This copper alloy for an electronic material contains at most 1.0 mass% of Ni, 0.5-2.5 mass% of Co, and Si in an amount resulting in a mass ratio (Ni+Co)/Si to be 3-5, the remaining portion being copper and unavoidable impurities. The average Taylor factor of the copper alloy under plane strain that occurs when the copper alloy is extended in a direction perpendicular to the rolling direction and when the thickness of the copper alloy decreases is at most 3.5. The crystal grain size of the copper alloy is at most 10 μm. The 0.2% proof stress of the copper alloy in the rolling direction is at least 700 MPa. The conductivity of the copper alloy in the rolling direction is at least 50% IACS.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
2222 heater, the electrode part is provided with a metal film; and an oxide film that has a film thickness of 2.5 µm or less is arranged between the metal film and an MoSi2 base material.
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
The present disclosure addresses the problem of providing an oxide film having a low carrier concentration and high carrier mobility, and an oxide sputtering target suitable for forming said oxide film. Provided is an oxide film containing zinc (Zn), tin (Sn), aluminum (Al), and oxygen (O), the oxide film being characterized by satisfying expressions (1) through (3). In the expressions, Al, Sn, and Zn represent the atomic ratios of each respective element in the oxide film. (1): 3 × Sn/Zn < Al. (2): Al/(Al + Sn + Zn) ≤ 0.10. (3): 0.33 ≤ Sn/(Sn + Zn) ≤ 0.60.
Provided is a method for recovering a metal from lithium ion battery waste, the method comprising a wet treatment in which a metal including lithium in lithium-ion battery waste is leached with an acid, and the metal is extracted from a metal-containing solution in which the metal is dissolved, wherein the lithium extracted by means of the wet treatment is used as a pH adjuster used in the wet treatment.
Provided is a method for efficiently recovering metals from lithium ion battery waste while reducing the use of sodium hydroxide as a pH adjuster. A method for recovering metals from lithium ion battery waste includes wet processing of leaching metals containing lithium from lithium ion battery waste with an acid, and extracting the metals from the metal-containing solution in which the metals are dissolved, in which the lithium extracted in the wet processing is used as a pH adjuster used in the wet processing.
A metal leaching method includes contacting battery powder of lithium ion battery waste with an acidic leachate 21 inside a leaching container 1 and leaching a metal contained in the battery powder into the acidic leachate 21, wherein the leaching container 1 has a porous member 2 arranged at a position above the liquid surface 22 of the acidic leachate 21 stored inside the container so as to cover the liquid surface 22, and when the metal is leached inside the leaching container 1, gas bubbles Ba generated in the acidic leachate 21 are brought into contact with the porous member 2 and collapsed, the opening of the porous member 2 being 12 mm or less.
The present invention provides a method for leaching out a metal contained in a battery powder of lithium ion battery waste into an acidic leaching liquid 21 by bringing the battery powder into contact with the acidic leaching liquid 21 within a leaching container 1. With respect to this method for leaching out a metal, the leaching container 1 has a movable member which is positioned and movable on the liquid level 22 of the acidic leaching liquid 21 retained within the leaching container 1; and when the metal is leached out within the leaching container 1, air bubbles Ba generated in the acidic leaching liquid 21 are broken by the action of the movable member.
The present disclosure addresses the problem of providing a multilayer body which is capable of maintaining high transmittance, while preventing an increase in the resistivity due to annealing. The present disclosure provides a multilayer body which is obtained by stacking an IZO film and an oxide film, wherein: in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, the surface resistivity of the multilayer body is 200 Ω/sq. or less; and in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, the average transmittance of visible light (wavelength: 380-780 nm) is 85% or more. The present disclosure also provides a multilayer body which is obtained by stacking an IZO film and an oxide film, wherein: if Rs0 is the surface resistivity of the multilayer body in cases where the multilayer body is not subjected to annealing, and Rs1 is the surface resistivity of the multilayer body in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, Rs1/Rs0 ≤ 10.0 is satisfied; and in cases where the multilayer body is subjected to annealing at 350°C in the atmosphere, the average transmittance of visible light of the multilayer body is 85% or more.
A highly pure electrodeposited copper comprising copper and unavoidable impurities, wherein the purity is at least 6N, the content of Ag included as an impurity is 0.2 ppm or less, the amount of included nonmetal inclusions with a particle size of 0.5-20 μm is 20,000/g or less, the average particle size in an electrodeposition cross section is in the range of 40-400 μm, the maximum particle size in the electrodeposition cross section is in the range of 300-2,700 μm, the average particle size in the electrodeposition surface is in the range of 25-150 μm, and the maximum particle size in the electrodeposition surface is in the range of 100-450 μm. As a result, the present invention provides a highly pure electrodeposited copper that has excellent crushability while suppressing the occurrence of lumps. (Selected drawing) FIG. 1B
The present invention provides a rolled copper foil for secondary batteries, the rolled copper foil having good heat resistance, thereby maintaining high strength even after a heat treatment. The present invention provides a rolled copper foil for secondary batteries, the rolled copper foil containing 0.05% by weight to 0.15% by weight of Zr and 0.05% by weight or less of oxygen, with the balance being made up of Cu and unavoidable impurities, while having a tensile strength in a direction parallel to the rolling direction of 500 MPa or more after a heat treatment at 350°C for 3 hours, and a change ratio of the tensile strength in the direction parallel to the rolling direction of 15% or less between before and after the heat treatment.
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
The present invention provides a metal resin composite electromagnetic shielding material which is obtained by stacking N-number of metal layers (N represents an integer of 1 or more) and M-number of resin layers (M represents an integer of 1 or more), with adhesive layers being interposed therebetween, wherein an adhesive layer that is closest to the outer surface of the metal resin composite electromagnetic shielding material has an air bubble proportion of 4.5% or less when the adhesive layer is observed from the resin layer side.
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
12.
METHOD FOR PRODUCING COBALT SOLUTION, METHOD FOR PRODUCING COBALT SALT, METHOD FOR PRODUCING NICKEL SOLUTION, AND METHOD FOR PRODUCING NICKEL SALT
A method for producing a cobalt solution which involves removing magnesium ions from a cobalt-containing solution which contains magnesium ions and is obtained by subjecting battery powder from lithion-ion battery waste to at least a leaching treatment, said method including a magnesium separation step which involves extracting cobalt ions from said cobalt-containing solution by using a solvent which contains a carboxylic acid-type extracting agent, separating magnesium ions, and thereafter, inverse-extracting the cobalt ions from the solvent and obtaining a cobalt solution as an inverse-extracted liquid.
C22B 3/38 - Treatment or purification of solutions, e.g. obtained by leaching by liquid-liquid extraction using organic compounds containing phosphorus
C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
H01M 10/54 - Reclaiming serviceable parts of waste accumulators
13.
SPUTTERING TARGET MEMBER, SPUTTERING TARGET ASSEMBLY, AND FILM FORMING METHOD
Provided is a sputtering target member which is for a magnetic recording layer and can suppress the generation of particles. This sputtering target member for a magnetic recording layer contains 10-70 mol% of Co, 5-30 mol% of Pt, 1.5-10 mol% of carbide, and 0-30 mol% in total of one or two more non-magnetic materials selected from among carbon, oxide, nitride, and carbonitride.
G11B 5/65 - Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
14.
Fe-Pt-C-BASED SPUTTERING TARGET MEMBER, SPUTTERING TARGET ASSEMBLY, METHOD FOR FORMING FILM, AND METHOD FOR PRODUCING SPUTTERING TARGET MEMBER
Provided is a Fe-Pt-C-based sputtering target member which is prevented from the formation of particles during sputtering. The Fe-Pt-C-based sputtering target member has a magnetic phase containing Fe and Pt and a non-magnetic phase, the sputtering target member having a carbon-derived diffraction peak at a diffraction angle satisfying the formula: 25.6° ≤ 2θ ≤ 26.2° in an X-ray diffraction profile produced by the analysis of the sputtering target member by an X-ray diffraction method.
G11B 5/851 - Coating a support with a magnetic layer by sputtering
H01F 10/14 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
The present invention provides an IGZO sputtering target which has a high relative density, while suppressing particle increase and arcing during sputtering. The present invention provides an IGZO sputtering target which contains indium (In), gallium (Ga), zinc (Zn), zirconium (Zr) and oxygen (O), with the balance being made up of unavoidable impurities; and this IGZO sputtering target contains Zr in an amount of less than 20 ppm by mass, while having a relative density of 95% or more.
C04B 35/01 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
16.
BROOKITE-TYPE CRYSTALLINE TITANIUM OXIDE POWDER, AND METHOD FOR PRODUCING BROOKITE-TYPE CRYSTALLINE TITANIUM OXIDE POWDER
Provided are: a high-purity brookite-type crystalline titanium oxide powder; and a method for producing a brookite-type crystalline titanium oxide powder. The brookite-type crystalline titanium oxide powder has a sulfur atom content of 100 wtppm or less.
The present invention addresses the problem of providing a pure copper or copper alloy powder which is used for deposition modeling by means of a laser beam system, and which is capable of decreasing the oxygen concentration in a model, while having an increased laser absorptance. The present invention provides a pure copper or copper alloy powder which is provided with an oxide coating, wherein: the oxide coating contains carbon; and the ratio of the oxygen concentration to the carbon concentration ((oxygen concentration)/(carbon concentration)) is 5 or less.
The smelting furnace according to the present invention is characterized by comprising: a first reaction zone into which a first charge containing a powder-form concentrate is charged, and in which the concentrate is oxidized by an oxygen-containing gas and allowed to fall downward in the form of liquid drops; and a second reaction zone having a holding container for holding molten metal obtained through the falling of the liquid drops, the second reaction zone being such that a raw material other than the concentrate is charged as a second charge into the molten metal and the second charge is caused to melt by the heat of oxidation of a matte in the molten metal or by a fuel combustion flame, and the second reaction zone being located at a position that is below the first reaction zone and on the upstream side relative to the first reaction zone with respect to the flow of the molten metal.
A metal-resin composite body 1 is provided with a metal plate 2, and a resin member 3 affixed to the metal plate 2, and has an internal space which is partitioned by means of a sealing member that includes the resin member 3, wherein: the resin member 3 has a frame-like shape extending on the metal plate 2 so as to enclose the perimeter of the internal space; there are weld lines 7 in one or two locations in the circumferential direction of the frame-shaped resin member 3; and, on a resin-covered surface in which the metal plate 2 is covered by the resin member 3, there is a rough undulating surface formed by means of rectangular recessed portions 5a and rectangular protruding portions 5b that are aligned alternately in each of one direction and a direction perpendicular thereto, in a plan view of the resin-covered surface.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
21.
SPUTTERING TARGET AND METHOD FOR PRODUCING SPUTTERING TARGET
This sputtering target is formed from multiple structural members including a target and a substrate. The multiple structural members include a first structural member and a second structural member that are layered together. The first structural member contains Al and the second structural member contains Cu. At least one of the first structural member and the second structural member contains Mg. The sputtering target contains Al and Cu between the first structural member and the second structural member and has an alloy layer contacting the first structural member and the second structural member. At least a portion of the alloy layer further includes an Mg-containing layer in which Mg content is 5.0 at% or more.
Provided is a magnetic particle powder containing a plurality of fine magnetic particles that can exhibit high magnetic force. This magnetic particle powder has a BET specific surface area of 10 m2/g to 50 m2/g, a median diameter (D50) of 0.5 μm to 10 μm, and saturation magnetization (Ms) of 50 emu/g or greater.
B82B 1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
H01F 1/00 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
B01J 20/02 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
B01J 20/06 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising oxides or hydroxides of metals not provided for in group
B01J 20/28 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
23.
SURFACE-TREATED COPPER FOIL, COPPER-CLAD LAMINATE AND PRINTED WIRING BOARD
The present invention provides a surface-treated copper foil which comprises a copper foil and a surface treatment layer that is formed on at least one surface of the copper foil. The surface treatment layer has an Sku of 2.50 to 4.50 and an Str of 0.20 to 0.40.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
C25D 5/16 - Electroplating with layers of varying thickness
This surface-treated copper foil has a copper foil and a surface-treated layer formed on at least one surface of the copper foil. The surface-treated layer has an Spk change amount represented by formula (1) below of 0.02 to 0.24 µm. (1) Spk change amount = P2-P1 (in the formula, P1 is Spk calculated by applying a λs filter having a cutoff value λs of 2 µm, and P2 is Spk calculated without applying the λs filter).
The present invention provides a surface-treated copper foil which comprises a copper foil and a surface treatment layer that is formed on at least one surface of the copper foil. The surface treatment layer has a change ratio of Vmc of 23.00% to 40.00%, the change ratio of Vmc being represented by formula (1). (1): (Change ratio of Vmc) = (P2 – P1)/P2 × 100 In the formula, P1 is the value of Vmc as calculated, while applying a λs filter having a cut-off value λs of 2 µm; and P2 is the value of Vmc as calculated without applying the λs filter.
A surface-treated copper foil that has a copper foil and a surface-treatment layer formed on at least one surface of the copper foil. The amount of Vmp change, represented by formula (1), in the surface-treatment layer is 0.0010–0.0110 μm3/μm2. Amount of Vmp change = P2–P1 ... (1) In the formula: P1 is Vmp calculated after a λs filter is applied that has a cut off value λs of 2 μm; and P2 is Vmp calculated without the λs filter applied.
Provided is a surface-treated copper foil including a copper foil and a surface-treated layer formed on at least one surface of the copper foil. The surface-treated layer has an Sk rate of change, represented by formula (1) below, of 23.0-45.0%. Formula (1): Sk rate of change = (P2-P1)/P2×100 In the formula, P1 is Sk calculated by applying a λs filter having a cutoff value λs of 2 µm, and P2 is Sk calculated without applying the λs filter.
This surface-treated copper foil comprises a copper foil and a surface-treatment layer formed on at least one surface of the copper foil. The amount of change in Sk given by formula (1) for the surface-treatment layer is 0.180-0.600 µm. (1): Amount of change in Sk = P2 - P1 In the formula, P1 is the Sk calculated using a λs filter for which the cut off value λs is 2 µm, and P2 is the Sk calculated without using this λs filter.
This surface-treated copper foil has a copper foil and a surface-treated layer formed on at least one surface of the copper foil. The surface-treated layer has an Sku of 2.50-4.50 and an Str of 0.20-0.40.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
C25D 5/16 - Electroplating with layers of varying thickness
A copper oxide-containing powder containing copper oxide (I) wherein, when the powder has been heated to 400°C, the powder contains thermal decomposition residue deriving from pitch in a mass ratio of 0.025-0.060 with respect to the copper oxide (I).
Copper powder comprising copper particles wherein the compacted bulk density is 1.30 g/cm3to 2.96 g/cm3, and the 50% particle size D50 at the time when the cumulative frequency of the copper particles becomes 50% in the volume-based particle size histogram, and the crystallite diameter D, determined using Scherrer's equation from the Cu (111) plane diffraction peak in an X-ray diffraction profile obtained by powder X-ray diffraction on the copper powder, satisfies D/D50≥0.060.
B22F 9/24 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
The present invention addresses the problem of providing a sputtering target suitable for the formation of a semiconductor film having a low carrier concentration and a high mobility. Provided is a sputtering target containing zinc (Zn), tin (Sn), gallium (Ga) and oxygen (O), in which Ga is contained in an amount of 0.15 to 0.50 inclusive in terms of a Ga/(Zn+Sn+Ga) atomic ratio, Sn is contained in an amount of 0.30 to 0.60 inclusive in terms of an Sn/(Zn+Sn) atomic ratio, and the volume resistivity of the sputtering target is 50 Ω·cm or less.
C04B 35/01 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C04B 35/453 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
33.
LAYERED BODY HAVING FUNCTION AS TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR PRODUCING SAME, AND OXIDE SPUTTERING TARGET FOR SAID LAYERED BODY PRODUCTION
The present invention addresses the problem of providing a layered body having a higher transmittance and a lower resistivity (high conductivity) than conventional ITO films. Provided is a layered body that is obtained by layering an ITO film and an oxide film, the layered body having a surface resistance of 40 Ω/sq. s or less, and a visible light average transmittance of at least 90%, where the ratio between the ITO film thickness and the oxide film thickness (ITO film thickness/oxide film thickness) is less than 15. Also provided is a layered body that is obtained by layering an ITO film and an oxide film, wherein the layered body is characterized by satisfying R2/R1≤1.0 when R1 is the surface resistance of the layered body that has been subjected to atmosphere annealing at 220°C, and R2 is the surface resistance of the layered body that has been subjected to atmosphere annealing at 550°C.
The present invention provides an electrical and electronic component scrap processing method and an electrical and electronic component scrap processing device which are able to more efficiently select a desired component scrap from among electrical and electronic component scraps by using image recognition processing technology and a selection device. The electrical and electronic component scrap processing method comprises a selection conditions decision step S10 for deciding selection conditions for electrical and electronic component scraps 1, the selection conditions decision step S10 comprising: an image recognition processing step S12 in which component scraps belonging to a specific category of components are identified, using image recognition processing, from among a plurality of captured images capturing the electrical and electronic component scraps 1 which include a plurality of component scraps, and image recognition information including information on detection area, quantity, and scores indicating certainty of the identified component scraps are acquired; a classification step S13 in which the image recognition information of the captured images is used to create classification information of the identified component scraps; and a conditions decision step S14 in which a score threshold for image recognition processing and a detection area threshold for component scraps are decided on the basis of the classification information and processing capability information of a selection device 13 that selects component scraps.
B07C 5/34 - Sorting according to other particular properties
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
35.
MALE PIN FOR CONNECTOR AND MANUFACTURING METHOD OF MALE PIN FOR CONNECTOR
Provided are a male pin for a connector which achieves low insertion force (friction force) when inserted into a female pin and good contact resistance with the female pin, and a manufacturing method of the male pin for the connector. This male pin for the connector is manufactured by plating a base material formed from copper or a copper alloy, said male pin comprising an inclined portion to be inserted into the female pin and a flat portion continuous to the inclined portion, wherein: a first region extending from the inclined portion and including the boundary between the inclined portion and the flat portion and a second region, which comes into electrical contact with the female pin when fitted into the female pin, are plated with dissimilar coatings; the first region has greater hardness than the hardness of the second region; the second region has less contact resistance than the contact resistance of the first region; and at least the first region is coated with oil.
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
C25D 5/50 - After-treatment of electroplated surfaces by heat-treatment
C25D 7/00 - Electroplating characterised by the article coated
H01R 43/16 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for manufacturing contact members, e.g. by punching and by bending
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
This method for treating battery waste includes: a first heat treatment step of heating the battery waste under an atmosphere including at least one selected from the group comprising nitrogen, carbon dioxide, and steam; and, after the first heat treatment step, a second heat treatment step of switching from the atmosphere in the first heat treatment step and heating the battery waste under an atmosphere that is different from said atmosphere and that includes a larger amount of oxygen than in the first heat treatment step.
Provided is a laminate that enhances an electromagnetic wave shielding effect in a low-frequency region. The present invention provides a laminate including at least one non-magnetic metal layer and at least one magnetic metal layer, at least one magnetic metal layer including an amorphous phase.
C22C 45/02 - Amorphous alloys with iron as the major constituent
C22C 45/04 - Amorphous alloys with nickel or cobalt as the major constituent
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
38.
POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, ALL-SOLID-STATE LITHIUM ION BATTERY, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES
abcdee (wherein 1.0 ≤ a ≤ 1.05, 0.8 ≤ b ≤ 0.9, 1.8 ≤ e ≤ 2.2 and (b + c + d) = 1); the coating layer is an oxide of Li and Nb; and the specific surface area X (m2/g) of the positive electrode active material and the Nb content Y (mass%) in the positive electrode active material satisfy the relational expression (2) described below. (2): 0.65 ≤ Y/X ≤ 1.20
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
The present invention provides: a plated material which has low insertion force (frictional force) and good durability at high humidities; and an electronic component. A plated material which is provided with: a base plating layer that is provided on the surface of a base material, while being composed of Ni or an Ni alloy; and a surface layer that is provided on the base plating layer, while being composed of an Sn-In-Cu alloy.
Provided are an indium phosphide substrate in which the development of concave defects is suppressed, a semiconductor epitaxial wafer, a method for producing an indium phosphide single crystal ingot, and a method for producing an indium phosphide substrate. The present invention is an indium phosphide substrate having zero concave defects detected by topography channel on the surface when the diameter is 100 mm or less and at least one surface is irradiated with laser light having a wavelength of 405 nm by S polarization and inspected.
A surface-treated copper foil comprising a copper foil and a surface-treating layer formed on at least one surface of the copper foil. The surface-treating layer has an Sku of 2.50-4.50 and an Str of 0.20-0.40.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
C25D 5/16 - Electroplating with layers of varying thickness
A surface-treated copper foil which comprises: a copper foil; and a surface treatment layer that is formed on at least one surface of the copper foil. The surface treatment layer has an Sku of from 2.50 to 4.50 and an Str of from 0.20 to 0.40.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
C25D 5/16 - Electroplating with layers of varying thickness
Provided are an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer that make it possible to suppress cracking in an indium phosphide substrate caused by irregularities and processing damage in an edge part. The surface roughness of the entire edge-part surface of the indium phosphide substrate has a maximum height Sz of 2.1 μm or less, as measured by a laser microscope.
Provided are an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer, which enable control of contamination that occurs on the surface of an indium phosphide substrate due to residue at an edge section thereof. The indium phosphide substrate is configured such that an edge section of the substrate has a surface roughness of 0.15 μm or less in a root-mean-square height Sq on the entire surface of the edge section, measured by a laser microscope.
The purpose of the present invention is to provide a surface-treated copper foil (1) with which it is possible to reduce peeling from a substrate and to form a fine-pitched circuit pattern. This surface-treated copper foil (1) has a copper coil (2), a first surface treatment layer (3) formed on one surface of the copper coil (2), and a second surface treatment layer (4) formed on the other surface of the copper coil (2). The ratio of the amount of Ni adhering to the first surface treatment layer (3) relative to the amount of Ni adhering to the second surface treatment layer (4) is 0.01-2.0. The surface-treated copper foil (1) has a tensile strength of 235-290 MPa. The copper coil (2) is made of at least 99.0 mass% of Cu, the balance being unavoidable impurities.
The present invention provides a method for processing lithium ion battery waste, said method being capable of effectively precipitating aluminum ions and iron ions in a liquid by means of neutralization and being capable of relatively easily separating the precipitate. A method for processing lithium ion battery waste, said method comprising: a leaching step wherein a battery powder, which is obtained from lithium ion battery waste and contains at least aluminum and iron, is subjected to leaching with use of an acid, and the leaching residue is removed by means of solid-liquid separation, thereby obtaining a leachate that contains at least aluminum ions and iron ions; and a neutralization step wherein a phosphoric acid and/or a phosphate as well as an oxidant are added to the leachate so as to increase the pH thereof to a value within the range of from 2.0 to 3.5, thereby having the aluminum ions and the iron ions in the leachate respectively precipitate as aluminum phosphate and iron phosphate, and a post-neutralization solution is subsequently obtained by removing the neutralization residue by means of solid-liquid separation.
Provided are: an electronic component scrap sorting method with which it is possible to appropriately determine a scrap mixture including multiple types of components; and an electronic component scrap processing method. This electronic component scrap sorting method comprises: a location/shape identification step for identifying the location and shape of each electronic component scrap from among multiple pieces of electronic component scraps having different shapes so as to obtain location/shape identification information that contains location information and shape information of the respective electronic component scraps; a feature analysis step for analyzing at least two features from each of the electronic component scraps so as to obtain feature analysis information; and a sorting step for, on the basis of the location/shape identification information and the feature analysis information, sorting the respective electronic component scraps by predetermined component types by using at least two features associated with one certain type of electronic component scraps that have the same shape and are at the same location.
C30B 11/08 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
50.
SULFIDE-BASED SOLID ELECTROLYTE AND ALL-SOLID-STATE LITHIUM ION BATTERY
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
51.
COPPER POWDER, AND METHOD FOR MANUFACTURING COPPER POWDER
A copper powder containing copper particles, such that, in a solution that has a copper ion concentration of 10 g/L and that is obtained by the copper particles of the copper powder being dissolved by nitric acid, the number of particles having a grain diameter of 1.5 μm or greater as measured using a liquid particle counter is 10000 or less per 10 mL.
B22F 9/24 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
The present invention provides: a plated material which has low insertion force (low friction) and durability at high temperatures; and an electronic component. A plated material which is provided with: a base plating layer that is composed of Ni or an Ni alloy, and is provided on the surface of a base material; an intermediate layer that is composed of an In-Ni-Sn alloy, and is provided on the base plating layer; and a surface layer that is composed of an In-Sn alloy, and is provided on the intermediate layer.
The present invention involves an arsenic flotation step of subjecting, to flotation, slurry in which mineral ores including a copper mineral substance and an arsenic mineral substance are mixed without adding a collector or with a collector added thereto in an amount of 10 g or less per 1 ton of the mineral ores to obtain: a floating ore including the arsenic mineral substance; and a tailing ore including the copper mineral substance.
[Problem] To provide: a copper alloy powder which is a metal powder to be used for deposition modeling by a laser beam system, and which achieves a higher laser absorption rate, while being able to be suppressed in heat transfer through necking; and a method for producing this copper alloy powder. [Solution] A copper alloy powder which contains one or more elements selected from among Cr, Zr and Nb in a total amount of 15 wt% or less, with the balance being made up of Cu and unavoidable impurities, and which is characterized in that: a coating film containing Si atoms is formed on the copper alloy powder; and the Si concentration in the copper alloy powder with the coating film is from 5 wt ppm to 700 wt ppm.
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
The purpose of the present invention is to provide a metal plate with which it is possible to, when a closed space is formed using the metal plate and a resin member, improve the sealing properties between the interior and the exterior of the closed space. A metal plate according to the present invention has, on the surface thereof, a covered region that is covered by a resin member, wherein there is a recess formation region including at least one striated recess that is formed as recessed from the surface of the metal plate so as to intersect a direction in which the surface of the metal plate is scanned from the interior of a closed space, which is formed using a member including the metal plate and the resin member, to the exterior of the closed space.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
The present invention provides a method for producing lithium hydroxide, said method enabling the production of lithium hydroxide from lithium sulfate at a relatively low cost. A method for producing lithium hydroxide from lithium sulfate, said method comprising: a hydroxylation step wherein a lithium hydroxide solution is obtained by reacting the lithium sulfate with barium hydroxide in a liquid; a barium removal step wherein barium ions are removed from the lithium hydroxide solution with use of a cation exchange resin and/or a chelating resin; and a crystal precipitation step wherein lithium hydroxide is precipitated in the lithium hydroxide solution after the barium removal step.
Provided is a method for efficiently promoting a leaching reaction of copper. Equipment for inducing leaching of copper, wherein: the equipment comprises a leaching reaction reactor and a reduction potential controller; the reactor is configured so that a leaching liquid containing iodine and iron is supplied; the reactor is configured to be capable of being tightly shut during the leaching reaction; and the reduction potential controller is configured so that, during the leaching reaction, the reduction potential of the leaching liquid is maintained at 500 mV (based on Ag/AgCl) or higher.
A method for producing a metal mixture solution which contains manganese ions, and cobalt ions and/or nickel ions, said method comprising: an Al removal step wherein aluminum ions are removed from an acidic solution, which is obtained by subjecting a battery powder of a lithium ion battery waste to a leaching step, and which contains at least manganese ions, aluminum ions, and cobalt ions and/or nickel ions, by extracting the aluminum ions into a solvent, while having at least some of the manganese ions in the acidic solution remain in the aqueous phase; and a metal extraction step wherein the equilibrium pH of the extraction residue solution obtained in the Al removal step is adjusted to a value within the range of from 6.5 to 7.5 with use of a solvent that contains a carboxylic acid-based extractant, and after extracting the manganese ions and the cobalt ions and/or the nickel ions in the extraction residue solution into the solvent, the manganese ions and the cobalt ions and/or the nickel ions are back-extracted from the solvent.
A method for producing a mixed metal salt that contains a manganese ion, and a cobalt ion and/or a nickel ion, said method comprising: an Al removal step wherein aluminum ions are removed from an acidic solution, which is obtained by subjecting a battery powder of a lithium ion battery waste to a leaching step, and which contains at least manganese ions, aluminum ions, and cobalt ions and/or nickel ions, by extracting the aluminum ions into a solvent; and a precipitation step wherein the extraction residue solution obtained in the Al removal step is neutralized under the conditions where the pH thereof is less than 10.0, so that a mixed metal salt that contains a metal salt of manganese and a metal salt of cobalt and/or nickel is precipitated.
C04B 35/01 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
Provided are a composition analysis method for electronic/electrical equipment component waste, a processing method for electronic/electrical equipment component waste, a composition analyzer for electronic/electrical equipment component waste, and a processing device for electronic/electrical equipment component waste which can efficiently analyze the composition of component waste in the electronic/electrical equipment component waste in a short time regardless of the experience and skill of each individual. The composition analysis method for electronic/electrical equipment component waste is characterized by comprising: extracting electronic/electrical equipment component waste from a captured image obtained by capturing a plurality of electronic/electrical equipment component wastes including a plurality of types of components; assigning, to the extracted electronic/electrical equipment component waste, a recognition frame including an image encompassing the electronic/electrical equipment component waste and a background surrounding the electronic/electrical equipment component waste; estimating for the respective component types, on the basis of component type area ratio data containing information on the area ratio of the electronic/electrical equipment component waste to the recognition frame, the total area of the electronic/electrical equipment component waste with the assigned recognition frame; multiplying the total area estimation result by assumed weight per unit area for the respective component types; and analyzing the weight ratio of the electronic/electrical equipment component waste for the respective component types to thereby analyze the composition of the electronic/electrical equipment component wastes in the captured image.
B07C 5/00 - Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
B09B 5/00 - Operations not covered by a single other subclass or by a single other group in this subclass
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
63.
HEAT TREATMENT METHOD FOR BATTERY-WASTE AND LITHIUM RECOVERY METHOD
This heat treatment method for battery-waste containing lithium comprises: causing an atmospheric gas containing oxygen and at least one selected from the group consisting of nitrogen, carbon dioxide, and water vapor to flow in a heat treatment furnace in which battery waste is disposed; and heating the battery waste while adjusting the partial pressure of oxygen in the furnace.
B09B 3/00 - Destroying solid waste or transforming solid waste into something useful or harmless
H01M 10/54 - Reclaiming serviceable parts of waste accumulators
64.
METHOD FOR ANALYZING COMPOSITION OF ELECTRONIC/ELECTRICAL APPARATUS COMPONENT LAYER, METHOD FOR PROCESSING ELECTRONIC/ELECTRICAL APPARATUS COMPONENT LAYER, DEVICE FOR ANALYZING COMPOSITION OF ELECTRONIC/ELECTRICAL APPARATUS COMPONENT LAYER, AND DEVICE FOR PROCESSING ELECTRONIC/ELECTRICAL APPARATUS COMPONENT LAYER
Provided are a method for analyzing the composition of an electronic/electrical apparatus component layer, a method for processing an electronic/electrical apparatus component layer, a device for analyzing the composition of an electronic/electrical apparatus component layer, and a device for processing an electronic/electrical apparatus component layer that make it possible to improve the precision of image recognition, and to efficiently analyze the component layer composition of an electronic/electrical apparatus component layer irrespective of the experience or skill of a person. A method for analyzing the composition of an electronic/electrical apparatus component layer, the method including: extracting an electronic/electrical apparatus component layer from within a captured image in which is captured a raw material including a plurality of electronic/electrical apparatus component layers including a plurality of types of components, through use of an image recognition process in which is used a machine learning system, and then performing compositional analysis; and setting the reliability of the machine learning system to a first threshold value when information about the raw material constituting the subject of compositional analysis is reflected in learning data used in learning by the machine learning system, or setting said reliability to a second threshold value lower than the first threshold value and extracting an electronic/electrical apparatus component layer when information about the raw material constituting the subject of compositional analysis is not reflected in the learning data.
B07C 5/00 - Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
B09B 5/00 - Operations not covered by a single other subclass or by a single other group in this subclass
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
65.
METHOD FOR REMOVING LINEAR OBJECTS, DEVICE FOR REMOVING LINEAR OBJECTS, AND METHOD FOR PROCESSING ELECTRONIC/ELECTRICAL EQUIPMENT COMPONENT WASTE
Provided are a method for removing linear objects, a device for removing linear objects, and a method for processing electronic/electrical equipment component waste with which make it possible to improve separation efficiency. The method for removing linear objects comprises: arranging a plurality of filters 3 inside a vibration sieve machine 1 adjacent to one another so as to partially overlap one another along the material supply direction, the filters 3 being provided with a plurality of rods 2 extending at intervals along the supply direction and a beam part 21 for supporting the plurality of rods 2 at one ends of the plurality of rods 2, the other ends 2b of the plurality of rods 2 being free ends; arranging a guide 6 below the tip end of the filter 3 positioned on the most downstream side in the supply direction; supplying materials including at least linear objects and plate-like objects to the inside of the vibration sieve machine 1; applying vibration to the filter 3; and sieving linear objects to the lower side of the sieve in the vibration sieve machine 1 and capturing a lump of linear objects by the guide 6, thereby separating the lump of linear objects from the plate-like objects.
B07B 1/12 - Apparatus having only parallel elements
B07B 9/00 - Combinations of apparatus for screening or sifting or for separating solids from solids using gas currents; General arrangement of plant, e.g. flow sheets
B09B 5/00 - Operations not covered by a single other subclass or by a single other group in this subclass
66.
HIGH-PURITY MOLYBDENUM OXYCHLORIDE AND MANUFACTURING METHOD THEREFOR
322; and by precipitating the molybdenum oxychloride in a recovery chamber by cooling the synthesized molybdenum oxychloride gas, the manufacturing method being characterized in that an impurity trap is provided between the reaction chamber and the recovery chamber, and impurities are removed at the impurity trap. The present invention addresses the problem of providing a high-purity molybdenum oxychloride and a manufacturing method therefor.
