An output-amplifier-based reciprocal quantum logic (RQL) bias-level sensor is used to measure and/or calibrate bias parameters of AC and/or DC bias signals provided to RQL circuitry. The bias signals can include an output amplifier output bias current. The bias-level sensor includes a stack of DC SQUIDs that are supplied their inputs from outputs of respective Josephson transmission lines (JTLs) to which the SQUIDs are transformer-coupled. Staging relative strengths of the bias taps of the JTLs, or the critical currents of the Josephson junctions in the DC SQUIDs, allows an output voltage signal of the bias-level sensor to be indicative of whether a provided bias value is an improvement or optimization of the bias value when varied over a range. The outputs of two such bias-level sensors driven by I and Q clocks can be compared to adjust AC bias amplitudes of the clocks. Relative clock phase can be similarly adjusted.
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit
G01R 33/035 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs supraconducteurs
H10N 60/80 - Dispositifs supraconducteurs - Détails de structure
H10N 69/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément supraconducteur couvert par le groupe
2.
RF MODULES WITH AN ENCLOSURE HAVING A MICROMACHINED INTERIOR USING SEMICONDUCTOR FABRICATION
An exemplary RF module includes a dielectric substrate with metal traces on one surface that connect high frequency components and provide reference ground. Other metal traces on the other surface of the substrate also provide high frequency transmission lines and reference ground. An enclosure made using semiconductor manufacturing technology is mounted to the substrate and has conductive interior recesses defined by extending walls that are connected to the reference ground. The recesses surround the respective components and provide electromagnetic shielding. The dimensional precision in the location and smoothness of the walls and recesses due to the semiconductor manufacturing technology provides repeatable unit-to-unit RF characteristics of the RF module. One way of mounting the enclosure to the substrate uses a plurality of metal bonding bumps extending outwardly from the walls to engage reference ground metal traces on the substrate. Applied pressure deforms the bonding bumps to form a metal-to-metal bond.
One example includes an underwater docking system. The system includes an underwater dock that includes a docking rod. The docking rod includes electrical contacts around a periphery of the docking rod. The system also includes a docking assembly mounted on an underwater vehicle. The docking assembly includes an actuator and a hook assembly that includes a docking arm and a jaw assembly. The docking arm physically guides the docking rod into the jaw assembly and the actuator closes the jaw assembly around the docking rod to provide electrical connection of brush contacts of the jaw assembly with the electrical contacts of the docking rod to provide electrical power from a power source via the electrical contacts to the underwater vehicle. Each of the electrical contacts and the brush contacts can be formed from a self-passivating material.
Fuel used as a coolant in an aircraft can be thermally conditioned for active thermal management of the airframe and engine. The fuel can be thermally conditioned using the residual cooling capacity of a power and thermal module (PTM), providing flexibility of thermal system design, or via a compact engine-mounted turbo cooler, to maximize system efficiency. The fuel can be stored in a thermal reserve tank to provide a missionized heat sink capable serviceable for periodic high heat flux equipment. The cooling and provision of cooled fuel to aircraft components can be intelligently controlled to provide efficient cooling and effectively unlimited ground hold times.
B64D 37/34 - Conditionnement du carburant, p.ex. réchauffage
B64D 13/06 - Aménagements ou adaptations des appareils de conditionnement d'air pour équipages d'aéronefs, passagers ou pour emplacement réservé au fret l'air étant climatisé
B64D 13/08 - Aménagements ou adaptations des appareils de conditionnement d'air pour équipages d'aéronefs, passagers ou pour emplacement réservé au fret l'air étant climatisé l'air étant réchauffé ou refroidi
One example includes a MOT system. The system includes first optical source configured to provide a plurality of first optical beams parallel to a central axis associated with the MOT system, and a first set of optics configured to focus the first optical beams to the central axis through a trapping region comprising a vapor of atoms. The system also includes a second optical source configured to provide a plurality of second optical beams parallel to the central axis associated with the MOT system, and a second set of optics configured to focus the second optical beams to the central axis through the trapping region. Each of the second optical beams can be coaxial with a respective one of the first optical beams, such that each of the first optical beams is counterpropagating with a respective one of the second optical beams.
A map control module receives a stream of map data characterizing a geographic region proximal to a vehicle and outputs a moving map, and the moving map is divisible into a matrix of cells. A map item control receives a stream of point of interest (POI) data characterizing a plurality of POIs within the boundary and categorizes each of the plurality of POIs to define a set of categories. The map item control determines a display location of a map item within the matrix of cells for each of the plurality of POIs and determines an importance for each POI within a same category. The map item control forms a set of clusters of map items. Each map item in a given cluster of map items has a same cell and a same category. The map item control selects a top-item for each cluster of map items.
One example includes a MOT system. The system includes first optical source configured to provide a plurality of first optical beams parallel to a central axis associated with the MOT system, and a first set of optics configured to focus the first optical beams to the central axis through a trapping region comprising a vapor of atoms. The system also includes a second optical source configured to provide a plurality of second optical beams parallel to the central axis associated with the MOT system, and a second set of optics configured to focus the second optical beams to the central axis through the trapping region. Each of the second optical beams can be coaxial with a respective one of the first optical beams, such that each of the first optical beams is counterpropagating with a respective one of the second optical beams.
One embodiment includes an electrometer system. The system includes a sensor cell comprising alkali metal atoms within, and an optical beam system configured to provide at least one optical beam through the sensor cell to provide a first Rydberg energy state of the alkali metal atoms, the at least one optical beam exiting the sensor cell as a detection beam. The system also includes a tuning laser configured to generate a tuning beam having a predetermined tuning frequency between the first Rydberg energy state and an intermediate energy state of the alkali metal atoms. The system further includes a detection system configured to monitor the detection beam to detect an external signal having a frequency that is approximately equal to an energy difference between the first Rydberg energy state and a second Rydberg energy state based on monitoring the detection beam.
G01R 15/24 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs modulateurs de lumière
G01R 23/17 - Analyse de spectre; Analyse de Fourier avec des dispositifs optiques auxiliaires
G01R 29/08 - Mesure des caractéristiques du champ électromagnétique
9.
ADDITIVE MANUFACTURING METHODS FOR FORMING HIGH-TEMPERATURE COMPOSITE STRUCTURES AND RELATED STRUCTURES
Methods for fabricating high-temperature composite structures (e.g., structures comprising carbon-carbon composite materials or ceramic composite matrix (CMC) materials and configured for use at temperature at or exceeding about 2000° F. (1093° C.)) include forming precursor structures by additive manufacturing (“AM”) (e.g., “3D printing”) with a filament drawn from a spool. The precursor structures are exposed to high temperatures to pyrolyze a precursor matric material of the initial 3D printed structure. A liquid resin is used to impregnate the pyrolyzed structure, to densify the structure into a near-net final shape. Use of expensive and time-consuming molds and post-processing machining may be avoided. Large, unitary, integrally formed parts conducive for use in high-temperature environments may be formed using the methods of the disclosure.
C04B 35/83 - Fibres de carbone dans une matrice carbonée
B29C 64/118 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p.ex. dépôt d’un cordon continu de matériau visqueux utilisant un matériau filamentaire mis en fusion, p.ex. modélisation par dépôt de fil en fusion [FDM]
B29C 64/30 - Opérations ou équipements auxiliaires
Vehicle capture assemblies and related devices, systems, and methods include one or more probe assemblies for engaging with and securing the target vehicle. The one or more probe assemblies may include one or more attenuation features or movable joints to enable and/or dampen movement of the one or more probe assemblies relative to a capture vehicle.
One embodiment includes an electrometer system. The system includes a sensor cell comprising alkali metal atoms within, and an optical beam system configured to provide at least one optical beam through the sensor cell to provide a first Rydberg energy state of the alkali metal atoms, the at least one optical beam exiting the sensor cell as a detection beam. The system also includes a tuning laser configured to generate a tuning beam having a predetermined tuning frequency between the first Rydberg energy state and an intermediate energy state of the alkali metal atoms. The system further includes a detection system configured to monitor the detection beam to detect an external signal having a frequency that is approximately equal to an energy difference between the first Rydberg energy state and a second Rydberg energy state based on monitoring the detection beam.
A capacitive discharge unit (CDU) for detonating an explosive in response to a control signal comprises a set of CDU components, including an exploding foil initiator (EFI), a trigger circuit, a firing capacitor, and an insulated-gate bipolar transistor (IGBT) firing switch. In various embodiments the components are arranged on a board for mechanically and electrically supporting the components in an ordered arrangement along a CDU axis where the CDU having an axial length defined by the ordered arrangement of two or more of the EFI, the firing capacitor, and the IBGT firing switch, wherein the trigger circuit is offset from the CDU axis such that the trigger circuit does not contribute to the axial length.
One example includes a navigation system. The navigation system includes an inertial navigation system (INS) that is configured to provide a coordinate frame corresponding to an inertial reference of the INS relative to a geodetic coordinate system. The coordinate frame includes a reference axis that defines a reference orientation of the INS. The system also includes an optical tracking device configured to obtain a reference image to determine an orientation of a boresight axis of the optical tracking device. The system further includes an alignment controller configured to compare the reference axis based on the coordinate frame and the boresight axis based on the reference image to determine an angular misalignment between the reference axis and the boresight axis, and to adjust the reference orientation to align the reference axis to the boresight axis based on the determined angular misalignment.
G01C 21/16 - Navigation; Instruments de navigation non prévus dans les groupes en utilisant des mesures de la vitesse ou de l'accélération exécutées à bord de l'objet navigant; Navigation à l'estime en intégrant l'accélération ou la vitesse, c. à d. navigation par inertie
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
A system for fabricating an optical element. The system includes means for welding an array of fibers to the optical element, means for measuring an angle error and a position error of each fiber, means for calculating a correction for each fiber for the angle error and the position error and means for correcting the angle and position of each fiber using the calculated corrections.
37 - Services de construction; extraction minière; installation et réparation
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Online and retail sales of electronic systems, namely, air platform navigational instruments, comprising accelerometers, ring laser gyros, and parts therefore; Advanced exchange services provisioning and delivery services of replacement aircraft equipment Repair of electronic systems, namely, air platform navigational instruments, comprising accelerometers and ring laser gyros; Overhaul of electronic systems, namely, air platform navigational instruments, comprising accelerometers and ring laser gyros; Repair and overhaul of subassembly of air platform navigational instruments, comprising accelerometers and ring laser gyros; Aircraft maintenance and repair services; Repair and maintenance of grounded aircraft Updating of computer software; updating of computer software in inertial reference systems and air platform navigational instruments related to magnetic variation correction (MAGVAR)
Embodiments of the present disclosure relate generally to testing one or more signal paths. For example, a signal path may include a phase shifter that may impart a phase shift to signals passing through the signal path. Some embodiments may test a phase shift imparted to a signal by the signal path, including the phase shifter. Some embodiments may test the phase shift by comparing the phase of a signal at an input of the signal path with the phase of a signal at the output of the signal path. Some embodiments may test the phase shift by providing a signal at inputs of two phase paths and comparing the phases of signals at the outputs of the signal paths. Some embodiments may further adjust a phase shifter responsive to the test. Related devices, systems and methods are also disclosed.
An atomic clock system includes a waveguide cavity that is sealed and comprises a gas enclosed therein. The waveguide cavity has a length that is an integer multiple of approximately one half-wavelength of a resonant frequency of the gas between two states. An oscillator system generates an RF signal through the waveguide cavity. The RF signal has a signal frequency that is approximately equal to the resonant frequency of the gas. A detection system measures a characteristic of the RF signal through the waveguide cavity to detect a maximum transition between the two states of the gas and to provide a feedback signal to the oscillator system to lock the signal frequency of the RF signal to the resonant frequency of the gas based on detecting the maximum transition. The detection system provides a frequency reference output signal based on the signal frequency of the RF signal.
G04F 5/14 - Appareils pour la production d'intervalles de temps prédéterminés, utilisés comme étalons utilisant des horloges atomiques
G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p.ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
37 - Services de construction; extraction minière; installation et réparation
38 - Services de télécommunications
Produits et services
Clothing and apparel, namely, tops, bottoms, headwear, shirts, T-shirts, sweatshirts, polo shirts, button down shirts, tank tops, sweat suits, pants, sweat pants, shorts, clothing jackets, beachwear, baseball caps, hats, visors being headwear, coats, windbreakers, and neckties Business management and operational services, namely, project management and oversight of construction, repair, research, launch and recovery operations engaged in high technology laboratories and facilities; management services rendered to high technology laboratories and facilities Construction and repair services, namely, aircraft maintenance and modification services, and maintenance and modification services for aerospace, surveillance and reconnaissance systems hardware; aeronautical target maintenance services; conversion and installation of aircraft and aerospace components to the order and specification of others Telecommunication services, namely, transmission of digital information, providing access to computerized communication networks; computer communication services; satellite transmission and communication services; radio and wireless transmission of digital information; network communication services connecting sensors and communications devices with analysis and decision-making devices in a networked environment across space, air, land, sea, and cyber domains (joint all-domain command and control)
An atomic clock system includes a waveguide cavity that is sealed and comprises a gas enclosed therein. The waveguide cavity has a length that is an integer multiple of approximately one half-wavelength of a resonant frequency of the gas between two states. An oscillator system generates an RF signal through the waveguide cavity. The RF signal has a signal frequency that is approximately equal to the resonant frequency of the gas. A detection system measures a characteristic of the RF signal through the waveguide cavity to detect a maximum transition between the two states of the gas and to provide a feedback signal to the oscillator system to lock the signal frequency of the RF signal to the resonant frequency of the gas based on detecting the maximum transition. The detection system provides a frequency reference output signal based on the signal frequency of the RF signal.
H03L 7/26 - Commande automatique de fréquence ou de phase; Synchronisation utilisant comme référence de fréquence les niveaux d'énergie de molécules, d'atomes ou de particules subatomiques
HIGH-PERFORMANCE OPTICAL ABSORBER COMPRISING FUNCTIONALIZED, NON-WOVEN, CNT SHEET AND TEXTURIZED POLYMER FILM OR TEXTURIZED POLYMER COATING AND MANUFACTURING METHOD THEREOF
A method using capillary force lamination (CFL) for manufacturing a high-performance optical absorber, includes: texturizing a base layer of the high-performance optical absorber, the base layer comprising one or more of a polymer film and a polymer coating; joining a surface layer of the high-performance optical absorber to the base layer, the surface layer comprising a non-woven carbon nanotube (CNT) sheet; wetting the joined surface layer and base layer with a solvent; allowing surface tension forces of the solvent to draw the non-woven CNT sheet into the base layer, thereby texturizing the surface layer; drying the joined surface layer and base layer; and treating the resulting base layer with plasma, creating the high-performance optical absorber.
A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
Pulse-generator-based reciprocal quantum logic (RQL) bias-level sensors are fabricated on an RQL integrated circuit (IC) to sample AC or DC bias values provided to operational RQL circuitry on the RQL IC. The bias-level sensors include pulse generators having strengthened or weakened bias taps (transformer couplings to RQL AC clock resonators or DC bias lines) as compared to bias taps of Josephson transmission lines in the operational RQL circuitry, or Josephson junctions (JJs) with larger or smaller critical currents as compared to JJs in the operational RQL circuitry. Pulse generators with weakened bias taps or larger JJs can have lower limits of their operational ranges placed near an optimal bias point at the centroid of the operating region of the operational RQL circuitry. The bias-level sensors can be staged by relative strength to indicate whether a provided bias value is an improvement when varied over a range.
H03K 19/195 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs supraconducteurs
H03K 19/20 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion caractérisés par la fonction logique, p.ex. circuits ET, OU, NI, NON
H03K 19/17736 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants disposés sous forme matricielle - Détails structurels des ressources de routage
H03K 3/38 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation, comme éléments actifs, de dispositifs supraconducteurs
A method of making a photonic integrated circuit (PIC) is provided. The method comprises depositing a functional resist material layer over a substrate, disposing and pressing a stamp with a plurality of nanopatterns into the functional resist material for a period of time, and removing the stamp from the functional resist material to provide nanofeatures that are inverted versions of the nanopatterns, wherein the nanofeatures form one or more optical elements.
One example includes an electrometer system. The system includes a sensor cell comprising an alkali metal vapor within. The system also includes an excitation beam system configured to provide at least one excitation optical beam through the sensor cell to excite the alkali metal atoms from a. ground state to a Rydberg energy state. The system also includes a stimulated emission beam system configured to provide a stimulated emission optical beam through the sensor cell to provide energy decay of the alkali metal atoms to a decay energy state that is less than the Rydberg energy state. The system further includes a detection system configured to monitor fluorescent detection light emitted from the alkali metal atoms as the alkali metal atoms decay from the decay state to the ground state to determine signal characteristics of an external signal based on an intensity of the fluorescent detection light.
G01N 21/63 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité optiquement
25.
ELECTROMETER SYSTEM WITH RYDBERG DECAY FLUORESCENCE DETECTION
One example includes an electrometer system. The system includes a sensor cell comprising an alkali metal vapor within. The system also includes an excitation beam system configured to provide at least one excitation optical beam through the sensor cell to excite the alkali metal atoms from a ground state to a Rydberg energy state. The system also includes a stimulated emission beam system configured to provide a stimulated emission optical beam through the sensor cell to provide energy decay of the alkali metal atoms to a decay energy state that is less than the Rydberg energy state. The system further includes a detection system configured to monitor fluorescent detection light emitted from the alkali metal atoms as the alkali metal atoms decay from the decay state to the ground state to determine signal characteristics of an external signal based on an intensity of the fluorescent detection light.
