POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR LITHIUM ION BATTERIES, LITHIUM ION BATTERY, POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR ALL-SOLID LITHIUM ION BATTERIES, ALL-SOLID LITHIUM ION BATTERY, METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION BATTERIES, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID LITHIUM ION BATTERIES
A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1):
A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1):
LiaNibCOcMndMeOf (1)
A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1):
LiaNibCOcMndMeOf (1)
in which formula (1), 1.0≤a≤1.05, 0.8≤b≤0.9, b+c+d+e=1, 1.8≤f≤2.2, 0.0025≤e/(b+c+d+e)≤0.016, and M is at least one selected from Zr, Ta and W;
wherein WDX mapping analysis of positive electrode active material particles in a field of view of 50 μm×50 μm by FE-EPMA indicates that an oxide of the M adheres to surfaces of the positive electrode active material particles, and the oxide of the M is not present as independent particles that do not adhere to the surfaces of the positive electrode active material particles.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p.ex. LiMn2O4 ou LiMn2OxFy
An electromagnetic wave shielding material includes a metal layer for ground connection provided as an outermost layer of a laminate; wherein only one surface of the metal layer for ground connection is laminated on the insulating layer via the adhesive layer, and assuming d1 is a thickness and ε1 is a Young's modulus of the adhesive layer on the one surface, d2 is a thickness and ε2 is a Young's modulus of the metal layer for ground connection, and ε3 is a composite Young's modulus of the adhesive layer on the one surface and the metal layer for ground connection, the following relational expression is satisfied: ε3/ε2>0.60; in which, ε3=ε1 (d1/(d1+d2))+ε2 (d2 (d1+d2)).
Provided is a method for processing lithium ion battery waste, which can effectively precipitate aluminum ions and iron ions in the solution by neutralization and relatively easily separate the precipitate. The method for processing lithium ion battery waste includes: a leaching step of leaching battery powder in an acid, the battery powder containing at least aluminum and iron and being obtained from lithium ion battery waste, and removing a leached residue by solid-liquid separation to obtain a leached solution containing at least aluminum ions and iron ions; and a neutralization step of adding phosphoric acid and/or a phosphate salt and an oxidizing agent to the leached solution, increasing a pH of the leached solution to a range of 2.0 to 3.5, precipitating the aluminum ions and the iron ions in the leached solution as aluminum phosphate and iron phosphate, respectively, and removing a neutralized residue by solid-liquid separation to obtain a neutralized solution.
A sputtering target comprised of a plurality of members including a target material and a base material, wherein the plurality of members includes a first member and a second member laminated to each other, wherein the first member contains Al, and the second member contains Cu, wherein at least one of the first member and the second member contains Mg, wherein the sputtering target includes an alloy layer containing Al and Cu between the first member and the second member, the alloy layer being in contact with the first member and the second member, and wherein the alloy layer further includes an Mg-containing layer containing 5.0 at % or more of Mg in at least a part of the alloy layer.
B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p.ex. revêtement ou placage au moyen d'une presse
C22C 9/06 - Alliages à base de cuivre avec le nickel ou le cobalt comme second constituant majeur
C22C 21/06 - Alliages à base d'aluminium avec le magnésium comme second constituant majeur
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
5.
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a root mean square height Sq of 0.15 μm or less, as measured by a laser microscopy on the entire surface of the edge part.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
6.
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing cracks in indium phosphide substrates caused by edge irregularities and processing damage. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a maximum height Sz of 2.1 μm or less, as measured by a laser microscopy on the entire surface of the edge part.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.
C22C 9/06 - Alliages à base de cuivre avec le nickel ou le cobalt comme second constituant majeur
C22C 9/01 - Alliages à base de cuivre avec l'aluminium comme second constituant majeur
C22C 9/05 - Alliages à base de cuivre avec le manganèse comme second constituant majeur
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
A method for producing mixed metal salts containing manganese ions and at least one of cobalt ions and nickel ions, the method including: an Al removal step of subjecting an acidic solution containing at least manganese ions and aluminum ions, and at least one of cobalt ions and nickel ions, to removal of the aluminum ions by extracting the aluminum ions into a solvent, the acidic solution being obtained by subjecting battery powder of lithium ion batteries to a leaching step; and a precipitation step of neutralizing an extracted residual liquid obtained in the Al removal step under conditions where a pH is less than 10.0, to precipitate mixed metal salts comprising a metal salt of manganese and a metal salt of at least one of cobalt and nickel.
A copper powder containing copper particulates, wherein the copper powder has a number of particles with a particle size of 1.5 pm or more of 10000 or less per 10 mL of a solution, as measured in the solution using an in-liquid particle counter, the solution having a copper ion concentration of 10 g/L and being obtained by dissolving the copper particulates of the copper powder in nitric acid.
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p.ex. de solutions
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p.ex. par broyage, meulage ou écrasement à la meule
10.
METHOD FOR RECOVERING LITHIUM FROM LITHIUM ION BATTERY SCRAP
A method for recovering lithium from lithium ion battery scrap according to this invention comprises subjecting lithium ion battery scrap to a calcination step, a crushing step, and a sieving step sequentially carried out, wherein the method comprises, between the calcination step and the crushing step, between the crushing step and the sieving step, or after the sieving step, a lithium dissolution step of bringing the lithium ion battery scrap into contact with water and dissolving lithium contained in the lithium ion battery scrap in the water to obtain a lithium-dissolved solution; a lithium concentration step of solvent-extracting lithium ions contained in the lithium-dissolved solution and stripping them to concentrate the lithium ions to obtain a lithium concentrate; and a carbonation step of carbonating the lithium ions in the lithium concentrate to obtain lithium carbonate.
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p.ex. des rognures, pour produire des métaux non ferreux ou leurs composés
C22B 3/00 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
B09B 3/80 - Destruction de déchets solides ou transformation de déchets solides en quelque chose d'utile ou d'inoffensif impliquant une étape d'extraction
Provided is a method for selecting arsenic-containing minerals.
Provided is a method for selecting arsenic-containing minerals.
A peptide comprising an amino acids sequence according to the following formula:
Provided is a method for selecting arsenic-containing minerals.
A peptide comprising an amino acids sequence according to the following formula:
(T,S,N,Q)-(L,I,V,F,A)-(E,D)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(L,I,V,F,A)-(L,I,V,F,A)-(R,H,K)-(T,S,N,Q)-(T,S,N,Q)
Provided is a method for selecting arsenic-containing minerals.
A peptide comprising an amino acids sequence according to the following formula:
(T,S,N,Q)-(L,I,V,F,A)-(E,D)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(L,I,V,F,A)-(L,I,V,F,A)-(R,H,K)-(T,S,N,Q)-(T,S,N,Q)
wherein one amino acid is respectively selected from each group defined by paired parentheses.
B03D 1/018 - Mélanges de composés inorganiques et organiques
B03D 1/02 - Procédés de flottation par formation d'écume
C07K 7/08 - Peptides linéaires ne contenant que des liaisons peptidiques normales ayant de 12 à 20 amino-acides
C12N 15/70 - Vecteurs ou systèmes d'expression spécialement adaptés à E. coli
12.
METHOD FOR DISSOLVING LITHIUM COMPOUND, METHOD FOR MANUFACTURING LITHIUM CARBONATE, AND METHOD FOR RECOVERING LITHIUM FROM LITHIUM ION SECONDARY CELL SCRAP
A method for dissolving a lithium compound according to the present invention includes bringing a lithium compound into contact with water or an acidic solution, and feeding, separately from the lithium compound, a carbonate ion to the water or the acidic solution to produce carbonic acid, and allowing the carbonic acid to react with the lithium compound to produce lithium hydrogen carbonate.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/44 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés chimiques
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
B09B 3/80 - Destruction de déchets solides ou transformation de déchets solides en quelque chose d'utile ou d'inoffensif impliquant une étape d'extraction
13.
Sputtering Target, Manufacturing Method Therefor, And Manufacturing Method For Magnetic Recording Medium
A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C04B 35/58 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures
This copper alloy for an electronic material contains at most 1.0 mass% of Ni, 0.5-2.5 mass% of Co, and Si in an amount resulting in a mass ratio (Ni+Co)/Si to be 3-5, the remaining portion being copper and unavoidable impurities. The average Taylor factor of the copper alloy under plane strain that occurs when the copper alloy is extended in a direction perpendicular to the rolling direction and when the thickness of the copper alloy decreases is at most 3.5. The crystal grain size of the copper alloy is at most 10 μm. The 0.2% proof stress of the copper alloy in the rolling direction is at least 700 MPa. The conductivity of the copper alloy in the rolling direction is at least 50% IACS.
C22C 9/06 - Alliages à base de cuivre avec le nickel ou le cobalt comme second constituant majeur
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
2222 heater, the electrode part is provided with a metal film; and an oxide film that has a film thickness of 2.5 µm or less is arranged between the metal film and an MoSi2 base material.
H05B 3/03 - Chauffage par résistance ohmique - Détails Électrodes
H05B 3/12 - Eléments chauffants caractérisés par la composition ou la nature des matériaux ou par la disposition du conducteur caractérisés par la composition ou la nature du matériau conducteur
16.
EQUIPMENT AND METHOD FOR LEACHING COPPER, AND METHOD FOR PRODUCING ELECTROLYTIC COPPER USING SAID EQUIPMENT AND METHOD
Provided is a method for efficiently promoting a leaching reaction of copper. Equipment for leaching copper includes a reactor for leaching reaction and a controller for oxidation-reduction potential. The reactor is configured to be provided with a leaching solution containing iodine and iron. The reactor is configured to be capable of being tightly sealed during the leaching reaction. The controller for oxidation-reduction potential is configured so that, during the leaching reaction, the oxidation-reduction potential of the leaching solution can be maintained at 500 mV (based on Ag/AgCl reference) or higher.
The present disclosure addresses the problem of providing an oxide film having a low carrier concentration and high carrier mobility, and an oxide sputtering target suitable for forming said oxide film. Provided is an oxide film containing zinc (Zn), tin (Sn), aluminum (Al), and oxygen (O), the oxide film being characterized by satisfying expressions (1) through (3). In the expressions, Al, Sn, and Zn represent the atomic ratios of each respective element in the oxide film. (1): 3 × Sn/Zn < Al. (2): Al/(Al + Sn + Zn) ≤ 0.10. (3): 0.33 ≤ Sn/(Sn + Zn) ≤ 0.60.
Provided is a method for recovering a metal from lithium ion battery waste, the method comprising a wet treatment in which a metal including lithium in lithium-ion battery waste is leached with an acid, and the metal is extracted from a metal-containing solution in which the metal is dissolved, wherein the lithium extracted by means of the wet treatment is used as a pH adjuster used in the wet treatment.
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p.ex. des rognures, pour produire des métaux non ferreux ou leurs composés
B09B 3/40 - Destruction de déchets solides ou transformation de déchets solides en quelque chose d'utile ou d'inoffensif impliquant un traitement thermique, p.ex. évaporation
B09B 3/70 - Traitement chimique, p.ex. ajustement du pH ou oxydation
B09B 5/00 - Opérations non couvertes par une seule autre sous-classe ou par un seul autre groupe de la présente sous-classe
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/26 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par extraction liquide-liquide utilisant des composés organiques
C22B 3/44 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés chimiques
Provided is a method for efficiently recovering metals from lithium ion battery waste while reducing the use of sodium hydroxide as a pH adjuster. A method for recovering metals from lithium ion battery waste includes wet processing of leaching metals containing lithium from lithium ion battery waste with an acid, and extracting the metals from the metal-containing solution in which the metals are dissolved, in which the lithium extracted in the wet processing is used as a pH adjuster used in the wet processing.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/44 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés chimiques
C22B 3/00 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés
A method for producing a mixed metal solution containing manganese ions and at least one of cobalt ions and nickel ions, the method including: an Al removal step of subjecting an acidic solution containing at least manganese ions and aluminum ions, and at least one of cobalt ions and nickel ions, to removal of the aluminum ions by extracting the aluminum ions into a solvent while leaving at least a part of the manganese ions in the acidic solution in an aqueous phase, the acidic solution being obtained by subjecting battery powder of lithium ion batteries to a leaching step; and a metal extraction step of bringing an extracted residual liquid obtained in the Al removal step to an equilibrium pH of 6.5 to 7.5 using a solvent containing a carboxylic acid-based extracting agent, extracting at least one of the manganese ions and at least one of the cobalt ions and the nickel ions into the solvent, and then back-extracting the manganese ions and at least one of the cobalt ions and nickel ions.
Provided are sulfide-based solid electrolyte with good ionic conductivity and an all-solid lithium ion battery using the same. A sulfide-based solid electrolyte having an argyrodite-type structure, wherein a composition of the sulfide-based solid electrolyte is represented by the formula:
Provided are sulfide-based solid electrolyte with good ionic conductivity and an all-solid lithium ion battery using the same. A sulfide-based solid electrolyte having an argyrodite-type structure, wherein a composition of the sulfide-based solid electrolyte is represented by the formula:
Li8GeS5-xTe1+x
Provided are sulfide-based solid electrolyte with good ionic conductivity and an all-solid lithium ion battery using the same. A sulfide-based solid electrolyte having an argyrodite-type structure, wherein a composition of the sulfide-based solid electrolyte is represented by the formula:
Li8GeS5-xTe1+x
in which: −0.5≤x<0, 0
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
A metal leaching method includes contacting battery powder of lithium ion battery waste with an acidic leachate 21 inside a leaching container 1 and leaching a metal contained in the battery powder into the acidic leachate 21, wherein the leaching container 1 has a porous member 2 arranged at a position above the liquid surface 22 of the acidic leachate 21 stored inside the container so as to cover the liquid surface 22, and when the metal is leached inside the leaching container 1, gas bubbles Ba generated in the acidic leachate 21 are brought into contact with the porous member 2 and collapsed, the opening of the porous member 2 being 12 mm or less.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
The present invention provides a method for leaching out a metal contained in a battery powder of lithium ion battery waste into an acidic leaching liquid 21 by bringing the battery powder into contact with the acidic leaching liquid 21 within a leaching container 1. With respect to this method for leaching out a metal, the leaching container 1 has a movable member which is positioned and movable on the liquid level 22 of the acidic leaching liquid 21 retained within the leaching container 1; and when the metal is leached out within the leaching container 1, air bubbles Ba generated in the acidic leaching liquid 21 are broken by the action of the movable member.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
24.
