An antenna in a lightbulb may include a conductive plane (e.g., a ground plane) that includes an edge-enabled void antenna (EEVA) with the EEVA including a corresponding edge-enabled void isolator (EEVI). Use of both the EEVA and the EEVI allows for a small antenna footprint for incorporation into a lightbulb. Optionally, two EEVAs, each with a corresponding EEVI may be used. Various arrangements are provided to illustrate possible compromises between structural integrity and cooling. Further, by using two EEVAs, diversity reception and transmission is possible, increasing the utility of the lightbulb by expanding directionality of the transmission/reception and/or improving communication through spatial diversity.
H01Q 1/44 - ANTENNES, c. à d. ANTENNES RADIO - Détails de dispositifs associés aux antennes utilisant un équipement ayant une autre fonction principale servant en outre d'antenne
H01Q 1/02 - Dispositifs de dégivrage; Dispositifs de séchage
H01Q 1/36 - Forme structurale pour éléments rayonnants, p.ex. cône, spirale, parapluie
A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H10N 30/87 - Dispositifs piézo-électriques ou électrostrictifs - Détails de structure Électrodes ou interconnexions, p.ex. connexions électriques ou bornes
3.
POWER AMPLIFIER WITH IMPROVED HARMONIC TERMINATION
Embodiments of an amplifier and method of operating an amplifier are disclosed. In some embodiments, the amplifier includes an active device having an input terminal and an output terminal. A harmonic termination is coupled in shunt with respect to the input terminal or the output terminal, wherein the harmonic termination includes a capacitor-shunt inductor-capacitor or similar network. In this manner, the harmonic terminator shapes the waveform of the RF signal without introducing large amounts of capacitance at the fundamental/center operating frequency.
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
An edge enabled void isolator (EEVI) for antennas is provided. In particular, two or more antennas are separated from one another by respective EEVI to provide isolation between the antennas. This isolation allows the antennas to be placed in close proximity, keeping the footprint of the antenna system relatively small for ease of use in small wireless devices. While two monopole antennas are specifically contemplated, the disclosure may be extended to more than two antennas and these antennas may be monopole, dipole, F, or the like.
An apparatus including at least one deflecting element and at least one strain sensor is configured for determining relative velocity, fluid flow, or angle of attack between a fluid and a body having a fluid-contacting surface and an opposing non-fluid-contacting surface. The deflecting element is joined to the body and extends from the fluid-contacting surface into the fluid, while the strain sensor is coupled to the non-fluid-contacting surface and is configured to detect strain imparted on the body by deflection of the at least one deflecting element. An output signal of the at least one strain sensor permits calculation of at least one of relative velocity, fluid flow, or angle of attack between the fluid and the body. By measuring deflection of a surface of the body, the at least one strain sensor may be mounted on or along the non-fluid-contacting surface where the environment is controllable, such that the sensor is not subject to deleterious environmental effects.
G01P 5/04 - Mesure de la vitesse des fluides, p.ex. d'un courant atmosphérique; Mesure de la vitesse de corps, p.ex. navires, aéronefs, par rapport à des fluides en mesurant les forces exercées par le fluide sur des corps solides, p.ex. anémomètre en utilisant la déflexion par des plaques en chicane
G01F 1/20 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets mécaniques par détection des effets dynamiques de l’écoulement
G01F 15/02 - Compensation ou correction des variations de pression, de poids spécifique ou de température
6.
RECONFIGURABLE ACOUSTIC WAVE RESONATORS AND FILTERS
Reconfigurable bulk acoustic wave (BAW) devices include one or more ferroelectric materials as the transduction layer(s). A polarization state of at least one of the ferroelectric material(s) is adjusted by applying a bias voltage across electrodes of the BAW device. The application of the bias voltage can change one or more properties of the ferroelectric material, which in turn may change a response of the BAW device.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
Current-accelerated voltage transition in a wireless communication circuit is disclosed. The wireless communication circuit includes a power management integrated circuit (PMIC) configured to generate a voltage, such as an average power tracking (APT) voltage, for amplifying a radio frequency (RF) signal in multiple continuous voltage modulation intervals. In a non-limiting example, each of the voltage modulation intervals can be an orthogonal frequency division multiplexing (OFDM) symbol or a timeslot with multiple OFDM symbols. According to embodiments disclosed herein, the PMIC can generate an acceleration current with an appropriate polarity to accelerate a transition of the voltage quickly between consecutive voltage modulation intervals. By supporting the current-accelerated voltage transition, the wireless transmission circuit can enable fast voltage adaptation to thereby improve operating efficiency of a power amplifier circuit.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
8.
FILTER CIRCUITRY USING FERROELECTRIC TUNABLE ACOUSTIC RESONATOR
The present disclosure relates to filter circuitry, which includes a first node and a second node, a series resonator coupled between the first node and the second node, and a compensation circuit coupled in parallel with the series resonator and located between the first node and the second node. Herein, the compensation circuit includes a tunable acoustic resonator with at least one transduction structure. The at least one transduction structure includes at least one ferroelectric material, and polarization of the at least one ferroelectric material varies with an electric field across the at least one ferroelectric material. Upon adjusting a direct current voltage applied to the tunable acoustic resonator, the compensation circuit is capable of providing a variable negative equivalent capacitance to at least partially cancel out an equivalent capacitance presented by the series resonator between the first node and the second node.
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
Methods for polishing bulk silicon are disclosed. In one aspect, mechanical polishing is facilitated by cyclically alternating between a silicon reactive slurry and deionized water while a mechanical polishing head operates on a surface. In exemplary aspects, the polishing head is polishing a bulk silicon carrier wafer to expose a backside of a radio frequency (RF) complementary metal oxide semiconductor (CMOS) switch, although other semiconductors may also benefit from exemplary aspects of the present disclosure. While the silicon slurry is present, a reaction between the bulk silicon and the slurry takes place allowing the polishing head to remove the bulk silicon. The deionized water interrupts this reaction and helps prevent overpolishing which might otherwise damage the device.
H01L 21/306 - Traitement chimique ou électrique, p.ex. gravure électrolytique
B24B 7/22 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verre; Accessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler pour meuler de la matière inorganique, p.ex. de la pierre, des céramiques, de la porcelaine
Intra-symbol voltage change acceleration in a wireless transmission circuit is disclosed. The wireless transmission circuit includes a power amplifier circuit that amplifies a radio frequency (RF) signal based on an average power tracking (APT) voltage supplied by a power management integrated circuit (PMIC). The RF signal is modulated in multiple modulation symbols, such as orthogonal frequency division multiplex (OFDM) symbols. To prevent distortion (e.g., amplitude clipping) in the RF signal, the PMIC is configured to increase the APT voltage during each of the modulation symbols whenever the RF signal exceeds a predefined power threshold. Further, the PMIC is configured according to various acceleration embodiments to complete each APT volage change within a defined temporal limit (e.g., < 1 μs). By supporting intra-symbol voltage change acceleration, the wireless transmission circuit can enable fast APT voltage adaptation to thereby improve operating efficiency of the power amplifier circuit.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
An acoustic transformer in a transmitter chain is disclosed. In one aspect, a differential power amplifier may produce a differential signal that is provided to a first transformer. A differential output of this first transformer is provided to an acoustic transformer that provides a single ended output signal for use by an acoustic filter. By making the second transformer an acoustic transformer, the second transformer may be integrated into the same circuitry that forms the acoustic filter, thereby simplifying the die. Further, the acoustic transformer may be tuned if ferroelectric resonators are used, which provides strong out-of-band signal cancelation.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A ferroelectric acoustic resonator structure is provided. The tunable ferroelectric acoustic resonator structure includes a pair of ferroelectric acoustic resonator networks coupled in parallel between a signal input and a signal output. The ferroelectric acoustic resonator networks are tuned by a pair of pulse voltages to resonate in a desired series resonance frequency. However, the pair of pulse voltages can change an equivalent capacitance to therefore cause a parallel resonance frequency of the tunable ferroelectric acoustic resonator structure to shift. Herein, the pair of pulse voltages are determined to cause one of the ferroelectric acoustic resonator networks to increase the equivalent capacitance and to cause another one of the ferroelectric acoustic resonator networks to decrease the equivalent capacitance by an equal amount. As a result, it is possible to keep the overall equivalent capacitance, and therefore the parallel resonance frequency, of the tunable ferroelectric acoustic resonator structure unchanged.
H03H 9/24 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs en matériau qui n'est ni piézo-électrique, ni électrostrictif, ni magnétostrictif
This disclosure describes methods and devices that assist in forming biosensors. Specifically, features that align solutions containing molecules to be immobilized on biosensors. A retaining structure may be disposed at least partially around a target surface of a substrate. A resonating structure may be disposed on the target surface. A droplet of functionalized material may be disposed on the resonating structure and the target surface, which may be auto-aligned and retained by the retaining structure on the target surface to consistently cover the resonating structure.
G01N 29/22 - Recherche ou analyse des matériaux par l'emploi d'ondes ultrasonores, sonores ou infrasonores; Visualisation de l'intérieur d'objets par transmission d'ondes ultrasonores ou sonores à travers l'objet - Détails
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
14.
BAW RESONATOR WITH ZERO-COUPLING IN BORDER REGIONS
The present disclosure relates to a bulk acoustic wave (BAW) resonator, which includes a bottom electrode, a top electrode, and a piezoelectric layer sandwiched between the bottom electrode and the top electrode. Herein, an active region of the BAW resonator is divided into a central region, a recessed border (BO) region laterally contiguous to and surrounding the central region, and a mass loading BO region laterally contiguous to and surrounding the recessed BO region. A height of the recessed BO region is less than a height of the central region and less than a height of the mass loading BO region. A first portion of the piezoelectric layer, which is confined in the mass loading BO region, has a zero electromechanical coupling tensor, while a central portion of the piezoelectric layer, which is confined in the central region, has a non-zero electromechanical coupling tensor.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
15.
SYSTEMS AND METHODS FOR PROVIDING DYNAMIC DATA RATES THROUGH DYNAMIC HEADER ENCODING
Systems and methods for providing dynamic data rates through dynamic header encoding are disclosed. In one aspect, a header for a data packet may be split into multiple parts, with a first part having a data rate encoded therein being sent at a first, slow data rate, with a remainder of the header being sent at a higher date indicated by the encoded data from the first part. By providing the data rate early in the packet header and then switching to a higher rate for the remainder of the header, the length of time required to transmit the header may be reduced. Since less time is required to the send the header, the data transmission is shorter, allowing the device to enter an inactive state so as to allow entry into a low-power mode.
Memory distortion neutralization in a power amplifier circuit (58) is provided. The power amplifier circuit (58) includes one or more amplifier stages (40, 42) each configured to amplify a radio frequency (RF) signal based on a time-variant modulated voltage received at a respective collector node. Notably, each of the amplifier stages (40, 42) can inherently cause a derivative of the time-variant modulated voltage (a.k.a. a modulated current) to be leaked from the respective collector node into a respective input node, which can create unwanted remodulation terms that can degrade an adjacent channel leakage ratio (ACLR) of the power amplifier circuit (58). Herein, a neutralization circuit (54, 60) is configured to inject a neutralization current to the respective input node to cancel at least a portion of the leaked modulated current.
H03F 1/14 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de moyens de neutrodynage
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
17.
VOLTAGE SWITCHING IN A POWER MANAGEMENT INTEGRATED CIRCUIT
Voltage switching in a power management integrated circuit (PMIC) is provided. The PMIC is required to increase or decrease a modulated voltage from a present voltage level in a present one of multiple time intervals to a future voltage level in an upcoming one of the time intervals with a very short switching interval. Herein, the PMIC determines whether to change the modulated voltage based on a first voltage transition scheme or a second voltage transition scheme, and toggle between the first voltage transition scheme and the second voltage transition scheme dynamically from one time interval to another. By employing the first voltage transition scheme or the second voltage transition scheme, the PMIC can switch the modulated voltage in a timely manner. Further, by opportunistically employing the first voltage transition scheme whenever possible, the PMIC can also help reduce potential power loss associated with switching the modulated voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
18.
ACOUSTIC WAVE DEVICE FOR ASYMMETRIC FREQUENCY BANDS AND MANUFACTURING METHOD, CHARGE WHEN COMPRESSED, TWISTED, OR DISTORTED, AND SIMILARLY COMPRESS, TWIST, OR DISTORT WHEN A CHARGE IS APPLIED
The present disclosure relates to an acoustic wave device for asymmetric frequency bands and a manufacturing process for making the same. The disclosed acoustic wave device includes at least one first electrode (102:152), at least one second electrode (104:152), a first piezoelectric layer (114) with a recess (116), and a second piezoelectric layer (118) fully covering the recess. Herein, the at least one first electrode is formed over the first piezoelectric layer, and the at least one second electrode is formed over the second piezoelectric layer and confined within the recess. The second piezoelectric layer does not cover a portion of the first piezoelectric layer, which is vertically underneath the at least one first electrode. The first piezoelectric layer and the second piezoelectric layer are formed of different piezoelectric materials.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
The present disclosure relates to a bulk acoustic wave (BAW) resonator that includes a bottom electrode, a piezoelectric layer over the bottom electrode, and a top electrode structure with a top electrode and the dual-step BO ring structure. Herein, the dual-step BO structure is formed over the piezoelectric layer and about a periphery of the top electrode structure, such that a central portion of the piezoelectric layer is not covered by the dual-step BO structure. The dual-step BO structure is formed of an oxide material and includes an inner BO ring with a first height and an outer BO ring with a second height that is larger than the first height, such that the dual-step BO structure decreases in height toward the central portion of the piezoelectric layer. The top electrode is formed over the central portion of the piezoelectric layer and extends over the dual-step BO structure.
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
The present disclosure relates to a bulk acoustic wave (BAW) resonator that includes a bottom electrode, a top electrode structure with a border ring (BO) structure, a piezoelectric layer sandwiched between the bottom electrode and the top electrode, and a reflector with a high acoustic impedance layer embedded in a low acoustic impedance region. Herein, the BO structure is formed about a periphery of the top electrode structure and defines a BO region of the BAW resonator. The high acoustic impedance layer is vertically underneath the bottom electrode and is separated from the bottom electrode by a first portion of the low acoustic impedance region. A width of the first high acoustic impedance layer is smaller than a width of the top electrode structure, such that the first high acoustic impedance layer does not extend completely through the BO region of the BAW resonator.
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
21.
FIELD EFFECT TRANSISTOR (FET) TRANSCONDUCTANCE DEVICE WITH VARYING GATE LENGTHS
A field effect transistor (FET) transconductance device with varying gate lengths is disclosed. In one aspect, the varying effective gate lengths are used in a differential architecture to obtain linear even and odd order operation simultaneously. In a particular aspect, the effective gate lengths may be varied according to a differential Multi-Tanh-like architecture. This variation of effective gate lengths enables a compact implementation particularly as compared to varying gate width or emitter areas while also providing linear even and odd order operation simultaneously.
A power management circuit is provided. Herein, a transceiver circuit is configured to generate a modulated differential signal that includes information related to a time-variant amplitude of a radio frequency (RF) signal. Accordingly, a power management integrated circuit (PMIC) can generate a modulated voltage, a modulated phase correction voltage, and a modulated amplitude correction voltage based on the modulated differential signal. The modulated voltage is provided to a power amplifier circuit for amplifying the RF signal, and the modulated phase correction voltage and the modulated amplitude correction voltage are provided to a power amplifier circuit to cause phase and amplitude adjustment in the RF signal. By performing phase and amplitude adjustment in the RF signal, it is possible to ensure proper aliment between the modulated voltage and the time-variant amplitude of the RF signal to thereby avoid potential distortion in the RF signal.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
A circuit package with improved thermal management is disclosed. In one aspect, a ceramic insert is provided within a package having heat-producing circuitry thereon. The ceramic insert replaces traditional laminate inserts and provides a better thermal path to remove heat from leads and/or traces within the package. More particularly, the ceramic insert more readily transfers and/or dissipates heat that might otherwise accumulate at an output port where a solder junction may be made to couple the output port to external elements.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/367 - Refroidissement facilité par la forme du dispositif
24.
PASSIVE ACOUSTIC SENSOR CIRCUIT AND RELATED WIRELESS SENSING SYSTEM
A passive acoustic sensor circuit and related wireless sensing system are provided. The passive acoustic sensor circuit is configured to induce an electrical current in response to receiving a radio frequency signal. The passive acoustic sensor circuit includes a sensor circuit, which can detect a sensory event (e.g., a touch or key press) and cause a variation in the electrical current in response to the sensory event. In contrast, the sensor circuit will not cause the variation in the electrical current in absence of the sensory event. In this regard, the presence or absence of the current variation, which can be detected remotely and wirelessly, will serve as an indication of the sensory event. By detecting the current variation remotely and wirelessly, it is possible to reduce physical wiring in an electronic device (e.g., smartphone, smartwatch, etc.) to help reduce design and manufacturing complexity of the electronic device.
G01H 11/06 - Mesure des vibrations mécaniques ou des ondes ultrasonores, sonores ou infrasonores par détection des changements dans les propriétés électriques ou magnétiques par des moyens électriques
25.
VEHICLE-MOUNTED RANGING SYSTEM AND METHOD OF OPERATING THE SAME
Disclosed is a vehicle-mounted ranging system and method. The vehicle-mounted ranging system has a communication transceiver configured to wirelessly communicate with at least one external communication transceiver and a plurality of ultra-wideband (UWB) transceivers configured to transmit and receive ranging pulses to and from at least one external UWB transceiver associated with the at least one external communication transceiver. A controller is interfaced between the communication transceiver and the plurality of UWB transceivers. The controller is configured to communicate with the associated at least one external communication transceiver to schedule transmission of ranging pulses between the plurality of UWB transceivers and the at least one external UWB transceiver and to calculate ranges between each of the plurality of UWB transceivers and the at least one external UWB transceiver based upon time-of-arrival of ranging pulses transmitted between the plurality of UWB ranging transceivers and the at least one external UWB transceiver.
