In a method to obtain information to control a manufacturing process for a stacked semiconductor device including several semiconductor layers requiring electrically interconnection, sample data of a semiconductor device sample to be inspected are provided. An X-ray imaging scan of the sample obtaining respective X-ray imaging data is performed. Sample detail information of sample details of the sample are gathered from the X-ray imaging data which are vital for the manufacturing process. Multiple Regions of Interest (ROIs) are identified from the gathered sample detail information by processing data resulting from an ROI identification model (22), such ROI identification model (22) being previously trained in a machine learning process. Metrology data are extracted from the identified ROIs by processing data resulting from a metrology model (31), such metrology model (31) being previously trained in a machine learning process. With such method, a process time to obtain the required information to control the manufacturing process can be reduced.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
2.
METHOD AND DEVICE FOR THE POST-TREATMENT OF A FLUORIDE LAYER FOR AN OPTICAL SYSTEM FOR THE VUV WAVELENGTH RANGE, AND OPTICAL ELEMENT COMPRISING SAID FLUORIDE LAYER
The invention relates to a method for the post-treatment of a fluoride layer (1) for an optical element (2) for use in the VUV wavelength range, having the step of: irradiating the fluoride layer (1) with UV/VUV radiation (8) in the presence of an active fluorination compound (FW). The invention also relates to an optical element (2) comprising a fluoride layer (1) which is post-treated using the aforementioned method and to an optical assembly comprising at least one such optical element (2).
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p.ex. par irradiation
G02B 1/18 - Revêtements pour garder des surfaces optiques propres, p.ex. films hydrophobes ou photocatalytiques
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
3.
METHOD AND DEVICE FOR PRODUCING A FLUORIDIC PROTECTIVE COATING FOR A REFLECTIVE OPTICAL ELEMENT
The invention relates to a method for producing a fluoridic protective coating (11) for protecting a metallic reflection layer (12) of a reflective optical element (13) for the VUV wavelength range, comprising the step of: irradiating a native oxide layer (16) of the metallic reflection layer (12) with UV/VUV radiation (17) in the presence of a fluoridation agent (FW) for converting the native oxide layer (16) into a fluoride layer (18) of the fluoridic protective coating (11). The invention also relates to a reflective optical element (13) with a fluoridic protective coating (11) which has been produced by means of this method and also to an optical arrangement with at least one such reflective optical element (13).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p.ex. par irradiation
The invention relates to a mirror, in particular for a microlithographic projection exposure apparatus, and to a method of processing a mirror. In one aspect, the mirror has an optical effective surface (11, 21, 31), a mirror substrate (12, 22, 32), a reflection layer system (17, 27, 37) for reflecting electromagnetic radiation that is incident on the optical effective surface, at least one piezoelectric layer (14, 24, 34) which is arranged between mirror substrate and reflection layer system and to which an electric field for creating a locally variable deformation can be applied by way of a first electrode arrangement (15, 25, 35) situated on the side of the piezoelectric layer facing the reflection layer system, and by way of a second electrode arrangement (13, 23, 33) situated on the side of the piezoelectric layer facing the mirror substrate, and a layer (16, 26b, 36b) of amorphous material which is compaction-sensitive on exposure to low-energy electron beam radiation and which is arranged on the side of the piezoelectric layer facing the reflection layer system and has a thickness of at least 20 μm.
G02B 7/185 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la forme de la surface du miroir
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
5.
METHOD AND DEVICE FOR FORMING A FLUORIDE OR OXYLFLUORIDE LAYER FOR AN OPTICAL ELEMENT FOR THE VUV WAVELENGTH RANGE, AND OPTICAL ELEMENT COMPRISING SAID FLUORIDE OR OXYLFLUORIDE LAYER
The invention relates to a method for forming a fluoride or oxylfluoride layer (1) for an optical element (2) for use in the VUV wavelength range, having the steps of: depositing an cxide layer (4) and converting the oxide layer (4) into the fluoride or oxylfluoride layer (1) by irradiating the oxide layer (4) with UV/VUV radiation (6) in the presence of an active fluorination compound (FW). The invention also relates to an optical assembly comprising at least one such optical element (2) and to a corresponding device for forming a fluoride or oxylfluoride layer (1) for an optical element (2) which is designed for use in the VUV wavelength range.
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p.ex. par irradiation
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
G02B 1/18 - Revêtements pour garder des surfaces optiques propres, p.ex. films hydrophobes ou photocatalytiques
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
6.
MIRROR DEVICE, PROJECTION OBJECTIVE AND METHOD FOR MEASURING THE TEMPERATURE OF A MIRROR
The invention relates to a mirror device, in particular for a microlithographic projection exposure system, comprising a mirror (20), a sensor unit (26) and a control unit (38). The mirror (20) comprises a mirror body (23) and a reflective surface (24) provided on the mirror body (23). The sensor unit (26) is designed to detect infrared radiation given off by the mirror body (23) in order to derive a temperature measurement value therefrom and to send the temperature measurement value to the control unit (38). The mirror (20) comprises a target (37) with an increased emissivity for infrared radiation. The invention also relates to a method for measuring the temperature of a mirror (20).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to an EUV reflectometer (EUVR) for measuring the reflectivity of a test object (PR) reflecting EUV radiation according to the wavelength of the EUV radiation and according to the incidence angle of the EUV radiation on a reflective surface (PRO) of the test object, comprising an EUV radiation source (SQ) with devices for generating a source spot for emitting EUV radiation, a beam-shaping unit (SFE) for receiving EUV radiation from the source spot and for generating a measuring beam (MS), a positioning apparatus (POS) for retaining the test object (PR) and for positioning the test object in relation to the measuring beam (MS) in multiple degrees of freedom, in such a way that, during operation, the measuring beam (MS) impinges on the reflective surface (PRO) at a predefinable incidence angle at a predefinable measuring point in the region of a measuring spot (MFL), as well as a detector (DET), sensitive to EUV radiation, for detecting the EUV radiation reflected by the reflective surface (PRO) and for generating detector signals that represent the EUV radiation reflected by the test object. The EUV reflectometer has a source position monitoring device (QPOS), which is independent of the EUV radiation source (SQ), for monitoring the spatial position of the source spot relative to the beam-shaping unit.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
8.
MEASURING METHOD FOR EUV REFLECTOMETRY, AND EUV REFLECTOMETER
In a measuring method which uses an EUV reflectometer to measure the reflectivity of an EUV radiation-reflecting test object (PR) as a function of the wavelength of the EUV radiation and of the angle of incidence of the EUV radiation on a reflective surface (OB) of the test object, a measurement beam (STR) directed at the surface (OB) is generated using EUV radiation by virtue of a first partial system (TS1) which comprises a monochromator (MC) and is part of a beam shaping unit (SFE) being used to image an EUV radiation-emitting source spot (QF) on an exit gap (SP) of the monochromator and by virtue of a second partial system (TS2) of the beam shaping unit being used to image the exit gap on the surface (OB) of the test object (PR) in order to generate a measurement spot (MFL). In relation to the measurement beam (STR), the test object (PR) is positioned in multiple degrees of freedom such that, during operation, the measurement beam (STR) is incident on the reflective surface (OB) at a specifiable angle of incidence in the region of a measurement spot (MFL). A property of a beam reflected by the surface of the test object is detected by means of a detector (DET), with detector signals which represent the EUV radiation reflected by the test object being generated. These detector signals are evaluated in order to determine reflectivity measurement values. Within a beam direction control operation, the position of the measurement spot on the surface of the test object is altered by way of a controlled modification of a beam direction of the measurement beam (STR) by virtue of a reflective manipulator (MAN) being formed by a first mirror (S1) and, downstream thereof in the beam direction, at least one second mirror (S2) of the second partial system and by virtue of these mirrors being displaced in coordinated fashion with one another in at least one rigid body degree of freedom in response to control signals from the control unit.
G01N 21/33 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
G01M 11/00 - Test des appareils optiques; Test des structures ou des ouvrages par des méthodes optiques, non prévu ailleurs
9.
MIRROR DEVICE, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM, AND METHOD FOR MEASURING THE TEMPERATURE OF A MIRROR
The invention relates to a mirror device, in particular for a microlithographic projection exposure system, comprising a mirror (20), a sensor unit (41, 42, 44, 47, 49) and a control unit (38). The mirror (20) comprises a mirror body (23) and a reflective surface (24) provided on the mirror body (23). The sensor unit (41, 42, 44, 47, 49) comprises a sensor element (41, 49) and a signal path (50) extending to the control unit (38) in order to transmit a measurement signal representing the temperature of the sensor element (41, 49) to the control unit (38). The sensor element (41, 49) is provided in the substrate of the mirror body (23), the sensor element comprising a plurality of electrical conductor paths (41) integrated in the substrate of the mirror body (23), and the conductor paths (41) forming a plurality of crossing points (51), and the conductor paths (41) being electrically conductively connected to one another at the crossing points (51). The invention also relates to a method for measuring the temperature of a mirror (20).
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
G01K 1/02 - Moyens d’indication ou d’enregistrement spécialement adaptés aux thermomètres
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
10.
COOLING DEVICE FOR COOLING A POSITION-SENSITIVE COMPONENT OF A LITHOGRAPHY SYSTEM
A cooling device (200) for cooling a position-sensitive component (102) of a lithography system (1), comprising a cooling line (206) with a liquid chamber (218) for conducting a cooling liquid (112) to the position-sensitive component (102) and a gas chamber (220) for receiving a gas (222), and an elastic separating membrane (224) which is arranged inside the cooling line (206) and separates the gas chamber (220) from the liquid chamber (218).
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 27/64 - Systèmes pour donner des images utilisant des éléments optiques pour la stabilisation latérale et angulaire de l'image
11.
OPTICAL ELEMENT FOR A PROJECTION EXPOSURE SYSTEM, OPTICAL SYSTEM COMPRISING SAME AND PROJECTION EXPOSURE SYSTEM COMPRISING THE OPTICAL ELEMENT AND/OR THE OPTICAL SYSTEM
The invention relates to an optical element (100, 200) for a projection exposure system (1), comprising a mirror body (104, 204), the mirror body (104, 204) having a mirror section (124, 224) with an optically active surface (102, 202) and a base section (106, 206) provided on the rear side of the mirror section (124, 224), and the base section (106, 206) having a greater stiffness in comparison to the mirror section (124, 224), multiple actuator linkages (128, 130, 132, 228, 230, 232) for linking actuators to the optical element (100, 200), the actuator linkages (128, 130, 132, 228, 230, 232) being provided on the base section (106, 206), and a reinforcing rib structure (156, 238) attached on the rear side of the mirror section (124, 224).
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
G02B 7/198 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la position du miroir par rapport à son support
12.
COMPUTER IMPLEMENTED METHOD FOR DEFECT DETECTION IN AN IMAGING DATASET OF A WAFER, CORRESPONDING COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM PRODUCT AND SYSTEMS MAKING USE OF SUCH METHODS
Computer implemented method (82) for defect detection comprising: obtaining an imaging dataset (28) of a wafer (24); verifying a defect criterion in a subset of the imaging dataset (28) of the wafer (24), the defect criterion comprising an observation representation (88) of the subset of the imaging dataset (28) with respect to a number of characteristic elements (90) derived from reference images (66) of semiconductor structures, wherein the observation representation and the characteristic elements (90) define a reconstruction of minimal reconstruction error, and a tolerance statistic (92) on defect-free representations (94) of subsets of defect-free observed imaging datasets (30) of wafers (24), wherein each of the defect-free representations and the characteristic elements (90) define a reconstruction of minimal reconstruction error of a subset of the defect-free imaging datasets (30); generating defect information.
The invention relates to a method for processing a body (20), in particular a mirror body of an EUV mirror, in which an ion beam (18) is directed to a surface (21) to be processed of the body (20) in order to remove material from the surface (21) of the body (20). The ion beam (18) is guided along a path (22, 23, 24, 25) over the surface (21), wherein the path (22, 23, 24, 25) comprises a first partial path (22) and a second partial path (23) temporally after the first partial path (22), wherein the ion beam (18) sweeps over the entire surface (21) during the first partial path (22) and wherein the ion beam sweeps over the entire surface (21) during the second partial path (23). The invention also relates to a device and a computer program product for processing a body.
The invention relates to a mirror device, in particular for a microlithographic projection illumination system, having a mirror (20), a sensor apparatus (37, 39, 46, 47) and a control unit (38). The mirror (20) comprises a mirror body (23) and a reflection surface (24) formed on the mirror body (23). The mirror body (23) is provided with cooling channels (27). The sensor apparatus (37, 39, 46, 47) comprises a sensor component (39, 46) thermally coupled to the mirror body (23), and a signal path (48) extending to the control unit (38) for transferring a measurement signal, representing the temperature of the coupling substance, to the control unit (38). The sensor component (39, 46, 48) is arranged in a cavity (27, 40) of the mirror body (23). The sensor component (39, 46) is arranged in a position between the cooling channels (27) and the reflection surface (24). The invention also relates to a method for measuring the temperature of a mirror (20).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
15.
ARRANGEMENT, METHOD AND COMPUTER PROGRAM PRODUCT FOR SYSTEM-INTEGRATED CALIBRATION OF A FACET MIRROR OF A MICROLITHOGRAPHIC ILLUMINATION SYSTEM
The invention relates to an arrangement (100), a method and a computer program product for system-integrated calibration of the facet mirrors (18, 19) of a microlithographic illumination system (20). Calibration beam paths (103, 104) leading via the facet mirrors (18, 19) between a calibration radiation source device (101) and a calibration radiation sensor device (102) are defined, only one pivotable micromirror (18') of the single facet mirror (18) constructed from micromirrors (18') being involved in each of said calibration beam paths. By means of pivoting the micromirror (18') involved in a defined calibration beam path (103, 104), a specific optimum pivot position, whose underlying orientation of the micromirror (18') can also be calculated geometrically, can be found on the basis of the calibration radiation sensor device (102). By means of comparing the calculated orientation with the orientation determined by an orientation sensor at the micromirror (18'), the orientation sensor of the micromirror (18') of the facet mirror (18) can be calibrated.
The invention relates to a device (1) for measuring and/or processing an object (7), in particular a scanning force microscope, comprising: a specimen slide (6) on which an object (7) can be arranged; a working head (9) associated with the specimen slide (6) for measuring or processing the object (7); and a frame (2) having a support element, in particular a table (3), which carries the specimen slide (6), and having an arm (4) which holds the working head (9). According to the invention, a plurality of individually actuatable and distributed clamping devices (12) are associated with the specimen slide (6), the clamping device (12) being designed to clamp, according a vibration behavior of the specimen slide (6), of the object (7) and/or of the working head (9), the specimen slide with a specified force for local reinforcement in order to bring about a local reinforcement of the specimen slide (6) which minimizes vibrations of the working head (9) and the object (7) in relation to one another.
The invention relates to a measuring device (400) for an optical system (300), comprising an input node (K1) for receiving a voltage (V2) dropping in the optical system (300); a capacitive voltage divider (410) which can be connected to the input node (K1) and which comprises a series circuit consisting of at least two capacitors (C1, C2), comprising a measuring capacitor (C2), wherein the capacitive voltage divider (410) is designed to provide a measurement voltage (V3) which drops at the measuring capacitor (C2), said measurement voltage being lower than and directly proportional to the voltage (V2) received at the input node (K1); and a controllable first switch (S1) which is coupled between the input node (K1) and the capacitive voltage divider (410) and which is designed to connect the capacitive voltage divider (410) to the input node (K1) on the basis of a control signal (SE1).
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01R 15/06 - Diviseurs de tension avec des composantes réactives, p.ex. transformateurs à capacité
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
18.
ASSEMBLY FOR ANNEALING AT LEAST A PORTION OF AN OPTICAL ELEMENT
The invention relates to an assembly for annealing at least a portion of an optical element (Mx, 117) for semiconductor lithography, the assembly comprising - an optical element (Mx, 117) having an optically active area (24), and - a device (30, 40, 50, 60, 70) for supplying a temperature-control fluid to at least portions of the optically active area (24). The device (30, 40, 50, 60, 70) comprises a means (31, 51, 61, 71) for producing a defined directed flow in the region of the optically active area (24).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p.ex. par irradiation
COMPUTER IMPLEMENTED METHOD FOR DEFECT RECOGNITION IN AN IMAGING DATASET OF A WAFER, CORRESPONDING COMPUTER READABLE-MEDIUM, COMPUTER PROGRAM PRODUCT AND SYSTEMS MAKING USE OF SUCH METHODS
The invention relates to a computer implemented method for defect recognition in an imaging dataset of a wafer in a charged particle beam system (78) comprising an embedded system (50), the method comprising: i) obtaining an imaging dataset of a wafer; ii) obtaining model data (44, 44', 44'') for a model architecture (42) of a machine learning model (40, 40', 40'') for defect recognition in the imaging dataset of the wafer, the model architecture (42) being implemented in the embedded system (50); iii) transferring the model data (44, 44', 44'') to a programmable memory (48, 48', 48'') of the embedded system (50); iv) applying the machine learning model (40, 40', 40'') to an imaging dataset of a wafer to recognize defects, comprising executing the embedded system implemented model architecture (46) with the transferred model data (44, 44', 44'').
An apparatus (61) for stress-reduced mounting of MEMS-based micromirrors (20) on a metallic support structure (60) comprises a plate (62) extending in a main plane of extent and a plurality of compensation elements (66) which are connected to the plate (62) and have connecting elements (75) which extend across the main plane of extent and a plurality of base elements (76), wherein a respective group with a plurality of connecting elements (75) is connected to a common base element (76), and wherein the apparatus (61) is produced using MEMS technology.
FACET MIRROR, ILLUMINATION OPTICAL UNIT, ARRANGEMENT OF A FACET MIRROR, PROJECTION EXPOSURE APPARATUS AND METHOD FOR PRODUCING A NANOSTRUCTURED COMPONENT
In a microlithographic projection exposure apparatus (1), the second facet mirror (14) of the illumination optical unit (4) is arranged in the region of the wafer plane (9), in particular below the wafer plane (9).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
22.
OPTICAL ASSEMBLY, OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS
The invention relates to an optical assembly (102) for a projection exposure apparatus (1), comprising an optical element (126) and a mount (128) carrying the optical element (126), wherein the mount (128) comprises a mount lower part (136) and a mount upper part (138) releasably connected to the mount lower part (136), wherein the optical element (126) is exclusively connected to the mount upper part (138), and wherein the mount upper part (138) comprises a plurality of spring-elastically deformable bearing feet (246) on which the optical element (126) bears.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
In a method for operating a projection exposure system (10) for microlithography, a mask (40) is repeatedly exposed with an exposure radiation (14) provided by an illumination system (20), and mask structures (42) are imaged on, in each case, one of a plurality of fields (64) of several semiconductor substrates (52). In a period in which the mask is repeatedly exposed, the illumination system is used successively in at least two different illumination settings (62a, 62b) of the illumination system, in which settings in a pupil plane (31) of the illumination system there are illumination distributions (60a, 60b) of the exposure radiation that differ such that a pupil surface (32-15, 32-30, 32-28, 32-22, 32-24, 32-5; 32-17, 32-30, 32-15, 32-28, 32-13, 32-3, 32-22, 32-5, 32-24, 32-7) illuminated in the first illumination setting (62a) has no overlap with a pupil surface (35- 16, 35-29, 35-14, 35-23, 35-4, 35-6; 32-17, 32-16, 32-29, 32-14, 32-13, 32-3, 32- 4, 32-23, 32-6, 32-7) illuminated in the second illumination setting (62b), or has an overlap of at most 90% of the illuminated pupil surface, wherein in each of the two different illumination settings, the pupil surface is completely exposed at least once.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p.ex. correction par deuxième itération d'un motif de masque pour l'imagerie
The invention relates to an assembly of an optical system, comprising at least one mirror with a mirror main body (200, 300), in which there is a fluid channel arrangement with at least one fluid channel (206, 306) through which a fluid can flow, wherein the fluid channel arrangement is coupled to a fluid line system via a detachable flange connection, wherein said flange connection comprises a flange interface (202, 302) formed on the mirror main body and a flange (203, 303) force-lockingly mounted on said flange interface (202, 302), wherein a seal (207, 307) is formed between the flange (203, 303) and the flange interface (202, 302) in order to provide a differential vacuum.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
25.
