Disclosed is a system for and method of performing target metrology in an extreme ultraviolet light source in which illumination for a target imaging/detection system is selected to have a center wavelength less than 400 nm. In some embodiments the illumination is additionally selected to have a line width of at least 4 nm. In some embodiments illumination is obtained as a second harmonic of a Ti:sapphire laser or as a harmonic of an Nd:YAG laser.
Methods, systems, and computer software are disclosed for determining a mask pattern for use with a lithographic process. One method includes assigning locations of two-dimensional elements based on a target pattern, associating the two-dimensional elements based on association criteria to form a cluster that represents a mask feature, and adjusting the two-dimensional elements of the cluster to vary the mask feature.
G03F 1/36 - Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
A charged particle device projects charged-particle beams along beampaths towards a sample location. The device comprises: a charged-particle lens assembly for manipulating the beams and a controller. The lens assembly comprises plates each having an aperture array for passage of beampaths. The plates are at different plate locations along the beampaths. The controller controls the charged-particle device such that charged particles of the beams have different energy values at the different plate locations along the beampaths. The lens assembly comprises a corrector comprising an individual correctors configured to perform aberration correction at respective apertures independently of each other. The corrector is associated with the plate at the plate location at which the energy value is smallest, the strength of an electric field adjacent to the plate is greatest and/or a ratio of the energy value to strength of an electric field adjacent to the plate is smallest.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
4.
METHOD OF WAFER GROUNDING UTILIZING WAFER EDGE BACKSIDE COATING EXCLUSION AREA
Systems and methods are provided for grounding a wafer (604;904) in a charged particle beam apparatus. The systems and methods include providing an exclusion area (613;911) in a backside film 608;908 on the wafer of sufficient size to allow an electrical connection between the wafer and an electrical contact (612;912) of the charged particle beam apparatus. The systems and methods may include contacting a pin body to a surface of the wafer, the wafer having a coating on the surface, and the pin body comprising a first tip and a second tip each extending from the pin body; wherein the contacting takes place at a first exclusion area of the coating by any one of the first tip, the second tip, or any combination thereof. There is also provided a method for forming a coating on a wafer surface, comprising masking a first exclusion area on the wafer surface with a first exclusion mask.
H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
5.
SETUP AND CONTROL METHODS FOR A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES
Disclosed is a method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method comprises determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Den Boef, Arie, Jeffrey
Van Schaijk, Theodorus, Thomas, Marinus
Buijs, Robin, Daniel
De Boer, Johannes Fitzgerald
Messinis, Christos
Abstract
A method for determining a vertical position of a structure on a substrate with respect to a nominal vertical position is disclosed. The method comprises obtaining complex field data relating to scattered radiation from said structure, for a plurality of different wavelengths, determining variation in a phase parameter with wavelength from said complex field data; and determining said vertical position with respect to a nominal vertical position from the determined variation in phase with wavelength.
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Van Schaijk, Theodorus, Thomas, Marinus
Ajgaonkar, Mahesh, Upendra
Den Boef, Arie, Jeffrey
De Boer, Johannes Fitzgerald
Messinis, Christos
Buijs, Robin, Daniel
Abstract
Disclosed is an illumination arrangement for providing at least one radiation beam for use as an illumination beam and/or reference beam in a metrology device. The illumination arrangement comprises at least one radiation beam modifier module operable to receive source illumination and output a modified radiation beam comprising a first beam component and a second beam component. Each radiation beam modifier module comprises at least one path length varying arrangement for controllably varying the optical path length of at least one of said first beam component and said second beam component, such that said first beam component and second beam component of said modified radiation beam comprise a respective different optical path length.
Disclosed herein is a residual gas analyser, RGA, for determining the amounts of gas components in a vacuum tool, the RGA comprising a first detector and a second detector, wherein: the first detector is configured so that the largest gas component amount that is determinable by the first detector is greater than the largest gas component amount that is determinable by the second detector; the first detector is configured so that the smallest gas component amount that is determinable by the first detector is less than or equal to the largest gas component amount that is determinable by the second detector; and the second detector is configured so that the smallest gas component amount that is determinable by the second detector is less than the smallest gas component amount that is determinable by the first detector.
Methods, software, and systems are disclosed for predicting a failure rate for a design layout. The predicting can include obtaining an image of the design layout in a lithography process. Derivatives of the image intensity at select locations in the design layout can be determined. The failure rate of the design layout can be determined based on the derivatives at the select locations.
A vacuum chamber system comprises a supporting structure configured to support an object to be thermally stabilized, a plate, having a first surface facing the object, positioned such that the first surface is located within a predetermined distance from the object when the object is placed on the supporting structure, the plate being thermally coupled to a heat conduction source, and a chamber enclosing the supporting structure and the plate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed herein is a substrate support arrangement suitable for an EUV exposure process, the substrate support arrangement comprising: a substrate support arranged to support a substrate; and a power supply arrangement configured to generate an alternating electric field in the substrate when the substrate is illuminated by a EUV radiation.
Disclosed is a method of correcting a measured spectrum for the effects of a source spectrum resulting from an illumination source. The method comprises obtaining a measured spectrum in terms of a measurement parameter, the measured spectrum being obtained from captured diffracted radiation from a periodic structure following illumination of said periodic structure using source radiation from said illumination source, the periodic structure being the spectrometer grating and an object being measured; determining an estimate of the source spectrum from the measured spectrum; and correcting the measured spectrum using the estimate of the source spectrum.
Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus
Abstract
An inspection apparatus includes a radiation source, an optical system, and a detector. The radiation source is configured to generate a beam of radiation. The optical system is configured to receive and direct the beam along an optical axis and toward a target so as to produce scattered radiation from the target. The optical system includes a beam displacer. The beam displacer includes two or more reflective surfaces. The beam displacer is configured to receive the beam along the optical axis, perform reflections of the beam so as to displace the optical axis of the beam, move linearly in at least a first dimension to shift the displaced optical axis, and preserve an optical property of the beam such that the optical property is invariant to the linear movement. The detector is configured to receive the scattered radiation and to generate a measurement signal based on the scattered radiation.
A reticle stage for a lithographic apparatus is disclosed. The reticle stage comprises a support for a reflective reticle, and at least one shielding element coupled to the support. The at least one shielding element is selectively configurable between a first position for shielding a portion of a patterned side of the reflective reticle from a radiation beam, and a second position for exposing the portion. An EUV lithography apparatus and a corresponding method of operating an EUV lithographic apparatus is also disclosed.
An apparatus for measuring a parameter of a structure related to a semiconductor manufacturing process. The apparatus comprises a source assembly configured to provide measurement radiation having one or more first wavelengths for irradiating the structure on a substrate. The apparatus further comprises a filter arranged to receive scattered measurement radiation that has scattered from the structure, wherein the filter is configured to transmit the scattered measurement radiation at the one or more first wavelengths and filter out radiation at one or more second wavelengths. The filter comprises a film with a curvature in at least one direction. The apparatus further comprises a plurality of detectors, located downstream of the filter, configured to detect the filtered scattered radiation configured to measure the parameter of the structure.
A method of characterizing features of an image is described. The method comprises accessing a template contour that corresponds to a set of contour points extracted from the image. The method comprises comparing the template contour and the extracted contour points based on a plurality of distances between locations on the template contour and the extracted contour points. The plurality of distances is weighted based on the locations on the template contour and overlap of the locations on the template contour with a blocking structure in the image. The method comprises, determining, based on the comparison, a matching geometry and/or a matching position of the template contour with the extracted contour points from the image.
G06V 10/44 - Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components
17.
PELLICLES AND MEMBRANES FOR USE IN A LITHOGRAPHIC APPARATUS
First and second novel membranes for use in a lithographic apparatus are disclosed. The first membrane comprises a core substrate and a metal silicate layer. The metal silicate layer is an outermost layer of the first membrane. The second membrane comprises a core substrate and an yttrium silicate layer. The yttrium silicate layer may be an outermost layer of the membrane or, alternatively, the yttrium silicate layer may be disposed between the core substrate and a layer of yttrium or yttrium oxide. The first and second membranes may be provided within an EUV lithographic apparatus. For example, the membranes may form part of a pellicle. The pellicle may be suitable for use adjacent to a reticle within an EUV lithographic apparatus. Alternatively, the membranes may form part of a dynamic gas lock. Alternatively, the membranes may form part of a spectral filter.
Disclosed is an optical arrangement for reflecting pulsed radiation, comprising: an optical retarder and optical reflector. The optical retarder comprises a first axis coinciding with a first linear polarization state and a second axis, orthogonal to the first axis, coinciding with a second linear polarization state. The optical retarder decomposes each pulse of the pulsed radiation into a first pulse component having the first linear polarization state and a second pulse component having the second polarization state and imposes a temporal delay between the first pulse component and the second pulse component of each pulse. The optical reflector comprises an axis of rotation at an angle having a magnitude of substantially 45 degrees with respect to each of the first axis and second axis of the optical retarder, the optical reflector being configured to at least partially reflect the first pulse component and the second pulse component of each pulse.
A system for cleaning contamination particles from a clamp of a lithography apparatus is described. The system includes a body configured to be inserted into the lithography apparatus, engaged by a tool handler of the lithography apparatus, and positioned by the tool handler for clamping by the clamp. Cleaning features are patterned on a clamp facing surface of the body. Locations and dimensions of the cleaning features on the clamp facing surface approximate locations and dimensions of the contamination particles on the clamp, such that relative movement between the cleaning features and the clamp cleans the contamination particles from the clamp. For example, the locations of the cleaning features on the clamp facing surface correspond to reticle contact areas (e.g., burls) on the clamp where the contamination particles are located. The dimensions of the cleaning features comprise a specific pitch, a line width, and a thickness.
A sample inspection tool is described. The inspection tool includes a light source configured to produce effective inspection radiation below 200nm, a sample holder, an imaging sub-system containing sub-system components that delivers light along an optical path from the light source to a sample to be held by the sample holder, and a barrier positioned between the last sub-system component in the optical path and the sample to be held by the sample holder. The barrier permits the radiation to pass therethrough while inhibiting impurities from reaching the sample to be held by the sample holder. In another embodiment, a barrier is provided for use in an inspection tool.
A system and a method for controlling a beam spot of an Advanced Charge Controller module in an electron beam system. The Advanced Charge Controller module includes a MEMS minor configured to steer and shape the beam in order to perform beam alignment, increase the power density at an area of interest and modulate the power density in real time.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof - Details
A height measurement sensor comprising projection and detection units. The projection unit comprises a radiation source and a projection grating comprising a projection grating spot having a plurality of grating lines, the projection grating arranged to receive radiation and output a radiation beam onto the surface to create a radiation spot. The detection unit comprises: a detection grating comprising a detection grating spot having a plurality of grating lines; a detector arranged to receive a reflected radiation beam comprising radiation from the radiation spot after passing through the detection grating spot; and a controller configured to (i) obtain a detector output signal comprising a plurality of periodic components; (ii) take a derivative of two points at different locations of the output signal, wherein the two points are separated by a period of the periodic components, and (iii) determine a focus plane of the sensor when the derivative changes sign.
An automatic defect classification method may include obtaining a set of image data comprising a set of candidate defects from an inspection tool, developing a plurality of defect review types and a plurality of nuisance review types, and classifying the set of candidate defects according to the defect review types and nuisance review types using a machine learning classifier. Using the plurality of nuisance review types in the classification method reduces a nuisance rate.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
24.
A SUPERCONTINUUM RADIATION SOURCE AND ASSOCIATED METROLOGY DEVICES
Disclosed is a supercontinuum radiation source comprising a pump laser arrangement for generating pump radiation and comprising a plurality of pump laser heads; a radiation combiner for combining the respective pump radiation from each pump laser head, and a non-linear fiber for receiving said pump radiation so as to excite a working medium within the non-linear fiber to generate said supercontinuum radiation. Each 5 pump laser head has dimensions no greater than 5cm in any direction. Alternatively, or in addition the supercontinuum radiation source further comprises a control arrangement for controlling the pump laser arrangement, said control arrangement being configured for non-simultaneous emission of pulses from each pump laser head.
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G02F 1/365 - Non-linear optics in an optical waveguide structure
25.
FIELD OF VIEW SELECTION FOR METROLOGY ASSOCIATED WITH SEMICONDUCTOR MANUFACTURING
Selecting one or more lists (700; 702) of fields of view (704-712) of a pattern layout for scanning electron microscope measurement and/or other inspection is described. A set of candidate fields of view is determined based on pattern groups (720-732) of a pattern layout and constraints on characteristics of a given field of view. The characteristics of a given field of view comprise a distance from the given field of view to another field of view and/or a size of the given field of view. The one or more lists of the fields of view are selected from the set of candidate fields of view according to prescribed criteria for combinations of fields of view included in the one or more lists. The prescribed criteria causes inclusion of an optimally diverse group of patterns in a predetermined number of lists of fields of view.
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
There is provided a metal oxide photoresist composition comprising electron scavenger particles selected to scavenge electrons having electron kinetic energies of 20 eV or less. Also provided is a method of improving the performance of a metal oxide photoresist, the method including providing one or more electron scavengers selected to scavenge electron having electron kinetic energies of 20 eV or less in the metal oxide photoresist. Further provided is the use of such a composition or method in a lithographic apparatus or process.
Apparatuses, systems, and methods for providing beams for defect detection and defect location binning associated with a sample of charged particle beam systems. A method of image analysis may include obtaining an image of a sample, identifying a feature captured in the image of the sample, generating a template image from a design layout of the identified feature, comparing the image of the sample with the template image, and processing the image based on the comparison. In some embodiments, a method of image analysis may include obtaining an image of a sample, identifying a feature captured in the obtained image of the sample, mapping the obtained image to a template image generated from a design layout of the identified feature, and analyzing the image based on the mapping.
Disclosed is a method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method comprises: obtaining layout data relating to a layout of a pattern to be applied to said structure, said pattern comprising said at least one structure; and obtaining a trained model, having been trained on metrology data and said layout data to infer a value and/or probability metric relating to a parameter of interest from at least said layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate. A value and/or probability metric is determined relating to the parameter of interest at one or more locations on the substrate different from said measurement locations from at least layout data using said trained model.
A support for supporting a partial or complete clamp during manufacture of the clamp, wherein the support comprises a raised flexible element located on a top surface, the flexible element being configured to deform as a result of a gas pressure differential acting on the flexible element to create gas flow restriction between a space between the clamp and the support, and a space outside the clamp.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Disclosed is a method for determining a parameter of interest relating to at least one target on a substrate. The method comprises obtaining metrology data comprising at least one asymmetry signal, said at least one asymmetry signal comprising a difference or imbalance in a measurement parameter from the target; obtaining a trained model having been trained or configured to relate said at least one asymmetry signal to the parameter of interest, the trained model comprising at least one proxy for at least one nuisance component of the at least one asymmetry signal; and inferring said parameter of interest for said at least one target from said at least one asymmetry signal using the trained model.
Systems and methods for training a machine learning model to classify defects with utility- function-based active learning are described. In one embodiment, one or more non-transitory, machine- readable medium is configured to cause a processor to determine a utility function value for unclassified measurement images, based on a machine learning model, wherein the machine learning model is trained using a pool of labeled measurement images. Based on a determination that the utility function value for a given unclassified measurement image is less than a threshold value, the unclassified measurement image is output for classification without the use of the machine learning model. The unclassified measurement images classified via the classification without the use of the machine learning model are added to the pool of labeled measurement images. The machine learning model is trained based on the measurement images classified via the classification without the use of the machine learning model.
G06F 18/21 - Design or setup of recognition systems or techniques; Extraction of features in feature space; Blind source separation
G06F 18/2413 - Classification techniques relating to the classification model, e.g. parametric or non-parametric approaches based on distances to training or reference patterns
G06F 18/40 - Software arrangements specially adapted for pattern recognition, e.g. user interfaces or toolboxes therefor
G06V 10/74 - Image or video pattern matching; Proximity measures in feature spaces
G06V 10/762 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using clustering, e.g. of similar faces in social networks
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
G06V 10/774 - Generating sets of training patterns; Bootstrap methods, e.g. bagging or boosting
G06V 20/69 - Microscopic objects, e.g. biological cells or cellular parts
In one embodiment, one or more non-transitory, machine-readable medium has instructions thereon, the instructions when executed by a processor being configured to perform operations comprising obtaining scanning electron microscopy (SEM) metrology data for first areas on a training wafer, obtaining optical metrology data for second areas on the training wafer, and training a model, by using the SEM metrology data and the optical metrology data for the training wafer, to generate parameters for features on a production wafer based on optical metrology data for areas of the production wafer.
A system includes an imaging system, a spatial filter, and a detector. The system is configured to receive a plurality of diffraction orders. The spatial filter is configured to block one or more undesired diffraction orders of the plurality of diffraction orders and to pass one or more desired diffraction orders of the plurality of diffraction orders. The spatial filter includes one or more obscurations having an angular dependent radius that varies azimuthally. The detector is configured to receive and measure an intensity of the one or more desired diffraction orders. The spatial filter is motorized.
There is described an assembly for a lithographic apparatus, wherein the assembly is configured to heat a pellicle membrane by one of or a combination of: i) provision of heated gas, ii) radiative heating, iii) resistive heating, and iv) inductive heating, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm. Also described is a method of extending the operative lifespan of a pellicle membrane, said method including heating at least a portion of a pellicle membrane when illuminated by EUV by one of or a combination of i) providing heated gas, ii) radiative heating, iii) resistive heating, and iv) inductive heating to effect heating of the at least one portion of the pellicle membrane, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm.
The invention relates to an EUV lithography system comprising: a housing (25), in the interior (24) of which a residual gas (27) is contained; and at least one gas-binding component (29) which is arranged in the interior (24) and has a gas-binding material for binding contaminating substances (28). The gas-binding component (29) comprises at least one flow channel (33) which has at least one surface having the gas-binding material, wherein a gas flow of the residual gas (27) in the flow channel (33) has a Knudsen number of between 0.01 and 5, preferably between 0.01 and 0.5, in particular between 0.01 and 0.3, and wherein an enclosure (26) is arranged in the interior (24) of the housing (25) and encapsulates a beam path of the EUV lithography system. The enclosure (26) preferably has an opening (37) having a maintenance shaft (36) in which the gas-binding component (29) is arranged.
Disclosed is a method of determining a value for a parameter of interest from a target on a substrate. The method comprises obtaining metrology data comprising single-wavelength parameter of interest values which were obtained using a respective different measurement wavelength; and determining said value for the parameter of interest from a stack sensitivity derived weighted combination of said single-wavelength parameter of interest values. Also disclosed is a method of selecting wavelengths for a measurement based on at least the derivative of the stack sensitivity with respect to wavelength.
A controller system is configured to control a plant and comprising a feedforward controller to provide, based on a reference state signal, a feedforward signal to the plant, and a feedback controller system to provide a feedback signal to the plant, based on a difference between the reference state signal and a plant state signal representing an actual state of the plant. The feedback controller system comprises an integrator, a trajectory generator, and a selector. The feedback controller system is configured to operate as a function of the reference state in a first control mode or a second control mode, wherein the feedback controller system, in the first control mode, operates the selector to select the trajectory generator output signal generated by the trajectory generator, and wherein the feedback controller system, in the second control mode, operates the selector to select the integrator output signal generated by the integrator.
G05B 19/19 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
A cleaning system for cleaning a component related to a lithographic process such as a pellicle, reticle, wafer or another lithographic component, comprising at least one radiation emitter configured to, in use, irradiate a region of the component so as to cause thermomechanical vibrations in the component and/or induce sputtering of contaminants present on the component.
The disclosure provides a system for holding an object in a semiconductor manufacturing process, the system comprising: at least one pad of dry adhesive material (100), the material having a structured surface, the surface having a structuring comprising a plurality of projections (110) each having a stem and an end face (120) facing away from the surface, said end face of the projections being adapted to grip the object (150), the system being adapted to release the object by movement of the object (150) with respect to the dry adhesive material (100) or vice versa.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
40.
SUBSTRATE TABLE, LITHOGRAPHIC APPARATUS, STICKER, COVER RING AND METHOD OF OPERATING A LITHOGRAPHIC APPARATUS
A substrate table, for use in an immersion lithographic apparatus, having a support area defining a support plane to support a substrate to be patterned and an upper surface surrounding the support area, wherein: the upper surface comprises an outer region that is substantially planar and a transition region proximate the support area; and the transition region is not co-planar with the outer region so as to ameliorate a level transition between the outer region and a non-standard substrate, which has a thickness different than a distance between the support plane and a nominal plane defined by the outer region.
A computer-implemented method of generating control actions for controlling a production system, such as by transmitting the control actions to a control system of the production system. The method comprises receiving, by a memory unit, a set of observation data characterizing a current state of the production system; processing, by a first neural network module of the memory unit, an input based on at least part of the observation data to generate encoded observation data; updating, by a second neural network module of the memory unit, history information stored in an internal memory of the second module using an input based on at least part of the observation data; obtaining, based on the encoded observation data and the updated history information, state data; and generating, based on the state data, one or more control actions.
Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.
The described system comprises an inspection system and associated software. The inspection system comprises a body that is configured to be inserted into a lithography apparatus, engaged by a tool handler of the lithography apparatus, and used for inspecting a portion of the lithography apparatus. Cameras are coupled to the body, and configured to obtain images of the portion of the lithography apparatus when the body is positioned by the tool handler. The software is configured to receive the images and facilitate semi-automated or automated inspection of the portion of the lithography apparatus based on the one or more images. Compared to prior approaches, the described system requires much less time for inspection, produces consistent imaging resolution and clarity, does not require opening or other disassembly of the lithography apparatus, reduces impact on a lithography apparatus micro-environment and the potential for contamination, and has other advantages.
Disclosed herein is a substrate arrangement for use in a lithographic apparatus, the substrate arrangement comprising: a resist; a photosensitive resist under-layer; and a substrate; wherein the exposure threshold of the resist under-layer is lower than the exposure threshold of the resist. The resist and the resist under-layer are both photosensitive to EUV radiation.
G03F 7/09 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers
G03F 7/095 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
An optical apparatus for a reticle stage of a lithographic apparatus is disclosed. The optical apparatus comprises: a reflective optical element comprising a surface for exposure to radiation; at least two electrodes located at the surface; and a measurement system configured to measure one or more electrical characteristics of the reflective optical element between the at least two electrodes. Also disclosed is a method of measuring a degradation of a reflective optical element having a surface for exposure to radiation in a lithographic apparatus, the method comprising: providing at least two electrodes at the surface of the reflective optical element; and measuring one or more electrical characteristics of the reflective optical element between the at least two electrodes.
Disclosed is a method of performing a lithographic performance qualification test. The method comprises: obtaining one or more exposure layouts, each relating to exposure of multiple exposure fields on a substrate; performing a dummy exposure on a substrate comprising photoresist for each of said one or more exposure layouts, said dummy exposure using no exposure illumination or exposure illumination having an exposure energy below an exposure threshold of said photoresist; monitoring one or more exposure parameters of each dummy exposure to obtain exposure parameter data; and evaluating lithographic performance of each dummy exposure and/ its corresponding exposure layout from the exposure parameter data respective to that dummy exposure.
A system for use in a lithographic apparatus comprises: a substrate table; another device; and at least one deformable partition. The substrate table (for example a wafer stage) is arranged to support a substrate. The system is configurable in a first configuration such that a surface of the device faces and is adjacent to the substrate and the substrate table. The at least one deformable partition either: (a) extends partially from the substrate table towards the surface of the device when the system is in the first configuration; or (b) extends partially from the surface of the device that faces and is adjacent to the substrate and the substrate table when the system is in the first configuration towards the substrate table.
A fast and dynamic waveplate is described. The present systems and methods utilize the stress birefringence that generates inside a plate when force is applied on sides of the plate. The force is applied using a set of piezoelectric actuators that are distributed symmetrically along the side(s) of the plate. The magnitude of the force can be controlled using a control unit. A generated stress birefringence is spatially varying across the plate. By carefully adjusting the force, the plate can be converted into a waveplate with arbitrary value of retardance that is determined by the force. Since the parameter that determines the birefringence is force, a control unit can be used to apply different combinations of force values at a sub-millisecond speed to achieve fast control of the value of the birefringence as well as an orientation in the plate.
Van Der Straten, Koen, Wilhelmus, Cornelis, Adrianus
Cao, Peigen
Engblom, Peter, David
Tel, Wim, Tjibbo
Nechaev, Konstantin, Sergeevich
Anunciado, Roy
Dillen, Hermanus, Adrianus
Slachter, Abraham
Abstract
A method of grouping pattern features of a substantially irregular pattern layout for patterning a substrate in a lithographic process. The method comprises obtaining at least one substantially irregular pattern representation, each at least one substantially irregular pattern representation relating to a respective layer of interest; grouping a plurality of pattern features comprised within the substantially irregular pattern representation based on geometry and/or at least one processing attribute relating to processing performance into a plurality of groups, each group comprising a plurality of pattern features which are similar in terms of geometry and/or the at least one processing attribute; and deriving a parameter of interest associated with one or more groups of the plurality of groups.
A computer-implemented method for training a diagnostic model for diagnosing a production system, wherein the production system comprises a plurality of sub-systems. The adaptive diagnostic model comprises, for each sub-system, a corresponding first learning model arranged to receive input data, and to generate compressed data for the production system in a corresponding compressed latent space. A second learning model is arranged to receive the compressed data generated by the first learning models, and generate further compressed data for the production system in a further compressed latent space. The method comprises performing unsupervised training of the first and second learning models based on training data derived from sensor data characterizing the sub-systems.
A laser beam amplification system comprising a plurality of laser amplifiers configured to amplify a laser beam in series, wherein at least one of the laser amplifiers is supported by a plurality of actuators which are configured to move the laser amplifier in a controlled manner and thereby apply a desired movement to the laser beam.
Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the printed pattern to determine a local focus point (LFP) for an imaging device; selecting a HS area in the printed pattern that contains a HS; and determining the LFP 5 proximate to the HS area based on the LFP search criteria, the LFP not containing the HS.
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
A control system (190) includes: an operating module configured to control a target supply apparatus in a start-up mode by increasing an amount of pressure P applied to molten target material in the target supply apparatus (110) from a first apparatus pressure to a second apparatus pressure; and a control module configured to direct target material emitted from the target supply apparatus during the start-up mode to a receptacle (160) in an interior of a vacuum chamber (109) by controlling a vessel pressure. The vessel pressure is a pressure in the interior of the vacuum chamber, the target material emits EUV light when converted to plasma, and the target material is not converted to the plasma that emits EUV light during the start-up mode.
Disclosed is an apparatus for and method of steering a beam (23b) from a laser (500) to align the beam with a target (14) of source material in an EUV light source (10) in which an acousto-optical device (510) is caused to perform a pulse steering function in addition to a beam energy (amplitude) control function more typically performed by a dedicated acousto-optical modulator thus eliminating a need for a separate acousto-optical device in the beam path between the laser and the target.
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G02F 1/11 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device and a projection system to project an image of the pattern onto a substrate. The illumination system includes a first and second enclosures, a sealing device, and a protective device. The first enclosure encloses a first environment and includes a first opening and first connection corresponding to the first opening. The second enclosure includes a second connection structure to couple to the first connection structure to prevent mixing of substances between the first environment and a second environment outside of the first and second enclosures. The sealing device is disposed between the first and second connection structures. The material of the sealing device is chemically reactive to the first environment. The protective device is disposed on the sealing device proximal to the first environment to shield the sealing device from the first environment.
The invention provides an object holder to hold an object, comprising: a clamp side to clamp the object, wherein the clamp side is electrically conductive, at least one electrode arranged at a distance from the clamp side, and electrically isolated from the clamp side, a controller arranged to provide an electrode voltage to the at least one electrode based on a measured charge signal representative for a charge level of the object holder and/or the object in order to decrease a potential difference between an electrical potential of the clamp side and an electrical potential of the object.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
57.
A BEAM MANIPULATOR IN CHARGED PARTICLE-BEAM APPARATUS
Disclosed herein is a manipulator or an array of manipulator. A manipulator manipulates a charged particle beam in a projection system. The manipulator comprising a substrate with major surfaces and a through-passage between associated apertures in the major surfaces. The through passage configured for passage of a path of a charged particle beam. An inner wall of the through- passage between the major surfaces comprises a plurality of electrodes configured to manipulate the charged particle beam. Each electrode comprises doped substrate. The through-passage comprises recesses that extend away from the path of the charged particle beam. Each recess defines a gap between the adjacent electrodes and further comprising an electrically insulating region between the adjacent electrodes. The recesses extend behind at least one of the adjacent electrodes relative to the path of the charged particle beam and comprising at least part of the electrically insulating region.
Methods and apparatus are disclosed for patterning a target layer by selectively removing material. In one arrangement, the target layer is irradiated with a patterned beam. The patterned beam generates a plasma in a plasma pattern that locally interacts with the target layer to define where material is to be removed from the target layer. A bias voltage is applied to the substrate during the irradiation to control a distribution of energies of ions of the plasma impinging on the target layer.
A system includes optical devices, reflective devices, a movable reflective device, and a detector. The optical devices are disposed at a first plane and around a axis of the system and receive scattered radiation from targets. The reflective devices are disposed at at least a second plane and around the axis. Each of the reflective devices receives the scattered radiation from a corresponding one of the optical devices. The movable reflective device is disposed along the axis and receives the scattered radiation from each of the reflective devices. The detector receives the scattered radiation from the movable reflective device.
The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
Disclosed is an apparatus for and method of using local alignment position deviation parameters for alignment marks on a semiconductor wafer wherein the parameters are used to generate one or more values indicating a condition of the alignment marks, which values may be used to obtain an wafer grid model having an improved fit.
A vessel for an EUV radiation source, the vessel comprising a guide portion for directing fuel debris from a plasma formation region of the radiation source towards a fuel debris removal device, a wall comprising an opening, wherein at least a part of the guide portion is arranged in the opening of the wall so that a gap is defined between the guide portion and the wall; and a gas supply system configured to supply a gas into the gap to control a transfer of heat between the guide portion and the wall.
A method of compensating for focus deviations on a substrate having a plurality of layers present thereon includes generating a focus prediction map (108) for the substrate. In one approach, the focus prediction map is generated by obtaining key performance indicator (KPI) data (106) on the substrate using an alignment sensor, determining a correlation between the KPI data and focus offset data (102) for positions on the substrate, and using the correlation and the KPI data, generating a focus prediction map for the substrate. In another approach, the prediction map is generated by obtaining a first layer height map for a first layer, measuring, with a level sensor, a second layer height map for a second layer overlying the first layer, and subtracting the first height map from the second height map to obtain a delta height map for the substrate.
A optical assembly comprising a bulb (12) and a lens (20) for a laser-operated light source (10). The bulb comprises a chamber for accommodating an ionizable gas and a plasma formed by energizing the ionizable gas. In use, the lens is arranged to focus a wavefront of radiation (16) from a laser (14) to a virtual object point located inside the chamber. The bulb comprises a longitudinal axis and a transverse axis perpendicular to the longitudinal axis. In use, the bulb is arranged to transmit and refract the wavefront of the radiation to a first real image point in a first cross-section of the longitudinal axis and a second real image point in a second cross-section of the transverse axis. The first real image point and the second real image point are image conjugates of the virtual object point. The virtual object point, the first real image point and the second real image point coincide.
H01J 61/02 - Gas-discharge or vapour-discharge lamps - Details
H01J 61/33 - Special shape of cross-section, e.g. for producing cool spot
H01J 65/04 - Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating
65.
ELECTRON-OPTICAL DEVICE, METHOD OF COMPENSATING FOR VARIATIONS IN A PROPERTY OF SUB-BEAMS
Electron-optical devices and associated methods are disclosed. In one arrangement, an electron- optical device projects a multi-beam of sub-beams of charged particles to a sample. A plurality of plates are provided in which are defined respective aperture arrays. The plates comprise an objective lens array configured to project the sub-beams towards the sample. The aperture arrays defined in at least two of the plates each have a geometrical characteristic configured to apply a perturbation to a corresponding target property of the sub-beams. A controller controls potentials applied to the plates having the geometrical characteristics such that the applied perturbations together substantially compensate for a variation in the target property over a range of a parameter of the device.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
H01J 37/302 - Controlling tubes by external information, e.g. programme control
66.
ALIGNMENT DETERMINATION METHOD AND COMPUTER PROGRAM
The present invention concerns a method of determining alignment of electron optical components in a charged particle apparatus. The charged particle apparatus comprising: an aperture array and a detector configured to detect charged particles corresponding to beamlets that pass through the corresponding apertures in the aperture array. The method comprises: scanning each beamlet in a plane of the aperture array over a portion of the aperture array in which a corresponding aperture of the aperture array is defined so that charged particles of each beamlet may pass through the corresponding aperture; detecting during the scan any charged particles corresponding to each beamlet that passes through the corresponding aperture; generating a detection pixel for each beamlet based on the detection of charged particles corresponding to each beamlet at intervals of the scan; and collecting information comprised in the detection pixel such as the intensity of charged particles.
The invention provides a method of reducing cyclic error effects in a lithographic process having a projection phase and an idle phase, the method comprising: controlling in a first control loop a first position of a first module, the first module being a position controlled mirror of a projection system, the first control loop having a first bandwidth and comprising a first position measurement system having a first cyclic error, wherein controlling the first position comprises continuously moving the first module at least during the projection phase, such that a first main frequency of the first cyclic error will be above the first bandwidth of the first control loop.
A gas supply device for generating a purge gas comprising hydrogen and oxygen, the device comprising: a hydrogen inlet configured to receive a hydrogen gas flow; a mixing gas inlet configured to receive a mixing gas flow comprising nitrogen and oxygen; a mass flow controller in fluid communication with the mixing gas inlet and configured to provide a controlled gas flow having a controlled mass flow rate; an enricher configured to generate an enriched gas flow having a lower proportion of nitrogen to oxygen than the first gas flow; and a mixer configured to mix the hydrogen gas flow with a flow containing the mixing gas.
Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods are faster and generate more information than typical methods for generating alignment signals because they utilize existing structures in a patterned semiconductor wafer instead of dedicated alignment structures. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning comprises: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.
Spots of illumination directed at a target are described. Spots of illumination are generated from a single illumination source. Ghost reflections often prevalent in wafer alignment sensors are reduced or eliminated. First, second, and third spot mirrors are described. The first spot mirror receives illumination along a first axis, reflects a first portion of the illumination away from the first axis, and transmits a second portion of the illumination along the first axis. The second spot mirror receives the first portion of the reflected illumination and at least partially reflects a third portion of the illumination along a second axis. The third spot mirror receives and fully reflects a fourth portion of the illumination along a third axis. The second portion, the third portion, and the fourth portion of the illumination are directed toward the target at different angles relative to each other to create three different spots of illumination.
There is described a liquid metal supply assembly for use in an EUV light source, the assembly comprising: a) a first reservoir configured to hold liquid metal at a first temperature; b) a liquid metal transportation conduit in fluid communication with the first reservoir wherein the liquid metal transportation conduit is configured to be at a second temperature different to the first temperature; c) a temperature sensor configured to measure the temperature of the liquid metal transportation conduit to detect a flow of liquid from the first reservoir through the liquid metal transportation conduit via a change in temperature of the liquid metal transportation conduit. Also described is an EUV light source, a method of detecting flow of a liquid metal, as well as the use thereof.
Methods of processing a sample and charged particle assessment systems are disclosed. In one arrangement, a sample is processed using a multi-beam of sub-beams of charged particles. At least a portion of a sub-beam processable area is processed with each sub-beam. The sub-beam processable area comprising an array of sections having rows of sections and columns of sections. Each row of sections defines an elongate region that is substantially equal to or smaller than a pitch at the sample surface of the sub-beams in the multi-beam. A plurality of the sections are processed.
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
H01J 37/302 - Controlling tubes by external information, e.g. programme control
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Described herein are systems, methods, and media for determining processing parameters associated with lithography processes. In some embodiments, image data of features on a substrate may be obtained, and the image data may be analyzed in Fourier space. Based on the analysis, an amplitude and a phase may be determined, and an overlay of the features may be determined based on the amplitude and the phase.
An apparatus includes an actuatable element coupled to target material in a target material dispenser and configured to induce velocity perturbations in a target stream (provided by the target material dispenser) based on a target control signal; a detection apparatus configured to observe the targets in the stream, and to generate a target detection signal based on the observation; a controller configured to receive the target detection signal, analyze both a spacing and a sizing of peaks in the target detection signal, and generate a waveform control signal including updating parameters of the waveform control signal relating to one or more coalescence lengths in the target stream based at least in part on the analysis; and a waveform generator in communication with the actuatable element and the controller, and configured to supply the target control signal to the actuatable element based at least in part on the waveform control signal.
There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample, The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/244 - Detectors; Associated components or circuits therefor
H01J 37/26 - Electron or ion microscopes; Electron- or ion-diffraction tubes
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
We describe herein a waveguide comprising: a first section, the first section being configured to generate, by a non-linear optical process, a broadened wavelength spectrum of pulsed radiation provided to an input end of the waveguide; a second section, the second section comprising an output end of the waveguide, the second section being configured to exhibit a larger absolute value of group velocity dispersion than the first section; wherein a length of the second section is configured to reduce a peak intensity of one or more peaks in the broadened wavelength spectrum by at least 20%. We also describe herein a method for manufacturing a waveguide.
Systems and methods of removing a contaminant from an emitter tip of an electron source in an electron beam apparatus are disclosed. An electron beam apparatus may include an electron source comprising an emitter tip configured to emit electrons and an optical source configured to generate an optical beam illuminating a portion of the emitter tip to excite a surface mode of the optical beam, wherein the excited surface mode facilitates removal of a contaminant from a surface of the illuminated portion of the emitter tip. The excited surface mode may comprise a propagating surface wave or a localized surface wave. The emitter tip may comprise a grating structure, wherein a characteristic of the grating structure matches a wavevector of the optical beam.
Systems, methods, and computer programs for providing a force opposed to inertial forces present on a patterning device during imaging operations of a photolithographic system include a means for providing coarse positioning of a pusher in combination with a short-stroke actuator and pushing tip configured to engage an edge of the patterning device. In an embodiment, the coarse positioning is provided by providing a guide along which the short-stroke actuator may be translated, and a locking mechanism is configured to selectively hold the actuator in place relative to the patterning device. In an embodiment, the coarse positioning is provided by a long-stroke actuator, for example an eccentric linear drive actuator.
Disclosed is a method of measuring a focus parameter from a focus target, and associated substrate and associated patterning device. The focus target comprises at least a first sub-target and a second sub- target, each having at least a periodic main feature, wherein a respective pitch and/or dimensional parameter of at least some sub-elements of the main feature are configured such that said first sub-target and second sub-target have a respective different best focus value; and wherein each said main feature is formed with a focus dependent center-of-mass and/or pitch. The method comprises obtaining a first measurement signal from said first sub-target and a second measurement signal from said second sub- target; determining a difference signal of said first measurement signal and second measurement signal; and determining said focus parameter from said difference signal.
The disclosure provides a projection unit for a level sensor, comprising: a first light pipe having a first inlet configured to receive radiation from a source and a first outlet; and a second light pipe having a second inlet configured to receive the radiation from the first light pipe and a second outlet. The unit may comprise a lens device configured to receive radiation from the second outlet and to output radiation having a predetermined distribution of intensity and irradiance.
Systems and methods for training a machine learning model for defect detection include obtaining training data including an inspection image of a fabricated integrated circuit (IC) and design layout data of the IC, and training a machine learning model using the training data. The machine learning model includes a first autoencoder and a second autoencoder. The first autoencoder includes a first encoder and a first decoder. The second autoencoder includes a second encoder and a second decoder. The second decoder is configured to obtain a first code outputted by the first encoder. The first decoder is configured to obtain a second code outputted by the second encoder.
An improved method and system for image alignment of an inspection image are disclosed. An improved method comprises acquiring an inspection image, acquiring a reference image corresponding to the inspection image, acquiring a target alignment between the inspection image and the reference image based on characteristics of the inspection image and the reference image, estimating an alignment parameter based on the target alignment, and applying the alignment parameter to a subsequent inspection image.
A fault in a subject production apparatus which is suspected of being a deviating machine, is identified based on whether it is possible to train a machine learning model to distinguish between first sensor data derived from the subject production apparatus, and second sensor data derived from one or more other production apparatuses which are assumed to be behaving normally. Thus, the discriminative ability of the machine learning model is used as an indicator to discriminate between a faulty machine and the population of healthy machines.
The disclosure provides a method for preventing degradation of a material of an optical component for extreme ultraviolet light (EUV) lithography, the method comprising the steps of: arranging a wafer on a wafer table; producing extreme ultraviolet light using a source of extreme ultraviolet light; reflecting the extreme ultraviolet light towards the wafer via at least one reflective device, the at least one reflective device including a reticle device for providing a pattern to the extreme ultraviolet light; and stabilizing a material of the at least one reflective device by providing an oxygen containing gas.
A correction to an error of overlay measurement which accounts for target structure asymmetry using a neural network is described. According to embodiments of the present disclosure, an overlay measurement accuracy can be improved by accounting for multiple and/or asymmetric perturbations in the target structure. A trained neural network is described which generates a correction value for overlay measurement based on input of measure distance-to-origin for asymmetry measurement at multiple wavelengths. Based on the as- measured overlay measurements, which may not account for target structure asymmetry, and the correction value, a true overlay measurement is determined—which can exhibit improved accuracy and reduced uncertainty versus uncorrected values.
Disclosed is a conduit structure for an EUV system in which a nonhorizontal interior surface of the conduit is provided with flow obstructions that impede the flow of molten target material across the surface so that the molten target material freezes on and is captured by the interior surface. Where the conduit is one through which droplets of target material pass out of an EUV chamber, flow obstructions on the side of the conduit ensure that molten target material that is originally caught by an upper surface of the conduit and flows to the sidewall adheres to the sidewall and stays clear of the actual droplet path. This ensures that an opening in the conduit is maintained allowing the intended flow. The conduit structure may be placed, for example, between an interior of the chamber in which the EUV radiation is generated and a target material receptacle.
A charged-particle optical apparatus configured to project a multi-beam of charged particles, the apparatus comprising: a charged particle device switchable between (i) an operational configuration in which the device is configured to project the multi-beam to a sample along an operational beam path extending from a source of the multi-beam to the sample and (ii) a monitoring configuration in which the device is configured to project the multi-beam to a detector along a monitoring beam path extending from the source to the detector; wherein the monitoring beam path diverts from the inspection beam path part way along the operational beam path.
Described herein is a method for determining values of design variables of a lithographic process based on a predicted failure rate for printing a target pattern on a substrate using a lithographic apparatus. The method includes obtaining an image corresponding to a target pattern to be printed on a substrate using a lithographic apparatus, wherein the image is generated based on a set of values of design variables of the lithographic apparatus or a lithographic process; determining image properties, the image properties representative of a pattern printed on the substrate, the pattern corresponding to the target pattern; predicting a failure rate in printing the pattern on the substrate based on the image properties; and determining a specified value of a specified design variable based on the failure rate, the specified value to be used in the lithographic process to print the target pattern on the substrate.
The present invention provides a detector inspection device for interrogating at least part of a detector comprised in a charged particle-optical assessment apparatus, the detector inspection device comprising: a coupler configured to be positioned proximate to a detector element of a detector; and a device controller configured to apply a stimulating signal to the coupler to stimulate a response signal in the detector for interrogating at least part of the detector.
A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is configured to operate such that, during operation, heat is radiated toward a sample held on the sample holder. The hot component is smaller than the sample. The thermal compensator is configured to heat the sample so as to reduce thermal gradients therein.
Method for calculating a reparation dose for a die of a substrate, comprising: a) obtaining a function of a distribution of an energy dose applied to the die over time based on a measurement of exposure energy, b) determining energy dose in a timeslot with a reparation point in the centre of the timeslot, and proceeding with step c) for the timeslot if the energy dose in the timeslot is less than an energy dose limit, c) calculating a slope of the function in the timeslot to determine at least one measurement point, the at least one measurement point being positioned within the timeslot based on the slope of the function in the timeslot; d) calculating a reparation dose at the measurement point; e) calculating a repair energy based on the reparation dose; f) updating the function over the timeslot based on applying the repair energy at the reparation point.
Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the measured positions of the first marks. The fitted first model represents positions of the field regions. The method comprises measuring positions of a plurality of second marks in one field region or in each of a plurality of field regions. A second model is fitted to the measured positions of the second marks. The fitted second model represents a shape of each field region. A sample map is output using the fitted first and second models.
A method for processing images for metrology using a charged particle beam tool may include obtaining, from the charged particle beam tool, an image of a portion of a sample. The method may further include processing the image using a first image processing module to generate a processed image. The method may further include determining image quality characteristics of the processed image and determining whether the image quality characteristics of the processed image satisfy predetermined imaging criteria. The method may further include in response to the image quality characteristics of the processed image not satisfying the imaging criteria, updating a tuning condition of the charged-particle beam tool, acquiring an image of the portion of the sample using the charged-particle beam tool that has the updated tuning condition, and processing the acquired image using the first image processing module to enable the processed acquired image to satisfy the predetermined imaging criteria.
A charged-particle apparatus generates a plurality of sub-beams from a source beam of charged particles and direct the sub-beams downbeam toward a sample position. The charged-particle apparatus comprises a charged particle source, an aperture array and a charged particle optical component. The charged-particle source comprises an emitter to emit a source beam of charged particles along a divergent path. The aperture array is positioned in the divergent path so the aperture array generates sub-beams from the source beam. The charged-particle-optical component acts on the source beam upbeam of the aperture array. The charged-particle-optical component comprises a multipole and/or a charged-particle lens. The multipole operates on the source beam to vary the position of the divergent path at the aperture array. The multipole may vary a cross-sectional shape of the divergent path at the aperture array. The charged-particle-optical lens compensates for variations in distance between the emitter and the aperture array.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
95.
METHODS, SOFTWARE, AND SYSTEMS FOR DETERMINATION OF CONSTANT-WIDTH SUB-RESOLUTION ASSIST FEATURES
Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern comprising sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization process may be perform with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.
Dynamic aberration control in a semiconductor manufacturing process is described. In some embodiments, wavefront data representing a wavefront provided by an optical projection system of a semiconductor processing apparatus may be received. Wavefront drift may be determined based on a comparison of the wavefront data and target wavefront data. Based on the wavefront drift, one or more process parameters may be determined. The one or more process parameters include parameters associated with a thermal device, where the thermal device is configured to provide thermal energy to the optical projection system during operation.
A method of image template matching with an adaptive weight map is described. An image template is provided with a weight map, which is adaptively updated based during template matching based on the position of the image template on the image. A method of template matching a grouped pattern or artifacts in a composed template is described, wherein the pattern comprises deemphasized areas weighted less than the image templates. A method of generating an image template based on a synthetic image is described. The synthetic image can be generated based on process and image modeling. A method of selecting a grouped pattern or artifacts and generating a composed template is described. A method of per layer image template matching is described.
An optical system for directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target. The optical system comprises a first optical component configured to redistribute a first laser pulse to form a shaped laser pulse having a hollow region. The optical system comprise a second optical component configured to focus the shaped laser pulse toward the target. The optical system comprises a third optical component configured to focus a second laser pulse toward the target within the hollow region of the shaped laser pulse. The first, second and third optical components are coaxially arranged on the optical axis.
Disclosed is a method for determining a mechanical property of a layer applied to a substrate. The method comprises obtaining input data comprising metrology data relating to said layer and layout data relating to a layout of a pattern to be applied in said layer. A first model or first model term is used to determine a global mechanical property related to said layer based on at least said input data; and at least one second model or at least one second model term is used to predict a mechanical property distribution or associated overlay map based on said first mechanical property and said layout data, the mechanical property distribution describing the mechanical property variation over said layer.
Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.
patents
