Semiconductor Energy Laboratory Co., Ltd.

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IPC Class
H01L 29/786 - Thin-film transistors 2,742
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body 2,390
H01L 29/66 - Types of semiconductor device 1,108
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes 894
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof 792
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1.

LIGHT ADJUSTMENT PROGRAM, LIGHT-EMITTING APPARATUS, AND LIGHTING DEVICE

      
Application Number 18289069
Status Pending
Filing Date 2022-05-11
First Publication Date 2024-07-18
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Shingu, Takashi
  • Suzuki, Tsunenori
  • Seo, Satoshi
  • Katagiri, Haruki
  • Inoue, Noboru
  • Fujita, Kazuhiko
  • Sasaki, Toshiki
  • Yoshizumi, Hideko

Abstract

Provided is a novel light adjustment program that can make a human feel at ease. Provided is the light adjustment program that includes the steps of obtaining basic data having 1/f fluctuation characteristics; generating first smoothed data and second smoothed data by performing moving average processing with different periods on the basic data having 1/f fluctuation characteristics; generating light adjustment data by subjecting the first smoothed data and the second smoothed data to arithmetic processing; and changing luminance of a light-emitting device in time series in accordance with the light adjustment data.

IPC Classes  ?

  • H05B 47/165 - Controlling the light source following a pre-assigned programmed sequence; Logic control [LC]
  • F21V 1/14 - Covers for frames; Frameless shades
  • F21Y 115/15 - Organic light-emitting diodes [OLED]

2.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

      
Application Number 18522543
Status Pending
Filing Date 2023-11-29
First Publication Date 2024-07-18
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Koyama, Jun
  • Miyake, Hiroyuki
  • Takahashi, Kei
  • Toyotaka, Kouhei
  • Tsubuku, Masashi
  • Noda, Kosei
  • Kuwabara, Hideaki

Abstract

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor, With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
  • H01L 21/8236 - Combination of enhancement and depletion transistors
  • H01L 23/66 - High-frequency adaptations
  • H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , ,  or
  • H01L 29/26 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , ,
  • H01L 29/66 - Types of semiconductor device
  • G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
  • G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • H02M 3/07 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode

3.

DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE

      
Application Number 18558233
Status Pending
Filing Date 2022-04-26
First Publication Date 2024-07-18
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Eguchi, Shingo
  • Okazaki, Kenichi
  • Shima, Yukinori

Abstract

A display device with high resolution is provided. The display device includes a light-emitting element including a first electrode, an organic compound layer, and a second electrode; a first transistor electrically connected to the first electrode; a second transistor electrically connected to a gate of the first transistor; and an insulator provided to cover an end portion of the first electrode. The first transistor contains silicon in a channel formation region. The second transistor includes an oxide semiconductor in a channel formation region. An end portion of the organic compound layer is positioned in the opening portion of the insulator.

IPC Classes  ?

  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/122 - Pixel-defining structures or layers, e.g. banks
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

4.

Method For Manufacturing Display Device, Display Device, Display Module, and Electronic Device

      
Application Number 18390937
Status Pending
Filing Date 2023-12-20
First Publication Date 2024-07-18
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Nakazawa, Yasutaka
  • Goto, Naoto
  • Okazaki, Kenichi
  • Ohide, Takayuki

Abstract

A method for manufacturing a novel display device that is highly convenient, useful, or reliable is to be provided. A first film is formed over a first electrode and a second electrode in a second step in the manufacturing method; a second film is formed over the first film in a third step; a third film is formed over the second film by a CVD method in a fourth step; part of the third film located above the second electrode is removed by an etching method to form a first layer overlapping with the first electrode in a fifth step; and part of the second film and part of the first film each located above the second electrode are removed by an etching method using the first layer to form a second layer and a first unit each overlapping with the first electrode in a sixth step.

IPC Classes  ?

5.

POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE

      
Application Number 18442470
Status Pending
Filing Date 2024-02-15
First Publication Date 2024-07-18
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Takahashi, Masahiro
  • Ochiai, Teruaki
  • Momma, Yohei
  • Tsuruta, Ayae

Abstract

A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

IPC Classes  ?

  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
  • H01M 4/02 - Electrodes composed of, or comprising, active material

6.

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

      
Application Number 18278451
Status Pending
Filing Date 2022-02-24
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kurokawa, Yoshiyuki
  • Godo, Hiromichi
  • Tsuda, Kazuki
  • Ohshita, Satoru
  • Rikimaru, Hidefumi

Abstract

A semiconductor device with a novel structure is provided. The semiconductor device includes a cell array performing a product-sum operation of a first layer and a product-sum operation of a second layer in an artificial neural network, a first circuit from which first data is input to the cell array, and a second circuit to which second data is output from the cell array. The cell array includes a plurality of cells. The cell array includes a first region and a second region. In a first period, the first region is supplied with the t-th (t is a natural number greater than or equal to 2) first data from the first circuit and outputs the t-th second data according to the product-sum operation of the first layer to the second circuit. In the first period, the second region is supplied with the (t+1)-th first data from the first circuit and outputs the (t+1)-th second data according to the product-sum operation of the second layer to the first circuit.

IPC Classes  ?

  • G06F 7/523 - Multiplying only
  • G06F 7/50 - Adding; Subtracting
  • G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
  • G11C 11/405 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
  • H10B 12/00 - Dynamic random access memory [DRAM] devices
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

7.

Display Apparatus and Method For Manufacturing Display Apparatus

      
Application Number 18290224
Status Pending
Filing Date 2022-04-29
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kubota, Daisuke
  • Okazaki, Kenichi
  • Hatsumi, Ryo
  • Kusunoki, Koji

Abstract

A display apparatus having an image capturing function is provided. A display apparatus or an image capturing device with a high aperture ratio is provided. The display apparatus includes a first light-emitting element and a light-receiving element. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode. The light-receiving element includes a second pixel electrode, a second organic layer, and the common electrode. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. A first layer and a second layer are included in a region between the first light-emitting element and the light-receiving element. The first layer overlaps with the second organic layer and the second pixel electrode and contains a material identical to a material of the first organic layer. The second layer overlaps with the first organic layer and the first pixel electrode and contains a material identical to a material of the second organic layer. In the region between the first light-emitting element and the light-receiving element, an end portion of the first organic layer and an end portion of the first layer face each other and an end portion of the second organic layer and an end portion of the second layer face each other.

IPC Classes  ?

  • H10K 59/122 - Pixel-defining structures or layers, e.g. banks
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 59/82 - Interconnections, e.g. terminals
  • H10K 77/10 - Substrates, e.g. flexible substrates

8.

Semiconductor Device, Driver Circuit, And Display Device

      
Application Number 18404426
Status Pending
Filing Date 2024-01-04
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Miyake, Hiroyuki
  • Toyotaka, Kouhei
  • Yamazaki, Shunpei

Abstract

To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

IPC Classes  ?

  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/1343 - Electrodes
  • G02F 1/1345 - Conductors connecting electrodes to cell terminals
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

9.

SEMICONDUCTOR DEVICE

      
Application Number 18538009
Status Pending
Filing Date 2023-12-13
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor Yamazaki, Shunpei

Abstract

Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.

IPC Classes  ?

  • H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
  • G11C 11/405 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
  • G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
  • H01L 21/8258 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/786 - Thin-film transistors
  • H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
  • H10B 41/20 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
  • H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
  • H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
  • H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

10.

ORGANIC COMPOUND, LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, AND ELECTRONIC DEVICE

      
Application Number 18539974
Status Pending
Filing Date 2023-12-14
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Takabatake, Masatoshi
  • Kawakami, Sachiko
  • Ohsawa, Nobuharu
  • Yoshiyasu, Yui
  • Watabe, Takeyoshi

Abstract

An electron-injection organic compound with low solubility in water is provided. An organic compound represented by General Formula (G1) is provided. X represents a group represented by General Formula (X-1) and Y represents a group represented by General Formula (Y-1). Ar represents a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a ring or an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a ring. Each of R1 and R2 independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms, and h represents an integer of 1 to 6. In General Formulae (X-1) and (Y-1), each of R3 to R6 independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms, and m represents an integer of 0 to 4. When m is 0, 1, 3, or 4, n represents an integer of 1 to 5. When m is 2, n represents 1, 2, 4, or 5. An electron-injection organic compound with low solubility in water is provided. An organic compound represented by General Formula (G1) is provided. X represents a group represented by General Formula (X-1) and Y represents a group represented by General Formula (Y-1). Ar represents a heteroaromatic hydrocarbon group having 2 to 30 carbon atoms forming a ring or an aromatic hydrocarbon group having 6 to 30 carbon atoms forming a ring. Each of R1 and R2 independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms, and h represents an integer of 1 to 6. In General Formulae (X-1) and (Y-1), each of R3 to R6 independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms, and m represents an integer of 0 to 4. When m is 0, 1, 3, or 4, n represents an integer of 1 to 5. When m is 2, n represents 1, 2, 4, or 5.

IPC Classes  ?

  • H10K 85/60 - Organic compounds having low molecular weight
  • C07D 487/04 - Ortho-condensed systems
  • C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials

11.

DISPLAY APPARATUS, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS

      
Application Number 18548186
Status Pending
Filing Date 2022-02-24
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Hodo, Ryota
  • Sasagawa, Shinya
  • Hiura, Yoshikazu
  • Fujie, Takahiro

Abstract

A high-definition and high-resolution display apparatus is provided. A conductive film, a first layer, and a first sacrificial layer are formed. The first layer and the first sacrificial layer are processed to expose part of the conductive film. A second layer and a second sacrificial layer are formed over the first sacrificial layer and the conductive film. The second layer and the second sacrificial layer are processed to expose part of the conductive film. The conductive film is processed to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer. Two insulating films covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, a side surface of the second layer, a side surface and a top surface of the first sacrificial layer, and a side surface and atop surface of the second sacrificial layer are formed. The two insulating films are processed to form a sidewall covering at least the side surface of the first pixel electrode and the side surface of the first layer. The first sacrificial layer and the second sacrificial layer are removed. A common electrode is formed over the first layer and the second layer.

IPC Classes  ?

  • H10K 59/122 - Pixel-defining structures or layers, e.g. banks
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

12.

METHOD FOR FORMING POSITIVE ELECTRODE ACTIVE MATERIAL, POSITIVE ELECTRODE, LITHIUM-ION SECONDARY BATTERY, MOVING VEHICLE, POWER STORAGE DEVICE, AND ELECTRONIC DEVICE

      
Application Number 18561360
Status Pending
Filing Date 2022-05-09
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Saito, Jo
  • Momma, Yohei
  • Mikami, Mayumi
  • Ochiai, Teruaki

Abstract

A method for forming a positive electrode active material that is stable in a high potential state and/or a high temperature state is provided. The method for forming a positive electrode active material includes a step of mixing a composite oxide containing lithium and cobalt with a barium source, a magnesium source, and a fluorine source to fabricate a first mixture containing barium fluoride, magnesium fluoride, and lithium fluoride; a step of heating the first mixture at a temperature higher than or equal to 800° C. and lower than or equal to 1100° C. for longer than or equal to 2 hours; a step of mixing the first mixture with a nickel source and an aluminum source to fabricate a second mixture; and a step of heating the second mixture at a temperature higher than or equal to 800° C. and lower than or equal to 1100° C. for longer than or equal to 2 hours. When a molar ratio of magnesium fluoride to barium fluoride contained in the first mixture is MgF2:BaF2=y:1, y satisfies greater than or equal to 0.5 and less than or equal to 10.

