POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR LITHIUM ION BATTERIES, LITHIUM ION BATTERY, POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR ALL-SOLID LITHIUM ION BATTERIES, ALL-SOLID LITHIUM ION BATTERY, METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION BATTERIES, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID LITHIUM ION BATTERIES
A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1):
A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1):
LiaNibCOcMndMeOf (1)
A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1):
LiaNibCOcMndMeOf (1)
in which formula (1), 1.0≤a≤1.05, 0.8≤b≤0.9, b+c+d+e=1, 1.8≤f≤2.2, 0.0025≤e/(b+c+d+e)≤0.016, and M is at least one selected from Zr, Ta and W;
wherein WDX mapping analysis of positive electrode active material particles in a field of view of 50 μm×50 μm by FE-EPMA indicates that an oxide of the M adheres to surfaces of the positive electrode active material particles, and the oxide of the M is not present as independent particles that do not adhere to the surfaces of the positive electrode active material particles.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
An electromagnetic wave shielding material includes a metal layer for ground connection provided as an outermost layer of a laminate; wherein only one surface of the metal layer for ground connection is laminated on the insulating layer via the adhesive layer, and assuming d1 is a thickness and ε1 is a Young's modulus of the adhesive layer on the one surface, d2 is a thickness and ε2 is a Young's modulus of the metal layer for ground connection, and ε3 is a composite Young's modulus of the adhesive layer on the one surface and the metal layer for ground connection, the following relational expression is satisfied: ε3/ε2>0.60; in which, ε3=ε1 (d1/(d1+d2))+ε2 (d2 (d1+d2)).
Provided is a method for processing lithium ion battery waste, which can effectively precipitate aluminum ions and iron ions in the solution by neutralization and relatively easily separate the precipitate. The method for processing lithium ion battery waste includes: a leaching step of leaching battery powder in an acid, the battery powder containing at least aluminum and iron and being obtained from lithium ion battery waste, and removing a leached residue by solid-liquid separation to obtain a leached solution containing at least aluminum ions and iron ions; and a neutralization step of adding phosphoric acid and/or a phosphate salt and an oxidizing agent to the leached solution, increasing a pH of the leached solution to a range of 2.0 to 3.5, precipitating the aluminum ions and the iron ions in the leached solution as aluminum phosphate and iron phosphate, respectively, and removing a neutralized residue by solid-liquid separation to obtain a neutralized solution.
A sputtering target comprised of a plurality of members including a target material and a base material, wherein the plurality of members includes a first member and a second member laminated to each other, wherein the first member contains Al, and the second member contains Cu, wherein at least one of the first member and the second member contains Mg, wherein the sputtering target includes an alloy layer containing Al and Cu between the first member and the second member, the alloy layer being in contact with the first member and the second member, and wherein the alloy layer further includes an Mg-containing layer containing 5.0 at % or more of Mg in at least a part of the alloy layer.
B23K 20/02 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22C 21/06 - Alloys based on aluminium with magnesium as the next major constituent
H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
5.
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a root mean square height Sq of 0.15 μm or less, as measured by a laser microscopy on the entire surface of the edge part.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
6.
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing cracks in indium phosphide substrates caused by edge irregularities and processing damage. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a maximum height Sz of 2.1 μm or less, as measured by a laser microscopy on the entire surface of the edge part.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22C 9/05 - Alloys based on copper with manganese as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
A method for producing mixed metal salts containing manganese ions and at least one of cobalt ions and nickel ions, the method including: an Al removal step of subjecting an acidic solution containing at least manganese ions and aluminum ions, and at least one of cobalt ions and nickel ions, to removal of the aluminum ions by extracting the aluminum ions into a solvent, the acidic solution being obtained by subjecting battery powder of lithium ion batteries to a leaching step; and a precipitation step of neutralizing an extracted residual liquid obtained in the Al removal step under conditions where a pH is less than 10.0, to precipitate mixed metal salts comprising a metal salt of manganese and a metal salt of at least one of cobalt and nickel.
A copper powder containing copper particulates, wherein the copper powder has a number of particles with a particle size of 1.5 pm or more of 10000 or less per 10 mL of a solution, as measured in the solution using an in-liquid particle counter, the solution having a copper ion concentration of 10 g/L and being obtained by dissolving the copper particulates of the copper powder in nitric acid.
B22F 9/24 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
B22F 9/04 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
10.
METHOD FOR RECOVERING LITHIUM FROM LITHIUM ION BATTERY SCRAP
A method for recovering lithium from lithium ion battery scrap according to this invention comprises subjecting lithium ion battery scrap to a calcination step, a crushing step, and a sieving step sequentially carried out, wherein the method comprises, between the calcination step and the crushing step, between the crushing step and the sieving step, or after the sieving step, a lithium dissolution step of bringing the lithium ion battery scrap into contact with water and dissolving lithium contained in the lithium ion battery scrap in the water to obtain a lithium-dissolved solution; a lithium concentration step of solvent-extracting lithium ions contained in the lithium-dissolved solution and stripping them to concentrate the lithium ions to obtain a lithium concentrate; and a carbonation step of carbonating the lithium ions in the lithium concentrate to obtain lithium carbonate.
Provided is a method for selecting arsenic-containing minerals.
Provided is a method for selecting arsenic-containing minerals.
A peptide comprising an amino acids sequence according to the following formula:
Provided is a method for selecting arsenic-containing minerals.
A peptide comprising an amino acids sequence according to the following formula:
(T,S,N,Q)-(L,I,V,F,A)-(E,D)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(L,I,V,F,A)-(L,I,V,F,A)-(R,H,K)-(T,S,N,Q)-(T,S,N,Q)
Provided is a method for selecting arsenic-containing minerals.
A peptide comprising an amino acids sequence according to the following formula:
(T,S,N,Q)-(L,I,V,F,A)-(E,D)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(R,K,N,M,D,C,P,Q,S,E,T,G,W,H,Y)-(L,I,V,F,A)-(L,I,V,F,A)-(L,I,V,F,A)-(R,H,K)-(T,S,N,Q)-(T,S,N,Q)
wherein one amino acid is respectively selected from each group defined by paired parentheses.
C07K 7/08 - Linear peptides containing only normal peptide links having 12 to 20 amino acids
C12N 15/70 - Vectors or expression systems specially adapted for E. coli
12.
METHOD FOR DISSOLVING LITHIUM COMPOUND, METHOD FOR MANUFACTURING LITHIUM CARBONATE, AND METHOD FOR RECOVERING LITHIUM FROM LITHIUM ION SECONDARY CELL SCRAP
A method for dissolving a lithium compound according to the present invention includes bringing a lithium compound into contact with water or an acidic solution, and feeding, separately from the lithium compound, a carbonate ion to the water or the acidic solution to produce carbonic acid, and allowing the carbonic acid to react with the lithium compound to produce lithium hydrogen carbonate.
A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C04B 35/58 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides
Provided is a method for efficiently promoting a leaching reaction of copper. Equipment for leaching copper includes a reactor for leaching reaction and a controller for oxidation-reduction potential. The reactor is configured to be provided with a leaching solution containing iodine and iron. The reactor is configured to be capable of being tightly sealed during the leaching reaction. The controller for oxidation-reduction potential is configured so that, during the leaching reaction, the oxidation-reduction potential of the leaching solution can be maintained at 500 mV (based on Ag/AgCl reference) or higher.
A method for producing a mixed metal solution containing manganese ions and at least one of cobalt ions and nickel ions, the method including: an Al removal step of subjecting an acidic solution containing at least manganese ions and aluminum ions, and at least one of cobalt ions and nickel ions, to removal of the aluminum ions by extracting the aluminum ions into a solvent while leaving at least a part of the manganese ions in the acidic solution in an aqueous phase, the acidic solution being obtained by subjecting battery powder of lithium ion batteries to a leaching step; and a metal extraction step of bringing an extracted residual liquid obtained in the Al removal step to an equilibrium pH of 6.5 to 7.5 using a solvent containing a carboxylic acid-based extracting agent, extracting at least one of the manganese ions and at least one of the cobalt ions and the nickel ions into the solvent, and then back-extracting the manganese ions and at least one of the cobalt ions and nickel ions.
Provided are sulfide-based solid electrolyte with good ionic conductivity and an all-solid lithium ion battery using the same. A sulfide-based solid electrolyte having an argyrodite-type structure, wherein a composition of the sulfide-based solid electrolyte is represented by the formula:
Provided are sulfide-based solid electrolyte with good ionic conductivity and an all-solid lithium ion battery using the same. A sulfide-based solid electrolyte having an argyrodite-type structure, wherein a composition of the sulfide-based solid electrolyte is represented by the formula:
Li8GeS5-xTe1+x
Provided are sulfide-based solid electrolyte with good ionic conductivity and an all-solid lithium ion battery using the same. A sulfide-based solid electrolyte having an argyrodite-type structure, wherein a composition of the sulfide-based solid electrolyte is represented by the formula:
Li8GeS5-xTe1+x
in which: −0.5≤x<0, 0
A method for heat-treating battery waste containing lithium includes: allowing an atmospheric gas containing oxygen and at least one selected from the group consisting of nitrogen, carbon dioxide and water vapor to flow in a heat treatment furnace in which the battery waste is arranged, and heating the battery waste while adjusting an oxygen partial pressure in the furnace.
The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.
Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-αPtα)1-βGeβ, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (SGe30mass %/SGe) of 0.5 or less. The ratio (SGe30mass %/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass %) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.
Provided is a method for producing lithium hydroxide, which can obtain lithium hydroxide from lithium sulfate with a relatively low cost. A method for producing lithium hydroxide from lithium sulfate includes: a hydroxylation step of allowing the lithium sulfate to react with barium hydroxide in a liquid to provide a lithium hydroxide solution; a barium removal step of removing barium ions in the lithium hydroxide solution using a cation exchange resin and/or a chelate resin; and a crystallization step of precipitating lithium hydroxide in the lithium hydroxide solution that has undergone the barium removal step.
Provided is a method for removing a linear object, a device for removing a linear object, and a method for processing electronic/electrical equipment component waste, which can improve separation efficiency. The method for removing linear objects including: arranging a plurality of filters 3 in a vibrating sieve machine 1 such that the filters 3 are adjacent to each other so as to partially overlap with each other in a feed direction of a raw material, each of the filters 3 comprising a plurality of rods 2 extending at distances in the feed direction of the raw material and a beam portion 21 supporting the plurality of rods 1 at one ends of the plurality of the rods 2, the other ends of the plurality of the rods 2 being free ends; arranging a guide 6 below a tip of one of the filters 3 located on a most downstream side in the feed direction; feeding the raw material containing at least linear objects and plate-form objects into the vibrating sieve machine 1; and sorting the linear objects and the plate-form objects by vibrating the filters 3, sieving the linear objects to an under-sieve side of the vibrating sieve machine 1, and capturing lumpy linear objects with the guide.
B07B 1/12 - Apparatus having only parallel elements
B07B 1/36 - Moving screens not otherwise provided for, e.g. swinging, reciprocating, rocking, tilting, or wobbling screens jigging or moving to-and-fro in more than one direction
An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 μm or more to 130 μm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and wherein the indium phosphide substrate has a thickness of 330 μm or moreto 700 μm or less.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
Provided are a packaging container, a packaging method, and a method for carrying metal foil, which can suppress damage and deformation of the packaging container and enable stable carrying even if the packaging container is carried while suspending it in the midair. A packaging container made of corrugated cardboard includes: a pallet 2 having leg portions 21; a body frame 3 arranged on the pallet 2, the body frame 3 having bearing grooves 31 at end wall portions 32 opposing to each other; and a lid portion 4 provided on the body frame 3, wherein each of the leg portions 21 is arranged on an inner side than each of the end wall portions 23 of the pallet 2.
