An optical isolator includes a polarizer for receiving and passing an optical signal received from an optical signal source to a garnet which rotates a polarization of the optical signal by an angle of 45°−θ1°, where 5°≤θ1°<42°, and outputs at least a part of this polarization rotated optical signal to an analyzer, having a polarization optical axis at 45°+θ2°, where 5°≤θ2°<42°. The analyzer outputs at least a part of the polarization rotated optical signal to an external optical circuit which reflects at least a part of the polarization rotated optical signal back to the garnet via the analyzer. The garnet rotates a polarization of the reflected optical signal by an angle of 45°−θ1° and outputs this latter polarization rotated optical signal to the polarizer which at least partially blocks it from the optical signal source.
In one example, an optoelectronic module may include a stack assembly including an electrical integrated circuit and an optical integrated circuit electrically and mechanically coupled to one another, an interposer electrically and mechanically coupled to the stack assembly, and an optical connector to optically couple the optical integrated circuit with an array of optical fibers.
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
4.
COMPUTER-CONTROLLED PROCESSING USING NEURAL NETWORK-BASED SELECTION OF OPTIMUM PROCESS ALGORITHM
A methodology is presented for using neural network (NN) techniques to evaluate input data presented to a computer-controlled processing system. An initial evaluation is used to determine if the input data represents a valid product that is intended to be processed by one or more algorithms within the computer system. If the input data is determined to be invalid, the operation of the algorithm on the product is not initiated (or halted if previously started). Presuming a valid input is ascertained by the NN-based evaluation system, further classification and identifications may be performed to properly match the presented data with a particular system process, as well as select an optimum algorithm for preforming a given task from a set of possible algorithms that may be used for that task.
A system for providing advanced characterization of an optical fiber span is based upon the use of a pair of optical time domain reflectometers (OTDRs), located at opposing end terminations of the span being characterized. Each OTDR performs standard reflectometry measurements and transmits the resulting OTDR trace to monitoring equipment in a typical manner. The pair of OTDR traces is thereafter combined in a particular manner (“stitched together”) to create an OTDR trace of the entire fiber span (essentially doubling the operational range of prior art OTDR measurement capabilities). The transmit portion of one OTDR may be paired with the receive portion of the other OTDR, with time-of-light measurements (or signal loss measurements) used to determine optical path length and/or optical signal loss of the span. Using a multi-wavelength light source in the paired transmit/receive arrangement allows for a characterization of chromatic dispersion of the span.
G01M 11/00 - Test des appareils optiques; Test des structures ou des ouvrages par des méthodes optiques, non prévu ailleurs
H04B 10/071 - Dispositions pour la surveillance ou le test de systèmes de transmission; Dispositions pour la mesure des défauts de systèmes de transmission utilisant un signal réfléchi, p.ex. utilisant des réflectomètres optiques temporels [OTDR]
A modular assembly for opto-electronic systems has a substrate on which various photonic integrated circuit (PIC) chips and electronic integrated circuit (EIC) chips are mounted. One or more waveguide (WG) chips mounted on the substrate align the optical communication between the PIC chips and fiber blocks for optical fibers. Preconfigured electrical connections in the substrate allow the PIC and EIC chips to communicate with one another and to communicate with solder bumps on the substrate for integration of the modular assembly with other electronic components.
A double-sided coating may include a substrate having a first side and an opposing second side, a first coating forming a first electrode arranged on the first side, and a second coating forming a second electrode arranged on the second side. Each of the first coating and the second coating have a thickness of at least 30 μm and a surface roughness (Ra) of less than 10 μm and are formed from a slurry including a liquid carrier suspending solid particles. The slurry includes a binder, an active material, and a conductive material.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c. à d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.
A grid is manufactured with a combination of ion implant and epitaxy growth. The grid structure is made in a SiC semiconductor material with the steps of a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer (n1), b) by epitaxial growth adding at least one doped semiconductor SiC material to form separated second regions (p2) on the first layer (n1), if necessary with aid of removing parts of the added semiconductor material to form separated second regions (p2) on the first layer (n1), and c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b); implanting ions in the first layer (n1) to form first regions (p1). It is possible to manufacture a grid with rounded corners as well as an upper part with a high doping level. It is possible to manufacture a component with efficient voltage blocking, high current conduction, low total resistance, high surge current capability, and fast switching.
A laser processing head conducts laser energy to process a workpiece. A fiber input emits the laser energy, and internal optics focus the laser energy as a laser beam to a focus spot relative to an output on the head. A relay between the fiber input and the internal optics directs a portion of process light, which has returned from the process through the internal optics to the relay. The effects of the internal optics form the returned process light as a hollow converging cone toward the fiber input. The relay is located in an angular space situated an extent outside the diverging cone of the emitted laser energy from the fiber input, such as at a numerical aperture that is about 10 percent greater than the numerical aperture of the fiber input. A sensor detects the portion of the process light directed to it.
An alloy product is produced by an aluminothermic reduction process and an alloying process with one or more other metals or master alloy, where the reduction process and the alloying process are performed in a single stage. The final alloy product may have a scandium concentration that is greater than 0% and less than about 2%. According to another aspect of the present disclosure, a first melt is produced at a first melt temperature, a melting and alloying step is performed at a second melt temperature, less than the first melt temperature, and the temperature of the first melt is not substantially less than the second melt temperature before the melting and alloying step.
C22C 1/02 - Fabrication des alliages non ferreux par fusion
C22C 1/057 - Fabrication de métaux durs à base de borures, de carbures, de nitrures, d'oxydes ou de siliciures; Préparation du mélange de poudres utilisé comme matière première à cet effet avec formation in situ de phases autres que des composés durs par frittage par réaction à l’état solide, p.ex. d'une phase métallique formée par une réaction de réduction
13.
METHODS AND DEVICES FOR LASER BEAM PARAMETERS SENSING AND CONTROL WITH FIBER-TIP INTEGRATED SYSTEMS
A sensing method for in-situ non-perturbing measurement of characteristics of laser beams at the exit of the laser beam delivery fiber tips include measuring power of a laser beam transmitted through delivery fiber tip in fiber-optics systems. A sensing devices for in-situ non-perturbing sensing and control of multiple characteristics of laser light transmitted through light delivery fiber tips includes a fiber-tip coupler comprised of a shell with enclosed delivery fiber having a specially designed angle-cleaved endcap and one or several tap fibers that are specially arranged and assembled at back side of the endcap and other variations. Methods and system architectures for in-situ non-perturbing control of characteristics of laser beams at the exit of the laser beam delivery fiber tips include fiber-tip couplers and sensing modules that receive laser light from tap fibers, and systems for optical processing to enhance light characteristics suitable for in-situ measurement.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation
The disclosure relates to a system and a method for monitoring the state of optical elements of a device for laser material processing. According to the present disclosure a detailed monitoring of the state of optical elements of a device for laser material processing takes place by monitoring properties of laser radiation in the direction of an optical fiber or laser radiation entering a laser processing head connected to the laser source and these measurements, which can be performed during the processing process. The device according to the present disclosure has optical sensors for measuring the intensity and respective current laser power.
