DRIVE CIRCUIT

Registre Brevet WIPO
Numéro d'application JP2020028853
Numéro de publication 2021/029218
Statut Délivré - en vigueur
Date de dépôt 2020-07-28
Date de publication 2021-02-18
Propriétaire OMRON CORPORATION (Japon)
Inventeur(s)
  • Yawata, Masaki
  • Miyahara, Chihiro

Abrégé

A drive circuit (1) is provided with: a GaN-FET (FET#1) having a source (S) that is connected to an anode of an LD (31) and a drain (D) that is connected to a power source (25) of the LD (31); a gate drive circuit (11) with which an output port (11o) and a negative-side voltage port (11n) are connected, respectively, to a gate (G) and the source (S) of the GaN-FET (FET#1), an input voltage to a positive-side voltage port (11p) being outputted from the output port (11o) during inputting of a signal of a predetermined level; a capacitor (13) that is arranged between the positive-side voltage port (11p) and a negative-side voltage port (11n) of the gate drive circuit (11); a diode (15) that is inserted, in an orientation for shutting off a current that flows from the positive-side voltage port (11p) to a VDD power source for outputting a voltage less than a Vgs breakdown voltage of the GaN-FET (FET#1), into a power source line connecting the positive-side voltage port (11p) of the gate drive circuit (11) and the VDD power source; and a semiconductor switch (FET#2) that is arranged between the source (S) of the GaN-FET (FET#1) and ground.

Classes IPC  ?

  • H01S 5/042 - Electrical excitation
  • H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes