Abstract

A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22B 9/20 - Arc remelting
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation

Abstract

In various embodiments, a metal alloy resistant to aqueous corrosion consists essentially of or consists of niobium with additions of tungsten, molybdenum, and one or both of ruthenium and palladium.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• B33Y 70/00 - Materials specially adapted for additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• C22C 1/02 - Making non-ferrous alloys by melting
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B23K 26/342 - Build-up welding
• F28F 19/06 - Preventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of metal
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 34/24 - Obtaining niobium or tantalum

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H10N 60/20 - Permanent superconducting devices
• H10N 60/85 - Superconducting active materials
• H01B 12/06 - Films or wires on bases or cores

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01B 12/06 - Films or wires on bases or cores
• H10N 60/20 - Permanent superconducting devices
• H10N 60/85 - Superconducting active materials
• H10N 60/01 - Manufacture or treatment

Abstract

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

IPC Classes  ?

• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• C22F 1/04 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
• C22F 1/14 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
• C21D 1/00 - General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
• C21D 9/00 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/786 - Thin-film transistors
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
• C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
• C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
• B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
• B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
• B32B 15/02 - Layered products essentially comprising metal in a form other than a sheet, e.g. wire, particles
• B32B 15/18 - Layered products essentially comprising metal comprising iron or steel
• C03C 17/40 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
• C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal

Abstract

In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G02F 1/1362 - Active matrix addressed cells
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• G02F 1/1333 - Constructional arrangements
• C25D 11/02 - Anodisation
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/14 - Permanent superconductor devices
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof

Abstract

A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22B 34/24 - Obtaining niobium or tantalum
• C22B 9/20 - Arc remelting
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation

Abstract

A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.

IPC Classes  ?

• C23C 14/34 - Sputtering
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B22F 3/18 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor by using pressure rollers
• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B21B 1/22 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling bands or sheets of indefinite length
• B21B 39/04 - Lifting or lowering work for conveying purposes, e.g. tilting tables arranged immediately in front of or behind the pass

Abstract

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

IPC Classes  ?

• C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
• C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
• C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• C22F 1/04 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
• C22F 1/14 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
• C21D 1/00 - General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
• C21D 9/00 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/786 - Thin-film transistors
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
• B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
• B32B 15/02 - Layered products essentially comprising metal in a form other than a sheet, e.g. wire, particles
• B32B 15/18 - Layered products essentially comprising metal comprising iron or steel
• C03C 17/40 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
• C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01L 39/14 - Permanent superconductor devices
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof

Abstract

In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• G02F 1/1362 - Active matrix addressed cells
• C25D 11/02 - Anodisation
• G02F 1/1333 - Constructional arrangements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/14 - Permanent superconductor devices
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof

Abstract

In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• C25D 11/02 - Anodisation
• G02F 1/1333 - Constructional arrangements
• G02F 1/1362 - Active matrix addressed cells
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/786 - Thin-film transistors

Abstract

In various embodiments, superconducting wires feature assemblies of clad composite filaments and/or stabilized composite filaments embedded within a wire matrix. The wires may include one or more stabilizing elements for improved mechanical properties.

IPC Classes  ?

• H01B 12/00 - Superconductive or hyperconductive conductors, cables or transmission lines
• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/14 - Permanent superconductor devices
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof
• B21C 3/04 - Dies; Selection of material therefor; Cleaning thereof with non-adjustable section
• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G02F 1/1362 - Active matrix addressed cells
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• C25D 11/02 - Anodisation
• G02F 1/1333 - Constructional arrangements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01L 39/14 - Permanent superconductor devices
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/14 - Permanent superconductor devices
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof

Abstract

A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22B 34/24 - Obtaining niobium or tantalum
• C22B 9/20 - Arc remelting
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation

Abstract

In various embodiments, a metal alloy resistant to aqueous corrosion consists essentially of or consists of niobium with additions of tungsten, molybdenum, and one or both of ruthenium and palladium.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• B33Y 70/00 - Materials specially adapted for additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• C22C 1/02 - Making non-ferrous alloys by melting
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B23K 26/342 - Build-up welding
• F28F 19/06 - Preventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of metal
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 34/24 - Obtaining niobium or tantalum
• B33Y 10/00 - Processes of additive manufacturing

Abstract

In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• C25D 11/02 - Anodisation
• G02F 1/1333 - Constructional arrangements
• G02F 1/1362 - Active matrix addressed cells
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01L 39/14 - Permanent superconductor devices
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof

Abstract

A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through, thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.