H04W 4/02 - Services utilisant des informations de localisation
H04W 4/40 - Services spécialement adaptés à des environnements, à des situations ou à des fins spécifiques pour les véhicules, p.ex. communication véhicule-piétons
B60R 25/24 - Moyens pour enclencher ou arrêter le système antivol par des éléments d’identification électroniques comportant un code non mémorisé par l’utilisateur
26.
3D PACKAGING WITH SILICON DIE AS THERMAL SINK FOR HIGH-POWER LOW THERMAL CONDUCTIVITY DIES
The present disclosure relates to a three-dimensional (3D) package that has a die-on-die configuration, and includes a first die and at least one second die deposed underneath the first die. The first die includes a back-end-of-line (BEOL) portion, a device region over the BEOL portion, a substrate over the device region, and a substrate tie structure that extends through the device region and at least extends into the substrate. The substrate and the substrate tie structure each has a high thermal conductivity higher than 50 W/mK. The at least one second die is configured to be coupled to the BEOL portion of the first die, such that heat generated by the second die can propagate through the BEOL portion and the substrate tie structure, and radiate out of the first substrate.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
A reinforcement learning receiver front-end (RL-RXFE) is disclosed having a low-noise amplifier (LNA) with adjustable supply voltage and adjustable bias voltages, a frequency selective limiter (FSL) coupled to the LNA and configured to attenuate undesired radio frequency (RF) bands and for sensing RF band power, and a combination of an analog-to-digital converter configured to convert an RF signal amplified by the LNA to a digital signal, a digital signal processor configured to generate spectrum information from the digital signal, and a baseband distortion by-product detector/sensor configured to generate distortion by-product information, and LNA dynamic information. A reinforcement learning processing circuitry receives and uses this information to perform reinforcement learning and to output control signals to the FSL and the LNA to maximize linearity and efficiency.
The present disclosure provides a method of fabricating radio frequency (RF) circuits using three-dimensional (3D), hybrid wafer-level bonded wafers. In one aspect, a first, bottom silicon-on-insulator (SOI) wafer and a second, top SOI wafer are provided. Complementary metal-oxide semiconductor processing is then performed on both the first and second SOI wafers to fabricate transistors and form RF circuits on each wafer. The second wafer is then bonded to the first wafer to electrically couple the RF circuits together. In an aspect, the 3D fabrication method enables RF circuits that are designed using transistor structures stacked in a three-dimensional (3D) folded configuration using a plurality of wafers. In one aspect, the RF circuit uses mirrored portions that are folded together during the wafer bonding process. In another aspect, the RF circuit uses asymmetric portions between the top versus bottom wafers.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
29.
ECHO-CANCELLING ACOUSTIC DELAY CIRCUIT AND RELATED WIRELESS DEVICE OPERABLE TO DETECT A NEARBY OBJECT
An echo-cancelling acoustic delay circuit, which can be provided in a wireless device operable to detect a nearby object, is disclosed. Given the close proximity of the object, an echo of the emitted pulse(s) may be reflected instantaneously toward the antenna to potentially overlap with the emitted pulse(s), thus causing difficulty in detecting the reflected pulse(s). In this regard, the echo-cancelling acoustic delay circuit is provided in the wireless device to add a temporal delay in the emitted pulse(s) and the reflected pulse(s) to prevent the reflected pulse(s) from overlapping with the emitted pulse(s). In addition, the echo-cancelling acoustic delay circuit is further configured to cancel a reflection echo(s) in the emitted pulse(s) and the reflected pulse(s), thus allowing the wireless device to accurately receive the reflected pulse(s) to thereby detect the nearby object.
G01S 7/28 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails des systèmes à impulsions
H04B 1/7163 - Techniques d'étalement de spectre utilisant un signal radio impulsionnel
G01S 13/02 - Systèmes utilisant la réflexion d'ondes radio, p.ex. systèmes du type radar primaire; Systèmes analogues
G01S 7/292 - Récepteurs avec extraction de signaux d'échos recherchés
30.
SELECTIVE ETCHING PROCESS FOR SiGe AND DOPED EPITAXIAL SILICON
The present disclosure relates to a fabricating procedure of a radio frequency device, in which a precursor wafer including active layers, SiGe layers, and a silicon handle substrate is firstly provided. Each active layer is formed from doped epitaxial silicon and underneath a corresponding SiGe layer. The silicon handle substrate is over each SiGe layer. Next, the silicon handle substrate is removed completely, and the SiGe layer is removed completely. An etch passivation film is then formed over each active layer. Herein, removing each SiGe layer and forming the etch passivation film over each active layer utilizes a same reactive chemistry combination, which reacts differently to the SiGe layer and the active layer. The reactive chemistry combination is capable of producing a variable performance, which is an etching performance of the SiGe layer or a forming performance of the etch passivation film over the active layer.
A power management integrated circuit (PMIC) is disclosed. The PMIC is configured to generate multiple voltages during a voltage generation period(s). In embodiments disclosed herein, the voltage generation period(s) is divided into multiple voltage generation intervals. A voltage generation circuit is configured to generate and maintain a respective one of the voltages during a respective one of the voltage generation intervals based on a reference voltage modulated for the respective one of the voltage generation intervals to thereby make the voltages concurrently available during the voltage generation period(s). Moreover, a voltage modulation circuit is configured to modulate the reference voltage in each of the voltage generation intervals based on a single direct-current to direct-current (DC-DC) power inductor. As a result, the PMIC can concurrently support multiple load circuits (e.g., power amplifiers) with significantly reduced footprint.
G06F 1/3296 - Gestion de l’alimentation, c. à d. passage en mode d’économie d’énergie amorcé par événements Économie d’énergie caractérisée par l'action entreprise par diminution de la tension d’alimentation ou de la tension de fonctionnement
32.
BROADBAND LNA STRUCTURE USING OFFSET ACTIVE COUPLED SEGMENTS
A broadband low noise amplifier (LNA) structure (10) includes a main LNA (12), an offset LNA (14), an input splitter (16), and an output combiner (18). The input splitter (16) is configured to split a radio frequency (RF) input signal into a first RF input signal and a second RF input signal with difference phases, which are fed to the main LNA (12) and the offset LNA (14), respectively. Based on the first RF input signal, the main LNA (12) is configured to provide a first RF output signal, and based on the second RF input signal, the offset LNA (14) is configured to provide a second RF output signal. The output combiner (18) is configured to realign the first RF output signal and the second RF output signal, and configured to combine the first and second RF output signals to provide a combined RF output signal.
H03F 1/42 - Modifications des amplificateurs pour augmenter la bande passante
H03F 1/08 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
Radio frequency (RF) blocker detection in an RF frontend circuit is provided. In embodiments disclosed herein, the RF frontend circuit includes multiple detector circuits configured to measure strength of a received RF signal at multiple measurement points of an RF receive path and report the measured strength at each of the measurement points to a blocker detection circuit. Based on the measured strength at various measurement points, the blocker detection circuit can determine a presence and location of an RF blocker(s) inside or outside a signal passband of the received RF signal. Accordingly, the blocker detection circuit can take a corrective action locally and/or report the detected RF blocker(s) to a transceiver circuit to trigger proper corrective actions in the transceiver circuit. As a result, it is possible to block or suppress the RF blocker(s) around the signal passband to help improve receiver sensitivity of the RF receive path.
This disclosure relates to a cooling apparatus and a method for cooling semiconductor devices, wherein the cooling apparatus is disposed over a top surface and a bottom surface of a printed circuit board. The disclosed cooling apparatus comprises a printed circuit board, a first semiconductor device comprising a first thermal pad and mounted on a top surface of the printed circuit, a second semiconductor device comprising a second thermal pad and mounted on a bottom surface of the printed circuit, a first heat sink, a first thermal interface structure thermally coupled between the first thermal pad and the first heat sink, a second heat sink, and a second thermal interface structure thermally coupled between the second thermal pad and the second heat sink.
H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
35.
MICROELECTRONICS PACKAGE WITH VERTICALLY STACKED WAFER SLICES AND PROCESS FOR MAKING THE SAME
The present disclosure relates to a microelectronics package with a vertically stacked structure of two or more wafer slices. A first wafer slice includes a first device region and a through-via connected to the first device region through a first connecting layer. A second wafer slice, which is vertically stacked underneath the first wafer slice, includes a second device region and a top via connected to the second device region through a second connecting layer. The top via in the second wafer slice is in contact with the through-via in the first wafer slice, such that the first device region is electrically connected to the second first device region. Herein, silicon crystal, which has no germanium, nitrogen, or oxygen content, does not exist between the first device region and the second device region.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
36.
WIRELESS DEVICE OPERABLE TO DETECT A NEARBY OBJECT
A wireless device operable to detect a nearby object is disclosed. Herein, an object is considered a nearby object when a roundtrip propagation duration of a pulse(s) between an antenna and the object is less than two nanoseconds (2 ns). Given the close proximity of the object, an echo of the emitted pulse(s) may be reflected instantaneously toward the antenna to potentially overlap with the emitted pulse(s), thus causing difficulty in detecting the reflected pulse(s). In this regard, in embodiments disclosed herein, an acoustic delay circuit is provided in the wireless device to add a temporal delay in the emitted pulse(s) and the reflected pulse(s) to prevent the reflected pulse(s) from overlapping with the emitted pulse(s). As a result, the wireless device can accurately receive the reflected pulse(s) to thereby detect the nearby object.