B65D 19/00 - Pallets or like platforms, with or without side walls, for supporting loads to be lifted or lowered
B65D 19/20 - Rigid pallets with side walls, e.g. box pallets with bodies formed by uniting or interconnecting two or more components made wholly or mainly of paper
B65D 19/36 - Pallets comprising a flexible load carrier extending between guide elements, e.g. guide tubes
B65D 19/44 - Elements or devices for locating articles on platforms
B65D 5/44 - Integral, inserted or attached portions forming internal or external fittings
B65D 5/50 - Internal supporting or protecting elements for contents
B65D 85/66 - Containers, packaging elements or packages, specially adapted for particular articles or materials for rolls of floor covering
B65D 85/672 - Containers, packaging elements or packages, specially adapted for particular articles or materials for web or tape-like material wound in flat spiral form on cores
A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb2O5 as a metal oxide component.
G11B 5/706 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
G11B 5/851 - Coating a support with a magnetic layer by sputtering
H01F 41/18 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
25.
Mg2Si SINGLE CRYSTAL, Mg2Si SINGLE CRYSTAL SUBSTRATE, INFRARED LIGHT RECEIVING ELEMENT AND METHOD FOR PRODUCING Mg2Si SINGLE CRYSTAL
Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.
C30B 11/02 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method without using solvents
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
26.
RAW MATERIAL DISCHARGE DEVICE, METHOD OF PROCESSING OF ELECTRONIC/ELECTRICAL DEVICE COMPONENT SCRAP, AND METHOD OF RAW MATERIAL DISCHARGE FOR ELECTRONIC/ELECTRICAL DEVICE COMPONENT SCRAP
Provided are a raw material discharge device, a method of processing an electronic and electrical device component scrap, and a raw material discharging method of an electronic and electrical device component scrap, which are capable of efficiently discharging the raw material having various shapes, specific gravities and shapes in each fixed amount. A raw material discharge device including: a storage unit 1 which stores a raw material and comprising a discharge port 11 at one end; a discharge unit 2 arranged at a bottom surface 15 of the storage unit 1, which conveys the raw material toward the discharge port 11 and discharges the raw material to an outside of the storage unit 1; an adjustment unit 3 including a plurality of struts 31 extending from above to below the discharge unit 2 and adjusting an amount of the raw material to be discharged by holding a part of the raw material with the struts 31; wherein a ratio (d1/d2) of a distance (d1) between a strut 31 closest to a side surface 13, 14 of the storage unit 1 and the side surface 13, 14 of the storage unit 1 to a narrowest distance (d2) between the struts 31 in a center portion of the storage unit 1, and a ratio (H1/H2) of a height of the strut 31 closest to the side surface 13, 14 of the storage unit 1 from a floor to a minimum height (H2) of a strut 31 which is other than the strut 31 closest to the side surface of the storage unit 1 from the floor are respectively adjustable so as to prevent clogging of the raw material being discharged to the outside of the storage unit 1.
A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.
A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.
Amount of microcracks=frequency of microcracks×average depth of microcracks
A method for processing ores containing gold or refining intermediates containing gold, the refining intermediate being obtained by subjecting the ores to a refining process, wherein the method includes: a leaching step of leaching gold from the ores or the refining intermediates using a sulfate solution containing iodide ions and iron (III) ions as a leaching solution; an adsorption step of adsorbing iodine and gold in the leached solution obtained in the leaching step on activated carbon; and an iodine separation step of separating iodine from the activated carbon while leaving gold on the activated carbon that has undergone the adsorption step.
C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
B01J 20/20 - Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising carbon obtained by carbonising processes
Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤110° for all of the planes A where a distance from the main surface is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, and wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of from 200 to 350 μm.
Provided is a method for processing electronic and electrical device component scrap according to an embodiment of the present invention includes a smelting raw material sorting step of sorting a processing raw material containing valuable metals processable in a smelting step from the electronic and electrical device component scrap, wherein the method comprises removing lump copper wire scrap contained in the electronic and electrical device component scrap using a parallel link robot.
Provided is an indium phosphide substrate having good accuracy of flatness of the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a difference between maximum and minimum values of a maximum height Pz in each of four cross-sectional curves is less than or equal to 1.50/10000 of a length in a longitudinal direction of an orientation flat end face, wherein the four cross-sectional curves are set at intervals of one-fifth of a thickness of the substrate on a surface excluding a width portion of 3 mm inward from both ends of the orientation flat end face in the longitudinal direction of the orientation flat end face, and the maximum height Pz in each of the four cross-sectional curves is measured in accordance with JIS B 0601:2013.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
32.
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHIDE SUBSTRATE
Provided is an indium phosphide substrate having good linearity accuracy of a ridge line where the main surface is in contact with the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a maximum value of deviation is less than 1/1000 of a length of a ridge line where the main surface is in contact with the orientation flat, when a plurality of measurement points are set at intervals of 2 mm from a start point to an end point at the ridge line, except for a length portion of 3 mm inward from both ends of the ridge line, and based on a reference line which is a straight line connecting the start point and the end point, a distance of each measurement point from the reference line is defined as the deviation of each measurement point.
Provided is a sputtering target capable of reducing generation of particles, and a method for producing the same. The sputtering target includes: 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and at least B6O as an oxide component.
C22C 5/04 - Alloys based on a platinum group metal
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
C22C 30/00 - Alloys containing less than 50% by weight of each constituent
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
34.