IPC Classes  ?

  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
  • C01G 51/00 - Compounds of cobalt
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries

13.

DISPLAY DEVICE

      
Application Number 18614822
Status Pending
Filing Date 2024-03-25
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Yoshizumi, Kensuke

Abstract

One embodiment of the present invention provides a highly reliable display device. In particular, a display device to which a signal or a power supply potential can be supplied stably is provided. Further, a bendable display device to which a signal or a power supply potential can be supplied stably is provided. The display device includes, over a flexible substrate, a display portion, a plurality of connection terminals to which a signal from an outside can be input, and a plurality of wirings. One of the plurality of wirings electrically connects one of the plurality of connection terminals to the display portion. The one of the plurality of wirings includes a first portion including a plurality of separate lines and a second portion in which the plurality of lines converge.

IPC Classes  ?

  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • G04G 9/00 - Visual time or date indication means
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 77/10 - Substrates, e.g. flexible substrates
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H05K 1/02 - Printed circuits - Details
  • H05K 1/14 - Structural association of two or more printed circuits
  • H05K 1/18 - Printed circuits structurally associated with non-printed electric components
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 102/00 - Constructional details relating to the organic devices covered by this subclass

14.

Semiconductor Device, Display Apparatus, and Electronic Device

      
Application Number 18288495
Status Pending
Filing Date 2022-04-20
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Tsuda, Kazuki
  • Rikimaru, Hidefumi
  • Ohshita, Satoru
  • Godo, Hiromichi
  • Kurokawa, Yoshiyuki

Abstract

A semiconductor device with reduced circuit area is provided. The semiconductor device includes first and second cell arrays and a first converter circuit. The first cell array includes a first cell and a second cell in the same row, and the second cell array includes third and fourth cells in the same row. The first cell is electrically connected to first and second wirings, the second cell is electrically connected to the first and third wirings, the third cell is electrically connected to fourth and sixth wirings, and the fourth cell is electrically connected to fifth and seventh wirings. The sixth wiring is electrically connected to the seventh wiring. The first to fourth cells each have a function of outputting current corresponding to a product of retained data and input data. Specifically, the first cell, the second cell, the third cell, and the fourth cell output current to the second wiring, the third wiring, the sixth wiring, and the seventh wiring, respectively. The first converter circuit has a function of making data corresponding to a total amount of current flowing through the second and third wirings flow to the fourth and fifth wirings, respectively.

IPC Classes  ?

  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals

15.

DISPLAY APPARATUS, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS

      
Application Number 18277791
Status Pending
Filing Date 2022-02-09
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Okazaki, Kenichi
  • Nakamura, Daiki
  • Sato, Rai

Abstract

A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a second insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. Each of an end portion of the first pixel electrode and an end portion of the second pixel electrode is covered with the first insulating layer. The second insulating layer is positioned over the first insulating layer. The second insulating layer covers each of a side surface of the first light-emitting layer and a side surface of the second light-emitting layer.

IPC Classes  ?

  • H10K 59/38 - Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 71/60 - Forming conductive regions or layers, e.g. electrodes

16.

ELECTRONIC DEVICE

      
Application Number 18278199
Status Pending
Filing Date 2022-02-24
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Godo, Hiromichi
  • Kurokawa, Yoshiyuki
  • Toyotaka, Kouhei
  • Tsuda, Kazuki
  • Ohshita, Satoru
  • Rikimaru, Hidefumi

Abstract

An electronic device having an eye tracking function is provided. The electronic device includes a display device and an optical system. The display device includes a first light-emitting element, a second light-emitting element, a sensor portion, and a driver circuit portion. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light or visible light. The second light-emitting element has a function of emitting light of a color different from that of light emitted from the first light-emitting element. When the first light-emitting element emits infrared light, the light-receiving element has a function of detecting the infrared light that is emitted from the first light-emitting element and reflected by an eyeball of a user. When the first light-emitting element emits visible light, the light-receiving element has a function of detecting the visible light that is emitted from the first light-emitting element and reflected by the eyeball of the user. The first light-emitting element and the second light-emitting element are placed in one layer. The layer where the first light-emitting element and the second light-emitting element are positioned overlaps with the sensor portion.

IPC Classes  ?

  • H10K 39/34 - Organic image sensors integrated with organic light-emitting diodes [OLED]
  • G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
  • G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
  • H10K 59/65 - OLEDs integrated with inorganic image sensors

17.

LIGHT-EMITTING DEVICE, DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18541411
Status Pending
Filing Date 2023-12-15
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Yoshizumi, Hideko
  • Ohsawa, Nobuharu
  • Seo, Hiromi
  • Sasaki, Toshiki

Abstract

A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a first electrode, a second electrode, a first unit, and a first layer. The first unit is positioned between the first electrode and the second electrode and contains a first light-emitting material. The first layer is positioned between the second electrode and the first unit and contains a first organic compound and a second organic compound. The first organic compound has an acid dissociation constant pKa larger than or equal to 8, and the second organic compound has no pyridine ring, no phenanthroline ring, or one phenanthroline ring.

IPC Classes  ?

  • H10K 85/60 - Organic compounds having low molecular weight
  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • H10K 50/17 - Carrier injection layers
  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 85/30 - Coordination compounds

18.

DISPLAY DEVICE AND ELECTRONIC DEVICE

      
Application Number 18582949
Status Pending
Filing Date 2024-02-21
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kimura, Hajime
  • Akimoto, Kengo
  • Tsubuku, Masashi
  • Sasaki, Toshinari

Abstract

A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

19.

FUNCTIONAL PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE

      
Application Number 18612151
Status Pending
Filing Date 2024-03-21
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kubota, Daisuke
  • Kawashima, Susumu
  • Kusunoki, Koji

Abstract

A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first driver circuit, a second driver circuit, and a pixel set, the first driver circuit has a function of supplying a first selection signal and a second selection signal, a second driver circuit has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level. The pixel set includes a first pixel, and the first pixel includes a first element and a first pixel circuit. The first pixel circuit has functions of obtaining the image signal on the basis of the first selection signal, obtaining the control signal on the basis of the second selection signal, and holding a first state to a third state. The first element is electrically connected to the first pixel circuit, performs display with first brightness on the basis of the first state, performs display with second brightness on the basis of the second state, and performs display using the image signal on the basis of the third state. The first brightness is darker than the second brightness.

IPC Classes  ?

  • G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means

20.

DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF

      
Application Number 18616403
Status Pending
Filing Date 2024-03-26
First Publication Date 2024-07-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Sakata, Junichiro
  • Sasaki, Toshinari
  • Hosoba, Miyuki

Abstract

An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

IPC Classes  ?

  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , ,  or
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/786 - Thin-film transistors

21.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18378688
Status Pending
Filing Date 2023-10-11
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Okazaki, Kenichi
  • Jintyou, Masami
  • Yoshizumi, Kensuke

Abstract

A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The first insulating layer is provided over the semiconductor layer. The first conductive layer is provided over the first insulating layer. The semiconductor layer includes a first region that overlaps with the first conductive layer and the first insulating layer, a second region that does not overlap with the first conductive layer and overlaps with the first insulating layer, and a third region that overlaps with neither the first conductive layer nor the first insulating layer. The semiconductor layer contains a metal oxide. The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium. The first element exists in a state of being bonded to oxygen.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
  • H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks

22.

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

      
Application Number 18546685
Status Pending
Filing Date 2022-02-14
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kusunoki, Koji
  • Watanabe, Kazunori
  • Atsumi, Tomoaki
  • Yoshimoto, Satoshi

Abstract

A semiconductor device having a light sensing function and including a high-resolution display portion is provided. The semiconductor device includes a plurality of pixels, and the pixels each include first and second light-receiving devices, first to fifth transistors, a capacitor, and a first wiring. One electrode of the first light-receiving device is electrically connected to the first wiring, and the other electrode is electrically connected to one of a source and a drain of the first transistor. One electrode of the second light-receiving device is electrically connected to the first wiring, and the other electrode is electrically connected to one of a source and a drain of the second transistor. The other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to one electrode of the capacitor, one of a source and a drain of the third transistor, and a gate of the fourth transistor.

IPC Classes  ?

  • H10K 39/34 - Organic image sensors integrated with organic light-emitting diodes [OLED]
  • G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
  • G06V 40/13 - Sensors therefor
  • G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals

23.

SEMICONDUCTOR DEVICE

      
Application Number 18560959
Status Pending
Filing Date 2022-05-13
First Publication Date 2024-07-11
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kurokawa, Yoshiyuki
  • Godo, Hiromichi
  • Tsuda, Kazuki
  • Toyotaka, Kouhei
  • Ohshita, Satoru
  • Rikimaru, Hidefumi
  • Uochi, Hideki

Abstract

A novel semiconductor device is provided. In reservoir computing using an input layer, a reservoir layer, and an output layer, variation in threshold voltage between transistors is used as a weight used for product arithmetic processing. Two transistors are provided in one product arithmetic circuit and data u is supplied to gates of the two transistors. Drain current of each of the transistors is determined by the data u and the threshold voltage of the transistor. The difference between the drain currents corresponds to a product arithmetic result. The difference between the drain currents is converted into voltage to be output. A plurality of product arithmetic circuits are connected in parallel to form a product-sum arithmetic circuit.

IPC Classes  ?

  • H01L 23/528 - Layout of the interconnection structure
  • H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , ,  or

24.

LIGHT-EMITTING DEVICE

      
Application Number 18396007
Status Pending
Filing Date 2023-12-26
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Seo, Hiromi
  • Ohsawa, Nobuharu

Abstract

A highly reliable and efficient light-emitting device is provided. The light-emitting device includes an organic compound layer between a first electrode and a second electrode. The organic compound layer includes a first EL layer, a second EL layer, and an intermediate layer. The intermediate layer is between the first EL layer and the second EL layer. The intermediate layer includes a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity with an acid dissociation constant pKa greater than or equal to 8. The second organic compound has an electron-transport property. The LUMO level of the first organic compound is higher than the LUMO level of the second organic compound. The HOMO level of the first organic compound is higher than the HOMO level of the second organic compound.

IPC Classes  ?

25.

MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

      
Application Number 18409150
Status Pending
Filing Date 2024-01-10
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yakubo, Yuto
  • Ishizu, Takahiko

Abstract

A memory device with shortened access time in data reading is provided. The memory device includes a first layer and a second layer positioned above the first layer, the first layer includes a reading circuit, and the second layer includes a first memory cell and a second memory cell. The reading circuit includes a Si transistor. The first memory cell and the second memory cell each include an OS transistor. The first memory cell is electrically connected to the reading circuit, and the second memory cell is electrically connected to the reading circuit. When a first current corresponding to first data retained in the first memory cell flows from the reading circuit to the first memory cell and a second current corresponding to second data retained in the second memory cell flows from the reading circuit to the second memory cell, the reading circuit compares the current amounts of the first current and the second current, and reads the first data.