G01S 7/28 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails des systèmes à impulsions
G01S 13/02 - Systèmes utilisant la réflexion d'ondes radio, p.ex. systèmes du type radar primaire; Systèmes analogues
G01S 13/04 - Systèmes déterminant la présence d'une cible
37.
POWER MANAGEMENT APPARATUS OPERABLE WITH MULTIPLE CONFIGURATIONS
A power management apparatus operable with multiple configurations is disclosed. In embodiments disclosed herein, the power management apparatus can be configured to concurrently generate multiple modulated voltages based on a configuration including a single power management integrated circuit (PMIC) or a configuration including a PMIC and a distributed PMIC. Regardless of the configuration, the power management apparatus employs a single switcher circuit, wherein multiple reference voltage circuits are configured to share a multi-level charge pump (MCP). As a result, it is possible to reduce footprint of the power management apparatus while improving isolation between the multiple modulated voltages.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
38.
MULTI-LEVEL 3D STACKED PACKAGE AND METHODS OF FORMING THE SAME
The present disclosure relates to a multi-level three-dimensional (3D) package with multiple package levels vertically stacked. Each package level includes a redistribution structure and a die section over the redistribution structure. Each die section includes a thinned die that includes substantially no silicon substrate and has a thickness between several micrometers and several tens of micrometers, a mold compound, and an intermediary mold compound. Herein, the thinned die and the mold compound are deposed over the redistribution structure, the mold compound surrounds the thinned die and extends vertically beyond a top surface of the thinned die to define an opening over the thinned die and within the mold compound, the intermediary mold compound resides over the thinned die and fills the opening within the inner mold compound, such that a top surface of the intermediary mold compound and a top surface of the mold compound are coplanar.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
The present disclosure relates to a radio frequency (RF) module with a protection structure for enhanced ruggedness and reliability. The disclosed RF module includes a power amplifier (PA), a bias circuit configured to provide a direct current (DC) supply to the PA, and a protection structure coupled between the PA and the bias circuit. Herein, the protection structure is configured to generate a detector voltage by sensing reverse power reflected from an antenna back to at least the PA. The protection structure is configured to control the bias circuit to reduce the DC supply to the PA based on a comparison result between the detector voltage and a threshold voltage.
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/189 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence
H03F 3/193 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
H03F 1/52 - Circuits pour la protection de ces amplificateurs
Systems and methods for temperature coefficient of offset compensation for a resistance bridge are disclosed. In one aspect, one or more current sources are added in parallel to resistance elements within a resistance bridge. The current source(s) may be selectively switched on and adjusted by a control circuit based on readings from a temperature sensor. In this fashion, the temperature induced variations in the resistance may be canceled or corrected allowing for better performance of the resistance bridge.
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01L 9/06 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pression; Transmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent en faisant usage des variations de la résistance ohmique, p.ex. de potentiomètre de dispositifs piézo-résistants
G01L 9/04 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pression; Transmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent en faisant usage des variations de la résistance ohmique, p.ex. de potentiomètre de jauges de contrainte à résistance
41.
EQUALIZER CIRCUIT IN AN ENVELOPE TRACKING INTEGRATED CIRCUIT
An equalizer circuit in an envelope tracking (ET) integrated circuit (ETIC) is disclosed. The ETIC (26) is configured to generate an ET voltage based on a target voltage (VTGT) for amplifying a radio frequency (RF) signal(s). Since the ETIC has inherent impedance and group delay that can cause distortion in the ET voltage, an equalizer circuit (24) is provided in the ETIC to equalize the target voltage prior to generating the ET voltage. Specifically, the equalizer circuit generates an equalized target voltage to offset the inherent impedance and a modified target voltage to mitigate the group delay. Accordingly, the equalizer circuit can output a processed target voltage, which can include the equalized target voltage and/or the modified target voltage, for generating the ET voltage. As a result, it is possible to reduce distortion resulted from the inherent impedance and group delay, especially when the RF signal(s) is modulated in a wide modulation bandwidth.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/72 - Amplificateurs commandés, c. à d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
42.
SIGNAL PROCESSING APPARATUS AND RELATED TRANSCEIVER CIRCUIT
A signal processing apparatus and related transceiver circuit are disclosed. The signal processing apparatus includes a power amplifier circuit and a transceiver circuit. The transceiver circuit is configured to generate multiple composite signals each having a respective one of multiple inverted intermodulation product terms. The power amplifier circuit includes multiple power amplifiers each configured to amplify a respective one of the composite signals. By including the inverted intermodulation product terms in the composite signals prior to amplifying the composite signals, it is possible to offset intermodulation product terms inherently caused by nonlinear responses of the power amplifiers, thus helping to reduce spectrum degradation in the signal processing apparatus.
A power management circuit operable with multiple supply voltages is disclosed. In embodiments disclosed herein, the power management circuit includes a supply voltage circuit(s) capable of simultaneously generating multiple supply voltages at different voltage levels. The power management circuit also includes multiple envelope tracking (ET) voltage circuits each configured to generate a respective one of multiple ET voltages based on the multiple supply voltages. In this regard, each ET voltage circuit can dynamically use different supply voltages from time to time to generate the respective ET voltage. As a result, it is possible to prevent distortion (e.g., amplitude clipping) in any of the ET voltages, especially when large peak-to-average ratio (PAR) is expected in the ET voltages.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
44.
REDUCED INTERPATH INTERFERENCE FOR ULTRAWIDEBAND (UWB) WIRELESS COMMUNICATION
Systems and methods for reduced interpath interference for ultrawideband (UWB) wireless communication are disclosed. In one aspect, a wireless communication device employs a systematic and non-random pulse-hopping scheme to introduce variable distances between pulses to reduce collision rates from interpath interference. In exemplary aspects, the scheme optimizes avoidance of collision rates for distances between paths of up to thirty nanoseconds (30 ns). The use of an optimized grid will be stable regardless of position of the user, thereby avoiding transmission drops and improving the user experience.
An envelope tracking (ET) integrated circuit (ETIC) operable across wide modulation bandwidth is disclosed. The ETIC includes at least two auxiliary voltage outputs coupled to a high-bandwidth power amplifier circuit that has a lower equivalent capacitance, and thus a higher impedance resonance frequency. The ETIC also includes a pair of ET voltage circuits configured to generate a pair of ET voltages, respectively. To help mitigate potential distortion in the ET voltages, a control circuit is configured to couple the ET voltage circuits exclusively to the auxiliary voltage outputs when the ETIC needs to operate with a high modulation bandwidth (e.g., ≥200 MHz). Given the higher impedance resonance frequency of the high-bandwidth power amplifier circuit, it is possible to increase separation between an energy spectrum of a voltage disturbance and an energy spectrum of the high modulation bandwidth, thus helping to reduce the potential distortion in the ET voltages.
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/393 - Amplificateurs de courant continu, comportant un modulateur à l'entrée et un démodulateur à la sortie; Modulateurs ou démodulateurs spécialement conçus pour être utilisés dans de tels amplificateurs comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
H03F 3/50 - Amplificateurs dans lesquels le signal d'entrée est appliqué — ou le signal de sortie est recueilli — sur une impédance commune aux circuits d'entrée et de sortie de l'élément amplificateur, p.ex. amplificateurs dits "cathodynes"
A multi-passband frequency acoustic structure is provided. The multi-passband frequency acoustic structure includes an acoustic resonator structure configured to pass a signal to a signal output in a built-in series resonance frequency (a.k.a. built-in passband frequency). Notably, the built-in serial resonance frequency is typically fixed and determined by the mass and/or structure of the acoustic resonator structure. In embodiments disclosed herein, the multi-passband frequency acoustic structure further includes a tuning circuit, which can be tuned to bypass the acoustic resonator structure in a tunable serial resonance frequency (a.k.a. tunable passband frequency) to pass the signal directly to the signal output, or to forward the signal to the acoustic resonator structure outside the tunable serial resonance frequency (e.g., in the built-in serial resonance frequency). As such, the multi-passband frequency acoustic structure can operate with multiple serial resonance frequencies to thereby support multiple passband frequencies.
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
47.
TEMPERATURE COMPENSATED SURFACE ACOUSTIC WAVE DEVICE AND METHODS OF MANUFACTURING THE SAME
Embodiments described herein may provide a surface acoustic wave (SAW) device, methods of fabricating the SAW device, and a system incorporating the SAW device. The SAW device may include a piezoelectric substrate and individual resonators may be formed by a plurality of electrodes on the surface of the piezoelectric substrate. A dielectric layer having a positive thermal coefficient of frequency (TCF) may be formed on each of the plurality of electrodes. In various embodiments, temperature compensation may be achieved by providing more or less of the dielectric layer on at least one resonator than on the other resonators based on a configuration of the resonators. In various embodiments, temperature compensation may be achieved by providing at least one resonator with a different duty factor than the other resonators based on a configuration of the resonators.
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
G10K 11/18 - Procédés ou dispositifs pour transmettre, conduire ou diriger le son
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H10N 30/06 - Formation d’électrodes ou d’interconnexions, p.ex. de connections électriques ou de bornes
48.
DUAL DIRECTIONAL COUPLER WITH MULTIPLE COUPLINGS FOR SYMMETRICAL PERFORMANCE
A dual directional coupler with multiple couplings for symmetrical performance is provided. The dual directional couplers implemented in radio frequency (RF) front-end modules often deliver different RF performance in terms of coupling factor and directivity between the forward and reverse modes. The performance asymmetry between these modes generally has multiple origins, where the two most relevant can be ascribed to the die layout (asymmetric die layout) and module routing (e.g., the antenna and coupler out pads are next to each other and experience mutual coupling). Embodiments described herein aim to improve the performance symmetry of dual directional couplers by employing a novel asymmetric layout which symmetrizes performance by adding mutual couplings that compensate the undesired ones. A novel circuit topology is also presented, which enables the forward and reverse modes to be tuned independently, adding a further degree of freedom during the design phase.
H01P 5/18 - Dispositifs à accès conjugués, c. à d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p.ex. coupleurs directionnels
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
An antenna structure is disclosed that is well suited for use in dual- or multi-band wireless environments and sized so that it may be used in an antenna array for angle of arrival (AoA) detection. More specifically, an antenna may include a first antenna element, which may be an antenna element such as a patch antenna. The first antenna element is positioned in a first plane and positioned on first side of a substrate. On an opposite side of the substrate, a ground plane may be positioned in a second plane. The ground plane shapes the radiation pattern of the first antenna element to operate as a directional antenna. Sandwiched between the ground plane and the first antenna element is an intermediate antenna element constructed to act as a metamaterial that increases an effective distance between the ground plane and the first antenna element.
G01S 3/04 - Radiogoniomètres pour déterminer la direction d'où proviennent des ondes infrasonores, sonores, ultrasonores ou électromagnétiques ou des émissions de particules sans caractéristiques de direction utilisant des ondes radio - Détails
A progressive envelope tracking (ET) with delay compensation includes an ET integrated circuit (IC) (ETIC) that is a progressive ETIC that switches between different driver amplifiers having different associated offset voltages based on a tracking signal (e.g., Vramp) from a baseband transceiver. To make sure that desired changes to the offset voltage occur contemporaneously with an input signal for the driver amplifiers, a delay may be added to the input signal for the driver amplifiers. By adding and controlling this delay to the input to the driver amplifiers, the changes to the offset voltage will track the changes to the input signal at the driver amplifiers and overall efficiency of the ETIC may be improved.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
51.
ENVELOPE TRACKING RADIO FREQUENCY FRONT-END CIRCUIT
An envelope tracking (ET) radio frequency (RF) front-end circuit receives a single tracking signal (e.g., Vramp) from a baseband transceiver and generates a plurality of control signals (Vcc). The control signals are created by a multiple control signal generator circuit based on a calculated load estimate for each relevant power amplifier. The load estimate may be calculated from a sensed current and voltage. By providing control signals optimized for loads presented to the power amplifiers, the overall efficiency of the transmitter is improved.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/213 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
52.
SUPPLY VOLTAGE BASED ANALOG PREDISTORTION (APD) CIRCUIT FOR POWER AMPLIFIER
A supply voltage based analog predistortion (APD) circuit for a power amplifier is disclosed. In an exemplary aspect, the power amplifier is in a front end module (FEM) of a radio frequency (RF) transceiver. An APD circuit operates within an amplifier chain to normalize the distortion profile of the amplifier chain based on a supply voltage. A baseband processor (BBP) performs digital predistortion (DPD) on signals being sent from the BBP to the FEM. As a result of the APD circuit, the DPD may assume a normalized profile for the FEM, allowing for simplification of the DPD despite many possible distortions introduced by the amplifier chain based on the supply voltage.
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/193 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
53.
ANALOG PREDISTORTION (APD) SYSTEM FOR POWER AMPLIFIERS
An analog predistortion system for power amplifiers is disclosed. In one aspect, the system may apply analog predistortion to offset memory effects that may occur as a function of frequencies that operate faster than time constants of the related circuits. In a particular aspect, the analog predistortion is applied at least to a phase of the signal to be amplified, but may also be applied to a gain of the signal to be amplified. When such memory focused analog predistortion is combined with memoryless or low depth memory digital predistortion, overall linearity and performance of the power amplifier is improved.
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
Systems and methods for analog predistortion (APD) in power amplifiers are disclosed. In one aspect, APD may be provided in a front-end module (FEM) of a transmitter. More specifically, the APD may include different predistortions based on where within a frequency band the signal to be distorted is operating (i.e., sub-band APD). The APD in the FEM may further be based on operating conditions such as temperature within the FEM. Still further, the FEM may be configured to apply different APD based on whether or not a baseband processor (BBP) applies digital predistortion (DPD). At a minimum, the provision of the APD may make the operation of a power amplifier in FEM more linear. Further, where DPD is present, the use of the APD may simplify the requirements for the DPD provided in the BBP.
The present disclosure relates to an amplifier system having an output amplifier stage with a signal input and output, and a varactor with a capacitive output that is coupled to the signal input for adjusting input capacitance. The amplifier system also includes push varactor bias circuitry with a bias level output that is coupled to a tuning input, and a bias control input. The push varactor bias circuitry is configured to adjust bias voltage at the tuning input and thereby adjust the capacitance at the signal input by way of the varactor and reduce signal distortion at the signal output in response to a distortion compensation signal received at the bias control input.
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
56.
PA COARSE COMPLEX VSWR DETECTION (QUADRANT) FOR ANALOG-ASSISTED DPD AND PA LOAD MODULATION OPTIMIZATION
The present disclosure pertains to a power amplifier system that promotes enhanced signal linearity and overall system efficiency. The system includes a power amplifier with an amplification path for a radio frequency (RF) signal, and detector circuitry operationally linked to sample locations along this path. The detector circuitry captures and transmits signal characteristics of the RF signal. A voltage standing wave ratio (VSWR) quadrant data generator in communication with the detector circuitry generates VSWR quadrant data based on the detected signal characteristics. The baseband circuitry, comprised of a memory unit preconfigured with digital pre-distortion (DPD) coefficients and a DPD processor, controls the shaping of pre-distortion applied to the RF signal based on the VSWR data, thereby enhancing signal linearity. The components of the system interconnect and collaboratively function to optimize the performance and efficiency of the power amplifier system.
An analog predistortion (APD) circuit is disclosed. In one aspect, the power amplifier is in a front-end module (FEM) of a radio frequency transceiver. An APD circuit operates within an amplifier chain to normalize the distortion of the amplifier chain. A baseband processor (BBP) performs digital predistortion (DPD) on signals being sent from the BBP to the FEM. As a result of the APD, the DPD may assume a normalized profile for the FEM, allowing for simplification of the DPD despite many possible distortions introduced by the amplifier chain.
Systems and methods for providing a protection loop for a power amplifier (PA CELL) are disclosed. In one aspect, an over voltage condition is detected (214, 216) at an output of the power amplifier (PA CELL), and a short circuit is selectively created at a base or gate of a transistor within the power amplifier (PA CELL) to debias the transistor and prevent an over voltage condition from damaging the transistor. Provision of such a fast acting over voltage protection option more readily accommodates and protects the power amplifier (PA CELL) in situations with high peak-to-average ratio conditions. This protection may prevent the transistor from being damaged by rapid power fluctuations that may occur, particularly in current cellular standards.
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 3/72 - Amplificateurs commandés, c. à d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/19 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
An acoustic filter providing negative capacitance for use in multiplexers is provided that may include a first resonator and a second resonator. The second resonator may be a three terminal element that includes two sub-resonator elements having opposite polarities that are mechanically coupled such that as one sub-resonator expands, the other contracts. The second resonator may act as a negative capacitance element relative to the first resonator such that the second resonator provides cancelation at specific frequencies. This structure may further reduce the order of an N-multiplexer ladder network and reduce total insertion loss.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
The present disclosure relates to a resonator structure including stacked resonators, which share a same reflector. The disclosed resonator structure includes a first resonator and a second resonator, which is vertically stacked with the first resonator and shares a common reflector with the first resonator. Herein, the first resonator is at least composed of a first top electrode, a first piezoelectric layer underneath the first top electrode, and the common reflector underneath the first piezoelectric layer. The second resonator is at least composed of the common reflector, a second piezoelectric layer underneath the common reflector, and a second bottom electrode underneath the second piezoelectric layer. The first resonator and the second resonator are acoustically isolated from each other.
H03H 9/205 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant des résonateurs multiples
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
61.
PIEZOELECTRIC LAYER ARRANGEMENTS IN ACOUSTIC WAVE DEVICES AND RELATED METHODS
Acoustic wave devices, and particularly piezoelectric layer arrangements in acoustic wave devices and related methods are disclosed. Acoustic wave devices may include a piezoelectric layer on a carrier substrate. The piezoelectric layer is formed with a thickness that is varied or shaped across different portions of the carrier substrate. Different piezoelectric layer thicknesses on a common carrier substrate may be provided for different surface acoustic wave (SAW) filter structures that are formed monolithically, for different sets of resonators within a single filter structure, and for different regions within a single SAW device in one or more of the transverse direction or the propagation directions. Shaping piezoelectric layers may include selectively removing or adding portions of the piezoelectric layer. In this manner, piezoelectric layer thicknesses at different hierarchy levels within SAW devices and filters may be tailored to provide different acoustic resonator properties without requiring separately formed devices on separate substrates.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
62.
FAST-SWITCHING POWER MANAGEMENT INTEGRATED CIRCUIT
A fast-switching power management integrated circuit (PMIC) is provided. The PMIC is configured to provide an average power tracking (APT) voltage to a power amplifier circuit for amplifying a radio frequency (RF) signal modulated in multiple time intervals. Herein, the PMIC is configured to increase or decrease the APT voltage from a present voltage level in a present one of the time intervals to a future voltage level in an upcoming one of the time intervals with very short switching interval (e.g., < 20 nanoseconds). When the APT voltage transitions from the present voltage level to the future voltage level, the PMIC opportunistically activates a voltage amplifier to help ensure proper operation of the power amplifier circuit (e.g., maintain the APT voltage at the present level and reduce ripple in the APT voltage). As a result, the PMIC can switch the APT voltage frequently and rapidly with reduced inrush current.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/213 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/72 - Amplificateurs commandés, c. à d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
63.
ANTENNA ASSEMBLIES AND ANTENNA MODULES FOR USE IN WIRELESS COMMUNICATION SYSTEMS
A wireless communication system comprising one or more cross polarized antenna assemblies with optimized propagation delay that form part of an antenna module having two dominant perpendicular polarizations. Isolation or crosstalk in each antenna module is minimized through an implementation of a sectorized planar isolation and correlation enhancer in the form of a ground plane opening structure.
A system in package (SiP) with an air cavity is disclosed. In one aspect, a technique to bond a lid over the air cavity that reduces the risk of cavity integrity failure is provided. More specifically, an epoxy seal is created on four walls of a lid enclosing the cavity. A further sputtered metal layer is added over the epoxy seal to provide additional structural rigidity, electromagnetic emission suppression and to assist in preventing leaks through the epoxy seal.
H01L 23/053 - Conteneurs; Scellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
65.
BEAMFORMING PHASE CORRECTION IN A WIRELESS COMMUNICATION CIRCUIT
Beamforming phase correction in a wireless communication circuit is provided. The wireless communication circuit is configured to emit multiple processed signals, which are generated by applying a codeword to a radio frequency (RF) signal. The codeword defines a set of complex-valued coefficients that will cause each of the processed signals to be associated with a respective one of multiple defined phases such that the processed signals can form an RF beam when emitted simultaneously from multiple antenna elements. However, some or all of the defined phases can be changed, for example, when the processed signals are amplified. In this regard, in embodiments disclosed herein, a phase correction circuit is configured to determine one or more phase correction terms and apply the determined phase correction terms to one or more of the processed signals to thereby correct undesired phase changes and restore coherency among the processed signals.
H04B 7/06 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
The present disclosure relates to a process to integrate sintered components in a laminate substrate. The disclosed process starts with providing a precursor substrate, which includes a substrate body having an opening through the substrate body, and a first foil layer. Herein, the first foil layer is formed underneath the substrate body, so as to fully cover a bottom of the opening. Next, a sinterable base material is applied into the opening and over the first foil layer, and then sintered at a first sintering temperature to create a sintered base component. A sinterable contact material is applied over the sintered base component, and then sintered at a second sintering temperature to create a sintered contact film. The sintered base component is confined within the opening by the substrate body on sides, by the first foil layer on bottom, and by the sintered contact film on top.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
B32B 18/00 - Produits stratifiés composés essentiellement de céramiques, p.ex. de produits réfractaires
C04B 35/581 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base de nitrure d'aluminium
C04B 35/47 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de titane ou de titanates à base de titanates à base de titanates de métaux alcalino-terreux à base de titanates de strontium
C04B 35/468 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de titane ou de titanates à base de titanates à base de titanates de métaux alcalino-terreux à base de titanates de baryum
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
B22F 7/04 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de couches successives avec une ou plusieurs couches non réalisées à partir de poudre, p.ex. à partir de tôles
C04B 41/50 - Revêtement ou imprégnation avec des substances inorganiques
A transceiver circuit operable in a dynamic power range is provided. In embodiments disclosed herein, the transceiver circuit is configured to generate a radio frequency (RF) signal and a target voltage that is adapted according to a power range of the RF signal. More specifically, the transceiver circuit is configured to generate the target voltage differently when the power range of the RF signal is higher (e.g., ≥ 18dBm) or lower (e.g., < 18 dBm). By adapting the target voltage based on the power range of the RF signal, it is possible to suppress a potential voltage ripple in a modulated voltage generated according to the target voltage to thereby achieve a desired adjacent channel leakage ratio (ACLR) when the RF signal is amplified at a power amplifier circuit based on the modulated voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
A symmetric dual direction coupler has a layout that is controlled such that there is an axis of symmetry between ports and that any switches used within the dual direction coupler are also symmetrical. That is, for a dual direction coupler having a transmitted port, an input port, an isolated port, and a coupled port with switches used to control forward mode or reverse mode for the coupler, the transmitted port and the input port are symmetrical across the axis of symmetry; the isolated port and coupled port are symmetrical across the axis of symmetry; and the switch layout is symmetrical across the axis of symmetry.
H01P 5/18 - Dispositifs à accès conjugués, c. à d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p.ex. coupleurs directionnels
69.
DIFFERENTIAL AMPLIFIER WITH IMPEDANCE TERMINATIONS
A differential amplifier is disclosed with harmonic terminations. The differential amplifier has a first transistor having a first emitter coupled to a fixed voltage node, a first base, and a first collector. A second transistor has a second emitter coupled to the fixed voltage node, a second base, and a second collector. A first capacitor and a first inductor are coupled in series between the first collector and a virtual ground node. A second inductor and a second capacitor are coupled in series between the second collector and the virtual ground node, and a third inductor is coupled between the virtual ground node and the fixed voltage node. The first and second capacitors and first, second, and third inductors have capacitances and inductances, respectively, that are sized to realize second and third harmonic traps for a radio frequency signal being amplified by the differential amplifier.
An electrical arrangement for performing radio frequency isolation for microelectromechanical relay switches. A microelectromechanical relay switch comprises a beam configured to switch from a first position connected to an upper voltage source to a second position connected to a lower voltage source. The microelectromechanical relay switch further comprises at least one frequency isolation circuit or resistor disposed adjacent to the beam. The at least one frequency isolation circuit or resistor biases a direct current potential to allow for electrostatic actuation and further provides a path for transient electrical currents during switching.
Methods and systems for thinning a device wafer to tens of micron, micron, or sub-micron thicknesses are disclosed. Device wafers are thinned by using a two-step grinding process and a chemical mechanical polish (CMP) process. One or more first grinding parameters associated with the first grinding process are determined, received, and/or adjusted before and/or during the performance of the first grinding process. One or more second grinding parameters associated with the second grinding process are determined, received and/or adjusted before and/or during the performance of the second grinding process. One or more polishing parameters associated with the CMP process are determined and/or adjusted before and/or during the performance of the CMP process.
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
B24B 7/04 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verre; Accessoires à cet effet comportant une table porte-pièce rotative
72.
BIDIRECTIONAL COMMUNICATION FOR FRONT END MODULE (FEM)
Systems and method for bidirectional communication for front end modules (FEM) are disclosed. In one aspect, a bidirectional communication path tunneling through an existing communication bus between a FEM and a baseband processor is created. In a particular aspect, a driver may be hosted by an external processor and communicate with the baseband processor to effectuate the desired tunneled communication through the bus between the baseband processor and the FEM. The bidirectional communication may allow the FEM to adjust settings to optimize performance based on the information provided by the baseband processor. Likewise, information from the FEM may be used to adjust operation of the baseband processor.
Power protection loops for amplifier chain elements are disclosed. In one aspect, an amplifier chain may have a power detection circuit detect power within the amplifier chain. When the power exceeds a threshold, a control circuit limits amplification provided by amplifier element(s) within the amplifier chain to throttle or lower power levels within the amplifier chain, thereby protecting elements within the amplifier chain. In this fashion, not only may the amplifier element(s) be protected, but also acoustic filter elements may be protected. The threshold used to throttle or lower the power levels may be based on one or more of: a supply voltage, a sensed temperature, and a mode (e.g., 2G, 3G, 4G, 5G). By protecting these elements, these elements survive power surges instead of failing.
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
74.
FRONT-END MODULE WITH VERTICALLY STACKED DIE AND CIRCULATOR
The present disclosure describes a front-end module (FEM) and a process for making the same. In the disclosed FEM, a thinned flip-chip die, which includes a device region with a metal layer, resides over a module carrier. A mold compound resides over the module carrier, surrounds the thinned flip-chip die, and extends beyond a top surface of the thinned flip-chip die to define an opening over the top surface of the thinned flip-chip die and within the mold compound. A ferrimagnetic portion resides over the top surface of the thinned flip-chip die and within the opening, and a permanent magnetic portion resides over the ferrimagnetic portion and within the opening. Herein, the permanent magnetic portion, the ferrimagnetic portion, and the metal layer of the device region are vertically aligned, and form a circulator vertically stacked with the thinned flip-chip die.
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p.ex. marques de repérage, schémas de test
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
75.
VOLTAGE RIPPLE REDUCTION IN A POWER MANAGEMENT CIRCUIT
Voltage ripple reduction in a power management circuit is disclosed. The power management circuit includes a power amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage and an envelope tracking integrated circuit (ETIC) configured to provide the modulated voltage to the power amplifier circuit via a conductive path. Notably, an output impedance presenting at an input of the power amplifier circuit can interact with a modulated load current in the power amplifier circuit to create a voltage ripple in the modulated voltage to potentially cause an undesirable error in the RF signal. In this regard, a notch circuit is provided, preferably in the ETIC, to reduce the voltage ripple within a modulation bandwidth of the RF signal. As a result, it is possible to minimize the undesirable error, such as root-mean-square (RMS) error vector magnitude (EVM), within the modulation bandwidth of the RF signal.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
76.
ON-CHIP CAPACITANCE MEASUREMENT METHOD AND APPARATUS
An on-chip capacitance measurement method and associated systems and devices are provided. Embodiments described herein rely on using the capacitor under test in an on-chip relaxation oscillator configuration whose charging/discharging currents, supply voltage, and output frequency are measured individually in a measurement block. The voltage thresholds of the relaxation oscillation are calculated from the circuit elements and the measured supply voltage. Because the oscillation frequency of the relaxation oscillator is a function of the capacitance under test, the charging/discharging currents, and the supply voltage (via voltage thresholds), the capacitance under test can be calculated using the measured values of the other quantities. Embodiments described herein provide an accurate, low-power, small-area on-chip system capable of measuring capacitance with high accuracy. An algorithm employing the above method and apparatus for tuning a crystal oscillator is also provided. Relevant circuit implementations used in the on-chip measurement system are also disclosed.
G01R 27/26 - Mesure de l'inductance ou de la capacitance; Mesure du facteur de qualité, p.ex. en utilisant la méthode par résonance; Mesure de facteur de pertes; Mesure des constantes diélectriques
H03B 5/24 - Elément déterminant la fréquence comportant résistance, et soit capacité, soit inductance, p.ex. oscillateur à glissement de phase l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs
A Doherty amplifier system is disclosed. The Doherty amplifier system includes a carrier amplifier having a carrier input and a carrier output, and a peaking amplifier having a peaking input coupled to the carrier input and a peaking output coupled to the carrier output. Analog pre-distortion circuitry is configured to linearize the carrier amplifier and linearize the peaking amplifier by compensating for base-to-collector capacitance loading of the carrier amplifier and the peaking amplifier during operation.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
Equalizer circuitry includes a differential target voltage input, an equalizer output, a first operational amplifier, and a second operational amplifier. The differential target voltage input includes a target voltage input node and an inverted target voltage input node. The first operational amplifier and the second operational amplifier are coupled in series between the differential target voltage input and the equalizer output. The first operational amplifier is configured to receive a target voltage signal and provide an intermediate signal based on the target voltage input signal. The second operational amplifier is configured to receive the intermediate signal and an inverted target voltage signal and provide an output signal to the equalizer output. The first operational amplifier and the second operational amplifier are interconnected with one or more passive components such that a transfer function between the differential target voltage input and the equalizer output is a second-order complex-zero function.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
79.
ACOUSTIC RESONATOR WITH PISTON MODE LIKE ACROSTIC ZIPS YIELDING ACOUSTIC TRANSFORMATION TRAVERSING OTHER RECIPIENTS NEURONAL EMPATHY YONDER
Acoustic resonators with piston mode patches are disclosed. In one aspect, an interdigitated acoustic resonator (300) having plural fingers (308(1)-308(N)) or digits includes a modified piston mode rail. In particular, the piston mode rail is replaced with individual piston mode patches (320(1)-320(N); 322(1)-322(N)) that may be uniform or varied in size. Selection of patch size allows spurious modes to be suppressed to have a smooth filter passband with low overall insertion loss and minimal ripple. Further, the patches may be made through a monolithic process, which reduces overall production cost, complexity and cycle time.
An amplifier is disclosed having a carrier amplifier and a peaking amplifier coupled in parallel with the carrier amplifier, wherein the peaking amplifier has peaking output transistors. A peaking power supply adaptive bias generator is coupled to bias control terminals of the peaking output transistors. The peaking power supply adaptive bias generator is configured to sense supply voltage to the peaking amplifier and increase bias currents to the peaking output transistors as the supply voltage decreases.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 3/193 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
81.
METHODS FOR DEPOSITING PIEZOELECTRIC MATERIALS, AND MATERIALS DEPOSITED THEREWITH
Methods of depositing material onto substrate comprising: depositing a first seed material onto a wafer substrate, the wafer substrate having a face that defines a normal to the substrate, wherein the first seed material is deposited at a pressure of 10 to 20 mTorr to form a pre-seed layer on the wafer substrate, wherein the pre-seed layer has a surface roughness from 1 to 10 nm; depositing a second seed material onto at least a portion of the pre-seed layer at an off-normal incidence angle to form a seed layer on at least a portion of the pre-seed layer; and depositing a bulk piezoelectric material onto at least a portion of the seed layer to form a bulk piezoelectric layer having a c-axis tilt of 35 degrees or greater and a surface roughness of 4.5 nm or less. Structures and bulk acoustic wave resonators containing same are also included.
H10N 30/079 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par dépôt de couches piézo-électriques ou électrostrictives, p.ex. par impression par aérosol ou par sérigraphie à l’aide de couches intermédiaires, p.ex. pour contrôler la croissance
H10N 30/00 - Dispositifs piézo-électriques ou électrostrictifs
82.
HYBRID TECHNIQUE FOR EARLY RISK MITIGATION OF PLATFORM SOFTWARE MIGRATION
Systems and methods for a hybrid technique for risk mitigation of platform software migration are provided. In some embodiments, a method for mitigating risk of platform software changes includes one or more of: detecting change using static code analysis; and detecting dynamic/runtime behavioral changes. In some embodiments, early detection of code base migration issues (long before the actual hardware availability) reduces OEM resource requirements for solving software integration issues. Since OEMs have NDAs with platform providers that prohibit OEMs from sharing material with third parties, some embodiments of the current disclosure allow solving platform code base migration issues early during software integration in the OEM environment without having access to a vast majority of the code base; and/or without the luxury of actually being able to see/touch the problem.
A bridge-T filter is disclosed. In one aspect, the bridge-T filter may include one or more inductors associated with acoustic resonators to assist in providing out-of-band rejection while improving fractional bandwidth of the filter. In specific aspects, the additional inductors may be placed in series or parallel to the acoustic resonators. The improved fractional bandwidth and better out-of-band rejection reduces unwanted signals and improves the user experience.
Assemblies including a bulk acoustic wave acoustic sensor die having a first and an opposing second major surface, the die including a piezoelectric structure, a first and a second electrode electrically connected to the piezoelectric structure, and an active surface on the first major surface of the die; a printed circuit board (PCB), the PCB having a first major surface and an opposing second major surface and including a slot spanning from the first major surface to the second major surface through the PCB; a first bond electrically and mechanically connecting the die to the PCB; and a second bond electrically and mechanically connecting the die to the PCB, wherein the first and the second bonds are located on either side of the slot through the PCB and the active surface of the die is above the slot in the PCB.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
A low-noise amplifier is disclosed having a first transistor with a first current terminal coupled to a supply voltage rail through a load resistor and a second current terminal coupled to an input node, wherein a bias resistor is coupled between the input node and a fixed voltage node. A second transistor has a third current terminal coupled to an output node and a fourth current terminal coupled to the fixed voltage node. A feedback capacitor is coupled between the input node and the output node, wherein capacitance of the feedback capacitor is sized to eliminate the need for coupling an input impedance matching inductor to the input node.
Low noise amplifiers (LNAs) are disclosed. In one aspect, an LNA may have distortion cancellation that is orthogonally implemented relative to noise cancellation such that changes to the distortion cancellation do not affect the noise cancellation. In further exemplary aspects, cancellation circuitry is added in parallel to a main or primary LNA path. The cancellation circuitry may include an initial impedance matching amplifier that effectuates noise cancellation and a second amplifier that effectuates distortion cancellation. Variations in the placement and composition of the second amplifier are provided. By providing a second path that allows for independent control of noise and distortion cancellation, overall performance of the LNA is improved.
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
Systems and method for location determination in a distributed system are disclosed. In one aspect, the distributed system operates at frequencies where obstacles and distance may preclude direct connection between a system node and a remote mobile device. The system may determine the location of the remote mobile device using an intermediate device and thus be a location system. Specifically, a position of the intermediate device relative to the system node is calculated and a position of the remote mobile device relative to the intermediate device is calculated. The two positions may be combined to determine a position of the remote mobile device relative to the system node. Once the location of the remote mobile device is known relative to the system node, a variety of location services become available.
