thus be increased since the two p-type semiconductor layers 61, 62 having different energy levels are used.
This learning program is for, in a neural network or a dynamical system, performing calculation for updating an estimated value of a weight or a state variable. The learning program performs: a first calculation for obtaining, from a pre-updated weight, a Karman gain by using an ensemble Karman filter method; a second calculation for adding, to the pre-updated weight, a result obtained by multiplying, by the Karman gain, an error between a training signal and an inference result using the pre-updated weight to obtain a post-updated weight in a first bit expression; and a third calculation for performing bit quantization of the post-updated weight represented by the first bit expression and for changing the result obtained therefrom to a second bit expression in which the word length and the length of a decimal part are shorter than those in the first bit expression.
[Problem] To provide a sensor holder having improved operation efficiency in sensor positioning. [Solution] A magnetic sensor holder 100 comprises: a sensor case 20; a sensor guide 30 into which the sensor case 20 is inserted; a lever 40 including a lock gear 44 engaged with a rack gear 23 so as to allow movement of the sensor case 20 in a +Z direction and to inhibit movement of the sensor case in a -Z direction; a coil spring 50 which comprises a non-magnetic body and which biases the sensor case 20 in the -Z direction; and an elastic body ring 60 that biases the lever 40 so as to maintain the engaged state between the rack gear 23 and the lock gear 44. When a ratchet releasing operation is carried out by using the lever 40, the movement of the sensor case 20 in the Z direction is enabled.
A bonded structure in which an electronic component and a wiring substrate are bonded to each other, the bonded structure comprising, in order from the electronic component side, a first metal layer comprising a metal that forms an inter-metallic compound with Sn, an inter-metallic compound layer composed of an inter-metallic compound comprising Sn, and a second metal layer comprising Sn, wherein the thickness of the second metal layer is less than or equal to 50% of a total of the thicknesses of the first metal layer, the inter-metallic compound layer, and the second metal layer.
34444 type crystal structure. With respect to this solid electrolyte layer (3), it is preferable that the ratio of the volume of the first phase region (31) to the volume of the second phase region (32) is 0.1 to 9.
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
34444-type crystal structure. Preferably, the ratio of the volume of the first phase region (31) to the volume of the second phase region (32) in the solid electrolyte layer (3) according to the present invention is 0.1 to 9.
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
In the present invention, an antenna pattern has: a radiation conductor; a first power feed line and a second power feed line that are drawn out from the radiation conductor to an end part side of a substrate and that feed power to the radiation conductor; and a first terminal and a second terminal respectively connected to the first power feed line and the second power feed line. A ground pattern has: a center part disposed between the first terminal and the second terminal; a first lateral part disposed so as to sandwich the first terminal between the first lateral part and the center part; a second lateral part disposed so as to sandwich the second terminal between the second lateral part and the center part; a first connection part for connecting the center part and the first lateral part to each other; and a second connection part for connecting the center part and the second lateral part to each other. The first connection part extends between the first terminal and the end part of the substrate, on one main surface of the substrate. The second connection part extends between the second terminal and the end part of the substrate, on the one main surface of the substrate.
H01Q 13/08 - Terminaisons rayonnantes de lignes de transmission micro-ondes à deux conducteurs, p.ex. lignes coaxiales ou lignes micro-rayées
H01Q 1/38 - Forme structurale pour éléments rayonnants, p.ex. cône, spirale, parapluie formés par une couche conductrice sur un support isolant
H01Q 21/08 - Réseaux d'unités d'antennes, de même polarisation, excitées individuellement et espacées entre elles les unités étant espacées le long du trajet rectiligne ou adjacent à celui-ci
H01Q 21/24 - Combinaisons d'unités d'antennes polarisées dans des directions différentes pour émettre ou recevoir des ondes polarisées circulairement ou elliptiquement ou des ondes polarisées linéairement dans n'importe quelle direction
67.
MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY
This magnetization rotating element comprises a spin-orbit torque wire and a first ferromagnetic layer connected to the spin-orbit torque wire, wherein the spin-orbit torque wire includes an amorphous structure, and the amorphous structure is any one among an oxide, nitride, and oxynitride.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
68.
MAGNETIC ARRAY, CONTROL METHOD FOR MAGNETIC ARRAY, AND OPERATION PROGRAM FOR MAGNETIC ARRAY
This magnetic array comprises: a plurality of magnetoresistance effect elements; and a pulse application device that applies a pulse to at least one of the plurality of magnetoresistance effect elements. Each of the plurality of magnetoresistance effect elements comprises: a domain wall movement layer; a ferromagnetic layer; and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer. The pulse application device outputs a first pulse and a second pulse at different times. The voltages of the first pulse and the second pulse are both voltages by which it is possible to attain a current density greater than or equal to the critical current density required to move the domain wall of the domain wall movement layer. The second pulse is greater in voltage or pulse length than the first pulse. The pulse application device outputs the second pulse every set number of times that the first pulse is outputted or at a set probability.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G06F 12/00 - Accès à, adressage ou affectation dans des systèmes ou des architectures de mémoires
G06G 7/60 - Calculateurs analogiques pour des procédés, des systèmes ou des dispositifs spécifiques, p.ex. simulateurs d'êtres vivants, p.ex. leur système nerveux
This transmission path comprises a line portion that linearly extends in a first direction on one major surface side of a dielectric, and a terminal portion that is connected to the end of the line portion. The line portion includes an open conductor portion having a conductor pattern with an opening, and a planar conductor portion that is electrically connected to the open conductor portion and in which a conductor lies in planar form. The planar conductor portion is spaced apart from the terminal portion in the first direction. The length of the planar conductor portion in the first direction is greater than or equal to the length thereof in a second direction orthogonal to the first direction.
abc4defh234364733234273941161834273103523242526272846243333222265322444466664444, HCOO, and O, and X is at least one element selected from the group consisting of F, Cl, Br, and I, 0.5 ≤ a < 6, 0 ≤ b < 6, 0 < c < 2, 0.1 < d ≤ 6.0, 0 < e ≤ 6.0, 0 < f ≤ 6.1, and 0 ≤ h ≤ 0.2 are satisfied, and in an X-ray diffraction pattern with CuKα as the radiation source, a peak is confirmed at diffraction angle 2θ = 22.3°±1.0°.
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
This neuromorphic device has a plurality of paired elements, and a control device that controls each of the plurality of paired elements. Each of the plurality of paired elements includes a first magnetoresistive element, a second magnetoresistive element, and a readout electrode shared by the first and second magnetoresistive elements. The first magnetoresistive element and the second magnetoresistive element each have a reference layer, a magnetic recording layer, a non-magnetic layer, and two electrodes. The readout electrodes are connected across the reference layers of the first magnetoresistive element and the second magnetoresistive element. In a specific pair of elements from which signals are read, the control device reverses the flow direction of the read current, the flow direction being from the reference layer to the magnetic recording layer or from the magnetic recording layer to the reference layer, by means of the first magnetoresistive element and the second magnetoresistive element.
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
72.
CURRENT COLLECTOR, ELECTRODE FOR POWER STORAGE DEVICE, AND LITHIUM ION SECONDARY BATTERY
A current collector according to the present invention includes a resin layer 10 having a first surface, and a first metal layer 20 located at the first surface. The first metal layer contains aluminum as a main component, the thickness d of the first metal layer is 0.5-3 μm, and d and r satisfy the following formula (1), where r is the peak intensity ratio B/A, A being the intensity of the highest X-ray diffraction peak at a diffraction angle (2θ) in the range of 36-41° and B being the intensity of the highest X-ray diffraction peak at a diffraction angle (2θ) in the range of 43-48° in the measurement of the first metal layer by the X-ray diffraction method.
This magnetized rotary element comprises: spin-orbit torque wiring; and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which conductors are dispersed.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
74.