IPC Classes  ?

• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B22F 3/18 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor by using pressure rollers
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• C23C 14/34 - Sputtering
• B21B 1/22 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling bands or sheets of indefinite length
• B21B 39/04 - Lifting or lowering work for conveying purposes, e.g. tilting tables arranged immediately in front of or behind the pass

Abstract

A method for making a sputtering target including steps of encapsulating and hot isostatically pressing at least one mass of metal powder (e.g., tantalum), having a particle size ranging from about 10 to about 1000 μm, with at least about 10 percent by weight of particles having a particle size greater than about 150 μm (for example, about 29 to about 56 percent (e.g., about 35 to about 47 percent) by weight of the particles in the at least one mass of metal powder having a particle size that is larger than 150 microns, but below about 250 μm), for defining at least a portion of a sputtering target body, having an essentially theoretical random and substantially uniform crystallographic texture.

IPC Classes  ?

• C23C 14/34 - Sputtering
• C23C 14/14 - Metallic material, boron or silicon
• B22F 3/12 - Both compacting and sintering
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B22F 3/15 - Hot isostatic pressing
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
• B22F 3/02 - Compacting only

Abstract

In various embodiments, superconducting wires feature assemblies of clad composite filaments and/or stabilized composite filaments embedded within a wire matrix. The wires may include one or more stabilizing elements for improved mechanical properties.

IPC Classes  ?

• H01B 12/10 - Multi-filaments embedded in normal conductors
• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• B21C 3/04 - Dies; Selection of material therefor; Cleaning thereof with non-adjustable section
• H01L 39/14 - Permanent superconductor devices
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22B 9/20 - Arc remelting
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 34/24 - Obtaining niobium or tantalum

Abstract

In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G02F 1/1362 - Active matrix addressed cells
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• C25D 11/02 - Anodisation
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• G02F 1/1333 - Constructional arrangements

Abstract

In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G02F 1/1333 - Constructional arrangements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• C25D 11/02 - Anodisation
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• G02F 1/1362 - Active matrix addressed cells

Abstract

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

IPC Classes  ?

• B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/66 - Types of semiconductor device
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/786 - Thin-film transistors
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• C21D 9/00 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
• C21D 1/00 - General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
• C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/14 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
• C22F 1/04 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
• B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
• C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
• C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
• B32B 15/02 - Layered products essentially comprising metal in a form other than a sheet, e.g. wire, particles
• B32B 15/18 - Layered products essentially comprising metal comprising iron or steel
• C03C 17/40 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
• C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal

Abstract

In various embodiments, a metal alloy resistant to aqueous corrosion consists essentially of or consists of niobium with additions of tungsten, molybdenum, and one or both of ruthenium and palladium.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22C 27/00 - Alloys based on rhenium or a refractory metal not mentioned in groups or
• F28F 21/08 - Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• B33Y 70/00 - Materials specially adapted for additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• C22C 1/02 - Making non-ferrous alloys by melting
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B23K 26/342 - Build-up welding
• F28F 19/06 - Preventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of metal
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 34/24 - Obtaining niobium or tantalum
• B33Y 10/00 - Processes of additive manufacturing

Abstract

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

IPC Classes  ?

• H01B 12/00 - Superconductive or hyperconductive conductors, cables or transmission lines
• H01L 39/14 - Permanent superconductor devices
• H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof
• H01B 12/10 - Multi-filaments embedded in normal conductors
• H01B 12/06 - Films or wires on bases or cores
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material

Abstract

A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B21B 1/22 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling bands or sheets of indefinite length
• B22F 3/18 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor by using pressure rollers
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• C23C 14/34 - Sputtering
• B21B 39/04 - Lifting or lowering work for conveying purposes, e.g. tilting tables arranged immediately in front of or behind the pass

Abstract

In various embodiments, a metal alloy resistant to aqueous corrosion consists essentially of or consists of niobium with additions of tungsten, molybdenum, and one or both of ruthenium and palladium.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22C 27/00 - Alloys based on rhenium or a refractory metal not mentioned in groups or
• F28F 21/08 - Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• B33Y 70/00 - Materials specially adapted for additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• C22C 1/02 - Making non-ferrous alloys by melting
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B23K 26/342 - Build-up welding
• F28F 19/06 - Preventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of metal
• B33Y 10/00 - Processes of additive manufacturing

Abstract

A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 9/20 - Arc remelting
• C22B 34/24 - Obtaining niobium or tantalum

Abstract

A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

IPC Classes  ?

