Abstract

A method for selectively etching a metal component of a workpiece comprises: forming a hard mask over the metal component; and etching the metal component using an etchant solution, whereby the hard mask controls the etching; wherein the etchant solution is a basic etchant solution; and wherein the workpiece includes a semiconductor component comprising a material of Formula 1: A method for selectively etching a metal component of a workpiece comprises: forming a hard mask over the metal component; and etching the metal component using an etchant solution, whereby the hard mask controls the etching; wherein the etchant solution is a basic etchant solution; and wherein the workpiece includes a semiconductor component comprising a material of Formula 1: InAsxSb1-x A method for selectively etching a metal component of a workpiece comprises: forming a hard mask over the metal component; and etching the metal component using an etchant solution, whereby the hard mask controls the etching; wherein the etchant solution is a basic etchant solution; and wherein the workpiece includes a semiconductor component comprising a material of Formula 1: InAsxSb1-x wherein x is in the range 0 to 1. It has surprisingly been found that basic etchants do not damage the semiconductor material. Another aspect provides the use of a basic etchant to etch aluminium selectively in the presence of a semiconductor comprising a material of Formula 1, where x is in the range 0 to 0.25.

IPC Classes  ?

• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers