Abrégé

A tandem photovoltaic structure including, from the rear face to the front face: a first solar cell—with a silicon heterojunction: a first layer of a first conductivity type made of amorphous silicon and a substrate of doped crystalline silicon disposed between two layers of intrinsic amorphous silicon, a recombination zone comprising a layer of nanocrystalline or monocrystalline silicon of the second conductivity type, a second solar cell comprising an active layer made of a perovskite material and a second layer of a second conductivity type. The recombination zone further includes a layer of the first conductivity type in contact with the active layer of the second cell or a layer of nanocrystalline or monocrystalline silicon of the first conductivity type in contact with the active layer of the second solar cell.

Classes IPC  ?

• H10K 30/57 - Dispositifs photovoltaïques [PV] comprenant des jonctions multiples, p. ex. des cellules PV en tandem

Abrégé

A novel method for automatically analyzing reflectograms in order to classify impedance discontinuities detected via their temporal or spectral signatures into various categories relating to potential faults or other physical elements present on the cable. A method for detecting the mutual influence of neighboring pulses in a reflectogram in order to separate them so as to isolate them and characterize each pulse accurately.

Classes IPC  ?

• G01R 31/08 - Localisation de défauts dans les câbles, les lignes de transmission ou les réseaux
• G01R 31/11 - Localisation de défauts dans les câbles, les lignes de transmission ou les réseaux en utilisant des méthodes de réflexion d'impulsion

Abrégé

The present disclosure relates to a converter (1) converting a voltage (Vin) into time. The converter comprises a direct path (100) including a first injection-locked oscillator (104) and a first circuit (106). The first circuit is configured for receiving an output signal (Φsens) of the first oscillator and a reference signal (Φ0), and for providing at least a first pulse signal (out) determined by a phase shift between the output signal (Φsens) of the first oscillator and the reference signal (Φ0). The converter further comprises a feedback loop (102) comprising a second circuit (108) configured for integrating said at least one first pulse signal (out).

Classes IPC  ?

• G04F 10/10 - Appareils pour mesurer des intervalles de temps inconnus par des moyens électriques en mesurant des quantités électriques ou magnétiques variant proportionnellement au temps

Abrégé

The invention relates to a method for achieving ultrasound imaging of an object having two opposite faces, using a pair of multi-element transducers comprising an emit transducer with L elements and a receive transducer with N elements, each placed on the same face or on two opposite faces of the object to be imaged. The invention allows real-time imaging of defects of any shape and orientation in solid structures to be facilitated. To this end, the algorithm described in patent application WO 2020/128344A1 is modified by adding a step of taking account of the distance between the two transducers when writing the spectrum of the image as a function of the spectrum of the received signals. The coordinates of the centre of the receiver, which are then different from that of the transmitter, are added. The expression for the cylindrical (or 3D spherical) wave must then take into account this difference between the positions of the multi-element transmit transducer and the multi-element receive transducer.

Classes IPC  ?

• G01N 29/04 - Analyse de solides
• G01N 29/06 - Visualisation de l'intérieur, p.ex. microscopie acoustique
• G01N 29/26 - Dispositions pour l'orientation ou le balayage
• G01N 29/46 - Traitement du signal de réponse détecté par analyse spectrale, p.ex. par analyse de Fourier

Abrégé

The invention relates to the use of a lipophilic derivative of an aminopolycarboxylic acid as an extractant to extract at least one rare earth from an acidic aqueous solution. Applications: production of rare earths from concentrates derived from urban ores and, in particular, from concentrates from waste electrical and electronic equipment such as used or discarded NdFeB permanent magnets; production of rare earths from concentrates derived from natural ores or from concentrates derived from residues of natural ores.

Classes IPC  ?

• C22B 59/00 - Obtention des métaux des terres rares
• C22B 3/28 - Amines
• C22B 3/32 - Acides carboxyliques
• C22B 3/26 - Traitement ou purification de solutions, p.ex. de solutions obtenues par lixiviation par extraction liquide-liquide utilisant des composés organiques
• C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p.ex. des rognures, pour produire des métaux non ferreux ou leurs composés
• C07C 237/06 - Amides d'acides carboxyliques, le squelette carboné de la partie acide étant substitué de plus par des groupes amino ayant les atomes de carbone des groupes carboxamide liés à des atomes de carbone acycliques du squelette carboné le squelette carboné étant acyclique et saturé ayant les atomes d'azote des groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques

Abrégé

The invention relates to a method for bi-level optimisation of the location of sensors for detecting one or more defects in a structure using tomography, the method comprising a phase of initialising/generating a database comprising N reference images associated with N defects, and at least one iteration of the following steps: - for each defect: - obtaining (40) items of data via the sensor array that are positioned at a current location; - solving (42) and obtaining a solution to a low-level optimisation problem of reconstructing the relevant defect; - determining (44) a criterion associated with a high-level problem of optimising the quality of the reconstruction of the defects; - determining (46) the gradient of the criterion; - moving (52) each sensor proportional to the value of the gradient and obtaining its location for the next iteration.

Classes IPC  ?

• G01N 29/14 - Recherche ou analyse des matériaux par l'emploi d'ondes ultrasonores, sonores ou infrasonores; Visualisation de l'intérieur d'objets par transmission d'ondes ultrasonores ou sonores à travers l'objet utilisant des techniques d'émission acoustique
• G01N 29/44 - Traitement du signal de réponse détecté

Abrégé

An opto-mechanical structure includes a substrate extending along a plane; a support element arranged on the substrate; a conductive element adapted to create an electric field oriented perpendicularly to the plane of the substrate; and an opto-mechanical resonator. The opto-mechanical resonator includes a mechanically movable element made of a piezoelectric material and arranged on the support element, the piezoelectric material being chosen so that the electric field created by the conductive element when the same is subjected to an electric potential causes a displacement of the movable element; an optical resonator coupled to the movable element. The conductive element is located above or below the movable element, at a non-zero distance from the movable element, the conductive element and the movable element having a surface facing each other.

Classes IPC  ?

• G02B 26/00 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables
• B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
• H10N 30/20 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique, p.ex. fonctionnant comme actionneurs ou comme vibrateurs

Abrégé

A micro-electromechanical device includes a frame; a proof mass connected to the frame through a first mechanical link which allows pivoting of the proof mass to relative to the frame about a first axis of rotation parallel to a mean plane of the frame; and a lever for detecting pivoting of the mass, connected to the proof mass through a second mechanical link allowing rotation of the lever relative to the proof mass about a second axis. The second link includes two walls connecting perpendicularly to each other, one to the lever and the other to the proof mass, one of the walls being parallel to the second axis of rotation.

Classes IPC  ?

• G01C 19/5747 - Dispositifs sensibles à la rotation utilisant des masses vibrantes, p.ex. capteurs vibratoires de vitesse angulaire basés sur les forces de Coriolis utilisant des masses planaires vibrantes entraînées dans une vibration de translation le long d’un axe - Details de structure ou topologie les dispositifs ayant deux masses de détection en mouvement en opposition de phase chaque masse de détection étant reliée à une masse d'entraînement, p.ex. cadres d'entraînement

Abrégé

A switch based on a phase change material including: a region in said phase change material that couples the first and second conductive electrodes of the switch; and a waveguide including a first end in line with a face of the region in said phase change material and a second end, opposed to the first end, designed to be illuminated by a laser source.

Classes IPC  ?

• H10N 70/20 - Dispositifs de commutation multistables, p.ex. memristors
• G02F 1/29 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de la position ou de la direction des rayons lumineux, c. à d. déflexion
• H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation

Abrégé

The invention relates to a method (30) for optimising the placement of a sensor array for detecting one or more anomalies in a structure, the method comprising a step of iteratively maximising area coverage in the wavenumber space corresponding to the Ewald circle, the method also comprising the steps of: - initialising (32) the sensor array; and, until convergence, at least one iteration of the following steps: - selecting (46), for each iteration, one of the sensors from the sensor array; - determining (48) a neighbouring region; - for each point in the neighbouring region, evaluating (50) predetermined distance metrics between the normalised frequency coverage of an ideal sensor distribution and that of the distribution of the sensor array to which the selected sensor located at said point belongs; - selecting (52) the metrics minimising point as the new position of the selected sensor.

Classes IPC  ?

• G01N 29/14 - Recherche ou analyse des matériaux par l'emploi d'ondes ultrasonores, sonores ou infrasonores; Visualisation de l'intérieur d'objets par transmission d'ondes ultrasonores ou sonores à travers l'objet utilisant des techniques d'émission acoustique
• G01N 29/44 - Traitement du signal de réponse détecté

Produits et services

Alliages de métaux des terres rares; métaux alcalino-terreux; métaux alcalins; métaux terreux; compositions destinées à la finition des métaux; compositions pour le placage des métaux; tous ces produits étant destinés à entrer dans la composition de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Métaux communs et leurs alliages; alliages de métaux non ferreux; tous ces produits étant destinés à entrer dans la composition de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Services de traitement des métaux pour la réalisation de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée; transformation des métaux pour la réalisation de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée; fabrication sur mesure ou sur commande de métaux à l’échelle nanométrique sous forme de matériaux en trois dimensions constitués de brins nanométriques interconnectés; fabrication sur mesure ou sur commande de buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée. Evaluations techniques concernant la conception (travaux d’ingénieurs); recherches scientifiques; recherches techniques; recherche liée aux métaux; recherche et développement de produits; recherche et développement de métaux à l’échelle nanométrique; conception de produits; conception de métaux à l’échelle nanométrique; tous ces services étant fournis dans le domaine des buissons de nanofilaments de métaux se structurant sous forme d’éponge métallique ultralégère et nano-structurée.

Abrégé

A device for locating objects stored in a storage unit includes a plurality of storage spaces, each object being equipped with an RFID tag, the object-locating device comprising: a plurality of inhibitor circuits each intended to be placed in an associated storage space and configured to prevent the RFID tag of the object from being read by an RFID reader, a control unit configured to control activation of the inhibitor circuits in a predetermined activation sequence; a locating unit configured to control the RFID reader, and to receive, in each step of the activation sequence, a list of identifiers of the objects stored in the storage unit, the list being supplied by the RFID reader, and configured to identify the storage space of each object based on the lists of identifiers and on the activation sequence.

Classes IPC  ?

• G06K 7/10 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire
• G01S 5/02 - Localisation par coordination de plusieurs déterminations de direction ou de ligne de position; Localisation par coordination de plusieurs déterminations de distance utilisant les ondes radioélectriques
• G06Q 10/087 - Gestion d’inventaires ou de stocks, p.ex. exécution des commandes, approvisionnement ou régularisation par rapport aux commandes

Abrégé

A data storage circuit includes an array of memory cells; a logic processing circuit configured to carry out a logic operation having N binary data as operands stored in N input memory cells, with N≥2, the second input/output nodes of the input memory cells being linked by a common bit line, the logic processing circuit comprising: a transimpedance amplifier stage configured to supply an analogue read signal from the voltage of the common bit line; a comparator intended to compare the analogue read signal with a first adjustable reference voltage in order to generate a digital output signal corresponding to the result of the logic operation; a control unit configured to adjust the reference voltage to an amplitude selected from among N distinct predetermined amplitudes, depending on the type of logic operation.

Classes IPC  ?

• G11C 11/22 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des éléments ferro-électriques
• H03K 19/20 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion caractérisés par la fonction logique, p.ex. circuits ET, OU, NI, NON

Abrégé

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

Classes IPC  ?

• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
• H01L 21/311 - Gravure des couches isolantes
• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif

Abrégé

A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.

Classes IPC  ?

• H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
• C30B 29/68 - Cristaux avec une structure multicouche, p.ex. superréseaux
• C30B 33/02 - Traitement thermique
• H10N 70/20 - Dispositifs de commutation multistables, p.ex. memristors

Abrégé

A method for determining the operating state of a light-emitting implant implanted in the brain of a living being, the light-emitting implant including a light source responsible for emitting light into the brain of the living being, the method using a diagnosing device that includes a receiver of a light signal transmitted through a first eye of the living being and a device for determining the operating state of the light-emitting implant based on the received transmitted light signal.

Classes IPC  ?

• G01J 1/44 - Circuits électriques
• A61N 5/06 - Thérapie par radiations utilisant un rayonnement lumineux

Abrégé

A supercapacitor that includes: a first electrode; a second electrode; and a composite solid electrolyte disposed between the first electrode and the second electrode. The composite solid electrolyte includes a dielectric matrix and an ionic conductor disposed in channels/pores in the dielectric matrix. Methods of fabricating such supercapacitors are also disclosed.

Classes IPC  ?

• H01G 11/56 - Condensateurs hybrides, c. à d. ayant des électrodes positive et négative différentes; Condensateurs électriques à double couche [EDL]; Procédés de fabrication desdits condensateurs ou de leurs composants Électrolytes Électrolytes solides, p.ex. gels; Additifs pour ceux-ci
• H01G 11/06 - Condensateurs hybrides avec une des électrodes permettant de doper les ions de façon réversible, p.ex. condensateurs lithium-ion
• H01G 11/50 - Condensateurs hybrides, c. à d. ayant des électrodes positive et négative différentes; Condensateurs électriques à double couche [EDL]; Procédés de fabrication desdits condensateurs ou de leurs composants Électrodes caractérisées par leur matériau spécialement adaptées aux condensateurs lithium-ion, p.ex. pour doper le lithium ou pour intercalation
• H01G 11/84 - Procédés de fabrication de condensateurs hybrides ou EDL ou de leurs composants

Abrégé

It is essential to have efficient, simple, quick and transportable tools for reliably identifying bacteria that are multiresistant to antibiotics, more specifically extended spectrum β-lactamase (ESBL)-producing Enterobacteriaceae, which are the most widespread among Enterobacteriaceae. The present invention meets this requirement through its ease of use and its speed. The invention is based on detecting the enzyme activity of β-lactam hydrolysis using an antibody capable of discriminating between the intact form of the β-lactam ring of a β-lactam and its hydrolysis product. This antibody can be used in kits and methods enabling for rapidly detecting (in less than one hour), without using expensive equipment (a small strip visible to the naked eye), the presence of bacteria producing penicillin-type, plasmid-mediated or hyper-produced AmpC enzymes, of ESBL or carbapenemase from colonies or in a sample.

Classes IPC  ?

• C12Q 1/34 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir une hydrolase
• C12Q 1/18 - Test de l'activité antimicrobienne d'un matériau

Abrégé

A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

Classes IPC  ?

• H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
• H01L 27/146 - Structures de capteurs d'images
• H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
• H01L 31/09 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet

Abrégé

A radio-frequency switch able to establish or break transmission of a radio-frequency signal, the switch including a first conductive finger, a second conductive finger, transmission of the radio-frequency signal taking place between the first conductive finger and the second conductive finger, at least one conductive electrode and a layer made of a PCM material having a lower surface and an upper surface. The first and second conductive fingers are spaced apart by a non-zero distance and in contact with the lower surface of the PCM layer. The conductive electrode is in contact with the upper surface of the PCM layer.

Classes IPC  ?

• H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
• H10N 79/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément couvert par le groupe

Abrégé

An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

Classes IPC  ?

• G01N 21/47 - Dispersion, c. à d. réflexion diffuse

Abrégé

A micro-electromechanical device of the inertial sensor type, includes a support, a movable frame, translationally guided along an axis of displacement parallel to the support, and including a proof mass which extends from a first end, connected to the support through a mechanical link, up to a second end, the mass being connected, on the side of the second end, to a member for detecting pivoting of the mass with respect to the frame. The link includes a thin, flexible wall which extends parallel to the support, from the frame to the first end of the proof mass, along a mean line which is parallel to the axis of displacement of the frame.

Classes IPC  ?

• G01C 19/5712 - Dispositifs sensibles à la rotation utilisant des masses vibrantes, p.ex. capteurs vibratoires de vitesse angulaire basés sur les forces de Coriolis utilisant des masses entraînées dans un mouvement de rotation alternatif autour d'un axe les dispositifs comportant une structure micromécanique

Abrégé

An electronic chip including a substrate and, on the side of one face of the substrate, a metal pad intended to receive a soldering material, the pad including, in order from said face of the substrate, a first metal layer, an electrically conductive barrier layer, and a second metal layer, wherein an electrically insulating barrier layer is arranged on, and in contact with, the sidewall of the first metal layer over the entire periphery of the metal pad.

Classes IPC  ?

• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

A device for regrowth of a thick structure lattice-matched with InP comprising: a Si substrate, an interface layer of SiO2 on the Si substrate, a bonding layer on the interface layer, said bonding layer being made of a III-V material consisting of an alloy of the AlGaInAs family, and a regrowth layer on the bonding layer, said regrowth layer being made of InP.

Classes IPC  ?

• H01S 5/02 - Lasers à semi-conducteurs - Détails ou composants structurels non essentiels au fonctionnement laser

Abrégé

The invention relates to a fixed-bed reactor/exchanger (1) for carrying out a thermochemical conversion reaction, comprising a heat exchange grid, the openings of which, which are delimited between adjacent bars, allow the reagents of the desired thermochemical conversion reaction to flow therein, wherein the bars are hollow and effectively constitute channels for the circulation of a heat transfer fluid, by means of which the heat of the reaction can be discharged (or supplied).

Classes IPC  ?

• B01J 8/02 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solides; Appareillage pour de tels procédés avec des particules immobiles, p.ex. dans des lits fixes
• F28D 7/16 - Appareils échangeurs de chaleur comportant des ensembles de canalisations tubulaires fixes pour les deux sources de potentiel calorifique, ces sources étant en contact chacune avec un côté de la paroi d'une canalisation les canalisations étant espacées parallèlement
• F28D 13/00 - Appareils échangeurs de chaleur utilisant un lit fluidisé
• F28D 21/00 - Appareils échangeurs de chaleur non couverts par l'un des groupes

Abrégé

The invention relates to a method for extracting discrete neutron components (derived from photonuclear reactions between photons and at least one chemical element to be detected) from a neutron spectrum derived from photonuclear reactions obtained by irradiating a material comprising the at least one chemical element to be detected with a source of photons, at least one energy of the photons of the source being greater than the photonuclear reaction threshold of the chemical element to be detected, which method uses a multilayer and multichannel neural network having an architecture with a convolution stage and a deconvolution stage. The method comprises a preliminary step of training the neural network by supervised learning and a prediction step using the trained neural network.

Classes IPC  ?

• G01N 23/221 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux utilisant l'analyse par activation
• G01V 5/00 - Prospection ou détection au moyen de radiations nucléaires, p.ex. de la radioactivité naturelle ou provoquée

Abrégé

The present invention relates to a negative electrode, in particular suitable for use in a lithium-ion battery, having a negative electrode layer formed on at least one surface of a current collector, wherein said negative electrode layer comprises at least one Si-C composite particulate material comprising silicon-based particles and one or more carbonaceous material; particles of at least one uncompressible graphite; and particles of at least one compressible graphite, the total uncompressible graphite content ranging from 2% to 60% by mass of the total mass of the negative electrode layer.

Classes IPC  ?

• H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
• H01M 4/1393 - Procédés de fabrication d’électrodes à base de matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
• H01M 4/1395 - Procédés de fabrication d’électrodes à base de métaux, de Si ou d'alliages
• H01M 4/133 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de matériau carboné, p.ex. composés d'intercalation du graphite ou CFx
• H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
• H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
• H01M 4/583 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
• H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif

Produits et services

Logiciels d’intelligence artificielle; logiciels interactifs basés sur l’intelligence artificielle; équipements de traitement de données basé sur l’intelligence artificielle; systèmes de traitement de données basé sur l’intelligence artificielle; tous ces produits étant utilisés dans le domaine du développement de solutions d’intelligence artificielle, de la gestion des risques, de la responsabilité et de la conformité en matière réglementaire, industrielle, technologique, commerciale, financière, opérationnelle, environnementale, de santé et de sécurité. Conseil en intelligence artificielle; plates-formes pour intelligence artificielle en tant que logiciel-service [SaaS]; recherche et développement dans le domaine de l’intelligence artificielle; recherche en matière de traitement de données basé sur l’intelligence artificielle; conception et développement de programmes et de systèmes pour traitement de données basés sur l’intelligence artificielle; services d'ingénierie en matière de traitement de données et d’intelligence artificielle; services de génie logiciel pour le traitement des données et l’intelligence artificielle; tous ces services étant fournis dans le domaine du développement de solutions d’intelligence artificielle, de la gestion des risques, de la responsabilité et de la conformité en matière réglementaire, industrielle, technologique, commerciale, financière, opérationnelle, environnementale, de santé et de sécurité.

Produits et services

Measuring instruments and apparatus; apparatus and instruments for control [inspection]; quality control and testing devices; data acquisition apparatus; data processing apparatus; diagnostic apparatus, not for medical use; apparatus for physical analysis not for medical purposes; electronic imaging devices; imaging apparatus; non-destructive control apparatus; non-destructive test apparatus; sensors, detectors and monitoring instruments; tomographic instruments other than for medical use; tomographic apparatus other than for medical use; software; artificial intelligence software; software for monitoring, analyzing, controlling and implementing operations in the physical world; none of these products being intended to facilitate the sharing and rental of vehicles. Non-medical imaging services; non-destructive control services; non-destructive test services; non-destructive trial services; design and development of testing and analysis methods; technical data analysis services.

Abrégé

A data storage circuit includes a matrix of memory cells such that each memory cell comprises: a read circuit associated with at least one memory cell, comprising: a capacitive transimpedance amplifier stage configured to read a datum stored in a memory cell; the capacitive transimpedance amplifier stage comprising: an operational amplifier; a feedback capacitive impedance mounted between the output and the first input of the operational amplifier; a sequencer circuit configured to, following the reading of a datum corresponding to the second logic state, apply a control signal to the first input/output node having an amplitude lower than the first reference signal and maintain the selection transistor in an on state so as to replace, in the selected elementary storage component, a level of charges corresponding to the second logic state.

Classes IPC  ?

• G11C 11/22 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des éléments ferro-électriques

Abrégé

The present invention concerns a novel human erythroid progenitor cell line, wherein at least 90% of the cells are CD36+ CD44−CD71+; and wherein the cells:—do not express the gene encoding the receptor of Granulocyte-macrophage colony-stimulating factor (GM-CSF-R gene) or express GM-CSF-R gene at a lower level than the cells of human UT-7/Epo-S1 cell line; and—express the gene encoding the receptor of erythropoietin (Epo-R gene). The present invention also concerns the uses thereof for producing, detecting, or quantifying parvovims B19. The present invention allows the use of the cell lines for 1) a highly sensitive B19 infectious particles detection, and, 2) the efficient production of infectious B19 particles.

Classes IPC  ?

• C12N 5/078 - Cellules du sang ou du système immunitaire
• C12N 5/00 - Cellules non différenciées humaines, animales ou végétales, p.ex. lignées cellulaires; Tissus; Leur culture ou conservation; Milieux de culture à cet effet
• C12N 7/00 - Virus, p.ex. bactériophages; Compositions les contenant; Leur préparation ou purification
• G01N 33/50 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique

Abrégé

An interconnector for solar cell strings intended to form a photovoltaic module, the interconnector comprising at least one cell interconnecting strip extending beyond a cell located at the end of the string through an end, and at least one string interconnecting strip, a section of one from among the cell interconnecting strip and the string interconnecting strip has a substantially constant surface, and a variable shape between a first zone of a first thickness and a second zone of a second thickness, the second thickness being strictly less than the first thickness and the second thickness being strictly less than 50 μm. Each second zone thus constitutes a resistance welding zone without loss in terms of conduction. Without extra thickness at the interconnections, the risk of the module breaking is limited.

Classes IPC  ?

• H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV
• H01L 31/048 - Encapsulation de modules
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

The invention relates to a method (100) for determining a central wavelength of interest (λc) of a spectral line of interest, comprising the steps of: - A detecting, at a time t1, a first reference measured profile (Ps1ref), • B then detecting, at a time t0, a measured profile of interest (PSech) issued by said sample of interest, • C then detecting, at a time t2, a second reference measured profile (Ps2ref) issued by a reference source (Sref), • D processing said first and second reference measured profiles and processing the measured profile of interest, • E determining a reference position referred to as the intermediate reference position (P0ref) at the time t0 by interpolation, • F determining a value of the central wavelength of interest from a difference between said position of interest (Pech) and said intermediate reference position (P0ref), from said known value of the reference wavelength and from a linear dispersion (DL) of the spectrometer and of the associated detector.

Classes IPC  ?

• G01N 21/31 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique
• G01N 21/71 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité thermiquement
• G01J 3/32 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même en étudiant des bandes d'un spectre successivement à l'aide d'un détecteur unique
• G01J 3/28 - Etude du spectre
• G01N 21/27 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
• G01J 3/10 - Aménagements de sources lumineuses spécialement adaptées à la spectrométrie ou à la colorimétrie
• G01J 3/443 - Spectrométrie par émission

Abrégé

Disclosed is a system (10) for measuring a central wavelength of interest (λc) of a spectral line of interest (RSe) measured by a spectrometer, the system comprising: - a detecting system comprising a spectrometer (Spectro) associated with a detector (Det) - a Y-shaped optical fiber (FOY) configured such that: • the first input collects a light signal (SLech) issued by the sample, called the sample signal, • the second input collects a light signal (SLref) issued by a reference source (Sref), called the reference signal, • the output is coupled to an input of the spectrometer, the measuring system being configured so that the detector detects said sample signal and said reference signal simultaneously or sequentially over time, the measuring system further comprising a processing unit (UT) configured to: • process said measured profile of interest and said measured reference profile, • determine a value of the central wavelength of interest from a difference between said position of interest and reference position, from said known value of the reference wavelength and from a linear dispersion (DL) of the detection system.

Classes IPC  ?

• G01J 3/02 - Spectrométrie; Spectrophotométrie; Monochromateurs; Mesure de la couleur - Parties constitutives
• G01J 3/32 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même en étudiant des bandes d'un spectre successivement à l'aide d'un détecteur unique
• G01N 21/31 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique
• G01N 21/71 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité thermiquement
• G01J 3/28 - Etude du spectre
• G01N 21/27 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
• G01J 3/10 - Aménagements de sources lumineuses spécialement adaptées à la spectrométrie ou à la colorimétrie
• G01J 3/443 - Spectrométrie par émission

Abrégé

A tandem photovoltaic structure including, from the rear face to the front face: a first SHJ solar cell comprising a first layer of P-type doped amorphous silicon and a substrate of N-type doped crystalline silicon, a junction layer, a second perovskite-type solar cell comprising an active layer and a second P-type layer, the junction layer being made of N-type TCO and being in direct contact either with the second P-type layer or with the first P-type layer, one amongst the first or second solar cell also comprising an N-type layer, the junction layer serving as an N-type layer in the other one amongst the first or second solar cell.

Classes IPC  ?

• H10K 39/15 - Modules photovoltaïques [PV] organiques; Réseaux de cellules PV organiques simples comprenant à la fois des cellules PV organiques et des cellules PV inorganiques

Abrégé

A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

Classes IPC  ?

• H01L 31/0224 - Electrodes
• H01L 31/028 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des éléments du groupe IV de la classification périodique
• H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

The present invention relates to the development of new iron-based alloys, in particular of a steel having improved mechanical, thermal, and physico-chemical (corrosion) properties. More specifically there is disclosed a steel material having a new microstructure, characterized by a hierarchical triple structuring in which there appears a lattice of internal nanometric sub-cells capable of improving the properties and performance of steels.

Classes IPC  ?

• C22C 38/00 - Alliages ferreux, p.ex. aciers alliés
• C22C 38/02 - Alliages ferreux, p.ex. aciers alliés contenant du silicium 
• C22C 38/04 - Alliages ferreux, p.ex. aciers alliés contenant du manganèse
• C22C 38/40 - Alliages ferreux, p.ex. aciers alliés contenant du chrome et du nickel
• C22C 33/02 - Fabrication des alliages ferreux par des techniques de la métallurgie des poudres
• C22C 38/44 - Alliages ferreux, p.ex. aciers alliés contenant du chrome et du nickel et du molybdène ou du tungstène
• C22C 38/58 - Alliages ferreux, p.ex. aciers alliés contenant du chrome et du nickel et plus de 1,5% en poids de manganèse
• B22F 1/07 - Poudres métalliques caractérisées par des particules ayant une structure nanométrique
• B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
• B22F 10/28 - Fusion sur lit de poudre, p.ex. fusion sélective par laser [FSL] ou fusion par faisceau d’électrons [EBM]
• B22F 10/366 - Paramètres de balayage, p.ex. distance d’éclosion ou stratégie de balayage
• B22F 10/64 - Traitement de pièces ou d'articles après leur formation par des moyens thermiques
• B33Y 10/00 - Procédés de fabrication additive
• B33Y 40/20 - Posttraitement, p.ex. durcissement, revêtement ou polissage
• B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive

Abrégé

One aspect of the invention relates to a method for bonding an interconnection element (INTR) to a photovoltaic cell comprising the steps of: - depositing an electrically conductive adhesive film (F1) on the interconnection element (INTR); and - depositing the interconnection element (INTR) on the photovoltaic cell (CELL1), the electrically conductive adhesive film (F1) being arranged in contact with the photovoltaic cell (CELL1).

Classes IPC  ?

• H01L 31/048 - Encapsulation de modules
• H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV

Abrégé

The present description concerns an electronic device comprising: —a silicon layer having a first surface and a second surface, —an insulating layer in contact with the first surface of the silicon layer, —at least one transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the gate portion being less heavily doped than the rest of the gate region.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
• H01L 21/266 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions en utilisant des masques
• H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant
• H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant

Abrégé

The present description concerns an electronic device comprising: a silicon layer, an insulating layer in contact with a first surface of the silicon layer, a transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the device further comprising, under the gate portion, a partial insulating trench in the silicon layer extending from a second surface of the silicon layer down to a depth smaller than the thickness of the silicon layer.

Classes IPC  ?

• H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
• H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant

Abrégé

A method for manufacturing an electrical conductor, such as a current rod, comprising the following successive steps: —providing a core made of a first metallic material, —providing a sheath made of a second metallic material, the sheath being intended to cover a first part of the core, —providing a connection terminal made of a third metallic material, —assembling the core and the connection terminal, by crimping, or by crimping and brazing, or by braze welding, or by brazing, —assembling the core and the connection terminal with the sheath.

Classes IPC  ?

• H01M 8/0206 - Métaux ou alliages
• B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p.ex. revêtement ou placage au moyen d'une presse
• B32B 1/08 - Produits tubulaires
• B32B 15/01 - Produits stratifiés composés essentiellement de métal toutes les couches étant composées exclusivement de métal
• H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
• H01M 8/12 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments à combustible; Leur fabrication Éléments à combustible avec électrolytes solides fonctionnant à haute température, p.ex. avec un électrolyte en ZrO2 stabilisé

Abrégé

A device and a method for automatically deploying a communication network between a moving vehicle VM and a rear base BA, the moving vehicle moving from an initial position along a trajectory T. The deployment involves positioning a plurality of communication relay appliances along the trajectory of the VM to form, between the VM and the rear base, a two-way, linear wireless mesh communication network, such that the communications between the moving vehicle and the rear base maintain a communication link quality Q that is equal to or greater than a threshold value S. Each communication relay appliance is an autonomous mobile appliance, called Autonomous Robotic Communication Relay RCRA, capable of autonomously moving and of being positioned along the trajectory T followed by the VM in order to allow the quality of the communication link to be maintained.

Classes IPC  ?

• H04W 36/00 - Dispositions pour le transfert ou la resélection
• H04W 36/30 - La resélection étant déclenchée par des paramètres spécifiques par des données de mesure ou d’estimation de la qualité des liaisons
• H04W 36/32 - La resélection étant déclenchée par des paramètres spécifiques par des données de localisation ou de mobilité, p.ex. des données de vitesse

Abrégé

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.

Classes IPC  ?

• H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
• H10B 63/10 - Dispositifs RAM à changement de phase [PCRAM, PRAM]
• H10N 70/20 - Dispositifs de commutation multistables, p.ex. memristors

Abrégé

An integration system and method for the manufacture of radio frequency transmission front-end modules with radio frequency integrated circuit(s) and self-biased magnetic component(s) integrated on a “Wafer Level Packaging”-type technology. This integration makes it possible to design efficient, compact and low-cost front-end modules.

Classes IPC  ?

• H04B 1/04 - Circuits
• H04B 1/036 - Dispositions pour le refroidissement

Abrégé

A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives

Abrégé

A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level, and an interconnection level comprising vias, includes providing the first level and a dielectric layer, forming an etching mask having openings on the dielectric layer, and randomly depositing particles in the openings, by deposition then recirculating the particles on the surface of the etching mask. The dielectric layer is etched through mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

Classes IPC  ?

• H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif

Abrégé

A method for transferring an adhesive layer of thermoplastic polymer(s) from a first substrate to a second substrate including: depositing an antiadhesive layer on a first substrate, this layer being deposited on the periphery of the top face of said substrate, referred to as peripheral layer, thus providing on said top face a zone devoid of said layer, referred to as central zone; depositing an adhesive layer of thermoplastic polymer(s) on said central zone; depositing an antiadhesive layer on a second substrate, this layer being deposited on the top face of the second substrate excluding its periphery, said periphery being thus devoid of said antiadhesive layer; bonding the first substrate and the second substrate consisting of thermocompressing the top face of the first substrate onto the top face of the second substrate; removing the first substrate, whereby the second substrate remains, of which the top face is coated by the adhesive layer of thermoplastic polymer(s).

Classes IPC  ?

• C09J 7/20 - Adhésifs sous forme de films ou de pellicules caractérisés par leur support

Abrégé

A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.

Classes IPC  ?

• H10N 70/20 - Dispositifs de commutation multistables, p.ex. memristors
• H10B 63/00 - Dispositifs de mémoire par changement de résistance, p.ex. dispositifs RAM résistifs [ReRAM]
• H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation

Abrégé

The invention relates to a method for opening and discharging an electrochemical generator (10) comprising a negative electrode containing lithium or sodium and a positive electrode optionally containing lithium or sodium, the method comprising the following successive steps: - opening the electrochemical generator (10) in a cutting zone, with a cutting element (20), preferably having an electrical resistance greater than 100 mΩ, the electrochemical generator being opened while spraying the cutting zone with a first solution (100), - discharging the electrochemical generator by partially or completely submerging the electrochemical generator (10) in a second solution (200).

Classes IPC  ?

• B09B 3/35 - Déchiquetage, écrasement ou découpage
• H01M 10/44 - Méthodes pour charger ou décharger
• H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
• H01M 4/1395 - Procédés de fabrication d’électrodes à base de métaux, de Si ou d'alliages
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/054 - Accumulateurs à insertion ou intercalation de métaux autres que le lithium, p.ex. au magnésium ou à l'aluminium
• H01M 10/0569 - Matériaux liquides caracterisés par les solvants
• B09B 101/16 - Piles ou batteries

Produits et services

Dispositifs de calcul; systèmes de traitement de données; équipements de traitement de données; logiciels. Services d'information, de conseils et d'assistance en matière de recyclage de déchets et d'ordures. Infrastructure en tant que service (IaaS); plates-formes pour intelligence artificielle en tant que logiciel-service [SaaS]; fourniture d'informations technologiques concernant les innovations écologiques et respectueuses de l'environnement; services de conception et développement de logiciels d'évaluation et de calcul de données; études techniques; ingénierie; conception de verre et de produits en verre; services de recherche et d'analyses chimiques; services d'analyse chimique destinés à la conception; évaluation et essai de matériaux; conception et essais de nouveaux produits; réalisation d'études de faisabilité technique; services d'études de faisabilité en matière de conception; recherche et développement de nouveaux produits pour le compte de tiers, dans le domaine du verre; services de tests de conformité; services de test pour la certification de qualité ou de normes; test, analyse et évaluation des produits et services de tiers à des fins de certification.

Abrégé

The present invention concerns a method and a system of fault tolerant preparation of quantum polar code states, comprising: -a set of single qubit Pauli measurement circuits (3) configured to prepare an initial quantum system 5 of N = 2n single-qubit states associated to an initial quantum base, -a set of two qubit Pauli measurement circuits (7) configured to recursively prepare a quantum polar code |q2n)s °f codelength N = 2n, wherein at each recursive level k, where k = 1 to n, a set of 2n/2k quantum polar code states ||<72fc) j(k) = 1 to 2n/2k of codelengths 2k, siW referenced by corresponding sets Sj^ of indices comprising first and second sets of frozen indices = [17, ■ ■■, i7(k)} and X7(k) = {(i + !);(/<),..., 27k k)} is prepared, each quantum polar code state |q2k) being prepared by the application of two qubit Pauli measurement P ® P circuits on two equivalent polar code states 2^ ) 01 aanndd belonging to the output of the antecedent recursive level k — 1 and referenced by two corresponding sets of iinnddiicceess

Classes IPC  ?

• G06N 10/20 - Modèles d’informatique quantique, p.ex. circuits quantiques ou ordinateurs quantiques universels
• G06N 10/70 - Correction, détection ou prévention d’erreur quantique, p.ex. codes de surface ou distillation d’état magique
• G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit

Abrégé

The invention relates to a method for manufacturing a transfer structure (100) comprising the following steps: i) providing an intermediate substrate (110); ii) bonding chips (121, 122) to a first surface of an intermediate substrate (110), whereby a tiling of chips (121, 122) is formed, the chips (121, 122) covering both the central region and the peripheral region of the intermediate substrate (110), the chips (122) positioned in the peripheral region projecting beyond the surface of the intermediate substrate (110), the method further comprising a step iii) of trimming, after step ii), during which the ends of the chips (122) projecting beyond the surface of the intermediate substrate (110) are removed, whereby the chips (122) in the peripheral portion are truncated, and a transfer structure (100) comprising an intermediate structure (110) covered by a donor pseudo-substrate formed of a tiling of chips (121, 122) is obtained, the tiling of the chips (121, 122) being offset with respect to the crystallographic plane of the intermediate substrate (110).

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/762 - Régions diélectriques
• H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe

Abrégé

An electronic component includes a substrate, an active stack formed above the substrate and including: a layer of p-type doped Gallium Nitride GaN, disposed above the substrate, and a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN; the component including two side zones located on either side of the layer of p-type doped GaN, the two side zones being oxygen-implanted.

Classes IPC  ?

• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
• H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
• H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
• H01L 29/207 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV caractérisés en outre par le matériau de dopage
• H01L 29/66 - Types de dispositifs semi-conducteurs

Abrégé

Measuring device (1) intended to be disposed against a medium, the device extending between a contact face (10) intended to be applied facing the medium and a distal end (4), the device including a lateral wall (5) extending between the contact face and the distal end, the device including: at the level of the contact face (10), at least one admission opening (12) configured to collect a transcutaneous gas of interest emitted through the medium, the admission opening being through the contact face; a measuring chamber (20) including a gas sensor (23), the gas sensor being configured to measure a concentration of the gas of interest flowing through the measuring chamber; a collecting chamber (30) connected to the measuring chamber and delimited by an opening on the lateral wall, the collecting chamber including at least one lateral opening (34) through the lateral face or on the top wall of the collecting chamber so as to admit a vector gas into the collecting chamber; the device being characterized in that: the measuring chamber (20) is disposed between the contact face (10) and the collecting chamber (30); the device includes a pump (41) configured to drive a vector gas through the collecting chamber to an evacuation opening (42) so that driving the vector gas induces aspiration of the gas of interest from the contact face to the collecting chamber via the measuring chamber.

Classes IPC  ?

• A61B 5/145 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang
• A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale

Abrégé

A pixel circuit comprising: a light-sensing element; a first transistor having its control node coupled to a sense node and its source coupled to a readout path of the pixel circuit; and a reset voltage correction circuit comprising: a first switch configured to selectively couple an input node of the reset voltage correction circuit to a correction node, the input node being connected to the sense node or to the source of the first transistor, the correction node being coupled by a capacitance to the sense node; and a second switch configured to selectively couple the correction node to a reset voltage.

Classes IPC  ?

• H04N 25/65 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit appliqué au bruit de réinitialisation, p. ex. le bruit KTC lié aux structures CMOS par des techniques autres que le CDS
• H04N 25/771 - Circuits de pixels, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante

Abrégé

A method for joining, by brazing, a first part and a second part, the steps of preparing at least one of the parts including the following: a) providing a part intended to be brazed, the part being made of carbon or based on titanium, nickel or a CoCr alloy, b) performing inert gas plasma treatment on the part whereby the part is cleaned and an active surface is formed on the part, c) depositing a first layer comprising an active element on the active surface of the part, the active element being a carbide-forming element, d) depositing a second layer of gold on the first layer, whereby the first layer is protected from oxidation and good wetting is ensured.

Classes IPC  ?

• B23K 1/20 - Traitement préalable des pièces ou des surfaces destinées à être brasées, p.ex. en vue d'un revêtement galvanique
• B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C

Abrégé

A method for stripping U(VI) and an An(IV) from an organic solution including tri-n-butyl phosphate in an organic diluent, the solution containing U(VI) and the An(IV) present as U(VI) nitrate and An(IV) nitrate at concentrations such that the U(VI) nitrate concentration is higher than the An(IV) nitrate concentration, and the sum of the U(VI) nitrate and An(IV) nitrate concentrations is ≥55 g/L. The method includes contacting the organic solution and an aqueous solution of nitric and oxalic acids, the oxalic acid concentration in the aqueous solution and the O/A volume ratio selected so that the oxalic acid is deficient with respect to the stoichiometric conditions of a complete precipitation of U(VI) and actinide(IV), to obtain a precipitate containing the actinide(IV) in oxalate form and a fraction of the U(VI) in oxalate form with a U(VI)/actinide(IV) mass ratio of between 0.5 and 5; and separating the precipitate from the organic and aqueous solutions.

Classes IPC  ?

• G21F 9/12 - Traitements par échange d'ions

Abrégé

A method for controlling access of a user equipped with a terminal to a physical or logical resource, the method involving a secure cryptographic device forming a token corresponding to an access criterion, the access token being intended to generate a keystream masking a biometric reference of the user obtained by a biometric reader of the terminal. The biometric reference thus masked is encrypted by fully homomorphic encryption and stored in a database hosted by a remote server. An access control operator obtains a biometric characteristic of the user, homomorphically encrypts it and transmits it to the remote server. This server compares the first and second biometric models in the homomorphic domain and supplies the homomorphically-encrypted result of the comparison to the access control operator. The latter grants or denies access to the user according to the result of the comparison, after having decrypted it.

Classes IPC  ?

• H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système

Abrégé

(1+x)(2-2x)x7 7 (I) wherein x is selected from the range of from 0.1 to 0.2.

Classes IPC  ?

• C01G 33/00 - Composés du niobium
• C01G 41/00 - Composés du tungstène
• H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
• H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium

Abrégé

The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

The present invention pertains to a continuous process for the manufacture of an electrode, to the electrode obtained therefrom and to an electrochemical device comprising said electrode.

Classes IPC  ?

• H01M 4/04 - Procédés de fabrication en général
• H01M 4/139 - Procédés de fabrication
• H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges

Abrégé

A device and a method for the anonymous transmission of information, the transmission being a point-to-multipoint communication or a multipoint-to-multipoint communication between members of one and the same trusted network, a trusted network being predefined by a plurality of members and a plurality of independent proxies, the communication within a trusted network taking place on an anonymization network platform that masks the IP addresses of the members of the trusted network, the method being computer-implemented and comprising steps of: a member of a trusted network, comprising N′ members and N proxies, generating a plurality N of complementary data fragments, from an initial data packet, such that recombining the N complementary fragments makes it possible to reconstruct the initial data packet; the sending member transmitting, via the anonymization network platform, each generated complementary fragment to an independent proxy from among the N proxies, respectively; each independent proxy retransmitting, via the anonymization network platform, the complementary fragment received from the sending member to the plurality N′ of members of the trusted network; and each receiving member of the trusted network recombining the plurality N of received complementary fragments in order to reconstruct the initial data packet.

Classes IPC  ?

• H04L 9/40 - Protocoles réseaux de sécurité
• G06F 21/62 - Protection de l’accès à des données via une plate-forme, p.ex. par clés ou règles de contrôle de l’accès

Abrégé

The invention relates to a method for estimating the content of a gas-of-interest in a medium using a measurement device intended to be placed in contact with the medium, the device extending between a contact face intended to be applied against the medium and a distal end, the device comprising a side wall extending between the contact face and the distal end, and the device comprising: on the contact face, at least one intake opening configured to collect the gas-of-interest emitted by the medium, the intake opening extending through the contact face; a measurement chamber comprising a gas sensor, the gas sensor being configured to measure a concentration of the gas-of-interest flowing through the measurement chamber; a collection chamber (30) connected to the measurement chamber and delimited by the side wall, the collection chamber comprising at least one side opening (34) extending through the side face so as to admit ambient air into the collection chamber.

Classes IPC  ?

• A61B 5/145 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang
• G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
• A61B 5/083 - Mesure du taux de métabolisme en utilisant un essai respiratoire, p.ex. mesure du taux de consommation d'oxygène
• A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
• A61B 5/1477 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des procédés chimiques ou électrochimiques, p.ex. par des moyens polarographiques non invasifs
• A61B 5/00 - Mesure servant à établir un diagnostic ; Identification des individus

Abrégé

A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), A multichannel transmit and/or receive system, each channel includes a DAC and a sigma-delta modulator the transfer function of which is expressed thus: OUT(z)=IN(z)·FTS(z)+Q(z)·FTB(z), where OUT is the output signal of the sigma-delta modulator, IN is the input signal of the sigma-delta modulator, FTS is the transfer function of the input signal, Q is the quantization noise and FTB is the transfer function of the quantization noise, the second terms of the transfer function of the sigma-delta modulator only being distinct from one another for two channels Vi, Vj, in order to decorrelate the quantization noise of distinct channels, the first term of said transfer function for channel Vi being equal to the first term of said transfer function for channel Vj.

Classes IPC  ?

• H03M 3/00 - Conversion de valeurs analogiques en, ou à partir d'une modulation différentielle
• H03M 1/08 - Compensation ou prévention continue de l'influence indésirable de paramètres physiques du bruit

Abrégé

A method for manufacturing at least one photovoltaic cell includes the following steps: (a) providing at least one plate, the plate having a first face and a second face opposite the first face; (b) providing a support device; (c) positioning the plate placing the first face of the plate in contact with the support device; (d1) forming a first conductive material on the first face of the plate; (d2) forming a second conductive material on the second face of the plate. At least one of the first and second conductive materials is transparent, the support device includes at least one wire, and, during all or part of step (d1), the first face of the plate bears on the wire.

Classes IPC  ?

• H01L 31/05 - Moyens d’interconnexion électrique entre les cellules PV à l’intérieur du module PV, p.ex. connexion en série de cellules PV

Abrégé

A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the Si3N4 waveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.

Classes IPC  ?

• G02B 6/132 - Circuits optiques intégrés caractérisés par le procédé de fabrication par le dépôt de couches minces
• H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
• H01L 31/028 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des éléments du groupe IV de la classification périodique
• H01L 31/105 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PIN
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

A method for executing a machine code with a computer, including constructing a signature for a current instruction on the basis of signals generated by a stage of a hardware processing path, this stage being a decoder or a stage following the decoder in the hardware processing path, and on the basis of the preceding signature constructed for an instruction which precedes it, then checking the integrity of the executed machine code by comparing the signature constructed for the current instruction with a prestored reference signature, then only when the integrity of the current instruction has been checked successfully, decrypting a cryptogram of the following instruction using the signature constructed for the current instruction.

Classes IPC  ?

• G06F 9/30 - Dispositions pour exécuter des instructions machines, p.ex. décodage d'instructions
• H04L 9/08 - Répartition de clés
• H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système

Abrégé

A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 19/08 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage utilisant des éléments magnétiques utilisant des couches minces dans une structure plane
• H10B 61/00 - Dispositifs de mémoire magnétique, p.ex. dispositifs RAM magnéto-résistifs [MRAM]
• H10N 50/80 - Dispositifs galvanomagnétiques - Détails de structure
• H10N 52/00 - Dispositifs à effet Hall

Abrégé

A multichannel transmitter device includes, on each channel: a transmission processing channel designed to process an input signal and comprising a predistortion block applying a predistortion to the input signal on the basis of predistortion coefficients, a DAC, a first analogue filter, a power amplifier and a sigma-delta encoder between the predistortion block and the digital-to-analogue converter and designed to carry out notably a quantization of the predistortion block; a return channel associated with the transmission processing channel and comprising a block for estimating predistortion coefficients so as to estimate predistortion coefficients on the basis of the input signal and of a feedback signal; the transmitter device wherein the block for estimating predistortion coefficients is designed to estimate the predistortion coefficients on the basis of at least the input signal and of a signal resulting from the subtraction, from the feedback signal, of a signal representing the quantization noise resulting from the quantization carried out by the sigma-delta encoder.

Classes IPC  ?

• H04B 1/04 - Circuits

Abrégé

An interconnection structure includes a substrate formed by a first electrically insulating and optically transparent material, the substrate including a first face and an opposite second face, the first face defining a plane of the substrate, and a plurality of transparent electrodes, wherein the transparent electrodes pass through the substrate from the first face to the second face of the substrate in parallel to each other, and are electrically insulated from each other by the first electrically insulating and optically transparent material.

Classes IPC  ?

• G01N 33/483 - Analyse physique de matériau biologique
• G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné

Abrégé

A system and method for controlling operating modes of a system, each operating mode being implemented by an execution of one or more software components. This control system includes software components called elementary components, each elementary component having at least one input able to receive input data and/or at least one output able to transmit output data; and at least one software meta-component including one or more internal wiring diagrams, each internal wiring diagram defining interconnections between inputs and outputs of elementary components and/or meta-components, a transition logic between states defining a current state of said system and a sequence between states at least some of the states corresponding to an implementation of an internal wiring diagram, a mechanism for controlling the internal configurations, and a programming interface providing services/functions implementing at least one internal wiring scheme.

Classes IPC  ?

• G05B 19/4155 - Commande numérique (CN), c.à d. machines fonctionnant automatiquement, en particulier machines-outils, p.ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'u caractérisée par le déroulement du programme, c.à d. le déroulement d'un programme de pièce ou le déroulement d'une fonction machine, p.ex. choix d'un programme
• B25J 9/16 - Commandes à programme

Abrégé

A method may form an electroconductive and hydrophobic microporous layer (MPL) at an active layer surface configured for an electrochemical converter, including: (a) providing a non-aqueous dispersion, called “ink”, including a carbon-based particulate material and an organic solvent; (b) forming an ink deposit at the active layer surface; and (c) evaporating the solvent(s) to form a microporous layer, simultaneously and/or subsequently to the forming (b). The ink may include poly(vinylidene fluoride-co-hexafluoropropene), dissolved in the organic solvent. Ink may prepare such a microporous layer, and a multilayer structure including an active layer supported by a solid electrolyte membrane and contacting, at its face on the opposite side the solid membrane, with a microporous layer obtained by the such a method. A membrane-electrode assembly may include such a multilayer structure. Such an MEA may be used in an individual cell of an electrochemical converter, in particular in a PEMFC.

Classes IPC  ?

• C09D 11/52 - Encres conductrices de l’électricité
• C09D 11/033 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le solvant
• C09D 11/037 - Encres d’imprimerie caractérisées par des particularités autres que la nature chimique du liant caractérisées par le pigment
• C09D 11/106 - Encres d’imprimerie à base de résines artificielles contenant des composés macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
• H01M 8/1004 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments à combustible; Leur fabrication Éléments à combustible avec électrolytes solides caractérisés par les ensembles membrane-électrodes [MEA]

Abrégé

The invention is based on a method for producing an individualisation zone of a chip comprising a component level and a contact level comprising vias, the method comprising the following steps: providing the components level and a dielectric layer, forming a mask on the dielectric layer, etching the dielectric layer through mask openings so as to form openings opening onto the contact zones of the components level, forming fluorinated residue by inputting fluorinated species on at least some contact zones, the openings thus comprising openings with fluorinated residue and openings without residue, filling the openings so as to form the vias of the contact level, said vias comprising functional vias at the openings without residue and altered vias at the openings with residue.

Classes IPC  ?

• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
• H01L 21/8234 - Technologie MIS
• H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p.ex. marques de repérage, schémas de test

Abrégé

An image sensor provided with a pixel including a photosensitive region formed in a semiconductor substrate and surrounded by a peripheral isolation trench; a sense node formed on a charge collecting region; a charge transfer gate around the sense node; a well; the pixel being provided with a so-called “detection acceleration” transistor configured to, during a so-called “charge overflow detection” operation, be switched on so as to weaken a potential barrier generated by the transfer gate and thus to favour an overflow of photogenerated charges to the sense node of the photosensitive region and to accelerate detection of this overflow.

Classes IPC  ?

• H04N 25/707 - Pixels pour la détection d’événements
• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
• G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
• H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixel; Capteurs d'images commandés par événement; Sélection des pixels à lire en fonction des données d'image
• H04N 25/77 - Circuits de pixels, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs

Abrégé

A method for determining a concentration of an isotope in a fluid, the isotope absorbing neutrons, the method comprising placing a plurality of neutron detectors at various distances from the fluid; irradiating the fluid by a neutron-emitting source, the latter being placed so that emitted neutrons pass through the fluid before reaching the detectors; measuring, by each detector, a quantity representative of an amount of neutrons reaching the detector; and based on the measurements resulting from the measuring, estimating a concentration of the isotope in the fluid. Further, the estimating step includes taking into account a database containing an estimate of the quantity measured by each detector and based on the database, and on the measurements resulting from the measuring step, estimating the concentration of the isotope in the fluid.

Classes IPC  ?

• G01N 23/09 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en neutrons
• G01N 23/02 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau
• G01N 23/12 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le matériau étant un fluide ou un solide granulé en écoulement
• G01T 7/00 - MESURE DES RADIATIONS NUCLÉAIRES OU DES RAYONS X - Détails des instruments de mesure des radiations
• G01T 3/00 - Mesure de flux de neutrons

Abrégé

A transduction detection device includes a substrate, at least one movable ground relative to the substrate and a suspended stress gauge provided with a piezoresistive element which includes a first anchoring and a second anchoring, different from the first anchoring, relative to the movable ground, wherein it includes at least one thermal dissipator element thermally conductively connected: to a connection portion of the piezoresistive element located outside of the anchorings, and to a thermal discharge part.

Classes IPC  ?

• G01P 15/12 - Mesure de l'accélération; Mesure de la décélération; Mesure des chocs, c. à d. d'une variation brusque de l'accélération en ayant recours aux forces d'inertie avec conversion en valeurs électriques ou magnétiques par modification d'une résistance électrique

Abrégé

An optoelectronic device includes at least one pixel, each pixel comprising an optical resonator comprising a photodetecting structure confined between a reflective metal layer and a second reflective metal layer; and a readout integrated circuit arranged on a substrate and comprising at least one buried readout electrode dedicated to the pixel and at least one metal or dielectric outer layer. The assembly comprising at least the reflective metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The first metal layer is connected to the readout electrode by way of a metal via passing through the optical resonator structure and the planar assembly structure. The metal via is electrically isolated from the photodetecting structure and from the planar assembly structure.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images

Abrégé

A device for unwinding a strand from a bobbin, which includes: a plate supporting at least one bobbin holder, which extends along an axis substantially perpendicular to the plate and is intended to receive a bobbin capable of rotating about the axis of the bobbin holder; an element for translationally moving the bobbin along the axis of the bobbin holder; and an element for controlling the movement element and configured so as to maintain the strand leaving the bobbin in a substantially constant position along the axis of the bobbin holder.

Classes IPC  ?

• B29C 70/38 - Empilage automatisé, p.ex. utilisant des robots, par application de filaments selon des modèles prédéterminés
• B65H 49/32 - Supports ou cadres
• B29C 70/32 - Façonnage par empilage, c.à d. application de fibres, de bandes ou de feuilles larges sur un moule, un gabarit ou un noyau; Façonnage par pistolage, c.à d. pulvérisation de fibres sur un moule, un gabarit ou un noyau sur un moule, un gabarit ou un noyau rotatifs

Abrégé

The invention relates to a method and a system for the automated detection of the risk of fraud in a monitored system, based on data streams generated by said monitored system and characterizing events performed or generated by operators in said monitored system. The method includes: a pre-processing (30-38) of at least one set of data recorded over a period of time, so as to obtain a subset of critical events associated with an operator; the iterative application of a first parameterized estimation process (52,56) for a risk of fraud, so as to obtain a first legitimacy score and a first associated probability of occurrence; the iterative application of a second parameterized estimation process (54,58) for a risk of fraud, so as to obtain a second legitimacy score and a second associated probability of occurrence, and the comparison (60) of the results of said first and second processes, for determining (64) whether said operator is a legitimate operator or a fraudulent operator.

Classes IPC  ?

• H04L 9/40 - Protocoles réseaux de sécurité

Abrégé

The invention relates to a method for determining a detectable minimum impedance of a fault by means of an analysis of a cable by reflectometry, the method comprising steps of: - carrying out (301) a measurement, referred to as a reflectogram, of the time-domain impulse response of a reference signal propagated through the cable from an injection point then back-propagated to a measurement point, - determining (302) a threshold of detection of amplitude peaks in the reflectogram, the threshold being proportional to the standard deviation of the measurement, - determining (303) an estimate of the attenuation of the signal based on the measurement, the attenuation being considered constant along the cable, - determining (304) an estimate of the coefficient of reflection of the signal from a fault characterized by an amplitude in the reflectogram equal to the detection threshold, based on the attenuation of the signal and on the measurement, - determining (305) an estimate of the characteristic impedance of said fault, equal to the detectable minimum impedance of a fault.

Classes IPC  ?

• G01R 31/11 - Localisation de défauts dans les câbles, les lignes de transmission ou les réseaux en utilisant des méthodes de réflexion d'impulsion
• H04B 3/46 - Surveillance; Tests

Abrégé

The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: —a photosensitive region formed in the semiconductor substrate; —a diffraction structure formed on the side of an illumination surface of the photosensitive region; and —a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region.

Classes IPC  ?

• G01J 3/447 - Spectrométrie par polarisation
• G01J 3/18 - Production du spectre; Monochromateurs en utilisant des éléments diffractants, p.ex. réseaux

Abrégé

A contactless detection device, comprising a detection surface; a plurality of actuators acoustically coupled to the detection surface; an ultrasonic acoustic wave detector; an electronic and/or IT computer, the device being configured to detect one or more element(s) by repeating the following steps: focusing ultrasonic acoustic waves emitted by the actuators into a focusing region, obtained from waves emitted by the actuators and to which a first time reversal method has been applied, and measuring a duration between emitting the waves and receiving an echo of these waves by the detector, wherein the computer is configured to calculate the control signals such that the detection waves are focused successively into focusing regions of different shape and/or sizes.

Classes IPC  ?

• G06F 3/043 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
• G01S 15/87 - Combinaisons de systèmes sonar
• G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
• G01R 23/02 - Dispositions pour procéder à la mesure de fréquences, p.ex. taux de répétition d'impulsions; Dispositions pour procéder à la mesure de la période d'un courant ou d'une tension

Abrégé

A depositing head for a plurality of rovings each coming from a bobbin and having a longitudinal axis, the depositing head including a plurality of line roller pairs for rolling the rovings from the bobbins, each roller pair being intended to be associated, in operation, with only a given single roving and including an upstream roller and a downstream roller relative to the direction of unwinding of the rovings, the rollers rotating independently of one another.

Classes IPC  ?

• B29C 70/32 - Façonnage par empilage, c.à d. application de fibres, de bandes ou de feuilles larges sur un moule, un gabarit ou un noyau; Façonnage par pistolage, c.à d. pulvérisation de fibres sur un moule, un gabarit ou un noyau sur un moule, un gabarit ou un noyau rotatifs
• B29C 70/38 - Empilage automatisé, p.ex. utilisant des robots, par application de filaments selon des modèles prédéterminés
• B29C 70/16 - Façonnage de matières composites, c. à d. de matières plastiques comprenant des renforcements, des matières de remplissage ou des parties préformées, p.ex. des inserts comprenant uniquement des renforcements, p.ex. matières plastiques auto-renforçantes des renforcements fibreux uniquement caractérisées par la structure des renforcements fibreux utilisant des fibres de grande longueur, ou des fibres continues

Abrégé

A silica optical fiber resistant to radiations includes a core; a sheath surrounding the core; a polymer coating encasing the sheath, the coating being able to form hydrogen by radiolysis under the effect of the radiations so as to diffuse it into the optical fiber. An optical fiber device comprising at least one such radiation-resistant silica optical fiber.

Classes IPC  ?

• G02B 6/02 - Fibres optiques avec revêtement

Abrégé

A computing circuit for computing a weighted sum of a set of first data using at least one parsimony management circuit includes a first buffer memory for storing all or some of the first data delivered sequentially and a second buffer memory for storing all or some of the second data delivered sequentially. The parsimony management circuit furthermore comprises a first processing circuit able: to analyze the first data in order to search for the first non-zero data and define a first skip indicator between two successive non-zero data, and to control the transfer, to the distribution circuit, of a first datum read from the first data buffer memory on the basis of the first skip indicator. The parsimony management circuit furthermore comprises a second processing circuit able to control the transfer, to the distribution circuit, of a second datum read from the second data buffer memory on the basis of the first skip indicator.

Classes IPC  ?

• G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques

Abrégé

Method for controlling an electric actuation assembly (1), the method comprising the following steps: Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; establishing, on the basis of the first characteristic function, the second characteristic function, a magnetic constant of the motor (11) and a reduction ratio of a gearbox (12), and a control correction coefficient; Method for controlling an electric actuation assembly (1), the method comprising the following steps: applying a plurality of known first output forces and recording a plurality of first input intensities for a first movement direction of the output; establishing, by interpolation, a first characteristic function; applying a plurality of second known output torques and recording (2) a plurality of second input currents for a second movement direction of the output opposite to the first direction; establishing, by interpolation, a second characteristic function; establishing, on the basis of the first characteristic function, the second characteristic function, a magnetic constant of the motor (11) and a reduction ratio of a gearbox (12), and a control correction coefficient; controlling the actuation assembly (1) by applying the control correction coefficient.

Classes IPC  ?

• G05B 19/414 - Structure du système de commande, p.ex. automate commun ou systèmes à multiprocesseur, interface vers le servo-contrôleur, contrôleur à interface programmable
• G05B 19/4103 - Interpolation numérique

Abrégé

A method for confidentially querying the presence of a record in a database hosted by a server, the records being stored in the database in the form of digital footprints obtained by hashing a record by a public hash function. The footprints are masked by a stream cipher using a symmetric key of a first user. The first user may grant a second user authorisation to query the database by transmitting the inverse masks of various rows, encrypted by the public key of an additive homomorphic cryptosystem of the second user. The rows of the database are unmasked in the homomorphic domain and the second user transmits an encrypted request to query the base according to a PIR protocol. The second user can decrypt the response from the server using the private key of their homomorphic cryptosystem and determine whether the footprint sought is present in the response thus decrypted.

Classes IPC  ?

• G06F 16/2457 - Traitement des requêtes avec adaptation aux besoins de l’utilisateur
• H04L 9/00 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité
• G06F 21/31 - Authentification de l’utilisateur

Abrégé

A method for the cryogenic grinding of at least one powder comprising the following steps: (a) introducing a cryogenic fluid into an attrition mill comprising attrition means, (b) introducing the powder or powders into the attrition mill, and (c) setting the attrition mill in rotational motion, and wherein—the ratio VMA/(VMA+VFC) of the volume of the attrition means VMA to the sum of the volume of the attrition means VMA and the volume of the cryogenic fluid VFC is comprised between 0.2 and 0.8, and the rotational speed of the attrition mill during step (c) is between 100 rpm and 20,000 rpm. Further, particles of metal or metal alloy, to the use thereof, to a coating method employing them and to the use of such a coated material.

Classes IPC  ?

• B02C 17/10 - Désagrégation au tonneau, c. à d. par des appareils constitués par une cuve où les produits à désagréger sont chargés, avec ou sans éléments particuliers de désagrégation tels que billes ou boulets avec un petit nombre d'organes de désagrégation disposés sur la cuve
• B02C 17/18 - Désagrégation au tonneau, c. à d. par des appareils constitués par une cuve où les produits à désagréger sont chargés, avec ou sans éléments particuliers de désagrégation tels que billes ou boulets - Parties constitutives
• B02C 17/20 - Organes de désagrégation

Abrégé

A thin film on a surface of a solid substrate, including: a) spraying on the surface: —a colloidal suspension including solid nanoparticles (or colloids) of an inorganic compound dispersed in a solvent to obtain a wet layer of the colloidal suspension on the surface; or —a suspension including an inorganic compound in polymeric form in a solvent, to obtain a wet layer of the suspension of the inorganic compound in polymeric form on the surface; or —a solution or suspension of an organic polymer in a solvent, to obtain a wet layer of the solution or suspension of the organic polymer on the surface; b) drying the wet layer; c) optionally, heat-treating the wet layer that has undergone the drying step, whereby the thin film is obtained; wherein: the solvent comprises at least 95% by weight of water, and the drying is carried out in a static atmosphere.

Classes IPC  ?

• C09D 5/33 - Peintures réfléchissantes
• C09D 1/00 - Compositions de revêtement, p.ex. peintures, vernis ou vernis-laques, à base de substances inorganiques
• C09D 5/02 - Peintures émulsions
• C09D 129/04 - Alcool polyvinylique; Homopolymères ou copolymères partiellement hydrolysés d'esters d'alcools non saturés avec des acides carboxyliques saturés
• C09D 171/02 - Oxydes de polyalkylène
• C09D 7/61 - Adjuvants non macromoléculaires inorganiques
• C09D 7/20 - Diluants ou solvants
• C09D 7/40 - Adjuvants

Abrégé

The invention relates to an electrochemical cell having: ∘a membrane electrode assembly (2); ∘two retaining plates (10); ∘a single seal (20) extending around the membrane electrode assembly (2) and disposed in contact with the two retaining plates (10); ∘at least one intermediate leaktight sheet (30) extending around the membrane electrode assembly (2), disposed between the latter and the seal (20) and joined in a leaktight manner to the membrane (4) on the one hand and to the seal (20) on the other.

Classes IPC  ?

• H01M 8/0273 - Moyens d’étanchéité ou de support autour des électrodes, des matrices ou des membranes avec des moyens d’étanchéité ou de support sous forme d’un cadre
• H01M 8/0286 - Procédés de formation des joints d’étanchéité
• H01M 8/1018 - Matériaux d’électrolyte polymère
• C25B 9/60 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Éléments de structure des cellules; Assemblages d'éléments de structure, p.ex. assemblages d'électrode-diaphragme; Caractéristiques des cellules relatives aux procédés Éléments de structure des cellules

Abrégé

An electronic device includes first and second quantum dots disposed along a direction, first and second control gates associated with said quantum dots, and a magnet configured to generate two opposite spin states at each of the first and second quantum dots. The magnet includes first and second magnetic domains distributed along the direction and separated by a domain wall. The magnetic domains respectively have first and second magnetisations of opposite directions in the direction. The first and second quantum dots thus receive first and second magnetic field gradients.

Classes IPC  ?

• G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit

Abrégé

The present description concerns a method of acquisition of distances from a sensor to a scene, comprising a number N of consecutive capture sub-phases Ci, with N an integer greater than or equal to 2 and i an integer index ranging from 1 to N, each sub-phase Ci comprising: supplying a laser beam having an optical frequency (f) linearly varying over a frequency range of width Bi for a time period Ti; delivering, from the laser beam, a reference beam and a useful beam; and illuminating the scene with the useful beam and illuminating at least one pixel row with a superposition of the reference beam and of a reflected beam. An absolute value of a ratio Bi/Ti is different for each capture sub-phase Ci.

Classes IPC  ?

• G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
• G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
• G01S 7/4911 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails des systèmes non pulsés Émetteurs

Abrégé

The disclosure relates to a method for characterizing biological particles in aerosol form, such as suspended in an ambient gas, by laser-induced breakdown spectrometry and an associated system.

Classes IPC  ?

• G01N 15/14 - Recherche par des moyens électro-optiques
• G01N 33/68 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique faisant intervenir des protéines, peptides ou amino-acides

Abrégé

A polymer of hyaluronic acid modified by the grafting thereto of at least one of the functions —SO3− and aromatic rings may be used as dopant for a polymer formed from one or monomers chosen from EDOT, ProDOT, and derivatives thereof. An aqueous suspension, or ink, and materials, in particular hydrogels, based on at least one PEDOT and/or PProDOT polymer may be doped by at least one such modified hyaluronic acid polymer. Such modified hyaluronic acid polymers may be used in bioelectronic or biosensor devices.

Classes IPC  ?

• C08B 37/08 - Chitine; Sulfate de chondroïtine; Acide hyaluronique; Leurs dérivés
• C08J 3/24 - Réticulation, p.ex. vulcanisation, de macromolécules
• C08L 65/00 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant une liaison carbone-carbone dans la chaîne principale; Compositions contenant des dérivés de tels polymères 
• C09D 11/52 - Encres conductrices de l’électricité
• C09D 11/102 - Encres d’imprimerie à base de résines artificielles contenant des composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone
• C08J 3/075 - Gels macromoléculaires

Abrégé

A method for characterizing a mobile particle in a sample includes acquisition of at least one image of the sample during an acquisition period, using an image sensor and formation of a series of images, the series of images comprising at least one image; use of each image of the series of images as input image of a detection convolutional neural network, the detection convolutional neural network being configured to detect the particles and to produce, from each image, an output image on which each detected particle is assigned a distribution of intensity, centered on the particle and extending around the particle; for each detected particle, from each output image, estimation of a position of each detected particle in each image of the series of images; and characterization of each detected particle from the estimation of the position established from each image of the series of images.

Classes IPC  ?

• G01N 15/14 - Recherche par des moyens électro-optiques
• G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p.ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersections; Analyse de connectivité, p.ex. de composantes connectées

Abrégé

A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/872 - Diodes Schottky
• H01L 29/868 - Diodes PIN
• H01L 21/8252 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie III-V
• H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
• H01L 27/085 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ

Abrégé

A device for improving the precision of a biomagnetic image of a patient is provided. The device comprises a covering, a plurality of markers and at least five three-axis coils. Three-axis coils and markers of the plurality of markers are placed at the same location on the covering so that, when the covering is positioned on the patient, singular points of the part of the patient can be detected by magnetic resonance imaging and by biomagnetic imaging (MEG, MCG).

Classes IPC  ?

• A61B 5/243 - Détection de champs biomagnétiques, p.ex. de champs magnétiques produits par des courants bioélectriques spécialement adaptée aux signaux magnétocardiographiques [MCG]
• A61B 5/245 - Détection de champs biomagnétiques, p.ex. de champs magnétiques produits par des courants bioélectriques spécialement adaptée aux signaux magnétoencéphalographiques [MEG]
• A61B 5/00 - Mesure servant à établir un diagnostic ; Identification des individus

Abrégé

A nano- or microparticle comprising a matrix consisting of or comprising at least one polyvinyl alcohol (PVA) and dispersed therein, ferrite, and a method for producing the same. Further, the use of these nano- or micro-particles for the preparation and the implementation of devices that can be detected by giant magnetoresistance sensors (GMR sensors) as biological diagnostic tools.

Classes IPC  ?

• A61K 49/18 - Préparations de contraste pour la résonance magnétique nucléaire (RMN); Préparations de contraste pour l'imagerie par résonance magnétique (IRM) caractérisées par un aspect physique particulier, p.ex. émulsions, microcapsules, liposomes

Abrégé

A method for generating an evidence of the time elapsed between two successive events occurring within a node of an asynchronous network, for example between two transactions emitted by such a node intended to a distributed register (ledger). The node is provided with an embedded system comprising a TPM module generating a control clock, a system clock within a TEE environment and a precision clock. The node verifies the coherence of the clocks by comparing the measurements of the time elapsed between two successive transactions, the measurements having been performed by means of the different clocks. In case of coherence of the measurements, the node emits a transaction proving the elapsed time intended to the distributed register. A verifier node may verify this evidence and certifies that the evidence is verified by emitting a validation transaction to the distributed register.

Classes IPC  ?

• G06F 1/06 - Générateurs d'horloge produisant plusieurs signaux d'horloge
• H04L 9/40 - Protocoles réseaux de sécurité

Abrégé

The invention relates to a neuromorphic circuit (10) for physically producing a neural network. The neuromorphic circuit (10) comprises: - at least one component (26) that is capable of being excited according to a plurality of excitation eigenmodes with a respective population and of having a plurality of excitation configurations, - a unit (28) for configuring the component (26) capable of exciting the component (26) in order to obtain an excitation configuration chosen on the basis of a desired neural network architecture, and - a unit (30) for interrogating the component (26) capable of selectively modifying the populations of first excitation eigenmodes and of measuring the populations of second excitation eigenmodes, the first and second excitation eigenmodes being the excitation modes of the input neurons and the output neurons of the desired architecture, respectively.

Classes IPC  ?

• G06N 3/067 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens optiques
• G06N 3/065 - Moyens analogiques
• G06N 3/084 - Rétropropagation, p.ex. suivant l’algorithme du gradient
• G06N 3/049 - Réseaux neuronaux temporels, p.ex. éléments à retard, neurones oscillants ou entrées impulsionnelles
• H01F 10/13 - Alliages métalliques amorphes, p.ex. métaux vitreux
• G02F 3/00 - OPTIQUE ÉLÉMENTS OPTIQUES LOGIQUES; CONVERTISSEURS OPTIQUES ANALOGIQUES/NUMÉRIQUES Éléments optiques logiques; Dispositifs bistables optiques