A laser assembly, such as a flood illuminator, has laser (e.g., VCSEL) emitters on a substrate configured to emit optical signals. An optic structure of optically transparent material, such as a polymer, is formed directly on the substrate, and micro-optic elements are nano-imprinted on the optic structure. The micro-optic elements are arranged in optical communication with the optical signals emitted from the laser emitters to perform field mapping or other optical functions. The laser emitters are on the same surface of the substrate as the optic structure along with electrical contacts so forming the optic structure involves covering the electrical contacts with a protective layer, dispensing a polymer for the optic structure, cutting away portions of the optic structure, removing the remaining protective layer, and exposing the electrical contacts.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
16.
LITHIUM ION COMPLEXES AND THE USE IN ELECTROCHEMICAL DEVICES CONTAINING THE SAME
A new Li-complexing derivative electrolyte for use in an electrochemical device, method of manufacturing said electrolyte, and an electrochemical device is disclosed. The electrolyte includes a Li-ion complex associated with one or more coordinating ligands. The ratio of the Li-ion complex to coordinating ligands is less than and equal to 1.52, and the association of the Li ion complex and the one or more coordinating ligands has an apparent coordination number (ACN) of 3 to 5. An inactive solvent may also be incorporated.
A proposed fabrication technique for a polarization-absorbing wire grid polarizer avoids the need to etch through the multilayer stack of materials to form the grid structure. Initial reflective metal and dielectric buffer layers are patterned and etched in a conventional manner to create the desired grid topology. A small-angle coating process is then used to complete the fabrication process by first coating the top surface of the patterned dielectric with a polarization-absorbing metal. A second coating process is used to cover the created metal coating with a dielectric cladding material. Maintaining a small angle of incidence between the coating source and the wire grid structure ensures that top portions of the grid are suitably covered to create the desired multilayer wire configuration.
C03C 17/36 - Traitement de surface du verre, p.ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes un revêtement au moins étant un métal
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
18.
TEMPERATURE CONTROL FOR COILED GAIN FIBER IN FIBER AMPLIFIER
A temperature controller is used for a gain fiber of a fiber amplifier. The controller includes a heat transfer structure and one or more temperature sinks, such as cooling plates. The heat transfer structure supports the gain fiber and is disposed in thermal contact with it. Portions of the temperature sink(s) are disposed in different thermal conductivity with sections of the heat transfer structure. For example, the sinks may have different material properties and/or material thicknesses. Also, portions of the temperature sink(s) can have different cooling rates. The different thermal conductivities conduct the heat from parts of the gain fiber differently from one another. In the end, an onset of Stimulated Brillouin Scattering (SBS) on the laser light path can be mitigated by conducting heat from the gain fiber with the different thermal conductivities.
H01S 3/04 - Dispositions pour la gestion thermique
H01S 3/02 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure
Reinforced metal matrix composites are described including a porous ceramic reinforcement and a metal matrix in interstitial contact with the ceramic reinforcement. Methods of forming reinforced metal matrix composites are described including contacting a porous ceramic reinforcement with a liquid metal matrix and solidifying the liquid metal matrix.
A pluggable OTDR is disclosed that is utilizes a specific architecture that separates its passive optical elements from the remaining active optical and electrical elements. The set of active elements (i.e., laser, photodetector, and control/processing electronics) can arranged in a manner similar to a small form-factor pluggable (SFP) optical transceiver and assembled within a housing that meets these requirements. The passive optics may be incorporated into a separate optical fiber pigtailed component that is attached between the active OTDR module and a fiber span under test.
An embodiment includes a light source. The light source may include a substrate and a diffuser. The substrate may include a first surface and a second surface. The second surface may be opposite the first surface. The diffuser may be carried by the substrate. The diffuser may be configured to receive an optical signal from the substrate after the optical signal propagates through the substrate and to control a particular profile of a resultant beam of the optical signal over two axes after the optical signal propagates through the integrated diffuser.
G02B 27/09 - Mise en forme du faisceau, p.ex. changement de la section transversale, non prévue ailleurs
H01S 5/0236 - Fixation des puces laser sur des supports en utilisant un adhésif
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
23.
METHOD FOR PRE-CALCULATING AND APPLYING OPTIMIZED PHASE PATTERNS TO LCOS SWITCH PANEL OF WSS MODULE
Advanced hologram techniques pre-calculate holograms to be displayed on an LCoS switch panel of a wavelength selective switch (WSS) module. The holograms are generated offline and are then stored on the WSS module for later retrieval. Each of the holograms is associated with a defined parameter, such as an attenuation level, and each of the holograms is configured to create a reconfigurable phase grating profile or pattern of the pixels of the LCoS switch panel. Each phase pattern selectively directs desired diffraction orders of optical channels from the LCoS switch panel for output to selected ports and selectively directs undesired diffraction orders away from the ports and at a desired attenuation level. During operation, the WSS module can retrieve the stored holograms. Interpolation can determine intermediate holograms between parameter values, and a ramp function can be added to the pattern to account for steering adjustments.
A display includes a stack that includes, from top to bottom: a display layer including an array of spaced pixels and/or spaced subpixels and an array of spaced transmission spaces, wherein each transmission space is defined by a spacing between a subset of the spaced pixels and/or spaced subpixels; a micro-lens array (MLA) layer including an array of micro-lenses, wherein each micro-lens includes a curved surface in alignment with a corresponding one of the transmission spaces; and a laser light emitting (LLE) layer including an array laser diodes, wherein each laser diode is positioned in alignment with one micro-lens of the MLA layer and the corresponding one of the transmission spaces of the display layer and the curved surfaces of the micro-lenses face the LLE layer.
F21V 8/00 - Utilisation de guides de lumière, p.ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
G06V 10/145 - Caractéristiques optiques de l’appareil qui effectue l’acquisition ou des dispositifs d’éclairage Éclairage spécialement adapté à la reconnaissance de formes, p.ex. utilisant des réseaux
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
An integrated circuit has fuses that are selectively configurable by laser light having a wavelength incident on the fuses. A substrate of the integrated circuit has circuitry thereon. Fuses are disposed vertically above at least a portion of the circuitry. A dielectric reflector is disposed vertically above and laterally covers at least a portion of the circuitry. The dielectric reflector has a plurality of alternating dielectric layers of different refractive indices and is disposed adjacent to the fuses. The dielectric reflector is configured to reflect at least a portion of the laser light at the wavelength incident thereto.
H01L 23/525 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées avec des interconnexions modifiables
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
27.
Laser System with Harmonics - Generation in the Visible and UV Spectral Range
A laser system includes one or more harmonic generator blocks or elements including one or more crystals for converting a first wavelength (λ1) laser beam into second, third and/or fourth wavelength (λ2, λ3 and/or λ4) laser beams that may be output, with or without the first wavelength (λ1) laser beam, on different beam paths. One or more of the first, second, third and/or fourth wavelength laser beams may travel or traverse in a crystal in one or multiple directions.
An assembly is used with an amplifier that amplifies light using source light, pump light, and a doped fiber. The assembly has a plurality of ports, including a first port for input of the source light, a second port for input of the pump light, a third port for output to the doped fiber, a fourth port for input from the doped fiber, and a fifth port for amplified output. A birefringent device in optical communication with each of the ports is configured to refract o-light and e-light components of the light passing therethrough with different refractive indices. For the first and fourth ports, a first half-wave plate in optical communication through the birefringent device is configured to rotate polarization of the light passing therethrough with a first rotation. For the second port, a second half-wave plate in optical communication through the birefringent device is configured to rotate polarization of the light passing therethrough with a second rotation different from the first polarization. A lens is used to focus the light, and an optical filter in optical communication with the lens is configured to reflect the pump light back to the lens and being configured to pass the source light. A rotator in optical communication with the lens is configured to rotate polarization of the light passing therethrough with a third rotation. The third rotation is half of the first rotation, and the first rotation is half of the second rotation. Finally, a wedge reflector in optical communication with the rotator is configured to reflect the light incident thereto. The source light and the pump light are combined and communicated from the second port for output to the doped fiber. Meanwhile, amplified light from the doped fiber is received at the fourth port and is communicated to the amplified output. Reverse light from the amplified output can be isolated from reaching the doped fiber, and reverse source light from the doped fiber can be isolated from reaching the source port.
A variable radius mirror includes a mirror element having a deformable face with an outer surface incorporating a reflective element. The deformable face is deformable in response to a pressure applied by a pressure medium acting on an inner surface of the deformable face. A ring extends around a perimeter of the deformable face and protrudes from the inner surface of the deformable face. The mirror element further includes at least one of a plurality of steps recessed at different depths into the inner surface of the deformable face, a cooling cavity having a pair of manifolds between the outer surface and the inner surface of the deformable face, and a sidewall of the ring having a curved inner surface and a curved outer surface.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 26/06 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la phase de la lumière
A battery recycling method removes impurities to ensure production of battery-grade materials. The method includes removing cadmium (Cd) from a pregnant leach solution before recovering valuable battery metals such as nickel (Ni), manganese (Mn), cobalt (Co), and lithium (Li). The removal of the Cd may be performed by precipitating an insoluble organo-complex by adding an organic compound material to the pregnant leach solution. The organic compound material may include one or more of organosulfur, organothiophosphate, benzothiazole compounds or derivatives, such as dithiophosphinate, dithiophosphate, and mercaptobenzothiazole, respectively.
A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long-wavelength edge of a reflection peak of the etalon.
H01S 5/125 - Lasers à réflecteurs de Bragg répartis [lasers DBR]
H01S 5/0625 - Dispositions pour commander les paramètres de sortie du laser, p.ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes dans des lasers à plusieurs sections
A short-waveband active optical component based on a vertical emitting laser and a multi-mode optical fiber has an emitting end and a receiving end. In the emitting end, multiple VCSELs generate multiple optical signals of different wavelengths, and multiple photodiodes in the receiving end receive the optical signals emitted by the VCSELs. Both ends use a focusing lens array to collimate and focus the optical signals A Z-block-shaped prism performs a light combining function at the emitting end, while another Z-block-shaped prism performs a light splitting function at the receiving end. Both ends use a focusing lens for collimating and focusing the optical signals at ends of a multi-mode optical fiber, which is used for transmitting the optical signals generated by the VCSELs. The short-waveband active optical component has a small size and a high transmission rate.
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/43 - Dispositions comprenant une série d'éléments opto-électroniques et d'interconnexions optiques associées
H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
H04B 10/66 - Récepteurs non cohérents, p.ex. à détection directe
H04J 14/02 - Systèmes multiplex à division de longueur d'onde
H04B 10/25 - Dispositions spécifiques à la transmission par fibres
34.
MEMS OPTICAL SWITCH HAVING LOW INSERTION SWITCH LOSS
An optical switch includes an array of optical fibers to conduct optical signals. A biconvex lens has a front convex surface facing the fibers' tips and has a back convex surface facing a microelectromechanical (MEMS) mirror. The MEMS mirror can be selectively oriented to reflect the optical signals incident to the MEMS mirror so the optical signal input from one fiber can be selectively routed to another of the fibers.
G02B 6/35 - Moyens de couplage optique comportant des moyens de commutation
G02B 6/32 - Moyens de couplage optique ayant des moyens de focalisation par lentilles
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p.ex. systèmes micro-électromécaniques (SMEM, MEMS)
35.
METHODS FOR ABERRATION CORRECTION IN HIGH NUMERICAL APERTURE OPTICAL SYSTEMS
Described herein is a wavelength dispersive optical system (10). The system (10) comprises at least one optical input (12, 14, 16) for projecting an input optical beam comprising a plurality of individual wavelength components and at least one optical output (18) for receiving one or more output optical beams. The system (10) also includes a diffractive optical element (DOE) (1) including a substrate (2) and an array of physical diffraction elements (3). The diffraction elements (3) have a predefined spacing and/or curvature across a length of the DOE (1) and are collectively adapted to: i) spatially separate the individual wavelength components within the input optical beam to be formed into the one or more output optical beams; ii) impose predefined phase changes to the wavelength components to at least partially correct for optical aberrations to the input optical beam; and iii) impose predefined phase changes to the wavelength components to apply a wavelength dependent optical focusing to at least some of the wavelength components. The system (10) further includes an optical focusing element (5) having optical focusing properties complementary to the DOE (1) to modify the wavelength-dependent optical focusing of the wavelength components by the DOE (1).
A VC SEL can include: a substrate that passes light therethrough; a phase matching layer over a top mirror stack; a first metal layer over the phase matching layer; and an end metal region over the first metal layer. The phase matching layer and first metal layer have a cooperative thickness to provide reflectivity of at least a predetermined reflectivity threshold for the emission wavelength. A method of making a VCSEL can include: providing a substrate; forming a first mirror stack above the substrate; forming an active region above the first mirror stack; and forming a reflective end above the active region, the reflective end having a phase matching layer and a first metal layer. The phase matching layer and first metal layer have a combined thickness for the reflective end to have a reflectivity of at least a predetermined reflectivity threshold for an emission wavelength of the VCSEL.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
A laser may include a lower semiconductor structure and an upper semiconductor structure. The lower semiconductor structure may include a lower waveguide along a top side of the lower semiconductor structure. The upper semiconductor structure may include an upper waveguide along a bottom side of the upper semiconductor structure. The upper semiconductor structure may be positioned over the top side of the lower semiconductor structure such that a first portion of the upper waveguide vertically overlaps a second portion of the lower waveguide. A coupler between the upper waveguide and the lower waveguide may couple optical energy of the upper waveguide to the lower waveguide. The lower waveguide may comprise semiconductor material having a wider bandgap than semiconductor material of the upper waveguide.
A method of forming a semiconductor device may include providing semiconductor substrate having a substrate top side and a dielectric layer along the substrate top side and forming a first mask layer over the dielectric layer. The method may include forming a lower cladding wall and an upper cladding wall via a first opening in the first mask layer. The method may also include forming a second mask layer over the dielectric layer and forming side cladding walls via second openings in the second mask layer. Various semiconductor devices having a buried waveguide in formed via the method are also disclosed.
A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
B32B 38/00 - Opérations auxiliaires liées aux procédés de stratification
B32B 37/18 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches toutes les couches existant et présentant une cohésion avant la stratification impliquant uniquement l'assemblage de feuilles ou de panneaux individualisés
41.
HAIRPIN WELDING AND INSPECTION FOR QUALITY ASSURANCE
A method of welding and evaluating welds on stator hairpins includes obtaining first data representative of the ends of a first pair of stator hairpins by capturing image data representative of the ends, and processing the image data to obtain a data set representative of a rectangle which fully encloses the end surfaces of the stator hairpins. After the data set is saved, a laser may be used to form a weld on the end surfaces of the stator hairpins. Then, second data is obtained representative of the weld, and the weld is evaluated by comparing the second data to the data set. A system for welding and evaluating welds on the ends of stator hairpins is also disclosed. A digital camera may be used to capture data, and the laser may be used to form the welds on the stator hairpins.
B23K 31/12 - Procédés relevant de la présente sous-classe, spécialement adaptés à des objets ou des buts particuliers, mais non couverts par un seul des groupes principaux relatifs à la recherche des propriétés, p.ex. de soudabilité, des matériaux
09 - Appareils et instruments scientifiques et électriques
Produits et services
Lasers not for medical use, namely, lasers for structured light pattern generation for use in industrial applications including machine vision, 3d mapping, alignment, and industrial inspection, not including laser pointing devices for use with firearms
VCSEL-based flood illuminators are fabricated to be compact and surface-mounted devices. A substrate is constructed as a panel array having top and bottom electrodes. Individual ones of the VCSEL dies are mounted in electrical communication with pairs of the top electrodes. The VCSEL dies are encased in an encasement disposed on the top surface of the substrate, and a diffuser structure is nano-imprinted adjacent each of the VCSEL dies. The encasement can use a potting resin and a polymer layer. The potting resin encases the VCSEL dies. The polymer layer is softer and is disposed on the potting resin. Nanoimprint lithography forms the diffuser structures in the polymer layer. The panel array is then singulated to form the individual VCSEL-based flood illuminators.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
A mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a suitable mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/30 - Structure ou forme de la région active; Matériaux pour la région active
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
46.
ADDITIVE MANUFACTURE IN METALS WITH A FIBER ARRAY LASER SOURCE AND ADAPTIVE MULTI-BEAM SHAPING
A system that uses a scalable array of individually controllable laser beams that are generated by a fiber array system to process materials into an object. The adaptive control of individual beams may include beam power, focal spot width, centroid position, scanning orientation, amplitude and frequency, piston phase and polarization states of individual beams. Laser beam arrays may be arranged in a two dimensional cluster and configured to provide a pre-defined spatiotemporal laser power density distribution, or may be arranged linearly and configured to provide oscillating focal spots along a wide processing line. These systems may also have a set of material sensors that gather information on a material and environment immediately before, during, and immediately after processing, or a set of thermal management modules that pre-heat and post-heat material to control thermal gradient, or both.
An optical driver circuit is described herein having a plurality of drive cells and delay segments between their control signals resulting in the control of the rising and falling edge rates for an optical device driven by the optical driver circuit.
H03K 5/133 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés utilisant une chaîne de dispositifs actifs de retard
This disclosure is directed an electrode and methods of making an electrode. The electrode includes a substrate and a body laminated to the substrate. The body includes an active material and an inactive material. A plurality of pores are defined by the body. A plurality of cracks are defined in a first surface of the body and a plurality of islands are defined in the first surface of the body. The plurality of cracks are wholly or partially surrounded by respective cracks of the plurality of cracks.
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
51.
TUNABLE OPTICAL WEDGE FOR REDUCING CROSSTALK IN WAVELENGTH SELECTIVE SWITCH
In a wavelength selective switch, an input port transmits an input beam, and diffraction grating disperses the input beam into optical channels. A liquid-crystal-on-silicon (LCoS) switch assembly has a phase grating profile and has addressable pixels, which are liquid crystal based. The LCoS switch assembly can selectively direct first-order diffracted beams of the optical channels for output to selected output ports. A tunable optical wedge adjacent the LCoS switch assembly can direct higher-order diffraction beams in the space between the output ports to reduce crosstalk. The wedge is a liquid crystal cell having spaced-apart resistive layers and having liquid crystal material disposed between the layers. In the wedge, the liquid crystal material can produce a phase profile in response to bias voltages applied to the resistive layers, and a beam steering angle of the phase profile can direct at least the second-order diffracted beams towards the port spacing between the ports.
G02F 1/29 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de la position ou de la direction des rayons lumineux, c. à d. déflexion
G02F 1/313 - Dispositifs de déflexion numérique dans une structure de guide d'ondes optique
H04J 14/02 - Systèmes multiplex à division de longueur d'onde
H04Q 11/00 - Dispositifs de sélection pour systèmes multiplex
09 - Appareils et instruments scientifiques et électriques
Produits et services
Fiber optic testing tools for the management, analysis,
troubleshooting, measuring and monitoring of computer
networks and communication networks; programmable optical
processors; optical filters and switches; electronic and
optical communications instruments and components, namely,
optical transmitters, optical receivers, optical
transceivers, cable television transmitters, digital
transmitters, and communication link testers for testing
communication links.
53.
OPTOELECTRONIC DEVICE HAVING ATTENUATING LENS BLOCK AND SOURCE MONITORING
An optoelectronic device is used with an optical fiber for data transmission and has a transmitter mounted on a printed circuit board (PCB) to emit light. A collimation lens on a lens block receives the light incident thereto. A microstructure on a reflective surface of the lens block has sections that reflect the light into attenuated portions. A focusing lens on the lens block focuses a first attenuated portion from first sections of the reflective surface to the optical fiber. Meanwhile, second sections of the reflective surface reflect a second attenuated portion to another reflective surface on the lens block. The second attenuated portion passes out of a refractive surface on the lens block to an receiver, which is mounted on the PCB adjacent the transmitter. The second attenuated portion of the light can be used to monitor the optical output of the transmitter.
Valuable metal compounds and a useful by-product are recovered, with high yield, from lithium-ion battery waste, without otherwise generating effluent. One or more metal sulfate solution may be used to scrub the metals from organic extractants. The sulfates may be produced in one or more evaporation/crystallization units downstream from precipitation and dissolution units. An organic extractant may be used to extract a metal of interest and other metals from feed material, scrub the other metals from the organic extractant, strip the metal of interest from the organic extractant, and recycle the extractant. An evaporation/crystallization unit may be used to output the metal of interest, while a return line transports a metal sulfate mother liquor from the evaporation/crystallization unit (after hydroxide precipitation and dissolution for purification) for use in scrubbing the other metals from the organic extractant after pH and metal concentration adjustment.
C22B 3/26 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par extraction liquide-liquide utilisant des composés organiques
Laser circuits are disclosed herein that include, in one example, a proxy laser drive cell and a proxy comparator circuit for deriving a laser driver bias control using one or more constant current supplies. Comparator circuits are disclosed that are adapted to generate an output based on a proxy voltage having first and second voltage components wherein one of the voltage components is developed based on one or more constant current supplies indicative of laser control current.
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
58.
Laser Beam Brilliance Enhancing Beam Splitting for Laser Welding/Brazing
A laser processing head can be used for joining (e.g., welding, brazing, soldering, etc.) workpieces. A collimator collimates laser light, which passes to a beam splitter. The beam splitter has anti-reflective and high-reflective coatings on peripheral and inner areas of the beam splitter. The beam splitter splits the collimated light into central or inner light from the inner area and peripheral light from the peripheral area. A main output in communication with the beam splitter directs at least the peripheral light into a main beam toward the workpieces. For example, a cable can feed a brazing wire adjacent the main beam for brazing the workpieces together. Meanwhile, a secondary output in communication with the beam splitter directs at least the central light into a secondary beam, which can be used to pre-heat the workpiece, post-heat the workpiece, or remove any surface coating from the workpiece.
A process for recovering and purifying nickel (Ni), manganese (Mn), cobalt (Co), and lithium (Li) from black mass obtained from recycling of lithium-ion batteries to produce high purity products. The process may include reductive acid leaching, impurity removal, precipitation of valuable metals such as Ni, Co, Mn, and Li. The process may also include recycling of Li compounds as hydroxide or carbonate as a source of alkaline reagent for impurity removal and/or precipitation of the valuable metals.
A wavelength reference device can be used to self-calibrate an optical channel monitor. The device includes a broadband source, a thermal source, and an optical filter, which can include one or more filters. A housing can house each of these components or can house at least the broadband source and thermal source. The broadband source emits an optical signal along an optical path. The thermal source in thermal communication with the broadband source can adjust the operating temperature of the broadband source within a temperature range. The temperature range is configured to shift optical power of the broadband source with respect to a multi-band wavelength division multiplexing (WDM) range such that the optical power meets a minimum power level towards lower and higher frequencies of the range. The optical filter(s) positioned in the optical path can filter the optical signal to create a spectral shape for use in wavelength referencing.
H04J 14/02 - Systèmes multiplex à division de longueur d'onde
H04B 10/079 - Dispositions pour la surveillance ou le test de systèmes de transmission; Dispositions pour la mesure des défauts de systèmes de transmission utilisant un signal en service utilisant des mesures du signal de données
61.
Wavelength Reference Having Repeating Spectral Features and Unique Spectral Features
A wavelength reference device includes a broadband optical source, a repeating filter, and a wavelength-specific filter. The source, which can be a super-luminescent light-emitting diode (SLED), emits optical power. The repeating filter, which can be a Fabray-Perot etalon, filters the optical power into a repeating spectral response, and the wavelength-specific filter attenuates the optical power of at least one predefined wavelength response within the wavelength band. The repeating filter and the wavelength-specific filter output a wavelength reference signal having the repeating spectral response attenuated at the at least one predefined wavelength response. The predefined wavelength response reduces the ambiguity that can occur in the repeating frequency locations found in the repeating spectral response. In this way, an absolute wavelength reference is intrinsically provided in the wavelength reference that removes the location ambiguity caused by the repeating spectral response.
A process for recovering and purifying nickel (Ni), manganese (Mn), cobalt (Co), and lithium (Li) from black mass obtained from recycling of lithium-ion batteries to produce high purity products. The process may include reductive acid leaching, impurity removal, precipitation of valuable metals such as Ni, Co, Mn, and Li. The process may also include recycling of Li compounds as hydroxide or carbonate as a source of alkaline reagent for impurity removal and/or precipitation of the valuable metals.
C22B 3/22 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés physiques, p.ex. par filtration, par des moyens magnétiques
C22B 3/42 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par extraction utilisant l'échange d'ions
C22B 3/44 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par des procédés chimiques
C22B 5/00 - Procédés généraux de réduction appliqués aux métaux
H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
A mirror device includes a multi-phase substrate and a single-phase layer. The multi-phase layer is formed of reaction-bonded silicon-carbide (RB-SiC, or Si/SiC) material. The single-phase layer is formed of elemental silicon. The single-phase layer is formed in-situ, that is, contemporaneously with, the formation of RB-SiC material. The single-phase layer is integrally bonded, as one piece, to silicon of the multi-phase substrate. Methods of making a multi-layer device, such as a mirror device, are also described. One such method includes providing a porous mass of silicon carbide and carbon, causing molten elemental silicon to infiltrate the porous mass to form RB-SiC material, simultaneously causing the silicon to flow into a cavity to form a single-phase layer of polishable silicon, integrally bonding silicon in the cavity to the RB-SiC material, and, if desired, polishing a surface of the single-phase layer.
G02B 1/02 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES Éléments optiques caractérisés par la substance dont ils sont faits; Revêtements optiques pour éléments optiques faits de cristaux, p.ex. sel gemme, semi-conducteurs
B24B 13/00 - Machines ou dispositifs conçus pour meuler ou polir les surfaces optiques des lentilles ou les surfaces de forme similaire d'autres pièces; Accessoires à cet effet
C04B 35/573 - Céramiques fines obtenues par frittage par réaction
C04B 41/00 - Post-traitement des mortiers, du béton, de la pierre artificielle ou des céramiques; Traitement de la pierre naturelle
C04B 41/91 - Post-traitement des mortiers, du béton, de la pierre artificielle ou des céramiques; Traitement de la pierre naturelle de céramiques uniquement impliquant l'enlèvement d'une partie des matières des objets traités, p.ex. par attaque chimique
A frozen substance maker may include a heat pump, a cold plate, a mold base, a mold top, and an agitator. The cold plate may be in thermal communication with the heat pump. The mold base may be positioned o the cold plate. The mold base and the cold plate may define a seed crystal chamber. The mold top may be positioned on the mold base. The mold base and the mold top may define a mold cavity in fluid communication with the seed crystal chamber. The mold top may define an overflow reservoir in fluid communication with the mold chamber. The agitator may be located at least partially within the overflow reservoir.
An optical fiber filter has an ultra-wide tuning range and includes a two-dimensional mechanical rotating mirror, a collimating and beam expanding system, and two grating. An input fiber emits a multi-wavelength optical signal into the rotating mirror, which reflects the signal to the system to form collimated beams. In turn, the collimated beams are incident on the gratings that disperse the light of different wavelengths to different angles. Lights of different diffraction angles are input into an output fiber by adjusting the rotating mirror. The rotating mirror can be used to switch between gratings of different wavebands to tune optical wavelengths in an ultra-wide range.
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
A laser device includes front and back DBRs and an interferometer. The front DBR is coupled to a front DBR electrode. The front DBR forms a first tunable multi-peak lasing filter. The back DBR is coupled to a back DBR electrode. The back DBR forms a second tunable multi-peak lasing filter. The interferometer part is coupled between the front DBR and the back DBR. The interferometer part includes first and second waveguide combiners and first and second interferometer waveguides coupled therebetween. The first waveguide combiner couples the interferometer part to the back DBR. The second waveguide combiner couples the interferometer part to the front DBR. The first interferometer waveguide is coupled to an interferometer electrode. The interferometer forms a third tunable multi-peak lasing filter.
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
H01S 5/125 - Lasers à réflecteurs de Bragg répartis [lasers DBR]
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p.ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/50 - Structures amplificatrices non prévues dans les groupes
H01S 5/068 - Stabilisation des paramètres de sortie du laser
An EDFA may include an input photodiode configured to generate a control signal based on an input signal. The EDFA may include a blind stage configured to generate an amplified signal based on the control signal and the input signal. The EDFA may include a non-blind stage configured to generate an output signal based on the amplified signal within the blind stage, the control signal, and a feedback signal. The EDFA may include a filter configured to generate a filtered signal based on the output signal. The EDFA may include an output photodiode configured to generate the feedback signal based on the filtered signal. The EDFA may include an alarm device. A signal within the non-blind stage may be generated based on the feedback signal and the control signal. The alarm device may be configured to generate an alarm signal when the signal exceeds a threshold value.
H01S 3/13 - Stabilisation de paramètres de sortie de laser, p.ex. fréquence ou amplitude
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/094 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente
In an example embodiment, a system includes a first grating-coupled laser (GCL) that includes a first laser cavity optically coupled to a first transmit grating coupler configured to redirect horizontally-propagating first light, received from the first laser cavity, vertically downward and out of the first GCL. The system also includes a second GCL that includes a second laser cavity optically coupled to a second transmit grating coupler configured to transmit second light vertically downward and out of the second GCL. The system also includes a photonic integrated circuit (PIC) that includes a first receive grating coupler optically coupled to a first waveguide and configured to receive the first light and couple the first light into the first waveguide. The PIC also includes a second receive grating coupler optically coupled to a second waveguide and configured to receive the second light and couple the second light into the second waveguide.
H01S 5/187 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités horizontales, p.ex. lasers à émission de surface à cavité horizontale [HCSEL] à réflexion de Bragg
G02B 6/124 - Lentilles géodésiques ou réseaux intégrés
G02B 6/12 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
H01S 5/10 - Structure ou forme du résonateur optique
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
A composite extractant-enhanced polymer resist comprising an extractant and a polymer resin for direct extraction of valuable metals such as rare earth metals, and more specifically, scandium, Born an acid-leaching slurry and/or acid-leaching solution in which ferric ions are not required to be reduced into ferrous ions. The extractant may be cationic, non-ionic, or anionic. More specifically, the extractant di(2-ethylhexyl)phosphoric acid may be used. The polymer resin may be non-functional or have functional groups of sulfonic acid, carboxylic acid, iminodiacetic acid, phosphoric acid, or amines. The composite extractant-enhanced polymer resin may be used for extraction of rare earth metals from acid-leaching slurries or solutions.
B01J 39/05 - Procédés utilisant des échangeurs organiques sous forme fortement acide
C22B 59/00 - Obtention des métaux des terres rares
B01J 49/06 - Régénération ou réactivation des échangeurs d'ions; Appareillage à cet effet des lits fixes contenant des échangeurs cationiques
C22B 3/38 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par extraction liquide-liquide utilisant des composés organiques contenant du phosphore
B01J 49/53 - Régénération ou réactivation des échangeurs d'ions; Appareillage à cet effet caractérisés par les réactifs de régénération pour échangeurs cationiques
B01J 20/22 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance organique
C01F 17/10 - Préparation ou traitement, p.ex. séparation ou purification
B01J 47/016 - Modification ou post-traitement des échangeurs d’ions
B01J 47/011 - Procédés d'échange d'ions en général; Appareillage à cet effet en traitement discontinu
An amplifier operable with an electric drive signal can amplify signal light having a signal wavelength. A laser diode has an active section with input and output facets. The facets are in optical communication with the signal light and are configured to pass the signal light through the laser diode. The active section is configured to generate pump light in response to injection of the electrical drive signal into the active section. The pump light has a pump wavelength different from the signal wavelength. A doped fiber doped with an active dopant is in optical communication with the signal light and is in optical communication with at least a portion of the pump light from the laser diode. The pump wavelength of the pump light is configured to interact with the active dopant of the fiber and thereby amplify the signal light.
H01S 3/0941 - Procédés ou appareils pour l'excitation, p.ex. pompage utilisant le pompage optique par de la lumière cohérente produite par un laser à semi-conducteur, p.ex. par une diode laser
A method for determining timing information in an optical communication link includes transmitting a falling edge from a transceiver positioned at a near end of the optical communication link and simultaneously starting a first timer at the transceiver positioned at the near end of the link. The transmitted falling edge is received at a transceiver positioned at a far end of the link. A falling edge is transmitted from the transceiver positioned at the far end of the link after a response delay. The transmitted falling edge is received at the transceiver positioned at the near end of the link while the first timer is simultaneously terminated at the transceiver positioned at the near end of the link and the elapsed time is recorded. The total link delay is determined based on the elapsed time.
H04B 10/077 - Dispositions pour la surveillance ou le test de systèmes de transmission; Dispositions pour la mesure des défauts de systèmes de transmission utilisant un signal en service utilisant un signal de surveillance ou un signal supplémentaire
H04B 10/079 - Dispositions pour la surveillance ou le test de systèmes de transmission; Dispositions pour la mesure des défauts de systèmes de transmission utilisant un signal en service utilisant des mesures du signal de données
75.
IMMOBILIZED CHALCOGEN AND USE THEREOF IN A RECHARGEABLE BATTERY
An immobilized chalcogen system or body includes a mixture or combination of chalcogen and carbon. The carbon can be in the form of a carbon skeleton. The chalcogen can include oxygen, sulfur, selenium, or tellurium, or a combination of any two or more of oxygen, sulfur, selenium, and tellurium. The activation energy for chalcogen to escape the immobilized chalcogen system or body is ≥96 kJ/mole.
H01M 50/109 - Boîtiers, fourreaux ou enveloppes primaires d’une seule cellule ou d’une seule batterie caractérisés par leur forme ou leur structure physique en forme de bouton ou plate
A free-space optical communication system has a conversion assembly, a fiber array, and a wavelength selective switch (WSS) assembly. The conversion assembly converts circular polarization states of incoming optical signals to linear polarization states and converts linear polarization states to circular polarization states for outgoing optical signals. The fiber array has polarization-maintaining (PM) optical fibers arranged in optical communication between the conversion assembly and the WSS assembly to preserve the linear polarization states of the optical signals. The WSS assembly has free-space optics, such as dispersion element and beam-steering element, with optical axes arranged relative to the PM optical fibers. The WSS assembly selectively switches WDM channels of the optical signals relative to the PM optical fibers. Fast and slow axes of the PM optical fibers are aligned to the optical axes of the free-space optics.
The present disclosure provides a MEMS -based variable optical attenuator (VOA) array, sequentially including an optical fiber array, a micro-lens array, and a MEMS-based micro-reflector array to form a VOA array having several optical attenuation units. The MEMS-based micro-reflectors can change the propagation direction of a beam, causing a misalignment coupling loss to the beam and thereby achieving optical attenuation, with a broad range of dynamic attenuation, low polarization dependent loss and wavelength dependent loss, good repeatability, short response time (at the millisecond level), etc. Arrayed device elements are used as assembly units of the present disclosure, and the assembly of arrayed elements facilitates tuning in batches. Accordingly, automation levels are improved, and the production costs are reduced.
A system that uses a scalable array of individually controllable laser beams that are generated by a fiber array system to process materials into an object. The adaptive control of individual beams may include beam power, focal spot width, centroid position, scanning orientation, amplitude and frequency, of individual beams. Laser beam micro scanner modules (MSMs) are arranged into 2D arrays or matrices. During operation of the MSMs, a fiber tip that projects the laser beam is displaced along the x and y-axis in order to scan the focal spot. Each MSM within a matrix can process a corresponding cell (e.g., one square centimeter) during focal spot scanning, and the plurality of MSMs may be operated in parallel to process a plurality of corresponding cells (e.g., with a 10×10 matrix of MSM, 100 cm2) without rastering or otherwise repositioning the assembly over the build surface.
B23K 26/082 - Systèmes de balayage, c. à d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
B29C 64/153 - Procédés de fabrication additive n’utilisant que des matériaux solides utilisant des couches de poudre avec jonction sélective, p.ex. par frittage ou fusion laser sélectif
B29C 64/236 - Moyens d’entraînement pour un mouvement dans une direction dans le plan d’une couche
B29C 64/268 - Agencements pour irradiation par faisceaux d’électrons [FE]
B23K 26/08 - Dispositifs comportant un mouvement relatif entre le faisceau laser et la pièce
B23K 26/06 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples
An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
C30B 15/14 - Chauffage du bain fondu ou du matériau cristallisé
An optical element includes a transmissive layer arranged on a substrate and made up of discrete volumes of first and second optical media. The layer is between the substrate and another optical medium. The volumes are arranged so that, averaged over a wavelength’s distance of an incident optical signal, the effective reflectivities of the two surfaces of the transmissive layer and the effective double-pass phase delay through the transmissive layer are substantially constant across the transmissive layer. The reflectivities and phase delay result in net power reflectivity that differs from that of the substrate in direct contact with the other optical medium. The transmissive layer can be arranged as an anti-reflection layer.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Spectroscopy instruments and specially adapted accessories, namely, a spectroscopy system comprising specialized optical filters, lasers, detectors, sensors, microscopes and recorded computer software and hardware, used for measuring the chemical composition and molecular structure of materials, and specially adapted accessories for use therewith
82.
LASER-ROUGHENED REACTION-BONDED SILICON CARBIDE FOR WAFER CONTACT SURFACE
A method of making a ceramic device with a controlled roughness includes using a defocused laser beam to roughen a surface of a ceramic substrate, and removing one or more portions of the roughened surface without removing all of the roughened surface. If desired, the ceramic device may include reaction-bonded silicon carbide, and an opening may be formed in the device so that the device can be used to apply a clamping suction to a wafer surface. A ceramic surface with a controlled roughness is also disclosed. The defocused laser beam may be used to make the surface rough enough to prevent it from sticking to a mating element, and to have adequate wear resistance, but not so rough as to prevent the formation of sufficient suction to clamp the surface to a mating element.
A dome protects an articulating gimbal that orients a line-of-sight of a laser beam. The dome is mounted on a host and encloses the articulating gimbal. The dome has first and second shells. The first shell is rotatable about a first axis relative to the host, and the second shell is disposed on the first shell and is rotatable about a second axis relative to the first shell. A first actuator is coupled to the first shell and is configured to rotate the first shell about the first axis relative to the host. A second actuator is coupled to the second shell and is configured to rotate the second shell about the second axis relative to the first shell. A controller is coupled to the first and second actuators and is configured to match the rotation of the first and second shells to the line-of-sight of the laser beam.
A spatial light modulator (100) comprises a liquid crystal material (104), first and second electrodes (106, 108) disposed on opposing sides of the liquid crystal material (104), and a diffractive optical element (120) disposed between the electrodes (106, 108) and extending laterally across the modulator (100). The diffractive optical element (120) comprises an array of diffracting formations (122) formed from sub-wavelength structures. The array of diffracting formations (122) defines a phase profile adapted to modify the incident wavefront of light reflected off the second electrode and to apply a position-dependent wavefront correction to the incident wavefront of light.
85.
SILVER-DOPED SULFUR CATHODE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY
An active cathode material is doped with silver to effectively improve the cathode's electrical conductivity. The active material may be sulfur, and the silver may be in the form of silver, silver sulfide, or both. If desired, the cathode material includes a matrix of conductive nano-particles which include elemental sulfur, silver and or silver sulfide. The present disclosure may be applicable to other battery materials as well, such as, for example, lithium iron phosphate.
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p.ex. phosphates, silicates ou borates
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
A spatial light modulator (100) comprises a liquid crystal material (104), first and second electrodes (106, 108) disposed on opposing sides of the liquid crystal material (104), and a diffractive optical element (120) disposed between the electrodes (106, 108) and extending laterally across the modulator (100). The diffractive optical element (120) comprises an array of diffracting formations (122) formed from sub-wavelength structures. The array of diffracting formations (122) defines a phase profile adapted to modify the incident wavefront of light reflected off the second electrode and to apply a position-dependent wavefront correction to the incident wavefront of light.
An electrochemical device includes a first electrode having 50 wt.% to 99 wt.% immobilized sulfur, 1 wt. % to 12 wt.% binder, and 0.2 wt.% to 12 wt.% porous composition. The porous composition includes 0.0001 wt.% to 40 wt.% of a first porous material having an average pore size less of than 2 nm and 0.05 wt.% to 40 wt.% of a second porous material having an average pore size of 2 nm to 100 nm. The electrochemical device further includes a second electrode opposed from the first electrode and an electrolyte positioned between the first electrode and the second electrode.
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
H01M 4/133 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de matériau carboné, p.ex. composés d'intercalation du graphite ou CFx
H01M 4/136 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p.ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
88.
SPECTRAL BEAM COMBINING OPTICAL ASSEMBLY AND METHOD OF FABRICATION
An apparatus is used for spectral beam combining laser wavelengths into a combined beam. The apparatus has an integrated, sealed optical assembly that can be installed and replaced in the field. The optical assembly has a housing composed of a material, such as fused silica, transparent to the laser wavelengths. Transmissive gratings are disposed on ends of the housing and have their datums facing the sealed interior. V-grooves on a shelf at one end of the housing are disposed at an angle relative to the first grating. Fiber ends of a fiber array have end caps affixed in the V-grooves and aligned to the datums of the first grating. The fiber ends transmit the laser wavelengths in an array of beams toward the first grating, which diffracts the laser wavelengths to the second grating. In turn, the second grating transmits the laser wavelengths as a combined beam from the second end of the housing.
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
An electrochemical device includes a first electrode having 50 wt.% to 99 wt.% immobilized sulfur, 1 wt. % to 12 wt.% binder, and 0.2 wt.% to 12 wt.% porous composition. The porous composition includes 0.0001 wt.% to 40 wt.% of a first porous material having an average pore size less of than 2 nm and 0.05 wt.% to 40 wt.% of a second porous material having an average pore size of 2 nm to 100 nm. The electrochemical device further includes a second electrode opposed from the first electrode and an electrolyte positioned between the first electrode and the second electrode.
H01M 4/136 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p.ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
H01M 4/1397 - Procédés de fabrication d’électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p.ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01M 4/96 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes inertes ayant une activité catalytique, p.ex. pour piles à combustible Électrodes à base de carbone
Described herein is a wavelength reference device comprising a housing defining an internal environment having a known temperature. A broadband optical source is disposed within the housing and configured to emit an optical signal along an optical path. The optical signal has optical power within a wavelength band of interest. An optical etalon is also disposed within the housing and positioned in the optical path to filter the optical signal to define a filtered optical signal that includes one or more reference spectral features having a known wavelength at the known temperature. The device also includes an optical output for outputting the filtered optical signal.
An optoelectronic circuit used with signal light comprises photonic devices disposed on a platform. The photonic devices are configured to condition the signal light and are fabricated with an optical characteristic being electronically tunable. A fabricated performance of the optical characteristic can be varied from a target performance due to a difference (e.g., alteration, change, error, or discrepancy) in the process used to fabricate the device. A ground bus, a power bus, and banks of electronic components are disposed on the platform in electrical communication with the photonic devices. The electronic components in a given bank are selectively configurable to tune the optical characteristic of the associated device so a variance can be diminished between the fabrication and target performances of the device's optical characteristic due to the difference in the fabrication process.
G02B 6/12 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/13 - Circuits optiques intégrés caractérisés par le procédé de fabrication
93.
OPTICAL TRANSCEIVER WITH INTEGRATED DISPERSION COMPENSATION FOR HIGH BIT RATE APPLICATIONS
An optical configuration for providing chromatic dispersion compensation in a high data rate communication system is based upon using optical dispersion compensation in the receive signal path prior to performing an O/E conversion. The performance of chromatic dispersion compensation in the optical domain thus presents a "corrected" optical signal as an input to the photodetecting device. The inclusion of optical-based chromatic dispersion compensation allows for a higher data rate to be used without introducing an unacceptable bit error rate; alternatively, the use of optical-based dispersion correction allows for the reach of a data communications network to be increased.
H04B 10/2513 - Dispositions spécifiques à la transmission par fibres pour réduire ou éliminer la distorsion ou la dispersion due à la dispersion chromatique
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
A system may include a wafer that includes ICs and defines cavities. Each cavity may be formed in a BEOL layer of the wafer and proximate a different IC. The system may also include an interposer that includes a transparent layer configured to permit optical signals to pass through. The interposer may also include at least one waveguide located proximate the transparent layer. The at least one waveguide may be configured to adiabatically couple at least one optical signal out of the multiple ICs. Further, the interposer may include a redirecting element optically coupled to the at least one the waveguide. The redirecting element may be located proximate the transparent layer and may be configured to receive the at least one optical signal from the at least one waveguide. The redirecting element may also be configured to vertically redirect the at least one optical signal towards the transparent layer.
A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A wafer carrier that exhibits a thin, low-profile includes a bottom support plate upon which a thinned semiconductor wafer may be positioned, with a holding ring disposed to surround the periphery of the wafer and engage with the bottom support plate to hold the wafer in a fixed position between the two components. The bottom support plate is formed to include a plurality of apertures for pulling a vacuum through the carrier, as well as features that engage with the holding ring and alignment fiducials for properly registering the orientation of the wafer's surface with respect to the wafer carrier and other testing equipment using the wafer carrier.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p.ex. marques de repérage, schémas de test
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
100.
Polarization-maintaining wavelength selective switch for free-space optical communication
A free-space optical communication system has a conversion assembly, a fiber array, and a wavelength selective switch (WSS) assembly. The conversion assembly converts circular polarization states of incoming optical signals to linear polarization states and converts linear polarization states to circular polarization states for outgoing optical signals. The fiber array has polarization-maintaining (PM) optical fibers arranged in optical communication between the conversion assembly and the WSS assembly to preserve the linear polarization states of the optical signals. The WSS assembly has free-space optics, such as dispersion element and beam-steering element, with optical axes arranged relative to the PM optical fibers. The WSS assembly selectively switches WDM channels of the optical signals relative to the PM optical fibers. Fast and slow axes of the PM optical fibers are aligned to the optical axes of the free-space optics.