MULTILAYER BODY HAVING FUNCTION OF TRANSPARENT CONDUCTIVE FILM
The present disclosure addresses the problem of providing a multilayer body which is capable of maintaining high transmittance, while preventing an increase in the resistivity due to annealing. The present disclosure provides a multilayer body which is obtained by stacking an IZO film and an oxide film, wherein: in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, the surface resistivity of the multilayer body is 200 Ω/sq. or less; and in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, the average transmittance of visible light (wavelength: 380-780 nm) is 85% or more. The present disclosure also provides a multilayer body which is obtained by stacking an IZO film and an oxide film, wherein: if Rs0 is the surface resistivity of the multilayer body in cases where the multilayer body is not subjected to annealing, and Rs1 is the surface resistivity of the multilayer body in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, Rs1/Rs0 ≤ 10.0 is satisfied; and in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, the average transmittance of visible light of the multilayer body is 85% or more.
H01B 5/14 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme comprenant des couches ou pellicules conductrices sur supports isolants
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
A highly pure electrodeposited copper comprising copper and unavoidable impurities, wherein the purity is at least 6N, the content of Ag included as an impurity is 0.2 ppm or less, the amount of included nonmetal inclusions with a particle size of 0.5-20 μm is 20,000/g or less, the average particle size in an electrodeposition cross section is in the range of 40-400 μm, the maximum particle size in the electrodeposition cross section is in the range of 300-2,700 μm, the average particle size in the electrodeposition surface is in the range of 25-150 μm, and the maximum particle size in the electrodeposition surface is in the range of 100-450 μm. As a result, the present invention provides a highly pure electrodeposited copper that has excellent crushability while suppressing the occurrence of lumps. (Selected drawing) FIG. 1B
The present invention provides a rolled copper foil for secondary batteries, the rolled copper foil having good heat resistance, thereby maintaining high strength even after a heat treatment. The present invention provides a rolled copper foil for secondary batteries, the rolled copper foil containing 0.05% by weight to 0.15% by weight of Zr and 0.05% by weight or less of oxygen, with the balance being made up of Cu and unavoidable impurities, while having a tensile strength in a direction parallel to the rolling direction of 500 MPa or more after a heat treatment at 350°C for 3 hours, and a change ratio of the tensile strength in the direction parallel to the rolling direction of 15% or less between before and after the heat treatment.
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
The present invention provides a metal resin composite electromagnetic shielding material which is obtained by stacking N-number of metal layers (N represents an integer of 1 or more) and M-number of resin layers (M represents an integer of 1 or more), with adhesive layers being interposed therebetween, wherein an adhesive layer that is closest to the outer surface of the metal resin composite electromagnetic shielding material has an air bubble proportion of 4.5% or less when the adhesive layer is observed from the resin layer side.
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
28.
METHOD FOR PRODUCING COBALT SOLUTION, METHOD FOR PRODUCING COBALT SALT, METHOD FOR PRODUCING NICKEL SOLUTION, AND METHOD FOR PRODUCING NICKEL SALT
A method for producing a cobalt solution which involves removing magnesium ions from a cobalt-containing solution which contains magnesium ions and is obtained by subjecting battery powder from lithion-ion battery waste to at least a leaching treatment, said method including a magnesium separation step which involves extracting cobalt ions from said cobalt-containing solution by using a solvent which contains a carboxylic acid-type extracting agent, separating magnesium ions, and thereafter, inverse-extracting the cobalt ions from the solvent and obtaining a cobalt solution as an inverse-extracted liquid.
C22B 3/38 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par extraction liquide-liquide utilisant des composés organiques contenant du phosphore
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p.ex. des rognures, pour produire des métaux non ferreux ou leurs composés
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
29.
SPUTTERING TARGET MEMBER, SPUTTERING TARGET ASSEMBLY, AND FILM FORMING METHOD
Provided is a sputtering target member which is for a magnetic recording layer and can suppress the generation of particles. This sputtering target member for a magnetic recording layer contains 10-70 mol% of Co, 5-30 mol% of Pt, 1.5-10 mol% of carbide, and 0-30 mol% in total of one or two more non-magnetic materials selected from among carbon, oxide, nitride, and carbonitride.
G11B 5/65 - Supports d'enregistrement caractérisés par l'emploi d'un matériau spécifié comportant uniquement le matériau magnétique, sans produit de liaison caractérisé par sa composition
30.
Fe-Pt-C-BASED SPUTTERING TARGET MEMBER, SPUTTERING TARGET ASSEMBLY, METHOD FOR FORMING FILM, AND METHOD FOR PRODUCING SPUTTERING TARGET MEMBER
Provided is a Fe-Pt-C-based sputtering target member which is prevented from the formation of particles during sputtering. The Fe-Pt-C-based sputtering target member has a magnetic phase containing Fe and Pt and a non-magnetic phase, the sputtering target member having a carbon-derived diffraction peak at a diffraction angle satisfying the formula: 25.6° ≤ 2θ ≤ 26.2° in an X-ray diffraction profile produced by the analysis of the sputtering target member by an X-ray diffraction method.
The present invention provides an IGZO sputtering target which has a high relative density, while suppressing particle increase and arcing during sputtering. The present invention provides an IGZO sputtering target which contains indium (In), gallium (Ga), zinc (Zn), zirconium (Zr) and oxygen (O), with the balance being made up of unavoidable impurities; and this IGZO sputtering target contains Zr in an amount of less than 20 ppm by mass, while having a relative density of 95% or more.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
32.
HEAT TREATMENT METHOD FOR BATTERY WASTE AND LITHIUM RECOVERY METHOD
A method for heat-treating battery waste containing lithium includes: allowing an atmospheric gas containing oxygen and at least one selected from the group consisting of nitrogen, carbon dioxide and water vapor to flow in a heat treatment furnace in which the battery waste is arranged, and heating the battery waste while adjusting an oxygen partial pressure in the furnace.
Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-αPtα)1-βGeβ, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (SGe30mass %/SGe) of 0.5 or less. The ratio (SGe30mass %/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass %) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.
The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.
Provided is a method for producing lithium hydroxide, which can obtain lithium hydroxide from lithium sulfate with a relatively low cost. A method for producing lithium hydroxide from lithium sulfate includes: a hydroxylation step of allowing the lithium sulfate to react with barium hydroxide in a liquid to provide a lithium hydroxide solution; a barium removal step of removing barium ions in the lithium hydroxide solution using a cation exchange resin and/or a chelate resin; and a crystallization step of precipitating lithium hydroxide in the lithium hydroxide solution that has undergone the barium removal step.
Provided are: a high-purity brookite-type crystalline titanium oxide powder; and a method for producing a brookite-type crystalline titanium oxide powder. The brookite-type crystalline titanium oxide powder has a sulfur atom content of 100 wtppm or less.
An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 μm or more to 130 μm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and wherein the indium phosphide substrate has a thickness of 330 μm or moreto 700 μm or less.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
C30B 33/10 - Gravure dans des solutions ou des bains fondus
Provided are a packaging container, a packaging method, and a method for carrying metal foil, which can suppress damage and deformation of the packaging container and enable stable carrying even if the packaging container is carried while suspending it in the midair. A packaging container made of corrugated cardboard includes: a pallet 2 having leg portions 21; a body frame 3 arranged on the pallet 2, the body frame 3 having bearing grooves 31 at end wall portions 32 opposing to each other; and a lid portion 4 provided on the body frame 3, wherein each of the leg portions 21 is arranged on an inner side than each of the end wall portions 23 of the pallet 2.
B65D 19/00 - Palettes ou plates-formes analogues, avec ou sans parois latérales, pour supporter les charges à soulever ou à déposer
B65D 19/20 - Palettes rigides avec parois latérales, p.ex. boîtes palettes avec corps formé par jonction ou union de plusieurs composants faites entièrement ou essentiellement en papier
B65D 19/36 - Palettes comportant un support de charge souple tendu entre des éléments de guidage, p.ex. des tubes-guides
B65D 19/44 - Eléments ou dispositifs pour placer les objets sur les plates-formes
B65D 5/44 - Parties insérées dans le réceptacle, qui en font partie intégrante ou qui lui sont fixées pour former des garnitures intérieures ou extérieures
B65D 5/50 - Parties insérées dans le réceptacle, qui en font partie intégrante ou qui lui sont fixées pour former des garnitures intérieures ou extérieures Éléments internes de support ou de protection du contenu
B65D 85/66 - Réceptacles, éléments d'emballage ou paquets spécialement adaptés à des objets ou à des matériaux particuliers pour rouleaux de revêtement de sol
B65D 85/672 - Réceptacles, éléments d'emballage ou paquets spécialement adaptés à des objets ou à des matériaux particuliers pour matériaux du genre bande ou ruban enroulés en spirale plate sur noyaux
40.
PURE COPPER OR COPPER ALLOY POWDER FOR DEPOSITION MODELING
The present invention addresses the problem of providing a pure copper or copper alloy powder which is used for deposition modeling by means of a laser beam system, and which is capable of decreasing the oxygen concentration in a model, while having an increased laser absorptance. The present invention provides a pure copper or copper alloy powder which is provided with an oxide coating, wherein: the oxide coating contains carbon; and the ratio of the oxygen concentration to the carbon concentration ((oxygen concentration)/(carbon concentration)) is 5 or less.
The smelting furnace according to the present invention is characterized by comprising: a first reaction zone into which a first charge containing a powder-form concentrate is charged, and in which the concentrate is oxidized by an oxygen-containing gas and allowed to fall downward in the form of liquid drops; and a second reaction zone having a holding container for holding molten metal obtained through the falling of the liquid drops, the second reaction zone being such that a raw material other than the concentrate is charged as a second charge into the molten metal and the second charge is caused to melt by the heat of oxidation of a matte in the molten metal or by a fuel combustion flame, and the second reaction zone being located at a position that is below the first reaction zone and on the upstream side relative to the first reaction zone with respect to the flow of the molten metal.
A metal-resin composite body 1 is provided with a metal plate 2, and a resin member 3 affixed to the metal plate 2, and has an internal space which is partitioned by means of a sealing member that includes the resin member 3, wherein: the resin member 3 has a frame-like shape extending on the metal plate 2 so as to enclose the perimeter of the internal space; there are weld lines 7 in one or two locations in the circumferential direction of the frame-shaped resin member 3; and, on a resin-covered surface in which the metal plate 2 is covered by the resin member 3, there is a rough undulating surface formed by means of rectangular recessed portions 5a and rectangular protruding portions 5b that are aligned alternately in each of one direction and a direction perpendicular thereto, in a plan view of the resin-covered surface.
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
43.
SPUTTERING TARGET AND METHOD FOR PRODUCING SPUTTERING TARGET
This sputtering target is formed from multiple structural members including a target and a substrate. The multiple structural members include a first structural member and a second structural member that are layered together. The first structural member contains Al and the second structural member contains Cu. At least one of the first structural member and the second structural member contains Mg. The sputtering target contains Al and Cu between the first structural member and the second structural member and has an alloy layer contacting the first structural member and the second structural member. At least a portion of the alloy layer further includes an Mg-containing layer in which Mg content is 5.0 at% or more.
A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb2O5 as a metal oxide component.
G11B 5/706 - Supports d'enregistrement caractérisés par l'emploi d'un matériau spécifié comportant une ou plusieurs couches de particules magnétisables mélangées de façon homogène avec un produit de liaison sur une couche de base caractérisés par la composition du matériau magnétique
G11B 5/851 - Revêtement d'un support avec une couche magnétique par pulvérisation cathodique
H01F 41/18 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats par pulvérisation cathodique
45.
MAGNETIC PARTICLE POWDER AND MAGNETIC PARTICLE DISPERSION
Provided is a magnetic particle powder containing a plurality of fine magnetic particles that can exhibit high magnetic force. This magnetic particle powder has a BET specific surface area of 10 m2/g to 50 m2/g, a median diameter (D50) of 0.5 μm to 10 μm, and saturation magnetization (Ms) of 50 emu/g or greater.
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
H01F 1/00 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques
B01J 20/02 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique
B01J 20/06 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des oxydes ou des hydroxydes des métaux non prévus dans le groupe
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
46.
SURFACE-TREATED COPPER FOIL, COPPER-CLAD LAMINATE AND PRINTED WIRING BOARD
The present invention provides a surface-treated copper foil which comprises a copper foil and a surface treatment layer that is formed on at least one surface of the copper foil. The surface treatment layer has an Sku of 2.50 to 4.50 and an Str of 0.20 to 0.40.
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
C25D 3/38 - Dépôt électrochimique; Bains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimique; Bains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
This surface-treated copper foil has a copper foil and a surface-treated layer formed on at least one surface of the copper foil. The surface-treated layer has an Spk change amount represented by formula (1) below of 0.02 to 0.24 µm. (1) Spk change amount = P2-P1 (in the formula, P1 is Spk calculated by applying a λs filter having a cutoff value λs of 2 µm, and P2 is Spk calculated without applying the λs filter).
The present invention provides a surface-treated copper foil which comprises a copper foil and a surface treatment layer that is formed on at least one surface of the copper foil. The surface treatment layer has a change ratio of Vmc of 23.00% to 40.00%, the change ratio of Vmc being represented by formula (1). (1): (Change ratio of Vmc) = (P2 – P1)/P2 × 100 In the formula, P1 is the value of Vmc as calculated, while applying a λs filter having a cut-off value λs of 2 µm; and P2 is the value of Vmc as calculated without applying the λs filter.
A surface-treated copper foil that has a copper foil and a surface-treatment layer formed on at least one surface of the copper foil. The amount of Vmp change, represented by formula (1), in the surface-treatment layer is 0.0010–0.0110 μm3/μm2. Amount of Vmp change = P2–P1 ... (1) In the formula: P1 is Vmp calculated after a λs filter is applied that has a cut off value λs of 2 μm; and P2 is Vmp calculated without the λs filter applied.
Provided is a surface-treated copper foil including a copper foil and a surface-treated layer formed on at least one surface of the copper foil. The surface-treated layer has an Sk rate of change, represented by formula (1) below, of 23.0-45.0%. Formula (1): Sk rate of change = (P2-P1)/P2×100 In the formula, P1 is Sk calculated by applying a λs filter having a cutoff value λs of 2 µm, and P2 is Sk calculated without applying the λs filter.
This surface-treated copper foil comprises a copper foil and a surface-treatment layer formed on at least one surface of the copper foil. The amount of change in Sk given by formula (1) for the surface-treatment layer is 0.180-0.600 µm. (1): Amount of change in Sk = P2 - P1 In the formula, P1 is the Sk calculated using a λs filter for which the cut off value λs is 2 µm, and P2 is the Sk calculated without using this λs filter.
This surface-treated copper foil has a copper foil and a surface-treated layer formed on at least one surface of the copper foil. The surface-treated layer has an Sku of 2.50-4.50 and an Str of 0.20-0.40.
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
C25D 3/38 - Dépôt électrochimique; Bains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimique; Bains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
A copper oxide-containing powder containing copper oxide (I) wherein, when the powder has been heated to 400°C, the powder contains thermal decomposition residue deriving from pitch in a mass ratio of 0.025-0.060 with respect to the copper oxide (I).
Copper powder comprising copper particles wherein the compacted bulk density is 1.30 g/cm3to 2.96 g/cm3, and the 50% particle size D50 at the time when the cumulative frequency of the copper particles becomes 50% in the volume-based particle size histogram, and the crystallite diameter D, determined using Scherrer's equation from the Cu (111) plane diffraction peak in an X-ray diffraction profile obtained by powder X-ray diffraction on the copper powder, satisfies D/D50≥0.060.
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p.ex. de solutions
The present invention addresses the problem of providing a sputtering target suitable for the formation of a semiconductor film having a low carrier concentration and a high mobility. Provided is a sputtering target containing zinc (Zn), tin (Sn), gallium (Ga) and oxygen (O), in which Ga is contained in an amount of 0.15 to 0.50 inclusive in terms of a Ga/(Zn+Sn+Ga) atomic ratio, Sn is contained in an amount of 0.30 to 0.60 inclusive in terms of an Sn/(Zn+Sn) atomic ratio, and the volume resistivity of the sputtering target is 50 Ω·cm or less.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
C04B 35/453 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
56.
LAYERED BODY HAVING FUNCTION AS TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR PRODUCING SAME, AND OXIDE SPUTTERING TARGET FOR SAID LAYERED BODY PRODUCTION
The present invention addresses the problem of providing a layered body having a higher transmittance and a lower resistivity (high conductivity) than conventional ITO films. Provided is a layered body that is obtained by layering an ITO film and an oxide film, the layered body having a surface resistance of 40 Ω/sq. s or less, and a visible light average transmittance of at least 90%, where the ratio between the ITO film thickness and the oxide film thickness (ITO film thickness/oxide film thickness) is less than 15. Also provided is a layered body that is obtained by layering an ITO film and an oxide film, wherein the layered body is characterized by satisfying R2/R1≤1.0 when R1 is the surface resistance of the layered body that has been subjected to atmosphere annealing at 220°C, and R2 is the surface resistance of the layered body that has been subjected to atmosphere annealing at 550°C.
H01B 5/14 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme comprenant des couches ou pellicules conductrices sur supports isolants
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
57.
Mg2Si SINGLE CRYSTAL, Mg2Si SINGLE CRYSTAL SUBSTRATE, INFRARED LIGHT RECEIVING ELEMENT AND METHOD FOR PRODUCING Mg2Si SINGLE CRYSTAL
Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.
C30B 11/02 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p.ex. méthode de Bridgman-Stockbarger sans solvants
H01L 31/032 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés non couverts par les groupes
58.
ELECTRICAL AND ELECTRONIC COMPONENT SCRAP PROCESSING METHOD, AND ELECTRICAL AND ELECTRONIC COMPONENT SCRAP PROCESSING DEVICE
The present invention provides an electrical and electronic component scrap processing method and an electrical and electronic component scrap processing device which are able to more efficiently select a desired component scrap from among electrical and electronic component scraps by using image recognition processing technology and a selection device. The electrical and electronic component scrap processing method comprises a selection conditions decision step S10 for deciding selection conditions for electrical and electronic component scraps 1, the selection conditions decision step S10 comprising: an image recognition processing step S12 in which component scraps belonging to a specific category of components are identified, using image recognition processing, from among a plurality of captured images capturing the electrical and electronic component scraps 1 which include a plurality of component scraps, and image recognition information including information on detection area, quantity, and scores indicating certainty of the identified component scraps are acquired; a classification step S13 in which the image recognition information of the captured images is used to create classification information of the identified component scraps; and a conditions decision step S14 in which a score threshold for image recognition processing and a detection area threshold for component scraps are decided on the basis of the classification information and processing capability information of a selection device 13 that selects component scraps.
B07C 5/34 - Tri en fonction d'autres propriétés particulières
G01N 21/27 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
59.
MALE PIN FOR CONNECTOR AND MANUFACTURING METHOD OF MALE PIN FOR CONNECTOR
Provided are a male pin for a connector which achieves low insertion force (friction force) when inserted into a female pin and good contact resistance with the female pin, and a manufacturing method of the male pin for the connector. This male pin for the connector is manufactured by plating a base material formed from copper or a copper alloy, said male pin comprising an inclined portion to be inserted into the female pin and a flat portion continuous to the inclined portion, wherein: a first region extending from the inclined portion and including the boundary between the inclined portion and the flat portion and a second region, which comes into electrical contact with the female pin when fitted into the female pin, are plated with dissimilar coatings; the first region has greater hardness than the hardness of the second region; the second region has less contact resistance than the contact resistance of the first region; and at least the first region is coated with oil.
C25D 5/12 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome
C25D 5/50 - Post-traitement des surfaces revêtues de métaux par voie électrolytique par traitement thermique
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
H01R 43/16 - Appareils ou procédés spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation de connecteurs de lignes ou de collecteurs de courant ou pour relier les conducteurs électriques pour la fabrication des pièces de contact, p.ex. par découpage et pliage
H01R 13/03 - Contacts caractérisés par le matériau, p.ex. matériaux de plaquage ou de revêtement
60.
Sputtering Target And Method For Manufacturing The Same
A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.
A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.
Amount of microcracks=frequency of microcracks×average depth of microcracks
This method for treating battery waste includes: a first heat treatment step of heating the battery waste under an atmosphere including at least one selected from the group comprising nitrogen, carbon dioxide, and steam; and, after the first heat treatment step, a second heat treatment step of switching from the atmosphere in the first heat treatment step and heating the battery waste under an atmosphere that is different from said atmosphere and that includes a larger amount of oxygen than in the first heat treatment step.
Provided is a laminate that enhances an electromagnetic wave shielding effect in a low-frequency region. The present invention provides a laminate including at least one non-magnetic metal layer and at least one magnetic metal layer, at least one magnetic metal layer including an amorphous phase.
A method for treating battery waste includes: a first heat treatment step of heating the battery waste in an atmosphere containing at least one selected from the group consisting of nitrogen, carbon dioxide and water vapor; and after the first heat treatment step, a second heat treatment step of changing the atmosphere in the first heat treatment step and heating the battery waste in an atmosphere which is different from the atmosphere in the first heat treatment step and which contains a larger amount of oxygen than that in the first heat treatment step.
H01M 6/52 - Récupération des parties utiles des éléments ou batteries usagés
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
64.
POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, ALL-SOLID-STATE LITHIUM ION BATTERY, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES
abcdee (wherein 1.0 ≤ a ≤ 1.05, 0.8 ≤ b ≤ 0.9, 1.8 ≤ e ≤ 2.2 and (b + c + d) = 1); the coating layer is an oxide of Li and Nb; and the specific surface area X (m2/g) of the positive electrode active material and the Nb content Y (mass%) in the positive electrode active material satisfy the relational expression (2) described below. (2): 0.65 ≤ Y/X ≤ 1.20
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p.ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
A method for processing ores containing gold or refining intermediates containing gold, the refining intermediate being obtained by subjecting the ores to a refining process, wherein the method includes: a leaching step of leaching gold from the ores or the refining intermediates using a sulfate solution containing iodide ions and iron (III) ions as a leaching solution; an adsorption step of adsorbing iodine and gold in the leached solution obtained in the leaching step on activated carbon; and an iodine separation step of separating iodine from the activated carbon while leaving gold on the activated carbon that has undergone the adsorption step.
C22B 3/24 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés physiques, p.ex. par filtration, par des moyens magnétiques par adsorption sur des substances solides, p.ex. par extraction avec des résines solides
B01J 20/20 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant du carbone obtenu par des procédés de carbonisation
The present invention provides: a plated material which has low insertion force (frictional force) and good durability at high humidities; and an electronic component. A plated material which is provided with: a base plating layer that is provided on the surface of a base material, while being composed of Ni or an Ni alloy; and a surface layer that is provided on the base plating layer, while being composed of an Sn-In-Cu alloy.
Provided are an indium phosphide substrate in which the development of concave defects is suppressed, a semiconductor epitaxial wafer, a method for producing an indium phosphide single crystal ingot, and a method for producing an indium phosphide substrate. The present invention is an indium phosphide substrate having zero concave defects detected by topography channel on the surface when the diameter is 100 mm or less and at least one surface is irradiated with laser light having a wavelength of 405 nm by S polarization and inspected.
A surface-treated copper foil comprising a copper foil and a surface-treating layer formed on at least one surface of the copper foil. The surface-treating layer has an Sku of 2.50-4.50 and an Str of 0.20-0.40.
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
C25D 3/38 - Dépôt électrochimique; Bains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimique; Bains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
A surface-treated copper foil which comprises: a copper foil; and a surface treatment layer that is formed on at least one surface of the copper foil. The surface treatment layer has an Sku of from 2.50 to 4.50 and an Str of from 0.20 to 0.40.
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
C25D 3/38 - Dépôt électrochimique; Bains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimique; Bains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
Provided are an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer that make it possible to suppress cracking in an indium phosphide substrate caused by irregularities and processing damage in an edge part. The surface roughness of the entire edge-part surface of the indium phosphide substrate has a maximum height Sz of 2.1 μm or less, as measured by a laser microscope.
Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤110° for all of the planes A where a distance from the main surface is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, and wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of from 200 to 350 μm.
Provided is a method for processing electronic and electrical device component scrap according to an embodiment of the present invention includes a smelting raw material sorting step of sorting a processing raw material containing valuable metals processable in a smelting step from the electronic and electrical device component scrap, wherein the method comprises removing lump copper wire scrap contained in the electronic and electrical device component scrap using a parallel link robot.
Provided are an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer, which enable control of contamination that occurs on the surface of an indium phosphide substrate due to residue at an edge section thereof. The indium phosphide substrate is configured such that an edge section of the substrate has a surface roughness of 0.15 μm or less in a root-mean-square height Sq on the entire surface of the edge section, measured by a laser microscope.
The purpose of the present invention is to provide a surface-treated copper foil (1) with which it is possible to reduce peeling from a substrate and to form a fine-pitched circuit pattern. This surface-treated copper foil (1) has a copper coil (2), a first surface treatment layer (3) formed on one surface of the copper coil (2), and a second surface treatment layer (4) formed on the other surface of the copper coil (2). The ratio of the amount of Ni adhering to the first surface treatment layer (3) relative to the amount of Ni adhering to the second surface treatment layer (4) is 0.01-2.0. The surface-treated copper foil (1) has a tensile strength of 235-290 MPa. The copper coil (2) is made of at least 99.0 mass% of Cu, the balance being unavoidable impurities.
Provided is a method for processing lithium ion battery waste, which can effectively precipitate aluminum ions and iron ions in the solution by neutralization and relatively easily separate the precipitate. The method for processing lithium ion battery waste includes: a leaching step of leaching battery powder in an acid, the battery powder containing at least aluminum and iron and being obtained from lithium ion battery waste, and removing a leached residue by solid-liquid separation to obtain a leached solution containing at least aluminum ions and iron ions; and a neutralization step of adding phosphoric acid and/or a phosphate salt and an oxidizing agent to the leached solution, increasing a pH of the leached solution to a range of 2.0 to 3.5, precipitating the aluminum ions and the iron ions in the leached solution as aluminum phosphate and iron phosphate, respectively, and removing a neutralized residue by solid-liquid separation to obtain a neutralized solution.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/16 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions organiques
C22B 3/44 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés chimiques
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p.ex. des rognures, pour produire des métaux non ferreux ou leurs composés
Provided is an indium phosphide substrate having good accuracy of flatness of the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a difference between maximum and minimum values of a maximum height Pz in each of four cross-sectional curves is less than or equal to 1.50/10000 of a length in a longitudinal direction of an orientation flat end face, wherein the four cross-sectional curves are set at intervals of one-fifth of a thickness of the substrate on a surface excluding a width portion of 3 mm inward from both ends of the orientation flat end face in the longitudinal direction of the orientation flat end face, and the maximum height Pz in each of the four cross-sectional curves is measured in accordance with JIS B 0601:2013.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
The present invention provides a method for processing lithium ion battery waste, said method being capable of effectively precipitating aluminum ions and iron ions in a liquid by means of neutralization and being capable of relatively easily separating the precipitate. A method for processing lithium ion battery waste, said method comprising: a leaching step wherein a battery powder, which is obtained from lithium ion battery waste and contains at least aluminum and iron, is subjected to leaching with use of an acid, and the leaching residue is removed by means of solid-liquid separation, thereby obtaining a leachate that contains at least aluminum ions and iron ions; and a neutralization step wherein a phosphoric acid and/or a phosphate as well as an oxidant are added to the leachate so as to increase the pH thereof to a value within the range of from 2.0 to 3.5, thereby having the aluminum ions and the iron ions in the leachate respectively precipitate as aluminum phosphate and iron phosphate, and a post-neutralization solution is subsequently obtained by removing the neutralization residue by means of solid-liquid separation.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/16 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions organiques
C22B 3/44 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés chimiques
78.