C23C 16/08 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material from metal halides
67.
SILVER-PLATED MATERIAL AND METHOD FOR PRODUCING SAME, CONTACT OR TERMINAL COMPONENT, AND AUTOMOBILE
A silver-plated material having a silver coating film formed on a base material. In the silver-plated material, the silver coating film contains 0.05 to 0.25% by mass of sulfur. The plated material can be produced by subjecting the base material to electroplating using a silver plating bath containing a sulfide.
A silver plating material 10 in which a silver plating film 2 is formed on a substrate 1. In the silver plating material 10, the silver plating film 2 has a layered crystal structure in which a plurality of sheet-form layers are layered.
A YAG ceramic joined body comprising a YAG ceramic joined to a YAG ceramic or an optical glass, characterized in that glass is provided as a joining layer and the rate of change of transmittance is 7% or less. The invention addresses the problem of providing a joined body in which a YAG ceramic is joined to a YAG ceramic or a YAG ceramic is joined to an optical glass, wherein the reflection of light at the joining interface is suppressed, and providing a production method therefor.
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
C04B 35/505 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds based on yttrium oxide
H01S 3/06 - Construction or shape of active medium
70.
PACKAGING CONTAINER, PACKAGING METHOD, AND METHOD FOR TRANSPORTING METAL FOIL
Provided are a packaging container capable of enhancing strength thereof, a packaging method, and a method for transporting metal foil. The packaging container is made of a corrugated cardboard and is provided with: a pallet 2 having a leg part 21; a barrel frame 3 arranged on the pallet 2 and having bearing grooves 31 on end wall parts 32 facing each other; and a lid part 4 provided on the barrel frame 3, wherein the barrel frame 3 has a cylindrical barrel frame body 30 and at least one auxiliary frame 34, 35 laminated on the barrel frame body 30.
B65D 19/26 - Rigid pallets without side walls with bodies formed by uniting or interconnecting two or more components
B65D 19/44 - Elements or devices for locating articles on platforms
B65D 85/672 - Containers, packaging elements or packages, specially adapted for particular articles or materials for web or tape-like material wound in flat spiral form on cores
Provided are a packaging container, a packaging method, and a metal foil transport method with which it is possible to suppress damage and deformation of a packaging container and in which the packaging container is stably transported even when the packaging container is transported while suspended in midair. A packaging container made of corrugated cardboard, the packaging container comprising a pallet 2 provided with leg parts 21, a trunk frame 3 that is positioned on the pallet 2 and has bearing grooves 31 formed in end wall parts 32 that face each other, and a lid part 4 provided on the trunk frame 3, the leg parts 21 being positioned further inward than end wall parts 23 of the pallet 2.
B65D 19/26 - Rigid pallets without side walls with bodies formed by uniting or interconnecting two or more components
B65D 19/44 - Elements or devices for locating articles on platforms
B65D 85/672 - Containers, packaging elements or packages, specially adapted for particular articles or materials for web or tape-like material wound in flat spiral form on cores
73.
SURFACE-TREATED COPPER FOIL, COPPER-CLAD LAMINATE PLATE, AND PRINTED WIRING BOARD
A surface-treated copper foil comprising a copper foil and a surface treatment layer formed on at least one surface of the copper foil. In the surface-treated copper foil, the load area ratio SMr2 that separates a protruding valley and the core section of the surface treatment layer is 91-96%.
This surface-treated copper foil comprises: a copper foil; and a surface-treatment layer formed on at least one surface of the copper foil. In the surface-treated copper foil, the load area ratio SMr1 that divides a protruding peak portion from a core portion of the surface-treatment layer is 16-28%.
Provided are: an indium phosphide substrate in which warpage on a back surface of the substrate is favorably suppressed; a semiconductor epitaxial wafer; and a method for manufacturing the indium phosphide substrate. The indium phosphide substrate has a main surface for forming an epitaxial crystal layer and a back surface opposite the main surface, wherein the WARP value of the back surface, which is measured in a state where the back surface of the indium phosphide substrate faces up, is 3.5 μm or less.
B24B 37/10 - Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
Provided are an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for manufacturing an indium phosphide substrate in which warping of the reverse surface of the substrate is satisfactorily suppressed. The indium phosphide substrate has a main surface for forming an epitaxial crystal layer, and a reverse surface that is on the opposite side from the main surface, the indium phosphide substrate being such that the SORI value of the reverse surface is 2.5 μm or less, as measured in a state in which the reverse surface of the indium phosphide substrate is arranged facing upward.
B24B 37/10 - Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
The present invention provides: an indium phosphide substrate which is favorably suppressed in warping of the back surface of the substrate; a semiconductor epitaxial wafer; and a method for producing an indium phosphide substrate. An indium phosphide substrate according to the present invention has a main surface for the formation of an epitaxial crystal layer and a back surface that is on the reverse side of the main surface; and the BOW value of the back surface is from -2.0 μm to 2.0 μm as measured with the back surface of the indium phosphide substrate facing upward.
B24B 37/10 - Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, ALL-SOLID-STATE LITHIUM ION BATTERY, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES
abcde2csscc = 2-10; the intraparticle void fraction is less than 30%; and the average particle diameter (D50) is from 6 μm to 15 μm. With respect to the positive electrode active material (2), the average particle diameter (D50) is from 1 μm to 5 μm.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
Provided is a method for treating a gold-containing ore or a gold-containing refining intermediate produced by subjecting the ore to a refining treatment, the method comprising: a leaching step of leaching gold out from the ore or the refining intermediate using a sulfuric acid solution containing an iodide ion and an iron (III) ion as a leaching solution; an adsorption step of adsorbing iodine and gold in a post-leaching solution produced in the leaching step onto active carbon; and an iodine separation step of separating iodine from the active carbon while leaving gold in the active carbon that has been subjected to the adsorption step.
C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
80.
METHOD FOR PRODUCING HIGH-PURITY COBALT SULFATE SOLUTION, AND METHOD FOR PRODUCING COBALT SULFATE
The present invention is a method for producing, from a cobalt sulfate solution including nickel ions, a high-purity cobalt sulfate solution having a higher purity level of cobalt compared to the aforementioned cobalt sulfate solution. The cobalt/nickel concentration ratio of the cobalt sulfate solution is 100 or greater. This method includes a nickel separation step in which: the cobalt sulfate solution is brought into contact with a solvent containing a bis(2,4,4-trimethylpentyl)phosphinic acid so as to adjust pH; with nickel ions included in the cobalt sulfate solution left in the liquid, cobalt ions are extracted into the solvent; and subsequently, the cobalt ions that have been extracted into the solvent are back-extracted with a sulfuric acid.
H01M 10/54 - Reclaiming serviceable parts of waste accumulators
C22B 3/38 - Treatment or purification of solutions, e.g. obtained by leaching by liquid-liquid extraction using organic compounds containing phosphorus
C22B 3/44 - Treatment or purification of solutions, e.g. obtained by leaching by chemical processes
81.
INSERT MOLDED PRODUCT AND METHOD FOR MANUFACTURING INSERT MOLDED PRODUCT
The insert molded product 1 according to the present invention is provided with: a metal plate 3 that is for a lead frame and that is provided with a penetration space 2 in which a semiconductor chip 51 is disposed; and a resin member 4 having outer resin parts 4a, 4b arranged along at least a portion of the peripheral outside of the penetration space 2 on both surfaces of the metal plate 3, wherein the penetration space 2 has a plurality of cut-outs 5 extending between the outer resin parts 4a, 4b on both surfaces toward the outside from the penetration space 2, the outer resin parts 4a, 4b on both surfaces are coupled to each other by a resin part 4c located inside the cut-outs 5, and a gate mark 6 is provided to each of the positions of the outer resin parts 4a, 4b where at least two cut-outs 5 are present.
B29C 45/14 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
82.
METALLIC PLATE, METAL-RESIN COMPOSITE, SEMICONDUCTOR DEVICE, AND METALLIC PLATE PRODUCTION METHOD
This metallic plate 1 has a resin-covered surface covered with a resin member, wherein the metallic plate 1 has at least three recesses 2 that are formed side by side on the resin-covered surface so as to sink into the resin-covered surface, at least three of the recesses 2 lined up in a recess-array direction Da are arranged apart from each other on the resin-covered surface at multiple types of pitches P1, P2 of different distances.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
83.
MICROCAPSULE FOR LATENT HEAT STORAGE MATERIALS, METHOD FOR PRODUCING SAME, POWDER CONTAINING MICROCAPSULES FOR LATENT HEAT STORAGE MATERIALS, AND HEAT STORAGE DEVICE COMPRISING SAID POWDER
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japan)
Inventor
Nomura,takahiro
Kawaguchi,takahiro
Sakai,hiroki
Cho,shunsuke
Kashiyama,kohei
Sato,kenji
Miya,kazuyuki
Shibuya,yoshitaka
Abstract
244 is 4% or less. The mass ratio is obtained by means of quantitative analysis of the result of an analysis with use of an X-ray diffraction (XRD) apparatus, said quantitative analysis using a reference intensity ratio (RIR) method.
Provided are: an indium phosphide substrate having a superior accuracy of flatness of an orientation flat; and a method for manufacturing an indium phosphide substrate using the same. This indium phosphide substrate is characterized by having a main surface and an orientation flat, wherein: when in a surface excluding a 3 mm-width inward portion from both ends of an orientation flat end surface in the longitudinal direction of the orientation flat end surface, four cross-sectional curves are set at intervals of 1/5 of the substrate thickness, and the maximum heights Pz specified according to JIS B 0601:2013 are measured on the four curves, the difference between the maximum value and the minimum value of the maximum heights Pz on the four cross-sectional curve is no greater than 1.50/10,000 of the longitudinal length of the orientation flat end surface.
The present invention provides a method for producing an aqueous tin methanesulfonate solution by dissolving tin (II) oxide in an aqueous methanesulfonic acid solution, wherein if A is the number of moles of the tin (II) oxide and B is the number of moles of the methanesulfonic acid, the value of B/2A is within the range of from 1.0 to 1.4. This method for dissolving tin (II) oxide into an aqueous methanesulfonic acid solution is able to achieve a high tin ion concentration.
C25D 21/14 - Controlled addition of electrolyte components
C07C 303/32 - Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
C07C 309/04 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing only one sulfo group
86.
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHIDE SUBSTRATE
Provided are: an indium phosphide substrate exhibiting good accuracy in linearity of a ridgeline at which a main surface and an orientation flat are in contact with each other; and a method for producing the indium phosphide substrate. This indium phosphide substrate having a main surface and an orientation flat is characterized in that, in a ridgeline at which the main surface and the orientation flat are in contact with each other, when parts having a length of 3 mm are excluded from both ends of the ridgeline, a plurality of measurement points from a start point to an end point are set at an interval of 2 mm in the ridgeline, a straight line connecting the start point and the end point is defined a reference line, and a distance of each of the measurement points from the reference line is defined as a deviation of the measurement point, a maximum value of the deviation is not more than one thousandth of the length of the ridgeline.
Provided is a sputtering target member having excellent economy and being useful for the formation of non-magnetic layers have an hcp structure and constituting vertical magnetic recording media. This sputtering target member for non-magnetic layer formation has a structure in which a metal phase and an oxide phase are mutually dispersed. The metal phase contains 20–60 mol% Co, 5–30 mol% Pt, and 1–40 mol% Mo and contains a total concentration of at least 25 mol% Mo, Cr, Ru, and B, relative to the total target member composition. The oxide phase volume ratio is 10%–45%.
G11B 5/738 - Base layers characterised by the intermediate layer
G11B 5/84 - Processes or apparatus specially adapted for manufacturing record carriers
H01F 10/30 - Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of intermediate layers
88.
POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, ALL-SOLID-STATE LITHIUM ION BATTERY, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES
abcd22 (wherein M represents at least one element selected from among Mn, V, Mg, Ti and Al; and 1.00 ≤ a ≤ 1.02, 0.8 ≤ b ≤ 0.9 and (b + c + d) = 1 are satisfied); and a cover part that is formed on the surface of the core positive electrode active material. The cover part sequentially comprises, from the surface of the core positive electrode active material, a layer of lithium niobate and a layer of carbon in this order.
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
RAW MATERIAL DISCHARGE DEVICE, METHOD OF PROCESSING OF ELECTRONIC/ELECTRICAL DEVICE COMPONENT SCRAP, AND METHOD OF RAW MATERIAL DISCHARGE FOR ELECTRONIC/ELECTRICAL DEVICE COMPONENT SCRAP
Provided are a raw material discharge device, a method of processing of electronic/electrical device component scrap, and a method of raw material discharge for electronic/electrical device component scrap enabling efficient discharge of respective predetermined amounts of a raw material in which raw materials of a variety of shapes, specific gravities, and shapes are mixed together. The invention is a raw material discharge device 100 that is provided with: a storage unit 1 that is provided, at one end, with a discharge port 11 for discharging raw material, and that stores the raw material; a discharge unit 2 that is arranged on a bottom surface 15 of the storage uni1, that transports the raw material toward the discharge port 11, and that discharges same to the outside of the storage unit 1; and an adjustment unit 3 that is provided with a plurality of struts 31 that extend from above to below the discharge unit 2, and that suppresses some of the raw material with the struts 31 to adjust the amount of raw material that is discharged to the outside of the storage unit 1. The device is able to adjust: a ratio (d1/d2) of an interval (d1) between a strut 31 closest to a side surface 13, 14 of the storage unit 1 and the side surface 13, 14 of the storage unit 1, and an interval (d2) that is narrowest of the intervals between struts 31 of a center part of the storage unit 1, as well as a ratio (H1/H2) of a height (H1) from the floor of the strut 31 closest to the side surface 13, 14 of the storage unit 1 and a smallest height (H2) from the floor of a strut 31 other than the strut 31 closest to the side surface of the storage unit 1, so as to prevent clogging of the raw material being discharged to the outside of the storage unit.