HOLDING DEVICE FOR AN OPTICAL COMPONENT HAVING AN OPTICAL SURFACE WITH A POLYGONAL BORDER AND HAVING A CYLINDRICAL SUBSTRATE BODY
A holding device (61) serves for holding an optical component (62) having an optical surface with a polygonal border and having a cylindrical substrate body (38) with a cylinder lateral wall (39) with a polygonal cross section corresponding to the border of the optical surface. The holding device (61) has a holding frame (64). At least two bearing bodies (66 to 68) of the holding device (61) serve to make bearing contact with the lateral wall (39) of the substrate body (38) by way of bearing portions (69 to 71) of the lateral wall (39). At least one pressing body (63) of the holding device (61) serves to exert a bearing pressure (FD), which presses the substrate body (38) against the bearing body (66 to 68). The result is a holding device which securely holds optical components having an optical surface with a polygonal border and having a cylindrical substrate body and moreover enables positionally accurate mounting.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
The invention relates to a guide arrangement for guiding a first and a second component (108.8, 108.2) of an imaging device with a first and second guide unit (109.1, 109.2), which function kinematically parallel to one another between the first and the second component in the manner of a parallel guide along a parallel guide device. During operation there is a maximum parallel guide deflection between the first and the second component. At least the first guide unit (109.1) has a four-joint device (109.5) and an intermediate element (109.6) which function kinematically serially to one another between the first and the second component. During operation, a first and a second joint (109.7, 109.8) act on the first component, while a third and a fourth joint (109.9, 109.10) act on the intermediate element, and therefore the four-joint device defines a centre of revolution of the first component with respect to the intermediate element. The intermediate element is articulated on the second component by means of a fifth joint (109.11). The arrangement of the joints is coordinated such that a deflection of the centre of revolution with respect to a first reference plane, which extends perpendicularly to the parallel guide device and through the fifth joint, is at most 0% to 5% of a first distance between the centre of revolution and the fifth joint, which is parallel to the first reference plane in a non-deflected starting state.
G02B 5/09 - Miroirs à facettes multiples ou polygonales
G02B 7/198 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la position du miroir par rapport à son support
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
The invention relates to a mirror device for a microlithographic projection exposure system (10, 22), comprising a frame structure (29) and a mirror body (23) with a plurality of cooling channels (27) which are formed in the mirror body (23), a reflective surface (24) which is formed on the mirror body (23), and a cooling system (30, 32, 33, 35) for generating a coolant flow along the cooling channels (27). The cooling channels (27) extend between an inlet distributor (25) and an outlet distributor (26), and the mirror body (23) is movably suspended on a frame structure (29), wherein the inlet distributor (25) is connected to a coolant store (33) via a first flexible connection line (35) and/or the outlet distributor (26) is connected to the coolant store (33) via a second flexible connection line (32). The mirror device comprises a control unit (34) which supplies a measurement value relating to a state variable to the projection exposure system (10, 22). The control unit (34) analyzes the measurement value in order to generate a control signal, and the cooling system (30, 32, 33, 35) is controlled using the control signal such that the coolant pressure is modified in order to adapt the geometric shape of the reflective surface (24). The invention also relates to a method for operating a mirror device.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
28.
BIPOD, OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS
A bipod (202, 202A, 202B, 204, 206) for adjusting an optical element (102, 102') of an optical system (100) for a projection exposure apparatus (1), having a mechanism (224) which is couplable to the optical element (102, 102') in order to adjust the optical element (102, 102'), a base portion (218), a first tower portion (220), which extends out of the base portion (218), a second tower portion (222), which differs from the first tower portion (220) and likewise extends out of the base portion (218), wherein the mechanism (224) is arranged between the first tower portion (220) and the second tower portion (222), and wherein the first tower portion (220) and the second tower portion (222) are connected to each other facing away from the base portion (218) in order to increase the stiffness of the bipod (202, 202A, 202B, 204, 206).
The invention relates to a method (10) for processing a reference element (14) for an interferometer configured to measure a surface shape of a test object, wherein the reference element (14) is transmissive in relation to a measurement radiation of the interferometer and comprises a first surface (16) that serves as reference surface for the interferometric measurement of the test object. The method (10) comprises the steps of creating (60) a first interferogram by superimposing a first measurement wave (64) created by reflection at the reference surface (16) on a second measurement wave (66) created by interaction with a standard test object (32); creating (70) a second interferogram by superimposing the first measurement wave (64) created by reflection at the reference surface (16) on a third measurement wave (72, 172), the third measurement wave traveling along a beam path (73; 173) that differs from a beam path (67) traveled by the second measurement wave; and evaluating (68, 74) the interferograms and processing (78) the first surface (16) of the reference element (14) and a further surface opposite the first surface (16) on the basis of the evaluation result. The invention also relates to a corresponding device (12) for processing a reference element (14).
G01B 21/04 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative pour mesurer la longueur, la largeur ou l'épaisseur en mesurant les coordonnées de points
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
30.
METHOD TO ADJUST AN ILLUMINATION BEAM PATH WITHIN AN ILLUMINATION OPTICS AND ILLUMINATION OPTICS HAVING AN ADJUSTMENT SYSTEM
A method is presented to adjust an illumination beam path within an illumination optics (4) having a first facet mirror (20) with a plurality of mirror facets (21) being tiltable via respective actuators and further having a second facet mirror (22) with a plurality of micro mirrors (28), each being equipped with a thermal load sensor. The micro mirrors (28) are groupable in micro mirror groups (27), each of these being attributed to one of the plurality of mirror facets (21). In the method, illumination light (16) is guided along a first raw illumination beam path via at least one illuminated mirror facet (21) of the field facet mirror (20) on the one hand, and the micro mirrors (28) of the second facet mirror (22) on the other, to which the illumination light (16) is guided via the at least one illuminated mirror facet (21) of the field facet mirror (20). A thermal load on the illuminated micro mirrors (28) of the second facet mirror (22) is measured. The measured thermal load is compared to nominal data. In case a deviation between the measured thermal load and the nominal data is beyond a given tolerance, the illumination optics (4) is readjusted. Such adjustment method gives the possibility of a reliable and/or fast adjustment result.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
31.
FIBER STRAND FOR A SECTOR HEATER, SECTOR HEATER AND PROJECTION DEVICE
The invention relates to a fiber strand (60) for a sector heater (50) of a projection device (20) for microlithography, and also to a sector heater (50), an arrangement (60) and a projection device (20), each for or comprising such a fiber strand. The fiber strand (60) comprises a plurality of separate guiding fibers (61) and has a connector (62) at the end of the fiber strand (60) provided for attaching to the sector heater (50), in which connector the individual guiding fibers (61) are each secured in defined positions, and at which connector a multi-lens array unit (64) is configured and secured positionally fixedly in a defined position relative to the guiding fibers (61) in such a way that at least one lens (65) each of the multi-lens array unit (64) forms a collimator for one each of the guiding fibers (61).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
32.
MICROMIRROR ARRAY HAVING A NUMBER OF INDIVIDUAL MIRROR ELEMENTS
The invention relates to a micromirror array (10) having a number of individual mirror elements (12), which comprise a reflection surface (14), and, between a carrier plate (18) of the reflection surface (14) and a base plate (32), sensor electrodes and actuator electrodes (80) are provided in respective ring arrangements (26, 28) for moving the reflection surface (14). The actuator electrodes (80) comprise passive movable electrodes (20) on the carrier plate (18) and active stationary electrodes (24) on the base plate (32). A substantially planar spring structure (22, 72) is arranged between the passive movable electrodes (20) on the carrier plate (18) and the active stationary electrodes (24) on the base plate (32), has a substantially rectangular contour (96), and is stretched in the direction of diagonals (66, 68).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
33.
METHOD FOR OPERATING AN OPTICAL COMPONENT, AND OPTICAL COMPONENT
The invention relates to a method for operating an optical component (100) having a mirror element (20), a substrate (30) for carrying the mirror element (20), an actuator device (40) for tilting the mirror element (20) about one or two tilt axes (28), and a sensor device (50) having a sensor electrode structure (52) for detecting a tilt angle (θ) of the mirror element (20) on the basis of capacitance changes. The sensor electrode structure (52) here comprises a plurality of active sensor electrodes (521) and a plurality of passive sensor electrodes. According to the invention, different voltages are applied to the passive sensor electrodes (522) during the operation of the optical component (100).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
The invention relates to a microelectromechanical device (110) comprising a carrier substrate (100) with a substrate surface (100a) and a plurality of MEMS modules (120), wherein each of the plurality of MEMS modules (120) comprises an ASIC layer (140) with an ASIC layer front side (140a) and an ASIC layer back side (140b), a base plate (160) with a base plate front side (160a) and a base plate back side (160b) and a plurality of microelectromechanical components (130) with a component back side (130b), wherein the base plate (160) is arranged on the ASIC layer front side (140a) and the base plate back side (160b) is connected to the ASIC layer front side (140a) and the plurality of microelectromechanical components (130) are arranged on the base plate front side (160a) and the component back sides (130b) of said microelectromechanical components are connected to the base plate front side (160a), wherein the ASIC layer (140) comprises an ASIC for controlling the plurality of microelectromechanical components (130), wherein the ASIC is connected to the microelectromechanical components (130) by way of electrical contacts (144), wherein the plurality of MEMS modules (120) are arranged on the substrate surface (100a) and wherein the ASIC layer back sides (140b) of the plurality of MEMS modules (120) are connected to the substrate surface (100a).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81B 7/04 - Réseaux ou matrices de dispositifs à microstructure semblables
35.
INDIVIDUAL MIRROR OF A PUPIL FACET MIRROR AND PUPIL FACET MIRROR FOR AN ILLUMINATION OPTICAL UNIT OF A PROJECTION EXPOSURE APPARATUS
An individual mirror (11) of a pupil facet mirror (10) of an illumination optical unit (25) of a projection exposure apparatus (1) is mounted so as to be pivotable about two pivot axes (31, 32), wherein a ratio of the pivotability of the individual mirror (11) about the two pivot axes (31, 32) is at least 2:1.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
36.
HEATING ASSEMBLY, OPTICAL SYSTEM AND METHOD FOR HEATING AN OPTICAL ELEMENT
The invention relates to a heating assembly as well as an optical system and a method for heating an optical element in an optical system, in particular in a microlithographic projection exposure system. The heating assembly according to the invention for heating an optical element comprises a light source (101, 201), a device (110, 210) for generating a two-dimensional intensity distribution from light emitted by the light source, a projection lens system (140, 240) for projecting the two-dimensional intensity distribution onto the optical element (150, 250) to be heated, and an image guide (130, 230) for optical transmission of the intensity distribution arranged in the optical path between the device (110, 210) for generating the two-dimensional intensity distribution and the projection lens system (140, 240).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a method for calibrating a mirror array (100) having a plurality of mirror elements (20). For each of the plurality of mirror elements (20), a displacement device (40) for tilting the mirror element (20), at least one mechanical stop (32) for delimiting the tilting of the mirror element (20) and a sensor device for sensing the position of the mirror element (20) are provided. The method comprises the following steps: - sensing stop positions of the individual mirror element (20); - generating a spring geometry for the at least one mechanical stop (32) in order to generate a soft stop in an end stop region; - reducing a motor constant of the displacement device (40) in the end stop region; - applying an identical voltage in the end stop region between the contact partners or similar voltages at the respective contact partners.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
38.
