A carbon nanotube membrane comprising carbon nanotubes having a pre-selected bonding configuration or (m, n) chirality, characterised in that the carbon nanotube membrane comprises a substantial amount of carbon nanotubes having zigzag (m, 0) chirality and/or armchair (m, m) chirality. An apparatus for the treatment of a carbon-based membrane, a method for treating carbon based membranes, pellicles comprising carbon based membranes, lithographic apparatuses comprising carbon nanotube membranes, as well as the use of carbon nanotube membranes in lithographic apparatuses and methods are also described.
Disclosed herein is an electron-optical device, a lens assembly and an electron-optical column. The electron-optical device comprises an array substrate and an adjoining substrate and is configured to provide a potential difference between the substrates. An array of apertures is defined in each of the substrates for the path of electron beamlets. The array substrate has a thickness which is stepped so that the array substrate is thinner in the region corresponding to the array of apertures than another region of the array substrate.
A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: an objective lens array assembly comprising a plurality of objective lenses, each configured to project one of a plurality of charged-particle beams onto a sample; a detector array associated with the objective lens array assembly and configured to detect charged-particles emitted from the sample; and a circuit comprising an amplifier in data communication with the detector array; wherein the amplifier is configured to be tunable in order to tune amplification of signals from the detector array.
Objective lens array assemblies and associated methods are disclosed. In one arrangement, the objective lens array assembly focuses a multi-beam of sub-beams on a sample. Planar elements define a plurality of apertures aligned along sub-beam paths. An objective lens array projects the multi-beam towards a sample. Apertures of one or more of the planar elements compensate for off-axis aberrations in the multi-beam.
Disclosed herein is an aperture array configured to define sub-beams that are scanned in a scanning direction in a charged particle apparatus, the aperture array comprising a plurality of apertures arranged in an aperture pattern that comprises: a plurality of parallel aperture rows, wherein apertures are arranged along the aperture rows and the aperture rows are inclined relative to the scanning direction; an edge aperture row defining an edge of the aperture pattern; and an adjacent aperture row adjacent the edge row; wherein the edge aperture row and the adjacent aperture row each comprise fewer apertures than another aperture row of the aperture pattern.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
6.
DETECTOR SUBSTRATE, AN INSPECTION APPARATUS AND METHOD OF SAMPLE ASSESSMENT
There is provided a detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for the beam paths of respective charged particle beams of a multi-beam. The detector substrate comprises: a sensor unit array. A sensor unit of the sensor unit array is adjacent a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array comprises an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit comprising a Trans Impedance Amplifier and/or an analogue to digital converter.
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/244 - Detectors; Associated components or circuits therefor
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A manipulator for manipulating a charged particle beam in a projection system, the manipulator comprising a substrate having opposing major surfaces in each of which is defined an aperture and a through-passage having an interconnecting surface extending between the apertures; wherein the interconnecting surface comprises one or more electrodes; the manipulator further comprising a potential divider comprising two or more resistive elements connected in series, the potential divider comprising an intermediate node between each pair of adjacent resistive elements, wherein at least one resistive element is formed within the substrate so as to extend between the opposing major surfaces; wherein the intermediate node is electrically connected to at least one of the one or more electrodes.
There is described an optical element for a lithographic apparatus, said optical element comprising an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, said method comprising the steps of: depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses comprising such optical elements are also described.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
9.
APERTURE ASSEMBLY, BEAM MANIPULATOR UNIT, METHOD OF MANIPULATING CHARGED PARTICLE BEAMS, AND CHARGED PARTICLE PROJECTION APPARATUS
The disclosure relates to apparatus and methods for manipulating charged particle beams. In one arrangement, an aperture assembly is provided that comprises a first aperture body and a second aperture body. Apertures in the first aperture body are aligned with apertures in the second aperture body. The alignment allows charged particle beams to pass through the aperture assembly. The first aperture body comprises a first electrode system for applying an electrical potential to an aperture perimeter surface of each aperture in the first aperture body. The first electrode system comprises a plurality of electrodes. Each electrode is electrically isolated from each other electrode and electrically connected simultaneously to the aperture perimeter surfaces of a different one of a plurality of groups of the apertures in the first aperture body.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
Disclosed herein is a substrate stack comprising a plurality of substrates, wherein: each substrate in the substrate stack comprises at least one alignment opening set; the at least one alignment opening set in each substrate is aligned for a light beam to pass through corresponding alignment openings in each substrate; and each substrate comprises at least one alignment opening that has a smaller diameter than the corresponding alignment openings in the other substrates.
H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 9/02 - Manufacture of electrodes or electrode systems
H01J 29/80 - Arrangements for controlling the ray or beam after passing the main deflection system, e.g. for post-acceleration or post-concentration, for colour switching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Disclosed herein is a manipulator lensing device for focusing a beam of charged particles, wherein the manipulator lensing device comprises a first structure (401) through which is formed an opening, wherein the path of the beam is substantially along a longitudinal axis of the opening, a second structure (402) with a surface (406) surrounding the opening, a support (403) that connects the second structure to the first structure and surrounds the second structure, and an electrode arrangement (407) provided on the surface (406) of the second structure, wherein a first surface (404) of the first structure (401) surrounds the opening, a second surface (405) of the first structure (401) surrounds the opening, the surface (406) of the second structure (402) being arranged along the longitudinal axis between the first and second surfaces of the first structure, the electrode arrangement (407) and each of the first (404) and second (405) surfaces of the first structure (401) are separated from each other by a respective gap in a direction parallel to the longitudinal axis, wherein, along the longitudinal axis, the extent of the support (403) is less than the extent of the surface (406) of the second structure and/or electrode arrangement (407). Further disclosed is a multi-array lens configured focus a plurality of beamlets of charged particles along a multi-beam path, wherein each lens in the array comprises said manipulator lensing device.
Disclosed herein is an electron-optical assembly testing system for testing an electron-optical assembly, the system comprising: a source of charged particles (601) configured to emit a beam of charged particles; an electron-optical assembly holder (604) configured to hold an electron-optical assembly (401) to be tested such that, when the system is in use with an electron-optical assembly held by the electron-optical assembly holder, the electron-optical assembly is illuminated by the beam; and a sub-beam detector (607) for detecting sub-beams of charged particles that have been transmitted through the electron-optical assembly.
A multi-beam manipulator device operates on sub-beams of a multi-beam to deflect the subbeam paths. The device comprises: an electrode as pairs of parallel surfaces. Each pair of parallel surfaces comprises a first surface that is arranged along a side of a corresponding line of sub-beams and a second surface that is arranged parallel to the first surface and along an opposite side of the corresponding line of sub-beam paths. A first pair of parallel surfaces is configured to electrostatically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying a deflection amount to the paths of sub-beams in a first direction. A second pair of parallel surfaces is configured to electro-statically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying another deflection amount to the paths of sub-beams in a second direction.
A pellicle membrane for a lithographic apparatus, said membrane comprising a matrix including a plurality of inclusions distributed therein is provided. Also provided is a method of manufacturing said pellicle membrane, a lithographic apparatus comprising said pellicle membrane, a pellicle assembly for use in a lithographic apparatus comprising said membrane, as well as the use of the pellicle membrane in a lithographic apparatus or method.
A charged particle assessment tool comprising: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having an sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes adjacent respective ones of the beam apertures and configured to capture charged particles emitted from the sample.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/09 - Diaphragms; Shields associated with electron- or ion-optical arrangements; Compensation of disturbing fields
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/244 - Detectors; Associated components or circuits therefor
H01J 37/28 - Electron or ion microscopes; Electron- or ion-diffraction tubes with scanning beams
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A pellicle membrane for a lithographic apparatus, said membrane comprising uncapped carbon nanotubes is provided. Also provided is a method of regenerating a pellicle membrane, said method comprising decomposing a precursor compound and depositing at least some of the products of decomposition onto the pellicle membrane. Also described is a method of reducing the etch rate of a pellicle membrane, said method comprising providing an electric field in the region of the pellicle membrane to redirect ions from the pellicle, or heating elements to desorb radicals from the pellicle, preferably wherein the pellicle membrane is a carbon nanotube pellicle membrane as well as an assembly for a lithographic apparatus, said assembly including a biased electrode near or including the pellicle membrane or heating means for pellicle membrane.
A method of manufacturing a pellicle membrane, the method comprising: providing a first sacrificial layer on a planar substrate to form a stack; and providing, to at least a portion of the stack, at least one metal silicide or doped metal silicide pellicle core layer which forms at least part of the pellicle membrane is described. Also described is a pellicle membrane assembly comprising a substrate, a first sacrificial layer, and at least one metal silicide or doped metal silicide pellicle layer which forms at least part of a pellicle core, as well as a lithography apparatus comprising such pellicles.
There is provided a method of manufacturing a membrane assembly for EUV lithography, wherein a layer which forms at least part of a pellicle membrane is provided after one or more etching steps which define a pellicle border holding the pellicle membrane. Also provided is a pellicle substrate, the substrate comprising: a stack having a front face and back face, wherein one or more layers on the back face of the stack have been selectively removed to define a pellicle border region for holding the pellicle membrane before the layer which forms at least part of a pellicle membrane has been provided.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
Inspection apparatus for inspecting an object such as a pellicle for use in an EUV lithographic apparatus, the inspection apparatus comprising: - a vacuum chamber; - a load lock forming an interface between the vacuum chamber and an ambient environment; - a stage apparatus configured to receive the object from the load lock and displace the object inside the vacuum chamber; wherein the vacuum chamber comprises a first parking position and a second parking position for temporarily storing the object.
Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Van Der Woord, Ties Wouter
Wondergem, Hendrikus Jan
Zdravkov, Aleksandar Nikolov
Abstract
A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising: at least one membrane layer supported by a planar substrate, wherein the planar substrate comprises an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate, wherein the step of selectively removing the inner region of the planar substrate comprises using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer; such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border comprising the border region of the planar substrate and the first sacrificial layer situated between the border and the membrane layer.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
A combined enrichment and radioisotope production apparatus comprising an electron source arranged to provide an electron beam, the electron source comprising an electron injector and an accelerator, an undulator configured to generate a radiation beam using the electron beam, a molecular stream generator configured to provide a stream of molecules which is intersected by the radiation beam, a receptacle configured to receive molecules or ions selectively received from the stream of molecules, and a target support structure configured to hold a target upon which the electron beam is incident in use.
G21G 1/12 - Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation, or particle bombardment, e.g. producing radioactive isotopes outside of nuclear reactors or particle accelerators by electromagnetic irradiation, e.g. with gamma or X-rays
B01D 59/48 - Separation by mass spectrography using electrostatic and magnetic fields
An apparatus (200) comprising: a first gripping member (202) comprising a first magnetic element (204) and moveable between a first position and a second position; a first biasing member (210) configured to bias the first gripping member toward the first position; and a second magnetic element (214) selectively operable in a first mode, in which the second magnetic element interacts with the first magnetic element to overcome the first biasing member and move the first gripping member to the second position, and a second mode, in which the second magnetic element does not overcome the first biasing member, such that the first gripping member rests in the first position.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
G03F 1/68 - Preparation processes not covered by groups
B65G 47/86 - Star-shaped wheels or devices having endless travelling belts or chains, the wheels or devices being equipped with article-engaging elements the article-engaging elements being grippers
A pellicle comprising a core comprising a material other than silicon carbide, a silicon carbide adhesion layer, and a ruthenium capping layer, the ruthenium capping layer being in contact with the silicon carbide adhesion layer. Also described is a method of preparing a pellicle comprising the steps of: (i) providing a pellicle core; (ii) providing a silicon carbide adhesion layer on the pellicle core; and (iii) providing a ruthenium capping layer in contact with the silicon carbide adhesion layer. Also provided is the use of silicon carbide as an adhesion layer in an EUV pellicle as well as an assembly.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
A wafer comprising a mask on one face and at least one layer on the opposite face, wherein the mask comprises at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle comprising the steps of: providing a wafer comprising a mask on one face and at least one layer on the opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle comprising the steps of: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may comprise a metal nitride layer.
