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2020
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Invention
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Asymmetric high-k dielectric for reducing gate induced drain leakage. An asymmetric high-k dielec... |
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Invention
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Low aspect ratio interconnect.
A low aspect ratio interconnect is provided and includes a metall... |
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Invention
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Efficient metal-insulator-metal capacitor. A capacitor includes a stack. The stack has a first me... |
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Invention
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Sidewall image transfer nanosheet. A method for forming active regions of a semiconductor device ... |
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Invention
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Alternating hardmasks for tight-pitch line formation. Methods of forming fins include masking a r... |
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Invention
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Iii-v semiconductor devices with selective oxidation.
Embodiments of the present invention provi... |
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2019
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Invention
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Homogeneous densification of fill layers for controlled reveal of vertical fins. In accordance wi... |
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Invention
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Iii-v semiconductor devices with selective oxidation. Embodiments of the present invention provid... |
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Invention
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Spin transfer torque cell for magnetic random access memory. Embodiments are directed to STT MRAM... |
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Invention
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Reduction of stress in via structure.
Methods for fabricating a via structure are disclosed. In ... |
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Invention
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Reduced resistance source and drain extensions in vertical field effect transistors. Semiconducto... |
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Invention
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Low aspect ratio interconnect. A low aspect ratio interconnect is provided and includes a metalli... |
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Invention
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Uniform fin dimensions using fin cut hardmask. A semiconductor device includes a substrate, a fin... |
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2018
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Invention
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Sidewall image transfer nanosheet. Provided are embodiments of a method for forming active region... |
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Invention
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Efficient metal-insulator-metal capacitor. Capacitors include a stack that has a first metallic l... |
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Invention
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Preserving channel strain in fin cuts. A method of forming a semiconductor structure includes for... |
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Invention
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Self-aligned contact process enabled by low temperature. Self-aligned contacts of a semiconductor... |
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Invention
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Nanosheet transistors on bulk material. A semiconductor structure. The structure includes first s... |
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Invention
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Integrating and isolating nfet and pfet nanosheet transistors on a substrate. Embodiments of the ... |
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Invention
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Forming a hybrid channel nanosheet semiconductor structure. A method for fabricating a nanosheet ... |
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Invention
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Low resistance contact structures for trench structures.
An electrical device including at least... |
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Invention
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Fin type field effect transistors with different pitches and substantially uniform fin reveal. A ... |
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Invention
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Microelectronic elements with post-assembly planarization. A microelectronic unit can include a c... |
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Invention
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Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin t... |
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Invention
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Margin for fin cut using self-aligned triple patterning. A method for fabricating a semiconductor... |
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Invention
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Multi-level metallization interconnect structure. A semiconductor structure is provided that incl... |
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2017
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Invention
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Nanosheet transistors having different gate dielectric thicknesses on the same chip. Embodiments ... |
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Invention
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Finfet with uniform shallow trench isolation recess. Disclosed herein are processes and structure... |
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Invention
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Integration of thick and thin nanosheet transistors on a single chip. A method is presented for i... |
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Invention
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Self-aligned air gap spacer for nanosheet cmos devices. A semiconductor structure is provided tha... |
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Invention
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Wet etch removal of ru selective to other metals. A method for forming a conductive structure for... |
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Invention
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Efficient metal-insulator-metal capacitor fabrication. Methods of forming capacitors include form... |
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Invention
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Cobalt contact and interconnect structures. Methods and structures for forming cobalt contact and... |
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Invention
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Integration of super via structure in beol. Semiconductor devices including super via structures ... |
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Invention
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Semiconductor device formed by wet etch removal of ru selective to other metals. A method for for... |
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Invention
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Reduction of stress in via structure. A via structure for electric connection is disclosed. The v... |
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Invention
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Alternating hardmasks for tight-pitch line formation. Methods of forming fins include forming mas... |
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Invention
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Efficient metal-insulator-metal capacitor. Capacitors and methods of forming the same include for... |
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Invention
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Nanosheet transistors on bulk material. A method of forming a semiconductor device and resulting ... |
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2008
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G/S
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Integrated circuits; computer software in the field of image processing; optical lenses; printed ... |
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2006
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G/S
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Semiconductor chip packages. |
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2004
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G/S
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WHOLESALE SERVICES FEATURING HANDCRAFTED HOME ACCESSORIES AND SPECIALTY GOODS |
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1996
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G/S
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Electronic and computer components. Consulting and design services in the field of computers. |
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G/S
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Computer hardware, computer systems and sub-assemblies and related equipment, namely; semi-conduc... |
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1993
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G/S
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[ semiconductor and carrier in combination; circuit boards; circuit board layers; computer chips;... |
