JSR Corporation

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Propriétaire / Filiale
[Owner] JSR Corporation 1 670
JSR Micro Inc. 15
Japan Fine Coatings Co. Ltd. 4
Date
Nouveautés (dernières 4 semaines) 12
2024 juillet (MACJ) 6
2024 juin 10
2024 mai 5
2024 avril 8
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Classe IPC
G03F 7/004 - Matériaux photosensibles 305
G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons 298
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou 237
G03F 7/20 - Exposition; Appareillages à cet effet 188
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage 126
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1.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND

      
Numéro d'application JP2023042975
Numéro de publication 2024/150553
Statut Délivré - en vigueur
Date de dépôt 2023-11-30
Date de publication 2024-07-18
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori Katsuaki
  • Ohtagaki Yasuhiro

Abrégé

Provided is a radiation-sensitive composition having excellent sensitivity, CDU and preservation stability. The radiation-sensitive composition comprises: a polymer, the solubility of which in a developing solution changes due to the action of an acid; an anion represented by formula (1); and a radiation-sensitive onium cation which includes an aromatic ring that has at least one hydrogen atom substituted with a fluorine atom or a fluorine atom-containing group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 69/36 - Esters d'acide oxalique
  • C07C 381/12 - Composés sulfonium
  • C07D 317/64 - Atomes d'oxygène
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

2.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2023041890
Numéro de publication 2024/142681
Statut Délivré - en vigueur
Date de dépôt 2023-11-21
Date de publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori Katsuaki
  • Omiya Takuya
  • Shiratani Motohiro
  • Hachiya Asuka

Abrégé

This radiation-sensitive composition contains: a polymer which has a first structural unit containing a partial structure in which a hydrogen atom of a carboxy group or a phenolic hydroxyl group is substituted with an acid dissociation group represented by formula (1); and a compound which has an anion section including one anion group and an aromatic ring in which one or more hydrogen atoms are substituted with an iodine atom, and also has a radiation-sensitive onium cation section.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

3.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, COMPOSITION, AND POLYMER

      
Numéro d'application JP2023044550
Numéro de publication 2024/142925
Statut Délivré - en vigueur
Date de dépôt 2023-12-13
Date de publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada,shuhei
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Katagiri,takashi
  • Abe,shinya

Abrégé

Provided are: a semiconductor substrate production method using a composition which is capable of forming a film that has excellent heat resistance and bending resistance; the composition; and a polymer. This semiconductor substrate production method comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on a resist underlayer film formed in the application step; and a step for performing etching using the resist pattern as a mask, the resist underlayer film-forming composition containing a solvent and a polymer having a repeating unit represented by formula (1). [Formula 1] (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring structure. Z is a divalent group having an alicyclic structure with 3 to 20 carbons. Either Ar1and/or Z includes at least one group having at least one group selected from the group consisting of a group represented by formula (2-1) and a group represented by formula (2-2).) [Formula 2] (In formulae (2-1) and (2-2), R7 is, independently, a single bond or a divalent organic group with 1 to 20 carbons, and * is a bond with another structure in the polymer.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

4.

POLYPROPYLENE-BASED RESIN FOAM PARTICLE, AND POLYPROPYLENE-BASED RESIN FOAM PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2023046466
Numéro de publication 2024/143286
Statut Délivré - en vigueur
Date de dépôt 2023-12-25
Date de publication 2024-07-04
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Masumoto Hisashi

Abrégé

Provided are: a polypropylene-based resin foam particle which contains a biomass-derived polypropylene-based resin and can provide a superior polypropylene-based resin foam particle molded article; and a polypropylene-based resin foam particle molded article which is produced using the polypropylene-based resin foam particle. In the polypropylene-based resin foam particle, a base resin for the foam particle comprises a biomass-derived polypropylene-based resin A having a biomass-derived monomer component in a molecule chain thereof and a fossil fuel-derived polypropylene-based resin B, in which the base resin comprises 3% by weight to 60% by weight inclusive of the biomass-derived polypropylene-based resin A and 40% by weight to 97% by weight inclusive of the fossil fuel-derived polypropylene-based resin B (in which the total of the amounts of both of the components is 100% by weight). The foam particle molded article is formed by molding the polypropylene-based resin foam particle in a mold.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08L 23/10 - Homopolymères ou copolymères du propylène

5.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023037498
Numéro de publication 2024/142556
Statut Délivré - en vigueur
Date de dépôt 2023-10-17
Date de publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

Provided are: a radiation-sensitive resin composition which can be formed into a resist film capable of providing satisfactory levels of sensitivity and CDU performance when a next-generation technology is applied; and a pattern formation method. This radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit (I) and a structural unit (II), wherein the structural unit (I) has an acid dissociable group, the structural unit (II) has an organic acid anionic moiety and an onium cationic moiety, and each of the acid dissociable group and the organic acid anionic moiety has an iodine-substituted aromatic ring structure; and a solvent.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

6.

EXPANDED PARTICLES OF POLYPROPYLENE-BASED RESIN, METHOD FOR PRODUCING SAME, AND MOLDED OBJECT FORMED FROM EXPANDED PARTICLES OF POLYPROPYLENE-BASED RESIN

      
Numéro d'application JP2023043154
Numéro de publication 2024/142761
Statut Délivré - en vigueur
Date de dépôt 2023-12-01
Date de publication 2024-07-04
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Ito Yosuke
  • Chiba Takuya

Abrégé

Expanded particles of a polypropylene-based resin, which contain an inorganic phosphinic acid salt and a melamine-compound flame retardant. In the expanded particles, the amount of the inorganic phosphinic acid salt incorporated therein is 0.5 mass% or more, the amount of the melamine-compound flame retardant incorporated therein is 0.05 mass% or more, and the sum of the amount of the inorganic phosphinic acid salt incorporated therein and the amount of the melamine-compound flame retardant incorporated therein is 5 mass% or less. The expanded particles further contain a first antioxidant which comprises a phenolic antioxidant and a second antioxidant which comprises a phosphorus-compound antioxidant and/or a sulfur-compound antioxidant. In the expanded particles, the sum of the amount of the first antioxidant incorporated therein and the amount of the second antioxidant incorporated therein is 0.05-0.6 mass%, and the ratio of the amount of the second antioxidant incorporated therein to the amount of the first antioxidant incorporated therein is 0.5-10.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

7.

COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application JP2023043257
Numéro de publication 2024/135316
Statut Délivré - en vigueur
Date de dépôt 2023-12-04
Date de publication 2024-06-27
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Suzuki,ayaka
  • Nii,akitaka
  • Kasai,tatsuya

Abrégé

The purpose of the present invention is to provide: a composition which can form a silicon-containing film with which it is possible to suppress resist pattern collapsing and improve film removability; and a method for producing a semiconductor substrate. Provided is a composition which comprises: a compound having at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2) (in which, when the compound has a structural unit represented by formula (1-1), the compound has at least one structural unit selected from the group consisting of a structural unit represented by formula (1-2) and a structural unit represented by formula (2-1)); and a solvent. (In formula (1-1), X represents a monovalent organic group having 2 to 20 carbon atoms and having a heteroaromatic ring; a represents an integer of 1 to 3; when a is 2 or more, a plurality of X's are the same as or different from each other; Y represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom; b represents an integer of 0 to 2; when b is 2, the two Y's are the same as or different from each other; and a+b is 3 or less. In formula (1-2), X represents a monovalent organic group having 2 to 20 carbon atoms and having a heteroaromatc ring; c represents an integer of 1 to 3; when c is 2 or more, a plurality of X's are the same as or different from each other; Y represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom; d represents an integer of 0 to 2; when d is 2, the two Y's are the same as or different from each other; R0represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 20 carbon atoms and bound to two silicon atoms; p represents an integer of 1 to 3; when p is 2 or more, a plurality of R0's are the same as or different from each other; and c+d+p is 4 or less.) (In formula (2-1), R1represents a monovalent organic group having 1 to 20 carbon atoms (excluding a heteroaromatic ring), a hydroxy group, a hydrogen atom or a halogen atom; h represents 1 or 2; when h is 2, the two R1's are the same as or different from each other; R2represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 20 carbon atoms and bound to two silicon atoms; q represents an integer of 1 to 3; when q is 2 or more, a plurality of R2's are the same as or different from each other; and h+q is 4 or less.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
  • C08L 83/14 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions contenant des dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité sont liés autrement que par des atomes d'oxygène
  • G03F 7/20 - Exposition; Appareillages à cet effet

8.

POLYETHYLENE RESIN FOAM PARTICLE MOLDED BODY AND METHOD FOR PRODUCING SAME

      
Numéro d'application JP2023044061
Numéro de publication 2024/135414
Statut Délivré - en vigueur
Date de dépôt 2023-12-08
Date de publication 2024-06-27
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Tsuda Yuji
  • Ohta Hajime

Abrégé

The present invention provides a method for producing a foam particle molded body, wherein a mold is filled with cylindrical foam particles (1) having through holes, and a heating medium is supplied to fusion bond the foam particles (1) to each other, thereby producing a foam particle molded body. The foam particles (1) each have a foam layer that is configured from a polyethylene resin. The closed cell ratio of the foam particles (1) is 80% or more. The average diameter (d) of the through holes (11) in the foam particles (1) is less than 1 mm. The ratio (d/D) of the average diameter (d) to the average outer diameter (D) of the foam particles is 0.4 or less. The open cell ratio of the foam particle molded body is 8% to 20%.

Classes IPC  ?

  • C08J 9/228 - Façonnage d'articles en mousse
  • C08J 9/16 - Fabrication de particules expansibles

9.

CHROMATOGRAPHY APPARATUS, SLURRY FILLING METHOD, AND CHROMATOGRAPHY SYSTEM

      
Numéro d'application JP2023037676
Numéro de publication 2024/127801
Statut Délivré - en vigueur
Date de dépôt 2023-10-18
Date de publication 2024-06-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Mizuguchi Yusaku
  • Stroehlein, Guido
  • Pearl, Steven R.

Abrégé

[Problem] To provide: a chromatography apparatus and chromatography system that present a uniform chromatography medium and have a robust bed; and a slurry filling method that fills a slurry into said chromatography apparatus. [Solution] The chromatography apparatus has: a housing that contains a fluid inlet and a fluid outlet and has a plurality of side walls that face each other; an inflow frit plate that is disposed within the housing and is configured so as to distribute the flow of a fluid; a chromatography medium that is supported by the housing and is configured to receive, from the inflow frit plate, a fluid to be partitioned; and an outflow frit plate that is disposed within the housing and is configured to receive a fluid that has passed through the chromatography medium. The inlet frit plate, the outflow frit plate, and the plurality of side walls surround the chromatography medium so as to retain the chromatography medium in a prescribed position, and the individual side walls have slurry introduction holes having an opening area that is 0.1% to 10.0% of the area of the single side wall.

Classes IPC  ?

  • B01J 20/281 - Absorbants ou adsorbants spécialement adaptés pour la chromatographie préparative, analytique ou de recherche
  • G01N 30/60 - Préparation de la colonne

10.

COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING METAL COMPOUND

      
Numéro d'application JP2023042920
Numéro de publication 2024/128013
Statut Délivré - en vigueur
Date de dépôt 2023-11-30
Date de publication 2024-06-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hirasawa,kengo
  • Serizawa,ryuichi
  • Ozaki,yuki

Abrégé

The present invention provides: a composition for forming a resist underlayer film, the composition having excellent embeddability, while enabling the peripheral edge of a substrate to have good cleansing properties after the formation of a film; a method for producing a semiconductor substrate; a method for forming a resist underlayer film; and a method for producing a metal compound. This composition for forming a resist underlayer film contains a metal compound and a solvent, the metal compound contains a reaction product of a metal amide compound and a carboxylic acid, and a metal atom contained in the metal compound is at least one that is selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, aluminum, gallium, indium, germanium, tin and antimony.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

11.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2023037922
Numéro de publication 2024/127808
Statut Délivré - en vigueur
Date de dépôt 2023-10-19
Date de publication 2024-06-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya, Takuya
  • Ito, Ryo
  • Nakagawa, Atsushi
  • Matsumura, Yuushi
  • Nishikori, Katsuaki

Abrégé

This radiation-sensitive composition contains: (A) a polymer having a structural unit represented by formula (1); and (B) an onium salt compound which is formed of an organic anion and a cation, in which the organic anion, the cation, or both thereof have an iodo group, and which generates an acid when being irradiated with radiation. In the formula, B1represents a single bond or a divalent organic group that has at least one carbon atom and that binds to E+at the carbon atom. E+represents a divalent group having an ammonium cation structure or a phosphonium cation structure. B2represents a divalent organic group that has at least one carbon atom and that binds to both E+and D-by the same carbon atom or by different carbon atoms. D- represents a monovalent group having an anion structure.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

12.

METHOD FOR PRODUCING POLYETHYLENE RESIN FOAM SHEET, AND POLYETHYLENE RESIN FOAM SHEET

      
Numéro d'application JP2023044709
Numéro de publication 2024/128267
Statut Délivré - en vigueur
Date de dépôt 2023-12-13
Date de publication 2024-06-20
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Kayanoki Yusuke
  • Katsuyama Naoya
  • Kakuta Hirotoshi

Abrégé

The present invention provides: a method for producing a polyethylene resin foam sheet, the method being capable of producing a good polyethylene resin foam sheet without using an inorganic material or a chemical foaming agent; and a polyethylene resin foam sheet. The present invention relates to a method for producing a polyethylene resin foam sheet by subjecting an expandable resin melt that contains a polyethylene resin and a physical foaming agent to extrusion foaming, wherein: a first means uses, as the physical foaming agent, nitrogen and at least one organic physical foaming agent that is selected from among hydrocarbons having 3 to 5 carbon atoms and dialkyl ethers having an alkyl group with 1 to 3 carbon atoms; the sum (A + B) of the addition amount A of the organic physical foaming agent and the addition amount B of the nitrogen is 0.5 mol to 5 mol per 1 kg of the resin component: the addition amount B of the nitrogen is 0.1 mol to 0.4 mol per 1 kg of the resin component; and the addition amounts are adjusted so that the ratio (A/B) of the addition amount A of the organic physical foaming agent to the addition amount B of the nitrogen is 2 to 18. In addition, a polyethylene resin foam sheet according to the present invention has a density of 20 kg/m3to 100 kg/m3 and an average number of cells in the thickness direction of 0.5 per mm to 5 per mm, the ash content of this foam sheet is less than 0.1% by mass (including 0), and the ratio of sodium in the ash content is 10% by mass or less (including 0).

Classes IPC  ?

  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage

13.

PHOTOSENSITIVE RESIN COMPOSITION, RESIN FILM HAVING PATTERN, PRODUCTION METHOD FOR SAME, AND SEMICONDUCTOR CIRCUIT BOARD

      
Numéro d'application JP2023043471
Numéro de publication 2024/122542
Statut Délivré - en vigueur
Date de dépôt 2023-12-05
Date de publication 2024-06-13
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tatara Ryoji
  • Nakafuji Shin-Ya
  • Sakuma Tetsuya
  • Okuda Ryuichi
  • Doi Takashi
  • Ooto Junichi
  • Kato Takahiro

Abrégé

One aspect of the present invention relates to a photosensitive resin composition, said photosensitive resin composition comprising: (A) an alkali-soluble polymer, (B) a photosensitizer; (C) a crosslinkable compound having a crosslinkable group that, with heat, reacts with the following component (D); (D) a compound represented by general formula (1); and (E) a solvent. [In general formula (1), X11represents a nitrogen atom or the like, R11represents a hydrogen atom or a group represented by general formula (2) (in general formula (2), L21represents a single bond or the like, R21represents a hydrogen atom or the like, R22represents a monovalent organic group, and n21to n23represent integers of 0 or greater), at least one of the three R11is a group represented by general formula (2), and in at least one group represented by general formula (2), n21is an integer of 1 or greater, and at least one R21 is a hydrogen atom.]

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 12/22 - Oxygène
  • C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • C08G 73/22 - Polybenzoxazoles
  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants

14.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Numéro d'application JP2023034686
Numéro de publication 2024/116575
Statut Délivré - en vigueur
Date de dépôt 2023-09-25
Date de publication 2024-06-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Inami,hajime
  • Otsuka,noboru

Abrégé

Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when a resist pattern having a high aspect ratio is formed; a pattern formation method; and a radiation-sensitive acid generator. The radiation-sensitive resin composition contains an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1, R2and R3are each independently a monovalent chain organic group having 1-10 carbon atoms. R4, R5, and R6are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. When there are a plurality of R4, R5, and R6, the plurality of R4, R5, and R6are the same as or different from each other. Rf1is a fluorine atom or a monovalent fluorinated hydrocarbon group. When there are a plurality of Rf1, the plurality of Rf1122 is an integer of 1-4. Z+ is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

15.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID-GENERATING AGENT

      
Numéro d'application JP2023034692
Numéro de publication 2024/116576
Statut Délivré - en vigueur
Date de dépôt 2023-09-25
Date de publication 2024-06-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Inami,hajime
  • Otsuka,noboru

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed in formation of a resist pattern having a high aspect ratio; a pattern formation method; and a radiation-sensitive acid-generating agent. This radiation-sensitive resin composition contains: an onium salt compound (1) expressed by formula (1); an onium salt compound (2) that is different from the aforementioned onium salt compound (1); a resin that includes structural units having acid-dissociable groups; and a solvent. (In formula (1), W represents a C1-40 monovalent chain-form organic group, a C5 or lower monovalent cyclic organic group, or a monovalent group obtained by combining a C1-40 monovalent chain-form organic group and a C5 or lower monovalent cyclic organic group. R1and R2each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. In cases in which a plurality of R1and R2are present, the plurality of Rf1and Rf2may be the same as, or different from, each other. R3, R4, and R511 is an integer of 1 to 8. Z+ is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

16.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Numéro d'application JP2023034717
Numéro de publication 2024/116577
Statut Délivré - en vigueur
Date de dépôt 2023-09-25
Date de publication 2024-06-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Inami,hajime
  • Otsuka,noboru

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; a pattern formation method; and a radiation-sensitive acid generator. This radiation-sensitive resin composition comprises: an onium salt compound represented by formula (1); a resin containing a structural unit (I) represented by formula (2); and a solvent. (In formula (1), R1, R2and R3each independently represent a monovalent organic group having 1 to 10 carbon atoms, or two or three of R1, R2and R3are combined with each other to form, together with a carbon atoms to which these residues are bound, a monovalent or bivalent group containing a cyclic structure having 3 to 20 carbon atoms, in which when two of R1, R2and R3form the above-mentioned cyclic structure, the remaining one is an organic group having 1 to 10 carbon atoms; R4and R5each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group, in which when there are a plurality of R4's and R5's, the plurality of R4's and R5's are the same as or different from each other; R6, R7and R811 represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R9represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; and R10 represents a monovalent group containing at least one structure selected from the group consisting of a lactone structure, a cyclic polycarbonate structure and a sultone structure.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • C09K 3/00 - Substances non couvertes ailleurs

17.

PROTEIN COLLECTION DETERMINATION SYSTEM, PROTEIN COLLECTION DETERMINATION METHOD, AND RECORDING MEDIUM

      
Numéro d'application JP2023041605
Numéro de publication 2024/111540
Statut Délivré - en vigueur
Date de dépôt 2023-11-20
Date de publication 2024-05-30
Propriétaire
  • JSR CORPORATION (Japon)
  • MEDICAL & BIOLOGICAL LABORATORIES CO., LTD. (Japon)
Inventeur(s) Suemasa Daichi

Abrégé

This protein collection determination system comprises: a first determination unit that uses first image data obtained by capturing a time series of images of a culture of a cell population infected with a virus as first input data and determines, as first output data, whether a cell population infected with a virus is in a suitable state for collecting a protein; and an acquisition unit that acquires image data obtained by capturing a time series of images of the inside of a culture container. The first determination unit performs determination by means of a first model, and the first model is a trained model obtained by performing deep learning of a first neural network using the actual values of the first input data and the actual values of the first output data as first teacher data.

Classes IPC  ?

  • C12M 1/34 - Mesure ou test par des moyens de mesure ou de détection des conditions du milieu, p.ex. par des compteurs de colonies
  • C12N 5/10 - Cellules modifiées par l'introduction de matériel génétique étranger, p.ex. cellules transformées par des virus
  • G06T 7/00 - Analyse d'image
  • G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
  • G06V 20/69 - Objets microscopiques, p.ex. cellules biologiques ou pièces cellulaires

18.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023030940
Numéro de publication 2024/105962
Statut Délivré - en vigueur
Date de dépôt 2023-08-28
Date de publication 2024-05-23
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Shiratani,motohiro

Abrégé

Provided are: a radioactive-ray-sensitive resin composition which makes it possible to form a resist film having satisfactory storage stability and also having excellent sensitivity and LWR performance even when a next-generation technology is applied; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises: a radioactive-ray-sensitive onium salt having a cation moiety containing a fluorine atom; a carboxylic acid having a standard boiling point of 90°C to 220°C and having no aromatic ring, or an alcohol having a standard boiling point of 60°C or lower, or both of the carboxylic acid and the alcohol; a resin containing a structural unit having an acid-dissociable group; and a solvent.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

19.

RADIATION SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023035159
Numéro de publication 2024/106020
Statut Délivré - en vigueur
Date de dépôt 2023-09-27
Date de publication 2024-05-23
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori,katsuaki
  • Kobayashi,atsushi
  • Hachiya,asuka
  • Shiratani,motohiro
  • Nemoto,ryuichi

Abrégé

Provided are a radiation sensitive resin composition and a pattern formation method that can form a resist film that has excellent preservation stability and has excellent CDU performance and sensitivity when applied to a next-generation technology. This radiation sensitive resin composition comprises: a radiation sensitive onium salt (A) represented by formula (1) (in the formula (1), Rp1pp11 +represents a monovalent radiation sensitive onium cation); a radiation sensitive onium salt (B) that is different from the radiation sensitive onium salt (A) and that is represented by formula (2) (in the formula (2), Rp222 +11 +22 + is a cation including a fluorine atom.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

20.

CURABLE COMPOSITION FOR ORGANIC EL ELEMENTS, CURED PRODUCT FOR ORGANIC EL ELEMENTS AND METHOD FOR PRODUCING SAME, ORGANIC EL ELEMENT, AND POLYMER

      
Numéro d'application JP2023040331
Numéro de publication 2024/101411
Statut Délivré - en vigueur
Date de dépôt 2023-11-09
Date de publication 2024-05-16
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Murakami, Yoshitaka
  • Kamiya, Ikuyo

Abrégé

Disclosed is a curable composition for organic EL elements, the curable composition containing (A) a polymer that comprises a structural unit derived from a compound having an acidic group, and (B) a photosensitive compound, wherein: the polymer (A) comprises a structural unit (I) that is derived from an aromatic vinyl compound and a structural unit (II) that is derived from a maleimide compound, while containing, as the compound having an acidic group, at least one compound that is selected from the group consisting of an aromatic vinyl compound and a maleimide compound; and the ratio of the sum of the structural unit (I) and the structural unit (II) in the polymer (A) is 70% by mole or more relative to all structural units in the polymer (A).

Classes IPC  ?

  • H10K 50/84 - Passivation; Conteneurs; Encapsulations
  • C08F 212/02 - Monomères contenant un seul radical aliphatique non saturé
  • C08F 222/40 - Imides, p.ex. imides cycliques
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
  • H10K 59/173 - Affichages à OLED à matrice passive comprenant des bords ou des masques d'ombre
  • H10K 85/10 - Polymères ou oligomères organiques

21.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023032340
Numéro de publication 2024/090041
Statut Délivré - en vigueur
Date de dépôt 2023-09-05
Date de publication 2024-05-02
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Shiratani,motohiro
  • Hachiya,asuka

Abrégé

Provided are a radioactive-ray-sensitive resin composition and a pattern formation method that make it possible to form a resist film that has satisfactory storage stability, and also has excellent sensitivity and LWR performance when next-generation technology is applied. The radioactive-ray-sensitive resin composition comprises at least one onium salt having an organic acid anion moiety and an onium cation moiety, a resin containing a structural unit having an acid dissociable group, and a solvent, in which at least a part of the onium cation moiety in the onium salt is a fluorinated onium cation moiety containing a fluorine atom, and at least a part of the organic acid anion moiety in the onium salt is an organic acid anion moiety (1) represented by formula (1). (In formula (1), R1represents an organic group having a valency of (q2+1) or, when there are a plurality of R1's, two of the R1's are bonded to each other to form a 5- to 20-membered cyclic structure in conjunction with a carbon atom bonded to them and located on a benzene ring in formula (1); R2represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, a cyano group, a nitro group or an amino group; q1 represents an integer of 1 to 4; when q1 is 2 or more, a plurality of R1's are the same as or different from each other; when q1 is 1, q2 represents an integer of 1 to 4; when q1 is 2 or more, a plurality of q2's each independently represent an integer of 0 to 4, in which at least one of q2's is 1 or more; q3 represents an integer of 0 to 3; when q3 is 2 or more, a plurality of R2's are same as or different from each other; and q1 and q3 satisfy the formula q1+q3 ≤ 4.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 65/105 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes hydroxyle ou O-métal polycycliques
  • C07C 65/24 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes polycycliques
  • C07C 65/28 - Composés comportant des groupes carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons et contenant l'un des groupes OH, O-métal, —CHO, cétone, éther, des groupes , des groupes ou des groupes contenant des groupes éther, des groupes , des groupes ou des groupes avec des insaturations autres que celles des cycles aromatiques
  • C07C 233/87 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des groupes carboxyle avec le radical hydrocarboné substitué lié à l'atome d'azote du groupe carboxamide par un atome de carbone acyclique d'un squelette carboné contenant des cycles aromatiques à six chaînons
  • C07C 381/12 - Composés sulfonium
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

22.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Numéro d'application JP2023036847
Numéro de publication 2024/085030
Statut Délivré - en vigueur
Date de dépôt 2023-10-11
Date de publication 2024-04-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Katagiri,takashi
  • Abe,shinya
  • Naganawa,atsuko

Abrégé

The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a composition which is capable of forming a film that has excellent bending resistance and excellent solubility during liquid discharging; and a composition. The present invention provides a method for producing a semiconductor substrate, the method comprising a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is directly or indirectly formed on the resist underlayer film that has been formed by the application step, and a step in which etching is performed using the resist pattern as a mask, wherein: the resist underlayer film forming composition contains a solvent and a compound having a nitro group; the compound having a nitro group is a polymer having a repeating unit that comprises a nitro group and an aromatic ring, an aromatic ring-containing compound having a nitro group and a molecular weight of 600 to 3,000, or a combination thereof; the content ratio of the compound having a nitro group in the components of the resist underlayer film forming composition excluding the solvent is 10% by mass or more.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

23.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Numéro d'application JP2023036474
Numéro de publication 2024/084993
Statut Délivré - en vigueur
Date de dépôt 2023-10-06
Date de publication 2024-04-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Maruyama Ken
  • Nishikori Katsuaki
  • Kiriyama Kazuya

Abrégé

A radiation-sensitive composition comprising a polymer having: a side chain including an acid-dissociable group; and a side chain including one or more radiation-sensitive onium cation structures and two or more iodo groups.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/10 - Esters
  • G03F 7/20 - Exposition; Appareillages à cet effet

24.

ANTIBODY AND USE THEREOF

      
Numéro d'application JP2023036979
Numéro de publication 2024/080325
Statut Délivré - en vigueur
Date de dépôt 2023-10-12
Date de publication 2024-04-18
Propriétaire
  • JSR CORPORATION (Japon)
  • KYOTO UNIVERSITY (Japon)
Inventeur(s)
  • Ishikawa Hidefumi
  • Kanahara Masaaki
  • Mizuuchi Motoaki
  • Yamaguchi Tetsuji
  • Matsuzawa Shuichi

Abrégé

HLL region) contain respectively the amino acid sequences represented by SEQ ID NOS: 4-6, or a fragment of the antibody.

Classes IPC  ?

  • C07K 16/40 - Immunoglobulines, p.ex. anticorps monoclonaux ou polyclonaux contre des enzymes
  • A61K 39/395 - Anticorps; Immunoglobulines; Immunsérum, p.ex. sérum antilymphocitaire
  • A61P 35/00 - Agents anticancéreux

25.

POLYPROPYLENE-BASED RESIN FOAMED PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application JP2023036097
Numéro de publication 2024/075742
Statut Délivré - en vigueur
Date de dépôt 2023-10-03
Date de publication 2024-04-11
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Kitahara Taizo
  • Chiba Takuya

Abrégé

Polypropylene-based resin foamed particles (1) each include a foamed layer formed of a polypropylene-based resin composition. The polypropylene-based resin composition forming the foamed layer contains a polypropylene-based resin and rubbery bodies (G) containing an ethylene propylene-based rubber. The rubbery bodies are dispersed in the polypropylene-based resin. The foamed particles (1) have a melting point Tm of 130-162°C.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

26.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION AND POLYMER

      
Numéro d'application JP2023033535
Numéro de publication 2024/070728
Statut Délivré - en vigueur
Date de dépôt 2023-09-14
Date de publication 2024-04-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Katagiri,takashi
  • Abe,shinya
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abrégé

The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition which is capable of forming a film that has excellent bending resistance; a composition; and a polymer. This method for producing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on the resist underlayer film that has been formed in the application step; and a step for performing etching using the resist pattern as a mask. With respect to this method for producing a semiconductor substrate, the resist underlayer film-forming composition contains a solvent and a polymer that has a structural unit represented by formula (1). (In formula (1), Ar1represents a divalent group that has an aromatic ring having 5 to 40 ring members; and X1represents a divalent group represented by formula (i).) (In formula (i), R1and R2 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, or these groups combine with each other to form a C3-20 divalent alicyclic hydrocarbon group together with the carbon atom to which these are bonded; and * and ** each denote a bonding hand in formula (1).)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 8/02 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols de cétones

27.

RESIST PATTERN FORMATION METHOD

      
Numéro d'application JP2023032396
Numéro de publication 2024/070535
Statut Délivré - en vigueur
Date de dépôt 2023-09-05
Date de publication 2024-04-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

The purpose of the present invention is to provide a method for forming a resist pattern having excellent pattern rectangularity. Provided is a method for forming a resist pattern, the method comprising: a step for applying a resist underlayer film-forming composition onto a substrate directly or indirectly; a step for forming a metal-containing resist film on the resist underlayer film formed by the resist underlayer film-forming composition application step; a step for exposing the metal-containing resist film to light; a step for preparing a developer solution; and a step for dissolving a light-exposed part in the metal-containing resist film that has been exposed to light using the developer solution to form a resist pattern.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 232/08 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocyclique contenant des cycles condensés
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/20 - Exposition; Appareillages à cet effet

28.

RESIST UNDERLAYER FILM-FORMING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application JP2023033814
Numéro de publication 2024/070786
Statut Délivré - en vigueur
Date de dépôt 2023-09-19
Date de publication 2024-04-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada,shuhei
  • Dei,satoshi
  • Hayashi,yuya
  • Akita,shunpei
  • Yoneda,eiji

Abrégé

Provided are: a resist underlayer film-forming composition which enables the formation of a resist underlayer film having excellent resist pattern rectangularity when the composition is exposed to extreme ultraviolet ray; and a method for manufacturing a semiconductor substrate using the composition. The resist underlayer film-forming composition is a composition for forming an underlayer film for a resist film which is subjected to the exposure to extreme ultraviolet ray, the composition comprising a compound having a iodine atom and a solvent, in which the compound having a iodine atom is a polymer having a repeating unit represented by formula (1), an aromatic-ring-containing compound having a iodine atom and having a molecular weight of 750 to 3000 inclusive, or a combination thereof, and the content ratio of the compound having a iodine atom in components other than the solvent in the underlayer film-forming composition is 50% by mass or more. (In formula (1), Ar1represents a bivalent group having a 5- to 40-membered aromatic ring; R0represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; and R1represents a monovalent organic group having 1 to 40 carbon atoms; in which at least one of Ar1, R0and R1 has a iodine atom.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

29.

SEARCHING METHOD FOR FUNCTIONAL MOLECULE FOR CAUSING RESPONSE IN CELL

      
Numéro d'application JP2023035799
Numéro de publication 2024/071424
Statut Délivré - en vigueur
Date de dépôt 2023-09-29
Date de publication 2024-04-04
Propriétaire
  • KEIO UNIVERSITY (Japon)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Saya, Hideyuki
  • Kato, Shoichi
  • Ikemoto, Atsushi

Abrégé

Provided is a vector or vector set for analyzing the function of a functional molecule, said vector or vector set comprising: a polynucleotide that codes for an expression system of a candidate molecule for the functional molecule; a polynucleotide that codes for a translation control sequence or a transcription control sequence which is activated by a response in a given cell; and a polynucleotide that codes for a reporter system which is operably linked with the translation control sequence or the transcription control sequence. Also provided is a searching method for a functional molecule which causes a response in a cell, said method comprising: introducing the vector or vector set into a cell; and measuring expression in the cell of a reporter system included in the vector or vector set.

Classes IPC  ?

  • C12N 5/10 - Cellules modifiées par l'introduction de matériel génétique étranger, p.ex. cellules transformées par des virus
  • C12N 15/09 - Technologie d'ADN recombinant
  • C12N 15/113 - Acides nucléiques non codants modulant l'expression des gènes, p.ex. oligonucléotides anti-sens
  • C12N 15/12 - Gènes codant pour des protéines animales
  • C12N 15/55 - Hydrolases (3)
  • C12N 15/63 - Introduction de matériel génétique étranger utilisant des vecteurs; Vecteurs; Utilisation d'hôtes pour ceux-ci; Régulation de l'expression
  • C12N 15/86 - Vecteurs viraux

30.

ANTIBACTERIAL COMPOSITION AND METHOD FOR DETERMINING ADMINISTRATION OF SAID ANTIBACTERIAL COMPOSITION TO SUBJECT

      
Numéro d'application JP2023034260
Numéro de publication 2024/063132
Statut Délivré - en vigueur
Date de dépôt 2023-09-21
Date de publication 2024-03-28
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Masuda Kanae
  • Aoto Yoshimasa
  • Isayama Jun
  • Ishikawa Hidefumi
  • Goji Hiroshi
  • Watanabe Kazuto
  • Kawasaki Hiroshi
  • Ito Yoshihiro
  • Amagai Masayuki

Abrégé

Provided are an antibacterial composition containing bacteria that exhibit antibacterial properties against bacteria having a positive correlation with a SCORAD value indicating the severity of atopic dermatitis, and a method for determining the administration of said antibacterial composition to a subject. The present invention comprises an antibacterial composition that contains resident skin bacteria as an active ingredient, the antibacterial composition acting against pro-inflammatory bacteria (excluding the resident skin bacteria).

Classes IPC  ?

  • A61K 35/74 - Bactéries
  • A61P 17/00 - Médicaments pour le traitement des troubles dermatologiques
  • C12Q 1/689 - Produits d’acides nucléiques utilisés dans l’analyse d’acides nucléiques, p.ex. amorces ou sondes pour la détection ou l’identification d’organismes pour les bactéries

31.

RADIATION-SENSITIVE COMPOSITION, RESIST-PATTERN-FORMING METHOD, RADIATION-SENSITIVE ACID GENERATOR AND POLYMER

      
Numéro d'application JP2023026224
Numéro de publication 2024/057701
Statut Délivré - en vigueur
Date de dépôt 2023-07-18
Date de publication 2024-03-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Taniguchi, Takuhiro
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Nishikori, Katsuaki

Abrégé

This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), R5is a group obtained by removing (m+n+2) hydrogen atoms from a monocyclic or condensed aromatic hydrocarbon ring having r carbon atoms. L−33 −or –COO−. r is an integer of 6 to 14. A1is a single bond, –O–, –S– or –NR3–. R1is a hydrogen atom or a monovalent organic group. X1is a chlorine atom, a bromine atom or an iodine atom. m is an integer of 1 to (r–2). N is an integer of 0 to (r–3). R2is a substituted or unsubstituted monovalent hydrocarbon. M+ is a monovalent cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 8/12 - Hydrolyse
  • C08F 20/22 - Esters contenant des halogènes
  • C08F 20/38 - Esters contenant du soufre
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/12 - Esters des alcools ou des phénols monohydriques
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

32.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023028119
Numéro de publication 2024/057751
Statut Délivré - en vigueur
Date de dépôt 2023-08-01
Date de publication 2024-03-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori,katsuaki
  • Kiriyama,kazuya
  • Taniguchi,takuhiro
  • Kinoshita,natsuko

Abrégé

Provided are: a radioactive-ray-sensitive resin composition that can exhibit sufficient levels of sensitivity and CDU performance when a next-generation technology is applied to the composition; and a pattern formation method. The radioactive-ray-sensitive resin composition comprises an onium salt compound containing a structure represented by formula (1), a resin containing a structure unit (I) having a phenolic hydroxyl group or a group capable of providing a phenolic hydroxyl group by the action of an acid, and a solvent. (In formula (1), Rf1and Rf2each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a fluorine atom, or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms; R1, R2and R3122 each independently represent an integer of 0 to 4; X1and X2each independently represent an oxygen atom or a sulfur atom: L represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 10 carbon atoms; R4and R5each independently represent a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; at least one of R4and R5represents a monovalent aromatic-ring-containing organic group containing a 5- to 40-membered aromatic ring; and Z+ represents a monovalent radioactive-ray-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 317/24 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples estérifiés
  • C08F 8/12 - Hydrolyse
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/12 - Esters des alcools ou des phénols monohydriques
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

33.

FOAMABLE PARTICLE PRODUCTION METHOD

      
Numéro d'application JP2023030797
Numéro de publication 2024/057883
Statut Délivré - en vigueur
Date de dépôt 2023-08-25
Date de publication 2024-03-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Inoue Tsubasa
  • Hira Akinobu

Abrégé

The present invention pertains to a method for producing foamable particles by using, as a base resin material, a mixture obtained by mixing a polypropylene-based resin A which is not a recovered material and a polypropylene-based resin B which is a recovered object of a post consumption material. Provided is a foamable particle production method that makes it possible to produce foamable particles in which variability in the foam expansion rate and reduction in the closed-cell rate are suppressed, and to have excellent appearance for a foamable particle molded body obtained by molding said foamable particles. In the foamable particle production method: a mixture obtained by mixing a polypropylene-based resin A having a melting point of 130-155°C and a polypropylene-based resin B which is a recovered object of a post consumption material is used as a base resin material; in the mixture, the blended proportion of the polypropylene-based resin A is 40-97 wt% and the blended proportion of the polypropylene-based resin B is 3-60 wt% (the total of the polypropylene-based resin A and the polypropylene-based resin B is 100 wt%); the melting point difference (melting point of the polypropylene-based resin B - melting point of the polypropylene-based resin A) between the polypropylene-based resin A and the polypropylene-based resin B is 10-30°C; the ash content of the polypropylene-based resin B is 5 wt% or less with respect to 100 wt% of the polypropylene-based resin B; and, regarding a melt peak indicated in a DSC curve obtained through thermal flux differential scanning calorimetry of the polypropylene-based resin B, the difference (Tme-Tms) between an extrapolated melting start temperature (Tms) and an extrapolated melting ending temperature (Tme) of the melt peak is 30°C or higher.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage

34.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATE, AND ELECTRONIC COMPONENT

      
Numéro d'application JP2023027900
Numéro de publication 2024/053282
Statut Délivré - en vigueur
Date de dépôt 2023-07-31
Date de publication 2024-03-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kawashima Naoyuki
  • Satonaka Eri
  • Anabuki Shoma

Abrégé

One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, and an electronic device. The polymer has a repeating structural unit represented by formula (1). [R11represents a divalent substituted or unsubstituted nitrogen-containing heteroaromatic ring, R12independently represent a divalent substituted or unsubstituted aromatic hydrocarbon group, R13represents a C1-20 hydrocarbon group to which at least one group represented by formula (a1) other than the two R12is bonded, X1independently represent -O-, -S-, or -N(R14)-, * represents a bond to R13, and ** represents a bond with another structural unit in polymer (A).]

Classes IPC  ?

  • C08G 65/34 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques
  • B32B 27/30 - Produits stratifiés composés essentiellement de résine synthétique comprenant une résine acrylique
  • C08F 12/34 - Monomères contenant plusieurs radicaux aliphatiques non saturés
  • C08F 290/06 - Polymères prévus par la sous-classe
  • C08K 5/00 - Emploi d'ingrédients organiques
  • C08L 25/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
  • C08L 101/02 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés

35.

POLYMER, COMPOSITION, CURED PRODUCT, AND DISPLAY ELEMENT

      
Numéro d'application JP2023032771
Numéro de publication 2024/053722
Statut Délivré - en vigueur
Date de dépôt 2023-09-08
Date de publication 2024-03-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Murakami Yoshitaka
  • Kashishita Kouji

Abrégé

One embodiment of the present invention relates to a polymer, a composition, a cured product, or a display element. The composition comprises a polymer having a structural unit represented by formula (1). [In formula (1), A is a divalent group having an aromatic heterocyclic ring, B is a divalent group having an aromatic ring or an aromatic heterocyclic ring and having an alkali-soluble group, and X is independently -O-, -NH- or -S-.]

Classes IPC  ?

  • C08L 101/02 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés
  • C08G 65/34 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques
  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants
  • G03F 7/032 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques avec des liants
  • G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels

36.

COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

      
Numéro d'application JP2023029521
Numéro de publication 2024/048271
Statut Délivré - en vigueur
Date de dépôt 2023-08-15
Date de publication 2024-03-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada, Yuya
  • Kao, Shen-Yuan

Abrégé

Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obtain a polished surface having a high reflective property. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a liquid medium, (C) an oxidizing agent, and (D) a nitrogen-containing hetrocyclic compound. The absolute value of the zeta potential of the (A) component of the composition for chemical mechanical polishing is 10 mV or more. When the content of the (C) component is noted as Mc (mass%) and the content of the (D) component is noted as Md (mass%), Mc/Md is 10 to 200.

Classes IPC  ?

