A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.
A display apparatus having a photoelectric conversion function with high sensitivity is provided. The light extraction efficiency of the display apparatus is increased. The display apparatus includes a light-emitting device, a light-emitting and light-receiving device, a first lens, and a second lens. The light-emitting device has a function of emitting light of a first color. The light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color and converting it into an electric signal. The light emitted by the light-emitting device is emitted to the outside of the display apparatus through the first lens. Light enters the light-emitting and light-receiving device from the outside of the display apparatus through the second lens.
One embodiment of the present invention provides a display device from which a driver or a fellow passenger in a mobile body such as a vehicle can easily obtain desired information. One embodiment of the present invention is a display device including a display panel. The display panel is placed inside a mobile body including window glass. A film including a light-blocking layer is provided between the window glass and the display panel of the mobile body. By providing a driving unit controlling the display panel, the positional relationship between the window glass and the display panel is changed. Alternatively, by providing a driving unit controlling the film including the light-blocking layer, the positional relationship between the window glass and the film including the light-blocking layer is changed.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
A secondary battery with little deterioration is provided. A secondary battery with high safety is provided. A separator having excellent characteristics is provided. A separator achieving the secondary battery with high safety is provided. A novel separator is provided. In the separator, a polymer porous film and a layer including a ceramic-based material containing a metal oxide microparticle are stacked, the thickness of the layer including a ceramic-based material is greater than or equal to 1 μm and less than or equal to 100 μm, and the film thickness of the polymer porous film is greater than or equal to 4 μm and less than or equal to 50 μm.
H01M 50/451 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising layers of only organic material and layers containing inorganic material
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 50/403 - Manufacturing processes of separators, membranes or diaphragms
A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes an anode over a cathode with an EL layer sandwiched therebetween. The EL layer includes at least a light-emitting layer and an oxidation-resistant layer over the light-emitting layer. The EL layer has a side surface. The light-emitting device includes a block layer in contact with a top surface and the side surface of the EL layer. The cathode is in contact with the side surface of the EL layer with the block layer therebetween. The block layer includes a heterocyclic compound. In the light-emitting device with the above structure, the oxidation-resistant layer may include any one or a plurality of oxides of metals belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.
A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first light-emitting device, and a second light-emitting device. The top surfaces of the first insulating layer, the first conductive layer, and the second conductive layer are level or substantially level with one another. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode over the first conductive layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer, and the common electrode over the second conductive layer. The second insulating layer covers a side surface of each of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer.
A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.
A positive electrode active material with high charge and discharge capacity is provided. A novel positive electrode active material is provided. The positive electrode active material is manufactured in such a manner that after a cobalt compound (also referred to as a precursor) containing nickel, cobalt, and manganese is obtained by a coprecipitation method, a mixture obtained by mixing a lithium compound and the cobalt compound is heated at a first temperature; after the mixture is ground or crushed, heating at a second temperature that is a temperature higher than the first temperature is further performed; and after an additive is mixed, third heat treatment is performed. The first temperature is higher than or equal to 400° C. and lower than or equal to 700° C. The second temperature is higher than 700° C. and lower than or equal to 1050° C.
An object of one embodiment of the present invention is to achieve a manufacturing method which can increase capacity density of a secondary battery. Another object is to provide a manufacturing method of a highly safe or reliable secondary battery. The manufacturing method of electrodes (a positive electrode and a negative electrode) of a secondary battery includes a vibration treatment step for supplying vibration to the electrode and a press step for applying pressure to the electrode to compress an active material layer in the electrode. The vibration treatment step is performed before the press step.
A touch panel which is thin, has a simple structure, or is easily incorporated into an electronic device is provided. The touch panel includes a first substrate, a second substrate, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, liquid crystal, and an FPC. The first conductive layer has a function of a pixel electrode. The second conductive layer has a function of a common electrode. The third and fourth conductive layers each have a function of an electrode of a touch sensor. The FPC is electrically connected to the fourth conductive layer. The first, second, third, and fourth conductive layers and the liquid crystal are provided between the first and second substrates. The first, second, and third conductive layers are provided over the first substrate. The FPC is provided over the first substrate.
To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.
An arithmetic device and an electronic device having small power consumption is provided. An arithmetic device and an electronic device capable of high-speed operation is provided. An arithmetic device and an electronic device capable of suppressing heat generation is provided. The arithmetic device includes a first arithmetic portion and a second arithmetic portion. The first arithmetic portion includes a first CPU core and a second CPU core. The second arithmetic portion includes a first GPU core and a second GPU core. The CPU cores each have a power gating function and each include a first data retention circuit electrically connected to a flip-flop. The first GPU core includes a second data retention circuit capable of retaining an analog value and reading out the analog value as digital data of two or more bits. The second GPU core includes a third data retention circuit capable of retaining a digital value and reading out the digital value as digital data of one bit. The first to third data retention circuits each include a transistor including an oxide semiconductor and a capacitor.
G06F 1/3234 - Power saving characterised by the action undertaken
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
G06T 1/20 - Processor architectures; Processor configuration, e.g. pipelining
A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.
A novel method for forming a positive electrode active material is provided. In the method for forming a positive electrode active material, a cobalt source and an additive element source are mixed to form an acidic solution; the acidic solution and an alkaline solution are made to react to form a cobalt compound; the cobalt compound and a lithium source are mixed to form a mixture; and the mixture is heated. The additive element source is a compound containing one or more selected from gallium, aluminum, boron, nickel, and indium.