A pellicle comprising a metal oxysilicide layer. Also disclosed in a pellicle comprising a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. Also disclosed is a method of manufacturing a pellicle for a lithographic apparatus, said method comprising: providing a metal oxysilicide layer, a lithographic assembly (LA) comprising a pellicle (15) comprising a metal oxysilicide layer, and the use of a pellicle comprising a metal oxysilicide layer in a lithographic apparatus.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
A pellicle for a lithographic apparatus, wherein the pellicle comprises nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus comprising at least one compensating layer selected and configured to counteract changes in the transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Van Der Zande, Willem Joan
Van Zwol, Pieter-Jan
Vermeulen, Johannes Petrus Martinus Bernardus
Voorthuijzen, Willem-Pieter
Wondergem, Hendrikus Jan
Zdravkov, Alexandar Nikolov
Abstract
The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
A membrane assembly (80) for EUV lithography, the membrane assembly comprising: a planar membrane (40); a border (81) configured to hold the membrane; and a frame assembly (50) connected to the border and configured to attach to a patterning device (MA) for EUV lithography; wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
G03F 1/66 - Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine
A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Zdravkov, Aleksandar Nikolov
Abstract
Methods of manufacturing a membrane assembly are disclosed. In one arrangement, a stack comprises a planar substrate and at least one membrane layer. The planar substrate comprises an inner region, a border region around the inner region, a bridge region around the border region and an edge region around the bridge region. The inner region and a first portion of the bridge region are selectively removed. The membrane assembly after removal comprises: a membrane formed from the at least one membrane layer, a border holding the membrane, the border formed from the border region of the planar substrate, an edge section around the border, the edge section formed from the edge region of the planar substrate, a bridge between the border and the edge section, the bridge formed from the at least one membrane layer and a second portion of the bridge region of the planar substrate. The method further comprises separating the edge section from the border by cutting or breaking the bridge.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
33.
RADIOISOTOPE PRODUCTION SYSTEM USING AN ELECTRON BEAM SPLITTER
A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).
G21G 1/12 - Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation, or particle bombardment, e.g. producing radioactive isotopes outside of nuclear reactors or particle accelerators by electromagnetic irradiation, e.g. with gamma or X-rays
G21K 5/04 - Irradiation devices with beam-forming means
G21K 5/08 - Holders for targets or for objects to be irradiated
G21K 5/10 - Irradiation devices with provision for relative movement of beam source and object to be irradiated
A method for manufacturing a membrane assembly (80) for EUV lithography, the method comprising: providing a stack (40) comprising a membrane layer (45) between a supporting substrate (41) and an attachment substrate (51), wherein the supporting substrate comprises an inner region and a first border region; processing the stack, including selectively removing the inner region of the supporting substrate, to form a membrane assembly comprising: a membrane (45) formed from at least the membrane layer; and a support (81) holding the membrane, the support formed at least partially from the first border region of the supporting substrate. The attachment substrate can be bonded to the rest of the stack.
B82Y 40/00 - Manufacture or treatment of nanostructures
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
35.
A METHOD OF MANUFACTURING A PELLICLE FOR A LITHOGRAPHIC APPARATUS, A PELLICLE FOR A LITHOGRAPHIC APPARATUS, A LITHOGRAPHIC APPARATUS, A DEVICE MANUFACTURING METHOD, AN APPARATUS FOR PROCESSING A PELLICLE, AND A METHOD FOR PROCESSING A PELLICLE
Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Van Der Zande, Willem Joan
Van Zwol, Pieter-Jan
Vermeulen, Johannes Petrus Martinus Bernardus
Vles, David Ferdinand
Voorthuijzen, Willem-Pieter
Abstract
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer (2) on a planar surface (4) of a substrate (6). The substrate comprises a first substrate portion and a second substrate portion (12). The method further comprises removing the first substrate portion to form a freestanding membrane (14) from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.
Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Abstract
A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the step of selectively removing the inner region of the planar substrate.
A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
G03F 1/00 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/66 - Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/00 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material thereof
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/00 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 1017 cm-3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.
44.
MEMBRANES FOR USE WITHIN A LITHOGRAPHIC APPARATUS AND A LITHOGRAPHIC APPARATUS COMPRISING SUCH A MEMBRANE
Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 1017 cm-3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.
45.
MEMBRANES FOR USE WITHIN A LITHOGRAPHIC APPARATUS AND A LITHOGRAPHIC APPARATUS COMPRISING SUCH A MEMBRANE
Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 1017 cm-3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.
patents