SENSOR CHIP, MAGNETIC SENSOR COMPRISING SAME, AND MAGNETIC SENSOR PRODUCTION METHOD
[Problem] To precisely position an external magnetic body with respect to a sensor chip. [Solution] After a sensor chip 20 is mounted on a substrate 10, an external magnetic body 30 is mounted on the substrate 10 so as to overlap with a magnetic body layer M1 in a view from a Y direction perpendicular to an element formation surface 21. At this time, the position of the external magnetic body 30 in an X direction is adjusted with reference to alignment marks 60, 61 which are provided to the sensor chip 20 and are visible from the upper surface 25 side of the sensor chip 20. Thus, it is possible to achieve a desired positional relation between the sensor chip 20 and the external magnetic body 30 at the time of assembly.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p.ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
[Problem] To provide a thin film capacitor in which a pair of terminal electrodes can be disposed on the same surface. [Solution] A thin film capacitor 1 is provided with: metal foil 10 that has an unroughened central section 13 and a roughened upper surface 11; a dielectric film D that covers the roughened upper surface 11 of the metal foil 10; an electrode layer 31 that is in contact with the metal foil 10; an electrode layer 32 that is not in contact with the metal foil 10 and is in contact with the dielectric film D; and an insulation member 21 disposed between the electrode layers 31, 32. The metal foil 10 has a groove 14 that is provided so as to penetrate the surface layer portion of the roughened metal foil 10 and exposes the unroughened central section 13. The insulation member 21 is in contact with the central section 13 of the metal foil 10 that is exposed at the bottom of the groove 14.
[Problem] To provide a thin film capacitor having a large capacitance. [Solution] A thin film capacitor 1 comprises: a metal foil 10, the main surfaces 11, 12 of which have been roughened; a dielectric film 13 which covers the main surfaces 11, 12; an electrode layer E1 which contacts the metal foil 10 via an opening provided in the dielectric film 13 and a surface of which is constituted by a metal terminal 41; an electrode layer E2 which contacts the dielectric film 13 without contacting the metal foil 10 and a surface of which is constituted by a metal terminal 42; and an electrode layer E3 which contacts the dielectric film 13 without contacting the metal foil 10. The electrode layers E2, E3 include an electrically conductive polymer layer 30 which contacts the dielectric film 13.
H01G 4/33 - Condensateurs à film mince ou à film épais
H01G 9/00 - Condensateurs électrolytiques, redresseurs électrolytiques, détecteurs électrolytiques, dispositifs de commutation électrolytiques, dispositifs électrolytiques photosensibles ou sensibles à la température; Procédés pour leur fabrication
H01G 9/012 - Bornes spécialement adaptées pour les condensateurs à solides
This resin cured product exhibits the scattering intensity peak maximum value when the scattering angle 2θ is in the range of 0.2° to 5° in a scattering profile measured by a small-angle X-ray scattering method, and exhibits a diffraction intensity peak when the diffraction angle 2θ is in the range of 10° to 25° and when the diffraction angle 2θ is in the range of 40° to 50° in a diffraction profile measured by a wide-angle X-ray diffraction method. The ratio of the maximum diffraction intensity peak P2 when the diffraction angle 2θ is in the range of 40° to 50° to the maximum diffraction intensity peak P1 when the diffraction angle 2θ is in the range of 10° to 25° is 0.15 or greater.
C08G 59/00 - Polycondensats contenant plusieurs groupes époxyde par molécule; Macromolécules obtenues par réaction de polycondensats polyépoxydés avec des composés monofonctionnels à bas poids moléculaire; Macromolécules obtenues par polymérisation de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde
According to the present invention, an internal electrode layer 3 includes therein a plurality of inner ceramic particles 36a within an observation range of a cross-section intersecting the internal electrode layer 3. The position of the inner ceramic particles 36a in the internal electrode layer 3 relative to the center position of the internal electrode layer 3 in the thickness direction is correlated with the position from the center position to the edge position, and the corresponding positions are indicated by the numbers 0-100. Such an index is referred to as Dsp. Inside the internal electrode layer 3, within a region of Dsp of 40 or less, preferably 30 or less, the inner ceramic particles 36a are present in an area of at least 50% of the total area of the inner ceramic particles 36a present within the observation range.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/136 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p.ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p.ex. phosphates, silicates ou borates
An all-solid-state battery comprising a sintered body that has a positive electrode, a negative electrode, and a solid electrolyte layer interposed between the positive electrode and the negative electrode, wherein: the positive electrode contains an Ag-containing compound, a Li-containing transition metal oxide, and an oxide having a different composition from Li transition metal oxide; the oxide contains Ag; and at least some of the Ag-containing compound and the Li transition metal oxide are present on the interior of the positive electrode with the oxide therebetween.
