Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2) (excluding a compound corresponding to the first onium salt compound), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4represents a monovalent organic group having 1 to 40 carbon atoms; one of Rf21and Rf22represents a fluorine atom and the other represents a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar represents a monovalent organic group having a 5- to 40-membered aromatic ring; R5to R8122 each independently represent an integer of 1 to 6; and X represents a single bond or a bivalent hetero-atom-containing group.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and an alcohol-type solvent having a boiling point of 90°C or higher. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, or a monovalent hydrocarbon group; one of Rf11and Rf1211 + represents a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity and LWR performance can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms or a group having such a structure that in which a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; one of Rf11and Rf1211 +represents a monovalent radiation-sensitive onium cation.) (In formula (2), R422 + represents a monovalent organic cation.)
Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when forming a resist pattern with a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition contains: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit that has an acid-dissociable group; and a solvent. (In formula (1), R1is a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group including a divalent heteroatom-containing group between the carbon-carbon bonds of the aforementioned hydrocarbon group. R2and R3are each a hydrogen atom or a monovalent hydrocarbon group. One of Rf11and Rf1211 +is a monovalent radiation-sensitive onium cation.) (In formula (2), R4is a monovalent organic group that includes a cyclic structure and has 3-40 carbon atoms. Rf21and Rf2222 + is a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition with which it is possible to form a resist film that is capable of exhibiting sensitivity, LWR performance, water repellency, and development defect inhibitory ability at satisfactory levels; and a pattern formation method. A radiation-sensitive resin composition comprising an onium salt compound represented by formula (1), a first resin comprising structural units that have an acid-dissociable group, a second resin that has a higher fluorine content than the first resin and has an acid-dissociable group, and a solvent. (In formula (1), R1is a group comprising a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group comprising a divalent hetero atom-containing group between a carbon-carbon bond of said hydrocarbon group. Each of R2and R3is an independent hydrogen atom or a monovalent hydrocarbon group. When a plurality of R2s and a plurality of R3s exist, the plurality of R2s are the same as or different from each other and the plurality of R3s are the same as or different from each other. One of Rf11and Rf12is the fluorine atom and the other one thereof is the fluorine atom or a monovalent fluorinated hydrocarbon group. When a plurality of Rf11s and a plurality of Rf12s exist, the plurality of Rf11s are the same as or different from each other and the plurality of Rf1211 + is a monovalent radiation-sensitive onium cation.)
The present invention provides a radiation sensitive resin composition, a pattern forming method, etc., capable of achieving, at sufficient levels, sensitivity, LWR performance, and process window when next-generation technology is applied. This radiation sensitive resin composition comprises a resin that includes a repeating unit A having an acid dissociable group, an onium salt that has an organic acid anion moiety and an onium cation moiety, and a solvent, wherein the onium salt includes at least one group selected from the group consisting of a pentafluorosulfanyl group, a pentafluorosulfanyloxy group, and a pentafluorosulfanylthio group.
Provided are a radiation-sensitive resin composition and a pattern formation method by which sensitivity, critical dimension uniformity (CDU) performance, and development residue performance can be exhibited on a sufficient level when next-generation technology is applied. The radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit A having an acid-dissociable group, and a structural unit D having a phenolic hydroxy group; and a solvent. The structural unit D has a phenolic hydroxy group and an alkyl group on the same aromatic ring, and in the aromatic ring of the structural unit D, the alkyl group is bonded to a carbon atom adjacent to the carbon atom to which the phenolic hydroxy group is bonded. The radiation-sensitive resin composition further satisfies at least one condition selected from the group consisting of the following conditions 1 and 2. Condition 1: The resin is a radiation-sensitive acid-generating resin further including a structural unit B including an organic acid anion moiety, and an onium cation moiety including an aromatic ring structure having a fluorine atom. Condition 2: An onium salt (excluding the radiation-sensitive acid-generating resin) including an organic acid anion moiety and an onium cation including an aromatic ring structure having a fluorine atom is further provided.
Provided are a method for producing a semiconductor substrate and a silicon-containing composition which are capable of forming a silicon-containing film with good resist pattern collapse suppression properties and good film thickness uniformity. This method involves a step for directly or indirectly coating a substrate with a silicon-containing composition, a step for coating, with a resist film forming composition, the silicon-containing film formed in the silicon-containing composition coating step, an exposure step for irradiating, with radioactive rays, the resist film formed in the resist film forming composition coating step, and a step for at least developing the exposed resist film, wherein the silicon-containing composition contains a silicon-containing compound, a polymer having a structural unit represented by formula (1) below, and a solvent, and the content ratio of the silicon-containing compound accounting for components other than the solvent in the silicon-containing composition is 50%-99.9% by mass. (In formula (1), RA1represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. RA2 is a monovalent organic group having 1-20 carbon atoms.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
9.
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND
Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C07C 13/547 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à trois cycles condensés un cycle au moins n'étant pas un cycle à six chaînons, les autres cycles étant au plus des cycles à six chaînons
C07C 33/36 - Alcools polyhydroxyliques contenant des cycles aromatiques à six chaînons et d'autres cycles
C07C 39/17 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques sans autre insaturation que celle des cycles aromatiques contenant d'autres cycles en plus des cycles aromatiques à six chaînons
C07C 39/23 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques contenant des cycles aromatiques à six chaînons et d'autres cycles avec une insaturation autre que celle des cycles aromatiques
C07C 43/215 - Ethers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons avec une insaturation autre que celle des cycles aromatiques à six chaînons
C07D 207/335 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
C07D 333/18 - Radicaux substitués par des hétéro-atomes, autres que les halogènes, liés par des liaisons simples par des atomes de soufre
The present invention provides: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition that is capable of forming a resist underlayer film having excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a repeating unit (1) which comprises an organic sulfonic acid anion moiety and an onium cation moiety.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
11.
RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
This radiation-sensitive resin composition comprises a first polymer and a compound. The first polymer has a first structural unit that contains a substructure in which a hydrogen atom in a carboxy group, phenolic hydroxyl group, or amide group is substituted by a group with formula (1); has a second structural unit that contains a phenolic hydroxyl group; and has a solubility in developer that is modified by the action of acid. The compound has a monovalent organic acid anion and a monovalent radiation-sensitive onium cation that contains an aromatic ring in which at least one hydrogen atom is substituted by a fluorine atom or a fluorine atom-containing group.
The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. The present invention also provides: a composition for chemical mechanical polishing, the composition being capable of polishing a silicon oxide film at a high polishing rate, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. A method for producing abrasive grains according to the present invention comprises a step in which particles each having a surface to which a hydroxyl group (-OH) is immobilized via a covalent bond, an alkoxysilane having an epoxy group, and a basic compound are mixed and heated.
This radiation-sensitive composition contains a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), A1represents a (m+n+2)-valent aromatic ring group. In formula (1), "-OH" and "-COO-" are bound to the same benzene ring in A1. An atom to which "-OH" is bound is located adjacent to an atom to which "-COO-" is bound. R1represents a monovalent group having a cyclic(thio)acetal structure. M+ represents a monovalent organic cation.
Expanded beads comprising a linear low density polyethylene as a base resin, wherein: the linear low density polyethylene has a biomass degree of 40% or more as measured by ASTM D 6866; in a DSC curve obtained by heating from 23°C to 200°C at a heating rate of 10°C/min, the expanded beads have a crystal structure in which are present a melting peak (intrinsic peak) unique to the linear low density polyethylene, and one or more melting peaks (high temperature peaks) on a higher temperature side than the intrinsic peak; the total heat of fusion of the expanded beads is at least 70 J/g and at most 100 J/g; and the heat of fusion at the high temperature peak is at least 10 J/g and at most 50 J/g.
C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
15.
EXPANDED BEAD PRODUCTION METHOD, AND EXPANDED BEADS
A method for producing expanded beads having a bulk density of 10-240 kg/m3, the method expanding resin beads having, as the base resin, a mixed resin from at least two linear low density polyethylenes. The mixed resin contains a polyethylene A having a biomass degree of at least 50% and a melt flow rate (MFR) of 0.1-3 g/10min, and a polyethylene B. The difference between the MFR of A and the MFR of B is 0-2 g/10min, the mass ratio of A and B is 5/95-95/5, and the biomass degree of the mixed resin is 5% or more. In a DSC curve, the expanded beads have a crystal structure in which are present melting peaks unique to the linear low density polyethylenes and a high-temperature peak on the high-temperature side thereof, the heat of fusion at the high-temperature peak being 10-50 J/g.
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
16.
METHOD FOR PRODUCING FOAMABLE POLYAMIDE-BASED RESIN PARTICLES, METHOD FOR PRODUCING POLYAMIDE-BASED RESIN FOAMED PARTICLES, AND POLYAMIDE-BASED RESIN FOAMED PARTICLES
A method for producing foamable polyamide-based resin particles according to the present invention includes impregnating polyamide-based resin particles with an inorganic physical foaming agent in a gas phase, wherein the polyamide-based resin particles have a water content of at least 2.5 mass% and contain 0.5-10 mass% of carbon black. The foamable polyamide-based resin particles are obtained by heating and foaming foamable polyamide resin particles.
The present invention causes a radiation-sensitive composition to contain a polymer including acid-labile group and a compound (Q) given by formula (1). In formula (1), L1represents an ester group, -CO-NR3-, a (thio) ether group, or a sulfonyl group. L2 represents a single bond or a divalent linking group.
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
C07C 309/27 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes carboxyle liés au squelette carboné
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
The present invention provides a method for producing a geopolymer foam, wherein: a reaction slurry that contains an aluminosilicate, an alkali metal silicate, aggregate and water is obtained; an expandable slurry is formed by adding a foaming agent to the reaction slurry; and a geopolymer foam is produced by heating the expandable slurry. This method for producing a geopolymer foam is characterized in that: mica which has an average particle diameter of 50-500 µm and a volume ratio (X) of particles having a particle diameter of 10 µm or less of 3% or less is used as the aggregate; and the reaction slurry has a viscosity of 3,000-15,000 Pa∙s at 23°C.
C04B 20/00 - Emploi de matières comme charges pour mortiers, béton ou pierre artificielle prévu dans plus d'un groupe et caractérisées par la forme ou la répartition des grains; Traitement de matières spécialement adapté pour renforcer leur propriétés de charge dans les mortiers, béton ou pierre artificielle prévu dans plus d'un groupe de ; Matières expansées ou défibrillées
C04B 38/02 - Mortiers, béton, pierre artificielle ou articles de céramiques poreux; Leur préparation par addition d'agents chimiques gonflants
19.
METHOD FOR PRODUCING THERMOPLASTIC RESIN FOAM PARTICLE MOLDED BODY
A method for producing a thermoplastic resin foam particle molded body according to the present invention comprises a crack filling step and an in-mold molding step. Foam particles (2) to be used in the crack filling step have a columnar shape, while having one or more defective parts of one or more kinds, the defective parts being selected from the group consisting of through holes and grooves. In cut surfaces of the foam particles (2) obtained by cutting each foam particle (2) by a plane that is perpendicular to the axial direction of the foam particle (2) at the center of the axial direction, the ratio Ca/A of the average cross-sectional area Ca of one defective part to the average cross-sectional area A of the foam particles (2) is 0.01 to 0.20, and the ratio Ct/A of the total cross-sectional area Ct of the defective parts to the average cross-sectional area A of the foam particles (2) is 0.02 to 0.20. The filling rate F of the foam particles (2) in a state where a mold (1) is completely closed is 125% to 220%.
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse
20.
PRODUCTION METHOD FOR THERMOPLASTIC RESIN FOAMED PARTICLE MOLDED BODY
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/54 - Alimentation en matière à mouler dans une cavité de moulage ouverte ou sur une surface mobile, c.à d. pour la fabrication d'objets de longueur indéfinie sous forme de particules ou de grains expansibles
C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse
21.
PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE
The present invention provides a photosensitive resin composition which contains a polymer (A) that has an acid-cleavable group, a photoacid generator (B) and a solvent (C), wherein: the polymer (A) comprises a structural unit (I) that is represented by formula (1) and a structural unit (III) that has a glass transition temperature Tg of 50°C or less in the form of a homopolymer; and the photoacid generator (B) is a compound which generates an acid that has a van der Waals volume of 200 Å3or more when irradiated with active light or radiation. The present invention also provides: a method for forming a resist pattern film, the method using this photosensitive resin composition; and a method for producing a plated shaped article. The details of R1A and L in formula (1) are as described in the description.
The purpose of the present invention is to provide: a semiconductor substrate production method using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. This semiconductor substrate production method includes a step in which a resist underlayer film-forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is formed directly or indirectly on the resist underlayer film formed in the application step, and a step in which etching is performed using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound including a boron atom.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage
23.
RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
A radiation-sensitive composition contains: (A) a polymer; and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing four or more iodine atoms.
A radiation-sensitive composition contains: (A) a polymer including a structural unit (U) represented in formula (1); and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing an iodine atom. In formula (1), R1is a hydrogen atom, a methyl group, or the like. X1is a single bond, an ether bond, an ester bond, or the like. Ar1is a cyclic group bonded to X1via an aromatic ring. A hydroxyl group or a –ORYgroup is bonded to the atom adjacent to the atom bonded to X1among the atoms constituting the aromatic ring in Ar1. RY is an acid-dissociable group.
[Problem] The present invention addresses the problem of providing: a photosensitive resin composition which has excellent volatility regarding a solvent therein and from which it is possible to produce a resist coating film in which the generation of coating bubbles is sufficiently suppressed; a method for producing a resist pattern film using the photosensitive resin composition; and a method for producing a plated shaped article using the resist pattern film. [Solution] A photosensitive resin composition characterized by comprising: a polymer (A) that has a structural unit having a phenolic hydroxyl group and a structural unit derived from a (meth)acrylate having an acid-dissociable group; a specific photoacid generator (B); and an organic solvent (C) that contains 3-ethoxyethyl propionate, wherein the solid content concentration is 30 mass% or more.
This radiation-sensitive resin composition contains a polymer which has a first structural unit represented by the following formula (1) and of which the solubility in a developer changes under the action of an acid, and a compound represented by the following formula (2).
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
Provided are a radiation-sensitive resin composition that has suitable storage stability and makes it possible to form a resist film with excellent sensitivity, LWR performance, water repellency, and development defect-suppressing performance, and a pattern formation method. The radiation-sensitive resin composition contains: a first resin including a structural unit (I) represented by formula (1), a structural unit (II) represented by formula (2) (excluding the structural unit represented by formula (1)), and a structural unit (III) having an acid-cleavable group; and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L1is an alkanediyl group having 1-5 carbon atoms. Rf1is a monovalent fluorinated hydrocarbon group having 2-10 carbon atoms and 5-7 fluorine atoms. In formula (2), RK2is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Lfis a fluorine-substituted or unsubstituted divalent organic group having 1-20 carbon atoms. L2is *-COO- or *-OCO-. * is a bond on the Lfside. p is an integer of 0-2. When a plurality of Lfand L2are present, the plurality of Lfand L2may be the same or different from each other. Rf2is a fluorine-substituted or unsubstituted monovalent organic group having 1-20 carbon atoms. Lfand Rf2 have a total of one or more fluorine atoms.)
Provided are a radiation-sensitive resin composition capable of forming a resist film with excellent sensitivity, LWR performance, water repellency, and suppression of development flaws, and having good storage stability; and a pattern forming method. A radiation-sensitive resin composition comprising a polymer comprising structural units (I) represented by formula (1) and structural units differing from said structural units (I); an onium salt represented by formula (i); and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or trifluoromethyl group. L1is a 1-5 carbon alkanediyl group. Rf1is a 2-10 carbon fluorinated hydrocarbon group with 5-7 fluorine atoms.) (In formula (i), Ra1is a substituted or unsubstituted 1-40 carbon monovalent organic group in which the atom adjacent to the sulfur atom is not bound to a fluorine atom or fluorinated hydrocarbon group. X+ is a monovalent onium cation.)
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
The purpose of the present invention is to provide: a radiation-sensitive resin composition which enables the formation of a resist film having excellent sensitivity, LWR performance, water repellency and development defect reducing properties and has satisfactory storage stability; and a pattern formation method. Provided is a radiation-sensitive resin composition comprising: a polymer containing a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by formula (α); and a solvent. (In formula (1), RK1represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; L1represents an alkanediyl group having 1 to 5 carbon atoms; and Rf1represents a fluorinated hydrocarbon group having 5 to 7 fluorine atoms and also having 2 to 10 carbon atoms.) (In formula (α), RWrepresents a monovalent organic group containing a cyclic structure and having 3 to 40 carbon atoms; Rfaand Rfbeach independently represent a fluorine atom or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; R11and R12each independently represent a hydrogen atom, a fluorine atom, a hydrocarbon group having 1 to 10 carbon atoms, or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; n1 represents an integer of 1 to 4, in which, when n1 is 2 or more, a plurality of Rfa's and Rfb's are the same as or different from each other; n2 represents an integer of 0 to 4, in which, when n2 is 2 or more, a plurality of R11's and R12's are the same as or different from each other; no carbonyl group is interposed between a sulfur atom in a sulfonic acid ion and the cyclic structure in RW; and Z+ represents a monovalent onium cation.)
C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, MOLDED OBJECT FROM EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, AND PRODUCTION METHOD THEREFOR
A molded object from expanded crystalline-thermoplastic-resin particles which is obtained by mutually fusion-bonding columnar expanded crystalline-thermoplastic-resin particles (1) having no through-hole. The molded object from expanded crystalline-thermoplastic-resin particles has an expansion ratio of 15-90. The molded object from expanded crystalline-thermoplastic-resin particles has a closed-cell content of 90% or higher. The molded object from expanded crystalline-thermoplastic-resin particles has an open-cell content of 2-12%.
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
31.
POLYPROPYLENE-BASED RESIN FOAM PARTICLES, METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN FOAM PARTICLES, AND LOGISTICS PACKAGING MATERIAL
Foam particles which have a mass ratio of foam core layer to coating layer of 97:3-88:12 and a bulking factor of 5-45 times, inclusive, and have a coating layer which comprises PE-LLD, wherein the melting point of the PE-LLD is 105-130°, inclusive, and the bend elastic constant Ms of the PE-LLD is 120-600MPa, inclusive. A logistics packaging material comprising a foam-particle molded body, wherein the scale factor of the molded body is 5-45 times, inclusive, the maximum flexural strength thereof is 0.3MPa or higher, the product of the tensile strength times the tensile elongation is 18MPa·% or higher, the coefficient of dynamic friction against a polyvinyl chloride sheet is at least 0.4 and less than 0.7, and the coefficient of static friction against a polyvinyl chloride sheet is less than 1.0.
NATIONAL UNIVERSITY CORPORATION, IWATE UNIVERSITY (Japon)
Inventeur(s)
Oishi Yoshiyuki
Tsukamoto Tadashi
Kadota Toshiaki
Iizuka Shunsuke
Okamoto Koichi
Abrégé
This polymer consists of a repeating unit represented by formula (1). [In formula (1), -N(R')-RN(R')- is a structure derived from an unsubstituted or substituted dimer diamine, and R', R1and R2 are each independently a hydrogen atom, a halogen atom, an unsubstituted or substituted hydrocarbon group having 1-20 carbon atoms, or an unsubstituted or substituted heterocyclic aromatic group having 3-20 carbon atoms.]
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromolécule; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
33.
POLYMER, COMPOSITION, CURED PRODUCT, LAMINATED BODY, AND ELECTRONIC COMPONENT
One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminated body, or an electronic component, said composition including a polymer containing a repeating unit that is represented by formula (1). [In formula (1): -N(R')-R3-N(R')- is a structure derived from a dimer diamine substituted by an unsubstituted group or a substituted group; R', R1, and R2each independently represent a hydrogen atom, a halogen atom, a C1-20 hydrocarbon group substituted by an unsubstituted or a substituted group, a C3-20 heterocyclic aliphatic group substituted by an unsubstituted or a substituted group, or a C3-20 heterocyclic aromatic group substituted by an unsubstituted or a substituted group; and -NR1R2may be a nitrogen-containing heterocyclic group with 5-20 ring-forming atoms in which R1and R2 are bound to each other.]
C08L 79/04 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
B32B 27/42 - Produits stratifiés composés essentiellement de résine synthétique comprenant des résines de condensation d'aldéhydes, p.ex. avec des phénols, des urées ou des mélamines
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromolécule; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
34.
METHOD FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, HOLDER FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, AND METHOD FOR EVALUATING INTRAVASCULAR INDWELLING DEVICE
In this method for manufacturing an intravascular indwelling device, there are used a cylindrical holder (1) for holding an intravascular indwelling device (20) in an interior space, and an outer cylindrical body (2) that has an inside diameter larger than the outside diameter of the holder (1). The holder (1) holding the intravascular indwelling device (20) is housed in the outer cylindrical body (2), and a suspension (S) of the target cells is fed into the outer cylindrical body (2). The outer cylindrical body (2) and the holder (1) are operated so that the suspension (S) flows relative to the intravascular indwelling device (20) while in contact with the intravascular indwelling device (20), and the target cells are cultured.
A61L 31/00 - Matériaux pour autres articles chirurgicaux
A61F 2/86 - Stents ayant une forme caractérisée par des éléments filiformes; Stents ayant une forme caractérisée par une structure de type filet ou de type à mailles
C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
A lens is produced by a method comprising: a step for applying a radiation-sensitive composition onto a base material to form a coating film; a step for irradiating a portion of the coating film with a radioactive ray to generate an acid in an exposed portion; a step for developing the coating film that has been irradiated with the radioactive ray to form a pattern; a step for irradiating the pattern with a radioactive ray; and a step for heating the pattern after the irradiation of the pattern with the radioactive ray to form a lens. The radiation-sensitive composition comprises at least one polymer (A), a radiation-sensitive acid generator (B) and a solvent(C), in which the polymer (A) contains, in a single molecule or different molecules, a structural unit (a1) having a hydroxyl group bound to an aromatic ring and a structural unit (a2) having such a configuration that an acid-dissociating group is detached by the action of an acid to generate a carboxyl group.
Provided are: a method for producing a semiconductor substrate using a cleaning fluid excellent in terms of the property of cleaning peripheral portions of substrates and waste-liquid stability; a method for forming a resist underlayer film; and the cleaning fluid. This method for producing a semiconductor substrate comprises: a step in which a composition for resist underlayer film formation is applied directly or indirectly to a substrate; a step in which peripheral portions of the substrate are cleaned with a cleaning fluid; and a step in which after the cleaning step, a resist pattern is formed directly on or indirectly over the resist underlayer film formed in the application step. The composition for resist underlayer film formation includes a metal compound and a solvent, and the cleaning fluid includes an organic acid.
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided is an inorganic foam, a base material of the inorganic foam being an inorganic polymer having a leucite crystal structure. The area of a peak derived from the leucite crystal in an X-ray diffraction spectrum of the inorganic foam is characterized by satisfying Equation (1). (1): D(geo)/D(pur)≧0.5 (D(geo) denotes the area of a peak located at 2θ=27.3° derived from the leucite crystal in the X-ray diffraction spectrum of the inorganic foam, and D(pur) is the area of a peak located at 2θ=27.3° derived from the leucite crystal in an X-ray diffraction spectrum of a pure material of leucite.)
C04B 35/00 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
38.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, ACID GENERATOR, AND COMPOUND
Provided is a radiation-sensitive composition containing: a polymer having an acid dissociable group; and at least one compound (b) selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). In formula (1), R1is a 1-20C monovalent organic group. R2is either a single bond, or is a 1-20C bivalent group that bonds to the N- in formula (1) through -CR4R5- or an aromatic ring. Ma+is an a-valent cation. In formula (2), R7is a group having a partial structure in which an iodine atom is bonded to an aromatic ring. Mb+ is a b-valent cation.
C07C 311/09 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé le squelette carboné étant substitué de plus par au moins deux atomes d'halogène
C07C 311/21 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes sulfonamide lié à un atome de carbone d'un cycle aromatique à six chaînons
Provided is a radiation-sensitive composition comprising a polymer having a structural unit represented by formula (1) and a photodegradable base. In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or the like. X1is an alkanediyl group, an oxygen atom, or a sulfur atom. Y1is a monovalent hydrocarbon group, a monovalent fluorinated hydrocarbon group, or a halogen atom. R2is a monovalent organic group. B1is a single bond or *1−COO−. R3is a substituted or unsubstituted divalent hydrocarbon group. Z1is a single bond, −O−, −COO−, −OCO−, −OCOO−, −CONR4−, −NR4CO−, −OCONR4-, −NR4COO−, or −NR4CONR5−. R4and R5 are hydrogen atoms or monovalent hydrocarbon groups.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which includes a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the coating step, and a step for etching while using the resist pattern as a mask, wherein: the composition for forming the resist underlayer film contains a compound having a partial structure represented by formula (1), and a solvent; and the compound has at least one monovalent group which includes an aromatic heterocycle having a 5- to 20-membered ring. (In formula (1), Ar1and Ar2each independently represent a substituted or unsubstituted aromatic ring which has a 5- to 20-membered ring and forms a condensed ring structure and two adjacent carbon atoms in formula (1). R1 represents one or more groups selected from the group consisting of a monovalent ring including a substituted or unsubstituted aromatic ring having a 5- to 60-membered ring, and a monovalent group including an aromatic heterocycle having a 5- to 20-membered ring. L is a single bond or a divalent linking group. * and ** each represent a position which bonds to a section of said compound other than the partial structure represented by formula (1). m and n each independently represent an integer from 0 to 3. However, m+n is 1 or higher.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C07D 209/08 - Indoles; Indoles hydrogénés avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés directement aux atomes de carbone de l'hétérocycle
C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
C08G 61/00 - Composés macromoléculaires obtenus par des réactions créant une liaison carbone-carbone dans la chaîne principale de la macromolécule
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japon)
Inventeur(s)
Miyazaki Yuta
Arai Takayuki
Ito Masayoshi
Negishi Hashiru
Harashima Hideyoshi
Sato Yusuke
Abrégé
A method for purifying a composition that comprises a step for dissolving the composition containing a compound represented by formula(1) [in formula (1): R1represents -N(R2)-R2(wherein R2represents a C1-C4 alkyl group); R3and R4represent a C3-C8 alkanediyl group; R5represents a hydroxyl group; R6represents -R7-OH (wherein R7represents a C4-C12 alkanediyl group) or a hydrogen atom; and n is an integer of 0 or 1] in an aqueous layer and performing liquid-liquid extraction, wherein an oil layer used in the liquid-liquid extraction contains one or more liquids selected from the group consisting of a ketone liquid, an ester liquid and an ether liquid each having a solubility parameter (SP value) of 14.8-20.5 (MPa1/2).
A61K 31/713 - Acides nucléiques ou oligonucléotides à structure en double-hélice
A61K 47/18 - Amines; Amides; Urées; Composés d’ammonium quaternaire; Acides aminés; Oligopeptides ayant jusqu’à cinq acides aminés
A61K 47/24 - Composés organiques, p.ex. hydrocarbures naturels ou synthétiques, polyoléfines, huile minérale, gelée de pétrole ou ozocérite contenant des atomes autres que des atomes de carbone, d'hydrogène, d'oxygène, d'halogènes, d'azote ou de soufre, p.ex. cyclométhicone ou phospholipides
A61K 47/34 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone, p.ex. polyesters, acides polyaminés, polysiloxanes, polyphosphazines, copolymères de polyalkylène glycol o
C07C 219/06 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes hydroxy estérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé les groupes hydroxy étant estérifiés par des acides carboxyliques ayant les groupes carboxyle estérifiants liés à des atomes d'hydrogène ou à des atomes de carbone acycliques d'un squelette carboné acyclique saturé
C07C 219/08 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes hydroxy estérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé au moins un des groupes hydroxy étant estérifié par un acide carboxylique ayant le groupe carboxyle estérifiant lié à un atome de carbone acyclique d'un squelette carboné acyclique non saturé
C07C 229/12 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant un seul groupe amino et un seul groupe carboxyle liés au squelette carboné l'atome d'azote du groupe amino étant lié de plus à des atomes de carbone acycliques ou à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons à des atomes de carbone de squelettes carbonés acycliques
C12N 15/113 - Acides nucléiques non codants modulant l'expression des gènes, p.ex. oligonucléotides anti-sens
42.
RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING SUBSTRATE, AND COMPOUND
Provided are: a radiation-sensitive resin composition that can be formed into a resist film having satisfactory levels of sensitivity and CDU performance even when a next-generation technology is applied; and a pattern formation method. The radiation-sensitive resin composition contains a compound A represented by formula (I). [Chemical 1] (In the formula, R1is a (m+m')-valent organic group and has a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both. X1is a group represented by formula (1-1) or a group represented by formula (1-2). X2is a group represented by formula (2-1) or a group represented by formula (2-2). Y+ is a monovalent onium cation. m is an integer of 1-2. m' is an integer of 0-1.) [Chemical 2] (In the formula, * represents a bond with another group.) The radiation-sensitive resin composition also contains a resin B including a structural unit having an acid-dissociable group, a radiation-sensitive acid generator other than the compound A, and a solvent.
C07C 59/11 - Composés saturés ne comportant qu'un groupe carboxyle et contenant des groupes hydroxyle ou O-métal contenant des cycles
C07C 61/04 - Composés saturés comportant un groupe carboxyle lié à un cycle à trois ou quatre chaînons
C07C 62/08 - Composés saturés contenant des groupes éther, des groupes , des groupes ou des groupes
C07C 62/24 - Composés saturés contenant des groupes cétone le groupe cétone faisant partie d'un cycle
C07C 69/34 - Esters d'acides acycliques polycarboxyliques saturés dont un groupe carboxyle estérifié est lié à un atome de carbone acyclique
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
Provided are: a radiation-sensitive resin composition that can form a resist film that exhibits satisfactory levels of sensitivity, CDU performance, pattern circularity, LWR performance, and pattern rectangularity even when forming a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), R1represents a C1-40 monovalent chain-shaped organic group. R2and R3are each a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. Rf11and RF12are each a fluorine atom or a monovalent fluorinated hydrocarbon group. R4, R5, R6, R7and R8are each a hydrogen atom, a hydroxyl group, a halogen atom, or a C1-20 monovalent organic group. Alternatively, if a plurality of R8are present, two of the plurality of R8mutually combine to form a ring structure having 5-20 ring members and configured by also two carbon atoms of the benzene ring in formula (1) to which these moieties are bonded.) (In formula (2), RBdenotes a C3-40 monovalent organic group including a ring structure. Rf21and Rf22each denote a fluorine atom or a monovalent fluorinated hydrocarbon group. Z+ is a monovalent radiation-sensitive onium cation.)
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity, LWR performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition comprises: an onium salt compound represented by formula (1); a resin containing a first structural unit having an acid-dissociating group and a second structural unit having a polycyclic lactone structure, a polycyclic sultone structure or a polycyclic carbonate structure; and a solvent. (In formula (1), R1represents a monovalent linear organic group having 1 to 40 carbon atoms; R2and R3independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; Rf11and Rf12122 independently represent an integer of 1 to 4; R4, R5, R6, R7and R8independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; when there are a plurality of R8's, two of the plurality of R81233 represents an integer of 1 to 5.)
The purpose of the present invention is to provide a production method for semiconductor substrates that makes it possible to achieve sufficient levels of sensitivity, LWR performance, and the like. According to the present invention, a production method for semiconductor substrates includes a step for directly or indirectly vapor depositing a metal or a metal compound on a substrate to form a metal-containing resist film and a step for exposing the resist film, the metal or metal compound including Au atoms, Cr atoms, Ag atoms, In atoms, or any of those.
This radiation-sensitive composition contains: a polymer having an acid dissociative group; and a compound represented by formula (1). In formula (1), R1is a monovalent group having an aromatic ring structure and 5-20 carbons. R1has an aromatic ring structure and is bonded to N-. R2represents a monovalent organic group having 1-20 carbons. Mn+ represents an n-valent cation. n represents 1 or 2.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains abrasive grains (A) and an iron(III) compound (B), wherein the nitric acid ion concentration in the chemical-mechanical polishing composition is 200 ppm or less.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains abrasive grains (A) and an iron(III) compound (B), wherein the iron(III) compound (B) is a chelate compound.
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains: abrasive grains (A); an iron(III) compound (B); and at least one type of metal atom selected from the group consisting of Al atoms, Mn atoms, and Zn atoms. The total Al, Mn, and Zn atom content is 0.1 ppm to 100 ppm, inclusive.
This method for manufacturing a polypropylene-based resin foamed particle molded article comprises: filling a forming mold with foamed particles (1) compressed by pressurized gas; and then supplying a heated medium in the forming mold to conduct in-mold molding of the foamed particles (1) in the forming mold. Each of the foamed particles (1) has a cylinder shape having a through-hole (11). The through-holes (11) have an average hole diameter d of not less than 0.1 mm but less than 1 mm. The ratio d/D of the average hole diameter d of the through-holes (11) with respect to the average outer diameter D of the foamed particles (1) is 0.4 or less. In a state where the forming mold is filled with the foamed particles (1), the compression percentage P of the foamed particles (1) is 20-80%.
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
51.
CULTURE METHOD, CULTURE PRODUCT, SPHEROID, AND METHOD FOR SCREENING FOR TEST SUBSTANCE
This culture method includes culturing a spheroid of human neural cell-like cells in the presence of a tau protein aggregate and then culturing the culture product in a culture medium containing a lipid in an amount of 5 μg/mL or more, in which the lipid comprises at least one component selected from the group consisting of a glycerolipid, a glycerophospholipid and a sphingolipid. The culture method includes culturing a spheroid of human neural cell-like cells in the presence of a tau protein aggregate and then culturing the culture product in a culture medium containing a neurotrophic factor.
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
C12N 15/12 - Gènes codant pour des protéines animales
52.
VERTEBRAL BODY ESTIMATION MODEL LEARNING DEVICE, VERTEBRAL BODY ESTIMATING DEVICE, FIXING CONDITION ESTIMATING DEVICE, VERTEBRAL BODY ESTIMATION MODEL LEARNING METHOD, VERTEBRAL BODY ESTIMATING METHOD, FIXING CONDITION ESTIMATING METHOD, AND PROGRAM
This vertebral body estimation model learning device comprises: a vertebral body estimation model executing unit for executing a vertebral body estimation model, which is a mathematical model for estimating, on the basis of image data of a vertebral body two-dimensional image being a two-dimensional image in which a vertebral body appears, positions of each vertex of the vertebral body and vectors at each vertex, the vectors being oriented from the vertices toward a center of the vertebral body, to thereby estimate the positions of the vertices of a vertebral body appearing in image data of a vertebral body two-dimensional image to be estimated, and the vectors at each vertex; and an updating unit for updating the vertebral body estimation model on the basis of the result of the estimation performed by the vertebral body estimation model executing unit.
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has excellent sensitivity, CDU performance, and storage stability, even when next-generation technology is applied. According to the present invention, a radiation-sensitive resin composition contains: a resin that includes a structural unit that is represented by formula (1) (in which R1is a hydrogen atom, a C1–5 alkyl group, or a C1–5 halogenated alkyl group, Rxis a monovalent C1–20 hydrocarbon group, n is an integer that is 0–14, and Ryis a fluorine atom, a C1–5 hydrocarbon group, or a C1–5 fluorinated hydrocarbon group, each Ry being the same or different); at least one type of salt that includes an organic acid anion portion and a cation portion; and a solvent. The salt includes a carboxylate anion in the organic acid anion portion, and at least a portion of the organic acid anion portion of the salt includes an iodine-substituted aromatic ring structure.
Polyethylene resin foam particles using a non-crosslinked linear low-density polyethylene as base resin. The density, the amount of melting heat, the melting point and the melt flow rate under the conditions of a temperature of 190°C and a load of 2.16 kg of the linear low-density polyethylene are within predetermined ranges. The average bubble diameter of the foam particles is from 50 μm to 180 μm.
Polyethylene resin foam particles using a mixed resin of virgin polyethylene (A) and recycled polyethylene (B) as base resin, and a method for producing said particles. The mixed resin contains a prescribed ratio of the virgin polyethylene (A) and the recycled polyethylene (B). The virgin polyethylene (A) is a linear low-density polyethylene (A1) having prescribed physical properties and polymerized using a metallocene polymerization catalyst. The recycled polyethylene (B) is a post-consumer material containing a linear low-density polyethylene (B1) and a low-density polyethylene (B2), the linear low-density polyethylene (B1) being the main component.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film-forming composition from which it is possible to form a resist underlayer film that has excellent solvent resistance and excellent resist pattern rectangularity; and a resist underlayer film-forming composition. The method for producing a semiconductor substrate comprises: a step for directly or indirectly applying a resist underlayer film-forming composition to a substrate; a step for applying a resist film-forming composition to a resist underlayer film that is formed in the step for applying the resist underlayer film-forming composition; a step for exposing, to radiation, a resist film that is formed in the step for applying the resist film-forming composition; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer that has a partial structure represented by formula (i), and a solvent. (In formula (i), Y1represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and an alkanediyl group. Y2represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and a single bond. Note that in the case where Y1represents an alkanediyl group, Y2represents a sulfonyl group or a carbonyl group. In the case where Y2represents a single bond, Y1represents a sulfonyl group or a carbonyl group. R1represents a monovalent organic group having 1-20 carbon atoms. X+ represents a monovalent onium cation.* represents a bond between the polymer and another structure.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
This biomimetic system includes a container and a film that contains cells similar to human cholangiocytes. The film that contains cells similar to human cholangiocytes includes a permeable substrate and two-dimensional tissue of cells similar to human cholangiocytes layered on one side of the permeable substrate. The film that contains cells similar to human cholangiocytes partitions the container into a first section and a second section; and the one side of the permeable substrate is exposed in the first section, while another side of the permeable substrate is exposed in the second section. The cells similar to human cholangiocytes express P-gp; and the efflux ratio calculated using formula (1) is at least 1.5. (1): Efflux ratio = (permeation speed of rhodamine 123 passing from the second section to the first section) / (permeation speed of rhodamine 123 passing from the first section to the second section)
C12N 5/00 - Cellules non différenciées humaines, animales ou végétales, p.ex. lignées cellulaires; Tissus; Leur culture ou conservation; Milieux de culture à cet effet
C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
Provided is a method for forming a metal-containing film, the method comprising a step for coating, on a substrate, a composition for forming a metal-containing film, and a step for heating the coated film formed by the coating step at 200-500°C, wherein: the composition for forming a metal-containing film contains a metal compound, a carbazic acid ester derivative, and a solvent; and the carbazic acid ester derivative comprises at least one compound selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). Note that R11and R21are each independently a monovalent organic group having 1-20 carbons, R12, R13, R14, and R22are each independently a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1-10 carbons, and R23 is a substituted or unsubstituted divalent aliphatic hydrocarbon group having 1-10 carbons.
C23C 18/02 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement; Dépôt par contact par décomposition thermique
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p.ex. dépôt électrolytique
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
An information processing device (10) according to the present invention comprises a storage unit (201), a reception unit (101), a condition extraction unit (102), and an output control unit (103). The storage unit (201) stores experiment condition information including a plurality of experiment conditions for performance experiments regarding a lithography material to be used in a semiconductor lithography process, the experiment condition information being stored for each performance experiment. The reception unit (101) receives an input of utilization condition information including a plurality of utilization conditions in which the lithography material is to be utilized. The condition extraction unit (102) extracts experiment condition information similar to the inputted utilization condition information from among the plurality of experiment condition information stored in the storage unit (201). The output control unit (103) outputs the extracted experiment condition information.
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
62.
METAL-CONTAINING FILM FORMATION COMPOSITION, METAL-CONTAINING FILM, METAL-CONTAINING FILM FORMATION METHOD, AND PRODUCTION METHOD OF METAL-CONTAINING FILM FORMATION COMPOSITION
Provided are: a metal-containing film formation composition from which a metal-containing film having excellent electric conductivity can be formed; a metal-containing film; a metal-containing film formation method; and a production method of a metal-containing film formation composition. This metal-containing film formation composition contains a metallic compound, a compound having an oxymethylene structure, and a solvent. The metallic compound is a metal salt or a metal complex. The compound having the oxymethylene structure generates an aldehyde structure when being degraded through heating. Metal atoms included in the metallic compound preferably belong to group 2 to group 14 and in third period to seventh period in the periodic table. The metal atoms are preferably those of copper.
C23C 18/08 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement; Dépôt par contact par décomposition thermique caractérisée par le dépôt d'un matériau métallique
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p.ex. dépôt électrolytique
63.
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that exhibits an excellent sensitivity, CDU performance, and development defect performance, even when next-generation technology is applied. The radiation-sensitive resin composition comprises a resin A that contains, inter alia, a structural unit given by formula (1) (in the formula, R1 represents a hydrogen atom, C1-C5 alkyl group, C1-C5 halogenated alkyl group, etc.); a resin B that contains a structural unit having an acid-dissociable group; one or two or more salts containing an organic acid anion moiety and a cation moiety; and a solvent. The salt contains a carboxylic acid anion in the organic acid anion moiety, and at least a portion of the organic acid anion moiety in the salt contains an iodine-substituted aromatic ring structure.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
Provided are a radiation-sensitive resin composition, a resin, a compound, and a pattern formation method with which it is possible to form a resist film that has excellent sensitivity, CDU performance, and resolution when next-generation technology is applied. A radiation-sensitive resin composition that includes: a resin including a structural unit (I) represented by formula (1); a radiation-sensitive acid generator including an organic acid anion moiety and an onium cation moiety; and a solvent. (In formula (1), Rais a hydrogen atom or a substituted or unsubstituted C1-10 monovalent hydrocarbon group. Ar1is a substituted or unsubstituted C6-20 divalent aromatic hydrocarbon group. m is 0 or 1. L1is -O-, *-COO-, a C1-20 divalent hydrocarbon group, or a combination of two or more thereof or is a single bond. *is a bond on the Ar1side. Ar2is a substituted or unsubstituted C6-20 monovalent aromatic hydrocarbon group. X is a an iodine atom or bromine atom substituting a hydrogen atom in a monovalent aromatic hydrocarbon group represented by Ar211 is an integer of 1 to (the number of hydrogen atoms in a monovalent aromatic hydrocarbon group represented by Ar2).)
[Problem] To provide a technique for suppressing deterioration of liquid permeability and pressure resistance characteristics during liquid passage of a chromatography carrier when a solvent has been substituted with an aqueous solvent that does not contain a buffering agent. [Solution] A method for filling a column with a chromatography carrier, said method comprising step 1 and step 2 below. (Step 1) A substitution step for substituting, with an aqueous solvent that does not contain a buffering agent, a slurry containing a target substance capturing chromatography carrier, a buffering agent having an acid dissociation constant (pKa) within a range of ±1.0 of the isoelectric point of the buffering agent, and an aqueous solvent, the liquid-phase pH having been adjusted to be within a range of ±2.0 of the isoelectric point of the carrier. (Step 2) A filling step for filling a column with the slurry for which the solvent substitution has been carried out in step 1
Provided is an organoid production method comprising culturing a human stem cell in a culture medium that contains a cyclic peptide having an amino acid sequence indicated by formula (1), or a pharmaceutically acceptable salt thereof. [In formula (1), X1-X6each indicate a specific modified amino acid, X7 indicates an arbitrary amino acid residue, R either does not exist or indicates a C-terminal modification group, n indicates an integer of 0 or 1, PeG indicates N-(2-phenylethyl)-glycine, and Nal1 indicates β-(1-naphthyl)-L-alanine.] [Formula 1]
C12N 5/02 - Propagation de cellules individuelles ou de cellules en suspension; Leur conservation; Milieux de culture à cet effet
C07K 7/64 - Peptides cycliques ne comportant que des liaisons peptidiques normales
C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
67.
METHOD FOR PRODUCING POLYPROPYLENE RESIN FOAM PARTICLES
To make it possible to provide a black foam-particle molded article that uses post-consumer materials of polypropylene resin foam molded articles containing carbon black and that has an exceptional appearance and properties, there is provided a method for producing polypropylene resin foam particles that include post-consumer materials of polypropylene resin foam molded articles containing carbon black. This method for producing polypropylene resin foam particles includes: a mixing step for melt-mixing polypropylene resin for which the melt flow rate at a temperature of 230°C and a load of 2.16 kg ranges from 1 g/10 min to 15 g/10 min, and recovered polypropylene resin composed of recovered post-consumer materials of polypropylene resin foam molded articles, using an extruder to obtain a mixture; an extrusion step; and a foaming step. The blend ratio of polypropylene resin in the mixture is 30-90 wt%, and the blend ratio of recovered polypropylene resin in the mixture is 10-70 wt% (where the total of the polypropylene resin and recovered polypropylene resin is 100 wt%). The recovered polypropylene resin includes carbon black. The carbon black content of the recovered polypropylene resin is 0.5-5 wt%. The melting point of the recovered polypropylene resin is 135-160°C. The melt flow rate of the recovered polypropylene resin at a temperature of 230°C and a load of 2.16 kg is greater than the melt flow rate of the polypropylene resin at a temperature of 230°C and a load of 2.16 kg, and the difference ((melt flow rate of recovered polypropylene resin)–(melt flow rate of polypropylene resin)) between the melt flow rate of the recovered polypropylene resin and the polypropylene resin ranges from 0.1 g/10 min to 12 g/10 min.
Provided are a radiation-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has excellent sensitivity and CDU performance and an excellent residual film ratio, even when next-generation technology is applied. A radiation-sensitive resin composition that contains: a resin that includes a structural unit that has a phenolic hydroxyl group and at least one structural unit from among structural units represented by formula (1) and structural units represented by formula (2); an acid diffusion control agent represented by formula (α); and a solvent (In formula (1), RTis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RXis a C1–20 monovalent hydrocarbon group.) (In formula (2), Rcis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Lcis a single bond or a divalent linking group, and Rc1, Rc2, and Rc3are each independently a C1–20 monovalent hydrocarbon group.) (In formula (α), Rwis a C1–20 monovalent organic group, a hydroxy group, or an amino group, the Rws being the same or different when there are a plurality of Rws, Lqis a divalent linking group, the Lqs being the same or different when there are a plurality of Lqs, Z+1231233 is 6.)
44 -), a hypochlorite ion (ClO-22 -) and a hypobromite ion (BrO-), or a salt thereof, and a liquid medium; if MA (% by mass) is the content of the abrasive grains (A) and MB (% by mass) is the content of the acid or a salt thereof (B), MA/MB is 0.2 to 50; and the absolute value of the zeta potential of the abrasive grains (A) in this composition for chemical mechanical polishing is 10 mV or more.
44 -), a hypochlorite ion (ClO-22 -) and a hypobromite ion (BrO-), or a salt thereof; and (D) a compound having at least one type of functional group selected from the group consisting of an amino group and salts thereof and at least one type of functional group selected from the group consisting of a carboxyl group and salts thereof. The value of MB/MD is 0.25-4, where MB (mass%) denotes the content of the acid or salt thereof (B) and MB (mass%) denotes the content of the compound (D).
The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium or molybdenum, while maintaining a stable polishing rate and suppressing corrosion of ruthenium and molybdenum. A composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains and (D) a compound which has at least one functional group that is selected from the group consisting of an amino group and salts thereof, and at least one functional group that is selected from the group consisting of a carboxy group and salts thereof; and if MA (% by mass) is the content of the abrasive grains (A) and MD (% by mass) is the content of the compound (D), MA/MD is 0.1 to 700.
A first alignment film and/or a second alignment film is a photo-alignment film on which alignment division is performed. Each pixel has a plurality of alignment regions having different alignment directions of liquid crystal molecules of a liquid crystal layer by the alignment division. The number of times of exposure in each region of the plurality of alignment regions for the alignment division is two or more and the same number among the regions; in each time of exposure for the alignment division, exposure is performed on two or more alignment regions along an arrangement direction, the previous numbers of times of exposure in alignment regions to be exposed in each times of exposure are the same among the regions; and the angle formed by the alignment direction of the liquid crystal molecules of the liquid crystal layer in each region of the plurality of alignment regions and a direction in which the polarizing axis of a polarizing plate extends is approximately 45°.
44 –), hypochlorite ions (CIO–22 –) and hypobromite ions (BrO–) or a salt of said acid; and (C) hydrogen peroxide. MB/MC = 0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).
The present invention provides: a method for forming a resist underlayer film, the method enabling the formation of a resist underlayer film that has excellent heat resistance and excellent flatness; a method for producing a semiconductor substrate; a composition for forming a resist underlayer film; and a resist underlayer film. A method for forming a resist underlayer film, the method comprising a step in which a substrate is directly or indirectly coated with a composition for forming a resist underlayer film and a heating step in which a coating film obtained by the coating step is heated at a temperature more than 450°C but not more than 600°C in an atmosphere that has an oxygen concentration of less than 0.01% by volume, wherein: the composition for forming a resist underlayer film contains a compound that has an aromatic ring, a polymer (excluding the compound that has an aromatic ring) that is thermally decomposed at least at a heating temperature in the heating step, and a solvent; the molecular weight of the compound that has an aromatic ring is 400 or more; and the content of the polymer is less than the content of the compound that has an aromatic ring in the composition for forming a resist underlayer film.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/26 - Traitement des matériaux photosensibles; Appareillages à cet effet
G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage
76.
RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD
Provided is a radiation-sensitive composition comprising a polymer having a structural unit represented by formula (1) and a photodegradable base. In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group or the like; A1represents a bivalent hydrocarbon group having 1 to 20 carbon atoms or a bivalent cyclic organic group having 6 to 20 carbon atoms and having a lactone structure, a cyclic carbonate structure or a sultone structure; X1represents -O-, -COO-, -OCO-, -O-CO-O-, -NHCO- or -CONH-; R2to R8 independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; k represents an integer of 0 to 2; m represents an integer of 1 to 10; and n represents an integer of 1 to 4.
HH of a chromatography bed including the chromatographic bed insert by at least 25% compared to a corresponding chromatography bed which does not include the chromatographic bed insert.
B01D 15/22 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à la structure de la colonne
78.
METHOD FOR PRODUCING GENE-MODIFIED T CELL POPULATION
A method for producing a gene-modified T cell population, said method comprising mixing a cell population containing T cells with particles to which a virus containing a target gene is bound and thus introducing the target gene into the cells of the cell population, wherein the T cell-containing cell population is cultured in a solution containing a CD3 signal activator that is present without being solidified.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition which is capable of forming a resist underlayer film that has excellent solvent resistance and excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a sulfonic acid ester structure.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
Provided is a composition for forming a resist underlayer film, said composition containing: a metal compound; a polymer having a first structural unit represented by formula (1) and a second structural unit represented by formula (2); and a solvent. (In formula (1), R1is a hydrogen atom or a substituted or unsubstituted C1-20 monovalent hydrocarbon group. R2is a substituted or unsubstituted C1-20 monovalent hydrocarbon group.) (In formula (2), R3is a hydrogen atom or a substituted or unsubstituted C1-20 monovalent hydrocarbon group. L is a single bond or a divalent linking group. Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted 6 to 20-membered aromatic ring. R4is a C1-10 monovalent hydroxyalkyl group or hydroxy group. n is an integer from 0 to 8. When n is 2 or more, the plurality of R4 groups are the same or different.)
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/12 - Esters des alcools ou des phénols monohydriques
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
81.
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD
The present invention provides a composition for chemical mechanical polishing, the composition enabling high-speed polishing of a silicon nitride film while restraining the speed of the silicon oxide film polishing, the composition also reducing the occurrence of dishing in the silicon oxide film that has been polished. Also provided is a polishing method. The composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains and (B) a liquid medium; the zeta potential of component (A) in the composition for chemical mechanical polishing is -10 mV or less; and the average particle diameter of component (A) in the composition for chemical mechanical polishing is 5 nm to 30 nm.
The present invention provides: a conductive substrate for battery electrodes, the conductive substrate having a metal plating layer that exhibits high adhesion; and a method for producing this conductive substrate for battery electrodes. One embodiment of the present invention provides a conductive substrate for battery electrodes, the conductive substrate comprising a base material layer and metal plating layers that are superposed on both surfaces of the base material layer, with a compound α being interposed therebetween. With respect to this conductive substrate for battery electrodes, the density of the base material layer is lower than the density of the metal plating layers; and the compound α has a first functional group that is able to be reacted with and bonded to the base material layer, and a second functional group that is able to be reacted with and bonded to the metal plating layers.
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
83.
RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND
The polymer comprising a constituent unit (I) represented by formula (1) is included in a radiation-sensitive composition. R2in formula (1) is a single bond, a divalent hydrocarbon group, or the like. R3is a divalent group represented by formula (2) or formula (3). R4is a divalent organic group. Y-is a monovalent anion that produces a sulfonic acid group, an imidic acid group, or a methide acid group as a result of light exposure. Ma+ is an a-valent cation. a is 1 or 2.
C07D 317/70 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en ortho ou en péri avec des carbocycles ou avec des systèmes carbocycliques condensés avec des systèmes cycliques contenant au moins deux cycles déterminants
C08F 12/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule double liaison carbone-carbone et l'un au moins étant terminé par un noyau carbocyclique aromatique
Provided is a radiation-sensitive resin composition which contains: a polymer having a structural unit containing an acid-dissociable group; and a compound having an anion portion and a radiation-sensitive onium cation portion. The anion portion has: an aromatic structure in which at least one hydrogen atom is substituted with a halogen atom or a halogen atom-containing group; and an anion group-containing group bonded to this aromatic structure. In the aromatic structure, the number of covalent bonds that constitute the shortest atom chain between a first atom that bonds to the halogen atom or halogen atom-containing group and a second atom that bonds to the anion group-containing group is 2 or fewer.
C07D 317/70 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en ortho ou en péri avec des carbocycles ou avec des systèmes carbocycliques condensés avec des systèmes cycliques contenant au moins deux cycles déterminants
The purpose of the present invention is to provide a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance, heat resistance, and bending resistance can be formed, and a composition. This method for manufacturing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming resist patterns directly or indirectly on the resist underlayer film formed in the application step; and a step for performing etching using the resist patterns as masks, the resist underlayer film-forming composition containing a solvent and a polymer having a repeating unit represented by formula (1). (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring. R0is a monovalent group having a 5- to 40-membered aromatic ring and has at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).) (In formulas (2-1) and (2-2), R7 each independently are a C1-20 divalent organic group or a single bond. * is a bond with a carbon atom in an aromatic ring.)
C08G 8/30 - Polycondensats modifiés chimiquement par des composés non saturés, p.ex. des terpènes
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
86.
POLYPROPYLENE RESIN FOAM PARTICLE MOLDED BODY AND METHOD FOR PRODUCING SAME
In this method, a mold is filled with cylindrical foam particles (1) having through holes and a heating medium is supplied to fuse the foam particles (1) to each other, and a foam particle molded body is produced. The foam particles (1) have a foam layer made from a polypropylene resin. The closed cell ratio of the foam particles is 90% or more. The average diameter (d) of the through holes (11) in the foam particles (1) is less than 1 mm. The ratio [d/D] of the average diameter (d) to the average outer diameter (D) of the foam particles is 0.4 or less. The open cell ratio of the foam particle molded body is 2.5-12% (inclusive).
The invention is cylindrical polypropylene resin foam particles (1) having through holes and a method for producing the same. The average diameter (d) of the through holes (11) in the foam particles (1) is less than 1 mm. The ratio d/D of the above average diameter (d) to the average outer diameter (D) of the foam particles (1) is 0.4 or less. The foam particles (1) have a foam core layer (2) and a fused layer (3). The mass ratio of the foam core layer (2) and the fused layer (3) is foam core layer:fused layer = 99.5:0.5-85:15. The flexural modulus of the polypropylene resin constituting the foam core layer 2 is 800 or more and less than 1200 MPa, and the melting point Tmc is 150°C or less.
A chromatographic device, including a housing including an inlet and an outlet of a fluid, an inlet distribution plate positioned inside the housing such that the inlet distribution plate receives a fluid flowing through the inlet and distributes the flow inside the housing, an inlet frit plate positioned on the inlet distribution plate, a chromatography medium placed inside the housing, at least one multi-planar screen positioned inside the housing to receive the fluid to be separated from the inlet distribution plate and the inlet frit plate, the multi-planar screen being structured such that the chromatography medium is held inside thereof, and that the fluid to be separated from the inlet distribution plate and the inlet frit plate passes through the chromatography medium, an outlet distribution plate that receives the fluid separated, and an outlet frit plate positioned on the outlet distribution plate such that the outlet frit plate receives a force created by the flow of the fluid through the chromatography medium.
Each one of polypropylene resin foam particles (1) according to the present invention comprises a core layer (2) and a coating layer (3) that covers the core layer (2). A base material resin (II) of the coating layer (3) is a composition (X) that is composed of a polypropylene resin (B) which has a melting point of 125°C to 150°C, carbon nanotubes (C), and a polypropylene resin (D) which has a melting point of 70°C to 100°C. The added amount of the carbon nanotubes (C) and the added amount of the polypropylene resin (D) relative to 100 parts by mass of the polypropylene resin (B) is 3 to 20 parts by mass and 6 to 120 parts by mass, respectively. The mass ratio (D)/(C) of the added amount of the polypropylene resin (D) to the added amount of the carbon nanotubes (C) is 2 to 10.
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
90.
SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
The purpose of the present invention is to provide a method for producing a semiconductor substrate that uses a resist underlayer film forming composition that can form a resist underlayer film with excellent pattern rectangularity and that has exceptional preservation stability, and to provide a resist underlayer film forming composition. The method for producing a semiconductor substrate comprises a step of directly or indirectly applying a resist underlayer film forming composition to a substrate, a step of applying a resist film forming composition to the resist underlayer film formed in the resist underlayer film forming composition application step, a step of exposing the resist film formed in the resist film forming composition application step by radiation, and a step of developing at least the exposed resist film, the resist underlayer film forming composition containing a polymer, an onium salt that generates at least one polar group selected from the group consisting of a carboxyl group and a hydroxyl group by radiation or heat, and a solvent.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
The purpose of the present invention is to provide a manufacturing method of a semiconductor substrate that uses a resist underlayer film forming composition that can form a resist underlayer film with excellent pattern rectangularity, and to provide a resist underlayer film forming composition. This semiconductor substrate manufacturing method involves a step for coating a substrate directly or indirectly with a resist underlayer film forming composition, a step for coating the resist underlayer film, formed in the resist underlayer film forming composition coating step, with a resist film forming composition, a step for exposing the resist film formed in the resist film forming composition coating step with radiation, and a step for developing at least the exposed resist layer, wherein the resist underlayer film forming composition contains a polymer, an acid generator, and a solvent, and the thickness of the resist underlayer film is less than or equal to 6 nm.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
The present invention addresses the problem of providing a photosensitive composition that, even in cases where time is needed until the next step after a coating film is exposed to light, is capable of producing a pattern having a precise configuration without producing curing defects in the coating film. A photosensitive composition according to the present invention contains a polymer (A), a polymerizable compound (B), a photoacid generator (C), and a solvent (D). The polymerizable compound (B) includes an epoxy compound (B-1) having two or more groups represented by formula (1), and a specific epoxy compound (B-2) other than the epoxy compound (B-1). An epoxy compound containing an epoxy group that is fused to a ring of an alicyclic group constitutes at least 50 mass% of 100 mass% total of the polymerizable compound (B). Formula (1): －L－Ep
Provided is a porous body (1) having, as a base resin, a crosslinked polymer (11) obtained by crosslinking a polymer of an acrylic monomer and/or a styrene monomer. The storage modulus of the porous body (1) at 23°C is 5-2000 kPa. The apparent density of the porous body (1) ranges from 10 kg/m3to 250 kg/m3. The glass transition temperature of the crosslinked polymer (11) is −30°C or higher. The molecular weight between crosslinking points of the crosslinked polymer (11) is 1.0×104 or greater. The porous body (1) is obtained by polymerizing a monomer in a water-in-oil-type high-internal-phase emulsion in which a high proportion of an aqueous phase is included in an organic phase.
C08F 20/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 2/32 - Polymérisation dans des émulsions eau-dans-l'huile
The present invention relates to a core material for use in a multilayered object including the core material and a layer of polyurethane foam disposed thereon. This core material improves the dimensional stability of the multilayered object being produced and can be easily separated from the polyurethane foam when the multilayered object is disassembled. The core material (100C) comprises a molded object (100) composed of expanded thermoplastic-resin particles and is to be used in producing a multilayered object by disposing a layer of polyurethane foam thereon. This core material (100C) is the expanded-particle molded object (100) constituted by mutually fused-bonded expanded particles (20) having through-holes (22) and has been configured so that the expanded-particle molded object (100) has an average porosity of 10-25% and that in the surface of the expanded-particle molded object (100), the proportion of the total area of the openings of the through-hole portions (14) of the expanded particles (20) to the area of the surface of the expanded-particle molded object (100) is 2-5%, the through-hole portions (14) of the expanded particles (20) have an average opening area of 5 mm2to 20 mm2, and the proportion of the total number of through-hole portions (14) each having an opening area of 2 mm2 or larger of the expanded particles (20) to the total number of all the through-hole portions (14) is 60% or less.
A47C 27/15 - Matelas à ressort, rembourrés ou à fluide spécialement adaptés pour chaises, fauteuils, lits ou canapés garnis d'un matériau mousse formé de plusieurs couches
B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
B32B 5/32 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses les deux couches étant sous forme de mousse ou essentiellement poreuses
B60N 2/90 - Sièges spécialement adaptés aux véhicules; Agencement ou montage des sièges dans les véhicules - Détails ou éléments non prévus ailleurs
95.
METHOD FOR PRODUCING POLYAMIDE RESIN FOAM PARTICLES
A method for producing polyamide resin foam particles by using a physical foaming agent to foam polyamide resin particles, wherein: the polyamide resin particles contain a color pigment and a C12-24 higher fatty acid metal salt; the metal in the higher fatty acid metal salt is one or more metals selected from among magnesium, aluminum, and zinc; and the amount of the higher fatty acid metal salt contained in the polyamide resin particles is 500-5,000 ppm by mass.
The purpose of the present invention is to provide: a method for producing a semiconductor substrate that has excellent pattern rectangularity; and a composition for forming a resist underlayer film. A method for producing a semiconductor substrate, the method comprising: a step in which a composition for forming a resist underlayer film is directly or indirectly applied to a substrate; a step in which a metal-containing resist film is formed on a resist underlayer film that is formed by the above-described step for applying a composition for forming a resist underlayer film; a step in which the metal-containing resist film is exposed to light; and a step in which a resist pattern is formed by volatilizing a part of the light-exposed metal-containing resist film.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
One embodiment of the present invention relates to a polymer, a composition, a cured product, a multilayer body or an electronic component; and the polymer has a repeating structural unit that is represented by formula (1), while having a group Y that is represented by formula (a) at an end. In the formula (1), each X independently represents -O-, -S- or -N(R3)-; R3represents a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group that is obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one atom that is selected from among an oxygen atom and a sulfur atom; R1represents a divalent organic group; and R2 represents a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring. (a): -Y In the formula (a), Y represents a group that contains an ethylenically unsaturated double bond, while having 3 to 50 carbon atoms, an unsubstituted or substituted aromatic hydrocarbon group having 6 to 50 carbon atoms, an unsubstituted or substituted aliphatic hydrocarbon group having 6 to 50 carbon atoms, or an unsubstituted nitrogen-containing heteroaromatic ring. In cases where the aromatic hydrocarbon group or the aliphatic hydrocarbon group has a substituent, the substituent is a group other than a hydroxy group.
B32B 27/00 - Produits stratifiés composés essentiellement de résine synthétique
C08F 299/02 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
C08L 71/00 - Compositions contenant des polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principale; Compositions contenant des dérivés de tels polymères
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques
98.
RADIATION-SENSITIVE COMPOSITION FOR INSULATION FILM FORMATION USE, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT BOARD
A radiation-sensitive composition for insulation film formation use, which comprises at least one polyfunctional compound (A) selected from a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2), a polymer (B) having a group Y that is capable of reacting with the maleimide group in the polyfunctional maleimide compound (A-1) or the styryl group in the polyfunctional styryl compound (A-2), and a photopolymerization initiator (C), in which the polymer (B) has a specific repeating structural unit, and the group Y is represented by formula (Y1).
B32B 27/00 - Produits stratifiés composés essentiellement de résine synthétique
C08F 299/02 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés
C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
C08L 71/00 - Compositions contenant des polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principale; Compositions contenant des dérivés de tels polymères
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques
The present invention aims to provide: a production method for a semiconductor substrate that has excellent pattern rectangularity; and a composition for forming a resist underlayer film. The semiconductor substrate production method comprises: a step in which a resist underlayer film-forming composition is directly or indirectly applied to the substrate; a step in which a metal-containing resist film is formed on the resist underlayer film formed in the resist underlayer film-forming composition coating step; a step in which the metal-containing resist film is exposed; a step in which a developing solution is prepared; and a step in which an exposed section of the exposed metal-containing resist film is dissolved by the developing solution to form a resist pattern.
C07C 271/02 - Acides carbamiques; Sels d'acides carbamiques
C07C 309/06 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'halogène ou des groupes nitro ou nitroso liés au squelette carboné
C07C 309/19 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné saturé contenant des cycles
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
The objective of the present invention is to provide a chromatographic carrier having excellent liquid permeability and excellent pressure resistance characteristics during liquid passage. This method for producing a chromatographic carrier includes the following step 1 and step 2, wherein a solid phase support prepared in step 1 comprises porous particles to which ligands are not fixed, or porous particles to which ligands are fixed. (Step 1) A step of preparing a solid phase support (Step 2) A step of performing an adjustment by sieving and classifying the solid phase support such that the coefficient of variation of a volume-based particle size distribution of the porous particles when ligands are fixed thereto is at least equal to 1% and at most equal to 22%, and the degree of skew of the volume-based particle size distribution of the porous particles when ligands are fixed thereto is at least equal to -0.1 and at most equal to 5
B01D 15/38 - Adsorption sélective, p.ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction spécifique non couverte par un ou plusieurs des groupes , p.ex. chromatographie d'affinité, chromatographie d'échange par ligand ou chromatographie chirale
B01J 20/281 - Absorbants ou adsorbants spécialement adaptés pour la chromatographie préparative, analytique ou de recherche
B01J 20/285 - Absorbants ou adsorbants poreux à base de polymères
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