ARRANGEMENT AND METHOD FOR CALIBRATING A MIRROR ARRAY
The invention relates to an arrangement (100) for calibrating a mirror array (30) having a plurality of mirror elements (34). The arrangement (100) comprises a detection light device (40) and a detection device (60). The detection light device (40) comprises at least one detection light source (41, 42, 43, 44, 45, 46) that is designed to generate a detection light beam (50) that is directed to a reflection surface (36) of the mirror elements (34) of the mirror array (30). The detection device (60) comprises a first detector array (62) having a plurality of detectors that are designed to detect the angular positions of the individual mirror elements (34) of the mirror array (30) based on temperature changes and/or electric currents generated by a detection light beam (52) reflected from the mirror elements (34) of the mirror array (30).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
39.
METHOD FOR SINGULATING A WAFER, AND SUITABLE DEVICE
The invention relates to a method for singulating a wafer (100) having a first surface (100a) and a second surface (100b) opposite the first surface (100a), the method comprising the following steps: bringing the wafer (100) into contact with a protective device (120) having one or a plurality of carrying structures (122), such that the first surface (100a) of the wafer (100) is in contact with the plurality of carrying structures (122), singulating the wafer (100) that is in contact with the protective device (120) into a plurality of chips (180a, 180b), and removing (440) the chips (180a, 180b) from the wafer (100) that is in contact with the protective device (120). The invention furthermore relates to a protective device (120) having one or a plurality of carrying structures (122) for temporarily carrying a wafer (100), the protective device being configured to be used in a method according to the invention.
The invention relates to a micro-electromechanical device (110) comprising a support substrate (100) with a substrate surface (100a) and multiple MEMS modules (120), wherein each module comprises an ASIC layer (140) with an ASIC layer front face (140a) and an ASIC layer rear face (140b), a base (160) with a base front face (160a) and a base rear face (160b), and multiple micro-electromechanical components (130) with component rear faces (130b). The base (160) is arranged on the ASIC layer front face (140a), and the base rear face (160b) is bonded to the ASIC layer front face via electric contacts (144). The components (130) are arranged on the base front face (160a), and the component rear faces (130b) thereof are connected to the base front face. The contacts (144) are partly surrounded by a protective frame (195) which is arranged between the base (160) and the ASIC layer (140). The ASIC layer (140) has an ASIC in order to actuate the components (130), wherein the ASIC is electrically connected to the components using some of the contacts (144). The modules (120) are arranged on the substrate surface (100a), and the ASIC layer rear faces (140b) of the modules are connected to the substrate surface.
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
41.
MICROMIRROR ARRAY WITH RESILIENTLY MOUNTED INDIVIDUAL MIRROR ELEMENTS
The invention relates to a micromirror array (10) having a number of individual mirror elements (12) which are actuatable independently of one another, which are arranged as a field and which are each movable by way of an actuator system, more particularly actuator electrodes (38), wherein the individual mirror elements (12) each have a reflection surface (30). A spring plane (34) in which at least one spring element (52) supporting the individual mirror element (12) about a vertically displaced pivot point (90) is accommodated extends below the reflection surface (30) of the individual mirror elements (12), the spring element supporting the individual mirror element (12) in the case of movements about an X-axis (14) and/or a Y-axis (16).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
42.
ILLUMINATION SYSTEM, RADIATION SOURCE APPARATUS, METHOD FOR ILLUMINATING A RETICLE, AND LITHOGRAPHY SYSTEM
The invention relates to an illumination system (30) for a lithography system, in particular for a projection exposure apparatus (100, 200), for illuminating a reticle (106, 203) of the lithography system with a used radiation (2) from a radiation source apparatus (1), comprising an optics device (31) having at least one optical element (32) and at least one mixing device (7). According to the invention, an interface device (8) is provided for input coupling a plurality of individual radiations (4), which form the used radiation (2), into the mixing device (7), wherein a source étendue (33) of the radiation source apparatus (1) fills at least 50 percent, preferably at least 80 percent, of an optics étendue (34) of the optics device (31) and/or mixing device (7).
INTERMEDIATE PRODUCT FOR PRODUCING AN OPTICAL ELEMENT FOR A PROJECTION EXPOSURE APPARATUS, OPTICAL ELEMENT FOR A PROJECTION EXPOSURE APPARATUS, METHOD FOR PRODUCING AN INTERMEDIATE PRODUCT, AND METHOD FOR PRODUCING AN OPTICAL ELEMENT
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
45.
DEVICE AND METHOD FOR SENSOR-BASED MEASUREMENT OF CHEMICAL AND/OR PHYSICAL PROPERTIES OF AN ADHESIVE LAYER AND/OR OF A MEDIUM IN CONTACT WITH THE ADHESIVE LAYER, AND METHOD FOR PRODUCING A CORRESPONDING DEVICE AND METHOD FOR SENSORBASED MEASUREMENT
Device (200) for sensor-based measurement of chemical and/or physical properties of an adhesive layer (203) in an apparatus for semiconductor technology (100), comprising one first element (201) to be adhesively bonded, one second element (202) to be adhesively bonded, an adhesive layer (203) integrally connecting the first element (201) to be adhesively bonded and the second element (202) to be adhesively bonded, by way of a first boundary surface (204) and by way of a second boundary surface (220), respectively, and one first sensor unit (205), characterized in that the one first sensor unit (205) is arranged in or on the adhesive layer (203) at least in part, with the result that all regions of the one sensor unit (205) used to measure the chemical and/or physical properties of the adhesive layer (203) have at least one boundary surface (222), formed in reciprocal adhesively connecting fashion, to the adhesive layer (203).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
The invention relates to a method for thermally stabilizing an adhesive connection (37) between two components (Mx, 117, 33, 38, 34) of an optical assembly (30.1, 30.2, 30.3), comprising the following method steps: - establishing the adhesive connection (37) between the components (Mx, 117, 33, 38, 34), - curing the adhesive (36), annealing the adhesive (36) to increase the degree of curing and the temperature of the glass transition region of the adhesive (36). The invention also relates to an optical assembly (30.1, 30.2, 30.3) having an optical element (Mx, 117) and a solid-state actuator (38) connected to the optical element (Mx, 117) by means of an adhesive connection (37), wherein the solid-state actuator (38) is biased such that the optical element (Mx, 117) is in a zero position.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
47.
DRIVE DEVICE, OPTICAL SYSTEM AND LITHOGRAPHY APPARATUS
A drive device (100) for driving at least one actuator (200) for actuating an optical element (310) of an optical system (4, 10), comprising an end stage (110), which is configured to boost an input voltage (V1) using a quiescent current (I1) of the end stage (110) to a drive voltage (V2) for the actuator (200), and a supply device (120), which is configured to adjust the quiescent current (I1) for the end stage (110) depending on a specific dynamics request (DA) for the end stage (110).
H03F 3/345 - Amplificateurs de courant continu dans lesquels tous les étages sont couplés en courant continu comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
G02B 5/09 - Miroirs à facettes multiples ou polygonales
G02B 7/08 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles avec mécanisme de mise au point ou pour faire varier le grossissement adaptés pour fonctionner en combinaison avec un mécanisme de télécommande
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 27/09 - Mise en forme du faisceau, p.ex. changement de la section transversale, non prévue ailleurs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
The present application relates to a method and a device for correcting at least one image error when scanning a charged particle beam of a scanning particle microscope over a sample, the method comprising the steps of: (a) dividing a scanned region of the charged particle beam into at least two partial regions, with each of the at least two partial regions containing at least one structure element; (b) determining a correction value for the at least one structure element with regards to a target position of the at least one structure element for each of the at least two partial regions; and (c) correcting a beam deflection of the charged particle beam for at least one of the at least two partial regions using the determined correction value.
Method of characterizing a fault in a scanning electron microscope (100), wherein the scanning electron microscope (100) is suitable for analysing and/or processing a sample (10), especially a lithography mask, with the aid of an electron beam (106), wherein the method has the following steps: a) putting (Si) the scanning electron microscope (100) in an equilibrium state, b) introducing (S2) a trigger event into the scanning electron microscope (100) that disrupts the equilibrium state, c) detecting (S3) a response behaviour of the scanning electron microscope (100) to the trigger event, and d) comparing (S4) the response behaviour detected with an expected response behaviour for characterization of the fault.
The invention relates to a device (30) for applying a fluid (38) onto at least one surface (32) of a substrate (31), wherein the device (30) comprises a spraying array (36) with at least two spraying units (40) for applying the fluid (38). The device is characterised in that the device (30) is designed such that a nozzle (42) of at least one spraying unit (40) of the spraying array (36) and the substrate surface (32) of the component (50) can be moved relative to one another in at least three degrees of freedom. The invention also relates to a method for applying a fluid (38) to develop a coating (33) on at least one surface (32) of a substrate (31), wherein the device (30) comprises a spraying array (36) with at least two spraying units (40) for applying the fluid (38) and a control unit (47) for controlling the spraying array (36). The method is characterised in that a nozzle (42) of the at least one spraying unit (40) and the substrate surface (32) can be moved relative to one another in at least three degrees of freedom during application of the fluid (38). Furthermore, the invention relates to a component (50) of a system in semiconductor technology (1, 101) with a structure (35), wherein the structure (35) was developed by means of the aforementioned method.
B05B 1/14 - Buses, têtes de pulvérisation ou autres dispositifs de sortie, avec ou sans dispositifs auxiliaires tels que valves, moyens de chauffage avec des filtres placés dans ou à l'extérieur de l'orifice de sortie
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
B05B 12/10 - Aménagements de commande de la distribution; Aménagements de réglage de l’aire de pulvérisation sensibles à l'état du liquide ou d'un autre matériau fluide expulsé, du milieu ambiant ou de la cible sensibles à la température ou à la viscosité du liquide ou d'un autre matériau fluide expulsé
51.
METHOD, DEVICE, AND COMPUTER-IMPLEMENTED METHOD FOR INSPECTING A COMPONENT, IN PARTICULAR A COMPONENT OF A LITHOGRAPHY SYSTEM, AND LITHOGRAPHY SYSTEM
The invention relates to a method for inspecting a component (2), in particular a component (2) of a lithography system, wherein - at least one inspection area (6) of the component (2) is illuminated with a search beam (5) in a darkroom (3); and - the inspection area (6) is inspected for the presence of at least one defect (12); wherein - if at least one defect (12) is present, the at least one defect (12) is characterised. According to the invention: - at least one image recording (9) of the inspection area (6) is recorded by means of a camera device (7), wherein - a relative position (10a) and orientation (10b) of the camera device (7) relative to the component (2) is determined at the time the image recording (9) of the inspection area (6) is recorded; and - the inspection area (6) is inspected for the presence of at least one defect (12) on the basis of the image recording (9); wherein - if at least one defect (12) is present, the at least one defect (12) is characterised on the basis of the image recording (9).
G01N 21/94 - Recherche de souillures, p.ex. de poussières
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01M 11/00 - Test des appareils optiques; Test des structures ou des ouvrages par des méthodes optiques, non prévu ailleurs
G01N 21/33 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
iiiiii) have at least two different neutral tilt positions in a range around a mean value of a total tilt angle range. The result is a facet mirror assembly having reduced requirements in respect of a tilt actuator system of the facet mirror assembly.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An optical system (100) for a lithography machine (1), comprising a circuit board (200) that is made of a composite material (210), wherein a vacuum-tight housing (220) is formed by the composite material (210) in an interior of the circuit board (200) in which interior a number of active and/or passive components (231, 232) are arranged.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
55.
METHOD FOR DISTORTION MEASUREMENT AND PARAMETER SETTING FOR CHARGED PARTICLE BEAM IMAGING DEVICES AND CORRESPONDING DEVICES
A method for determining a measure of an image distortion of a charged particle beam imaging device (500) is provided. The method comprises providing a plurality of images of a region of a sample using the charged ion beam device (500), and determining the measure of the image distortion based on displacements of corresponding objects between the plurality of images. A method of setting one or more parameters of a charged particle beam imaging device (500) based on a measure of the image distortion as well as corresponding devices and systems are also provided.
A method for checking a lithography mask (100) for a repair of the lithography mask (100), the lithography mask (100) having a plurality of edges (110) between partial regions of the lithography mask (100) and the object of the repair lying in an adjustment of a profile (VER, VER0, VER1) of a selected edge (111-113) in a repair portion (121-123) of the selected edge (111-113), comprises: a) capturing (S1) an image representation (IMG) of a repair region (130) of the lithography mask (100) comprising the repair portion (121-123) of the selected edge (111-113), b) determining (S2) the profile (VER, VER0, VER1) of the selected edge (111-113) in the repair portion (121-123) on the basis of the captured image representation (IMG) of the repair region (130), b1) determining a reference profile (REF, REF0, REF1) on the basis of a profile of an edge (110, 110', 113A, 113B) corresponding to the selected edge (111- 113), the corresponding edge (113A, 113B) being an edge (110, 110') which should not be repaired or a portion (113A, 113B) of the selected edge (111-113) which should not be repaired, the corresponding edge (110, 110', 113A, 113B) being determined on the basis of the captured image representation (IMG) of the repair region (130), and c) comparing (S3) the determined profile (VER, VER0, VER1) of the selected edge (111-113) with a reference profile (REF, REF0, REF1).
The invention relates to an optical system (100) for a projection exposure apparatus (1), the optical system comprising a first component (102), a second component (104) and a compensation device (200, 300) which is arranged between the first component (102) and the second component (104), the compensation device (200, 300) comprising connecting portions (212, 214, 216, 218, 230, 232, 234, 236, 312, 314, 318, 320) which function as solid-body articulations and are elastically deformable in order to adapt the compensation device (200, 300) to a tilting of the second component (104) relative to the first component (102) about a first spatial direction (x) and/or about a second spatial direction (y) which differs from the first spatial direction (x), the compensation device (200, 300) comprising a fastening ring (202, 302) and an inner ring (204, 304) which surrounds the fastening ring (202, 302), the inner ring (204, 304) being connected to the fastening ring (202, 302) by means of inner connecting portions (212, 214, 216, 218, 312, 314), and the inner ring (204, 304) being tiltable relative to the fastening ring (202, 302) about a first tilting axis (228, 316) by means of an elastic deformation of the inner connecting portions (212, 214, 216, 218, 312, 314).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
58.
RESIDUAL GAS ANALYZER, PROJECTION EXPOSURE APPARATUS COMPRISING A RESIDUAL GAS ANALYZER, AND METHOD FOR RESIDUAL GAS ANALYSIS
The invention relates to a residual gas analyzer, in particular for analyzing a residual gas in an EUV projection exposure apparatus (10, 22), comprising a mass spectrometer (27) and an admission device (29, 34) for admitting ionized constituents of the residual gas from a vacuum environment (25) into the mass spectrometer (27). The admission device (29, 34) comprises an ion decelerator (29), with the ion decelerator (29) having an adjustable deceleration voltage in order to subject the ionized constituents to selection with respect to kinetic energy before being transferred into the mass spectrometer (27). The invention also relates to a projection exposure apparatus comprising such a residual gas analyzer, and a method for residual gas analysis.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
59.
RESIDUAL GAS ANALYSER, PROJECTION EXPOSURE APPARATUS COMPRISING A RESIDUAL GAS ANALYSER AND METHOD OF RESIDUAL GAS ANALYSIS
Residual gas analyser, especially for analysing a residual gas in a microlithography projection exposure apparatus, comprising a mass spectrometer (27) and an admission device (28, 29, 24) for admitting constituents of the residual gas from a vacuum environment (25) into the mass spectrometer (27). The admission device (28, 29, 24) comprises a switchable ion source (28, 41). The ion source (28, 41) in a first switching state allows ionized constituents of the residual gas to pass through. The ion source (28, 41) in a second switching state ionizes neutral constituents of the residual gas. The invention also relates to a projection exposure apparatus comprising such a residual gas analyser and to a method of residual gas analysis.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/06 - Dispositifs électronoptiques ou ionoptiques
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
60.
DEVICE AND METHOD FOR DETERMINING AN ACCURACY OF A CONCAVE MIRROR
The invention relates inter alia to a measuring device (1) for determining an accuracy of a surface region (11) of a reflection surface (10) of a concave mirror (12) having a first focus (14) and a second focus (16) and an optical axis (18) running through the first focus and the second focus, comprising: a light source (13) for providing a measurement beam (130); an input beam splitter (15) for splitting the measurement beam (130) into a reference beam (151) and an object beam (152); an input lens element (17) for focusing the object beam (152) on a focal point (19); a mount for arranging the concave mirror (12) in a position in which the focal point (19) and the first focus (14) coincide and in which a central ray of the object beam (152) intersects the optical axis (18), with the object beam (152) being reflected at the surface region (11) and focused on the second focus (16); an output beam splitter (23) for superimposing the reference beam (151) and the reflected object beam (152) to form an interference beam (230); and a detector (25) for detecting the interference beam (230).
The invention relates to a measuring assembly (1) for determining at least one distance between a first and a second element (2, 3), wherein the first element is designed to be translucent as a measuring matrix and has a semi-reflective first surface (7), wherein the second optical element (3) is designed as a EUV mirror and has an at least semi-reflective second surface (8), and wherein the first surface (7) lies opposite the second surface (8) at the distance two be detected, with a light beam source (13) and a light beam sensor (21), wherein a light beam (14) generated by the light beam source (13) is coupled into the first optical element (2) by a surface (11) that is different from the first surface (7), in such a way that a first partial light beam (19) is reflected by the first surface (7) and a second partial light beam (116) passing through the first surface (7) is reflected by the second surface (8) and each back into the first optical element (2), and wherein the light beam sensor (21) is arranged in such a way that it detects both partial light beams (19, 16) in order to determine the distance according to the detected partial light beams (19, 16)
G01B 11/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
METHOD FOR CHARACTERIZING A DIFFRACTIVE OPTICAL ELEMENT, AND METHOD FOR PRODUCING A DIFFRACTIVE OPTICAL ELEMENT WITH IMPLEMENTATION OF THE CHARACTERIZATION METHOD
A diffractive optical element (DOE) has first and second structure portions for specifying a first and a second optical path length for used radiation incident on the DOE, with the path lengths differing from one another. The first and the second structure portions appear alternately on a used surface of the DOE. A raw DOE is initially provided (10) when characterizing the diffractive optical element. Subsequently, interrelated first and/or second structure portions on the raw DOE are determined and interrelated first isolation structure portions, which are completely isolated from other first structure portions by way of second structure portions, and/or interrelated second isolation structure portions, which are completely isolated from other second structure portions by way of first structure portions, are ascertained therefrom. During the production of a correspondingly characterized DOE, at least one contact component can be applied to the raw DOE for the purpose of eliminating unwanted isolations between the structure portions. As a result, an option is developed for the production of diffractive optical elements with more precise diffraction, which in turn can be used when characterizing a surface shape of an optical surface of an optical element.
The invention relates to a projection exposure apparatus (1, 101) having a heating device (40) for heating at least one element (Mx, 117) of the projection exposure ap- paratus (1, 101) by means of electromagnetic radiation, the heating device (40) comprising an illumination optical unit (41) having a housing (42) and at least one optical element, arranged within the housing (42), for influencing the electromagnetic radiation (43.1, 43.2, 43.3, 62, 82.1, 82.2). Here, the at least one optical element (43.1, 43.2, 43.3, 62, 82.1, 82.2) is fixed within the housing (42) by way of at least one elastic element (45.1, 45.2, 45.3, 65, 83).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
64.
APPARATUS AND METHOD FOR PROVIDING SENSOR DATA OF AN OPTICAL SYSTEM, OPTICAL SYSTEM AND LITHOGRAPHY APPARATUS HAVING AN OPTICAL SYSTEM
An apparatus (100) for providing sensor data from a number N, with N ≥ 1, of sensors (301-30N) of an optical system (4, 10) of a lithography apparatus (1), comprising an analogue-to-digital converter (500), which is configured to convert an analogue signal sequence (AF), which is provided via a number N of channels (K1-KN) and includes a number N of analogue sensor signals (A1-AN) from the number N of sensors (301-30N) of the optical system (4, 10), into a digital signal sequence (DF) including N digital sensor signals (D1-DN), and a digital filter device (600) connected downstream of the analogue-to-digital converter (500), wherein the analogue-to-digital converter (500) and the digital filter device (600) have the same frequency-synchronized system clock and the digital filter device (600) is configured to filter the N digital sensor signals (D1-DN) of the digital signal sequence (DF) in a channel-specific manner for providing and storing a respective filtered digital sensor signal (F1-FN) for each of the N channels (K1-KN).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a pin (30) for a tensioning system, comprising an adapter (32) which corresponds to the tensioning system and is mounted in a floating manner in a receptacle (42) in a housing (41) of an intermediate piece (40), wherein the adapter (32) is guided without lubricant in the housing (42). Furthermore, the invention relates to a component (80) which is equipped with corresponding pins (30).
B23Q 1/00 - Eléments composant la structure générale d'un type de machine, et plus spécialement gros éléments fixes
66.
LENS ELEMENT FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS DESIGNED FOR OPERATION IN THE DUV, AND METHOD AND ARRANGEMENT FOR FORMING AN ANTIREFLECTION LAYER
The invention relates to a lens element for a microlithographic projection exposure apparatus designed for operation in the DUV, and a method and an arrangement for forming an antireflection layer. In accordance with one aspect, in the case of a lens element (100) according to the invention, an antireflection layer (102, 302) is formed on a lens substrate, the antireflection layer (102, 302) comprising a first material of relatively lower refractive index and a second material of relatively higher refractive index, and a mixture ratio between the first material and the second material varying in a lateral direction and/or in a vertical direction.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
C23C 14/22 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le procédé de revêtement
G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
A mirror for a projection exposure apparatus has a spectral filter, embodied as a grating structure (30), for light reflected by the mirror. The grating structure (30) has at least two grating levels and hence specifies at least two optical path lengths for the reflected light. An overall flank portion (35) of the grating structure (30) is arranged in each case between grating level structure portions (33, 34) of the grating structure (30), which each specify adjacent grating levels. A lower limit spatial wavelength over a defect-free partial flank portion of the overall flank portion (35) making up at least an extent of 90% of the overall flank portion (35) is in the range from 0.01 µm to 1 µm exclusive. An upper limit spatial wavelength over the defect-free partial flank portion of the overall flank portion (35) is in the range from 0.1 µm to 100 µm exclusive. An effective roughness of the defect-free partial flank portion above the lower limit spatial wavelength and below the upper limit spatial wavelength is less than 10 nm. A protective layer is arranged on the grating structure (30). This results in a mirror with an improved service life.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a method for producing a base element of an optical element (Mx, 117) for semiconductor lithograpy, comprising the following steps: firstly, producing a material mixture comprising at least two material components; secondly, producing an intermediate element from the material mixture, wherein the material mixture comprises at least one first material component made of the material of the later base element, and wherein the material mixture comprises a second material component that functions to mechanically stabilise the intermediate element; thirdly, producing the base element from the intermediate element via temporary heating and at least partial removal of the second material component. The invention also relates to an optical element (Mx, 117) produced using the method according to the invention, a base element, an optical element (Mx, 117), and a projection exposure system for semiconductor lithography (1, 101) provided with the optical element (Mx, 117).
C03B 19/06 - Autres méthodes de façonnage du verre par frittage
C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p.ex. quartz
69.
OPTICAL ELEMENT WITH VIBRATION-REDUCING SECTIONS OF FLUID LINES, PROJECTION EXPOSURE SYSTEM, AND METHOD FOR PRODUCING A BASE ELEMENT OF AN OPTICAL ELEMENT
The invention relates to an optical element (Mx, 117) with a base element (30) and at least one fluid line (32), formed in the base element (30), for guiding a temperature-control fluid (38). At least some sections of the fluid line (32) are designed in such a way that the fluid line minimises the excitation of mechanical vibrations by the temperature-control fluid (38) and/or dampens mechanical vibrations in the temperature-control fluid (38). The invention also relates to a projection exposure system and to a method for producing a base element for an optical element (Mx, 117) of this type using an additive manufacturing method, comprising the following method steps: - producing at least one partial element of the base element with a polyjet method, wherein the material mixture used to produce the partial element has a carrier material with at least one monomer and/or oligomer and a structural material with a glass powder; polymerising the partial element; heating the polymerised partial element in order to thermally bond the glass powder components and to combust the polymer; sintering the partial element.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
70.
OPTICAL ASSEMBLY, PROJECTION EXPOSURE SYSTEM FOR SEMICONDUCTOR LITHOGRAPHY AND METHOD
The invention relates to an optical assembly (30) comprising an optical element (Mx, 117), wherein the optical element (Mx, 117) has a base element (31), and wherein at least one actuator (35) is arranged on the rear side of the base element (31) for the deformation of the base element (31), and wherein the at least one actuator (35) is connected to the rear side of the base element (33) at a first connecting surface and connected to a rear panel (36) at a second connecting surface, wherein the rear panel (36) is mounted exclusively via the actuator (35).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
The invention relates to an optical element (Mx, 117) for a projection exposure system for semiconductor lithography (1, 101) comprising a base element (30) and at least one actuator (40) connected to the base element (30), wherein the actuator (40) is designed as a ring actuator. The invention also relates to a projection exposure system, provided with a corresponding optical element, for semiconductor lithography, and an optical element comprising a sensor for determining the deformation of an optical effective surface, wherein the sensor is designed to detect a signal which allows for a correlation with the deformation of the optical effective surface.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
72.
BASE ELEMENT FOR AN OPTICAL ELEMENT WITH A LINKING SHAPE AND METHOD FOR PRODUCING A BASE ELEMENT OF AN OPTICAL ELEMENT AND PROJECTION EXPOSURE SYSTEM
The invention relates to a base element (30) for an optical element (Mx, 117), characterised in that the base element (30) comprises a linking shape (49,80,88,89,90,91,92,93) produced by means of an additive manufacturing method. The invention also relates to a projection exposure system (1, 101) comprising a base element (30). The invention further relates to a method for producing a base element (30) for an optical element (Mx, 117) using an additive manufacturing method, comprising the following method steps: producing at least one sub-structure of a predetermined structure of the base element (30), designed as a linking shape (49,80,88,89,90,91,92,93), using a polyjet method (71), wherein the material mixture used to produce the linking shape (49,80,88,89,90,91,92,93) contains a carrier material with at least one monomer and/or oligomer and a structural material with a glass powder; heating the linking shape (49,80,88,89,90,91,92,93) polymerised in the preceding method step (72) in order to thermally bond the glass powder components and combust the polymer generated in the first method step; sintering the linking shape (49,80,88,89,90,91,92,93).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
73.
METHOD FOR CONTROLLING A POSITION OF AN OPTICAL COMPONENT OF A LITHOGRAPHY SYSTEM
s sscscscscscscss) by at least 10 %. An EUV collector results having a higher throughput of usable EUV light to an optical system in a subsequent EUV light path of the EUV projection exposure apparatus.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a screw transmission drive (1), in particular for the reticle stage (100) of a device (200) for lithography applications, comprising a leadscrew (4), which has a power transmission thread and a leadscrew nut (5) which interacts with the power transmission thread, and a controllable drive (2) for rotating the leadscrew (4), wherein the leadscrew nut (5) is connected to a leadscrew flange (10) for connection to a component (104) to be moved relative to the drive; the leadscrew flange (10) has two connection elements (11, 12) for connecting, respectively, to the leadscrew nut (5) and to the component (104) to be moved, the connection elements being connected by six elastically deformable struts (13, 23) of identical length which are fixedly clamped at both ends; the clamping points (23') of the struts (13, 23) at the connection elements (11, 12) are distributed, in two parallel connection planes (20), in pairs at regular intervals over respective connection circles (21) such that each pair of mutually adjacent struts (13, 23) includes an angle; the ratio of the radii of the two connection circles (21) is 0.5, and the connection circles (21) are coaxially located on a common longitudinal axis (14, 24). The invention also relates to a reticle stage (100) and to a device (200) having a reticle stage (100), the reticle stage (100) having a screw transmission drive (1) according to the invention.
F16H 25/22 - Mécanismes à vis avec billes, rouleaux ou organes similaires entre pièces travaillant en conjugaison; Eléments essentiels pour l'utilisation de ces organes
76.
METHOD AND MEASURING ASSEMBLY FOR AN INTERFEROMETRIC DETERMINATION OF THE SURFACE SHAPE OF A TEST OBJECT
The invention relates to a method and a measuring assembly for an interferometric determination of the surface shape of a test object, in particular an optical element of a microlithographic projection exposure system. In a method according to the invention, a test wave produced by diffracting electromagnetic radiation on a computer-generated hologram (CGH) (110, 210, 211, 310, 410) is reflected by the test object (120, 220, 320, 420) as a spherical wave, wherein a sub-region of said spherical wave is reflected back to the test object (120, 220, 320, 420) by a spherical mirror (130, 230, 330, 430) in an autocollimation process and is superimposed with a reference wave which is not reflected on the test object (120, 220, 320, 420), and the surface shape of the test object (120, 220, 320, 420) is determined on the basis of a plurality of interferometric measurements which are taken one after the other and which differ with respect to the spherical wave sub-region reflected by the spherical mirror (130, 230, 330, 430) in the autocollimation process.
An imaging EUV optical unit (24) serves for imaging an object field (5) into an image field (11). The EUV optical unit (24) has a plurality of mirrors (M1 to M4) for guiding EUV imaging light (16) at a wavelength of shorter than 30 nm along an imaging beam path from the object field (5) towards the image field (11). The EUV optical unit (24) has four NI mirrors (M1 to M4). The overall transmission of the NI mirrors (M1 to M4) is greater than 10%. The mirrors (M1 to M4) lead to an overall polarization rotation of no more than 10° along the imaging beam path when linearly polarized EUV imaging light (16) is used. This yields an imaging EUV optical unit with an increased EUV throughput while observing exacting demands on the imaging quality.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 17/06 - Systèmes catoptriques, p.ex. systèmes redressant et renversant une image utilisant uniquement des miroirs
78.
IMAGING EUV OPTICAL UNIT FOR IMAGING AN OBJECT FIELD INTO AN IMAGE FIELD
An imaging EUV optical unit (10) serves for imaging an object field (5) into an image field (11). The optical unit has a plurality of mirrors (M1 to M6) for guiding EUV imaging light (16) at a wavelength shorter than 30 nm along an imaging beam path from the object field (5) to the image field (11). The plurality of the mirrors contains at least two NI mirrors (M5, M6) and at least two GI mirrors (M1 to M4). An overall transmission of the plurality of the mirrors (M1 to M6) is greater than 10%. This yields an imaging EUV optical unit whose usability for an EUV projection exposure apparatus is improved.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
79.