IPC Classes  ?

  • G11C 11/405 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
  • G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/786 - Thin-film transistors
  • H10B 12/00 - Dynamic random access memory [DRAM] devices

26.

Light-Emitting Device

      
Application Number 18436886
Status Pending
Filing Date 2024-02-08
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Ueda, Airi
  • Ohsawa, Nobuharu
  • Seo, Satoshi

Abstract

A light-emitting device is provided. The light-emitting device includes an intermediate layer, a first light-emitting unit, and a second light-emitting unit. The intermediate layer includes a region interposed between the first light-emitting unit and the second light-emitting unit. The intermediate layer has a function of supplying an electron to one of the first light-emitting unit and the second light-emitting unit and supplying a hole to the other. The first light-emitting unit includes a first light-emitting layer, the first light-emitting layer includes a first light-emitting material, the second light-emitting unit includes a second light-emitting layer, the second light-emitting layer includes a second light-emitting material, the second light-emitting layer has a first distance from the first light-emitting layer, and the first distance is longer than or equal to 5 nm and shorter than or equal to 65 nm.

IPC Classes  ?

  • H10K 50/19 - Tandem OLEDs
  • G06V 40/13 - Sensors therefor
  • H10K 50/818 - Reflective anodes, e.g. ITO combined with thick metallic layers
  • H10K 50/828 - Transparent cathodes, e.g. comprising thin metal layers
  • H10K 50/852 - Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
  • H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K 85/30 - Coordination compounds
  • H10K 102/00 - Constructional details relating to the organic devices covered by this subclass

27.

DISPLAY APPARATUS, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD FOR FABRICATING DISPLAY APPARATUS

      
Application Number 18555903
Status Pending
Filing Date 2022-04-12
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Jinbo, Yasuhiro
  • Ohno, Toshikazu
  • Numata, Shiyuu

Abstract

A highly reliable display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and an inorganic insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. The inorganic insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. The hydrogen concentration and the carbon concentration in the inorganic insulating layer are each preferably sufficiently low.

IPC Classes  ?

28.

DISPLAY APPARATUS

      
Application Number 18557142
Status Pending
Filing Date 2022-04-15
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Nakamura, Daiki
  • Okazaki, Kenichi
  • Sato, Rai

Abstract

A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting element, a second light-emitting element, a first color filter, and a second color filter; the first light-emitting element and the second light-emitting element each have the capability to emit white light; the first color filter and the second color filter have the capability to transmit light of the respective colors in light emitted from the light-emitting elements; the first light-emitting element includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer; the second light-emitting element includes a second pixel electrode over an insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer; the first light-emitting element includes a region where an angle between the side surface of the first pixel electrode and the bottom surface of the first pixel electrode is greater than or equal to 60° and less than or equal to 140°; and the ratio (T1/T2) of a thickness T1 of the first pixel electrode to a thickness T2 of the first EL layer is greater than or equal to 0.5.

IPC Classes  ?

  • H10K 59/38 - Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

29.

ELECTRONIC DEVICE

      
Application Number 18558060
Status Pending
Filing Date 2022-04-28
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Miyairi, Hidekazu
  • Kato, Sho

Abstract

An electronic device with high luminance is provided. The electronic device includes a first display apparatus, a second display apparatus, and an optical element. The first display apparatus includes a first light-emitting element and the second display apparatus includes a second light-emitting element. A color of first light emitted from the first light-emitting element is different from a color of second light emitted from the second light-emitting element. An optical element is provided between the first display apparatus and the second display apparatus. The optical element includes a first light guide plate and a second light guide plate.

IPC Classes  ?

  • G02B 27/01 - Head-up displays
  • H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
  • H10K 59/90 - Assemblies of multiple devices comprising at least one organic light-emitting element
  • H10K 59/95 - Assemblies of multiple devices comprising at least one organic light-emitting element comprising only organic light-emitting elements

30.

Display Apparatus

      
Application Number 18563066
Status Pending
Filing Date 2022-05-17
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kubota, Daisuke
  • Okazaki, Kenichi
  • Kusunoki, Koji

Abstract

A display apparatus having an image capturing function is provided. A display apparatus or an image capturing with a high aperture ratio is provided. The display apparatus includes a light-emitting element and a light-receiving element. A first pixel electrode, a first organic layer, and a common electrode are stacked in this order in the light-emitting element. A second pixel electrode, a second organic layer, and the common electrode are stacked in this order in the light-receiving element. The second organic layer includes a photoelectric conversion layer. A first layer and a second layer are included in a region between the first light-emitting element and the light-receiving element. The first layer overlaps with the second organic layer and contains a material the same as a material of the first organic layer. The second layer overlaps with the first organic layer and contains a material the same as a material of the second organic layer. An end portion of the first organic layer and an end portion of the first layer face each other in the region between the light-emitting element and the light-receiving element. An end portion of the second organic layer and an end portion of the second layer face each other in the region between the light-emitting element and the light-receiving element.

IPC Classes  ?

  • H10K 59/65 - OLEDs integrated with inorganic image sensors
  • H10K 50/19 - Tandem OLEDs
  • H10K 59/38 - Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

31.

Display Apparatus

      
Application Number 18569342
Status Pending
Filing Date 2022-06-03
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yanagisawa, Yuichi
  • Okazaki, Kenichi
  • Hamada, Takashi
  • Sasagawa, Shinya

Abstract

A display apparatus with high resolution is provided. A display apparatus which can achieve high color reproducibility is provided. A display apparatus with high luminance is provided. A highly reliable display apparatus is provided. The display apparatus includes a first insulating layer, a first conductive layer provided in an opening of the first insulating layer, a first EL layer over the first conductive layer and the first insulating layer, a second insulating layer in contact with a side surface of the first EL layer and a top surface of the first insulating layer, and a second conductive layer over the first EL layer and the second insulating layer.

IPC Classes  ?

  • H10K 59/122 - Pixel-defining structures or layers, e.g. banks

32.

DISPLAY APPARATUS AND ELECTRONIC DEVICE

      
Application Number 18288083
Status Pending
Filing Date 2022-04-22
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Seo, Satoshi
  • Ohsawa, Nobuharu

Abstract

Provided is a novel display apparatus that is highly convenient, useful, or reliable. The display apparatus includes a blue-light-emitting device and a green-light-emitting device. The blue-light-emitting device includes a first unit, a second unit, and a first intermediate layer; and the first unit and the second unit each emit blue light. The first intermediate layer is interposed between the first unit and the second unit and supplies electrons to one of them and holes to the other; the second unit includes a first layer containing a first light-emitting material; and the first layer has its central plane a first distance away from a first reflective film. The green-light-emitting device includes a third unit, a fourth unit, and a second intermediate layer; and the third unit and the fourth unit each emit green light. The second intermediate layer is interposed between the third unit and the fourth unit and supplies electrons to one of them and holes to the other; the fourth unit includes a second layer containing a second light-emitting material; the second layer has its central plane a second distance away from a second reflective film; and the second distance is shorter than the first distance.

IPC Classes  ?

33.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

      
Application Number 18533358
Status Pending
Filing Date 2023-12-08
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor Yamazaki, Shunpei

Abstract

A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/66 - Types of semiconductor device
  • H10B 12/00 - Dynamic random access memory [DRAM] devices

34.

ELECTRONIC DEVICE

      
Application Number 18558214
Status Pending
Filing Date 2022-04-25
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Ikeda, Hisao
  • Tsukamoto, Yosuke
  • Yoshizumi, Kensuke
  • Kusumoto, Naoto

Abstract

An electronic device capable of detecting a user's body movements is to be provided. The electronic device is display equipment worn in front of the user's eye and capable of detecting the blinking action. The electronic device includes a display apparatus and a light source in a housing, and the display apparatus includes a light-emitting device and a light-receiving device in a display portion. Light emitted by the light source is incident on the user's eye and the vicinity thereof through a mirror and reflected, and the reflected light is detected by the light-receiving device. The amount of light reflected by the eyelid and that by the eyeball are different from each other, which enables the blinking action to be detected. The detection of the blinking action enables the user's fatigue state to be estimated.

IPC Classes  ?

  • G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
  • G02B 27/01 - Head-up displays
  • G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer

35.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18600901
Status Pending
Filing Date 2024-03-11
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Koezuka, Junichi
  • Sasaki, Toshinari
  • Tochibayashi, Katsuaki
  • Yamazaki, Shunpei

Abstract

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • G02F 1/133 - Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/1339 - Gaskets; Spacers; Sealing of cells
  • G02F 1/1343 - Electrodes
  • G02F 1/1362 - Active matrix addressed cells
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 27/146 - Imager structures
  • H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
  • H01L 29/66 - Types of semiconductor device
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/124 - Insulating layers formed between TFT elements and OLED elements

36.

SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF

      
Application Number 18604655
Status Pending
Filing Date 2024-03-14
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Oguni, Teppei
  • Uchida, Aya
  • Kadoma, Hiroshi

Abstract

Provided is a layer for preventing a short circuit between a positive electrode and a negative electrode in a solid battery using a layer containing a solid electrolyte. As the solid electrolyte between the positive electrode and the negative electrode, a layer containing a graphene compound is used. Lithium ions can pass through the layer containing the graphene compound. Lithium ions are added in advance in the layer containing the graphene compound. Specifically, a modifier is used, and a graphene compound chemically modified with a functional group such as ether and ester with an increased interlayer distance is used.

IPC Classes  ?

  • H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 10/0562 - Solid materials
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 50/431 - Inorganic material

37.

SEMICONDUCTOR DEVICE

      
Application Number 18604713
Status Pending
Filing Date 2024-03-14
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor Kimura, Hajime

Abstract

A semiconductor device includes a semiconductor layer over a substrate; a gate insulating film covering the semiconductor layer; a gate wiring including a gate electrode, which is provided over the gate insulating film and is formed by stacking a first conductive layer and a second conductive layer; an insulating film covering the semiconductor layer and the gate wiring including the gate electrode; and a source wiring including a source electrode, which is provided over the insulating film, is electrically connected to the semiconductor layer, and is formed by stacking a third conductive layer and a fourth conductive layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. The source electrode is formed using the third conductive layer. The source wiring is formed using the third conductive layer and the fourth conductive layer.

IPC Classes  ?

  • H01L 29/49 - Metal-insulator semiconductor electrodes
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/45 - Ohmic electrodes
  • H01L 29/786 - Thin-film transistors

38.

DISPLAY DEVICE AND SEMICONDUCTOR DEVICE

      
Application Number 18604752
Status Pending
Filing Date 2024-03-14
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor Sato, Mizuki

Abstract

An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

IPC Classes  ?

  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
  • H01L 29/786 - Thin-film transistors
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/124 - Insulating layers formed between TFT elements and OLED elements
  • G02F 1/1362 - Active matrix addressed cells
  • H10B 12/00 - Dynamic random access memory [DRAM] devices
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays

39.

DISPLAY PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE

      
Application Number 18607654
Status Pending
Filing Date 2024-03-18
First Publication Date 2024-07-04
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Ikeda, Hisao
  • Nakada, Masataka
  • Aoyama, Tomoya

Abstract

A display panel is provided. The display panel includes a display region, a functional layer, a first insulating film, and a first conductive film; the display region includes a pixel; the pixel includes a display element and a pixel circuit; the display element includes a first electrode and a second electrode; the second electrode includes a first opening portion; the functional layer includes the pixel circuit, a second opening portion, and an auxiliary wiring; the pixel circuit is electrically connected to the display element in the second opening portion; the auxiliary wiring includes a region overlapping with the first opening portion; the first insulating film includes a third opening portion; the third opening portion includes a region overlapping with the first opening portion; and the first conductive film is electrically connected to the second electrode and the auxiliary wiring in the third opening portion.

IPC Classes  ?

  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • H10K 59/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

40.

IMAGING DEVICE AND ELECTRONIC DEVICE

      
Application Number 18610634
Status Pending
Filing Date 2024-03-20
First Publication Date 2024-07-04
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Takahashi, Kei
  • Kusumoto, Naoto

Abstract

An imaging device that generates, in a pixel, a potential higher than a potential to be supplied to the pixel is provided. The imaging device includes a pixel including a first circuit and a second circuit; the second circuit includes a photoelectric conversion device; the first circuit is electrically connected to the second circuit; the first circuit has a function of adding a first potential and a second potential to generate a third potential; and the second circuit has a function of generating data in the photoelectric conversion device to which the third potential is applied and has a function of outputting the data.

IPC Classes  ?

  • H01L 27/146 - Imager structures
  • H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
  • H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

41.

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18402852
Status Pending
Filing Date 2024-01-03
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Jintyou, Masami
  • Shima, Yukinori

Abstract

Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

IPC Classes  ?

  • H01L 29/66 - Types of semiconductor device
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/49 - Metal-insulator semiconductor electrodes
  • H01L 29/786 - Thin-film transistors

42.

POWER STORAGE DEVICE, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE

      
Application Number 18403793
Status Pending
Filing Date 2024-01-04
First Publication Date 2024-06-27
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kawata, Takuya
  • Takahashi, Kei

Abstract

To provide a flexible, highly reliable power storage device or light-emitting device. The device includes a battery unit or a light-emitting unit and a member with rubber elasticity. The battery unit includes a secondary battery. The light-emitting unit includes a light-emitting element. The member with rubber elasticity is provided with a first projection and a second projection. The first projection and the second projection are arranged on a first surface of the battery unit or the light-emitting unit. The first projection and the second projection come in contact with each other when the power storage device is bent such that the first surface of the battery unit faces inward.

IPC Classes  ?

  • H01G 11/78 - Cases; Housings; Encapsulations; Mountings
  • G02F 1/1333 - Constructional arrangements
  • H01G 11/82 - Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
  • H01M 50/105 - Pouches or flexible bags
  • H01M 50/211 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for pouch cells
  • H01M 50/24 - Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders characterised by physical properties of casings or racks, e.g. dimensions adapted for protecting batteries from their environment, e.g. from corrosion
  • H01M 50/579 - Devices or arrangements for the interruption of current in response to shock
  • H02J 50/12 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type

43.

ORGANIC COMPOUND AND LIGHT-EMITTING DEVICE

      
Application Number 18525103
Status Pending
Filing Date 2023-11-30
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yoshiyasu, Yui
  • Ohsawa, Nobuharu
  • Kido, Hiromitsu
  • Takabatake, Masatoshi
  • Seo, Satoshi

Abstract

A highly efficient and highly reliable light-emitting device is provided. The light-emitting device includes an organic compound layer between a pair of electrodes. The organic compound layer includes a light-emitting layer, the light-emitting layer includes a first organic compound, a second organic compound, and a light-emitting substance, the first organic compound contains deuterium, and in a PL measurement of a mixed layer of the first organic compound and the second organic compound, a spectrum of an exciplex is observed at room temperature, and a spectrum of the exciplex is not observed at a temperature in a temperature range of 4 K to 80 K, inclusive.

IPC Classes  ?

  • H10K 85/60 - Organic compounds having low molecular weight
  • C07D 209/86 - Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
  • C07F 7/08 - Compounds having one or more C—Si linkages
  • C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials
  • H10K 85/40 - Organosilicon compounds, e.g. TIPS pentacene

44.

AUTHENTICATION SYSTEM AND METHOD FOR RECORDING UNLOCKING HISTORY USING AUTHENTICATION SYSTEM

      
Application Number 18544191
Status Pending
Filing Date 2023-12-18
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yoneda, Seiichi
  • Negoro, Yusuke

Abstract

A novel authentication system is provided. In addition, a method for recording an unlocking history is provided. The authentication system includes an arithmetic device and an input/output device. The arithmetic device supplies first control data and second control data, and is supplied with a sensor signal. The input/output device includes an electric lock and a reading portion, and the electric lock is unlocked on the basis of the second control data. The reading portion is supplied with the first control data, supplies the sensor signal, and includes a light-emitting element and a pixel array. The light-emitting element emits light including infrared rays, the pixel array includes pixels, the pixels each include an imaging circuit and a photoelectric conversion element, the imaging circuit is electrically connected to the photoelectric conversion element, the imaging circuit includes a transistor, and the transistor includes an oxide semiconductor film.

IPC Classes  ?

  • G06F 21/31 - User authentication
  • G06F 16/22 - Indexing; Data structures therefor; Storage structures
  • G06V 10/143 - Sensing or illuminating at different wavelengths
  • G06V 40/12 - Fingerprints or palmprints
  • G06V 40/13 - Sensors therefor
  • G06V 40/14 - Vascular patterns
  • H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
  • H01L 27/146 - Imager structures
  • H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
  • H01L 29/786 - Thin-film transistors
  • H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

45.

DISPLAY APPARATUS

      
Application Number 18558085
Status Pending
Filing Date 2022-04-25
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Godo, Hiromichi
  • Tsuda, Kazuki
  • Rikimaru, Hidefumi
  • Kurokawa, Yoshiyuki

Abstract

A display apparatus having a novel structure is provided. A plurality of display panels, a fixing member having a curved surface, and a housing storing the fixing member are included. The display panel includes a display portion including a pixel circuit, a non-display portion provided to surround the display portion, a gate driver circuit for driving the pixel circuit, and a source driver circuit. The gate driver circuit is provided at a position overlapping with the display portion. The source driver circuit is provided at a position overlapping with the non-display portion. The plurality of display panels are fixed along the curved surface of the fixing member.

IPC Classes  ?

  • H10K 59/95 - Assemblies of multiple devices comprising at least one organic light-emitting element comprising only organic light-emitting elements
  • G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
  • H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
  • H10K 59/80 - Constructional details

46.

SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

      
Application Number 18288599
Status Pending
Filing Date 2022-04-28
First Publication Date 2024-06-27
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Hosaka, Yasuharu
  • Nakazawa, Yasutaka
  • Shiraishi, Takashi
  • Sato, Rai
  • Okazaki, Kenichi

Abstract

A miniaturized semiconductor device is provided. The semiconductor device includes a semiconductor layer over a substrate, a first conductive layer and a second conductive layer being apart from each other over the semiconductor layer, a mask layer in contact with a top surface of the first conductive layer, a first insulating layer covering the semiconductor layer, the first conductive layer, the second conductive layer, and the mask layer, and a third conductive layer overlapping with the semiconductor layer and being over the first insulating layer. The first insulating layer is in contact with a top surface and a side surface of the mask layer, a side surface of the first conductive layer, a top surface and a side surface of the second conductive layer, and a top surface of the semiconductor layer. The semiconductor device includes a region in which the distance between opposite end portions of the first conductive layer and the second conductive layer is less than or equal to 1 μm.

IPC Classes  ?

  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/45 - Ohmic electrodes
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/786 - Thin-film transistors
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

47.

DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE

      
Application Number 18289002
Status Pending
Filing Date 2022-04-26
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Ikeda, Takayuki

Abstract

A display device with a substantially high resolution is provided. The display device includes first to fourth EL layers arranged in this order to be adjacent to each other in one direction. The first and second EL layers emit light of the same color, and the third and fourth EL layers emit light of the same color. The third and fourth EL layers emit light of a color different from the color of the light emitted from the first and second EL layers. A first EL film and a second EL film are formed and divided by a photolithography method, whereby the first to fourth EL layers are formed. The first and second EL layers are formed from the first EL film, and the third and fourth EL layers are formed from the second EL film.

IPC Classes  ?

  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • H10K 59/123 - Connection of the pixel electrodes to the thin film transistors [TFT]
  • H10K 71/13 - Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
  • H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
  • H10K 71/20 - Changing the shape of the active layer in the devices, e.g. patterning
  • H10K 71/60 - Forming conductive regions or layers, e.g. electrodes

48.

LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

      
Application Number 18396801
Status Pending
Filing Date 2023-12-27
First Publication Date 2024-06-27
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Nowatari, Hiromi
  • Seo, Satoshi
  • Ohsawa, Nobuharu
  • Ushikubo, Takahiro
  • Tsutsui, Tetsuo

Abstract

An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

IPC Classes  ?

  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K 50/19 - Tandem OLEDs
  • H10K 85/20 - Carbon compounds, e.g. carbon nanotubes or fullerenes
  • H10K 85/30 - Coordination compounds
  • H10K 85/60 - Organic compounds having low molecular weight
  • H10K 101/40 - Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

49.

ELECTRONIC DEVICE

      
Application Number 18432393
Status Pending
Filing Date 2024-02-05
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Ishikawa, Jun

Abstract

An electronic device having a novel structure is provided. A battery is provided in each component of an electronic device, whereby the electronic device includes two batteries. The electronic device including the two batteries and a display portion that can be called a flexible display and has a plurality of foldable portions is provided as a novel device.

IPC Classes  ?

  • G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
  • G06F 1/16 - Constructional details or arrangements
  • G06F 1/26 - Power supply means, e.g. regulation thereof
  • G06F 3/0488 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures
  • G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
  • G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix

50.

Semiconductor Device And Method For Manufacturing The Same

      
Application Number 18435283
Status Pending
Filing Date 2024-02-07
First Publication Date 2024-06-27
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor Kimura, Hajime

Abstract

A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer. The first gate electrode has a region overlapping with the semiconductor layer with the first insulating layer provided therebetween. The second gate electrode has a region overlapping with the semiconductor layer with the second insulating layer provided therebetween. A first region is at least part of a region where the second gate electrode overlaps with the semiconductor layer. A second region is at least part of a region where the pixel electrode is provided. The second insulating layer is thinner in the first region than in the second region.

IPC Classes  ?

  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
  • H01L 29/786 - Thin-film transistors
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/123 - Connection of the pixel electrodes to the thin film transistors [TFT]

51.

Light-Emitting Element

      
Application Number 18527505
Status Pending
Filing Date 2023-12-04
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Seo, Satoshi
  • Shitagaki, Satoko
  • Ohsawa, Nobuharu
  • Inoue, Hideko
  • Suzuki, Kunihiko

Abstract

Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorp-tion spectrum of the phosphorescent compound.

IPC Classes  ?

  • H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
  • C07D 409/10 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing aromatic rings
  • C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials
  • H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K 85/30 - Coordination compounds
  • H10K 85/60 - Organic compounds having low molecular weight
  • H10K 101/10 - Triplet emission

52.

