An imaging optical unit comprises a plurality of mirrors for imaging an object field in an object plane into an image field in an image plane. An image-side numerical aperture is greater than 0.55. A ratio between an object/image offset and a meridional transverse direction is at least 0.5. A ratio between a working distance between the object plane and a reflection portion, closest to the object plane, of one of the mirrors and the meridional transverse dimension is at least 0.05. The working distance is at least 270 mm. This can yield an imaging optical unit, the use of which is relatively manageable in a projection exposure apparatus, such as for EUV projection lithography.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method for qualifying a mask for use in lithography is proposed. The method includes the following steps: a provision of an apparatus for qualifying a mask, the apparatus comprising an optical system and an evaluation and control device; a detection of at least one first phase difference of light at the mask by use of the optical system and the evaluation and control device; loading the mask; detecting at least one second phase difference of light at the mask by use of the optical system and the evaluation and control device; and implementing a comparison of the first phase difference with the second phase difference by use of the evaluation and control device.
A component for a projection exposure apparatus for semiconductor lithography, comprises an optical element and an actuator, which are force-fittingly connected to each other. The actuator at least locally deforms the optical element. The actuator can be configured to minimize the loss in rigidity at the peripheries delimiting the actuator on the imaging quality. A method for designing a component of projection exposure apparatus is provided.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The present application relates to a method for characterizing a shielding element of a particle beam device for shielding an electric field between a sample position and a particle beam source. The method comprises positioning a means for characterizing the shielding element on a side of the shielding element which is facing the sample position.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01J 37/09 - Diaphragmes; Ecrans associés aux dispositifs électronoptiques ou ionoptiques; Compensation des champs perturbateurs
5.
Microelectromechanical Apparatus with Heating Element
The invention relates to a microelectromechanical apparatus (100, 200) comprising one or more microelectromechanical devices (130) each having a mirror element (134), an actuator (132) for moving the respective mirror element (134), and a heating element (138, 240) for heating the respective mirror element (134), wherein the microelectromechanical apparatus (100) comprises one or more temperature sensors (135, 145, 210, 212) and an electronic system (125, 225), wherein the control electronic system (125, 225) is configured to determine a temperature value of the respective mirror element (134) using the one or more temperature sensors (135) for each mirror element (134), and the electronic system (125, 225) is further configured to adjust a heating power for each of the heating elements (138, 240). The invention further relates to an illumination optical unit (172), to an illumination system (174) and to a projection exposure apparatus (170), each having a microelectromechanical apparatus (100, 200) according to the invention, and to a method for controlling temperatures of a microelectromechanical apparatus (100, 200) in a closed-loop.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
6.
Method for Operating an Optical Component, and Optical Component
The invention relates to a method for operating an optical component (100) having a mirror element (20), a substrate (30) for carrying the mirror element (20), an actuator device (40) for tilting the mirror element (20) about one or two tilt axes (28), which actuator device has a first actuator electrode structure (42) and a second actuator electrode structure (44), and a sensor device (50) for detecting a tilt angle (θ) of the mirror element (20). The first actuator electrode structure (42) in this case comprises a plurality of first active actuator electrodes (421) and at least one first passive actuator electrode (422). The second actuator electrode structure (44) in this case comprises a plurality of second active actuator electrodes (441) and at least one second passive actuator electrode (442). At least one of the first active actuator electrodes (421) is subjected to a first voltage (U1) and at least one of the second active actuator electrodes (442) is subjected to a second voltage (U2). In order to tilt the mirror element (20), the first and the second voltage (U1, U2) are changed with different rates of change.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
7.
SEGMENTATION OR CROSS SECTIONS OF HIGH ASPECT RATIO STRUCTURES
A method identifies ring structures in pillars of high aspect ratio (HAR) structures. For segmentation of rings, a machine learning-logic is used. A two-step training method for the machine learning logic is described.
An optical apparatus for a lithography system comprises at least one optical element comprising an optical surface. The optical apparatus also comprises one or more actuators for deforming the optical surface. A strain gauge device is provided for determining the deformation of the optical surface. The strain gauge device comprises at least one optical fiber that maintains polarization.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01L 1/24 - Mesure des forces ou des contraintes, en général en mesurant les variations des propriétés optiques du matériau quand il est soumis à une contrainte, p.ex. par l'analyse des contraintes par photo-élasticité
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/38 - Moyens de couplage mécaniques ayant des moyens d'assemblage fibre à fibre
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
9.
METHOD AND APPARATUS FOR REMOVING A PARTICLE FROM A PHOTOLITHOGRAPHIC MASK
The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.
G03F 1/82 - Procédés auxiliaires, p.ex. nettoyage ou inspection
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
10.
MEASUREMENT DEVICE FOR INTERFEROMETRIC MEASUREMENT OF A SURFACE SHAPE
A measurement apparatus (10) for interferometrically measuring a shape of a surface (12) of a test object (14) in relation to a reference shape includes a diffractive optical element (30) generating a test wave (32) from measurement radiation (22), whereas a wavefront of the test wave is adapted to a target shape of the surface of the test object and the target shape is configured as a first non-spherical surface, and a reference element (38) with a reference surface (40) having the reference shape, the reference shape being configured as a further non-spherical surface and the reference element including a low thermal expansion material with a mean coefficient of thermal expansion having an absolute value of no more than 200×10−6 K−1 in the temperature range from 5° C. to 35° C.
A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an image of at least a portion of the photomask,
b) determining a geometric shape of a defect in the image as a repair shape, with the repair shape comprising a number n of pixels,
c) subdividing, in computer-implemented fashion, the repair shape into a number k of sub-repair shapes, with an i-th of the k sub-repair shapes having a number mi of pixels, which are a subset of the n pixels of the repair shape,
d) providing an activating particle beam and a process gas at each of the mi pixels of a first of the sub-repair shapes for the purposes of processing the first of the sub-repair shapes,
e) repeating step d) for the first of the sub-repair shapes over a number j of repetition cycles, and
f) repeating steps d) and e) for each further sub-repair shape.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
A heating arrangement, for example for use in a microlithographic projection exposure apparatus, comprises: at least one beam shaping unit for beam shaping of the electromagnetic radiation steered from a radiation source to the at least one optical element; and a sensor arrangement having at least one intensity sensor. The at least one beam shaping unit comprises at least one microstructured element for steering some the electromagnetic radiation to the sensor arrangement when the heating arrangement is in operation. Methods are provided.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
13.
DEVICE FOR IMAGING AND PROCESSING A SAMPLE USING A FOCUSED PARTICLE BEAM
The present application relates to a device for imaging and processing a sample using a focused particle beam, comprising: (a) at least one particle source which is configured to create a particle beam in an ultrahigh vacuum environment; (b) at least one sample chamber which serves to accommodate the sample and which is configured to image the sample in a high vacuum environment and process the sample in a medium vacuum environment; (c) at least one column which is arranged in a high vacuum environment and which has at least one particle-optical component configured to shape a focused particle beam from the particle beam and direct said focused particle beam at the sample; (d) at least one detection unit which is arranged within the at least one column and which is configured to detect particles emanating from the sample; (e) at least one gas line system which terminates at the outlet of the focused particle beam from the column and which is configured to locally provide at least one process gas at the sample with a pressure such that the focused particle beam is able to induce a particle beam-induced local chemical reaction for processing the sample; and (f) at least one pressure adjustment unit through which the particle beam and the particles emanating from the sample pass and which is configured to limit a pressure increase caused at the at least one detection unit as a result of processing the sample to a factor of 10 or less, preferably to a factor of 5 or less, more preferably to a factor of 3 or less, and most preferably to a factor of 2 or less, without impeding access of the particles emanating from the sample to the at least one detection unit.
The invention relates to a method and an apparatus for characterizing a microlithography mask. In one aspect, in a method according to the invention, the mask to be characterized is illuminated with light from a light source via an illumination optics unit, said light having a wavelength of less than 30 nm, wherein light that passes in a used beam path from the light source via the mask to a sensor unit is evaluated, wherein, at least intermittently, a portion of the light emitted by the light source is outcoupled from the used beam path by use of a mirror array having a multitude of independently adjustable mirror elements, and wherein, intermittently by use of the mirror array, all light is outcoupled from the used beam path for establishment of a defined illumination time of the sensor unit.
The disclosed techniques relate to a method for depositing at least one layer composed of an ionically bonded solid on a substrate, comprising the following steps: converting a coating material to the gas phase and depositing the coating material converted to the gas phase on the substrate. The layer is irradiated with UV/VIS light during the deposition. The disclosed techniques also relate to an apparatus for implementing the disclosed method and optical elements and devices created using the disclosed method.
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement par irradiation, p.ex. par photolyse, radiolyse ou rayonnement corpusculaire
C23C 16/513 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des jets de plasma
C23C 16/52 - Commande ou régulation du processus de dépôt
A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and
b) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.
G03F 1/20 - Masques ou masques vierges d'imagerie par rayonnement d'un faisceau de particules chargées [CPB charged particle beam], p.ex. par faisceau d'électrons; Leur préparation
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
17.
CHARGED PARTICLE BEAM SYSTEM, METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM, METHOD OF RECORDING A PLURALITY OF IMAGES AND COMPUTER PROGRAMS FOR EXECUTING THE METHODS
The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a ci plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.
A method for optical contact bonding components includes: placing a first surface (2a) of a first component (2) onto a second surface (3a) of a second component (3), to form an air film, and pressing the first surface against the second surface for optical contact bonding of the two components. Placing and pressing the first component is carried out by a robot (4). A laminar gas flow (10) is generated between the first and second surfaces with a ventilation device (9). A related apparatus (1) includes: the robot, configured to place the first surface onto the second surface thereby forming an air film. The robot presses the first surface against the second surface, to optically contact bond the first and second components. A holding device (8) holds the second component during the placing and pressing. A ventilation device generates the laminar gas flow between the first and second surfaces.
A measurement apparatus (1) for measuring a shape of a surface (2) of a test object (3), in particular an optical surface (2) by interferometry, has:
an illumination device (4) with an illumination source (5) for generating an illumination wave (6),
an interferometer device (7) with a splitting element (8) for splitting the illumination wave into a test wave (9) directed at the surface (2) and into a reference wave (10), and for combining the returning test wave (9), having interacted with the surface to be measured, with the reference wave (10),
a registration device (11) for registering and evaluating an interference pattern to determine a deviation of the measured surface shape from a target shape, and
a control device (12) configured to split the surface (2) to be measured into a plurality of individual areas (13) to be measured.
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
20.
METHOD OF PRODUCING AN OPTICAL ELEMENT FOR A LITHOGRAPHY APPARATUS
A method of producing an optical element for a lithography apparatus, comprising the steps of: a) detecting a height profile of a surface of a crystal substrate of the optical element, and b) ascertaining, using the height profile detected, an installed orientation (δ2, δ4, δ6) of the optical element in an optical system of the lithography apparatus in relation to a stress-induced birefringence on incidence of polarized radiation, where the installed orientation (δ2, δ4, δ6) is an orientation in relation to a rotation of the optical element about a center axis of the optical element that runs through the surface.
B24B 13/06 - Meulage de lentilles, l'outil ou la pièce étant commandé par des supports d'informations, p.ex. des gabarits, des bandes perforées ou magnétiques
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An actuator-sensor device for an optics module of a lithography apparatus comprises: an actuator-sensor unit having an actuator and a sensor; a control unit electrically connected to the actuator-sensor unit; and a support element which on a first supporting side of same supports the actuator-sensor unit and which on a second supporting side of same supports the control unit, with the second supporting side being opposite to the first supporting side.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
22.
METHOD FOR PRODUCING A MIRROR OF A LITHOGRAPHY SYSTEM
A method for producing a mirror of a lithography system includes providing first and second mirror parts. Cooling channels having elongate cooling channel openings in the region of a first connecting surface of the first mirror part are formed in the first mirror part, and/or cooling channels having elongate cooling channel openings in the region of a second connecting surface of the second mirror part are formed in the second mirror part. The method also includes bringing together the first and second mirror parts so that initially a partial region of the first connecting surface and a partial region of the second connecting surface come into contact and form a common contact surface. The common contact surface is enlarged by continuing to bring the first and second mirror parts together in a direction along the longitudinal extents of the cooling channel openings.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
23.
METHOD FOR PRODUCING A MIRROR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
A method for producing a mirror of a microlithographic projection exposure apparatus comprises providing a first mirror part having a first connecting surface and a second mirror part having a second connecting surface is provided. Cooling channels and/or auxiliary channels are formed in the second mirror part. The method also includes bringing together the first and second mirror parts so that initially a partial region of the first connecting surface and a partial region of the second connecting surface come into contact and form a common contact surface. The method further includes enlarging the contact surface by continuing to bring the first and second mirror parts together in a transverse direction with respect to the cooling channels or auxiliary channels.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A facet system for a lithography apparatus comprises: a facet element with an optically effective surface; a first piezoactuator arrangement for tilting the facet element about a first spatial direction; and a second piezoactuator arrangement for tilting the facet element about a second spatial direction oriented at right angles to the first spatial direction. The first piezoactuator arrangement and the second piezoactuator arrangement are arranged in a common plane which is spanned by the first spatial direction and the second spatial direction.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
25.
PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY
A projection exposure apparatus comprises an optical element. The optical element comprises a main body and an actuator for deforming an optically effective surface formed on the main body. The actuator is in a recess in the rear side of the main body.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/185 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la forme de la surface du miroir
26.