Provided is a power device in which peeling of adhesion between a molded resin and a die pad is reduced by a semiconductor device in which a die-bonding body having a die and a die pad adhered by using a sintered body of a metal powder paste is resin molded, the semiconductor device being such that the sintered body of the metal powder paste is a sintered body of a metal powder paste applied to a surface of the die pad, and the sintered body of the metal powder paste is a sintered body which covers a region on which the die is mounted and a region on which the die is not mounted on the surface of the die pad.
H01L 21/52 - Mounting semiconductor bodies in containers
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
91.
SEMICONDUCTOR WAFER, RADIATION DETECTION ELEMENT, RADIATION DETECTOR, AND PRODUCTION METHOD FOR COMPOUND SEMICONDUCTOR MONOCRYSTALLINE SUBSTRATE
Provided is a CdZnTe monocrystalline substrate that, even when a high voltage is applied thereto, has less leakage current, and that has a resistivity small in variation and stable with respect to changes in the applied voltage value. This semiconductor wafer is characterized by comprising a zinc cadmium telluride monocrystal having a zinc concentration of 4.0-6.5 atom% and a chlorine concentration of 0.1-5.0 wt ppm, and having a resistivity of 1.0 × 107to 7.0 × 108 Ωcm when a voltage of 900 V is applied thereto, wherein the ratio (change ratio) of the resistivity occurring when the applied voltage is 0 V to the resistivity occurring when the applied voltage is 900 V, is 20% or less.
Provided is a CdZnTe monocrystalline substrate that, even when a voltage is applied thereto from a low level to a high level, has less leakage current, exhibits little variation in the resistivity, and is capable of stably maintaining the resistivity with respect to a change in the applied voltage of 0-900 V. This semiconductor wafer is characterized by comprising a zinc cadmium telluride monocrystal having a zinc concentration of 4.0-6.5 atom% and a chlorine concentration of 0.1-5.0 wt ppm, and by having a resistivity of 1.0 × 107to 7.0 × 108 Ωcm with respect to each applied voltage value when a voltage ranging from 0 V to 900 V is applied thereto and having a relative variation coefficient of 100% or less at each resistivity with respect to the applied voltage ranging from 0 V to 900 V.
Provided is a processing method for electronic/electrical device component scrap in which, in a sorting and processing step for smelting processing raw material for sorting, from the electronic/electrical device component scrap, a processing raw material that includes a valuable metal for processing in a smelting step, it is possible to reduce, in advance, component scrap that causes problems with the sorting and processing step. Provided is the processing method for electronic/electrical device component scrap, including a smelting raw material sorting and processing step for sorting the processing raw material that includes a valuable metal that can be processed in a smelting step from the electronic/electrical device component scrap, wherein the processing method for electronic/electrical device component scrap includes using a parallel link robot to remove lump copper wire scrap included in the electronic/electrical device component scrap.
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C22C 1/05 - Mixtures of metal powder with non-metallic powder
C22C 5/04 - Alloys based on a platinum group metal
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
C22C 30/00 - Alloys containing less than 50% by weight of each constituent
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
95.
SPUTTERING TARGET MEMBER, SPUTTERING TARGET, METHOD FOR PRODUCING SPUTTERING TARGET MEMBER, AND METHOD FOR PRODUCING SPUTTERING FILM
C04B 35/04 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
C04B 35/46 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates
This method is for processing lithium ion battery scrap and comprises: a leaching step for leaching lithium ion battery scrap with an acid to obtain a post-leaching liquid that contains at least fluoride ions and aluminum ions; a neutralization step for neutralizing the post-leaching liquid so as to be in the range of pH 5.3-5.5, and removing at least a portion of the aluminum ions from the post-leaching liquid, to obtain a post-neutralization liquid; and an extraction step for performing solvent extraction on the post-neutralization liquid, and extracting the remaining portion of the aluminum ions from the post-neutralization liquid.
This method for determining roasting conditions of copper concentrates is characterized by comprising: a step for roasting arsenic-containing copper concentrates in a furnace while supplying oxygen-containing gas to the furnace, to cause a reaction of volatilizing the arsenic from the copper concentrates; a step for measuring an oxygen partial pressure in the gas exhausted from the furnace with a zirconia oxygen analyzer; and a step for determining that the reaction ends when a period during which the oxygen partial pressure is at most 10-14 atm continues for a given time and thereafter the rate of increase in the oxygen partial pressure exceeds a given value.
This method is for producing lithium carbonate and comprises: a dissolving step for dissolving crude lithium carbonate in a liquid while having carbon dioxide gas supplied therein; and a decarboxylation step for heating the lithium solution obtained in the dissolving step, and removing carbon dioxide. In the dissolving step, the liquid mixed with crude lithium carbonate is retained in a reaction tank. The liquid is stirred using a stirrer. The stirrer has: a cylindrical body arranged in an upright position in the reaction tank; a plurality of rotating blades that are located at an end of the cylindrical body, that are driven to rotate about the axial line of rotation, and that extend radially; a plurality of fixed blades that extend radially and that are fixed and arranged radially outside the rotating blades at the end of the cylindrical body; and a gas supply tube that blows gas toward the rotating blades and the fixed blades.
The present invention provides a sorting machine capable of more easily and efficiently sorting a specific component of a specific shape from among raw materials including various substances of different shapes, and a method for treating electronic/electric device component scraps using this sorting machine. The sorting machine is provided with: a conveyance means 1 provided with a conveyance surface 13 for conveying raw materials 100 including substances of different shapes from a raw material inlet 11 to a reception port 12; and a gate means 2 provided with a cylindrical roller 21 having a rotation function and disposed above the conveyance surface 13 with a fixed space d therebetween so as to pass at least a portion of the raw materials 100 to the reception port 12 side.
B07B 13/04 - Grading or sorting solid materials by dry methods, not otherwise provided for; Sorting articles otherwise than by indirectly controlled devices according to size
100.
OXIDE-BASED POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, METHOD FOR PRODUCING PRECURSOR OF OXIDE-BASED POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, METHOD FOR PRODUCING OXIDE-BASED POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE LITHIUM ION BATTERIES, AND ALL-SOLID-STATE LITHIUM ION BATTERY
axy1-x-y22 (wherein 0.98 ≤ a ≤ 1.05, 0.8 ≤ x ≤ 1.0 and 0 ≤ y ≤ 0.20), while having an average particle diameter D50 of 1.0-5.0 μm, a tap density of 1.6-2.5 g/cc and a circularity of 0.85-0.95.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
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