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHIDE SUBSTRATE
Provided is an indium phosphide substrate having good linearity accuracy of a ridge line where the main surface is in contact with the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a maximum value of deviation is less than 1/1000 of a length of a ridge line where the main surface is in contact with the orientation flat, when a plurality of measurement points are set at intervals of 2 mm from a start point to an end point at the ridge line, except for a length portion of 3 mm inward from both ends of the ridge line, and based on a reference line which is a straight line connecting the start point and the end point, a distance of each measurement point from the reference line is defined as the deviation of each measurement point.
C30B 33/10 - Gravure dans des solutions ou des bains fondus
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p.ex. des matériaux pour semi-conducteurs; Appareillages ou dispositifs à cet effet
Provided is a sputtering target capable of reducing generation of particles, and a method for producing the same. The sputtering target includes: 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and at least B6O as an oxide component.
C22C 5/04 - Alliages à base d'un métal du groupe du platine
C22C 19/07 - Alliages à base de nickel ou de cobalt, seuls ou ensemble à base de cobalt
C22C 30/00 - Alliages contenant moins de 50% en poids de chaque constituant
C22C 32/00 - Alliages non ferreux contenant entre 5 et 50% en poids d'oxydes, de carbures, de borures, de nitrures, de siliciures ou d'autres composés métalliques, p.ex. oxynitrures, sulfures, qu'ils soient soient ajoutés comme tels ou formés in situ
81.
SORTING MACHINE AND METHOD FOR TREATING ELECTRONIC/ELECTRIC DEVICE COMPONENT SCRAPS
Provided is a sorting machine capable of more easily and efficiently sorting specific parts having a specific shape from raw materials containing various substances having different shapes, and a method for treating electronic and electric device component scraps using the sorting machine. The sorting machine includes a conveying device 1 having a conveying surface 13 which conveys raw materials containing substances having different shapes from a raw material inlet 11 to a receiving port 12; and a gate device 2 provided with a cylindrical roll portion 21 having a rotating function arranged at a certain distance d on the conveying surface to allow at least a part of the raw materials 100 to pass through to the receiving port 12.
B03C 1/23 - Séparation magnétique agissant directement sur la substance à séparer le matériau étant déplacé sous l'effet de champs mobiles, p.ex. générés par des bobines magnétiques stationnaires; Séparateurs à champ de Foucault, p.ex. à rampe glissante
B03C 1/18 - Séparation magnétique agissant directement sur la substance à séparer ayant des supports pour le matériau traité en forme de bandes avec des aimants se déplaçant pendant l'opération
82.
METHOD FOR PROCESSING ELECTRONIC/ELECTRICAL DEVICE COMPONENT SCRAPS
Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes removing powdery objects contained in electronic and electrical device component scrap prior to a step of separating non-metal objects or metal objects from the electronic and electrical device component scrap containing the metal objects and the non-metal objects, using a metal sorter including: a metal sensor, a color camera, an air valve, and a conveyor.
Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes sorting electronic and electrical device component scrap by wind powder sorting to remove plate-shaped materials containing valuable metals included in the electronic and electrical device component scrap, and then sorting the resulting sorted objects by magnetic sorting.
B07B 4/02 - Séparation des solides, obtenue en soumettant leur mélange à des courants de gaz pendant que le mélange tombe
B07B 9/00 - Combinaisons d'appareils à cribler ou tamiser ou à séparer des solides par utilisation de courants de gaz; Disposition générale des installations, p.ex. schéma opératoire
B02C 23/20 - Addition de fluide, dans un but autre que celui de broyer ou de désagréger par l'énergie du fluide après broyage ou désagrégation
B03C 1/24 - Séparation magnétique agissant directement sur la substance à séparer le matériau étant déplacé sous l'effet de champs mobiles, p.ex. générés par des bobines magnétiques stationnaires; Séparateurs à champ de Foucault, p.ex. à rampe glissante le matériau étant déplacé sous l'effet de champs mobiles
Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:
the {111} area ratio=total area of crystal grains having a {111} plane oriented in the normal direction in the measured regions/total area of the measured regions Equation (1);
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:
the {111} area ratio=total area of crystal grains having a {111} plane oriented in the normal direction in the measured regions/total area of the measured regions Equation (1);
the rate of change=[maximum value−minimum value]/minimum value Equation (2).
Provided are: an electronic component scrap sorting method with which it is possible to appropriately determine a scrap mixture including multiple types of components; and an electronic component scrap processing method. This electronic component scrap sorting method comprises: a location/shape identification step for identifying the location and shape of each electronic component scrap from among multiple pieces of electronic component scraps having different shapes so as to obtain location/shape identification information that contains location information and shape information of the respective electronic component scraps; a feature analysis step for analyzing at least two features from each of the electronic component scraps so as to obtain feature analysis information; and a sorting step for, on the basis of the location/shape identification information and the feature analysis information, sorting the respective electronic component scraps by predetermined component types by using at least two features associated with one certain type of electronic component scraps that have the same shape and are at the same location.
A method for recovering at least cobalt of valuable metals, cobalt and nickel, from an acidic solution obtained by subjecting waste containing positive electrode materials for lithium ion secondary batteries to a wet process, the acidic solution comprising cobalt ions, nickel ions and impurities, the method including: a first extraction step for Co recovery, the first extraction step being for extracting cobalt ions by solvent extraction from the acidic solution and stripping the cobalt ions; and a second extraction step for Co recovery, the second extraction step being for extracting cobalt ions by solvent extraction from a stripped solution obtained in the first extraction step for Co recovery and stripping the cobalt ions, wherein the first extraction step for Co recovery includes: a solvent extraction process for extracting cobalt ions in the acidic solution into a solvent; a scrubbing process for scrubbing the solvent that has extracted the cobalt ions; and a stripping process for stripping the cobalt ions in the solvent after the scrubbing into a solution.
C30B 29/10 - Composés inorganiques ou compositions inorganiques
C30B 11/08 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p.ex. méthode de Bridgman-Stockbarger en introduisant dans le bain fondu le matériau à cristalliser ou les réactifs le formant in situ tous les constituants du cristal étant ajoutés pendant la cristallisation
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
89.
SULFIDE-BASED SOLID ELECTROLYTE AND ALL-SOLID-STATE LITHIUM ION BATTERY
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
H01B 1/10 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques sulfures
A method for recovering at least cobalt of valuable metals, cobalt and nickel, from an acidic solution obtained by subjecting waste containing positive electrode materials for lithium ion secondary batteries to a wet process, the acidic solution comprising cobalt ions, nickel ions and impurities, wherein the method includes: a first extraction step for Co recovery, the first extraction step being for extracting cobalt ions by solvent extraction from the acidic solution and stripping the cobalt ions; an electrolytic step for Co recovery, the electrolytic step being for providing electrolytic cobalt by electrolysis using a stripped solution obtained in the first extraction step for Co recovery as an electrolytic solution; a dissolution step for Co recovery, the dissolution step being for dissolving the electrolytic cobalt in an acid; and a second extraction step for Co recovery, the second extraction step being for extracting cobalt ions by solvent extraction from a cobalt dissolved solution obtained in the dissolution step for Co recovery and stripping the cobalt ions.