A map control module receives a stream of map data characterizing a geographic region proximal to a vehicle and outputs a moving map, and the moving map is divisible into a matrix of cells. A map item control receives a stream of point of interest (POI) data characterizing a plurality of POIs within the boundary and categorizes each of the plurality of POIs to define a set of categories. The map item control determines a display location of a map item within the matrix of cells for each of the plurality of POIs and determines an importance for each POI within a same category. The map item control forms a set of clusters of map items. Each map item in a given cluster of map items has a same cell and a same category. The map item control selects a top-item for each cluster of map items.
G01C 21/36 - Dispositions d'entrée/sortie pour des calculateurs embarqués
G06F 3/04817 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] fondées sur des propriétés spécifiques de l’objet d’interaction affiché ou sur un environnement basé sur les métaphores, p.ex. interaction avec des éléments du bureau telles les fenêtres ou les icônes, ou avec l’aide d’un curseur changeant de comport utilisant des icônes
One example includes a vapor cell. The cell includes a transparent enclosure and alkali metal atoms enclosed within the transparent enclosure. The alkali metal atoms can be configured to be stimulated from a first energy state to a second energy state in response to an optical beam provided through the vapor cell and to emit fluorescent light in response to energy of the alkali metal atoms decaying from the second energy state to the first energy state. The cell further includes a reflective coating that is provided on an exterior surface of the transparent enclosure to surround the vapor cell to provide a reflective interior surface with respect to the transparent enclosure of the vapor cell to reflect the fluorescent light. The reflective coating can include a detection window configured to facilitate escape of the fluorescent light from the vapor cell for optical detection.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A superconductor system is provided that includes a superconductor device comprising a plurality of superconductor layers and dielectric layers interleaved with the plurality of superconductor layers, wherein at least one superconductor layer is a ground plane. The superconductor device further includes superconductor circuitry that resides within one or more of the plurality of superconductor layers, and one or more active moats extending through the plurality of superconductor layers and the dielectric layers, wherein at least one flux vortex caused by cryogenic cooling can be removed from at least one of the plurality of superconductor layers into the one or more active moats by the activating and deactivating of the one or more active moats.
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
H01B 12/06 - Conducteurs, câbles ou lignes de transmission supraconducteurs ou hyperconducteurs caractérisés par leurs formes à couches ou fils déposés sur des supports ou des noyaux
H01B 12/16 - Conducteurs, câbles ou lignes de transmission supraconducteurs ou hyperconducteurs caractérisés par le refroidissement
29.
AERIAL VEHICLE HAVING ANTENNA ASSEMBLIES, ANTENNA ASSEMBLIES, AND RELATED METHODS AND COMPONENTS
An aerial vehicle includes a body and an antenna assembly mounted to the body. The antenna assembly includes a fairing component comprising a hollow body, a conductive coating formed on at least an inner surface of the fairing component, a plurality of antenna elements formed in the conductive coating, each antenna element including a first slot line defining a first transmission line and a second slot line defining a second transmission line, an insulator sleeve disposed within the fairing component, wherein an outer surface of the insulator sleeve at least substantially matches an inner surface of the fairing component, and a plurality of cable assemblies operably coupled to the plurality of antenna elements, wherein each cable assembly is coupled to a respective antenna element.
An apparatus for particle collection is provided. The apparatus includes a magnetic element configured to generate a tapered magnetic ion transport tunnel that collects particles from a local environment, a detector configured to perform one or more measurements of the collected particles, and ion optics configured to transport the collected particles to the detector.
In some examples, an isolation transformer can include a first wire having a first insulation thickness and a second wire having a second insulation thickness that is different than the first insulation thickness. The isolation transformer can further include a plurality of magnetic cores of magnetic material that can be configured to surround portions of each of the first and second wires along respective circumferences of the first and second wires to provide the isolation transformer.
This disclosure relates to systems and methods for measuring impedance characteristics of a cryogenic device under test (DUT). A channel select circuit can be configured in a first state to electrically isolate a channel output circuit from the cryogenic DUT and in a second state to electrically couple the channel output circuit to the cryogenic DUT, and at least one resistor can be positioned along a transmission path that couples a pattern generator circuit to a channel output circuit that includes the channel select circuit. A controller can be configured to cause respective test current signals to be provided along the transmission path when the channel select circuit is in respective first and second states to establish respective first and second voltages across the at least one resistor, determine first and second impedance characteristics of the transmission path for determining an impedance of the cryogenic DUT.
G01R 27/16 - Mesure de l'impédance d'un élément ou d'un réseau dans lequel passe un courant provenant d'une autre source, p.ex. câble, ligne de transport de l'énergie
A robot intelligence engine receives highly immersive virtual environment (HIVE) data characterizing a set of robot tasks executed by a test robot in a HIVE, wherein the robot tasks of the set of robot tasks include a robot skill. The robot intelligence engine receives sensor data from a problem detecting robot deployed in an environment of operation that characterizes conditions corresponding to a detected problem and searches the set of robot tasks to identify a subset of the robot tasks that are potentially employable to remedy the detected problem. The robot intelligence engine simulates the subset of robot tasks to determine a likelihood of success for the subset of robot tasks. The simulation generates a set of unsupervised robot tasks that are potentially employable to remedy the detected problem. The robot intelligence engine selects one of the subset of robot tasks or one of the unsupervised robot tasks.
A robot intelligence engine receives highly immersive virtual environment (HIVE) data characterizing a set of robot tasks executed by a test robot in a HIVE, wherein the robot tasks of the set of robot tasks include a robot skill. The robot intelligence engine receives sensor data from a problem detecting robot deployed in an environment of operation that characterizes conditions corresponding to a detected problem and searches the set of robot tasks to identify a subset of the robot tasks that are potentially employable to remedy the detected problem. The robot intelligence engine simulates the subset of robot tasks to determine a likelihood of success for the subset of robot tasks. The simulation generates a set of unsupervised robot tasks that are potentially employable to remedy the detected problem. The robot intelligence engine selects one of the subset of robot tasks or one of the unsupervised robot tasks.
A system for establishing and maintaining a chain of trust can include a root of trust (RoT) executing a root trusted server that pushes authenticated code and data into memory of a given node in a plurality of nodes. The RoT can also record a memory address range of a static portion of the authenticated code and a corresponding static data in the given node and cause the given node to execute the authenticated code in response to the pushing to establish a trusted relationship between the trusted server of the RoT and the given node. The root trusted server also monitors the given node to ensure that the given node executes trusted operations. The authenticated code in the memory of the given node can include a trusted server that pushes authenticated code into memory of another node in the plurality of nodes.
H04L 9/00 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité
H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
G06F 21/64 - Protection de l’intégrité des données, p.ex. par sommes de contrôle, certificats ou signatures
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
One example includes a quantum lidar system. The system includes a beam generator configured to generate a signal beam and an idler beam and a beam combiner configured to generate a combined optical beam comprising the signal beam and the idler beam. The system also includes a lidar transmitter configured to transmit the combined optical beam to a target and a lidar receiver configured to receive the combined optical beam and a reflected beam of the combined optical beam reflected from the target to generate lidar data associated with the target.
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
37.
JOSEPHSON JUNCTION DEVICE AND METHOD OF MAKING THE SAME
A Josephson junction (JJ) device is provided. The JJ device comprises an operating JJ, a first hydrogen-trapping JJ having a first end coupled to a first end of the operating JJ and a second end coupled to a first superconductor wire, and a second hydrogen-trapping JJ having a first end coupled to a second end of the operating JJ and a second end coupled to a second superconductor wire. The first hydrogen-trapping JJ and the second hydrogen-trapping JJ mitigates hydrogen diffusion into the operating JJ.
H01L 39/22 - Dispositifs comportant une jonction de matériaux différents, p.ex. dispositifs à effet Josephson
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit
H01L 39/02 - Dispositifs utilisant la supraconductivité ou l'hyperconductivité; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
38.
Magnetic flux mitigation in superconducting circuits
One example includes a superconducting circuit. The circuit superconducting circuitry fabricated on a first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit also includes a metal layer formed on a second surface of the circuit layer opposite the first surface and a through-substrate via (TSV) conductively coupled to the metal layer and extending through the circuit layer to the first surface. The circuit further includes a flux gasket conductively coupled to and extending from the TSV on the first surface proximal to the superconducting circuitry. The flux gasket can be configured to divert magnetic fields away from the superconducting circuitry.
