In at least one embodiment, the power semiconductor device (1) comprises
a semiconductor body (2), and
a protection layer (3) at the semiconductor body (2), wherein
the protection layer (3) comprises a material having a surface energy of at most 0.1 mJ/m2, and
the protection layer (3) comprises a geometric structuring (33) having a feature size (F) of at least 0.04 μm and of at most 0.1 mm, seen in top view of the protection layer (3).
A semiconductor device with a semiconductor body is specified, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface. The semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction, wherein the first semiconductor layer is more heavily doped than the second semiconductor layer. A side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction comprises a first partial region and a second partial region, wherein the first partial region and the second partial region delimit the first semiconductor layer in regions.
A power semiconductor device (1) comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22), a trench (4) extending from the first main surface (21) into the semiconductor body (2) in the vertical direction, and an insulated trench gate electrode (3) that is formed on the first main surface (21) and extends into the trench (4) is specified, wherein the trench (4) is subdivided along a main extension direction of the trench (4) in a plurality of segments (41) and the insulated trench gate electrode (3) continuously extends over the plurality of segments (41).
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
4.
A WINDING, A TRANSFORMER AND A TRANSFORMER ARRANGEMENT
A winding for a phase winding of a transformer. The winding has coil turns around a coil axis. The winding is adapted to transform voltage in a transformer at a predetermined frequency, when the transformer is operating. The winding is excited by a mechanical load having a main frequency corresponding to the predetermined frequency multiplied by two and has vibration modes. The combination of load and vibration modes results in a vibration of the winding. The winding has a set of vibration modes. Each vibration mode has a vibration mode frequency, wherein a main contributing vibration mode of the set of vibration modes is the vibration mode resulting in the largest acoustic power of the vibration modes. The winding is excited by the load and a stiffness difference between a first winding portion stiffness and a second winding portion stiffness is such that the acoustic power is minimized at said main frequency.
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
A contact unit for an on-load tap changer comprises a connector body and a contact holder coupled to each other, wherein the connector body is configured to connect the contact holder to a contact of the on-load tap changer. The contact unit further comprises a contact element coupled to the contact holder and configured to make electrical contact to a contact element of a contact device for the on-load tap changer. The contact unit further comprises drive and guiding means coupled to the contact holder such that the contact element is movable driven and linearly guided in a direction away from the connector body.
H01H 9/00 - ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES - Details of switching devices, not covered by groups
H01H 1/50 - Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
6.
SWITCHING SYSTEM FOR AN ON-LOAD TAP CHANGER, ON-LOAD TAP CHANGER AND METHOD FOR SWITCHING A TAP CONNECTION OF AN ON-LOAD TAP CHANGER
A switching system for an on-load tap changer includes a rotatable ring stack, wherein the rotatable ring stack is part of an internal Geneva mechanism and a drive system. The ring stack includes a first current carrier ring and a second current carrier ring each of which is selectively electrically coupleable to one of a plurality of contact elements of the tap changer, and a Geneva ring. The drive system includes a driving wheel, wherein the Geneva ring is mechanically coupleable with the driving wheel, such that the Geneva ring is rotatable by the driving wheel, and the first and the second current carrier rings each are coupled with the Geneva ring such that a rotation of Geneva ring causes a joint rotation of the first and the second current carrier ring.
The invention relates to an insulator spacer (12) for an insulator (10) of a high or medium voltage device, wherein the insulator spacer (12) comprises a core structure (20) and a shell structure (22), wherein the core structure (20) is at least partly covered by the shell structure (22), wherein the core structure (20) consists of a first material comprising a thermoplastic, and wherein the shell structure (22) consists of a second material comprising a thermoplastic, and wherein an interface (24) is formed between the core structure (20) and the shell structure (22) and wherein the insulator spacer (12) is produced by multi-material injection molding of the first material and the second material, such that the first material is used in the multi-material injection molding process to form the core structure (20) and the second material is used in the multi-material injection molding process to form the shell structure (20) of the insulator spacer (12). Furthermore, the invention relates to an insulator (10), to a gas insulated high or medium voltage device, to a method for producing the above insulator spacer (12).
H02G 5/06 - Totally-enclosed installations, e.g. in metal casings
H01B 3/47 - Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes fibre-reinforced plastics, e.g. glass-reinforced plastics
A transformer (200) comprising a core (201), such as, for example, a single-phase core, that comprises a plurality of wound limbs (205a, 205b), primary and secondary concentric windings (202, 204, 212, 214) formed on each limb of the plurality of wound limbs (205a, 205b), and at least one tertiary concentric winding (206) formed on fewer than all limbs of the plurality of wound limbs.
There is disclosed herein an energy storage system (ESS 100) comprising an energy storage circuit (122) comprising a string (111) of interconnected energy storage units (110) configured to store electrical energy and provide power to a power grid using said stored electrical energy. The ESS further comprises an auxiliary module (112) configured to provide auxiliary functions for at least one of the plurality of energy storage units (110), and an auxiliary power supply circuit (124) for providing power to the auxiliary module (112) from a grounded power source (126). The auxiliary power supply circuit (124) is configured to galvanically isolate the energy storage circuit (122) from the grounded power source (126), thereby preventing electrical arcing between the ESS (100), which may be at a high voltage, and ground at the grounded power source (126).
H02J 11/00 - Circuit arrangements for providing service supply to auxiliaries of stations in which electric power is generated, distributed or converted
H02J 3/28 - Arrangements for balancing the load in a network by storage of energy
H02J 3/32 - Arrangements for balancing the load in a network by storage of energy using batteries with converting means
H02J 50/10 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
H02J 50/12 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
10.
METHOD OF ATTACHING A TERMINAL TO A METAL SUBSTRATE STRUCTURE FOR A SEMICONDUCTOR POWER MODULE AND SEMICONDUCTOR POWER MODULE
A method for attaching a terminal (4) to an insulated metal substrate structure (3) for a semiconductor power module (10) comprises providing at least one terminal (4) and providing the metal substrate structure (3) with a metal top layer (17), a metal bottom layer (19) and an isolating resin layer (18) arranged between the metal top layer (17) and the metal bottom layer (19). The method further comprises providing and coupling a sinter layer (5) to the metal top layer (17) and/or the at least one terminal (4) to form a sintering area for the at least one terminal (4). The method further comprises coupling the at least one terminal (4) to the metal top layer (17) by means of sintering with a sinter tool (6) such that the sinter layer (5) is arranged between the metal top layer (17) and the at least one terminal (4) and connects the at least one terminal (4) to the metal top layer (17).
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
The present disclosure relates to a high voltage bypass device (10), comprising a cavity (13), a trigger element arranged in the cavity (13), a reservoir (17) filled with a conductive, flowable material (18), and a shutter (19) separating the cavity (13) and the reservoir (17). The trigger element is connected to a first terminal (11) and a second terminal (12) of the high voltage bypass device (10). The shutter (19) is configured to open a passage between the cavity (13) and the reservoir (17) in case the trigger element is triggered by an overvoltage condition, such that the conductive, flowable material (18) at least partially fills the cavity (13), thereby forming a conductive path from the first terminal (11) to the second terminal (12). The present disclosure further relates to a voltage source converter (VSC), in particular a modular multi-cell converter (40), and an operating method for a high voltage bypass device (10).
H01H 29/22 - Switches having at least one liquid contact operated by tilting contact-liquid container wherein contact is made and broken between liquid and solid
H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
H02H 7/12 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for rectifiers for static converters or rectifiers
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 7/483 - Converters with outputs that each can have more than two voltage levels
12.
POWER MODULE AND METHOD FOR PRODUCING A POWER MODULE
According to an embodiment, the power module (100) comprises a power semiconductor device (1) and a connection element (2) for electrically connecting the power semiconductor device. Furthermore, the arrangement comprises a sensing element (3) for measuring a measurand. A bond section (21) of the connection element is bonded to and electrically connected with the power semiconductor device. The sensing element is mounted on the connection element and spaced from the bond section.
G01K 1/14 - Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
G01K 1/16 - Special arrangements for conducting heat from the object to the sensitive element
G01K 7/16 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements
G01K 7/02 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using thermoelectric elements, e.g. thermocouples
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
The present disclosure relates to a system (10) comprising a transformer (12) which comprises at least one first winding (18) wound around at least one core (14) and at least one second (19) winding wound around the at least one first winding (18). The system (10) further comprises at least one voltage sensor (34) configured and arranged to sense a voltage through the at least one second winding (19) by capacitive coupling.
A bent unit and a gas-insulated transmission line having the same are provided according to the present disclosure. The bent unit includes: a bent housing including a cylindrical first housing section and a cylindrical second housing section, the first housing section and the second housing section being connected with each other at an angle α; a tubular bent conductor arranged in the bent housing; and an insulator arranged in the bent housing to support the bent conductor. The bent conductor includes a straight conductor section and a bent conductor section which are formed separately and connected with each other. The straight conductor section extends along the first housing section. The bent conductor section extends along the first housing section and the second housing section and is bent to have the angle α. The bent unit and the gas-insulated transmission line according to the present disclosure can easily realize the desired change of transmission direction, and are simple in structure and easy to manufacture.
A semiconductor power module (1) comprises a metal substrate structure (10) with a metal top layer (11), a metal bottom layer (13), and a dielectric layer (12) in between. The semiconductor power module (1) further comprises a housing (2) with a top wall (21) and side walls (22) that is coupled to the metal substrate structure (10) such that with respect to a stacking direction (A) there is a predetermined distance (D) between a lower surface (24) of the top wall (21) and an upper surface (14) of the metal top layer (11) adjacent to the side walls (22), respectively. The semiconductor power module (1) further comprises at least one terminal (16) that is arranged inside the housing (2), wherein the at least one terminal (16) is coupled to the lower surface (24) of the top wall (21) on the one hand and coupled to the upper surface (14) of the metal top layer (11) on the other hand. With respect to the stacking direction (A) a length of the at least one terminal (16) is configured in coordination with the distance (D), such that due to the at least one terminal (16) the metal substrate structure (10) is bent in a predetermined manner and comprises a convex shape in interaction with the housing (2) and the at least one terminal (16).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/053 - Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
16.
POWER MODULE AND METHOD FOR MANUFACTURING A POWER MODULE
A half-bridge power module (10) comprises comprising one or more substrates (13, 31, 32) with one or more metallizations (14, 33, 34), at least one high side switching device (11) and at least one low side switching device (12) located on the one or more substrates (13, 31, 32), each of the switching devices (11, 12) comprising a source or emitter contact (3, 3a, 3b) on a first side (4) and a drain or collector contact (5, 5a, 5b) on an opposite second side (6), wherein the source or emitter contact (3, 3a, 3b) of one of the switching devices (11, 12) is oriented towards and electrically connected to one of the metallizations (14, 33, 34) and the drain or collector contact (5, 5a, 5b) of the other one of the switching devices (11, 12) is oriented towards and electrically connected to one of the metallizations (14, 33, 34).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/051 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
An energy storage unit comprising a first unit terminal and a second unit terminal, an energy storage element having a first element terminal and a second element terminal, wherein the second element terminal is connected with the second unit terminal, and a protection circuit comprising a first pyrotechnic switch connected between the first unit terminal and the first element terminal and a second pyrotechnic switch connected between the first unit terminal and the second unit terminal.
SCmpCmp =k1*S11 -(k22 *S22 +k00 *S00 )SCmpCmp S11 S22 S00 k11 , k22 , k00 SCmpCmp SCmpCmp (present)SCmpCmp (previous)(previous)). The difference is determined as a difference between active power parts and a difference between reactive power parts.
H02H 3/42 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to product of voltage and current
G01R 31/08 - Locating faults in cables, transmission lines, or networks
H02H 7/26 - Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occurred
19.
APPARATUS AND SYSTEM FOR POWER CONVERSION AND METHOD FOR CONTROLLING THE APPARATUS
An apparatus for power conversion is provided. The apparatus comprises: a plurality of partial power converters (PPCs) (100, 10n), wherein each of the plurality of PPCs (100,..., 10n) comprises three ends (10, 20, 30), the three ends (10, 20, 30) being combined in pairs to form three sets of ends (1-2, 1-3, 2-3), and wherein a first one (SI) of the three sets of ends (1-2, 1-3, 2-3) is connected or connectable to a DC bus (120), and a second one (S2) of the three sets of ends (1-2, 1-3, 2-3) is connectable or connected to a respective power source (110) of a plurality of power sources (110,...,11n).
H02J 7/34 - Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 1/32 - Means for protecting converters other than by automatic disconnection
20.
SEMICONDUCTOR POWER DEVICE, SEMICONDUCTOR POWER SYSTEM AND METHOD FOR COOLING A SEMICONDUCTOR POWER DEVICE
A effective lower flow direction comprises power module (3) and a housing (2) that is arranged on an upper surface (9) of the power module (3) defining an upper flow section (10) for liquid cooling of the power module (3) in between. The upper flow section (10) comprises an inlet (12), an outlet (13) and a given upper flow path (15) in between defining an effective upper flow direction (11). Further, a cooling unit (5) is arranged on the lower surface (9) of the power module (3) defining a lower flow section (20) for liquid cooling of the power module (3) in between. The lower flow section (20) comprises an inlet (22), an outlet (23) and a given lower flow path (25) in between defining an effective lower flow direction (21), such that during operation a coolant flows through the upper and the lower flow section (10, 20) providing a double-sided liquid cooling of the power module (3). The effective upper flow direction (11) is different from the effective lower flow direction (21).
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01B 3/56 - Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances gases
22.
ARRANGEMENT FOR A POWER MODULE, POWER MODULE AND METHOD FOR PRODUCING AN ARRANGEMENT FOR A POWER MODULE
According to an embodiment, the arrangement (100) for a power module comprises an electrically conductive contact area (Al) as well as a first (1) and a second (2) connection element for electrically connecting the contact area (Al). The first connection element is firmly bonded to the contact area (Al) in a first bond region (11) and the second connection element (2) is welded to the first connection element (1) in a second bond region (12) by means of laser welding.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/373 - Cooling facilitated by selection of materials for the device
The present disclosure relates to an enclosure for an electric device in a high voltage electric field, the enclosure comprising at least one top element and at least one corresponding bottom element extending circumferentially from a centre portion, wherein the top and the bottom elements are plate-like elements disposed substantially parallel to each other at a predetermined distance to provide a space therebetween. The top and bottom elements are each electrically connected at one end at the centre portion, and in electrical contact at respective circumferential ends to form at least a portion of the enclosure. The enclosure is at least partially constructed of a conductive material. At least two slots are provided in the enclosure extending from the centre portion to a circumference to separate different portions of the enclosure.
A method for producing a semiconductor device (100) comprises a step of providing a semiconductor body (1) with a mask (3) on the top side (10) of the semiconductor body. A first and a second trench (2) extend from the top side into the semiconductor body. A functional portion (11) is arranged between the trenches. The mask comprises two first sections (31) and a second section (32). In the first sections, the mask is thicker than in the second section. In plan view of the top side, the second section overlaps with the functional portion and the first sections each overlap with one of the trenches. In a further step, a first region (12) of a first conductivity type is formed in the functional portion directly adjacent to the first trench (2). This comprises implanting first-type dopants into the functional portion by using a directed implantation method in which the implantation is done with an implant angle α greater than 0°. In a further step, a second region (13) of a second conductivity type is formed in the functional portion adjacent to the second trench. This comprises implanting second-type dopants into the functional portion by using a directed implantation method in which the implantation is done with an implant angle α smaller than 0°.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A Power module (100) comprises - a first substrate (101) with a first connection point (111), - a second substrate (102) with a second connection point (112), wherein the first connection point (111) and the second connections terminal (112) are electrically connected in parallel to a common terminal (104), - a plurality of power semiconductor chips (103), wherein a first part of the power semiconductor chips (103) is mounted on the first substrate (101) and electrically connected to the first connection point (111), and wherein a second part of the power semiconductor chips (103) is mounted on the second substrate (102) and electrically connected to the second connection point (112), - an oscillation damping device (200), wherein the oscillation damping device (200) is electrically connected between the first substrate (101) and the second substrate (102).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
26.
DEVICE AND METHOD FOR PROTECTING A MEASUREMENT CIRCUIT
A device (20) comprising a suppression unit (10) and a measurement circuit (24), wherein the suppression unit (10) comprises at least two parallel connected protection branches (30) connected between a surge arrester (28) and ground. The at least one protection branch (30) comprises at least one TVS diode (12) and at least one impedance (14), connected in series with the at least one TVS diode (12). The suppression unit (10) is configured to divert leakage current through the measurement circuit (24) and bypass the measurement circuit (24) and lead surge current to ground, during a surge event to protect the measurement circuit (24).
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
G01R 19/25 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
H02H 3/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection - Details with warning or supervision in addition to disconnection, e.g. for indicating that protective apparatus has functioned
27.
DEVICE AND METHOD FOR PROTECTING A HARVESTING CIRCUIT AND/OR ENABLING ENERGY HARVESTING
A device (20) comprising a diversion circuit (10) and a harvesting circuit (24), wherein the diversion circuit (10) comprises at least two parallel connected protection branches (30) connected between a surge arrester (28) and ground. The at least two protection branches (30) comprise at least one TVS device (12) and at least one impedance (14) connected in series with the at least one TVS device (12). The diversion circuit (10) is configured to divert leakage current through the harvesting circuit (24) and bypass the harvesting circuit (24) and lead surge current via the at least one parallel connected protection branch (30) to ground, during a surge event, to protect the measurement circuit (24).