C22B 3/00 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés
C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p.ex. des rognures, pour produire des métaux non ferreux ou leurs composés
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
C25C 1/08 - Production, récupération ou affinage électrolytique des métaux par électrolyse de solutions des métaux du groupe du fer, de métaux réfractaires ou du manganèse du nickel ou du cobalt
91.
COPPER POWDER, AND METHOD FOR MANUFACTURING COPPER POWDER
A copper powder containing copper particles, such that, in a solution that has a copper ion concentration of 10 g/L and that is obtained by the copper particles of the copper powder being dissolved by nitric acid, the number of particles having a grain diameter of 1.5 μm or greater as measured using a liquid particle counter is 10000 or less per 10 mL.
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensions; Appareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p.ex. de solutions
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
H01B 5/00 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
B22F 1/00 - Poudres métalliques; Traitement des poudres métalliques, p.ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
The present invention provides: a plated material which has low insertion force (low friction) and durability at high temperatures; and an electronic component. A plated material which is provided with: a base plating layer that is composed of Ni or an Ni alloy, and is provided on the surface of a base material; an intermediate layer that is composed of an In-Ni-Sn alloy, and is provided on the base plating layer; and a surface layer that is composed of an In-Sn alloy, and is provided on the intermediate layer.
There is provided a more versatile technique that is useful for enhancing the sintering delay property of a metal powder. A metal powder surface-treated with at least one coupling agent comprising Si, Ti, Al or Zr, wherein a total adhesion amount of Si, Ti, Al and Zr is 200 to 10,000 μg with respect to 1 g of the surface-treated metal powder, wherein a 1% by mass aqueous solution of the coupling agent indicates a pH of 7 or less, and wherein a sintering starting temperature is 500° C. or higher.
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
B22F 1/145 - Traitement chimique, p.ex. passivation ou décarburation
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
H01B 5/14 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme comprenant des couches ou pellicules conductrices sur supports isolants
B22F 1/103 - Poudres métalliques contenant des agents lubrifiants ou liants; Poudres métalliques contenant des matières organiques contenant un liant organique comprenant un mélange de, ou obtenu par réaction de, plusieurs composants autres que les solvants ou les agents lubrifiants
The present invention involves an arsenic flotation step of subjecting, to flotation, slurry in which mineral ores including a copper mineral substance and an arsenic mineral substance are mixed without adding a collector or with a collector added thereto in an amount of 10 g or less per 1 ton of the mineral ores to obtain: a floating ore including the arsenic mineral substance; and a tailing ore including the copper mineral substance.
Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material includes one or more metal elements, and has a crystal grain size of 10 μm or less.
A method for processing positive electrode active material waste of lithium ion secondary batteries, the waste containing cobalt, nickel, manganese and lithium, the method including: a carbon mixing step of mixing the positive electrode active material waste in the form of powder with carbon to obtain a mixture having a ratio of a mass of carbon to a total mass of the positive electrode active material waste and the carbon of from 10% to 30%; a roasting step of roasting the mixture at a temperature of from 600° C. to 800° C. to obtain roasted powder; a dissolution step including a first dissolution process of dissolving lithium in the roasted powder in water or a lithium-containing solution, and a second dissolution process of dissolving the lithium in a residue obtained in the first dissolution process in water; and an acid leaching step of leaching a residue obtained in the lithium dissolution step with an acid.
Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 μm or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.
B21J 1/02 - Traitement préliminaire des matériaux métalliques sans mise en forme particulière, p.ex. conservation des propriétés physiques de certaines zones, forgeage ou pressage des pièces à l'état brut
B21J 5/00 - Méthodes pour forger, marteler ou presser; Equipement ou accessoires particuliers
99.
TITANIUM COPPER FOIL, EXTENDED COPPER ARTICLE, ELECTRONIC DEVICE COMPONENT, AND AUTO-FOCUS CAMERA MODULE
Provided is a titanium copper foil which has required high strength when used as a spring, and has improved etching uniformity, and which can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules. The titanium copper foil contains from 1.5 to 5.0% by mass of Ti and from 10 to 3000 pm by mass of Fe, the balance being Cu and inevitable impurities, wherein the titanium copper foil has crystal orientation having A of from 10 to 40, in which A is represented by the following equation (1) when measuring a rolled surface by an X-ray diffraction method:
Provided is a titanium copper foil which has required high strength when used as a spring, and has improved etching uniformity, and which can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules. The titanium copper foil contains from 1.5 to 5.0% by mass of Ti and from 10 to 3000 pm by mass of Fe, the balance being Cu and inevitable impurities, wherein the titanium copper foil has crystal orientation having A of from 10 to 40, in which A is represented by the following equation (1) when measuring a rolled surface by an X-ray diffraction method:
A=β{220}/(β{200}+β{311}) Equation (1)
Provided is a titanium copper foil which has required high strength when used as a spring, and has improved etching uniformity, and which can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules. The titanium copper foil contains from 1.5 to 5.0% by mass of Ti and from 10 to 3000 pm by mass of Fe, the balance being Cu and inevitable impurities, wherein the titanium copper foil has crystal orientation having A of from 10 to 40, in which A is represented by the following equation (1) when measuring a rolled surface by an X-ray diffraction method:
A=β{220}/(β{200}+β{311}) Equation (1)
in which the β{220}, the β{200}, and the β{311} represent half-value widths of X-ray diffraction peaks at a {220} crystal plane, a {200} crystal plane, and a {311} crystal plane, respectively.
C22F 1/08 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du cuivre ou de ses alliages
G02B 7/09 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles avec mécanisme de mise au point ou pour faire varier le grossissement adaptés pour la mise au point automatique ou pour faire varier le grossissement de façon automatique
G03B 13/36 - Systèmes de mise au point automatique
100.
APPARATUS FOR ANALYZING COMPOSITION OF ELECTRONIC AND ELECTRICAL DEVICE PART SCRAPS, DEVICE FOR PROCESSING ELECTRONIC AND ELECTRICAL DEVICE PART SCRAPS, AND METHOD FOR PROCESSING ELECTRONIC AND ELECTRICAL DEVICE PART SCRAPS
Provided is an apparatus for analyzing composition of electronic and electrical device part scraps which can determine a composition of part scraps in the electronic and electrical device part scraps in a short time, a device for processing electronic and electrical device part scraps, and a method for processing electronic and electrical device part scraps using those devices. An apparatus for analyzing a composition of electronic and electrical device part scraps including a classification data storage means for storing a classification data for extracting images of a plurality of component types of electronic and electrical device part scraps from a captured image of electronic and electrical device part scraps composed of the plurality of component types and classifying extracted images into each of the plurality of component types, a classification means for classifying the extracted images into each of the plurality of component types extracted from the captured image of the electronic and electrical device part scraps according to the classification data, and analysis means for analyzing at least one of an area, a number, an average particle size, and weight ratio of each of the plurality of component types classified by the classification means.