A method of forming a multi-chip system is disclosed. The method includes forming one or more bumps on respective conductive contact pads of a first electronic device, forming one or more mini-bumps on respective conductive contact pads of a second electronic device, and aligning respective one or more mini-bumps with respective one or more bumps. The method further includes performing a bump bonding process that exerts compression force on one or both the first electronic device and the second electronic device to compress the one or more mini-bumps into the one or more bumps to form one or more bump bond structures that bond the second electronic device to the first electronic device.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
One example includes a quantum lidar system. The system includes a beam generator configured to generate a signal beam and an idler beam and a beam combiner configured to generate a combined optical beam comprising the signal beam and the idler beam. The system also includes a lidar transmitter configured to transmit the combined optical beam to a target and a lidar receiver configured to receive the combined optical beam and a reflected beam of the combined optical beam reflected from the target to generate lidar data associated with the target.
G01S 7/4911 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails des systèmes non pulsés Émetteurs
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
One example includes a superconducting circuit. The circuit superconducting circuitry fabricated on a first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit also includes a metal layer formed on a second surface of the circuit layer opposite the first surface and a through-substrate via (TSV) conductively coupled to the metal layer and extending through the circuit layer to the first surface. The circuit further includes a flux gasket conductively coupled to and extending from the TSV on the first surface proximal to the superconducting circuitry. The flux gasket can be configured to divert magnetic fields away from the superconducting circuitry.
H10N 69/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément supraconducteur couvert par le groupe
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A method of forming a multi-chip system is disclosed. The method includes forming one or more bumps on respective conductive contact pads of a first electronic device, forming one or more mini-bumps on respective conductive contact pads of a second electronic device, and aligning respective one or more mini-bumps with respective one or more bumps. The method further includes performing a bump bonding process that exerts compression force on one or both the first electronic device and the second electronic device to compress the one or more mini-bumps into the one or more bumps to form one or more bump bond structures that bond the second electronic device to the first electronic device.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
43.
SPACECRAFT SERVICING DEVICES AND RELATED ASSEMBLIES, SYSTEMS, AND METHODS
Spacecraft servicing devices and related methods may include a propellant tank configured to store a propellant and to be placed into fluid communication with a portion of the target spacecraft.
One example includes an underwater docking system. The system includes an underwater dock that includes a docking rod. The docking rod includes electrical contacts around a periphery of the docking rod. The system also includes a docking assembly mounted on an underwater vehicle. The docking assembly includes an actuator and a hook assembly that includes a docking arm and a jaw assembly. The docking arm physically guides the docking rod into the jaw assembly and the actuator closes the jaw assembly around the docking rod to provide electrical connection of brush contacts of the jaw assembly with the electrical contacts of the docking rod to provide electrical power from a power source via the electrical contacts to the underwater vehicle. Each of the electrical contacts and the brush contacts can be formed from a self-passivating material.
Pulse-generator-based reciprocal quantum logic (RQL) bias-level sensors are fabricated on an RQL integrated circuit (IC) to sample AC or DC bias values provided to operational RQL circuitry on the RQL IC. The bias-level sensors include pulse generators having strengthened or weakened bias taps (transformer couplings to RQL AC clock resonators or DC bias lines) as compared to bias taps of Josephson transmission lines in the operational RQL circuitry, or Josephson junctions (JJs) with larger or smaller critical currents as compared to JJs in the operational RQL circuitry. Pulse generators with weakened bias taps or larger JJs can have lower limits of their operational ranges placed near an optimal bias point at the centroid of the operating region of the operational RQL circuitry. The bias-level sensors can be staged by relative strength to indicate whether a provided bias value is an improvement when varied over a range.
H03K 19/195 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs supraconducteurs
H03K 3/38 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation, comme éléments actifs, de dispositifs supraconducteurs
H03K 19/17736 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants disposés sous forme matricielle - Détails structurels des ressources de routage
H03K 19/20 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion caractérisés par la fonction logique, p.ex. circuits ET, OU, NI, NON
Reciprocal quantum logic (RQL) bias-level sensors are fabricated on an RQL integrated circuit (IC) to sample AC or DC bias values provided to operational RQL circuitry on the RQL IC. The bias-level sensors, or samplers, include Josephson transmission lines (JTLs) or logic gates having strengthened or weakened bias taps as compared to bias taps of JTLs or logic gates in the operational RQL circuitry. Sampler JTLs or logic gates with weakened bias taps to AC clock resonators can have lower limits of their operational ranges placed near an optimal bias point at the centroid of the operating region of the operational RQL circuitry. Staging relative strengths of the bias taps of the samplers in an ensemble of samplers allows for outputs of wrapper circuitry to be indicative of whether a provided bias value is an improvement or optimization of the bias value when varied over a range.
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit
H01L 39/22 - Dispositifs comportant une jonction de matériaux différents, p.ex. dispositifs à effet Josephson
47.
SQUID STACK PULSE HEIGHT BIAS-LEVEL SENSOR FOR RECIPROCAL QUANTUM LOGIC
An output-amplifier-based reciprocal quantum logic (RQL) bias-level sensor is used to measure and/or calibrate bias parameters of AC and/or DC bias signals provided to RQL circuitry. The bias signals can include an output amplifier output bias current. The bias-level sensor includes a stack of DC SQUIDs that are supplied their inputs from outputs of respective Josephson transmission lines (JTLs) to which the SQUIDs are transformer-coupled. Staging relative strengths of the bias taps of the JTLs, or the critical currents of the Josephson junctions in the DC SQUIDs, allows an output voltage signal of the bias-level sensor to be indicative of whether a provided bias value is an improvement or optimization of the bias value when varied over a range. The outputs of two such bias-level sensors driven by I and Q clocks can be compared to adjust AC bias amplitudes of the clocks. Relative clock phase can be similarly adjusted.
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit
G01R 33/035 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs supraconducteurs
Reciprocal quantum logic (RQL) bias-level sensors are fabricated on an RQL integrated circuit (IC) to sample AC or DC bias values provided to operational RQL circuitry on the RQL IC. The bias-level sensors, or samplers, include Josephson transmission lines (JTLs) or logic gates having strengthened or weakened bias taps as compared to bias taps of JTLs or logic gates in the operational RQL circuitry. Sampler JTLs or logic gates with weakened bias taps to AC clock resonators can have lower limits of their operational ranges placed near an optimal bias point at the centroid of the operating region of the operational RQL circuitry. Staging relative strengths of the bias taps of the samplers in an ensemble of samplers allows for outputs of wrapper circuitry to be indicative of whether a provided bias value is an improvement or optimization of the bias value when varied over a range.
H03K 19/195 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs supraconducteurs
G11C 11/44 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des éléments supraconducteurs, p.ex. des cryotrons
G06N 10/00 - Informatique quantique, c. à d. traitement de l’information fondé sur des phénomènes de mécanique quantique
49.
SYSTEM AND METHOD FOR MULTI-PATH MESH NETWORK COMMUNICATIONS
The disclosed invention provides system and method for multi-path mesh network communications. The network system utilizes multiple communication paths and linearly encoded and disassembled packets through mathematical coding techniques that respectively travel the communication paths. The system includes an encoder, a transmitter, a decoder and a receiver. The encoder receives data from an external source and linearly encodes and simultaneously disassembles the data to generate copackets. None of the individual copackets contain decodable information of the data. The transmitter is coupled to the multiple communication paths and respectively transmits the copackets through different communication paths. The receiver receives the copackets transmitted through the communication paths. The decoder decodes available copackets and reassembles the data from the available copackets if a number of the available copackets are no less than a mathematically calculated number. The reassembled data has the complete information of the data originally transmitted.
H03M 13/15 - Codes cycliques, c. à d. décalages cycliques de mots de code produisant d'autres mots de code, p.ex. codes définis par un générateur polynomial, codes de Bose-Chaudhuri-Hocquenghen [BCH]
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H04L 69/326 - Protocoles de communication intra-couche entre entités paires ou définitions d'unité de données de protocole [PDU] dans la couche transport [couche OSI 4]
Shift register elements of a phase-mode bit-addressable sensing register sample varied AC or DC bias values provided to operational RQL circuitry on the RQL IC via clock resonators or DC bias lines. The shift register can be constructed of phase-mode D flip-flops and JTLs as data and clock lines. A method of using the sensing register includes shifting in a data bit pattern while a bias parameter (e.g., AC amplitude, DC value, or phase) is set to a nominal value; stopping the logical clock that controls the shifting of values through the sensing register, varying the bias parameter value, inputting one assertion SFQ pulse or reciprocal pulse pair into the logical clock, restoring the bias parameter to the nominal value, restarting the logical clock to shift out an output data bit pattern, and observing the output data bit pattern to determine the effect of the bias parameter value change.
G11C 19/32 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage utilisant des éléments supraconducteurs
H03L 7/081 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase avec un déphaseur commandé additionnel
H03K 19/195 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs supraconducteurs
H03L 7/08 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase
H03K 3/38 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation, comme éléments actifs, de dispositifs supraconducteurs
One example includes an atomic optical reference system. The system includes an optical system comprising a laser configured to generate an optical beam. The system also includes a vapor cell comprising alkali metal atoms that are stimulated in response to a modulated beam corresponding to an amplitude-modulated version of the optical beam. The system also includes a detection system configured to monitor at least one detection signal corresponding to light emitted from or absorbed by the vapor cell and to generate at least one feedback signal in response to the at least one detection signal. The system further includes a beam modulator configured to amplitude-modulate the optical beam to generate the modulated beam and to frequency shift the optical beam to generate an output beam having a stable frequency in response to the at least one feedback signal.
H03L 7/26 - Commande automatique de fréquence ou de phase; Synchronisation utilisant comme référence de fréquence les niveaux d'énergie de molécules, d'atomes ou de particules subatomiques
H01S 1/06 - Masers, c. à d. dispositifs utilisant l’émission stimulée de rayonnement électromagnétique dans la gamme des micro-ondes gazeux
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p.ex. en agissant sur le milieu actif
One example includes a vapor cell. The cell includes a transparent enclosure and alkali metal atoms enclosed within the transparent enclosure. The alkali metal atoms can be configured to be stimulated from a first energy state to a second energy state in response to an optical beam provided through the vapor cell and to emit fluorescent light in response to energy of the alkali metal atoms decaying from the second energy state to the first energy state. The cell further includes a reflective coating that is provided on an exterior surface of the transparent enclosure to surround the vapor cell to provide a reflective interior surface with respect to the transparent enclosure of the vapor cell to reflect the fluorescent light. The reflective coating can include a detection window configured to facilitate escape of the fluorescent light from the vapor cell for optical detection.
G01N 21/03 - Dispositions ou appareils pour faciliter la recherche optique - Détails de structure des cuvettes
G01N 21/31 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique
A multilayered metal nanowire array including a plurality of stacked and separated nanowire array layers each including a plurality of vertically aligned metal nanowires, and a lateral interposer positioned in a gap between each pair of adjacent nanowire array layers and being thermally coupled to the nanowires in the adjacent layers so that the lateral interposers provide thermal conduction between the nanowire array layers and laterally across each nanowire array layer. The nanowire array layers between the interposers can have the same or different thicknesses, the diameter and density of the nanowires can be the same or different, and the nanowire metal can be the same or different.
B23K 20/02 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p.ex. revêtement ou placage au moyen d'une presse
H05B 3/34 - Eléments chauffants ayant une surface s'étendant essentiellement dans deux dimensions, p.ex. plaques chauffantes flexibles, p.ex. grillages ou tissus chauffants
B32B 5/02 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments
B32B 5/12 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments caractérisés par la disposition relative des fibres ou filaments des couches adjacentes
B32B 5/26 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses une des couches étant fibreuse ou filamenteuse un autre couche également étant fibreuse ou filamenteuse
C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
In the described examples, a compiled image scaler includes a set of machine executable instructions that generate a scaled image that is a scaled version of a source image with integer and bitwise operations. The compiled image scaler employs filtering to blend colors of adjacent pixels in the source image to generate the scaled image, and each filtering operation concurrently scales three color channels of a pixel in the source image.
12 - Véhicules; appareils de locomotion par terre, par air ou par eau; parties de véhicules
Produits et services
space vehicles; rockets in the nature of rocket engines for launch vehicles for use in space launches and propulsion; space vehicles for transporting, launching, and propelling payloads into space; Apparatus for locomotion by air and space, namely, space launch platforms for serving spacecrafts and conducting space applications; launch vehicle systems comprised of space vehicles, rockets, and aerospace engines
One example includes an atomic optical reference system. The system includes an optical system comprising a laser configured to generate an optical beam. The system also includes a vapor cell comprising alkali metal atoms that are stimulated in response to a modulated beam corresponding to an amplitude-modulated version of the optical beam. The system also includes a detection system configured to monitor at least one detection signal corresponding to light emitted from or absorbed by the vapor cell and to generate at least one feedback signal in response to the at least one detection signal. The system further includes a beam modulator configured to amplitude-modulate the optical beam to generate the modulated beam and to frequency shift the optical beam to generate an output beam having a stable frequency in response to the at least one feedback signal.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G05D 25/02 - Commande de la lumière, p.ex. intensité, couleur ou phase caractérisée par l'utilisation de moyens électriques
H03L 7/26 - Commande automatique de fréquence ou de phase; Synchronisation utilisant comme référence de fréquence les niveaux d'énergie de molécules, d'atomes ou de particules subatomiques
G04F 5/14 - Appareils pour la production d'intervalles de temps prédéterminés, utilisés comme étalons utilisant des horloges atomiques
57.
RECONFIGURABLE SOLAR ARRAY FOR STABLE OUTPUT VOLTAGE OVER A RANGE OF TEMPERATURES WITH HIGH OPERATIONAL EFFICIENCY
A reconfigurable solar array has a plurality of photovoltaic cells and an interconnect circuit including a plurality of switches for interconnecting the photovoltaic cells. A thermostatic feedback control circuit in communication with a temperature sensor is configured to produce a temperature signal that is proportional to a temperature of the photovoltaic cells. The thermostatic feedback control circuit is configured to cause at least one of the switches to change state at a preset temperature that is independent of supply voltage. When the temperature is above the preset temperature, the photovoltaic cells are arranged in a plurality of strings connected in parallel. When the temperature is at or below the preset temperature, at least one photovoltaic cell in each string is disconnected from a respective string and reconnected in series to each other to form a new string connected in parallel to the other strings.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0392 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins comprenant des films minces déposés sur des substrats métalliques ou isolants
58.
RECONFIGURABLE SOLAR ARRAY FOR STABLE OUTPUT VOLTAGE OVER A RANGE OF TEMPERATURES WITH HIGH OPERATIONAL EFFICIENCY
A reconfigurable solar array has a plurality of photovoltaic cells and an interconnect circuit including a plurality of switches for interconnecting the photovoltaic cells. A thermostatic feedback control circuit in communication with a temperature sensor is configured to produce a temperature signal that is proportional to a temperature of the photovoltaic cells. The thermostatic feedback control circuit is configured to cause at least one of the switches to change state at a preset temperature that is independent of supply voltage. When the temperature is above the preset temperature, the photovoltaic cells are arranged in a plurality of strings connected in parallel. When the temperature is at or below the preset temperature, at least one photovoltaic cell in each string is disconnected from a respective string and reconnected in series to each other to form a new string connected in parallel to the other strings.
H02J 13/00 - Circuits pour pourvoir à l'indication à distance des conditions d'un réseau, p.ex. un enregistrement instantané des conditions d'ouverture ou de fermeture de chaque sectionneur du réseau; Circuits pour pourvoir à la commande à distance des moyens de commutation dans un réseau de distribution d'énergie, p.ex. mise en ou hors circuit de consommateurs de courant par l'utilisation de signaux d'impulsion codés transmis par le réseau
H02S 50/00 - Surveillance ou tests de systèmes PV, p.ex. équilibrage de charge ou identification des défauts
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H02S 40/36 - Composants électriques caractérisés par des moyens d'interconnexions électriques spéciaux entre plusieurs modules PV, p.ex. connexion électrique module à module
59.
Temperature compensated current source for cryogenic electronic testing
This disclosure relates to systems and methods for current source temperature compensation for use during cryogenic electronic testing. A temperature compensation circuit can provide a temperature compensation signal to a current source circuit configured to provide an electrical current for testing a cryogenic device under test to compensate for temperature effects on the current source circuit based on a time constant adjustment signal. The time constant adjustment signal can adjust a time constant of the temperature compensation circuit to delay by a given amount of time that the temperature compensation circuit compensates for the temperature effects on the current source circuit. A controller can be configured to execute a temperature compensation method to provide the time constant adjustment signal based on at least one temperature signal characterizing a temperature of an environment that includes the current source circuit or a temperature of the current source circuit.
G01K 3/00 - Thermomètres donnant une indication autre que la valeur instantanée de la température
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
G01R 31/28 - Test de circuits électroniques, p.ex. à l'aide d'un traceur de signaux
One example includes a radar image interface system. The system includes an image processor configured to receive synthetic aperture radar (SAR) image data associated with a region of interest and to generate a radar image of the region of interest based on the SAR image data. The image processor can be further configured to divide the radar image into a plurality of sequential units corresponding to respective zones of the region of interest. The system also includes a display system configured to display zoomed sequential units corresponding to respective zoomed versions of the sequential units of the radar image to a user. The system further includes an input interface configured to facilitate sequentially indexing through each of the zoomed versions of the sequential units on the display system in response to an indexing input provided by the user.
G01S 13/90 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour la cartographie ou la représentation utilisant des techniques d'antenne synthétique
G01S 7/41 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant l'analyse du signal d'écho pour la caractérisation de la cible; Signature de cible; Surface équivalente de cible
A semiconductor device is provided with a first layer having a first layer conductive contact and being doped at a first concentration of a first dopant type. The first dopant type being a P type dopant. A second layer is on top the first layer and being doped at a second concentration of the first dopant type. The second concentration being less than the first concentration. A third layer is on top of the second layer and having a third layer conductive contact and being doped with a second dopant type, the second dopant type being an N type dopant. A fourth layer is on top of the third layer and having a fourth layer conductive contact and being doped with the first dopant type, wherein at least one of the first and second layers is a boron arsenide (BAs) layer.
A field effect transistor, comprising: a substrate and a superlattice of stacked conducting channels on the substrate; a source and a drain spaced-apart from each other on the superlattice; alternating castellations and trenches formed in the superlattice between the source and the drain, wherein the castellations have sidewalls that cut-down through the superlattice to form the trenches and edges of the stacked conducting channels that terminate at the sidewalls; a fringe field dielectric that fills lower volumes of the trenches up to a height on the sidewalls that is higher than first edges of first conducting channels among the stacked conducting channels, such that the fringe field dielectric is adjacent to the first edges; and a gate electrode overlaying the fringe field dielectric and the castellations such that the gate electrode is not adjacent to the first edges.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
One example includes a power supply system. The system includes a voltage-limit power regulator to generate an output voltage and an instantaneous overvoltage sensor configured to detect an overvoltage condition associated with the output voltage. The system further includes an overvoltage latch-off timer system configured to initiate a latch-off timer in response to detecting the overvoltage condition. The latch-off timer can be uninterrupted by an amplitude of the output voltage. The overvoltage latch-off timer system can further be configured to detect a persistent overvoltage fault in response to detecting the overvoltage condition after expiration of the latch-off timer. The overvoltage latch-off timer system can be configured to generate a fault signal to disable the voltage-limit power regulator in response to detecting the persistent overvoltage fault.
H02H 3/20 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à un excès de tension
H02H 1/00 - CIRCUITS DE PROTECTION DE SÉCURITÉ - Détails de circuits de protection de sécurité
65.
THREE-DIMENSIONAL HYPERSPECTRAL IMAGING SYSTEMS AND METHODS USING A LIGHT DETECTION AND RANGING (LIDAR) FOCAL PLANE ARRAY
A system having an illumination source configured to illuminate a target object using broadband laser light. A dispersive element is configured to spectrally separate light received from the target object into different colors A focal plane array (FPA) is configured to: (1) receive the light from the dispersive element; (2) acquire spatial information regarding the target object in one dimension in the plane of the FPA; acquire spectral information in a second dimension in the plane of the FPA, wherein the second dimension is perpendicular to the first dimension; (4) obtain information regarding a distance from the FPA to the target object by obtaining different times of flight of at least two wavelengths; and (5) detect a single photon of light, thereby hyperspectrally imaging the target object in three dimensions.
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
G01S 17/42 - Mesure simultanée de la distance et d'autres coordonnées
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01J 3/02 - Spectrométrie; Spectrophotométrie; Monochromateurs; Mesure de la couleur - Parties constitutives
One example includes a power supply system. The system includes a voltage-limit power regulator to generate an output voltage and an instantaneous overvoltage sensor configured to detect an overvoltage condition associated with the output voltage. The system further includes an overvoltage latch-off timer system configured to initiate a latch-off timer in response to detecting the overvoltage condition. The latch-off timer can be uninterrupted by an amplitude of the output voltage. The overvoltage latch-off timer system can further be configured to detect a persistent overvoltage fault in response to detecting the overvoltage condition after expiration of the latch-off timer. The overvoltage latch-off timer system can be configured to generate a fault signal to disable the voltage-limit power regulator in response to detecting the persistent overvoltage fault.
H02H 3/027 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion - Détails avec déconnexion automatique après une durée prédéterminée
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
H02M 1/36 - Moyens pour mettre en marche ou arrêter les convertisseurs
H02H 7/12 - Circuits de protection de sécurité spécialement adaptés pour des machines ou appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou ligne, et effectuant une commutation automatique dans le cas d'un chan pour redresseurs pour convertisseurs ou redresseurs statiques
One example includes an acoustic resonator filter system. The system includes a plurality of filter blocks. Each of the filter blocks can include a plurality of tunable filter elements. Each of the tunable filter elements can include an acoustic resonator. The system also includes a switching network that receives a radio frequency (RF) input signal and provides a filtered RF output signal. The switching network can be configured to selectively switch at least one of the filter blocks in a signal path of the RF input signal to provide the RF output signal.
One example includes an acoustic resonator filter bank system. The system includes a multiplex passive filter that is configured to provide a plurality of filtered versions of a radio frequency (RF) input signal. The system also includes a filter bank that comprises a plurality of filter blocks that are each configured to provide a plurality of pass-bands across a frequency spectrum. Each of the filter blocks includes an acoustic resonator. The system further includes a switch matrix that is configured to provide one of the filtered versions of the RF input signal to one of the filter blocks in the filter bank to provide an RF output signal having a frequency band corresponding to a respective one of the pass-bands.
One example includes an acoustic resonator filter bank system. The system includes a multiplex passive filter that is configured to provide a plurality of filtered versions of a radio frequency (RF) input signal. The system also includes a filter bank that comprises a plurality of filter blocks that are each configured to provide a plurality of pass-bands across a frequency spectrum. Each of the filter blocks includes an acoustic resonator. The system further includes a switch matrix that is configured to provide one of the filtered versions of the RF input signal to one of the filter blocks in the filter bank to provide an RF output signal having a frequency band corresponding to a respective one of the pass-bands.
One example includes an acoustic resonator filter system. The system includes a filter element arranged between a low-voltage rail and a filter-path node through which an RF input signal propagates to provide a filtered RF output signal. The filter element includes an acoustic resonator and a capacitive network arranged in parallel with the acoustic resonator.
One example includes an acoustic resonator filter system. The system includes a plurality of filter blocks. Each of the filter blocks can include a plurality of tunable filter elements. Each of the tunable filter elements can include an acoustic resonator. The system also includes a switching network that receives a radio frequency (RF) input signal and provides a filtered RF output signal. The switching network can be configured to selectively switch at least one of the filter blocks in a signal path of the RF input signal to provide the RF output signal.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
A system for detecting threats using an overt threat detector, the system includes a computer-readable memory configured to store computer executable instructions; a processor configured to execute the computer executable instructions, the computer executable instructions comprising receiving historical data regarding vessel patterns in a geographic area; generating, using a computer processor, at least one overt threat model based on the received historical data; receiving tracking data of vessels currently in the geographic area; analyzing, using the computer processor, the tracking data of vessels using the at least one overt threat model; and modifying, using the computer processor, the tracking data of vessels based on the results of the analyzing step; and an output device configured to output the modified tracking data of vessels is disclosed.
A precursor composition comprising, before curing, ethylene propylene diene monomer (EPDM), an aramid, and a carbon material comprising carbon nanotubes, graphite, or a combination thereof. A rocket motor including a reaction product of the precursor composition and a method of insulating a rocket motor are also disclosed.
C08L 77/10 - Polyamides dérivés de groupes amino et carboxyle liés aromatiquement soit d'acides aminocarboxyliques, soit de polyamines et d'acides polycarboxyliques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
telecommunication services, namely, transmission of digital information, providing access to computerized communication networks; computer communication services; satellite transmission and communication services; radio and wireless transmission of digital information; network communication services connecting sensors and communications devices with analysis and decision-making devices in a networked environment across space, air, land, sea, and cyber domains (joint all-domain command and control) engineering and computer technology services directed to designing, developing and integrating sensors, digital information, communications devices, military hardware, and analysis and decision-making devices in a computerized communication network across space, air, land, sea, and cyber domains (joint all-domain command and control); design of computer software, software-as-a-service (SaaS), and systems for network communication across space, air, land, sea, and cyber domains (joint all-domain command and control); software and computer services directed to developing and deploying artificial intelligence in a networked environment across space, air, land, sea, and cyber domains (joint all-domain command and control)
A method of transmitting data from a transmitting terminal to a receiving terminal over a channel is provided in which a series of locations for each of the receiving terminals is determined. The method further includes the steps of determining a link geometry of the channel between the transmitting terminal and the receiving terminal for each location in the series of locations, wherein determining the link geometry comprises determining a distance between the transmitting and receiving terminals for each location in the series of locations; determining channel impairments for the link geometries; predicting signal-to-noise ratios (SNRs) of the channel for the link geometries and the channel impairments; storing channel parameters based on the predicted SNRs in a lookup table; retrieving the channel parameters from the lookup table using the distance between the transmitting and receiving terminals; and transmitting data from the transmitting terminal using the channel parameters.