MEASURING DEVICE FOR INTERFEROMETRICALLY MEASURING A SURFACE FORM
An apparatus (10) for interferometrically measuring a surface shape (12) of a test object (14) in relation to a reference shape (41) includes (a) a diffractive optical element (30) generating a test wave (32) from measurement radiation (22), whereas a wavefront (42) of the test wave is adapted to a target shape (43) of the surface (12) of the test object (14) and the target shape is configured as a first non-spherical surface, (b) a reference element (38) with a reference surface (40) having the reference shape (41), the reference shape being configured as a further non-spherical surface, (c) a first holder (60) configured to arrange the test object (14) in the beam path of the test wave (32) in a measurement configuration, and (d) a further holder (62) configured to arrange the reference element (38) in the beam path of a reference wave (34) in the measurement configuration.
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
27.
OPTICAL SYSTEM FOR A LITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
An illumination optical unit serves for use in a lithographic projection exposure apparatus. The illumination optical unit serves to guide illumination light from a light source toward an object field. A structured object is arranged in the object field. The illumination optical unit is embodied such that the object field illuminated by the illumination optical unit has a field extent along a first field coordinate and a field extent, shorter in comparison, along a second field coordinate perpendicular thereto. The illumination optical unit is embodied such that the illumination light which impinges on the object field is polarized in a polarization direction that extends parallel to the shorter field extent along the second field coordinate. This yields an illumination optical unit which, firstly, can offer a high structure resolution and, secondly, can impose manageable properties on the optical design.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
28.
MOUNTING FOR A LITHOGRAPHY SYSTEM, AND LITHOGRAPHY SYSTEM
A mounting for a lithography system comprises: a mounted element; a mounting element; and fastening elements which together secure the mounted element relative to the mounting element in at least one degree of freedom. A spacing is provided between the mounted element and the mounting element in the direction of the at least one degree of freedom, and each fastening element exerts a force on the mounted element exclusively in the direction of the at least one degree of freedom.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
29.
OPTICAL ELEMENT, OPTICAL ARRANGEMENT AND INSERT COMPONENT
An optical element for reflecting radiation, such as EUV radiation, comprises: a substrate; a reflective coating applied to a surface of the substrate; a plurality of cooling channels, which run in the substrate below the surface on which the reflective coating is applied; a distributor for connecting at least one cooling fluid inlet to the plurality of cooling channels; and a collector for connecting the plurality of cooling channels to at least one cooling fluid outlet. The distributor and/or the collector are integrated into at least one, optionally rod-like insert component which is introduced into at least one to cavity formed in the substrate. An optical arrangement, such as an EUV lithography system, comprises: at least one optical element formed in the manner described further above; and a cooling device which is designed for the flowing of a cooling fluid through the plurality of cooling channels.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention proposes a method for processing a sample with a processing arrangement, comprising the steps of:
taking up a particle adhering on a sample surface of the sample with a measuring tip of the processing arrangement;
modifying a physical and/or chemical nature of a surface section on the sample or on a deposition unit for providing an activated surface section; and
moving the measuring tip into an interaction region of the activated surface section in which an attractive interaction acts between the particle taken up by the measuring tip and the activated surface section in order to transfer the particle from the measuring tip to the activated surface section.
Production techniques of a reflective optical element for the extreme ultraviolet wavelength range having a multilayer system reflective coating arranged on a substrate. The multilayer system has mutually alternating layers of at least two different materials with different real parts of their refractive indexes at a wavelength in the extreme ultraviolet wavelength range. A layer of one of the at least two materials forms a stack with the layer or layers arranged between the former and the closest layer of the same material with increasing distance from the substrate. At least one layer of the multilayer system is polished during or after deposition thereof, such roughness of the reflective optical element rises significantly less over all layers than in a corresponding reflective optical element with a reflective coating in the form of a multilayer system composed of unpolished layers. The multilayer system may have more than 50 layer stacks.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B24B 13/00 - Machines ou dispositifs conçus pour meuler ou polir les surfaces optiques des lentilles ou les surfaces de forme similaire d'autres pièces; Accessoires à cet effet
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
A system for a projection exposure apparatus which comprises a first component, a second component, and a decoupling device configured to decouple the second component in more than one degree of freedom from mechanical excitations of the first component. The decoupling device comprises first decoupling elements which have a positive stiffness. The decoupling device also comprises second decoupling elements, which have a negative stiffness. The decoupling device further comprises a third component, which is arranged between the first and second components.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
F16F 15/04 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens élastiques
F16F 15/03 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens électromagnétiques
33.
METHOD AND APPARATUS FOR EVALUATING AN UNKNOWN EFFECT OF DEFECTS OF AN ELEMENT OF A PHOTOLITHOGRAPHY PROCESS
The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G06V 10/75 - Appariement de motifs d’image ou de vidéo; Mesures de proximité dans les espaces de caractéristiques utilisant l’analyse de contexte; Sélection des dictionnaires
G06V 10/774 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p.ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]; Séparation aveugle de source méthodes de Bootstrap, p.ex. "bagging” ou “boosting”
A method for swapping an optical system, such as a DUV mirror, of a projection exposure apparatus, comprises: a) raising the optical system along a centre axis of the optical system so that mount struts of the optical system pass out of contact with frame struts of a frame carrying the optical system; b) rotating the optical system about the centre axis so that the mount struts are arranged between the frame struts; c) lowering the optical system along the centre axis; and d) shifting the optical system perpendicularly to the centre axis so that the optical system is moved out of a housing.
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
G02B 27/62 - Appareils optiques spécialement adaptés pour régler des éléments optiques pendant l'assemblage de systèmes optiques
35.
GAS INJECTION SUBSYSTEM FOR USE IN AN INSPECTION SYSTEM TO INSPECT A SAMPLE BY USE OF CHARGED PARTICLES AND INSPECTION SYSTEM HAVING SUCH GAS INJECTION SUBSYSTEM
A gas injection subsystem for use in an inspection system serves to inspect a sample by use of charged particles. At least one gas duct of the gas injection subsystem guides a gas flow from a gas reservoir to a sample inspection region. The gas duct has in the vicinity of the sample inspection region a diameter which is less than 5 mm. At least one flow control valve of the gas injection subsystem controls the gas flow through the gas duct. The valve is switchable between an open valve state in which a nominal gas flow through the gas duct is enabled and a closed valve state in which the gas duct is closed to inhibit a gas flow through the gas duct. The valve is designed such that a switching time between the open and the closed state is 100 ms at most. A gas injection subsystem results which facilitates a reproducible gas injection to the sample inspection region.
The invention relates to a method for registering structures on microlithographic masks comprising the comparison of a recorded measurement image of a mask and the target design underlying the mask, wherein the target design underlying the mask is converted into a simulated reference image that is directly comparable with the measurement image with the aid of an optical simulation, wherein the optical simulation is fully automatically differentiable in such a manner that a metric that is determined from the recorded measurement image and the reference image simulated in the forward mode and represents the differences allows in the backward mode a representation of the actual design of the mask that is directly comparable with the target design for the purpose of determining possible defects of the mask.
The invention relates to a method for registering structures on microlithographic masks comprising the comparison of a recorded measurement image of a mask and the target design underlying the mask, wherein the target design underlying the mask is converted into a simulated reference image that is directly comparable with the measurement image with the aid of an optical simulation, wherein the optical simulation is fully automatically differentiable in such a manner that a metric that is determined from the recorded measurement image and the reference image simulated in the forward mode and represents the differences allows in the backward mode a representation of the actual design of the mask that is directly comparable with the target design for the purpose of determining possible defects of the mask.
The invention furthermore relates to a corresponding computer program product and to the use of the above method in the course of a microlithographic process.
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p.ex. correction par deuxième itération d'un motif de masque pour l'imagerie
37.
OPTICAL ASSEMBLY, METHOD FOR DEFORMING AN OPTICAL ELEMENT, AND PROJECTION EXPOSURE SYSTEM
An optical assembly has an optical element for influencing the beam path in a projection exposure apparatus and an actuator device for deforming the optical element. The actuator device has at least one photostrictive component and at least one light source. The photostrictive component is mechanically coupled to the optical element for the transmission of a tensile and/or compressive force in order to deform the optical element. The light source is configured for targeted illumination of the photostrictive component in order to induce the tensile and/or compressive force in the photostrictive component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
A field facet system for a lithography apparatus comprises: an optical element which comprises an elastically deformable facet portion having a light-reflecting optically active surface; and at least one actuating element for introducing a bending moment into the facet portion to deform the facet portion to change a radius of curvature of the optically active surface. The facet portion is curved in an arched manner in a plan view of the optically active surface. The rigidity of the facet portion as viewed along a longitudinal direction of the facet portion is variable so that a normal vector oriented perpendicularly to the optically active surface tilts exclusively about a spatial direction when the bending moment is introduced into the facet portion.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
39.
OPTICAL COMPONENT AND OPTICAL SYSTEM, IN PARTICULAR FOR MICROLITHOGRAPHY
An optical component comprises a first layer system exhibiting a first wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon, and at least one second layer system exhibiting a second wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon. The first layer system and the second layer system are arranged on different optical surfaces. The wavelength dependencies of the first and the second reflectivity curve at least partially compensate one another so that the relative deviation from a desired reflectivity curve which is linear or constant with respect to the wavelength is no more than 5% within the specified wavelength range for a resultant summated reflectivity for the first layer system and the at least one second layer system. An optical system, such as a microlithography projection exposure apparatus, can include such an optical component.
A field facet system for a lithography apparatus comprises: an optical element comprising a base body and an elastically deformable facet portion connected to the base body and having a light-reflecting optically active surface; and a plurality of actuating elements for deforming the facet portion to change a radius of curvature of the optically active surface. The actuating elements are operatively connected to the facet portion to isolate a heat induced deflection of the actuating elements from the facet portion so that the radius of curvature is not affected by the heat-induced deflection of the actuating elements.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 5/09 - Miroirs à facettes multiples ou polygonales
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
41.
METHOD FOR PRODUCING A MULTI-PART MIRROR OF A PROJECTION ILLUMINATION SYSTEM FOR MICROLITHOGRAPHY
A method for producing a mirror of a projection exposure apparatus for microlithography includes providing at least one material blank. The material blank comprises a material with a very low coefficient of thermal expansion and has fault zones within which at least one material parameter deviates from a specified value by more than a minimum deviation. A first mirror part having a first connecting surface is produced from the material blank. A second mirror part having a second connecting surface is produced from the material blank or a further material blank. The first and second mirror parts are permanently connected to one another in the region of the first and second connecting surfaces.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a device for focusing a photon beam into a material. The device comprises: means for splitting the photon beam into a plurality of component beams; means for focusing the component beams at a predetermined focal depth within the material; and means for adapting the wavefronts of the component beams based at least in part on the focal depth.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
C03C 23/00 - Autres traitements de surface du verre, autre que sous forme de fibres ou de filaments
C03B 33/10 - Outils à couper le verre, p.ex. outils de rayage
G01J 9/00 - Mesure du déphasage des rayons lumineux; Recherche du degré de cohérence; Mesure de la longueur d'onde des rayons lumineux
An optical system for a lithography apparatus includes an optical element. The optical element comprises a substrate, an optically effective area provided on the substrate, and a plurality of channels which run through the substrate and to which a pressure can be applied via a fluid. An initial surface profile and a target surface profile different from the initial surface profile are associated with the optically effective area. The optically effective area can be switched from the initial surface profile to the target surface profile by applying pressure and a resulting deformation of the channels.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method of forming a layer (3) on a substrate (2) made of a fluoridic material includes: depositing a coating material (9) on the substrate to form the layer and generating a plasma (12) to assist the deposition of the coating material. The plasma is formed from a gas mixture (14) containing a first gas (G) and a second gas (H), wherein the second gas has an ionization energy less than an ionization energy of the first gas, the first gas is a noble gas and the second gas is a further noble gas. An associated optical element includes: a substrate (2) composed of a fluoridic material, in particular a metal fluoride, wherein the substrate has a coating (18) having a layer (3) formed by the above method. An associated optical system, in particular for the DUV wavelength range, includes at least one such optical element.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
C23C 14/30 - Evaporation sous vide par énergie éléctromagnétique ou par rayonnement corpusculaire par bombardement d'électrons
A measuring system (MS) configured to measure a projection radiation property representing an aberration level at a plurality of spaced apart measuring points distributed in the image field; and an operating control system with at least one manipulator operatively connected to an optical element of a projection exposure system to modify imaging properties of the projection exposure system based on measurement results generated by the measuring system. In a measuring point distribution calculation (MPDC), a measuring point distribution defining a number and positions of measuring points is used. The MPDC is performed under boundary conditions representing at least: (i) manipulation capacities of the operating control system; (ii) measuring capacities of the measuring system; and (iii) predefined use case scenarios defining a set of representative use cases. Each use case corresponds to a specific aberration pattern generated by the projection exposure system under a predefined set of use conditions.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
46.
METHOD FOR HEATING AN OPTICAL ELEMENT IN A MICROLITHO-GRAPHIC PROJECTION EXPOSURE APPARATUS AND OPTICAL SYSTEM
A method of heating an optical element in a microlithographic projection exposure apparatus and an optical system includes using a heating arrangement to introduce a heating power into the optical element. The heating power is regulated based on a setpoint value. The setpoint value is varied over time during the operation of the projection exposure apparatus. Varying the setpoint value for the heating power comprises a simulation of the effects of changes in the heating power relative to the actual value thereof based on a model for the thermal behavior of the optical element.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Provided for herein is a device that includes a first base support rotatable about a first rotational axis perpendicular to a rest surface of the first base support; a second base support arranged on the first base support and rotatable about a second rotational axis perpendicular to the rest surface of the first base support; at least one third base support arranged on the second base support and rotatable about a third rotational axis perpendicular to the rest surface of the first base support; and a supporting element is arranged on the third base support and including a holding surface for holding at least one optical element, the holding surface being rotatable about a rotational axis perpendicular to the holding surface.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01N 21/33 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
48.
OPTICAL ELEMENT FOR REFLECTING RADIATION, AND OPTICAL
ASSEMBLY
An optical element for reflecting radiation comprises: a substrate having first and second partial bodies put together at an interface; a reflective coating applied to a surface of the first partial body; a plurality of cooling channels running in the substrate in the region of the interface below the surface to which the reflective coating; a distributor in the substrate for connecting a coolant inlet to the plurality of cooling channels; and a collector in the substrate for connecting the plurality of cooling channels to a coolant outlet. The distributor and/or the collector extend, proceeding from the interface, further into the second partial body of the substrate than into the first partial body of the substrate. An optical arrangement, for example in an EUV lithography system, comprises: at least one such optical element; and a cooling device designed for flowing a coolant through the plurality of cooling channels.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
G01N 23/046 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux en utilisant la tomographie, p.ex. la tomographie informatisée
G01N 23/20 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
The present invention encompasses a method of repairing a defect on a lithography mask, comprising the following steps: (a.) directing a particle beam onto the defect to induce a local etching operation on the defect; (b.) monitoring the etching operation using backscattered particles and/or secondary particles and/or another free-space signal generated by the etching operation, in order to detect a transition from the local etching operation on the defect to a local etching operation on an element of the mask beneath the defect, and (c.) feeding in at least one contrast gas in order to increase contrast in the detection of the transition.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
51.
OPTICAL SYSTEM, AND METHOD FOR OPERATING AN OPTICAL SYSTEM
An optical system, for example in a microlithographic projection exposure apparatus, comprises a mirror and a temperature-regulating device. The mirror has an optical effective surface and a mirror substrate. A plurality of temperature-regulating zones are arranged in the mirror substrate. The temperature-regulating device is used to adjust the temperatures present in each of the temperature-regulating zones independently of one another. The temperature-regulating zones are arranged in at least two planes at different distances from the optical effective surface. The temperature-regulating zones in the at least two planes are configured as cooling channels through which, independently of one another, a cooling fluid at a variably adjustable cooling fluid temperature is able to flow. A method for operating such an optical system is provided.
A filter assembly, for example for a control loop for controlling the position of at least one element, comprises first and second filters. The first filter suppresses an undesired component in a signal to be filtered. The first filter produces a first signal delay in a first frequency range. The second filter produces a second signal delay in the first frequency range. The second signal delay at least partly compensates the first signal delay.
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
H03H 1/00 - RÉSEAUX D'IMPÉDANCES, p.ex. CIRCUITS RÉSONNANTS; RÉSONATEURS - Détails de réalisation des réseaux d'impédances dont le mode de fonctionnement électrique n'est pas spécifié ou est applicable à plus d'un type de réseau
An optical system, in particular for microlithography, comprises a laser light source for generating a multiplicity of light pulses, and a control unit configured to control the laser light source in such a way that, for a light pulse sequence generated by the laser light source, the time period between respectively successive light pulses varies across the light pulse sequence. A method comprises operating the optical system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The present disclosure relates to methods, to an apparatus and to a computer program for processing of a lithography object. More particularly, the present invention relates to a method for removing a material, to a corresponding apparatus and to a method for lithographic processing of a wafer, and to a computer program for performing the methods. A method for processing a lithography object comprises, for example: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region based at least partly on the first gas, wherein the first material comprises ruthenium.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p.ex. masques pour rayons X, masques en extrême ultra violet [EUV]; Leur préparation
55.
MIRROR, OPTICAL SYSTEM AND METHOD FOR OPERATING AN OPTICAL SYSTEM
A mirror, such as for a microlithographic projection exposure apparatus, comprises an optical effective surface. The mirror comprises a mirror substrate and a plurality of cavities in the mirror substrate. Fluid can be applied to each cavity. A deformation is transferable to the optical effective surface by varying the fluid pressure in the cavities. Related optical systems methods are provided.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
56.
METHOD FOR PRODUCING A MAIN BODY OF AN OPTICAL ELEMENT FOR SEMICONDUCTOR LITHOGRAPHY, AND MAIN BODY OF AN OPTICAL ELEMENT FOR SEMICONDUCTOR LITHOGRAPHY
A method for producing a main body (33) of an optical element for semiconductor lithography includes: —producing a blank (32), —introducing at least one fluid channel (36.x) into the blank (32), then —producing the main body (33) by shaping the blank (32) onto a mold (42). Furthermore, the disclosure describes a main body (33) of an optical element that includes at least one fluid channel (36.x), the fluid channel (36.x) being embodied such that the distance between the fluid channel (36.x) and the surface (40) of the main body (33) provided for an optically active area (41) varies by less than 1 mm, preferably less than 0.1 mm and particularly preferably less than 0.02 mm.
An assembly comprises an element that is mechanically stressed during operation or transport in at least one loading direction, and a decoupling joint for mechanically mounting the element. The decoupling joint effects at least partial decoupling in the loading direction. The decoupling joint is composed of a plurality of separate joint segments. At least two of these joint segments are shifted relative to one another in the loading direction in a stepped arrangement.
A method and a device determine the heating state of an optical element in an optical system, for example in a microlithographic projection exposure system. Electromagnetic radiation hits an incidence surface of the optical element during operation of the optical system. Using a calibration parameter, an average temperature at the incidence surface is estimated on the basis of a temperature measurement carried out via at least one temperature sensor located a distance from the incidence surface. The calibration parameter is selected differently in accordance with the illumination setting which is set in the optical system.
A vibration isolator (10; 210) for supporting a payload and isolating the payload from vibrations has a contact member (12) configured for supporting the payload, at least two pressurized gas compartments (24) arranged offset from each other to support the contact member at different locations, which pressurized gas compartments are connected to each other via a tubing system (54). The tubing system contains at least one restriction (66) at which a cross section of the tubing system is reduced by at least 50%.
F16F 9/04 - Ressorts, amortisseurs de vibrations, amortisseurs de chocs ou amortisseurs de mouvement de structure similaire, utilisant un fluide ou moyen équivalent comme agent d'amortissement utilisant un gaz uniquement dans une chambre à paroi flexible
F16F 15/027 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens fluides comprenant des dispositifs de commande
The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
C01B 21/06 - Composés binaires de l'azote avec les métaux, le silicium ou le bore
61.
TRANSFERRING ALIGNMENT INFORMATION IN 3D TOMOGRAPHY FROM A FIRST SET OF IMAGES TO A SECOND SET OF IMAGES
The present disclosure provides a method of transferring alignment information from a first set of images to a second set of images, a respective computer program product and a respective inspection device. A first set of cross-section images in a first imaging mode is obtained, the first cross-section images being taken at times Tai. A second set of cross-section images in a second imaging mode is obtained, the second cross-section images being taken at times Tbj, the times Tbj differing from the times Tai. Obtaining the first and second sets of cross-section images comprises subsequently removing a cross-section surface layer of a sample to make a new cross-section accessible for imaging, and imaging the new cross-section of the sample in the first imaging mode or in the second imaging mode. Switching is performed between the first and second imaging modes while obtaining the first and second sets of cross-section images.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c. à d. recalage des images utilisant des procédés basés sur les caractéristiques
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
A reflective optical element (17), in particular for reflecting EUV radiation (16), includes: a substrate (25), and a reflective coating (26) applied to the substrate (25). In one disclosed aspect, the substrate (25) is doped within its volume (V) with at least one precious metal (27). In a further disclosed aspect, the reflective coating (26) and/or a structured layer (28) that is formed between the substrate (25) and the reflective coating (26) is doped with at least one precious metal (27). Also disclosed are an optical arrangement, preferably a projection exposure apparatus for microlithography, in particular for EUV lithography, which includes at least one such reflective optical element (17), and a method of producing such a reflective optical element (17).
A method for producing an optical element (2), in particular for a projection exposure system (400), according to which a protective layer (11) consisting of a protective material is applied to a surface of a main body (7) until a protective layer thickness is obtained. The main body (7) has a substrate (17) and a reflective layer (18) applied to the substrate (17). The protective layer (11) is at least substantially defect-free.
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
A method of a defect detection of a plurality of semiconductor structures arranged on a wafer includes obtaining a microscopic image of the wafer. The microscopic image depicts the plurality of semiconductor structures. The method also includes obtaining, from a database, fingerprint data for each base pattern class of a set of base pattern classes associated with respective one or more semiconductor structures of the plurality of semiconductor structures. The method further includes performing the defect detection based on the fingerprint data and the microscopic image.
The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.
Provided for herein are methods for producing reflective optical elements for the EUV wavelength range which have grating structures or which include structures that can serve as phase shifters. The methods may include the following operations: applying a structurable layer to a substrate, applying a reflective coating to the substrate that has been provided with the structurable layer, and locally irradiating the structurable layer. The structurable layer may be irradiated before or after application of the reflective coating.
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
C03C 17/00 - Traitement de surface du verre, p.ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement
A method for measuring a surface shape of an optical element, wherein the optical element has a main body with a substrate and a reflective surface, and wherein at least one cooling channel for receiving a coolant is formed in the substrate, comprising: a) recording a cooling channel pressure, b) recording a measurement environment pressure, c) determining a pressure difference based on the cooling channel pressure and the measurement environment pressure, d) comparing the pressure difference with a predetermined target pressure difference, e) monitoring for a deviation between the pressure difference and the target pressure difference, wherein, if a deviation greater than a predetermined limit value is detected, the cooling channel pressure is adapted in such a way that the deviation becomes less than or equal to the predetermined limit value, and f) measuring the surface shape if the deviation is less than or equal to the predetermined limit value.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
68.
APPARATUS FOR ANALYZING AND/OR PROCESSING A SAMPLE WITH A PARTICLE BEAM AND METHOD
An apparatus for analyzing and/or processing a sample with a particle beam, comprising:
a sample stage for holding the sample;
a providing unit for providing the particle beam comprising:
an opening for guiding the particle beam to a processing position on the sample; and
a shielding element for shielding an electric field generated by charges accumulated on the sample;
wherein the shielding element covers the opening, is embodied in sheetlike fashion and comprises an electrically conductive material;
wherein the shielding element comprises a convex section, this section being convex in relation to the sample stage; and
wherein the convex section has a through opening for the particle beam to pass through to the sample.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
69.
APPARATUS FOR ANALYZING AND/OR PROCESSING A SAMPLE WITH A PARTICLE BEAM AND METHOD
An apparatus for analyzing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam;
a shielding element for shielding an electric field (E) generated by charges (Q) accumulated on the sample, wherein the shielding element has a through opening for the particle beam to pass through towards the sample;
a detecting unit configured to detect an actual position of the shielding element; and
an adjusting unit for adjusting the shielding element from the actual position into a target position.
An optical assembly of a microlithography imaging device comprises a holding device for holding an optical element. The holding device has a holding element having first and second interface sections. The first interface section for a first interface connecting the holding element and the optical element in an installed state. The second interface section forms a second interface connecting the holding element and a support unit in the installed state. The support unit connects the optical element to a support structure to support the optical element on the support structure via a supporting force. The holding device comprises an actuator device engaging on the holding element between the first and second interfaces. The actuator device acts on the holding element via a controller so that a specifiable interface deformation and/or a specifiable interface force distribution acting on the optical element is set on the first interface.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An adaptive optical element for microlithography comprises at least one manipulator for changing the shape of an optical surface of the optical element. The manipulator comprises a dielectric medium which is deformable via an electric field, work electrodes for generating the electric field in the dielectric medium, and a measuring electrode for measuring temperature. The measuring electrode is arranged in a direct assemblage with the dielectric medium. The measuring electrode has a temperature-dependent resistance.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
An adaptive optical element for microlithography comprises at least one manipulator for changing the shape of an optical surface of the optical element. The manipulator comprises a one-piece dielectric medium which is deformable by applying an electric field, electrodes that are arranged in interconnection with the one-piece dielectric medium, and a voltage generator which is wired to the electrodes and configured to apply to the electrodes, firstly, a control voltage that serves to change a longitudinal extent of the dielectric medium and, secondly, an AC voltage that serves to heat the dielectric medium.
A method for measuring an actuator in a projection exposure apparatus for semiconductor lithography, comprises: driving and deflecting a first actuator with a constant control signal; deflecting a further actuator by way of the mechanical coupling; and determining the capacitance of the further actuator, which was deflected by way of the coupling. A projection exposure apparatus for semiconductor lithography comprises a control device and a measuring device, wherein the measuring device is configured to determine the capacitance of at least one actuator in the projection exposure apparatus.
G01R 27/26 - Mesure de l'inductance ou de la capacitance; Mesure du facteur de qualité, p.ex. en utilisant la méthode par résonance; Mesure de facteur de pertes; Mesure des constantes diélectriques
A micromirror array is a constituent part of an illumination-optical component of a projection exposure apparatus for projection lithography. A multiplicity of micromirrors are in groups in a plurality of mirror modules, each of which has a rectangular module border. The mirror modules are in module columns. At least some of the module columns are displaced with respect to one another along a column boundary line so that at least some of the mirror modules adjacent to one another over the boundary line are arranged displaced with respect to one another. Their module border sides running transversely to the boundary line are not aligned flush with one another. This micromirror array can have a relatively standardized production and can have a relatively small reflection folding angle on the object if the micromirror array represents a final illumination-optical component upstream of a reflective object to be illuminated.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
An optical component has a diffraction structure for diffractively influencing a direction of emergence of light of at least one wavelength incident on the optical component. The diffraction structure includes at least two diffraction substructures superimposed in at least one portion of the optical component and having first positive diffraction structures and first negative diffraction structures. A first diffraction substructure has first positive diffraction structures and first negative diffraction structures arranged to have a symmetry following a first symmetry condition. A second diffraction substructure has second positive diffraction structures and second negative diffraction structures arranged to have a second symmetry condition differing from the first symmetry condition. This can result in an optical component for which a production of a diffraction structure with a diffraction effect for different target wavelengths and/or an improved diffraction effect for one and the same target wavelength is made more flexible.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
76.
OPTICAL SYSTEM, IN PARTICULAR FOR CHARACTERIZING A MICROLITHOGRAPHY MASK
The invention relates to an optical system and, in particular for characterizing a microlithography mask, comprising a light source for generating light of a wavelength of less than 30 nm, an illumination beam path leading from the light source to an object plane, an imaging beam path leading from the object plane to an image plane and a beam splitter, via which both the illumination beam path and the imaging beam path run.
An optical system for lithography apparatus comprises a movable element and a functional element having a first and second portions. The optical element is designed as an optical element or as a reference structure. The first portion is fastened to the movable element by a joining mechanism along a fastening plane. The second portion comprises a functional surface. The functional element comprises a decoupling device for decoupling by deformation the first portion from the second portion. The decoupling device is formed by a narrowing of the functional element. The narrowing is located laterally outside a region of the functional surface. The functional surface is a measurement surface which is suitable for acquisition for the purposes of positioning and/or orientating the movable element.
A field facet for a field facet mirror of a projection exposure apparatus has a reflection surface spanned by two field facet coordinates. An actuator device having at least two independently controllable actuator units serves to deform the reflection surface in at least two independent deformation degrees of freedom. A first of the deformation degrees of freedom brings about a change in a curvature of the reflection surface along a primary curvature coordinate which coincides with one of the field facet coordinates. A second of the deformation degrees of freedom brings about a change in a torsion of the reflection surface about the primary curvature coordinate. This can yield a field facet, the imaging performance of which is optimized, for example adapted to different illumination channel assignments within the projection exposure apparatus.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
79.
REFLECTIVE OPTICAL ELEMENT, ILLUMINATION OPTICAL UNIT, PROJECTION EXPOSURE APPARATUS, AND METHOD FOR PRODUCING A PROTECTIVE LAYER
A reflective optical element (17), in particular for an illumination optical unit of a projection exposure apparatus includes: a structured surface (25a) that preferably forms a grating structure (29), and a reflective coating (36) that is applied to the structured surface (25a). The reflective coating (36) covers the structured surface (25a) discontinuously, and the reflective optical element (17) has at least one protective layer (37) that covers the structured surface (25a) continuously. Also disclosed are an illumination optical unit (4) for a projection exposure apparatus (1) including at least one reflective optical element (17) of this type, to a projection exposure apparatus (1) including an illumination optical unit (4) of this type, and to a method for producing a protective layer (37) on a reflective optical element (17) of this type.
An optical system, such as a lithography system, comprises: a plate-shaped component, such as a stop element; an optionally frame-shaped holder for holding the component; and a plurality of webs for connecting the plate-shaped component to the holder. The plate-shaped component is releasably connected to the preferably wire-shaped webs. The plate-shaped component is attached to a carrying structure. The webs are releasably connected to the carrying structure.
A system and a method for measuring of parameter values of semiconductor objects within wafers with increased throughput include using a modified machine learning algorithm to extract measurement results from instances of semiconductor objects. A training method for training the modified machine learning algorithm includes reducing a user interaction. The method can be more flexible and robust and can involve less user interaction than conventional methods. The system and method can be used for quantitative metrology of integrated circuits within semiconductor wafers.
Method for the particle beam-induced etching of a lithography mask, more particularly a non-transmissive EUV lithography mask, having the steps of:
a) providing the lithography mask in a process atmosphere,
b) beaming a focused particle beam onto a target position on the lithography mask,
c) supplying at least one first gaseous component to the target position in the process atmosphere, where the first gaseous component can be converted by activation into a reactive form, where the reactive form reacts with a material of the lithography mask to form a volatile compound, and
d) supplying at least one second gaseous component to the target position in the process atmosphere, where the second gaseous component under predetermined process conditions with exposure to the particle beam forms a deposit comprising a compound of silicon with oxygen, nitrogen and/or carbon.
An optical element comprises a substrate and an optical surface formed on the substrate. At least one fluid-tight sealed chamber is embedded in the substrate and has a rheological fluid introduced therein for deforming the optical surface. An optical arrangement, such as an EUV lithography system, comprises at least one optical element as described above and a field generating device for generating an electromagnetic field. The electromagnetic field can be a time-varying electromagnetic field. The electromagnetic field can be a magnetic field. The electromagnetic field passes through the at least one chamber which contains the rheological fluid. A method for producing an optical element designed as described above is also provided.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 26/00 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables
H01F 1/44 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en liquides magnétiques, p.ex. ferrofluides
84.
OPTICAL ASSEMBLY, METHOD FOR CONTROLLING AN OPTICAL ASSEMBLY, AND PROJECTION EXPOSURE APPARATUS
An optical assembly for semiconductor lithography comprises an optical element and an actuator for deforming the optical element. The actuator is constructed from at least three sections, which include at least first and second group of sections that are controllable in each case via a controller are present. The first group serves for coarse actuation, and the second group serves for fine actuation. The controller is configured to control the groups independently of one another and the sections of a group jointly. The controller is furthermore configured to variably set the number of sections controlled jointly per group. Furthermore, the disclosure relates to a projection exposure apparatus equipped with the assembly, and to a method for controlling the optical assembly.
Charged particle beam system, method of operating a charged particle beam system, method of recording a plurality of images and computer programs for executing the methods
The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.
Disclosed are an optical system, in particular for microlithography, and a method for operating an optical system. According to one disclosed aspect, the optical system includes at least one mirror (100, 500, 600) having an optical effective surface (101, 501, 601) and a mirror substrate (110, 510, 610), wherein at least one cooling channel (115, 515, 615) in which a cooling fluid is configured to flow is arranged in the mirror substrate, for dissipating heat that is generated in the mirror substrate due to absorption of electromagnetic radiation incident from a light source on the optical effective surface, and a unit (135, 535, 635) to adjust the temperature and/or the flow rate of the cooling fluid either dependent on a measured quantity that characterizes the thermal load in the mirror substrate or dependent on an estimated/expected thermal load in the mirror substrate for a given power of the light source.
A metrology system serves for examining objects with EUV measurement light. An illumination optical unit serves for guiding the EUV measurement light towards the object to be examined. The illumination optical unit has an illumination optical unit stop for prescribing a measurement light intensity distribution in an illumination pupil in a pupil plane of the illumination optical unit. An output coupling mirror serves for coupling a part of the measurement light out of an illumination beam path of the illumination optical unit. The output coupling mirror has a mirror surface which is used to couple out measurement light and has an aspect ratio of a greatest mirror surface extent A longitudinally with respect to a mirror surface longitudinal dimension (x) to a smallest mirror surface extent B longitudinally with respect to a mirror surface transverse dimension (y) perpendicular to the mirror surface longitudinal dimension (x). The aspect ratio A/B is greater than 1.1. The result is a metrology system in which a measurement light throughput is optimized even in the simulation or emulation of an imaging optical unit of a projection exposure apparatus having an image-side numerical aperture of greater than 0.5 and in particular in the simulation or emulation of an anamorphic imaging optical unit.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
88.
METHODS AND EVALUATION DEVICES FOR ANALYZING THREE-DIMENSIONAL DATA SETS REPRESENTING DEVICES
Methods and evaluation devices for evaluating 3D data of a device under inspection are provided. A first machine learning logic detects target objects, and a second machine learning logic provides a voxel segmentation for the target objects. Based on the segmented voxels, a transformation to feature space is performed to obtain measurement results.
A residual gas analyser (40) for analysis of a residual gas (30), in particular a residual gas in an EUV lithography system (1), includes an inlet system (41) for admission of the residual gas from a vacuum environment (27a) into the residual gas analyser, and a mass analyser (43) having a detector (44) for detecting ionized constituents (30a) of the residual gas. The residual gas analyser includes an ion transfer device (42) for transferring the ionized constituents of the residual gas to the mass analyser, the ion transfer device having an ion filtering device (45) configured for filtering at least one ionic constituent (30a) of the residual gas. Also disclosed is an EUV lithography system, in particular an EUV lithography apparatus, which includes at least one residual gas analyser configured as indicated above for analysing a residual gas in a vacuum environment of the EUV lithography system.
A method of assembling a facet mirror of an optical system, in which facets of the facet mirror are imaged onto a field plane of the optical system, includes: a) determining positions of the facets of the facet mirror relative to interfaces of the facet mirror, with the aid of which the facet mirror is able to be connected to a support structure; b) calculating an actual position of an object field of the optical system arising for the facet mirror in the field plane; and c) arranging spacers between the interfaces and the support structure so that the object field in the field plane is brought from the calculated actual position to a target position.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
91.
METHOD AND APPARATUS FOR REPAIRING A DEFECT OF A LITHOGRAPHIC MASK
The present invention relates to a method for repairing at least one defect of a lithographic mask, the method comprising the step of: ascertaining parameters of at least one repair shape for the at least one defect, wherein ascertaining parameters comprises: allocating at least one numerical value to a parameter, wherein the numerical value deviates from the numerical value predefined by the at least one defect for said parameter.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
METHOD AND DEVICE FOR DETERMINING AN ALIGNMENT OF A PHOTOMASK ON A SAMPLE STAGE WHICH IS DISPLACEABLE ALONG AT LEAST ONE AXIS AND ROTATABLE ABOUT AT LEAST ONE AXIS
The present invention relates to a method for determining an alignment of a photomask on a sample stage which is displaceable along at least one axis that is parallel to a chuck surface of the sample stage, and is rotatable about at least one axis that is perpendicular to the chuck surface, which method comprises the following step:
The present invention relates to a method for determining an alignment of a photomask on a sample stage which is displaceable along at least one axis that is parallel to a chuck surface of the sample stage, and is rotatable about at least one axis that is perpendicular to the chuck surface, which method comprises the following step:
rotating the sample stage by a predefined angle and measuring a height change of the photomask during rotation at a predetermined, non-vanishing distance with respect to the rotation axis for the purpose of determining the alignment of the photomask on the sample stage.
G01B 15/00 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p.ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
93.
OPTICAL ELEMENT FOR THE VUV WAVELENGTH RANGE, OPTICAL ARRANGEMENT, AND METHOD FOR MANUFACTURING AN OPTICAL ELEMENT
An optical element (7, 8) for the VUV wavelength range includes a substrate (7a, 8a), and a coating (15) applied to the substrate (7a, 8a). The coating (15) has at least one fluorine scavenger layer (17, 17a, . . . , 17n) having a fluoride material (Mx+Fx−) doped with at least one preferably metallic dopant ion (Ax+). Also described are an optical arrangement that includes at least one such optical element (7, 8), as well as a method for producing such an optical element (7, 8).
An EUV collector has a reflection surface with a basic mirror shape of a spherical section. A diffraction grating for EUV used light is applied to the reflection surface. The diffraction grating is designed so that the EUV used light, which emanates from a sphere center of the spherical section, is diffracted by the diffraction grating toward a collection region. The collection region is spatially spaced apart from the sphere center. This creates an EUV collector in which an effective separation between EUV used light, which is to be collected with the aid of the collector, and extraneous light having a wavelength that differs from a used light wavelength is made possible.
A projection exposure apparatus comprises a projection objective, and the projection objective comprises an optical device, wherein the optical device comprises an optical element having an optically effective surface and an electrostrictive actuator. The electrostrictive actuator is deformable by a control voltage being applied. The electrostrictive actuator is functionally connected to the optical element to influence the surface shape of the optically effective surface. A control device supplies the electrostrictive actuator with the control voltage. A measuring device is configured, at least at times while the electrostrictive actuator influences the optically effective surface of the optical element, to measure directly and/or to determine indirectly the temperature and/or a temperature change of the electrostrictive actuator and/or the surroundings thereof to take account of a temperature-dependent influence during driving of the electrostrictive actuator by the control device.
G02B 13/16 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser en combinaison avec des convertisseurs ou des amplificateurs d'image
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
H10N 30/80 - Dispositifs piézo-électriques ou électrostrictifs - Détails de structure
H10N 30/20 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique, p.ex. fonctionnant comme actionneurs ou comme vibrateurs
96.
Method for measuring a sample and microscope implementing the method
The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.
A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
98.
OPTICAL ELEMENT, OPTICAL SYSTEM, LITHOGRAPHY SYSTEM, AND METHOD FOR OPERATING AN OPTICAL ELEMENT
An optical element for a lithography system comprises an optical surface and a photoresistor having an electric photoresistor value that varies according to an amount of light incident on a region of the optical surface.
In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (221) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
G02B 1/12 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci par traitement de la surface, p.ex. par irradiation
A method for acquiring a 3D image of a sample structure includes acquiring a first raw 2D set of 2D images of a sample structure at a limited number of raw sample planes; calculating a 3D image of the sample structure represented by a 3D volumetric image data set; and extracting a measurement parameter from the 3D volumetric image data set. A further number of interleaving 2D image acquisitions are recorded at a further number of interleaved sample planes which do not coincide with previous acquisition sample planes. The steps “calculating,” “extracting” and “assigning” are repeated for the further interleaving 2D set until convergence or a maximum number of 2D image acquisitions is recorded. A projection system used for such method comprises a projection light source, a rotatable sample structure holder and a spatially resolving detector. Such method can also be used to acquire virtual tomographic images of a sample.