A high-resolution display device is provided. The display device includes first and second light-emitting devices, first and second coloring layers, and first, second, and third insulators; the first coloring layer is positioned to overlap with the first light-emitting device; the second coloring layer is positioned to overlap with the second light-emitting device; the first light-emitting device and the second light-emitting device have a function of emitting white light; the first coloring layer and the second coloring layer have a function of transmitting visible light of different colors; the first light-emitting device includes a first conductive layer and a first light-emitting layer over the first conductive layer; the second light-emitting device includes a second conductive layer and a second light-emitting layer over the second conductive layer; the first insulator is in contact with at least part of a side surface of the first light-emitting device; the second insulator is in contact with at least part of a side surface of the second light-emitting device; the first insulator and the second insulator are positioned over the third insulator; and the third insulator is positioned to cover an end portion of the first conductive layer and an end portion of the second conductive layer.
A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G06F 1/16 - Constructional details or arrangements
H05K 5/00 - Casings, cabinets or drawers for electric apparatus
H05K 5/02 - Casings, cabinets or drawers for electric apparatus - Details
To provide a thin touch panel, a touch panel having a simple structure, a touch panel which can be easily incorporated into an electronic device, or a touch panel with a small number of components. The touch panel includes pixel electrodes arranged in a matrix, a plurality of signal lines, a plurality of scan lines, a plurality of first wirings extending in a direction parallel to the signal lines, and a plurality of second wirings extending in a direction parallel to the scan line. Part of the first wiring and part of the second wiring function as a pair of electrodes included in a touch sensor. The first wiring and the second wiring each have a stripe shape or form a mesh shape and are each provided between two adjacent pixel electrodes in a plan view.
A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
H01M 10/0567 - Liquid materials characterised by the additives
19.
CAPACITOR, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
20.
POWER STORAGE DEVICE, BATTERY MANAGEMENT UNIT, AND ELECTRONIC DEVICE
A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.
H01G 11/82 - Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
A display apparatus having both a personal authentication function and a high resolution is provided. The display apparatus includes a display portion and a sensor portion. The display portion includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first EL layer. The second light-emitting element includes a second EL layer. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light. The light-receiving element has a function of detecting infrared light. A distance between the first EL layer and the second EL layer is less than or equal to 6 μm.
A high-resolution display apparatus having a function of sensing light is provided. A high-definition display apparatus having a function of sensing light is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a third light-emitting device, a first light-receiving device, and a second light-receiving device in a first pixel. The first light-emitting device has a function of emitting red light. The second light-emitting device has a function of emitting green light. The third light-emitting device has a function of emitting blue light. The first light-receiving device has a function of sensing light emitted from at least one of the three light-emitting devices. The second light-receiving device has a function of sensing infrared light.
A display device having a function of detecting an object that is in contact with or approaches a display portion is provided. The display device includes a light-emitting element and a light-receiving element. The light-emitting element includes a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode. The light-receiving element includes a second pixel electrode, a second functional layer, a light-receiving layer, the common layer, and the common electrode. The first functional layer includes one of a hole-injection layer and an electron-injection layer. The second functional layer includes one of a hole-transport layer and an electron-transport layer. The common layer has a function of the other of the hole-injection layer and the electron-injection layer in the light-emitting element and has a function of the other of the hole-transport layer and the electron-transport layer in the light-receiving element.
A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer containing an inorganic insulating material is provided between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer to face each other. The common electrode is provided along the side surface of the first EL layer, the side surface of the second EL layer, and a top surface of the insulating layer. A width of the insulating layer is larger than or equal to 2 times and smaller than or equal to 4 times a distance between the first pixel electrode and the second pixel electrode.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
A display device includes a display panel mounted on a curved surface, and driver circuits including circuit elements which are mounted on a plurality of plane surfaces provided on the back of the curved surface in a stepwise shape along the curved surface.
A display device having a biometric authentication function is provided. A highly convenient display device is provided. The display device includes a first substrate, a light guide plate, a plurality of first light-emitting elements, a second light-emitting element, and a plurality of light-receiving elements. The light guide plate includes a first portion having a first surface and a second portion having a second surface that connects with the first surface and has a different normal direction from the first surface. The first light-emitting elements and the light-receiving elements are provided between the first substrate and the light guide plate. The first light-emitting elements have a function of emitting first light through the light guide plate, and the second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving elements have a function of receiving the second light and converting the second light to an electric signal. The first light includes visible light, and the second light includes infrared light.
H10K 65/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
A novel semiconductor device formed with single-polarity circuits using OS transistors is provided. Thus, connection between different layers in a memory circuit is unnecessary. This can reduce the number of connection portions and improve the flexibility of circuit layout and the reliability of the OS transistors. In particular, many memory cells are provided; thus, the memory cells are formed with single-polarity circuits, whereby the number of connection portions can be significantly reduced. Further, by providing a driver circuit in the same layer as the cell array, many wirings for connecting the driver circuit and the cell array can be prevented from being provided between layers, and the number of connection portions can be further reduced. An interposer provided with a plurality of integrated circuits can function as one electronic component.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H10B 12/00 - Dynamic random access memory [DRAM] devices
A semiconductor device having favorable display quality is provided. The semiconductor device is provided with a display portion, a line-of-sight sensor portion, a control portion, and an arithmetic portion. The line-of-sight sensor portion has a function of obtaining first information showing a direction of a user's line of sight. The arithmetic portion has a function of determining a first region including a gaze point of the user on the display portion with use of the first information and a function of increasing a definition of an image displayed on the first region. Light emitted from the display portion may be used to obtain the first information showing the direction of the line of sight.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
31.
DISPLAY APPARATUS, DISPLAY MODULE, AND ELECTRONIC DEVICE
A multifunctional display apparatus with high resolution is provided. The display apparatus includes a first pixel; the first pixel includes a first light-emitting device, a second light-emitting device, and a first light-receiving device; the first light-emitting device includes a first light-emitting layer; the second light-emitting device includes a second light-emitting layer; the second light-emitting device has a function of emitting white light; the first light-emitting device has a function of emitting visible light of a color different from that of the second light-emitting device; the first light-receiving device has a function of sensing light emitted from the first light-emitting device; a side surface of the first light-emitting layer faces a side surface of the second light-emitting layer; and the distance between the side surface of the first light-emitting layer and the side surface of the second light-emitting layer is less than or equal to 8 μm.
A high-resolution display device in which delay of input signals to pixels is reduced is provided. In the display device, a first layer, a second layer, and a third layer are formed in this order from the bottom. The first layer includes a driver circuit and a plurality of first wirings, the second layer includes a plurality of first contact portions, and the third layer includes a pixel array and a plurality of second wirings. The pixel array includes a plurality of pixel circuits. The plurality of second wirings are parallel to each other and extended in the column direction of the pixel array, and the plurality of pixel circuits are electrically connected to the plurality of second wirings. The driver circuit includes a plurality of output terminals positioned along a first direction. The plurality of first wirings are extended perpendicular to the first direction, and the plurality of output terminals are electrically connected to the plurality of first wirings. The plurality of first wirings are electrically connected to the plurality of second wirings through the plurality of first contact portions.
H10K 59/131 - Interconnections, e.g. wiring lines or terminals
G09G 3/3258 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H10B 12/00 - Dynamic random access memory [DRAM] devices
34.
Functional Panel, Display Device, Input/Output Device, and Data Processing Device
A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first element and a second element. The first element includes a first electrode, a second electrode, and a first optical functional layer. The first optical functional layer includes a region interposed between the first electrode and the second electrode. The first optical functional layer includes a first layer and a layer containing a first light-emitting material. The second element includes a third electrode, the second electrode, and a second optical functional layer. The second optical functional layer includes a region interposed between the third electrode and the second electrode. The second optical functional layer includes the first layer and a layer containing a photoelectric conversion material. The first layer includes a region interposed between the layer containing the first light-emitting material and the second electrode and a region interposed between the layer containing the photoelectric conversion material and the second electrode. The layer containing the photoelectric conversion material contains an organic high molecular material.
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H10K 59/123 - Connection of the pixel electrodes to the thin film transistors [TFT]
The reliability of a light-emitting device is improved. Provided is a light-emitting device including a light-emitting layer between a first electrode and a second electrode. The light-emitting layer contains a light-emitting substance and a first organic compound. A difference between a sum of energy of the first organic compound in a ground state and energy of an oxygen molecule in a ground state and energy of a transition state formed by the first organic compound and the oxygen molecule is greater than or equal to 1.84 eV. A difference between the energy of the transition state formed by the first organic compound and the oxygen molecule and energy of an oxygen adduct of the first organic compound in a ground state is less than or equal to 0.87 eV.
To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A novel method for forming a positive electrode active material is provided. The method for forming a positive electrode active material includes causing a reaction between a cobalt aqueous solution and an alkaline aqueous solution to form a cobalt compound; mixing the cobalt compound and a lithium compound and performing a first heat treatment to form a first composite oxide; mixing the first composite oxide and a compound containing a first additive element and performing a second heat treatment to form a second composite oxide; and mixing the second composite oxide and a compound containing a second additive element and performing a third heat treatment. The first heat treatment is performed at a temperature higher than or equal to 700° C. and lower than or equal to 1100° C. The second heat treatment is performed at a temperature higher than or equal to 700° C. and lower than or equal to 1000° C. The third heat treatment is performed at a temperature equal to the temperature of the second heat treatment or at a temperature lower than the temperature of the second heat treatment.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
A display device with high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided. A display device that can easily achieve higher resolution is provided. A display device with both high display quality and high resolution is provided. A display device with high contrast is provided. The display device includes a first conductive layer, a first insulating layer over the first conductive layer, a second conductive layer including a first region over the first insulating layer and a second region in an opening provided in the first insulating layer, a second insulating layer over the first insulating layer, a third insulating layer over the second region, an EL layer including a third region over the first region, a fourth region over the second insulating layer, and a fifth region over the third insulating layer, and a third conductive layer over the EL layer. The opening is provided in the first insulating layer so as to reach a top surface of the first conductive layer. A top surface of the first region, a top surface of the second insulating layer, and a top surface of the third insulating layer are substantially level with each other.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
H10K 59/124 - Insulating layers formed between TFT elements and OLED elements
41.
ELECTRONIC DEVICE, STORAGE MEDIUM, PROGRAM, AND DISPLAYING METHOD
An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.
G06F 1/16 - Constructional details or arrangements
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
G06F 3/0484 - Interaction techniques based on graphical user interfaces [GUI] for the control of specific functions or operations, e.g. selecting or manipulating an object, an image or a displayed text element, setting a parameter value or selecting a range
A highly sensitive imaging device that can perform imaging even under a low illuminance condition is provided. One electrode of a photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of a first transistor and one of a source electrode and a drain electrode of a third transistor. The other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor. The other electrode of the photoelectric conversion element is electrically connected to a first wiring. A gate electrode of the first transistor is electrically connected to a second wiring. When a potential supplied to the first wiring is HVDD, the highest value of a potential supplied to the second wiring is lower than HVDD.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first conductive layer, a second conductive layer over the first conductive layer, a first light-emitting layer over the second conductive layer, and a common electrode over the first light-emitting layer. The second light-emitting device includes a third conductive layer, a fourth conductive layer over the third conductive layer, a second light-emitting layer over the fourth conductive layer, and the common electrode over the second light-emitting layer. The second conductive layer covers a side surface of the first conductive layer, the fourth conductive layer covers a side surface of the third conductive layer, an end portion of the first light-emitting layer is aligned or substantially aligned with an end portion of the second conductive layer, and an end portion of the second light-emitting layer is aligned or substantially aligned with an end portion of the fourth conductive layer.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.
H10K 59/127 - Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
H04M 1/02 - Constructional features of telephone sets
When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A novel organic compound that is highly convenient, useful, or reliable is to be provided. The organic compound is represented by General Formula (G0).
A novel organic compound that is highly convenient, useful, or reliable is to be provided. The organic compound is represented by General Formula (G0).
A novel organic compound that is highly convenient, useful, or reliable is to be provided. The organic compound is represented by General Formula (G0).
In General Formula (G0), X and Y each independently represent an oxygen atom or a sulfur atom. Ar1 to Ar4 each independently represent an aromatic ring or a nitrogen-containing heteroaromatic ring, the aromatic ring contains 6 to 10 carbon atoms, and the nitrogen-containing heteroaromatic ring is composed only of one or more six-membered rings and contains 4 to 9 carbon atoms. R, R11, R21, R21, R22, R31, R32, R41, and R42 each independently represent hydrogen, a straight-chain alkyl group having 1 to 6 carbon atoms, a branched alkyl group having 3 to 7 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, substituted or unsubstituted diarylamine having 6 to 13 carbon atoms, or substituted or unsubstituted heteroarylamine having 3 to 18 carbon atoms.
A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.
A high-resolution or high-definition display device is provided. The display device is manufactured by forming a conductive film, a first layer, and a first sacrificial layer; processing the first layer and the first sacrificial layer to expose part of the conductive film; forming a second layer over the first sacrificial layer and the conductive film; forming a second sacrificial layer; processing the second layer and the second sacrificial layer to expose part of the conductive film; processing the conductive film to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer; forming an insulating film covering at least side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer, side and top surfaces of the first sacrificial layer, and side and top surfaces of the second sacrificial layer; processing the insulating film to form a sidewall covering at least the side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer; removing the first sacrificial layer and the second sacrificial layer; and forming a common electrode over the first layer and the second layer.
A semiconductor device having favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a first transistor, a second transistor, a first insulating layer, and a second insulating layer. The first transistor includes a first semiconductor layer, a first gate insulating layer, and a first gate electrode. The first semiconductor layer includes a metal oxide. The second transistor includes a second semiconductor layer, a second gate insulating layer, and a second gate electrode. The second semiconductor layer includes crystalline silicon. The first insulating layer includes a region overlapping with the first transistor with the second insulating layer therebetween. The second insulating layer includes a region overlapping with the second transistor with the first insulating layer therebetween. The second insulating layer has higher film density than the first insulating layer.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between circuits. The display device includes a bent portion obtained by bending an element substrate. A circuit for driving the display device is provided in the bent portion and a wiring extends from the circuit, whereby the strength of a portion including the circuit for driving the display device is increased and failure of the circuit is reduced. Furthermore, the element substrate is bent in a connecting portion between an external terminal electrode and an external connecting wiring (FPC) so that the element substrate provided with the external terminal electrode fits the external connecting wiring, whereby the strength of the connecting portion is increased.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
A display apparatus includes a data generation circuit, a source driver circuit, and a pixel. The source driver circuit is electrically connected to the pixel through first and second wirings. The pixel includes a display device that is a liquid crystal device, a potential of one electrode of the display device can be a potential of the first wiring, and a potential of the other electrode of the display device can be a potential of the second wiring. The image data generation circuit has a function of generating digital image data including first and second data. One of the first and second wirings is made to have a potential corresponding to first data, and the other of the first and second wirings is made to have a potential corresponding to the second_data. The potential of the first wiring and the potential of the second wiring are interchanged.
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
54.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A display apparatus having a light detection function is provided. The display apparatus includes a first pixel and a second pixel. The first pixel includes a first subpixel and a second subpixel. The second pixel includes a third subpixel. The first subpixel is a subpixel that emits light with the shortest wavelength (e.g., blue light or light with a shorter wavelength than blue light) in subpixels included in the first pixel. The second subpixel has a function of receiving the light emitted by the first subpixel. The third subpixel is a subpixel that emits light with the shortest wavelength in subpixels included in the second pixel. The wavelength of the light emitted by the first subpixel is shorter than the wavelength of the light emitted by the third subpixel.
A proofreading system that allows a user to easily judge whether or not there is an error in writing or the like. A proofreading method using a comparison image group obtained by dividing a sentence included in a comparison document group into a plurality of first terms and converting the first terms into images is provided. Specifically, first, a sentence included in a designated document is divided into a plurality of second terms, and the appearance frequency in the comparison document group of the plurality of second terms are obtained. Next, the second term with the appearance frequency lower than or equal to a threshold value of the plurality of second terms are imaged to obtain a verification image. After that, similarity degrees between the verification image and comparison images included in the comparison image group are obtained, and the first term represented by the comparison image with the highest similarity degree of the comparison images is presented. The presentation is performed by displaying that the second term represented by the verification image can be an error in writing of the first term represented by the comparison image having a high similarity degree with the verification image.
A light-emitting device with a high resolution and high efficiency is provided. The light-emitting device includes a first EL layer, an intermediate layer, and a second EL layer between first and second electrodes. The first EL layer is provided between the first electrode and the intermediate layer, and the second EL layer is provided between the second electrode and the intermediate layer. Side surfaces of the first EL layer, the intermediate layer, and the second EL layer are substantially aligned. The first EL layer includes a layer having an electron-transport property. The intermediate layer is provided in contact with the layer having an electron-transport property. The intermediate layer includes a first organic compound and an alkali metal or a compound of an alkali metal. The layer having an electron-transport property includes a second organic compound. The second organic compound has a higher glass transition temperature than the first organic compound.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
58.
Display Device, Manufacturing Method of Display Device, and Electronic Device
A display device capable of displaying a high-quality image is provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first lower electrode, a first light-emitting layer over the first lower electrode, and a first upper electrode over the first light-emitting layer. The second light-emitting element includes a second lower electrode, a second light-emitting layer over the second lower electrode, and a second upper electrode over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer. The first upper electrode includes a region projecting from a side surface of the first light-emitting layer. The second upper electrode includes a region projecting from a side surface of the second light-emitting layer.
A high-resolution or high-definition display device is provided. The display device includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first pixel electrode, a first hole-injection layer, a first hole-transport layer, a first light-emitting layer, a first electron-transport layer, a second electron-transport layer, and a common electrode that are stacked in this order. The second light-emitting device includes a second pixel electrode, a second hole-injection layer, a second hole-transport layer, a second light-emitting layer, a third electron-transport layer, a second electron-transport layer, and a common electrode that are stacked in this order. The first light-emitting device and the second light-emitting device have a function of emitting light of different colors from each other. The second electron-transport layer covers at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first light-emitting layer, and a side surface of the second light-emitting layer.
A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.
A display device in which a puddle in the vicinity of a partition of a light-emitting element is reduced when a light-emitting layer is formed by a wet process is provided. The display device includes a first anode; a second anode adjacent to the first anode in an X direction; a third anode adjacent to the first anode in a Y direction; a hole-injection layer provided across the first anode to the third anode; a partition provided over the hole-injection layer; a first light-emitting layer; a second light-emitting layer; a third light-emitting layer; and a cathode. The partition includes, in a top view, a first region positioned between the first anode and the third anode and extending in the X direction, and a second region positioned between the first anode and the second anode and extending in the Y direction. The height of the first region is larger than the height of the second region in a cross-sectional view of the partition.
H10K 71/13 - Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
H10K 71/60 - Forming conductive regions or layers, e.g. electrodes
A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.
G09G 3/3275 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] - Details of drivers for data electrodes
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
G09G 3/3266 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] - Details of drivers for scan electrodes
G09G 5/377 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of individual graphic patterns using a bit-mapped memory - Details of the operation on graphic patterns for mixing or overlaying two or more graphic patterns
H10K 59/127 - Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
63.
POSITIVE ELECTRODE ACTIVE MATERIAL AND SECONDARY BATTERY
A positive electrode active material having a high charge-discharge capacity and high safety and a secondary battery including the positive electrode active material are provided. The positive electrode active material includes lithium, a transition metal M, an additive element, and oxygen. The powder volume resistivity of the positive electrode active material is higher than or equal to 1.0×105 Ω·cm at a temperature of higher than or equal to 180° C. and lower than or equal to 200° C. and at a pressure of higher than or equal to 0.3 MPa and lower than or equal to 2 MPa. The median diameter of the positive electrode active material is preferably greater than or equal to 3 μm and less than or equal to 10 μm.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 50/109 - Primary casings, jackets or wrappings of a single cell or a single battery characterised by their shape or physical structure of button or coin shape
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.
An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.
H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
H03K 19/17758 - Structural details of configuration resources for speeding up configuration or reconfiguration
H03K 19/17772 - Structural details of configuration resources for powering on or off
66.
Display Device, Method For Manufacturing Display Device, and Electronic Device
A display device that can display a high-quality image is provided. The display device includes a first conductive layer, a second conductive layer, a light-emitting layer, and a lens. The light-emitting layer is provided over the first conductive layer, the second conductive layer is provided over the light-emitting layer, and the lens is provided over the second conductive layer. The lens contains a photosensitive material. An end portion of the lens is located more outward than an end portion of the light-emitting layer and an end portion of the second conductive layer. The display device further includes an insulating layer, and the insulating layer includes a region in contact with a top surface of the lens, a region in contact with a side surface of the second conductive layer, and a region in contact with a side surface of the light-emitting layer.
A novel light-emitting device that is highly convenient, useful, or reliable is provided. A light-emitting device including a second electrode over a first electrode with an EL layer sandwiched therebetween is provided. The EL layer includes a light-emitting layer and an oxidation-resistant layer over the light-emitting layer. The EL layer includes a side surface. The light-emitting device includes a block layer in contact with a top surface and the side surface of the EL layer. The second electrode is in contact with the side surface of the EL layer through the block layer. The oxidation-resistant layer includes any one or a plurality of oxides of metals belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.
A novel organometallic complex is provided. An organometallic complex represented by General Formula (G1) includes iridium, a first ligand, and a second ligand. Each of the first ligand and the second ligand is a cyclometalated ligand. The first ligand has a quinoline ring coordinated to the iridium. The second ligand has a pyrimidine ring coordinated to the iridium. At least one of the first ligand and the second ligand includes a substituted or unsubstituted aryl group as a substituent. The proportion of the first ligand is twice the proportion of the second ligand.
A novel organometallic complex is provided. An organometallic complex represented by General Formula (G1) includes iridium, a first ligand, and a second ligand. Each of the first ligand and the second ligand is a cyclometalated ligand. The first ligand has a quinoline ring coordinated to the iridium. The second ligand has a pyrimidine ring coordinated to the iridium. At least one of the first ligand and the second ligand includes a substituted or unsubstituted aryl group as a substituent. The proportion of the first ligand is twice the proportion of the second ligand.
A novel organometallic complex is provided. An organometallic complex represented by General Formula (G1) includes iridium, a first ligand, and a second ligand. Each of the first ligand and the second ligand is a cyclometalated ligand. The first ligand has a quinoline ring coordinated to the iridium. The second ligand has a pyrimidine ring coordinated to the iridium. At least one of the first ligand and the second ligand includes a substituted or unsubstituted aryl group as a substituent. The proportion of the first ligand is twice the proportion of the second ligand.
(In General Formula (G1), R1 to R16 each independently represent any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms.)
A method for manufacturing a display device that can easily achieve higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is deposited over a first pixel electrode, a first sacrificial film is formed to cover the first EL film and a first electrode, and the first sacrificial film and the first EL film are etched, so that a first EL layer is formed over the first pixel electrode. Then, the first sacrificial film is removed to expose the first electrode. Furthermore, a common electrode is formed over the first EL layer and the first electrode. The first EL film is etched by dry etching, and the first sacrificial film is removed by wet etching.
A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer; a light-emitting element and a first conductive layer over the first insulating layer; a first layer over the first conductive layer; a second conductive layer over the first layer; a second insulating layer over the light-emitting element, the second conductive layer, and the first insulating layer; and a third conductive layer over the second insulating layer. The light-emitting element includes a fourth conductive layer, a second layer over the fourth conductive layer, a third layer over the second layer, and a fifth conductive layer over the third layer. The third conductive layer includes a region in contact with the second conductive layer through a first opening formed in the second insulating layer and a region in contact with the fifth conductive layer through a second opening formed in the second insulating layer; the second layer contains a light-emitting compound; the first conductive layer and the fourth conductive layer contain the same material; the first layer and the third layer contain the same material; and the second conductive layer and the fifth conductive layer contain the same material.
A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided. The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.
G02F 1/1345 - Conductors connecting electrodes to cell terminals
G06F 3/147 - Digital output to display device using display panels
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
G09G 5/00 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
G02F 1/1345 - Conductors connecting electrodes to cell terminals
G09G 5/00 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
75.
DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G02F 1/1345 - Conductors connecting electrodes to cell terminals
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Manufacturing equipment of a display device that is capable of successively performing steps from formation of a pixel circuit up to formation of a light-emitting element is provided. The manufacturing equipment includes a manufacturing apparatus of a light-emitting device that is capable of successively performing a film formation step, a lithography step, an etching step, and a sealing step for formation of an organic EL element and a manufacturing apparatus for formation of a pixel circuit that drives the organic EL element. Formation from the pixel circuit up to the organic EL element can be performed successively, so that a display device with a high yield and high reliability can be formed.
H10K 71/20 - Changing the shape of the active layer in the devices, e.g. patterning
H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
77.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
A high-resolution display device and a manufacturing method thereof are provided. The display device includes a first insulating layer, a first light-emitting element and a second light-emitting element over the first insulating layer, a third insulating layer located to be over and cover the first light-emitting element, and a fifth insulating layer located to be over and cover the second light-emitting element. The first light-emitting element and the second light-emitting element emit light of different colors. A first groove and a second groove are provided in a region that is in the first insulating layer and between the first light-emitting element and the second light-emitting element. Part of the third insulating layer is embedded in the first groove, and part of the fifth insulating layer is embedded in the second groove.
A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.
A highly reliable display device is provided. The display device including a light-emitting element and an insulating layer placed to cover the light-emitting element and the light-emitting element includes a first conductive layer, an EL layer over the first conductive layer, and a second conductive layer over the EL layer and the insulating layer includes a first layer, a second layer over the first layer, and a third layer over the second layer and the first layer has a function of capturing or fixing at least one of water and oxygen, the second layer has a function of inhibiting diffusion of at least one of water and oxygen, and the third layer has a higher concentration of carbon than at least one of the first layer and the second layer.
A display device with high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided. A display device that can easily achieve a higher resolution is provided. A display device with both high display quality and a high resolution is provided. A display device with high contrast is provided. The display device includes an insulating layer, a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, and an upper electrode over the first EL layer, over the second EL layer, and over the insulating layer. The first EL layer includes a first light-emitting layer, the second EL layer includes a second light-emitting layer, the first EL layer and the second EL layer are adjacent to each other, the insulating layer includes a resin or a precursor of the resin, and the insulating layer includes a region sandwiched between a first end face of the first EL layer and a second end face of the second EL layer.
A novel display device is provided. The display device includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are provided in different layers. The first layer includes a driver circuit and a functional circuit. The second layer includes a pixel circuit. The third layer includes a display element. The pixel circuit has a function of controlling light emission of the display element. The driver circuit has a function of controlling the pixel circuit. The functional circuit has a function of controlling the driver circuit. The first layer includes a first transistor with a semiconductor layer containing silicon in a channel formation region. The second layer includes a second transistor with a semiconductor layer containing a metal oxide in a channel formation region.
A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer is included between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer and are provided to face each other. The common electrode is provided along the side surface of the first EL layer, the side surface of the second EL layer, and a top surface of the insulating layer. A width of the insulating layer is greater than or equal to 2 times and less than or equal to 4 times that of a distance between the first pixel electrode and the second pixel electrode.
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device includes a plurality of first light-emitting elements and a plurality of second light-emitting elements. The first light-emitting element comprises a first pixel electrode, a first EL layer, a common layer, and a common electrode. The second light-emitting element comprises a second pixel electrode, a second EL layer, the common layer, and the common electrode. The first EL layer and the second EL layer are provided to be apart from each other, and a side surface of the first EL layer and a side surface of the second EL layer are provided to face each other. A first light-emitting unit, a first intermediate layer, and a second light-emitting unit are stacked in the first EL layer. A third light-emitting unit, a second intermediate layer, and a fourth light-emitting unit are stacked in the second EL layer. The first light-emitting unit and the second light-emitting unit each comprise a first light-emitting layer emitting light of a first color, and the third light-emitting unit and the fourth light-emitting unit each comprise a second light-emitting layer emitting light of a second color different from the first color.
To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
A display device driven at high speed is provided. The display device includes pixels, a first signal line, a second signal line, a scan line, and an insulating layer. The first signal line includes a region overlapping with the second signal line with the insulating layer therebetween. The pixels each include a first transistor and a second transistor. The first signal line functions as one of a source and a drain of the first transistor in each of pixels in one column including a first pixel. In the first pixel, the first transistor includes a first semiconductor layer. The first semiconductor layer includes a region in contact with a sidewall of a first opening in the insulating layer. The second signal line functions as one of a source and a drain of the second transistor in each of the pixels in one row including the first pixel.
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
86.
ADDITION METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
An adder circuit inhibiting overflow is provided. A first memory, a second memory, a third memory, and a fourth memory are included. A step of supplying first data with a sign to the first memory and supplying the first data with a positive sign stored in the first memory, to the second memory; a step of supplying the first data with a negative sign stored in the second memory, to the third memory; a step of generating second data by adding the first data with a positive sign stored in the second memory and the first data with a negative sign stored in the third memory; and a step of storing the second data in the fourth memory are included. When the second data stored in the fourth memory are all second data with a positive sign or all second data with a negative sign, all the second data stored in the fourth memory are added.
G06F 7/499 - Denomination or exception handling, e.g. rounding or overflow
G06F 7/501 - Half or full adders, i.e. basic adder cells for one denomination
G06F 7/57 - Arithmetic logic units [ALU], i.e. arrangements or devices for performing two or more of the operations covered by groups or for performing logical operations
G06F 9/30 - Arrangements for executing machine instructions, e.g. instruction decode
G06G 7/16 - Arrangements for performing computing operations, e.g. amplifiers specially adapted therefor for multiplication or division
Manufacturing equipment of a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed can be provided. In the manufacturing equipment of a light-emitting device, a deposition step, a lithography step, an etching step, and a sealing step by forming a protective layer for forming an organic EL element can be successively performed, whereby a downscaled organic EL element achieving high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.
H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 14/56 - Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/54 - Apparatus specially adapted for continuous coating
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A highly reliable display device is provided. The display device includes a transistor over a substrate, a first insulating layer over the transistor, a second insulating layer over the first insulating layer, a plug placed to be embedded in the first insulating layer and the second insulating layer, and a light-emitting element over the second insulating layer. The light-emitting element includes a first conductive layer, an EL layer over the first conductive layer, and a second conductive layer over the EL layer. The plug electrically connects one of a source and a drain of the transistor to the first conductive layer. The second insulating layer has higher capability of inhibiting hydrogen diffusion than the first insulating layer.
A high-resolution or high-definition display device is provided. The display device is manufactured by forming a first pixel electrode and a second pixel electrode; forming a first layer over the first pixel electrode and the second pixel electrode; forming a first sacrificial layer over the first layer; processing the first layer and the first sacrificial layer to expose at least part of the second pixel electrode; forming a second layer over the first pixel electrode and the second pixel electrode; forming a second sacrificial layer over the second layer; processing the second layer and the second sacrificial layer to expose at least part of the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; forming a third layer over the first pixel electrode and the second pixel electrode; forming a counter electrode over the third layer; and processing the third layer and the counter electrode to remove at least part of each of the third layer and the counter electrode included in a region between the first pixel electrode and the second pixel electrode in a top view.
A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.
H10K 85/60 - Organic compounds having low molecular weight
C07D 209/86 - Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected to a signal line through the first switch. The pixel electrode of the first liquid crystal element is electrically connected to a pixel electrode of the second liquid crystal element through the second switch and the first resistor. The pixel electrode of the second liquid crystal element is electrically connected to a Cs line through the third switch and the second resistor. A common electrode of the first liquid crystal element is electrically connected to a common electrode of the second liquid crystal element.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/22 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
93.
SECONDARY BATTERY, ELECTRONIC DEVICE, POWER STORAGE SYSTEM, AND VEHICLE
A secondary battery has a high capacity and little deterioration can be provided. Alternatively, a novel power storage device is provided. The secondary battery includes a positive electrode and a negative electrode. The negative electrode includes a first active material, a second active material, and a graphene compound. At least part of a surface of the first active material includes a region covered with the second active material. A surface of the second active material and at least part of the surface of the first active material each include a region covered with the graphene compound. The first active material includes graphite. The second active material includes silicon. The capacity of the positive electrode is greater than or equal to 50% and less than 100% of the capacity of the negative electrode.
A display device with high resolution is provided. The display device includes a first conductor, a first insulator over the first conductor, a second conductor provided inside an opening of the first insulator, a first light-emitting layer in contact with a top surface of the second conductor and a top surface of the first insulator, and a third conductor in contact with a top surface of the first light-emitting layer.
A high-resolution display device with reduced display unevenness is provided. In the display device, a plurality of pixels are included over a substrate; each of the plurality of pixels includes a transistor and a light-emitting element; the light-emitting element includes a first electrode, an EL layer over the first electrode, and a second electrode over the EL layer; the first electrode is electrically connected to the transistor; in the plurality of pixels, the first electrodes in adjacent pixels are separated by an insulating layer; the second electrode includes a conductive material having light-transmitting property with respect to visible light; the second electrode of each of the plurality of pixels is shared; and light is emitted from the second electrode side. A wiring is included; in a plane view with respect to the substrate, the wiring is placed in a region where the EL layer is not placed; and the second electrode is placed over and in contact with the wiring.
A secondary battery with little deterioration is provided. A highly reliable secondary battery is provided. A positive electrode active material included in the secondary battery includes a crystal of lithium cobalt oxide. The positive electrode active material includes a first region including a surface parallel to the (00l) plane of the crystal and a second region including a surface parallel to a plane intersecting with the (00l) plane. The positive electrode active material contains magnesium. The first region includes a portion with a magnesium concentration that is higher than or equal to 0.5 atomic % and lower than or equal to 10 atomic %. The second region includes a portion with a magnesium concentration that is higher than the magnesium concentration in the first region and is higher than or equal to 4 atomic % and lower than or equal to 30 atomic %. Furthermore, the second region includes a portion with a fluorine concentration that is higher than a fluorine concentration in the first region and is higher than or equal to 0.5 atomic % and lower than or equal to 10 atomic %.
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/1315 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx containing halogen atoms, e.g. LiCoOxFy
H01M 4/134 - Electrodes based on metals, Si or alloys
A semiconductor device capable of product-sum operation with low power consumption is provided. The semiconductor device includes first and second circuits; the first circuit includes a first holding portion and a first transistor, and the second circuit includes a second holding portion and a second transistor. The first and second circuits are each electrically connected to first and second input wirings and first and second wirings. The first holding portion has a function of holding a first current flowing through the first transistor, and the second holding portion has a function of holding a second current flowing through the second transistor. The first and second currents are determined in accordance with first data. When a potential corresponding to second data is input to the first and second input wirings, the first circuit outputs a current to one of the first wiring and the second wiring and the second circuit outputs a current to the other of the first wiring and the second wiring. The amount of current output from the first or second circuit to the first wiring or the second wiring is determined in accordance with the first data and the second data.
A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×1020 atoms/cm3 and lower than or equal to 1×1022 atoms/cm3. Note that fluorine is added by an ion implantation method.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/425 - Bombardment with radiation with high-energy radiation producing ion implantation
H01L 29/22 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.
H10B 12/00 - Dynamic random access memory [DRAM] devices
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G11C 5/10 - Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
G11C 11/401 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
H01L 23/528 - Layout of the interconnection structure
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
To provide a light-emitting element which uses a fluorescent material as a light-emitting substance and has higher luminous efficiency. To provide a light-emitting element which includes a mixture of a thermally activated delayed fluorescent substance and a fluorescent material. By making the emission spectrum of the thermally activated delayed fluorescent substance overlap with an absorption band on the longest wavelength side in absorption by the fluorescent material in an S1 level of the fluorescent material, energy at an S1 level of the thermally activated delayed fluorescent substance can be transferred to the S1 of the fluorescent material. Alternatively, it is also possible that the S1 of the thermally activated delayed fluorescent substance is generated from part of the energy of a T1 level of the thermally activated delayed fluorescent substance, and is transferred to the S1 of the fluorescent material.