A system (100) and a method (1300) for controlling the system (100) are provided. The system comprises at least one transformer (110) connectable to an electrical power grid (101) for galvanically isolating the system from the electrical power grid and for adapting an input voltage level associated with an alternating current received from the electrical power grid. The system further comprises a converter unit (115) connected to the at least one transformer and configured to convert the received alternating current into a direct current output between a positive pole and a negative pole of the converter unit. The converter unit comprises at least one modular multilevel converter (120) comprising at least two converter branches (130). Each converter branch comprises at least one converter cell (140) and at least one inductor (150). The at least two converter branches include one branch connected from an AC line of the at least one transformer to the positive pole and another branch connected from the AC line of the at least one transformer to the negative pole. The system further comprises an electrolyser unit (160) arranged between the positive pole and the negative pole. The system further comprises a control unit (170) configured to control the direct current output from the converter unit to the electrolyser unit based on a reference value for driving the electrolyser unit.
H02M 5/12 - Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using transformers for conversion of voltage or current amplitude only
H02M 7/483 - Converters with outputs that each can have more than two voltage levels
H02M 7/23 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in parallel
29.
A SWITCH AND AN OVERVOLTAGE PROTECTION SYSTEM FOR A SERIES CAPACITOR BANK
A switch (1) comprising an interruption chamber (2), a first contact (3) electrically connected to a first circuit terminal (4) and a second contact (5) electrically connected to a second circuit terminal (6). Each electrical contact (3, 5) is movable by a respective drive means (9, 10) and the drive means (9, 10) are configured to simultaneously move the electrical contacts (3, 5) from respective first positions (po1, po2) in which the electrical contacts (3, 5) are physically separated, towards respective second positions (pc1, pc2) in which the electrical contacts (3, 5) physically contact each other.
The present disclosure relates to a method for detecting a DC magnetization in a transformer (420) and controlling the transformer, the method comprising: sensing, using at least one vibration sensor, at least one vibration on at least one surface of the transformer or on at least one surface of a component connected to the transformer (S101); measuring the sensed at least one vibration (S102); detecting, based on the measured at least one vibration, the DC magnetization in the transformer (S103); and controlling, based on the detected DC magnetization, the transformer (S104). The present disclosure also relates to a respective device (510)and system (530).
H01F 27/34 - Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
H01F 27/42 - Circuits specially adapted for the purpose of modifying, or compensating for, electric characteristics of transformers, reactors or choke coils
H01F 13/00 - Apparatus or processes for magnetising or demagnetising
31.
REDUCING CLASS IMBALANCE IN MACHINE-LEARNING TRAINING DATASET
Class imbalance in a training dataset may negatively impact the accuracy of a machine- learning model in classifying rare events that are underrepresented in the training dataset. Training datasets comprising time-series data present a unique challenge. Accordingly, resampling techniques for up-sampling and/or down-sampling a training dataset of time series are disclosed. The up-sampling may respect the temporal correlation of time samples in the time series, while generating synthetic time series that mimic the feature values of time series belonging to the minority class. Down-sampling may be used to fine-tune the ratio of time series belonging to the minority class to the time series belonging to the majority class.
An electromagnetic device (10) comprising a magnetic field-generating electric circuit comprising at least one winding (12), and a system (24) configured to monitor a condition of the electromagnetic device (10) and/or to control the electromagnetic device (10). The condition-monitoring and/or control system (24) comprises at least one first device (26) comprising a transmitter/transceiver, and at least one second device (28) comprising a receiver/transceiver, whereby the at least one first device (26) is configured to wirelessly transmit at least one signal (18) to the at least one second device (28). The at least one first device (26) is configured to transmit the at least one signal (18) at a frequency that corresponds to a resonance frequency of the at least one winding (12) of the electromagnetic device (10), whereby the electromagnetic device (10) is thereby configured to be used as a passive repeater for the at least one signal (18) that is transmitted.
H02J 50/80 - Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
33.
POWER SUBMODULE, POWER MODULE AND METHOD FOR PRODUCING A POWER MODULE
The power submodule (200) comprises a power semiconductor device (1) with a top side (10) and a bottom side (12) as well as an electrically isolating body (2) surrounding the power semiconductor device. The power submodule further comprises a top contact element (3) with a terminal region (30) on the top side of the power semiconductor device and an electrically conductive cooling element (6) with a terminal region (60) on the bottom side of the power semiconductor device. The top contact element and the cooling element are in electrical contact with the power semiconductor device. The terminal regions of the top contact element and of the cooling element face away from the power semiconductor device and in opposite directions in order to enable at least two such power submodules to be stacked on top of each other for a serial electrical connection. The cooling element comprises a cooling structure (7) for cooling the power semiconductor device.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
34.
POWER DEVICE AND METHOD FOR ASSEMBLING A POWER DEVICE
According to an embodiment, the power device (100) comprises at least two power semiconductor modules (1) and a carrier (2) having a top side (20) and an opposite bottom side (21). The power semiconductor modules are mounted on the carrier and are thermally connected to the carrier. At least two power semiconductor modules are arranged in an overlapping configuration such that at least one power semiconductor module being mounted on the top side and at least one power semiconductor module being mounted on the bottom side at least partially overlap with each other when seen in plan view of the top side.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The power component (100) comprises a power semiconductor device (1) with a top side (10) and a bottom side (12), an electrically isolating body (2) surrounding the power semiconductor device as well as a first (3) and a second (4) contact element both in electrical contact with the power semiconductor device. The first and the second contact element each have a terminal region (30, 40) for externally electrically contacting the power component via the contact elements. The power component is configured to be operated with the first and second contact element lying on different electrical potentials. The terminal regions of the first and the second contact element are arranged on the same side of the power semiconductor device but at different heights with respect to the top side of the power semiconductor device.
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 25/03 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
elESSESS, to the electrical power grid via the energy storage unit and to adjust a reactive power contribution to the electrical power grid. The control unit (130) configured to control an active power contribution from the hydrogen electrolyser unit and the E-STATCOM based on a reference value.
H02J 3/18 - Arrangements for adjusting, eliminating or compensating reactive power in networks
H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
H02J 3/16 - Circuit arrangements for ac mains or ac distribution networks for adjusting voltage in ac networks by changing a characteristic of the network load by adjustment of reactive power
37.
MANUFACTURING METHOD AND POWER SEMICONDUCTOR DEVICE
In at least one embodiment, the method is for producing a power semiconductor device (1) and comprises the following steps: - providing a semiconductor body (2) based on SiC, - irradiating at least a first portion (21) of a top side (20) of the semiconductor body (2) with low-energy electron radiation (E), and - producing an electrical insulation layer (3) at least in the at least one irradiated first portion (21).
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 21/336 - Field-effect transistors with an insulated gate
38.
INTERRUPTER UNIT FOR GAS-INSULATED HIGH OR MEDIUM VOLTAGE DEVICE AND GAS-INSULATED HIGH OR MEDIUM VOLTAGE DEVICE
The invention relates to an interrupter unit (10) for a gas-insulated high or medium voltage device comprising a first arcing contact (12) and a second arcing contact (14), wherein at least one of the arcing contacts (12,14) is axially movable along a switching axis (16), a nozzle (18), wherein the nozzle (18) comprises a heating channel (20) for guiding an arc extinguishing gas in a flow-guiding direction (22) to an arcing region (24) formed between the first (12) and the second arcing contact (14) during an opening operation of the arcing contacts (12,14), wherein the heating channel (20) comprises at an opening (30) of the heating channel (20) into the arcing region (24) a terminal section (32), where a radial component of the flow-guiding direction (22) is equal to or greater than an axial component of the flow-guiding direction (22), wherein the terminal section (32) is rotationally symmetric around the switching axis (16), and wherein the terminal section (32) comprises a segment (34), in which a cross-section area orthogonal to the flow-guiding direction (22) is con- stant with respect to the flow-guiding direction (22) of the heating channel (20). Furthermore, the invention relates to a gas-insulated high or medium voltage device comprising the above interrupter unit (10).
H01H 33/22 - Selection of fluids for arc-extinguishing
H01H 33/70 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid
H01H 33/91 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts this movement being effected by, or in conjunction with, the contact-operating mechanism the arc-extinguishing fluid being air or gas
39.
POWER MODULE AND METHOD FOR MANUFACTURING A POWER MODULE
A power module (1) comprises one or more substrates (28, 29, 30, 31), at least one high-side switching device (2, 19) and at least one low-side switching device (3, 20) located on one or more of the substrates (28, 29, 30, 31), and at least one high-side auxiliary terminal (5, 7) and at least one low-side auxiliary terminal (6, 8) for controlling and/or monitoring the respective switching device (3, 4, 19, 20), wherein the high-side auxiliary terminal (5, 7) and the low-side auxiliary terminal (6, 8) have the same geometric shapes.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
There is disclosed herein a computer-implemented method for monitoring a converter comprising a plurality of series-connected submodules or an energy storage system (ESS) comprising a plurality of series-connected energy storage units (ESUs). Each submodule or ESU has electrical components arranged in a same circuit topology. The method comprises determining, for each electrical component in a group, a component value for an electrical characteristic, wherein the group comprises a corresponding electrical component from each submodule/ESU, in the plurality of submodules/ESUs, having a same position in the circuit topology of their respective submodule/ESU. The method further comprises determining, for the group of electrical components, a group value for the electrical characteristic. The method then comprises determining a deviation of the component value from the group value, for each electrical component in the group, and determining a health status for an electrical component of the group based on the determined deviation for the electrical component.
A method for determining a type of fault in a power line is provided. The method comprises obtaining voltage and current measurements at a measurement point of the power line. The method further comprises determining transient energies over a first time period for a number of phase-to-ground loops and phase-to-phase loops of the power line, based on the obtained voltage and current measurements. The method further comprises determining transient energy ratios for the phase-to-ground loops and phase-to-phase loops. The method further comprises comparing the transient energy ratios with thresholds corresponding to the phase-to-ground loops or phase-to-phase loops and determining a type of fault based on the comparison.
A method for attaching a terminal (4) to a metal substrate structure (3) for a semiconductor power module (10) comprises providing at least one terminal (4) and providing the metal substrate structure (3) with a metal top layer (17), a metal bottom layer (19) and an isolating resin layer (18) arranged between the metal top layer (17) and the metal bottom layer (19). The method further comprises providing and coupling a buffer structure element (7) to a top surface (171) of the metal top layer (17) to form a protrusion for the at least one terminal (4). The method further comprises coupling the at least one terminal (4) to the buffer structure element (7) by means of ultrasonic welding such that the buffer structure element (7) is arranged between the metal top layer (17) and the at least one terminal (4) and is materially bonded to the at least one terminal (4).
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/373 - Cooling facilitated by selection of materials for the device
The disclosure relates to a transformer arrangement (100) comprising a transformer (10) which comprises at least one phase winding (12). The phase winding (12) has coil turns around a coil axis (c). The transformer arrangement (100) further comprises a transformer tank (20) having walls (22) forming an enclosure in which the transformer (10) is arranged. The enclosure contains an incompressible medium in which the transformer (10) is immersed. A screen (30) is arranged in the transformer tank (20), between the walls (22) of the transformer tank (20) and the at least one phase winding (12) of the transformer (10). The screen (30) has an inner, transformer-facing, surface and an outer, wall-facing, surface. The screen (30) is further arranged distanced from the at least one phase winding (12) of the transformer (10). The transformer tank (20) has a first wall (22') extending transversely to a first axis (z) adjacent to a first end of the transformer (10) and an opposite second wall (22'') extending transversely to the first axis (z), adjacent to a second end of the transformer (10). The screen (30) has at least one first part (32') and at least one second part (32''), each extending transversely to the first axis (z) and wherein the at least one first part (32') is arranged between the first end of the transformer (10) and the first wall (22') of the transformer tank (22) and the at least one second part (32'') is arranged between the second end of the transformer (10) and the second wall (22'') of the transformer tank (20).
The disclosure relates to a transformer arrangement (100) comprising a transformer (10) which comprises at least one phase winding (12). The phase winding (12) has coil turns around a coil axis (c). The transformer arrangement (100) further comprises a transformer tank (20) having walls (22) forming an enclosure in which the transformer (10) is arranged. The enclosure contains an incompressible medium in which the transformer (10) is immersed. A screen (30) is arranged in the transformer tank (20), between the walls (22) of the transformer tank (20) and the at least one phase winding (12) of the transformer (10). The screen (30) has an inner, transformer-facing, surface and an outer, wall-facing, surface. The screen (30) is further arranged distanced from the at least one phase winding (12) of the transformer (10). The transformer (10) has lateral sides parallel with the coil axis (c). The screen (30) has at least one lateral part (32) aligned with the lateral sides of the transformer (10), and wherein the at least one lateral part (32) of the screen circumscribes the transformer (30)
A modular multilevel converter (101) is provided. The modular multilevel converter includes a plurality of converter cell modules (110) and a supporting structure (120) comprising a first level (121) and a second level (122). Vertical air separation (V) between converter cell modules of the first level and converter cell modules of the second level provides hot air flow paths (H) from upper surfaces of heat exchanger units (122) of the converter cell modules of the first level to a space located between converter cell modules of the second level, which are delimited by lateral air separation (L) of the converter cell modules of the second level, and cold air flow paths (C) for ambient air surrounding the modular multilevel converter to be directed to lower surfaces of said heat exchanger units of the converter cell modules of the second level.
The present invention relates to a transistor (10), in particular a wide bandgap semiconductor power transistor (40), comprising an epitaxial layer (11) of a first conductivity type, at least one well region (13) of a second conductivity type formed in a selected area of the epitaxial layer (11), at least one terminal region, in particular a source region (29), of the first conductivity type formed in or adjacent to the at least one well region (13), at least one terminal electrode (15), in particular a source electrode (21), formed at least partly on a surface (12) of a first part of the at least one terminal region (14), and at least one resistive region (16) formed within the at least one terminal region (14), the at least one resistive region (16) comprising amphoteric impurities. The present invention further relates to a power electronic switching device comprising a plurality of switching cells and a method for manufacturing a transistor (10), in particular a wide bandgap semiconductor power transistor (40).
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A method for monitoring a transformer (10) comprising a tap changer (16), wherein extracted information comprises a circulating current amplitude (AC) and/or a circulating current time (tC) covering at least a part of the tap change operation represented by at least one current difference waveform, and/or a transition current time (tR) covering at least a part of the tap change operation represented by at least one power loss waveform.
H01F 29/02 - Variable transformers or inductances not covered by group with provision for rearrangement or interconnection of windings
H02H 7/055 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for transformers for tapped transformers or tap-changing means thereof
48.
METHOD OF GENERATING A SIGNAL PROCESSING LOGIC, DEVICE FOR CONTROLLING, MONITORING, AND/OR ANALYZING A PHYSICAL ASSET, AND ELECTRIC POWER SYSTEM
To generate a signal processing logic (42), machine learning model training is performed, comprising training one or several encoders and one or several decoders. At least one encoder of the trained machine learning may be used for providing the signal processing logic (42) to a device (40) that executes the signal processing logic (42) to control, monitor, and/or analyze the physical asset.
H02H 7/04 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for transformers
49.
DISCHARGE RESISTOR ARRANGEMENT FOR ENERGY STORAGE CABINETS IN AN ENERGY STORAGE SYSTEM
There is disclosed herein a method for fault-response in an energy storage system (ESS), wherein the ESS comprises a string of series-connected energy storage cabinets (110), and the string of energy storage cabinets comprises at least two energy storage cabinets (110A, 110B) and a 5discharge resistor (150) arranged such that the discharge resistor is selectively connectable to each or both of the two cabinets (110A, 110B). The method comprises detecting a failure of a first cabinet (110A) of the two cabinets (110A, 110B) and, in response to detecting the failure of the first cabinet (110A), selectively electrically connecting the discharge resistor (150) 10to the first cabinet (110A), thereby discharging electrical energy stored in the first cabinet (110A) via the discharge resistor (150).
H02H 7/18 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for accumulators
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
The present disclosure relates to an integrated energy conversion and storage system and method for operating the same. The system includes: an energy conversion module configured for performing conversion from electric energy to hydrogen energy or bidirectional conversion between electric energy and hydrogen energy and at least including an electrolysis unit configured for performing electrolysis and a power conversion unit configured for supplying DC power to the electrolysis unit; an energy storage module including at least one of a hydrogen storage unit and a thermal storage unit; an energy recovery module configured for recovering thermal energy from the energy conversion module and supplying recovered thermal energy to the electrolysis unit; and at least one controller configured for controlling the integrated energy conversion and storage system. The system and the method can offer the benefits of higher practicality, higher energy conversion efficiency and lower capital cost.
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
C25B 9/70 - Assemblies comprising two or more cells
C25B 15/021 - Process control or regulation of heating or cooling
F01K 7/16 - Steam engine plants characterised by the use of specific types of engine; Plants or engines characterised by their use of special steam systems, cycles or processes; Control means specially adapted for such systems, cycles or processes; Use of withdrawn or exhaust steam for feed-water heating the engines being only of turbine type
F02C 3/22 - Gas-turbine plants characterised by the use of combustion products as the working fluid using a special fuel, oxidant, or dilution fluid to generate the combustion products the fuel or oxidant being gaseous at standard temperature and pressure
H02J 5/00 - Circuit arrangements for transfer of electric power between ac networks and dc networks
C25B 15/08 - Supplying or removing reactants or electrolytes; Regeneration of electrolytes
In one embodiment, the method is for producing a semiconductor module (1), the method comprises: - providing a semiconductor component (2) configured for voltages of at least 0.6 kV and having a bottom main side (23) and an opposite top main side (24), - providing a bottom metal disk (3), and - pressing the semiconductor component (2) onto the bottom metal disk (3) with a preconfigured inhomogeneous pressure profile (P), wherein the bottom main side (23) faces the bottom metal disk (3), seen in top view of the bottom main side (23), the pressure profile (P) has a local minimum (Nl) in a central region (C) of the semiconductor component (2) which is surrounded by a circumferential maximum (M) of the pressure profile (P), and the circumferential maximum (M) is surrounded by a circumferential minimum (N2) of the pressure profile (P).
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/051 - Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
52.