SORTING MACHINE AND METHOD FOR TREATING ELECTRONIC/ELECTRIC DEVICE COMPONENT SCRAPS
Provided is a sorting machine capable of more easily and efficiently sorting specific parts having a specific shape from raw materials containing various substances having different shapes, and a method for treating electronic and electric device component scraps using the sorting machine. The sorting machine includes a conveying device 1 having a conveying surface 13 which conveys raw materials containing substances having different shapes from a raw material inlet 11 to a receiving port 12; and a gate device 2 provided with a cylindrical roll portion 21 having a rotating function arranged at a certain distance d on the conveying surface to allow at least a part of the raw materials 100 to pass through to the receiving port 12.
B03C 1/23 - Magnetic separation acting directly on the substance being separated with material carried by travelling fields, e.g. generated by stationary magnetic coils; Eddy-current separators, e.g. sliding ramp
B03C 1/18 - Magnetic separation acting directly on the substance being separated with material carriers in the form of belts with magnets moving during operation
35.
METHOD FOR PROCESSING ELECTRONIC/ELECTRICAL DEVICE COMPONENT SCRAPS
Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes removing powdery objects contained in electronic and electrical device component scrap prior to a step of separating non-metal objects or metal objects from the electronic and electrical device component scrap containing the metal objects and the non-metal objects, using a metal sorter including: a metal sensor, a color camera, an air valve, and a conveyor.
Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes sorting electronic and electrical device component scrap by wind powder sorting to remove plate-shaped materials containing valuable metals included in the electronic and electrical device component scrap, and then sorting the resulting sorted objects by magnetic sorting.
B07B 4/02 - Separating solids from solids by subjecting their mixture to gas currents while the mixtures fall
B07B 9/00 - Combinations of apparatus for screening or sifting or for separating solids from solids using gas currents; General arrangement of plant, e.g. flow sheets
B02C 23/20 - Adding fluid, other than for crushing or disintegrating by fluid energy after crushing or disintegrating
B03C 1/24 - Magnetic separation acting directly on the substance being separated with material carried by travelling fields, e.g. generated by stationary magnetic coils; Eddy-current separators, e.g. sliding ramp with material carried by travelling fields
Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:
the {111} area ratio=total area of crystal grains having a {111} plane oriented in the normal direction in the measured regions/total area of the measured regions Equation (1);
Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life.
In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.5 or less, and the {111} area ratio of each of the upper, central and lower portions is determined by dividing a cross section of a plate-shaped sputtering target perpendicular to a sputtering surface into three equal portions: the upper portion, the central portion and the lower portion from a sputtering surface side in a normal direction of the sputtering surface at an intermediate position between a center and an outer circumference of the sputtering surface of the plate-shaped sputtering target, and measuring a crystal orientation distribution of each of measured regions of the upper portion, the central portion, and the lower portion using an EBSD method:
the {111} area ratio=total area of crystal grains having a {111} plane oriented in the normal direction in the measured regions/total area of the measured regions Equation (1);
the rate of change=[maximum value−minimum value]/minimum value Equation (2).
A method for recovering at least cobalt of valuable metals, cobalt and nickel, from an acidic solution obtained by subjecting waste containing positive electrode materials for lithium ion secondary batteries to a wet process, the acidic solution comprising cobalt ions, nickel ions and impurities, the method including: a first extraction step for Co recovery, the first extraction step being for extracting cobalt ions by solvent extraction from the acidic solution and stripping the cobalt ions; and a second extraction step for Co recovery, the second extraction step being for extracting cobalt ions by solvent extraction from a stripped solution obtained in the first extraction step for Co recovery and stripping the cobalt ions, wherein the first extraction step for Co recovery includes: a solvent extraction process for extracting cobalt ions in the acidic solution into a solvent; a scrubbing process for scrubbing the solvent that has extracted the cobalt ions; and a stripping process for stripping the cobalt ions in the solvent after the scrubbing into a solution.
A method for recovering at least cobalt of valuable metals, cobalt and nickel, from an acidic solution obtained by subjecting waste containing positive electrode materials for lithium ion secondary batteries to a wet process, the acidic solution comprising cobalt ions, nickel ions and impurities, wherein the method includes: a first extraction step for Co recovery, the first extraction step being for extracting cobalt ions by solvent extraction from the acidic solution and stripping the cobalt ions; an electrolytic step for Co recovery, the electrolytic step being for providing electrolytic cobalt by electrolysis using a stripped solution obtained in the first extraction step for Co recovery as an electrolytic solution; a dissolution step for Co recovery, the dissolution step being for dissolving the electrolytic cobalt in an acid; and a second extraction step for Co recovery, the second extraction step being for extracting cobalt ions by solvent extraction from a cobalt dissolved solution obtained in the dissolution step for Co recovery and stripping the cobalt ions.
C22B 3/00 - Extraction of metal compounds from ores or concentrates by wet processes
C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
H01M 10/54 - Reclaiming serviceable parts of waste accumulators
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
C25C 1/08 - Electrolytic production, recovery or refining of metals by electrolysis of solutions of iron group metals, refractory metals or manganese of nickel or cobalt
41.
Surface-treated metal powder and conductive composition
There is provided a more versatile technique that is useful for enhancing the sintering delay property of a metal powder. A metal powder surface-treated with at least one coupling agent comprising Si, Ti, Al or Zr, wherein a total adhesion amount of Si, Ti, Al and Zr is 200 to 10,000 μg with respect to 1 g of the surface-treated metal powder, wherein a 1% by mass aqueous solution of the coupling agent indicates a pH of 7 or less, and wherein a sintering starting temperature is 500° C. or higher.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 5/14 - Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
B22F 1/103 - Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material includes one or more metal elements, and has a crystal grain size of 10 μm or less.
A method for processing positive electrode active material waste of lithium ion secondary batteries, the waste containing cobalt, nickel, manganese and lithium, the method including: a carbon mixing step of mixing the positive electrode active material waste in the form of powder with carbon to obtain a mixture having a ratio of a mass of carbon to a total mass of the positive electrode active material waste and the carbon of from 10% to 30%; a roasting step of roasting the mixture at a temperature of from 600° C. to 800° C. to obtain roasted powder; a dissolution step including a first dissolution process of dissolving lithium in the roasted powder in water or a lithium-containing solution, and a second dissolution process of dissolving the lithium in a residue obtained in the first dissolution process in water; and an acid leaching step of leaching a residue obtained in the lithium dissolution step with an acid.
Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 μm or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.
Provided is a titanium copper foil which has required high strength when used as a spring, and has improved etching uniformity, and which can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules. The titanium copper foil contains from 1.5 to 5.0% by mass of Ti and from 10 to 3000 pm by mass of Fe, the balance being Cu and inevitable impurities, wherein the titanium copper foil has crystal orientation having A of from 10 to 40, in which A is represented by the following equation (1) when measuring a rolled surface by an X-ray diffraction method:
Provided is a titanium copper foil which has required high strength when used as a spring, and has improved etching uniformity, and which can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules. The titanium copper foil contains from 1.5 to 5.0% by mass of Ti and from 10 to 3000 pm by mass of Fe, the balance being Cu and inevitable impurities, wherein the titanium copper foil has crystal orientation having A of from 10 to 40, in which A is represented by the following equation (1) when measuring a rolled surface by an X-ray diffraction method:
A=β{220}/(β{200}+β{311}) Equation (1)
Provided is a titanium copper foil which has required high strength when used as a spring, and has improved etching uniformity, and which can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules. The titanium copper foil contains from 1.5 to 5.0% by mass of Ti and from 10 to 3000 pm by mass of Fe, the balance being Cu and inevitable impurities, wherein the titanium copper foil has crystal orientation having A of from 10 to 40, in which A is represented by the following equation (1) when measuring a rolled surface by an X-ray diffraction method:
A=β{220}/(β{200}+β{311}) Equation (1)
in which the β{220}, the β{200}, and the β{311} represent half-value widths of X-ray diffraction peaks at a {220} crystal plane, a {200} crystal plane, and a {311} crystal plane, respectively.
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
G02B 7/09 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification adapted for automatic focusing or varying magnification
APPARATUS FOR ANALYZING COMPOSITION OF ELECTRONIC AND ELECTRICAL DEVICE PART SCRAPS, DEVICE FOR PROCESSING ELECTRONIC AND ELECTRICAL DEVICE PART SCRAPS, AND METHOD FOR PROCESSING ELECTRONIC AND ELECTRICAL DEVICE PART SCRAPS
Provided is an apparatus for analyzing composition of electronic and electrical device part scraps which can determine a composition of part scraps in the electronic and electrical device part scraps in a short time, a device for processing electronic and electrical device part scraps, and a method for processing electronic and electrical device part scraps using those devices. An apparatus for analyzing a composition of electronic and electrical device part scraps including a classification data storage means for storing a classification data for extracting images of a plurality of component types of electronic and electrical device part scraps from a captured image of electronic and electrical device part scraps composed of the plurality of component types and classifying extracted images into each of the plurality of component types, a classification means for classifying the extracted images into each of the plurality of component types extracted from the captured image of the electronic and electrical device part scraps according to the classification data, and analysis means for analyzing at least one of an area, a number, an average particle size, and weight ratio of each of the plurality of component types classified by the classification means.
A sputtering target according to the present invention contains Co and one or more metals selected from the group consisting of Cr and Ru, as metal components, wherein a molar ratio of the content of the one or more metals to the content of Co is ½ or more, and wherein the sputtering target contains Nb2O5 as a metal oxide component.
G11B 5/851 - Coating a support with a magnetic layer by sputtering
H01F 41/18 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
48.
Raw material supply device, device for processing electronic and electrical device part scraps, and method for processing electronic and electrical device part scraps
A raw material supply device and a device for processing electronic and electrical device part scraps, which can control dropping positions of a raw material containing substances having different shapes and specific gravities, and a method for processing electronic and electrical device part scraps using those devices. The raw material supply device includes a receiving port, a discharge port, a first guide surface, and a second guide surface on a surface opposing to the first guide surface. The processing device includes a first conveying unit, a raw material supply device, a second conveying unit, and a pyramid-shaped disperser. The processing method comprises a sorting step, wherein the sorting step comprises dropping the electronic and electrical device part scraps onto a plurality of dispersion surfaces of a pyramid-shaped disperser, and dispersing the electronic and electrical device part scraps in a plurality of directions on a conveying surface.
Provided is a rolled copper foil for a lithium ion battery current collector, which has good adhesion to a negative electrode active material, generates less metal powder during ultrasonic welding, and has a rust prevention property. In the rolled copper foil for a lithium ion battery current collector, a surface of the copper foil has a BTA film, the BTA film has a thickness of 0.6 nm or more and 4.6 nm or less, and the rolled copper foil satisfies the following relationships: 40≤wet tension [mN]/m]+thickness of BTA film [nm]×10≤80; 0.01≤arithmetic average roughness Ra [μm]≤0.25; and wet tension [mN/m]≥35.
C21D 9/02 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for springs
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
2) for 1 minute. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/02 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C25D 3/04 - Electroplating; Baths therefor from solutions of chromium
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has a root mean square gradient of roughness curve elements RΔq according to JIS B0601:2013 of 5 to 28°. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.
H05K 1/09 - Use of materials for the metallic pattern
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/02 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B23B 27/14 - Cutting tools of which the bits or tips are of special material
C03C 17/10 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
E06B 3/67 - Units comprising two or more parallel glass or like panes in spaced relationship, the panes being permanently secured together, e.g. along the edges characterised by additional arrangements or devices for heat or sound insulation
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C25D 3/04 - Electroplating; Baths therefor from solutions of chromium
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
Provided is a corrosion-resistant CuZn alloy, in which: the Zn content is 36.8 to 56.5 mass % and the balance is Cu and inevitable impurities; and the β-phase surface area percentage is 99.9% or greater.
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
2. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.
H05K 1/09 - Use of materials for the metallic pattern
H05K 1/14 - Structural association of two or more printed circuits
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/02 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
H05K 3/36 - Assembling printed circuits with other printed circuits
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/16 - Electroplating with layers of varying thickness
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C25D 3/04 - Electroplating; Baths therefor from solutions of chromium
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has L* of a CIE L*a*b* color space of 44.0 to 84.0. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to a surface of the surface treated copper foil 1 opposite to the first surface treatment layer 3.
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
H05K 3/02 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C25D 3/04 - Electroplating; Baths therefor from solutions of chromium
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
G11B 5/706 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
H01F 1/10 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites
H01F 41/18 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
G11B 5/65 - Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
C04B 35/01 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
57.
Method For Preparing Package Of Sputtering Target, And Method For Transporting Same
A method for preparing a package that can effectively suppress surface alteration even in a sputtering target whose surface is likely to be altered by moisture such as a sputtering target comprising an oxide of boron is provided. A method for preparing a package of sputtering target, including a step 1 of housing a sputtering target in a first packaging bag made of a film having a water vapor permeability of 1 g/(m2·24 h) or less, and then vacuum sealing an opening of the first packaging bag; and a step 2 of housing the first packaging bag which has been vacuum sealed in the step 1, in a second packaging bag made of a film having a water vapor permeability of 1 g/(m2·24 h) or less, and then enclosing one or more cushion gases selected from a group consisting of air and inert gas in the second packaging bag, and sealing an opening of the second packaging bag.
B65B 31/04 - Evacuating, pressurising or gasifying filled containers or wrappers by means of nozzles through which air or other gas, e.g. an inert gas, is withdrawn or supplied
Provided is a sputtering target containing 0.05 at % or more of Bi, and having a total content of metal oxides of from 10 vol % to 70 vol %, the balance containing at least Ru.
C04B 35/44 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminates
C04B 35/505 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds based on yttrium oxide
60.
Linear object removal method, linear object removal device, and electronic/electric apparatus component scrap processing method
b of the plurality of rods 2 being free ends; and feeding a raw material containing at least wire-form objects and plate-form objects into the vibrating sieve machine 1; and vibrating the filters 3 to sieve out the wire-form objects toward an under-sieve side of the vibrating sieve machine 1.
B07B 1/12 - Apparatus having only parallel elements
B07B 1/36 - Moving screens not otherwise provided for, e.g. swinging, reciprocating, rocking, tilting, or wobbling screens jigging or moving to-and-fro in more than one direction
B09B 3/00 - Destroying solid waste or transforming solid waste into something useful or harmless
61.
COPPER POWDER, METHOD FOR MANUFACTURING COPPER POWDER, AND METHOD FOR MANUFACTURING SOLID SHAPED OBJECT
The present invention provides a copper powder which is capable of fusion bonding with a low energy laser by enabling heat to be efficiently inputted with a high absorption rate for laser irradiation and has high convenience in handling, and provides a method for manufacturing the copper powder. One embodiment of the present invention is a copper powder, having an absorption rate for light having a wavelength λ=1060 nm of 18.9% to 65.0%, and an index, which is indicated by (the absorption rate for light having a wavelength λ=1060 nm)/(an oxygen concentration), of 3.0 or more.
Provided is a joined body of a target material and a backing plate, the joined body comprising: a target material containing Ta; and a backing plate joined to the target material, wherein a tensile strength between the target material and the backing plate is 20 kg/mm2 or more, and the target material has an average hydrogen content of 7 ppm by volume or less.
A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb2O5 as a metal oxide component.
G11B 5/851 - Coating a support with a magnetic layer by sputtering
G11B 5/735 - Base layers characterised by the back layer
G11B 5/706 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
H01F 41/18 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
64.
Thin film comprising titanium oxide, and method of producing thin film comprising titanium oxide
A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.
H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
G11B 7/2548 - Record carriers characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
C04B 35/46 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates
G11B 7/2578 - Record carriers characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers, sensitising layers or dielectric layers which are protecting the recording layers consisting essentially of inorganic materials
G11B 7/254 - Record carriers characterised by the selection of the material of layers other than recording layers of protective topcoat layers
65.
Polycrystalline YAG sintered body and production method thereof
−1 or less. An object of an embodiment of the present invention is to provide a large and transparent polycrystalline YAG sintered body and its production method.
C04B 35/50 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds
C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/22 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
67.
Compound semiconductor and method for producing single crystal of compound semiconductor
A method for recovering lithium from lithium ion battery scrap according to this invention comprises subjecting lithium ion battery scrap to a calcination step, a crushing step, and a sieving step sequentially carried out, wherein the method comprises, between the calcination step and the crushing step, between the crushing step and the sieving step, or after the sieving step, a lithium dissolution step of bringing the lithium ion battery scrap into contact with water and dissolving lithium contained in the lithium ion battery scrap in the water to obtain a lithium-dissolved solution; a lithium concentration step of solvent-extracting lithium ions contained in the lithium-dissolved solution and stripping them to concentrate the lithium ions to obtain a lithium concentrate; and a carbonation step of carbonating the lithium ions in the lithium concentrate to obtain lithium carbonate.
A titanium copper according to the present invention contains from 1.5 to 5.0% by mass of Ti, the balance being of Cu and inevitable impurities, wherein the titanium copper has a layered structure of Cu and Ti where in a Ti concentration curve obtained by analyzing a cross section parallel to a rolling direction along a thickness direction by STEM-EDX, a lower concentration Ti layer having a Ti concentration less than an average value of Ti concentrations in the Ti concentration curve and a higher concentration Ti layer having a Ti concentration equal to or higher than the average value of the Ti concentrations in the Ti concentration curve are alternately present in the thickness direction, and wherein in the cross section parallel to the rolling direction, a number of higher concentration Ti layers is 5 layers per 500 nm in the thickness direction.
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
A method for recovering lithium according to this invention comprises separating sodium from a lithium-containing solution containing lithium ions and sodium ions to recover lithium, wherein the method comprises a solvent extraction step including: at least three-stage extraction process having a first extraction process, a second extraction process, and a third extraction process; and a lithium back extraction stage of back extracting the lithium ions from a solvent that have undergone the at least three-stage extraction process; and wherein, in the extraction process, the solvent undergoes the first extraction process, the second extraction process, and the third extraction process in this order, and a solution as the lithium-containing solution undergoes the respective processes in opposite order to the order of the solvent.
A pure copper powder with a Si coating formed thereon, wherein a Si adhesion amount is 5 wtppm or more and 200 wtppm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si is 3 or less. An object of the present invention is to provide a pure copper powder with a Si coating formed thereon and a production method thereof, as well as an additive manufactured object using such pure copper powder capable of suppressing the partial sintering of the pure copper powder caused by the preheating thereof in additive manufacturing based on the electron beam (EB) method, and suppressing the loss of the degree of vacuum caused by carbon (C) during the molding process.
B22F 1/102 - Metallic powder coated with organic material
73.
Method for removing wire-form objects, device for removing wire-form objects, and method for processing electronic/electrical apparatus component scrap
Provided is a method for removing wire-form objects, a device for removing wire-form objects, and a method for processing electronic/electrical apparatus component waste, which can efficiently sort wire-form objects from sorting target objects having various shapes. The method for removing wire-form objects includes: arranging a filter in a vibrating sieve machine, the filter including a plurality of rods extending at distances in a feed direction of a raw material; and placing a raw material containing at least wire-form objects and plate-form objects onto the filter, and vibrating the filter to sieve out the wire-form objects under a sieve.
B07B 1/12 - Apparatus having only parallel elements
B07B 1/36 - Moving screens not otherwise provided for, e.g. swinging, reciprocating, rocking, tilting, or wobbling screens jigging or moving to-and-fro in more than one direction
B09B 5/00 - Operations not covered by a single other subclass or by a single other group in this subclass
74.
Sputtering Target and Method for Producing Sputtering Target
Provided is a sputtering target having a molybdenum content of 99.99% by mass or more, a relative density of 98% or more, and an average crystal grain diameter of 400 μm or less.
Provided is a method for processing electronic/electrical device component waste, which can increase an amount of electronic/electrical device component waste processed in a smelting step and efficiently recover valuable metals. The method for processing electronic/electrical device component waste includes a step of processing the electronic/electrical device component waste in a smelting step, wherein prior to the smelting step, the method includes a step for reducing smelting inhibitors contained in the electronic/electrical device component waste
Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSix with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μm2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.
Provided is a method for processing electronic and electrical device component scrap, which can increase an amount of electronic and electrical device component scrap processed in a smelting step and efficiently recover valuable metals. The method for processing electronic and electrical device component scrap includes: a step 1 of removing powdery materials and film-shaped component scrap from the electronic and electrical device component scrap; a step 2 of concentrating synthetic resins and substrates from the electronic and electrical device component scrap from which the powdery materials and film-shaped component scrap have been removed; and a step 3 of concentrating the substrates containing valuable metals from a concentrate obtained in the step 2.
Provided is a radiation detection element, including: a plurality of electrode portions on a surface of a substrate; and an insulating portion between the electrode portions, the substrate being made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein the tellurium oxide layer has a thickness of 100 nm or less on a 500 nm inner side from an end portion of the insulating portion between the electrode portions. The radiation detection element has higher adhesion of the electrodes, and does not result in an element performance defect caused by insufficient insulation between the electrodes, even if the radiation detection element has a narrower distance between the electrode portions in order to obtain a high-definition radiographic image.
Provided is a radiation detecting element that has high adhesion between electrode portions and a substrate and does not suffer from performance failures due to insufficient insulation between the electrode portions, even if a distance between the electrode portions is narrower in order to obtain a high-definition radiation drawn image. The radiation detecting element includes: a plurality of electrode portions; and an insulating portion provided between the electrode portions on a surface of a substrate made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein tellurium oxide is present on an upper portion of the insulating portion, and the tellurium oxide on the upper portion of the insulating portion has a maximum thickness of 30 nm or less.
H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
G01T 1/24 - Measuring radiation intensity with semiconductor detectors
G01T 7/00 - MEASUREMENT OF NUCLEAR OR X-RADIATION - Details of radiation-measuring instruments
81.
Sputtering Target And Method For Preparing Thereof
[Problem to be solved] To provide an IGZO sputtering target occurring less arcing
[Problem to be solved] To provide an IGZO sputtering target occurring less arcing
[Means for solving the problem] An IGZO sputtering target comprising In, Ga, Zn, and O,
wherein atom ratios for In, Ga, and Zn are:
0.30≤In/(In+Ga+Zn)≤0.36,
0.30≤Ga/(In+Ga+Zn)≤0.36 and
0.30≤Zn/(In+Ga+Zn)≤0.36,
wherein a relative density is at least 96%,
wherein average crystal grain size in surface of the sputtering target is 30.0 μm or less, and
wherein difference of the grain size in surface of the sputtering target is 20% or less (1.0≤Dmax/Dmin≤1.2).
2 as non-magnetic materials, wherein Si and O are present in a region where B or N is present at a cut surface of the sintered compact. A high density sputtering target is provided which enables production of a magnetic thin film for heat-assisted magnetic recording media, and also reduces the amount of particles generated during sputtering.
G11B 5/65 - Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
G11B 5/851 - Coating a support with a magnetic layer by sputtering
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
C22C 33/02 - Making ferrous alloys by powder metallurgy
H01F 41/18 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
C22C 5/04 - Alloys based on a platinum group metal
H01F 1/33 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metallic particles having oxide skin
H01F 10/12 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
C22C 1/05 - Mixtures of metal powder with non-metallic powder
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
83.
Semiconductor substrate and manufacturing method therefor
A semiconductor substrate has, on an Au electrode pad, an electrolessly-plated Ni film/an electrolessly-plated Pd film/an electrolessly-plated Au film or an electrolessly-plated Ni film/an electrolessly-plated Au film and a method of manufacturing the semiconductor substrate by the steps indicated in (1) to (6) below: (1) a degreasing step; (2) an etching step; (3) a pre-dipping step; (4) a Pd catalyst application step; (5) an electroless Ni plating step; (6) an electroless Pd plating step and electroless Au plating step or an electroless Au plating step.
A semiconductor wafer suppressed in voids produced in the interface between a passivation film and an electroless nickel plating film, and configured such that an electrode pad is entirely covered by the electroless nickel plating film. The semiconductor wafer includes, on a substrate, an electrode pad and a passivation film covering the upper surface of the substrate and an opening from which the electrode pad is exposed. The semiconductor wafer sequentially includes, on the electrode pad, an electroless nickel plating film, an electroless palladium plating film and an electroless gold plating film. A void, present in the interface between the passivation film and the electroless nickel plating film, has a length from the forefront of the void to the surface of the electrode pad of 0.3 μm or more and a width of 0.2 μm or less. The electrode pad is entirely covered by the electroless nickel plating film.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C23C 18/44 - Coating with noble metals using reducing agents
A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.
H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
B32B 3/00 - Layered products essentially comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products essentially having particular features of form
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 15/085 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyolefins
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
B32B 15/095 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyurethanes
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.
C04B 35/457 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 μm or more and 700 μm or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.
Method for dissolving lithium compound, method for manufacturing lithium carbonate, and method for recovering lithium from lithium ion secondary cell scrap
A method for dissolving a lithium compound according to the present invention includes bringing a lithium compound into contact with water or an acidic solution, and feeding, separately from the lithium compound, a carbonate ion to the water or the acidic solution to produce carbonic acid, and allowing the carbonic acid to react with the lithium compound to produce lithium hydrogen carbonate.
A surface-treated plated material is provided. The surface-treated plated material can suppress generation of whiskers, maintain good solderability and low contact resistance even when exposed to an elevated temperature environment, and have lower insertion force for terminals/connectors. The surface-treated plated material comprises a substrate provided with an upper layer, and the upper layer comprises a plated material containing Sn or In. A surface of the plated material contains at least one compound represented by a certain general formula and at least one compound represented by a certain general formula. One or more compounds selected from a group D of constituent compounds represented by certain general formulae are further applied onto a surface on the upper layer side.
A sodium removal method according to the present invention is a method for removing sodium from a sodium-containing solution by precipitating a sodium ion in the sodium-containing solution as a sodium salt, the method including: a sodium precipitating step of precipitating the sodium salt by decreasing a temperature of the sodium-containing solution so that a sodium concentration of the sodium-containing solution exceeds solubility of the sodium salt at said temperature; and a solid-liquid separation step of removing the precipitated sodium salt by solid-liquid separation.
The present disclosure provides a sputtering target containing one or more metals of Fe, Co, Cr, and Pt, and one or more of C and BN, with less generation of particles, and a method for producing the same. A sputtering target including: one or more metallic phases selected from a group consisting of Fe, Co, Cr, and Pt; and one or more nonmetallic phases selected from a group consisting of C and BN, wherein the sputtering target satisfies: A≤40, and A/B≤1.7 in which A represents the number of boundaries between the metallic phases and the nonmetallic phases on a line segment having a length of 500 μm drawn in a vertical direction, in a structure photograph; and B represents the number of boundaries between the metallic phases and the nonmetallic phases on a line segment having a length of 500 μm drawn in a horizontal direction, in the structure photograph.
B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
C22C 29/16 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on nitrides
There is provided a BN-containing ferromagnetic material sputtering target which is capable of suppressing generation of particles during sputtering. A sputtering target containing from 1 to 40 at. % of B and from 1 to 30 at. % of N and comprising a structure including at least one ferromagnetic metal-containing metal phase and at least one nonmagnetic material phase, wherein an X-ray diffraction profile obtained by analyzing the structure with an X-ray diffraction method exhibits a diffraction peak derived from cubic boron nitride.
A metal powder in which a coating made of one or more types of elements selected from Gd, Ho, Lu, Mo, Nb, Os, Re, Ru, Tb, Tc, Th, Tm, U, V, W, Y, Zr, Cr, Rh, Hf, La, Ce, Pr, Nd, Pm, Sm and Ti is formed on a surface of a copper or copper alloy powder, wherein a thickness of the coating is 5 nm or more and 500 nm or less. A metal powder for metal additive manufacturing based on the laser method which can be efficiently melted with a laser while maintaining the high conductivity of copper or copper alloy, and a molded object produced by using such metal powder are provided.
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B33Y 70/00 - Materials specially adapted for additive manufacturing
C23C 14/16 - Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
(2) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of orientation area ratios of a {100} plane oriented at a misorientation of within 15° relative to a normal direction of the sputtering surface is 20% or more.
The present invention provides a method for treating at least one lithium ion battery enclosed in a housing containing aluminum, comprising heating the lithium ion battery using a combustion furnace in which a combustion object is incinerated by flames, while preventing the flames from being directly applied to the housing of the lithium ion battery.
An object of the present invention is to provide a copper alloy powder for lamination shaping comprising a copper alloy, a method for producing a lamination shaped product and a lamination shaped product, which can achieve coexistence of mechanical strength and conductivity. One aspect of the present invention relates to a copper alloy powder for lamination shaping, comprising at least one additive element having a solid solution amount to copper of less than 0.2 at %.
A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 ≤Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.
H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
H01F 10/14 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
H01F 41/14 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
100.
Tungsten silicide target and method of manufacturing same
C04B 35/58 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides