According to the present disclosure there is provided a front-end module comprising a first antenna port and a second antenna port, a first filter forming a first signal path with the first antenna port and a second filter forming a second signal path with the second antenna port, the first or second filter being an adjustable filter. There is also provided a wireless device.
An audio amplification system can include a digital audio path configured to provide a digital signal, and an audio amplifier configured to receive the digital signal as an input signal and generate an output signal. The audio amplification system can further include one or more features configured to support operation of the audio amplification system. In some embodiments, such an audio amplification system can be implemented in a wireless audio device such as a wireless headphone or a wireless earphone.
Disclosed is a diversity receive radio frequency front-end architecture with support for carrier aggregation and multiple-input/multiple-output. The front-end architecture can include multi-stage low noise amplifiers. Outputs from multiple initial low noise amplifier stages can be switched into each secondary low noise amplifier stage, thereby reducing the amount of componentry. The secondary low noise amplifier stages can be dynamically tuned depending on a currently active band and can be relatively broadband compared to the initial low noise amplifier stages.
A packaging substrate assembly for fabricating a packaged module can include a packaging substrate having a surface, and an array of conductive pads implemented on the surface. The assembly can further include a conductive post formed over each conductive pad, with the conductive post including a first portion having a lateral dimension formed over the conductive pad and a second portion having a lateral dimension formed over the first portion. In some embodiments, the lateral dimension of the first portion is less than the lateral dimension of the second portion. In some embodiments, a dielectric layer can be implemented over the surface to cover the conductive pads and surround the first portion of each conductive post.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
Doherty power amplifier systems are provided herein. In certain embodiments, a Doherty power amplifier system includes a main amplifier, a first auxiliary amplifier, and a second auxiliary amplifier that operate in combination with one another to amplify an RF signal. The Doherty power amplifier system further includes a bias circuit that biases the first and second auxiliary amplifiers based on an envelope of the RF signal to control a state of the Doherty power amplifier system. For example, in certain implementations, the first and second auxiliary amplifiers are selectively activated based on a power level indicating by the envelope.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
6.
SURFACE ACOUSTIC WAVE DEVICES WITH HIGH VELOCITY HIGHER-ORDER MODE
In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode embedded in a surface of the piezoelectric substrate to support a high-order mode of a surface acoustic wave having a wavelength λ and a phase velocity greater than 8,000 m/s. Such a high-order mode can include a third-order mode, and the phase velocity can be at least 9,000 m/s. In some embodiments, such a surface acoustic wave device can be implemented in products such as a radio-frequency filter, a radio-frequency module and a wireless device.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode implemented on a surface of the piezoelectric substrate, such that the surface acoustic device supports a surface acoustic wave having a wavelength λ and a phase velocity less than 3,000 m/s with an electromechanical coupling coefficient of at least 9.0. In some embodiments, the phase velocity less than 2,000 m/s, and the surface acoustic wave can include a lowest asymmetry (A0) mode. In some embodiments, such a surface acoustic wave device can be implemented in products such as a radio-frequency filter, a radio-frequency module and a wireless device.
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
8.
DUAL-SIDED PACKAGED RADIO-FREQUENCY MODULE HAVING BALL GRID ARRAY EMBEDDED IN UNDERSIDE MOLDING
A dual-sided packaged radio-frequency (RF) module comprises a packaging substrate having a first surface with at least one RF circuit component mounted thereon and a second surface opposite to the first surface with at least one circuitry component mounted thereon, at least one contact feature attached to the second surface of the packaging substrate, a vertical extension of the at least one contact feature being larger than a distance between a bottom surface of the at least one circuitry component and the second surface of the packaging substrate, an underside molding encapsulating the at least one circuitry component and the at least one contact feature, a bottom surface of the underside molding being flush with the bottom surface of the at least one circuitry component, and a trench structure formed in the underside molding around the at least one contact feature.
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
9.
HEAT TRANSFER FROM NON-GROUNDABLE ELECTRONIC COMPONENTS
An electronic package is provided. The electronic package comprises an electronic component, a substrate, a ground plane, a thermally conductive pathway and at least one thermally conductive member. The ground plane is enclosed in or supported by the substrate. The electronic component includes a non-groundable thermal output and is mounted to the substrate. The thermally conductive pathway extends within the substrate between an interface exposed on a surface of the substrate and the ground plane. The thermally conductive pathway is configured to electrically isolate the interface from the ground plane. The thermally conductive member couples the output to the interface. An electronic device comprising such an electronic package is also provided. A method of manufacturing such an electronic package is also provided.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
A carrier aggregation circuit that includes a primary signal path for processing a first frequency band, the first frequency band being a TDD frequency band, and a secondary signal path for processing a second frequency band. The primary signal path includes a first TDD filter configured to process receive signals in the first frequency band and a second TDD filter configured to process transmit signals in the first frequency band, the first TDD filter and the second TDD filter including one or more corresponding initial stages that are identical. Related front-end architectures, front-end modules, and wireless devices for carrier aggregation are also provided.
An electrical package can include a substrate having a first side and a second side opposite the first side. One or more electrical components mounted to the substrate, and a plurality of electrically conductive interconnect members can be coupled to the second side of the substrate. At least one of the interconnect members can be L-shaped. The L-shaped interconnect member with can be positioned at or proximate one of the corners. The interconnect members can be arranged as a two-dimensional array, with first interconnect members each occupying a single array location, and second interconnect members each occupying at least three array locations that are arranged nonlinearly. The package can be a dual-sided molded package.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
12.
MECHANICALLY REINFORCED ELECTRICAL PACKAGES WITH ELONGATED INTERCONNECT MEMBERS
An electrical package can include a substrate having a first side and a second side opposite the first side. One or more electrical components mounted to the substrate, and a plurality of electrically conductive interconnect members can be coupled to the second side of the substrate. At least one of the interconnect members can have an elongated shape with a length that is longer than a width. The interconnect member with the elongated shape positioned can be at or proximate one of the corners. The interconnect members can be arranged as a grid, with first interconnect members each occupying a single grid cell, and second interconnect members each occupying at least two grid cells. The second interconnect members can have a shape of two of the first interconnect members coupled by a bridge portion.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
Systems and methods for tuning multiplexer filters are disclosed. In one aspect, a multiplexer includes a first filter coupled to a common node, the first filter configured to pass a first band, a second filter coupled to the common node, the second filter configured to pass a second band, and at least one electrical component configured to generate a notch at a frequency between the first band and the second band.
H03H 7/46 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
14.
TEMPERATURE COMPENSATED SURFACE ACOUSTIC WAVE DEVICES WITH MULTIPLE BURIED MASS LOADING STRIPS
An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, first strips formed of a first material having a density greater than a density of the first dielectric film disposed within the first dielectric film over tips of the interdigitated electrode fingers in the edge regions of the IDT electrodes, and second strips formed of a second material having a density greater than the density of the first dielectric film disposed within the first dielectric film in the gap regions of the IDT electrodes, laterally spaced from the first strips in a direction perpendicular to a direction of propagation of a main acoustic wave through the acoustic wave device, and extending only partially over the gap regions.
Aspects of the disclosure include a front-end module comprising one or more receive ports configured to be coupled to a transceiver, at least one low-noise amplifier configured to be coupled to the one or more receive ports, one or more antenna ports configured to be coupled to one or more respective antennas, and a multiplexer coupled to the one or more receive ports and to the one or more antenna ports, the multiplexer being configured to route a signal received at the one or more antenna ports to a selected receive port of the one or more receive ports.
A system includes a plurality of line cards and a timing card. A clock generation circuit on the timing card generates a clock signal which is pulse width modulated according to information to be transmitted. A clock line supplies the pulse width modulated clock signal to the line cards. The timing card sends a first control word to the plurality of line cards over the clock line after sending a beacon. The first control word includes a size field specifying a first length of first data following the first control word. The timing card sends time of day information over the clock line to the line cards following the first control word. The time of day information may be encrypted. A second control word follows the time of day information. One or more additional control words can follow the second control word before the next beacon.
H04L 7/00 - Dispositions pour synchroniser le récepteur avec l'émetteur
H04L 7/033 - Commande de vitesse ou de phase au moyen des signaux de code reçus, les signaux ne contenant aucune information de synchronisation particulière en utilisant les transitions du signal reçu pour commander la phase de moyens générateurs du signal de synchronisation, p.ex. en utilisant une boucle verrouillée en phase
17.
SIGNAL DELAY CONTROL USING A RECIRCULATING DELAY LOOP AND A PHASE INTERPOLATOR
A delay circuit provides a programmable delay and includes an input selector circuit to select between a loop delay output signal and an input signal. A loop delay circuit provides a loop delay to the input signal and supplies the loop delay output signal. The input signal can be recirculated through the loop delay circuit to extend the range of the delay. The input selector circuit selects the feedback signal during recirculation. A variable delay circuit provides a variable delay to the loop delay output signal after the recirculation is complete and supplies a variable delay output signal. An output selector circuit selects the output of the output selector circuit during the recirculation and selects the variable delay output signal after the recirculation is complete to thereby provide a delayed signal with the delay based on the loop delay, the number of loops of recirculation, and the variable delay.
H04L 7/033 - Commande de vitesse ou de phase au moyen des signaux de code reçus, les signaux ne contenant aucune information de synchronisation particulière en utilisant les transitions du signal reçu pour commander la phase de moyens générateurs du signal de synchronisation, p.ex. en utilisant une boucle verrouillée en phase
H04L 7/00 - Dispositions pour synchroniser le récepteur avec l'émetteur
18.
FREQUENCY MODULATION TRACKING FOR BAND REJECTION TO REDUCE DYNAMIC RANGE
A method for reducing a dynamic range of a received radio frequency signal includes receiving digital IQ signals corresponding to an in-phase component of the received radio frequency signal and a quadrature component of the received radio frequency signal. The method includes demodulating the digital IQ signals to generate an instantaneous frequency signal. The method includes selecting a center frequency of a selectable filter according to whether an interfering signal is detected in a target frequency band of the received radio frequency signal. The center frequency is selected from a predetermined frequency and an estimated center frequency determined using the instantaneous frequency signal. The method includes filtering the digital IQ signals using the selectable filter configured using the center frequency to generate output digital IQ signals.
In at least one embodiment, a method includes generating a digital time code corresponding to an input clock signal using a time-to-digital converter responsive to a reference clock signal and a time-to-digital converter calibration signal. The method includes generating the time-to-digital converter calibration signal based on the digital time code. Generating the time-to-digital converter calibration signal includes generating a digital error signal based on the digital time code and an estimated digital time code, and adapting the time-to-digital converter calibration signal based on the digital error signal.
G04F 10/00 - Appareils pour mesurer des intervalles de temps inconnus par des moyens électriques
H03L 7/085 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie
A method for improving the accuracy of a final inspection (FI) test of an acoustic wave device includes gating the feedthrough/cross-coupling (e.g., electromagnetic (EM) path) signal of the FI test data response for the tested acoustic wave device and adding a feedthrough/cross-coupling signal (e.g., EM path signal) from an engineering (EVB) test data (e.g., for a similar or identical surface acoustic device). This results in FI test data with time domain recovery of EM path signal from an EVB test, which can be compared against EVB test data (e.g. for a similar or identical surface acoustic device) to determine if the tested acoustic wave device passes inspection.
G01R 23/163 - Analyse de spectre; Analyse de Fourier adaptées à la mesure dans des circuits comportant des constantes réparties
G01R 29/22 - Mesure de propriétés piézo-électriques
G01R 31/28 - Test de circuits électroniques, p.ex. à l'aide d'un traceur de signaux
H03H 3/007 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques
21.
POWER AMPLIFIER HAVING ANALOG PRE-DISTORTION BY ADAPTIVE DEGENERATIVE FEEDBACK
Power amplifier having analog pre-distortion by adaptive degenerative feedback. In some embodiments, a pre-distortion circuit for an amplifier can include a transistor having an input node for receiving an input signal, an output node for providing an output signal having a gain relative to the input signal, and a common node for coupling to a ground. The pre-distortion circuit can further include a degeneration circuit implemented between the common node and the ground, with the degeneration circuit being configured to introduce a feedback response that reduces the gain when the input signal has a power level at or below a selected level. The degeneration circuit can be further configured to be disabled or provide a reduced feedback response when the input signal has a power level that exceeds the selected level.
The disclosed front end architectures are configured to conglomerate duplexer transmission (TX) contours into a specific or targeted region. This enables the power amplifier (PA) to match a larger number of frequency bands without the help of additional matching networks. The disclosed architectures are advantageous because they reduce the number of components (e.g., surface mount technology components (SMTs)) required for radio-frequency (RF) modules, such as front end modules, power amplifier modules, and the like. The disclosed architectures are also advantageous because they improve performance of the modules across a wider range of frequency bands.
A carrier aggregation circuit can include a mid-band path having a filter assembly and a phase shifting circuit, to support one or more frequency bands. The circuit can further include first and second high-band paths each being configured to support a frequency band and having a filter and a phase shifting circuit. Selected high-band filter and the mid-band filter assembly can be configured to provide impedances having the same sign for imaginary parts, and the phase shifting circuit of the mid-band path can be configured to provide a desired reflection coefficient phase at one of the first and second high-band frequency bands. The circuit can further include a common node coupled to outputs of the mid-band, first high-band and second high-band paths, and a tuning circuit implemented to remove the imaginary part of the impedance of the mid-band filter assembly at the frequency band of the selected high-band filter.
H04L 5/12 - Canaux caractérisés par le type de signal les signaux étant représentés par différentes modulations de phase d'une seule porteuse
H04L 5/10 - Canaux caractérisés par le type de signal les signaux étant représentés par différentes fréquences avec filtres mécaniques ou démodulateurs
H04L 5/00 - Dispositions destinées à permettre l'usage multiple de la voie de transmission
24.
GAIN STAGE DEGENERATION INDUCTOR SWITCHING WITHOUT THE USE OF SWITCHES
Disclosed herein are signal amplifier architectures that provide a plurality of gain modes. Different gain modes can use different paths through the amplifier architecture. Switches that are used to select the path through the amplifier architecture can be configured to also provide targeted impedance in a degeneration block or matrix. The switches that select the gain path are provided in the amplifier architecture and are thus not needed or used in the degeneration block, thereby reducing the size of the package for the amplifier architecture, improving the noise figure (NF), improving impedance matching, and eliminating the need for control logic associated with the degeneration block or matrix.
Disclosed herein are signal amplifiers that include a plurality of switchable amplifier architectures so that particular gain modes can use dedicated amplifier architectures to provide desired characteristics for those gain modes, such as low noise figure or high linearity. The disclosed signal amplifier architectures provide tailored impedances using a degeneration block or matrix without using switches in the degeneration switching block. The disclosed signal amplifier architectures provide a plurality of gain modes where different gain modes use different paths through the amplifier architecture. Switches that are used to select the path through the amplifier architecture also provide targeted impedances in a degeneration block or matrix. The switches that select the gain path are provided in the amplifier architecture and are thus not needed or used in the degeneration block, thereby reducing the size of the package for the amplifier architecture.
Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H2 and H3 simultaneously.
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p.ex. multiplexeurs, distributeurs
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
A method for regulating a voltage reference signal includes providing a first output current during a first interval and a boosted output current during a second interval to generate a low-dropout voltage reference signal based on a first power supply voltage, a second power supply voltage, and a reference voltage level. The method includes, during the second interval, compensating for a voltage drop caused by providing the boosted output current. The first output current may be provided in a first mode of operation. The boosted output current and voltage drop compensation may be provided in a boosted mode of operation.
G05F 1/56 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final
G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ
28.
ENUMERATION OF PERIPHERAL DEVICES ON A SERIAL COMMUNICATION BUS
A controller enumerates a plurality of devices while operating in a daisy-chain mode of operation and then causes the devices to operate in a parallel mode of operation in which the devices are individually addressed.
A supply-glitch-tolerant voltage regulator includes a regulated voltage node and an output transistor having a source terminal, a gate terminal, and a drain terminal. The source terminal is coupled to the regulated voltage node. The voltage regulator includes a first current generator coupled between a first node and a first power supply node. The voltage regulator includes a second current generator coupled between the first node and a second power supply node. The voltage regulator includes a feedback circuit coupled to the first current generator and the second current generator and is configured to adjust a voltage on the first node based on a reference voltage and a voltage level on the regulated voltage node. The voltage regulator includes a diode coupled between the drain terminal and the first power supply node and a resistor coupled between the gate terminal and the first node.
G05F 1/59 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de réglage final pour une charge unique
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
30.
VALIDATION OF CURRENT LEVELS DELIVERED BY A GATE DRIVER
A method for validating operation of a driver integrated circuit includes providing a signal using an output node. The signal is provided using multiple set points in response to a change in state of an input signal. Each set point corresponds to a different phase of a multi-phase transition of the signal. The method includes providing a timer value at an end of a phase of the multi-phase transition and determining whether the signal is in a target signal range of the phase based on the timer value at the end of the phase, a predetermined value defining the target signal range of the phase, and a predetermined time limit for the phase. A current through the output node may be provided using the multiple set points, and a voltage on the output node may have the multi-phase transition.
G01R 31/319 - Matériel de test, c. à d. circuits de traitement de signaux de sortie
G01R 23/12 - Dispositions pour procéder à la mesure de fréquences, p.ex. taux de répétition d'impulsions; Dispositions pour procéder à la mesure de la période d'un courant ou d'une tension par conversion de la fréquence en déphasage
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
A method for driving a high-power drive device includes providing a signal having a first predetermined signal level to an output node during a first phase of a multi-phase transition process. The method includes generating a first indication of a first parameter associated with the signal provided to the output node. The method includes generating a second indication of a second parameter associated with the signal provided to the output node. In the first phase, the second parameter is a time elapsed from a start of the first phase. The method includes providing the signal having a second predetermined signal level to the output node during a second phase of the multi-phase transition process. The method includes transitioning from the first phase to the second phase based on the first indication and the second indication.
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 19/00 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
32.
UPDATING CONTROL PARAMETERS OF A GATE DRIVER DURING OPERATION
A gate driver includes a variable strength driver circuit that provides an output signal to drive a high power device. The gate driver receives an update request from a host controller during an operating mode in which switching operations occur and updates one or more operating parameters associated with driving the high power device. The operating parameters including turn-on parameters, turn-off parameters, and soft shutdown parameters. The variable strength driver circuit uses the turn-on parameters for turn-on phases for the output signal, uses the turn-off parameters for turn-off phases for the output signal, and uses the soft shutdown parameters for soft shutdown phases for the output signal. The update request adjusts current, voltage, and/or time for one or more phases of the turn-on, turn-off and/or soft shutdown parameters.
H02M 1/084 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques utilisant un circuit de commande commun à plusieurs phases d'un système polyphasé
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p.ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
33.
TRANSMITTER FOR DUAL COMMUNICATION OVER AN ISOLATION CHANNEL
An isolated gate driver includes a first input terminal to receive gate information and one or more input terminals to receive configuration information. A modulation circuit generates a modulated signal having four possible states, each of the four possible states corresponding to a different unique pair of values of the gate information and the configuration information. The modulation circuit represents two of the states using on-off keying (OOK) while the configuration information is at a first value and represents two of the states as a modification to the OOK modulation based on the configuration information being at a second value. The modulated signal is sent over an isolation communication channel coupling a transmitter and receiver of the isolated gate driver.
H04L 27/02 - Systèmes à courant porteur à modulation d'amplitude, p.ex. utilisant la manipulation par tout ou rien; Modulation à bande latérale unique ou à bande résiduelle
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
Amplifier having input power protection. In some embodiments, an amplifier circuit can include an input node and an output node, and an amplifier implemented between the input node and the output node. The amplifier circuit can further include a bias circuit configured to provide a bias signal to the amplifier. The amplifier circuit can further include a protection circuit configured to generate a detected voltage representative of a peak of a radio-frequency signal present at the input node. The protection circuit can be further configured to enable a protection mode when the detected voltage is greater than a first threshold value and to disable the protection mode when the detected voltage is less than a second threshold value that is less than the first threshold value.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
Examples of the disclosure include a controller having a mode of operation including one of an on mode and an off mode, the controller including a voltage rail node, a reference node, at least one powered component configured to generate a bandgap voltage signal based on a rail voltage at the voltage rail node, a switching device coupled in series between the reference node and the at least one powered component and configured to provide a conductive path through the at least one powered component from the voltage rail node to the reference node in response to the controller being in the on mode, and to interrupt the conductive path through the at least one powered component in response to the controller being in the off mode.
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 19/00 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion
36.
BRIDGE COMBINERS AND FILTERS FOR RADIO-FREQUENCY APPLICATIONS
A coupling circuit can be configured to couple a common node to a first group of filters through a first path and to couple the common node to a second group of one or more filters through a second path. The coupling circuit can be configured such that an impedance provided by each filter of the first group for a signal in each band of the second group results in the signal being sufficiently excluded from the first path, and such that an impedance provided by each filter of the second group for a signal in each band of the first group results in the signal being sufficiently excluded from the second path. The first path can present a first impedance to the coupling circuit, and the second path can present a second impedance to the coupling circuit, such that complex part of the first impedance is a conjugate of complex part of the second impedance.
H03H 7/46 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
3 33 and disposed over the quartz substrate, and an interdigital transducer electrode formed over the piezoelectric film. The surface acoustic wave device can further include a bonding layer implemented over the piezoelectric film, and a cap layer formed over the bonding layer to thereby substantially confine energy of a propagating wave below the cap layer.
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/72 - Réseaux utilisant des ondes acoustiques de surface
A power management integrated circuit (PMIC) can improve the ramp up speed of a boost converter with the inclusion of a controllable switch that may modify the connection of an output capacitor to reduce the ramp time as the output voltage is ramping to a desired boost setpoint. The switch may be controlled using jump start logic to switch a first plate or terminal of the output capacitor from a ground connection to a voltage supply connection. Once a threshold voltage is reached, the first plate of the capacitor may be switched from the supply voltage to ground. In certain cases, by switching the connection of the output capacitor between ground and a supply voltage based on one or more threshold voltages or a boost setpoint, the time to ramp from an initial voltage to a desired boost setpoint may be reduced.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
RF communication systems with interference cancellation for coexistence are provided herein. In certain embodiments, an RF communication system includes a transmitter that transmits a transmit signal through a first front end circuit, a receiver that processes a receive signal from a second front end circuit, and a feedback receiver that processes a feedback signal from the first front end circuit to generate a digital interference cancellation signal that compensates the receiver for interference arising from the transmitter.
H04B 1/525 - Dispositions hybrides, c. à d. dispositions pour la transition d’une transmission bilatérale sur une voie à une transmission unidirectionnelle sur chacune des deux voies ou vice versa avec des moyens de réduction de la fuite du signal de l’émetteur vers le récepteur
H04B 1/12 - Montages de neutralisation, d'équilibrage ou de compensation
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
Antenna-plexers for interference cancellation are provided herein. In certain embodiments, a wireless device includes an antenna, an antenna-plexer coupled to the antenna and configured to generate a feedback signal, a transmitter configured to transmit a transmit signal to the antenna by way of the antenna-plexer, a receiver configured to process a receive signal, and a feedback receiver configured to process the feedback signal from the antenna-plexer to provide compensation to the receive signal.
H04B 1/525 - Dispositions hybrides, c. à d. dispositions pour la transition d’une transmission bilatérale sur une voie à une transmission unidirectionnelle sur chacune des deux voies ou vice versa avec des moyens de réduction de la fuite du signal de l’émetteur vers le récepteur
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/12 - Montages de neutralisation, d'équilibrage ou de compensation
41.
MULTI-LEVEL ENVELOPE TRACKING WITH ANALOG INTERFACE
Multi-level envelope trackers with an analog interface are provided herein. In certain embodiments, an envelope tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system includes a multi-level supply (MLS) DC-to-DC converter that outputs multiple regulated voltages, an MLS modulator that controls selection of the regulated voltages over time based on an analog envelope signal corresponding to an envelope of the RF signal amplified by the power amplifier, and a modulator output filter coupled between an output of the MLS modulator and the power amplifier supply voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
42.
POWER AMPLIFIER BIAS MODULATION FOR LOW BANDWIDTH ENVELOPE TRACKING
Apparatus and methods for power amplifier bias modulation for low bandwidth envelope tracking are provided herein. In certain embodiments, an envelope tracking system includes a power amplifier that amplifies an RF signal and a low bandwidth envelope tracker that generates a power amplifier supply voltage for the power amplifier based on an envelope of the RF signal. The envelope tracking system further includes a bias modulation circuit that modulates a bias signal of the power amplifier based on a voltage level of the power amplifier supply voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
43.
MULTI-LEVEL ENVELOPE TRACKING SYSTEMS WITH ADJUSTED VOLTAGE STEPS
Multi-level envelope tracking systems with adjusted voltage steps are provided. In certain embodiments, an envelope tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system includes a multi- level supply (MLS) DC-to-DC converter that outputs multiple regulated voltages, an MLS modulator that controls selection of the regulated voltages over time based on an envelope signal corresponding to an envelope of a radio frequency (RF) signal amplified by the power amplifier, and a modulator output filter coupled between an output of the MLS modulator and the power amplifier supply voltage. The envelope tracking system further includes a switching point adaptation circuit configured to control the voltage level of the regulated voltages outputted by the MLS DC-to-DC converter based on a power level of the RF signal.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
44.
MULTI-LEVEL ENVELOPE TRACKING SYSTEMS WITH SEPARATE DC AND AC PATHS
Multi-level envelope tracking systems with separate DC and AC paths are provided. In certain embodiments, an envelope tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system includes a multi-level supply (MLS) DC-to-DC converter that outputs multiple regulated voltages, an MLS modulator that controls selection of the regulated voltages over time based on an envelope signal corresponding to an envelope of a radio frequency (RF) signal amplified by the power amplifier, an AC path filter coupled between an output of the MLS modulator and the power amplifier supply voltage, and a DC path filter coupled between a DC voltage and the power amplifier supply voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
45.
SURFACE ACOUSTIC WAVE DEVICE HAVING MASS-LOADED ELECTRODE
333 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density p in a range 1.50 g/cm3< p ≤ 6.00 g/cm3, 6.00 g/cm3< p ≤ 12.0 g/cm3, or 12.0 g/cm3< p ≤ 23.0 g/cm3, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively.
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
46.
APPARATUS AND METHODS FOR BIASING OF POWER AMPLIFIERS
Apparatus and methods for biasing power amplifiers are provided herein. In certain embodiments, a power amplifier includes a bipolar transistor having a base biased by a bias network having a reactance that controls an impedance at the transistor base to achieve substantially flat phase response over large dynamic power levels. For example, the bias network can have a frequency response, such as a high-pass or band-pass response, that reduces the impact of power level on phase distortion (AM/PM).
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
Phase shifters for communication systems are provided herein. In certain embodiments, a phase shifter includes a plurality of phase shifting sections and a plurality of selection switches each coupled to a corresponding one of the phase shifting sections. The selection switches are formed on a semiconductor die, and are operable to connect one or more selected phase shifting sections between an input terminal and an output terminal, thereby controlling an overall phase shift provided by the phase shifter.
H01Q 3/36 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques avec des déphaseurs variables
Apparatus and methods for phase shifting are provided herein. In certain embodiments, a phase shifter includes a group of positive phase shifting circuits, a group of negative phase shifting circuits, and a group of selection switches for controlling selection of the positive phase shifting circuits and the negative phase shifting circuits. The selection switches are formed on a semiconductor die, and are operable to connect one or more selected positive phase shifting circuits and/or one or more selected negative phase shifting circuits between an input terminal and an output terminal, thereby controlling an overall phase shift provided by the phase shifter.
H01Q 3/36 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques avec des déphaseurs variables
Systems and methods for integrating injection-locked oscillators into transceiver arrays are disclosed. In one aspect, there is provided an injection-locked oscillator (ILO) distribution system including a master clock generator configured to generate a master clock signal. The ILO distribution system also includes an ILO distribution circuit including an ILO and configured to receive the master clock signal. The ILO is configured to generate a reference clock signal based on the master clock signal. The ILO distribution circuit is further configured to generate an output signal indicative of an operating frequency of the ILO. The ILO distribution system further includes an injection-locked detector (ILD) configured to receive the master clock signal and the output signal. The ILD is further configured to determine whether the ILO is in a locked state or in an unlocked state based on the master clock signal and the output signal.
H03L 7/24 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence directement appliqué au générateur
H03B 5/12 - Eléments déterminant la fréquence comportant des inductances ou des capacités localisées l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs
H03B 27/00 - Générateurs fournissant plusieurs oscillations de même fréquence, mais de phases différentes, autres qu'en simple opposition de phase
50.
LOAD-LINE SWITCHING FOR PUSH-PULL POWER AMPLIFIERS
An amplifier system including a push-pull power amplifier having an input to receive a radio frequency (RF) input signal and an output, the push-pull power amplifier being configured to amplify the RF input signal and provide at the output an RF output signal that is an amplified version of the RF input signal, a switchable shunt capacitance switchably connected between a load-line connected to the output of the push-pull power amplifier and a reference potential, and a switch configured to selectively connect the switchable shunt capacitance to the reference potential and disconnect the switchable shunt capacitance from the reference potential to vary an impedance of load-line.
An electronic device includes an electromagnetic interference shield having a layer of conductive material covering at least a portion of the electronic device and having a skin depth of less than 2 pm for electromagnetic signals having frequencies in a kilohertz range.
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 23/485 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées formées de structures en couches comprenant des couches conductrices et isolantes, p.ex. contacts planaires
Packaged surface acoustic wave devices, and methods of making the same are provided. The packaged surface acoustic wave devices are relatively thin and can have a height of less than 220 micrometers. The packaged surface acoustic wave device includes a photosensitive resin over a conductive structure which may be formed by a plating process. The conductive structure may overlie a cavity-defining structure encapsulating a surface acoustic wave device, the cavity-defining structure including walls and a roof. The photosensitive resin can include a phenol resin. The photosensitive resin can be relatively thin. Edge portions of a piezoelectric substrate can be free from the photosensitive resin. Laser-marked packaged surface acoustic wave devices and methods of making the same are also provided. The opposite side of a piezoelectric substrate supporting a package surface acoustic wave device can be directly marked using a laser. By directly marking the piezoelectric substrate itself, the use of a separate marking film can be avoided, making the packaged surface acoustic wave device thinner.
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
Devices and methods related to nested filters. In some embodiments, a radio-frequency device can include a substrate, and first and second filter devices mounted on the substrate with respective support structures, such that at least a portion of the second filter device is positioned in a space defined by an underside of the first filter device and the support structures for the first filter device. Such a radio-frequency device can be, for example, a packaged module for use in an electronic device such as a wireless device.
H03H 11/04 - Réseaux sélectifs en fréquence à deux accès
H03H 11/34 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences différentes ou dans des bandes de fréquence différentes, à une charge ou à une source commune
54.
RADIO FREQUENCY COMMUNICATION SYSTEMS WITH COEXISTENCE MANAGEMENT
Radio frequency (RF) communication systems with coexistence management are provided herein. In certain embodiments, a mobile device includes a first antenna, a first front end system that receives an RF receive signal from the first antenna, a first transceiver coupled to the first front end system, a second antenna, a second front end system that provides an RF transmit signal to the second antenna, and a second transceiver coupled to the second front end system. The first front end system generates a first observation signal by observing the RF receive signal, and the second front end system generates a second observation signal by observing the RF transmit signal. The first transceiver also downconverts the RF receive signal to baseband, and uses the first observation signal and the second observation signal to compensate the baseband receive signal for RF signal leakage.
Radio frequency (RF) communication systems with coexistence management are provided herein. In certain embodiments, a mobile device includes a first antenna, a first front end system that receives an RF receive signal from the first antenna, a first transceiver coupled to the first front end system, a second antenna, a second front end system that provides an RF transmit signal to the second antenna, and a second transceiver coupled to the second front end system. The second front end system observes the RF transmit signal to generate an RF observation signal, which is downconverted and processed by the second transceiver to generate digital observation data that is provided to the first transceiver. The first transceiver downconverts the RF receive signal to baseband, and compensates the baseband receive signal for an amount of RF signal leakage indicated by the digital observation data.
H04B 1/62 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission pour produire une prédistorsion du signal à l'émission et une correction correspondante à la réception, p.ex. pour améliorer le rapport signal/bruit
56.
RADIO FREQUENCY COMMUNICATION SYSTEMS WITH COEXISTENCE MANAGEMENT BASED ON DIGITAL OBSERVATION DATA
Radio frequency (RF) communication systems with coexistence management are provided herein. In certain embodiments, a method of coexistence management in a mobile device includes providing an RF receive signal from a first front end system to a first transceiver, generating an RF transmit signal and an RF observation signal using a second front end system, the RF observation signal generated based on observing the RF transmit signal, generating digital observation data based on the RF observation signal using a second transceiver, downconverting the RF receive signal to generate a baseband receive signal using the first transceiver, and compensating the baseband receive signal for RF signal leakage based on the digital observation data using the first transceiver.
H04B 1/62 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission pour produire une prédistorsion du signal à l'émission et une correction correspondante à la réception, p.ex. pour améliorer le rapport signal/bruit
57.
DISCRETE TIME CANCELLATION FOR PROVIDING COEXSITENCE IN RADIO FREQUENCY COMMUNICATION SYSTEMS
Radio frequency (RF) communication systems with coexistence management are provided herein. In certain embodiments, a method of coexistence management in a mobile device includes processing an RF receive signal to generate a digital baseband receive signal using a receive channel of a first transceiver, processing a first RF observation signal to generate a first digital observation signal using a first observation channel of the first transceiver, generating spectral regrowth observation data based on processing process the first digital observation signal using a first spectral regrowth baseband sampling circuit of the first transceiver, and compensating the digital baseband receive signal for RF signal leakage based on the spectral regrowth observation data and on direct transmit leakage observation data using a discrete time cancellation circuit of the first transceiver.
Systems and methods are provided herein that include an amplifier arrangement and a balun arrangement that accommodate two or more frequency bands using various common components that are operated and/or coupled in differing ways based upon which frequency band is in operation.
A packaged radio frequency module includes a package substrate. A semiconductor die is attached to the package substrate and includes one or more radio frequency circuits fabricated therein. A molding compound encapsulates the semiconductor die. An electromagnetic shielding structure at least partially covers the molding compound, the electromagnetic shielding structure having an outer layer including cobalt. A phone board assembly can include the packaged radio frequency module attached to a printed circuit board. The packaged radio frequency module can be incorporated into a mobile device.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p.ex. de poudre
H01F 1/047 - Alliages caractérisés par leur composition
61.
MAGNETIC MATERIALS WITH HIGH CURIE TEMPERATURES AND DIELECTRIC CONSTANTS
Disclosed herein are ceramic materials, such as bismuth substituted garnets, which can have high curie temperatures and high dielectric constants. In certain implementations, indium can be incorporated into the ceramic to improve certain properties and to avoid calcium compensation. The ceramic materials disclosed herein can be particular advantageous for below resonance applications.
H01F 1/34 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriés; Emploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux substances non métalliques, p.ex. ferrites
C22C 1/10 - Alliages contenant des composants non métalliques
62.
LOW FIRING TEMPERATURE DIELECTRIC MATERIALS DESIGNED TO BE CO-FIRED WITH HIGH BISMUTH GARNET FERRITES FOR MINIATURIZED ISOLATORS AND CIRCULATORS
Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.
H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes
H01P 5/19 - Dispositifs à accès conjugués, c. à d. dispositifs présentant au moins un accès découplé d'un autre accès du type à jonction
H01B 3/10 - Isolateurs ou corps isolants caractérisés par le matériau isolant; Emploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances inorganiques oxydes métalliques
Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/60 - Amplificateurs dans lesquels les réseaux de couplage ont des constantes réparties, p.ex. comportant des résonateurs de guides d'ondes
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
64.
APPARATUS AND METHODS FOR MULTI-ANTENNA COMMUNICATIONS
Apparatus and methods for multi-antenna communications are provided. In certain embodiments, a communication system includes an antenna array including a plurality of antenna elements, and a plurality of RF circuit channels each coupled to a corresponding one of the antenna elements. The plurality of RF circuit channels generate two or more analog baseband signals in response to the antenna array receiving a radio wave. The communication system further includes a controllable amplification and combining circuit that generates two or more amplified analog baseband signals based on amplifying each of the two or more analog baseband signals with a separately controllable gain, and that combines the two or more amplified analog baseband signals to generate a combined analog baseband signal.
H04B 7/06 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
65.
BEAMFORMING COMMUNICATION SYSTEMS WITH POWER CONTROL BASED ON ANTENNA PATTERN CONFIGURATION
Apparatus and methods for beamforming communication systems with power control based on antenna pattern configuration are provided. In certain embodiments, a beamforming communication system includes an antenna array including a plurality of antenna elements. The beamforming communication system further includes a plurality of signal conditioning circuits operatively associated with the antenna elements, and an antenna array management circuit that generates a plurality of control signals that individually control the signal conditioning circuits. The antenna array management circuit achieves a desired level of power control based on generating the control signals to select an antenna pattern configuration associated with a desired power control level.
H04B 7/0456 - Sélection de matrices de pré-codage ou de livres de codes, p.ex. utilisant des matrices pour pondérer des antennes
H04B 7/06 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
66.
FILTER INCLUDING ACOUSTIC WAVE RESONATOR IN PARALLEL WITH CIRCUIT ELEMENT
Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
67.
MULTI-LAYER PIEZOELECTRIC SUBSTRATE WITH HEAT DISSIPATION
Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
68.
FRONT END SYSTEMS WITH SWITCHED TERMINATION FOR ENHANCED INTERMODULATION DISTORTION PERFORMANCE
Front end systems with switched termination for enhanced intermodulation distortion performance are provided herein. The switched termination can be used on transmit paths and/or receive paths of the front end system to suppress impedance variation when the signal paths are inactive. For example, with respect to switched termination for transmit paths, a front end system can include a frequency multiplexing circuit connected to a band switch by a first radio frequency (RF) signal path and by a second RF signal path. The band switch selectively provides the frequency multiplexing circuit with a first transmit signal over the first RF signal path and with a second transmit signal over the second RF signal path. The front end system further includes a switched termination circuit in shunt with the first RF signal path and operable to turn on to suppress impedance variation when the first RF signal path is inactive.
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p.ex. par l'énergie de l'émetteur
Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.
H01P 5/19 - Dispositifs à accès conjugués, c. à d. dispositifs présentant au moins un accès découplé d'un autre accès du type à jonction
H03H 7/46 - Réseaux pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes
Systems and methods for a tunable impedance are provided. A tunable impedance includes a transistor assembly having two terminals and a control input. The transistor assembly includes one or more transistors electrically connected between the two terminals to provide a first impedance between the two terminals, based upon a control signal. One or more replica transistors react to the control signal in a similar fashion as the transistor assembly, to provide a replica impedance based upon the control signal. A control circuit is configured to generate the control signal based upon a voltage across the replica transistor(s) and/or a current through the replica transistor(s).
Radio frequency (RF) systems with tunable filters are provided herein. In certain embodiments, an RF system includes a first RF processing circuit configured to process a first frequency band of a first communication standard and a second frequency band of a second communication standard. The first frequency band and the second frequency band are close in frequency and/or partially overlapping in frequency. The first RF processing circuit includes a tunable filter for changing the bandwidth of the first RF processing circuit to enhance the robustness of the first RF processing circuit to blocker or jammer signals of a third frequency band.
Aspects of this disclosure relate to Lamb wave elements and acoustic wave resonators. Certain embodiments relate to an acoustic wave filter and a loop circuit that includes and Lamb wave and is configured to generate an anti-phase signal to a target signal at a particular frequency. Some embodiments relate to an acoustic wave assembly that includes a bulk acoustic wave resonator and a Lamb wave element implemented on a common substrate. Various embodiments relate to acoustic wave filters that include a Lamb wave resonator and a second acoustic wave resonator that is a different type of acoustic wave resonator than the Lamb wave resonator.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 1/00 - RÉSEAUX D'IMPÉDANCES, p.ex. CIRCUITS RÉSONNANTS; RÉSONATEURS - Détails de réalisation des réseaux d'impédances dont le mode de fonctionnement électrique n'est pas spécifié ou est applicable à plus d'un type de réseau
H03H 9/00 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques
An antenna impedance tuner can include first and second nodes, a bypass path, first and second series capacitance paths, and an inductance path, with each path being implemented between the first and second nodes and including a switch configured to allow the path to couple or uncouple the first and second nodes. The tuner can further include first and second shunt paths, with each shunt path being implemented between the second node and ground and including a switch configured to allow the shunt path to couple or uncouple the second node and the ground. The tuner can further include a switchable grounding path implemented along the inductance path and configured to allow the inductance path to function as a series inductance path between the first and second nodes, or as a shunt inductance path between the ground and a node along the inductance path.
A semiconductor die includes at least one electronic component, an at least partially moisture permeable material disposed on or about the at least one electronic component, at least one opening defining at least one path for moisture to migrate from an environment external to the die into the at least partially moisture permeable material, and a moisture impermeable shield disposed between the at least one electronic component and the at least one opening.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
75.