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
A magnetic component according to an embodiment of the present invention comprises: a first substrate portion and a second substrate portion facing each other; a magnetic core that is provided on a surface of the second substrate portion facing the first substrate portion, and comprising five leg portions that magnetically couple the first substrate portion and the second substrate portion together, the five leg portions including a first leg portion, a second leg portion, a third leg portion, a fourth leg portion, and a fifth leg portion, the second leg portion and the third leg portion being disposed with the first leg portion therebetween in a first direction, the fourth leg portion and the fifth leg portion being disposed with the first leg portion therebetween in a second direction; a first winding wound around the five leg portions; and one or a plurality of second windings wound around four of the five leg portions other than the first leg portion. The first substrate portion has one or more recesses or one or more through holes that are provided in positions corresponding to one or more leg portions among the five leg portions.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
85.
GLASS CERAMIC SINTERED BODY, GLASS CERAMIC SUBSTRATE, AND WIRING SUBSTRATE
[Problem] To provide a glass ceramic sintered body that, in a high frequency band, demonstrates low dielectric loss and only small changes in the dielectric loss relative to the frequency. [Solution] Provided is a glass ceramic sintered body containing glass and a filler. The glass contains at least either borosilicate glass or aluminoborosilicate glass. The filler includes a BN filler, which is formed from boron nitride. The content of the glass is 55 mass% to 95 mass%. The content of the BN filler is 5 mass% to 45 mass%.
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
C04B 35/16 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base de silicates autres que l'argile
H01B 3/02 - Isolateurs ou corps isolants caractérisés par le matériau isolant; Emploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances inorganiques
86.
NON‐RECIPROCAL CIRCUIT ELEMENT AND METHOD FOR MANUFACTURING NON‐RECIPROCAL CIRCUIT ELEMENT
This non‐reciprocal circuit element comprises: a case; a plurality of non‐reciprocal circuit boards housed in the case; and a plurality of terminals connected to the outer surface of the case. Adjacent ones of the non‐reciprocal circuit boards are arranged to face each other. Each of the non‐reciprocal circuit boards is provided with a metal layer, a first insulating layer, a loss layer, and a first magnetic field application layer, which are sequentially laminated in the thickness direction. In each of the non‐reciprocal circuit boards, a signal is non‐reciprocally transmitted between a first end and a second end. The first and second ends of each of the non‐reciprocal circuit boards are respectively connected to different terminals among the plurality of terminals.
H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes
87.
THIN FILM CAPACITOR, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC CIRCUIT BOARD PROVIDED WITH THIN FILM CAPACITOR
[Problem] To provide a thin film capacitor in which a pair of terminal electrodes can be disposed on the same surface. [Solution] A thin film capacitor 1 comprises a metal foil 10 having an unroughened central portion 13 and a roughened upper surface 11, a dielectric film D covering the roughened upper surface 11 of the metal foil 10, an electrode layer 31 contacting the unroughened central portion 13 of the metal foil 10 through an opening portion provided in the dielectric film D, and an electrode layer 32 contacting the dielectric film D without contacting the metal foil 10. The central portion 13 of the metal foil 10 has a thickness T1 at a position overlapping with the electrode layer 31 than a thickness T2 at a position overlapping with the electrode layer 32.
[Problem] To provide a thin film capacitor in which a pair of terminal electrodes can be positioned on the same surface. [Solution] A thin film capacitor 1 comprises a metal foil 10 having a roughened surface, a dielectric film D that covers the surface of the metal foil 10 and that has an opening through which the metal foil 10 is partially exposed, an electrode layer 31 that contacts the metal foil 10 via the opening, and an electrode layer 32 that contacts the dielectric film D but does not contact the metal foil 10. The top surface of the electrode layer 32 is at the same position or lower than the top surface position of the electrode layer 31.
[Problem] To electrically connect a lead layer and a protective film reliably even when the film thickness of a protective film that covers a functional film is extremely thin. [Solution] After the conductive protective film 51 is formed on the surface of the functional film 20, reverse sputtering is performed while a portion of the surface of the protective film 51 is covered with a mask 60, thereby physically restoring a natural oxide film 52 formed on the surface of the protective film 51 not covered by the mask 60. Thereafter, a lead layer 40 is formed on the surface of the protective film 51 not covered by the mask 60. Consequently, since the natural oxide film 52 formed on the surface of the protective film 51 can be removed without performing etching, the lead layer 40 and the protective film 51 can be connected electrically without damaging the functional layer 20 even when the film thickness of the protective film 51 is extremely thin.
H01L 43/08 - Résistances commandées par un champ magnétique
H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
90.
SIGNAL PROCESSING METHOD, SIGNAL PROCESSING DEVICE, AND PROGRAM
A signal processing method according to an embodiment of the present invention involves executing: a first process for acquiring a first sensor signal that is a sensor signal measured by a first sensor and that includes a component of a target signal and a component of ambient noise, and a second sensor signal that is a sensor signal measured by a second sensor and that includes a component of the target signal and a component of the ambient noise; a second process for generating a first processed signal obtained by removing, from the second sensor signal, the component of the target signal included in the second sensor signal; and a third process for generating, on the basis of the first processed signal, a second processed signal obtained by removing, from the first sensor signal, the component of the ambient noise included in the first sensor signal.
G01N 27/72 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques
91.
NEGATIVE ELECTRODE FOR SOLID ELECTROLYTE BATTERY, AND SOLID ELECTROLYTE BATTERY
abcdd... (1). In formula (1), A is Li, or Li and at least one of Na or Ca, E is at least one element selected from the group consisting of Al, Sc, Y, Zr, Hf, and lanthanoid, G is a prescribed group, and X is at least one element selected from the group consisting of F, Cl, Br, and I, where 0.5 ≤ a < 6, 0 < b < 2, 0.1 < c ≤ 6, and 0 < d ≤ 6.1 are satisfied.
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
In the present invention, a battery 1 comprises an outer can 2, an electrode group 4 housed together with an alkaline electrolyte in the outer can 2, and a sealing body 14 that seals the outer can 2. The electrode group 4 is formed by a positive electrode 6 and a negative electrode 8 being stacked with a separator 10 interposed therebetween and being wound in spiral form, to form a cylinder shape overall, a negative electrode protruding edge part 12 from which a portion of the negative electrode 8 partially protrudes being positioned at the lower end face part in the electrode group 4, and the negative electrode protruding edge part 12 being in direct contact with the inner surface of a bottom wall 90 of the outer can 2.
H01M 4/24 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs alcalins
H01M 50/107 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie caractérisés par leur forme ou leur structure physique ayant une section transversale courbe, p.ex. ronde ou elliptique
H01M 50/128 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie caractérisés par le matériau ayant une structure en couches comprenant au moins trois couches dont au moins deux couches de matériaux inorganiques uniquement
H01M 50/152 - Couvercles caractérisés par leur forme pour des cellules ayant une section transversale courbée, p.ex. ronde ou elliptique
H01M 50/531 - Connexions d’électrodes dans un boîtier de batterie
H01M 50/533 - Connexions d’électrodes dans un boîtier de batterie caractérisées par la forme des conducteurs ou des languettes
H01M 50/545 - Bornes formées par le boîtier de l’élément
This magnetic element (10) comprises a first ferromagnetic layer (1), a second ferromagnetic layer (2), and an intermediate layer (3). The intermediate layer is between the first ferromagnetic layer and the second ferromagnetic layer, the magnetization of the first ferromagnetic layer and the magnetization of the second ferromagnetic layer have an antiferromagnetic coupling component, and at least one of the first ferromagnetic layer, the second ferromagnetic layer, and the intermediate layer does not exhibit reflection symmetry or translational symmetry in a first direction within the plane in which the layer expands.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
[Problem] To suppress crosstalk in a coil component in which a plurality of inductors are incorporated. [Solution] A coil component 1 is provided with: a magnetic support layer 10; a first coil pattern C1 disposed on a first major surface 11 of the magnetic support layer 10; a second coil pattern C2 disposed on a second major surface 12 of the magnetic support layer 10; a first magnetic resin layer 31 in which the first coil pattern C1 is embedded; and a second magnetic resin layer 32 in which the second coil pattern C2 is embedded. The magnetic support layer 10 has a higher permeability than the first and second magnetic resin layers 31, 32. Thus, because the permeability of the magnetic support layer 10 is higher, magnetic coupling of the first coil pattern C1 and the second coil pattern C2 can be suppressed.
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
H01F 27/00 - AIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES - Détails de transformateurs ou d'inductances, en général
[Problem] To reduce the influence of disturbance noise in a magnetic sensor having an external magnetic body around which a compensation coil is wound. [Solution] A magnetic sensor 100 includes: an external magnetic body 30 that concentrates a magnetic field to be detected on a magneto-sensitive element; and a compensation coil C. The compensation coil C has: a solenoid portion C0 wound around the periphery of the external magnetic body 30; and lead portions C1 and C2 connecting both ends of the solenoid portion C0 to respective connection pins P1, P2. The lead portion C2 is connected to the connection pin P2 via the inner diameter region of the solenoid portion C0. As a result, the second lead portion is less susceptible to acting as an antenna, thus making it possible to reduce the influence of disturbance noise.
[Problem] To prevent damage to an external magnetic body for collecting magnetic flux to a magnetosensitive element in a magnetic sensor provided with the external magnetic body. [Solution] A magnetic sensor 100 comprises: a sensor chip 20 having an element-forming surface 21 on which magnetosensitive elements R1 to R4 are formed; an external magnetic body 30 having an end surface 33 which is positioned at a distal end in a longitudinal direction and which faces the element-forming surface 21, and side surfaces 34 to 36 configuring an outer peripheral surface of a cross section perpendicular to the longitudinal direction; and a protective resin 4 covering at least a portion of the element-forming surface 21 and the side surfaces 34 to 36 of the external magnetic body 30. It is thus possible to prevent damage to the sensor chip 20 and the external magnetic body 30 even if an impact is imparted from the outside.
This stretchable food-freshness sensor module (100) is provided with a stretchable resin substrate (10), a food freshness sensor (20) capable of detecting the degree of freshness of food, a wireless communication unit (30) for transmitting freshness information data detected by the food freshness sensor (20) to an external device, and a battery (40) for supplying power to the food freshness sensor (20) and the wireless communication unit (30), wherein the food freshness sensor (20), the wireless communication unit (30), and the battery (40) are disposed on the stretchable resin substrate (10).
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
A23L 3/00 - Conservation des aliments ou produits alimentaires, en général, p.ex. pasteurisation ou stérilisation, spécialement adaptée aux aliments ou produits alimentaires
98.
NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERIES, NEGATIVE ELECTRODE ACTIVE MATERIAL LAYER FOR LITHIUM ION SECONDARY BATTERIES, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERIES, AND LITHIUM ION SECONDARY BATTERY
This negative electrode active material for lithium ion secondary batteries comprises silicon particles having an average diameter of 0.1-10 µm inclusive, an average aspect ratio of 0.60-0.99 inclusive and an average circularity of 0.80-0.99 inclusive.
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/136 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p.ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
[Problem] To provide an environment in which a control device for controlling a controlled object can easily be verified. [Solution] This verification system comprises: a simulator for simulating an operating state of the controlled object; and a dummy device for generating a second signal relating to the controlled object instead of the simulator or the controlled object, in accordance with a first signal provided from a control device capable of controlling the controlled object, and providing the generated second signal to the control device or the simulator. The simulator generates a third signal indicating the simulated operating state of the controlled object on the basis of the second signal provided from the dummy device.
G05B 19/05 - Automates à logique programmables, p.ex. simulant les interconnexions logiques de signaux d'après des diagrammes en échelle ou des organigrammes
G05B 19/418 - Commande totale d'usine, c.à d. commande centralisée de plusieurs machines, p.ex. commande numérique directe ou distribuée (DNC), systèmes d'ateliers flexibles (FMS), systèmes de fabrication intégrés (IMS), productique (CIM)
100.
CURRENT COLLECTOR, ELECTRODE AND LITHIUM-ION SECONDARY BATTERY FOR ELECTRICAL STORAGE DEVICE, AND METHOD FOR MANUFACTURING CURRENT COLLECTOR
Provided is a current collector comprising: a resin layer having a first surface and a second surface on the opposite side of the first surface; and a metal layer containing copper, wherein the metal layer includes a first metal layer positioned on the first surface side of the resin layer, the yield stress σY1 of the current collector is smaller than the tensile breaking stress σB2 of the resin layer, the yield stress σY1 [MPa] of the current collector is a value obtained by the following equations (1) and (2) from the yield stress σY2 [MPa] of the resin layer, the thickness D2 [μm] of the resin layer, the yield stress σY3 [MPa] of the metal layer, and the thickness D3 [μm] of the metal layer, and the yield stress σY3 [MPa] of the metal layer is a value obtained by the following equation (3) from the half width β [°] of the X-ray diffraction peak showing the highest intensity in the X-ray diffraction pattern of the metal layer.