  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • C09K 3/14 - Substances antidérapantes; Abrasifs

37.

FOAM PARTICLE, AND FOAM PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2023029853
Numéro de publication 2024/048327
Statut Délivré - en vigueur
Date de dépôt 2023-08-18
Date de publication 2024-03-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Yamasaki Shobu
  • Ito Yosuke

Abrégé

122 each independently represent a hydrocarbon group or a hydrocarbon group bonded via an oxygen atom.)

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

38.

MICROBIAL CARRIER FOR FOOD WASTE TREATMENT

      
Numéro d'application JP2023030990
Numéro de publication 2024/048520
Statut Délivré - en vigueur
Date de dépôt 2023-08-28
Date de publication 2024-03-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Iwayama Yoshihiro
  • Sunaga Keisuke

Abrégé

A microbial carrier for a food waste treatment, wherein: a base resin constituting the microbial carrier contains a thermoplastic starch and/or an aliphatic polyester; the biodegradability of the microbial carrier in a biodegradability test according to JIS K6953 is 60% or more; and the shape of the microbial carrier is columnar.

Classes IPC  ?

  • C08J 9/04 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable
  • C12N 1/00 - Micro-organismes, p.ex. protozoaires; Compositions les contenant; Procédés de culture ou de conservation de micro-organismes, ou de compositions les contenant; Procédés de préparation ou d'isolement d'une composition contenant un micro-organisme; Leurs milieux de culture

39.

MANUFACTURING METHOD FOR CONDUCTIVE FILM, LIQUID DISPERSION, RADIATION-SENSITIVE RESIN COMPOSITION, AND LIGHT EMITTING ELEMENT

      
Numéro d'application JP2023029520
Numéro de publication 2024/048270
Statut Délivré - en vigueur
Date de dépôt 2023-08-15
Date de publication 2024-03-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ichinohe,daigo
  • Katsui,hiromitsu
  • Yasuda,hiroyuki

Abrégé

The present invention provides a manufacturing method for a conductive film that has high conductivity and makes it possible to evenly fix a conductive carbon material over the entirety of a conductive film formation region. The present invention also provides a manufacturing method wherein it is possible to efficiently remove a dispersant that has remained in the conductive film, as well as a polymer that is in a section where a radiation-sensitive resin composition has not been subjected to light exposure. The present invention includes: a step (A) in which a liquid dispersion is applied on a main surface of a substrate and dried to form a first film, said liquid dispersion including a carbon material and a first polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (B) in which a radiation-sensitive resin composition is applied on the first film to form a second film, said radiation-sensitive resin composition having an acid generating agent and a second polymer that has one type of functional group among a carboxyl group, a hydroxyl group, and a phenolic hydroxyl group; a step (C) in which the second film is exposed to light; and a step (D) in which, after the step (C), the first polymer and the second polymer are removed by developing.

Classes IPC  ?

  • B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
  • B05D 1/36 - Applications successives de liquides ou d'autres matériaux fluides, p.ex. sans traitement intermédiaire
  • B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
  • B05D 3/10 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par d'autres moyens chimiques
  • B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
  • C09D 5/24 - Peintures électriquement conductrices
  • C09D 179/08 - Polyimides; Polyesterimides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • H05B 33/28 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition ou la disposition du matériau conducteur utilisé comme électrode des électrodes translucides
  • H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]

40.

ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING

      
Numéro d'application US2023030198
Numéro de publication 2024/039626
Statut Délivré - en vigueur
Date de dépôt 2023-08-15
Date de publication 2024-02-22
Propriétaire
  • INPRIA CORPORATION (USA)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Kasahara, Kazuki
  • Cardineau, Brian J.
  • Jiang, Kai
  • Meyers, Stephen T.
  • Narasimhan, Amrit K.
  • Voss, Matthew

Abrégé

A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C-Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
  • G03F 7/38 - Traitement avant le dépouillement selon l'image, p.ex. préchauffage
  • G03F 7/42 - Elimination des réserves ou agents à cet effet
  • G03F 7/20 - Exposition; Appareillages à cet effet

41.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM FORMING COMPOSITION

      
Numéro d'application JP2023025616
Numéro de publication 2024/034311
Statut Délivré - en vigueur
Date de dépôt 2023-07-11
Date de publication 2024-02-15
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hirasawa,kengo
  • Takada,kazuya
  • Ozaki,yuki
  • Kimata,hironori
  • Serizawa,ryuichi

Abrégé

Provided are a semiconductor substrate production method and film forming composition which are capable of forming a film having excellent etching resistance and excellent embedding properties. This semiconductor substrate production method involves a step for applying a film forming composition onto a substrate, wherein the film forming composition contains a metal compound, an aromatic compound, and a solvent; the aromatic compound has an aromatic hydrocarbon ring structure and a partial structure represented by formula (1) below; and the aromatic hydrocarbon ring structure has 6 or more carbon atoms. [Formula 1] (In formula (1), X is a group represented by formula (i), (ii), (iii), or (iv) below; and symbols * are sites binding respectively to adjacent two carbon atoms constituting the aromatic hydrocarbon ring structure.) [Formula 2] (In formula (i), R1is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R2is a monovalent organic group having 1-20 carbon atoms. In formula (ii), R3is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and R4is a monovalent organic group having 1-20 carbon atoms. In formula (iii), R5is a monovalent organic group having 1-20 carbon atoms. In formula (iv), R6 is a monovalent organic group having 1-20 carbon atoms.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs

42.

COMPOSITION, COMPOUND, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application JP2023025665
Numéro de publication 2024/029292
Statut Délivré - en vigueur
Date de dépôt 2023-07-12
Date de publication 2024-02-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Abe,shinya
  • Katagiri,takashi
  • Naganawa,atsuko
  • Yamada,shuhei
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abrégé

The purpose of the present invention is to provide a method for manufacturing a semiconductor substrate using a composition capable of forming a film having excellent etching resistance; and to provide said composition. The composition according to the present invention comprises a solvent and a compound having a partial structure represented by formula (1) below, wherein the molecular weight of the compound is greater than or equal to 600. (In formula (1), Ar1is a substituted or unsubstituted monovalent aromatic group having 5-30 ring members. n is an integer of 1-3. Ar2is a portion of a substituted or unsubstituted aromatic ring structure having 5-60 ring members and is formed together with two adjacent carbon atoms in formula (1). X1 represents a single bond or a divalent linking group .Each * is a bonding site with the two adjacent carbon atoms constituting the substituted or unsubstituted aromatic ring having 5-60 ring members. ** is a bonding site with a portion other than the partial structure represented by formula (1) in the abovementioned compound. r is an integer of 0-4.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C07C 13/58 - Anthracènes complètement ou partiellement hydrogénés
  • C07C 13/62 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à plus de trois cycles condensés
  • C07C 13/66 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à plus de trois cycles condensés le système cyclique condensé ne contenant que quatre cycles
  • C07C 39/17 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques sans autre insaturation que celle des cycles aromatiques contenant d'autres cycles en plus des cycles aromatiques à six chaînons
  • C07D 487/04 - Systèmes condensés en ortho
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

43.

METHOD FOR PRODUCING CARRIER FOR CHROMATOGRAPHY, AND CARRIER FOR CHROMATOGRAPHY

      
Numéro d'application JP2023027099
Numéro de publication 2024/029394
Statut Délivré - en vigueur
Date de dépôt 2023-07-25
Date de publication 2024-02-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Inoue, Yukiya
  • Miyajima, Ken
  • Kamide, Tomoyuki
  • Noguchi, Hiroshi
  • Nakamura, Satoshi

Abrégé

The present invention provides a carrier which is for chromatography, which has a large dynamic binding capacity with respect to an antibody or a fragment thereof, and through which a protein ligand is unlikely to leak even when the carrier is repeatedly used for isolation of an antibody. Provided is a method for producing a carrier for chromatography, said method comprising the following steps A-1 and B. (Step A-1) A step for immobilizing, to porous particles, one or more ligands selected from protein A, protein G, protein L, and analogues thereof. (Step B) A step for reacting the porous particles to which the one or more ligands have been immobilized in the step A-1 and a compound which has at least one ligand reactive group selected from groups represented by -C(=O)-O-C(=O)-, carbodiimide groups, and cyclic ether groups.

Classes IPC  ?

  • C07K 1/22 - Chromatographie d'affinité ou techniques analogues basées sur des procédés d'absorption sélective
  • C07K 16/00 - Immunoglobulines, p.ex. anticorps monoclonaux ou polyclonaux
  • B01D 15/38 - Adsorption sélective, p.ex. chromatographie caractérisée par le mécanisme de séparation impliquant une interaction spécifique non couverte par un ou plusieurs des groupes , p.ex. chromatographie d'affinité, chromatographie d'échange par ligand ou chromatographie chirale
  • B01J 20/24 - Composés macromoléculaires d'origine naturelle, p.ex. acides humiques ou leurs dérivés
  • B01J 20/281 - Absorbants ou adsorbants spécialement adaptés pour la chromatographie préparative, analytique ou de recherche
  • B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
  • C07K 14/31 - Peptides ayant plus de 20 amino-acides; Gastrines; Somatostatines; Mélanotropines; Leurs dérivés provenant de bactéries provenant de Micrococcaceae (F) provenant de Staphylococcus (G)

44.

THERAPEUTIC AGENT FOR OVARIAN CLEAR CELL CARCINOMA

      
Numéro d'application JP2023028482
Numéro de publication 2024/029608
Statut Délivré - en vigueur
Date de dépôt 2023-08-03
Date de publication 2024-02-08
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Ookubo Aki
  • Chiyoda Tatsuyuki
  • Yoshimura Takuma

Abrégé

Provided is a therapeutic agent that is effective for the treatment of ovarian clear cell carcinoma. The therapeutic agent for ovarian clear cell carcinoma contains a proteasome inhibitor as an active ingredient. Moreover, said proteasome inhibitor is a substance that reversibly or irreversibly binds to the 20s β5 subunit of a proteasome and inhibits chymotrypsin-like activity. Furthermore, said proteasome is 26s proteasome. The content ratio of the proteasome inhibitor in the therapeutic agent for ovarian clear cell carcinoma is 80 mass% or greater, 90 mass% or greater, or 100 mass%.

Classes IPC  ?

  • A61K 45/00 - Préparations médicinales contenant des ingrédients actifs non prévus dans les groupes
  • A61P 15/00 - Médicaments pour le traitement des troubles génitaux ou sexuels; Contraceptifs
  • A61P 35/00 - Agents anticancéreux
  • A61K 31/69 - Composés du bore

45.

POLYAMIDE-BASED RESIN FOAM PARTICLE AND POLYAMIDE-BASED RESIN FOAM PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2023027244
Numéro de publication 2024/029407
Statut Délivré - en vigueur
Date de dépôt 2023-07-25
Date de publication 2024-02-08
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Suenaga Katsuyuki

Abrégé

Provided are polyamide-based resin foam particles comprising a polyamide-based resin as a base material resin, the foam particles containing carbon nanotubes, wherein the closed-cell ratio of the foam particles is 70% or more.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

46.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND RADIATION-SENSITIVE ACID GENERATOR

      
Numéro d'application JP2023027258
Numéro de publication 2024/024801
Statut Délivré - en vigueur
Date de dépôt 2023-07-25
Date de publication 2024-02-01
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Miyao, Kensuke
  • Okazaki, Satoshi

Abrégé

This radiation-sensitive composition comprises a polymer having an acid-dissociable group and a compound represented by formula (1). L1represents a group having a (thio)acetal ring or the like. W1represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rfrepresents a fluorine atom, or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1are same or different, and a plurality of R2are same or different. When d represents 2, a plurality of W1are same or different, and a plurality of b are same or different. M+ represents a monovalent cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 381/12 - Composés sulfonium
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

47.

POLYAMIDE RESIN FOAM PARTICLES

      
Numéro d'application JP2023026977
Numéro de publication 2024/024716
Statut Délivré - en vigueur
Date de dépôt 2023-07-24
Date de publication 2024-02-01
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Yamanaka Ryo

Abrégé

The present invention provides polyamide resin foam particles which use, as a base material resin, a mixed resin of a polyamide resin A and a polyamide resin B, wherein: the polyamide resin A is an aliphatic polyamide; the polyamide resin B is a xylylene group-containing polyamide resin; and the mass ratio ((polyamide resin A):(polyamide resin B)) of the polyamide resin A to the polyamide resin B is 97:3 to 60:40.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08L 77/00 - Compositions contenant des polyamides obtenus par des réactions créant une liaison amide carboxylique dans la chaîne principale; Compositions contenant des dérivés de tels polymères

48.

PHOTOCATALYTIC SYNTHESIS OF ALPHA, BETA UNSATURATED CARBONYL COMPOUNDS AND THEIR INTERMEDIATES

      
Numéro d'application US2022037417
Numéro de publication 2024/019698
Statut Délivré - en vigueur
Date de dépôt 2022-07-18
Date de publication 2024-01-25
Propriétaire
  • JSR CORPORATION (Japon)
  • NEW IRIDIUM INC. (USA)
Inventeur(s)
  • Suguri, Takuya
  • Maruyama, Youichirou
  • Lim, Chern-Hooi
  • Qian, Gang
  • Liu, Yue
  • Cope, Elana

Abrégé

Described herein is a process of producing α,β unsaturated acids and amides and their intermediates via a photocatalytic reaction in the presence of a photocatalyst, oxygen, and optionally a solvent. The photocatalyst contains a tungstic acid or a salt of a tungstic acid. The process is simple, clean, and energy efficient, and provides good conversion, good selectivity, good turnover, and easy purification of end products.

Classes IPC  ?

  • C07C 51/367 - Préparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par des réactions ne créant pas de groupes carboxyle par introduction de groupes fonctionnels contenant l'oxygène lié uniquement par une liaison simple
  • C07C 51/377 - Préparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par des réactions ne créant pas de groupes carboxyle par hydrogénolyse de groupes fonctionnels
  • C07C 407/00 - Préparation de composés peroxy
  • C07C 409/04 - Composés peroxy le groupe —O—O— étant lié à un atome de carbone, qui n'est pas substitué de plus par des atomes d'oxygène, et à un atome d'hydrogène, c. à d. hydroperoxydes l'atome de carbone étant acyclique
  • C07C 57/04 - Acide acrylique; Acide méthacrylique
  • C07C 59/01 - Composés saturés ne comportant qu'un groupe carboxyle et contenant des groupes hydroxyle ou O-métal

49.

METHOD FOR PRODUCING FOAM BLOW MOLDED BODY, AND FOAM BLOW MOLDED BODY

      
Numéro d'application JP2023026245
Numéro de publication 2024/019042
Statut Délivré - en vigueur
Date de dépôt 2023-07-18
Date de publication 2024-01-25
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Gomibuchi Masahiro
  • Noro Jinichiro

Abrégé

The present invention provides a method for producing a foam blow molded body, the method comprising a step for blow molding a foamed parison that is obtained by foaming a mixed resin of a polyolefin resin (A) and an olefin-based thermoplastic elastomer (B). With respect to this method for producing a foam blow molded body, the polyolefin resin (A) is composed of a branched homopolypropylene (a1) and a linear block polypropylene (a2); the mass ratio ((a1):(a2)) of the branched homopolypropylene (a1) to the linear block polypropylene (a2) is 50:50 to 93:7; the olefin-based thermoplastic elastomer (B) is a hydrogenated product of a triblock copolymer that is composed of a crystalline olefin polymer block and a polymer block of a conjugated diene compound; and the added amount of the olefin-based thermoplastic elastomer (B) relative to 100 parts by mass of the polyolefin resin (A) is 20 parts by mass to 40 parts by mass in the mixed resin.

Classes IPC  ?

  • C08J 9/04 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 49/04 - Moulage par extrusion-soufflage

50.

COMPOSITION FOR 3D PRINTING SUPPORT OR 3D CELL CULTURE SUPPORT

      
Numéro d'application JP2023024928
Numéro de publication 2024/014377
Statut Délivré - en vigueur
Date de dépôt 2023-07-05
Date de publication 2024-01-18
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Akiyama, Minato
  • Kobayashi, Kunihiko

Abrégé

Provided is a composition that has exceptional salt resistance and is useful as a 3D printing support or a 3D cell culture support. A composition for a 3D printing support or a 3D cell culture support, the composition containing component (A) and component (B). (A) A polymer having structural units represented by formula (1). (B) An aqueous medium. [In formula (1), R1and R2each independently represent a hydrogen atom or a C1-10 alkyl group, or R1and R2 may bond to each other to form a C3-10 ring structure.]

Classes IPC  ?

  • C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
  • B33Y 10/00 - Procédés de fabrication additive
  • B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
  • B33Y 80/00 - Produits obtenus par fabrication additive
  • C08F 126/00 - Homopolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétéroc
  • C08L 39/00 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple; Compositions contenant des dérivés de tels polymères
  • C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains

51.

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR RESIN FILM HAVING PATTERN, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT SUBSTRATE

      
Numéro d'application JP2023019497
Numéro de publication 2024/004462
Statut Délivré - en vigueur
Date de dépôt 2023-05-25
Date de publication 2024-01-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ito Hirokazu
  • Ogawa Taku
  • Ando Mitsuka
  • Tatara Ryoji

Abrégé

A negative photosensitive resin composition comprising: a polymer (A); a crosslinking agent (B); and a photo-cation generator (C), wherein the polymer (A) has a structural unit represented by formula (a2) and has, at a terminal, a reactive group Y that reacts with the crosslinking agent (B) by the action of cations generated from the photo-cation generator (C) through light irradiation, and the photo-cation generator (C) includes a photo-cation generator (C1) that generates, through light irradiation, an acid having a pKa(1) of at least -3 and at most 3 as calculated using a Gaussian function based on the pKa of methanesulfonic acid in an aqueous solution of 25°C.

Classes IPC  ?

  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
  • C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

52.

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN FORMATION METHOD

      
Numéro d'application JP2023013354
Numéro de publication 2023/248569
Statut Délivré - en vigueur
Date de dépôt 2023-03-30
Date de publication 2023-12-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya Takuya
  • Nishikori Katsuaki
  • Kiriyama Kazuya
  • Matsumura Yuushi
  • Terada Nozomi

Abrégé

Provided is a radiation-sensitive resin composition comprising: a polymer which has a first structural unit represented by formula (1) and of which the solubility in a developing solution is changed by the action of an acid; a radiation-sensitive acid generator; and an acid diffusion regulator which has a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 20/10 - Esters
  • G03F 7/004 - Matériaux photosensibles

53.

PHOTOSENSITIVE RESIN COMPOSITION, PATTERNED RESIN FILM, METHOD FOR PRODUCING PATTERNED RESIN FILM, AND SEMICONDUCTOR CIRCUIT SUBSTRATE

      
Numéro d'application JP2023014565
Numéro de publication 2023/243199
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-12-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ogawa Taku
  • Nakafuji Shin-Ya
  • Ando Mitsuka
  • Kanno Kimiyuki
  • Tatara Ryoji
  • Ito Hirokazu

Abrégé

An embodiment of the present invention relates to a photosensitive resin composition, a patterned resin film, a method for producing a patterned resin film, and a semiconductor circuit substrate. The photosensitive resin composition comprises: a polymer (A) that is at least one selection from the group consisting of polyimides and polyimide precursors, that contains a structural unit (a) containing a structural unit derived from an acid anhydride represented by formula (1) and contains a diamine-derived structural unit (b), and that has, e.g., a maleimide group, at a terminal on the polymer; (B) a photopolymerization initiator; and (D) a solvent. [In formula (1), L represents a single bond, etc.; R1to R3represents a hydrogen atom, etc., or represents an alkylene group formed by the bonding of the R1and R2(or R3) in the same ring with each other; n1and n2represent an integer from 0 to 3; and Y1represents a structure given by (Y1)(-Ar1-), etc.]

Classes IPC  ?

  • G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques
  • G03F 7/20 - Exposition; Appareillages à cet effet

54.

PHOTOSENSITIVE RESIN COMPOSITION, RESIN FILM HAVING PATTERN, METHOD FOR PRODUCING RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT BOARD

      
Numéro d'application JP2023014564
Numéro de publication 2023/243198
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-12-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Okuda Ryuichi
  • Doi Takashi
  • Tatara Ryoji
  • Ito Hirokazu

Abrégé

One aspect of the present invention relates to: a photosensitive resin composition; a resin film having a pattern; a method for producing a resin film having a pattern; and a semiconductor circuit board. The photosensitive resin composition contains: (A) a polymer which is at least one type selected from the group consisting of a polyimide and a polyimide precursor and which contains a structural unit (a) including a structural unit derived from an acid anhydride represented by formula (1) and a structural unit (b) derived from a diamine; (B) a naphthoquinonediazide compound; (C1) a crosslinkable compound having a methylol group or an alkoxymethyl group; and (D) a solvent. [In formula (1): L denotes a single bond or the like; R1to R3each denote a hydrogen atom or the like, or denote an alkylene group formed by bonding RR1and R2(or R3) of the same ring; n1to n2each denote an integer between 0 and 3; and Y1denotes a structure represented by a formula such as (Y1)(-Ar1-).]

Classes IPC  ?

  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

55.

METHOD FOR PRODUCING VERTICAL ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE, DISPLAY

      
Numéro d'application JP2023020441
Numéro de publication 2023/238765
Statut Délivré - en vigueur
Date de dépôt 2023-06-01
Date de publication 2023-12-14
Propriétaire
  • JSR CORPORATION (Japon)
  • MATTRIX TECHNOLOGIES, INC. (USA)
Inventeur(s)
  • Katsui,hiromitsu
  • Liu,bo
  • Lemaitre,maxime
  • Yasuda,hiroyuki

Abrégé

The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.

Classes IPC  ?

  • H10K 50/30 - Transistors organiques émetteurs de lumière
  • C01B 32/174 - Dérivatisation; Solubilisation dans les solvants; Dispersion dans les solvants
  • C08L 79/08 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
  • H10K 71/60 - Formation de régions ou de couches conductrices, p. ex. d’électrodes
  • H10K 85/10 - Polymères ou oligomères organiques
  • H10K 85/20 - Composés de carbone, p. ex. nanotubes de carbone ou fullerènes

56.

EXOSOME COMPLEX AND MANUFACTURING METHOD THEREOF

      
Numéro d'application JP2023020906
Numéro de publication 2023/238837
Statut Délivré - en vigueur
Date de dépôt 2023-06-06
Date de publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hori Miyuki
  • Nakagawa Fumiko
  • Shinoda Tatsuya
  • Hayase Yoji

Abrégé

Provided are an exosome complex capable of achieving higher therapeutic effects than conventional products, and a manufacturing method thereof. This exosome complex contains an exosome and affinity molecules for a target cell, said affinity molecules including a hydrophobic moiety anchoring to the membrane surface of the exosome and an affinity moiety for the target cell, wherein 5 or more on average of the affinity molecules are contained per exosome.

Classes IPC  ?

  • C12N 5/07 - Cellules animales ou tissus animaux
  • C12N 5/0775 - Cellules souches mésenchymateuses; Cellules souches dérivées du tissu adipeux
  • C12N 15/115 - Aptamères, c. à d. acides nucléiques liant spécifiquement une molécule cible avec une haute affinité sans s'y hybrider
  • C12N 15/88 - Introduction de matériel génétique étranger utilisant des procédés non prévus ailleurs, p.ex. co-transformation utilisant la micro-encapsulation, p.ex. utilisant des vésicules liposomiques

57.

METHOD FOR PRODUCING ELECTROCONDUCTIVE FILM, TOUCH PANEL, DISPLAY PANEL

      
Numéro d'application JP2023016108
Numéro de publication 2023/238530
Statut Délivré - en vigueur
Date de dépôt 2023-04-24
Date de publication 2023-12-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Katsui,hiromitsu
  • Yasuda,hiroyuki

Abrégé

Provided is a method for producing an electroconductive film that has high electroconductivity and is capable of evenly fixing an electroconductive carbon material over the entirety of an electroconductive film formation region. The method includes a step (A) for applying an organic resin material that contains a polymer having a hydrocarbon group to a base material and forming an organic resin layer, a step (B) for applying a liquid dispersion that contains a dispersant and carbon nanotubes to the organic resin layer and forming a coating film after step (A), a step (C) for drying the coating film after step (B), and a step (D) for implementing dispersant extraction to remove the dispersant from the coating film after step (C).

Classes IPC  ?

  • B05D 1/36 - Applications successives de liquides ou d'autres matériaux fluides, p.ex. sans traitement intermédiaire
  • B05D 3/10 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par d'autres moyens chimiques
  • B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
  • B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers

58.

POLYOLEFIN RESIN FOAM PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application JP2023018806
Numéro de publication 2023/234078
Statut Délivré - en vigueur
Date de dépôt 2023-05-19
Date de publication 2023-12-07
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Nohara Tokunobu

Abrégé

This method for manufacturing polyolefin resin foam particles includes: a dispersion step for dispersing polyolefin resin particles in an aqueous medium; a foaming agent addition step for adding a physical foaming agent to inside an airtight container; and a foaming step for impregnating the resin particles with the physical foaming agent inside the airtight container, followed by releasing the resin particles from the airtight container together with the aqueous medium, and causing the resin particles to foam, thereby producing foam particles having an apparent density of 10 kg/m3to 80 kg/m3. The physical foaming agent contains a hydrofluoroolefin. The added amount of the hydrofluoroolefin in the foaming agent addition step is 10 to 30 parts by mass with respect to 100 parts by mass of resin particles.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

59.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018515
Numéro de publication 2023/228841
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2) (excluding a compound corresponding to the first onium salt compound), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z+represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4represents a monovalent organic group having 1 to 40 carbon atoms; one of Rf21and Rf22represents a fluorine atom and the other represents a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar represents a monovalent organic group having a 5- to 40-membered aromatic ring; R5to R8122 each independently represent an integer of 1 to 6; and X represents a single bond or a bivalent hetero-atom-containing group.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • C09K 3/00 - Substances non couvertes ailleurs

60.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018519
Numéro de publication 2023/228843
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance and pattern rectangularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and an alcohol-type solvent having a boiling point of 90°C or higher. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, or a monovalent hydrocarbon group; one of Rf11and Rf1211 + represents a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

61.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018526
Numéro de publication 2023/228845
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity and LWR performance can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms or a group having such a structure that in which a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2and R3each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; one of Rf11and Rf1211 +represents a monovalent radiation-sensitive onium cation.) (In formula (2), R422 + represents a monovalent organic cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

62.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018516
Numéro de publication 2023/228842
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when forming a resist pattern with a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition contains: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit that has an acid-dissociable group; and a solvent. (In formula (1), R1is a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group including a divalent heteroatom-containing group between the carbon-carbon bonds of the aforementioned hydrocarbon group. R2and R3are each a hydrogen atom or a monovalent hydrocarbon group. One of Rf11and Rf1211 +is a monovalent radiation-sensitive onium cation.) (In formula (2), R4is a monovalent organic group that includes a cyclic structure and has 3-40 carbon atoms. Rf21and Rf2222 + is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

63.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023018530
Numéro de publication 2023/228847
Statut Délivré - en vigueur
Date de dépôt 2023-05-18
Date de publication 2023-11-30
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Inami,hajime
  • Furukawa,tsuyoshi
  • Otsuka,noboru
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive resin composition with which it is possible to form a resist film that is capable of exhibiting sensitivity, LWR performance, water repellency, and development defect inhibitory ability at satisfactory levels; and a pattern formation method. A radiation-sensitive resin composition comprising an onium salt compound represented by formula (1), a first resin comprising structural units that have an acid-dissociable group, a second resin that has a higher fluorine content than the first resin and has an acid-dissociable group, and a solvent. (In formula (1), R1is a group comprising a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group comprising a divalent hetero atom-containing group between a carbon-carbon bond of said hydrocarbon group. Each of R2and R3is an independent hydrogen atom or a monovalent hydrocarbon group. When a plurality of R2s and a plurality of R3s exist, the plurality of R2s are the same as or different from each other and the plurality of R3s are the same as or different from each other. One of Rf11and Rf12is the fluorine atom and the other one thereof is the fluorine atom or a monovalent fluorinated hydrocarbon group. When a plurality of Rf11s and a plurality of Rf12s exist, the plurality of Rf11s are the same as or different from each other and the plurality of Rf1211 + is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

64.

RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RADIATION SENSITIVE ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT

      
Numéro d'application JP2023006542
Numéro de publication 2023/223624
Statut Délivré - en vigueur
Date de dépôt 2023-02-22
Date de publication 2023-11-23
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Taniguchi,takuhiro
  • Nishikori,katsuaki
  • Kinoshita,natsuko
  • Kiriyama,kazuya

Abrégé

The present invention provides a radiation sensitive resin composition, a pattern forming method, etc., capable of achieving, at sufficient levels, sensitivity, LWR performance, and process window when next-generation technology is applied. This radiation sensitive resin composition comprises a resin that includes a repeating unit A having an acid dissociable group, an onium salt that has an organic acid anion moiety and an onium cation moiety, and a solvent, wherein the onium salt includes at least one group selected from the group consisting of a pentafluorosulfanyl group, a pentafluorosulfanyloxy group, and a pentafluorosulfanylthio group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

65.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023002997
Numéro de publication 2023/203827
Statut Délivré - en vigueur
Date de dépôt 2023-01-31
Date de publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

Provided are a radiation-sensitive resin composition and a pattern formation method by which sensitivity, critical dimension uniformity (CDU) performance, and development residue performance can be exhibited on a sufficient level when next-generation technology is applied. The radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit A having an acid-dissociable group, and a structural unit D having a phenolic hydroxy group; and a solvent. The structural unit D has a phenolic hydroxy group and an alkyl group on the same aromatic ring, and in the aromatic ring of the structural unit D, the alkyl group is bonded to a carbon atom adjacent to the carbon atom to which the phenolic hydroxy group is bonded. The radiation-sensitive resin composition further satisfies at least one condition selected from the group consisting of the following conditions 1 and 2. Condition 1: The resin is a radiation-sensitive acid-generating resin further including a structural unit B including an organic acid anion moiety, and an onium cation moiety including an aromatic ring structure having a fluorine atom. Condition 2: An onium salt (excluding the radiation-sensitive acid-generating resin) including an organic acid anion moiety and an onium cation including an aromatic ring structure having a fluorine atom is further provided.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

66.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION

      
Numéro d'application JP2023014519
Numéro de publication 2023/204078
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-10-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Sakai,kazunori
  • Kasai,tatsuya
  • Furusawa,ayaka
  • Nii,akitaka

Abrégé

Provided are a method for producing a semiconductor substrate and a silicon-containing composition which are capable of forming a silicon-containing film with good resist pattern collapse suppression properties and good film thickness uniformity. This method involves a step for directly or indirectly coating a substrate with a silicon-containing composition, a step for coating, with a resist film forming composition, the silicon-containing film formed in the silicon-containing composition coating step, an exposure step for irradiating, with radioactive rays, the resist film formed in the resist film forming composition coating step, and a step for at least developing the exposed resist film, wherein the silicon-containing composition contains a silicon-containing compound, a polymer having a structural unit represented by formula (1) below, and a solvent, and the content ratio of the silicon-containing compound accounting for components other than the solvent in the silicon-containing composition is 50%-99.9% by mass. (In formula (1), RA1represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. RA2 is a monovalent organic group having 1-20 carbon atoms.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

67.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND

      
Numéro d'application JP2023014339
Numéro de publication 2023/199851
Statut Délivré - en vigueur
Date de dépôt 2023-04-07
Date de publication 2023-10-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Naganawa,atsuko
  • Yamada,shuhei
  • Katagiri,takashi
  • Abe,shinya
  • Nakatsu,hiroki
  • Miyauchi,hiroyuki

Abrégé

Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C07C 13/547 - Hydrocarbures polycycliques ou leurs dérivés hydrocarbonés acycliques à cycles condensés à trois cycles condensés un cycle au moins n'étant pas un cycle à six chaînons, les autres cycles étant au plus des cycles à six chaînons
  • C07C 33/36 - Alcools polyhydroxyliques contenant des cycles aromatiques à six chaînons et d'autres cycles
  • C07C 39/17 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques sans autre insaturation que celle des cycles aromatiques contenant d'autres cycles en plus des cycles aromatiques à six chaînons
  • C07C 39/23 - Composés comportant au moins un groupe hydroxyle ou O-métal lié à un atome de carbone d'un cycle aromatique à six chaînons polycycliques contenant des cycles aromatiques à six chaînons et d'autres cycles avec une insaturation autre que celle des cycles aromatiques
  • C07C 43/215 - Ethers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons avec une insaturation autre que celle des cycles aromatiques à six chaînons
  • C07D 207/335 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
  • C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
  • C07D 333/18 - Radicaux substitués par des hétéro-atomes, autres que les halogènes, liés par des liaisons simples par des atomes de soufre
  • C07F 5/02 - Composés du bore
  • C07F 7/08 - Composés comportant une ou plusieurs liaisons C—Si
  • C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si

68.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND RESIST UNDERLAYER FILM FORMING COMPOSITION

      
Numéro d'application JP2023014498
Numéro de publication 2023/199881
Statut Délivré - en vigueur
Date de dépôt 2023-04-10
Date de publication 2023-10-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Komatsu,hiroyuki
  • Dobashi,masato
  • Tatsubo,daiki
  • Yoshinaka,sho
  • Akita,shunpei
  • Dei,satoshi
  • Yoneda,eiji
  • Ehara,kengo

Abrégé

The present invention provides: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition that is capable of forming a resist underlayer film having excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a repeating unit (1) which comprises an organic sulfonic acid anion moiety and an onium cation moiety.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

69.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2023006294
Numéro de publication 2023/195255
Statut Délivré - en vigueur
Date de dépôt 2023-02-21
Date de publication 2023-10-12
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Watanabe Daichi
  • Tomihama Munehisa
  • Nishikori Katsuaki

Abrégé

This radiation-sensitive resin composition comprises a first polymer and a compound. The first polymer has a first structural unit that contains a substructure in which a hydrogen atom in a carboxy group, phenolic hydroxyl group, or amide group is substituted by a group with formula (1); has a second structural unit that contains a phenolic hydroxyl group; and has a solubility in developer that is modified by the action of acid. The compound has a monovalent organic acid anion and a monovalent radiation-sensitive onium cation that contains an aromatic ring in which at least one hydrogen atom is substituted by a fluorine atom or a fluorine atom-containing group.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

70.

METHOD FOR PRODUCING ABRASIVE GRAINS, COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, AND POLISHING METHOD

      
Numéro d'application JP2023009228
Numéro de publication 2023/189400
Statut Délivré - en vigueur
Date de dépôt 2023-03-10
Date de publication 2023-10-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yanagi, Takanori
  • Wang, Pengyu
  • Nakanishi, Koji

Abrégé

The present invention provides: a composition for chemical mechanical polishing, the composition being capable of selectively polishing tungsten films by increasing the polishing rate of tungsten films with respect to silicon oxide films, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. The present invention also provides: a composition for chemical mechanical polishing, the composition being capable of polishing a silicon oxide film at a high polishing rate, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. A method for producing abrasive grains according to the present invention comprises a step in which particles each having a surface to which a hydroxyl group (-OH) is immobilized via a covalent bond, an alkoxysilane having an epoxy group, and a basic compound are mixed and heated.

Classes IPC  ?

  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09K 3/14 - Substances antidérapantes; Abrasifs
  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe

71.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE

      
Numéro d'application JP2023009712
Numéro de publication 2023/189502
Statut Délivré - en vigueur
Date de dépôt 2023-03-13
Date de publication 2023-10-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Abe, Yudai
  • Kiriyama, Kazuya

Abrégé

This radiation-sensitive composition contains a polymer having an acid-dissociable group and a compound represented by formula (1). In formula (1), A1represents a (m+n+2)-valent aromatic ring group. In formula (1), "-OH" and "-COO-" are bound to the same benzene ring in A1. An atom to which "-OH" is bound is located adjacent to an atom to which "-COO-" is bound. R1represents a monovalent group having a cyclic(thio)acetal structure. M+ represents a monovalent organic cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • C09K 3/00 - Substances non couvertes ailleurs

72.

EXPANDED BEADS, AND EXPANDED BEAD MOLDED BODY

      
Numéro d'application JP2023007329
Numéro de publication 2023/189114
Statut Délivré - en vigueur
Date de dépôt 2023-02-28
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Kitahara Taizo

Abrégé

Expanded beads comprising a linear low density polyethylene as a base resin, wherein: the linear low density polyethylene has a biomass degree of 40% or more as measured by ASTM D 6866; in a DSC curve obtained by heating from 23°C to 200°C at a heating rate of 10°C/min, the expanded beads have a crystal structure in which are present a melting peak (intrinsic peak) unique to the linear low density polyethylene, and one or more melting peaks (high temperature peaks) on a higher temperature side than the intrinsic peak; the total heat of fusion of the expanded beads is at least 70 J/g and at most 100 J/g; and the heat of fusion at the high temperature peak is at least 10 J/g and at most 50 J/g.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles

73.

EXPANDED BEAD PRODUCTION METHOD, AND EXPANDED BEADS

      
Numéro d'application JP2023007330
Numéro de publication 2023/189115
Statut Délivré - en vigueur
Date de dépôt 2023-02-28
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Kitahara Taizo

Abrégé

A method for producing expanded beads having a bulk density of 10-240 kg/m3, the method expanding resin beads having, as the base resin, a mixed resin from at least two linear low density polyethylenes. The mixed resin contains a polyethylene A having a biomass degree of at least 50% and a melt flow rate (MFR) of 0.1-3 g/10min, and a polyethylene B. The difference between the MFR of A and the MFR of B is 0-2 g/10min, the mass ratio of A and B is 5/95-95/5, and the biomass degree of the mixed resin is 5% or more. In a DSC curve, the expanded beads have a crystal structure in which are present melting peaks unique to the linear low density polyethylenes and a high-temperature peak on the high-temperature side thereof, the heat of fusion at the high-temperature peak being 10-50 J/g.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage

74.

METHOD FOR PRODUCING FOAMABLE POLYAMIDE-BASED RESIN PARTICLES, METHOD FOR PRODUCING POLYAMIDE-BASED RESIN FOAMED PARTICLES, AND POLYAMIDE-BASED RESIN FOAMED PARTICLES

      
Numéro d'application JP2023008103
Numéro de publication 2023/189213
Statut Délivré - en vigueur
Date de dépôt 2023-03-03
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Yamanaka Ryo

Abrégé

A method for producing foamable polyamide-based resin particles according to the present invention includes impregnating polyamide-based resin particles with an inorganic physical foaming agent in a gas phase, wherein the polyamide-based resin particles have a water content of at least 2.5 mass% and contain 0.5-10 mass% of carbon black. The foamable polyamide-based resin particles are obtained by heating and foaming foamable polyamide resin particles.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

75.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE

      
Numéro d'application JP2023009713
Numéro de publication 2023/189503
Statut Délivré - en vigueur
Date de dépôt 2023-03-13
Date de publication 2023-10-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Furuichi, Kota
  • Nakamura, Ryosuke
  • Furukawa, Tsuyoshi

Abrégé

The present invention causes a radiation-sensitive composition to contain a polymer including acid-labile group and a compound (Q) given by formula (1). In formula (1), L1represents an ester group, -CO-NR3-, a (thio) ether group, or a sulfonyl group. L2 represents a single bond or a divalent linking group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
  • C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
  • C07C 309/27 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes carboxyle liés au squelette carboné
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 327/04 - Cycles à cinq chaînons
  • C07D 327/06 - Cycles à six chaînons
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

76.

METHOD FOR PRODUCING GEOPOLYMER FOAM

      
Numéro d'application JP2023013267
Numéro de publication 2023/190909
Statut Délivré - en vigueur
Date de dépôt 2023-03-30
Date de publication 2023-10-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Noro Jinichiro
  • Naito Naoki

Abrégé

The present invention provides a method for producing a geopolymer foam, wherein: a reaction slurry that contains an aluminosilicate, an alkali metal silicate, aggregate and water is obtained; an expandable slurry is formed by adding a foaming agent to the reaction slurry; and a geopolymer foam is produced by heating the expandable slurry. This method for producing a geopolymer foam is characterized in that: mica which has an average particle diameter of 50-500 µm and a volume ratio (X) of particles having a particle diameter of 10 µm or less of 3% or less is used as the aggregate; and the reaction slurry has a viscosity of 3,000-15,000 Pa∙s at 23°C.

Classes IPC  ?

  • C04B 28/26 - Silicates de métaux alcalins
  • C04B 12/04 - Ciments à base de silicates de métaux alcalins ou d'ammonium
  • C04B 14/20 - Mica; Vermiculite
  • C04B 20/00 - Emploi de matières comme charges pour mortiers, béton ou pierre artificielle prévu dans plus d'un groupe et caractérisées par la forme ou la répartition des grains; Traitement de matières spécialement adapté pour renforcer leur propriétés de charge dans les mortiers, béton ou pierre artificielle prévu dans plus d'un groupe de ; Matières expansées ou défibrillées
  • C04B 38/02 - Mortiers, béton, pierre artificielle ou articles de céramiques poreux; Leur préparation par addition d'agents chimiques gonflants

77.

METHOD FOR PRODUCING THERMOPLASTIC RESIN FOAM PARTICLE MOLDED BODY

      
Numéro d'application JP2023009245
Numéro de publication 2023/176712
Statut Délivré - en vigueur
Date de dépôt 2023-03-10
Date de publication 2023-09-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Miura Tomohiro
  • Sasaki Kenta

Abrégé

A method for producing a thermoplastic resin foam particle molded body according to the present invention comprises a crack filling step and an in-mold molding step. Foam particles (2) to be used in the crack filling step have a columnar shape, while having one or more defective parts of one or more kinds, the defective parts being selected from the group consisting of through holes and grooves. In cut surfaces of the foam particles (2) obtained by cutting each foam particle (2) by a plane that is perpendicular to the axial direction of the foam particle (2) at the center of the axial direction, the ratio Ca/A of the average cross-sectional area Ca of one defective part to the average cross-sectional area A of the foam particles (2) is 0.01 to 0.20, and the ratio Ct/A of the total cross-sectional area Ct of the defective parts to the average cross-sectional area A of the foam particles (2) is 0.02 to 0.20. The filling rate F of the foam particles (2) in a state where a mold (1) is completely closed is 125% to 220%.