ALTERNATIVE TEMPERATURE COMPENSATING MATERIALS TO AMORHPHOUS SILICA IN ACOUSTIC WAVE RESONATORS
Apparatus and methods for quadrature combined Doherty amplifiers are provided herein. In certain embodiments, a separator is used to separate a radio frequency (RF) input signal into a plurality of input signal components that are amplified by a pair of Doherty amplifiers operating in quadrature. Additionally, a combiner is used to combine a plurality of output signal components generated by the pair of Doherty amplifiers, thereby generating an RF output signal exhibiting quadrature balancing.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/68 - Combinaisons d'amplificateurs, p.ex. amplificateurs à plusieurs voies pour stéréophonie
Wideband power combiners and splitters are provided herein. In certain embodiments, a power combiner/splitter is implemented with a first coil connecting a first port and a second port, and a second coil connecting a third port and a fourth port. The first coil and the second coil are inductively coupled to one another. For example, the first coil and the second coil can be formed using adjacent conductive layers of a semiconductor chip, an integrated passive device, or a laminate. The power combiner/splitter further includes a fifth port tapping a center of the first coil and a sixth port tapping a center of the second coil. The fifth port and the sixth port serve to connect capacitors and/or other impedance to the center of the coils to thereby provide wideband operation.
H01P 5/18 - Dispositifs à accès conjugués, c. à d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p.ex. coupleurs directionnels
H01P 5/10 - Dispositifs de couplage du type guide d'ondes destinés au couplage de lignes ou de dispositifs de différentes sortes destinés au couplage de lignes ou de dispositifs équilibrés avec des lignes ou des dispositifs déséquilibrés
78.
DYNAMIC CONTROL OF SINGLE SWITCHED UPLINK VERSUS MULTI UPLINK
Apparatus and methods for dynamic control of single switched uplink versus multi uplink are provided. In certain embodiments, a mobile device includes a front end system including a first transmit chain and a second transmit chain. The mobile device further includes a transceiver that transmits a first type of RF signal and a second type of RF signal by way of the front end system. The transceiver is operable in a first mode in which transmissions of the first type of RF signal and the second type of RF signal are staggered, and a second mode in which transmissions of the first type of RF signal and the second type of RF signal at least partially overlap in time. The transceiver includes a transmit control circuit that operates the transceiver in the first mode or the second mode based on comparing a transmit parameter to a threshold.
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p.ex. par l'énergie de l'émetteur
79.
MODULATION PARTITIONING AND TRANSMISSION VIA MULTIPLE ANTENNAS FOR ENHANCED TRANSMIT POWER CAPABILITY
Apparatus and methods for modulation partition and transmission via multiple antennas for enhanced transmit power capability are provided herein. In certain embodiments, an RF communication system includes a transceiver that generates a first RF signal and a second RF signal corresponding to partitions of a modulated RF signal. For example, the first RF signal and the second RF signal can be associated with different RB allocations of one or more channels of a frequency band. The RF communication system further includes a first transmit chain that processes the first RF signal to generate a first RF output signal for transmission on a first antenna, and a second transmit chain that processes the second RF signal to generate a second RF output signal for transmission on a second antenna.
H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p.ex. par l'énergie de l'émetteur
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
Stack assembly having electro-acoustic device. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
G01S 19/01 - Systèmes de positionnement par satellite à radiophares émettant des messages horodatés, p.ex. GPS [Système de positionnement global], GLONASS [Système global de navigation par satellite] ou GALILEO
81.
SUBSTITUTED ALUMINUM NITRIDE FOR IMPROVED ACOUSTIC WAVE FILTERS
A piezoelectric material comprises A1N doped with cations of one or more elements selected from the group consisting of: one of Sb, Ta, Nb, or Ge; Cr in combination with one or more of B, Sc, Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb; one of Nb and Ta in combination with one of Li, Mg, Ca, Ni, Co, and Zn; Ca in combination with one of Si, Ge, Ti, Zr, and Hf; Mg in combination with one of Si, Ge, and Ti; and one or more of Co, Sb, Ta, Nb, Si, or Ge in combination with one or more of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb. The cations at least partially substitute for Al in the crystal structure of the piezoelectric material.
H01L 41/09 - Eléments piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
82.
APPARATUS AND METHODS FOR BIAS SWITCHING OF POWER AMPLIFIERS
Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, a power management circuit that controls a voltage level of a supply voltage of the power amplifier, and a bias control circuit that biases the power amplifier. The power management circuit is operable in multiple supply control modes, such as an average power tracking (APT) mode and an envelope tracking (ET) mode. The bias control circuit is configured to switch a bias of the power amplifier based on the supply control mode of the power management circuit.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
83.
CONTROL OF UNDER-FILL FOR A DUAL-SIDED BALL GRID ARRAY PACKAGE
Technologies are described for fabrication of dual-sided packaged electronic modules that control the distribution of an under-fill material between components and a packaging substrate. The disclosed technologies include applying a film to targeted areas on the packaging substrate prior to under-filling one or more components and prior to attaching solder balls; under-filling one or more components and deflashing a portion of the under-fill to remove under-fill material prior to attaching solder balls; using a dam on a packaging substrate that is configured to prevent or limit the flow of a capillary under-fill material; forming a trench in a packaging substrate that is configured to prevent or limit the flow of a capillary under-fill material; and using an encapsulant on solder balls to control the distribution of an under-fill material.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/485 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées formées de structures en couches comprenant des couches conductrices et isolantes, p.ex. contacts planaires
Apparatus and methods related to beamforming of harmonics are provided herein. In certain implementations, a communication device for operating in a wireless network is provided. The communication device includes an antenna array including a plurality of antenna elements that generate a plurality of receive signals in response to a radio wave, a plurality of signal conditioning circuits operatively associated with the plurality of antenna elements and that condition the plurality of receive signals to provide beamforming of a receive beam, and a beam control circuit that controls the plurality of signal conditioning circuits to provide beam steering of the receive beam based on a direction of one or more harmonic lobes of the receive beam.
H04B 7/0408 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées utilisant plusieurs faisceaux, c. à d. diversité de faisceaux
H04B 7/0404 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées la station mobile comprenant plusieurs antennes, p.ex. pour mettre en œuvre une diversité en voie ascendante
H04B 7/08 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station de réception
85.
FREQUENCY AND POLARIZATION RECONFIGURABLE ANTENNA SYSTEMS
Apparatus and methods for reconfigurable antenna systems are provided herein. In certain configurations, an antenna system includes an antenna element, a tuning conductor adjacent to and spaced apart from the antenna element, and a switch electrically connected between the tuning conductor and a reference voltage, such as ground. The tuning conductor is operable to load the antenna element, and the switch selectively connects the tuning conductor to the reference voltage to provide tuning to the antenna element.
Disclosed are embodiments of microstrip and substrate integrated waveguide circulators/isolators which can be integrated with a substrate. This composite structure can serve as a platform for other components, allowing for improved miniaturization of components. Embodiments of the disclosure can be particular advantageous in the high frequency ranges, such as above 1.8GHz or above 3GHz, which allows devices to be used in the 5G space.
Aspects of this disclosure relate to a multiplexer, such as a duplexer, a quadplexer, a hexaplexer, or the like. The multiplexer includes acoustic wave filters coupled to a common node. A first acoustic wave filter of the acoustic wave filters includes acoustic wave resonators of a first type and a series acoustic wave resonator of a second type coupled between the acoustic wave resonators of the first type and the common node. In some embodiments, the acoustic wave resonators of the first type are surface acoustic wave resonators and the series acoustic wave resonator of the second type is a bulk acoustic wave resonator.
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
Aspects of this disclosure relate to an elastic wave device. The elastic wave device includes a sub-wavelength thick piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity layer with a higher bulk velocity than the velocity of an elastic wave. The high velocity layer can inhibit an elastic wave from leaking from the piezoelectric layer at anti-resonance.
A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.
H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
90.
MAIN-AUXILIARY FIELD-EFFECT TRANSISTOR CONFIGURATIONS FOR RADIO FREQUENCY APPLICATIONS
Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include at least two FETs, an auxiliary FET providing an auxiliary path and a main FET providing a main path. Distortions that are generated in the main path, such as third-order harmonics and/or intermodulation distortions, can be reduced by distortions generated in the auxiliary path. This can be accomplished by applying a tailored gate bias to the auxiliary path so that the auxiliary path generates signals with distortions of a similar magnitude but opposite in phase relative to the distortions of the signals in the main path. Accordingly, the overall performance in the active FET is improved by reducing these distortions or nonlinearities.
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p.ex. multiplexeurs, distributeurs
Through-mold features for shielding applications. In some embodiments, a packaged module can include a packaging substrate having a ground plane, and one or more contact pads implemented on an upper side and electrically connected to the ground plane. The module can further include a radio-frequency circuit assembly implemented on the upper side of the packaging substrate, and an overmold implemented on the upper side of the packaging substrate to cover the one or more contact pads and the radio-frequency circuit assembly. The module can further include a conductive layer configured to cover an upper surface of the overmold and one or more through-mold features, with each being configured to provide an electrical connection between the conductive layer and the ground plane through the corresponding contact pad, to thereby provide shielding between a first location within the module and a second location relative to the module.
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
H01L 23/60 - Protection contre les charges ou les décharges électrostatiques, p.ex. écrans Faraday
H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
Fuse state sensing circuits, devices and methods. In some embodiments, a fuse state sensing circuit can include an enable block configured to enable a flow of a fuse current resulting from a supply voltage to a fuse element upon receipt of an enable signal substantially at the same time as when the supply voltage is applied. The fuse state sensing circuit can further include a current control block tailored to control an amount of the fuse current. The fuse state sensing circuit can further include a decision block implemented to generate an output representative of a state of the fuse element based on the fuse current, with the output being generated during a ramp-up portion of the application of the supply voltage.
G11C 17/16 - Mémoires mortes programmables une seule fois; Mémoires semi-permanentes, p.ex. cartes d'information pouvant être replacées à la main dans lesquelles le contenu est déterminé en établissant, en rompant ou en modifiant sélectivement les liaisons de connexion par une modification définitive de l'état des éléments de couplage, p.ex. mémoires PROM utilisant des liaisons électriquement fusibles
G11C 17/18 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 7/06 - Amplificateurs de lecture; Circuits associés
93.
LOW-NOISE AMPLIFIER HAVING PROGRAMMABLE-PHASE GAIN STAGE
Low-noise amplifier having programmable-phase gain stage. In some embodiments, a radio-frequency amplifier can include an input node, an output node, and a programmable-phase gain stage implemented between the input node and the output node. The programmable-phase gain stage can be configured to operate in one of a plurality of gain settings, and to provide a desired phase for a signal at each of the plurality of gain settings.
H03F 1/26 - Modifications des amplificateurs pour réduire l'influence du bruit provoqué par les éléments amplificateurs
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
Described herein are systems, devices, and methods for a multi-standard radio switchable multiplexer that is configured to process wireless local area network (WLAN) signals and cellular signals in the same module. A front end module can be configured to support concurrent operation of WLAN signals and cellular signals using switching networks as described herein. In general, the described systems and methods can be configured to concurrently operate different radio systems (e.g., cellular, BLUETOOTH, WLAN, GPS, etc.) without the use of cascaded filters.
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p.ex. par l'énergie de l'émetteur
95.
MULTI-INPUT AMPLIFIER WITH PROGRAMMABLE EMBEDDED ATTENUATORS
Described herein are variable gain amplifiers and multiplexers that embed programmable attenuators into switchable paths that allow signals in a high gain mode to bypass attenuation. This advantageously reduces or eliminates performance penalties in the high gain mode. The programmable attenuators can be configured to improve linearity of the amplification process through pre-LNA attenuation in targeted gain modes. In addition, described herein are variable gain amplifiers with embedded attenuators in a switching network. The attenuators can be embedded onto switches and can be configured to have little or no effect on a noise factor in a high gain mode because the switching network can provide an attenuation bypass in a high gain mode and an attenuation in other gain modes. The programmable attenuators can be embedded onto a multi-input LNA architecture.
Attenuators having phase shift and gain compensation circuits. In some embodiments, a radio-frequency (RF) attenuator circuit can include one or more attenuation blocks arranged in series between an input node and an output node, with each attenuation block including a local bypass path. The RF attenuator circuit can further include a global bypass path implemented between the input node and the output node. The RF attenuator circuit can further include a phase compensation circuit configured to compensate for an off-capacitance effect associated with at least one of the global bypass path and the one or more local bypass paths.
Binary-weighted attenuator having compensation circuit. In some embodiments, a radio-frequency (RF) attenuator circuit can include a plurality of attenuation blocks arranged in series between an input node and an output node, with each of the plurality of attenuation blocks including a bypass path. The RF attenuator circuit can further include a phase compensation circuit implemented for each of at least some of the attenuation blocks having the respective bypass paths. The phase compensation circuit can be configured to compensate for an off-capacitance effect associated with the corresponding bypass path.
Described herein are variable gain amplifiers that selectively provide variable or tailored impedances at a degeneration block and/or feedback block depending at least in part on a gain mode of the variable gain amplifier. This advantageously reduces or eliminates performance penalties in one or more gain modes. The variable impedances can be configured to improve linearity of the amplification process in targeted gain modes. The variable gain amplifier can be configured to provide a low-loss bypass mode in a low gain mode to improve signal quality.
Disclosed herein are signal amplifiers that have an input impedance that varies over different bias currents. The signal amplifier includes a gain stage with a plurality of switchable amplification branches that are each capable of being activated such that one or more of the activated amplification branches provides a targeted adjustment to the input impedance. In addition, disclosed herein are signal amplifiers that have a variable-gain stage configured to provide a plurality of gain levels that result in different input impedance values presented to a respective signal by the variable-gain stage. The variable-gain stage can include a plurality of switchable amplification branches that provide a targeted adjustment to the respective input impedance values. The variable-gain stage can include a plurality of switchable inductive elements that are configured to be activated to provide a targeted adjustment to the respective input impedance values.
H03F 3/193 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
An attenuation cell is provided for use in a switched attenuator. The attenuation cell includes an attenuation path that has an input, a first switch, a resistive network, a second switch, and an output. The resistive network provides a desired attenuation from the input to the output. The attenuation cell also includes a bypass path in parallel with the attenuation path with a bypass switch between the input and the output. The attenuation cell also has a shunt switch coupled between the resistive network and a reference node to selectively connect the resistive network to the reference node.
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