• C22B 34/24 - Obtaining niobium or tantalum
• C22B 34/20 - Obtaining niobium, tantalum or vanadium
• C22B 34/00 - Obtaining refractory metals
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 9/20 - Arc remelting
• C22C 27/02 - Alloys based on vanadium, niobium or tantalum

Abstract

A method for making a sputtering target including steps of encapsulating and hot isostatically pressing at least one mass of metal powder (e.g., tantalum), having a particle size ranging from about 10 to about 1000 μm, with at least about 10 percent by weight of particles having a particle size greater than about 150 μm (for example, about 29 to about 56 percent (e.g., about 35 to about 47 percent) by weight of the particles in the at least one mass of metal powder having a particle size that is larger than 150 microns, but below about 250 μm), for defining at least a portion of a sputtering target body, having an essentially theoretical random and substantially uniform crystallographic texture.

IPC Classes  ?

• C23C 14/34 - Sputtering
• B22F 3/02 - Compacting only
• B22F 3/15 - Hot isostatic pressing
• C23C 14/14 - Metallic material, boron or silicon
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
• B22F 3/12 - Both compacting and sintering
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• B22F 3/10 - Sintering only

Abstract

A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.

IPC Classes  ?

• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B21B 1/22 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling bands or sheets of indefinite length
• B22F 3/18 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor by using pressure rollers
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• C23C 14/34 - Sputtering
• B21B 39/04 - Lifting or lowering work for conveying purposes, e.g. tilting tables arranged immediately in front of or behind the pass

Abstract

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.

IPC Classes  ?

• C23C 14/34 - Sputtering
• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• C23C 24/04 - Impact or kinetic deposition of particles
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/14 - Metallic material, boron or silicon
• C23C 4/134 - Plasma spraying

Abstract

In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

IPC Classes  ?

• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01L 29/66 - Types of semiconductor device
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• H01L 29/49 - Metal-insulator semiconductor electrodes

Abstract

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

IPC Classes  ?

• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• C22F 1/04 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
• C22F 1/14 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
• C21D 1/00 - General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
• C21D 9/00 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
• H01L 29/66 - Types of semiconductor device
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/786 - Thin-film transistors
• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

Abstract

In various embodiments, protective layers are bonded to a steel layer, overlapped, and at least partially covered by a layer of unmelted metal powder produced by cold spray.

IPC Classes  ?

• B23K 33/00 - Specially-profiled edge portions of workpieces for making soldering or welding connections; Filling the seams formed thereby
• B23K 31/02 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to soldering or welding
• C23C 24/04 - Impact or kinetic deposition of particles
• B32B 38/08 - Impregnating

Abstract

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

IPC Classes  ?

• B05D 1/02 - Processes for applying liquids or other fluent materials performed by spraying
• C23C 4/12 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
• C23C 14/34 - Sputtering
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties

Abstract

In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article.

IPC Classes  ?

• B22F 5/10 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of articles with cavities or holes, not otherwise provided for in the preceding subgroups
• C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
• C30B 15/10 - Crucibles or containers for supporting the melt
• B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
• B22F 3/04 - Compacting only by applying fluid pressure
• B22F 3/10 - Sintering only
• B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
• B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• C30B 29/20 - Aluminium oxides

Abstract

Refractory metal powders are dehydrided in a device which includes a preheat chamber for retaining the metal powder fully heated in a hot zone to allow diffusion of hydrogen out of the powder. The powder is cooled in a cooling chamber for a residence time sufficiently short to prevent re-absorption of the hydrogen by the powder. The powder is consolidated by impact on a substrate at the exit of the cooling chamber to build a deposit in solid dense form on the substrate.

IPC Classes  ?

• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
• C23C 4/08 - Metallic material containing only metal elements
• B05D 1/08 - Flame spraying
• H05H 1/52 - Generating plasma using exploding wires or spark gaps
• H05H 1/26 - Plasma torches
• B05D 1/12 - Applying particulate materials
• B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
• B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
• C23C 24/04 - Impact or kinetic deposition of particles
• B22F 9/20 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from solid metal compounds

Abstract

In various embodiments, protective layers are bonded to a steel layer and connected by a layer of unmelted metal powder produced by cold spray.