DEVICE AND METHOD FOR TREATING THE SURFACE OF AN OPTICAL ELEMENT OF A LITHOGRAPHY SYSTEM IN AN ATOMIC LAYER DEPOSITION PROCESS OR AN ATOMIC LAYER ETCHING PROCESS
The invention relates to a device (100) for treating the surface (102) of an optical element (101) of a lithography system (1), in particular an EUV lithography system, in an atomic layer treatment process, comprising: a sample holder (110) for holding the optical element (101) during the treatment process; a treatment head (120) with a first outlet (121) for supplying a first precursor fluid (PF1) to a treatment region (102A) on the surface (102) of the optical element (101), a cleaning assembly (123) for removing excess first precursor fluid (PF1) out of the treatment region (102A), and a second outlet (122) for supplying a second precursor fluid (PF2) into the treatment region (102A), wherein the first precursor fluid (PF1) and the second precursor fluid (PF2) are selected in order to carry out an atomic layer deposition process for an atomic layer etching process in the treatment region (102A), and the first or the second precursor fluid (PF1, PF2) is a liquid; and a movement unit (130) which is designed to move the treatment head (120) and/or the sample holder (110) together with the optical element (101) relative to each other such that the first outlet (121), the cleaning assembly (123), and the second outlet (122) are guided one after the other over the treatment region (102A).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B08B 3/00 - Nettoyage par des procédés impliquant l'utilisation ou la présence d'un liquide ou de vapeur d'eau
C23C 18/00 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement; Dépôt par contact
80.
METHOD FOR HEATING AN OPTICAL ELEMENT, AND OPTICAL SYSTEM
The invention relates to: a method for heating an optical element in an optical system, in particular in a microlithographic projection exposure system; and an optical system. In a method according to the invention, a thermal manipulator (210) is used to introduce a heating power into the optical element (200) in order to produce a thermally induced deformation, wherein, before starting operation of the optical system in which useful light impinges on the optical element, said heating power is adjusted with respect to a desired state of the optical element in which a first optical aberration is at least partially compensated, and wherein, after starting operation of the optical system, the heating power is regulated to the desired state depending on the heat load of the useful light impinging on the optical element, wherein the heating power is regulated in such a way that the average temperature of the optical element (200) remains constant up to a maximum deviation of 0.5 K, in particular 0.2 K at the most.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a method for driving an actuator for a component (Mx, 117) of a projection exposure apparatus (1, 101) for semiconductor lithography, comprising the following steps: - characterizing (30) the actuator, - parameterizing (31) an actuator model, - implementing (32) the actuator model in a control structure, - driving (34) the actuator using the actuator model.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H10N 30/00 - Dispositifs piézo-électriques ou électrostrictifs
82.
METHOD FOR COATING A MIRROR SUBSTRATE WITH A MULTILAYER COATING WHICH IS HIGHLY REFLECTIVE TO USEFUL WAVELENGTHS, AND COATING SYSTEM FOR CARRYING OUT SUCH A METHOD
The aim of the invention is to coat a mirror substrate (2) with a multilayer coating which is highly reflective to useful wavelengths and which comprises a plurality of individual layers to be sequentially applied. This is achieved in that a plurality of the individual layers are first applied onto the mirror substrate (2) as part of a coating sequence in order to produce a first partial multilayer coating. The layer thickness resulting from the coating sequence is measured at at least one measurement position, and coating parameters are adapted for a subsequent application step on the basis of measurement data of the measurement. Additional individual layers are applied onto the mirror substrate (2) as part of an additional coating sequence using the adapted coating parameters so as to produce an additional partial multilayer coating in order to complete the multilayer coating. A coating system which can be used for this purpose has a mirror substrate mounting (6), at least one coating source (13, 14) for the coating material, at least one drive (8) for moving the mirror substrate (2) relative to the coating source (13, 14), a thickness measuring device (16), and a control/regulating device (25) which has a signaling connection with the thickness measuring device (16) and a control unit (26) for adapting the coating parameters. In this manner, a coating is produced via which a target surface shape and a target reflectivity of the produced multilayer coating is achieved with a high degree of precision.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
83.
METHOD FOR HEATING AN OPTICAL ELEMENT, AND OPTICAL SYSTEM
The invention relates to: a method for heating an optical element in an optical system, in particular in a microlithographic projection exposure system; and an optical system. In a method according to the invention, a heating power is introduced into the optical element using a thermal manipulator, wherein said heating power is adjusted to a set of desired values, wherein said set of desired values is adjusted in order to produce a thermally induced deformation depending on a first optical aberration to be compensated, and wherein the set of desired values is adjusted also taking into account the effect of introducing the heating power on a second optical aberration which is caused by useful light impinging on the optical element during operation of the optical system. To this end, the thermally induced deformation profile is preferably co-optimised, wherein optionally the zero-crossing temperature ZCT of the substrate material can also be included in the co-optimisation as a parameter to be optimised.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An illumination optical unit (1) is part of a mask inspection system for use with EUV illumination light (3). A hollow waveguide (11) serves to guide the illumination light (3). For the illumination light (3), the hollow waveguide (11) has an entrance opening (12) in an entrance plane (13) and an exit opening (14) in an exit plane (14). An input coupling mirror optical unit (10) is disposed upstream of the hollow waveguide (11) in the beam path of the illumination light (3) and has at least one mirror (IL1) for imaging a source region (6) of an EUV light source (5) into the entrance opening (12) of the hollow waveguide (11). An output coupling mirror optical unit (16) serves to image the exit opening (14) of the hollow waveguide (11) into an illumination field (4). This yields an illumination optical unit whose use efficiency for the EUV illumination light has been optimized.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
85.
METHOD FOR OPERATING A PROJECTION EXPOSURE SYSTEM, AND PROJECTION EXPOSURE SYSTEM
The invention relates to a method for operating a projection exposure system for microlithography, comprising: heating at least one optical element of the projection exposure system by applying heat radiation to a surface (30) of the optical element in an operating pause, in which exposure radiation is not applied to the surface (30) of the optical element. When heating during the operating pause, an inhomogeneous temperature distribution (33a-c) is generated on at least one section (TBa-c) of the surface (30) of the optical element, which temperature distribution reduces aberrations of the projection exposure system, wherein the inhomogeneous temperature distribution (33a-c) is produced by radiating the heat radiation into the section (TBa-c) with at least one continuous heat radiation profile formed by a beam-forming element. The invention also relates to a projection exposure system for microlithography, comprising: at least one optical element, a heating device for applying heat radiation to a surface (30) of the optical element, wherein the heating device is designed to apply the heat radiation to the surface (30) of the optical element in an operating pause in which exposure radiation is not applied to the surface (30) of the optical element. The heating device is designed to produce an inhomogeneous temperature distribution (33a-c) on at least one section (TBa-c) of the surface (30) of the optical element in order to reduce aberrations of the projection exposure system when heating during the operating pause. For this purpose, the heating device comprises at least one heat radiation source for generating heat radiation and at least one beam-forming element for generating a continuous heat radiation profile.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
86.
COMPONENT FOR A PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY AND PROJECTION EXPOSURE APPARATUS
The invention relates to a component (50, 70) for a projection exposure apparatus (1, 101) for semiconductor lithography comprising at least two structural parts (51, 55, 71, 75) which are connected to one another, it being possible for the structural parts (51, 55, 71, 75) to be positioned relative to one another in at least one plane and the position and alignment being determined via two contact faces (53, 54, 73, 74), In this respect, the connection has a form-fitting design in the at least one plane. Furthermore, the invention relates to a projection exposure apparatus (1, 101) for semiconductor lithography.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
F16B 2/02 - Brides ou colliers, c. à d. dispositifs de fixation dont le serrage est effectué par des forces effectives autres que la résistance à la déformation inhérente au matériau dont est fait le dispositif
87.
DUAL BEAM SYSTEMS AND METHODS FOR DECOUPLING THE WORKING DISTANCE OF A CHARGED PARTICLE BEAM DEVICE FROM FOCUSED ION BEAM GEOMETRY INDUCED CONSTRAINTS
A method for obtaining a sequence of cross-section images of a measurement site of a wafer parallel to one another, comprising the following steps: la) providing a focused ion beam (FIB) column and a charged particle beam (CPB) imaging column in a coincidence arrangement, in this coincidence arrangement a FIB optical axis of the FIB column and a CPB optical axis of the CPB imaging column coinciding at a wafer surface and forming an arrangement angle GFE between the FIB optical axis and the CPB optical axis; lb) in the coincidence arrangement removing a cross section surface layer of measurement site of a wafer using the FIB column to make a new cross section accessible for imaging; lc) reducing a working distance between the CPB imaging column and the wafer surface in a direction along the axis of the CPB imaging column; ld) imaging the new cross section at the measurement site of the wafer with the CPB imaging column at the reduced working distance and thus not in the coincidence arrangement; le) increasing the working distance between the CPB imaging column and the wafer surface in the direction along the axis of the CPB imaging column until the coincidence arrangement is reached.
00 in the ultraviolet range from 300 nm to 450 nm comprises a multiplicity of lens elements which are arranged between the object plane (OS) and the image plane (IS) along an optical axis (AX) and which are embodied so that a pattern arranged in the object plane is able to be imaged into the image plane by means of the lens elements with a reducing imaging scale |β| < 1 in the case of an image-side numerical aperture NA. The lens elements comprise at least one flint lens element made of a first material with a relatively low Abbe number and at least one crown lens element made of a second material with a higher Abbe number relative to the first material. For a parameter SSP with (Formula) the condition SSP < 0.1 nm-2200.
G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
G02B 13/22 - Objectifs ou systèmes de lentilles télécentriques
G02B 13/24 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous pour reproduire ou copier à de courtes distances de l'objet
G02B 9/60 - Objectifs optiques caractérisés à la fois par le nombre de leurs composants et la façon dont ceux-ci sont disposés selon leur signe, c. à d. + ou — ayant uniquement cinq composants
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
89.
MIRROR, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM
The invention relates to a mirror, in particular for a microlithographic projection exposure system, having an active optical surface, a reflective layer system for reflecting electromagnetic radiation of a working wavelength which is incident on the active optical surface, a mirror substrate (105, 205, 305) which is made of a mirror substrate material and in which structures (106, 206, 306) are arranged that differ from the surrounding mirror substrate material in terms of the refractive index, and a layer stack which is located between the mirror substrate (105, 205, 305) and the reflective layer system, wherein the layer stack has an absorber layer (110, 210, 310), an AR layer (120, 220, 320), and a smooth layer (130, 230, 330) one after the other in a stacking direction running from the mirror substrate (105, 205, 305) to the reflective layer system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
An optical element (OE) for incorporation into a holding device for the purpose of forming an assembly (BG) for constructing an optical system comprises a body (K) which is transparent to light from a used wavelength range, on which a first light passage surface (LF1) and an opposing second light passage surface (LF2) are formed. Each of the light passage surfaces (LF1, LF2) has an optical used region (NB1, NB2) provided for arrangement in a used beam path of the optical system and an edge region (RB1, RB2) located outside of the optical used region and designated as an engagement region for holding elements (HE) of the holding device. Each light passage surface is prepared to optical quality in the optical used region (NB1, NB2) and has a surface shape designed in accordance with a used region specification specified by the function of the optical element (OE) in the used beam path. Light deflection structures (LUS1) with a geometrically defined surface design are formed in the edge region (RB1) of at least one of the light passage surfaces (LF1), and are designed in accordance with an edge region specification which deviates from the used region specification and are configured to deflect portions of light deflected by the light deflection structures into a target region (ZB) outside of the used beam path.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
91.
ILLUMINATION SYSTEM, PROJECTION ILLUMINATION FACILITY AND PROJECTION ILLUMINATION METHOD
An illumination system (ILL) for a microlithography projection illumination facility for illuminating a sample arranged in a region of an object plane (OS) of a downstream projection lens (PO) with illumination light generated from light from a primary light source (LS) is designed as a double-field illumination system for receiving a single light beam coming from the primary light source (LS) and generating therefrom two illumination beams (BS1, BS2), wherein a first illumination beam (BS1) can be guided along a first illumination beam path to a first illumination field (ILF1) arranged outside the optical axis of the projection lens in the exit plane (ES) of the illumination system and at the same time a second illumination beam (BS2) can be guided along a second illumination beam path to a second illumination field (ILF) opposite the first illumination field (ILF1) in relation to the optical axis (AX) and arranged outside the optical axis in the exit plane. The illumination system comprises a refractive pupil-forming unit (PFU) for receiving light from the primary light source (LS) and for generating a two-dimensional intensity distribution in a pupil-forming surface (PUP) of the illumination system, and a refractive field-forming system (FFS) optically downstream of the pupil-forming unit, said field-forming system having a homogenisation unit (HOM) for homogenising the light received from the pupil-forming unit and for splitting the illumination light into the first illumination beam (SB1) and the second illumination beam (SB2).
A catadioptric projection objective for reproducing a pattern arranged in an object plane (OS) of the projection objective in an image plane of the projection objective parallel to the object plane comprises a plurality of optical elements, which comprise lenses and concave mirrors (CM) and are arranged between the object plane (OS) and the image plane (IS) along an optical axis (OA). The projection objective (PO) is designed as a double-field projection objective to reproduce a first effective object field (OF1) arranged outside the optical axis in the object plane along a first projection beam path in a first effective image field (IF1) lying outside the optical axis in the image plane and at the same time to reproduce a second effective object field (OF2), opposite the first object field in relation to the first optical axis, arranged outside the optical axis in the object plane along a second projection beam path (RP2) in a second effective image field (IF2) lying outside the optical axis in the image plane. Each of the projection beam paths has a first deflection unit (ULE1) for deflecting radiation coming from the object plane (OS) to a concave mirror and a second deflection unit (ULE2) for deflecting the radiation coming from the concave mirror in the direction of the image plane (IS). The optical elements form a first objective part (OP1) for reproducing each of the effective object fields (OF1, OF2) of the object plane in a first real intermediate image (IMI1), a second objective part (OP2) for generating a second real intermediate image (IMI2) with the radiation coming from the first objective part (OP1), and a third objective part (OP3) for reproducing the second real intermediate image (IMI2) in the image plane (IS). The concave mirror (CM) of a projection beam path is arranged in the region of a pupil surface (P2) lying between the first and the second intermediate image. The first deflection unit (FM1) is in the optical vicinity of the first intermediate image (IMI1) and the second deflection unit (FM2) is in the optical vicinity of the second intermediate image (IMI2).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 27/09 - Mise en forme du faisceau, p.ex. changement de la section transversale, non prévue ailleurs
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
G02B 5/09 - Miroirs à facettes multiples ou polygonales
An optical system (100) for a lithography apparatus (1), having an arrangement (200) comprising a printed circuit board (210) having at least one flexible region (211) in which a flexible component (230) comprising an integrated circuit (220) is arranged.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 3/36 - Assemblage de circuits imprimés avec d'autres circuits imprimés
The invention relates to a pressure-reducing unit (25), comprising: a helical throttle duct (26a, 26a') for reducing the pressure of a liquid (F), wherein the helical throttle duct (26a, 26a') has a plurality of coils (27) which are connected to one another so as to damp vibrations. The invention also relates to an EUV lithography system (1), comprising: at least one component through which a liquid (F) can flow, wherein the component through which the liquid (F) can flow has at least one pressure-reducing unit (25) which is configured as described further above.
The invention relates to an optical system and to a method for operating an optical system, in particular in a microlithographic projection exposure apparatus. According to one aspect of the invention, an optical system has: at least one mirror (100, 200, 300, 400) comprising an optical active surface (101, 201, 301, 401), a mirror substrate (110, 210, 310, 410) and a reflective layer system (120, 220, 320, 420); and at least one radiant heater (150, 250, 350, 450) for coupling heat radiation (155, 255, 355, 455) into the mirror (100, 200, 300, 400), wherein the mirror has a layer system (130, 230, 330, 430) comprising at least one thermochromic layer for thermal conditioning, wherein said layer system has a degree of absorption which is temperature-dependent for the heat radiation and wherein the layer system for thermal conditioning is arranged between a mirror substrate (110, 210, 310, 410) and a reflective layer system (120, 220, 320, 420) for reflecting useful radiation incident on the mirror.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
96.
METHOD FOR MEASURING AN ILLUMINATION ANGLE DISTRIBUTION ON AN OBJECT FIELD AND ILLUMINATION OPTICS UNIT HAVING AN ILLUMINATION CHANNEL ALLOCATION INTENDED THEREFOR
In order to measure an illumination angle distribution, which is established by means of a multiplicity of illumination channels (16i) of an illumination optics unit, on an object field by means of an obscured projection optics unit, a setpoint pupil lighting (27) of an illumination pupil (28) of the illumination optics unit is initially established. With the aid of the setpoint pupil lighting (27), whether splitting of a measurement pupil lighting into a reflection measurement pupil and a diffraction measurement pupil is necessary is checked. Depending on the result of the check, a reflection measurement pupil lighting (29) and/or a diffraction measurement pupil lighting (30) of the illumination optics unit is established by establishing corresponding illumination channels (16i). The reflection measurement pupil lighting (29) is measured by inserting a reflective object into the object field and/or the diffraction measurement pupil lighting (30) is measured by inserting a diffractive object into the object field. An actual pupil lighting (34) is reconstructed from the measurement data obtained during the measurement (32, 33). This provides a measurement method which is available for a wider application range of illumination angle distributions to be measured during the measurement by means of an obscured projection optics unit.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
97.
TEMPERATURE-INSENSITIVE ACTUATOR AND DEFORMATION MIRROR
The invention relates to an actuator (100) for semiconductor lithography, comprising an actuator element (102) having a first coefficient of thermal expansion and a connection site (103) at its first end for the active adjustment of an optical element (300) along at least one adjustment axis (101), characterized by a compensation element (104), which has a second coefficient of thermal expansion, the sign of which corresponds to that of the first coefficient of thermal expansion, which is oriented coaxially in relation to the adjustment axis (101) and which has a coupling site (110) held stationary in space or stationary in relation to the optical element, and by a connection element (111), by which the actuator element (102) and the compensation element (104) are connected at positions located remote from the connection site (103) and from the coupling site (110). The invention furthermore relates to a deformation mirror.
The present invention relates to an optical arrangement of a microlithographic imaging device, particularly for using light in the extreme UV (EUV) range, comprising a group of optical elements, a support structure (104.2), an active support device (108) and a control device (106). The group of optical elements comprises a plurality N of optical elements (M1 to M6) which are supported on the support structure (104.2) by way of the active support device (108). The active support device (108) comprises an active support unit (108.1, 108.2) for each optical element (M1 to M6) of the group of optical elements, which active support unit is configured to adjustably support the optical element (M1 to M6) on the support structure (104.2) under control device (106) control. The group of optical elements comprises a first subgroup with a plurality M of first optical elements (M2, M4, M5, M6) and a second subgroup with a number K of second optical elements (M1, M3). The control device (106) and a first active support unit (108.1) assigned to the respective first optical element (M2, M4, M5, M6) are configured to adjust the first optical element (M2, M4, M5, M6) in at least one degree of freedom with a maximum control bandwidth which is within a first control bandwidth range. Further, the control device (106) and a second active support unit (108.2) assigned to the respective second optical element (M1, M3) are configured to adjust and/or deform the second optical element (M1, M3) in at least one degree of freedom with a maximum control bandwidth which is within a second control bandwidth range. In this case, the first control bandwidth range is below the second control bandwidth range and spaced apart from the second control bandwidth range by an interval. The interval is at least 50%, preferably at least 100%, further preferably at least 125% of an upper limit of the first control bandwidth range and/or at least 40 Hz to 80 Hz, preferably 50 Hz to 175 Hz, further preferably 75 Hz to 125 Hz.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to an actuator (100) for adjusting an optical element (300) in a lithography device, comprising an electrostatic actuator (101) which has an electrode pair (102) consisting of two electrodes (103, 104) which are at least temporarily mutually spaced. One of the electrodes (103, 104) is connected to a mechanical converter (105) which can be coupled to the optical element (300) and which comprises a lever (106) that is designed to be actuated by the electrostatic force of the electrodes (103) such that the force of the electrostatic actuator (101) is converted into a mechanical actuation force, which is greater than the electrostatic force, by means of the mechanical converter (105) in order to adjust or deform the optical element (300), wherein the mechanical converter (105) is formed as a plate in particular. The invention also relates to a deformation mirror.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/185 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la forme de la surface du miroir
H02N 1/00 - Générateurs ou moteurs électrostatiques utilisant un porteur mobile de charge électrostatique qui est solide
100.
METHOD FOR MEASURING THE ILLUMINATION PUPIL IN A SCANNER TAKING INTO ACCOUNT A MEASUREMENT RETICLE
The present invention relates to a method for characterizing a lithography apparatus. In particular, the present invention relates to a method for characterizing a lithography apparatus configured to cause an obscuration of radiation, and also to a lithography apparatus and to a computer program for carrying out the methods. A method for characterizing a lithography apparatus configured to cause an obscuration of radiation comprises: detecting first substantially undiffracted radiation of the lithography apparatus; detecting first diffracted radiation of the lithography apparatus, wherein the first diffracted radiation was diffracted at a characterization element; determining a diffraction property of the characterization element on the basis at least in part of the first substantially undiffracted radiation and the first diffracted radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
brevets