DISPLAY DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE

      
Application Number 18554148
Status Pending
Filing Date 2022-03-20
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kimura, Hajime
  • Katsui, Shuichi
  • Kobayashi, Hidetomo

Abstract

A display device with high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided. A display device that can easily achieve higher definition is provided. A display device with both high display quality and high definition is provided. A display device with high contrast is provided. The display device includes a first wiring to a fourth wiring and a display portion including a first pixel to a third pixel. The second pixel is positioned between the first pixel and the third pixel in a plan view. Each pixel includes a first subpixel and a second subpixel. The first wiring has a function of applying a first potential to the second subpixel included in the first pixel. The second wiring has a function of applying the first potential to the first subpixel included in the second pixel. The third wiring has a function of applying the first potential to the second subpixel included in the second pixel. The fourth wiring has a function of applying the first potential to the first subpixel included in the third pixel. The first wiring and the second wiring are adjacent to each other. The third wiring and the fourth wiring are adjacent to each other. A distance between the first wiring and the second wiring is shorter than a distance between the third wiring and the fourth wiring.

IPC Classes  ?

  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass

53.

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE

      
Application Number 18555927
Status Pending
Filing Date 2022-04-11
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Sasagawa, Shinya
  • Hodo, Ryota
  • Honda, Hiroaki
  • Sasamura, Yasunori

Abstract

Provided is a display device with high display quality. The display device includes a first pixel and a second pixel provided to be adjacent to the first pixel. The first pixel includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer; the second pixel includes a second pixel electrode, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer; each of the first pixel electrode and the second pixel electrode has a tapered shape on a side surface; a taper angle of the tapered shape is smaller than 90 degrees; and the display device includes a region where the distance between the first pixel electrode and the second pixel electrode is less than or equal to one micrometer.

IPC Classes  ?

  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K 71/40 - Thermal treatment, e.g. annealing in the presence of a solvent vapour
  • H10K 71/60 - Forming conductive regions or layers, e.g. electrodes

54.

SEMICONDUCTOR DEVICE

      
Application Number 18581606
Status Pending
Filing Date 2024-02-20
First Publication Date 2024-06-27
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor Kimura, Hajime

Abstract

It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (microcrystalline silicon) are formed over the same substrate. Then, gate electrodes of each transistor are formed with the same layer, and source and drain electrodes are also formed with the same layer. Thus, manufacturing steps are reduced. In other words, two types of transistors can be manufactured by adding only a few steps to the manufacturing process of a bottom gate transistor.

IPC Classes  ?

  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

55.

PARAMETER SEARCH METHOD

      
Application Number 18591680
Status Pending
Filing Date 2024-02-29
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Oguni, Teppei
  • Osada, Takeshi
  • Fukutome, Takahiro

Abstract

A parameter candidate for a semiconductor element is provided. A data set of measurement data is provided to a parameter extraction portion, and a model parameter is extracted. A first netlist is provided to a circuit simulator, simulation is performed using the first netlist and the model parameter, and a first output result is output. A classification model learns the model parameter and the first output result and classifies the model parameter. A second netlist and a model parameter are provided to the circuit simulator. A variable to be adjusted is supplied to a neural network, an action value function is output, and the variable is updated. The circuit simulator performs simulation using the second netlist and the model parameter. When a second output result to be output does not satisfy conditions, a weight coefficient of the neural network is updated. When the second output result satisfies the conditions, the variable is judged to be the best candidate.

IPC Classes  ?

  • G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
  • G06N 3/042 - Knowledge-based neural networks; Logical representations of neural networks
  • G06N 3/08 - Learning methods

56.

ELECTRIC POWER CHARGE AND DISCHARGE SYSTEM

      
Application Number 18596899
Status Pending
Filing Date 2024-03-06
First Publication Date 2024-06-27
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Nagatsuka, Shuhei
  • Kimura, Akihiro

Abstract

An electric power charge and discharge system for an electronic device having a battery, by which the electronic device can be used for a long period of time. In a wireless communication device including a wireless driving portion including a first battery and a wireless charging portion including a second battery, the first battery is charged by electric power from a fixed power supply and the second battery is charged by using electromagnetic waves existing in an external space. Further, the first battery and the second battery are discharged alternately, and during a period in which the first battery is discharged, the second battery is charged.

IPC Classes  ?

  • H01M 10/44 - Methods for charging or discharging
  • H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
  • H02J 50/10 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
  • H02J 50/27 - Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves characterised by the type of receiving antennas, e.g. rectennas
  • H02J 50/40 - Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
  • H04B 1/3883 - Arrangements for mounting batteries or battery chargers

57.

PULSE SIGNAL OUTPUT CIRCUIT AND SHIFT REGISTER

      
Application Number 18596906
Status Pending
Filing Date 2024-03-06
First Publication Date 2024-06-27
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Amano, Seiko
  • Toyotaka, Kouhei
  • Miyake, Hiroyuki
  • Miyazaki, Aya
  • Shishido, Hideaki
  • Kusunoki, Koji

Abstract

An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.

IPC Classes  ?

  • G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • G11C 19/18 - Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • H01L 25/03 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H03K 19/00 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
  • H05K 7/02 - Arrangements of circuit components or wiring on supporting structure

58.

ORGANIC COMPOUND, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE

      
Application Number 18382851
Status Pending
Filing Date 2023-10-23
First Publication Date 2024-06-20
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kawakami, Sachiko
  • Kajiyama, Kazuki

Abstract

An organic compound is represented by General Formula (G1) below. In General Formula (G1), X represents a sulfur atom or an oxygen atom, Ar2 represents a group represented by General Formula (G1-1) below, and Ar1 represents an aryl group having 6 to 30 carbon atoms or a heteroaryl group having 2 to 30 carbon atoms. At least one of R1 to R16 and R21 to R29 represents any of halogen, a nitrile group, an alkenyl group, a vinyl group, an alkynyl group, an ethynyl group, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkylsilyl group having 3 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, and a heteroaryl group having 2 to 30 carbon atoms. An organic compound is represented by General Formula (G1) below. In General Formula (G1), X represents a sulfur atom or an oxygen atom, Ar2 represents a group represented by General Formula (G1-1) below, and Ar1 represents an aryl group having 6 to 30 carbon atoms or a heteroaryl group having 2 to 30 carbon atoms. At least one of R1 to R16 and R21 to R29 represents any of halogen, a nitrile group, an alkenyl group, a vinyl group, an alkynyl group, an ethynyl group, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkylsilyl group having 3 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, and a heteroaryl group having 2 to 30 carbon atoms.

IPC Classes  ?

  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • C07D 209/90 - Benzo [c, d] indoles; Hydrogenated benzo [c, d] indoles
  • C07D 307/87 - Benzo [c] furans; Hydrogenated benzo [c] furans
  • C07D 403/14 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group containing three or more hetero rings
  • C07D 519/00 - Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups or
  • H10K 85/60 - Organic compounds having low molecular weight

59.

Light-Emitting Device

      
Application Number 18520725
Status Pending
Filing Date 2023-11-28
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Ohsawa, Nobuharu

Abstract

To provide a light-emitting device having high efficiency and high reliability. The light-emitting device includes a first electrode, a second electrode, and an organic compound layer; the organic compound layer is between the first electrode and the second electrode; the organic compound layer includes a first light-emitting unit, a second light-emitting unit, and an intermediate layer; the intermediate layer is between the first light-emitting unit and the second light-emitting unit; the intermediate layer includes a mixed layer containing a first organic compound and a second organic compound; the first organic compound is strongly basic; the second organic compound has an electron-transport property; and the first organic compound has a higher LUMO level than the second organic compound.

IPC Classes  ?

  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • H10K 50/16 - Electron transporting layers

60.

Light-Emitting Element, Display Device, Electronic Device, and Lighting Device

      
Application Number 18589868
Status Pending
Filing Date 2024-02-28
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Seo, Satoshi
  • Watabe, Takeyoshi
  • Mitsumori, Satomi

Abstract

To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the guest material is lower than a LUMO level of the host material. An energy difference between the LUMO level and a HOMO level of the guest material is larger than an energy difference between the LUMO level and a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. An energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to energy of light emission of the guest material.

IPC Classes  ?

  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • C07D 241/38 - Heterocyclic compounds containing 1,4-diazine or hydrogenated 1,4-diazine rings condensed with carbocyclic rings or ring systems with only hydrogen or carbon atoms directly attached to the ring nitrogen atoms
  • C07D 403/12 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C07D 405/10 - Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a carbon chain containing aromatic rings
  • C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
  • C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials
  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 85/30 - Coordination compounds
  • H10K 85/60 - Organic compounds having low molecular weight
  • H10K 101/00 - Properties of the organic materials covered by group
  • H10K 101/10 - Triplet emission
  • H10K 101/30 - Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
  • H10K 101/40 - Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

61.

DISPLAY UNIT, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18592944
Status Pending
Filing Date 2024-03-01
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kamada, Taisuke
  • Hatsumi, Ryo
  • Kubota, Daisuke
  • Hashimoto, Naoaki
  • Suzuki, Tsunenori
  • Osaka, Harue
  • Seo, Satoshi

Abstract

An object is to provide a highly reliable display unit having a function of sensing light. The display unit includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer between a pair of electrodes. The light-receiving device and the light-emitting device share one of the electrodes, and may further share another common layer between the pair of electrodes. The hole-injection layer is in contact with an anode and contains a first compound and a second compound. The electron-transport property of the electron-transport layer is low; hence, the light-emitting layer is less likely to have excess electrons. Here, the first compound is the material having a property of accepting electrons from the second compound.

IPC Classes  ?

  • H10K 65/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
  • H10K 39/32 - Organic image sensors
  • H10K 50/16 - Electron transporting layers
  • H10K 50/17 - Carrier injection layers
  • H10K 50/86 - Arrangements for improving contrast, e.g. preventing reflection of ambient light
  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/40 - OLEDs integrated with touch screens
  • H10K 101/30 - Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values

62.

LIGHT-EMITTING APPARATUS AND ELECTRONIC DEVICE

      
Application Number 18287918
Status Pending
Filing Date 2022-04-18
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Suzuki, Tsunenori
  • Ohsawa, Nobuharu
  • Seo, Satoshi

Abstract

A light-emitting device with a high resolution and favorable characteristics manufactured by a photolithography method is provided. The light-emitting apparatus includes first and second light-emitting devices. The first and second light-emitting devices are adjacent to each other. The first light-emitting device includes a first EL layer A and a second EL layer. The second light-emitting device includes a first EL layer B and the second EL layer. The first EL layer A and the first EL layer B are independent of each other. The second EL layer is shared by the first and second light-emitting devices. An end surface of the first EL layer A on the first EL layer B side and an end surface of the first EL layer B on the first EL layer A side face each other. The first EL layer A includes a light-emitting layer. The light-emitting layer includes a light-emitting material, first and second organic compounds. The first organic compound is an organic compound having an electron-transport property. The second organic compound is an organic compound having a hole-transport property.

IPC Classes  ?

  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K 50/15 - Hole transporting layers
  • H10K 50/16 - Electron transporting layers
  • H10K 59/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group
  • H10K 59/123 - Connection of the pixel electrodes to the thin film transistors [TFT]
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 85/60 - Organic compounds having low molecular weight

63.

Display Apparatus and Method For Manufacturing Display Apparatus

      
Application Number 18288333
Status Pending
Filing Date 2022-04-18
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kubota, Daisuke
  • Yamashita, Akio
  • Kamada, Taisuke
  • Nakamura, Daiki

Abstract

A display apparatus that has a light detection function and has a light detection function with high accuracy is provided. The display apparatus includes a light-receiving device and a first light-emitting device. The light-receiving device includes a first electrode, a light-receiving layer, and a common electrode that are stacked in this order. The first light-emitting device includes a second electrode, a first EL layer, and the common electrode that are stacked in this order. The light-receiving layer includes a first layer, a second layer, and an active layer between the first layer and the second layer. The first layer contains a first substance having a hole-transport property, and the second layer contains a second substance having an electron-transport property. An end portion of the active layer, an end portion of the first layer, and an end portion of the second layer are aligned or substantially aligned with one another. The first EL layer includes a third layer, a fourth layer, and a first light-emitting layer between the third layer and the fourth layer. The third layer contains a third substance having a hole-transport property, and the fourth layer contains a fourth substance having an electron-transport property.

IPC Classes  ?

  • H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
  • H10K 50/15 - Hole transporting layers
  • H10K 50/16 - Electron transporting layers
  • H10K 71/20 - Changing the shape of the active layer in the devices, e.g. patterning

64.

LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE

      
Application Number 18397437
Status Pending
Filing Date 2023-12-27
First Publication Date 2024-06-20
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor Kimura, Hajime

Abstract

To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.

IPC Classes  ?

  • G02F 1/1362 - Active matrix addressed cells
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
  • G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
  • G02F 1/1343 - Electrodes
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
  • G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H04N 9/31 - Projection devices for colour picture display

65.

LIGHT-EMITTING DEVICE, DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18515345
Status Pending
Filing Date 2023-11-21
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Yoshizumi, Hideko
  • Ohsawa, Nobuharu

Abstract

A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a first electrode, a second electrode, a first unit, a second unit, and a first intermediate layer. The first unit is between the first electrode and the second electrode. The first unit contains a first light-emitting material. The second unit is between the first unit and the second electrode. The second unit contains a second light-emitting material. The first intermediate layer is between the first unit and the second unit. The first intermediate layer contains a first organic compound and a second organic compound. The first organic compound has an acid dissociation constant pKa larger than or equal to 8. The second organic compound has an acid dissociation constant pKa smaller than 4.

IPC Classes  ?

  • H10K 59/12 - Active-matrix OLED [AMOLED] displays
  • H10K 59/80 - Constructional details
  • H10K 85/20 - Carbon compounds, e.g. carbon nanotubes or fullerenes

66.

Light-Emitting Device

      
Application Number 18521306
Status Pending
Filing Date 2023-11-28
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Ohsawa, Nobuharu
  • Seo, Hiromi

Abstract

A tandem light-emitting device that can be used in a high-resolution display apparatus is provided. The light-emitting device includes a first electrode, a second electrode, and an organic compound layer. The organic compound layer is positioned between the first electrode and the second electrode; the organic compound layer includes a first light-emitting unit, a second light-emitting unit, and an intermediate layer; the intermediate layer is positioned between the first light-emitting unit and the second light-emitting unit; the first light-emitting unit is positioned between the first electrode and the intermediate layer; the first light-emitting unit includes a first light-emitting layer and a first electron-transport layer; the first electron-transport layer is in contact with the intermediate layer; the intermediate layer is configured to block holes moving from the first electrode side to the second electrode side; and the first electron-transport layer is a layer having a bipolar property.

IPC Classes  ?

67.

DISPLAY DEVICE, DISPLAY UNIT, AND DISPLAY SYSTEM

      
Application Number 18589604
Status Pending
Filing Date 2024-02-28
First Publication Date 2024-06-20
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yoshizumi, Kensuke
  • Yanagisawa, Yuichi
  • Takahashi, Kei

Abstract

Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.

IPC Classes  ?

  • G06F 3/14 - Digital output to display device
  • G06F 3/147 - Digital output to display device using display panels
  • H01L 27/146 - Imager structures
  • H04N 5/64 - Constructional details of receivers, e.g. cabinets or dust covers
  • H10K 77/10 - Substrates, e.g. flexible substrates
  • H10K 102/00 - Constructional details relating to the organic devices covered by this subclass

68.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

      
Application Number 18589607
Status Pending
Filing Date 2024-02-28
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor Yamazaki, Shunpei

Abstract

A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.

IPC Classes  ?

  • H01L 21/8234 - MIS technology
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/477 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
  • H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , ,  or
  • H01L 29/49 - Metal-insulator semiconductor electrodes
  • H01L 29/51 - Insulating materials associated therewith
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/786 - Thin-film transistors

69.

DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE

      
Application Number 18591443
Status Pending
Filing Date 2024-02-29
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Koyama, Jun
  • Miyake, Hiroyuki

Abstract

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

IPC Classes  ?

  • G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
  • G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
  • G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/786 - Thin-film transistors
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals

70.

DISPLAY DEVICE HAVING AN OXIDE SEMICONDUCTOR TRANSISTOR

      
Application Number 18592933
Status Pending
Filing Date 2024-03-01
First Publication Date 2024-06-20
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kondo, Toshikazu
  • Koyama, Jun
  • Yamazaki, Shunpei

Abstract

An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

IPC Classes  ?

  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/136 - Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
  • G02F 1/1362 - Active matrix addressed cells
  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/45 - Ohmic electrodes
  • H01L 29/786 - Thin-film transistors

71.

DISPLAY APPARATUS

      
Application Number 18276077
Status Pending
Filing Date 2022-02-10
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Okazaki, Kenichi
  • Nakamura, Daiki
  • Sato, Rai

Abstract

A display apparatus with high display quality is provided. A highly reliable display apparatus is provided. A display apparatus with low power consumption is provided. A display apparatus with a high resolution is provided. A display apparatus with high contrast is provided. The display apparatus includes a plurality of pixels over a first insulating layer. Each of the plurality of pixels includes a first conductive layer provided along an opening portion of the first insulating layer, a second insulating layer over the first conductive layer, an EL layer over the first conductive layer and the second insulating layer, and a common electrode over the EL layer. The second insulating layer is over and in contact with the first conductive layer and placed below the EL layer. The first conductive layers of adjacent pixels are separated by a third insulating layer containing an inorganic material and a fourth insulating layer containing an organic material. A side surface of the first conductive layer and a side surface of the EL layer each include a region in contact with the third insulating layer. The fourth insulating layer is over and in contact with the third insulating layer and placed below the common electrode.

IPC Classes  ?

  • H10K 59/80 - Constructional details
  • H10K 59/124 - Insulating layers formed between TFT elements and OLED elements
  • H10K 59/127 - Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
  • H10K 59/40 - OLEDs integrated with touch screens
  • H10K 59/65 - OLEDs integrated with inorganic image sensors

72.

DISPLAY APPARATUS

      
Application Number 18287928
Status Pending
Filing Date 2022-04-20
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kobayashi, Hidetomo
  • Shishido, Hideaki
  • Katsui, Shuichi

Abstract

A novel display apparatus is provided. The display apparatus includes a first wiring, a second wiring, a first transistor, and a plurality of second transistors. The first wiring extends in a first direction and is supplied with a gate signal. The second wiring extends in a second direction intersecting the first direction and is supplied with a source signal. A gate of the first transistor is electrically connected to the first wiring, one of a source and a drain of the first transistor is electrically connected to the second wiring, and the other of the source and the drain of the first transistor is electrically connected to each gate of the plurality of second transistors. The plurality of second transistors are connected in series or in parallel. The first transistor includes a first semiconductor layer in which current flows in the first direction or the second direction.

IPC Classes  ?

  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals

73.

Organometallic Complex and Light-Emitting Device

      
Application Number 18380338
Status Pending
Filing Date 2023-10-16
First Publication Date 2024-06-13
Owner Semiconductor Enegry Laboratory Co., Ltd. (Japan)
Inventor
  • Yamaguchi, Tomoya
  • Yoshizumi, Hideko
  • Yoshiyasu, Yui
  • Takabatake, Masatoshi
  • Murakami, Hiroki
  • Ohsawa, Nobuharu
  • Kido, Hiromitsu
  • Seo, Satoshi

Abstract

A novel organometallic complex and a novel light-emitting device that are highly useful or reliable are provided. The organometallic complex represented by General Formula (G1) is provided. Note that R1, R2, and R4 to R22 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, at least one of R2 and R4 represents an alkyl group having 1 to 10 carbon atoms, and any one or more of R18 to R22 represent an alkyl group having 3 to 10 carbon atoms or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms. A novel organometallic complex and a novel light-emitting device that are highly useful or reliable are provided. The organometallic complex represented by General Formula (G1) is provided. Note that R1, R2, and R4 to R22 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, at least one of R2 and R4 represents an alkyl group having 1 to 10 carbon atoms, and any one or more of R18 to R22 represent an alkyl group having 3 to 10 carbon atoms or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

IPC Classes  ?

  • C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
  • C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials
  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K 85/30 - Coordination compounds

74.

DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18512373
Status Pending
Filing Date 2023-11-17
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Yamane, Yasumasa
  • Sugisawa, Nozomu
  • Nakamura, Daiki
  • Sato, Hitomi
  • Shimada, Daigo
  • Watabe, Takeyoshi
  • Ohsawa, Nobuharu
  • Isa, Toshiyuki
  • Sasagawa, Shinya
  • Sugaya, Kentaro

Abstract

A novel display device that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and a first layer. The first light-emitting device includes a first electrode, a second electrode, a first unit between the first electrode and the second electrode, and a second layer between the first electrode and the first unit. The first unit includes a first light-emitting material. The second light-emitting device includes a third electrode, a fourth electrode, a second unit between the third electrode and the fourth electrode, and a third layer between the third electrode and the second unit. The second unit includes a second light-emitting material. The first layer is between the first electrode and the second layer and between the third electrode and the third layer, and overlaps with a first gap between the first electrode and the third electrode.

IPC Classes  ?

75.

DISPLAY DEVICE

      
Application Number 18555286
Status Pending
Filing Date 2022-04-01
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Okamoto, Yuki
  • Kawashima, Susumu
  • Onuki, Tatsuya
  • Kobayashi, Hidetomo
  • Kozuma, Munehiro
  • Matsuzaki, Takanori
  • Yamazaki, Shunpei

Abstract

A novel display device is provided. The display device includes a first layer including a driver circuit, a second layer including a plurality of pixel circuits, and a third layer including a plurality of light-emitting elements; the second layer is provided over the first layer; the third layer is provided over the second layer; and a conductive layer is provided between the driver circuit and the plurality of pixel circuits. The driver circuit has a function of controlling operations of the plurality of pixel circuits. One of the plurality of pixel circuits is electrically connected to one of the plurality of light-emitting elements. The pixel circuit has a function of controlling emission luminance of the light-emitting element.

IPC Classes  ?

  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
  • H05B 33/06 - Electrode terminals
  • H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
  • H10K 50/19 - Tandem OLEDs
  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals

76.

DISPLAY DEVICE

      
Application Number 18285303
Status Pending
Filing Date 2022-04-14
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Ikeda, Takayuki
  • Yanagisawa, Yuichi
  • Yamane, Yasumasa

Abstract

A display device that has high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided and a display device that can easily achieve a higher resolution is provided. A display device with both high display quality and a high resolution is provided. A display device with high contrast is provided. The display device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor including silicon in a channel formation region. The second layer includes a second transistor including a metal oxide in a channel formation region. The third layer includes a first light-emitting element, a second light-emitting element, a third light-emitting element, an EL layer including a light-emitting layer exhibiting white light, a first coloring layer over the first light-emitting element, a second coloring layer over the second light-emitting element, and a third coloring layer over the third light-emitting element. Crosstalk is not observed between the second light-emitting element and the third light-emitting element.

IPC Classes  ?

  • H10K 59/80 - Constructional details
  • G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
  • H10K 59/38 - Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

77.

DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18285724
Status Pending
Filing Date 2022-04-05
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kimura, Hajime
  • Ikeda, Takayuki

Abstract

A display apparatus with a novel structure is provided. The display apparatus includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode that are stacked in this order. The light-receiving device comprises a third electrode, an active layer, a first hole-transport layer, the electron-injection layer, and the second electrode that are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.

IPC Classes  ?

  • H10K 59/131 - Interconnections, e.g. wiring lines or terminals
  • H10K 39/34 - Organic image sensors integrated with organic light-emitting diodes [OLED]
  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

78.

DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18286840
Status Pending
Filing Date 2022-04-18
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kubota, Daisuke
  • Hatsumi, Ryo
  • Kamada, Taisuke
  • Kusunoki, Koji

Abstract

A high-resolution display apparatus having a function of detecting light is provided. The display apparatus includes a light-receiving device and a light-emitting device, the light-receiving device includes a first electrode, an active layer over the first electrode, and a second electrode over the active layer, the light-emitting device includes a third electrode, a light-emitting layer over the third electrode, and the second electrode over the light-emitting layer, and a part of the active layer and a part of the light-emitting layer overlap with each other in an outer side of the first electrode and an outer side of the third electrode in a top view.

IPC Classes  ?

  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 39/34 - Organic image sensors integrated with organic light-emitting diodes [OLED]
  • H10K 102/00 - Constructional details relating to the organic devices covered by this subclass

79.

Display Apparatus

      
Application Number 18287339
Status Pending
Filing Date 2022-04-13
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Nakamura, Daiki
  • Yamauchi, Ryo
  • Okazaki, Kenichi
  • Eguchi, Shingo

Abstract

A display apparatus with a wide viewing angle is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a substrate. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second organic layer, and the common electrode. In a top view of the substrate, the first light-emitting element includes a first side and a second side that is shorter than the first side. An absolute value of a difference between a chromaticity difference between a chromaticity in a front direction and a chromaticity in a first direction and a chromaticity difference between the chromaticity in the front direction and a chromaticity in a second direction is less than or equal to 0.05. A projection of the first direction onto the substrate is parallel to the first side, and a projection of the second direction onto the substrate is parallel to the second side. An angle formed by the first direction and a normal direction of a surface of the substrate is 70°, and an angle formed by the second direction and the normal direction of the surface of the substrate is 70°.

IPC Classes  ?

  • H10K 59/122 - Pixel-defining structures or layers, e.g. banks
  • H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K 59/80 - Constructional details

80.

LIQUID CRYSTAL DISPLAY DEVICE

      
Application Number 18411127
Status Pending
Filing Date 2024-01-12
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor Kimura, Hajime

Abstract

To improve viewing angle characteristics by varying voltage which is applied between liquid crystal elements. A liquid crystal display device in which one pixel is provided with three or more liquid crystal elements and the level of voltage which is applied is varied between the liquid crystal elements is varied. In order to vary the level of the voltage which is applied between the liquid crystal elements, an element which divides the applied voltage is provided. In order to vary the level of the applied voltage, a capacitor, a resistor, a transistor, or the like is used. Viewing angle characteristics can be improved by varying the level of the voltage which is applied between the liquid crystal elements.

IPC Classes  ?

  • G02F 1/1362 - Active matrix addressed cells
  • G02F 1/1343 - Electrodes
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
  • G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

81.

ORGANIC COMPOUND, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

      
Application Number 18498700
Status Pending
Filing Date 2023-10-31
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Ogita, Kaori
  • Seo, Satoshi
  • Seo, Hiromi
  • Takahashi, Tatsuyoshi

Abstract

A novel organic compound that forms an exciplex emitting light with high efficiency is provided. An organic compound with a triarylamine skeleton in which the three aryl groups of the triarylamine skeleton are a p-biphenyl group, a fluoren-2-yl group, and a phenyl group to which a dibenzofuranyl group or a dibenzothiophenyl group is bonded. By the use of the organic compound and an organic compound with an electron-transport property, an exciplex that emits light with extremely high efficiency can be formed.

IPC Classes  ?

  • H10K 85/60 - Organic compounds having low molecular weight
  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K 101/10 - Triplet emission

82.

Light-Emitting Device

      
Application Number 18521096
Status Pending
Filing Date 2023-11-28
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Watabe, Takeyoshi
  • Ohsawa, Nobuharu
  • Seo, Hiromi
  • Seo, Satoshi

Abstract

The light-emitting device includes a first electrode, a second electrode, and an organic compound layer between the first electrode and the second electrode. The organic compound layer includes a first light-emitting unit, an intermediate layer, and a second light-emitting unit in this order from the first electrode side. The first light-emitting unit includes a first light-emitting layer, and the second light-emitting unit includes a second light-emitting layer. The intermediate layer includes a first layer, a second layer, and a third layer in this order from the first electrode side, with the second layer being in contact with the first layer and the third layer. The spin density of the first layer is lower than or equal to 1×1017 spins/cm3. The LUMO level of a material included in the second layer is greater than or equal to −4.30 eV and less than or equal to −3.00 eV.

IPC Classes  ?

83.

DISPLAY DEVICE

      
Application Number 18527464
Status Pending
Filing Date 2023-12-04
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yokoyama, Masatoshi
  • Komori, Shigeki
  • Sato, Manabu
  • Okazaki, Kenichi
  • Yamazaki, Shunpei

Abstract

To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

IPC Classes  ?

84.

VEHICLE CONTROL DEVICE AND VEHICLE

      
Application Number 18554430
Status Pending
Filing Date 2022-03-28
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kubota, Daisuke
  • Hatsumi, Ryo
  • Nakamura, Daiki
  • Yoshizumi, Kensuke

Abstract

A vehicle control device with a high security level is provided. The vehicle control device has a structure including an operation portion, a first light-emitting and light-receiving portion, and a control portion. The operation portion includes a steering wheel including a rim, a hub, and a spoke. The rim is connected to the hub through the spoke. The first light-emitting and light-receiving portion is provided along a surface of the hub. The first light-emitting and light-receiving portion includes a first light-emitting element and a first light-receiving element. The first light-emitting element has a function of emitting light in a first wavelength range. The first light-receiving element has a function of receiving the light in the first wavelength range and converting the light in the first wavelength range into an electric signal. The first light-emitting element and the first light-receiving element are arranged side by side on the same plane. The first light-emitting and light-receiving portion has a function of outputting first received-light data to the control portion. The control portion has a function of obtaining first biological information of a driver from the first received-light data and executing first processing in accordance with the first biological information.

IPC Classes  ?

  • B60W 40/08 - Estimation or calculation of driving parameters for road vehicle drive control systems not related to the control of a particular sub-unit related to drivers or passengers
  • A61B 5/021 - Measuring pressure in heart or blood vessels
  • A61B 5/024 - Measuring pulse rate or heart rate
  • A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
  • B60W 50/14 - Means for informing the driver, warning the driver or prompting a driver intervention
  • G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F 21/32 - User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints

85.

SECONDARY BATTERY AND ELECTRONIC DEVICE

      
Application Number 18583956
Status Pending
Filing Date 2024-02-22
First Publication Date 2024-06-13
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor Tajima, Ryota

Abstract

A secondary battery with high capacity per unit volume can be provided. A flexible secondary battery with a novel structure can be provided. A secondary battery that can be bent repeatedly can be provided. A highly reliable secondary battery can be provided. A long-life secondary battery can be provided. A secondary battery comprises an inner structure and an exterior body that surrounds the inner structure. The inner structure comprises a positive electrode and a negative electrode. The exterior body comprises a first exterior film and a second exterior film. A region comprising reduced graphene oxide lies between the first exterior film and the second exterior film. The graphene oxide preferably comprises a region where the concentration of oxygen is higher than or equal to 2 atomic percent and lower than or equal to 20 atomic percent.

IPC Classes  ?

  • H01M 10/04 - Construction or manufacture in general
  • H01M 50/117 - Inorganic material
  • H01M 50/121 - Organic material
  • H01M 50/124 - Primary casings, jackets or wrappings of a single cell or a single battery characterised by the material having a layered structure
  • H01M 50/129 - Primary casings, jackets or wrappings of a single cell or a single battery characterised by the material having a layered structure comprising three or more layers with two or more layers of only organic material
  • H01M 50/133 - Thickness

86.

IMAGING DEVICE, OPERATION METHOD THEREOF, AND ELECTRONIC DEVICE

      
Application Number 18584020
Status Pending
Filing Date 2024-02-22
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yoneda, Seiichi
  • Inoue, Hiroki

Abstract

An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

IPC Classes  ?

  • H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
  • H04N 25/709 - Circuitry for control of the power supply
  • H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
  • H10K 39/32 - Organic image sensors

87.

SEMICONDUCTOR DEVICE

      
Application Number 18584118
Status Pending
Filing Date 2024-02-22
First Publication Date 2024-06-13
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Saito, Seiya
  • Yakubo, Yuto
  • Onuki, Tatsuya
  • Nagatsuka, Shuhei

Abstract

A novel semiconductor device is provided. The semiconductor device includes a driver circuit including a plurality of transistors using a silicon substrate for channels, and a first transistor layer and a second transistor layer including a plurality of transistors using a metal oxide for channels. The first transistor layer and the second transistor layer are provided over the silicon substrate layer. The first transistor layer includes a first memory cell including a first transistor and a first capacitor. The first transistor is electrically connected to a first local bit line. The second transistor layer includes a second transistor whose gate is electrically connected to the first local bit line and a first correction circuit electrically connected to the second transistor. The first correction circuit is electrically connected to a first global bit line. The first correction circuit has a function of holding a voltage corresponding to a threshold voltage of the second transistor in the gate of the second transistor.

IPC Classes  ?

  • G11C 11/4097 - Bit-line organisation, e.g. bit-line layout, folded bit lines
  • G11C 11/4091 - Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
  • H01L 29/786 - Thin-film transistors
  • H10B 12/00 - Dynamic random access memory [DRAM] devices

88.

Display device and operating method thereof

      
Application Number 18142370
Grant Number 12008975
Status In Force
Filing Date 2023-05-02
First Publication Date 2024-06-11
Grant Date 2024-06-11
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kawashima, Susumu
  • Toyotaka, Kouhei
  • Takahashi, Kei

Abstract

A display device that achieves both high-accuracy sensing by a touch sensor unit and smooth input using the touch sensor unit is provided. The display device includes a display unit and the touch sensor unit. The touch sensor unit performs touch sensing operation at a different timing from display image rewriting by the display unit, whereby the high-accuracy sensing can be achieved. The display unit has a function of rewriting a display image only in a region that needs to be rewritten. In the case where the entire display region is not necessarily rewritten, the time for the sensing operation by the touch sensor unit can be lengthened, whereby the smooth input can be achieved.

IPC Classes  ?

  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
  • G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device

89.

DISPLAY PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE

      
Application Number 18387881
Status Pending
Filing Date 2023-11-08
First Publication Date 2024-06-06
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor Kimura, Hajime

Abstract

A novel display panel that is highly convenient or reliable is provided. The display panel includes a first pixel, a second pixel, and a functional layer. The first pixel includes a first display element, and the second pixel includes a second display element. The functional layer includes a first pixel circuit and a second pixel circuit. The first display element includes a first electrode, a second electrode, and a layer containing a liquid crystal material. A first distance is provided between the first electrode and the functional layer. A second distance is provided between the second electrode and the functional layer. The first electrode and the second electrode each include a region overlapping with the layer containing a liquid crystal material. The second distance is shorter than the first distance. The second display element includes a third electrode, a fourth electrode, and the layer containing a liquid crystal material. A third distance is provided between the third electrode and the functional layer. A fourth distance is provided between the fourth electrode and the functional layer. The fourth distance is shorter than the third distance and longer than the first distance.

IPC Classes  ?

  • G02F 1/1343 - Electrodes
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/1362 - Active matrix addressed cells
  • G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
  • G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals

90.

SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND DRIVING METHOD OF SEMICONDUCTOR DEVICE

      
Application Number 18517122
Status Pending
Filing Date 2023-11-22
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Kusunoki, Koji
  • Shishido, Hideaki
  • Kawashima, Susumu
  • Saito, Motoharu
  • Atsumi, Tomoaki

Abstract

A novel semiconductor device is provided. A gate of a second transistor is electrically connected to one of a source and a drain of a first transistor and one of a source and a drain of a third transistor. Aback gate of the second transistor is electrically connected to one of a source and a drain of a fourth transistor and one terminal of a first capacitor. One of a source and a drain of the second transistor is electrically connected to the other of the source and the drain of the third transistor, the other terminal of the first capacitor, and one terminal of a light-emitting element. A semiconductor layer in each of the first, third, and fourth transistors is partly in an opening formed in an insulating layer.

IPC Classes  ?

  • H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
  • G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
  • H10K 59/124 - Insulating layers formed between TFT elements and OLED elements

91.

METHOD FOR MANUFACTURING DISPLAY DEVICE, DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE

      
Application Number 18271962
Status Pending
Filing Date 2022-01-11
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Ikeda, Takayuki
  • Okazaki, Kenichi
  • Yamane, Yasumasa
  • Kimura, Hajime
  • Onuki, Tatsuya

Abstract

A high-resolution or high-definition display device is provided. The display device is manufactured by forming a plurality of first pixel electrodes aligned in a first direction and a plurality of second pixel electrodes aligned in the first direction so that the plurality of first pixel electrodes and the plurality of second pixel electrodes are aligned in a second direction; forming a first layer and a first sacrificial layer; processing the first layer and the first sacrificial layer to expose at least part of the second pixel electrodes; forming a second layer and a second sacrificial layer; processing the second layer and the second sacrificial layer to expose at least part of the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; forming a third layer and a counter electrode; removing at least part of each of the third layer and the counter electrode included in a region between the adjacent pixel electrodes in a top view; forming a protective layer over the counter electrode; processing the protective layer to expose at least part of the counter electrode that overlaps with the pixel electrodes; and forming a conductive layer over the counter electrode and the protective layer.

IPC Classes  ?

92.

MANUFACTURING EQUIPMENT FOR LIGHT-EMITTING DEVICE

      
Application Number 18281619
Status Pending
Filing Date 2022-03-28
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Hodo, Ryota
  • Jinbo, Yasuhiro
  • Okazaki, Kenichi

Abstract

Manufacturing equipment in which processes from processing to sealing of an organic compound film can be successively performed is provided. A patterning process of a light-emitting device and a sealing process that is performed to prevent the surface and side surface of an organic layer from being exposed to the air can be performed successively, whereby a minute light-emitting device with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can be incorporated in in-line manufacturing equipment where apparatuses are arranged in the order of processes for a light-emitting device, resulting in high throughput manufacturing.

IPC Classes  ?

  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • C23C 14/02 - Pretreatment of the material to be coated
  • C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C 14/24 - Vacuum evaporation
  • C23C 14/34 - Sputtering
  • C23C 14/56 - Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
  • C23C 14/58 - After-treatment
  • C23C 16/02 - Pretreatment of the material to be coated
  • C23C 16/40 - Oxides
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • C23C 16/54 - Apparatus specially adapted for continuous coating
  • C23C 16/56 - After-treatment
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F 7/38 - Treatment before imagewise removal, e.g. prebaking

93.

ELECTRONIC DEVICE AND AUTHENTICATION METHOD OF ELECTRONIC DEVICE

      
Application Number 18285499
Status Pending
Filing Date 2022-04-15
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Yoshizumi, Kensuke
  • Kusumoto, Naoto

Abstract

A lightweight, foldable electronic device with an input function is provided. The electronic device is provided with a foldable display apparatus; the display apparatus has an input function, an authentication function, and the like, and is capable of operating the electronic device with or without contact. The display apparatus includes a light-emitting device and a light-receiving device in a display portion. The light-emitting device has a function of performing display. The light-emitting device may also have a light-emitting function for aiding input operation. The light-receiving device has an imaging function and a function of a sensor for performing input operation.

IPC Classes  ?

  • G06V 40/13 - Sensors therefor
  • G06F 3/04886 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures by partitioning the display area of the touch-screen or the surface of the digitising tablet into independently controllable areas, e.g. virtual keyboards or menus
  • H10K 39/34 - Organic image sensors integrated with organic light-emitting diodes [OLED]

94.

Display Apparatus

      
Application Number 18285529
Status Pending
Filing Date 2022-03-29
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Okazaki, Kenichi
  • Kusunoki, Koji
  • Kuwabara, Hideaki
  • Oikawa, Yoshiaki

Abstract

A display apparatus with a novel structure is provided. The display apparatus includes a display surface, a flexible non-rectangular substrate over which part of the display surface is formed, and a light-emitting device formed over the flexible substrate. The light-emitting device includes pixel regions formed in a matrix. The display surface has a convex or concave region when part of the flexible non-rectangular substrate is bent. A novel light-emitting apparatus, a novel display apparatus, a novel input/output apparatus, or a novel semiconductor apparatus can be achieved. The display apparatus enables the degree of design flexibility of a display apparatus to be increased and design of the display apparatus to be improved.

IPC Classes  ?

  • H10K 59/95 - Assemblies of multiple devices comprising at least one organic light-emitting element comprising only organic light-emitting elements
  • H10K 102/00 - Constructional details relating to the organic devices covered by this subclass

95.

MOVING OBJECT

      
Application Number 18285959
Status Pending
Filing Date 2022-04-11
First Publication Date 2024-06-06
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Kimura, Hajime
  • Oikawa, Yoshiaki
  • Hayashi, Kentaro

Abstract

A moving object including a display apparatus capable of performing highly visible display is provided. The moving object includes a display unit, an imaging unit, an arithmetic unit, and a control unit. The display unit has a function of displaying a display image. The imaging unit has a function of obtaining a first captured image including the display image and an external view overlapping with the display image. The arithmetic unit has a function of comparing a color of the display image and a color of the external view and correcting the color of the display image on the basis of a comparison result. The control unit has a function of controlling running of the moving object on the basis of the first captured image.

IPC Classes  ?

  • B60K 35/234 - controlling the brightness, colour or contrast of virtual images depending on the driving conditions or on the condition of the vehicle or the driver
  • G06V 20/59 - Context or environment of the image inside of a vehicle, e.g. relating to seat occupancy, driver state or inner lighting conditions
  • G09G 5/10 - Intensity circuits

96.

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

      
Application Number 18434977
Status Pending
Filing Date 2024-02-07
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Yamazaki, Shunpei
  • Sakata, Junichiro
  • Tsubuku, Masashi
  • Akimoto, Kengo
  • Hosoba, Miyuki
  • Sakakura, Masayuki
  • Oikawa, Yoshiaki

Abstract

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

IPC Classes  ?

  • H01L 21/477 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
  • G02F 1/1333 - Constructional arrangements
  • G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/786 - Thin-film transistors

97.

Wiring Layer And Manufacturing Method Therefor

      
Application Number 18436245
Status Pending
Filing Date 2024-02-08
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Okazaki, Yutaka
  • Moriwaka, Tomoaki
  • Sasagawa, Shinya
  • Ohtsuki, Takashi

Abstract

To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.

IPC Classes  ?

  • H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L 29/66 - Types of semiconductor device
  • H01L 29/786 - Thin-film transistors

98.

Organic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device

      
Application Number 18436617
Status Pending
Filing Date 2024-02-08
First Publication Date 2024-06-06
Owner Semiconductor Energy Laboratory Co., Ltd. (Japan)
Inventor
  • Hirose, Tomoya
  • Kadoma, Hiroshi
  • Shitagaki, Satoko
  • Seo, Satoshi

Abstract

A novel organic compound with which the emission characteristics, emission efficiency, and reliability of a light-emitting element can be improved is provided. The organic compound has an imidazo[1,2-f]phenanthridine skeleton and a dibenzothiophene skeleton or a dibenzofuran skeleton bonded through an arylene group. The light-emitting element including the organic compound in a light-emitting layer shows high efficiency and low power consumption.

IPC Classes  ?

  • H10K 85/60 - Organic compounds having low molecular weight
  • H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
  • H10K 85/30 - Coordination compounds
  • H10K 101/10 - Triplet emission
  • H10K 102/10 - Transparent electrodes, e.g. using graphene

99.

METHOD FOR MANUFACTURING GRAPHENE-COATED OBJECT, NEGATIVE ELECTRODE OF SECONDARY BATTERY INCLUDING GRAPHENE-COATED OBJECT, AND SECONDARY BATTERY INCLUDING THE NEGATIVE ELECTRODE

      
Application Number 18437317
Status Pending
Filing Date 2024-02-09
First Publication Date 2024-06-06
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Oguni, Teppei
  • Osada, Takeshi
  • Takeuchi, Toshihiko

Abstract

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

IPC Classes  ?

  • C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
  • B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
  • C25D 13/22 - Servicing or operating
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 4/04 - Processes of manufacture in general
  • H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
  • H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 4/134 - Electrodes based on metals, Si or alloys
  • H01M 4/139 - Processes of manufacture
  • H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
  • H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/587 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries

100.

POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE

      
Application Number 18442450
Status Pending
Filing Date 2024-02-15
First Publication Date 2024-06-06
Owner SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Japan)
Inventor
  • Takahashi, Masahiro
  • Ochiai, Teruaki
  • Momma, Yohei
  • Tsuruta, Ayae

Abstract

A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

IPC Classes  ?

  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
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