Spacecraft servicing systems include a spacecraft servicing device and at least one mission extension pod comprising at least one spacecraft servicing component. The spacecraft servicing device is configured to transfer the at least pod to a target spacecraft in order to service the target spacecraft with the at least one spacecraft servicing component of the at least one pod. Spacecraft servicing pods configured to be supplied to a spacecraft with a spacecraft servicing device include at least one spacecraft servicing component.
One example includes an optical element. The optical element includes a first optical material structure comprising a first index of refraction across a frequency spectrum. The optical element also includes a second optical material structure configured to exhibit an index anomaly corresponding to a change in index of refraction from the first index of refraction to a second index of refraction across a portion of the frequency spectrum and a change from the second index of refraction to the first index of refraction along the frequency spectrum. The optical element further includes a diffractive interface corresponding to a non-planar material contact junction between the first optical material structure and the second optical material structure. The diffractive interface can be configured to manipulate in a predetermined manner an optical beam having an optical path through the diffractive interface and having a frequency in the portion of the frequency spectrum.
One example includes an optical element. The optical element includes a first optical material structure comprising a first index of refraction across a frequency spectrum. The optical element also includes a second optical material structure configured to exhibit an index anomaly corresponding to a change in index of refraction from the first index of refraction to a second index of refraction across a portion of the frequency spectrum and a change from the second index of refraction to the first index of refraction along the frequency spectrum. The optical element further includes a diffractive interface corresponding to a non-planar material contact junction between the first optical material structure and the second optical material structure. The diffractive interface can be configured to manipulate in a predetermined manner an optical beam having an optical path through the diffractive interface and having a frequency in the portion of the frequency spectrum.
The present disclosure relates to an evaluation of system-of-systems (SoS) architectures for cyber vulnerabilities. In an example, architecture description data and component description data for an SoS can be received. Architecture definition file (ADF) data can be generated based on the architecture and component description data. A model of a target SoS architecture for the SoS can be generated based on the ADF data. The target SoS architecture for the SoS can be evaluated to identify potential cyber-attack vectors with respect to the target SoS architecture, and a probabilistic analysis of the potential cyber-attack vectors can be executed to compute a probability for each cyber-attack vector indicative of a likelihood that a respective cyber-attack results in a mission failure by the SoS based on the target SoS architecture. Display data can be generated for visualization on an output device that includes each identified potential cyberattack vector and associated computed probability.
In an example, a component analyzer can compute a respective part score for each part of the platform based on a part property table, and a respective connection score for each connection of the platform based on a connection property table. The component analyzer can provide the respective part and connection scores as score data to an architecture modeling engine to compute a probability model based on the score data and an architecture model. The probability model can include a part probability value and a connection probability value, and the architecture model can characterize a target architecture of the platform. A survivability analysis engine can evaluate the probability model and the architecture model to determine a likelihood that one or more potential cyber-attacks on the platform based on the target architecture are successful or unsuccessful in compromising at least one part of the platform.
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
81.
Systems and methods for inter-partition communication
In an example, a method can include determining, at a first inter-partition messenger, a message type for a message generated by a first application. The first inter-partition messenger and the first application can reside on a first virtual machine. The method can include identifying, at the first inter-partition messenger, a second application that is to receive the message based on the message type and message subscription data, generating, at the first inter-partition messenger, message routing data for routing of the message from the first virtual machine to the second virtual machine, causing, at the first inter-partition messenger, the message to be routed from the first virtual machine to the second virtual machine based on the message routing data, and receiving, at the second inter-partition messenger, the message for use thereof by the second application. The second inter-partition messenger and the second application can reside on the second virtual machine.
G06F 9/455 - Dispositions pour exécuter des programmes spécifiques Émulation; Interprétation; Simulation de logiciel, p.ex. virtualisation ou émulation des moteurs d’exécution d’applications ou de systèmes d’exploitation
G06F 9/50 - Allocation de ressources, p.ex. de l'unité centrale de traitement [UCT]
82.
FLUX-TRAPPING MAGNETIC FILMS IN SUPERCONDUCTING CIRCUITS
One example includes a superconducting circuit. The circuit includes superconducting circuitry fabricated in a circuit layer. The circuit layer includes a first surface and a second surface opposite the first surface. The circuit also includes a flux moat comprising a dielectric material formed in the circuit layer. The flux moat can be configured to trap a magnetic flux as the superconducting circuit is cooled to below a superconducting critical temperature. The circuit further includes a magnetic film arranged proximal to the flux moat on at least one of the first and second surfaces of the circuit layer. The magnetic film can be configured to guide the magnetic flux to the flux moat as the superconducting circuit is cooled to below the superconducting critical temperature.
H01B 12/06 - Conducteurs, câbles ou lignes de transmission supraconducteurs ou hyperconducteurs caractérisés par leurs formes à couches ou fils déposés sur des supports ou des noyaux
H01B 12/16 - Conducteurs, câbles ou lignes de transmission supraconducteurs ou hyperconducteurs caractérisés par le refroidissement
H01F 10/16 - Métaux ou alliages contenant du cobalt
H01F 10/14 - Métaux ou alliages contenant du fer ou du nickel
A key updater for a first party operating on a network generates a mutually distilled key for communication between the first party and a second party. The key updater determines a set of verifying parties operating on the network needed to authenticate the mutually distilled key, wherein each verifying party of the set of verifying parties operates on the network. The key updater iteratively executes a key equivalency test for each verifying party in the set of verifying parties to determine a nonce sum until the key equivalency test has been executed for each of the verifying parties in the set of verifying parties or until it is determined that at least one node on the network has been compromised. The key updater generates a final key for communication between the first party and the second party based on the nonce sum and the mutually distilled key.
H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
84.
SYSTEMS AND METHODS FOR EVALUATING SYSTEM-OF-SYSTEMS FOR CYBER VULNERABILITIES
The present disclosure relates to an evaluation of system-of-systems (SoS) architectures for cyber vulnerabilities. In an example, architecture description data and component description data for an SoS can be received. Architecture definition file (ADF) data can be generated based on the architecture and component description data. A model of a target SoS architecture for the SoS can be generated based on the ADF data. The target SoS architecture for the SoS can be evaluated to identify potential cyber-attack vectors with respect to the target SoS architecture, and a probabilistic analysis of the potential cyber-attack vectors can be executed to compute a probability for each cyber-attack vector indicative of a likelihood that a respective cyber-attack results in a mission failure by the SoS based on the target SoS architecture. Display data can be generated for visualization on an output device that includes each identified potential cyber-attack vector and associated computed probability.
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
85.
SYSTEMS AND METHODS FOR PLATFORM CYBER VULNERABILITY EVALUATION
In an example, a component analyzer can compute a respective part score for each part of the platform based on a part property table, and a respective connection score for each connection of the platform based on a connection property table. The component analyzer can provide the respective part and connection scores as score data to an architecture modeling engine to compute a probability model based on the score data and an architecture model. The probability model can include a part probability value and a connection probability value, and the architecture model can characterize a target architecture of the platform. A survivability analysis engine can evaluate the probability model and the architecture model to determine a likelihood that one or more potential cyber-attacks on the platform based on the target architecture are successful or unsuccessful in compromising at least one part of the platform.
H04L 41/12 - Découverte ou gestion des topologies de réseau
H04L 41/16 - Dispositions pour la maintenance, l’administration ou la gestion des réseaux de commutation de données, p.ex. des réseaux de commutation de paquets en utilisant l'apprentissage automatique ou l'intelligence artificielle
86.
FLUX-TRAPPING MAGNETIC FILMS IN SUPERCONDUCTING CIRCUITS
One example includes a superconducting circuit. The circuit includes superconducting circuitry fabricated in a circuit layer. The circuit layer includes a first surface and a second surface opposite the first surface. The circuit also includes a flux moat comprising a dielectric material formed in the circuit layer. The flux moat can be configured to trap a magnetic flux as the superconducting circuit is cooled to below a superconducting critical temperature. The circuit further includes a magnetic film arranged proximal to the flux moat on at least one of the first and second surfaces of the circuit layer. The magnetic film can be configured to guide the magnetic flux to the flux moat as the superconducting circuit is cooled to below the superconducting critical temperature.
The present disclosure is directed toward systems and methods for fingerprinting wireless communications using few-shot learning techniques. The systems and methods relate to storing fingerprint data indicating device fingerprint features detected for a plurality of identified transmitting devices in a database. The methods further relate to receiving, at a communication device, wireless communications from an unidentified transmitting device. Additionally, the systems and methods illustrate determining a device fingerprint responsive to a portion of each of the wireless communications using few-shot learning techniques and comparing the determined device fingerprint to the stored fingerprint data in the database.