FAST EARTHING SWITCH FOR INTERRUPTING NON-SHORT-CIRCUIT CURRENTS
The invention relates to a fast earthing switch (1) comprising two contacts (2) of which at least one contact (2) is movable in relation to the other contact between a closed position, in which the contacts (2) are connected, and an open position, in which the contacts (2) are unconnected, said contacts (2) defining an arcing region in which an arc is generated during a current interrupting operation and in which an arc-quenching medium is present, a cylinder-like guiding tube (3) in which the at least one movable contact (2) forming a piston (4) is slidably arranged for linearly moving between the closed position and the open position, whereby the guiding tube (3) is closed at an upper end (5) and/or at a thereto opposite lower end (6) so that that the piston (4) defines a first compression chamber (9) with the upper end (5) and/or a second compression chamber (10) with the lower end (6) for thereby decelerating movement of the piston (4) when moving into the open position and/or into the closed position.
H01H 3/60 - Mechanical arrangements for preventing or damping vibration or shock
H01H 33/90 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts this movement being effected by, or in conjunction with, the contact-operating mechanism
A turret assembly comprises a turret configured to contain pressure created and including a circumferential outer surface, an elbow portion configured to couple to a housing assembly, and a distal portion extending distally from the elbow portion; and a coupling assembly configured to further couple the turret to the housing assembly, the coupling assembly including a reinforcement support configured to substantially surround and contact the circumferential outer surface of the turret.
The present disclosure relates to a power electronics module (10) comprising: a substrate (11) with at least a first metallization area (12), a first group of power electronic devices (14) arranged in the first metallization area (12), wherein the first group comprises a plurality of power electronic devices (14). The power electronics module (10) further comprises a common, uninterrupted joining layer (13) arranged between the first metallization area (12) and the first group of power electronic devices (14), wherein the common, uninterrupted joining layer (13) establishes at least a mechanical and an electrical contact between the first metallization area (12) and the first group of power electronic devices (14). The present disclosure further relates to a method for manufacturing such a power electronics module (10).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups
The invention relates to a high voltage disconnector switch comprising a fixed first main contact (1) comprising at least one first contact element (4a), a fixed second main contact (2) comprising at least one second contact element (4b) and axially extending in extension of the fixed first main contact (1), a movable main contact (3) comprising an axially extending opening, arranged movably between an open position and a closed position and axially in parallel to the fixed first main contact (1) and the second main contact (2), whereby the movable main contact (3) is electrically connected in both positions via the at least one second contact element (4b) with the fixed second main contact (2) and only in the closed position via the at least one first contact element (4a) with the fixed first main contact (1), a fixed arcing contact (5) connected with a first end to the fixed first main contact (1), extending axially parallel to the movable main contact (3) and arranged for being encompassed on a second opposite end by the opening of the movable main contact (3), a movable arcing contact (6) movably arranged within the opening of the movable main contact (3), electrically connected via at least one third contact element (4c) to the movable main contact (3) and comprising a spring (8) arranged within the opening of the movable main contact (3) and configured for pushing, in the closed position, the movable arcing contact (6) onto and thereby electrically contacting the fixed arcing contact (5), and a power diode (7) arranged between the fixed first main contact (1) and the fixed arcing contact (5) and/or between the fixed arcing contact (5) and the movable arcing contact (6).
A system for supplying power including two or more power converting units (11~1n) coupled between a power source (P) and a plurality of electrolysis units (E_1~E_n) for gas production; and a control unit (20) coupled with the two or more power converting units, the control unit being configured to operate at least one power converting unit of the two or more power converting units to supply DC power including an adjustable AC component.
The present disclosure relates to a method for operating an electrolysis plant (EP), a control module for operating an electrolysis plant (EP), an electrolysis plant, and a method for dispatching at least one electrolysis plant (EP) in a power system. The electrolysis plant (EP) comprises an electrolysis stack assembled from a plurality of electrolysis cells. The method for operating the electrolysis plant comprises following steps executed by a control module: adapting a multiphysics model to a plurality of operation parameters of the electrolysis plant, wherein the multiphysics model comprises a one-dimensional liquid-gas diphasic flow model and an electrochemical model coupled with the diphasic flow model, and the plurality of operation parameters comprises at least one preset parameter and at least one parameter to be calculated; calculating a value of the at least one parameter to be calculated according to a preset value of the at least one preset parameter by means of the multiphysics model; and executing control to the electrolysis plant according to the calculated value of the at least one parameter to be calculated.
G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
G05B 17/02 - Systems involving the use of models or simulators of said systems electric
58.
METHOD FOR PRODUCING VERTICAL TRENCH-GATE MOSFETS OR IGBTS AND CORRESPONDING SEMICONDUCTOR DEVICE
The method comprises a step of providing a semiconductor body with a mask (3) on a top side of the semiconductor body, wherein at least one trench (2) extends from the top side into the semiconductor body. A functional portion (11) is formed laterally adjacent to the trench. In a first section (31) overlapping with the trench, the mask is thicker than in a second section (32) overlapping with the functional portion. A first region (12) of a first conductivity type is formed in the functional portion adjacent to the trench using implanting first- type dopants using an angled implant. Thereafter, protection layer is deposited onto the mask, wherein the protection layer laterally extends over the trenches and the functional portion. A second region of a second conductivity type is formed in the functional portion, between pairs of first regions (12) using implanting second-type dopants through the protection layer. A part of the first region is thereby preserved. The device may either be a vertical trench-gate MOSFET or IGBT.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
Methods for determining a line fault of a power system. The methods include obtaining sampled values of voltages and currents of phases of a power line in the power system, determining a phase compensation voltage of a first phase and an interphase compensation voltage of an interphase loop between a second phase and a third phase, and detecting the line fault in the first phase and/or the interphase loop by comparing the phase compensation voltage and the interphase compensation voltage.
G01R 31/08 - Locating faults in cables, transmission lines, or networks
G01R 25/00 - Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
H02H 7/22 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for switching devices
The present disclosure relates to a fixed contact assembly, an arc extinguish chamber, and a high voltage circuit breaker. The fixed contact assembly comprises: a fixed contact; and a fixed contact holder to which the fixed contact is attached, wherein the fixed contact holder is provided with at least one first opening, via which the fixed contact is exposed to directly communicate with an exterior of the fixed contact holder.
H01H 33/91 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts this movement being effected by, or in conjunction with, the contact-operating mechanism the arc-extinguishing fluid being air or gas
61.
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE AND MANUFACTURING METHOD
Semiconductor device, semiconductor module and manufacturing method In one embodiment, the semiconductor device (1) comprises: • - a semiconductor chip (2) configured for voltages of at least 0.6 kV comprising top contact areas (21) at a chip top side (20), • - a first electric wiring layer (3) in electric contact with the top contact areas (21) having first contact areas (31) electrically assigned to the top contact areas (21), • - a second electric wiring layer (4) on a side of the first electric wiring layer (3) remote from the top contact areas (21) and having second contact areas (42) electrically assigned to the top contact areas (31), the second contact areas (42) are configured as external contact areas, • - at least one third electric wiring layer (5) located between and electrically connected with the first electric wiring layer (3) and the second electric wiring layer (4) and having third contact areas (53), • at least one of the second contact areas (42) is shaped differently from the assigned one of the top contact areas (21), seen in top view of the chip top side (20). • - the semiconductor chip (2) is a power metal-insulator field-effect transistor, MISFET, or a power insulated-gate bipolar transistor, IGBT, • - the first, second and third wiring layers (3, 4, 5) are separated from one another in each case by an insulation layer (61, 62, 63) made of a dielectric material, and wherein a first one of the second contact areas (42) completely runs around a second one of the second contact areas (42), seen in top view of the chip top side (20).
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
A high-voltage converter arrangement (1) comprises a plurality of switching cells (10a,..., 101), and at least one damping unit (50) being configured to dampen electromagnetic noise caused by a switching operation within the switching cells (10a,..., 101). The switching cells (10a,..., 101) are interconnected in series by a galvanic connection (20). The at least one damping unit (50) is arranged on the galvanic connection (20) in series with the switching cells (10a,... 101). An electrical equivalent circuit of the at least one damping unit (50) comprises at least one inductor (51) and at least one resistor (52).
thth) above which the energy dissipating component (240) dissipates electrical energy, and a discharge resistor (250) connected in parallel to the capacitor via a discharge switch (260). The DC-current breaker switch (200) is configured to, during a circuit-breaking operation (500), open (510) the main switch, dissipate a first portion of electrical energy from the current path (20), and close (520) the discharge switch (260) after the energy dissipating component (240) has dissipated the first portion of electrical energy, thereby dissipating a second portion of electrical energy.
H01H 33/59 - Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the ac cycle
64.
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
According to an embodiment, the semiconductor device (100) comprises a semiconductor body (1), a first electrode (2), a gate electrode (3) and a variable resistor element (4). The variable resistor element is electrically connected to the gate electrode and to the first electrode. The variable resistor element has at least a first and a second state. In the first state, the variable resistor element acts as an electrical insulator in order to suppress electrical current from flowing from the first electrode to the gate electrode or vice versa via the variable resistor element. In the second state, the variable resistor element acts as an electrical conductor in order to allow electrical current to flow from the first electrode to the gate electrode or vice versa via the variable resistor element. The variable resistor element is configured to make a transition from the first state into the second state when a temperature of the variable resistor element rises above a critical temperature Tc.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
65.
SPACER ELEMENT FOR A WINDING, KIT, METHOD FOR MANUFACTURING A WINDING AND WINDING
According to an embodiment, the spacer element (1) for a winding (100) of an electric device comprises at least one connection member (20, 21, 22) and a plurality of ribs (3). The ribs are connected to the connection member and are spaced from each other pairwise. The spacer element is arrangeable between two successive winding units (10) of the winding during manufacturing of the winding. Each two adjacent ribs delimit a flow channel (4) for a cooling fluid, said flow channel extends between and along the two adjacent ribs.
H01F 27/32 - Insulating of coils, windings, or parts thereof
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT MADRAS) (India)
HITACHI ENERGY SWITZERLAND AG (Switzerland)
Inventor
Srivastava, Vishal
Schmidt, Lars Erik
Varughese, Susy
Lalitha, Sruthi
Deshpande, Abhijit Prakash
Abstract
The present invention is providing a bio-based adhesive composition which is water-based. The adhesive composition comprises bioprotein, salt of carboxymethyl cellulose, gum, alkali and a solvent. The adhesive composition is prepared at ambient conditions. The adhesive composition is useful for insulation of the electric material. Especially for pressboard for transformer which require good adhesive for imparting good mechanical and electrical strength.
A high energy spring drive to control a high voltage circuit breaker is described. The high energy spring drive includes a closing assembly positioned at a first end and an opening assembly positioned at a second end, a charging assembly positioned between the closing and opening assembly, and a transmission assembly. The closing and opening assembly control the closing and opening of circuit breaker. The charging assembly includes a worm wheel arrangement coupled to a motor to transfer torque to a motor shaft, to energize the closing assembly, a decoupling mechanism to decouple the worm wheel arrangement from the motor shaft on energization of the closing assembly, and a cam-follower mechanism. The transmission assembly actuated by the follower of the cam-follower mechanism is to electrically close a circuit breaker when the follower rotates in a first direction and electrically open the circuit breaker when the follower rotates a second direction.
A power module (1) comprising at least one substrate (2), at least one switching device (3) located on the substrate (2), at least one power path (6) for supplying power to the at least one switching device (3) and at least one auxiliary path (7, 10) for controlling and/or monitoring the switching device (3), wherein the at least one auxiliary path (7, 10) comprises at least one connection portion (9, 12, 17, 18, 19) that comprises two or more connectors (8, 11, 20) electrically connected in parallel, wherein the power module (1) comprises several switching devices (3) having corresponding auxiliary paths (7, 10), wherein at least one of the corresponding auxiliary paths (7, 10) comprises a connection portion (9, 12, 17, 18, 19) with parallel connectors (8, 11, 20) and wherein at least another one of the corresponding auxiliary paths (7, 10) comprises a connection portion (9, 12, 17, 18, 19) with parallel connectors (8, 11, 20) or comprises a connection portion (13) with a single connector, wherein the number of the connectors (8, 11, 20) is different in the corresponding auxiliary paths (7, 10). As an example, the number of parallel connectors in the connection portion may be such that a parasitic inductance of the auxiliary path, such as the gate inductance, for example, is reduced by at least 5 % compared to an inductance of the auxiliary path with only a single connector in the connection portion. The invention also discloses a method of obtaining said device.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
69.
POWER CONTROL OF A NON-ISOLATED MODULAR POWER CONVERTER
The present disclosure relates to a device for power control of a common power converter comprising: a primary converter comprising a first plurality of sub-converters; a secondary converter comprising a second plurality of sub-converters; wherein the primary converter is electrically coupled to the secondary converter, and to a plurality of transformers, wherein a first sub-converter in the first plurality of sub-converters is electrically coupled to a first transformer in the plurality of transformers, and the first transformer is further electrically coupled to a first sub-converter in the second plurality of sub-converters; and wherein a second sub-converter in the first plurality of sub-converters is electrically coupled to a second transformer in the plurality of transformers and the second transformer is electrically coupled to a second sub-converter in the second plurality of sub-converters. The present disclosure also relates to a respective control method, a controller and system.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
70.
A METHOD OF BREAKING A DIRECT CURRENT IN A MULTI-TERMINAL HIGH-VOLTAGE DIRECT CURRENT SYSTEM
A method of breaking a direct current in a multi-terminal high-voltage direct current (MT HVDC) system comprising a first converter device (2), a second converter device (3), the first and second converter devices being interconnected via high-voltage direct current (HVDC) links, and a switch (6), arranged in one of the HVDC links. The method comprises: minimizing the direct current through the switch generating a alternating current circulating between the first converter device and the second converter device, via the DC links and through the switch, wherein the alternating current is superimposed on the direct current, thereby causing a resulting current, and has a magnitude being large enough to generate zero crossings of the resulting current through the switch; and during the generation of the alternating current, switching the switch to an open state.
H02J 3/00 - Circuit arrangements for ac mains or ac distribution networks
H02J 3/36 - Arrangements for transfer of electric power between ac networks via a high-tension dc link
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 7/493 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel
According to an embodiment, the RC-IGBT (1000) comprises a semiconductor body with an emitter side and a collector side (shown in Fig. 4), a collector layer at the collector side with at least one pilot region (10) and at least one mixed region (11) and a collector electrode on the collector side and in electrical contact with the collector layer. The pilot region (10) is of a first conductivity type. The mixed region (11) has first subregions (111) of the first conductivity type and second subregions (112) of a second conductivity type. The doping concentration in the first subregions is different from the doping concentration in the pilot region. The collector region further comprises an edge region (12) surrounding pilot region (10) and the mixed region (11). The edge region may be mainly of the first or of the second conductivity type, and the first and second subregions (111, 112) may extend partly into the edge region (12).
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
72.
POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD
In at least one embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2), - a gate electrode (31), and - an extraction electrode (34), wherein the semiconductor body (2) comprises - a source region (21) of a first conductivity type, - a well region (22) of a second conductivity type different from the first conductivity type at the gate electrode (31), - a drift region (23) which is of the first conductivity type, and - a barrier region (28) which is of the first conductivity type, the barrier region (28) is located between the drift region (23) and the extraction electrode (34).
A flow inverter (1) for a coolant substance (18) for a power semiconductor component (16) is specified, comprising - a first plate (2) extending along a main extension plane of the flow inverter (1), - a second plate (3) extending along the main extension plane, - a first wall (4) provided on the first plate (2) and the second plate (3) from a first main side of the flow inverter (1), and - a second wall (5) provided on the first plate (2) and the second plate (3) from a second main side of the flow inverter (1) opposite the first main side, wherein - the first plate (2) is provided next to the second plate (3), - at least one first recess (6) is provided between the first plate (2) and the second plate (3), and20 - at least one second recess (7) is provided between the first plate (2) and the second plate (3). Further, a power semiconductor component (16) is specified.
H01L 23/46 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids
H01L 23/367 - Cooling facilitated by shape of device
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
The present disclosure relates to a transformer comprising a plurality of windings, the plurality of windings comprising a first winding and a second winding, wherein the first winding comprises a first winding portion at a first position in an axial direction and in a radial direction, and a second winding portion at a second position in the axial direction and in the radial direction, wherein the first position is different from the second position in the axial direction, wherein the number of turns of the first winding portion is different from the number of turns of the second winding portion, wherein the second winding comprises a third winding portion at a third position in the axial direction and in the radial direction, and a fourth winding portion at a fourth position in the axial direction and in the radial direction, wherein the third position is different from the fourth position in the axial direction, and wherein the number of turns of the third winding portion is different from the number of turns of the fourth winding portion. The present disclosure also relates to a method for controlling losses of a transformer.
H01F 27/30 - Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
H01F 27/34 - Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
75.
NETWORK CONSTRAINT ENERGY MANAGEMENT SYSTEM FOR ELECTRIC VEHICLE DEPOT CHARGING AND SCHEDULING
Network constraint energy management system for electric vehicle (EV) depot charging and scheduling. In an embodiment, a power schedule is received from an economic dispatch application for a charging depot comprising EV charging station(s) and distributed energy resource(s). The power schedule may be simulated on a distribution network model of the charging depot, according to load flow analysis, to determine whether any grid-code violations occur. In response to the detection of violation(s), a constraint may be generated for each violating node, and the economic dispatch application may be re-executed with the constraint(s) to produce a new power schedule, until no violations are detected. When not all load demand can be satisfied by the power schedule, a charging schedule may be adjusted to ensure that critical energy requirements are satisfied. The final power and charging schedules may be used to schedule and control power generation and charging in the charging depot.
H02J 3/14 - Circuit arrangements for ac mains or ac distribution networks for adjusting voltage in ac networks by changing a characteristic of the network load by switching loads on to, or off from, network, e.g. progressively balanced loading
B60L 53/63 - Monitoring or controlling charging stations in response to network capacity
H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
76.
STATIC ELECTRIC INDUCTION DEVICE AND OPERATING METHOD
In one embodiment, the static electric induction device (1) comprises: - a heat-generating component (4) which is subject to electric induction, and - a duct system (5) configured to lead a coolant (4) along the heat-generating component (4), wherein - the duct system (5) includes a plurality of cross channels (51) and at least two longitudinal channels (52), each one of the longitudinal channels (52) is assigned to at least some of the cross channels (51) and the assigned cross channels (51) connect the respective longitudinal channels (52) with each other, and - the duct system (5) further includes at least one flow obstruction (53) located in at least one of the longitudinal channels (52), the flow obstruction (53) is configured to allow flow of the coolant through it and locally narrows a cross-section of the respective longitudinal channel (52) by at least 75%.
The disclosure relates to a power device for use in an electric energy power arrangement (100), said power device (1) comprising a gas chamber (10) adapted to, when in a use state in said power arrangement (100), comprise an insulation gas under a set of use conditions comprising a predetermined installation pressure (P0), and an insulation component (20) comprising a material in which said insulation gas is soluble and being arranged in relation to said gas chamber (10) so as to be at least partly exposed to said insulation gas when the power device (1) is in said use state. The power device has a delivery state, being a state of said power device (1) before and/or at an installation time (t0) at which the power device is installed in said electric energy power arrangement (100) under said set of use conditions comprising said installation pressure (P0) of said insulation gas in said gas chamber (10), wherein, in said delivery state, said insulation component (20) comprises an amount of pre-filled insulation gas which is dissolved in the material of the insulation component (20). The disclosure further relates to a method for manufacturing a power device having an insulation component comprising an amount of pre-filled insulation gas being dissolved in the material of the insulation component (20).
According to an embodiment, the semiconductor device (100) comprises a semiconductor body (1) with a first side (10) and a second side (20) opposite to the first side. The semiconductor device further comprises a first thyristor structure (I) and a second thyristor structure (II). The second thyristor structure is arranged laterally beside the first thyristor structure. Each of the first and the second thyristor structure comprises a first base region (11a, 11b) at the first side and a gate electrode (1a, 1b) on the first side adjoining the assigned first base region. The first base regions of the two thyristor structures are regions of the semiconductor body and are of the same conductivity type. The gate electrodes of the thyristor structures are individually and independently electrically contactable.
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
79.
HIGH VOLTAGE INSTALLATION COMPRISING A PLURALITY OF POWER ELECTRONIC CELLS AND WAVEGUIDE
The present disclosure relates to a high voltage, HV, installation (100, 200, 300, 400), comprising a plurality of power electronic cells (110), in particular power electronic switching cells, configured to operate at different electrical potentials, each power electronic cell (110) comprising a cell-side transceiver (112) with an antenna (114) for receiving and/or transmitting high frequency, HF, communication signals (124), and a waveguide (120) configured to carry and shield HF communication signals (124) of the plurality of power electronic cells (110). The waveguide (120) has a plurality of sections (122) configured to leak HF communication signals (124) present in the waveguide (120) into a corresponding plurality of adjoining areas (126) and vice versa. Each power electronic cell (110) of the plurality of power electronic cells (110) is arranged physically separated and in proximity to the waveguide (120), such that the respective power electronic cell (110) is electrically insulated from the waveguide (120) and the antenna (114) of the respective cell-side transceivers (112) is arranged in the respective adjoining area (126).
A transformer system (1) for a direct current converter system (20) comprises a plurality of windings (4a, 4b, 4c, 5a, 5b, 5c) for three electrical phases (3a, 3b, 3c), the windings (4a, 4b, 4c, 5a, 5b, 5c) being electrically connected to provide a 15° phase shift, and comprising at least three separate tanks (6a, 6b, 6c, 18a, 18b, 18c), wherein the windings (4a, 4b, 4c, 5a, 5b, 5c) associated to different electrical phases (3a, 3b, 3c) are located in different ones of the separate tanks (6a, 6b, 6c, 18a, 18b, 18c).
H01F 30/12 - Two-phase, three-phase or polyphase transformers
H02J 3/36 - Arrangements for transfer of electric power between ac networks via a high-tension dc link
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
Device (10) for measuring an alternating (AC) leakage current though a conductor (12), whereby the device (10) comprises: a conversion circuit (14) comprising a magnetic core (20) and a leakage current measurement circuit (18). The device (10) comprises a synchronous rectification circuit (16) that comprises a plurality of metal oxide semiconductor field effect transistors (MOSFETs) (24). The conversion circuit (14) is configured so that the conductor (12) is arranged to pass through, or wind around the magnetic core (20), and the conversion circuit (14) comprises a plurality of pairs of secondary windings (26, 28) or a single secondary winding with a plurality of taps, whereby the plurality of pairs of secondary windings (26,28) or the single secondary winding is wound around the magnetic core (20). The conversion circuit (14) is configured to convert a primary AC current in the conductor (12) to a secondary AC current in the plurality of pairs of secondary windings (26, 28) or the single secondary winding, whereby at least one first pair of secondary windings (26) or at least one first pair of taps is configured to apply a voltage to the plurality of MOSFETs, and at least one second pair of secondary windings (28) or at least one second pair of taps is connected to the synchronous rectification circuit (16). The synchronous rectification circuit (16) is configured to rectify the secondary AC current in the at least one second pair of secondary windings (28) or in the at least one second pair of taps to a direct current (DC) and supply the DC current to the leakage current measurement circuit (18).
The present disclosure relates to a method for power control of a common power converter comprising a plurality of power converters. The method comprises: determining a number of power converters of the plurality of power converters to be activated; determining, based on the at least one electrical parameter of the plurality of power converters and/or the determined number of power converters to be activated, a ratio of a number of at least one power converter of a first type of the plurality of power converters and a number of at least one power converter of a second type of the plurality of power converters; and operating the plurality of power converters based on the determined number of power converters and the ratio. The present disclosure also relates to a corresponding controller and system.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/00 - Conversion of dc power input into dc power output
H02M 1/10 - Arrangements incorporating converting means for enabling loads to be operated at will from different kinds of power supplies, e.g. from ac or dc
83.
CABLE MODULE, GAS-INSULATED DEVICE, AND METHOD FOR MANUFACTURING CABLE MODULE
The present disclosure relates to a cable module with a detachable fracture feature, a gas-insulated device comprising the cable module, and a method for manufacturing the cable module. The cable module for a high voltage gas-insulated device with a detachable electric connection comprises: an enclosure (1) provided with a first opening (11) and a second opening (12); an insulator (2) provided with a conductive insert (21) and fixed to a first flange (13) of the enclosure (1) around the first opening (11); a cable terminal connector (4) passing through a wall of the enclosure (1) and comprising a first end (41) positioned inside the enclosure (1) and a second end (42) positioned outside the enclosure (1) and configured to be connected to an external cable; a plurality of conductors connecting the conductive insert and the first end of the of the cable terminal connector.
A baseplate (1) for a power module (30) comprises a lower part (10) and an upper part (20). The lower part (10) comprises a cooling structure (11) configured to be in contact with a coolant during operation of the power module (30). The upper part (20) is coupled to the lower part (10). The cooling structure (11) faces away from the upper part (20) and comprises a surface (12) with a given surface structure (13, 14) including at least one of a mean roughness Ra > 1 µm and a plurality of protrusions with a respective height (H) of 2 µm or more with respect to a surface normal (A) perpendicular to the surface (12) of the cooling structure (11).
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
F28F 3/04 - Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being integral with the element
F28F 13/18 - Arrangements for modifying heat transfer, e.g. increasing, decreasing by surface treatment, e.g. polishing
85.
METAL SUBSTRATE STRUCTURE AND METHOD OF ATTACHING A TERMINAL TO A METAL SUBSTRATE STRUCTURE FOR A SEMICONDUCTOR POWER MODULE AND SEMICONDUCTOR POWER MODULE
A method for attaching a terminal (4) to a metal substrate structure (3) for a semiconductor power module (10) comprises providing at least one terminal (4) and providing the metal substrate structure (3) with a metal top layer (17), a metal bottom layer (19) and an isolating resin layer (18) arranged between the metal top layer (17) and the metal bottom layer (19). The method further comprises coupling the at least one terminal (4) to the metal top layer (17) of the metal substrate structure (3) by means of laser welding with a laser beam (6).
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/373 - Cooling facilitated by selection of materials for the device
86.
POWER CONTROL OF A POWER CONVERTER BASED ON A VARIABLE MODULATION FREQUENCY
The present disclosure relates to a method for power control of a power converter. The method comprises determining, based on monitoring at least one electrical parameter of the power converter, a switching frequency of a first control signal; determining, based on the monitoring at least one electrical parameter of the power converter, a first phase angle of the first control signal; and adjusting the switching frequency and the phase of the first control signal based on the determined switching frequency and the first phase angle. The present disclosure also relates to a respective controller and system.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
87.
IoT EDGE DEVICES UTILIZING MULTI-TRANSPORT MEDIUMS (BLUETOOTH MESH, WIFI MESH, CELLULAR) TO CONTROL DELAY AND JITTER
An apparatus comprising at least one integrated circuit configured to cause the apparatus to: determine delay information and/or jitter information for a first plurality of data units in a first data transmission, the first plurality of data units in the first transmission being received by a receiving device via a plurality of different connections from a transmitting device; in dependence on the determined delay information and/or jitter information for the first plurality of data units, determine for a second transmission of a second plurality of data units, which one or more of the second plurality of data units is to provide redundant data, the second transmission to be received by the receiving device via the plurality of different connections between the transmitting device and the receiving device, the second transmission being subsequent to the first transmission; and cause information about which one or more of the second plurality of data units is to provide redundant data, to be provided to the transmitter.
Methods and systems for operating an energy management system (EMS) for a microgrid are operative to automatically determine weights by which different objective functions are weighted in a multi-objective optimization performed by the EMS.
A cooler unit (1) for liquid cooling of a power module (30) comprises at least one insert (10) that includes an upper part (15) and a lower part (16) and that is configured to be coupled to the power module (30) with the upper part (15). The cooler unit (1) further comprises a housing (20) that limits an internal flow channel (27) for a coolant and that comprises at least one recess (21) which penetrates a wall (25) of the housing (20) up to the flow channel (27) and which is configured in coordination with the at least one insert (10) geometrically, wherein the at least one insert (10) comprises copper and is arranged inside the recess (21) and laser welded to the housing (20) such that during operation the coolant flows through the flow channel (27) and around the lower part (16) of the at least one insert (10).
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
90.
APPARATUS, SYSTEM AND METHOD FOR MEASURING HIGH VOLTAGE ON HIGH-VOLTAGE NODE
An apparatus (20) for measuring a high voltage on a high-voltage node including a power electronic converter comprising a first AC-to-DC converter (21), a first DC-to-AC converter (22) and a second AC-to-DC converter (23), the first AC-to-DC converter being connected with a low voltage arm of a high voltage divider, which is coupled between the high voltage node and the apparatus, to obtain a voltage measurement signal, the first DC-to-AC converter being configured to output a modulated signal of the voltage measurement signal, the second AC-to-DC converter being configured to output a demodulated signal of the voltage measurement signal; a high-frequency transformer (24) comprising a primary coil connected with an output terminal end of the first DC-to-AC converter to receive the modulated signal and a secondary coil connected with an input terminal of the second AC-to-DC converter; and a controller (25) configured to provide control signals to control switching devices of the first DC-to-AC converter to control a turn-on sequence of each switching device such that the first DC-to-AC converter outputs the modulated signal, to calculate signal parameters including phase information and amplitude information of the high voltage on the high-voltage node, and to output the calculated signal parameters.
Multi-helical windings in a transformer are disclosed. A group of helical windings (100) that are connected in series (e.g., a single, continuous cable wound around a cylinder) may be concentrically arranged around a longitudinal axis to induce magnetic flux in the same direction along the longitudinal axis. A plurality of such groups (100) may be connected in series and arranged radially around the longitudinal axis. Additionally or alternatively, a pair of groups may be connected in parallel and arranged at the same radial distance around the longitudinal axis with an axial separation between the pair. In addition, spaces (DI) may be formed radially between the turns (112A-N) of the helical windings (110A-D) and axially on radial ends of the group for cooling. The disclosed configurations may be used as the LV or HV winding in any type of transformer, including single- phase and three-phase distribution, dry, and power transformers.
H01F 27/34 - Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
The present disclosure relates to a method for distance protection of a transmission line carrying a plurality of phases for a phase-to-phase-to-ground fault comprising a first phase and a second phase of the plurality of phases as faulted phases in the phase-to-phase-to-ground fault, wherein the first phase is different from the second phase, the method comprising: obtaining a first impedance of a first electrical loop formed by a first phase carried on the transmission line and a ground potential based on a zero-sequence current (S601); obtaining a second impedance of a second electrical loop formed by a second phase carried on the transmission line and a ground potential based on the zero-sequence current (S602); computing an apparent impedance of the transmission line seen at a first terminal based on the first impedance and the second impedance (S603); and performing the distance protection based on the apparent impedance (S604). The present disclosure also relates to a respective device, computer-readable medium, and system.
H02H 3/40 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to ratio of voltage and current
G01R 31/08 - Locating faults in cables, transmission lines, or networks
H02H 7/28 - Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occurred for meshed systems
93.
A METHOD FOR OBTAINING AN IMPROVED TRANSFORMER DESIGN FOR A POWER PLANT
H01F 30/00 - Fixed transformers not covered by group
H01F 41/00 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
A method for controlling at least one power converter is disclosed. The method includes generating at least one electrochemical impedance spectra (EIS) reference signal, the at least one EIS reference signal each having a frequency selected for EIS; superimposing the at least one EIS reference signal respectively on at least one control reference signal to produce at least one superimposed reference signal; controlling the at least one power converter respectively based on the at least one superimposed reference signal to cause respectively charging/discharging at least one battery module; acquiring at least one response signal produced respectively by the at least one battery module; and calculating at least one EIS respectively for the at least one battery module respectively based on the at least one superimposed reference signal and the at least one response signal.
A method for handling a fault in a High Voltage Direct Current, HVDC, converter (1) is provided. The method comprises operating a switch arrangement (120) of a plurality of cells (100) operating in an active mode so as to convert High Voltage Alternating Current, HVAC, to HVDC or HVDC to HVAC, while arranging the switch arrangement of each of the cells operating in the inactive mode to bypass the energy storage of the cell, in response to an error indication for a cell operating in the active mode, switching the cell from operating in the active mode to operate in the inactive mode, and in response to a recovery indication for the cell operating in the inactive mode, switching the cell from operating in the inactive mode to operate in the active mode.
A vertical break disconnector for electrical connection or disconnection is described. The vertical break disconnector (100) is provided with a first and second housing unit with one or more contacts for electrical current conduction. The first housing unit (102) supports an engagement mechanism to engage or disengage with the one or more contacts (208) of the first and second housing unit to electrically close or open the vertical break disconnector. The engagement mechanism includes a conducting element (112) pivotably coupled to the first housing unit (102) at a first end of the conducting element (112) over a rotating shaft (114), a rotating lever (116) mounted on the first housing unit (102), and a connecting link (122) mounted on the first end of the conducting element to couple the conducting element to the rotating lever. In operation, the rotating lever causes the conducting element to turn and twist to electrically close or open the vertical break disconnector.
H01H 31/28 - Air-break switches for high tension without arc-extinguishing or arc-preventing means with movable contact that remains electrically connected to one line in open position of switch with angularly-movable contact
H01H 31/02 - Air-break switches for high tension without arc-extinguishing or arc-preventing means - Details
H01H 3/46 - Driving mechanisms, i.e. for transmitting driving force to the contacts using rod or lever linkage, e.g. toggle
A system (100) for stabilising a power grid (102), comprising a generator (104), configured to provide power to the power grid (102), the power having an active power component and a reactive power component, and a power line (106), configured to transmit power from the generator (104) to the power grid (102). The system (100) comprises a thyristor controlled braking resistor (TCBR) (108) arranged on the power line (106), and a capacitor (110) electrically connected in series with the TCBR (108). The TCBR (108) absorbs at least a portion of the reactive power component from the generator (104) during a fault on the power line (106) and the capacitor (110) is configured to compensate for the at least a portion of the reactive power component absorbed by the TCBR (108).
An arrangement (10) is disclosed, comprising a series connection of a plurality of energy storage units (1), a plurality of bypass circuits (2), each bypass circuit (2) being configured to bypass a respective one of the energy storage units (1) in the series connection, and a plurality of control modules (6, 7), wherein each control module (6, 7) corresponds to a respective one of the bypass circuits (2). Each control module (6, 7) is configured to control operation of the corresponding bypass circuit (2) and at least one other bypass circuit (2) of the plurality of bypass circuits (2) to selectively bypass the corresponding energy storage units (1) in the series connection in such a way that operation of each bypass circuit (2) of the plurality of bypass circuits (2) to selectively bypass the corresponding energy storage unit (1) in the series connection is controllable by means of at least two of the control modules (6, 7). A related method is also disclosed.
The present disclosure relates to a method for monitoring a plurality of heaters and/or determining water ingress in at least one substation. The method comprises receiving, by a controller from a first sensor a first at least one environmental condition of a first section of the at least one substation; receiving, by the controller from a second sensor a second at least one environmental condition of a second section of the at least one substation; and providing a warning signal, by the controller, according to a difference between the first at least one environmental condition and the second at least one environmental condition. The present disclosure also relates to a respective controller and system.
G01M 3/00 - Investigating fluid tightness of structures
H02J 13/00 - Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
G01M 3/04 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
G01M 3/18 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for valves
100.
METHOD AND SYSTEM FOR GENERATING A DECISION LOGIC AND ELECTRIC POWER SYSTEM
To generate a decision logic (34) for an IED (30), at least one machine learning model is trained in an iterative machine learning model training. Weighting functions are used to weight samples in the iterative machine learning model training. Weighting function(s) associated with one or several training cases are automatically modified in the iterative machine learning model training.
H02J 13/00 - Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
H02H 7/26 - Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occurred
G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