IPC Classes  ?

• B23K 33/00 - Specially-profiled edge portions of workpieces for making soldering or welding connections; Filling the seams formed thereby
• B23K 31/02 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to soldering or welding

Abstract

Refractory metal powders are dehydrided in a device which includes a preheat chamber for retaining the metal powder fully heated in a hot zone to allow diffusion of hydrogen out of the powder. The powder is cooled in a cooling chamber for a residence time sufficiently short to prevent re-absorbtion of the hydrogen by the powder. The powder is consolidated by impact on a substrate at the exit of the cooling chamber to build a deposit in solid dense form on the substrate.

IPC Classes  ?

• B05D 1/12 - Applying particulate materials
• B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
• B05D 1/08 - Flame spraying
• C23C 4/08 - Metallic material containing only metal elements
• H05H 1/24 - Generating plasma

Abstract

In various embodiments, low-oxygen metal powder is produced by heating a metal powder to a temperature at which an oxide of the metal powder becomes thermodynamically unstable and applying a pressure to volatilize the oxygen.

IPC Classes  ?

• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
• B22F 9/16 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes
• B05D 1/12 - Applying particulate materials

Abstract

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a refractory metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

IPC Classes  ?

• B05D 1/02 - Processes for applying liquids or other fluent materials performed by spraying

Abstract

In various embodiments, metallic products are formed by alloying niobium with at least one of yttrium, aluminum, hafnium, titanium, zirconium, thorium, lanthanum, or cerium and processing the alloy.

IPC Classes  ?

• C22B 34/24 - Obtaining niobium or tantalum
• C22B 9/20 - Arc remelting
• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• C23C 14/34 - Sputtering
• H05H 7/20 - Cavities; Resonators with superconductive walls
• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
• B22F 3/02 - Compacting only
• B22F 3/14 - Both compacting and sintering simultaneously
• B22F 3/24 - After-treatment of workpieces or articles

Abstract

In various embodiments, protective layers are bonded to a steel layer and connected by a layer of unmelted metal powder produced by cold spray.

IPC Classes  ?

• B23K 31/00 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups
• B23K 31/02 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to soldering or welding

Abstract

In accordance with various embodiments, plates are formed via a plurality of upset-forging and forging-back cycles followed by a plurality of rolling passes.

IPC Classes  ?

• B21D 22/00 - Shaping without cutting, by stamping, spinning, or deep-drawing

Abstract

In various embodiments, a metallic structure includes first and second clad structures each comprising a protective layer disposed over a steel layer, a joint joining the steel layers of first and second clad structures, and, directly connecting the protective layers of the first and second clad structures, a layer of metal powder disposed in contact with (i) the joint, (ii) the protective layers of the first and second clad structures, and (iii) a portion of at least one of the steel layers proximate the joint.

IPC Classes  ?

• B23K 33/00 - Specially-profiled edge portions of workpieces for making soldering or welding connections; Filling the seams formed thereby
• B23K 31/02 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to soldering or welding

Abstract

In various embodiments, a method of joining clad structures includes providing first and second clad structures each comprising a protective layer disposed only partially over a steel layer such that an edge region of the steel layer is exposed, joining the first and second clad structures at their respective edge regions, thereby forming a joint, and cold spraying a metal powder over and in contact with (i) the joint, (ii) the edge regions, and (iii) the protective layers of the first and second clad structures, thereby directly connecting the protective layers of the first and second clad structures with a layer of unmelted metal powder.

IPC Classes  ?

• B23K 33/00 - Specially-profiled edge portions of workpieces for making soldering or welding connections; Filling the seams formed thereby
• B23K 31/02 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to soldering or welding

Abstract

A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

IPC Classes  ?

• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation
• C22B 9/16 - Remelting metals
• C22B 9/00 - General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
• C22B 34/24 - Obtaining niobium or tantalum
• C22B 34/20 - Obtaining niobium, tantalum or vanadium
• C22C 27/02 - Alloys based on vanadium, niobium or tantalum

Abstract

−7 to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.

IPC Classes  ?

• B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties

Abstract

Three dimensionally large metallic structures comprised of submicron grain sizes are produced by a process which includes directing a supersonic powder jet against a substrate such that the powder adheres to the substrate and to itself to form a dense cohesive deposit. The powder jet may be comprised of refractory metal powders. The powder may be deposited by a supersonic jet and may be extruded by Equi channel angular extrusion.

IPC Classes  ?

• B05D 1/12 - Applying particulate materials

Abstract

Refractory metal powders are dehydrided in a device which includes a preheat chamber for retaining the metal powder fully heated in a hot zone to allow diffusion of hydrogen out of the powder. The powder is cooled in a cooling chamber for a residence time sufficiently short to prevent re-absorption of the hydrogen by the powder. The powder is consolidated by impact on a substrate at the exit of the cooling chamber to build a deposit in solid dense form on the substrate.

IPC Classes  ?

• B22F 3/12 - Both compacting and sintering

Abstract

Methods and apparatus for rolling metal sheet or plate are provided. The method comprises the step of feeding the metal plate or sheet into a rolling mill at an angle. The apparatus comprises a rolling mill having a tilted feed table, or an apron upon which a transfer table and tilted feed table can rest. Through-thickness gradient and shear texture can be improved using the methods and apparatus of the invention.

IPC Classes  ?

• B21B 39/20 - Revolving, turning-over, or like manipulation of work

Abstract

A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• B21B 41/02 - Returning work to repeat the pass or passes
• B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
• B32B 15/00 - Layered products essentially comprising metal
• B32B 5/14 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by a layer differing constitutionally or physically in different parts, e.g. denser near its faces
• B21B 1/22 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling bands or sheets of indefinite length
• B22F 3/18 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor by using pressure rollers
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• C23C 14/34 - Sputtering
• B21B 39/04 - Lifting or lowering work for conveying purposes, e.g. tilting tables arranged immediately in front of or behind the pass

Abstract

In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.

IPC Classes  ?

• B05D 1/12 - Applying particulate materials

Abstract

A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Jr, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

IPC Classes  ?

• C22C 27/02 - Alloys based on vanadium, niobium or tantalum
• C22B 34/24 - Obtaining niobium or tantalum
• C22B 9/20 - Arc remelting
• C22B 9/22 - Remelting metals with heating by wave energy or particle radiation

Abstract

wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

IPC Classes  ?

• H01B 1/00 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
• H01B 1/12 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances

Abstract

Computer-implemented processes for making refractory metal pots, including: cutting an a refractory metal ingot into a first workpiece; subjecting the first workpiece to multiple upset forgings, annealings in a vacuum or inert gas to a temperature sufficiently high to cause at least partial recrystallization, forging-backs, and rollings to form a plate; wherein the forged, annealed workpiece undergoes a reduction in thickness after at least one rolling pass and is turned between at least one pass, to form the plate; and deep drawing the plate to form a pot; wherein dimensions of at least one workpiece or plate suitable for processing into a pot are pre-determined with a computer-implemented finite element modeling assessment method.

IPC Classes  ?

• B21D 22/00 - Shaping without cutting, by stamping, spinning, or deep-drawing

Abstract

The method provides a fully recrystalized niobium wrought product with a grain size finer that ASTM 5, that can be used to make deep drawn cups and sputtering targets.

IPC Classes  ?

• C22B 9/20 - Arc remelting

Abstract

A process to chemically refine and consolidate tantalum, niobium and their alloys to a fabricated product of net shape or near-net shape with higher throughput, more consistency, and lower manufacturing costs compared to prior art routes or rejuvenate damaged and deteriorated refractory metal parts. Powder metal is loaded into hoppers to be fed into laser forming/melting equipment. A suitable substrate is loaded into a laser forming/melting chamber onto which the powder will be deposited and consolidated in a point-scan process. As the powder is fed onto successive points of the surface of the substrate in linear traces, the laser is used to heat and partially melt the substrate and completely melt the powder. A combined deposition and melt beam traces the substrate surface repeatedly over a selected area to build up a dense coating of controlled microstructure in multiple layers. A fully dense deposit is built up that becomes the desired shape.

IPC Classes  ?

• B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
• B23K 26/32 - Bonding taking account of the properties of the material involved

Goods & Services

tantalum [ and niobium ] metals and alloys of tantalum [ and niobium, ] all in the form of powders, ingots, disks, rods, wire, strips, bars, plates, sheets, foils, tubing, and preforms sputtering cathodes [ vacuum furnace components; namely, heat shields, sintering trays and heating elements, heat exchangers, chemical processing pump and valve linings for corrosive liquids, thermowells, furnace crucibles, evaporation sources; namely, evaporation boats, and glass-lined vessel patch kits consisting of tantalum disks, studs and nuts ]