G06F 21/32 - Authentification de l’utilisateur par données biométriques, p.ex. empreintes digitales, balayages de l’iris ou empreintes vocales
G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p.ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersections; Analyse de connectivité, p.ex. de composantes connectées
A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficent than the first superconductor material and/or the second superconductor material has a lower recombination coefficent than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.
H10N 69/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément supraconducteur couvert par le groupe
F25B 21/00 - Machines, installations ou systèmes utilisant des effets électriques ou magnétiques
89.
AUTOMATED METHODS FOR MANUFACTURING SHEETS OF COMPOSITE MATERIAL AND COMPOSITE STRUCTURES, PATTERN PREPARATION AND FORMING SYSTEMS, AND SHEETS OF COMPOSITE MATERIAL
Automated methods of forming composite structures (52) may include applying fibers (26) having various predetermined lengths to a removable backing material (50) to form a net shape or near net shape pattern for forming a composite structure having a varying transverse cross-section. Sheets of composite material may comprise strips (26) of composite material adhered to a backing material (50) in a net shape or near net shape pattern for forming a composite structure with a varying transverse cross-section. Further methods of manufacturing sheets of composite material may comprise applying fibers having various predetermined lengths to a removable backing material in a net shape or near net shape pattern for forming a composite structure having a varying transverse cross-section. Pattern preparation systems may include a material placement device (10) programmed and configured to apply fibers having various predetermined lengths to a removable backing material. Forming systems may include an indicia locating device.
B29C 70/38 - Empilage automatisé, p.ex. utilisant des robots, par application de filaments selon des modèles prédéterminés
B29B 11/16 - Fabrication de préformes caractérisées par la structure ou la composition comprenant des charges ou des agents de renforcement
90.
AUTOMATED METHODS FOR MANUFACTURING SHEETS OF COMPOSITE MATERIAL AND COMPOSITE STRUCTURES, PATTERN PREPARATION AND FORMING SYSTEMS, AND SHEETS OF COMPOSITE MATERIAL
Automated methods of forming composite structures may include applying fibers having various predetermined lengths to a removable backing material to form a net shape or near net shape pattern for forming a composite structure having a varying transverse cross-section. Sheets of composite material may comprise strips of composite material adhered to a backing material in a net shape or near net shape pattern for forming a composite structure with a varying transverse cross-section. Further methods of manufacturing sheets of composite material may comprise applying fibers having various predetermined lengths to a removable backing material in a net shape or near net shape pattern for forming a composite structure having a varying transverse cross-section. Pattern preparation systems may include a material placement device programmed and configured to apply fibers having various predetermined lengths to a removable backing material. Forming systems may include an indicia locating device.
B29C 70/38 - Empilage automatisé, p.ex. utilisant des robots, par application de filaments selon des modèles prédéterminés
B29C 70/54 - Façonnage de matières composites, c. à d. de matières plastiques comprenant des renforcements, des matières de remplissage ou des parties préformées, p.ex. des inserts comprenant uniquement des renforcements, p.ex. matières plastiques auto-renforçantes opération de façonnage des matières composites comprenant uniquement des renforcements - Parties constitutives, détails ou accessoires; Opérations auxiliaires
A key updater for a first party operating on a network generates a mutually distilled key for communication between the first party and a second party. The key updater determines a set of verifying parties operating on the network needed to authenticate the mutually distilled key, wherein each verifying party of the set of verifying parties operates on the network. The key updater iteratively executes a key equivalency test for each verifying party in the set of verifying parties to determine a nonce sum until the key equivalency test has been executed for each of the verifying parties in the set of verifying parties or until it is determined that at least one node on the network has been compromised. The key updater generates a final key for communication between the first party and the second party based on the nonce sum and the mutually distilled key.
H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
H04L 9/14 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité utilisant plusieurs clés ou algorithmes
92.
MACHINE LEARNING FINGERPRINTING OF WIRELESS SIGNALS
Machine learning fingerprinting of wireless signals and related systems, methods, and computer-readable media are disclosed. The systems and methods relate to storing fingerprint data indicating device fingerprint features detected for a plurality of identified transmitting devices in a database. The methods further relate to receiving, at a communication device, wireless communications from an unidentified transmitting device. Additionally, the systems and methods illustrate determining a device fingerprint responsive to a portion of each of the wireless communications using few-shot learning techniques and comparing the determined device fingerprint to the stored fingerprint data in the database
H04L 67/12 - Protocoles spécialement adaptés aux environnements propriétaires ou de mise en réseau pour un usage spécial, p.ex. les réseaux médicaux, les réseaux de capteurs, les réseaux dans les véhicules ou les réseaux de mesure à distance
A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficent than the first superconductor material and/or the second superconductor material has a lower recombination coefficent than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.
H01L 35/32 - DISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS - Détails fonctionnant exclusivement par effet Peltier ou effet Seebeck caractérisés par la structure ou la configuration de la cellule ou du thermocouple constituant le dispositif
H01L 35/22 - Emploi d'un matériau spécifié pour les bras de la jonction utilisant des compositions inorganiques comprenant des composés contenant du bore, du carbone, de l'oxygène ou de l'azote
H01L 35/34 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
94.
Method of manufacturing a high-performance optical absorber using capillary force lamination
A method using capillary force lamination (CFL) for manufacturing a high-performance optical absorber, includes: texturizing a base layer of the high-performance optical absorber, the base layer comprising one or more of a polymer film and a polymer coating; joining a surface layer of the high-performance optical absorber to the base layer, the surface layer comprising a non-woven carbon nanotube (CNT) sheet; wetting the joined surface layer and base layer with a solvent; drying the joined surface layer and base layer; and treating the resulting base layer with plasma, creating the high-performance optical absorber.
Systems and methods are provided for coupling two qubits. A first persistent current qubit is fabricated with a first superconducting loop interrupted by a first Josephson junction isolated by a first inductor and a second inductor from a second Josephson junction. A second persistent current qubit is fabricated with a second superconducting loop interrupted by a third Josephson junction isolated by a third inductor and a fourth inductor from a fourth Josephson junction. Nodes defined by the Josephson junctions of the first qubit and their neighboring inductors are connected to corresponding nodes defined by the third Josephson junction and the third inductor via a first capacitor, with one pair of connections swapped such that the nodes are not connected to their respective corresponding nodes.
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p.ex. calcul quantique ou logique à un électron
96.
Channelized filter using semiconductor fabrication
A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
A data storage system including a docking station, and a dockable external data storage device operates in an underwater environment. The dockable external data storage device includes a housing, a memory disposed within the housing to store data, and a connector assembly mounted on the housing. The connector assembly includes at least one optical transmitter configured to transfer data from the memory to a corresponding optical receiver in the docking station. The connector assembly also includes a self-passivating electrical contact configured to transfer electrical power to the dockable external data storage device from a corresponding power contact in the docking station.
A data storage system including a docking station, and a dockable external data storage device operates in an underwater environment. The dockable external data storage device includes a housing, a memory disposed within the housing to store data, and a connector assembly mounted on the housing. The connector assembly includes at least one optical transmitter configured to transfer data from the memory to a corresponding optical receiver in the docking station. The connector assembly also includes a self-passivating electrical contact configured to transfer electrical power to the dockable external data storage device from a corresponding power contact in the docking station.
H01R 4/62 - Connexions entre des conducteurs constitués de matériaux différents; Connexions entre ou avec des conducteurs en aluminium avec ou sans âme en acier
H01R 33/965 - Supports protégés contre la poussière, les projections, les éclaboussures, l'eau ou les flammes
H01R 13/03 - Contacts caractérisés par le matériau, p.ex. matériaux de plaquage ou de revêtement
A method for assembling a two-dimensional fiber array launcher assembly. The method includes providing an alignment structure having a two-dimensional alignment plate with holes at one end and a two-dimensional beam shaper with micro-lenses at an opposite end. An endcap having a fiber attached thereto is systematically positioned in each hole, and is aligned with one of the micro-lenses with a high precision tolerance. The aligned endcap is then secured in the hole using a curable glue. This process is continued until all of the holes have aligned endcaps. If one of the endcaps is mis-aligned or becomes damaged, the glue can be heated and the endcap realigned or replaced.
A method for assembling a two-dimensional fiber array launcher assembly. The method includes providing an alignment structure having a two-dimensional alignment plate with holes at one end and a two-dimensional beam shaper with micro-lenses at an opposite end. An endcap having a fiber attached thereto is systematically positioned in each hole, and is aligned with one of the micro-lenses with a high precision tolerance. The aligned endcap is then secured in the hole using a curable glue. This process is continued until all of the holes have aligned endcaps. If one of the endcaps is mis-aligned or becomes damaged, the glue can be heated and the endcap realigned or replaced.