Classes IPC  ?

  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse

78.

PRODUCTION METHOD FOR THERMOPLASTIC RESIN FOAMED PARTICLE MOLDED BODY

      
Numéro d'application JP2023009246
Numéro de publication 2023/176713
Statut Délivré - en vigueur
Date de dépôt 2023-03-10
Date de publication 2023-09-21
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Miura Tomohiro
  • Sasaki Kenta

Abrégé

AAmaxminminmaxmax of the second portion (122) in the cracking filling step is 5-100%.

Classes IPC  ?

  • B29C 44/60 - Mesure, commande ou régulation
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 44/54 - Alimentation en matière à mouler dans une cavité de moulage ouverte ou sur une surface mobile, c.à d. pour la fabrication d'objets de longueur indéfinie sous forme de particules ou de grains expansibles
  • C08J 9/22 - Post-traitement de particules expansibles; Façonnage d'articles en mousse

79.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Numéro d'application JP2023009992
Numéro de publication 2023/176868
Statut Délivré - en vigueur
Date de dépôt 2023-03-15
Date de publication 2023-09-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishiguchi Naoki
  • Tsuyuki Ryouta
  • Matsumoto Tomoyuki
  • Ishii Akira
  • Ito Atsushi
  • Higuchi Tetsuya

Abrégé

The present invention provides a photosensitive resin composition which contains a polymer (A) that has an acid-cleavable group, a photoacid generator (B) and a solvent (C), wherein: the polymer (A) comprises a structural unit (I) that is represented by formula (1) and a structural unit (III) that has a glass transition temperature Tg of 50°C or less in the form of a homopolymer; and the photoacid generator (B) is a compound which generates an acid that has a van der Waals volume of 200 Å3or more when irradiated with active light or radiation. The present invention also provides: a method for forming a resist pattern film, the method using this photosensitive resin composition; and a method for producing a plated shaped article. The details of R1A and L in formula (1) are as described in the description.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/02 - Acides monocarboxyliques contenant moins de dix atomes de carbone; Leurs dérivés
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/004 - Matériaux photosensibles

80.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION

      
Numéro d'application JP2023004990
Numéro de publication 2023/162780
Statut Délivré - en vigueur
Date de dépôt 2023-02-14
Date de publication 2023-08-31
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nakatsu,hiroki
  • Naganawa,atsuko
  • Yamada,shuhei
  • Ueda,kanako

Abrégé

The purpose of the present invention is to provide: a semiconductor substrate production method using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. This semiconductor substrate production method includes a step in which a resist underlayer film-forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is formed directly or indirectly on the resist underlayer film formed in the application step, and a step in which etching is performed using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound including a boron atom.

Classes IPC  ?

  • C07F 5/02 - Composés du bore
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage

81.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2022046747
Numéro de publication 2023/157455
Statut Délivré - en vigueur
Date de dépôt 2022-12-19
Date de publication 2023-08-24
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive composition contains: (A) a polymer; and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing four or more iodine atoms.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

82.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2022046748
Numéro de publication 2023/157456
Statut Délivré - en vigueur
Date de dépôt 2022-12-19
Date de publication 2023-08-24
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive composition contains: (A) a polymer including a structural unit (U) represented in formula (1); and (B) a radiation-sensitive acid generator composed of an onium cation having at least one group Rf1selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding the fluoro group in the fluoroalkyl group), and an organic anion containing an iodine atom. In formula (1), R1is a hydrogen atom, a methyl group, or the like. X1is a single bond, an ether bond, an ester bond, or the like. Ar1is a cyclic group bonded to X1via an aromatic ring. A hydroxyl group or a –ORYgroup is bonded to the atom adjacent to the atom bonded to X1among the atoms constituting the aromatic ring in Ar1. RY is an acid-dissociable group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

83.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Numéro d'application JP2023004775
Numéro de publication 2023/157801
Statut Délivré - en vigueur
Date de dépôt 2023-02-13
Date de publication 2023-08-24
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishiguchi Naoki
  • Endo Ayako
  • Matsumoto Tomoyuki

Abrégé

[Problem] The present invention addresses the problem of providing: a photosensitive resin composition which has excellent volatility regarding a solvent therein and from which it is possible to produce a resist coating film in which the generation of coating bubbles is sufficiently suppressed; a method for producing a resist pattern film using the photosensitive resin composition; and a method for producing a plated shaped article using the resist pattern film. [Solution] A photosensitive resin composition characterized by comprising: a polymer (A) that has a structural unit having a phenolic hydroxyl group and a structural unit derived from a (meth)acrylate having an acid-dissociable group; a specific photoacid generator (B); and an organic solvent (C) that contains 3-ethoxyethyl propionate, wherein the solid content concentration is 30 mass% or more.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

84.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER

      
Numéro d'application JP2022044273
Numéro de publication 2023/153059
Statut Délivré - en vigueur
Date de dépôt 2022-11-30
Date de publication 2023-08-17
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama Ken

Abrégé

This radiation-sensitive resin composition contains a polymer which has a first structural unit represented by the following formula (1) and of which the solubility in a developer changes under the action of an acid, and a compound represented by the following formula (2).

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

85.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023003308
Numéro de publication 2023/153295
Statut Délivré - en vigueur
Date de dépôt 2023-02-02
Date de publication 2023-08-17
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yokoi,hiroki
  • Furukawa,taiichi
  • Furukawa,tsuyoshi
  • Inami,hajime
  • Nemoto,ryuichi

Abrégé

Provided are a radiation-sensitive resin composition that has suitable storage stability and makes it possible to form a resist film with excellent sensitivity, LWR performance, water repellency, and development defect-suppressing performance, and a pattern formation method. The radiation-sensitive resin composition contains: a first resin including a structural unit (I) represented by formula (1), a structural unit (II) represented by formula (2) (excluding the structural unit represented by formula (1)), and a structural unit (III) having an acid-cleavable group; and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L1is an alkanediyl group having 1-5 carbon atoms. Rf1is a monovalent fluorinated hydrocarbon group having 2-10 carbon atoms and 5-7 fluorine atoms. In formula (2), RK2is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Lfis a fluorine-substituted or unsubstituted divalent organic group having 1-20 carbon atoms. L2is *-COO- or *-OCO-. * is a bond on the Lfside. p is an integer of 0-2. When a plurality of Lfand L2are present, the plurality of Lfand L2may be the same or different from each other. Rf2is a fluorine-substituted or unsubstituted monovalent organic group having 1-20 carbon atoms. Lfand Rf2 have a total of one or more fluorine atoms.)

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/10 - Esters
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/20 - Exposition; Appareillages à cet effet

86.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023003312
Numéro de publication 2023/153296
Statut Délivré - en vigueur
Date de dépôt 2023-02-02
Date de publication 2023-08-17
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Furukawa,taiichi
  • Furukawa,tsuyoshi
  • Inami,hajime

Abrégé

Provided are a radiation-sensitive resin composition capable of forming a resist film with excellent sensitivity, LWR performance, water repellency, and suppression of development flaws, and having good storage stability; and a pattern forming method. A radiation-sensitive resin composition comprising a polymer comprising structural units (I) represented by formula (1) and structural units differing from said structural units (I); an onium salt represented by formula (i); and a solvent. (In formula (1), RK1is a hydrogen atom, a fluorine atom, a methyl group, or trifluoromethyl group. L1is a 1-5 carbon alkanediyl group. Rf1is a 2-10 carbon fluorinated hydrocarbon group with 5-7 fluorine atoms.) (In formula (i), Ra1is a substituted or unsubstituted 1-40 carbon monovalent organic group in which the atom adjacent to the sulfur atom is not bound to a fluorine atom or fluorinated hydrocarbon group. X+ is a monovalent onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
  • C07D 327/04 - Cycles à cinq chaînons
  • C07D 327/06 - Cycles à six chaînons
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

87.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023003307
Numéro de publication 2023/153294
Statut Délivré - en vigueur
Date de dépôt 2023-02-02
Date de publication 2023-08-17
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Egawa,fuyuki
  • Furukawa,taiichi
  • Furukawa,tsuyoshi
  • Inami,hajime
  • Nemoto,ryuichi

Abrégé

The purpose of the present invention is to provide: a radiation-sensitive resin composition which enables the formation of a resist film having excellent sensitivity, LWR performance, water repellency and development defect reducing properties and has satisfactory storage stability; and a pattern formation method. Provided is a radiation-sensitive resin composition comprising: a polymer containing a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by formula (α); and a solvent. (In formula (1), RK1represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; L1represents an alkanediyl group having 1 to 5 carbon atoms; and Rf1represents a fluorinated hydrocarbon group having 5 to 7 fluorine atoms and also having 2 to 10 carbon atoms.) (In formula (α), RWrepresents a monovalent organic group containing a cyclic structure and having 3 to 40 carbon atoms; Rfaand Rfbeach independently represent a fluorine atom or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; R11and R12each independently represent a hydrogen atom, a fluorine atom, a hydrocarbon group having 1 to 10 carbon atoms, or a fluorinated hydrocarbon group having 1 to 10 carbon atoms; n1 represents an integer of 1 to 4, in which, when n1 is 2 or more, a plurality of Rfa's and Rfb's are the same as or different from each other; n2 represents an integer of 0 to 4, in which, when n2 is 2 or more, a plurality of R11's and R12's are the same as or different from each other; no carbonyl group is interposed between a sulfur atom in a sulfonic acid ion and the cyclic structure in RW; and Z+ represents a monovalent onium cation.)

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
  • C07D 327/06 - Cycles à six chaînons
  • C07D 493/10 - Systèmes condensés en spiro
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/20 - Exposition; Appareillages à cet effet

88.

EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, MOLDED OBJECT FROM EXPANDED CRYSTALLINE-THERMOPLASTIC-RESIN PARTICLES, AND PRODUCTION METHOD THEREFOR

      
Numéro d'application JP2023003416
Numéro de publication 2023/153310
Statut Délivré - en vigueur
Date de dépôt 2023-02-02
Date de publication 2023-08-17
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura Takumi
  • Ohta Hajime

Abrégé

A molded object from expanded crystalline-thermoplastic-resin particles which is obtained by mutually fusion-bonding columnar expanded crystalline-thermoplastic-resin particles (1) having no through-hole. The molded object from expanded crystalline-thermoplastic-resin particles has an expansion ratio of 15-90. The molded object from expanded crystalline-thermoplastic-resin particles has a closed-cell content of 90% or higher. The molded object from expanded crystalline-thermoplastic-resin particles has an open-cell content of 2-12%.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • B29C 44/00 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage
  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles

89.

POLYPROPYLENE-BASED RESIN FOAM PARTICLES, METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN FOAM PARTICLES, AND LOGISTICS PACKAGING MATERIAL

      
Numéro d'application JP2023001337
Numéro de publication 2023/149207
Statut Délivré - en vigueur
Date de dépôt 2023-01-18
Date de publication 2023-08-10
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Oi Takashi
  • Ohta Hajime

Abrégé

Foam particles which have a mass ratio of foam core layer to coating layer of 97:3-88:12 and a bulking factor of 5-45 times, inclusive, and have a coating layer which comprises PE-LLD, wherein the melting point of the PE-LLD is 105-130°, inclusive, and the bend elastic constant Ms of the PE-LLD is 120-600MPa, inclusive. A logistics packaging material comprising a foam-particle molded body, wherein the scale factor of the molded body is 5-45 times, inclusive, the maximum flexural strength thereof is 0.3MPa or higher, the product of the tensile strength times the tensile elongation is 18MPa·% or higher, the coefficient of dynamic friction against a polyvinyl chloride sheet is at least 0.4 and less than 0.7, and the coefficient of static friction against a polyvinyl chloride sheet is less than 1.0.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

90.

POLYMER

      
Numéro d'application JP2023002847
Numéro de publication 2023/149393
Statut Délivré - en vigueur
Date de dépôt 2023-01-30
Date de publication 2023-08-10
Propriétaire
  • JSR CORPORATION (Japon)
  • NATIONAL UNIVERSITY CORPORATION, IWATE UNIVERSITY (Japon)
Inventeur(s)
  • Oishi Yoshiyuki
  • Tsukamoto Tadashi
  • Kadota Toshiaki
  • Iizuka Shunsuke
  • Okamoto Koichi

Abrégé

This polymer consists of a repeating unit represented by formula (1). [In formula (1), -N(R')-RN(R')- is a structure derived from an unsubstituted or substituted dimer diamine, and R', R1and R2 are each independently a hydrogen atom, a halogen atom, an unsubstituted or substituted hydrocarbon group having 1-20 carbon atoms, or an unsubstituted or substituted heterocyclic aromatic group having 3-20 carbon atoms.]

Classes IPC  ?

  • C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromolécule; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides

91.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATED BODY, AND ELECTRONIC COMPONENT

      
Numéro d'application JP2023002850
Numéro de publication 2023/149394
Statut Délivré - en vigueur
Date de dépôt 2023-01-30
Date de publication 2023-08-10
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kadota Toshiaki
  • Iizuka Shunsuke
  • Okamoto Koichi
  • Nishino Kenta

Abrégé

One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminated body, or an electronic component, said composition including a polymer containing a repeating unit that is represented by formula (1). [In formula (1): -N(R')-R3-N(R')- is a structure derived from a dimer diamine substituted by an unsubstituted group or a substituted group; R', R1, and R2each independently represent a hydrogen atom, a halogen atom, a C1-20 hydrocarbon group substituted by an unsubstituted or a substituted group, a C3-20 heterocyclic aliphatic group substituted by an unsubstituted or a substituted group, or a C3-20 heterocyclic aromatic group substituted by an unsubstituted or a substituted group; and -NR1R2may be a nitrogen-containing heterocyclic group with 5-20 ring-forming atoms in which R1and R2 are bound to each other.]

Classes IPC  ?

  • C08L 79/04 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides
  • B32B 27/42 - Produits stratifiés composés essentiellement de résine synthétique comprenant des résines de condensation d'aldéhydes, p.ex. avec des phénols, des urées ou des mélamines
  • C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromolécule; Polyhydrazides; Polyamide-acides ou précurseurs similaires de polyimides

92.

METHOD FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, HOLDER FOR MANUFACTURING INTRAVASCULAR INDWELLING DEVICE, AND METHOD FOR EVALUATING INTRAVASCULAR INDWELLING DEVICE

      
Numéro d'application JP2023002985
Numéro de publication 2023/145957
Statut Délivré - en vigueur
Date de dépôt 2023-01-31
Date de publication 2023-08-03
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Tokunaga Takeshi
  • Tsukada Jitsuro

Abrégé

In this method for manufacturing an intravascular indwelling device, there are used a cylindrical holder (1) for holding an intravascular indwelling device (20) in an interior space, and an outer cylindrical body (2) that has an inside diameter larger than the outside diameter of the holder (1). The holder (1) holding the intravascular indwelling device (20) is housed in the outer cylindrical body (2), and a suspension (S) of the target cells is fed into the outer cylindrical body (2). The outer cylindrical body (2) and the holder (1) are operated so that the suspension (S) flows relative to the intravascular indwelling device (20) while in contact with the intravascular indwelling device (20), and the target cells are cultured.

Classes IPC  ?

  • A61L 31/00 - Matériaux pour autres articles chirurgicaux
  • A61F 2/86 - Stents ayant une forme caractérisée par des éléments filiformes; Stents ayant une forme caractérisée par une structure de type filet ou de type à mailles
  • C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
  • C12N 5/07 - Cellules animales ou tissus animaux

93.

METHOD FOR PRODUCING LENS, RADIATION-SENSITIVE COMPOSITION FOR PRODUCING LENS, LENS, IMAGING ELEMENT, IMAGING DEVICE, DISPLAY ELEMENT, AND DISPLAY DEVICE

      
Numéro d'application JP2023001175
Numéro de publication 2023/140248
Statut Délivré - en vigueur
Date de dépôt 2023-01-17
Date de publication 2023-07-27
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Matsumura, Nobuji
  • Wada, Mitsuhiro
  • Hamaguchi, Hitoshi

Abrégé

A lens is produced by a method comprising: a step for applying a radiation-sensitive composition onto a base material to form a coating film; a step for irradiating a portion of the coating film with a radioactive ray to generate an acid in an exposed portion; a step for developing the coating film that has been irradiated with the radioactive ray to form a pattern; a step for irradiating the pattern with a radioactive ray; and a step for heating the pattern after the irradiation of the pattern with the radioactive ray to form a lens. The radiation-sensitive composition comprises at least one polymer (A), a radiation-sensitive acid generator (B) and a solvent(C), in which the polymer (A) contains, in a single molecule or different molecules, a structural unit (a1) having a hydroxyl group bound to an aromatic ring and a structural unit (a2) having such a configuration that an acid-dissociating group is detached by the action of an acid to generate a carboxyl group.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage

94.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND CLEANING FLUID

      
Numéro d'application JP2023000437
Numéro de publication 2023/136260
Statut Délivré - en vigueur
Date de dépôt 2023-01-11
Date de publication 2023-07-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ozaki,yuki
  • Hirabayashi,hiroki
  • Hirasawa,kengo
  • Serizawa,ryuichi

Abrégé

Provided are: a method for producing a semiconductor substrate using a cleaning fluid excellent in terms of the property of cleaning peripheral portions of substrates and waste-liquid stability; a method for forming a resist underlayer film; and the cleaning fluid. This method for producing a semiconductor substrate comprises: a step in which a composition for resist underlayer film formation is applied directly or indirectly to a substrate; a step in which peripheral portions of the substrate are cleaned with a cleaning fluid; and a step in which after the cleaning step, a resist pattern is formed directly on or indirectly over the resist underlayer film formed in the application step. The composition for resist underlayer film formation includes a metal compound and a solvent, and the cleaning fluid includes an organic acid.

Classes IPC  ?

  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe

95.

INORGANIC FOAM

      
Numéro d'application JP2022047601
Numéro de publication 2023/127722
Statut Délivré - en vigueur
Date de dépôt 2022-12-23
Date de publication 2023-07-06
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Naito Naoki
  • Noro Jinichiro

Abrégé

Provided is an inorganic foam, a base material of the inorganic foam being an inorganic polymer having a leucite crystal structure. The area of a peak derived from the leucite crystal in an X-ray diffraction spectrum of the inorganic foam is characterized by satisfying Equation (1). (1): D(geo)/D(pur)≧0.5 (D(geo) denotes the area of a peak located at 2θ=27.3° derived from the leucite crystal in the X-ray diffraction spectrum of the inorganic foam, and D(pur) is the area of a peak located at 2θ=27.3° derived from the leucite crystal in an X-ray diffraction spectrum of a pure material of leucite.)

Classes IPC  ?

  • C04B 38/00 - Mortiers, béton, pierre artificielle ou articles de céramiques poreux; Leur préparation
  • C01B 33/32 - Silicates de métaux alcalins
  • C01B 33/40 - Argiles
  • C01B 33/42 - Micas
  • C04B 12/04 - Ciments à base de silicates de métaux alcalins ou d'ammonium
  • C04B 28/26 - Silicates de métaux alcalins
  • C04B 35/00 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques

96.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, ACID GENERATOR, AND COMPOUND

      
Numéro d'application JP2022041361
Numéro de publication 2023/119910
Statut Délivré - en vigueur
Date de dépôt 2022-11-07
Date de publication 2023-06-29
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kinoshita, Natsuko
  • Taniguchi, Takuhiro

Abrégé

Provided is a radiation-sensitive composition containing: a polymer having an acid dissociable group; and at least one compound (b) selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2). In formula (1), R1is a 1-20C monovalent organic group. R2is either a single bond, or is a 1-20C bivalent group that bonds to the N- in formula (1) through -CR4R5- or an aromatic ring. Ma+is an a-valent cation. In formula (2), R7is a group having a partial structure in which an iodine atom is bonded to an aromatic ring. Mb+ is a b-valent cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 311/09 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé le squelette carboné étant substitué de plus par au moins deux atomes d'halogène
  • C07C 311/21 - Sulfonamides ayant des atomes de soufre de groupes sulfonamide liés à des atomes de carbone de cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes sulfonamide lié à un atome de carbone d'un cycle aromatique à six chaînons
  • C07C 381/12 - Composés sulfonium
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
  • C07D 333/76 - Dibenzothiophènes
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

97.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2022045161
Numéro de publication 2023/120200
Statut Délivré - en vigueur
Date de dépôt 2022-12-07
Date de publication 2023-06-29
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Miyao, Kensuke
  • Sakano, Nozomi
  • Okazaki, Satoshi

Abrégé

Provided is a radiation-sensitive composition comprising a polymer having a structural unit represented by formula (1) and a photodegradable base. In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or the like. X1is an alkanediyl group, an oxygen atom, or a sulfur atom. Y1is a monovalent hydrocarbon group, a monovalent fluorinated hydrocarbon group, or a halogen atom. R2is a monovalent organic group. B1is a single bond or *1−COO−. R3is a substituted or unsubstituted divalent hydrocarbon group. Z1is a single bond, −O−, −COO−, −OCO−, −OCOO−, −CONR4−, −NR4CO−, −OCONR4-, −NR4COO−, or −NR4CONR5−. R4and R5 are hydrogen atoms or monovalent hydrocarbon groups.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/20 - Exposition; Appareillages à cet effet

98.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION

      
Numéro d'application JP2022044114
Numéro de publication 2023/112672
Statut Délivré - en vigueur
Date de dépôt 2022-11-30
Date de publication 2023-06-22
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nakatsu,hiroki
  • Ueda,kanako
  • Tanaka,ryotaro
  • Mayumi,kosuke
  • Naganawa,atsuko

Abrégé

The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which includes a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the coating step, and a step for etching while using the resist pattern as a mask, wherein: the composition for forming the resist underlayer film contains a compound having a partial structure represented by formula (1), and a solvent; and the compound has at least one monovalent group which includes an aromatic heterocycle having a 5- to 20-membered ring. (In formula (1), Ar1and Ar2each independently represent a substituted or unsubstituted aromatic ring which has a 5- to 20-membered ring and forms a condensed ring structure and two adjacent carbon atoms in formula (1). R1 represents one or more groups selected from the group consisting of a monovalent ring including a substituted or unsubstituted aromatic ring having a 5- to 60-membered ring, and a monovalent group including an aromatic heterocycle having a 5- to 20-membered ring. L is a single bond or a divalent linking group. * and ** each represent a position which bonds to a section of said compound other than the partial structure represented by formula (1). m and n each independently represent an integer from 0 to 3. However, m+n is 1 or higher.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C07D 209/08 - Indoles; Indoles hydrogénés avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés directement aux atomes de carbone de l'hétérocycle 
  • C07D 209/14 - Radicaux substitués par des atomes d'azote ne faisant pas partie d'un radical nitro
  • C08G 61/00 - Composés macromoléculaires obtenus par des réactions créant une liaison carbone-carbone dans la chaîne principale de la macromolécule

99.

METHOD FOR PURIFYING COMPOSITION

      
Numéro d'application JP2022045954
Numéro de publication 2023/112939
Statut Délivré - en vigueur
Date de dépôt 2022-12-14
Date de publication 2023-06-22
Propriétaire
  • JSR CORPORATION (Japon)
  • NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japon)
Inventeur(s)
  • Miyazaki Yuta
  • Arai Takayuki
  • Ito Masayoshi
  • Negishi Hashiru
  • Harashima Hideyoshi
  • Sato Yusuke

Abrégé

A method for purifying a composition that comprises a step for dissolving the composition containing a compound represented by formula(1) [in formula (1): R1represents -N(R2)-R2(wherein R2represents a C1-C4 alkyl group); R3and R4represent a C3-C8 alkanediyl group; R5represents a hydroxyl group; R6represents -R7-OH (wherein R7represents a C4-C12 alkanediyl group) or a hydrogen atom; and n is an integer of 0 or 1] in an aqueous layer and performing liquid-liquid extraction, wherein an oil layer used in the liquid-liquid extraction contains one or more liquids selected from the group consisting of a ketone liquid, an ester liquid and an ether liquid each having a solubility parameter (SP value) of 14.8-20.5 (MPa1/2).

Classes IPC  ?

  • C07C 213/10 - Séparation; Purification; Stabilisation; Emploi d'additifs
  • A61K 9/16 - Agglomérés; Granulés; Microbilles
  • A61K 31/713 - Acides nucléiques ou oligonucléotides à structure en double-hélice
  • A61K 47/18 - Amines; Amides; Urées; Composés d’ammonium quaternaire; Acides aminés; Oligopeptides ayant jusqu’à cinq acides aminés
  • A61K 47/24 - Composés organiques, p.ex. hydrocarbures naturels ou synthétiques, polyoléfines, huile minérale, gelée de pétrole ou ozocérite contenant des atomes autres que des atomes de carbone, d'hydrogène, d'oxygène, d'halogènes, d'azote ou de soufre, p.ex. cyclométhicone ou phospholipides
  • A61K 47/28 - Stéroïdes, p.ex. cholestérol, acides biliaires ou acide glycyrrhétinique
  • A61K 47/34 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone, p.ex. polyesters, acides polyaminés, polysiloxanes, polyphosphazines, copolymères de polyalkylène glycol o
  • A61P 35/00 - Agents anticancéreux
  • C07C 219/06 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes hydroxy estérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé les groupes hydroxy étant estérifiés par des acides carboxyliques ayant les groupes carboxyle estérifiants liés à des atomes d'hydrogène ou à des atomes de carbone acycliques d'un squelette carboné acyclique saturé
  • C07C 219/08 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes hydroxy estérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé au moins un des groupes hydroxy étant estérifié par un acide carboxylique ayant le groupe carboxyle estérifiant lié à un atome de carbone acyclique d'un squelette carboné acyclique non saturé
  • C07C 227/40 - Séparation; Purification
  • C07C 229/12 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant un seul groupe amino et un seul groupe carboxyle liés au squelette carboné l'atome d'azote du groupe amino étant lié de plus à des atomes de carbone acycliques ou à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons à des atomes de carbone de squelettes carbonés acycliques
  • C12N 15/113 - Acides nucléiques non codants modulant l'expression des gènes, p.ex. oligonucléotides anti-sens

100.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING SUBSTRATE, AND COMPOUND

      
Numéro d'application JP2022040696
Numéro de publication 2023/100574
Statut Délivré - en vigueur
Date de dépôt 2022-10-31
Date de publication 2023-06-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Mita,michihiro
  • Miyake,masayuki

Abrégé

Provided are: a radiation-sensitive resin composition that can be formed into a resist film having satisfactory levels of sensitivity and CDU performance even when a next-generation technology is applied; and a pattern formation method. The radiation-sensitive resin composition contains a compound A represented by formula (I). [Chemical 1] (In the formula, R1is a (m+m')-valent organic group and has a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both. X1is a group represented by formula (1-1) or a group represented by formula (1-2). X2is a group represented by formula (2-1) or a group represented by formula (2-2). Y+ is a monovalent onium cation. m is an integer of 1-2. m' is an integer of 0-1.) [Chemical 2] (In the formula, * represents a bond with another group.) The radiation-sensitive resin composition also contains a resin B including a structural unit having an acid-dissociable group, a radiation-sensitive acid generator other than the compound A, and a solvent.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 59/11 - Composés saturés ne comportant qu'un groupe carboxyle et contenant des groupes hydroxyle ou O-métal contenant des cycles
  • C07C 61/04 - Composés saturés comportant un groupe carboxyle lié à un cycle à trois ou quatre chaînons
  • C07C 62/08 - Composés saturés contenant des groupes éther, des groupes , des groupes ou des groupes
  • C07C 62/24 - Composés saturés contenant des groupes cétone le groupe cétone faisant partie d'un cycle
  • C07C 69/34 - Esters d'acides acycliques polycarboxyliques saturés dont un groupe carboxyle estérifié est lié à un atome de carbone acyclique
  • C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
  • C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
  • C07C 381/12 - Composés sulfonium
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
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