H04W 64/00 - Localisation d'utilisateurs ou de terminaux pour la gestion du réseau, p.ex. gestion de la mobilité
G01S 5/02 - Localisation par coordination de plusieurs déterminations de direction ou de ligne de position; Localisation par coordination de plusieurs déterminations de distance utilisant les ondes radioélectriques
An asymmetrical power amplifier circuit is provided. The asymmetrical power amplifier circuit includes a carrier amplifier and a peak amplifier. The carrier amplifier is always active to amplify a radio frequency (RF) to a carrier output power, while the peak amplifier is only active to amplify the RF signal to a peak output power when a time-variant output power of the RF signal is higher than a predefined power threshold. The RF signal in the carrier output power is summed with the RF signal in the peak output power to thereby output the amplified RF signal in the time-variant output power. Unlike a conventional symmetrical power amplifier, the carrier output power and the peak output power are different at a peak of the time-variant output power. As such, the carrier amplifier and the peak amplifier can both operate with optimal efficiency based on a same modulated voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
An antenna tuning circuit is disclosed. The antenna tuning circuit is configured to make multiple estimates on an antenna impedance at an antenna port and determine an optimum tuning state for antenna tuning based on the antenna impedance estimates. The antenna tuning circuit may be further configured according to various embodiments of the present disclosure to minimize impedance estimation error, reduce magnitude and/or phase disturbance during antenna tuning, and extrapolate antenna impedance estimates for both transmit and receive frequencies. As a result, the antenna tuning circuit can accomplish autonomous antenna tuning optimization to thereby improve transmit and receive performance in a wireless communication device.
H01Q 5/335 - Dispositions permettant un fonctionnement sur différentes gammes d’ondes Éléments rayonnants individuels ou couplés, chaque élément étant alimenté d’une façon non précisée utilisant des circuits ou des composants dont la réponse dépend de la fréquence, p.ex. des circuits bouchon ou des condensateurs au point d’alimentation, p.ex. aux fins d’adaptation d’impédance
A switchable RF transmit/receive (TX/RX) multiplexer, which includes a group of RF TX bandpass filters, a group of RF TX switching elements, and a group of RF RX bandpass filters; is disclosed. The group of RF TX bandpass filters includes a first RF TX bandpass filter and a second RF TX bandpass filter, such that each of the first RF TX bandpass filter and the second RF TX bandpass filter is coupled to a first filter connection node. The group of RF TX switching elements includes a first RF TX switching element coupled between the first filter connection node and a first common connection node, which is coupled to a first RF antenna. Each of the group of RF RX bandpass filters is coupled to the first common connection node.
A concurrent multistandard detection receiver with prepacket transmission detection capabilities is disclosed. In one aspect, a receiver is configured to switch between two different wireless protocols, alternately listening for incoming messages on one then the other protocol. For at least one listening period, the receiver uses two pretransmission detectors that are configured to detect predictable pretransmission emissions. A third detector may detect traditional transmissions. On detection of a signal that matches a predictable pretransmission emission or a traditional transmission, the receiver confirms that an incoming signal according to that standard is being received and acts in accordance with that signal. If no such emission or transmission was received, or if after trying to confirm the presence of an incoming signal fails, the receiver switches back to listening according to the other protocol.
H04B 7/26 - Systèmes de transmission radio, c. à d. utilisant un champ de rayonnement pour communication entre plusieurs postes dont au moins un est mobile
H04L 69/22 - Analyse syntaxique ou évaluation d’en-têtes
H04L 7/04 - Commande de vitesse ou de phase au moyen de signaux de synchronisation
A transistor is disclosed having a substrate, a device layer disposed over the substrate, a gate electrode disposed over the device layer, and a drain electrode disposed over the substrate and spaced from the gate electrode. A first source electrode is disposed over the substrate opposite the drain electrode and spaced from the gate electrode. A second source electrode is disposed over the substrate spaced from the drain electrode opposite the gate electrode. A dielectric is disposed over the device layer, the gate electrode, and the drain electrode between the first source electrode and the second source electrode. A conductive interconnect couples the first source electrode and the second electrode and extends over the dielectric. The conductive interconnect comprises a shield wall that extends from the conductive interconnect into the dielectric between the gate electrode and the drain electrode with a distal end that is spaced above the device layer.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/66 - Types de dispositifs semi-conducteurs
93.
Mehtof of manufacturing temperature compensated surface acoustic wave device
Embodiments described herein may provide a surface acoustic wave (SAW) device, methods of fabricating the SAW device, and a system incorporating the SAW device. The SAW device may include a piezoelectric substrate and individual resonators may be formed by a plurality of electrodes on the surface of the piezoelectric substrate. A dielectric layer having a positive thermal coefficient of frequency (TCF) may be formed on each of the plurality of electrodes. In various embodiments, temperature compensation may be achieved by providing more or less of the dielectric layer on at least one resonator than on the other resonators based on a configuration of the resonators. In various embodiments, temperature compensation may be achieved by providing at least one resonator with a different duty factor than the other resonators based on a configuration of the resonators.
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H10N 30/06 - Formation d’électrodes ou d’interconnexions, p.ex. de connections électriques ou de bornes
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
G10K 11/18 - Procédés ou dispositifs pour transmettre, conduire ou diriger le son
H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
94.
MOLDING COMPOUND THERMAL ENHANCEMENT UTILIZING GRAPHENE OR GRAPHITE MATERIALS
The present disclosure relates to a semiconductor package with a thermally enhanced molding compound. The disclosed semiconductor package includes a module carrier having an upper surface, a die formed over the upper surface of the module carrier, and a thermally enhanced molding compound component formed over the upper surface of module carrier to encapsulate the die. Herein, the thermally enhanced molding compound is formed from a molding compound mixed with a thermal additive and has no air pockets or voids. The thermal additive includes a number of carbon flakes or a number of carbon spherical particles. The thermal additive has a thermal conductivity larger than 450 W/m·K and an electrical resistivity larger than 90 μΩ.cm. In one embodiment, the thermal additive includes a number of graphene flakes, a number of graphene particles, a number of graphite flakes, or a number of graphite particles.
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
95.
LOW NOISE AMPLIFIER WITH PARASITIC CAPACITANCE NEUTRALIZATION
Disclosed is a low noise amplifier system. Included is a main amplifier having a main input coupled to a RF input and a main output connected to an RF output and an impedance amplifier having an impedance input coupled to the RF input and an impedance output coupled to the RF output, wherein the impedance amplifier is configured to provide input impedance matching to the main amplifier. The impedance amplifier also provides a first noise path that passes through the impedance amplifier such that the noise generated by the impedance amplifier is substantially out of phase with the noise that passes through a second noise path that passes through the main amplifier. A neutralization amplifier is configured to reduce parasitic capacitive loading within the first noise path.
Multichip module thermal management through backside metal systems and methods are disclosed. In one aspect, a multichip module includes one or more flip chip integrated circuits (ICs), each having a backside to which a metal heat conductor or spreader is attached. The presence of the metal heat conductor on the backside of the flip chip ICs allows for a better thermal path to remove heat from the ICs relative to the substrate. The improved thermal path reduces the likelihood of damage to the ICs or delamination of the module. A variety of methods are proposed to construct the backside metal systems. Additionally, a variety of capture features may be used to assist in structural integrity.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
Disclosed is a low noise amplifier system. Included is a main amplifier having a main input coupled to a RF input and a main output connected to an RF output and an impedance amplifier having an impedance input coupled to the RF input and an impedance output coupled to the RF output, wherein the impedance amplifier is configured to provide input impedance matching to the main amplifier. The impedance amplifier also provides a first noise path that passes through the impedance amplifier such that the noise generated by the impedance amplifier is substantially out of phase with the noise that passes through a second noise path that passes through the main amplifier.
Amplitude modulation-phase modulation (AM-PM) linearization in a power amplifier using bias circuitry, which fixes a bias of a cascode transistor within a power amplifier is disclosed. In particular, the cascode transistor may switch between operation in a saturation mode and a triode mode. The bias is set such that the cascode transistor operates at a fixed duty cycle in the triode mode relative to the saturation mode for a wide range of signal levels from small-signal to large-signal. An exemplary duty cycle is fifty percent (50%), although other duty cycles may be used. This bias will result in a constant capacitance contributed by the cascode device to the power amplifier over a wide signal level range.
Amplitude modulation-phase modulation (AM-PM) linearization in power amplifier techniques are disclosed. In one aspect, a fixed capacitor is placed in parallel to a cascode device within a power amplifier. The sum of capacitances from the cascode device and the parallel capacitor may be relatively fixed across voltage swings, allowing for small phase changes across a wide range of signal amplitudes passing through the power amplifier. The small phase changes across voltage swings make it easier to provide compensation for such phase changes resulting in a more efficient device.
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
100.
LAMINATE SUBSTRATE WITH EMBEDDED MULTI-LAYERED HEAT SLUG
The disclosure is directed to an electronic device with an embedded multi-layered heat slug. The electronic device in includes a substrate having a substrate body with a laminate layer. The substrate further includes a heat slug embedded within the substrate body. The heat slug includes a top layer having a first thermal conductivity and a first thermal expansion coefficient, a bottom layer having a second thermal conductivity and a second thermal expansion coefficient, and a core layer having a third thermal conductivity and a third thermal expansion coefficient. The third thermal conductivity is less than the first thermal conductivity and the second thermal conductivity, and the third thermal expansion coefficient is less than the first thermal expansion coefficient and the second thermal expansion coefficient. In certain embodiments, the top layer and the bottom layer comprise copper, and the core layer comprises copper-molybdenum.
